A semiconductor device and a control system for the semiconductor device

Abstract

This application discloses a semiconductor device and a control system for the semiconductor device. The semiconductor device includes a cavity, a main pipeline, and at least one group of secondary pipelines. One end of the main pipeline is connected to the cavity and is used to extract gas from the cavity to create a vacuum within the cavity. Each group of secondary pipelines includes at least one secondary pipeline. Each secondary pipeline includes an inlet section and an outlet section respectively connected to the main pipeline, and an intermediate section connecting the inlet section and the outlet section. The inlet section and the outlet section are arranged along a first direction, which is a direction along the main pipeline from away from the cavity towards the cavity. A first angle between the inlet section and the first direction is an acute angle; a second angle between the outlet section and the first direction is an acute angle. This device can prevent external gas backflow and improve the efficiency of vacuuming.

Description

Technical Field

[0001] This application relates to the field of integrated circuit manufacturing technology, and in particular to a semiconductor device and a control system for the semiconductor device. Background Technology

[0002] Semiconductor manufacturing is a planar manufacturing process that combines photolithography, etching, deposition, and ion implantation. It requires the formation of numerous complex devices of various types on a single substrate and their interconnection to achieve complete electrical performance. Deviations in any of these processes will cause the circuit's performance parameters to deviate from the design values. As the feature size and integration density of very large-scale integrated circuits continue to shrink, higher demands are placed on the control of each process step and the accuracy of the process results. For example, in wafer fabrication, vacuuming is often required to prevent air contamination of the wafer.

[0003] Currently, for most machines that require vacuuming, vacuuming is achieved by connecting the inside and outside of the cavity through a pipeline. Once the vacuum pump is turned off, external gas often flows back into the cavity, which adversely affects the quality of the wafer, resulting in low vacuuming efficiency.

[0004] Therefore, it is necessary to propose a new method to overcome the aforementioned problems in the semiconductor device fabrication process. Summary of the Invention

[0005] This disclosure provides a semiconductor device and a control system for the semiconductor device, which prevents external gas backflow and improves the efficiency of vacuuming during the vacuuming process of the semiconductor device manufacturing process when the cavity is evacuated.

[0006] In a first aspect, this disclosure provides a semiconductor device, comprising:

[0007] cavity;

[0008] A main pipeline, one end of which is connected to the cavity, is used to extract gas from the cavity to create a vacuum within the cavity;

[0009] At least one secondary pipeline group, each of the secondary pipeline groups including at least one secondary pipeline; the secondary pipeline includes an air inlet section and an air outlet section respectively connected to the main pipeline, and an intermediate section connecting the air inlet section and the air outlet section; the air inlet section and the air outlet section are arranged along a first direction, the first direction being a direction along the main pipeline from the direction away from the cavity to the direction close to the cavity;

[0010] The first angle between the air intake section and the first direction is an acute angle; the second angle between the air outlet section and the first direction is an acute angle.

[0011] The semiconductor device provided in this embodiment includes a cavity, a main pipeline, and at least one group of secondary pipelines. One end of the main pipeline is connected to the cavity and is used to extract gas from the cavity to create a vacuum within the cavity. Each group of secondary pipelines includes at least one secondary pipeline. Each secondary pipeline includes an inlet section and an outlet section respectively connected to the main pipeline, and an intermediate section connecting the inlet section and the outlet section. The inlet section and the outlet section are arranged along a first direction, which is a direction along the main pipeline from away from the cavity to closer to the cavity. A first angle between the inlet section and the first direction is an acute angle. A second angle between the outlet section and the first direction is an acute angle. Compared to related technologies that use a main pipeline connecting the inside and outside of the housing for vacuuming, this semiconductor device extracts a branch gas flow from the backflow gas in the main pipeline when gas backflow occurs in the main pipeline. The branch gas flow is then converted into a buffer gas flow that hinders backflow through the middle section of the secondary pipeline. The buffer gas flow is then blown back into the main pipeline through the outlet section, preventing gas backflow into the cavity. This prevents external gas backflow and improves the efficiency of vacuuming.

[0012] In one alternative embodiment, the semiconductor device includes a first sub-pipe group and a second sub-pipe group, the first sub-pipe group and the second sub-pipe group being disposed in different planes.

[0013] The aforementioned device includes a first auxiliary pipeline group and a second auxiliary pipeline group, which are arranged on different planes. The auxiliary pipelines in the auxiliary pipeline groups on different planes blow buffered airflows towards the main pipeline in different directions, which can more effectively prevent gas backflow into the cavity, prevent external gas backflow, and further improve the efficiency of vacuuming.

[0014] In one optional embodiment, the first auxiliary pipeline group includes a first auxiliary pipeline and a second auxiliary pipeline; the first auxiliary pipeline and the second auxiliary pipeline are symmetrically arranged about the central axis of the main pipeline.

[0015] The aforementioned device includes a first auxiliary pipeline group comprising a first auxiliary pipeline and a second auxiliary pipeline; the first auxiliary pipeline and the second auxiliary pipeline are symmetrically arranged about the central axis of the main pipeline. In this device, the buffered airflow blown into the main pipeline by the two auxiliary pipelines in the same auxiliary pipeline group has different directions, which can more effectively prevent gas backflow into the cavity, prevent external gas backflow, and further improve the efficiency of vacuuming.

[0016] In one alternative implementation, the first secondary pipeline group and the second secondary pipeline group are arranged orthogonally.

[0017] In the aforementioned device, the first and second auxiliary pipeline groups are orthogonally arranged. This device includes the first and second auxiliary pipeline groups arranged orthogonally. The direction of the buffered airflow blown from the auxiliary pipelines of these two auxiliary pipeline groups to the main pipeline lies within two orthogonal planes, resulting in better obstruction of gas backflow into the cavity, preventing external gas backflow, and further improving the efficiency of vacuuming.

[0018] In one optional embodiment, the second auxiliary pipeline group includes a third auxiliary pipeline and a fourth auxiliary pipeline; the third auxiliary pipeline and the fourth auxiliary pipeline are symmetrically arranged about the central axis of the main pipeline; the first auxiliary pipeline and the third auxiliary pipeline are orthogonally arranged.

[0019] The aforementioned device includes a second auxiliary pipeline group comprising a third and a fourth auxiliary pipeline; the third and fourth auxiliary pipelines are symmetrically arranged about the central axis of the main pipeline; the first auxiliary pipeline is orthogonally arranged about the third auxiliary pipeline. This device, including orthogonal auxiliary pipeline groups, with each auxiliary pipeline group comprising two auxiliary pipelines symmetrically arranged about the central axis of the main pipeline, further enhances the resistance to gas backflow into the cavity, effectively preventing external gas backflow and improving vacuuming efficiency.

[0020] In one alternative implementation, the first included angle is less than or equal to the second included angle.

[0021] In the aforementioned device, the first included angle is less than or equal to the second included angle. This design allows gas to more easily enter the secondary pipe (where the angle with the first direction is smaller) when flowing along the main pipe in the first direction, resulting in a relatively larger volume of gas entering the secondary pipe. The second included angle is larger than the first, making it less likely for the gas entering the secondary pipe to flow out, thus making gas backflow more difficult (resistance greater). This more effectively prevents external gas backflow and improves vacuuming efficiency.

[0022] In one optional implementation, there are multiple secondary pipeline groups, and the multiple secondary pipeline groups are arranged at equal intervals along the central axis of the main pipeline at a first distance threshold.

[0023] The aforementioned device comprises multiple secondary pipeline groups, which are equally spaced along the central axis of the main pipeline at a first distance threshold. This device, through the multiple secondary pipeline groups equally spaced along the central axis of the main pipeline at the first distance threshold, generates multiple buffer airflows that blow into the main pipeline, thus enhancing its ability to prevent gas backflow into the cavity and further preventing external gas backflow, thereby improving the efficiency of vacuuming.

[0024] In one alternative implementation, the first distance threshold is 3 to 6 times the diameter of the main pipeline.

[0025] In one alternative implementation, the first distance threshold is 15 to 30 cm.

[0026] In one alternative implementation, the diameter of the air intake section is greater than or equal to the diameter of the air outlet section.

[0027] In the aforementioned device, the diameter of the inlet section is greater than or equal to the diameter of the outlet section. This device makes it easier for gas to enter the secondary pipe through the inlet section (due to the larger diameter of the inlet section) when flowing in the main pipe along the first direction, resulting in a relatively larger amount of gas entering the secondary pipe. Furthermore, the larger diameter of the inlet section compared to the outlet section makes it less likely for gas to flow out of the secondary pipe, thus making gas backflow more difficult (increasing resistance). This more effectively prevents external gas backflow and improves the efficiency of vacuuming.

[0028] In one alternative embodiment, the diameter of the air intake section is 50% to 80% of the diameter of the main pipeline.

[0029] In the aforementioned device, the diameter of the air inlet section is 50% to 80% of the diameter of the main pipeline. The larger diameter of the air inlet section allows for easier and more efficient flow of gas into the secondary pipeline along the main pipeline in the first direction. This results in a greater volume of gas entering the secondary pipeline, making it more difficult for gas to return to the cavity and more effectively preventing external gas backflow, thus improving the efficiency of vacuuming.

[0030] In one optional embodiment, a pressure sensor is provided in the cavity, and a main switch is provided in the main pipeline. The pressure sensor is signal-connected to the main switch and is used to control the opening and closing of the main switch.

[0031] The aforementioned device includes a pressure sensor within the cavity and a main switch in the main pipeline. The pressure sensor is signal-connected to the main switch to control its opening and closing. This device not only delivers buffered airflow to the main pipeline but also controls the opening and closing of the main pipeline based on the pressure sensor by controlling the opening and closing of the main switch. This more effectively prevents external gas backflow and improves vacuuming efficiency.

[0032] In a second aspect, this disclosure provides a control system for a semiconductor device, comprising:

[0033] Includes a processor and a semiconductor device; the semiconductor device includes a cavity, a main pipeline, and at least one group of secondary pipelines;

[0034] One end of the main pipeline is connected to the cavity;

[0035] Each of the secondary pipeline groups includes at least one secondary pipeline; the secondary pipeline includes an air inlet section and an air outlet section respectively connected to the main pipeline, and an intermediate section connecting the air inlet section and the air outlet section; the air inlet section and the air outlet section are arranged along a first direction, the first direction being a direction along the main pipeline from away from the cavity to closer to the cavity; a first angle between the air inlet section and the first direction is an acute angle; a second angle between the air outlet section and the first direction is an acute angle;

[0036] The processor is configured to extract gas from the cavity via the main pipeline to create a vacuum within the cavity.

[0037] In one alternative embodiment, the semiconductor device includes a first sub-pipe group and a second sub-pipe group, the first sub-pipe group and the second sub-pipe group being disposed in different planes.

[0038] In one optional embodiment, the first auxiliary pipeline group includes a first auxiliary pipeline and a second auxiliary pipeline; the first auxiliary pipeline and the second auxiliary pipeline are symmetrically arranged about the central axis of the main pipeline.

[0039] In one alternative implementation, the first secondary pipeline group and the second secondary pipeline group are arranged orthogonally.

[0040] In one optional embodiment, the second auxiliary pipeline group includes a third auxiliary pipeline and a fourth auxiliary pipeline; the third auxiliary pipeline and the fourth auxiliary pipeline are symmetrically arranged about the central axis of the main pipeline; the first auxiliary pipeline and the third auxiliary pipeline are orthogonally arranged.

[0041] In one alternative implementation, the first included angle is less than or equal to the second included angle.

[0042] In one optional implementation, there are multiple secondary pipeline groups, and the multiple secondary pipeline groups are arranged at equal intervals along the central axis of the main pipeline at a first distance threshold.

[0043] In one alternative implementation, the first distance threshold is 3 to 6 times the diameter of the main pipeline.

[0044] In one alternative implementation, the first distance threshold is 15 to 30 cm.

[0045] In one alternative implementation, the diameter of the air intake section is greater than or equal to the diameter of the air outlet section.

[0046] In one alternative embodiment, the diameter of the air intake section is 50% to 80% of the diameter of the main pipeline.

[0047] In one optional embodiment, a pressure sensor is provided in the cavity, and a main switch is provided in the main pipeline. The pressure sensor is signal-connected to the main switch and is used to control the opening and closing of the main switch.

[0048] The processor is specifically used to control the main switch to turn on and to extract gas from the cavity through the main pipeline to create a vacuum in the cavity;

[0049] The processor is also configured to turn off the main switch when the pressure measurement value of the pressure sensor is abnormal relative to a preset pressure threshold.

[0050] In one optional implementation, turning off the main switch when the pressure measurement value of the pressure sensor is abnormal relative to a preset pressure threshold includes:

[0051] When gas extraction from the cavity through the main pipeline is stopped, if the pressure measurement value of the pressure sensor is found to be higher than the pressure threshold, the main switch is turned off.

[0052] The technical effects of any implementation method in the second aspect can be found in the technical effects of the implementation method in the first aspect, and will not be repeated here. Attached Figure Description

[0053] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0054] Figure 1 This is a schematic diagram of the structure of a semiconductor device provided in an embodiment of the present disclosure;

[0055] Figure 2 A simplified top view of the main and secondary circuits of a semiconductor device provided in an embodiment of this disclosure;

[0056] Figure 3 A simplified front view of the main and secondary circuits of another semiconductor device provided in an embodiment of this disclosure;

[0057] Figure 4 A simplified top view of the main and secondary circuits of another semiconductor device provided in an embodiment of this disclosure;

[0058] Figure 5 A simplified front view of a main pipeline and secondary pipelines arranged at equal intervals in an embodiment of this disclosure;

[0059] Figure 6 A schematic diagram of a semiconductor device equipped with a pressure sensor and a main switch, provided for an embodiment of this disclosure;

[0060] Figure 7 This is a schematic diagram of the structure of a control system for a semiconductor device provided in an embodiment of the present disclosure;

[0061] Figure 8 This is a schematic diagram of the structure of a control system for a semiconductor device equipped with a pressure sensor and a main switch, provided as an embodiment of the present disclosure. Detailed Implementation

[0062] To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0063] In this disclosure, the term "exemplary" is used to mean "serving as an example, embodiment, or illustration." Any embodiment illustrated as "exemplary" is not necessarily to be construed as superior to or better than other embodiments.

[0064] The terms "first" and "second" used in this document are for descriptive purposes only and should not be construed as indicating relative importance or implying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature, and in the description of embodiments of this disclosure, unless otherwise stated, "multiple" means two or more.

[0065] The following explanations of some terms used in the embodiments of this disclosure are provided to facilitate understanding by those skilled in the art.

[0066] Semiconductor manufacturing is a planar manufacturing process that combines photolithography, etching, deposition, and ion implantation. It requires the formation of numerous complex devices of various types on a single substrate and their interconnection to achieve complete device performance. Deviations in any process step will cause the circuit's performance parameters to deviate from the design values. As the feature size of very large-scale integrated circuits (VLSI) continues to shrink and integration density increases, higher demands are placed on the control of each process step and the accuracy of the process results. For example, in wafer fabrication, vacuuming is often required to prevent air contamination of the wafer.

[0067] Currently, for most machines that require vacuuming, vacuuming is achieved by connecting the inside and outside of the cavity through a pipeline. Once the vacuum pump is turned off, the gas will quickly flow back into the cavity. Before the sensors on the cavity or pipeline can detect or react, the backflow has already occurred, thereby damaging the wafer and adversely affecting the quality. The efficiency of vacuuming is relatively low.

[0068] This disclosure provides a semiconductor device and a control system for the semiconductor device, solving the problem of low vacuuming efficiency caused by external gas backflow during the evacuation of a cavity in the semiconductor device manufacturing process of related technologies. The semiconductor device includes a cavity, a main pipeline, and at least one set of secondary pipelines. One end of the main pipeline is connected to the cavity and is used to extract gas from the cavity to create a vacuum within the cavity. Each set of secondary pipelines includes at least one secondary pipeline. Each secondary pipeline includes an inlet section and an outlet section respectively connected to the main pipeline, and an intermediate section connecting the inlet and outlet sections. The inlet and outlet sections are arranged along a first direction, which is a direction along the main pipeline from the direction away from the cavity towards the direction closer to the cavity. A first angle between the inlet section and the first direction is an acute angle; a second angle between the outlet section and the first direction is an acute angle. When gas backflow occurs in the main pipeline, this semiconductor device extracts a branch gas flow from the backflow gas in the main pipeline through the inlet section of the secondary pipeline. The branch gas flow is then converted into a buffer gas flow that hinders backflow through the middle section of the secondary pipeline. The buffer gas flow is then blown back into the main pipeline through the outlet section to prevent gas backflow into the cavity. This slows down the rate at which gas backflows into the cavity, thus preventing external gas backflow and improving the efficiency of vacuuming.

[0069] To further illustrate the technical solutions provided in the embodiments of this disclosure, the semiconductor devices provided in the embodiments of this disclosure will be further described below.

[0070] Figure 1 A schematic diagram of the structure of a semiconductor device provided in an embodiment of this disclosure is shown. Semiconductor device 10, such as... Figure 1 As shown, it includes:

[0071] Cavity 100;

[0072] Main pipe 200, one end of which is connected to cavity 100, is used to extract gas from cavity 100 to create a vacuum inside cavity 100.

[0073] At least one secondary pipeline group 300, each secondary pipeline group 300 includes at least one secondary pipeline 301; the secondary pipeline 301 includes an air inlet section 3011 and an air outlet section 3013 respectively connected to the main pipeline 200, and an intermediate section 3012 connecting the air inlet section 3011 and the air outlet section 3013; the air inlet section 3011 and the air outlet section 3013 are arranged along a first direction R, the first direction R being a direction along the main pipeline 200 from the direction away from the cavity 100 to the direction close to the cavity 100;

[0074] The first angle θ1 between the intake section 3011 and the first direction R is an acute angle; the second angle θ2 between the exhaust section 3013 and the first direction R is an acute angle.

[0075] In some embodiments of this disclosure, one end of the main pipeline is connected to the cavity 100 for extracting gas from the cavity, such as... Figure 1 As shown. It should be noted that in some other embodiments of this application, a plurality of branch pipes may be provided at one end of the main pipeline. These branch pipes at one end of the main pipeline are connected to the cavity 100 and are used to extract gas from the cavity.

[0076] The semiconductor device 10 provided in this embodiment includes a cavity 100, a main pipeline 200, and at least one secondary pipeline group 300. One end of the main pipeline 200 is connected to the cavity 100 and is used to extract gas from the cavity 100 to form a vacuum within the cavity 100. Each secondary pipeline group 300 includes at least one secondary pipeline 301. The secondary pipeline 301 includes an inlet section 3011 and an outlet section 3013 respectively connected to the main pipeline 200, and an intermediate section 3012 connecting the inlet section 3011 and the outlet section 3013. The inlet section 3011 and the outlet section 3013 are arranged along a first direction R, where the first direction R is a direction along the main pipeline 200 from a direction away from the cavity 100 to a direction closer to the cavity 100. A first angle θ1 between the inlet section 3011 and the first direction R is an acute angle. A second angle θ2 between the outlet section 3013 and the first direction R is an acute angle. Compared to related technologies that use a main pipeline connecting the inside and outside of the housing for vacuuming, this semiconductor device extracts a branch gas flow from the backflow gas in the main pipeline 200 when gas backflow occurs. This branch gas flow is then converted into a buffer gas flow that hinders backflow through the middle section of the secondary pipeline. The buffer gas flow is then blown back into the main pipeline through the outlet section, slowing down the backflow speed and preventing gas from flowing back into the cavity. This provides time for the pipeline to close, thereby preventing external gas backflow and improving the efficiency of vacuuming.

[0077] In one alternative embodiment, the semiconductor device includes a first sub-pipe group and a second sub-pipe group, the first sub-pipe group and the second sub-pipe group being disposed in different planes.

[0078] For example, Figure 2A top view of the main and secondary circuits of a semiconductor device according to an embodiment of this disclosure is shown. See also Figure 2 The semiconductor device 10 includes a first sub-pipe group 300A and a second sub-pipe group 300B, which are disposed on different planes. Figure 2 The front view of the first auxiliary pipeline group 300A in the middle and Figure 1 The secondary piping assembly 300 shown is the same. Figure 2 The main view of the main road 200' in the middle and Figure 1 The main road 200 shown is the same as that shown, by Figure 2 It can be seen that the plane Flat1 where the first auxiliary pipeline group 300A is located and the plane Flat2 where the second auxiliary pipeline group 300B is located have a certain included angle θ. ang The included angle θ ang It can be any angle value, for example, 30 degrees, 45 degrees or 60 degrees, etc.

[0079] The device of this embodiment includes a first auxiliary pipeline group and a second auxiliary pipeline group, which are arranged on different planes. The auxiliary pipelines in the auxiliary pipeline groups on different planes blow buffered airflows towards the main pipeline in different directions, which can more effectively prevent gas backflow into the cavity, prevent external gas backflow, and further improve the efficiency of vacuuming.

[0080] In one possible implementation, the first auxiliary pipeline group includes a first auxiliary pipeline and a second auxiliary pipeline; the first auxiliary pipeline and the second auxiliary pipeline are arranged symmetrically about the central axis of the main pipeline.

[0081] For example, such as Figure 3 As shown, the first auxiliary pipeline group 300A includes a first auxiliary pipeline 301A and a second auxiliary pipeline 302A; the first auxiliary pipeline 301A and the second auxiliary pipeline 302A are symmetrically arranged about the central axis of the main pipeline 200'.

[0082] The aforementioned equipment includes a first auxiliary pipeline group comprising a first auxiliary pipeline and a second auxiliary pipeline; the first and second auxiliary pipelines are symmetrically arranged about the central axis of the main pipeline. In this equipment, the buffered airflow blown into the main pipeline from the two auxiliary pipelines within the same auxiliary pipeline group has different directions, which can more effectively prevent gas backflow into the cavity, prevent external gas backflow, and further improve the efficiency of vacuuming.

[0083] In one alternative embodiment, the first and second auxiliary piping groups are arranged orthogonally.

[0084] For example, see Figure 2The semiconductor device 10 includes a first sub-pipe group 300A and a second sub-pipe group 300B, which are disposed on different planes. Figure 2 The front view of the first auxiliary pipeline group 300A in the middle and Figure 1 The secondary piping assembly 300 shown is the same. Figure 2 The main view of the main road 200' in the middle and Figure 1 The main road 200 shown is the same as the one in the diagram. Figure 2 The angle θ between plane Flat1, where the first auxiliary pipeline group 300A is located, and plane Flat2, where the second auxiliary pipeline group 300B is located. ang It can be set to a right angle, so that the first auxiliary pipeline group 300A and the second auxiliary pipeline group 300B are orthogonal.

[0085] The aforementioned equipment has a first and a second auxiliary pipeline group arranged orthogonally. This equipment includes a first and a second auxiliary pipeline group arranged orthogonally. The direction of the buffered airflow blown from the auxiliary pipelines of these two auxiliary pipeline groups to the main pipeline lies within two orthogonal planes, resulting in better obstruction of gas backflow into the cavity, preventing external gas backflow, and further improving the efficiency of vacuuming.

[0086] In one optional embodiment, the second auxiliary pipeline group includes a third auxiliary pipeline and a fourth auxiliary pipeline; the third auxiliary pipeline and the fourth auxiliary pipeline are symmetrically arranged about the central axis of the main pipeline; the first auxiliary pipeline and the third auxiliary pipeline are orthogonally arranged.

[0087] For example, see Figure 4 The second auxiliary pipeline group 300B includes a third auxiliary pipeline 301B and a fourth auxiliary pipeline 302B; the third auxiliary pipeline 301B and the fourth auxiliary pipeline 302B are symmetrically arranged about the central axis of the main pipeline 200'; the first auxiliary pipeline 301A and the third auxiliary pipeline 301B are orthogonally arranged.

[0088] The aforementioned equipment includes a second auxiliary pipeline group comprising a third and a fourth auxiliary pipeline; the third and fourth auxiliary pipelines are symmetrically arranged about the central axis of the main pipeline; the first and third auxiliary pipelines are orthogonally arranged. This equipment, including orthogonal auxiliary pipeline groups, with each auxiliary pipeline group containing two auxiliary pipelines symmetrically arranged about the central axis of the main pipeline, further enhances the resistance to gas backflow into the cavity, effectively preventing external gas backflow and improving vacuuming efficiency.

[0089] In one possible implementation, the first included angle is less than or equal to the second included angle.

[0090] For example, see Figure 1The first angle θ1 between the intake section 3011 and the first direction R is an acute angle; the second angle θ2 between the exhaust section 3013 and the first direction R is an acute angle, and the first angle θ1 is less than or equal to the second angle θ2.

[0091] In the aforementioned device, the first included angle is less than or equal to the second included angle. This design allows gas to more easily enter the secondary pipe (where the angle with the first direction is smaller) as it flows along the main pipe in the first direction, resulting in a relatively larger volume of gas entering the secondary pipe. The second included angle is larger than the first, making it more difficult for the gas entering the secondary pipe to flow out, thus making gas backflow more difficult (resistance greater). This more effectively prevents external gas backflow and improves vacuuming efficiency.

[0092] In one optional embodiment, there are multiple secondary pipeline groups, and the multiple secondary pipeline groups are arranged at equal intervals along the central axis of the main pipeline according to a first distance threshold.

[0093] For example, such as Figure 5 As shown, there are multiple secondary pipeline groups, namely 300A', 300B' and 300C', and the multiple secondary pipeline groups are set at equal intervals along the central axis of the main pipeline 200' according to the first distance threshold Length_1.

[0094] The aforementioned device comprises multiple secondary pipeline groups, which are equally spaced along the central axis of the main pipeline at a first distance threshold. This device, through these multiple secondary pipeline groups equally spaced along the central axis of the main pipeline at the first distance threshold, generates multiple buffer airflows that blow into the main pipeline, thus enhancing its ability to prevent gas backflow into the cavity. This further prevents external gas backflow and improves the efficiency of vacuuming.

[0095] In one alternative embodiment, the first distance threshold is 3 to 6 times the diameter of the main pipeline.

[0096] For example, the first distance threshold Length_1 is 3 to 6 times the diameter D_main of the main pipeline, wherein the first distance threshold Length_1 can be 20cm and the diameter D_main of the main pipeline can be 5cm.

[0097] In one alternative embodiment, the first distance threshold is 15–30 cm.

[0098] For example, the first distance threshold Length_1 can be 20cm, and its value is between 15cm and 30cm.

[0099] In one alternative embodiment, the diameter D_in of the intake section is greater than or equal to the diameter D_out of the exhaust section.

[0100] For example, the diameter D_in of the air intake section is 4cm and the diameter D_out of the air outlet section is 3cm.

[0101] In the aforementioned device, the diameter of the inlet section is greater than or equal to the diameter of the outlet section. This device makes it easier for gas to enter the secondary pipeline through the inlet section (due to the larger diameter of the inlet section) when flowing in the main pipeline in the first direction, resulting in a relatively larger amount of gas entering the secondary pipeline. Furthermore, the larger diameter of the inlet section compared to the outlet section makes it more difficult for gas to flow out of the secondary pipeline, thus making gas backflow more difficult (increasing resistance). This more effectively prevents external gas backflow and improves the efficiency of vacuuming.

[0102] In one alternative embodiment, the diameter D_in of the intake section is 50% to 80% of the diameter D_main of the main pipeline.

[0103] For example, the diameter D_in of the intake section is 80% of the diameter D_main of the main pipeline, wherein the diameter D_in of the intake section is 4cm and the diameter D_main of the main pipeline can be 5cm.

[0104] In the aforementioned equipment, the diameter of the air inlet section is 50% to 80% of the diameter of the main pipeline. This larger diameter of the air inlet section allows for easier and more efficient flow of gas into the secondary pipeline as it flows along the main pipeline in the first direction. This results in a greater volume of gas entering the secondary pipeline, making it more difficult for gas to return to the cavity and more effectively preventing external gas backflow, thus improving the efficiency of vacuuming.

[0105] In one optional embodiment, a pressure sensor is provided inside the cavity, and a main switch is provided in the main pipeline. The pressure sensor is signal-connected to the main switch to control the opening and closing of the main switch.

[0106] For example, such as Figure 6 As shown, a pressure sensor 601 is provided inside the cavity 100, and a main switch 602 is provided in the main pipeline 200. The pressure sensor 601 is connected to the main switch 602 for signal control of the opening and closing of the main switch 602.

[0107] For existing vacuum-equipped machines, vacuuming is achieved through a pipeline connecting the inside and outside of the cavity. Once the vacuum pump is shut off, external gas often flows back into the cavity. This backflow occurs within 0.5 seconds, too late for the sensors to react, negatively impacting the wafer and resulting in low vacuuming efficiency. The aforementioned device, by incorporating a secondary pipeline group, extends the gas backflow time. In some embodiments of this disclosure, the backflow time can exceed 5 seconds. A pressure sensor is installed within the cavity, and a main switch is located on the main pipeline. The pressure sensor is signal-connected to the main switch to control its opening and closing. This device not only provides buffered airflow to the main pipeline but also controls the main switch's opening and closing. For example, by controlling the pressure sensor to shut off the main pipeline before the gas backflow occurs, the device can more effectively prevent external gas backflow and improve vacuuming efficiency.

[0108] Based on and Figure 1 The semiconductor device shown is based on the same inventive concept. This disclosure also provides a control system for the semiconductor device. Since this system corresponds to the semiconductor device of this disclosure, and the principle by which this system solves the problem is similar to that of the semiconductor device, the implementation of this system can refer to the implementation of the above-described method; repeated details will not be elaborated further.

[0109] Figure 7 A schematic diagram of the structure of a control system for a semiconductor device provided in an embodiment of this disclosure is shown, such as... Figure 7 As shown, the control system of the semiconductor device includes a memory 701, a communication module 703, one or more processors 702, and a semiconductor device 700.

[0110] The memory 701 is used to store computer programs executed by the processor 702. The memory 701 may mainly include a program storage area and a data storage area. The program storage area may store the operating system and programs required to run instant messaging functions, etc.; the data storage area may store various instant messaging information and operation instruction sets, etc.

[0111] Memory 701 may be volatile memory, such as random-access memory (RAM); memory 701 may also be non-volatile memory, such as read-only memory, flash memory, hard disk drive (HDD), or solid-state drive (SSD); or memory 701 may be any other medium capable of carrying or storing desired program code in the form of instructions or data structures and accessible by a computer, but is not limited thereto. Memory 701 may be a combination of the above-described memories.

[0112] Semiconductor device 700 includes a cavity 100, a main pipeline 200, and at least one sub-pipeline group 300; one end of the main pipeline 200 is connected to the cavity 100; each sub-pipeline group 300 includes at least one sub-pipeline 301; the sub-pipeline 301 includes an inlet section and an outlet section respectively connected to the main pipeline 200, and an intermediate section connecting the inlet section and the outlet section; the inlet section and the outlet section are arranged along a first direction R, the first direction R being a direction along the main pipeline 200 from a direction away from the cavity 100 to a direction close to the cavity 100; a first angle between the inlet section and the first direction R is an acute angle; a second angle between the outlet section and the first direction R is an acute angle.

[0113] The processor 702 may include one or more central processing units (CPUs) or digital processing units, etc.

[0114] Processor 702, used for:

[0115] Gas is drawn from the cavity through a main pipeline to create a vacuum inside the cavity.

[0116] In one alternative embodiment, the semiconductor device includes a first sub-pipe group and a second sub-pipe group, the first sub-pipe group and the second sub-pipe group being disposed in different planes.

[0117] In one alternative embodiment, the first auxiliary pipeline group includes a first auxiliary pipeline and a second auxiliary pipeline; the first auxiliary pipeline and the second auxiliary pipeline are symmetrically arranged about the central axis of the main pipeline.

[0118] In one alternative embodiment, the first and second auxiliary piping groups are arranged orthogonally.

[0119] In one optional embodiment, the second auxiliary pipeline group includes a third auxiliary pipeline and a fourth auxiliary pipeline; the third auxiliary pipeline and the fourth auxiliary pipeline are symmetrically arranged about the central axis of the main pipeline; the first auxiliary pipeline and the third auxiliary pipeline are orthogonally arranged.

[0120] In one alternative embodiment, the first included angle is less than or equal to the second included angle.

[0121] In one optional embodiment, there are multiple secondary pipeline groups, and the multiple secondary pipeline groups are arranged at equal intervals along the central axis of the main pipeline according to a first distance threshold.

[0122] In one alternative embodiment, the first distance threshold is 3 to 6 times the diameter of the main pipeline.

[0123] In one alternative embodiment, the first distance threshold is 15–30 cm.

[0124] In one alternative embodiment, the diameter of the intake section is greater than or equal to the diameter of the exhaust section.

[0125] In one alternative embodiment, the diameter of the intake section is 50% to 80% of the diameter of the main pipeline.

[0126] The communication module 703 is used to communicate with the database, semiconductor device 700 and other terminals.

[0127] This disclosure does not limit the specific connection medium between the memory 701, the communication module 703, and the processor 702 described above. This disclosure does not limit the specific connection medium between the memory 701, the communication module 703, and the processor 702. Figure 7 The memory 701 and the processor 702 are connected via a bus 704, and the bus 704 is in Figure 7 The connections between other components are shown in bold lines only and are not intended to be limiting. The 704 bus can be divided into address bus, data bus, control bus, etc. For ease of illustration, Figure 7 The bus is represented by a single thick line, but this does not mean that there is only one bus or one type of bus.

[0128] In one alternative embodiment, such as Figure 8 As shown, a pressure sensor 801 is provided inside the cavity 100, and a main switch 802 is provided in the main pipeline 200. The pressure sensor 801 is signal-connected to the main switch 802 and is used to control the opening and closing of the main switch 802. The processor 701 is specifically used to control the main switch 802 to open and to extract gas from the cavity 100 through the main pipeline 200 to form a vacuum in the cavity. The processor 701 is also used to close the main switch 802 when the pressure measurement value of the pressure sensor 801 is abnormal relative to the preset pressure threshold.

[0129] In an optional embodiment, when the pressure measurement value of the pressure sensor 801 is abnormal relative to a preset pressure threshold, the main switch 802 is turned off. Specifically, after the gas is stopped being drawn from the cavity 100 through the main pipeline 200, if the pressure measurement value of the pressure sensor 801 is detected to be higher than the pressure threshold, the main switch 802 is turned off.

[0130] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A semiconductor device, characterized in that, include: cavity; A main pipeline, one end of which is connected to the cavity, is used to extract gas from the cavity to create a vacuum within the cavity; At least one secondary pipeline group, each of the secondary pipeline groups including at least one secondary pipeline; the secondary pipeline includes an air inlet section and an air outlet section respectively connected to the main pipeline, and an intermediate section connecting the air inlet section and the air outlet section; the air inlet section and the air outlet section are arranged along a first direction, the first direction being a direction along the main pipeline from the direction away from the cavity to the direction close to the cavity; The first angle between the air intake section and the first direction is an acute angle; the second angle between the air outlet section and the first direction is an acute angle.

2. The semiconductor device according to claim 1, characterized in that, It includes a first auxiliary pipeline group and a second auxiliary pipeline group, which are arranged on different planes.

3. The semiconductor device according to claim 2, characterized in that, The first auxiliary pipeline group includes a first auxiliary pipeline and a second auxiliary pipeline; the first auxiliary pipeline and the second auxiliary pipeline are symmetrically arranged about the central axis of the main pipeline.

4. The semiconductor device according to claim 2, characterized in that, The first and second auxiliary pipeline groups are arranged orthogonally.

5. The semiconductor device according to claim 3, characterized in that, The second auxiliary pipeline group includes a third auxiliary pipeline and a fourth auxiliary pipeline; the third auxiliary pipeline and the fourth auxiliary pipeline are symmetrically arranged about the central axis of the main pipeline; the first auxiliary pipeline and the third auxiliary pipeline are orthogonally arranged.

6. The semiconductor device according to claim 1, characterized in that, The first included angle is less than or equal to the second included angle.

7. The semiconductor device according to claim 1, characterized in that, There are multiple secondary pipeline groups, and the multiple secondary pipeline groups are arranged at equal intervals along the central axis of the main pipeline at a first distance threshold.

8. The semiconductor device according to claim 7, characterized in that, The first distance threshold is 3 to 6 times the diameter of the main pipeline.

9. The semiconductor device according to claim 8, characterized in that, The first distance threshold is 15-30cm.

10. The semiconductor device according to any one of claims 1 to 9, characterized in that, The diameter of the air intake section is greater than or equal to the diameter of the air outlet section.

11. The semiconductor device according to claim 10, characterized in that, The diameter of the air intake section is 50% to 80% of the diameter of the main pipeline.

12. The semiconductor device according to claim 10, characterized in that, A pressure sensor is installed inside the cavity, and a main switch is installed in the main pipeline. The pressure sensor is signal-connected to the main switch and is used to control the opening and closing of the main switch.

13. A control system for a semiconductor device, characterized in that, Includes a processor and a semiconductor device; the semiconductor device includes a cavity, a main pipeline, and at least one group of secondary pipelines; One end of the main pipeline is connected to the cavity; Each of the secondary pipeline groups includes at least one secondary pipeline; the secondary pipeline includes an air inlet section and an air outlet section respectively connected to the main pipeline, and an intermediate section connecting the air inlet section and the air outlet section; the air inlet section and the air outlet section are arranged along a first direction, the first direction being a direction along the main pipeline from away from the cavity to closer to the cavity; a first angle between the air inlet section and the first direction is an acute angle; a second angle between the air outlet section and the first direction is an acute angle; The processor is configured to extract gas from the cavity via the main pipeline to create a vacuum within the cavity.

14. The system according to claim 13, characterized in that, The semiconductor device includes a first sub-pipe group and a second sub-pipe group, which are disposed in different planes.

15. The system according to claim 14, characterized in that, The first auxiliary pipeline group includes a first auxiliary pipeline and a second auxiliary pipeline; the first auxiliary pipeline and the second auxiliary pipeline are symmetrically arranged about the central axis of the main pipeline.

16. The system according to claim 14, characterized in that, The first and second auxiliary pipeline groups are arranged orthogonally.

17. The system according to claim 13, characterized in that, The first included angle is less than or equal to the second included angle.

18. The system according to any one of claims 13-17, characterized in that, A pressure sensor is installed inside the cavity, and a main switch is installed in the main pipeline. The pressure sensor is signal-connected to the main switch and is used to control the opening and closing of the main switch. The processor is specifically used to control the main switch to turn on and to extract gas from the cavity through the main pipeline to create a vacuum in the cavity; The processor is also configured to turn off the main switch when the pressure measurement value of the pressure sensor is abnormal relative to a preset pressure threshold.

19. The system according to claim 18, characterized in that, The step of turning off the main switch when the pressure measurement value of the pressure sensor is abnormal relative to a preset pressure threshold includes: When gas extraction from the cavity through the main pipeline is stopped, if the pressure measurement value of the pressure sensor is found to be higher than the pressure threshold, the main switch is turned off.

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