Surface emitting laser device and light emitting device including the same

Abstract

Embodiments of the present application relate to a surface emitting laser device and a light emitting device comprising the same, the surface emitting laser device comprising: a first reflective layer, a second reflective layer, and an active region, the first reflective layer comprising: a first-first layer having a first aluminum concentration; a first-second layer having a second aluminum concentration higher than the first aluminum concentration and arranged on the first-first layer; and a first-third layer arranged between the first-first layer and the first-second layer and having a third aluminum concentration varying from the first aluminum concentration to the second aluminum concentration within the first-third layer, the first-first layer being closer to the active region than the first-second layer, the first-first layer, the first-second layer, and the first-third layer being doped with a dopant of a first conductivity type, the first conductive dopant concentration of the first-third layer being lower than the first conductive dopant concentration of the first-first layer and / or the first conductive dopant concentration of the first-second layer.

Description

[0001] This application is a divisional application of the invention patent application filed on January 7, 2019, with application number 201910011551.0 and invention title "Surface Emitting Laser Device and Light Emitting Device Including the Thereof".

[0002] Cross-references to related applications

[0003] This application claims priority to KR10-2018-0002976, filed in Korea on January 9, 2018, and KR10-2018-0013486, filed in Korea on February 2, 2018, the entire contents of which are incorporated herein by reference. Technical Field

[0004] The embodiments relate to a semiconductor device, and more specifically, to a surface-emitting laser device, a surface-emitting laser package, and a light-emitting device including the surface-emitting laser device. Background Technology

[0005] Semiconductor devices, including compounds such as GaN and AlGaN, have many advantages, such as having a wide and easily tunable bandgap energy, and can be used in various ways as light-emitting devices, light-receiving devices, and various diodes.

[0006] In particular, light-emitting devices using group III-V or II-VI compound semiconductor materials, such as light-emitting diodes (LEDs) or laser diodes, can achieve various colors, such as red, green, blue, and ultraviolet, through thin-film growth techniques and the development of device materials. High-efficiency white light rays can be achieved by using fluorescent materials or combining colors, offering advantages over traditional light sources such as fluorescent and incandescent lamps, including low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness. Furthermore, when light-receiving devices such as photodetectors or solar cells are fabricated using group III-V or II-VI compound semiconductor materials, light from various wavelength regions, ranging from gamma rays to radio waves, can be utilized by absorbing light in various wavelength regions and generating photocurrents. Moreover, the fast response speed, safety, environmental friendliness, and ease of control over device materials make these devices readily applicable to power control, microwave circuits, or communication modules.

[0007] Therefore, applications have expanded to transmission modules of optical communication devices, LED backlights that replace the cold cathode fluorescent lamps (CCFLs) that make up the backlights of liquid crystal display (LCD) devices, white LED lighting devices that can replace fluorescent or incandescent lamps, automotive headlights, traffic lights, and even sensors that detect gases or fires.

[0008] Furthermore, the application can be extended to high-frequency application circuits or other power control devices, and even communication modules.

[0009] For example, in traditional semiconductor light source device technology, there is the vertical cavity surface-emitting laser (VCSEL), which is used for optical communication, optical parallel processing, optical connections, etc.

[0010] Meanwhile, in the case of the laser diode used in this communication module, it is designed to operate at low current.

[0011] However, when such VCSELs are applied to laser diode autofocus (LDAF) or structured optical sensors, they operate at high currents of several kilowatts, resulting in reduced light output and increased threshold current.

[0012] In other words, in the epitaxial structure of traditional VCSELs, response speed is important in traditional structures focused on data optical communication. However, when developing high-power packages for sensors, optical output and voltage efficiency are important characteristics, but there are limitations in simultaneously improving optical output and voltage efficiency in traditional VCSEL structures.

[0013] For example, VCSEL structures require a large number of reflective layers, such as distributed Bragg reflectors (DBRs), but series resistance occurs in such DBRs.

[0014] In existing technologies, attempts have been made to improve voltage efficiency by increasing the doping concentration to reduce resistance, thus preventing the presence of this resistance in such DBRs. However, as the doping concentration increases, a technical contradiction arises where internal light absorption occurs due to the dopant, resulting in a decrease in light output.

[0015] Furthermore, the DBR, as a reflective layer in the prior art, uses alternating arrangements of Al atoms with different Al compositions. x GaAs-based materials are used to increase reflectivity. However, an electric field is generated at the interface between adjacent DBR layers by band bending, and this electric field becomes a carrier barrier, thereby reducing light output.

[0016] In addition, when developing high-power packages for VCSELs, optical output and voltage efficiency are important characteristics, but there are limitations to improving both simultaneously.

[0017] For example, existing VCSEL structures have a light-emitting layer and a predetermined resonator (cavity) region, and such a region has high internal resistance, which leads to technical problems of increased driving voltage and reduced voltage efficiency.

[0018] In addition, optical confinement is needed around the light-emitting layer to improve light output in existing technologies, but there is no suitable solution in existing technologies. Summary of the Invention

[0019] One of the technical problems of the embodiments is to provide a surface-emitting laser device and a light-emitting device including the surface-emitting laser device, which can improve light output while improving voltage efficiency.

[0020] Furthermore, one of the technical problems of the embodiments is to provide a surface-emitting laser device and a light-emitting device including the surface-emitting laser device, which can improve light output by minimizing the effect of the carrier barrier caused by the electric field generated in the reflective layer.

[0021] Furthermore, one of the technical problems of the embodiments is to provide a surface-emitting laser device and a light-emitting device including the surface-emitting laser device, which can improve light output by improving voltage efficiency.

[0022] Another technical problem of the embodiments is to provide a surface-emitting laser device and a light-emitting device including the surface-emitting laser device, which can improve light output by improving the optical confinement efficiency around the light-emitting layer.

[0023] The surface-emitting laser device according to an embodiment includes: a first reflective layer 220 and a second reflective layer 250; an active region 230 disposed between the first reflective layer 220 and the second reflective layer 250, wherein the first reflective layer 220 includes a first group of first reflective layers 221 and a second group of first reflective layers 222, and the second reflective layer 250 includes a first group of second reflective layers 251 and a second group of second reflective layers 252.

[0024] Furthermore, the first group of second reflective layers includes: a first-first layer having a first aluminum concentration; a first-second layer having a second aluminum concentration higher than the first aluminum concentration and disposed on the first-first layer; and a first-fourth layer having a fourth aluminum concentration varying from the second aluminum concentration to the first aluminum concentration and disposed on the first-second layer.

[0025] In addition, the first and second layers can be arranged between the first and fourth layers.

[0026] In addition, the first layer can be closer to the aperture region than the first layer.

[0027] In addition, the second reflective layer can be doped with a second conductive dopant.

[0028] Furthermore, the second conductive doping concentration of the first to fourth layers can be higher than that of the first to first layers and / or the first to second layers.

[0029] Furthermore, the second conductive dopant contains carbon (C). And the first layer can be closer to the aperture region than the second layer.

[0030] In addition, the second reflective layer may include a third set of second reflective layers, which are arranged closer to the aperture region than the first set of second reflective layers.

[0031] In addition, the average second conductive doping concentration of the third group of second reflective layers can be less than the average second conductive doping concentration of the first group of second reflective layers.

[0032] The first group of second reflective layers 251 may include: a second-first reflective layer 251p having a first aluminum concentration; a second-second reflective layer 251q having a second aluminum concentration higher than the first aluminum concentration and disposed on one side of the second-first reflective layer 251p; and a second-third reflective layer 251r having a third aluminum concentration varying from the first aluminum concentration to the second aluminum concentration and disposed between the second-first reflective layer 251p and the second-second reflective layer 251q.

[0033] The second conductive doping concentration of the second-third reflective layer 251r can be higher than that of the second-first reflective layer 251p or the second-second reflective layer 251q.

[0034] Additionally, the first group of second reflective layers 251 may include: a second-first reflective layer 251p having a first refractive index; a second-second reflective layer 251q having a second refractive index lower than the first refractive index and disposed on one side of the second-first reflective layer 251p; and a second-third reflective layer 251r having a third refractive index between the first and second refractive indices and disposed between the second-first reflective layer 251p and the second-second reflective layer 251q.

[0035] The second conductive doping concentration of the second-third reflective layer 251r can be higher than that of the second-first reflective layer 251p or the second-second reflective layer 251q.

[0036] The surface-emitting laser device according to an embodiment includes: a first reflective layer 220 and a second reflective layer 250; an active region 230 disposed between the first reflective layer 220 and the second reflective layer 250, wherein the first reflective layer 220 includes: a first-first layer 220a having a first aluminum concentration; a first-second layer 220b having a second aluminum concentration higher than the first aluminum concentration and disposed on one side of the first-first layer 220a; and a first-third layer 220c having a third aluminum concentration varying from the first aluminum concentration to the second aluminum concentration and disposed between the first-first layer 220a and the first-second layer 220b.

[0037] The first reflective layer 220 may include a first conductive dopant, and the concentration of the first conductive dopant in the first-third layer 220c may be lower than the concentration of the first conductive dopant in the first-first layer 220a and the first-second layer 220b.

[0038] Additionally, the surface-emitting laser device according to the embodiment includes: a first reflective layer 220 and a second reflective layer 250; and an active region 230 disposed between the first reflective layer 220 and the second reflective layer 250, wherein the first reflective layer 220 includes: a first-first layer 220a having a first refractive index; a first-second layer 220b having a second refractive index lower than the first refractive index and disposed on one side of the first-first layer 220a; and a first-third layer 220c having a third refractive index between the first refractive index and the second refractive index and disposed between the first-first layer 220a and the first-second layer 220b.

[0039] The first reflective layer 220 may include a first conductive dopant, and the concentration of the first conductive dopant in the first-third layer 220c may be lower than the concentration of the first conductive dopant in the first-first layer 220a and the first-second layer 220b.

[0040] According to an embodiment, there exists a surface-emitting laser device that can improve light output while improving voltage efficiency, and a light-emitting device including the surface-emitting laser device.

[0041] Furthermore, the embodiments include a surface-emitting laser device capable of improving light output by minimizing the effect of carrier barrier caused by the electric field generated in the reflective layer, and a light-emitting device including the surface-emitting laser device.

[0042] The surface-emitting laser device according to the embodiment may include: a first reflective layer 220 including a first conductive dopant; a second reflective layer 250 including a second conductive dopant; and an active region 230 disposed between the first reflective layer 220 and the second reflective layer 250.

[0043] The active region 230 may include a first cavity 231 and an active layer 232. The first cavity 231 is disposed on the first reflective layer 220. The active layer 232 includes a quantum well 232a and a quantum wall 232b and is disposed on the first cavity 231. The first cavity 231 may be adjacent to the first reflective layer 220 and may include a first conductive first doped layer 261.

[0044] The thickness of the first conductive-first doped layer 261 may be 70% or less of the thickness of the first cavity 231.

[0045] The surface-emitting laser package according to the embodiments may include a surface-emitting laser device.

[0046] According to an embodiment, a surface-emitting laser device and a light-emitting device including the surface-emitting laser device can be provided, which have the technical effect of improving light output by improving voltage efficiency.

[0047] Furthermore, according to embodiments, a surface-emitting laser device and a light-emitting device including the surface-emitting laser device can be provided, which have the technical effect of improving light output by improving the optical confinement efficiency around the light-emitting layer. Attached Figure Description

[0048] Figure 1 This is a cross-sectional view of a surface-emitting laser device according to an embodiment.

[0049] Figure 2 This is an enlarged cross-sectional view of a surface-emitting laser device according to an embodiment.

[0050] Figure 3 These are the first distribution data of refractive index and light energy in the surface-emitting laser device according to the embodiment.

[0051] Figure 4A These are the first data on the refractive index and light energy in the first reflective layer of the surface-emitting laser device according to the embodiment.

[0052] Figure 4B These are data on the Al concentration and the doping concentrations of dopants Si and C in the surface-emitting laser device according to the embodiment.

[0053] Figure 4C This is the second distribution data of the refractive index in the surface-emitting laser device according to the embodiment.

[0054] Figure 4D This is second data concerning the refractive index in the first reflective layer of the surface-emitting laser device according to the embodiment.

[0055] Figure 4E This is data concerning the refractive index in the second reflective layer of the surface-emitting laser device according to the embodiment.

[0056] Figure 4F The data are secondary ion mass spectrometry (SIMS) data of the second reflective layer of the surface-emitting laser device according to the embodiment.

[0057] Figure 4G yes Figure 4F A magnified view of region P2.

[0058] Figures 5 to 8This is a cross-sectional view of the process for manufacturing a surface-emitting laser device according to an embodiment.

[0059] Figures 9 to 14 This is a cross-sectional view of the process for manufacturing a surface-emitting laser device according to the second embodiment.

[0060] Figure 15 This is an exemplary view of the energy band diagram of a semiconductor device according to the third embodiment.

[0061] Figure 16 This is an exemplary view of the energy band diagram of a semiconductor device according to the fourth embodiment.

[0062] Figure 17A and 17B This refers to the doping concentration data in the cavity region of the semiconductor device according to the embodiment.

[0063] Figure 18 This is an exemplary view of the energy band diagram of a semiconductor device according to the fifth embodiment.

[0064] Figure 19 This is a perspective view of a mobile terminal including a surface-emitting laser package according to an embodiment. Detailed Implementation

[0065] In the following description, a light-emitting device, a light-emitting device package, and a lighting system according to embodiments will be described with reference to the accompanying drawings.

[0066] In the description of the embodiments, it will be understood that when a layer (or film) is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or an intermediate layer may also be present. Furthermore, it will be understood that when a layer is referred to as being "below" another layer, it can be directly below the other layer, and one or more intermediate layers may also be present. Additionally, it will be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intermediate layers may also be present.

[0067] In embodiments, the semiconductor device may include various electronic devices, such as light-emitting devices and light-receiving devices, and the light-emitting devices and light-receiving devices may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. In embodiments, the semiconductor device may be a laser diode. For example, in embodiments, the semiconductor device may be a vertical-cavity surface-emitting laser (VCSEL), but is not limited thereto.

[0068] (Example)

[0069] Figure 1 This is a cross-sectional view of the surface-emitting laser device 200 according to an embodiment.

[0070] The surface-emitting laser device 200 according to an embodiment may include at least one of a first electrode 215, a first substrate 210, a first reflective layer 220, an active region 230, an aperture region 240, a second reflective layer 250, a second contact electrode 255, a second electrode 280, and a passivation layer 270. The aperture region 240 may include an insulating region 242 and an aperture 241, and may be referred to as an intermediate layer. The first reflective layer 220, the active region 230, the insulating region 242, and the second reflective layer 250 may be referred to as a light-emitting structure. Figure 2 As shown, the active region 230 may include an active layer 232 and cavities 231 and 233, and may be referred to as the cavity region.

[0071] The following text will primarily refer to Figure 1 The technical features of the surface-emitting laser device 200 according to an embodiment are described, and reference will also be made to... Figures 2 to 4E Describe the main technical effects.

[0072] <First substrate, first electrode>

[0073] In the embodiments, the first substrate 210 may be a conductive substrate or a non-conductive substrate. When a conductive substrate is used, a metal with excellent conductivity can be used, and since the heat generated when the laser device 200 is emitted from the operating surface should be sufficiently dissipated, GaAs substrates or metal substrates with high thermal conductivity, or silicon (Si) substrates, can be used.

[0074] When using a non-conductive substrate, an AlN substrate, a sapphire (Al2O3) substrate, or a ceramic substrate can be used.

[0075] In this embodiment, the first electrode 215 may be disposed under the first substrate 210, and the first electrode 215 may be disposed as a conductive material in a single layer or multiple layers. For example, the first electrode 215 may be a metal, and may include at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au), and may be formed as a single layer or multiple layers to improve electrical properties and optical output.

[0076] <First Reflective Layer>

[0077] Figure 2 yes Figure 1 The enlarged cross-sectional view of region A of the surface-emitting laser device according to the embodiment is shown.

[0078] In the following text, reference will be made to Figure 2 Surface-emitting laser devices described in the embodiments

[0079] In an embodiment, the first reflective layer 220 may be disposed on the first substrate 210.

[0080] The first reflective layer 220 may be doped with a first conduction type. For example, the first conductive dopant may include an n-type dopant such as Si, Ge, Sn, Se, and Te.

[0081] In addition, the first reflective layer 220 may include a gallium-based compound, for example, AlGaAs, but is not limited thereto. The first reflective layer 220 may be a distributed Bragg reflector (DBR). For example, the first reflective layer 220 may have a structure in which a first layer and a second layer made of materials having different refractive indices are alternately stacked at least once.

[0082] First, the first reflective layer 220 may include a first set of first reflective layers 221 disposed on one side of the active region 230 and a second set of first reflective layers 222 disposed more adjacent to the active region 230 than the first set of first reflective layers 221.

[0083] The first set of first reflective layers 221 and the second set of first reflective layers 222 may have multiple layers made of a semiconductor material having a composition formula of Al x Ga (1-x) As (0 < x < 1). As the Al in each layer increases, the refractive index of each layer may decrease, and as the Ga increases, the refractive index of each layer may increase.

[0084] In addition, the thickness of each layer may be λ / 4n, where λ may be the wavelength of the light generated in the active region 230, and n may be the refractive index of each layer with respect to the light of the above wavelength. Here, λ may be from 650 to 980 nanometers (nm), and n may be the refractive index of each layer. The first reflective layer 220 having such a structure may have a reflectivity of 99.999% with respect to light having a wavelength region of about 940 nm.

[0085] The thickness of each layer in the first reflective layer 220 may be determined according to each refractive index and wavelength λ of the light emitted in the active region 230.

[0086] For example, the first set of first reflective layers 221 may include about 30 to 40 pairs of first set of first - first layers 221a and first set of first - second layers 221b. The first set of first - first layers 221a may be formed thicker than the first set of first - second layers 221b. For example, the first set of first - first layers 221a may be formed to have a thickness of about 40 to 60 nm, and the first set of first - second layers 221b may be formed to have a thickness of about 20 to 30 nm.

[0087] Furthermore, the second set of first reflective layers 222 may include approximately 5 to 15 pairs of second set of first-first layers 222a and second set of first-second layers 222b. The second set of first-first layers 222a may be formed to be thicker than the second set of first-second layers 222b. For example, the second set of first-first layers 222a may be formed to have a thickness of approximately 40 to 60 nm, and the second set of first-second layers 222b may be formed to have a thickness of approximately 20 to 30 nm.

[0088] In the following text, reference will be made to Figures 3 to 4D The technical effects of the surface-emitting laser device according to the embodiments are described in detail.

[0089] First, one of the technical problems of the embodiments is to provide a surface-emitting laser device and a light-emitting device including the surface-emitting laser device, which can improve light output by minimizing the effect of carrier barrier caused by the electric field generated in the reflective layer.

[0090] In other words, as mentioned above, in the traditional VCSEL structure, there is a problem that the carrier barrier is generated due to the energy band bending at the interface between adjacent DBR layers, which degrades the optical output.

[0091] Figure 3 This refers to the first distribution data of refractive index and light energy in the surface-emitting laser device according to the embodiment, and Figure 4A yes Figure 3 The diagram shows first data on the refractive index n and light energy E in the first reflective layer of region B of the surface-emitting laser device according to an embodiment. According to the embodiment, the distribution of light energy emitted from the surface-emitting laser device can have a maximum value centered on the active region 230, such as... Figure 3 As shown, the light energy distribution E decreases over a predetermined period of time as the distance from the active region 230 increases. Meanwhile, in this embodiment, the light energy distribution E is not limited to... Figure 3 The distribution data shown, and depending on the composition, thickness, etc. of each layer, the light energy distribution in each layer can be compared with... Figure 3 The difference is shown.

[0092] refer to Figure 3 The surface-emitting laser device 200 according to an embodiment may include a first reflective layer 220, a second reflective layer 250, and an active region 230 disposed between the first reflective layer 220 and the second reflective layer 250. In this respect, depending on the materials of the first reflective layer 220, the second reflective layer 250, and the active region 230, the surface-emitting laser device 200 according to an embodiment may have, for example... Figure 3 The refractive index n is shown in the figure.

[0093] refer to Figure 4A, in an embodiment, the first reflective layer 220 may include a first-first layer 220a having a first refractive index, a first-second layer 220b having a second refractive index lower than the first refractive index and disposed on one side of the first-first layer 220a, and a first-third layer 220c having a third refractive index between the first refractive index and the second refractive index and disposed between the first-first layer 220a and the first-second layer 220b.

[0094] For example, the first reflective layer 220 may have a first-first layer 220a having a first aluminum concentration, a first-second layer 220b having a second aluminum concentration higher than the first aluminum concentration and disposed on one side of the first-first layer 220a, and a first-third layer 220c having a third aluminum concentration varying from the first aluminum concentration to the second aluminum concentration and disposed between the first-first layer 220a and the first-second layer 220b.

[0095] For example, when the first reflective layer 220 includes Al x Ga (1-x) As (0 < x < 1), the first-first layer 220a may be Al 0.12 Ga 0.88 As, and when the first-second layer 220b is Al 0.88 Ga 0.12 As, then the first-third layer 220c may be Al x3 Ga (1-x3) As (0.12 ≤ x3 ≤ 0.88).

[0096] In this way, according to the embodiment, since the first reflective layer 220 is provided with the first to third layers 220c having an aluminum concentration in the intermediate region between the first-second layer 220b and the first-first layer 220a adjacent to the first reflective layer 220, and by minimizing the generation of an electric field due to band bending at the interface between adjacent reflective layers, the carrier barrier is reduced, and there is a technical effect of improving the light output.

[0097] Therefore, according to the embodiment, it is possible to provide a surface-emitting laser device and a light-emitting device including the surface-emitting laser device, which can improve the light output by minimizing the influence of the carrier barrier caused by the generation of an electric field in the reflective layer.

[0098] Next, one of the other technical problems of the embodiment is to provide a surface-emitting laser device and a light-emitting device including the surface-emitting laser device, which can improve the light output while improving the voltage efficiency.

[0099] In other words, existing technologies attempt to improve voltage efficiency by increasing doping concentration to reduce resistance, thereby preventing the formation of resistance in the DBR, which serves as a reflective layer. However, a technical contradiction exists: increasing the doping concentration leads to internal light absorption due to the dopant, resulting in reduced light output.

[0100] To address this technical problem, the embodiments have the technical effect that controlling the concentration of the first conductive dopant in the reflective layer by taking into account the light energy separate modes can improve light output and also increase voltage efficiency.

[0101] Specifically, refer to Figure 4A The light energy E in the first-third layer 220c can be higher than that in the first-first layer 220a and the first-second layer 220b. The first-first layer 220a can be arranged closer to the active region 230 than the first-second layer 220b.

[0102] Table 1 below shows the light energy distribution of the Al concentration and refractive index of the first reflective layer according to the embodiment, as well as the doping concentration data of the n-type dopant in each layer.

[0103] [Table 1]

[0104] layer Al concentration (x) Refractive index (n) Light energy (E) Doping concentration First-First Floor 220a 0.12 high middle middle First to third layers 220c 0.12->0.88 middle high Low First and second layers 220b 0.88 Low middle middle First to fourth layers 220d 0.88->0.12 middle Low high

[0105] At this time, when the first reflective layer 220 includes a first conductive dopant, the concentration of the first conductive dopant in the first-third layer 220c can be lower than the concentrations in the first-first layer 220a and the first-second layer 220b.

[0106] According to the embodiments, since the light absorption of the dopant can be minimized and the light output can be improved by doping a relatively low-conductivity first dopant in the first-third layer 220c region where the light energy is relatively high, there are specific technical effects that can provide a surface-emitting laser device and a light-emitting device including the surface-emitting laser device, which can simultaneously improve light output and voltage efficiency.

[0107] Furthermore, the first reflective layer 220 of the embodiment may also include a first-fourth layer 220d, which is disposed on one side of the first-second layer 220b and has a fourth aluminum concentration. The first-fourth layer 220d may be further separated from the active region 230, rather than from the first-second layer 220b.

[0108] At this time, the light energy in the first-fourth layers 220d can be lower than the light energy in the first-first layer 220a and the first-second layer 220b. In this way, the light energy in the first-fourth layers 220d can be lower than the light energy in the first-first layer 220a, the first-second layer 220b, and the first-third layer 220c.

[0109] The concentration of the first conductive dopant in the first to fourth layers 220d can be controlled to be higher than the concentration of the first conductive dopant in the first to first layer 220a and the first to second layer 220b.

[0110] For example, when the first reflective layer 220 includes Al x Ga (1-x) As (0 < x < 1), the first to first layer 220a can be Al 0.12 Ga 0.88 As, and when the first to second layer 220b is Al 0.88 Ga 0.12 As, then the first to fourth layer 220d can be Al x4 Ga (1-x4) As (0.12 ≤ x4 ≤ 0.88, x4 increasing from 0.12 to 0.88).

[0111] At this time, the light energy in the first to fourth layer 220d can be lower than the light energy in the first to first layer 220a and the first to second layer 220b, respectively.

[0112] In an embodiment, the concentration of the first conductive dopant in the first to fourth layer 220d is controlled to be higher than the concentration of the first conductive dopant in the first to first layer 220a and the first to third layer 220c and the doping concentration in the first to fourth layer 220d is controlled to be maximum, and thus has a specific technical effect that the voltage efficiency can be improved through resistance improvement. At the same time, the dopant can minimize light absorption and the light output may be improved.

[0113] Figure 4B is a graph showing data of the Al concentration and the doping concentrations of dopants Si and C in a surface-emitting laser device according to an embodiment.

[0114] In Figure 4B the horizontal axis is the distance in the direction from the second reflective layer towards the first reflective layer, and the vertical axis is the data of the Al concentration and the doping concentrations of dopants Si and C.

[0115] According to an embodiment, the first reflective layer 220 doped with Si as the first dopant may include a first to first layer 220a having a first aluminum concentration, a first to second layer 220b having a second aluminum concentration higher than the first aluminum concentration and disposed on one side of the first to first layer 220a, and a first to third layer 220c having a third aluminum concentration varying from the first aluminum concentration to the second aluminum concentration and disposed between the first to first layer 220a and the first to second layer 220b.

[0116] At this time, the Al concentration in the first-first layer 220a or the first-second layer 220b may not have a fixed value, but may have an Al concentration value within a predetermined range.

[0117] Furthermore, the upper or lower limit of the dopant concentration of Si, which is the first conductive dopant, or the dopant concentration of C, which is the second conductive dopant, may not have a specific fixed value, and the upper or lower limit may have a range of values ​​within a specific range.

[0118] Next, Figure 4C It is the second distribution data of the refractive index n in the surface-emitting laser device according to the embodiment.

[0119] Figure 4D It is relative to the second region B2. Figure 4C The second data for the refractive index n of the first reflective layer 220 of the surface-emitting laser device according to the embodiment is shown, and Figure 4E This is the third data point regarding the refractive index n of the second reflective layer 250 relative to the third region P.

[0120] First, refer to Figure 4D In an embodiment, the first reflective layer 220 may include a first group of first reflective layers 221 and a second group of first reflective layers 222.

[0121] At this time, the first group of first reflective layers 221 may include multiple layers, such as first-first reflective layer 221p, first-second reflective layer 221q, first-third reflective layer 221r, and first-fourth reflective layer 221s.

[0122] In an embodiment, when the first-first reflective layer 221p to the first-fourth reflective layer 221s are formed as a pair, the first group of first reflective layers 221 may include multiple pairs. For example, in an embodiment, the first group of first reflective layers 221 may include approximately 30 to 40 pairs of first-first reflective layers 221p to the first-fourth reflective layers 221s.

[0123] In addition, the second group of first reflective layers 222 may include multiple layers, such as first-fifth reflective layers 222p, first-sixth reflective layers 222q, first-seventh reflective layers 222r, and first-eighth reflective layers 222s.

[0124] Furthermore, when the first to fifth reflective layers 222p to the first to eighth reflective layers 222s are formed as a pair, the second group of first reflective layers 222 may also include multiple pairs. For example, in an embodiment, when the first to fifth reflective layers 222p to the first to eighth reflective layers 222s are formed as a pair, the second group of first reflective layers 222 may include approximately 5 to 15 pairs.

[0125] In a conventional VCSEL structure, there is a problem that a carrier barrier is generated due to a band bending at an interface between adjacent DBR layers, thereby deteriorating the light output.

[0126] For this reason, one of the technical problems of the embodiment is to provide a surface emitting laser device and a light emitting device including the surface emitting laser device, which can improve the light output by minimizing the influence of the carrier barrier caused by the generation of an electric field in the reflection layer.

[0127] Reference Figure 4D , in the embodiment, the first set of first reflection layers 221 may include a first-first reflection layer 221p, a first-second reflection layer 221q, a first-third reflection layer 221r, and a first-fourth reflection layer 221s, and each layer may have a different refractive index.

[0128] For example, the first set of first reflection layers 221 may include a first-first reflection layer 221p having a first refractive index, a first-second reflection layer 221q having a second refractive index lower than the first refractive index and disposed on one side of the first-first reflection layer 221p, and a first-third reflection layer 221r having a third refractive index between the first refractive index and the second refractive index and disposed between the first-first reflection layer 221p and the first-second reflection layer 221q.

[0129] For example, the first set of first reflection layers 221 may include a first-first reflection layer 221p having a first aluminum concentration, a first-second reflection layer 221q having a second aluminum concentration higher than the first aluminum concentration and disposed on one side of the first-first reflection layer 221p, and a first-third reflection layer 221r having a third aluminum concentration varying from the first aluminum concentration to the second aluminum concentration and disposed between the first-first reflection layer 221p and the first-second reflection layer 221q.

[0130] For example, when the first set of first reflection layers 221 includes Al x Ga (1-x) As (0 < x < 1), the first-first reflection layer 221p may be Al 0.12 Ga 0.88 As, the first-second reflection layer 221q may be Al 0.88 Ga 0.12 As, and the first-third reflection layer 221r may be Al x3 Ga (1-x3) As (0.12 ≤ x3 ≤ 0.88), but the present invention is not limited thereto.

[0131] In addition, the first first reflective layer 221 may further include first - fourth reflective layers 221s, which are arranged outside the first - second reflective layers 221q and have a fourth aluminum concentration that varies from a first aluminum concentration to a second aluminum concentration.

[0132] For example, when the first first reflective layer 221 includes Al x Ga (1-x) As (0 < x < 1), the first - fourth reflective layers 221s may be Al x4 Ga (1-x4) As (0.12 ≤ x4 ≤ 0.88), but is not limited thereto.

[0133] In this way, according to the embodiment, by providing the first - third reflective layer 221r or the first - fourth reflective layer 221s having an intermediate aluminum concentration between adjacent first - first reflective layers 221p and first - second reflective layers 221q, the electric field generated due to the band bending at the interface between adjacent reflective layers can be minimized, and the carrier barrier can be reduced, and thus there is a technical effect that the light output can be improved.

[0134] Therefore, according to the embodiment, it is possible to provide a surface - emitting laser device and a light - emitting device including the surface - emitting laser device, which can improve the light output by minimizing the influence of the carrier barrier caused by the generation of an electric field in the reflective layer.

[0135] In addition, in the embodiment, the thickness of the first - second reflective layer 221q may be greater than the thickness of the first - first reflective layer 221p. In addition, the thickness of the first - first reflective layer 221p or the first - second reflective layer 221q may be greater than the thickness of the first - third reflective layer 221r or the first - fourth reflective layer 221s.

[0136] At this time, the first aluminum concentration of the first - first reflective layer 221p may be higher than the second aluminum concentration of the first - second reflective layer 221q. In addition, the first aluminum concentration of the first - first reflective layer 221p may be higher than the third aluminum concentration of the first - third reflective layer 221r or the fourth aluminum concentration of the first - fourth reflective layer 221s. <00004​​​​​

[0139] For example, since the thickness of the first-second reflective layer 221q can be about 50 to 55 nm, the thickness of the first-first reflective layer 221p can be about 40 to 45 nm, and the thickness of the first-second reflective layer 221q having a relatively high aluminum concentration is thicker than that of the first-first reflective layer 221p, which can improve the quality of the crystal lattice and contribute to light output.

[0140] In addition, since the thickness of the first-third reflective layer 221r can be about 22 to 27 nm, the thickness of the first-fourth reflective layer 221s can be about 22 to 27 nm, and the thickness of the first-second reflective layer 221q or the first-first reflective layer 221p having a relatively high aluminum concentration is thicker than that of the first-third reflective layer 221r or the first-fourth reflective layer 221s, which can improve the quality of the crystal lattice and contribute to light output.

[0141] Continuously, referring to Figure 4D , in the embodiment, the second group of the first reflective layers 222 may include a first-fifth reflective layer 222p, a first-sixth reflective layer 222q, a first-seventh reflective layer 222r, and a first-eighth reflective layer 222s, and each layer may have a different refractive index.

[0142] For example, the second group of the first reflective layers 222 may include a first-fifth reflective layer 222p having a fifth refractive index, a first-sixth reflective layer 222q having a sixth refractive index lower than the fifth refractive index and disposed on one side of the first-fifth reflective layer 222p, and a first-seventh reflective layer 222r having a seventh refractive index between the fifth refractive index and the sixth refractive index and disposed between the first-fifth reflective layer 222p and the first-sixth reflective layer 222q.

[0143] For example, the second group of the first reflective layers 222 may include a first-fifth reflective layer 222p having a fifth aluminum concentration, a first-sixth reflective layer 222q having a sixth aluminum concentration higher than the fifth aluminum concentration and disposed on one side of the first-fifth reflective layer 222p, and a first-seventh reflective layer 222r having a seventh aluminum concentration varying from the fifth aluminum concentration to the sixth aluminum concentration and disposed between the first-fifth reflective layer 222p and the first-sixth reflective layer 222q.

[0144] For example, when the second group of the first reflective layers 222 includes Al x Ga (1-x) As (0 < x < 1), the first-fifth reflective layer 222p may be Al 0.12 Ga 0.88 A, the first-sixth reflective layer 222q may be Al0.88 Ga 0.12 As, and the first - seventh reflective layers 222r can be Al x3 Ga (1-x3) As (0.12 ≤ x3 ≤ 0.88), but not limited thereto.

[0145] In addition, the second group of the first reflective layers 222 may further include the first - eighth reflective layers 222s, which are arranged outside the first - sixth reflective layers 222q and have an eighth aluminum concentration that varies from a fifth aluminum concentration to a sixth aluminum concentration.

[0146] For example, when the second group of the first reflective layers 222 includes Al x Ga (1-x) As (0 < x < 1), the first - eighth reflective layers 222s can be Al x4 Ga (1-x4) As (0.12 ≤ x4 ≤ 0.88), but not limited thereto.

[0147] In this way, according to the embodiment, by providing the first - seventh reflective layers 222r or the first - eighth reflective layers 222s having an intermediate aluminum concentration between the adjacent first - fifth reflective layers 222p and the first - sixth reflective layers 222q, the generation of an electric field due to band bending at the interface between adjacent reflective layers can be minimized, the carrier barrier can be reduced, and thus there is a technical effect that the light output can be improved.

[0148] Therefore, according to the embodiment, a surface - emitting laser device and a light - emitting device including the surface - emitting laser device can be provided, which can improve the light output by minimizing the influence of the carrier barrier caused by the generation of an electric field in the reflective layer.

[0149] In addition, in the embodiment, the thickness of the first - sixth reflective layers 222q can be greater than the thickness of the first - fifth reflective layers 222p. In addition, the thickness of the first - fifth reflective layers 222p or the first - sixth reflective layers 222q can be greater than the thickness of the first - seventh reflective layers 222r or the first - eighth reflective layers 222s.

[0150] At this time, the sixth aluminum concentration of the first - sixth reflective layers 222q can be higher than the fifth aluminum concentration of the first - fifth reflective layers 222p. In addition, the fifth aluminum concentration of the first - fifth reflective layers 222p can be higher than the seventh aluminum concentration of the first - seventh reflective layers 222r or the eighth aluminum concentration of the first - eighth reflective layers 222s.

[0151] Therefore, because the thickness of the first - sixth reflective layers 222q having a relatively high aluminum concentration is thicker than the thickness of the first - fifth reflective layers 222p, the quality of the lattice can be improved and it is helpful for the light output.

[0152] Furthermore, since the thickness of the first-fifth reflective layer 222p, which has a relatively high aluminum concentration, is greater than that of the first-seventh reflective layer 222r or the first-eighth reflective layer 222s, the quality of the lattice can be improved and it is helpful for light output.

[0153] For example, since the thickness of the first to sixth reflective layers 222q can be about 50 to 55 nm, the thickness of the first to fifth reflective layers 222p can be about 40 to 45 nm. Furthermore, the thickness of the first to sixth reflective layers 222q, which has a relatively high aluminum concentration, is thicker than that of the first to fifth reflective layers 222p, which can improve the quality of the lattice and contribute to light output.

[0154] Furthermore, since the thickness of the first to seventh reflective layers 222r can be about 22 to 27 nm, the thickness of the first to eighth reflective layers 222s can also be about 22 to 27 nm. Moreover, the thickness of the first to fifth reflective layers 222p or the first to sixth reflective layers 222q, which have a relatively high aluminum concentration, is thicker than that of the first to seventh reflective layers 222r or the first to eighth reflective layers 222s, which can improve the quality of the lattice and contribute to light output.

[0155] Next, one of the technical problems of the embodiments is to provide a surface-emitting laser device and a light-emitting device including the surface-emitting laser device, which can improve light output by minimizing the effect of carrier barrier caused by the electric field generated in the reflective layer.

[0156] At this time, refer to Figure 3 In the surface-emitting laser device according to the embodiment, a location-dependent light energy distribution E is shown. The light energy distribution becomes lower as the distance from the active region 230 increases. In the embodiment, taking into account the light energy distribution, the concentration of the first conductive dopant in the first set of first reflective layers 221 can be controlled to be higher than the concentration of the dopant in the second set of first reflective layers 222.

[0157] For example, in an embodiment, the dopant concentration in the first set of first reflective layers 221 can be approximately 2.00E18, and the dopant concentration in the second set of first reflective layers 222 can be controlled at approximately 1.00E18. In an embodiment, the concentration unit E18 can mean 10 18 (atoms / cm) 3 For example, a concentration of 1.00E18 can mean 1.00 x 10⁻⁶. 18 (atoms / cm) 3 Furthermore, a concentration of 1.00E17 can mean 1.00 x 10⁻⁶. 17 (atoms / cm) 3 ).

[0158] In the embodiments, the n-type dopant may be silicon (Si), but is not limited thereto.

[0159] In this way, the embodiment controls the concentration of the first conductive dopant in the second group of first reflective layers 222, where the light energy distribution is relatively high, to be lower than the concentration of the dopant in the first group of first reflective layers 221, where the first conductive dopant is relatively highly doped in the region of the first group of first reflective layers 221 where the light energy is relatively low. This minimizes the light absorption of the dopant in the second group of first reflective layers 222 and improves the light output. In the first group of first reflective layers 221, the voltage efficiency is improved by improving the resistance of the relatively high dopant. Therefore, it has the specific technical effect of providing a surface-emitting laser device and a light-emitting device including the same, which can simultaneously improve both light output and voltage efficiency.

[0160] Next, Figure 4E It is relative to the third region P. Figure 4C The third data is the refractive index n of the second reflective layer 250 of the surface-emitting laser device according to the embodiment shown.

[0161] refer to Figure 4E In an embodiment, the second reflective layer 250 may include a first group of second reflective layers 251 and a second group of second reflective layers 252.

[0162] At this time, the first group of second reflective layers 251 may include multiple layers, such as second-first reflective layer 251p, second-second reflective layer 251q, second-third reflective layer 251r, and second-fourth reflective layer 251s.

[0163] In an embodiment, when the second-first reflective layer 251p to the second-fourth reflective layer 251s are formed as a pair, the first group of second reflective layers 251 may include multiple pairs. For example, in an embodiment, the first group of second reflective layers 251 may include approximately two to five pairs of second-first reflective layers 251p to the second-fourth reflective layers 251s.

[0164] In addition, the second set of second reflective layers 252 may include multiple layers, such as second-fifth reflective layers 252p, second-sixth reflective layers 252q, second-seventh reflective layers 252r, and second-eighth reflective layers 252s.

[0165] Furthermore, when the second-fifth reflective layers 252p to the second-eighth reflective layers 252s are formed as a pair, the second group of second reflective layers 252 may include multiple pairs. For example, in an embodiment, when the second-fifth reflective layers 252p to the second-eighth reflective layers 252s are formed as a pair, the second group of second reflective layers 252 may include approximately 10 to 20 pairs.

[0166] One of the technical problems of the embodiments is to provide a surface-emitting laser device and a light-emitting device including the surface-emitting laser device, which can improve the light output by minimizing the influence of the carrier barrier caused by the generation of an electric field in the reflection layer.

[0167] Reference Figure 4E , in an embodiment, the first set of second reflection layers 251 may include a second-first reflection layer 251p, a second-second reflection layer 251q, a second-third reflection layer 251r, and a second-fourth reflection layer 251s, and each layer may have a different refractive index.

[0168] For example, the first set of second reflection layers 251 may include a second-first reflection layer 251p having a first refractive index, a second-second reflection layer 251q having a second refractive index lower than the first refractive index and disposed on one side of the second-first reflection layer 251p, and a second-third reflection layer 251r having a third refractive index between the first refractive index and the second refractive index and disposed between the second-first reflection layer 251p and the second-second reflection layer 251q.

[0169] For example, the first set of second reflection layers 251 may include a second-first reflection layer 251p having a first aluminum concentration, a second-second reflection layer 251q having a second aluminum concentration higher than the first aluminum concentration and disposed on one side of the second-first reflection layer 251p, and a second-third reflection layer 251r having a third aluminum concentration varying from the first aluminum concentration to the second aluminum concentration and disposed between the second-first reflection layer 251p and the second-second reflection layer 251q.

[0170] For example, when the first set of second reflection layers 251 includes Al x Ga (1-x) As (0 < x < 1), the second-first reflection layer 251p may be Al 0.12 Ga 0.88 As, the second-second reflection layer 251q may be Al 0.88 Ga 0.12 As, and the second-third reflection layer 251r may be Al 0.88 Ga 0.12 As (0.12 ≤ x3 ≤ 0.88), but not limited thereto.

[0171] In addition, the first set of second reflection layers 251 may further include a second-fourth reflection layer 251s, which is disposed outside the second-second reflection layer 251q and has a fourth aluminum concentration varying from the first aluminum concentration to the second aluminum concentration.

[0172] For example, when the first set of second reflection layers 251 includes Al x Ga(1-x) When As(0 < x < 1), the second - fourth reflective layers 251s can be Al x4 Ga (1-x4) As(0.12 ≤ x4 ≤ 0.88), but not limited thereto.

[0173] Thus, according to the embodiment, by providing the second - third reflective layer 251r or the second - fourth reflective layer 251s having an intermediate aluminum concentration between the adjacent second - first reflective layer 251p and the second - second reflective layer 251q, the generation of an electric field due to band bending can be minimized at the interface between adjacent reflective layers and the carrier barrier can be reduced, and thus there is a technical effect of improving the light output.

[0174] Therefore, according to the embodiment, it is possible to provide a surface - emitting laser device and a light - emitting device including the surface - emitting laser device, which can improve the light output by minimizing the influence of the carrier barrier caused by the generation of an electric field in the reflective layer.

[0175] In addition, in the embodiment, the thickness of the second - second reflective layer 251q can be greater than the thickness of the second - first reflective layer 251p. In addition, the thickness of the second - first reflective layer 251p or the second - second reflective layer 251q can be greater than the thickness of the second - third reflective layer 251r or the second - fourth reflective layer 251s.

[0176] At this time, the second aluminum concentration of the second - second reflective layer 251q can be higher than the first aluminum concentration of the second - first reflective layer 251p. In addition, the first aluminum concentration of the second - first reflective layer 251p can be higher than the third aluminum concentration of the second - third reflective layer 251r or the fourth aluminum concentration of the second - fourth reflective layer 251s.

[0177] Therefore, since the thickness of the second - second reflective layer 251q having a relatively high aluminum concentration is thicker than the thickness of the second - first reflective layer 251p, the quality of the lattice can be improved and it helps the light output.

[0178] In addition, since the thickness of the second - first reflective layer 251p having a relatively high aluminum concentration is thicker than the thickness of the second - third reflective layer 251r or the second - fourth reflective layer 251s, the quality of the lattice can be improved and it helps the light output.

[0179] For example, since the thickness of the second - second reflective layer 251q can be about 50 to 55 nm, the thickness of the second - first reflective layer 251p can be about 26 to 32 nm, and the thickness of the second - second reflective layer 251q having a relatively high aluminum concentration is thicker than the thickness of the second - first reflective layer 251p, the quality of the lattice can be improved and it helps the light output.

[0180] In addition, since the thickness of the second-third reflective layer 251r can be about 22 to 27 nm, the thickness of the second-fourth reflective layer 251s can be about 22 to 27 nm, and the thickness of the second-second reflective layer 251q or the second-first reflective layer 251p having a relatively high aluminum concentration is thicker than the thickness of the second-third reflective layer 251r or the second-fourth reflective layer 251s, which can improve the quality of the crystal lattice and contribute to the light output.

[0181] Continuously, referring to Figure 4E , in the embodiment, the second group of second reflective layers 252 may include a second-fifth reflective layer 252p, a second-sixth reflective layer 252q, a second-seventh reflective layer 252r, and a second-eighth reflective layer 252s, and each layer may have a different refractive index.

[0182] For example, the second group of second reflective layers 252 may include a second-fifth reflective layer 252p having a fifth refractive index; a second-sixth reflective layer 252q having a sixth refractive index lower than the fifth refractive index and disposed on one side of the second-fifth reflective layer 252p; and a second-seventh reflective layer 252r having a seventh refractive index between the fifth refractive index and the sixth refractive index and disposed between the second-fifth reflective layer 252p and the second-sixth reflective layer 252q.

[0183] For example, the second group of second reflective layers 252 may include a second-fifth reflective layer 252p having a fifth aluminum concentration; a second-sixth reflective layer 252q having a sixth aluminum concentration higher than the fifth aluminum concentration and disposed on one side of the second-fifth reflective layer 252p; and a second-seventh reflective layer 252r having a seventh aluminum concentration varying from the fifth aluminum concentration to the sixth aluminum concentration and disposed between the second-fifth reflective layer 252p and the second-sixth reflective layer 252q.

[0184] For example, when the second group of second reflective layers 252 includes Al x Ga (1-x) As (0 < x < 1), the second-fifth reflective layer 252p may be Al 0.12 Ga 0.88 As, the second-sixth reflective layer 252q may be Al 0.88 Ga 0.12 As, and the second-seventh reflective layer 252r may be Al x3 Ga (1-x3) As (0.12 ≤ x3 ≤ 0.88), but not limited thereto.

[0185] In addition, the second group of second reflective layers 252 may further include second - eighth reflective layers 252s, which are disposed outside the second - sixth reflective layers 252q and have an eighth aluminum concentration that varies from a fifth aluminum concentration to a sixth aluminum concentration.

[0186] For example, when the second group of second reflective layers 252 includes Al x Ga (1-x) As (0 < x < 1), the second - eighth reflective layers 252s may be Al x4 Ga (1-x4) As (0.12 ≤ x4 ≤ 0.88), but not limited thereto.

[0187] Thus, according to the embodiment, by providing a second - seventh reflective layer 252r or a second - eighth reflective layer 252s having an intermediate aluminum concentration between adjacent second - fifth reflective layers 252p and second - sixth reflective layers 252q, the generation of an electric field due to band bending at the interface between adjacent reflective layers can be minimized, and the carrier barrier can be reduced, and thus there is a technical effect that the light output can be improved.

[0188] Therefore, according to the embodiment, it is possible to provide a surface - emitting laser device and a light - emitting device including the surface - emitting laser device, which can improve the light output by minimizing the influence of the carrier barrier caused by the generation of an electric field in the reflective layer.

[0189] In addition, in the embodiment, the thickness of the second - sixth reflective layer 252q may be greater than the thickness of the second - fifth reflective layer 252p. In addition, the thickness of the second - fifth reflective layer 252p or the second - sixth reflective layer 252q may be greater than the thickness of the second - seventh reflective layer 252r or the second - eighth reflective layer 252s.

[0190] At this time, the sixth aluminum concentration of the second - sixth reflective layer 252q may be higher than the fifth aluminum concentration of the second - fifth reflective layer 252p. In addition, the fifth aluminum concentration of the second - fifth reflective layer 252p may be higher than the seventh aluminum concentration of the second - seventh reflective layer 252r or the eighth aluminum concentration of the second - eighth reflective layer 252s.

[0191] Therefore, since the thickness of the second - sixth reflective layer 252q having a relatively high aluminum concentration is thicker than the thickness of the second - fifth reflective layer 252p, the quality of the lattice can be improved and it helps with the light output.

[0192] In addition, since the thickness of the second - fifth reflective layer 252p having a relatively high aluminum concentration is thicker than the thickness of the second - seventh reflective layer 252r or the second - eighth reflective layer 252s, the quality of the lattice can be improved and it helps with the light output.

[0193] For example, since the thickness of the second to sixth reflective layers 252q can be about 50 to 55 nm, the thickness of the second to fifth reflective layers 252p can be about 40 to 45 nm. Furthermore, the thickness of the second to sixth reflective layers 252q, which has a relatively high aluminum concentration, is greater than that of the second to fifth reflective layers 252p, which can improve the quality of the lattice and contribute to light output.

[0194] Furthermore, since the thickness of the second to seventh reflective layers 252r can be about 22 to 27 nm, the thickness of the second to eighth reflective layers 252s can also be about 22 to 27 nm. Moreover, the thickness of the second to sixth reflective layers 252q or the second to fifth reflective layers 252p, which have a relatively high aluminum concentration, is thicker than that of the second to seventh reflective layers 252r or the second to eighth reflective layers 252s, which can improve the quality of the lattice and contribute to light output.

[0195] Next, one of the technical problems of the embodiments is to provide a surface-emitting laser device and a light-emitting device including the surface-emitting laser device, which can improve light output by minimizing the effect of carrier barrier caused by the electric field generated in the reflective layer.

[0196] At this time, refer to Figure 3 In the surface-emitting laser device according to the embodiment, a location-dependent light energy distribution E is shown. The light energy distribution becomes lower as the distance from the active region 230 increases. In the embodiment, taking into account the light energy distribution, the concentration of the first conductive dopant in the first set of second reflective layers 251 can be controlled to be higher than the concentration of the dopant in the second set of second reflective layers 252.

[0197] For example, in an embodiment, the dopant concentration in the first group of second reflective layers 251 can be from approximately 7.00E17 to 1.50E18, and the dopant concentration in the second group of second reflective layers 252 can be controlled to be from approximately 1.00E18 to 3.00E18. In an embodiment, the concentration unit 1.00E18 can mean 1.00 x 10⁻⁶. 18 (atoms / cm) 3 In the embodiments, the p-type dopant may be carbon (C), but is not limited thereto.

[0198] In this way, the embodiment controls the concentration of the second conductive dopant in the second set of second reflective layers 252 to be higher than the concentration of the dopant in the first set of second reflective layers 251. The second conductive dopant is relatively lightly doped in the region of the first set of second reflective layers 251 where the light energy is relatively high. This minimizes the light absorption of the dopant in the first set of second reflective layers 251 and improves the light output. In the second set of second reflective layers 252, the voltage efficiency is improved by the improved resistance of the relatively high dopant. Therefore, it has the specific technical effect of providing a surface-emitting laser device that can simultaneously improve light output and voltage efficiency, and a light-emitting device including the surface-emitting laser device.

[0199] Furthermore, according to existing technology, it is possible to absorb standing waves at the interface with the DBR using such dopants. Therefore, in the embodiments, a large amount of doping is performed at the node location where the optical power reflectivity of the standing wave is minimal to minimize resistance, and at the antinodes, the doping is performed as little as possible, thus achieving the technical effect of minimizing light absorption. A node location can refer to the point where the refractive index of each layer changes by increasing or decreasing.

[0200] Continuously, reference Figure 4E The refractive indices of the second-first reflective layer 251p and the second-second reflective layer 251q in the first group of second reflective layers 251 can be at antinode positions, which do not change to apex or trough points. Furthermore, the refractive indices of the second-third reflective layer 251r and the second-fourth reflective layer 251s in the first group of second reflective layers 251 can be at nodal positions that change by rising or falling.

[0201] Therefore, in the embodiments, the second conductive doping concentration of the second-third reflective layer 251r or the second-fourth reflective layer 251s can be controlled to be higher than the second conductive doping concentration of the second-first reflective layer 251p or the second-second reflective layer 251q.

[0202] For example, the second conductive doping concentration of the second-third reflective layer 251r or the second-fourth reflective layer 251s can be about 1.00E18 to 1.50E18, and the second conductive doping concentration of the second-first reflective layer 251p or the second-second reflective layer 251p can be about 6.00E17 to 8.00E17.

[0203] Therefore, in the second-third reflective layer 251r or the second-fourth reflective layer 251s, which are nodes with low optical power reflectivity of the standing wave, a large amount of doping is carried out to minimize the resistance, and in the second-first reflective layer 251p or the second-second reflective layer 251q, which are antinodes, low doping is carried out, and thus there is a complex technical effect that can minimize light absorption.

[0204] Furthermore, in the embodiments, in the second-third reflective layer 251r or the second-fourth reflective layer 251s which are node locations, the concentration of the second conductive dopant in the second-fourth reflective layer 251s which is a node location where the refractive index increases in the direction away from the active region 230 can be controlled to be higher than the concentration of the second conductive dopant in the second-third reflective layer 251r which is a node location where the refractive index decreases.

[0205] In this way, the concentration of the second conductive dopant in the second-to-fourth reflective layers 251s, which are node locations with relatively low optical reflectivity and increased refractive index, can be controlled to be high to improve electrical properties.

[0206] For example, the second conductive doping concentration of the second-fourth reflective layer 251s can be about 1.50E18, the second conductive doping concentration of the second-third reflective layer 251r can be about 1.00E18, and the second conductive doping concentration in the second-fourth reflective layer 251s with relatively low optical reflectivity can be controlled to be high to improve electrical properties.

[0207] Continuously, reference Figure 4E The refractive indices of the second to fifth reflective layers 252p and the second to sixth reflective layers 252 in the second group of second reflective layers 252 can be at antinode positions, which do not change to apex or trough points. Furthermore, the refractive indices of the second to seventh reflective layers 252r and the second to eighth reflective layers 252 in the second group of second reflective layers 252 can be at nodal positions that change by rising or falling.

[0208] In an embodiment, the second conductive doping concentration of the second-seventh reflective layer 252r or the second-eighth reflective layer 252s can be controlled to be higher than the second conductive doping concentration of the second-fifth reflective layer 252p or the second-sixth reflective layer 252q.

[0209] For example, the second conductive doping concentration of the second-seventh reflective layer 252r or the second-eighth reflective layer 252s can be about 2.00E18 to 3.00E18, and the second conductive doping concentration of the second-fifth reflective layer 252p or the second-sixth reflective layer 252q can be about 1.00E18 to 1.50E18.

[0210] Therefore, in the second-seventh reflective layer 252r or the second-eighth reflective layer 252s, which are nodes with low optical power reflectivity of the standing wave, a large amount of doping is carried out to minimize the resistance, and in the second-fifth reflective layer 252p or the second-sixth reflective layer 252q, which are antinodes, low doping is carried out, and thus there is a complex technical effect that can minimize light absorption.

[0211] Furthermore, in the embodiments, in the second-seventh reflective layer 252r or the second-eighth reflective layer 252s, the concentration of the second conductive dopant in the second-eighth reflective layer 252s, which is a node position where the refractive index increases in the direction away from the active region 230, can be controlled to be higher than the concentration of the second conductive dopant in the second-seventh reflective layer 252r, which is a node position where the refractive index decreases.

[0212] In this way, the concentration of the second conductive dopant in the second to eighth reflective layers 252s, which are node locations with relatively low optical reflectivity and increased refractive index, can be controlled to be high to improve electrical properties.

[0213] For example, the second conductive doping concentration of the second-eighth reflective layers 252s can be about 3.00E18, the second conductive doping concentration of the second-seventh reflective layers 252r can be about 2.00E18, and the concentration of the second conductive dopant in the second-eighth reflective layers 252s, which have relatively low optical reflectivity, can be controlled to be high to improve electrical properties.

[0214] Next, Figure 4F The data are secondary ion mass spectrometry (SIMS) data of the second reflective layer of the surface-emitting laser device according to the embodiment, and Figure 4G yes Figure 4F A magnified view of region P2.

[0215] refer to Figure 4G In one embodiment, the second reflective layer 250 may include a first group of second reflective layers 251 and a second group of second reflective layers 252. The first group of second reflective layers 251 is closer to the aperture region 240 than the second group of second reflective layers 252.

[0216] For example, the first group of second reflective layers 251 may include a first-first layer 251a having a first aluminum concentration, a first-second layer 251b having a second aluminum concentration higher than the first aluminum concentration and disposed on the first-first layer 251a, and a first-fourth layer 251d having a second aluminum concentration varying from the second aluminum concentration to the first aluminum concentration and disposed on the first-second layer 251b.

[0217] Furthermore, the first-second layer 251b is arranged between the first-first layer 251a and the first-fourth layer 251d. The first-first layer 251a is closer to the aperture region 240 than the first-second layer 251b.

[0218] In addition, the first group of second reflective layers 251 may also include second-fourth reflective layers 251s, which are disposed outside the second-second reflective layers 251q and have a fourth aluminum concentration that varies from the first aluminum concentration to the second aluminum concentration.

[0219] In addition, the first group of second reflective layers 251 may include a first-third layer 251c disposed between the first-second layer 251b and the first-fourth layer 251d.

[0220] Furthermore, in this embodiment, the second reflective layer 250 may be doped with a second conductive dopant. In this embodiment, the p-type dopant may be carbon (C), but is not limited thereto.

[0221] Furthermore, in the embodiments, the second conductive doping concentration of the first to fourth layers 251d can be higher than the second conductive doping concentration of the first to first layers 251a and / or the first to second layers 251b.

[0222] Therefore, in the first to fourth layers 251d, where the optical power reflectivity of the standing wave is low, a large amount of doping is carried out to minimize the resistance and improve the electrical characteristics.

[0223] Furthermore, in the first-first layer 251a, which serves as the antinode position of other layers, low doping is performed, and thus there is a sophisticated technical effect that minimizes light absorption.

[0224] Also refer to Figure 4G In an embodiment, the second set of second reflective layers 252 may include a second-first layer 252a having a first aluminum concentration; a second-second layer 252b having a second aluminum concentration higher than the first aluminum concentration and disposed on the second-first layer 252a; and a second-fourth layer 252d having a fourth aluminum concentration varying from the second aluminum concentration to the first aluminum concentration and disposed on the second-second layer 252b.

[0225] Furthermore, the second-second layer 252b is arranged between the second-first layer 252a and the second-fourth layer 252d. The second-first layer 252a is closer to the aperture region 240 than the second-second layer 252b.

[0226] In addition, the second set of second reflective layers 252 may include a second-third layer 252c disposed between the second-second layer 252b and the second-fourth layer 252d.

[0227] Furthermore, in the embodiments, the second conductive doping concentration of the second to fourth layers 252d may be higher than the second conductive doping concentration of the second-first layer 252a and / or the second-second layer 252b.

[0228] Therefore, extensive doping is performed in the second to fourth layers 252d at node locations with low optical power reflectivity of standing waves to minimize resistance and improve electrical characteristics.

[0229] Furthermore, in the second-first layer 252a, which serves as the antinode position of other layers, low doping is performed, and thus there is a sophisticated technical effect that minimizes light absorption.

[0230] Again, refer to Figure 4G In one embodiment, the second reflective layer 250 may include a third group of second reflective layers 253 disposed in the third region P3. The third group of second reflective layers 253 is closer to the aperture region 240 than the first group of second reflective layers 251. Two or three third groups of second reflective layers 253 can be disposed in the third region P3.

[0231] Furthermore, in the embodiment, the average second conductive doping concentration of the third group of second reflective layers 253 may be less than the average second conductive doping concentration of the first group of second reflective layers 251 arranged in the second region P2.

[0232] Furthermore, the third group of second reflective layers 253 near the aperture region 240 is lightly doped, and thus there is a sophisticated technical effect that minimizes light absorption.

[0233] Furthermore, in the first set of second reflective layers 251 and / or the second set of second reflective layers 252, which are far from the aperture region 240 and have low optical power reflectivity of the standing wave, a large amount of doping is performed to minimize resistance and improve electrical characteristics.

[0234] Table 2 below shows chip feature data in the prior art (comparative example) and embodiments.

[0235] According to the embodiments, as shown in Table 2, it can be seen that light output, voltage characteristics, etc. are significantly improved.

[0236] [Table 2]

[0237]

[0238] Next, refer to Figure 3 In the surface-emitting laser device according to the embodiment, a location-dependent light energy distribution is shown. As described above, the light energy distribution becomes lower as it becomes relatively farther away from the active region 230. In the embodiment, the concentration of the first conductive dopant in the first set of first reflective layers 221 can be controlled to be higher than the concentration of the dopant in the second set of first reflective layers 222.

[0239] For example, refer to Figure 2 In an embodiment, the first reflective layer 220 may include a first set of first reflective layers 221 arranged on one side of the active region 230 and a second set of first reflective layers 222 arranged closer to the active region 230 than the first set of first reflective layers 221.

[0240] At this time, the light energy in the second group of first reflective layers 222 arranged adjacent to the active region 230 becomes higher than the light energy in the first group of first reflective layers 221.

[0241] Considering the light energy distribution, the embodiment controls the concentration of the first conductive dopant in the second group of first reflective layers 222 to be lower than the concentration of the dopant in the first group of first reflective layers 221. The first conductive dopant is relatively highly doped in the region of the first group of first reflective layers 221 where the light energy is relatively low, so that the light absorption of the dopant in the second group of first reflective layers 222 is minimized and the light output is also improved. In the first group of first reflective layers 221, the voltage efficiency is improved by the improved resistance of the relatively high dopant. Therefore, it has the specific technical effect of being able to provide a surface-emitting laser device that can simultaneously improve light output and voltage efficiency and a light-emitting device including the surface-emitting laser device.

[0242] For example, the dopant concentration in the first set of first reflective layers 221 may be about 2.00E18, and the dopant concentration in the second set of first reflective layers 222 may be about 1.00E18, but is not limited thereto. Furthermore, in embodiments, the second reflective layer 250 may include a first set of second reflective layers 251 arranged adjacent to the active region 230 and a second set of second reflective layers 252 arranged spaced apart from the active region 230 but not from the first set of second reflective layers 251.

[0243] At this time, the light energy in the first group of second reflective layers 251 arranged adjacent to the active region 230 becomes higher than the light energy in the second group of second reflective layers 252.

[0244] In this way, taking into account the light energy distribution, the embodiment controls the concentration of the second conductive dopant in the first group of second reflective layers 251 to be lower than the concentration of the dopant in the second group of second reflective layers 252. The second conductive dopant is relatively highly doped in the region of the second group of second reflective layers 252 where the light energy is relatively low, so that in the first group of second reflective layers 251, the light absorption of the dopant is minimized and the light output is also improved, and in the second group of second reflective layers 252, the voltage efficiency is improved by the improved resistance of the dopant, and thus has the specific technical effect of being able to provide a surface-emitting laser device that can simultaneously improve light output and voltage efficiency and a light-emitting device including the surface-emitting laser device.

[0245] <Active Zone>

[0246] See you again Figure 2 An embodiment may include an active region 230 on the first reflective layer 220.

[0247] The active region 230 may include an active layer 232, a first cavity 231 disposed below the active layer 232, and a second cavity 233 disposed thereon. The active region 230 of the embodiment may include the first cavity 231 and the second cavity 233, or may include only one of them.

[0248] The active region 230 may be disposed between the first reflective layer 220 and the second reflective layer 250. The active region 230 of the embodiment may include an active layer 232 of any one of a single well structure, a multi-well structure, a single quantum well structure, a multi-quantum well (MQW) structure, a quantum dot structure, and a quantum wire structure.

[0249] The active layer 232 may be formed of a quantum well layer 232a and a barrier layer 232b using a compound semiconductor material of group III-V elements. For example, a structure of one to three pairs, such as InGaAs / Al x GaAs, AlGaInP / GaInP, AlGaAs / AlGaAs, AlGaAs / GaAs, and GaAs / InGaAs, but not limited thereto. The quantum well layer 232a may be formed of a material having a band gap smaller than that of the quantum barrier layer 232b. The active layer 232 may not be doped with a dopant.

[0250] The first cavity 231 and the second cavity 233 may be formed of Al y Ga (1-y) As (0 < y < 1), but not limited thereto. For example, the first cavity 231 and the second cavity 233 may each include a plurality of Al y Ga (1-y) As As layers.

[0251] In an embodiment, an insulating region 242 is disposed on the active region 230, and there is an aperture 241 defined by the insulating region 242.

[0252] The insulating region 242 may be formed of an insulating layer such as alumina and may be used as a current insulating region, and the aperture 241 as a non-insulating layer may be disposed in the central region. The aperture 241 and the insulating region 242 may be referred to as an aperture region 240.

[0253] Specifically, the aperture region 240 may include aluminum gallium arsenide. At this time, the insulating region 242 may be formed because AlGaAs in the aperture region 240 reacts with H2O and its edge becomes alumina (Al2O3), and the central region that does not react with H2O may be the aperture 241 made of AlGaAs.

[0254] The insulating region 242 may include multiple layers, for example, a first insulating layer 242a and a second insulating layer 242b. The thickness of the first insulating layer 242a may be formed to be the same or different.

[0255] According to an embodiment, light emitted from the active region 230 may be emitted to the upper region through the aperture 241, and the light transmittance of the aperture 241 may be higher than that of the insulating region 242.

[0256] <Second reflective layer>

[0257] The second reflective layer 250 may be disposed on the aperture region 240 including the insulating region 242.

[0258] The second reflective layer 250 may include a gallium-based compound such as AlGaAs, and the second reflective layer 250 may be doped with a second conductive dopant. For example, the second conductive dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, and Ba. At the same time, the first reflective layer 220 may be doped with a p-type dopant, and the second reflective layer 250 may be doped with an n-type dopant.

[0259] The second reflective layer 250 may be a distributed Bragg reflector (DBR). For example, the second reflective layer 250 may be a structure in which multiple layers made of materials with different refractive indices are alternately stacked at least once.

[0260] Each layer of the second reflective layer 250 may include AlGaAs, and specifically, may be made of a semiconductor material having a composition formula of Al x Ga (1-x) As (0 < x < 1). Here, when Al increases, the refractive index of each layer may decrease, and when Ga increases, the refractive index of each layer may increase. In addition, the thickness of each layer of the second reflective layer 250 may be λ / 4n, where λ may be the wavelength of light emitted from the active layer, and n may be the refractive index of each layer with respect to the light of the above wavelength.

[0261] The second reflective layer 250 having such a structure may have a reflectivity of 99.9% with respect to light in the wavelength region of 940 nm.

[0262] The second reflective layer 250 may be formed by alternately stacking layers, and the number of layer pairs in the first reflective layer 220 may be greater than the number of layer pairs in the second reflective layer 250. In this regard, as described above, the reflectivity of the first reflective layer 220 is about 99.999%, which may be greater than the reflectivity of the second reflective layer 250, 99.9%.

[0263] In an embodiment, the second reflective layer 250 may include a first group of second reflective layers 251 arranged adjacent to the active region 230 and a second group of second reflective layers 252 arranged to be separated from the active region 230 rather than from the first group of second reflective layers 251.

[0264] As described above, the concentration of the first conductive dopant in the first group of second reflective layers 251 can be lower than the concentration of the dopant in the second group of second reflective layers 252.

[0265] For example, the first group of second reflective layers 251 may include approximately one to five pairs of first group second-first layers 251a and first group second-second layers 251b. The first group of second-first layers 251a may be formed to be thicker than the first group of second-second layers 251b. For example, the first group of second-first layers 251a may be formed to have a thickness of about 40 to 60 nm, and the first group of second-second layers 251b may be formed to have a thickness of about 20 to 30 nm.

[0266] Furthermore, the second set of second reflective layers 252 may include approximately 5 to 15 pairs of second set of second-first layers 252a and second set of second-second layers 252b. The second set of second-first layers 252a may be formed thicker than the second set of second-second layers 252b. For example, the second set of second-first layers 252a may be formed to a thickness of approximately 40 to 60 nm, and the second set of second-second layers 252b may be formed to a thickness of approximately 20 to 30 nm.

[0267] <Second contact electrode, passivation layer, second electrode>

[0268] refer to Figure 1 According to an embodiment, the surface-emitting laser device 200 can perform mesa etching from the second reflective layer 250 to the insulating region 242 and the active region 230 in the region surrounding the aperture 241. Furthermore, mesa etching can be performed up to a portion of the first reflective layer 220.

[0269] The second contact electrode 255 can be disposed on the second reflective layer 250 such that the exposed area of ​​the second reflective layer 250 between the second contact electrodes 255 corresponds to the aperture 241 in the central region of the aforementioned insulating region 242. Here, the width of the aperture 241 can be wider or narrower than the width between the second contact electrodes 255. When the width of the aperture 241 is narrower than the width between the second contact electrodes 255, light emitted from the active region 230 can be diffused and transmitted, and when the width of the aperture 241 is wider than the width between the second contact electrodes 255, light emitted from the active region 230 can be focused and transmitted. The second contact electrode 255 can improve the contact characteristics between the second reflective layer 250 and the second electrode 280, which will be described later.

[0270] exist Figure 1 In this process, the passivation layer 270 can be disposed on the side and top surfaces of the mesa-etched light-emitting structure, and on the top surface of the first reflective layer 220. The passivation layer 270 can also be disposed on the side surfaces of the surface-emitting laser devices 200 separated into device units to protect and isolate the surface-emitting laser devices 200. The passivation layer 270 can be made of an insulating material such as a nitride or oxide.

[0271] The passivation layer 270 may be thinner than the second contact electrode 255 on the upper surface of the light-emitting structure, such that the second contact electrode 255 may be exposed above the passivation layer 270. The second electrode 280 may be arranged to make electrical contact with the exposed second contact electrode 255, and the second electrode 280 may extend above the passivation layer 270 to receive current from the outside.

[0272] The second electrode 280 may be made of a conductive material such as a metal. For example, the second electrode 280 may be formed of a single-layer or multi-layer structure, which includes at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (AU).

[0273] <Manufacturing Method>

[0274] In the following text, reference will be made to Figures 5 to 8 A method for manufacturing a surface-emitting laser device according to an embodiment is described.

[0275] First, such as Figure 5 As shown, a light-emitting structure including a first reflective layer 220, an active region 230, and a second reflective layer 250 is formed on the first substrate 210.

[0276] The first substrate 210 may be formed of a material suitable for growing semiconductor materials or carrier wafers. The first substrate 210 may be formed of a material with excellent thermal conductivity and may include a conductive substrate or an insulating substrate.

[0277] For example, in one embodiment, a GaAs substrate of the same type as the first reflective layer 220 can be used as the first substrate 210. When the first substrate 210 and the first reflective layer 220 are of the same type, their lattice constants match, so that defects such as lattice mismatch do not occur in the first reflective layer 220.

[0278] The first reflective layer 220 may be a structure in which layers formed of materials with different refractive indices are stacked alternately at least once.

[0279] Because the first reflective layer 220 can have the DBR structure described above, AlGaAs can be supplied and grown. In this case, AlGaAs can be grown by varying the supply amounts of Al and Ga. x Ga(1-x) A first reflective layer 220 of a semiconductor material having a composition formula of As(0 < x < 1).

[0280] For example, the first reflective layer 220 can be grown by using methods such as chemical vapor deposition (CVD), molecular beam epitaxy (MBE), sputtering, or hydride vapor phase epitaxy (HVPE).

[0281] The first reflective layer 220 can be doped with a first conductivity type. For example, the first conductive dopant can include n-type dopants such as Si, Ge, Sn, Se, and Te.

[0282] In addition, the first reflective layer 220 can include a gallium-based compound. For example, AlGaAs, but not limited thereto. The first reflective layer 220 can be a distributed Bragg reflector (DBR). For example, the first reflective layer 220 can be a structure in which layers formed of materials having different refractive indices are alternately stacked at least once.

[0283] Next, an active region 230 can be formed on the first reflective layer 220.

[0284] The active region 230 can include an active layer 232, a first cavity 231 disposed below the active layer 232, and a second cavity 233 disposed thereon. The active region 230 of the embodiment can include the first cavity 231 and the second cavity 233, or can include only one of them.

[0285] For example, the active layer 232 can include any one of a single-well structure, a multi-well structure, a single quantum well structure, a multi-quantum well (MQW) structure, a quantum dot structure, and a quantum wire structure.

[0286] Then, a pre-aperture region 245 can be formed on the active region 230.

[0287] The pre-aperture region 245 can be made of a conductive material and can be made of the same material as the first reflective layer 220 and the second reflective layer 250, but not limited thereto.

[0288] When the pre-aperture region 245 includes AlGaAs, the pre-aperture region 245 can be formed of a semiconductor material having a composition formula of Al x Ga (1-x) As(0 < x < 1). For example, it can have a composition formula of Al 0.98 Ga 0.02 As.

[0289] Then, a second reflective layer 250 can be formed on the pre-aperture region 245.

[0290] The second reflective layer 250 may be doped with a second conductivity type. The second reflective layer 250 may include a gallium-based compound, such as AlGaAs, but is not limited thereto.

[0291] The second reflective layer 250 may be a distributed Bragg reflector (DBR). For example, the second reflective layer 250 may be a structure in which layers formed of materials having different refractive indices are alternately stacked at least once. For example, the second reflective layer 250 may include AlGaAs, and specifically, may be made of a semiconductor material having a composition formula of Al x Ga (1-x) As (0 < x < 1).

[0292] In addition, the thickness of each layer of the second reflective layer 250 may be λ / 4n, where λ may be the wavelength of light emitted from the active region 230, and n may be the refractive index of each layer with respect to the light of the above wavelength. Here, λ may be from 650 to 980 nanometers (nm), and n may be the refractive index of each layer. The second reflective layer 250 having such a structure may have a reflectivity of 99.999% with respect to light in the wavelength region of 940 nm.

[0293] The second reflective layer 250 may include a gallium-based compound such as AlGaAs, and the second reflective layer 250 may be doped with a second conductive dopant. For example, the second conductive dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, Ba, and C. Meanwhile, the first reflective layer 220 may be doped with a p-type dopant, and the second reflective layer 250 may be doped with an n-type dopant.

[0294] The second reflective layer 250 having such a structure may have a reflectivity of 99.9% with respect to light in the wavelength region of 940 nm.

[0295] Then, as Figure 6 [[ID=二十一]]shown, mesa etching may be performed on the light-emitting structure using a predetermined mask 300. At this time, mesa etching may be performed from the second reflective layer 250 to the pre-aperture region 245 and the active region 230, and mesa etching may be performed until a part of the first reflective layer 220. In the mesa etching, the pre-aperture region 245 and the active region 230 may be removed from the second reflective layer 250 in the peripheral region by an inductively coupled plasma (ICP) etching method. In the mesa etching region, the side surface may be etched with a slope.

[0296] Then, as Figure 7 shown, the edge region of the pre-aperture region may be changed to an insulating region 242, and for example, may be changed by wet oxidation.

[0297] For example, when oxygen is supplied from the edge region of the pre-aperture region 245, AlGaAs in the pre-aperture region can react with H2O to form alumina (Al2O3). At this time, by controlling the reaction time, the central region of the pre-aperture region may not react with oxygen, and only the edge region may react with oxygen, thereby forming alumina. Furthermore, the edge region of the pre-aperture region can be transformed into an insulating region 242 through ion implantation, but is not limited to this. During ion implantation, photons can be supplied at an energy level of 300 keV or higher.

[0298] Following the above reaction steps, conductive AlGaAs can be arranged in the central region of aperture region 240, and non-conductive Al2O3 can be arranged in the edge regions. Since the AlGaAs in the central region is the portion from which light emitted from the active region 230 enters the upper region, it can be referred to as aperture 241 as described above.

[0299] Then, as Figure 8 As shown, the second contact electrode 255 can be disposed on the second reflective layer 250 such that the area of ​​the second reflective layer 250 exposed in the region between the second contact electrodes 255 corresponds to the aperture 241, which is the central region of the aperture region 240 described above. The second contact electrode 255 can improve the contact characteristics between the second reflective layer 250 and the second electrode 280, which will be described later.

[0300] Then, the passivation layer 270 disposed on the second contact electrode 255 can be thinner than the second contact electrode 255 on the upper surface of the light-emitting structure, and at this time, the second contact electrode 255 can be exposed above the passivation layer 270.

[0301] The passivation layer 270 may include at least one of polyimide, silicon dioxide (SiO2), and silicon nitride (Si3N4).

[0302] The second electrode 280 can then be arranged to make electrical contact with the exposed second contact electrode 255, and the second electrode 280 can extend over the passivation layer 270 to receive current.

[0303] The second electrode 280 may be made of a conductive material such as a metal. For example, the second electrode 280 may be formed of a single-layer or multi-layer structure, which includes at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (AU).

[0304] The first electrode 215 can be disposed under the first substrate 210. Before disposing the first electrode 215, a portion of the bottom surface of the first substrate 210 can be removed by a predetermined polishing process or the like, thereby improving thermal radiation efficiency.

[0305] The first electrode 215 may be made of a conductive material such as a metal. For example, the first electrode 215 may be formed of a single-layer or multi-layer structure, which includes at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (AU).

[0306] The aforementioned surface-emitting laser device can be a laser diode, and the interior of the two reflective layers can be used as a resonator. In this case, electrons and holes can be supplied to the active layer from the first reflective layer 220 (of a first conductivity type) and the second reflective layer 250 (of a second conductivity type), allowing light emitted from the active region 230 to be reflected and amplified within the resonator. When the threshold current is reached, light can be emitted to the outside through the aforementioned aperture 241.

[0307] The light emitted from the surface-emitting laser device according to the embodiment can be single-wavelength and single-phase light, and the single-wavelength region can vary depending on the composition of the first reflective layer 220, the second reflective layer 250 and the active region 230.

[0308] In addition, see Figures 9 to 14 A method for manufacturing a surface-emitting laser device according to a second embodiment will be described below. In the following description, a process of forming a light-emitting structure on a predetermined growth substrate 190 and then removing the growth substrate 190 has been described in order to improve thermal radiation performance, but the manufacturing method is not limited to this.

[0309] First, such as Figure 9 As shown, a light-emitting structure including a second reflective layer 250, an active region 230 and a first reflective layer 220 is formed on a growth substrate 190.

[0310] The growth substrate 190 can be formed of a material suitable for growing semiconductor materials or carrier wafers. The growth substrate 190 can be formed of a material with excellent thermal conductivity and can include a conductive substrate or an insulating substrate.

[0311] For example, in one embodiment, a GaAs substrate of the same type as the second reflective layer 250 can be used as the growth substrate 190. When the growth substrate 190 and the second reflective layer 250 are of the same type, the lattice constants match, and defects such as lattice mismatch may not occur in the second reflective layer.

[0312] Additionally, an etch stop layer 192 can be formed on the growth substrate 190.

[0313] Then, a second reflective layer 250 can be formed on the growth substrate 190 or the etch stop layer 192.

[0314] The second reflective layer 250 may have a structure in which a third layer (not shown) and a fourth layer (not shown) made of materials with different refractive indices are stacked alternately at least once.

[0315] Since the second reflective layer 250 can have the DBR structure as described above, AlGaAs, which is the material for the third and fourth layers, can be supplied and grown. At this time, by varying the supply amounts of Al and Ga, the second reflective layer 250 of a semiconductor material having a composition formula of Al x Ga (1-x) As (0 < x < 1) can be grown.

[0316] For example, the third layer may include Al 0.88 Ga 0.12 As, the fourth layer can be grown as Al 0.16 Ga 0.84 As, and can be grown by methods of use such as chemical vapor deposition (CVD), molecular beam epitaxy (MBE), sputtering, hydride vapor phase epitaxy (HVPE), etc.

[0317] Then, a pre-aperture region 245 can be formed on the second reflective layer 250. The pre-aperture region 245 can be made of a conductive material and can be made of the same material as the first reflective layer 220 and the second reflective layer 250, but is not limited thereto.

[0318] When the pre-aperture region 245 includes AlGaAs, the pre-aperture region 245 can be formed of a semiconductor material having a composition formula of Al x Ga (1-x) As (0 < x < 1). For example, it can have a composition formula of Al 0.98 Ga 0.02 As.

[0319] Then, the active region 230 and the first reflective layer 220 can be formed on the pre-aperture region 245. The active region 230 can include an active layer 232, a first cavity 231 disposed below the active layer 232, and a second cavity 233 disposed thereon. The active region 230 of the embodiment can include the first cavity 231 and the second cavity 233, or can include only one of the two.

[0320] The active layer 232 can include any one of a single-well structure, a multi-well structure, a single quantum well structure, a multi-quantum well (MQW) structure, a quantum dot structure, and a quantum wire structure.

[0321] The active layer 232 can be formed of a quantum well layer and a quantum barrier layer using a compound semiconductor material of group III-V elements. For example, pair structures such as AlGaInP / GaInP, AlGaAs / AlGaAs, AlGaAs / GaAs, and GaAs / InGaAs, but is not limited thereto. The quantum well layer can be formed of a material having a bandgap smaller than that of the quantum barrier layer.

[0322] The first reflective layer 220 may be doped with a first conductivity type. The first reflective layer 220 may include a gallium-based compound, such as AlGaAs, but is not limited thereto.

[0323] The first reflective layer 220 may be a distributed Bragg reflector (DBR). For example, the first reflective layer 220 may have a structure in which a first layer (not shown) and a second layer (not shown) made of materials having different refractive indices are alternately stacked at least once.

[0324] The first layer and the second layer may include AlGaAs, and in detail, may be made of a semiconductor material having a composition formula of Al x Ga (1-x) As (0 < x < 1). Here, as the Al in the first layer or the second layer increases, the refractive index of each layer may decrease, and as the Ga increases, the refractive index of each layer may increase.

[0325] In addition, the thickness of each of the first layer and the second layer may be λ / 4n, where λ may be the wavelength of the light generated in the active region 230, and n may be the refractive index of each layer with respect to the light of the above wavelength. Here, λ may be from 650 to 980 nanometers (nm), and n may be the refractive index of each layer. The first reflective layer 220 having such a structure may have a reflectivity of 99.999% with respect to the light in the wavelength region of 940 nm.

[0326] The thicknesses of the first layer and the second layer may be determined depending on the corresponding refractive index and wavelength λ of the light emitted in the active region 230.

[0327] The first reflective layer 220 may be doped with a first conductive dopant. For example, the first conductive dopant may include an n-type dopant such as Si, Ge, Sn, Se, and Te.

[0328] Then, as Figure 10 shown, the second substrate 212 may be bonded to the first reflective layer 220. In an embodiment, the second substrate 212 may be bonded to the first reflective layer 220 by inserting an adhesive layer 260.

[0329] The adhesive layer 260 may be formed of a single layer or multiple layers, and may include a first adhesive layer 260a and a second adhesive layer 260b. For example, the second adhesive layer 260b may be disposed at the lower portion of the second substrate 212, the first adhesive layer 260a may be disposed at the upper portion of the first reflective layer 220, and the second adhesive layer 260b and the first adhesive layer 260a may be bonded to each other such that the second substrate 212 and the first reflective layer 220 may be bonded.

[0330] The adhesive layer 260 may include at least one of AuSn, NiSn and InAu.

[0331] The second substrate 212 can be a conductive substrate or a non-conductive substrate. When a conductive substrate is used, a metal with excellent conductivity can be used, and since the heat generated when emitting the laser device 200 on the operating surface should be sufficiently dissipated, a metal or silicon (Si) substrate with high thermal conductivity can be used. When a non-conductive substrate is used, aluminum nitride such as an AlN substrate can be used.

[0332] Then, the first electrode 215 can be disposed on the second substrate 212.

[0333] The first electrode 215 may be made of a conductive material such as a metal. For example, the first electrode 215 may be formed of a single-layer or multi-layer structure, which includes at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (AU).

[0334] Then, as Figure 11 As shown, the growth substrate 190 can be separated. In the case of a sapphire substrate, the growth substrate 190 can be removed by laser lift-off (LLO) using an excimer laser or the like, or by dry or wet etching methods.

[0335] As an example of the laser lift-off method, when an excimer laser with a wavelength in a predetermined region is focused and irradiated in the direction of the growth substrate 190, thermal energy is concentrated at the interface between the growth substrate 190 and the second reflective layer 250, causing the interface between the growth substrate 190 and the second reflective layer 250 to separate into gallium molecules and nitrogen molecules, and the separation of the growth substrate 190 can occur instantaneously at the portion through which the laser passes.

[0336] Here, when the growth substrate 190 is removed from the light-emitting structure, the etch stop layer 192 can protect the second reflective layer 220.

[0337] Then, as Figure 12 As shown, the light-emitting structure can be etched using a predetermined mask 300. Mesa etching can be performed from the second reflective layer 250 to the pre-aperture region 245 and the active region 230, and can be performed up to a portion of the first reflective layer 220. During mesa etching, the aperture region 240 and the active region 230 can be removed from the second reflective layer 250 in the peripheral region using an inductively coupled plasma (ICP) etching method. In the mesa etching region, the side surfaces can be etched with ramps.

[0338] Then, as Figure 13As shown, the edge region of the pre-aperture region can be changed to the insulating region 242, and for example, it can be changed by wet oxidation.

[0339] For example, when oxygen is supplied from the edge region of the pre-aperture region, AlGaAs in the pre-aperture region can react with H2O to form alumina (Al2O3). At this time, by controlling the reaction time, the central region of the pre-aperture region may not react with oxygen, and only the edge region may react with oxygen, thereby forming alumina. Furthermore, the edge region of the pre-aperture region can be transformed into an insulating region 242 through ion implantation, but is not limited to this. During ion implantation, photons can be supplied at an energy level of 300 keV or higher.

[0340] Following the above reaction steps, conductive AlGaAs can be arranged in the central region of aperture region 240, and non-conductive Al2O3 can be arranged in the edge regions. Since the AlGaAs in the central region is the portion from which light emitted from the active region 230 enters the upper region, it can be referred to as aperture 241 as described above.

[0341] Then, as Figure 14 As shown, the second contact electrode 255 can be disposed on the second reflective layer 250 such that the area of ​​the second reflective layer 250 exposed in the region between the second contact electrodes 255 corresponds to the aperture 241, which is the central region of the aperture region 240 described above. The second contact electrode 255 can improve the contact characteristics between the second reflective layer 250 and the second electrode 280, which will be described later.

[0342] Then, the passivation layer 270 disposed on the second contact electrode 255 can be thinner than the second contact electrode 255 on the upper surface of the light-emitting structure, and at this time, the second contact electrode 255 can be exposed on the passivation layer.

[0343] The passivation layer 270 may include at least one of polyimide, silicon dioxide (SiO2), and silicon nitride (Si3N4).

[0344] The second electrode 280 can then be arranged to make electrical contact with the exposed second contact electrode 255, and the second electrode 280 can extend over the passivation layer 270 to receive current.

[0345] The second electrode 280 may be made of a conductive material such as a metal. For example, the second electrode 280 may be formed of a single-layer or multi-layer structure, which includes at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (AU).

[0346] The third to fifth embodiments will then be described.

[0347] Figure 15 is an exemplary view of the energy band diagram 203 in a surface-emitting laser device according to the third embodiment, Figure 16 is an exemplary view of the energy band diagram 204 in a surface-emitting laser device according to the fourth embodiment, Figure 17A and 17B is doping concentration data in the active region of a surface-emitting laser device according to an embodiment. Figure 18 is an exemplary view of the energy band diagram 205 in a surface-emitting laser device according to the fifth embodiment.

[0348] (Third Embodiment)

[0349] Figure 15 is an exemplary view of the energy band diagram 203 in a surface-emitting laser device according to the third embodiment.

[0350] The third embodiment may adopt the technical features of the first and second embodiments.

[0351] For example, referring to Figure 15 , in an embodiment, when the first reflective layer 220 includes Al x Ga (1-x) As (0 < x < 1), the concentration of Al can be graded to minimize the generation of an electric field between adjacent reflective layers.

[0352] For example, when the first reflective layer 220 includes a first layer 220p with a first aluminum concentration and a second layer 220q with a second aluminum concentration, a third layer 220r with a third aluminum concentration can be inserted between the first layer 220p with the first aluminum layer concentration and the second layer 220q with the second aluminum concentration, and the aluminum concentration of the third layer 220r can have a value between the aluminum concentration of the first layer 220p and the aluminum concentration of the second layer 220q.

[0353] For example, the first reflective layer 220 can insert a third layer 220r between a first layer 220p of Al 0.12 Ga 0.88 AS and a second layer 220q of Al 0.88 Ga 0.12 As, and the third layer 220r is Al x3 Ga (1-x3) As (0.12 ≤ x3 ≤ 0.88). In this way, according to the embodiment, by providing a third layer 220r with an intermediate aluminum concentration between the first layer 220p and the second layer 220q, the generation of an electric field due to band bending at the interface between adjacent reflective layers can be minimized to lower the carrier barrier, and thus there is a technical effect of being able to improve the light output.

[0354] Therefore, according to an embodiment, it is possible to provide a surface-emitting laser device and a surface-emitting laser package including the surface-emitting laser device, which can improve the light output by minimizing the influence of the carrier barrier caused by the generation of an electric field in the reflection layer.

[0355] Hereinafter, the main technical features of the third embodiment will be mainly described.

[0356] Reference Figure 15 , the third embodiment may include an active region 230 on the first reflection layer 220.

[0357] The active region 230 may include an active layer 232, a first cavity 231 disposed below the active layer 232, and a second cavity 233 disposed thereon. The active region 230 of the embodiment may include the first cavity 231 and the second cavity 233, or may include only one of them.

[0358] The first cavity 231 and the second cavity 233 may be formed of Al y Ga (1-y) As (0 < y < 1), but is not limited thereto. For example, the first cavity 231 and the second cavity 233 may each include a plurality of Al y Ga (1-y) As layers.

[0359] For example, the first cavity 231 may include a first-first cavity layer 231a and a first-second cavity layer 231b. The first-first cavity layer 231a may be further separated from the active layer 232 than from the first-second cavity layer 231b. The first-first cavity layer 231a may be formed thicker than the first-second cavity layer 231b, but is not limited thereto.

[0360] One of the technical problems of the embodiment is to provide a surface-emitting laser device and a surface-emitting laser package including the surface-emitting laser device that can improve the voltage efficiency and the light output.

[0361] To solve such a technical problem, the embodiment may provide a surface-emitting laser device having a technical effect of improving the voltage efficiency by reducing the resistance in the active region and improving the light output, and a surface-emitting laser package including the surface-emitting laser device.

[0362] First, reference Figure 15In the third embodiment, the active region 230 may include a first cavity 231 disposed on the first reflective layer 220, and an active layer 232 comprising a quantum well 232a and a quantum wall 232b disposed on the first cavity 231. The first cavity 231 may be adjacent to the first reflective layer 220 and may include a first conductive first doped layer 261.

[0363] According to the third embodiment, by including a first conductive first doped layer 261 in a portion of the first cavity 231 and by reducing the resistance compared to the existing active region, voltage efficiency can be improved by reducing the resistance in the active region, and thus there is a technical effect that can improve light output.

[0364] For example, in the third embodiment, when the first cavity 231 includes a first-first cavity layer 231a and a first-second cavity layer 231b, by including a first conductive first doped layer 261 in the first-first cavity layer 231a and by reducing the resistance compared to a conventional active region, there is a technical effect of improving voltage efficiency and improving light output by reducing the resistance in the active region.

[0365] Table 3 below shows characteristic data for the surface-emitting laser devices of the comparative examples and embodiments. The comparative examples are those without doping in the cavity.

[0366] [Table 3]

[0367] type Comparison Examples Example Number of emitters 202 202 Wp(nm) 943.2 942.4 Vf(V) 2.19 2.07 PCE (%) 38.9 39.3

[0368] In the third embodiment, as doping is performed in the cavity, the operating voltage Vf is reduced by decreasing the resistance in the active region compared to the comparative example, and thus there is a technical effect that the optical efficiency or optical output can be improved.

[0369] In the third embodiment, the thickness of the first conductive first doped layer 261 is controlled to be 10% to 70% of the thickness of the first cavity 231, thereby improving voltage efficiency and light output by reducing the resistance of the active region. In this case, when the area of ​​the first conductive first doped layer 261 exceeds 70% of the area of ​​the first cavity 231, the light output may decrease due to light absorption in the doped region, and when this area is less than 10%, the contribution of the resistance reduction effect may be low. Furthermore, in this embodiment, the area of ​​the first conductive first doped layer 261 can be controlled to be 20% to 50% of the area of ​​the first cavity 231.

[0370] In an embodiment, a “region” can be compared based on the “width” occupied by each layer. Furthermore, a “region” can be the “volume” occupied by each layer.

[0371] In an embodiment, the concentration of the first conductive dopant in the first conductive first doped layer 261 is controlled to be within 1×10 17 to 8×10 17 (atoms / cm 3 ). As a result, there is a technical effect of improving voltage efficiency and light output by reducing the resistance in the active region. At this time, when the concentration of the first conductive dopant in the first conductive first doped layer 261 exceeds its upper limit, the light output may decrease due to light absorption in the doped region, and when the concentration is less than its lower limit, the contribution of the resistance reduction effect may be low.

[0372] At this time, in an embodiment, the concentration of the first conductive dopant in the first conductive first doped layer 261 located in the first cavity 231 is controlled to be lower than the concentration of the first conductive dopant in the first reflective layer 220, so that light absorption in the doped region can be prevented and voltage efficiency can be improved by reducing the resistance in the active region, thereby improving the light output.

[0373] For example, when the concentration of the first conductive dopant in the first conductive first doped layer 261 is within 1×10 18 to 2×10 18 (atoms / cm 3 ), the concentration of the first conductive dopant in the first conductive first doped layer 261 is controlled to be within 1×10 17 to 8×10 17 (atoms / cm 3 ). As a result, there is a technical effect of improving voltage efficiency and light output by reducing the resistance in the active region.

[0374] In addition, one of the technical problems of the embodiment is to provide a surface-emitting laser device capable of improving light output by improving the optical confinement efficiency around the light-emitting layer and a surface-emitting laser package including the surface-emitting laser device.

[0375] In an embodiment, to solve such a technical problem, the embodiment has a technical effect of improving light output by improving the optical confinement efficiency in the active region 230 around the light-emitting layer.

[0376] Specifically, when the first cavity 231 includes a layer based on Al x GaAs (0 < X < 1), the Al concentration in the first cavity 231 can be controlled to decrease in the direction of the active layer 232, and as Figure 15 shown, the bandgap energy level of the first cavity 231 can be controlled to decrease in the direction of the active layer​​​x When the layer of GaAs is (0 < X < 1), the Al concentration in the second cavity 233 can be controlled to decrease in the direction of the active layer 232, and as shown in Figure 15 , the bandgap energy level of the second cavity 233 can be controlled to decrease in the direction of the active layer 232, so there is a technical effect that the light output can be improved by improving the optical confinement efficiency.

[0378] (Fourth Embodiment)

[0379] Next, Figure 16 is an exemplary view of the energy band diagram 204 in the surface-emitting laser device according to the fourth embodiment.

[0380] The fourth embodiment can adopt the technical features of the above first to third embodiments, and the main features of the fourth embodiment will be mainly described below.

[0381] The second width T2 of the second cavity 233 can be greater than the first width T1 of the first cavity 231 in the fourth embodiment.

[0382] For example, the second cavity 233 can be formed of a material of Al y Ga (1-y) As (0 < y < 1), but is not limited thereto, and can include a single layer or multiple layers of Al y Ga (1-y) As.

[0383] For example, the second cavity 233 can include a second-first cavity layer 233a and a second-second cavity layer 233b. The second-second cavity layer 233b can be further separated from the active layer 232 than the second-first cavity layer 233a. The second-second cavity layer 233b can be formed to be thicker than the second-first cavity layer 233a, but is not limited thereto. At this time, the second-second cavity layer 233b can be formed to have a thickness of about 60 to 70 nm, and the second-first cavity layer 233a can be formed to have a thickness of about 40 to 55 nm, but is not limited thereto.

[0384] According to the fourth embodiment, the second width T2 of the second cavity 233 can be formed to be greater than the first width T1 of the first cavity 231, and the resonance efficiency can be improved, thereby improving the light output.

[0385] Next,​​​​​​​​​​​17B In the diagram, the horizontal axis represents the doping concentration of the first conductive dopant in the first conductive first doped layer 261 as the distance from the active layer 232 in the direction (direction X) of the first reflective layer 220 increases.

[0387] According to the embodiment, the concentration of the first conductive dopant in the first conductive first doped layer 261 can be controlled to increase from the direction of the active layer 232 in the direction of the first reflective layer 220, so that the increase in the doping concentration in the region adjacent to the active layer 232 is controlled to prevent the reduction of light intensity due to light absorption, and the increase in the doping concentration in the region adjacent to the first reflective layer 220 is used to improve the voltage efficiency due to the reduction of resistance, and thus there is a technical effect that can improve light output.

[0388] For example, refer to Figure 17A When the first conductive first doped layer 261 includes a first-first doped layer 261a and a first-second doped layer 261b, as the doping concentration in the first-second doped layer 261b, which is arranged to be more separated from the active layer 232 than the first-first doped layer 261a, increases from d1 to d2 to d3, it is possible to prevent the reduction of light intensity due to light absorption in the first-first doped layer 261a adjacent to the active layer 232, and it is possible to improve voltage efficiency based on the reduction of resistance in the region of the first-second doped layer 261b adjacent to the first reflective layer 220, and thus there is a technical effect that can improve light output.

[0389] Additionally, refer to Figure 17B When the first conductive-first doped layer 261 includes a first-first doped layer 261a, a first-second doped layer 261b, and a first-third doped layer 261c, as the doping concentrations in the first-second doped layer 261b and the first-third doped layer 261c, which are more separated from the active layer 232 than the first-first doped layer 261a, are sequentially increased to d1, d2, and d3, respectively, it is possible to prevent the reduction in light intensity due to light absorption in the region adjacent to the active layer 232, and to improve the voltage efficiency due to the reduction in resistance in the region adjacent to the first reflective layer 220, thus achieving the technical effect of improving light output.

[0390] (Fifth Embodiment)

[0391] Next, Figure 18 This is an exemplary view of the energy band diagram 205 in a surface-emitting laser device according to the fifth embodiment.

[0392] According to the fifth embodiment, the active region 230 may include a second cavity 233 disposed between the second reflective layer 250 and the active layer 232, and the second cavity 233 may be adjacent to the second reflective layer 250 and may include a second conductive-second doped layer 262.

[0393] According to the embodiment, by including a second conductive second doped layer 262 in a portion of the second cavity 233 and by reducing the resistance compared to the existing active region, voltage efficiency can be improved by reducing the resistance in the active region, and thus there is a technical effect that can improve light output.

[0394] For example, in an embodiment, when the second cavity 233 includes a second-first cavity layer 233a and a second-second cavity layer 233b, the second conductive-second doped layer 262 may be included in the second-second cavity layer 233b, which is further spaced from the active layer 232. Compared to the prior art, voltage efficiency can be improved by reducing the resistance in the active region, and thus there is a technical effect that can improve light output. For example, in an embodiment where the second cavity 233 is doped, the operating voltage Vf is reduced compared to a comparative example by decreasing the resistance in the active region, and thus there is a technical effect that improves light efficiency or light output.

[0395] In this embodiment, the region of the second conductive-second doped layer 262 is controlled to be between 10% and 70% of the region of the second cavity 233, thus achieving the technical effect of improving voltage efficiency and light output by reducing the resistance of the active region. However, when the region of the second conductive-second doped layer 262 exceeds 70% of the region of the second cavity 233, the light output may decrease due to light absorption in the doped region, and when the region is less than 10%, the contribution of the resistance reduction effect may be low.

[0396] Referring to the third to fifth embodiments, the total area of ​​the first conductive-first doped layer 261 and the second conductive-second doped layer 262 can be controlled to be 20% to 70% of the entire area of ​​the active region 230. When the upper limit is exceeded, the light output may decrease due to light absorption in the doped region, and when the total area is below the lower limit, the contribution of the resistance reduction effect may be low.

[0397] In this embodiment, the concentration of the second conductive dopant in the second conductive-second doped layer 262 is controlled at 1 x 10⁻⁶. 17 Up to 8x10 17 (atoms / cm) 3Within the range of ), and therefore there exists a technical effect of improving voltage efficiency and light output by reducing the resistance in the active region. At this time, when the concentration of the second conductive dopant in the second conductive-second doped layer 262 exceeds its upper limit, the light output may decrease due to light absorption in the doped region, and when the concentration is less than its lower limit, the contribution of the resistance reduction effect may be low.

[0398] Furthermore, in the embodiments, the concentration of the second conductive dopant in the second conductive-second doped layer 262 can be controlled to be equal to or lower than the concentration of the second conductive dopant in the second reflective layer 250, so as to prevent light absorption in the doped region and improve voltage efficiency by reducing the resistance in the active region, thereby improving light output.

[0399] For example, when the concentration of the second conductive dopant in the second conductive-second doped layer 262 is 7 x 10⁻⁶ 17 Up to 3x10 18 (atoms / cm) 3 When the concentration of the second conductive dopant in the second conductive-second doped layer 262 is within the range of 1×10⁻⁶, the concentration of the second conductive dopant is controlled at 1×10⁻⁶. 17 Up to 7×10 17 (atoms / cm) 3 Within the range of ), and therefore there is a technical effect of improving voltage efficiency and light output by reducing the resistance in the active region.

[0400] Next, Figure 19 This is a perspective view of a mobile terminal that utilizes a surface-emitting laser package according to an embodiment.

[0401] like Figure 19 As shown, the mobile terminal 1500 of the embodiment may include a camera module 1520, a flash module 1530, and an autofocus device 1510 disposed on the rear side. Here, the autofocus device 1510 may include one of the surface-emitting laser devices according to the above embodiment as a light-emitting unit.

[0402] The flash module 1530 may include a light-emitting element for emitting light therein. The flash module 1530 can be operated via camera operation on a mobile terminal or by user control.

[0403] Camera module 1520 may include image capture and autofocus functions. For example, camera module 1520 may include an autofocus function that uses an image.

[0404] The autofocus device 1510 may include an autofocus function using a laser. The autofocus device 1510 can be used under conditions where the autofocus function of the image using the camera module 1520 is degraded, for example, primarily in close-up shots at 10m or less or in dark environments. The autofocus device 1510 may include a light-emitting unit configured to include a surface-emitting laser device and a light-receiving unit such as a photodiode, configured to convert light energy into electrical energy.

[0405] Any references to "an embodiment," "embodiment," "example embodiment," etc., in this specification mean that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one embodiment of the invention. These phrases appearing throughout the specification do not necessarily refer to the same embodiment. Furthermore, when a particular feature, structure, or characteristic is described in connection with any embodiment, it is believed that such a feature, structure, or characteristic related to other embodiments in the embodiments can be implemented by those skilled in the art.

[0406] Although embodiments have been described with reference to several illustrative examples, it should be understood that those skilled in the art can devise many other modifications and embodiments that fall within the spirit and scope of these principles. More specifically, various changes and modifications can be made to the component portions and / or arrangements of the subject matter within the scope of this disclosure, the drawings, and the appended claims. In addition to changes and modifications to the component portions and / or arrangements, alternative uses will also be apparent to those skilled in the art.

Claims

1. A surface-emitting laser device, comprising: First reflective layer and second reflective layer; as well as An active region is disposed between the first reflective layer and the second reflective layer. The first reflective layer includes a first group of first reflective layers and a second group of first reflective layers, wherein the second group of first reflective layers is closer to the active region than the first group of first reflective layers. The first reflective layer includes a first conductive dopant, and the concentration of the first conductive dopant in the first group of first reflective layers is higher than the concentration of the first conductive dopant in the second group of first reflective layers. The first reflective layer includes: First-first layer, the first-first layer having a first aluminum concentration; A first-second layer, wherein the first-second layer has a second aluminum concentration higher than the first aluminum concentration and is disposed on the first-second layer; and The first-third layer is disposed between the first-first layer and the first-second layer and has a third aluminum concentration that varies from the first aluminum concentration to the second aluminum concentration within the first-third layer. In this configuration, the first layer is closer to the active region than the second layer. Wherein, the first conductive doping concentration of the first-third layer is lower than the first conductive doping concentration of the first-first layer and / or the first conductive doping concentration of the first-second layer. The active region includes a first cavity, an active layer, and a second cavity. The first cavity is disposed on the first reflective layer, and the active layer is disposed between the first cavity and the second cavity. The aluminum concentration in the first cavity decreases in the direction of the active layer. The aluminum concentration in the second cavity decreases in the direction of the active layer, and The width of the second cavity is greater than the width of the first cavity.

2. The surface-emitting laser device according to claim 1, wherein, The first conductive dopant is an n-type dopant.

3. The surface-emitting laser device according to claim 1 or 2, wherein, The first reflective layer further includes: First to fourth layers, the first to fourth layers having a fourth aluminum concentration that varies from the second aluminum concentration to the first aluminum concentration and are arranged on the first to second layers; The first-second layer is arranged between the first-first layer and the first-fourth layer. The first to fourth layers are doped with a first conductive dopant. Wherein, the first conductive doping concentration of the first to fourth layers is higher than that of the first to first layer and / or the first to second layer.

4. The surface-emitting laser device according to claim 1, in, The first cavity includes a first conductive doped layer. The first cavity includes a first-second cavity in contact with the active layer and a first-first cavity separated from the active layer. Wherein, the first-first cavity is in direct contact with the first-second cavity, and The first conductive doped layer is disposed only in the first-first cavity.

5. The surface-emitting laser device according to claim 4, in, The first cavity includes an AI-based x GaAs layers, 0 <X<1。 6. The surface-emitting laser device according to claim 1, in, The first cavity is adjacent to the first reflective layer and includes a first conductive doped layer, and Wherein, the thickness of the first conductive doped layer is less than 70% of the thickness of the first cavity.

7. The surface-emitting laser device according to claim 4 or 6, wherein, The doping concentration of the first conductive dopant in the first conductive doped layer increases from the direction of the active layer to the direction of the first reflective layer.

8. The surface-emitting laser device according to claim 7, wherein, The first conductive doping concentration of the first conductive doped layer is lower than the first conductive doping concentration of the first reflective layer.

9. A surface-emitting laser device, comprising: First reflective layer and second reflective layer; as well as An active region is disposed between the first reflective layer and the second reflective layer. The first reflective layer includes a first group of first reflective layers and a second group of first reflective layers, wherein the second group of first reflective layers is closer to the active region than the first group of first reflective layers. The first reflective layer includes a first conductive dopant, and the concentration of the first conductive dopant in the first group of first reflective layers is higher than the concentration of the first conductive dopant in the second group of first reflective layers. The second reflective layer includes a first group of second reflective layers and a second group of second reflective layers. The first group of second reflective layers includes: Second-first reflective layer, the second-first reflective layer having a first aluminum concentration; A second-second reflective layer, having a second aluminum concentration higher than the first aluminum concentration, and disposed on one side of the second-first reflective layer; and A second-third reflective layer is disposed between the second-first reflective layer and the second-second reflective layer and has a third aluminum concentration within the second-third reflective layer that varies from the first aluminum concentration to the second aluminum concentration. The thickness of the second-second reflective layer is greater than the thickness of the second-first reflective layer. The active region includes a first cavity, an active layer, and a second cavity. The first cavity is disposed on the first reflective layer, and the active layer is disposed between the first cavity and the second cavity. The aluminum concentration in the first cavity decreases in the direction of the active layer. The aluminum concentration in the second cavity decreases in the direction of the active layer, and The width of the second cavity is greater than the width of the first cavity.

10. The surface-emitting laser device according to claim 9, wherein, The thickness of the second-first reflective layer or the second-second reflective layer is greater than the thickness of the second-third reflective layer.

11. The surface-emitting laser device according to claim 9, wherein, The first group of second reflective layers further includes second-fourth reflective layers, the second-fourth reflective layers having a fourth aluminum concentration that varies from the first aluminum concentration to the second aluminum concentration within the second-fourth reflective layers.

12. The surface-emitting laser device according to claim 9, wherein, The thickness of the second-second reflective layer is 50 to 55 nm, and the thickness of the second-first reflective layer is 26 to 32 nm.

13. The surface-emitting laser device according to claim 9, 10, or 12, wherein, The thickness of the second and third reflective layers is 22 to 27 nm.

14. The surface-emitting laser device according to claim 11, wherein, The thickness of the second to fourth reflective layers is 22 to 27 nm.

15. The surface-emitting laser device according to claim 11, wherein, The second conductive doping concentration of the second-third or second-fourth reflective layer is controlled to be higher than that of the second-first or second-second reflective layer.

16. A light-emitting device, comprising: The surface-emitting laser device according to any one of claims 1-15.

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