Wide bandgap semiconductor ultraviolet detector imaging system and method based on galvanometer scanning

Abstract

The application discloses a wide-band semiconductor ultraviolet detector imaging system and method based on a galvanometer scanning, which comprises a wide-band semiconductor ultraviolet detector, a two-dimensional galvanometer module and a triggering device thereof, a scanning pixel control module, wherein the wide-band semiconductor ultraviolet detector acquires light signals of a target area; the two-dimensional galvanometer module is two galvanometers which are orthogonal in two scanning directions and scans the target area by vibration; the triggering device drives the two-dimensional galvanometer module; the scanning pixel control module limits the shape and size of a light beam received by the detector; and light emitted by the target area is received by the wide-band semiconductor ultraviolet detector through the two-dimensional galvanometer module and the scanning pixel control module. The method comprises image pixel limitation, galvanometer scanning control and deconvolution recovery imaging. Compared with a traditional detection method, the application can realize high-sensitivity imaging of a solar blind area by a single-point wide-band semiconductor ultraviolet detector, improve detection precision and determine the position of a detection target.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of solar blind ultraviolet imaging detection, and more particularly to a wide bandgap semiconductor ultraviolet detector imaging system and method based on a galvanometer scanner. BACKGROUND

[0002] Compared with traditional visible light and infrared detection, solar blind ultraviolet detection has the characteristics of small background interference, small size, high sensitivity, etc. Due to the absorption of the ozone layer, there is almost no solar blind ultraviolet light from the sun in the 200nm to 280nm band on the earth's surface. Using this band to detect targets can effectively avoid the interference of sunlight on detection, which is conducive to target detection. Therefore, an imaging solar blind ultraviolet detector can more accurately confirm the target and has a wide range of application requirements in fire scenes, corona discharge, missile early warning and other scenes. However, the current common silicon-based ultraviolet imaging device has a small response in the solar blind region and a large noise, which is difficult to meet the use requirements. Therefore, using a new material with a higher response in the solar blind region as a photosensitive device can improve the imaging quality.

[0003] With the development of semiconductor technology, wide bandgap semiconductor materials are used in ultraviolet detectors, making the ultraviolet detectors have lower cost, longer life, easier to carry, and the ability to detect solar blind ultraviolet. At present, wide bandgap semiconductor materials can only be used to make point detectors or small-scale area arrays, which cannot meet the requirements of imaging detection. To use wide bandgap semiconductor materials for imaging solar blind ultraviolet detectors, the performance of the element end needs to be improved, and the signal processing end also needs to be improved, that is, not only from the detection element, but also from the system level to consider the solution, to realize imaging based on wide bandgap semiconductor ultraviolet detectors.

[0004] A large field of view imaging type solar blind ultraviolet detection system and its implementation method are disclosed in the prior art, which includes an optical subsystem, an imaging subsystem and a comprehensive processing control subsystem. The optical subsystem is connected with the imaging subsystem through threads, and the ultraviolet radiation received by the optical subsystem can be converged on the focal plane of the imaging subsystem. The imaging subsystem is connected with the comprehensive processing control subsystem through an external cable. The optical subsystem is used to receive ultraviolet radiation in a large space range. The imaging subsystem amplifies the gain of the received ultraviolet radiation and converts it into a digital image signal to be transmitted to the comprehensive processing control subsystem. The comprehensive processing subsystem is connected with the imaging subsystem to realize the control function of gain voltage, frame frequency and other parameters, and to supply power and exchange data with the imaging subsystem to realize the functions of target image acquisition, processing and image target extraction. The image signal-to-noise ratio obtained by the detection of this scheme is low, and the detection accuracy is not high. SUMMARY

[0005] The primary object of the present application is to provide a wide-band semiconductor ultraviolet detector imaging system based on galvanometer scanning, to realize high signal-to-noise ratio solar blind ultraviolet imaging, and to improve the detection accuracy and determine the position of the detection target.

[0006] A further object of the present application is to provide a wide-band semiconductor ultraviolet detector imaging method based on galvanometer scanning.

[0007] To solve the above technical problems, the technical solution of the present application is as follows:

[0008] A wide-band semiconductor ultraviolet detector imaging system based on galvanometer scanning, comprising a wide-band semiconductor ultraviolet detector, a two-dimensional galvanometer module, a trigger device, a target area, and a scanning pixel limiting module, wherein:

[0009] The target area emits solar blind ultraviolet light, which is received by the wide-band semiconductor ultraviolet detector after passing through the two-dimensional galvanometer module;

[0010] The trigger device is connected to the two-dimensional galvanometer module, and the trigger device controls the working state of the two-dimensional galvanometer module, so that at a certain time, only the light emitted by a certain small area within the target area can be received by the wide-band semiconductor ultraviolet detector after passing through the two-dimensional galvanometer module;

[0011] The scanning pixel limiting module is used to limit the shape and size of the light beam received by the wide-band semiconductor ultraviolet detector.

[0012] Preferably, the wide-band semiconductor ultraviolet detector is an AlGaN-based solar blind ultraviolet detector.

[0013] Preferably, the two-dimensional galvanometer module includes galvanometer X and galvanometer Y, which are orthogonal in scanning direction, and reflect light beams of different small areas within the field of view at different times by vibrating, at a certain time, the light emitted by a certain small area within the target area is received by the wide-band semiconductor ultraviolet detector after being reflected by galvanometer Y and galvanometer X in turn, and the trigger device inputs an electrical signal to the two-dimensional galvanometer module 2 to drive galvanometer X and galvanometer Y to vibrate.

[0014] Preferably, the lenses of the galvanometer X and the galvanometer Y are coated with a film with high reflectivity to solar blind ultraviolet light.

[0015] Preferably, the scanning pixel limiting module comprises a front limiting module and a rear limiting module, wherein: the front limiting module is a baffle with a fixed light transmission area, the light transmission area of the front limiting module is divided into several square light transmission sub-areas, at the same time, only the light passing through one of the light transmission sub-areas can be received by the wide-band semiconductor ultraviolet detector after passing through the two-dimensional galvanometer module and the rear limiting module, and the solar blind ultraviolet light emitted by the target area reaches the galvanometer Y through the front limiting module;

[0016] The rear limiting module is two square diaphragms with adjustable size, and the light emitted by the galvanometer X reaches the wide-band semiconductor ultraviolet detector through the rear limiting module.

[0017] A wide-band semiconductor ultraviolet detector imaging method based on galvanometer scanning, the method is applied to the wide-band semiconductor ultraviolet detector imaging system based on galvanometer scanning, and the method comprises the following steps:

[0018] S1: the trigger device inputs a control signal to drive the two-dimensional galvanometer module to scan;

[0019] S2: the wide-band semiconductor ultraviolet detector acquires the solar blind ultraviolet light signal of the target area through the two-dimensional galvanometer module and the scanning pixel limiting module;

[0020] S3: the wide-band semiconductor ultraviolet detector obtains the image waveform of the target area through photoelectric conversion, and restores the original image;

[0021] S4: the original image is deconvoluted to obtain an enhanced image.

[0022] Preferably, in the step S1, the trigger device inputs different control signals to drive the galvanometer X and the galvanometer Y of the two-dimensional galvanometer module, and specifically:

[0023] The waveform X driving the galvanometer X is a staircase waveform, and there are m steps in one period;

[0024] The waveform Y driving the galvanometer Y is a staircase waveform, and there are n steps in one period, and the length of each step is equal to the length of one period of the waveform X.

[0025] Preferably, in the step S2, the target area that can be received by the wide-band semiconductor ultraviolet detector changes as follows:

[0026] The target region has m*n small regions numbered from left to right and from top to bottom. In a period, the scanning sequence is as follows: first, the small region numbered 1 at the top left corner of the target region is detected, then the small region numbered m at the end of the row is detected from left to right, then the small region numbered 1+m at the top of the next row is jumped to, and the above process is repeated until the small region numbered nm at the bottom right corner of the target region. At this time, the light intensity of the entire detection region is recorded once by the wide bandgap semiconductor ultraviolet detector, which is a scanning period of the target region. After subsequent processing, an image with a size of n rows and m columns can be obtained. By repeating the above scanning process, the light intensity changes of the detection region at different times can also be recorded, and the images of the target region at different times can also be obtained.

[0027] Preferably, the step S3 is specifically:

[0028] S3.1: According to the frequency and the number of steps of the scanning waveform in step S1, the shape and size of the image converted by the target region are determined, and the sampling rate of the wide bandgap semiconductor ultraviolet detector 1 is combined to determine the number of detection points occupied by the image and the pixel;

[0029] S3.2: The waveform in an image period is intercepted;

[0030] S3.3: The detection values of the detection points occupied by each pixel are averaged to obtain the value of the pixel;

[0031] S3.4: After normalizing the pixel values, the image is converted according to the image size to complete the restoration of the image;

[0032] S3.5: The waveform in the next period is intercepted, and the above two steps are repeated to obtain the image of the detected region at different times.

[0033] Preferably, the step S4 is specifically:

[0034] A PSF of an out-of-focus blurred image is used as the initial iterative PSF;

[0035] In each iteration, the PSF is first iterated, and then the PSF is used to iterate the image, so as to approach the real image and the real PSF, and obtain the enhanced image. The iteration formula is as follows:

[0036]

[0037]

[0038] In the formula, PSF k+1 is the PSF obtained in the k+1th iteration, PSF k is the PSF obtained in the kth iteration, f k+1is the image obtained in the k+1th iteration, f is the original image f0, k is the image obtained in the kth iteration, I is the original image f0, represents a convolution operation.

[0039] Compared with the prior art, the beneficial effects of the technical scheme of the present application are:

[0040] 1. The galvanometer imaging method adopted in the present application can realize passive solar-blind ultraviolet imaging, and is convenient for use in the fields of ultraviolet fire detection, high-voltage discharge detection, etc.

[0041] 2. The scanning pixel limiting module used in the present application is beneficial to reducing the mutual overlap of image pixels in scanning imaging.

[0042] 3. The deconvolution method used in the present application is beneficial to restoring a clear image. BRIEF DESCRIPTION OF DRAWINGS

[0043] Figure 1 is a schematic diagram of the system as a whole.

[0044] Figure 2 is a schematic diagram of two-dimensional galvanometer scanning.

[0045] Figure 3 is a schematic diagram of the pre-limiting module.

[0046] Figure 4 is a schematic diagram of the method flow.

[0047] Figure 5 is a schematic diagram of the input waveform of the two-dimensional galvanometer module.

[0048] Figure 6 is a schematic diagram of the target region scanning mode.

[0049] Figure 7 is a schematic diagram of pixel overlap in the embodiment of the present application.

[0050] In the figure, 1 is a wide-bandgap semiconductor ultraviolet detector, 2 is a two-dimensional galvanometer module, 21 is a triggering device, 3 is a target region, 4 is a scanning pixel limiting module, 41 is a pre-limiting module, and 42 is a post-limiting module. DETAILED DESCRIPTION

[0051] The drawings are only used for illustrative description and cannot be understood as a limitation on the patent;

[0052] In order to better illustrate the present embodiment, some components in the drawings may be omitted, enlarged or reduced, and do not represent the size of the actual product;

[0053] It is understood by those skilled in the art that some well-known structures and their descriptions in the drawings can be omitted.

[0054] The technical solutions of the present application are further described below in conjunction with the drawings and examples.

[0055] Example 1

[0056] This example provides an imaging system based on a wide-band semiconductor ultraviolet detector, as shown in Figure 1 which comprises a wide-band semiconductor ultraviolet detector 1, a two-dimensional galvanometer module 2, a trigger device 21, a target area 3, and a scanning pixel limiting module 4, wherein:

[0057] The target area 3 emits solar blind ultraviolet light, which is received by the wide-band semiconductor ultraviolet detector 1 after passing through the two-dimensional galvanometer module 2;

[0058] The trigger device 21 is connected to the two-dimensional galvanometer module 2, and the trigger device 21 controls the working state of the two-dimensional galvanometer module 2, so that at a certain moment, only the light emitted by a certain small area within the target area 3 can be received by the wide-band semiconductor ultraviolet detector 1 after passing through the two-dimensional galvanometer module 2;

[0059] The scanning pixel limiting module 4 is used to limit the shape and size of the light beam received by the wide-band semiconductor ultraviolet detector 1.

[0060] The scanning pixel limiting module 4 includes a front limiting module 41 and a rear limiting module 42.

[0061] Example 2

[0062] This example is based on example 1 and further discloses the following content:

[0063] The material used in the wide-band semiconductor ultraviolet detector 1 has a response band in the solar blind region, and this example uses an AlGaN-based solar blind ultraviolet detector.

[0064] As shown in Figure 2 The two-dimensional galvanometer module 2 includes galvanometer X and galvanometer Y, which are orthogonal in scanning direction. By vibrating, the light beams of different small areas within the field of view range at different times are reflected. At a certain moment, the light emitted by a certain small area within the target area 3 is received by the wide-band semiconductor ultraviolet detector 1 after being reflected by galvanometer Y and galvanometer X in turn. The trigger device 21 inputs electrical signals to the two-dimensional galvanometer module 2 to drive the vibration of galvanometer X and galvanometer Y, and inputs different electrical signals to adjust the vibration mode, frequency, and amplitude of the two galvanometer lenses in the two-dimensional galvanometer module 2.

[0065] The lenses of the galvanometer X and the galvanometer Y are coated with a film with high reflectivity to solar blind ultraviolet light.

[0066] The front limiting module 41 is a baffle with a fixed light transmission area, as shown in the figure. Figure 3 As shown in the figure, the light transmission area of the front limiting module 41 is divided into several square light transmission sub-areas, and only the light passing through one of the light transmission sub-areas at the same time can be received by the wide-band semiconductor ultraviolet detector after passing through the two-dimensional galvanometer module 2 and the rear limiting module 42. The solar blind ultraviolet light emitted by the target area 3 passes through the front limiting module to the galvanometer Y.

[0067] The rear limiting module 42 is two square diaphragms with adjustable size, and the light emitted from the galvanometer X reaches the wide-band semiconductor ultraviolet detector 1 through the rear limiting module 42.

[0068] Embodiment 3

[0069] The embodiment provides a wide-band semiconductor ultraviolet detector imaging method based on galvanometer scanning, as shown in the figure. Figure 4 The method is applied to the wide-band semiconductor ultraviolet detector imaging system based on galvanometer scanning according to any one of claims 1 to 5, and the method comprises the following steps:

[0070] S1: The trigger device 21 inputs a control signal to drive the two-dimensional galvanometer module 2 to scan;

[0071] S2: The wide-band semiconductor ultraviolet detector 1 acquires the solar blind ultraviolet light signal of the target area 3 through the two-dimensional galvanometer module 2 and the scanning pixel limiting module 4;

[0072] S3: The wide-band semiconductor ultraviolet detector 1 obtains the image waveform of the target area 3 through photoelectric conversion and restores it to an original image;

[0073] S4: The original image is subjected to a deconvolution operation to obtain an enhanced image.

[0074] In the step S1, the trigger device 21 inputs different control signals to drive the galvanometer X and the galvanometer Y of the two-dimensional galvanometer module 2, as shown in the figure. Figure 5 Specifically, the waveforms are as follows:

[0075] The waveform X driving the galvanometer X is a staircase waveform, and there are m steps in one period.

[0076] The waveform Y driving the galvanometer Y is a staircase waveform, and there are n steps in one period, and the length of each step is equal to the length of one period of the waveform X.

[0077] When the input waveforms drive the two-dimensional galvanometer, it is ensured that the galvanometer can scan a complete rectangular image area.

[0078] The target area that the wide-bandgap semiconductor ultraviolet detector 1 can receive in the step S2 changes as follows:

[0079] The target area 3 has a total of m x n small areas, numbered from left to right and from top to bottom. In a period, the scanning order is Figure 6 As shown in the figure, the specific process is as follows: first, detect the small area with the sequence number 1 at the top left corner of the target area, then detect the small area with the sequence number m at the end of the row from left to right, then jump to the small area with the sequence number 1+m at the beginning of the next row, repeat the above process until the small area with the sequence number nm at the bottom right corner of the target area. At this time, the light intensity of the entire detection area is recorded by the wide-bandgap semiconductor ultraviolet detector 1 once, which is a scanning period of the target area. After subsequent steps, an image with a size of n rows and m columns can be obtained. By repeating the above scanning process, the light intensity changes of the detection area at different times can also be recorded, and the images of the target area at different times can also be obtained.

[0080] After the area of the wide-bandgap semiconductor ultraviolet detector 1 obtaining the light signal is superimposed, the entire detectable area will be covered.

[0081] The step S3 is specifically as follows:

[0082] S3.1: According to the frequency and step number of the scanning waveform in step S1, determine the shape and size of the image converted from the target area, and combine the sampling rate of the wide-bandgap semiconductor ultraviolet detector 1 to determine the number of detection points occupied by the image and the pixels;

[0083] S3.2: Intercept the waveform in a period;

[0084] S3.3: Take the average of the detection values of the detection points occupied by each pixel as the value of the pixel;

[0085] S3.4: After normalizing the pixel values, convert them according to the image size to complete the restoration of the image;

[0086] S3.5: Intercept the waveform in the next period, and repeat the above two steps to obtain the images of the detected area at different times.

[0087] As Figure 7 As shown in the figure, the spatial position of the single pixel [i, j] located in the ith row and jth column will overlap with the surrounding pixels, so the original image f0 will have a pixel overlap condition. At this time, the deconvolution operation needs to be performed on the original image in step S4 to reduce the interference of pixel overlap and obtain an enhanced image.

[0088] Generally, a deconvolution algorithm needs a priori known point spread function (PSF) to work, in addition, an approximate PSF can also be solved by using a clear image and a degraded image to perform deconvolution. But in the system, the PSF of the galvanometer imaging cannot be directly obtained, and the actual imaging of the object cannot be obtained, therefore, in the embodiment, a blind deconvolution algorithm based on Richardson-Lucy is used, which can estimate the PSF and the original image by continuous iteration under the condition of only a degraded image.

[0089] The iteration formula of the Richardson-Lucy algorithm is as follows:

[0090]

[0091] Wherein, f k+1 is the image obtained in the k+1th iteration, f k is the image obtained in the kth iteration, I is the original image f0, and PSF is the point spread function, represents convolution operation.

[0092] The step S4 is to perform deconvolution operation on the original image to obtain an enhanced image, and the specific operation is as follows:

[0093] In the embodiment, the original image with pixel overlap is similar to the out-of-focus blurred image, therefore, when the blind deconvolution algorithm is used, the PSF of the out-of-focus blurred image is used as the initial iteration PSF;

[0094] Compared with the Richardson-Lucy deconvolution algorithm, the blind deconvolution algorithm based on Richardson-Lucy is different in that: in each iteration, the PSF is first iterated, and then the image is iterated with the PSF, the true image and the true PSF are constantly approximated, and an enhanced image is obtained, and the iteration formula is as follows:

[0095]

[0096]

[0097] In the formula, PSF k+1 is the PSF obtained in the k+1th iteration, PSF k is the PSF obtained in the kth iteration, f k+1 is the image obtained in the k+1th iteration, f k is the image obtained in the kth iteration, I is the original image f0, represents convolution operation.

[0098] The same or similar reference numerals correspond to the same or similar components;

[0099] The terms describing the positional relationship in the drawings are used only for illustrative purposes and should not be construed as limiting the present patent;

[0100] Obviously, the above-mentioned embodiments of the present application are only examples for clearly illustrating the present application, and are not intended to limit the implementation modes of the present application. Based on the above description, other different forms of changes or variations can be made by those skilled in the art. Here, it is not necessary and also impossible to enumerate all the implementation modes. Any modification, equivalent replacement and improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the claims of the present application.

Claims

1. A wide bandgap semiconductor ultraviolet detector imaging system based on galvanometer scanning, characterized in that: The invention comprises a wide bandgap semiconductor ultraviolet detector (1), a two-dimensional galvanometer module (2), a trigger device (21), a target area (3) and a scanning pixel limiting module (4), wherein: The target area (3) emits solar-blind ultraviolet light, which passes through the two-dimensional galvanometer module (2) and is received by the wide-bandgap semiconductor ultraviolet detector (1); The trigger device (21) is connected to the two-dimensional galvanometer module (2), and the trigger device (21) controls the working state of the two-dimensional galvanometer module (2) so that at a certain moment, only light emitted from a certain small area within the target area (3) can be received by the wide bandgap semiconductor ultraviolet detector (1) after passing through the two-dimensional galvanometer module (2); The scanning pixel limiting module (4) is used to limit the shape and size of the light beam received by the wide bandgap semiconductor ultraviolet detector (1); The two-dimensional galvanometer module (2) includes a galvanometer X and a galvanometer Y with orthogonal scanning directions. Light emitted from a certain small area within the target area (3) is reflected by the galvanometer Y and the galvanometer X in turn and is received by the wide-bandgap semiconductor ultraviolet detector (1). The scanning pixel limiting module (4) comprises a front limiting module (41) and a rear limiting module (42), wherein: The front limiting module (41) is a baffle with a fixed light-transmitting area. The light-transmitting area of ​​the front limiting module (41) is divided into a plurality of square light-transmitting small areas. At the same time, only light passing through one of the light-transmitting small areas can be received by the wide-bandgap semiconductor ultraviolet detector after passing through the two-dimensional galvanometer module (2) and the rear limiting module (42). The solar-blind ultraviolet light emitted by the target area (3) passes through the front limiting module and reaches the galvanometer Y. The rear limiting modules (42) are two square apertures of adjustable size, and the light reflected from the galvanometer X reaches the wide bandgap semiconductor ultraviolet detector (1) through the rear limiting modules (42).

2. The wide bandgap semiconductor ultraviolet detector imaging system based on galvanometer scanning according to claim 1, characterized in that: The wide bandgap semiconductor ultraviolet detector (1) is an AlGaN-based solar-blind ultraviolet detector.

3. The wide bandgap semiconductor ultraviolet detector imaging system based on galvanometer scanning according to claim 1, characterized in that: The two-dimensional galvanometer module (2) comprises a galvanometer X and a galvanometer Y with orthogonal scanning directions, and reflects light beams from different small areas within the field of view at different times through vibration. At a certain moment, light emitted from a certain small area within the target area (3) is reflected by the galvanometer Y and the galvanometer X in turn and received by the wide-bandgap semiconductor ultraviolet detector (1). The trigger device (21) inputs an electrical signal to the two-dimensional galvanometer module (2) to drive the galvanometer X and the galvanometer Y to vibrate.

4. The wide bandgap semiconductor ultraviolet detector imaging system based on galvanometer scanning according to claim 3, characterized in that: The lenses of the galvanometer X and the galvanometer Y are coated with a film having a high reflectivity to solar-blinding ultraviolet rays.

5. A wide bandgap semiconductor ultraviolet detector imaging method based on galvanometer scanning, characterized in that: The method is applied to the wide bandgap semiconductor ultraviolet detector imaging system based on galvanometer scanning according to any one of claims 1 to 4, and the method comprises the following steps: S1: The trigger device (21) inputs a control signal to drive the two-dimensional galvanometer module (2) to perform scanning; S2: The wide bandgap semiconductor ultraviolet detector (1) acquires a solar-blind ultraviolet light signal of a target area (3) through the two-dimensional galvanometer module (2) and the scanning pixel limiting module (4); S3: obtaining an image waveform of the target area (3) through photoelectric conversion by the wide bandgap semiconductor ultraviolet detector (1), and restoring the waveform to the original image; S4: Perform deconvolution operation on the original image to obtain an enhanced image.

6. The wide bandgap semiconductor ultraviolet detector imaging method based on galvanometer scanning according to claim 5, characterized in that: In step S1, the trigger device (21) inputs different control signals to drive the galvanometer X and the galvanometer Y of the two-dimensional galvanometer module (2), specifically: The waveform X driving the galvanometer X is a step waveform with m steps in one cycle; The waveform Y driving the galvanometer Y is a step waveform, with n steps in one cycle, and the length of each step is equal to the length of one cycle of the waveform X.

7. The wide bandgap semiconductor ultraviolet detector imaging method based on galvanometer scanning according to claim 6, characterized in that: In step S2, the changes in the target area that can be received by the wide bandgap semiconductor ultraviolet detector (1) are as follows: The target area (3) has a total of m×n small areas, which are numbered from left to right and from top to bottom. In one cycle, the scanning order is: first detect the small area with a serial number of 1 in the upper left corner of the target area, then detect from left to right to the small area with a serial number of m at the end of the row, then jump to the small area with a serial number of 1+m at the beginning of the next row, and repeat the above process until the small area with a serial number of nm in the lower right corner of the target area. At this time, the light intensity of the entire detection area is recorded once by the wide bandgap semiconductor ultraviolet detector (1), which is a scanning cycle of the target area. After subsequent processing, an image with a size of n rows and m columns can be obtained. By repeating the above scanning process, the light intensity changes of the detection area at different times will also be recorded, and images of the target area at different times can be obtained.

8. The wide bandgap semiconductor ultraviolet detector imaging method based on galvanometer scanning according to claim 7, characterized in that: The step S3 is specifically as follows: S3.1: Determine the shape and size of the image converted from the target area based on the frequency and number of steps of the scanning waveform in step S1, and determine the number of detection points occupied by the image and pixels in combination with the sampling rate of the wide bandgap semiconductor ultraviolet detector 1; S3.2: Capture the waveform within one image period; S3.3: average the detection values ​​of the detection points occupied by each pixel as the value of the pixel; S3.4: After normalizing the pixel values, convert the image according to the image size to complete the image restoration; S3.5: Intercept the waveform in the next cycle and repeat the above two steps to obtain images of the detected area at different times.

9. The wide bandgap semiconductor ultraviolet detector imaging method based on galvanometer scanning according to claim 8, characterized in that: In step S4, the original image is deconvolved to obtain an enhanced image, specifically: Use the PSF of an out-of-focus blurred image as the PSF for the initial iteration; In each iteration, the PSF is first iterated, and then the image is iterated with the PSF, continuously approaching the true image and the true PSF to obtain the enhanced image. The iterative formula is as follows: Where, PSF k+1 is the PSF obtained in the k+1th round of iteration, PSF k is the PSF obtained in the kth iteration, f k+1 is the image obtained in the k+1th round of iteration, f k is the image obtained by the kth iteration, I is the original image f0, Represents the convolution operation.

Images