Spin orbit torque spin hall device, magnetic random access memory and logic device

Abstract

The present invention relates to spin-orbit torque spin Hall devices, magnetic random access memory and logic devices. One embodiment provides a spin Hall device including a spin Hall layer and a first magnetic multilayer film structure formed on and in contact with the spin Hall layer, including a plurality of first magnetic layers and first non-magnetic interlayers located between adjacent first magnetic layers. The spin Hall layer can be used to receive an in-plane current to flip a magnetic moment of the first magnetic multilayer film structure. Other embodiments also provide spin-orbit torque magnetic random access memory and logic devices in which a spin Hall layer is used to flip a magnetic moment of a magnetic multilayer film structure included in a free magnetic layer. The present invention enables flipping of a magnetic moment of a magnetic multilayer film structure without the need for an equivalent magnetic layer, thereby improving structural simplicity and performance reliability of magnetic devices.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of spintronics, and more particularly, to a spin-orbit torque magnetic device that can achieve reliable magnetic moment switching without the need of an equivalent magnetic field, which can include magnetic random access memory, spin logic device, spin Hall device, etc. BACKGROUND

[0002] Compared with the spin transfer torque (STT) effect, the spin-orbit torque (SOT) effect does not require the application of a perpendicular current flowing through the device, but only the application of an in-plane current flowing through a spin Hall layer, to switch the magnetic moment of a free magnetic layer in contact with the spin Hall layer, thus bringing hope for the development of high-speed, long-life magnetic devices. At present, when the SOT effect is used to switch the magnetic moment of the free magnetic layer, an auxiliary magnetic field is usually needed, which can be an external magnetic field (such as an Oersted magnetic field) or an equivalent magnetic field (such as a bias magnetic field), to achieve SOT magnetic moment switching. Under the condition of zero external magnetic field, this auxiliary equivalent magnetic field can be provided by exchange bias effect or interlayer magnetic coupling effect. For example, the prior application patent CN105280214B entitled "Current-driven magnetic random access memory and spin logic device" of the present applicant discloses a magnetic random access memory and spin logic device using an equivalent magnetic field to assist in switching the free magnetic layer, the whole text of which is incorporated herein by reference. However, this structure for providing an equivalent magnetic field increases the complexity of the device and requires additional processing steps, which is not conducive to the practical application of the device. In addition, the equivalent magnetic field can be affected by certain environmental factors such as temperature or environmental magnetic field, so that the magnetic moment of the free magnetic layer cannot be switched, ultimately leading to device failure. SUMMARY

[0003] In view of the above and other technical problems, the present application is proposed. In the present application, the combined effect of interlayer Dzyaloshinsky-Moriya effect and spin-orbit torque between magnetic thin films can conveniently achieve deterministic switching of the magnetic moment without further relying on the action of other bias magnetic layers (such as in-plane exchange coupling layer or antiferromagnetic exchange bias). Using this magnetic structure as a switchable free magnetic layer in a magnetic device can improve the structural simplicity and performance reliability of the magnetic device.

[0004] An embodiment of the present application provides a spin Hall device, comprising: a spin Hall layer; and a first magnetic multilayer structure formed on and in contact with the spin Hall layer, comprising: a plurality of first magnetic layers; and a first non-magnetic intermediate layer located between adjacent first magnetic layers, wherein the spin Hall layer is configured to receive an in-plane current to switch a magnetic moment of the first magnetic multilayer structure.

[0005] In some embodiments, the first non-magnetic intermediate layer induces a DM coupling effect between adjacent first magnetic layers, such that the plurality of first magnetic layers are DM coupled to each other. The spin Hall layer, upon receiving an in-plane current, applies a spin-orbit torque to the first magnetic multilayer film structure, thereby flipping a magnetic moment of the first magnetic multilayer film structure under the joint action of the spin-orbit torque and the DM coupling effect.

[0006] In some embodiments, the direction of the in-plane current is not perpendicular to the vector direction of the DM coupling effect in the first magnetic multilayer film structure.

[0007] In some embodiments, the direction of the in-plane current is parallel to the vector direction of the DM coupling effect in the first magnetic multilayer film structure.

[0008] In some embodiments, the first non-magnetic intermediate layer is formed of a non-magnetic conductive material having a spin Hall effect.

[0009] In some embodiments, the spin Hall device further comprises a non-magnetic coupling layer formed on the first magnetic multilayer film structure; and a second magnetic multilayer film structure formed on the non-magnetic coupling layer, comprising: a plurality of second magnetic layers; and a second non-magnetic intermediate layer located between adjacent second magnetic layers, wherein the non-magnetic coupling layer induces ferromagnetic coupling or anti-ferromagnetic coupling between the first magnetic multilayer film structure and the second magnetic multilayer film structure.

[0010] In some embodiments, the spin Hall device further comprises a non-magnetic coupling layer formed on the first magnetic multilayer film structure; and a second magnetic layer formed on the non-magnetic coupling layer, wherein the non-magnetic coupling layer induces ferromagnetic coupling or anti-ferromagnetic coupling between the first magnetic multilayer film structure and the second magnetic layer.

[0011] Another embodiment of the present application provides a magnetic device, comprising: a spin Hall layer; a free magnetic layer formed on the spin Hall layer; an intermediate layer formed on the free magnetic layer; and a reference magnetic layer formed on the intermediate layer, wherein the free magnetic layer comprises a first magnetic multilayer film structure, the first magnetic multilayer film structure comprising: a plurality of first magnetic layers, one of the plurality of first magnetic layers being in contact with the spin Hall layer; and a first non-magnetic intermediate layer located between adjacent first magnetic layers, and wherein the spin Hall layer is configured to receive an in-plane current to flip a magnetic moment of the first magnetic multilayer film structure.

[0012] In some embodiments, the first non-magnetic intermediate layer induces a DM coupling effect between adjacent first magnetic layers, such that the plurality of first magnetic layers are DM coupled to each other. The spin Hall layer, upon receiving an in-plane current, applies a spin-orbit torque to the first magnetic multilayer structure, thereby flipping the magnetic moment of the first magnetic multilayer structure under the joint action of the spin-orbit torque and the DM coupling effect.

[0013] In some embodiments, the direction of the in-plane current is not perpendicular to the vector direction of the DM coupling effect in the first magnetic multilayer structure.

[0014] In some embodiments, the direction of the in-plane current is parallel to the vector direction of the DM coupling effect in the first magnetic multilayer structure.

[0015] In some embodiments, the first non-magnetic intermediate layer is formed of a non-magnetic conductive material having a spin Hall effect.

[0016] In some embodiments, the free magnetic layer further comprises: a non-magnetic coupling layer formed on the first magnetic multilayer structure; and a second magnetic multilayer structure formed on the non-magnetic coupling layer, comprising: a plurality of second magnetic layers; and a second non-magnetic intermediate layer located between adjacent second magnetic layers, wherein the non-magnetic coupling layer induces ferromagnetic coupling or anti-ferromagnetic coupling between the first magnetic multilayer structure and the second magnetic multilayer structure.

[0017] In some embodiments, the free magnetic layer further comprises: a non-magnetic coupling layer formed on the first magnetic multilayer structure; and a second magnetic layer formed on the non-magnetic coupling layer, wherein the non-magnetic coupling layer induces ferromagnetic coupling or anti-ferromagnetic coupling between the first magnetic multilayer structure and the second magnetic layer.

[0018] In some embodiments, the free magnetic layer, the intermediate layer and the reference magnetic layer form a spin valve structure or a magnetic tunnel junction structure. In the spin valve structure, the intermediate layer comprises a non-magnetic conductive material; in the magnetic tunnel junction structure, the intermediate layer comprises a non-magnetic insulating material.

[0019] In some embodiments, the magnetic device described above can be used as a magnetic random access memory or a spin logic device.

[0020] The above and other features and advantages of the present application will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which: BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 is a structural schematic diagram of a spin Hall device according to an embodiment of the present application.

[0022] Figure 2 is a structural schematic diagram of a spin Hall device according to another embodiment of the present application.

[0023] Figure 3 is a structural schematic diagram of a spin Hall device according to another embodiment of the present application.

[0024] Figure 4 is a structural schematic diagram of a spin valve or tunnel junction magnetic device according to an embodiment of the present application.

[0025] Figure 5 is a structural schematic diagram of a spin valve or tunnel junction magnetic device according to another embodiment of the present application.

[0026] Figure 6 is a structural schematic diagram of a spin valve or tunnel junction magnetic device according to another embodiment of the present application. DETAILED DESCRIPTION

[0027] Hereinafter, example embodiments according to the present application will be described in detail with reference to the accompanying drawings. Note that the accompanying drawings can not be drawn to scale. Obviously, the described embodiments are only a part of the embodiments of the present application, and the present application is not limited to the example embodiments described here.

[0028] Figure 1 is a structural schematic diagram of a spin Hall device 100 according to an embodiment of the present application. Referring to Figure 1 , the spin Hall device 100 includes a spin Hall layer 110, a magnetic multilayer film 120 formed on the spin Hall layer 110, and a cap layer 150 formed on the magnetic multilayer film 120.

[0029] The spin Hall layer 110 can be formed of a conductive material having a strong spin-orbit coupling so as to be able to exhibit a spin Hall effect, examples of such a material including but not limited to a metal or an alloy such as Pt, Au, Ta, Pd, Ir, W, Bi, Pb, Hf, IrMn, PtMn, AuMn, a topological insulator such as Bi2Se3and Bi2Te3, and a rare earth material such as Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Te, Dy, Ho, Er, Tm, Yi, Lu, and the like. Preferably, the spin Hall layer 110 can be formed of a heavy metal such as Pt, Ta, W, Ir, or an alloy thereof. The thickness of the spin Hall layer 110 can be in the range of, for example, 0.5 nm to 50 nm, preferably in the range of 0.6 nm to 20 nm, and more preferably in the range of 0.8 nm to 10 nm.

[0030] The magnetic multilayer film 120 can include a plurality of ferromagnetic conductive layers 122, Figure 1Two ferromagnetic conductive layers 122A and 122B are shown, as well as a non-magnetic intermediate layer 124 between adjacent ferromagnetic conductive layers 122. Each ferromagnetic conductive layer 122 can be formed of a ferromagnetic conductive material, and the individual ferromagnetic conductive layers 122 are ferromagnetically (parallel) coupled to each other. Examples of ferromagnetic conductive materials that can be used to form the ferromagnetic conductive layers 122 include, but are not limited to, Co, Fe, Ni, and alloys including one or more of them, such as CoFeB, CoFe, NiFe, etc. The thickness of the ferromagnetic conductive layers 122 can be in the range of 0.2 nm to 4 nm, preferably in the range of 0.2 nm to 2 nm, more preferably in the range of 0.2 nm to 1 nm.

[0031] The non-magnetic intermediate layer 124 can be formed of a non-magnetic conductive metal material with good electrical conductivity, which is disposed between adjacent ferromagnetic conductive layers 122 to induce the individual ferromagnetic conductive layers 122 to be DM coupled to each other, which will be described in detail below. For example, the non-magnetic intermediate layer 124 can be formed of a non-magnetic conductive metal with a long spin diffusion length, such as Cu, Ru, or the non-magnetic intermediate layer 124 can also be formed of a non-magnetic conductive material with a spin Hall effect, examples of such materials include, but are not limited to, metals such as Pt, Au, Ta, Pd, Ir, W, Bi, Pb, Hf, or their non-magnetic alloys, topological insulators such as Bi2Se3 and Bi2Te3, and rare earth materials such as Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Te, Dy, Ho, Er, Tm, Yi, Lu, etc. Preferably, the non-magnetic intermediate layer 124 can be formed of a heavy metal such as Pt, Ta, W, Ir, or their non-magnetic alloys. The thickness of the non-magnetic intermediate layer 124 can be in the range of 0.2 nm to 5 nm, preferably in the range of 0.2 nm to 3 nm, more preferably in the range of 0.2 nm to 2 nm. In some embodiments, the thickness of the non-magnetic intermediate layer 124 can be less than the thickness of the spin Hall layer 110.

[0032] Although Figure 1 Only two ferromagnetic conductive layers 122A and 122B are shown, but it should be understood that the magnetic multilayer film 120 can include more ferromagnetic conductive layers. However, when the number of ferromagnetic conductive layers increases, the spin-orbit torque on the ferromagnetic conductive layers farther from the spin Hall layer 110 decreases. Therefore, the number of ferromagnetic conductive layers can be, for example, between 2 and 15, preferably between 2 and 10, more preferably between 2 and 6. The ferromagnetic conductive layers 122 can have perpendicular magnetic anisotropy, such a magnetic multilayer film 120 can include a [Co / Pt]n structure, or the ferromagnetic conductive layers 122 can also have in-plane magnetic anisotropy.

[0033] The cap layer 150 can be formed of a conductive or insulating non-magnetic material for protecting Figure 1The spin Hall device 100 shown is immune to external damage or erosion. In some embodiments, the cap layer 150 can be formed of a conductive metallic material with erosion resistant properties, which can also serve as a top electrode. In some embodiments, the cap layer 150 can also be formed of a spin Hall effect material with erosion resistant properties, such as Ta, Pt, and the like.

[0034] The operation principle of the spin Hall device 100 shown is described below. Figure 1 The spin Hall device 100 shown is immune to external damage or erosion. In some embodiments, the cap layer 150 can be formed of a conductive metallic material with erosion resistant properties, which can also serve as a top electrode. In some embodiments, the cap layer 150 can also be formed of a spin Hall effect material with erosion resistant properties, such as Ta, Pt, and the like. The DM coupling effect has a vector direction, referred to as the D vector direction, which can be controlled by setting the relative tilt direction between the target material and the substrate when sputter depositing the magnetic multilayer film structure. In the present application, when writing to the spin Hall device 100, an in-plane write current can be applied to the spin Hall layer 110 through electrodes (not shown) formed at opposite ends of the spin Hall layer 110. The in-plane write current can have a current density j w which can be greater than a predetermined threshold, and its direction can be non-perpendicular to the D vector direction of the magnetic multilayer film 120, preferably the write current direction is parallel (understood to also cover anti-parallel) to the D vector direction. In this way, the magnetic moment of the magnetic multilayer film 120 can be flipped without any external magnetic field or equivalent magnetic field, under the synergistic effect of the spin transfer torque and the DM coupling effect. By controlling the direction of the write current, the magnetic moment direction of the magnetic multilayer film 120, i.e. the magnetic moment direction of each ferromagnetic conductive layer 122 included in the magnetic multilayer film 120, can be flipped back and forth in the magnetic anisotropy axis direction. In some embodiments, in order to enhance the synergistic effect between the spin orbit torque and the DM coupling, preferably, the non-magnetic intermediate layers 124 between adjacent ferromagnetic conductive layers 122 in the magnetic multilayer film 120 can be formed of a heavy metal or a non-magnetic alloy thereof with spin Hall effect, such as Pt, Ta, W, Ir, and the like, which can further improve the stability of the magnetic moment flipping.

[0035] When the cap layer 150 is also formed of a spin Hall effect material, such as Ta, Pt, or the like, an in-plane write current can also be applied to both the spin Hall layer 110 and the cap layer 150. For example, first and second electrodes (not shown) can contact opposite sides of the spin Hall device 100, respectively, to apply write currents of the same direction to both the spin Hall layer 110 and the cap layer 150. At this time, the spin Hall layer 110 and the cap layer 150 can apply spin-orbit torques of opposite directions to the magnetic multilayer film 120 from the upper and lower sides of the magnetic multilayer film 120, respectively, so that the magnetic moment direction of the magnetic multilayer film 120 is more easily flipped.

[0036] In a read operation, an in-plane read current can be applied to the spin Hall layer 110 at electrodes (first and second electrodes, not shown) at opposite ends of the spin Hall layer 110. The current density j of the in-plane current can be less than a predetermined threshold value, so that it does not cause the magnetic moment of the magnetic multilayer film 120 to be flipped. At the same time, a Hall voltage can be measured at electrodes (third and fourth electrodes, not shown) at the other opposite ends of the spin Hall layer 110. Due to the Hall effect, the Hall voltage is related to the magnetic moment direction of the magnetic multilayer film 120, so that the magnetic moment direction of the magnetic multilayer film 120, i.e., whether the data stored in the spin Hall device 100 is "0" or "1", can be determined based on the measured Hall voltage. r

[0037] It can be understood that in some embodiments, when the cap layer 150 is an electrically conductive layer formed of an electrically conductive material, the read step can also be performed on the electrically conductive layer 150. For example, an in-plane read current can be applied to the electrically conductive layer 150 at electrodes at opposite ends of the electrically conductive layer 150, and at the same time, a Hall voltage can be measured at electrodes at the other opposite ends of the electrically conductive layer 150, to determine the magnetic moment direction of the magnetic multilayer film 120, i.e., whether the data stored in the spin Hall device 100 is "0" or "1". Alternatively, similar to the write step discussed above, the read step can also be performed on both the spin Hall layer 110 and the cap layer 150, which will not be described here again.

[0038] Figure 2 is a structural schematic diagram of a spin Hall device 200 according to another embodiment of the present application. Figure 2 The structure and principle of the spin Hall device 200 of Figure 1 The spin Hall device 200 has the same parts as the spin Hall device 100, wherein the same layers are denoted by the same reference numerals, and will not be described again here. Only the differences between the spin Hall device 200 and the spin Hall device 100 will be described below.

[0039] Referring to Figure 2 ​The spin Hall device 200 includes two magnetic multilayer film structures, i.e., in addition to the first magnetic multilayer film structure 120, a second magnetic multilayer film structure 140 is provided with a non-magnetic coupling layer 130 therebetween. Similar to the first magnetic multilayer film structure 120, the second magnetic multilayer film structure 140 can include a plurality of ferromagnetic and conductive layers 142, Figure 2 Two ferromagnetic and conductive layers 142A and 142B are shown in FIG. 1 IB, with a non-magnetic intermediate layer 144 between adjacent ferromagnetic and conductive layers 142. Each ferromagnetic and conductive layer 142 can be formed of a ferromagnetic and conductive material, such as those described above with respect to the first magnetic multilayer film structure 120, and can have a thickness similar to those described above with respect to the first magnetic multilayer film structure 120, which are not repeated here. The material and thickness of the non-magnetic intermediate layer 144 can be similar to those described above with respect to the non-magnetic intermediate layer 124 in the first magnetic multilayer film structure 120. It is to be understood, however, that the number, material, and thickness of the various layers in the second magnetic multilayer film structure 140 can be the same as or different from the corresponding layers in the first magnetic multilayer film structure 120.

[0040] The non-magnetic coupling layer 130 can induce ferromagnetic (parallel) coupling or anti-ferromagnetic (anti-parallel) coupling between the first magnetic multilayer film structure 120 and the second magnetic multilayer film structure 140, such that the directions of the magnetic moments of the first magnetic multilayer film structure 120 and the second magnetic multilayer film structure 140 are the same or opposite to each other. When the directions of the magnetic moments of the first magnetic multilayer film structure 120 and the second magnetic multilayer film structure 140 are the same to each other, the net magnetic moment can be increased, thereby increasing the Hall voltage at the same read current and improving the signal-to-noise ratio of the read signal. On the other hand, when the directions of the magnetic moments of the first magnetic multilayer film structure 120 and the second magnetic multilayer film structure 140 are opposite to each other, the net magnetic moment of the device can be reduced, avoiding interference with adjacent devices. Therefore, the material and thickness of the non-magnetic coupling layer 130, etc. can be selected according to actual needs, so that the directions of the magnetic moments of the first magnetic multilayer film structure 120 and the second magnetic multilayer film structure 140 are the same or opposite to each other. The non-magnetic coupling layer 130 can include a non-magnetic and conductive metal, such as Ru, Ir, Cu, Pt, W, etc., and generally has a thickness in the range of 0.2 nm to 6 nm, preferably in the range of 0.2 nm to 4 nm, and more preferably in the range of 0.2 nm to 3 nm.

[0041] In some embodiments, to ensure the magnetic anisotropy of the first and second ferromagnetic conductive layers 122, 142 adjacent to the non-magnetically coupled layer 130, a buffer layer (not shown) may be formed between the non-magnetically coupled layer 130 and the adjacent first and second ferromagnetic conductive layers 122, 142. For example, when the first and second ferromagnetic conductive layers 122, 142 are Co layers with perpendicular magnetic anisotropy, a Pt buffer layer may be formed between the non-magnetically coupled layer 130 and the adjacent first and second ferromagnetic conductive layers 122, 142 to ensure the perpendicular magnetic anisotropy of the Co layer, wherein the thickness of the buffer layer may be in the range of 0.1 nm to 2 nm.

[0042] The write and read operations of the spin Hall effect device 200 are the same as those described above. Figure 1 The described spin Hall device 100 is similar. For example, an in-plane current can be applied to the spin Hall layer 110 to inject a spin-orbit torque into the first magnetic multilayer film 120, thereby reversing the magnetic moment direction of the first magnetic multilayer film 120 under the combined effect of the spin-orbit torque and the DM coupling effect. At the same time, due to the ferromagnetic or antiferromagnetic coupling between the first magnetic multilayer film 120 and the second magnetic multilayer film 140, the magnetic moment of the second magnetic multilayer film 140 is also reversed. For example, an in-plane current can be applied simultaneously to the spin Hall layer 110 and the cap layer 150 formed of spin Hall material. Since the spin Hall layer 110 is located below the first magnetic multilayer film 120 and the cap layer 150 is located above the second magnetic multilayer film 140, the spin orbital torques injected by the spin Hall layer 110 and the cap layer 150 into the first magnetic multilayer film 120 and the second magnetic multilayer film 140 are in opposite directions. Under the combined effect of the spin orbital torque and the DM coupling effect in the magnetic multilayer film, the magnetic moment directions of the first magnetic multilayer film 120 and the second magnetic multilayer film 140 are reversed. It should be noted that, as mentioned above, the direction of the in-plane writing current applied to the spin Hall layer 110 and / or the cap layer 150 formed of spin Hall material should not be perpendicular to the D vector direction in the first magnetic multilayer film 120 and / or the second magnetic multilayer film 140. During reading, the Hall voltage of the spin Hall device 200 can be measured to read the magnetic moment directions of the first magnetic multilayer film 120 and the second magnetic multilayer film 140. Specific operating procedures can be found above regarding... Figure 1 The steps described here are repeated.

[0043] Figure 3 This is a schematic diagram of the structure of a spin Hall device 300 according to another embodiment of the present invention. Figure 3 The structure and principle of the spin Hall device 300 Figure 1 Spin Hall device 100 and Figure 2The spin Hall device 200 has similarities to the spin Hall device 100, where like layers are indicated by like reference numerals and will not be repeated here, and the differences between the spin Hall device 300 and the spin Hall device 100 and 200 are described below.

[0044] Referring to Figure 3 In the spin Hall device 300, a second magnetic layer 160 replaces the second magnetic multilayer film structure 140 compared to the spin Hall device 200. The second magnetic layer 160 can be formed of a ferromagnetic conductive material, examples of which include but are not limited to Co, Fe, Ni and alloys including one or more of them such as CoFeB, CoFe, NiFe, etc. The thickness of the ferromagnetic conductive layer 160 can be in the range of 0.2 nm to 10 nm, preferably in the range of 0.2 nm to 6 nm, more preferably in the range of 0.2 nm to 4 nm. The second magnetic layer 160 can be ferromagnetic or anti-ferromagnetic coupled to the first magnetic multilayer film structure 120 through the non-magnetic coupling layer 130. Other aspects of the spin Hall device 300 can be similar to the spin Hall device 100 and the spin Hall device 200 described above, which will not be repeated here.

[0045] Figure 4 is a structural schematic diagram of a spin valve or tunnel junction magnetic device 400 according to an embodiment of the present application. In the spin valve or tunnel junction magnetic device 400, structures that are the same as the spin Hall devices 100, 200 and 300 are indicated by the same reference numerals and repeated description thereof will be omitted, and the different features in the spin valve or tunnel junction magnetic device 400 will be mainly described below.

[0046] Referring to Figure 4 The magnetic device 400 includes the spin Hall layer 110, the free magnetic layer 120, the intermediate layer 210, the reference magnetic layer 220 and the cap layer 150. In Figure 4 In embodiments, the magnetic multilayer film structure 120 described above is used as the free magnetic layer, the magnetic moment of which can be flipped by the spin Hall layer 110 as described above.

[0047] In some embodiments, to improve the magnetoresistance of the magnetic device 400, the magnetic layer of the magnetic multilayer film structure 120 closest to the intermediate layer 210 used as the free magnetic layer can have a different material from the other magnetic layers of the magnetic multilayer film structure 120. For example, the other magnetic layers can be formed of Co, while the magnetic layer closest to the intermediate layer 210 can be formed of CoFeB or include a Co / CoFeB bilayer structure, where the CoFeB is adjacent to or contacts the intermediate layer 210.

[0048] For a spin valve structure, the middle layer 210 can be formed of a non-magnetic conductive material with a long spin diffusion length, such as Cu; for a tunnel junction structure, the middle layer 210 can be formed of a non-magnetic insulating material, such as MgO, AI2O3, etc. Various materials and thicknesses for the middle layer 210 are known in the art and will not be described in detail here.

[0049] The reference magnetic layer 220 can be formed of a ferromagnetic conductive material with a fixed magnetic moment. For example, the magnetic moment of the reference magnetic layer 220 can be pinned by an anti-ferromagnetic (AFM) layer, such as a commonly used IrMn layer, or the reference magnetic layer 220 can have a self-pinning structure. By flipping the magnetic moment of the free magnetic layer 120, the magnetic moments of the free magnetic layer 120 and the reference magnetic layer 220 can be parallel or anti-parallel to each other, which corresponds to different stored data such as “0” and “1” or to different logic states.

[0050] As previously described, during writing, an in-plane current j w may be applied to the spin Hall layer 110, and the direction of the in-plane current j w is not perpendicular to the D vector direction of the magnetic multilayer structure 120, or preferably, the direction of the in-plane writing current j w is parallel to the D vector direction of the magnetic multilayer structure 120 (it should be understood that anti-parallel is also covered here), so that the magnetic moment direction of the magnetic multilayer structure 120 is flipped under the joint action of the spin-orbit torque and the DW coupling effect, without the need for an additional external magnetic field or equivalent magnetic field.

[0051] During reading, a perpendicular current flowing through the magnetic device 400 can be applied to measure the resistance state of the magnetic device 400 to determine whether the magnetic moments of the reference magnetic layer 220 and the free magnetic layer 110 are in an anti-parallel configuration or a parallel configuration, thereby determining whether the data stored in the magnetic device 400 is “0” or “1”.

[0052] When the magnetic device 400 is used as a spin logic device, the spin Hall layer 110 can be connected to multiple electrodes around it to provide multiple logic input currents thereto, and a perpendicular current flowing through the magnetic device 400 is applied to read its logic output.

[0053] Magnetic random access memories and spin logic devices utilizing spin valve or tunnel junction structures have been described in the applicant’s prior related patent applications CN201510574526.5, CN201610064129.8, CN201610190767.4, and US15 / 256,262, the entire contents of which are hereby incorporated by reference herein for all purposes. Therefore, detailed descriptions of related operations of the magnetic random access memories and spin logic devices are omitted here.

[0054] Figure 5This is a schematic diagram of the structure of a spin valve or tunnel junction magnetizer 500 according to another embodiment of the present invention. In the spin valve or tunnel junction magnetizer 500, the same structures as those of the previously described devices 100, 200, 300 and 400 are indicated by the same reference numerals, and repeated descriptions of them will be omitted. The different features of the spin valve or tunnel junction magnetizer 500 will be mainly described below.

[0055] Reference Figure 5 The magnetic device 500 includes a spin Hall layer 110, a free magnetic layer 230, an intermediate layer 210, a reference magnetic layer 220, and a cap layer 150. In this embodiment, the free magnetic layer 220 includes a first magnetic multilayer film 120, a second magnetic multilayer film 140, and a non-magnetically coupled layer 130 located between them. (Refer to the preceding text...) Figure 2 As described in the illustrated embodiment, the non-magnetic coupling layer 130 can induce ferromagnetic (parallel) coupling or antiferromagnetic (antiparallel) coupling between the first magnetic multilayer film 120 and the second magnetic multilayer film 140.

[0056] The write and read operations of magnetic device 500 are the same as those mentioned above. Figure 4 The operation of the magnetic device 400 shown is similar. For example, an in-plane current can be applied to the spin Hall layer 110 to inject a spin-orbit torque into the first magnetic multilayer film 120, thereby reversing the magnetic moment direction of the first magnetic multilayer film 120 under the combined effect of the spin-orbit torque and the DM coupling effect. Simultaneously, due to the ferromagnetic or antiferromagnetic coupling between the first magnetic multilayer film 120 and the second magnetic multilayer film 140, the magnetic moment of the second magnetic multilayer film 140 is also reversed. It should be noted that, as previously stated, the direction of the in-plane write current applied to the spin Hall layer 110 should not be perpendicular to the D vector direction in the first magnetic multilayer film 120. During reading, a vertical current can be applied through the magnetic device 500 to read whether the resistance state of the magnetic device 500 is high or low, thereby determining whether the stored data is "0" or "1". When the magnetic device 500 is used as a spin logic device, the spin Hall layer 110 can be connected to multiple electrodes around it to provide multiple logic input currents and apply a vertical current flowing through the magnetic device 500 to read its logic output.

[0057] Figure 6 This is a schematic diagram of the structure of a spin valve or tunnel magnetic device 600 according to another embodiment of the present invention. In the spin valve or tunnel magnetic device 600, the same structures as those of the previously described devices 100, 200, 300, 400 and 500 are indicated by the same reference numerals, and repeated descriptions of them will be omitted. The different features of the spin valve or tunnel magnetic device 600 will be mainly described below.

[0058] Reference Figure 6The magnetic device 600 includes a spin Hall layer 110, a free magnetic layer 240, an intermediate layer 210, a reference magnetic layer 220, and a cap layer 150. The magnetic device 600 of this embodiment is similar to... Figure 5 The main difference in the illustrated magnetic device 500 is that a second magnetic layer 160 replaces the second magnetic multilayer film 140 in the free magnetic layer 240, thus the free magnetic layer 240 includes a first magnetic multilayer film 120, a second magnetic layer 160, and a non-magnetically coupled layer 130 located between them. As described above, the non-magnetically coupled layer 130 can induce ferromagnetic (parallel) coupling or antiferromagnetic (antiparallel) coupling between the first magnetic multilayer film 120 and the second magnetic layer 160. Using a second magnetic layer 160 instead of the second magnetic multilayer film 140 can help improve the magnetoresistance value of the magnetic device 600. For example, the second magnetic layer 160 can be formed of materials such as CoFeB, CoFe, NiFe, etc., which help achieve higher giant magnetoresistance (GMR) or tunneling magnetoresistance (TMR). An appropriate non-magnetically coupled layer 130 can be selected based on the material of the second magnetic layer 160; for example, when the second magnetic layer 160 is formed of CoFeB, the non-magnetically coupled layer 130 can be made of W material. Furthermore, a buffer layer may be formed between the non-magnetically coupled layer 130 and the closest first magnetic layer 122B in the first magnetic multilayer film 120 to avoid the influence of the non-magnetically coupled layer 130 on the magnetic anisotropy of the first magnetic layer 122B.

[0059] The read and write operations on magnetic device 600 can be similar to or the same as those described above for magnetic device 500, and will not be repeated here.

[0060] In embodiments of the present invention, a spin-orbit torque is injected into the magnetic multilayer film in direct contact with the spin Hall layer. Utilizing the synergistic effect of the spin-orbit torque and the interlayer DM coupling effect in the magnetic multilayer film structure, the magnetic moment of the magnetic multilayer film can be easily reversed. Embodiments of the present invention achieve deterministic reversal of the magnetic moment without further reliance on other bias magnetic layers (such as in-plane exchange coupling layers or antiferromagnetic exchange bias), thus improving the structural simplicity and performance reliability of the magnetic device.

[0061] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0062] The block diagrams of the devices, apparatuses, equipment, systems referred to in this application are only illustrative examples and are not intended to require or imply that the connection, arrangement, configuration must be as shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, equipment, systems can be connected, arranged, configured in any manner. Words such as "include," "contain," "have," and the like are open-ended words that are intended to mean "including but not limited to," and are to be used interchangeably. The words "or" and "and" as used herein are intended to mean "and / or," and are to be used interchangeably. The word "such as" as used herein is intended to mean "such as but not limited to," and is to be used interchangeably.

[0063] It is also important to note that the devices, apparatuses, and methods of the present application can be embodied in a variety of other forms, including devices, apparatuses, and methods that are not specifically disclosed herein. Thus, the above description of the aspects of the application is not intended to limit the aspects of the application to the particular forms disclosed. Rather, the above description is intended to provide sufficient information to enable those skilled in the art to practice the aspects of the application. Furthermore, the description is not intended to limit the aspects of the application to the forms disclosed herein. While the above discussion primarily refers to embodiments of the application, it will be understood that the scope of the application is not limited to one or more embodiments. The scope of the application is limited only by the claims and the language of the claims. Accordingly, the claims are not to be construed in a limiting sense, and wherein the steps recited in any method claims are not to be construed as being necessaril performed in the order recited or in sequential order, unless such order or sequential order is explicitly required based on the context. It is also noted that some of the embodiments can not include all the features that are described in connection with other embodiments. Further, when a single device, apparatus, or system is described as carrying out a set of operations, it will be understood that the device, apparatus, or system includes means for carrying out the set of operations, unless the device, apparatus, or system is expressly so limited by context. Moreover, even if the apparatus, device, or system is not so limited in context, the apparatus, device, or system can not include means for carrying out a particular operation, unless the operation is expressly so described by context.

[0064] The above description of disclosed aspects is intended to be illustrative, and not restrictive. Many other aspects can be apparent to those of skill in the art upon reviewing the above description. The scope of aspects should, therefore, be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled. The claims are intended to cover any and all such aspects.

[0065] The above description has been given by way of example. Further, this description is not intended to limit embodiments of the application to forms disclosed herein. Although several example aspects and embodiments have been discussed above, those of skill in the art will recognize certain variations, modifications, changes, additions, and sub-combinations thereof.

Claims

1. A spin Hall device, comprising: a spin Hall layer; and a first magnetic multilayer structure formed on and in contact with the spin Hall layer, comprising: a plurality of first magnetic layers; and a first non-magnetic intermediate layer located between adjacent first magnetic layers, wherein the spin Hall layer is configured to receive an in-plane current to flip a magnetic moment of the first magnetic multilayer structure, wherein the first non-magnetic intermediate layer induces an interlayer DM coupling effect between adjacent first magnetic layers to cause the plurality of first magnetic layers to be DM coupled to each other, and the spin Hall layer, when receiving the in-plane current, applies a spin-orbit force moment to the first magnetic multilayer structure, thereby flipping the magnetic moment of the first magnetic multilayer structure under the combined action of the spin-orbit force moment and the interlayer DM coupling effect.

2. The spin Hall device of claim 1, wherein, The direction of the in-plane current is not perpendicular to the vector direction of the interlayer DM coupling effect in the first magnetic multilayer structure.

3. The spin Hall device of claim 1, wherein, The direction of the in-plane current is parallel to the vector direction of the interlayer DM coupling effect in the first magnetic multilayer structure.

4. The spin Hall device of claim 1, wherein, The first non-magnetic intermediate layer is formed of a non-magnetic conductive material having a spin Hall effect. 5.The spin Hall device of claim 1, further comprising: a non-magnetic coupling layer formed on the first magnetic multilayer structure; and a second magnetic multilayer structure formed on the non-magnetic coupling layer, comprising: a plurality of second magnetic layers; and a second non-magnetic intermediate layer located between adjacent second magnetic layers, wherein the non-magnetic coupling layer induces ferromagnetic coupling or anti-ferromagnetic coupling between the first magnetic multilayer structure and the second magnetic multilayer structure. 6.The spin Hall device of claim 1, further comprising: a non-magnetic coupling layer formed on the first magnetic multilayer structure; and a second magnetic layer formed on the non-magnetic coupling layer, wherein the non-magnetic coupling layer induces ferromagnetic coupling or anti-ferromagnetic coupling between the first magnetic multilayer structure and the second magnetic layer. 7.A magnetic device, comprising: a spin Hall layer; a free magnetic layer formed on the spin Hall layer; an intermediate layer formed on the free magnetic layer; and a reference magnetic layer formed on the intermediate layer, wherein the free magnetic layer comprises a first magnetic multilayer structure, the first magnetic multilayer structure comprising: a plurality of first magnetic layers, one of the plurality of first magnetic layers being in contact with the spin Hall layer; and a first non-magnetic intermediate layer located between adjacent first magnetic layers, and wherein the spin Hall layer is configured to receive an in-plane current to flip a magnetic moment of the first magnetic multilayer structure, wherein the first non-magnetic intermediate layer induces an interlayer DM coupling effect between adjacent first magnetic layers to cause the plurality of first magnetic layers to be DM coupled to each other, and the spin Hall layer, when receiving the in-plane current, applies a spin-orbit force moment to the first magnetic multilayer structure, thereby flipping the magnetic moment of the first magnetic multilayer structure under the combined action of the spin-orbit force moment and the interlayer DM coupling effect. ​ ​ ​ 8. The magnetic device of claim 7, wherein, The direction of the in-plane current is not perpendicular to the vector direction of the interlayer DM coupling effect in the first magnetic multilayer film structure.

9. The magnetic device of claim 7, wherein, The direction of the in-plane current is parallel to the vector direction of the interlayer DM coupling effect in the first magnetic multilayer film structure.

10. The magnetic device of claim 7, wherein, The first non-magnetic intermediate layer is formed of a non-magnetic conductive material having a spin Hall effect.

11. The magnetic device of claim 7, wherein, The free magnetic layer further comprises: a non-magnetic coupling layer formed on the first magnetic multilayer film structure; and a second magnetic multilayer film structure formed on the non-magnetic coupling layer, comprising: a plurality of second magnetic layers; and a second non-magnetic intermediate layer between adjacent second magnetic layers, wherein the non-magnetic coupling layer induces ferromagnetic coupling or anti-ferromagnetic coupling between the first magnetic multilayer film structure and the second magnetic multilayer film structure.

12. The magnetic device of claim 7, wherein, The free magnetic layer further comprises: a non-magnetic coupling layer formed on the first magnetic multilayer film structure; and a second magnetic layer formed on the non-magnetic coupling layer, wherein the non-magnetic coupling layer induces ferromagnetic coupling or anti-ferromagnetic coupling between the first magnetic multilayer film structure and the second magnetic layer.

13. The magnetic device of claim 7, wherein, The free magnetic layer, the intermediate layer and the reference magnetic layer form a spin valve structure or a magnetic tunnel junction structure, the intermediate layer of the spin valve structure comprising a non-magnetic conductive material, the intermediate layer of the magnetic tunnel junction structure comprising a non-magnetic insulating material.

14. The magnetic device of any one of claims 7-13, wherein, The magnetic device is used as a magnetic random access memory or a spin logic device.

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