A throttle valve, a processing chamber, and a semiconductor processing apparatus

Abstract

This invention discloses a throttle valve, a processing chamber, and a semiconductor processing device, relating to the field of semiconductor technology. It is used to prevent reactant substances generated from the reaction between gas transported in the flow channel and gas in the processing chamber from condensing on the surface of the flow regulating component and the inner wall of the flow channel, thereby improving the service life of the throttle valve. The throttle valve is applied in a semiconductor processing device with a processing chamber. The throttle valve includes: a valve body, a flow regulating component, and a heating component. A flow channel for transporting gas to the processing chamber is formed within the valve body. The flow regulating component is rotatably disposed within the valve body for regulating the gas flow rate within the flow channel. The heating component includes a heating element disposed within the flow regulating component for heating the flow regulating component.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more particularly to a throttle valve, a processing chamber, and a semiconductor processing device. Background Technology

[0002] In semiconductor device manufacturing, wafers to be processed are typically placed in a processing chamber within a semiconductor processing device. Process gases are then introduced into the evacuated processing chamber via a throttling valve. Under the combined action of the process gases and the corresponding gases within the processing chamber, the wafers are processed.

[0003] However, during the process of supplying process gas into the processing chamber through the aforementioned throttle valve, the process gas reacts with the corresponding gas in the processing chamber. Furthermore, the reactants produced by this reaction condense on the surface of the throttle valve's blocking section and on the inner wall of the flow channel. These condensed reactants hinder the rotation of the blocking section within the flow channel, preventing it from adjusting the flow rate of the process gas. In other words, the throttle valve cannot achieve the target pressure within the processing chamber as preset, ultimately shortening the valve's service life. Summary of the Invention

[0004] The purpose of this invention is to provide a throttle valve, a processing chamber, and a semiconductor processing device to prevent the reactants generated by the reaction between the gas transported in the flow channel and the gas in the processing chamber from condensing on the surface of the flow regulating component and the inner wall of the flow channel, thereby improving the service life of the throttle valve.

[0005] To achieve the above objectives, the present invention provides a throttling valve applied in a semiconductor processing apparatus having a processing chamber, the throttling valve comprising:

[0006] The valve body has a flow channel for transmitting gas to the processing chamber.

[0007] A flow regulating component is rotatably mounted in the valve body for regulating the flow rate of gas in the flow channel;

[0008] The heating assembly includes a heating section disposed within the flow regulating assembly, the heating section being used to heat the flow regulating assembly.

[0009] Compared to existing technologies, the throttle valve provided by this invention has a flow channel within the valve body for transmitting gas to the processing chamber. Furthermore, a flow regulating component is rotatably disposed within the valve body. Within a certain angular range, the flow rate of gas within the flow channel varies depending on the rotation angle of the flow regulating component within the valve body. Therefore, during the operation of the semiconductor processing equipment, when gas is supplied to the processing chamber through the aforementioned flow channel, the flow rate within the flow channel can be adjusted by the flow regulating component, thereby achieving pressure adjustment within the processing chamber. In addition, the throttle valve provided by this invention also includes a heating component, which includes a heating part disposed within the flow regulating component. This heating part can heat the flow regulating component. At this time, the flow regulating component, having a certain temperature, can transfer heat to the gas and flow channel surrounding the flow regulating component, causing both to also have a certain temperature. In this case, even if the gas transported in the flow channel reacts with the corresponding gas in the processing chamber to produce reactive substances, the gas around the flow regulating component has a certain temperature, so the reactive substances will not condense on the surface of the flow regulating component or on the inner wall of the flow channel around the flow regulating component. This prevents the reactive substances from hindering the rotation of the flow regulating component in the flow channel, allowing the throttle valve to regulate the pressure in the processing chamber according to the preset scheme, thereby improving the service life of the throttle valve.

[0010] The present invention also provides a processing chamber, which includes the throttling valve provided by the above-described technical solution.

[0011] Compared with the prior art, the beneficial effects of the processing chamber provided by the present invention are the same as the beneficial effects of the throttle valve provided by the above-mentioned technical solutions, and will not be repeated here.

[0012] The present invention also provides a semiconductor processing apparatus, which includes the processing chamber provided by the above-described technical solution.

[0013] Compared with the prior art, the beneficial effects of the semiconductor processing device provided by the present invention are the same as those of the throttle valve provided by the above-mentioned technical solutions, and will not be repeated here. Attached Figure Description

[0014] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0015] Figure 1 A longitudinal sectional view of a throttle valve provided in the prior art at the location of the blocking part;

[0016] Figure 2An enlarged view of the structure of a throttle valve provided in the prior art, showing that the surface of the blocking part and the inner wall of the flow channel are covered with reactive substances;

[0017] Figure 3 This is a schematic diagram of the structure of a throttle valve provided in an embodiment of the present invention;

[0018] Figure 4 This is a longitudinal sectional view of the blocking part at the location of the heating wire, provided in an embodiment of the present invention.

[0019] Figure label:

[0020] 1 is the valve body, 2 is the flow channel, 3 is the flow regulating component, 4 is the rotating shaft, 5 is the blocking part, 6 is the heating wire, 7 is the power terminal, 8 is the connecting wire, 9 is the vacuum guide hole, 10 is the power supply part, 11 is the first control part, 12 is the pressure monitoring component, and 13 is the reactant. Detailed Implementation

[0021] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are merely illustrative and are not intended to limit the scope of the present disclosure. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0022] The accompanying drawings illustrate various structural schematics according to embodiments of the present disclosure. These drawings are not to scale, and some details have been enlarged for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the drawings, as well as their relative sizes and positional relationships, are merely exemplary and may deviate from reality due to manufacturing tolerances or technical limitations. Furthermore, those skilled in the art can design regions / layers with different shapes, sizes, and relative positions as needed.

[0023] In the context of this disclosure, when a layer / element is referred to as being "on top of" another layer / element, the layer / element may be directly on top of the other layer / element, or there may be an intermediate layer / element between them. Additionally, if a layer / element is "on top of" another layer / element in one orientation, then when the orientation is reversed, the layer / element may be "below" the other layer / element. To make the technical problems, technical solutions, and beneficial effects of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0024] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified. "Several" means one or more, unless otherwise explicitly specified.

[0025] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0026] In semiconductor device manufacturing, wafers to be processed are typically placed in the processing chamber of semiconductor processing equipment (e.g., chemical vapor deposition equipment). Process gases are then introduced into the evacuated processing chamber through a throttling valve. Under the combined action of the process gases and the corresponding gases within the processing chamber, the wafer is processed. During this process, the flow rate of the process gas can be adjusted by changing the rotation angle of the blocking part of the throttling valve within the flow channel. This allows a specific amount of process gas to be supplied to the processing chamber at predetermined time intervals, thereby ensuring that the pressure within the processing chamber equals the target pressure and increasing the processing rate.

[0027] However, during the process of supplying process gas into the processing chamber through the aforementioned throttling valve, the process gas often reacts with the corresponding gas within the processing chamber. (See also...) Figure 1 and Figure 2 Because the temperature inside the throttle valve is low, the reactant material 13 produced by the reaction between the process gas and the corresponding gas will condense on the surface of the blocking part 5 of the throttle valve and on the inner wall of the flow channel 2. Furthermore, when the throttle valve is closed, the distance between the edge of the blocking part 5 and the inner wall of the flow channel 2 is small. Therefore, when the reactant material 13 condensed on the inner wall of the flow channel 2 accumulates to a certain thickness, it will hinder the rotation of the blocking part 5 within the flow channel 2. At this time, the blocking part 5 cannot adjust the flow rate of the process gas within the flow channel 2, which in turn causes the throttle valve to fail to equalize the pressure in the processing chamber with the target pressure as preset, ultimately resulting in a shorter service life for the throttle valve.

[0028] To address the aforementioned technical problems, embodiments of the present invention provide a throttling valve, a processing chamber, and a semiconductor processing device. Specifically, the throttling valve provided in this embodiment includes a heating element within the flow regulating component. This heating element heats the flow regulating component, thereby preventing reactant substances generated from the reaction between the gas transported in the flow channel and the gas in the processing chamber from condensing on the surface of the flow regulating component and the inner wall of the flow channel, thus improving the service life of the throttling valve.

[0029] This invention provides a throttling valve. This throttling valve is applied in a semiconductor processing apparatus having a processing chamber. The semiconductor processing apparatus can be any type of semiconductor processing apparatus that requires the supply of gas to its processing chamber via the throttling valve. For example, the semiconductor processing apparatus can be a chemical vapor deposition apparatus.

[0030] See Figure 3 and Figure 4 The throttle valve includes a valve body 1, a flow regulating component 3, and a heating component. The valve body 1 has a flow channel 2 for transmitting gas to the processing chamber. The flow regulating component 3 is rotatably disposed within the valve body 1 and is used to regulate the flow rate of the gas within the flow channel 2. The heating component includes a heating element disposed within the flow regulating component 3 for heating the flow regulating component 3.

[0031] Specifically, the specific structure of the valve body, as well as the shape and specifications of the flow channel, can be set according to actual needs, and are not specifically limited here. For example, the inner contour of the flow channel can be a circular inner contour, a rectangular inner contour, or an isosceles triangular inner contour, etc.

[0032] For the flow regulating component, its position within the valve body along the axial direction of the flow channel can be configured according to actual needs, without specific limitations. For example, along the axial direction of the flow channel, the flow regulating component can be located in the central region of the valve body. Alternatively, along the axial direction of the flow channel, the flow regulating component can be located near the flow channel outlet, allowing the heating element to heat the component to a certain temperature. This enables the component to transfer heat to the gas surrounding the flow channel outlet, preventing the reactants generated from the reaction between the transmitted gas and the gas in the processing chamber from accumulating on the inner wall of the flow channel not surrounding the flow regulating component, thus further improving the service life of the throttle valve. Furthermore, the shape and specifications of the flow regulating component can be set with reference to the shape and specifications of the flow channel. When the shape and specifications of the flow regulating component match the shape and specifications of the flow channel, the outer contour of the flow regulating component can more closely fit the inner contour of the flow channel at the location of the flow regulating component, thereby better regulating the gas flow rate within the flow channel.

[0033] As for the heating component, the specific structure of the heating part and the specific location of the heating part within the flow regulation part can be set according to the actual application scenario, as long as it can be applied to the throttle valve provided in the embodiment of the present invention.

[0034] In practical applications, see Figure 3 and Figure 4 When gas is supplied to the processing chamber through the flow channel 2 within the valve body 1, the flow rate of the gas within the flow channel 2 can be adjusted by the flow regulating component 3. Specifically, within a certain rotation angle range, the flow rate of the gas within the flow channel 2 varies depending on the rotation angle of the flow regulating component 3 within the valve body 1. Based on this, since the pressure within the processing chamber varies due to the different flow rates of the gas supplied, the pressure within the processing chamber can be adjusted by regulating the rotation angle of the flow regulating component 3 within the valve body 1. Furthermore, while gas is supplied to the processing chamber through the flow channel 2, the corresponding gas within the processing chamber can flow into the flow channel 2 and react with the transported gas to produce reactive substances. The heating element located within the flow regulating component 3 can heat the flow regulating component 3. Furthermore, the flow regulating component 3, which has a certain temperature, can transfer heat to the gas and the flow channel 2 located around the flow regulating component 3, so that both of them also have a certain temperature. This prevents the aforementioned reactants from condensing on the surface of the flow regulating component 3 and on the inner wall of the flow channel 2 located around the flow regulating component 3 due to the low temperature around the flow regulating component 3, thus ensuring that the flow regulating component 3 can regulate the flow rate of the gas in the flow channel 2 according to the preset scheme while transmitting the gas.

[0035] As can be seen from the above, even if the gas transported in the flow channel reacts with the corresponding gas in the processing chamber to produce reactive substances, the gas around the flow regulating component has a certain temperature. Therefore, the reactive substances will not condense on the surface of the flow regulating component or on the inner wall of the flow channel around the flow regulating component. This prevents the reactive substances from hindering the rotation of the flow regulating component in the flow channel, allowing the throttle valve to regulate the pressure in the processing chamber according to the preset scheme, thereby improving the service life of the throttle valve.

[0036] In one example, see Figure 3 and Figure 4 The flow regulating assembly 3 includes a rotating shaft 4 and a blocking part 5 fixedly connected to the rotating shaft 4. The rotating shaft 4 extends through the valve body 1 along the radial direction of the flow channel 2. The blocking part 5 is located within the flow channel 2 and is symmetrical about the central axis of the rotating shaft 4. The blocking part 5 is capable of rotating within the flow channel 2 about the central axis of the rotating shaft 4 to regulate the flow rate of gas within the flow channel 2.

[0037] In practical applications, when gas is transferred into the processing chamber through the flow channel and the gas flow rate needs to be adjusted, the rotating shaft passing through the valve body can be rotated to drive the blocking part to rotate within the flow channel, thereby adjusting the rotation angle of the blocking part within the flow channel. Within a certain angle range (e.g., 0° to 90°), the blocking part can block different flow rates of gas depending on its rotation angle within the flow channel, thus achieving the adjustment of the gas flow rate within the flow channel. For example, when the rotation angle of the blocking part is 0°, the throttle valve is in the closed state, and the gas flow rate in the flow channel is minimal. When the rotation angle of the blocking part is 90°, the throttle valve is fully open, and the gas flow rate in the flow channel is maximum. Furthermore, the blocking part is symmetrical about the central axis of the rotating shaft, meaning that the dimensions of the blocking part on both sides of the central axis of the rotating shaft are equal. Based on this, when the blocking part rotates around the central axis of the rotating shaft, the edge areas of the blocking part on both sides of the central axis of the rotating shaft will not rigidly contact the inner wall of the flow channel, improving the working stability of the throttle valve. Meanwhile, the portions of the blocking part located on both sides of the central axis of the rotating shaft can adjust the gas flow rate within the flow channel to be the same, thereby allowing the gas in different regions of the flow channel to flow uniformly in the radial direction.

[0038] For example, along the radial direction of the flow channel, a first mounting hole and a second mounting hole communicating with the flow channel can be provided in the valve body. Furthermore, the first mounting hole and the second mounting hole are arranged opposite to each other. The rotating shaft can pass through the valve body sequentially through the first mounting hole, the flow channel, and the second mounting hole. Specifically, the shape and specifications of the rotating shaft can be set according to the actual application scenario, and are not specifically limited here. For example, the rotating shaft can be a cylindrical structure. Furthermore, along the length extension direction of the rotating shaft, the first end of the rotating shaft can be flush with the surface of the valve body. The second end of the rotating shaft can protrude from the second mounting hole to facilitate adjustment of the rotation angle of the blocking part within the flow channel. Of course, the second end of the rotating shaft can also be flush with the surface of the valve body. In addition, the portion of the rotating shaft located at the first mounting hole and the portion located at the second mounting hole can contact the first mounting hole and the second mounting hole respectively through a sealing element to prevent gas transmitted within the flow channel from flowing out through the first mounting hole and the second mounting hole, thereby improving the sealing performance of the throttle valve.

[0039] For the aforementioned blocking part, its shape and specifications can be set with reference to the shape and specifications of the longitudinal section of the flow channel, and are not specifically limited here. For example, the outer contour of the blocking part can have a gap with the inner contour of the flow channel located at the rotation axis. Alternatively, the outer contour of the blocking part can coincide with the inner contour of the flow channel located at the rotation axis. It is understood that when there is a gap between the outer contour of the blocking part and the inner contour of the flow channel located at the rotation axis, gas in the flow channel can flow through the gap when the rotation angle of the blocking part is 0°, meaning that even when the throttle valve is closed, some gas can still be transmitted to the processing chamber through the flow channel. However, when the outer contour of the blocking part coincides with the inner contour of the flow channel located at the rotation axis, gas cannot be transmitted to the processing chamber through the flow channel when the rotation angle of the blocking part is 0°. Based on this, the positional relationship between the outer contour of the blocking part and the inner contour of the flow channel located at the rotation axis, as well as the size of the gap, can be set according to the actual application scenario's requirement for gas flow rate in the flow channel when the throttle valve is closed. Furthermore, the shape of the outer contour of the blocking part can match the shape of the inner contour of the flow channel. For example, when the inner contour of the flow channel is a circular inner contour, a rectangular inner contour, or an isosceles triangular inner contour, the outer contour of the blocking part can be the corresponding circular outer contour, rectangular outer contour, or isosceles triangular outer contour.

[0040] For example, see Figure 3 and Figure 4 The aforementioned blocking part 5 may include a blocking plate and a sealing element sleeved on the blocking plate circumferentially. The blocking plate is fixedly connected to the rotating shaft 4. In this case, during the process of the blocking part 5 rotating within the flow channel 2 to achieve gas flow regulation, the blocking plate will not directly contact the inner wall of the flow channel 2, thereby preventing the gas from being unable to pass through the flow channel 2 to the processing chamber due to the need for the throttle valve to be closed, which would cause wear on the edge of the blocking plate and improve the service life of the blocking plate.

[0041] Specifically, the shape and specifications of the aforementioned baffle plate can be set with reference to the shape and specifications of the blocking part described above. Furthermore, the baffle plate can be fixedly connected to the rotating shaft by means of adhesive bonding, screws, etc. As for the aforementioned seal, the seal can be made of a relatively soft material with a certain degree of elasticity. For example, the seal can be a rubber sealing ring. The seal can be fixedly connected to the circumference of the baffle plate by means of adhesive bonding, screws, etc. Furthermore, the shape and specifications of the seal can be set according to the shape and specifications of the baffle plate. For example, the inner diameter of the seal can be equal to or slightly smaller than the outer diameter of the baffle plate. When the baffle plate is a cylindrical baffle plate, the seal is a circular sealing ring.

[0042] In one example, see Figure 3 and Figure 4The heating element includes a heating wire 6, a power terminal 7, and a connecting wire 8. The heating wire 6 is disposed within the blocking portion 5. The power terminal 7 is disposed at the connection between the blocking portion 5 and the rotating shaft 4, and is connected to the heating wire 6. The first end of the connecting wire 8 extends into the rotating shaft 4 and is connected to the power terminal 7.

[0043] In practical applications, the heating wire installed within the blocking section, after being connected to power via power terminals and connecting wires, converts electrical energy into heat energy. This converted heat energy is then transferred to the blocking section and the surrounding gas and flow channels via thermal conduction, bringing them to a certain temperature. Therefore, all other things being equal, the limited range of heat energy transfer by the heating wire within the blocking section affects the temperature of different areas of the blocking section during heating, and consequently, the temperature of the surrounding gas and flow channels. Thus, the position of the heating wire within the blocking section can be determined based on the actual application scenario and the required temperatures of the blocking section's various areas and the surrounding gas and flow channels. For example, the heating wire can be arranged in a ring or grid pattern within the blocking section to ensure uniform heating of all areas, preventing reactants from condensing on the surfaces of the blocking section's areas or on the inner walls of the flow channels surrounding those areas. Alternatively, the heating wire can also be arranged in a spiral or other similar shape within the blocking section.

[0044] In addition, see Figure 3 and Figure 4 Since the power terminal 7 is located at the connection between the blocking part 5 and the rotating shaft 4, the first end of the connecting wire 8 can be connected to the power terminal 7 at the connection between the blocking part 5 and the rotating shaft 4. Based on this, since the blocking part 5 rotates within the flow channel 2 around the central axis of the rotating shaft 4, the position of the power terminal 7 within the flow channel 2 will not change significantly due to the rotation of the blocking part 5 and the rotating shaft 4 during the rotation of the blocking part 5 driven by the rotating shaft 4. This prevents the connecting wire 8 from getting tangled on the rotating shaft 4, facilitating the rotation of the blocking part 5 within the flow channel 2. Specifically, the exact location of the power terminal 7 at the connection between the blocking part 5 and the rotating shaft 4 can be set according to the actual application scenario, and is not specifically limited here.

[0045] For example, see Figure 3 and Figure 4The power terminal 7 is located near the first end of the rotating shaft 4. A vacuum guide hole 9 is provided inside the first end of the rotating shaft 4. The central axis of the vacuum guide hole 9 coincides with the central axis of the rotating shaft 4. The connecting wire 8 passes through the vacuum guide hole 9 and connects to the power terminal 7. In this case, while the heating wire 6 is electrically connected to an external power source through the connecting wire 8, the vacuum state inside the first end of the rotating shaft 4 can be maintained, allowing the connecting wire 8 to have a certain amount of movement inside the first end of the rotating shaft 4, which facilitates the rotation of the blocking part 5 and the rotating shaft 4.

[0046] It should be noted that, in addition to heating the blocking part through the heating wire mentioned above, the blocking part can also be heated by any component with heating function, such as a metal heating plate, as long as it can be applied to the throttle valve provided in the embodiment of the present invention.

[0047] In one example, see Figure 3 and Figure 4 The heating assembly further includes a power supply unit 10 and a first control unit 11. The power supply unit 10 is connected to both the heating unit and the first control unit 11, and is used to heat the blocking part 5 under the control of the first control unit 11.

[0048] Specifically, the aforementioned first control unit can be any component with control functions, such as a tablet or computer, to control the heating of the blocking part by the heating unit.

[0049] For example, as described above, when the heating unit includes a heating wire, a power terminal, and a connecting wire, the power supply unit can be connected to the second end of the connecting wire, thereby providing DC or AC current to the heating wire through the connecting wire and the power terminal. Furthermore, the DC or AC current provided by the power supply unit to the heating wire does work by overcoming the resistance of the heating wire, thus converting electrical energy into heat energy. Based on this, given that the specifications and material of the heating wire are fixed, the resistance of the heating wire is constant, and the first control unit can determine the magnitude of the DC or AC current provided by the power supply unit to the heating wire required to heat the blocking part to the target temperature based on the resistance of the heating wire. In practical applications, after determining the magnitude of the DC or AC current corresponding to the target temperature, the first control unit can control the power supply unit to provide the aforementioned magnitude of DC or AC current to the heating wire, thereby achieving automated control of the heating wire heating the blocking part to the target temperature during the operation of the semiconductor processing equipment, thus improving heating efficiency.

[0050] For example, the heating assembly described above also includes a temperature sensor connected to the first control unit, which measures the current temperature of the blocking section. The first control unit controls the power supply unit according to the current temperature, so that the heating unit heats the blocking section to a target temperature. Specifically, the target temperature can be set according to actual needs, and is not specifically limited here.

[0051] In practical applications, the aforementioned temperature sensor can measure the current temperature of the blocking section in real time and send the measurement result to the first control unit in the form of an electrical signal. If the first control unit determines that the current temperature is lower than the target temperature, it controls the power supply unit to continue supplying DC or AC current to the heating wire until the first control unit determines, based on the electrical signal sent by the temperature sensor, that the current temperature is greater than or equal to the target temperature. At this point, the power supply unit stops supplying DC or AC current to the heating wire, thus maintaining the temperature of the blocking section equal to the target temperature while the gas is flowing through the channel. As can be seen from the above, compared to the first control unit controlling the DC or AC current supplied to the heating wire by the power supply unit according to a predetermined range, the first control unit controls the operating state of the power supply unit based on the relationship between the current temperature measured by the temperature sensor and the target temperature. This allows for adjustments to the heating state of the heating unit based on the actual heating conditions, thereby improving the practicality of the heating assembly.

[0052] In one example, see Figure 3 The aforementioned throttle valve also includes a pressure monitoring component 12 connected to the second end of the rotating shaft 4. This pressure monitoring component 12 is used to control the flow regulating component 3 to ensure that the pressure in the processing chamber is equal to the target pressure during the operation of the semiconductor processing equipment.

[0053] In practical applications, as mentioned earlier, within a certain angular range, different rotation angles of the flow regulating component within the valve body result in varying gas flow velocities within the flow channel, which in turn affects the pressure within the processing chamber. Therefore, while transmitting gas through the processing chamber, the rotation angle of the flow regulating component within the valve body can be controlled by a pressure monitoring component to maintain the pressure within the processing chamber equal to the target pressure. This achieves automated control of pressure regulation within the processing chamber, thereby improving the performance of the throttle valve. Furthermore, the magnitude of the aforementioned target pressure can be set according to the processing performed by the semiconductor processing equipment; no specific limitation is made here.

[0054] For example, the pressure monitoring component includes a drive unit, a pressure sensor, and a second control unit. The power output end of the drive unit is fixedly connected to the second end of a rotating shaft, and is used to drive the rotating shaft to adjust the rotation angle of the blocking part within the flow channel. The pressure sensor is used to measure the current pressure within the processing chamber. The second control unit is connected to both the drive unit and the pressure sensor, and is used to control the drive unit to drive the rotating shaft to rotate according to the current pressure, so that the pressure within the processing chamber equals the target pressure.

[0055] In practical applications, when the semiconductor processing equipment is in operation, the pressure sensor can measure the pressure inside the processing chamber in real time and send the measurement results to the second control unit via electrical signals. When the second control unit determines that the current pressure is less than the target pressure, it controls the drive unit to rotate the rotating shaft, thereby causing the blocking part to rotate within the flow channel. This further increases the rotation angle of the blocking part within the flow channel, increasing the gas flow rate. Based on this, as the gas flow rate inside the processing chamber increases, the pressure inside the processing chamber increases until the second control unit determines, based on the signal from the pressure sensor, that the current pressure is greater than or equal to the target pressure. Then, it controls the drive unit to rotate the rotating shaft in the opposite direction, reducing the rotation angle of the blocking part within the flow channel and closing the throttle valve. This maintains the pressure inside the processing chamber at the target pressure during semiconductor processing equipment operation.

[0056] Specifically, the aforementioned drive unit can be any component capable of outputting rotational driving force to the second end of the rotating shaft. For example, the drive unit can be a motor. The aforementioned second control unit can be any component with control functions, such as a tablet or computer, to implement a strategy for monitoring the pressure within the processing chamber.

[0057] This invention also provides a processing chamber, which includes the throttling valve provided in the above embodiments. Specifically, the processing chamber can be any semiconductor processing chamber that requires the delivery of process gas or reaction gas and the maintenance of a certain pressure. For example, the processing chamber can be a chamber for performing chemical vapor deposition.

[0058] Compared with the prior art, the beneficial effects of the processing chamber provided in the embodiments of the present invention are the same as the beneficial effects of the throttle valve provided in the above embodiments, and will not be repeated here.

[0059] This invention also provides a semiconductor processing apparatus, which includes the processing chamber provided in the above embodiments. Specifically, the semiconductor processing apparatus can be any type of semiconductor processing apparatus that requires the supply of gas to its processing chamber via a throttling valve. For example, the semiconductor processing apparatus can be a chemical vapor deposition apparatus.

[0060] Compared with the prior art, the beneficial effects of the semiconductor processing device provided in the embodiments of the present invention are the same as those of the throttle valve provided in the above embodiments, and will not be repeated here.

[0061] The above describes the embodiments of the present disclosure. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the present disclosure is defined by the appended claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art may make various substitutions and modifications, which are intended to fall within the scope of the present disclosure.

Claims

1. A throttle valve, characterized in that, The throttle valve, used in a semiconductor processing apparatus with a processing chamber, comprises: The valve body has a flow channel for transmitting gas to the processing chamber; A flow regulating assembly is rotatably disposed within the valve body for regulating the flow rate of the gas within a flow channel. The flow regulating assembly includes a rotating shaft and a blocking portion fixedly connected to the rotating shaft. The rotating shaft extends through the valve body radially along the flow channel. The blocking portion is located within the flow channel and is symmetrical about the central axis of the rotating shaft. The blocking portion is capable of rotating within the flow channel about the central axis of the rotating shaft to regulate the flow rate of the gas within the flow channel. A heating assembly includes a heating section disposed within a flow regulating assembly, the heating section being used to heat the flow regulating assembly; the heating section includes a heating wire, a power terminal, and a connecting wire; the heating wire is disposed within a blocking section; the power terminal is disposed at the connection between the blocking section and the rotating shaft, and the power terminal is connected to the heating wire; a first end of the connecting wire extends into the rotating shaft and is connected to the power terminal; the power terminal is located near the first end of the rotating shaft; a vacuum guide hole is formed in the first end of the rotating shaft, the central axis of the vacuum guide hole coincides with the central axis of the rotating shaft, and the connecting wire passes through the vacuum guide hole and is connected to the power terminal; the vacuum guide hole is used to maintain a vacuum state within the first end of the rotating shaft, allowing the connecting wire a certain amount of movement within the first end of the rotating shaft; A pressure monitoring component connected to the second end of the rotating shaft is used to control the flow regulation component so that the pressure in the processing chamber is equal to the target pressure during the operation of the semiconductor processing device. The pressure monitoring component includes: The driving unit has its power output end fixedly connected to the second end of the rotating shaft, and is used to drive the rotating shaft to adjust the rotation angle of the blocking part in the flow channel. A pressure sensor is used to measure the current pressure inside the processing chamber; The second control unit is connected to the drive unit and the pressure sensor respectively, and is used to control the drive unit to drive the rotating shaft to rotate according to the current pressure, so that the pressure in the processing chamber is equal to the target pressure.

2. The throttle valve according to claim 1, characterized in that, There is a gap between the outer contour of the blocking part and the inner contour of the flow channel located at the rotation axis; or, the outer contour of the blocking part coincides with the inner contour of the flow channel located at the rotation axis. The outer contour of the blocking part is a circular outer contour, a rectangular outer contour, or an isosceles triangular outer contour.

3. The throttle valve according to claim 1, characterized in that, The blocking part includes a blocking plate and a sealing element sleeved on the blocking plate circumferentially; the blocking plate is fixedly connected to the rotating shaft.

4. The throttle valve according to claim 1, characterized in that, The heating wires are distributed in a ring or grid pattern within the blocking section.

5. The throttle valve according to claim 1, characterized in that, The heating assembly further includes a power supply unit and a first control unit; the power supply unit is connected to the heating unit and the first control unit respectively, and is used to heat the blocking part under the control of the first control unit.

6. The throttle valve according to claim 5, characterized in that, The heating assembly further includes a temperature sensor connected to the first control unit, the temperature sensor being used to measure the current temperature of the blocking part; The first control unit is used to control the power supply unit according to the current temperature, so that the heating unit heats the temperature of the blocking part to the target temperature.

7. A processing chamber, characterized in that, The processing chamber includes the throttle valve as described in any one of claims 1 to 6.

8. A semiconductor processing apparatus, characterized in that, The semiconductor processing apparatus includes the processing chamber as described in claim 7.

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