Devices with three-dimensional optoelectronic components for laser cutting and methods for laser cutting such devices.

Abstract

This specification relates to a laser (18) processing device (20) including a laser-transparent support (22) and at least one optoelectronic circuit (30) including at least one optoelectronic component (50) having a three-dimensional semiconductor element (52) covered by an active layer, the three-dimensional semiconductor element including a substrate (53) bonded to the support, the device including a laser-absorbing region (28) located on the support and surrounding the substrate.

Description

[0001] This patent application claims priority to French patent application FR19 / 15605, which is incorporated herein by reference. Technical Field

[0002] This invention generally relates to devices having three-dimensional optoelectronic components for laser cutting and methods for laser cutting such devices. Background Technology

[0003] For certain applications, it is necessary to be able to laser-cut an object located on a first support that is substantially transparent to laser light, for example, to separate the object from the first support and transfer it to a second support. For this purpose, a laser-absorbing layer is typically situated between the object to be separated and the first support, and the laser beam is focused onto this absorbing layer. Ablation of the absorbing layer causes the object to separate from the first support. The absorbing layer may, for example, correspond to a metallic layer, particularly a gold layer.

[0004] When the object is an optoelectronic circuit, a first support is required corresponding to the substrate on which the optoelectronic circuit is formed. This avoids the need to transfer the optoelectronic circuit onto the first support. In this case, the absorption layer corresponds to the layer on which the optoelectronic circuit is formed. However, when the optoelectronic circuit includes three-dimensional optoelectronic components, particularly three-dimensional light-emitting diodes, the method of forming these three-dimensional optoelectronic components may impose additional limitations on the absorption layer. In fact, the method of forming three-dimensional optoelectronic components may include an epitaxial growth step of a three-dimensional semiconductor element that cannot be directly realized on a metal absorption layer due to the temperature required by the epitaxial step. However, it is difficult to form an absorption layer made of a non-metallic material (this material is compatible with the epitaxial growth of the three-dimensional semiconductor element on the layer and also has the required absorption characteristics). This is especially true when the thickness of the absorption layer is limited specifically for cost or technical feasibility reasons. It may then be necessary to increase the power of the laser used to achieve ablation of the absorption layer, which may cause degradation in the region near the absorption layer, especially in the region where a part of the optoelectronic circuit to be separated is formed, which is undesirable. Summary of the Invention

[0005] Therefore, the objective of the embodiments is to at least partially overcome the disadvantages of the above-described devices with three-dimensional optoelectronic components for laser cutting and the above-described methods for laser cutting such devices.

[0006] The goal of this embodiment is to focus a laser beam through a portion of the device onto the area of ​​the device to be removed.

[0007] Another objective of the embodiment is to ensure that the area near the region to be removed is not damaged during processing.

[0008] Another objective of the embodiments is to make the device manufacturing method exclude the step of transferring one element onto another element.

[0009] Another objective of the embodiments is to include an epitaxial deposition step in the device fabrication method.

[0010] One embodiment provides a device configured to be processed with a laser, including a support transparent to the laser and at least one optoelectronic circuit, the optoelectronic circuit including at least one optoelectronic component having a three-dimensional semiconductor element covered by an active layer, the three-dimensional semiconductor element including a substrate bonded to the support, the device including a region that absorbs the laser located on the support and surrounding the substrate.

[0011] According to one embodiment, the absorption region includes a photonic crystal.

[0012] According to one embodiment, the photonic crystal is a two-dimensional photonic crystal.

[0013] According to one embodiment, the photonic crystal includes a substrate made of a first material and a column grid made of a second material different from the first material, each column extending across at least a portion of the thickness of the substrate.

[0014] According to one embodiment, the absorption coefficient of the first material to the laser is less than 1.

[0015] According to one embodiment, the absorption coefficient of the first material to the laser is between 1 and 10.

[0016] According to one embodiment, the absorption coefficient of the second material to the laser is less than 1.

[0017] According to one embodiment, the absorption region includes an absorption layer surrounding the substrate, the absorption layer being made of a third material with an absorption coefficient for the laser between 1 and 10.

[0018] According to one embodiment, the device includes an electrically insulating layer between the absorber layer and the support.

[0019] According to one embodiment, the device includes an electrically insulating layer between the absorber layer and the three-dimensional semiconductor element.

[0020] According to one embodiment, the support includes a substrate that is transparent to the laser and a pad made of a fourth material that facilitates the growth of the three-dimensional semiconductor element between the substrate and the base of the three-dimensional semiconductor element.

[0021] According to one embodiment, the absorption region surrounds the pad.

[0022] According to one embodiment, the fourth material is a nitride, carbide, or boride of a transition metal from Group IV, V, or VI of the periodic table, or a combination of these compounds, or wherein the fourth material is aluminum nitride, aluminum oxide, boron, boron nitride, titanium, titanium nitride, tantalum, tantalum nitride, hafnium, hafnium nitride, niobium, niobium nitride, zirconium, zirconium borate, zirconium nitride, silicon carbide, tantalum carbonitride, magnesium nitride, or a mixture of at least two of these compounds.

[0023] According to one embodiment, the fourth material is the same as the second material.

[0024] According to one embodiment, the support includes first and second opposing surfaces, the laser is intended to pass from the first surface through the support to the second surface, and the absorption region at least partially covers the second surface.

[0025] According to one embodiment, the device includes multiple copies of the optoelectronic component, the substrate of which is bonded to the support.

[0026] One embodiment also provides a method of manufacturing a device such as those defined above, comprising epitaxially growing the three-dimensional semiconductor element on the support.

[0027] One embodiment also provides a method of laser processing of a device such as those defined above, the method comprising exposing the absorption region to the laser beam via the support.

[0028] According to one embodiment, the method includes integrating the optoelectronic circuitry into a socket, the optoelectronic circuitry still coupled to the support, and using the laser to destroy at least a portion of the absorption region. Attached Figure Description

[0029] The above-described features and advantages, as well as other features and advantages, will be described in detail below with reference to the accompanying drawings, which are given by way of example rather than limitation, in which:

[0030] Figure 1 An embodiment of a laser processing system including a device with an absorption region is shown;

[0031] Figure 2 yes Figure 1 A partially simplified enlarged view of an embodiment of the absorption region of the device;

[0032] Figure 3 yes Figure 1 A partially simplified enlarged view of another embodiment of the absorption region of the device;

[0033] Figure 4 yes Figure 3A simplified top view of a portion of the device is shown, with a cross-section.

[0034] Figure 5 yes Figure 1 A partially simplified enlarged view of another embodiment of the absorption of the device;

[0035] Figure 6 It shows Figure 3 Or the arrangement of the photonic crystal pillars in the absorption region of a 5-type device;

[0036] Figure 7 It shows Figure 3 Alternatively, another arrangement of the photonic crystal pillars in the absorption region of a device of size 5;

[0037] Figure 8 It shows Figure 5 The absorption of the device is shown by the curve of the ratio of the column spacing of the photonic crystal to the incident laser wavelength.

[0038] Figure 9 It shows Figure 5 The absorption of the absorption region of the device is based on the column fill factor and the grayscale depth map of the ratio of the column spacing of the photonic crystal to the incident laser wavelength.

[0039] Figure 10 It shows Figure 5 The absorption of the absorption region of the device is based on the column fill factor and another grayscale depth map based on the ratio of the column spacing of the photonic crystal to the incident laser wavelength.

[0040] Figure 11 It shows Figure 5 The absorption of the absorption region of the device is based on the column height of the photonic crystal layer corresponding to the first value of the column fill factor and the change curve of the ratio of the column spacing of the photonic crystal to the incident laser wavelength.

[0041] Figure 12 It shows Figure 5 The absorption of the absorption region of the device is based on the column height of the photonic crystal layer corresponding to the second value of the column fill factor and the change curve of the ratio of the column spacing of the photonic crystal to the incident laser wavelength.

[0042] Figure 13 yes Figure 1 A partially simplified cross-sectional view of an embodiment of the optoelectronic component of the device;

[0043] Figure 14 yes Figure 1 A partially simplified cross-sectional view of another embodiment of the optoelectronic component of the device;

[0044] Figure 15 It shows in Figure 1The structure obtained in one step of an embodiment of the laser cutting method for the device;

[0045] Figure 16 The structure obtained in another step of the laser cutting method is shown;

[0046] Figure 17 The structure obtained in another step of the laser cutting method is shown;

[0047] Figure 18 The structure obtained in another step of the laser cutting method is shown;

[0048] Figure 19 It shows the manufacturing process. Figure 5 The structure obtained in one step of an embodiment of the method for the device;

[0049] Figure 20 The structure obtained in another step of the manufacturing process is shown;

[0050] Figure 21 The structure obtained in another step of the manufacturing process is shown;

[0051] Figure 22 The structure obtained in another step of the manufacturing process is shown;

[0052] Figure 23 The structure obtained in another step of the manufacturing process is shown;

[0053] Figure 24 The structure obtained in another step of the manufacturing process is shown; and

[0054] Figure 25 The structure obtained in another step of the manufacturing process is shown. Detailed Implementation

[0055] Similar features are indicated by similar reference numerals in the various figures. In particular, common structural and / or functional features in the various embodiments may have the same reference numerals and may have the same structure, dimensions, and material properties. For clarity, only steps and elements useful for understanding the embodiments described herein are described in detail. Specifically, laser sources are well known to those skilled in the art and are not described in detail below.

[0056] In the following description, when terms defining absolute position, such as “front,” “back,” “top,” “bottom,” “left,” “right,” etc., or terms defining relative position, such as “upper,” “lower,” “upper part,” “lower part,” etc., are used, they indicate the orientation of the figure, unless otherwise specified. Unless otherwise specified, the expressions “approximately,” “about,” “substantially,” and “about” indicate within 10%, preferably within 5%. Furthermore, the terms “insulating” and “conductive” are considered herein to mean “electrically insulating” and “conductive,” respectively.

[0057] In the following description, the internal transmittance of a layer corresponds to the ratio of the radiation intensity exiting the layer to the radiation intensity entering the layer. The absorption of the layer is equal to the difference between 1 and the internal transmittance. In the following description, a layer is considered to be transparent to radiation when the absorption of radiation passing through it is less than 60%. In the following description, a layer is considered to be absorptive to radiation when the absorption of radiation in it is greater than 60%. In the following description, laser light is considered to correspond to monochromatic radiation. In reality, laser light can have a narrow wavelength range centered on a central wavelength, called the laser wavelength. In the following description, the refractive index of a material corresponds to the refractive index of the material at the laser wavelength used for laser processing. The absorption coefficient k is called the imaginary part of the optical index of the material. It is associated with the linear absorption α of the material according to the relation α = 4πk / λ.

[0058] Embodiments for laser cutting to form optoelectronic circuits on a substrate will be described. The term "optoelectronic circuit" is used to refer to a circuit that includes optoelectronic components capable of converting electrical signals into electromagnetic radiation or vice versa, particularly circuits specifically designed for detecting, measuring, or emitting electromagnetic radiation, or circuits specifically designed for photovoltaic applications.

[0059] The term "optoelectronic circuitry" refers more specifically to three-dimensional optoelectronic components (i.e., optoelectronic components comprising three-dimensional semiconductor elements, particularly micrometer- or nanometer-scale components) and active regions formed on the surface of each three-dimensional element. The region from which most of the electromagnetic radiation provided by the optoelectronic component is emitted, or from which most of the electromagnetic radiation received by the optoelectronic component is captured, is referred to as the active region of the optoelectronic component. Examples of three-dimensional elements include micrometer wires, nanowires, micrometer- or nanometer-scale conical elements, or micrometer- or nanometer-scale tapered elements. In the following description, embodiments of optoelectronic components comprising micrometer wires or nanowires are described. These embodiments can then be implemented for three-dimensional elements other than micrometer wires or nanowires, such as pyramidal three-dimensional elements.

[0060] The terms "micron-wire" or "nanowire" refer to a three-dimensional structure having an elongated shape along a preferred direction, having at least two dimensions referred to as sub-dimensions, ranging from 5 nm to 5 μm, preferably from 50 nm to 2.5 μm, and a third dimension referred to as the principal dimension or height, at least equal to one time the largest sub-dimension, preferably at least five times larger, and more preferably at least ten times larger. In some embodiments, the sub-dimensions may be less than or equal to about 1 μm, preferably in the range of 100 nm to 1 μm, and more preferably in the range of 100 nm to 300 nm. In some embodiments, the height of each micron-wire or nanowire may be greater than or equal to 500 nm, preferably in the range of 1 μm to 50 μm. In the following description, the term "wire" is used to denote "micron-wire or nanowire," and the preferred direction in which the wire extends is referred to hereinafter as the "axis" of the wire.

[0061] Figure 1 This is a partially simplified cross-sectional view of an embodiment of the laser cutting system 10 of device 20.

[0062] The cutting system 10 includes a laser source 12 and an optical focusing device 14 having an optical axis D. The source 12 is capable of providing an incident laser beam 16 to the focusing device 14, and the focusing device 14 outputs a converged laser beam 18. The optical focusing device 14 may include one, two, or more optical components, such as optical components corresponding to lenses. Preferably, the incident laser beam 16 is substantially collimated along the optical axis D of the optical device 14.

[0063] Device 20 includes a support 22 comprising two opposing surfaces 24, 26. A laser beam 18 penetrates into the support 22 through surface 24. According to one embodiment, surfaces 24 and 26 are parallel. According to another embodiment, surfaces 24 and 26 are planar. The thickness of the support 22 can be between 50 μm and 3 mm. An anti-reflective layer (not shown) for laser use may be provided on surface 24 of the support 22. The support 22 may have a single-layer or multi-layer structure. In particular, the support 22 may comprise a monolithic substrate and a layer or stack of layers covering one side of surface 26, the substrate corresponding to a significant portion of the thickness of the support 22, for example, more than 90 vol.% of the support 22. According to one embodiment, the substrate is made of a semiconductor. The semiconductor material may be silicon, germanium, or a mixture of at least two of these compounds. Preferably, the substrate is made of silicon, more preferably of single-crystal silicon. According to another embodiment, the substrate is at least partially made of a non-semiconductor material (e.g., an insulating material, particularly sapphire) or a conductive material.

[0064] Device 20 includes an absorption region 28 that at least partially covers surface 26 and at least one optoelectronic circuit 30 that is at least partially bonded to a support 22 through the absorption region 28 and needs to be separated from the support 22. According to one embodiment, the optoelectronic circuit 30 contacts the absorption region 28 and is bonded to the absorption region 28 on the side of the absorption region 28 opposite to the support 22. As an example, multiple optoelectronic circuits 30 are... Figure 1 The middle is shown as being bonded to the absorption region 28. Figure 1 In this embodiment, the absorption region 28 is shown to be continuous on the surface 26. As a variant, the absorption region 28 may exist only between each optoelectronic circuit 30 and the support member 22, or it may not exist between the optoelectronic circuits 30.

[0065] The cutting method may include relative displacement between the processing system 10 and the device 20, such that the laser beam 18 sweeps across the entire absorption region 28 to be removed. During the cutting operation, the optical axis D of the optical device 14 is preferably perpendicular to the surface 24.

[0066] The wavelength of the laser is specifically selected based on the material of the substrate forming the support 22, making the substrate transparent to the laser.

[0067] According to one embodiment, particularly when the substrate of the support 22 is semiconductor, the wavelength of the laser beam 18 is greater than the wavelength corresponding to the bandgap of the material forming the substrate 22, preferably at least 500 nm greater, more preferably at least 700 nm greater. This advantageously reduces the interaction between the laser beam 18 and the substrate during its passage through the substrate. According to one embodiment, the wavelength of the laser beam 18 is less than the sum of 2,500 nm and the wavelength corresponding to the bandgap of the material forming the substrate. This advantageously makes it easier to provide a laser beam for forming small-sized laser spots.

[0068] When the substrate of the support 22 is a semiconductor substrate, the laser can be an infrared laser, and the wavelength of the laser beam 18 can be in the range of 200 nm to 10 μm. Specifically, when the substrate of the support 22 is made of germanium with a band gap of 1.14 eV (corresponding to a wavelength of 1.1 μm), the wavelength of the laser beam 18 is selected to be approximately 2 μm. When the substrate of the support 22 is made of germanium with a band gap of 0.661 eV (corresponding to a wavelength of 1.87 μm), the wavelength of the laser beam 18 is selected to be approximately 2 μm or 2.35 μm.

[0069] When the substrate of the support 22 is made of sapphire, the wavelength of the laser beam 18 can be between 300 nm and 5 μm.

[0070] According to one embodiment, the processing system 10 emits a laser beam 18 in the form of one pulse, two pulses, or more than two pulses, with the duration of each pulse ranging from 0.1 ps to 1,000 ns. The peak power of the laser beam in each pulse is between 10 kW and 100 MW.

[0071] Figure 2 This is an enlarged cross-sectional view of an embodiment of device 20.

[0072] The support member 22 of device 20 is in Figure 2 From bottom to top, the middle section includes:

[0073] -Substrate 32; and

[0074] - Seed structure 34, which facilitates wire growth and covers substrate 32. The upper surface of seed structure 34 corresponds to surface 26 of support 22 previously described. Seed structure 34 may include a single seed layer facilitating wire growth, or a stack of layers facilitating wire generation, at least the uppermost layer being a seed layer. Figure 2 The seed structure 34 shown as an example corresponds to the stacking of two seed layers 36 and 38, with layer 36 situated between the substrate 32 and the seed layer 38.

[0075] The absorption region 28 is located on the seed structure 34 and preferably in contact with the seed structure 34. The absorption region 28 includes a laser-absorbing layer 40 and at least one intermediate layer 42, preferably located between the absorption layer 40 and the seed structure 34. The absorption layer 40 absorbs more than 90% of the laser light. According to one embodiment, the absorption coefficient k of the absorption layer 40 for the laser wavelength in a linear state is between 1 and 10.

[0076] The absorber layer 40 is made of, for example, a refractory metal or a metal nitride, particularly titanium (Ti), tungsten (W), molybdenum (Mo), tantalum (Ta), or nitrides of these metals, or mixtures or alloys of at least two of these metals or nitrides. The thickness of the absorber layer 40 may be between 5 nm and 500 nm. In this embodiment, the intermediate layer 42 forms part of an insulating sheath 44 that completely surrounds the absorber layer 40. According to one embodiment, the thickness of the intermediate layer 42 is greater than 5 nm, for example, between 5 nm and 500 nm. The intermediate layer 42 is made of an insulating material, such as silicon dioxide (SiO2) or silicon nitride (SiN). The possible absence of the intermediate layer 42 can prevent the absorber layer 40 from mechanically contacting the upper layer of the seed structure 34. This is to avoid the formation of alloys or mixtures between the material forming the absorber layer 40 and the upper layer of the seed structure 34, especially during the process of manufacturing the optoelectronic circuit 30.

[0077] The optoelectronic circuit 30 includes at least one three-dimensional optoelectronic component 50. Figure 2A three-dimensional optoelectronic component 50 is shown. The three-dimensional optoelectronic component 50 includes a line 52; other elements of the three-dimensional optoelectronic component 50 are not shown. Figure 2 The absorption region 28 is shown and described in further detail below. The absorption region 28 includes an opening 54 for each optoelectronic component 50. The substrate 53 of the line 52 is placed on and in contact with the seed structure 34 through the opening 54. The optoelectronic circuit 30 also includes an insulating layer 56 covering the absorption region 28 and the lower portion of the line 52. The insulating layer 56 may extend, in particular, within the opening 54 surrounding the line 52. An insulating sheath 44 exists between the absorption layer 40 and the line 52, and the insulating layer 56 may be present, particularly capable of preventing the formation of parasitic nuclei on the sides of the absorption layer 40 during the formation of the line 52.

[0078] Figure 3 This is an enlarged cross-sectional view of another embodiment of device 20. Figure 4 It has Figure 3 A top view of the section along plane IV-IV.

[0079] Figure 3 The device 20 shown includes Figure 2 All elements of the illustrated device 20 differ except that the absorption region 28 includes a photonic crystal 60. Preferably, the photonic crystal 60 corresponds to a two-dimensional photonic crystal. According to one embodiment, the propagation mode of the photonic crystal 60 corresponds to the wavelength of the laser. In this embodiment, laser absorption is performed at the level of the photonic crystal 60 via a mechanism described in more detail below.

[0080] In addition, Figure 2 In the illustrated device 20, the seed structure 34 includes a seed pad 62 for each line 52, the seed pad 62 having a base 53 on which the line 52 is placed and preferably in contact with the base 53 of the line 52. The seed structure 34 may also include a layer 36 on which the seed pad 62 is placed, the seed pad preferably in contact with the layer 36, such as... Figure 3 As shown, or comprising at least two layers of stack, on which a seed pad 62 is placed, preferably in contact with the stack. In this embodiment, the surface 26 of the support 22 corresponds to the upper surface of the seed structure 34.

[0081] The photonic crystal 60 includes a layer 64 (hereinafter referred to as the base layer) made of a first material having a first refractive index at the laser wavelength, and pillars 66 made of a second material having a second refractive index at the laser wavelength, placed on the base layer. According to one embodiment, each pillar 66 extends substantially along a central axis perpendicular to surface 26 (extending along a height L measured perpendicular to surface 26). The distance between the central axes of two adjacent pillars 66 is referred to as "a" (spacing). Preferably, the second refractive index is greater than the first refractive index. The first material may be transparent to the laser 18. The first material may be an insulating material. The second material may be transparent to the laser 18. In this embodiment, the pillars 66 are made of the same material as the seed pad 62 and are formed simultaneously with the seed pad 62. Figure 4 As shown, the seed pad 62 can then be partially merged with the adjacent pillar 66. According to one embodiment, the pillar 66 of the photonic crystal 60 can be made of one of the materials previously described for the absorption layer 40. In this case, the pillar 66 further functions as the absorption layer 40, as will be described in more detail below. In a variant, the base layer 64 of the photonic crystal 60 is made of one of the materials previously described for the absorption layer 40. In this case, the base layer 64 also functions as the absorption layer 40, which will be described in more detail below.

[0082] Figure 5 This is an enlarged cross-sectional view of another embodiment of device 20. Figure 5 The device 20 shown includes Figure 3 All components of the device 20 shown and Figure 2 All elements of the device 20 shown, namely the absorption region 28, include a laser-absorbing layer 40 and a photonic crystal 60, with the absorption layer 40 located on the side of the photonic crystal 60 opposite to the substrate 32. Figure 5 As shown, device 20 may include an intermediate layer 42 between absorption layer 40 and photonic crystal 60. Alternatively, intermediate layer 42 may be absent. Laser absorption can occur at the level of absorption layer 40 or at the level of photonic crystal 60 via mechanisms described in more detail below. Alternatively, laser absorption can be performed only at the level of absorption layer 40 instead of at the level of photonic crystal 60, and then, as described in more detail below, photonic crystal 60 can increase the duration of laser presence in absorption layer 40.

[0083] In relation to Figures 3 to 5 In the described embodiments, the height L of each column 66 can be between 100 nm and 1 μm, preferably between 250 nm and 500 nm. Figure 3 and Figure 5As shown, the height L of the column 66 can be equal to the thickness of the base layer 64. As a variant, the thickness of the base layer 64 can be greater than the height of the column 66, and the base layer 64 extends between the columns 66 and then covers the support columns 66.

[0084] Preferably, the columns 66 are arranged in a grid pattern. According to one embodiment, the spacing 'a' between each column 66 and the nearest column is substantially constant.

[0085] Figure 6 This is a partially simplified top view of an embodiment of the photonic crystal 60, in which the pillars 66 are arranged in a hexagonal grid. This means that the pillars 66 are arranged in rows in the top view, with the center of the pillar 66 at the top of an equilateral triangle, the centers of two adjacent pillars 66 in the same row are separated by a distance a, and the centers of the pillars 66 in two adjacent rows are offset by a distance a / 2 along the row direction.

[0086] Figure 7 This is a partially simplified top view of another embodiment of the photonic crystal 60, in which the pillars 66 are arranged in a square grid. This means that the pillars 66 are arranged in rows and columns, with the center of the pillars 66 located at the top of the square, and two adjacent pillars 66 in the same row are separated by a distance a, and two adjacent pillars 66 in the same column are separated by a distance a.

[0087] exist Figures 3 to 7 In the illustrated embodiment, each column 66 has a circular cross-section with a diameter D in a plane parallel to surface 26. In the case of a hexagonal grid arrangement, the diameter D can be between 0.2 μm and 3.8 μm. The spacing a can be between 0.4 μm and 4 μm. In the case of a square grid arrangement, the diameter D can be between 0.05 μm and 2 μm. The spacing a can be between 0.1 μm and 4 μm.

[0088] exist Figures 3 to 7 In the illustrated embodiment, the cross-section of each column 66 is circular in a plane parallel to surface 26. However, the cross-section of the column 66 can have different shapes, for example, it can be elliptical, polygonal, particularly square, rectangular, hexagonal, etc. According to one embodiment, all columns 66 have the same cross-section.

[0089] Already used Figure 5 The structure of device 20 shown was used to perform the first and second simulations. For the first simulation, the photonic crystal 60 will comprise silicon pillars 66 and the base layer 64 will be made of SiO2. The pillars 66 are distributed in a hexagonal grid, each pillar 66 having a circular cross-section with a diameter D equal to 0.97 μm. For the first simulation, the thickness L of the pillars 66 is equal to 1 μm. The absorption layer 40 has a thickness of 50 nm, a refractive index of 4.5, and an absorption coefficient of 3.75.

[0090] Figure 8The curves C1 and C2 show the variation of the average absorption Abs of the absorption region 28 according to the ratio a / λ of the spacing a to the laser wavelength λ. Curve C1 is shown when the device 20 has Figure 5 The curve C2 was obtained with the structure shown, and was obtained when device 20 included only the absorption layer 40 without the photonic crystal 60. Without the photonic crystal 60, the average absorption in the absorption region 28 is approximately 55%. With the photonic crystal 60 present, the average absorption exceeds 55% in several ranges of the ratio a / λ, and even reaches 90% when the ratio a / λ is approximately 0.75.

[0091] For the second simulation, the photonic crystal 60 will comprise silicon pillars 66, while the base layer 64 will be made of SiO2. The pillars 66 are distributed in a hexagonal grid, each pillar 66 having a circular cross-section. For the second simulation, the thickness L of the pillars 66 is equal to 1 μm.

[0092] Figure 9 and 10 The grayscale depth maps of the average absorption Abs in absorption region 28 are shown, based on the ratio a / λ on the horizontal axis and the fill factor FF on the vertical axis. The fill factor FF in the top view corresponds to the sum of the area of ​​pillar 66 and the total area of ​​photonic crystal 60. For example, for pillar 66 with a circular cross-section, the fill factor FF is provided by the following relationship [Mathematical Formula 1]:

[0093] [Mathematical Formula 1]

[0094]

[0095] Can distinguish Figure 9 Regions A and B in the middle and Figure 10 Region B' (with an average Abs absorption greater than approximately 70%) was selected. Regions B and B' were obtained for ratios a / λ between 0.1 and 1 and fill factors FF between 1% and 50%, while region A was obtained for ratios a / λ between 0.5 and 2 and fill factors FF between 10% and 70%.

[0096] Figure 11 The curve C3 shows the variation of average absorbed Abs with respect to the height L of column 66, where the fill factor FF is equal to 0.3 and the ratio a / λ is equal to 0.6.

[0097] Figure 12 The curve C4 shows the variation of average absorbed Abs with respect to the height L of column 66, where the fill factor FF is equal to 0.5 and the ratio a / λ is equal to 0.6.

[0098] Curves C3 and C4 exhibit local maxima corresponding to different orders of Fabry-Perot resonances, with corresponding values ​​for height L at... Figure 11and Figure 12 The height L of column 66 is preferably chosen to be substantially at the level of one of the Fabry-Perot resonances.

[0099] When the optoelectronic component corresponds to a light-emitting diode, regarding Figure 13 and 14 A more detailed embodiment of the optoelectronic component 50 is described below. However, it should be understood that these embodiments may relate to other applications, particularly optoelectronic components specifically designed for electromagnetic radiation detection or measurement, or optoelectronic components specifically designed for photovoltaic applications.

[0100] Figure 13 This is a partially simplified cross-sectional view of one embodiment of the optoelectronic component 50. The optoelectronic component 50 includes a housing 70 covering the outer wall of the upper portion of the cover line 52. The housing 70 includes at least one stack consisting of an active layer 72 on the upper portion of the cover line 52 and a semiconductor layer 74 covering the active layer 72. In this embodiment, the optoelectronic component 50 is considered to be radially configured because the housing 70 covers the sidewalls of the cover line 52. The optoelectronic circuit 30 also includes an insulating layer 76 extending above the insulating layer 56 and on the sidewalls of the lower portion of the housing 70. The optoelectronic circuit 30 also includes a conductive layer 78 covering the housing 70 and forming electrodes, and a conductive layer 76 transparent to radiation emitted by the active layer 72. The conductive layer 76 may specifically cover the housing 70 of a plurality of optoelectronic components 70 of the optoelectronic circuit 30, and then form electrodes shared by the plurality of components 50. The optoelectronic circuit 30 also includes a conductive layer 80 extending above the electrode layers 78 between the lines 52. The optoelectronic circuit 30 also includes an encapsulation layer 82 covering the optoelectronic component 30.

[0101] Figure 14 This is a partially simplified cross-sectional view of another embodiment of the optoelectronic component 50. Figure 14 The optoelectronic component 50 shown includes Figure 13 All the components of the optoelectronic assembly 50 shown differ in that the housing 70 exists only at the top of line 52. The optoelectronic assembly 50 is then considered to be in an axial configuration.

[0102] According to one embodiment, line 52 is at least partially made of at least one semiconductor material. The semiconductor material is selected from the group consisting of III-V compounds, II-VI compounds, or group IV semiconductors or compounds. Line 52 may be at least partially made of a semiconductor material primarily comprising III-V compounds, such as III-N compounds. Examples of group III elements include gallium (Ga), indium (In), or aluminum (Al). Examples of group III-N compounds are GaN, AlN, InN, InGaN, AlGaN, or AlInGaN. Other group V elements, such as phosphorus or arsenic, may also be used. Line 52 may be at least partially made of a semiconductor material primarily comprising II-VI compounds. Examples of group II elements include group IIA elements, particularly beryllium (Be) and magnesium (Mg), and group IIB elements, particularly zinc (Zn), cadmium (Cd), and mercury (Hg). Examples of group VI elements include group VIA elements, particularly oxygen (O) and tellurium (Te). Examples of group II-VI compounds are ZnO, ZnMgO, CdZnO, CdZnMgO, CdHgTe, CdTe, or HgTe. Typically, the elements in a III-V or II-VI compound can be combined in different mole fractions. Line 52 can be made at least partially of a semiconductor material that primarily comprises at least one group IV compound. Examples of group IV semiconductor materials are silicon (Si), carbon (C), germanium (Ge), silicon carbide alloy (SiC), silicon-germanium alloy (SiGe), or germanium carbide alloy (GeC). Line 52 may include dopants. As an example, for group III-V compounds, the dopant may be selected from the group consisting of: p-type group II dopants, such as magnesium (Mg), zinc (Zn), cadmium (Cd), or mercury (Hg); p-type group IV dopants, such as carbon (C); or n-type group IV dopants, such as silicon (Si), germanium (Ge), selenium (Se), sulfur (S), terbium (Tb), or tin (Sn).

[0103] Seed layer 38, seed pad 62, and possible layer 36 are made of materials favorable for the growth of line 52. As an example, the materials forming seed layer 38, seed pad 62, and possible layer 36 can be nitrides, carbides, or borides, or combinations of these compounds, of transition metals from Groups IV, V, or VI of the periodic table. As an example, seed layer 38, seed pad 62, and possible layer 36 can be made of aluminum nitride (AlN), aluminum oxide (Al2O3), boron (B), boron nitride (BN), titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), hafnium (Hf), hafnium nitride (HfN), niobium (Nb), niobium nitride (NbN), zirconium (Zr), zirconium borate (ZrB2), zirconium nitride (ZrN), silicon carbide (SiC), tantalum carbonitride (TaCN), Mg. x N yMagnesium nitride in the form of (where x is approximately equal to 3 and y is approximately equal to 2, for example, magnesium nitride in the form of Mg3N2) is made.

[0104] Each insulating layer 42, 56, 54, 76 can be made of a dielectric material, such as silicon oxide (SiO2) or silicon nitride (SiO2). x N y Where x is approximately 3 and y is approximately 4, for example, Si3N4), silicon oxynitride (especially the general formula SiO2), x N y For example, Si2ON2), hafnium oxide (HfO2) or diamond.

[0105] The active layer 72 may include confinement devices, such as a single quantum well or multiple quantum wells. It is formed, for example, by alternating GaN and InGaN layers, each having a thickness from 5 to 20 nm (e.g., 8 nm) and from 1 to 10 nm (e.g., 2.5 nm). The GaN layers may be, for example, N-type or P-type doped. According to another example, the active layer may include a single InGaN layer, for example, having a thickness greater than 10 nm.

[0106] Semiconductor layer 74 (e.g., P-type doped) may correspond to the stack of semiconductor layers and allow the formation of PN or PIN junctions, with active layer 42 situated between the intermediate P-type layer and the N-type line 52 of the PN or PIN junction.

[0107] The electrode layer 78 enables the active layer of the light-emitting diode to be polarized and allows electromagnetic radiation emitted by the light-emitting diode to pass through. The material forming the electrode layer 78 can be a transparent conductive material, such as indium tin oxide (or ITO), pure zinc oxide, aluminum zinc oxide, gallium zinc oxide, graphene, or silver nanowires. As an example, the electrode layer 78 has a thickness between 5 nm and 200 nm, preferably between 30 nm and 100 nm.

[0108] The encapsulation layer 82 may be made of organic or inorganic materials and is at least partially transparent to radiation emitted by the light-emitting diode. The encapsulation layer 82 may include a light-emitting element that emits light when excited by light emitted by the light-emitting diode, the light having a wavelength different from that emitted by the light-emitting diode.

[0109] Figures 15 to 18 This is a partially simplified cross-sectional view of the structure obtained in a series of steps of another embodiment of the method of using laser cutting device 20.

[0110] Figure 15 The structure obtained after manufacturing device 20 is shown. Figure 15 Three optoelectronic circuits 30 are shown as examples, with absorption region 28 in... Figure 15 The middle is schematically represented by continuous layers.

[0111] Figure 16 The diagram illustrates the structure obtained after placing device 20 in contact with support 90, resulting in bonding of optoelectronic circuitry 30 to support 90. According to one embodiment, bonding of optoelectronic circuitry 30 to support 90 can be achieved by bonding mixed molecules of optoelectronic circuitry 30 to support 90. According to one embodiment, support 90 may include pads 92 at the bonding locations of optoelectronic circuitry 30. Device 20 and support 90 are then brought close together until optoelectronic circuitry 30 contacts pads 92. According to one embodiment, not all optoelectronic circuitry 30 bonded to support 22 is intended to be transferred to the same support 90. For this purpose, support 90 may include pads 92 solely for transferring optoelectronic circuitry 30 to support 90. In this case, as device 20 and support 90 are brought close together, until some optoelectronic circuitry 30 contacts pads 92, optoelectronic circuitry 30 not opposite pads 92 does not contact support 90 and is therefore not bonded to support 90.

[0112] Figure 17 The structure obtained during the passage of laser 18 to separate the optoelectronic circuitry 30 from support 22 and transfer it onto support 90 is shown. In operation, laser beam 18 is preferably focused onto absorption region 28 to achieve ablation of absorption region 28. Figure 2 In the embodiment shown, laser 18 is directly absorbed by the absorption layer 40. Figure 3 and 4 In the illustrated embodiment, when the pillar 66 or the substrate 64 is made of a material that absorbs laser light 18, the photonic crystal 60 is particularly capable of increasing the absorption of laser light by the pillar 66 or the substrate 64, thereby achieving ablation of the photonic crystal 60. When the absorption coefficient k of the material forming the pillar 66 of the photonic crystal 60 and the material forming the substrate 64 of the photonic crystal 60 is not between 1 and 10 at the laser wavelength in a linear state, the photonic crystal 60 can increase the time the laser light is present in the photonic crystal 60, thus locally increasing the energy density in the photonic crystal 60. This can increase the absorption of laser light through nonlinear absorption phenomena in the photonic crystal 60, leading to ablation of the photonic crystal 60. The presence of the photonic crystal 60 can then reduce the intensity of the laser light, for which nonlinear absorption phenomena are particularly observed in the materials forming the substrate 64 and the pillar 66. Figure 5 In the illustrated embodiment, the photonic crystal 60 can locally increase the energy density of the absorption layer 40. This enables the ablation of the absorption layer 40. Based on the previously described phenomena, laser absorption can be further performed directly at the level of the photonic crystal 60.

[0113] When the support 22 is made of a semiconductor material, particularly silicon, the laser wavelength may need to be in the infrared range to make the support 22 transparent to the laser. However, commercially available infrared lasers generally have lower maximum energy compared to other commercially available lasers of other frequencies. The foregoing embodiments of device 20 advantageously enable laser cutting even when using an infrared laser, and therefore advantageously enable the use of a semiconductor support 22, particularly made of silicon.

[0114] Figure 18 The structure obtained after removing support member 22 from support member 90 is shown. The optoelectronic circuit 30, which is attached to support member 90, is separated from support member 22.

[0115] Figures 19 to 25 Is it in manufacturing such as Figure 3 A partially simplified cross-sectional view of the structure obtained in successive steps of an embodiment of the method for manufacturing device 20. The manufacturing method includes the following steps:

[0116] - Seed structure 34 is formed on substrate 32. Figure 19 Seed structure 34 is included Figure 19 The stack of two layers, 36 and 38, is shown as an example.

[0117] - For example, across the entire thickness 36 of the upper layer 38, the pillars 66 and seed pads 62 of the photonic crystal are etched in the upper layer 38 of the seed structure 34. Figure 20 Then layer 36 can act as an etch stop layer;

[0118] -The first material layer 92 deposited over the seed structure 34, particularly filling the openings between the pillars 66 and around the seed pad 62. Figure 21 );

[0119] - For example, by chemical mechanical planarization (CMP) etching layer 92 to reach the top of pillars 66 and seed pad 62, only a portion of layer 92 between pillars 66 and around seed pad 62 is retained, thereby specifically forming the base layer 64 of photonic crystal 60. Figure 22 );

[0120] - An insulating layer 56 is formed on the photonic crystal 60. Figure 23 );

[0121] - An opening 94 is etched in the insulating layer 56 to expose the top of the pillar 66 of the photonic crystal 60 at the desired location where the optoelectronic component is formed. Figure 24 );as well as

[0122] -Growth line 52 in each opening 94 ( Figure 25 ), column 66 acts as a seed pad.

[0123] The method for manufacturing device 20 continues to perform the optoelectronic component formation step.

[0124] Depending on the materials used, the deposition steps in the foregoing embodiments can be, for example, chemical vapor deposition (CVD) or metal-organic chemical vapor deposition (MOCVD), also known as metal-organic vapor phase epitaxy (MOVPE). However, methods such as molecular beam epitaxy (MBE), gas-sourced MBE (GSMBE), metal-organic MBE (MOMBE), plasma-assisted MBE (PAMBE), atomic layer epitaxy (ALE), or hydride vapor phase epitaxy (HVPE) can also be used. However, electrochemical processes such as chemical bath deposition (CBD), hydrothermal processes, liquid aerosol pyrolysis, or electrodeposition can be used.

[0125] manufacture Figure 2 Embodiments of the method of the illustrated device 20 include those previously discussed regarding Figures 19 to 25 The same steps are described, except that the step of forming the photonic crystal 60 is replaced by the step of depositing the intermediate layer 42 and the absorption layer 40.

[0126] Various embodiments and variations have been described. Those skilled in the art will understand that certain features of these various embodiments and variations can be combined, and other variations will conceive of them. Finally, based on the functional indications given above, actual implementation of the described embodiments and variations is within the capabilities of those skilled in the art.

Claims

1. A device (20) configured to be processed by a laser (18) includes a support (22) transparent to the laser and at least one optoelectronic circuit (30), the optoelectronic circuit (30) including at least one optoelectronic component (50) having a three-dimensional semiconductor element (52) covered by an active layer (72), the three-dimensional semiconductor element including a substrate (53) bonded to the support, the device including an absorption region (28) for absorbing the laser located on the support and surrounding the substrate, the absorption region (28) including a photonic crystal (60); wherein the support (22) includes a first surface (24) and a second surface (26) opposite to the first surface (24), the laser (18) being intended to pass through the support from the first surface (24) to the second surface (26), the absorption region (28) at least partially covering the second surface.

2. The device according to claim 1, wherein the photonic crystal (60) is a two-dimensional photonic crystal.

3. The device of claim 1, wherein the photonic crystal (60) comprises a base layer (64) made of a first material and a column (66) grid made of a second material different from the first material, each column extending in the base layer across at least a portion of the thickness of the base layer.

4. The device according to claim 3, wherein the absorption coefficient of the first material to the laser (18) is less than 1.

5. The device according to claim 3, wherein the absorption coefficient of the first material to the laser (18) is between 1 and 10.

6. The device according to claim 3, wherein the absorption coefficient of the second material to the laser (18) is less than 1.

7. The device according to claim 1, wherein the absorption region (28) includes an absorption layer (40) surrounding the substrate (53), the absorption layer being made of a third material having an absorption coefficient for the laser (18) between 1 and 10.

8. The device according to claim 7, comprising an electrically insulating layer (42) between the absorption layer (40) and the support member (22).

9. The device according to claim 7, comprising an electrically insulating layer (42) between the absorption layer (40) and the three-dimensional semiconductor element (52).

10. The device according to claim 1, wherein the support (22) comprises a laser-transparent substrate (32) and a pad (62) made of a fourth material, the fourth material being conducive to the growth of the three-dimensional semiconductor element (52) between the substrate (32) and the substrate (53) of the three-dimensional semiconductor element (52).

11. The device of claim 10, wherein the absorption region (28) surrounds the pad (62).

12. The device of claim 10, wherein the fourth material is a nitride, carbide, or boride of a transition metal of Group IV, V, or VI of the periodic table, or a combination of these compounds, or wherein the fourth material is aluminum nitride, aluminum oxide, boron, boron nitride, titanium, titanium nitride, tantalum, tantalum nitride, hafnium, hafnium nitride, niobium, niobium nitride, zirconium, zirconium borate, zirconium nitride, silicon carbide, tantalum carbonitride, magnesium nitride, or a mixture of at least two of these compounds.

13. The device of claim 10, wherein the photonic crystal (60) comprises a base layer (64) made of a first material and a column (66) grid made of a second material different from the first material, each column extending in the base layer across at least a portion of the thickness of the base layer, the fourth material being the same as the second material.

14. The device of claim 1, comprising a plurality of copies of the optoelectronic component (50), wherein the substrate (53) of the optoelectronic component (50) is bonded to the support (22).

15. A method of manufacturing the device (20) according to claim 1, comprising epitaxially growing the three-dimensional semiconductor element (52) on the support (22).

16. A method of processing the device (20) according to claim 1 with a laser (18), the method comprising exposing the absorption region (28) to the laser (18) through the support (22).

17. The method of claim 16, further comprising integrating the optoelectronic circuit (30) into the socket (90), the optoelectronic circuit still coupled to the support (22), and destroying at least a portion of the absorption region (28) with the laser (18).

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