Machine and method for machining a structure

Abstract

This invention relates to a machine tool and method for processing structures. The machine tool for processing the structure includes: an electron beam microscope, an ion beam microscope, an ion beam mask, a processor, and a controller. The electron beam microscope irradiates a workpiece with an electron beam to obtain an electron beam image of the workpiece, while the ion beam microscope irradiates the workpiece with an ion beam to obtain an ion beam image of the workpiece, and processes the workpiece. The processor can identify the electron beam image and the ion beam image, calculate the position information of the workpiece, and the controller then controls the relative positions of the ion beam microscope, the ion beam mask, and the workpiece according to the position information.

Description

Technical Field

[0001] This disclosure relates to apparatus and methods for processing structures, and more particularly to apparatus and methods for processing samples for manufacturing three-dimensional atomic probes. Background Technology

[0002] Three-dimensional atom probe (3D-AP or APT: Atom Probe Tomography) is considered the only technology capable of simultaneously providing 3D images at atomic-level resolution and chemical composition.

[0003] The quality of the three-dimensional atomic probe tip determines the quality of experimental data. Generally, the three-dimensional atomic probe tip sample must meet the following requirements: (1) the tip radius is at the nanometer level; (2) the tip shape must be symmetrical to avoid forming an ellipse; (3) the tip shape angle cannot be too large; (4) the column body must avoid the appearance of microcracks; and (5) no other tips or micro-tips should appear within a certain distance near the tip. In recent years, the extensive application of three-dimensional atomic probes is closely related to the sample fabrication technology, among which the most important is the application of focused ion beam (FIB). Summary of the Invention

[0004] In some embodiments, this disclosure provides a machine tool for processing structures, comprising: an electron beam microscope, an ion beam microscope, an ion beam mask, a processor, and a controller. The electron beam microscope irradiates a workpiece with an electron beam to obtain an electron beam image of the workpiece, while the ion beam microscope irradiates the workpiece with an ion beam to obtain an ion beam image of the workpiece, and can process the workpiece. The ion beam mask is disposed between the ion beam microscope and the workpiece, and can be used to block part of the ion beam. The processor includes an image recognition module and a calculation module. The image recognition module can be used to recognize the electron beam image and the ion beam image, and the calculation module can be used to process the electron beam image to obtain the position information of the workpiece. The controller can adjust the relative positional relationship between the ion beam microscope, the ion beam mask, and the workpiece according to the position information.

[0005] In some embodiments, this disclosure provides a method for processing a structure, comprising: irradiating a workpiece with an electron beam to obtain an electron beam image of the workpiece; using a processor to identify the electron beam image to obtain position information of the workpiece through the electron beam image; and using a controller to adjust the relative positional relationship between an ion beam, an ion beam mask, and the workpiece according to the position information, and processing the workpiece using the ion beam.

[0006] In some embodiments, this disclosure provides a machine tool for processing structures, comprising: an electron beam microscope, an ion beam microscope, a processor, and a controller. The electron beam microscope irradiates a workpiece with an electron beam, while the ion beam microscope irradiates the workpiece with an ion beam. The processor is arranged to perform the following operations: acquiring an electron beam image from the electron beam microscope and / or acquiring an ion beam image from the ion beam microscope, identifying the electron beam image and / or the ion beam image, and performing calculations based on the images to obtain position information of the workpiece. Furthermore, the controller controls and adjusts the relative positional relationship between the ion beam microscope, the ion beam mask, and the workpiece based on the position information.

[0007] The foregoing has provided a fairly broad overview of the technical features of this disclosure, enabling a better understanding of the detailed description that follows. Other technical features constituting the subject matter of the claims will be described below. Those skilled in the art to which this disclosure pertains will understand that the concepts and specific embodiments disclosed below can be readily utilized to modify or design other structures or processes to achieve the same purpose as this disclosure. Those skilled in the art will also understand that such equivalent constructions cannot depart from the spirit and scope of this disclosure as defined by the appended claims. Attached Figure Description

[0008] The aspects of this disclosure will become clearer from the following detailed description, together with the accompanying drawings. It should be noted that, in accordance with industry standard practice, the various features are not drawn to scale. In fact, for clarity, the dimensions of the various features may be arbitrarily enlarged or reduced.

[0009] Figure 1 This is a schematic diagram of the structure of a machine tool according to an embodiment of this disclosure.

[0010] Figure 2 For use such Figure 1 A flowchart of a method for preparing semiconductor samples using a machine.

[0011] Figure 3 For use such Figure 1 The image of the ion beam obtained from the machine.

[0012] Figure 4 For use such Figure 1 The electron beam image obtained from the machine.

[0013] Figure 5 This is a schematic diagram illustrating the operation of the controller according to an embodiment of this disclosure.

[0014] Figure 6 For use such Figure 1 A schematic diagram of the etching process performed on the machine. Detailed Implementation

[0015] The following disclosure provides numerous different embodiments or instances for implementing various features of the provided subject matter. Specific examples of elements and arrangements will be described below to simplify this disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, "forming a first member above or on a second member" may include embodiments in which the first and second members form direct contact, and may also include embodiments in which additional members may be formed between the first and second members such that the first and second members do not form direct contact. Furthermore, element symbols and / or letters may be repeated in various instances in this disclosure. This repetition is intended for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0016] Furthermore, for ease of description, spatial relative terms (such as "below," "under," "down," "above," "upper," "above," and the like) may be used herein to describe the relationship between one element or component and another element or component(s), as illustrated in the figures. In addition to the orientations depicted in the figures, spatial relative terms are also intended to cover different orientations of the machine tool during use or operation. The machine tool may be oriented in other ways (rotated 90 degrees or otherwise), and the spatial relative descriptive terms used herein may be interpreted accordingly.

[0017] As used herein, terms such as “first,” “second,” and “third” describe various elements, components, regions, layers, and / or sections, which should not be limited to these terms. These terms may be used only to distinguish elements, components, regions, layers, or sections from one another. Unless clearly indicated herein, terms such as “first,” “second,” and “third” as used herein do not imply a sequence or order.

[0018] As used herein, the terms “approximately,” “substantially,” “basically,” and “about” are used to describe and explain small variations. When used in conjunction with an event or condition, the terms may refer to examples in which the event or condition occurs precisely and examples in which the event or condition occurs very approximately. For example, when used in conjunction with a numerical value, the terms may refer to a range of variation less than or equal to ±10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, if the difference between two numerical values ​​is less than or equal to ±10% of the average of the values ​​(e.g., less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%), then the values ​​may be considered “substantially” the same or equal. For example, "substantially" parallel can refer to an angular variation of less than or equal to ±10° relative to 0°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°. Similarly, "substantially" perpendicular can refer to an angular variation of less than or equal to ±10° relative to 90°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.

[0019] Atom probe tomography (APT) is the only material analysis technique capable of three-dimensional mapping and chemical composition measurement at the atomic scale (depth resolution approximately 0.1-0.3 nm, lateral resolution 0.3-0.5 nm), and is currently widely used in the semiconductor industry. Current technology often utilizes focused ion beams (FIBs) to prepare samples for APTs. FIB instruments use a well-focused ion beam to process samples and acquire images. FIB primarily obtains highly accurate sample cross-sections or performs circuit modifications after imaging with electron beams such as SEM (Scanning Electron Microscopy), STEM (Scanning Transmission Electron Microscopy), and TEM (Transmission Electron Microscopy). Furthermore, FIB itself can also detect ion beam images. The contrast mechanism of FIB differs from that of SEM and S / TEM, thus allowing for the acquisition of unique structural information in certain situations. Dual beam combines FIB and SEM techniques into one tool, using FIB to prepare samples and using SEM, TEM or STEM instruments to obtain electronic images, while single beam FIB uses only one ion beam source.

[0020] Figure 1 This is a schematic diagram of the configuration of a machine tool 1 for fabricating structures according to an embodiment of the present disclosure. In some embodiments, machine tool 1 relates to a dual-beam focused ion beam microscope (DB-FIB). "Dual-beam" means that the machine tool includes an "ion beam" and an "electron beam." The electron beam is a scanning electron microscope, while the ion beam utilizes an electric field to accelerate and focus high-energy (high-speed) Ga+ ions through electrostatic lenses to fabricate specific patterns via physical collisions. The dual-beam focused ion beam microscope can use the electron beam to locate target areas and observe images, while the ion beam precisely cuts the target area without damaging other sample structures. Therefore, it can perform nanoscale precise positioning and cutting, and fabricate nanoscale TEM sample slices. In particular, atomic probes require samples to be needle-shaped with a tip size, for example, approximately 10-100 nm, which are typically processed using ion beams to ultimately produce needle-like samples with a size of less than approximately 100 nm.

[0021] In some embodiments, the apparatus 1 includes an ion beam tube 10, an electron beam tube 20, and an ion beam mask 15. When a workpiece 5 to be fabricated into a sample is placed in the apparatus 1, the ion beam tube 10 is generally positioned on top of the workpiece 5, the electron beam tube is generally positioned on the side of the workpiece 5, and the ion beam mask 15 is generally positioned between the ion beam tube 10 and the workpiece 5. The ion beam tube 10 can irradiate the workpiece 5 with an ion beam 11 to obtain an ion beam image of the workpiece 5, which generally presents a top view of the workpiece 5 (see figure). Figure 3 Furthermore, the ion beam tube 10 can also irradiate the workpiece 5 with the ion beam 11 to process the workpiece 5, such as etching or depositing. When the ion beam tube 10 irradiates the workpiece 5 with the ion beam 11 to process the workpiece 5, an ion beam mask 15 can be provided between the ion beam tube 10 and the workpiece 5. In this way, the ion beam 11 is emitted from the ion beam tube 10, passes through the ion beam mask 15, and then irradiates the workpiece 5. The ion beam mask 15 can block part of the ion beam 11, so that some parts of the workpiece 5 will not be irradiated by the ion beam 11. Using the ion beam mask 15, certain parts of the workpiece 5 can be selectively irradiated. For example, if a certain part of the workpiece 5 does not need to be irradiated by the ion beam 11 during ion beam irradiation processing, the user can use the ion beam mask 15 to block the ion beam 11 that will irradiate the part of the workpiece 5. Furthermore, the electron beam tube 20 can irradiate the workpiece 5 with an electron beam 21 to obtain an electron beam image of the workpiece 5, which is a side cross-sectional view of the workpiece 5 (see reference). Figure 4 In some embodiments, the machine tool 1 can observe the workpiece in situ using the ion beam tube 10 and / or the electron beam tube 20, and process the workpiece 5 using the ion beam tube 10.

[0022] However, in some cases, when the workpiece 5 is placed in the machine tool 1, the ion beam mask 15 may not be aligned with the workpiece 5. If the ion beam tube 10 is used to irradiate the workpiece 5 with the ion beam 11 for processing when the ion beam mask 15 and the workpiece 5 are not aligned with each other, the ion beam 11 cannot accurately irradiate the part of the workpiece 5 to be processed. Thus, the workpiece 5 cannot be made into a sample that can be analyzed by atomic probe technology. In particular, the ion beam 11 may irradiate and damage the target object in the workpiece 5.

[0023] When the ion beam mask 15 is not aligned with the workpiece 5, they can be manually aligned. The user estimates the deviation distance between the ion beam mask 15 and the workpiece 5 by manually observing the electron beam image, and then manually changes the relative position between the ion beam mask 15 and the workpiece 5 to align them. However, manually calibrating the ion beam mask 15 and the workpiece 5 is not only time-consuming, but also difficult to achieve good alignment.

[0024] In some embodiments, this disclosure provides an automated processing machine and method. The machine 1 further includes a processor 30 and a controller 40. The processor 30 is electrically connected to the ion beam tube 10 and the electron beam tube 20, while the controller 40 is electrically connected to the processor 30 and the ion beam mask 15. In some embodiments, the processor 30 has an image recognition module 31 and a calculation module 33. When the ion beam tube 10 irradiates the workpiece 5 with an ion beam 11 to obtain an ion beam image of the workpiece 5, and the electron beam tube 20 irradiates the workpiece 5 with an electron beam 21 to obtain an electron beam image of the workpiece 5, the processor 30 can simultaneously receive the ion beam image and the electron beam image. Furthermore, the image recognition module 31 of the processor 30 can process the ion beam image and the electron beam image. In some embodiments, the image recognition module 31 can further adjust the grayscale value of the ion beam image so that the workpiece 5 can be more clearly presented in the ion beam image.

[0025] The calculation module 33 can monitor the electron beam image in situ and further calculate the deviation distance between the current position of the workpiece 5 and the ion beam mask 15 and their alignment using other parameters and the monitored values. In other words, the calculation module 33 can obtain the position information of the workpiece 5 by monitoring and calculating the electron beam image, and from this position information, it can understand how to perform the alignment correction work between the ion beam mask 15 and the workpiece 5. As described above, the ion beam 11 emitted from the ion beam tube 10 passes through the ion beam mask 15 and irradiates the workpiece 5 to perform etching or deposition processing. If the workpiece 5 is not aligned with the ion beam mask 15, the ion beam 11 may irradiate parts of the workpiece 5 that should not be irradiated, which may damage the target object in the workpiece 5. Therefore, the calculation module 33 disclosed herein can identify and calculate the actual deviation distance between the workpiece 5 and the ion beam mask 15 from the electron beam image, thus providing information for correcting the positional relationship between the workpiece 5 and the ion beam mask 15.

[0026] Furthermore, the calculation module 33 can identify operating modes by training the machine with samples. For example, it can learn complex functions (or samples) from electron beam image data to create an algorithm (or a set of rules) and use it to obtain the actual deviation distance between the workpiece 5 and the ion beam mask 15.

[0027] In addition, in some embodiments, the processor 30 may have a storage database that stores data on the processed samples, which can provide a reference for the user when processing the samples using the ion beam 11.

[0028] The controller 40 can obtain the position information of the workpiece 5 from the calculation module 33 of the processor 30. Specifically, the controller 40 can obtain the actual deviation distance between the workpiece 5 and the ion beam mask 15 from the calculation module 33 of the processor 30, and further adjust the relative positional relationship between the ion beam mask 15 and the workpiece 5 based on the positional information of the workpiece 5 to correct the ion beam mask 15 and the workpiece 5, so that the ion beam mask 15 and the workpiece 5 can be aligned with each other. After the positional relationship between the ion beam mask 15 and the workpiece 5 is corrected, the ion beam 11 can accurately irradiate the part of the workpiece 5 to be irradiated when the ion beam tube 10 performs etching or deposition processing on the workpiece 5. Through irradiation processing of the workpiece 5 by the ion beam 11, the target object in the workpiece 5 can be processed to a testable state, making the processed workpiece 5 a sample suitable for three-dimensional atomic probe analysis.

[0029] Figure 2 For use Figure 1 The flowchart shows a method 6 for preparing a semiconductor sample using machine 1. In operation step 61 of the method flowchart, the workpiece 5 containing the target object to be tested is placed in machine 1.

[0030] In operation step 62 of the method flowchart, the workpiece 5 is irradiated with an ion beam 11 using an ion beam tube 10 to obtain an ion beam image, which can roughly show the top view of the workpiece 5; the workpiece 5 is irradiated with an electron beam 21 using an electron beam tube 20 to obtain an electron beam image, which can roughly show the side cross-sectional view of the workpiece 5. Since the cross-section of the workpiece 5 can be presented in the electron beam image, the target object to be tested contained in the workpiece 5 can also be seen in the electron beam image.

[0031] In operation step 63 of the method flowchart, the ion beam image of the workpiece 5 obtained from the ion beam tube 10 and the electron beam image of the workpiece 5 obtained from the electron beam tube 20 can be transmitted from the ion beam tube 10 and the electron beam tube 20 to the processor 30.

[0032] In operation step 64 of the method flowchart, after the processor 30 obtains an ion beam image of the workpiece 5 from the ion beam tube 10, the image recognition module 31 of the processor 30 can further process and recognize the ion beam image so that the ion beam image can clearly present the top view image of the workpiece 5 obtained therefrom. As previously mentioned, the ion beam image can roughly show the top view of the workpiece 5. Further reference Figure 3 The ion beam image received directly from the ion beam tube 10 cannot clearly present the top view of the workpiece 5 (see reference). Figure 3(A)); while the image recognition module 31 of the processor 30 can further process the ion beam image, such as adjusting the grayscale value of the ion beam image to enhance the contrast between the workpiece 5 and the surrounding environment in the ion beam image. The processed ion beam image can make the top view of the workpiece 5 clearly presented (see (A)). Figure 3 (B)

[0033] In operation step 65 of the method flowchart, the calculation module 33 of the processor 30 calculates the position information of the workpiece 5 using the electron beam image. Further reference... Figure 4 As described above, the electron beam image can display a side cross-sectional view of the workpiece 5, and the target object 51 contained in the workpiece 5 is visible in the electron beam image. In some embodiments, such as Figure 4 As shown, the calculation module 33 can provide a scale bar 331 for the electron beam image. The scale bar 331 can be used to measure the scale by which the target object 51 in the workpiece 5 deviates from the center line L of the ion beam mask 15 (if the target object 51 in the workpiece 5 can be aligned with the center line L of the ion beam mask 15, it means that the workpiece 5 and the ion beam mask 15 are accurately positioned). The calculation module 33 further uses the pixel information of the electron beam as a parameter, and uses an algorithm to calculate the distance z by which the measured scale information and the electron beam pixel information actually deviate from the center line L of the ion beam mask 15, thus obtaining information on the relative position of the ion beam mask 15 and the workpiece 5. In some embodiments, the calculation module 33 has a simulator and a compiler that can convert the electron beam pixel information to the scale measured using the scale bar, so that the calculation module 33 can automatically obtain information on the relative position of the ion beam mask 15 and the workpiece 5.

[0034] In addition, such as Figure 4 As shown, the electron beam image can display the side cross-sectional view of the workpiece 5, and the aspect ratio of the precursor capping of the workpiece 5 can also be observed from the electron beam image. When the aspect ratio of the precursor capping of the workpiece 5 is kept at a value greater than 2, the curtaining effect can be reduced when processing the workpiece 5, and the pass rate of the manufactured samples can be increased.

[0035] In operation step 66 of the method flowchart, after the processor 30 learns the actual deviation distance z of the target object 51, the controller 40 can further control and adjust the relative position of the ion beam mask 15 and the workpiece 5 based on the offset distance information, so as to correct the ion beam mask 15 and the workpiece 5 to achieve an accurate processing position. Further reference Figure 5 The ion beam image is used to illustrate how the controller 40 controls and adjusts the positional relationship between the workpiece 5 and the ion beam mask 15. Figure 5 The element symbol 15 in the image represents a virtual image of the ion beam mask. (See reference...) Figure 5 In (A), the deviation distance between the ion beam mask 15 and the workpiece 5 is z. The controller 40 can further adjust the relative positions of the ion beam mask 15 and the workpiece 5 based on the deviation distance z between the target object 51 of the workpiece 5 and the centerline L of the ion beam mask 15 obtained by the calculation module 33, in order to eliminate the offset distance z. In some embodiments, the controller 40 can move the ion beam mask 15 according to the information to correct the relative positions of the ion beam mask 15 and the workpiece 5, so that the workpiece 5 can be located in a position that can be accurately processed (as shown in (B)).

[0036] In operation step 67 of the method flowchart, after the controller 40 corrects the positional relationship between the ion beam mask 15 and the workpiece 5, the ion beam barrel 10 can irradiate the workpiece 5 with the ion beam 11 to perform etching or deposition processing. Further reference Figure 6 After the positional relationship between the ion beam mask 15 and the target object 51 of the workpiece 5 is adjusted and corrected by the controller 40, the ion beam tube 10 can then irradiate the workpiece 5 with the ion beam 11 for processing. (See reference...) Figure 6 Ion beam 11 is emitted from ion beam tube 10 and irradiates workpiece 5 through ion beam mask 15. Ion beam mask 15 can block ion beam 11 from irradiating the target object 51, so that ion beam 11 only irradiates other parts of the target object 51 on workpiece 5. In this way, ion beam 11 can only remove the other parts without irradiating the target object 51 and without damaging the target object 51. In this way, the target object 51 can be exposed to a state that is ready for testing. Finally, workpiece 5 can be processed into a sample that can be used for three-dimensional atomic probe analysis, and the processed workpiece 5 can continue to be analyzed by three-dimensional atomic probe analysis.

[0037] Furthermore, as previously mentioned, the aspect ratio of the precursor material layer of workpiece 5 can be observed through electron beam images. Only when the aspect ratio of the precursor material layer of workpiece 5 is maintained at a value greater than approximately 2 can the curtain effect be reduced during the processing of workpiece 5, thereby increasing the yield rate of the manufactured samples. Therefore, when processing workpiece 5 using ion beam 11, the irradiation processing of ion beam 11 can be adjusted according to the electron beam image to maintain the aspect ratio of the precursor material layer of workpiece 5 at a value greater than approximately 2. In some embodiments, processor 30 can automatically adjust the irradiation processing of ion beam 11.

[0038] Using the machine tool 1 disclosed herein, atomic probe samples can be processed automatically and in real time on the workpiece 5 containing the workpiece sample 51 to be tested. The processor 30 and controller 40 of the machine tool 1 can confirm the relative position between the workpiece 5 and the ion beam mask 15 in real time, and simultaneously correct the relative position between the two and automatically process the workpiece 5 with the ion beam 11. This can save the time of making atomic probe samples and improve the yield rate of atomic probe samples.

[0039] The features of several embodiments have been summarized above to enable those skilled in the art to better understand aspects of this disclosure. Those skilled in the art will understand that this disclosure can be readily used as a basis for designing or modifying other processes and structures to achieve the same purpose and / or attain the same advantages of the embodiments introduced herein. Those skilled in the art should also recognize that these equivalent constructions should not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and modifications can be made to this document.

[0040] Symbol Explanation

[0041] 1 machine

[0042] 10 Ion Beam Lens

[0043] 11 Ion Beam

[0044] 15 Ion Beam Mask

[0045] 20 Electron Beam Lens

[0046] 21 electron beam

[0047] 30 processors

[0048] 31 Image Recognition Module

[0049] 33 Calculation Module

[0050] 331 scale

[0051] 40 Controller

[0052] 5 workpieces

[0053] 51 Target Object to be Tested

[0054] 61 Methods

[0055] 62 methods

[0056] 63 Methods

[0057] 64 methods

[0058] 65 methods

[0059] 66 methods

[0060] 67. Methods.

Claims

1. A machine tool for processing a structure, comprising: An electron beam tube is arranged to irradiate the workpiece with an electron beam from the side of the workpiece to obtain a cross-sectional electron beam image of the workpiece. An ion beam microscope tube is arranged to irradiate the workpiece with an ion beam to obtain an ion beam image of the workpiece and to process the workpiece. An ion beam mask is disposed between the ion beam tube and the workpiece to block part of the ion beam for selective processing of the workpiece. A processor, connected to the electron beam mirror and the ion beam mirror, wherein the processor includes: An image recognition module is used to recognize the electron beam image and the ion beam image; and A calculation module is used to process the cross-sectional electron beam image to compare the measurement information of the electron beam image with the pixel information of the electron beam image, thereby obtaining positional information having the deviation distance between the workpiece and the ion beam mask; and A controller, connected to the processor, adjusts the relative positional relationship between the ion beam tube, the ion beam mask, and the workpiece based on the position information, so as to correct the relative alignment of the ion beam mask and the workpiece.

2. The apparatus of claim 1, wherein the image recognition module is arranged to further process the ion beam image.

3. The apparatus according to claim 2, wherein the image recognition module is arranged to adjust the grayscale value of the ion beam image.

4. The machine tool according to claim 1, wherein the computing module is arranged to identify the operating mode through sample training machine to obtain the position information of the workpiece based on the electron beam image.

5. The machine tool according to claim 1, wherein the processor is further configured to observe the aspect ratio of the precursor material layer of the workpiece from the electron beam image, and the controller is configured to adjust the irradiation processing of the ion beam according to the aspect ratio to maintain the aspect ratio of the precursor material layer of the workpiece greater than a predetermined value.

6. The machine tool according to claim 1, wherein the electron beam tube is arranged corresponding to the side of the workpiece, and the ion beam tube is arranged corresponding to the top of the workpiece.

7. A method for processing a structure, comprising: An electron beam is irradiated onto the workpiece from its side to obtain a cross-sectional electron beam image of the workpiece. The processor identifies the electron beam image and processes the cross-sectional electron beam image to compare the measurement information and pixel information of the electron beam image, thereby obtaining positional information including the deviation distance between the workpiece and the ion beam mask. and The controller adjusts the relative positional relationship between the ion beam, the ion beam mask, and the workpiece based on the position information to correct the relative alignment between the ion beam mask and the workpiece, and selectively processes the workpiece by passing the ion beam through the ion beam mask.

8. The method of claim 7, further comprising: The aspect ratio of the precursor material layer of the workpiece is observed from the electron beam image; And adjust the irradiation process of the ion beam according to the aspect ratio to maintain the aspect ratio of the precursor material layer of the workpiece greater than a predetermined value.

9. The method of claim 7, wherein processing the workpiece using the ion beam includes etching the workpiece by irradiating it with the ion beam.

10. A machine tool for machining a structure, comprising: An electron beam tube is arranged to irradiate the workpiece with an electron beam from the side of the workpiece to obtain a cross-sectional electron beam image of the workpiece. An ion beam tube, which is arranged to irradiate the workpiece with an ion beam; An ion beam mask is disposed between the ion beam tube and the workpiece to block part of the ion beam for selective processing of the workpiece. A processor, which is arranged to perform the following operations: Obtain an electron beam image from the electron beam tube and / or obtain an ion beam image from the ion beam tube; Identify the electron beam image and / or the ion beam image; and The position information of the workpiece is obtained by calculation based on the electron beam image and / or the ion beam image; wherein the calculation includes processing the cross-sectional electron beam image to compare the measurement information of the electron beam image and the pixel information of the electron beam image, thereby obtaining the position information including the deviation distance between the workpiece and the ion beam mask; and The controller adjusts the relative positions of the ion beam tube, the ion beam mask, and the workpiece based on the position information to correct the relative alignment between the ion beam mask and the workpiece.

Images