Substrate processing equipment

Abstract

The present invention provides a substrate processing apparatus that can simultaneously position a rotating arm's rotating mechanism toward the center of a vacuum processing vessel and simplify an exhaust path. The substrate processing apparatus comprises a vacuum processing vessel and a rotating arm with a rotating axis located in the center of the vacuum processing vessel. A hollow rotating cylinder within the rotating arm forms the rotating axis, and the hollow portion of the rotating cylinder forms the exhaust path of the vacuum processing vessel.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus. Background Art

[0002] In a reduced-pressure drying apparatus, a proposal has been made to attach reinforcing ribs extending in a direction intersecting adjacent edges of a quadrilateral chamber cover, thereby suppressing deformation of the chamber cover during reduced pressure and preventing delamination of welded portions (Patent Document 1). Furthermore, a substrate processing apparatus for processing substrates (hereinafter also referred to as wafers) within a substrate processing system is known that processes four wafers simultaneously in a single chamber (Patent Document 2).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2009-41790

[0006] Patent Document 2: Japanese Patent Application Publication No. 2019-220509 Summary of the Invention

[0007] Problems to be solved by the invention

[0008] The present disclosure provides a substrate processing apparatus capable of achieving both installation of a rotating mechanism of a rotating arm at the center of a vacuum processing chamber and simplification of an exhaust path.

[0009] Solutions for solving problems

[0010] A substrate processing device of a technical solution disclosed in the present invention includes a vacuum processing container and a rotating arm with a rotating axis located in the center of the vacuum processing container. In the rotating arm, a hollow rotating cylinder inside constitutes the rotating axis, and the hollow part of the rotating cylinder constitutes the exhaust path of the vacuum processing container.

[0011] Effects of the Invention

[0012] According to the present disclosure, it is possible to achieve both installation of the rotating mechanism of the rotating arm in the center of the vacuum processing chamber and simplification of the exhaust path. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is an exploded perspective view showing an example of the structure of a substrate processing apparatus in one embodiment of the present disclosure.

[0014] Figure 2 This is a diagram showing an example of the positional relationship between the processing space and the rotary arm at the standby position.

[0015] Figure 3FIG. 1 is a diagram showing an example of the positional relationship between the processing space and the rotary arm at the wafer holding position.

[0016] Figure 4 FIG. 1 is a diagram showing an example of a movement path of a wafer in the substrate processing apparatus according to the present embodiment.

[0017] Figure 5 FIG. 1 is a diagram showing an example of an exhaust path of the substrate processing apparatus according to the present embodiment.

[0018] Figure 6 It is a schematic cross-sectional view showing an example of the structure of the substrate processing apparatus according to the present embodiment.

[0019] Figure 7 This is an exploded perspective view showing an example of the structure of a substrate processing apparatus according to Modification 1.

[0020] Figure 8 This is a partially enlarged view showing an example of a cross section near the merging exhaust port of Modification 2. DETAILED DESCRIPTION

[0021] Hereinafter, embodiments of the disclosed substrate processing apparatus will be described in detail based on the accompanying drawings. However, the disclosed technology is not limited to the following embodiments.

[0022] In the above-mentioned substrate processing device in the form of processing four wafers simultaneously in one chamber, a converging exhaust passage for merging the exhaust passages from the processing spaces of each wafer is provided in the central portion (central area) of the substrate processing device. In contrast, if a rotating arm is provided in the central portion of the chamber to transport wafers between the processing spaces, exhaust passages are provided on the peripheral sides of each processing space, and the exhaust passages are made to merge at the bottom of the chamber, thereby increasing the size of the chamber and complicating the exhaust path. Moreover, in the case of such a structure, it is impossible to provide a beam in the central portion of the chamber. Therefore, the central portion that becomes a vacuum atmosphere may be deformed under the action of atmospheric pressure, which may affect the process performance of each processing space. Therefore, it is expected to take into account both the setting of the rotating mechanism of the rotating arm to the central portion of the vacuum processing container (chamber) and the simplification of the exhaust passage. In addition, it is expected to suppress the deformation of the vacuum processing container.

[0023] [Structure of substrate processing apparatus]

[0024] Figure 1 This is an exploded perspective view showing an example of the structure of a substrate processing apparatus according to one embodiment of the present disclosure. Figure 1The substrate processing device 2 shown is used as an example of a film forming device that performs plasma CVD (Chemical Vapor Deposition) processing on a wafer W. In addition, the substrate processing device 2 is an example of a processing module and a vacuum processing device. Figure 1 As shown, the substrate processing device 2 includes a processing container (vacuum container) 20 that is rectangular when viewed from above. The processing container 20 is configured to maintain a vacuum atmosphere inside. In other words, the processing container 20 is an example of a vacuum processing container. The processing container 20 is configured to close the open portion of the upper surface using the gas supply unit 4 and the manifold 36 described later. In addition, Figure 1 In the figure, internal partitions and the like are omitted to facilitate identification of the relationship between the processing spaces S1 to S4 and the rotary arm 3. The processing container 20 has two inlet and outlet ports 21 formed on the side surface connected to the vacuum transfer chamber (not shown), aligned along the Y direction. The inlet and outlet ports 21 are opened and closed by gate valves (not shown).

[0025] A plurality of processing spaces S1 to S4 are provided inside the processing container 20. A loading table 22 is provided in each of the processing spaces S1 to S4. The loading table 22 can move in the up and down directions, and moves upward when the wafer W is processed, and moves downward when the wafer W is transported. A conveying space T is provided in the lower part of the processing spaces S1 to S4, which connects the processing spaces S1 to S4 and transports the wafer W using the rotating arm 3. In addition, the conveying space T in the lower part of the processing spaces S1 and S2 is connected to each of the feed-in and feed-out ports 21, and the wafer W is fed in and out of the vacuum conveying chamber using a substrate conveying mechanism not shown in the figure. In addition, the substrate conveying mechanism is configured so that the substrate holding portion of the substrate conveying mechanism can, for example, simultaneously hold two wafers W so as to deliver the two wafers W to the substrate processing device 2 at a time.

[0026] When viewed from the top, the stages 22 in processing spaces S1 to S4 are arranged in two rows and two columns. This layout creates different spacing between rows and columns. Specifically, when comparing the pitch Py (the Y-direction spacing between rows) and the pitch Px (the X-direction spacing between columns) between the stages 22, Py > Px.

[0027] Figure 2 This is a diagram showing an example of the positional relationship between the processing space and the rotary arm at the standby position. Figure 3 FIG. 1 is a diagram showing an example of the positional relationship between the processing space and the rotating arm at the wafer holding position. Figure 2 and Figure 3As shown, the rotating arm 3 has: four end effectors 32, which can hold the wafers W placed on the stages 22; and a base member 33, whose rotation axis is located at the center of the layout of two rows and two columns. The four end effectors 32 are connected to the base member 33 in an X-shaped manner. In other words, the rotating arm 3 has the same number of end effectors 32 as the number of the processing spaces S1 to S4. The X-shape of the rotating arm 3 is as follows: Figure 3 At the holding position of the wafer W shown, the dimension of the X shape in the Y direction corresponding to the row interval is different from the dimension in the X direction corresponding to the column interval.

[0028] exist Figure 2 In the illustrated standby position, the rotary arm 3 is located between the processing spaces S1 to S4 so as not to hinder the vertical movement of the mounting tables 22 . Figure 2 The state in which wafers W are placed on each mounting table 22 is described. The movement of the rotary arm 3 will be described from this state, for example, when wafers W are transported in such a manner that the first and second rows of wafers W are swapped, that is, when wafers W in processing spaces S1 and S2 are transported to processing spaces S3 and S4, or when wafers W in processing spaces S3 and S4 are transported to processing spaces S1 and S2.

[0029] First, each stage 22 is moved to the intersection position of the lower conveying space T, and the lifting pins 26 described later provided on each stage 22 are raised to lift the wafer W. Next, the rotating arm 3 is rotated clockwise by about 30 degrees, as shown in FIG. Figure 3 As shown, each end effector 32 is inserted between the mounting table 22 and the wafer W. Then, the lifting pins 26 are lowered to place the wafer W on each end effector 32. Next, the rotary arm 3 is rotated 180° clockwise to transport the wafer W to the holding position on each mounting table 22. When each mounting table 22 raises the lifting pins 26 to receive the wafer W, the rotary arm 3 is rotated approximately 30° counterclockwise and moves to the standby position. In this way, the rotary arm 3 can be used to transport the wafers W by exchanging the first and second columns. Thus, for example, in a case where different processes are repeated in the processing spaces S1, S2 and the processing spaces S3, S4 (for example, a case where a film forming process and an annealing process are repeated), the time associated with the transport of the wafer W can be shortened.

[0030] Figure 4 FIG. 1 is a diagram showing an example of a wafer movement path in the substrate processing apparatus of this embodiment. Figure 42, the movement path for transporting wafers W from a vacuum transfer chamber (not shown) into the interior of the substrate processing apparatus 2 is described. First, as shown by path F1, a substrate transport mechanism (not shown) in the vacuum transfer chamber simultaneously transports two wafers W to each mounting table 22 at the intersection of the transport space T below the processing spaces S1 and S2 corresponding to the mounting tables 22 in the same row. Each mounting table 22 in the processing spaces S1 and S2 then raises its lift pins 26 to receive the wafers W.

[0031] Next, the rotary arm 3 rotates approximately 30° clockwise from its standby position, inserting the end effector 32 between the wafer W and the mounting table 22 at the lower junction of processing spaces S1 and S2. The lift pins 26 are lowered, placing the wafer W on each end effector 32. To place the wafer W, as shown by path F2, the rotary arm 3 rotates 180° clockwise and transfers the wafer W to the mounting table 22 at the lower junction of the transfer space T between processing spaces S3 and S4 (where the rotary arm 3 holds the wafer W). When the lift pins 26 are raised on the mounting table 22 at the lower junction of processing spaces S3 and S4 to receive the wafer W, the rotary arm 3 rotates approximately 30° counterclockwise and moves to its standby position. In this state, no wafer W is placed on the mounting tables 22 in processing spaces S1 and S2, but wafer W is placed on the mounting tables 22 in processing spaces S3 and S4. Next, as shown in path F1, the substrate conveying mechanism of the vacuum conveying chamber is used to simultaneously deliver two wafers W to each loading platform 22 at the intersection position in the lower part of the processing spaces S1 and S2, and the wafers W are placed on the loading platforms 22 in the processing spaces S1 and S2, so that wafers W are placed on all the loading platforms 22 in the processing spaces S1 to S4.

[0032] Similarly, when transferring wafers, the substrate transfer mechanism first transfers wafers W placed on the transfer table 22 at the lower intersection of processing spaces S1 and S2 to the vacuum transfer chamber. Next, the rotating arm 3 transfers wafers W placed on the transfer table 22 at the lower intersection of processing spaces S3 and S4 to the transfer table 22 at the lower intersection of processing spaces S1 and S2. Next, the substrate transfer mechanism transfers wafers W placed on the transfer table 22 at the lower intersection of processing spaces S1 and S2 to the vacuum transfer chamber. In this manner, by using the rotating arm 3 and a substrate transfer mechanism capable of simultaneously transferring two wafers W, wafers W can be transferred to and from processing spaces S1 to S4.

[0033] Furthermore, when the wafer W is transported by the rotating arm 3, the offset of the wafer W relative to the stage 22 serving as the transport destination can be detected, and the stage 22 can be moved slightly in the XY plane to correct the offset of the wafer W. In this case, the substrate processing apparatus 2 includes offset detection sensors for detecting the offset of the wafer W at rotationally symmetrical positions within the row interval or the column interval on the rotation trajectory of the wafer W held by the rotating arm 3. Figure 4 In the example of FIG. 1 , sensors 31 a and 31 b are provided between the processing spaces S1 and S2 and between the processing spaces S3 and S4 within the line interval, respectively.

[0034] Sensors 31a and 31b are each a set of two optical sensors, for example, and are positioned on a straight line in the X direction passing through the center of the substrate processing apparatus 2, that is, the center of the two-row, two-column layout. This is to align the thermal expansion direction of the processing container 20 for both sensors, thereby reducing errors. Furthermore, the placement of sensors 31a and 31b is not limited to the X direction, as long as it is on a straight line passing through the center of the substrate processing apparatus 2. The substrate processing apparatus 2 compares the front and rear edges of the wafer W detected by the sensors 31a and 31b with the output of an encoder (not shown) installed on the rotary arm 3 to detect the amount of wafer W deviation.

[0035] exist Figure 4 In the example, location P24 indicates when the rear edge of wafer W passes sensor 31b during transport from processing space S2 to processing space S4, and location P42 indicates when the rear edge of wafer W passes sensor 31a during transport from processing space S4 to processing space S2. The substrate processing apparatus 2 can correct the offset of wafer W by slightly moving the mounting table 22 within the XY plane based on the detected offset. Specifically, the substrate processing apparatus 2 adjusts the offset so that wafer W is centered in processing spaces S1 to S4 when the mounting table 22 is raised. The term "slightly" used here refers to an amount within 5 mm.

[0036] Figure 5 FIG. 1 is a diagram showing an example of an exhaust path of a substrate processing apparatus according to this embodiment. Figure 5 , the processing container 20 is viewed from the top surface with the gas supply unit 4 described later removed. Figure 5As shown, a manifold 36 is arranged in the center of the substrate processing apparatus 2. The manifold 36 has a plurality of exhaust passages 361 connected to the processing spaces S1 to S4. Each exhaust passage 361 is connected to a hole 351 of a thrust nut 35 described later at the center lower portion of the manifold 36. Each exhaust passage 361 is connected to an annular flow path 363 within each guide member 362 provided at the upper portion of the processing spaces S1 to S4. In other words, the gas in the processing spaces S1 to S4 is exhausted to the confluent exhaust port 205 described later via the flow path 363, the exhaust passage 361, and the hole 351. The manifold 36 is an example of an exhaust manifold.

[0037] Figure 6 It is a schematic cross-sectional view showing an example of the structure of the substrate processing apparatus according to the present embodiment. Figure 6 The cross section is equivalent to Figure 5 The cross section of the substrate processing apparatus 2 at line AA is shown. The four processing spaces S1 to S4 are constructed similarly to each other and are formed between the mounting table 22 on which the wafer W is mounted and the gas supply unit 4 arranged opposite to the mounting table 22. In other words, within the processing container 20, the mounting table 22 and the gas supply unit 4 are provided for each of the four processing spaces S1 to S4. Figure 6 , processing spaces S1 and S3 are shown. The following description will be made taking processing space S1 as an example.

[0038] The stage 22 also serves as a lower electrode, and is formed into a flat cylindrical shape made of metal or aluminum nitride (AlN) with a metal mesh electrode embedded therein. The stage 22 is supported from below by a support member 23. The support member 23 is formed into a cylindrical shape, extends vertically downward, and passes through the bottom 27 of the processing container 20. The lower end of the support member 23 is located outside the processing container 20 and is connected to the rotation drive mechanism 600. The support member 23 is rotated by the rotation drive mechanism 600. The stage 22 is configured to be able to rotate according to the rotation of the support member 23. In addition, an adjustment mechanism 700 for adjusting the position and inclination of the stage 22 is provided at the lower end of the support member 23. The stage 22 is configured to be able to be raised and lowered between the processing position and the handover position by means of the support member 23 using the adjustment mechanism 700. In Figure 6 In the figure, the stage 22 at the transfer position is depicted by a solid line, and the stage 22 at the processing position is depicted by a dotted line. Furthermore, at the transfer position, the end effector 32 is shown inserted between the stage 22 and the wafer W, and the wafer W is received by the lift pins 26. The processing position refers to the position at which substrate processing (e.g., film formation) is performed, and the transfer position refers to the position at which the wafer W is transferred to and from the substrate transport mechanism or the end effector 32 (not shown).

[0039] A heater 24 is embedded in the mounting table 22. The heater 24 heats each wafer W mounted on the mounting table 22 to, for example, approximately 60° C. to 600° C. The mounting table 22 is connected to a ground potential.

[0040] The mounting platform 22 is also provided with a plurality (e.g., three) of pin through-holes 26a, each of which has a lift pin 26 disposed therein. The pin through-holes 26a extend from the mounting surface (top surface) of the mounting platform 22 to the back surface (bottom surface) opposite the mounting surface. The lift pin 26 is slidably inserted into the pin through-holes 26a. The upper end of the lift pin 26 is suspended from the mounting surface of the pin through-holes 26a. Specifically, the upper end of the lift pin 26 has a larger diameter than the pin through-holes 26a, and a recessed portion having a larger diameter and thickness than the upper end of the lift pin 26 is formed at the upper end of the pin through-holes 26a and capable of accommodating the upper end of the lift pin 26. Consequently, the upper end of the lift pin 26 is secured to the mounting platform 22 and suspended from the mounting surface of the pin through-holes 26a. The lower ends of the lift pins 26 project from the back surface of the mounting table 22 toward the bottom 27 of the processing container 20 and are provided so as to be able to abut against a lift mechanism (not shown).

[0041] When the mounting table 22 is raised to the processing position, the upper ends of the lift pins 26 are received in the recessed portions of the pin through-holes 26a on the mounting surface side. When the mounting table 22 is lowered to the transfer position from this position and the lift pins 26 are raised by a lifting mechanism (not shown), the upper ends of the lift pins 26 protrude from the mounting surface of the mounting table 22.

[0042] The gas supply unit 4 is located at the top of the processing container 20, above the mounting table 22, via a guide member 362 formed of an insulating member. The gas supply unit 4 functions as an upper electrode. The gas supply unit 4 includes a lid 42; a shower plate 43, which forms an opposing surface facing the mounting surface of the mounting table 22; and a gas flow chamber 44 formed between the lid 42 and the shower plate 43. A gas supply pipe 51 is connected to the lid 42, and the shower plate 43 has gas ejection holes 45 arranged vertically and horizontally, extending through the thickness of the shower plate 43. Gas is ejected toward the mounting table 22 in a shower-like manner.

[0043] Each gas supply unit 4 is connected to a gas supply system 50 via a gas supply pipe 51. The gas supply system 50 includes, for example, sources for reactant gas (film-forming gas), purge gas, and cleaning gas, piping, valves V, and a flow rate adjustment unit M. For example, the gas supply system 50 includes a cleaning gas supply source 53, a reactant gas supply source 54, a purge gas supply source 55, valves V1 to V3 provided in the piping of each supply source, and flow rate adjustment units M1 to M3.

[0044] The cleaning gas supply source 53 is connected to the cleaning gas supply passage 532 via the flow adjustment unit M1, valve V1, and remote plasma unit (RPU: Remote Plasma Unit) 531. The cleaning gas supply passage 532 branches into four systems on the downstream side of the RPU 531, and each is connected to the gas supply pipe 51. Valves V11 to V14 are provided for each branch pipe branched on the downstream side of the RPU 531. When cleaning, the corresponding valves V11 to V14 are opened. In addition, Figure 6 In FIG, for convenience, only valves V11 and V14 are shown.

[0045] The reaction gas supply source 54 and the purge gas supply source 55 are connected to the gas supply passage 52 via flow rate adjustment units M2 and M3 and valves V2 and V3, respectively. The gas supply passage 52 is connected to the gas supply pipe 51 via a gas supply pipe 510. Figure 6 In FIG. 5 , the gas supply passage 52 and the gas supply pipe 510 collectively represent the respective supply passages and the respective supply pipes corresponding to the respective gas supply units 4 .

[0046] A high-frequency power supply 41 is connected to the shower plate 43 via a matching box 40. The shower plate 43 functions as an upper electrode facing the mounting table 22. When high-frequency power is applied between the shower plate 43, which serves as the upper electrode, and the mounting table 22, which serves as the lower electrode, the gas (in this example, the reaction gas) supplied from the shower plate 43 to the processing space S1 can be converted into plasma by capacitive coupling.

[0047] Next, the exhaust path from the processing spaces S1 to S4 to the combined exhaust port 205 will be described. Figure 5 and Figure 6 As shown, the exhaust path extends from the annular flow path 363 within each guide member 362 provided at the upper portion of the processing spaces S1 to S4, through each exhaust passage 361, through the confluence portion and hole 351 at the center lower portion of the manifold 36, and to the confluence exhaust port 205. The cross-section of the exhaust passage 361 is formed into a circular shape, for example.

[0048] A guide member 362 for exhaust is provided around each processing space S1 to S4 so as to surround each processing space S1 to S4. The guide member 362 is, for example, an annular body that is spaced apart from the mounting table 22 located at the processing position and surrounds the area around the mounting table 22. The guide member 362 is configured to form a flow path 363 inside that is, for example, rectangular in longitudinal section and annular in plan view. Figure 5 , the processing spaces S1 to S4 , the guide member 362 , the exhaust passage 361 , and the manifold 36 are schematically shown.

[0049] The guide member 362 forms a slit-shaped slit exhaust port 364 that opens toward the processing spaces S1-S4. As a result, slit exhaust ports 364 are formed circumferentially around the sides of each processing space S1-S4. An exhaust passage 361 is connected to the flow path 363, directing the processing gas exhausted from the slit exhaust port 364 toward the confluence portion at the center lower portion of the manifold 36 and toward the hole 351.

[0050] like Figure 5 As shown, when viewed from the top, the processing spaces S1-S2 and S3-S4 are arranged in a 180° rotationally symmetrical arrangement around the manifold 36. Consequently, the flow paths of the processing gas from each processing space S1 to S4 via the slit exhaust port 364, the flow path 363 of the guide member 362, and the exhaust passage 361 to the hole 351 are formed in a 180° rotationally symmetrical arrangement around the hole 351.

[0051] Hole 351 is connected to exhaust pipe 61 via a combined exhaust port 205, which serves as the inner side of thrust pipe 341 of a dual-axis vacuum seal 34 disposed at the center of process vessel 20. Exhaust pipe 61 is connected to vacuum pump 62, which constitutes the vacuum exhaust mechanism, via valve mechanism 7. For example, one vacuum pump 62 is provided for each process vessel 20, and the downstream exhaust pipes of each vacuum pump 62 merge, for example, to be connected to a factory exhaust system.

[0052] The valve mechanism 7 opens and closes the flow path of the processing gas formed in the exhaust pipe 61. The valve mechanism 7 includes, for example, a housing 71 and an opening and closing portion 72. A first opening 73 connected to the exhaust pipe 61 on the upstream side is formed on the upper surface of the housing 71, and a second opening 74 connected to the exhaust pipe on the downstream side is formed on the side surface of the housing 71.

[0053] The opening and closing portion 72 includes, for example, an opening and closing valve 721 formed to a size that closes the first opening 73 and a lifting mechanism 722 provided outside the housing 71 for lifting the opening and closing valve 721 in the housing 71. The opening and closing valve 721 is configured to Figure 6 The closing position of the first opening 73 indicated by the dotted line is Figure 6 The on-off valve 721 can be raised and lowered freely between an open position, indicated by a solid line, that is set back below the first opening 73 and the second opening 74. When the on-off valve 721 is in the closed position, the downstream end of the merging exhaust port 205 is closed, and exhaust within the processing container 20 is stopped. Conversely, when the on-off valve 721 is in the open position, the downstream end of the merging exhaust port 205 is opened, and exhaust within the processing container 20 is exhausted.

[0054] Next, the biaxial vacuum seal 34 and the thrust nut 35 will be described. The biaxial vacuum seal 34 includes a thrust pipe 341 , bearings 342 and 344 , a rotor 343 , a main body 345 , magnetic fluid seals 346 and 347 , and a direct drive motor 348 .

[0055] The thrust pipe 341 is a non-rotating central axis that bears the thrust load applied to the upper center portion of the substrate processing apparatus 2 with the aid of the thrust nut 35. That is, when the processing spaces S1 to S4 are set to a vacuum atmosphere, the thrust pipe 341 bears the vacuum load applied to the center portion of the substrate processing apparatus 2, thereby suppressing deformation of the upper portion of the substrate processing apparatus 2. In addition, the thrust pipe 341 is a hollow structure, and its interior serves as the confluent exhaust port 205. The upper surface of the thrust pipe 341 abuts against the lower surface of the thrust nut 35. In addition, an O-ring (not shown) is used to seal the inner surface of the upper portion of the thrust pipe 341 and the outer surface of the convex portion on the inner circumference of the thrust nut 35. In addition, the lower surface of the thrust pipe 341 is fixed to the main body 345 with bolts (not shown).

[0056] The outer circumference of the thrust nut 35 is threaded, and the thrust nut 35 is threadedly engaged with the bulkhead in the center of the processing container 20. A manifold 36 is provided above the center of the processing container 20. The thrust load is borne by the manifold 36, the bulkhead in the center of the processing container 20, the thrust nut 35, and the thrust pipe 341. Furthermore, a portion of the lower surface of the manifold 36 contacts the upper surface of the thrust nut 35.

[0057] Bearing 342 is a radial bearing that holds the rotor 343 on the thrust pipe 341 side. Bearing 344 is a radial bearing that holds the rotor 343 on the main body 345 side. The rotor 343 is concentrically arranged with the thrust pipe 341 and serves as the central rotation axis of the rotary arm 3. Furthermore, the base member 33 is connected to the rotor 343. Rotation of the rotor 343 causes the rotary arm 3, that is, the end effector 32 and the base member 33, to rotate.

[0058] The main body 345 houses bearings 342 and 344, a rotor 343, magnetic fluid seals 346 and 347, and a direct drive motor 348. Magnetic fluid seals 346 and 347 are located on the inner and outer circumferences of the rotor 343, sealing the processing spaces S1 to S4 from the outside. The direct drive motor 348 is connected to the rotor 343 and drives the rotor 343, thereby rotating the rotary arm 3. The main body 345 is secured to the bottom 27 (bottom surface) of the processing chamber 20 using bolts (not shown). The thrust load applied to the thrust pipe 341 is borne by the processing chamber 20 via the main body 345.

[0059] In other words, the rotor 343 is an example of a hollow rotating cylinder, corresponding to the outer cylinder of the dual-axis vacuum seal 34, an example of a coaxial magnetic fluid seal. Furthermore, the rotor 343 is located equidistant from each of the processing spaces S1 to S4. Furthermore, the thrust pipe 341 is located in the hollow portion on the inner circumference of the rotor 343. The confluent exhaust port 205 within the thrust pipe 341 is an example of an exhaust path, corresponding to the inner cylinder of the dual-axis vacuum seal 34. Furthermore, the upper surface of the thrust pipe 341 is secured to the central partition wall of the processing vessel 20, that is, the upper wall of the processing vessel 20, via a thrust nut 35. Specifically, the thrust pipe 341 supports the manifold 36 relative to the bottom wall (bottom 27) of the processing vessel 20 via the central partition wall and the thrust nut 35.

[0060] Thus, in the dual-axis vacuum seal 34 , the first axis, i.e., the thrust pipe 341 , which is a non-rotating central axis, supports the load on the upper portion of the processing container 20 and serves as a gas exhaust pipe, while the second axis, i.e., the rotor 343 , serves to rotate the rotary arm 3 .

[0061] [Variation 1]

[0062] In the above-mentioned embodiment, the rotating arm 3 is rotated 180° clockwise to transport the wafer W in the processing space S1 to the processing space S3, and the wafer W in the processing space S2 to the processing space S4. However, the rotating arm 3 can also be divided into two and rotated independently. Such a form is described as modification example 1.

[0063] Figure 7 1 is an exploded perspective view showing an example of the structure of a substrate processing apparatus according to Modification 1. Figure 7 As shown, in the substrate processing apparatus 2a of Modification 1, the rotary arm 3 of the embodiment is replaced with rotary arms 3a and 3b. Furthermore, although not shown, a triaxial vacuum seal is provided instead of the dual-axis vacuum seal 34. The structure of the substrate processing apparatus 2a of Modification 1, other than the rotary arms 3a and 3b and the triaxial vacuum seal that drives the rotary arms 3a and 3b, is identical to that of the substrate processing apparatus 2 of the embodiment, and therefore its description is omitted.

[0064] The rotary arm 3a includes two end effectors 32a capable of holding wafers W placed on two mounting tables 22 (a set of processing spaces S1-S3 or S2-S4) that are rotationally symmetrical about the center of a two-row, two-column layout of the mounting tables 22; and a base member 33a whose rotation axis is located at the center of the two-row, two-column layout. The two end effectors 32a are connected to the base member 33a in a rotationally symmetrical manner, that is, in a straight line.

[0065] Like the rotary arm 3a, the rotary arm 3b includes two end effectors 32b capable of holding wafers W placed on two mounting tables 22 (a set of processing spaces S1-S3 or S2-S4) that are rotationally symmetrical about the center of a two-row, two-column layout. The two end effectors 32b are connected to the base member 33b in a rotationally symmetrical manner, that is, in a straight line.

[0066] The triaxial vacuum seal is an example of a coaxial magnetic fluid seal in which the rotating axis corresponding to the rotor 343 of the biaxial vacuum seal 34 is configured as a first rotating cylinder and a second rotating cylinder, each of which is independently rotatable. The first and second rotating cylinders are arranged concentrically with the thrust pipe 341. The second rotating cylinder is positioned further outward from the first rotating cylinder. In other words, the first rotating cylinder is the first outer cylinder of the triaxial vacuum seal, and the second rotating cylinder is an example of the second outer cylinder of the triaxial vacuum seal.

[0067] In the substrate processing apparatus 2a, for example, the rotating arm 3a is connected to the first rotating cylinder, and the rotating arm 3b is connected to the second rotating cylinder. Thus, the rotating arm 3a and the rotating arm 3b can rotate independently. That is, by rotating the rotating arm 3a and the rotating arm 3b at different rotation angles, wafers W can be transported between adjacent processing spaces (reactors) even when the spacing Px and spacing Py of the mounting tables 22 are different. In other words, in the substrate processing apparatus 2a, wafers W can be transported from processing space S1 to processing space S2, from processing space S2 to processing space S3, from processing space S3 to processing space S4, and from processing space S4 to processing space S1.

[0068] [Variation 2]

[0069] In the above embodiment, the inner wall of the thrust pipe 341 serves as the wall surface of the merging exhaust port 205 . However, a gas pipe having a heater may be further provided inside the thrust pipe 341 . This configuration will be described as Modification 2.

[0070] Figure 8 FIG. 1 is a partially enlarged view showing an example of a cross section near the confluent exhaust port of Modification Example 2. Figure 8As shown, in Modification 2, a gas pipe 352 is provided inside the thrust pipe 341. Specifically, the gas pipe 352 is the innermost tube located further inward than the thrust pipe 341, which corresponds to the inner tube of the coaxial magnetic fluid seal. The gas pipe 352 is hollow, and its interior serves as the converging exhaust port 205. A thin sheet-shaped heater 353 is provided on the outer side of the gas pipe 352. Like the thrust pipe 341, the gas pipe 352 does not rotate. The outer circumference of the upper portion of the gas pipe 352 abuts the inner circumference of the thrust nut 35. Furthermore, an O-ring (not shown) seals the outer surface of the upper portion of the gas pipe 352 against the inner circumference of the thrust nut 35. The lower portion of the gas pipe 352 abuts against the upper portion of the exhaust pipe 61 via an unillustrated heat insulator and is sealed with an O-ring (not shown).

[0071] The heater 353 uniformly heats the gas pipe 352 to a temperature of, for example, 180°C. By controlling the heating of the gas pipe 352 using the heater 353, it is possible to suppress the adhesion of deposits to the inner wall of the gas pipe 352 (on the side of the confluent exhaust port 205). Furthermore, by providing multiple control zones, the heater 353 can heat only the desired temperature-raising area. Furthermore, while heating the gas pipe 352, the heater 353 also heats the thrust pipe 341 by radiation. The thrust pipe 341 is heated by radiation from the heater 353, thereby suppressing the adhesion of deposits to the surfaces (outer surfaces) on the processing spaces S1 to S4 side.

[0072] Specifically, in Modification 2, the rotor 343, one of the three axes, is rotatable at the center of the processing chamber 20, while the thrust pipe 341 and the gas pipe 352 are fixed. Alternatively, the gas pipe 352 and heater 353 of Modification 2 can be combined with the three-axis vacuum seal of Modification 1 to provide a four-axis system. In this case, the first and second rotating cylinders, corresponding to the rotating arms 3a and 3b, are rotatable at the center of the processing chamber 20, while the thrust pipe 341 and the gas pipe 352 are fixed.

[0073] Furthermore, in the above-described embodiment, a direct drive motor 348 is used as a method for driving the rotor 343 in the dual-axis vacuum seal 34, but the present invention is not limited to this. For example, a pulley may be provided on the rotor 343, and the motor provided outside the dual-axis vacuum seal 34 may drive the rotor 343 using a timing belt. Alternatively, a gear drive may be implemented by engaging a gear provided on the rotor 343, which serves as an outer cylinder, with a gear of a motor provided externally. Similarly, in the method for driving the first and second rotating cylinders in the three-axis vacuum seal, any of drive using a direct drive motor, drive using a timing belt, and drive using gears may be used.

[0074] According to the above embodiment, the substrate processing apparatus 2 comprises a vacuum processing vessel (processing vessel 20) and a rotary arm 3, whose rotation axis is located in the center (central region) of the vacuum processing vessel. In the rotary arm 3, a hollow rotary cylinder (rotor 343) forms the rotation axis, and the hollow portion of the rotary cylinder forms the exhaust path (merging exhaust port 205) of the vacuum processing vessel. As a result, the rotary arm 3's rotation mechanism (rotor 343, direct drive motor 348) can be positioned in the center of the vacuum processing vessel while simplifying the exhaust path.

[0075] Furthermore, according to this embodiment, the rotating cylinder comprises the outer cylinder (rotor 343) of the coaxial magnetic fluid seal (dual-axis vacuum seal 34), and the exhaust path comprises the inner cylinder (thrust pipe 341) of the coaxial magnetic fluid seal. As a result, both the rotation mechanism of the rotating arm 3 and the simplification of the exhaust path can be achieved.

[0076] Furthermore, according to this embodiment, the rotating cylinder is formed by the outer cylinder of the coaxial magnetic fluid seal, and the exhaust path is formed by the innermost cylinder (gas piping 352) of the coaxial magnetic fluid seal, which is located further inward than the inner cylinder. As a result, the adhesion of deposits to the inner cylinder of the coaxial magnetic fluid seal can be suppressed.

[0077] Furthermore, according to this embodiment, the rotating drum includes a first rotating drum and a second rotating drum, and the outer drum includes a first outer drum and a second outer drum located outside the first outer drum. The first rotating drum is composed of the first outer drum, and the second rotating drum is composed of the second outer drum. As a result, even when the pitch Px and pitch Py of multiple processing spaces (reactors) are different, wafers W can be transported between adjacent processing spaces.

[0078] Furthermore, according to this embodiment, the first outer cylinder and the second outer cylinder can rotate independently. As a result, even when the pitches Px and Py of the plurality of processing spaces (reactors) are different, wafers W can be transported between adjacent processing spaces.

[0079] Furthermore, according to this embodiment, the lower end of the inner tube is fixed to the bottom wall of the vacuum processing container, and the upper end of the inner tube is fixed to the upper wall of the vacuum processing container. As a result, deformation of the vacuum processing container can be suppressed. Furthermore, the bottom wall and upper wall to which the inner tube is fixed are not limited to the bottom wall and upper wall in the strict sense. Rather, the concept encompasses, for example, cases where the inner tube is directly fixed to the bottom wall and upper wall, as well as cases where the inner tube is indirectly fixed to the bottom wall and upper wall via an intermediate member. Any configuration is acceptable, as long as the load of the upper wall is supported by the bottom wall via the inner tube.

[0080] Furthermore, according to this embodiment, multiple processing spaces S1 to S4 are formed in the vacuum processing chamber, and the rotation axis is located at equal distances from the multiple processing spaces S1 to S4. As a result, the rotating arm 3 can be used to transport wafers W between the processing spaces S1 to S4.

[0081] According to this embodiment, the rotary arm 3 includes the end effector 32 capable of holding the same number of wafers W as the number of the plurality of processing spaces S1 to S4. As a result, the wafers W in the processing spaces S1 to S4 can be transported simultaneously.

[0082] Furthermore, according to this embodiment, the vacuum processing chamber includes an exhaust manifold (manifold 36) connecting the plurality of processing spaces S1 to S4 with the exhaust path. The inner cylinder of the coaxial magnetic fluid seal supports the exhaust manifold relative to the bottom wall. As a result, deformation of the vacuum processing chamber can be suppressed.

[0083] Furthermore, according to this embodiment, the outer cylinder of the coaxial magnetic fluid seal is driven by the direct drive motor 348, thereby rotating the rotating cylinder. As a result, the driving portion of the rotating arm 3 can be miniaturized.

[0084] Furthermore, according to the present embodiment, the innermost cylinder is heated by the heater 353. As a result, adhesion of deposits to the inner wall of the gas pipe 352 can be suppressed.

[0085] Furthermore, according to the present embodiment, the inner tube is radiantly heated by the heater 353. As a result, it is possible to suppress the adhesion of deposits to the surface of the inner tube (thrust pipe 341) on the processing spaces S1 to S4 side.

[0086] Furthermore, according to this embodiment, the lower end of the innermost cylinder is fixed to the exhaust pipe 61 of the exhaust path, and the upper end of the innermost cylinder is fixed to the upper wall of the vacuum processing chamber. As a result, it is possible to suppress the adhesion of deposits into the exhaust path (merging exhaust port 205) leading to the exhaust pipe 61.

[0087] The embodiments disclosed herein are illustrative in all respects and should not be construed as restrictive. The embodiments described above may be omitted, replaced, or modified in various forms without departing from the scope of the claims and the spirit thereof.

[0088] For example, in the above embodiment, the substrate processing apparatus 2 is described as an apparatus that performs plasma CVD processing as a substrate processing. However, the disclosed technology can be applied to any apparatus that performs other substrate processing such as plasma etching.

Claims

1. A substrate processing device, wherein: The substrate processing device comprises: Vacuum processing vessels; and A rotating arm, the rotating axis of which is located in the center of the vacuum processing container, In the rotating arm, a rotating cylinder with a hollow interior constitutes the rotating shaft, and the hollow portion of the rotating cylinder constitutes the exhaust path of the vacuum processing container. Wherein, the rotating cylinder is composed of an outer cylinder of a coaxial magnetic fluid seal. The exhaust path is formed by the inner cylinder of the coaxial magnetic fluid seal. The inner cylinder of the coaxial magnetic fluid seal receives a vacuum load applied to a central portion of the substrate processing apparatus.

2. A substrate processing device, wherein: The substrate processing device comprises: Vacuum processing vessels; and A rotating arm, the rotating axis of which is located in the center of the vacuum processing container, In the rotating arm, a rotating cylinder with a hollow interior constitutes the rotating shaft, and the hollow portion of the rotating cylinder constitutes the exhaust path of the vacuum processing container. Wherein, the rotating cylinder is composed of an outer cylinder of a coaxial magnetic fluid seal. The exhaust path is formed by the innermost cylinder of the coaxial magnetic fluid seal, which is located further inward than the inner cylinder. The inner cylinder of the coaxial magnetic fluid seal receives a vacuum load applied to a central portion of the substrate processing apparatus.

3. A substrate processing device, wherein: The substrate processing device comprises: Vacuum processing vessels; and A rotating arm, the rotating axis of which is located in the center of the vacuum processing container, In the rotating arm, a rotating cylinder with a hollow interior constitutes the rotating shaft, and the hollow portion of the rotating cylinder constitutes the exhaust path of the vacuum processing container. Wherein, the rotating cylinder is composed of an outer cylinder of a coaxial magnetic fluid seal. The exhaust path is formed by the inner cylinder of the coaxial magnetic fluid seal. The lower end of the inner cylinder is fixed to the bottom wall of the vacuum processing container. The upper end of the inner cylinder is fixed to the upper wall of the vacuum processing container.

4. A substrate processing device, wherein: The substrate processing device comprises: Vacuum processing vessels; and A rotating arm, the rotating axis of which is located in the center of the vacuum processing container, In the rotating arm, a rotating cylinder with a hollow interior constitutes the rotating shaft, and the hollow portion of the rotating cylinder constitutes the exhaust path of the vacuum processing container. Wherein, the rotating cylinder is composed of an outer cylinder of a coaxial magnetic fluid seal. The exhaust path is formed by the innermost cylinder of the coaxial magnetic fluid seal, which is located further inward than the inner cylinder. The lower end of the inner cylinder is fixed to the bottom wall of the vacuum processing container. The upper end of the inner cylinder is fixed to the upper wall of the vacuum processing container.

5. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The rotating drum includes a first rotating drum and a second rotating drum, The outer cylinder includes a first outer cylinder and a second outer cylinder located outside the first outer cylinder. The first rotating cylinder is composed of the first outer cylinder. The second rotating cylinder is composed of the second outer cylinder.

6. The substrate processing apparatus according to claim 5, wherein: The first outer cylinder and the second outer cylinder are capable of rotating independently of each other.

7. The substrate processing apparatus according to claim 1 or 2, wherein: The lower end of the inner cylinder is fixed to the bottom wall of the vacuum processing container. The upper end of the inner cylinder is fixed to the upper wall of the vacuum processing container.

8. The substrate processing apparatus according to any one of claims 1 to 4, wherein: A plurality of processing spaces are formed in the vacuum processing container. The rotation axis is located at a position equidistant from the plurality of processing spaces.

9. The substrate processing apparatus according to claim 8, wherein: The rotating arm includes an end effector capable of holding the same number of wafers as the number of the plurality of processing spaces.

10. The substrate processing apparatus according to claim 8, wherein: The vacuum processing container includes an exhaust manifold connecting the plurality of processing spaces with the exhaust path. The inner cylinder of the coaxial magnetic fluid seal supports the exhaust manifold relative to the bottom wall.

11. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The outer cylinder of the coaxial magnetic fluid seal is driven by a direct drive motor or gears, thereby rotating the rotating cylinder.

12. The substrate processing apparatus according to claim 2 or 4, wherein: The innermost cylinder is heated by a heater.

13. The substrate processing apparatus according to claim 12, wherein: The inner cylinder is heated by radiation from the heater.

14. The substrate processing apparatus according to claim 2 or 4, wherein: The lower end of the innermost cylinder is fixed to the exhaust pipe of the exhaust path. The upper end of the innermost cylinder is fixed to the upper wall of the vacuum processing container.

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