Phased array antenna with a superstructure for improving angular coverage

Abstract

The disclosed structures and methods relate to an antenna system for transmitting and receiving wireless signals in different directions. An antenna for transmitting electromagnetic (EM) waves includes a phased array and a superstructure. The phased array has radiating elements for radiating the EM waves. The superstructure is located at a phased array distance from the phased array to receive the EM waves at a first angle and transmit the EM waves at a second angle, the second angle being greater than the first angle. The superstructure includes three impedance layers arranged parallel to each other, and each impedance layer includes a plurality of metallized elements. Each metallized element has a first dipole and a pair of first capacitive arms located at each end of the first dipole and substantially perpendicular to the first dipole.

Description

Technical Field

[0001] The present invention generally relates to the field of wireless communication, and more particularly to antennas. Background Art

[0002] To support wide bandwidth and high throughput data rates, 5G telecommunications systems use millimeter wave spectra with frequencies above 30 gigahertz (GHz). At these frequencies, line-of-sight propagation predominates, which requires the development of point-to-point data links.

[0003] To improve the propagation of wireless signals in point-to-point data links, a scannable phased array can be used for a base station (BS) and a user equipment (UE). A transceiver with a scannable phased array can have many elements, such as a 16×16 element scannable phased array, and is capable of providing the wide beam scanning function, high gain, and narrow beam width required to maintain a robust data link with a mobile UE. However, a scannable phased array with so many elements is not only costly but also known to increase power consumption.

[0004] Using a relatively thick dielectric lens can extend the scanning range of a phased array, and the shape of the dielectric lens can be a hemispherical dome. Such a dielectric dome is bulky, relatively thick, and has a complex three-dimensional shape. In addition, the enhancement of the scanning range obtained using the dielectric dome is accompanied by an attenuation of directivity, some of which is attributed to the reflection at the dielectric / air interface. Summary of the Invention

[0005] An object of the present invention is to provide an antenna for transmitting electromagnetic (EM) waves. The antenna includes a metasurface lens structure placed close to a conventional phased array.

[0006] The metasurface lens structure as described herein is used to extend the scanning range of a conventional phased array. For example, if a conventional phased array has low cost and simplified hardware (e.g., through sub-arrays) such that it is used to radiate within a first scanning range (e.g., -15 degrees to 15 degrees), the metasurface lens structure as described herein is used to increase the scanning range of the antenna to a second scanning range greater than the first scanning range (e.g., -30 degrees to 30 degrees) while causing a minimum gain drop.

[0007] In accordance with this object, an aspect of the present invention provides an antenna for transmitting electromagnetic (EM) waves. The antenna includes: a phased array having a radiating element for radiating EM waves; and a superstructure located at a phased array distance from the phased array, receiving the EM waves at a first angle. The superstructure is configured to transmit the EM waves at a second angle, the second angle being greater than the first angle. The superstructure includes three impedance layers arranged parallel to each other, each impedance layer including a plurality of metallized elements, each metallized element having a first dipole and a pair of first capacitive arms positioned at each end of the first dipole and substantially perpendicular to the first dipole.

[0008] In some embodiments, the plurality of metallized elements are configured to provide a coupled electric dipole response and a magnetic dipole response.

[0009] In any of the above embodiments, the phased array is configured to radiate EM waves within a first scan range, and the superstructure is configured to transmit the EM waves within a second scan range, the second scan range being greater than the first scan range.

[0010] In any of the above embodiments, the three impedance layers may include a pair of side impedance layers and an intermediate impedance layer located between the side impedance layers. The first dipole located in the intermediate impedance layer may be displaced relative to the first dipole located in the side impedance layers. The first dipole located in the intermediate layer may be displaced relative to the first dipole located in the side impedance layers by approximately half the length of the first dipole located in the side impedance layers.

[0011] In any of the above embodiments, the superstructure may include at least one unit cell having a portion with three impedance layers, and the at least one unit cell may include at least a portion of one metallized element in each side impedance layer and an intermediate layer metallized element in the intermediate impedance layer. In the at least one unit cell, at least one of the intermediate layer metallized elements located in the intermediate impedance layer may have a different size from the size of the metallized elements located in the side impedance layers. The metallized elements located in the side impedance layers of the at least one unit cell may have different sizes.

[0012] In any of the above embodiments, each metallization element in the side impedance layer may further include: a second dipole positioned substantially perpendicular to and passing through the first dipole, and a pair of second capacitive arms positioned at each end of the second dipole and substantially perpendicular to the second dipole. The intermediate impedance layer may further include a central element positioned between the first capacitive arms of adjacent metallization elements in the intermediate impedance layer. The metallization element in the intermediate impedance layer may further include: a third dipole positioned substantially perpendicular to the first dipole in the intermediate impedance layer, and a pair of third capacitive arms positioned at each end of the third dipole and substantially perpendicular to the third dipole.

[0013] According to an additional aspect of the present invention, a method for manufacturing an antenna for transmitting EM waves is provided. The method includes determining a phased array distance; determining superstructure parameters of a unit cell of the superstructure; determining geometric parameters of a metallization element of the unit cell of the superstructure based on the superstructure parameters; placing the superstructure at the phased array distance from the phased array, the superstructure having three impedance layers including metallization elements having geometric parameters.

[0014] In some embodiments, the phased array distance may be determined based on the number of radiating elements of the phased array and the desired directivity attenuation of the antenna. The superstructure parameters of the unit cell of the superstructure may be determined based on the operating frequency of the phased array. The superstructure parameters of the unit cell of the superstructure may be determined based on the desired ratio of the scanning range of the antenna to the scanning range of the phased array.

[0015] Implementations of the present invention each have at least one of the above objects and / or aspects, but not necessarily all. It should be understood that some aspects of the present invention resulting from attempting to achieve the above objects may not satisfy this object and / or may satisfy other objects not specifically stated herein.

[0016] Additional and / or alternative features, aspects, and advantages of embodiments of the present invention will become apparent from the following description, drawings, and appended claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In conjunction with the accompanying drawings, further features and advantages of the present invention will become apparent from the following detailed description.

[0018] Figure 1 A side view of an antenna according to various embodiments of the present invention is shown.

[0019] Figure 2 A perspective view of a superstructure according to various embodiments of the present invention is shown.

[0020] Figure 3A perspective view of a portion of a superstructure having three unit cells according to various embodiments of the present invention is shown.

[0021] Figure 4 A perspective view of another portion of a superstructure having alternative unit cells according to various embodiments of the present invention is shown.

[0022] Figure 5 The phase as a function of the x - coordinate along the superstructure according to various embodiments of the present invention is shown.

[0023] Figure 6A The simulated behavior of the out - of - plane electric field when refracted from a superstructure having unit cells according to various embodiments of the present invention is shown starting from Figure 3 A magnified view of region A of

[0024] Figure 6B is shown. Figure 6A is shown.

[0025] Figure 7 The refraction directivity patterns for various incident first angles of EM waves of a superstructure having unit cells simulated according to various embodiments of the present invention are shown. Figure 3 The refraction second angle as a function of the incident first angle in the simulation shown is shown.

[0026] Figure 8 is shown as Figure 7 The flowchart of a method for manufacturing an antenna according to various embodiments of the present invention is shown.

[0027] Figure 9 It should be understood that in all the drawings and the corresponding descriptions, the same features are identified by the same reference numerals. Additionally, it should also be understood that the drawings and the subsequent descriptions are for illustrative purposes only, and such disclosures do not limit the scope of the claims.

[0028] DETAILED DESCRIPTION DETAILED DESCRIPTION

[0029] The present invention aims to address at least some of the deficiencies of the current implementations of antennas.

[0030] The techniques described herein can be embodied in various different electronic devices (EDs) including base stations (BS), user equipment (UE), etc.

[0031] Electromagnetic (EM) waves that propagate within an antenna and are radiated by the antenna can be in the radio frequency (RF) range and are referred to herein as RF waves. In some embodiments, the RF waves can be in the millimeter wave range. For example, the frequency of the RF waves can be between approximately 30 GHz and approximately 300 GHz. In some other embodiments, the RF waves can be in the microwave range. For example, the frequency of the RF waves can be between approximately 1 GHz and approximately 30 GHz.

[0032] As used herein, the term "about" or "substantially" means a variation of + / - 10% relative to the nominal value. It should be understood that the given values provided herein always include such variation whether or not specifically mentioned.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

[0034] In various embodiments, the antenna as described herein can be formed by appropriate features of a multi-substrate printed circuit board (PCB), such as features formed by etching conductive substrates, vias, etc. Such a PCB can be implemented in a suitably compact manner to be included in a wireless communication device such as a mobile communication terminal and is suitable for cost-effective mass production.

[0035] Now referring to the drawings, Figure 1 A side view of an antenna 100 according to at least one non-limiting embodiment of the present invention is shown.

[0036] The antenna 100 includes a phased array 110 (also referred to herein as "phased array antenna 110") and a metasurface lens structure 120 (also referred to herein as "superstructure 120") located at a phased array distance 125 from the phased array 110. In the illustrated embodiment, the superstructure 120 is located in a plane positioned parallel to the phased array 110. In some embodiments, the phased array 110 can be located in a plane positioned non-parallel to the phased array 110.

[0037] The phased array 110 includes radiating elements 112 arranged in an array. In the illustrated embodiment, the phased array 110 is configured to radiate EM waves 115 at a first angle θ1. The superstructure 120 is configured to receive the radiation of the incident EM waves 115 at the first angle θ1 and transmit the refracted EM waves 116 at a second angle θ2. In at least one embodiment, the second angle θ2 is greater than the first angle θ1, and the second angle θ2 is used to increase the angular coverage of the EM waves. The antenna 100 is configured to operate (transmit and receive) EM waves at the second angle θ2.

[0038] The superstructure 120 is used to enhance the scanning range Δθ1 of the phased array 110 (referred to as the "first scanning range Δθ1"). Due to the superstructure 120, the phased array scanning range Δθ1 (also referred to as the "scanning range of the phased array") can be less than the total scanning range Δθ2 of the antenna 100 (referred to as the "second scanning range Δθ2" and the "scanning range of the antenna 100"). Compared with more complex phased arrays used to provide the same scanning range as the antenna 100 described herein, the phased array 110 of the antenna 100 can have a simplified feed network (e.g., with fewer connections, fewer phase shifters, and associated electronic components).

[0039] Figure 2 A perspective view of the superstructure 120 according to at least one non - limiting embodiment of the present invention is shown. The superstructure 120 includes at least three impedance layers arranged parallel to each other: a first impedance layer 131, a second impedance layer 132 (also referred to as the "intermediate impedance layer 132"), and a third impedance layer 133 (the first impedance layer 131 and the third impedance layer 133 are collectively referred to as the "side impedance layers 131, 133"). Each impedance layer 131, 132, 133 has metallization elements 140, and the metallization elements 140 can be arranged in rows 145, as Figure 2 shown.

[0040] In at least one embodiment, the impedance layers 131, 132, 133 are separated from each other by a first substrate 151 and a second substrate 152. The substrates 151, 152 can be made of a dielectric material, for example, a dielectric material with a relative dielectric constant between approximately 3 and approximately 12. In some embodiments, the substrates 151, 152 can be made of a dielectric with a relative dielectric constant of approximately 4. The substrates 151, 152 can be made of a PCB.

[0041] As Figure 2 shown, the superstructure 120 can be represented as a plurality of unit cells 205.

[0042] Figure 3 A perspective view of a portion 300 of the superstructure 120 having three unit cells 305a, 305b, 305c (collectively referred to as "unit cells 305") according to at least one non - limiting embodiment of the present invention is shown. Each unit cell in the unit cells 305 includes a first metallization element 340a in the first impedance layer 131, a portion of a second metallization element 340b in the second impedance layer 132, a portion of a third metallization element 340c, and a fourth metallization element 340d in the third impedance layer 133. The metallization elements 340a, 340b, 340c, 340d are collectively referred to as metallization elements 340 herein.

[0043] In Figure 1 and Figure 2In the illustrated embodiment, each metallization element 340 is configured with a dipole 345 (dipoles 345a, 345b, 345c, 345d shown respectively for metallization elements 340a, 340b, 340c, 340d) and a pair of capacitive arms 350 that are located at each end of the dipole 345 and positioned generally perpendicular to the dipole 345. The metallization element 340 can be made of a metallic material such as copper.

[0044] The dipoles 345a, 345b, 345c, 345d of the metallization elements 340a, 340b, 340c, 340d can respectively have different lengths. The two capacitive arms 350 of one metallization element 340 have generally equal lengths.

[0045] Two adjacent metallization elements 340, such as the second metallization element 340b and the third metallization element 340c, can have different dipole lengths 352b, 352c and different capacitive arm lengths 355b, 355c. The two adjacent capacitive arms 350 of a pair of adjacent metallization elements 340b, 340c can have different lengths and form a capacitance therebetween.

[0046] Each capacitive arm 350 is connected to the corresponding dipole 345 generally at the midpoint of the capacitive arm 350. Thus, each capacitive arm 350 has two branches 351a, 351b that have generally equal lengths and are located on opposite sides of the dipole 345, as Figure 3 shown.

[0047] The width 357 of the dipole 345 and the width 357 of the capacitive arm 350 can be generally equal. The size of the metallization element 340, such as the lengths and widths of the dipole 345 and the capacitive arm 350, can be determined using full-field simulation (also known as full-wave numerical simulation analysis) based on initial superstructure configuration parameters such as the frequency of the EM wave, the size of the phased array 110, the first scan range Δθ1, the desired second scan range Δθ2, the first angle θ1, and the second angle θ2, etc.

[0048] Figure 4 A perspective view of a portion 400 of a superstructure 120 having alternative unit cells 405a, 405b, 405c (collectively referred to herein as alternative unit cells 405) according to at least one non-limiting embodiment of the present invention is shown.

[0049] In such an alternative unit cell 405, the alternative metallization element 440a in the first impedance layer 131 and the alternative metallization element 440b in the third impedance layer 133 have structures similar to each other.

[0050] The alternative metallization element 440 includes a first dipole 445 and two capacitive arms 450 positioned substantially perpendicular to the first dipole 445. In addition to the first dipole 445 and the capacitive arms 450, the alternative metallization element 440 has a second dipole 446 positioned substantially perpendicular to the first dipole 445. A second pair of capacitive arms 451 is positioned substantially perpendicular to the second dipole 446.

[0051] The second (intermediate) impedance layer 132 located between the first impedance layer 131 and the third impedance layer 133 of the alternative unit cell 405 includes a central element 460 and portions of four intermediate layer metallization elements 440c. Each intermediate layer metallization element 440c has an intermediate layer dipole 470 and corresponding capacitive arms 450. As Figure 4 shown, the central element 460 is surrounded by the capacitive arms 450 of four adjacent intermediate layer metallization elements 440c.

[0052] The widths 457 of the dipoles 445, 456, 470 and the capacitive arm lengths 450, 451 can be substantially equal to each other and can be determined according to the full-field simulation described below. The alternative metallization element 440 and the central element 460 can be made of a metallic material such as copper.

[0053] The central element 460 contributes to the coupling of the aligned intermediate layer dipoles 470. The dimensions of the central element 460 and the dimensions of the metallization elements 440a, 440b, 440c can also be determined using full-field simulation based on initial superstructure configuration parameters such as the frequency of the EM wave, the size of the phased array 110, the first scan range Δθ1, the desired second scan range Δθ2, the first angle θ1 and the second angle θ2, etc.

[0054] Refer to Figures 2 to 4 , the thickness 155 of the substrate 151 and the thickness 156 of the substrate 152 of the superstructure 120 can be one-tenth of the wavelength of the EM wave 115 radiated by the phased array 110, respectively. For example, the thickness 155 of the substrate 151 and the thickness 156 of the substrate 152 can be between approximately 0.25 mm and approximately 5 mm.

[0055] Refer to Figure 3 , in some embodiments, the dipoles 345 of the three impedance layers 131, 132, 133 of one unit cell 305 can be located in the same imaginary plane positioned substantially perpendicular to the impedance layers 131, 132, 133. Similarly, refer to Figure 4, in some embodiments, the dipoles 445 of the alternative metallization elements 440a in the first impedance layer 131 of a unit cell 405 and the dipoles 445 of the alternative metallization elements 440b in the third impedance layer 133 of a unit cell 405 may be positioned in a hypothetical plane perpendicular to the impedance layers 131, 132, 133.

[0056] Reference Figure 1 , the phased array distance 125 may depend on the operating frequency (wavelength) of the phased array 110 and the size of the phased array 110 (e.g., the number of radiating elements 112 and the distance between the radiating elements 112). In some embodiments, the value of the phased array distance 125 may be between several wavelengths and dozens of wavelengths of the EM wave 115 radiated by the phased array 110. The phased array distance 125 may be determined according to the size of the phased array 110 of the antenna 100 and according to the desired directivity attenuation acceptable in the operation of the antenna 100.

[0057] In the construction of the superstructure 120, the first impedance layer 131 may be attached to the first substrate 151, and the third impedance layer 133 may be attached to the second substrate 152. The second impedance layer 132 may be attached to the first substrate 151 or the second substrate 152. Then, the first substrate 151 and the second substrate 152 to which the impedance layers 131, 132, 133 are attached may be attached to each other with a material suitable for attaching the materials for the first 151 and the second substrates 152. In some embodiments, the first substrate 151 and the second substrate 152 may be glued with epoxy resin. In some embodiments, the first substrate 151 and the second substrate 152 to which the impedance layers 131, 132, 133 are attached may be cured in an oven.

[0058] In some embodiments, the superstructure 120 may have more than three impedance layers, and the impedance layer pairs of such a superstructure 120 may be separated by substrates. When determining the sizes of the unit cells 205, 305, 405 and the metallization elements 340, 440, the superstructure 120 with more than three impedance layers has greater degrees of freedom in numerical simulations. In addition, more impedance layers may support increasing or otherwise controlling the bandwidth of the EM wave.

[0059] In some embodiments, PCB manufacturing techniques may support embedding control elements, such as switches or varactors, in the superstructure 120 to improve the function and performance of the antenna 100. The surface of the superstructure 120 may remain flat, thus reducing the need to manufacture 3D-shaped structures.

[0060] When scanning the beam of the EM wave radiated by the phased array 110, i.e., as the first angle θ1 changes, the superstructure 120 as described herein may remain reflection-free, thereby reducing losses and improving the overall efficiency.

[0061] In some embodiments, the superstructure 120 may be in the form of a radome on the phased array 110.

[0062] The parameters of the unit cells 305, 405, such as the dipole lengths 352, 452 and the capacitive arm lengths 355, 455 of the metallization elements 340, 440, can be determined using the unit cell simulation models described below.

[0063] Referring to Figure 1 , general boundary conditions can be provided for the superstructure 120 between the incident field of the incident EM wave 115 and the transmitted field of the transmitted EM wave 116. The equivalence principle of electromagnetics states that surface currents and surface magnetic currents contribute to the transition between the incident field and the transmitted field. These currents must be formed on the superstructure 120 by the incident field and the transmitted field.

[0064] Referring again to Figure 1 , in the illustrated embodiment, it is assumed that the superstructure 120 lies in the y = 0 plane and does not vary in the z direction. It is assumed that the incident electric field and the transmitted electric field have only non-zero z components, i.e., only transverse electric (TE) polarization is considered.

[0065] Then, the bianisotropic sheet transition condition (BSTC) at the superstructure 120 can be characterized as follows:

[0066]

[0067]

[0068] where Z is the impedance of the superstructure, Y is the admittance of the superstructure, and K is the magnetoelectric coupling coefficient. The coefficients Z, Y, and K are also referred to herein as "the superstructure parameters Z, Y, and K".

[0069] In equations (1)-(2), E z and E' z are the incident tangential electric field and the transmitted tangential electric field, respectively; H x and H' x are the incident tangential magnetic field and the transmitted tangential magnetic field, respectively.

[0070] The surface characterization coefficients K, Y, Z in the BSTC equations (1)-(2) are also functions of the x coordinate along the surface. For the sake of brevity, this dependence is omitted in equations (1)-(2). It should be noted that the transmitted side of the superstructure 120 can be represented by the plane y = 0 + , and the incident side of the superstructure 120 can be represented by y = 0 - .

[0071] The BSTC equations (1)-(2) can be obtained by combining the traditional electromagnetic boundary conditions with a generalized form of Ohm's law that relates the average tangential electric and magnetic fields on the surface to the surface current. For the surface, the traditional Ohm's law states that the average tangential electric field on the surface is equal to the surface impedance times the surface current. Another law relates the average tangential magnetic field to the magnetic current through the surface admittance and supports magnetoelectric coupling. Magnetoelectric coupling enables magnetic current excitation by applying an electric field and current excitation by applying a magnetic field.

[0072] For the superstructure 120 to be passive and lossless, the incident and transmitted fields E z 、H′ z 、H x 、H′ x need to satisfy Maxwell's equations and the local power conservation condition at the superstructure 120. To satisfy the local power conservation condition at each location of the superstructure 120, the actual power flow entering the superstructure 120 on one side of the superstructure 120 needs to be equal to the actual power flow on the other side of the superstructure 120. Using the y-component of the Poynting vector , the local power conservation can be expressed as:

[0073]

[0074] where H* is the complex conjugate of the H field, and the x-dependence is omitted for brevity.

[0075] If it is assumed that the fields on both sides of the superstructure 120 satisfy equation (3), then the values of the superstructure parameters Z, Y, and K can be determined, which will satisfy equations (1) and (2).

[0076] The superstructure 120 has the structure of a bianisotropic Huygens metasurface. To achieve reflectionless operation, the superstructure 120 includes the metallization elements 140, 340, 440 discussed above, which are used to provide electrical and magnetic responses, and these two types of responses are also coupled (i.e., "bianisotropic").

[0077] As Figures 2 to 4 shown, it is assumed that the superstructure 120 consists of unit cells 205, 305, 405, and each unit cell 205, 305, 405 acts as an individual scatterer. The superstructure parameters Z, Y, and K can be determined first for each unit cell 205, 305, 405. Then, the parameters of the unit cells 205, 305, 405, such as the length of the dipole and the distance between the impedance layers 131, 132, 133, can be determined from the superstructure parameters Z, Y, and K.

[0078] The superstructure 120 with superstructure parameters Z, Y, and K that satisfy equations (1)-(3) can be passive and lossless. The superstructure 120 is lossless when the loss experienced by the EM wave refracted from the superstructure 120 is zero or nearly zero. The superstructure 120 is passive when it does not contribute any added EM energy. In some embodiments, the superstructure 120 is passive and lossless when the superstructure parameters Z and Y have imaginary values and the superstructure parameter K is a real number.

[0079] According to traditional transmission line theory, the unit cells 205, 305, 405 can act as a three-stub tuning network. When the tangential fields are known, the parameters of the unit cells 205, 305, 405 that provide the desired values of the superstructure parameters Z, Y, and K can be determined. The tangential fields E′ z , H′ x can be determined according to the desired ratio of the second angle θ2 to the first angle θ1 of the superstructure 120, i.e., θ2 / θ1, as described below.

[0080] To simulate the operation of the antenna 100, it is assumed that the incident field 115 is transmitted through a phased array 110 including sixteen (16) uniformly excited radiating elements 112 to the superstructure 120. The spacing between the elements is half of the wavelength λ, where the wavelength λ is the free space wavelength (measured in meters) corresponding to the operating frequency of the antenna 100. The phased array radiating elements 112 are assumed to be infinite current lines extending in the z direction, thus enabling a two-dimensional treatment of the problem.

[0081] The beam of the incident EM wave 115 is restricted to a first scan range Δθ1, where the degrees from the broadside are θ1 = ±15°. It is desired that the superstructure 120 increases the scan range Δθ1 of the phased array 110 to a second scan range Δθ2, where θ2 = ±30°. Thus, the simulated embodiment of the superstructure 120 is used to double the scan range Δθ1 of the phased array 110.

[0082] In the simulated embodiment, the operating frequency is 10 GHz and the phased array distance 125 is 40λ = 1.2 m. This phased array distance 125 of 40λ is selected to ensure that the superstructure 120 is as far as possible from the phased array 110 with available computing resources.

[0083] In some embodiments, when an object is placed at the focal point located at the focal length f = -40λ, the superstructure 120 can double the first scan range Δθ1.

[0084] In the simulation, it can be assumed that the electric and magnetic fields E′ + on the transmission side of the superstructure 120 (y = 0 z , H′ xIs the same as the field generated by an infinite current line at the focus of the superstructure 120 located at y = f = -40λ. Using the geometry described above, the transmitted electric and magnetic fields E′ z and H′ x can be written as:

[0085]

[0086]

[0087] where is the Hankel function of the second kind of order 0, is the Hankel function of the second kind of order 1.

[0088] In equations (4)-(5), f is the focal length of the superstructure 120 (measured in meters), k is the wave number in free space (measured in radians / meter), ω is the angular frequency of the radiation (measured in radians / second), ∈ is the permittivity of free space (measured in farads / meter), j is x is the x-coordinate along the superstructure 120 (measured in meters). The wave number k is equal to k = 2π / λ.

[0089] In at least one embodiment, to preserve the actual power flow across the superstructure 120, the incident fields E z and H x can be determined as:

[0090]

[0091]

[0092] where η is the impedance of free space, approximately equal to ohms.

[0093] The incident fields (6)-(7) make the phase of the electric field along the surface of the superstructure 120 constant, and the real part of the normal component of the Poynting vector is equal on both sides of the superstructure 120, such that

[0094] As discussed above, the tangential incident fields E z and H x and the transmitted fields E′ z and H′ x Solving equations (1)-(3), the superstructure parameters Z, Y, and K can be determined.

[0095] Although the superstructure parameters Z, Y, and K can be determined for a specific incident field and transmitted field (the so-called "assumed fields"), the superstructure 120 still refracts many different beams. In addition, the beams transmitted by the phased array 110 may be quite different from the assumed fields on the incident side of the superstructure 120. Therefore, it can be expected that the superstructure 120 with the superstructure parameters Z, Y, and K determined according to the assumed fields will operate as desired in a lossless and almost reflectionless manner. However, the results of the full-field simulation illustrate that when the EM wave 115 passes through the superstructure 120 with the superstructure parameters Z, Y, and K determined according to the assumed fields, the loss and reflection of the EM wave 115 are negligible.

[0096] Referring again to Figures 1 to 4 , the asymmetric impedance layers 131, 132, 133 of the unit cells 205, 305, 405 provide coupled electric dipole responses and magnetic dipole responses. This coupling of the electric dipole response and the magnetic dipole response improves the performance of the superstructure 120 by reducing reflections. Asymmetry of the impedance layers 131, 132, 133 can be achieved when the metallization elements 340, 440 in the same unit cells 305, 405 located in different impedance layers 131, 132, 133 have different sizes and / or are shifted relative to each other.

[0097] Referring to Figure 3 , in some embodiments, the first metallization element 340a and the fourth metallization element 340d have different lengths 355a, 355d, respectively, resulting in asymmetry of the impedance layers 131, 133. Similarly, the capacitive arms 350 of different lengths of the first metallization element 340a and the fourth metallization element 340d can provide asymmetry for the first impedance layer 131 and the third impedance layer 133.

[0098] In addition, the dipole 345b of the second metallization element 340b and the dipole 345c of the third metallization element 340c located in the second (middle) impedance layer 132 can be shifted relative to the dipole 345a of the first metallization element 340a located in the first impedance layer 131 and / or the dipole 345d of the fourth metallization element 340d located in the third impedance layer 133. This shift of the second metallization element 340b and the third metallization element 340c can be approximately half the length of the dipole located in one or both of the side impedance layers 131, 133 compared to the first metallization element 340a and / or the fourth metallization element 340d.

[0099] The dipoles 345b, 345c and / or the capacitive arms 350 of the metallization elements 340b, 340c located in the middle layer 132 may also have dimensions different from those of the dipoles 345a, 345d located in the side impedance layers 131, 133. In addition, the first metallization element 340a located in the first impedance layer 131 may have dimensions different from those of the fourth metallization element 340d located in the other side impedance layer (i.e., the third impedance layer 133).

[0100] Now referring to Figure 4 , the dipoles 445, 446 and the capacitive arms 450, 451 of the alternative metallization element 440a in the first impedance layer 131 and the alternative metallization element 440b in the third impedance layer 133 may have different dimensions, so as to provide asymmetry for the first layer 131 and the second layer 133, and result in the coupling of the electric dipole response and the magnetic dipole response.

[0101] The dimensions of the metallization elements 340, 440 of each unit cell 305, 405 and the asymmetry of the impedance layers 131, 132, 133 may be determined according to the superstructure parameters Z, Y and K. Since the superstructure parameters Z, Y and K of adjacent unit cells (such as unit cells 305a, 305b or 405a, 405b) may be different, the dimensions of the metallization elements 340, 440 of adjacent unit cells may also be different. In some embodiments, the dimensions of the dipoles 345, the capacitive arms 350 and / or the spacings 358 between adjacent capacitive arms 350 of adjacent unit cells (such as unit cells 305a, 305b) are different.

[0102] It should be noted that the superstructure parameters Z, Y and K may be determined according to the desired ratio of the refraction second angle θ2 to the incident first angle θ1 of the superstructure 120, the operating frequency of the phased array 110 and other characteristics of the phased array 110 (such as the number of radiation elements 112).

[0103] It should be noted that Figure 3 the unit cell 305 with the metallization element 340 shown in Figure 1 can operate in single polarization and two dimensions. Also referring to

[0104] In this configuration, the superstructure 120 and the beam transmitted by the phased array 110 may be assumed to be uniform and infinitely long in one dimension due to the configuration of the alternative metallization element 440 (for example, each alternative metallization element 440 is symmetric in two dimensions), and the positioning of the four middle layer dipoles 470 relative to the central element 460 in the middle impedance layer 132. Figure 4 the alternative unit cell 405 with the metallization element 440 shown in

[0105] A configuration with metallized element 140 instead of Figure 3 and Figure 4 The superstructure 120 depicted in can be used to provide desired values of the superstructure parameters Z, Y, and K. In some embodiments, such a superstructure 120 includes at least three impedance layers 131, 132, 133 that are arranged parallel to each other and have a plurality of metallized elements 140. Each metallized element 140 can have a dipole and a pair of capacitive arms located at each end of the dipole and substantially perpendicular to the dipole.

[0106] Figure 5 Shows the phase φ as a function of the x coordinate along the superstructure 120 according to at least one non - restrictive embodiment. At each point of the superstructure 120, the relationship between the incident first angle θ1 and the refracted second angle θ2 of the field depends on the phase slope φ. A function of the phase φ is selected such that the function is continuous and refracts an incident beam that falls on the superstructure 120 at 15 degrees with a 30 - degree refraction.

[0107] Figure 6A Shows the simulated behavior of the out - of - plane electric field when refracted from the superstructure 120 having a unit cell 305 according to at least one non - restrictive embodiment of the present invention. The out - of - plane electric field is simulated using full - wave finite - element analysis. The phased array 110 has 16 radiating elements 112. As described above, the superstructure 120 and the phased array 110 are separated by 40λ. The phased array 110 radiates a non - broadside beam at an angle θ1 = 15°, and the beam is refracted by the superstructure 120 at an angle θ2 = 30° from the broadside.

[0108] Figure 6A Shows that the interference ripples of the reflected field are almost non - existent, meaning that the performance is almost reflection - free. The simulation shows that the loss and reflection of the EM waves from the superstructure 120 are negligible. At other incident angles θ1, the reflection is still negligible. Figure 6B Shows Figure 6A An enlarged view of region A of.

[0109] Figure 7 Shows the refraction directivity patterns of the EM waves 115 at various incident angles θ1 of the superstructure 120 having a unit cell 305 simulated according to at least one non - restrictive embodiment of the present invention. The phased array 110 has 1×16 elements and has a first scan range of Δθ1, where the angle from the broadside is θ1 = ±15°. Curves 700, 705, 710, 715 respectively show the directivity of the EM waves refracted from the superstructure 120 at incident first angles θ1 = 0, 5, 10, 15 degrees. Curves 755, 760, 770 respectively show the directivity of the EM waves refracted from the superstructure 120 at incident first angles θ1 = - 5, - 10, - 15 degrees.

[0110] Figure 7 It is shown that in the simulation embodiment, the directional peaks at various incident first angles θ1 have similar values. Also refer to Figure 1 , when the incident first angle θ1 of the incident EM wave 115 is θ1 = 10 degrees, the directional peak 710 of the refracted EM wave 116 is located at the second angle θ2 = 20 degrees. Thus, in the simulation embodiment, the antenna 100 is used to radiate the refracted EM wave 116 at a second angle θ2 that is twice as large as the first angle θ1.

[0111] If the operating angle of the phased array 110 is the first angle θ1, the superstructure 120 can double this angle, and the antenna 100 can operate (radiate and receive EM waves) at the second angle θ2 = 2*θ1.

[0112] Figure 8 It is shown as Figure 7 a function of the incident first angle θ1 in the simulation. The curve 801 shows the simulated refracted second angle θ2 of the EM wave 116, while the curve 802 corresponds to the desired behavior of the refracted second angle θ2 of the EM wave 116 as a function of the incident angle θ1 of the EM wave 115. Figure 8 It is shown that the second angle θ2 is twice as large as the incident first angle θ1.

[0113] Figure 9 A flowchart of a method 900 for manufacturing the antenna 100 according to at least one non - limiting embodiment of the present invention is shown. At step 910, the phased - array distance 125 is determined, for example, according to the size of the phased array 110 and the desired directional attenuation of the antenna 100. The size of the phased array 110 can be determined according to the number of radiation elements 112 of the phased array 110.

[0114] At step 920, the superstructure parameters Z, Y, and K are determined for each unit cell 205, 305, 405 of the superstructure 120. As described above, the superstructure parameters Z, Y, and K can be determined using equations (1) - (7). The superstructure parameters Z, Y, and K of the unit cells 205, 305, 405 of the superstructure 120 can be determined according to the operating frequency of the phased array 110 and the desired ratio of the second scan range Δθ2 of the antenna 100 to the first scan range Δθ1 of the phased array 110.

[0115] At step 930, geometric parameters of the metallization elements 140, 340, 440, 460, 470 of each unit cell 205, 305, 405 are determined based on the superstructure parameters Z, Y, and K. At step 940, the superstructure 120 can be fabricated using the geometric parameters of the metallization elements 140, 340, 440 determined at step 930. In at least one embodiment, the superstructure 120 has at least three impedance layers 131, 132, 133, and each layer includes the metallization elements 140, 340, 440 having the geometric parameters determined at step 930. At step 950, the superstructure 120 is placed at a phased array distance 125 from the phased array 110 to form the antenna 100.

[0116] Although the invention has been described with reference to specific features and embodiments of the invention, it is apparent that various modifications and combinations can be made without departing from the scope of the invention. Accordingly, the specification and drawings are to be regarded simply as an illustration of the invention as defined by the appended claims and are contemplated to cover any and all modifications, variations, combinations, or equivalents falling within the scope of the invention.

Claims

1. An antenna, characterized in that, For transmitting electromagnetic EM waves, the antenna comprises: A phased array having radiating elements for radiating the EM waves; A superstructure for extending the scanning range of a conventional phased array, the superstructure being located at a certain distance from the phased array, receiving the EM waves at a first angle, the superstructure being for transmitting the EM waves at a second angle greater than the first angle, the superstructure comprising: Three impedance layers arranged parallel to each other, each impedance layer comprising a plurality of metallized elements, each metallized element having a first dipole and a pair of first capacitive arms positioned at each end of the first dipole and perpendicular to the first dipole.

2. The antenna according to claim 1, wherein The plurality of metallized elements are for providing a coupled electric dipole response and a magnetic dipole response.

3. The antenna according to claim 1 or 2, characterized in that The phased array is for radiating the EM waves within a first scanning range, and the superstructure is for transmitting the EM waves within a second scanning range greater than the first scanning range.

4. The antenna according to claim 1 or 2, characterized in that, The three impedance layers include a pair of side impedance layers and an intermediate impedance layer between the side impedance layers, and the first dipole in the intermediate impedance layer is shifted relative to the first dipole in the side impedance layers.

5. The antenna according to claim 3, characterized in that, The three impedance layers include a pair of side impedance layers and an intermediate impedance layer between the side impedance layers, and the first dipole in the intermediate impedance layer is shifted relative to the first dipole in the side impedance layers.

6. The antenna according to claim 4, characterized in that, The first dipole in the intermediate impedance layer is shifted relative to the first dipole in the side impedance layers by half the length of the first dipole in the side impedance layers.

7. The antenna according to claim 5, characterized in that, The first dipole in the intermediate impedance layer is shifted relative to the first dipole in the side impedance layers by half the length of the first dipole in the side impedance layers.

8. The antenna according to claim 1 or 2, characterized in that The three impedance layers include a pair of side impedance layers and an intermediate impedance layer between the side impedance layers, The superstructure includes at least one unit cell having a portion of the three impedance layers, The at least one unit cell includes one metallized element in each of the side impedance layers and at least a portion of the intermediate layer metallized element in the intermediate impedance layer.

9. The antenna according to claim 3, characterized in that The three impedance layers include a pair of side impedance layers and an intermediate impedance layer between the side impedance layers, the superstructure includes at least one unit cell having a portion of the three impedance layers, The at least one unit cell includes one metallized element in each of the side impedance layers and at least a portion of the intermediate layer metallized element in the intermediate impedance layer.

10. The antenna according to claim 4, characterized in that The superstructure includes at least one unit cell having a portion of the three impedance layers, The at least one unit cell includes one metallized element in each of the side impedance layers and at least a portion of the intermediate layer metallized element in the intermediate impedance layer.

11. The antenna according to claim 5, wherein the superstructure includes at least one unit cell having a portion with the three impedance layers, the at least one unit cell includes one metallization element in each of the side impedance layers and at least a portion of the intermediate layer metallization element in the intermediate impedance layer.

12. The antenna according to claim 6, wherein the superstructure includes at least one unit cell having a portion with the three impedance layers, the at least one unit cell includes one metallization element in each of the side impedance layers and at least a portion of the intermediate layer metallization element in the intermediate impedance layer.

13. The antenna according to claim 7, wherein the superstructure includes at least one unit cell having a portion with the three impedance layers, the at least one unit cell includes one metallization element in each of the side impedance layers and at least a portion of the intermediate layer metallization element in the intermediate impedance layer.

14. The antenna according to claim 8, wherein In at least one unit cell, at least one of the intermediate layer metallization elements in the intermediate impedance layer has a size different from the size of the metallization element in the side impedance layer.

15. The antenna according to claim 9, characterized in that, In at least one unit cell, at least one of the intermediate layer metallization elements in the intermediate impedance layer has a size different from the size of the metallization element in the side impedance layer.

16. The antenna according to claim 10, wherein In at least one unit cell, at least one of the intermediate layer metallization elements in the intermediate impedance layer has a size different from the size of the metallization element in the side impedance layer.

17. The antenna according to claim 11, characterized in that, In at least one unit cell, at least one of the intermediate layer metallization elements in the intermediate impedance layer has a size different from the size of the metallization element in the side impedance layer.

18. The antenna according to claim 12, characterized in that, In at least one unit cell, at least one of the intermediate layer metallization elements in the intermediate impedance layer has a size different from the size of the metallization element in the side impedance layer.

19. The antenna according to claim 13, wherein In at least one unit cell, at least one of the intermediate layer metallization elements in the intermediate impedance layer has a size different from the size of the metallization element in the side impedance layer.

20. The antenna according to claim 8, wherein The metallization elements in the side impedance layers of the at least one unit cell have different sizes.

21. The antenna according to claim 9, wherein The metallization elements in the side impedance layers of the at least one unit cell have different sizes.

22. The antenna according to claim 10, wherein The metallization elements in the side impedance layers of the at least one unit cell have different sizes.

23. The antenna according to claim 11, characterized in that, The metallization elements in the side impedance layers of the at least one unit cell have different sizes.

24. The antenna according to claim 12, characterized in that, The metallization elements in the side impedance layers of the at least one unit cell have different sizes.

25. The antenna according to claim 13, characterized in that, The metallization elements in the side impedance layers of the at least one unit cell have different sizes.

26. The antenna according to claim 14, characterized in that, The metallization elements in the side impedance layers of the at least one unit cell have different sizes.

27. The antenna according to claim 15, characterized in that, The metallization elements in the side impedance layers of the at least one unit cell have different sizes.

28. The antenna according to claim 16, wherein The metallization elements in the side impedance layers of the at least one unit cell have different sizes.

29. The antenna according to claim 17, wherein The metallization elements in the side impedance layers of the at least one unit cell have different sizes.

30. The antenna according to claim 18, characterized in that, The metallization elements in the side impedance layers of the at least one unit cell have different sizes.

31. The antenna according to claim 19, wherein The metallization elements in the side impedance layers of the at least one unit cell have different sizes.

32. The antenna according to claim 1 or 2, characterized in that, The three impedance layers include a pair of side impedance layers and an intermediate impedance layer located between the side impedance layers. Each metallization element in the side impedance layers includes: A second dipole, which is positioned perpendicular to and passes through the first dipole. A pair of second capacitive arms, which are positioned at each end of the second dipole and perpendicular to the second dipole.

33. The antenna according to claim 3, characterized in that, The three impedance layers include a pair of side impedance layers and an intermediate impedance layer located between the side impedance layers. Each metallization element in the side impedance layers further includes: A second dipole, which is positioned perpendicular to and passes through the first dipole. A pair of second capacitive arms, which are positioned at each end of the second dipole and perpendicular to the second dipole.

34. The antenna according to claim 4, characterized in that, Each metallization element in the side impedance layers further includes: A second dipole, which is positioned perpendicular to and passes through the first dipole. A pair of second capacitive arms, which are positioned at each end of the second dipole and perpendicular to the second dipole.

35. The antenna according to claim 5, characterized in that Each metallization element in the side impedance layers further includes: A second dipole, which is positioned perpendicular to and passes through the first dipole. A pair of second capacitive arms, which are positioned at each end of the second dipole and perpendicular to the second dipole.

36. The antenna according to claim 6, wherein Each metallization element in the side impedance layers further includes: A second dipole, which is positioned perpendicular to and passes through the first dipole. A pair of second capacitive arms, which are positioned at each end of the second dipole and perpendicular to the second dipole.

37. The antenna according to claim 7, characterized in that, Each metallization element in the side impedance layers further includes: A second dipole, which is positioned perpendicular to and passes through the first dipole. A pair of second capacitive arms, which are positioned at each end of the second dipole and perpendicular to the second dipole.

38. The antenna according to claim 8, wherein Each metallization element in the side impedance layers further includes: A second dipole, which is positioned perpendicular to and passes through the first dipole. A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

39. The antenna according to claim 9, characterized in that, Each metallized element located in the side impedance layer further includes: A second dipole, the second dipole being positioned perpendicular to the first dipole and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

40. The antenna according to claim 10, wherein Each metallized element located in the side impedance layer further includes: A second dipole, the second dipole being positioned perpendicular to the first dipole and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

41. The antenna according to claim 11, characterized in that, Each metallized element located in the side impedance layer further includes: A second dipole, the second dipole being positioned perpendicular to the first dipole and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

42. The antenna according to claim 12, characterized in that, Each metallized element located in the side impedance layer further includes: A second dipole, the second dipole being positioned perpendicular to the first dipole and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

43. The antenna according to claim 13, wherein Each metallized element located in the side impedance layer further includes: A second dipole, the second dipole being positioned perpendicular to the first dipole and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

44. The antenna according to claim 14, wherein, Each metallized element located in the side impedance layer further includes: A second dipole, the second dipole being positioned perpendicular to the first dipole and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

45. The antenna according to claim 15, characterized in that, Each metallized element located in the side impedance layer further includes: A second dipole, the second dipole being positioned perpendicular to the first dipole and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

46. The antenna according to claim 16, wherein Each metallized element located in the side impedance layer further includes: A second dipole, the second dipole being positioned perpendicular to the first dipole and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

47. The antenna according to claim 17, characterized in that, Each metallized element located in the side impedance layer further includes: A second dipole, the second dipole being positioned perpendicular to the first dipole and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

48. The antenna according to claim 18, wherein Each metallization element located in the side impedance layer further comprises: A second dipole, the second dipole being positioned perpendicular to and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

49. The antenna according to claim 19, characterized in that, Each metallization element located in the side impedance layer further comprises: A second dipole, the second dipole being positioned perpendicular to and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

50. The antenna according to claim 20, characterized in that, Each metallization element located in the side impedance layer further comprises: A second dipole, the second dipole being positioned perpendicular to and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

51. The antenna according to claim 21, characterized in that, Each metallization element located in the side impedance layer further comprises: A second dipole, the second dipole being positioned perpendicular to and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

52. The antenna according to claim 22, wherein Each metallization element located in the side impedance layer further comprises: A second dipole, the second dipole being positioned perpendicular to and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

53. The antenna according to claim 23, wherein Each metallization element located in the side impedance layer further comprises: A second dipole, the second dipole being positioned perpendicular to and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

54. The antenna according to claim 24, wherein Each metallization element located in the side impedance layer further comprises: A second dipole, the second dipole being positioned perpendicular to and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

55. The antenna according to claim 25, wherein Each metallization element located in the side impedance layer further comprises: A second dipole, the second dipole being positioned perpendicular to and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

56. The antenna according to claim 26, wherein Each metallization element located in the side impedance layer further comprises: A second dipole, the second dipole being positioned perpendicular to and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

57. The antenna according to claim 27, wherein Each metallization element located in the side impedance layer further comprises: A second dipole, the second dipole being positioned perpendicular to and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

58. The antenna according to claim 28, wherein, Each metallization element located in the side impedance layer further comprises: A second dipole, the second dipole being positioned perpendicular to the first dipole and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

59. The antenna according to claim 29, characterized in that, Each metallization element located in the side impedance layer further comprises: A second dipole, the second dipole being positioned perpendicular to the first dipole and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

60. The antenna according to claim 30, characterized in that, Each metallization element located in the side impedance layer further comprises: A second dipole, the second dipole being positioned perpendicular to the first dipole and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

61. The antenna according to claim 31, wherein Each metallization element located in the side impedance layer further comprises: A second dipole, the second dipole being positioned perpendicular to the first dipole and passing through the first dipole, A pair of second capacitive arms, the pair of second capacitive arms being positioned at each end of the second dipole and perpendicular to the second dipole.

62. The antenna according to claim 20, wherein, The intermediate impedance layer further comprises a central element, the central element being positioned between the first capacitive arms of adjacent metallization elements located in the intermediate impedance layer.

63. The antenna according to claim 50, characterized in that, The intermediate impedance layer further comprises a central element, the central element being positioned between the first capacitive arms of adjacent metallization elements located in the intermediate impedance layer.

64. The antenna according to claim 60, wherein, The intermediate impedance layer further comprises a central element, the central element being positioned between the first capacitive arms of adjacent metallization elements located in the intermediate impedance layer.

65. The antenna according to claim 61, wherein, The intermediate impedance layer further comprises a central element, the central element being positioned between the first capacitive arms of adjacent metallization elements located in the intermediate impedance layer.

66. The antenna according to claim 20, characterized in that, The metallization element located in the intermediate impedance layer further comprises: a third dipole positioned perpendicular to the first dipole located in the intermediate impedance layer, and a pair of third capacitive arms positioned at each end of the third dipole and perpendicular to the third dipole.

67. The antenna according to claim 50, wherein The metallization element located in the intermediate impedance layer further comprises: a third dipole positioned perpendicular to the first dipole located in the intermediate impedance layer, and a pair of third capacitive arms positioned at each end of the third dipole and perpendicular to the third dipole.

68. The antenna according to claim 62, characterized in that, The metallization element located in the intermediate impedance layer further comprises: a third dipole positioned perpendicular to the first dipole located in the intermediate impedance layer, and a pair of third capacitive arms positioned at each end of the third dipole and perpendicular to the third dipole.

69. The antenna according to claim 63, wherein, The metallization element in the intermediate impedance layer further includes: a third dipole positioned perpendicular to the first dipole in the intermediate impedance layer, and a pair of third capacitive arms positioned at each end of the third dipole and perpendicular to the third dipole.

70. A method for manufacturing an antenna for transmitting electromagnetic EM waves, characterized in that, The method includes: Determining the phased array distance; Determining the superstructure parameters of a unit cell of a superstructure for extending the scanning range of a conventional phased array; Based on the superstructure parameters, determining the geometric parameters of the metallization element of the unit cell of the superstructure; Placing the superstructure at a certain distance from the phased array, the superstructure having three impedance layers, the impedance layers including the metallization elements having the geometric parameters, the three impedance layers being arranged parallel to each other, each impedance layer including a plurality of metallization elements, each metallization element having a first dipole and a pair of first capacitive arms, the pair of first capacitive arms being positioned at each end of the first dipole and perpendicular to the first dipole.

71. The method according to claim 70, wherein The determining of the certain distance of the phased array is based on the number of radiation elements of the phased array and the desired directivity attenuation of the antenna.

72. The method according to claim 70 or 71, characterized in that, The superstructure parameters of the unit cell of the superstructure are determined based on the operating frequency of the phased array.

73. The method according to claim 70 or 71, characterized in that, The superstructure parameters of the unit cell of the superstructure are determined based on the desired ratio of the scanning range of the antenna to the scanning range of the phased array.

74. The method according to claim 72, wherein The superstructure parameters of the unit cell of the superstructure are determined based on the desired ratio of the scanning range of the antenna to the scanning range of the phased array.

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