Display panel

Abstract

The present invention provides a display panel, comprising a substrate, a thin film transistor layer located on the substrate, and an auxiliary layer located between the substrate and the thin film transistor layer. The auxiliary layer includes a first auxiliary layer and a second auxiliary layer at least on a side of the first auxiliary layer close to the substrate. Among them, in the present invention, the dielectric constant of the constituent material of the first auxiliary layer is smaller than the dielectric constant of the constituent material of the substrate, that is, the number of polarization charges formed by polarization of the first auxiliary layer is less, reducing the influence on the charge movement in the active layer, and the dielectric constant of the constituent material of the second auxiliary layer is even smaller, and the second auxiliary layer includes a plurality of auxiliary parts arranged at intervals, which can further reduce the influence on the charge movement in the active layer.

Description

Technical Field

[0001] The present invention relates to the field of display technologies, and in particular to the manufacturing of display devices, specifically to display panels. Background Art

[0002] The component structure of an OLED (Organic Light Emitting Diode) panel is relatively simple, the production cost is relatively low, it is more energy-efficient, and it has the characteristic of being bendable, with a very wide range of applications.

[0003] Currently, the OLED panel realizes the bendable characteristic through a flexible substrate. A large number of polarizable charges existing in the flexible substrate are easily polarized to form a large number of polarized charges, thereby having a polarization effect on the active layer of the transistor in the pixel circuit, resulting in relatively low reliability of the transistor operation and reducing the quality of the display image of the OLED panel.

[0004] Therefore, the reliability of the transistors in the pixel circuit of the existing OLED panel is relatively low and needs to be improved urgently. Summary of the Invention

[0005] The purpose of the present invention is to provide a display panel to solve the problem of relatively low reliability of the transistors caused by the polarization effect of the flexible substrate on the active layer of the transistors in the pixel circuit of the existing OLED panel.

[0006] An embodiment of the present invention provides a display panel, including:

[0007] A substrate;

[0008] A thin film transistor layer located on the substrate, the thin film transistor layer including a plurality of transistors;

[0009] An auxiliary layer located between the substrate and the thin film transistor layer, the auxiliary layer including a first auxiliary layer and a second auxiliary layer at least on a side of the first auxiliary layer close to the substrate, the second auxiliary layer including a plurality of auxiliary parts, and there is a gap between two adjacent auxiliary parts;

[0010] Wherein, the dielectric constant of the constituent material of the first auxiliary layer is less than the dielectric constant of the substrate and greater than the dielectric constant of the constituent material of the second auxiliary layer.

[0011] In one embodiment, the first auxiliary layer includes a polarization material, and the second auxiliary layer includes a conductive material.

[0012] In one embodiment, the light transmittance of the first auxiliary layer is greater than the light transmittance of the auxiliary parts.

[0013] In one embodiment, the first auxiliary layer includes amorphous silicon, and the second auxiliary layer includes a metal conductor.

[0014] In one embodiment, the plurality of auxiliary portions are uniformly arranged on the substrate and are in direct contact with the surface of the substrate.

[0015] In one embodiment, the first auxiliary layer covers the plurality of auxiliary portions and fills the gap, and the first auxiliary layer is also in direct contact with the surface of the substrate.

[0016] In one embodiment, the thickness of the first auxiliary layer is less than or equal to 10 angstroms.

[0017] In one embodiment, at least one of a convex portion and a concave portion is included on a side of the auxiliary portion close to the first auxiliary layer.

[0018] In one embodiment, a first distance from the surface of the first auxiliary layer corresponding to the auxiliary portion close to the thin film transistor layer to the surface of the substrate is greater than a second distance from the surface of the first auxiliary layer corresponding to the gap close to the thin film transistor layer to the surface of the substrate.

[0019] In one embodiment, the second auxiliary layer is further located on a side of the first auxiliary layer away from the substrate. A plurality of the auxiliary portions in the second auxiliary layer located on the side of the first auxiliary layer away from the substrate and a plurality of the auxiliary portions in the other second auxiliary layer located on the side of the first auxiliary layer close to the substrate correspond to each other one by one, and the two corresponding auxiliary portions are disposed opposite to each other.

[0020] The present invention provides a display panel, including: a substrate; a thin film transistor layer located on the substrate, the thin film transistor layer including a plurality of transistors; an auxiliary layer located between the substrate and the thin film transistor layer, the auxiliary layer including a first auxiliary layer and a second auxiliary layer at least on a side of the first auxiliary layer close to the substrate, the second auxiliary layer including a plurality of auxiliary portions, and a gap being between two adjacent auxiliary portions; wherein, a dielectric constant of a constituent material of the first auxiliary layer is less than a dielectric constant of a constituent material of the substrate and greater than a dielectric constant of a constituent material of the second auxiliary layer. Wherein, by providing the first auxiliary layer with a dielectric constant less than that of the substrate, the present invention reduces the influence on the charge movement in the active layer, and by providing the second auxiliary layer with an even smaller dielectric constant, but the second auxiliary layer includes a plurality of auxiliary portions arranged at intervals, the influence on the charge movement in the active layer can be further reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The present invention will be further described below with reference to the drawings. It should be noted that the drawings in the following description are only used to explain some embodiments of the present invention, and those skilled in the art can obtain other drawings based on these drawings without creative efforts.

[0022] Figure 1 This is a schematic cross-sectional view of a display panel provided by an embodiment of the present invention.

[0023] Figure 2 This is another schematic cross-sectional view of a display panel provided by an embodiment of the present invention.

[0024] Figure 3 This is a flowchart of a method for manufacturing a display panel provided by an embodiment of the present invention.

[0025] Figure 4 This is a schematic diagram of a scenario of a method for manufacturing a display panel provided by an embodiment of the present invention. Detailed implementation manners

[0026] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of the present invention.

[0027] In the description of the present invention, it should be understood that the orientation or positional relationships indicated by the terms "upper", "lower", "near", "far", "both ends", etc. are based on the orientation or positional relationships shown in the accompanying drawings. For example, "upper" only means that the surface is above the object, and specifically referring to directly above, obliquely above, or the upper surface is all acceptable as long as it is above the horizontal of the object; "both ends" refer to the relative two positions of the object that can be reflected in the figure, and the two positions can be in direct or indirect contact with the object. The above orientation or positional relationships are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0028] In addition, it should also be noted that the accompanying drawings only provide the structures and steps that are relatively closely related to the present invention, and some details that are not closely related to the invention are omitted. The purpose is to simplify the accompanying drawings and make the invention points clear at a glance, rather than indicating that the actual devices and methods are exactly the same as the accompanying Figure 1 drawings and not being used as a limitation of the actual devices and methods.

[0029] The present invention provides a display panel, and the display panel includes but is not limited to the following embodiments and combinations between the following embodiments.

[0030] In one embodiment, as Figure 1 and Figure 2As shown, the display panel 100 includes: a substrate 10; a thin film transistor layer located on the substrate 10, the thin film transistor layer including a plurality of transistors 20; an auxiliary layer located between the substrate 10 and the thin film transistor layer, the auxiliary layer including a first auxiliary layer 30 and a second auxiliary layer 40 at least on a side of the first auxiliary layer 30 close to the substrate 10, the second auxiliary layer 40 including a plurality of auxiliary portions 401, and there being a gap between two adjacent auxiliary portions 401; wherein, the dielectric constant of the constituent material of the first auxiliary layer 30 is less than the dielectric constant of the constituent material of the substrate 10 and greater than the dielectric constant of the constituent material of the second auxiliary layer 40.

[0031] Wherein, the constituent material of the substrate 10 may include polyimide. Further, as Figure 1 and Figure 2 shown, the substrate 10 may include a first substrate 101, a second substrate 102 located on a side of the first substrate 101 close to the thin film transistor layer, and a first buffer layer 103 located between the first substrate 101 and the second substrate 102. The constituent materials of the first substrate 101 and the second substrate 102 may include polyimide, and the constituent material of the first buffer layer 103 may include at least one of silicon oxide and silicon nitride. For example, the first buffer layer 103 made of silicon oxide has the functions of water absorption and heat preservation, and can extend the lifespan of the display panel 100.

[0032] Specifically, as Figure 1 and Figure 2 shown, the transistor 20 may include an active layer 201, a gate layer 202 located on a side of the active layer 201 away from the substrate 10, and a source-drain layer located on a side of the gate layer 202 away from the substrate 10. The source-drain layer includes a source portion 203 disposed opposite to and electrically connected to one end portion of the active layer 201, and a drain portion 204 disposed opposite to and electrically connected to one end portion of the active layer 201. Further, the display panel 100 further includes a first insulating layer 205 located between the active layer 201 and the gate layer 202 and covering the active layer 201, a second insulating layer 206 covering the side of the gate layer 202 away from the substrate 10, a metal layer 207 located on the side of the second insulating layer 206 away from the substrate 10, and an interlayer dielectric layer 208 located between the metal layer 207 and the source-drain layer and covering the metal layer 207.

[0033] Among them, the constituent materials of the active layer 201 may include at least one of amorphous silicon and polycrystalline silicon. The polycrystalline silicon may include low-temperature polycrystalline silicon. Further, the constituent materials of the active layer 201 may also include oxides. It can be understood that, for example, preparing the active layer 201 using low-temperature polycrystalline silicon technology can have a relatively high electron mobility. In this way, when the transistor 20 charges the corresponding pixel, a relatively large driving current can be generated to improve the charging speed. For example, the active layer 201 prepared using amorphous silicon or an oxide can have a low leakage current to prevent the leakage of the transistor 20 during exposure from interfering with the signal. Specifically, for example, when the constituent material of the active layer 201 includes amorphous silicon, both ends of the active layer 201 electrically connected to the source-drain layer may be doped with particles to form two doped regions. The doped particles may include phosphorus ions, and the concentration of the doped particles in the doped regions can be set according to the actual situation. For example, when the constituent material of the active layer 201 includes an oxide, setting doped particles to form doped regions can be avoided.

[0034] Further, in combination with the above discussion, as Figure 1 and Figure 2 shown, the source-drain layer can extend to be electrically connected to the active layer 201 through vias that penetrate the interlayer dielectric layer 208, the second insulating layer 206, and part of the first insulating layer 205. Specifically, the first via communicates with one side of the active layer 201 far from the substrate 10 and the side of the interlayer dielectric layer 208 far from the substrate 10, and the second via communicates with the other side of the active layer 201 far from the substrate 10 and the side of the interlayer dielectric layer 208 far from the substrate 10. The source portion 203 is filled in the first via and extends to the side of the interlayer dielectric layer 208 far from the substrate 10, and the drain portion 204 is filled in the second via and extends to the side of the interlayer dielectric layer 208 far from the substrate 10. Among them, the metal layer 207 can be disposed opposite to the gate layer 202 to form a capacitor in the corresponding pixel circuit.

[0035] Specifically, the constituent materials of the first insulating layer 205, the second insulating layer 206, and the interlayer dielectric layer 208 may include at least one of inorganic dielectric materials and organic dielectric materials. The inorganic dielectric material may be silicon oxide, silicon nitride, or silicon oxynitride, and the organic dielectric material may be a polyimide-based resin, an epoxy-based resin, or an acrylic-based resin material. Specifically, the constituent materials of the gate layer 202, the metal layer 207, and the source-drain layer may include at least one of conductive materials such as metals, metal oxides, metal nitrides, and metal oxynitrides. The metal may be copper, aluminum, molybdenum, or titanium.

[0036] It should be noted that in combination with Figure 1 and Figure 2As shown, a large number of polarizable charges existing in the substrate 10 are extremely vulnerable to external influences or the internal electric field of the display panel 100, and are polarized to form a large number of polarized charges. If the auxiliary layer is not provided, a large number of polarized charges in the substrate 10 on the side of the substrate 10 close to the thin film transistor layer will polarize the active layer 201, affecting the movement of charges in the active layer 201 and reducing the reliability of the operation of the transistor 20.

[0037] It can be understood that the dielectric constant of the constituent material of the first auxiliary layer 30 in this embodiment is less than the dielectric constant of the substrate 10. According to the rule that "the larger the dielectric constant, the easier it is to be polarized", it can be known that it is more difficult for the first auxiliary layer 30 to be polarized relative to the substrate 10. Therefore, even if a large number of polarized charges are formed in the substrate 10 and there is an electric field influence inside the display panel 100, the number of polarized charges formed by the polarization of the first auxiliary layer 30 located between the substrate 10 and the transistor 20 can still be much smaller than the number of polarized charges formed by the polarization of the substrate 10 when the first auxiliary layer 30 is not provided. Therefore, the influence on the movement of charges in the active layer 201 can be reduced, and the reliability of the operation of the transistor 20 is improved.

[0038] Furthermore, the dielectric constant of the constituent material of the second auxiliary layer 40 in this embodiment is less than the dielectric constant of the constituent material of the first auxiliary layer 30. Similarly, according to the above analysis, at least the number of polarized charges formed by the polarization of the second auxiliary layer 40 on the side of the first auxiliary layer 30 close to the substrate 10 can still be much smaller than the number of polarized charges formed by the polarization of the first auxiliary layer 30 when the second auxiliary layer 40 is not provided. Therefore, the influence on the movement of charges in the active layer 201 can be further reduced, and the reliability of the operation of the transistor 20 is further improved.

[0039] In this embodiment, by arranging the second auxiliary layer 40 to be composed of a plurality of auxiliary parts 401 arranged at intervals, it is possible to prevent the second auxiliary layer 40 from completely covering the substrate 10. When at least one of the situations that the display panel 100 includes a photosensitive device located below the auxiliary layer or below the substrate 10 and the display panel 100 is a bottom-emitting display device exists, the setting manner of the second auxiliary layer 40 can ensure the light transmittance of the display panel 100 to avoid blocking more light, and improve at least one of the brightness of the display panel 100 and the reliability of the operation of the photosensitive device. Herein, the shape and size of the auxiliary part 401 in this embodiment are not limited.

[0040] It should be noted that although the dielectric constant of the composition material of the second auxiliary layer 40 is small, the light transmittance is generally small compared to the first auxiliary layer 30. That is, although the second auxiliary layer 40 can weaken the polarization phenomenon in the active layer 201 to a greater extent, there is a disadvantage of small light transmittance. However, in combination with the above discussion, in this embodiment, the second auxiliary layer 40 is arranged to be composed of a plurality of auxiliary parts 401 arranged at intervals. Based on the aspect that "the dielectric constant of the composition material of the second auxiliary layer 40 is small", the first auxiliary layer 30 with a large light transmittance of the composition material is filled between adjacent two auxiliary parts 401 to avoid too small light transmittance of the plane where the second auxiliary layer 40 is located.

[0041] In one embodiment, the first auxiliary layer 30 fills the gap. As can be understood from the above discussion, on the one hand, by setting the gap in this embodiment and filling the gap with the first auxiliary layer 30 with a large light transmittance, the light transmittance of the display panel 100 can be effectively improved. On the other hand, due to a plurality of gaps, the plurality of auxiliary parts 401 cannot be arranged to coincide with the substrate 10, so that they cannot act on the entire substrate 10. In this embodiment, the first auxiliary layer 30 with a dielectric constant smaller than that of the substrate is used to fill the gap to act on the substrate 10. Combining the above discussion, that is, the number of polarization charges formed by the polarization of the first auxiliary layer 30 can still be much smaller than the number of polarization charges formed by the polarization of the substrate 10 when the first auxiliary layer 30 is not provided. On the basis of the action of the second auxiliary layer 40 on the substrate 10, the influence on the charge movement in the active layer 201 can be further reduced by the first auxiliary layer 30.

[0042] In one embodiment, the second auxiliary layer 40 is a conductor. It can be understood that, on the one hand, the dielectric constant of a conductor is close to 0. Combining the above discussion, the influence on the charge movement in the active layer 201 can be greatly reduced. On the other hand, the resistivity of a conductor is very small and it is easy to conduct current. There are a large number of freely movable charged particles in the conductor, which can attract the polarization charges formed by the polarization of the first auxiliary layer 30 with a relatively large dielectric constant to homogenize the distribution of positively charged polarization charges and negatively charged polarization charges. Further, it can also make the positively charged polarization charges and negatively charged polarization charges recombine to reduce the number of polarization charges and weaken the directionality of polarization, also greatly reducing the influence on the charge movement in the active layer 201.

[0043] Among them, the constituent material of the second auxiliary layer 40 may include a metal conductor. Since the conductivity of a metal conductor is generally greater than that of other conductor materials, and the resistivity of a metal conductor generally decreases as the temperature decreases. At extremely low temperatures, the resistivity of certain metal conductors and alloys will disappear and transform into "superconductors", which can further reduce the influence of charge movement in the active layer 201. Specifically, the metal conductor in this embodiment may be, but is not limited to, indium tin oxide, silver, molybdenum, aluminum, graphene, superconducting metal, superconducting alloy. It can be understood that the above-listed metal conductors have a relatively high light transmittance compared to other metal conductors to avoid significantly reducing the light transmittance of the display panel 100, and have a relatively small elastic modulus to meet the stress and strain requirements of the display panel 100.

[0044] In one embodiment, as Figure 1 and Figure 2 shown, a plurality of the auxiliary portions 401 are uniformly arranged and are in direct contact with the surface of the substrate. It can be understood that, in combination with the above discussion, on the one hand, the number of polarization charges formed by polarizing the second auxiliary layer 40 is extremely small, and the second auxiliary layer 40 is disposed close to the active layer 201, that is, each auxiliary portion 401 can weaken the polarization effect of the corresponding position in the substrate 10 and the corresponding position in the first auxiliary layer 30 on the active layer 201. Therefore, a plurality of uniformly arranged auxiliary portions 401 can homogenize the region where the influence of charge movement in the active layer 201 is weakened, and further optimize the manner of weakening the influence of charge movement in the active layer 201; on the other hand, a plurality of uniformly arranged auxiliary portions 401 can homogenize the arrangement of the corresponding plurality of gaps to homogenize the light transmittance of each region in the display panel 100 and optimize the manner of improving the light transmittance of the display panel 100.

[0045] Furthermore, when the second auxiliary layer 40 is a conductor, a plurality of uniformly arranged auxiliary portions 401 in this embodiment can also homogenize the region in the second auxiliary layer 40 for attracting the polarization charges of the first auxiliary layer 30, further homogenize the charge distribution of the first auxiliary layer 30, and at the same time can also further homogenize the region in the second auxiliary layer 40 for recombining the polarization charges in the first auxiliary layer 30 to further weaken the directionality of the polarization of the first auxiliary layer 30. Therefore, this embodiment can further greatly reduce the influence of charge movement in the active layer 201.

[0046] In one embodiment, the first auxiliary layer 30 covers one side of a plurality of the auxiliary parts 401 close to the thin film transistor layer. Specifically, in this embodiment, one side of a plurality of the auxiliary parts 401 close to the first auxiliary layer 30 can be wrapped within the first auxiliary layer 30, such that on the basis that a plurality of the auxiliary parts 401 are formed on the substrate 10 and when the surface area of the auxiliary parts 401 is constant, other surfaces of the auxiliary parts 401 that do not contact the substrate 10 can contact the first auxiliary layer 30 and fully act on the polarizable charges in the first auxiliary layer 30, so as to reduce the number of polarizable charges, thereby reducing the influence on the charge movement in the active layer 201. Further, in combination with the above discussion, the first auxiliary layer 30 can cover a plurality of the auxiliary parts 401 and fill the gaps between adjacent auxiliary parts 401, and the first auxiliary layer 30 is also in direct contact with the surface of the substrate 10.

[0047] In one embodiment, as Figure 1 and Figure 2 shown, one side of the auxiliary part 401 close to the first auxiliary layer 30 includes at least one of a convex part and a concave part. Specifically, one side of the auxiliary part 401 close to the first auxiliary layer 30 presents an uneven state, and in combination with the above discussion, the shape of one side of the first auxiliary layer 30 close to the second auxiliary layer 40 matches the shape of one side of a plurality of the auxiliary parts 401 close to the first auxiliary layer 30, that is, one side of the first auxiliary layer 30 close to the second auxiliary layer 40 also includes at least one of a convex part and a concave part. It can be understood that one side of the auxiliary part 401 in this embodiment close to the first auxiliary layer 30 is convex, and the shapes of the sides of the two close to each other match, that is, the second auxiliary layer 40 including a very small number of polarizable charges contacts the first auxiliary layer 30 with a larger area, and a larger proportion of the charges in the first auxiliary layer 30 can be acted on. Correspondingly, the number of charges in the first auxiliary layer 30 that can be polarized by the substrate 10 is small, and the polarization effect on the active layer 201 can be reduced.

[0048] Further, when the second auxiliary layer 40 is a conductor, in this embodiment, the second auxiliary layer 40 and the first auxiliary layer 30 with a relatively large set area increase the area of the region in the second auxiliary layer 40 for attracting the polarizable charges of the first auxiliary layer 30, further increasing the homogenizing effect on the charge distribution in the first auxiliary layer 30. At the same time, the area of the region in the second auxiliary layer 40 for recombining the polarizable charges in the first auxiliary layer 30 is also increased to further weaken the directionality of the polarization of the first auxiliary layer 30. Therefore, this embodiment can further greatly reduce the influence on the charge movement in the active layer 201.

[0049] Among them, the first distance from the surface of the first auxiliary layer 30 near the auxiliary part 401 to the surface of the substrate 10 is greater than the second distance from the surface of the first auxiliary layer 30 near the gap to the surface of the substrate 10. It can be understood that, in combination with the above discussion, a plurality of transistors are further provided on the first auxiliary layer 30. In this embodiment, it is defined that the first distance is greater than the second distance, so as to planarize the side of the first auxiliary layer 30 close to the thin film transistor layer, which is convenient for forming a stable plurality of transistors in the later stage and improving the yield of the manufacturing process. Further, the side of the first auxiliary layer 30 close to the thin film transistor layer can be parallel to the substrate 10.

[0050] In one embodiment, the thickness of the first auxiliary layer 30 is less than 10 angstroms. It can be understood that since the function of the first auxiliary layer 30 is to reduce the influence of the polarization charges in the substrate 10 on the charge movement in the active layer 201, and it is not desired that the thickness of the first auxiliary layer 30 is too large, so in this embodiment, it is defined that the thickness of the first auxiliary layer 30 is less than 10 angstroms, which can maintain the function of the first auxiliary layer 30 while avoiding the increase of the thickness of the display panel 100 or the influence on the stress of the display panel 100 due to the too large thickness of the first auxiliary layer 30. Of course, the thickness of the auxiliary part 401 can also be greater than the thickness of the first auxiliary layer 30.

[0051] In one embodiment, as Figure 2 shown, the second auxiliary layer 40 is also located on the side of the first auxiliary layer 30 away from the substrate 10. A plurality of the auxiliary parts 401 in the second auxiliary layer 40 located on the side of the first auxiliary layer 30 away from the substrate 10 and a plurality of the auxiliary parts 401 in the other second auxiliary layer 40 located on the side of the first auxiliary layer 30 close to the substrate 10 correspond to each other one by one, and the two corresponding auxiliary parts 401 are arranged oppositely.

[0052] Specifically, after forming the first auxiliary layer 30, a plurality of grooves can be formed by, but not limited to, the yellow light process. The plurality of grooves can correspond to a plurality of auxiliary parts 401 in the second auxiliary layer 40 located on the side of the first auxiliary layer 30 close to the substrate 10 one by one. Then, a plurality of auxiliary parts 401 are formed in the plurality of grooves by, but not limited to, physical vapor deposition to form another second auxiliary layer 40 located on the side of the first auxiliary layer 30 close to the substrate 10. It can be understood that when the thickness of the first auxiliary layer 30 is greater than the thickness of the second auxiliary layer 40 on the side close to the substrate 10, a plurality of auxiliary parts 401 on the side away from the substrate 10 can be formed to further act on the polarization charges in the first auxiliary layer 30, thereby further reducing the influence on the charge movement in the active layer 201. At the same time, since the two corresponding auxiliary parts 401 are arranged oppositely, the light transmittance of the display panel 100 is not additionally reduced.

[0053] In one embodiment, the constituent material of the first auxiliary layer 30 includes a polarizing material. Herein, polarization can be understood as a phenomenon in which the movement of current ultimately causes the potential to deviate from the open-circuit potential of the electrode. The "polarizing material" here can be understood as a material with polarizing properties. For example, it can polarize the substrate 10, or the first auxiliary layer 30 itself can be polarized. Specifically, the constituent material of the first auxiliary layer 30 can include amorphous silicon. The adsorption force between the amorphous silicon and the substrate 10 is relatively large, which is beneficial to the formation of the first auxiliary layer 30 and improves the stability between the auxiliary layer and the substrate 10. Specifically, amorphous silicon can be prepared from natural silicon oxides, with low cost, and amorphous silicon is a semiconductor, which can reduce the influence of the polarized charges in the substrate 10 on the charge movement of the active layer 201.

[0054] In one embodiment, as Figure 1 and Figure 2 shown, the display panel 100 further includes: a buffer layer 50, located on the side of the auxiliary layer close to the thin-film transistor layer. The constituent material of the buffer layer 50 includes at least one of silicon nitride and silicon oxide. It should be noted that the side of the auxiliary layer formed by chemical vapor deposition process or physical vapor deposition process close to the thin-film transistor layer will be relatively rough. In this embodiment, a buffer layer 50 with a certain thickness can be formed by, but not limited to, chemical vapor deposition process, that is, it can be understood that the side of the buffer layer 50 close to the thin-film transistor layer will be relatively flat, which is beneficial to the formation of the thin-film transistor layer.

[0055] Among them, the buffer layer 50 formed by at least one of silicon nitride and silicon oxide can have the function of absorbing water to prevent external water vapor from invading and damaging the light-emitting device, and can also have the function of heat preservation to prevent strong temperature changes in the manufacturing process to reduce the reliability of the active layer 201. Specifically, the buffer layer 50 can include a second buffer layer 501 and a third buffer layer 502 located on the second buffer layer 501. The constituent material of one of the second buffer layer 501 and the third buffer layer 502 can include silicon oxynitride, and the constituent material of the other of the second buffer layer 501 and the third buffer layer 502 can include silicon oxide; further, the buffer layer 50 can further include a third buffer layer made of silicon oxynitride. Further, a dielectric layer can also be provided between the buffer layer 50 and the thin-film transistor layer. The dielectric layer is used to insulate the active layer 201 from other film layers, and the constituent material of the dielectric layer can refer to the relevant description of the constituent material of the buffer layer 50 above.

[0056] The present invention also provides a method for manufacturing a display panel, and the method includes, but is not limited to, the following embodiments and combinations between the following embodiments.

[0057] In one embodiment, in combination with Figure 3 andFigure 4 As shown, the manufacturing method of the display panel includes but is not limited to the following steps.

[0058] S10, Provide a substrate.

[0059] Specifically, in combination with Figures 1 to 4 As shown, the substrate 10 may include a first substrate 101, a second substrate 102 located on the first substrate 101 close to the thin-film transistor layer, and a first buffer layer 103 located between the first substrate 101 and the second substrate 102. The constituent materials of the first substrate 101 and the second substrate 102 may include polyimide, and the constituent material of the first buffer layer 103 may include at least one of silicon oxide and silicon nitride. For example, the first buffer layer 103 made of silicon oxide has the functions of water absorption and heat preservation, and can extend the life of the display panel 100.

[0060] S20, Form an auxiliary layer on the substrate. The auxiliary layer includes a first auxiliary layer and a second auxiliary layer at least on one side of the first auxiliary layer close to the substrate. The second auxiliary layer includes a plurality of auxiliary parts, and there is a gap between two adjacent auxiliary parts. The dielectric constant of the constituent material of the first auxiliary layer is less than the dielectric constant of the substrate and greater than the dielectric constant of the constituent material of the second auxiliary layer. The light transmittance of the first auxiliary layer is greater than the light transmittance of the second auxiliary layer.

[0061] It should be noted that, in combination with the above discussion, if the auxiliary layer is not provided, after a large number of polarizable charges in the substrate 10 are polarized to form a large number of polarized charges, it will have a polarization effect on the active layer 201, resulting in the movement of charges in the active layer 201 being affected.

[0062] Among them, in combination with Figures 1 to 4 As shown, the second auxiliary layer 40 is at least located on one side of the first auxiliary layer 30 close to the substrate 10, that is, the second auxiliary layer 40 can be formed before the first auxiliary layer 30. Specifically, the second auxiliary layer 40 can be formed on at least the second substrate 102 by physical vapor deposition. For example, the material source of the constituent material of the second auxiliary layer 40 is vaporized into gaseous atoms or molecules on the surface, or partially ionized into ions, and deposited on the surface of the second substrate 102 through a plasma process to form the second auxiliary layer 40. It should be noted that the energy used for depositing the second auxiliary layer 40 can be small to avoid the constituent material of the second auxiliary layer 40 splashing into the substrate 10 and even causing the substrate 10 to warp.

[0063] On this basis, further, a mask plate with multiple openings can be used in combination with physical vapor deposition to deposit a plurality of auxiliary parts 401 corresponding to the multiple openings one by one on the surface of the second substrate 102 to form the second auxiliary layer 40. Specifically, the number and arrangement of the plurality of auxiliary parts 401 are not limited here, and reference can be made to the above description of the auxiliary part 401.

[0064] Among them, in combination Figures 1 to 4 As shown, after the second auxiliary layer 40 is formed, the first auxiliary layer 30 can be formed on the second auxiliary layer 40 by chemical deposition, and the first auxiliary layer 30 can cover part or all of the second auxiliary layer 40. Specifically, as Figure 1 , Figure 2 and Figure 4 As shown, here, taking the second auxiliary layer 40 including a plurality of spaced-apart auxiliary parts 401 as an example, the constituent materials of the first auxiliary layer 30 can be deposited on the substrate 10 and the plurality of auxiliary parts 401 to form the first auxiliary layer 30. Among them, the thickness of the first auxiliary layer 30 can be less than 10 angstroms.

[0065] It can be understood that the dielectric constant of the constituent material of the first auxiliary layer 30 in this embodiment is less than that of the substrate 10. According to the rule that "the larger the dielectric constant, the easier it is to generate polarization", it can be known that it is more difficult for the first auxiliary layer 30 to be polarized relative to the substrate 10. Therefore, even if a large number of polarized charges are formed in the substrate 10 and there is an electric field influence inside the display panel 100, the number of polarized charges formed by the polarization of the first auxiliary layer 30 located between the substrate 10 and the transistor 20 can still be much smaller than the number of polarized charges formed by the polarization of the substrate 10 when the first auxiliary layer 30 is not provided. Therefore, the influence of the charge movement in the active layer 201 can be reduced, and the reliability of the operation of the transistor 20 is improved.

[0066] Furthermore, the dielectric constant of the constituent material of the second auxiliary layer 40 in this embodiment is less than that of the constituent material of the first auxiliary layer 30. Similarly, according to the above analysis, the number of polarized charges formed by the polarization of at least the second auxiliary layer 40 on the side of the first auxiliary layer 30 close to the substrate 10 can still be much smaller than the number of polarized charges formed by the polarization of the first auxiliary layer 30 when the second auxiliary layer 40 is not provided. Therefore, the influence of the charge movement in the active layer 201 can be further reduced, and the reliability of the operation of the transistor 20 is further improved.

[0067] It should be noted that although the dielectric constant of the second auxiliary layer 40 is small, its light transmittance is relatively large compared to that of the first auxiliary layer 30. That is, although the second auxiliary layer 40 can weaken the polarization phenomenon in the active layer 201 to a greater extent, it has the disadvantage of low light transmittance. It can be understood that in this embodiment, by arranging the second auxiliary layer 40 to be composed of a plurality of auxiliary parts 401 arranged at intervals, it is possible to prevent the second auxiliary layer 40 from completely covering the substrate 10. When at least one of the following two situations exists: the display panel 100 includes a photosensitive device located below the auxiliary layer or below the substrate 10, and the display panel 100 is a bottom-emitting display device, the setting method of the second auxiliary layer 40 can ensure the light transmittance of the display panel 100 to avoid blocking too much light, thereby improving at least one of the brightness of the display panel 100 and the working reliability of the photosensitive device. Among them, the shape and size of the auxiliary part 401 in this embodiment are not limited.

[0068] S30, forming a thin film transistor layer on the side of the auxiliary layer away from the substrate, the thin film transistor layer including a plurality of transistors.

[0069] Among them, in combination with Figure 1 , Figure 2 and Figure 4 as shown, the transistor 20 may include an active layer 201, a gate layer 202 located on the side of the active layer 201 away from the substrate 10, and a source-drain layer located on the side of the gate layer 202 away from the substrate 10. The source-drain layer includes a source part 203 disposed opposite to and electrically connected to one end of the active layer 201, and a drain part 204 disposed opposite to and electrically connected to one end of the active layer 201. Further, the display panel 100 further includes a first insulating layer 205 located between the active layer 201 and the gate layer 202 and covering the active layer 201, a second insulating layer 206 covering the side of the gate layer 202 away from the substrate 10, a metal layer 207 located on the side of the second insulating layer 206 away from the substrate 10, and an interlayer dielectric layer 208 located between the metal layer 207 and the source-drain layer and covering the metal layer 207. Specifically, the relevant description of the specific structure in the transistor 20 can refer to the relevant description of the specific structure in the transistor 20 in the above text.

[0070] Further, in combination with Figure 1 , Figure 2 and Figure 4 and the above discussion, before forming the thin film transistor layer, a buffer layer 50 can be formed on the side of the auxiliary layer away from the substrate 10. For example, a second buffer layer 501 can be formed first on the side of the auxiliary layer away from the substrate 10, and then a third buffer layer 502 can be formed on the side of the second buffer layer 501 away from the substrate 10. The composition materials of the second buffer layer 501 and the third buffer layer 502 can refer to the relevant description in the above text.

[0071] Specifically, for example, when the constituent material of the active layer 201 includes amorphous silicon, the active layer 201 can be directly formed of amorphous silicon material on the side of the buffer layer 50 away from the substrate 10. Of course, an excimer laser annealing process can also be used to process the amorphous silicon thin film to form a polycrystalline silicon thin film, and then the active layer 201 can be formed through patterning. Specifically, for the active layer 201 made of amorphous silicon, doping particles can be injected into both ends of the active layer 201 to form two doped regions, and then the first insulating layer 205 covering the active layer 201 can be formed; alternatively, the first insulating layer 205 covering the active layer 201 can be formed first, and then doping particles can be injected into the first insulating layer 205 to indirectly flow into both ends of the active layer 201 to form two doped regions. Specifically, the gate layer 202 can be formed on the side of the first insulating layer 205 away from the substrate 10 by, but not limited to, evaporation or physical vapor deposition processes, and combined with patterning. Further, the orthographic projection of the gate layer 202 on the plane where the active layer 201 is located can be located within the boundary of the active layer 201. The gate layer 202 can be used as a blocking portion, and doping particles can be injected into the portion of the active layer 201 that extends beyond the gate layer 202 to promote the formation of the two doped regions. The doping concentration this time can be higher than the previous doping concentration. Specifically, the second insulating layer 206 covering the gate layer 202 can be formed, and then the metal layer 207 can be formed on the second insulating layer 206 by, but not limited to, evaporation or physical vapor deposition processes, and combined with patterning. The metal layer 207 and the gate layer 202 are arranged oppositely to form a capacitor. Specifically, the interlayer dielectric layer 208 covering the metal layer 207 can be formed, and then two vias penetrating through the interlayer dielectric layer 208, the second insulating layer 206, and part of the first insulating layer 205 can be formed. The two vias communicate with both ends of the active layer 201 and the side of the interlayer dielectric layer 208 away from the substrate 10. Then, the constituent material of the source-drain layer is filled in the vias and extended to the side of the interlayer dielectric layer 208 away from the substrate 10, and combined with patterning to form the source portion 203 and the drain portion 204. Further, film layers such as a light-emitting layer, a pixel definition layer, and a packaging layer can be formed on the side of the interlayer dielectric layer 208 away from the substrate 10 and the side of the source-drain layer away from the substrate 10.

[0072] The present invention provides a display panel, comprising: a substrate; a thin film transistor layer located on the substrate, the thin film transistor layer including a plurality of transistors; an auxiliary layer located between the substrate and the thin film transistor layer, the auxiliary layer including a first auxiliary layer and a second auxiliary layer at least on a side of the first auxiliary layer close to the substrate, the second auxiliary layer including a plurality of auxiliary portions, and there being a gap between two adjacent auxiliary portions; wherein, the dielectric constant of the constituent material of the first auxiliary layer is less than the dielectric constant of the constituent material of the substrate and greater than the dielectric constant of the constituent material of the second auxiliary layer. Among them, by providing the first auxiliary layer with a dielectric constant less than that of the substrate, the present invention reduces the influence on the charge movement in the active layer, and by providing the second auxiliary layer with a smaller dielectric constant, and the second auxiliary layer includes a plurality of auxiliary portions arranged at intervals, the influence on the charge movement in the active layer can be further reduced.

[0073] The structure of the display panel provided by the embodiments of the present invention has been introduced in detail above. Specific examples are used in this article to elaborate on the principle and implementation manner of the present invention. The description of the above embodiments is only used to help understand the technical solution and its core idea of the present invention; those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A display panel, characterized in that, comprising: a substrate; a thin film transistor layer located on the substrate, the thin film transistor layer including a plurality of transistors; an auxiliary layer located between the substrate and the thin film transistor layer, the auxiliary layer including a first auxiliary layer and a second auxiliary layer at least on a side of the first auxiliary layer close to the substrate, the first auxiliary layer including a polarizing material, the second auxiliary layer including a plurality of auxiliary portions, and there being a gap between two adjacent auxiliary portions; wherein, the dielectric constant of the constituent material of the first auxiliary layer is less than the dielectric constant of the constituent material of the substrate and greater than the dielectric constant of the constituent material of the second auxiliary layer.

2. The display panel according to claim 1, characterized in that, the second auxiliary layer includes a conductive material.

3. The display panel according to claim 2, characterized in that, the light transmittance of the first auxiliary layer is greater than the light transmittance of the auxiliary portions.

4. The display panel according to claim 2 or 3, characterized in that, the first auxiliary layer includes amorphous silicon, and the second auxiliary layer includes a metal conductor.

5. The display panel according to claim 1, characterized in that, a plurality of the auxiliary portions are uniformly arranged on the substrate and are in direct contact with the surface of the substrate.

6. The display panel according to claim 5, characterized in that, the first auxiliary layer covers a plurality of the auxiliary portions and fills the gap between two adjacent auxiliary portions, and the first auxiliary layer is also in direct contact with the surface of the substrate.

7. The display panel according to claim 6, characterized in that, the thickness of the first auxiliary layer is less than or equal to 10 angstroms.

8. The display panel according to claim 6, characterized in that, one side of the auxiliary portion close to the first auxiliary layer includes at least one of a convex portion and a concave portion.

9. The display panel according to claim 6, characterized in that, a first distance from the surface of the first auxiliary layer corresponding to the auxiliary portion close to the thin film transistor layer to the surface of the substrate is greater than a second distance from the surface of the first auxiliary layer corresponding to the gap close to the thin film transistor layer to the surface of the substrate.

10. The display panel according to claim 1, characterized in that, the second auxiliary layer is also located on a side of the first auxiliary layer away from the substrate, a plurality of the auxiliary portions in the second auxiliary layer located on the side of the first auxiliary layer away from the substrate and a plurality of the auxiliary portions in the other second auxiliary layer located on the side of the first auxiliary layer close to the substrate correspond to each other one by one, and two corresponding auxiliary portions are disposed opposite to each other.

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