Sputtering deposition equipment and methods

Abstract

A sputtering deposition apparatus (100) includes: a plasma generation device (106) arranged to provide a single plasma (120) for sputtering deposition of target material within a sputtering deposition region (112); a transport system (110) arranged to transport a substrate (104) through the sputtering deposition region in a transport direction (D); and one or more target support assemblies (108) arranged to support one or more targets (108) in the sputtering deposition region to provide sputtering deposition of target material on the substrate using plasma, such that during use, when the substrate is transported through the sputtering deposition region, the following are deposited: a first stripe on the substrate; and a second stripe on the substrate, wherein the first stripe includes at least one of a target material of a different density or a target material of a different composition than the second stripe.

Description

Technical Field

[0001] This invention relates to deposition, and more particularly, to a method and apparatus for sputtering and depositing target material onto a substrate. Background Technology

[0002] Deposition is the process of depositing target material onto a substrate. An example of deposition is thin-film deposition, where thin layers (typically ranging from about one nanometer or even a fraction of a nanometer to several micrometers or even tens of micrometers) are deposited on a substrate, such as a silicon wafer or web. An example technique for thin-film deposition is physical vapor deposition (PVD), where the target material in a condensed phase is evaporated to generate vapor, which is then condensed onto the substrate surface. An example of PVD is sputter deposition, in which particles are ejected from the target due to bombardment by high-energy particles, such as ions. In examples of sputter deposition, a sputtering gas, such as an inert gas like argon, is introduced into a vacuum chamber at low pressure, and the sputtering gas is ionized using high-energy electrons to generate plasma. The bombardment of the target by the plasma ions ejects the target material, which may then be deposited on the substrate surface. Sputter deposition is superior to other thin-film deposition methods, such as evaporation, because the target material can be deposited without heating it, which in turn reduces or prevents thermal damage to the substrate.

[0003] In some cases, it is desirable to deposit a pattern of material onto the surface of a substrate, rather than coating the entire surface. To create such a pattern, it is known to use a mask to protect uncoated areas of the surface. In this case, the material is deposited on the unmasked areas of the substrate itself (not protected by the mask). However, in another scenario, the material is deposited on the mask (rather than on the substrate) within the mask area.

[0004] Mask-based deposition is wasteful because it discards the material deposited on the mask. Furthermore, it may be necessary to periodically stop deposition to clean the mask, which reduces deposition efficiency. Summary of the Invention

[0005] According to a first aspect of the invention, a sputtering deposition apparatus is provided, comprising: a plasma generation device arranged to provide plasma for sputtering deposition of target material within a sputtering deposition region; a transport system arranged to transport a substrate through the sputtering deposition region in a transport direction; and one or more target support assemblies arranged to support one or more targets in a position relative to the sputtering deposition region to provide sputtering deposition of target material on the substrate, such that a first stripe is deposited on a first portion of the substrate while the substrate is being transported through the sputtering deposition region in use; and a second stripe is deposited on a second portion of the substrate. The first stripe comprises at least one of a target material of a different density or a target material of a different composition than the second stripe. Using such an apparatus, the deposition of material stripes can be performed more efficiently, for example, to produce a specific stripe pattern on the substrate, because the pattern can be produced by positioning one or more targets relative to the substrate, rather than by using other elements such as masks. For example, this deposition can be performed continuously, or with fewer interruptions in operation compared to other processes where deposition may be stopped to clean components of the apparatus, such as masks. In addition, compared with other methods, it can reduce the waste of material to be deposited, in which material is deposited onto a substrate and then removed, or material is deposited onto a mask in a region of the substrate, leaving that region of the substrate without material.

[0006] In some examples, the transport system is arranged to transport a substrate from a first side of the sputtering deposition region to a second side of the sputtering deposition region; and one or more target support assemblies include a first target support assembly arranged to support at least a first target and a second target support assembly arranged to support at least a second target. In such examples, a gap exists between the first target support assembly and the second target assembly, extending from the first side of the sputtering deposition region to the second side of the sputtering deposition region. This, for example, results in a corresponding deposition gap appearing on a portion of the substrate. This allows for the direct and efficient generation of stripe patterns on the substrate.

[0007] In these examples, the gap can be elongated along the transport direction, the first target support assembly can be elongated along the transport direction, and / or the second target support assembly can be elongated along the transport direction. This arrangement, for example, produces a more uniform pattern of deposited target material on the substrate than other arrangements.

[0008] In some examples, the transport system is arranged to transport the substrate from its first position through the deposition region to its second position; and one or more target support assemblies are arranged to support the first and second targets such that, at the first position, deposition on the second portion is due to the first target rather than the second target, and at the second position, deposition on the second portion is due to the second target rather than the first target. In this way, two stripes comprising material from two different targets can be deposited on the substrate in a clean and efficient manner.

[0009] In some examples, one or more target support components are arranged to support a first target and a second target such that the second target is offset from the first target within the sputtering deposition region and offset along an axis in a plane perpendicular to the transport direction but substantially in the transport direction. This, for example, allows for various different patterns of deposited target material to be provided on the substrate depending on the degree of offset of the second target relative to the first target.

[0010] In these examples, where the axis is a first axis, one or more target support components can be arranged to support a first target and a second target, such that the second target is offset from the first target along the transport direction within the sputtering deposition region. This, for example, provides further flexibility for depositing material stripes on a substrate according to a desired pattern.

[0011] In some examples, one or more target support components are arranged to support a first target and a second target such that at least one of the first and second targets is at an angle relative to the transport direction. This arrangement provides greater flexibility for the deposition of target material. For example, a portion of the substrate can pass through a portion of one target and then through a portion of another target, which can result in a combination of materials from the first and second targets being deposited on the substrate, for example, as streaks of mixed material.

[0012] In some examples, the sputtering deposition apparatus includes a first target magnetic element associated with a first target and a second target magnetic element associated with a second target. The first and second target magnetic elements can be considered to provide a bias for each target, allowing control of the magnetic field associated with the first and second targets, for example, confining the plasma to regions adjacent to the first and second targets, respectively.

[0013] In these examples, the sputtering deposition apparatus may also include a controller arranged to control: a first magnetic field provided by a first target magnetic element to control the sputtering deposition of material on the first target, and / or a second magnetic field provided by a second target magnetic element to control the sputtering deposition of material on the second target. By controlling the magnetic fields associated with different targets, the material deposition of different targets can be controlled sequentially; for example, one target may deposit a larger amount of material than another.

[0014] In this configuration, one or more target support assemblies can be arranged to support a first target between a first target magnetic element and the delivery system, and / or to support a second target between a second target magnetic element and the delivery system. This arrangement allows for biasing of each target without contaminating the magnetic elements due to contact with plasma or target material ejected from the target during sputtering deposition.

[0015] The material of the first target can be different from that of the second target. This provides further flexibility in creating a variety of different deposition patterns on the substrate using sputtering deposition equipment.

[0016] Plasma generation equipment may include one or more elongated antennas extending along the delivery direction. This, for example, allows for the generation of plasma of sufficient extent to fill the sputtering deposition region to provide deposition of a desired pattern of target material on the substrate.

[0017] In such an example, the delivery system can be arranged to deliver the substrate along a curved path, and one or more elongated antennas can bend in the same direction as the curve of the curved path. This, for example, improves the uniformity of the target material deposited on the substrate, because the plasma density can also be more uniform between the substrate and the target support assembly.

[0018] The sputtering deposition apparatus may include a confinement device arranged to provide a confinement magnetic field to substantially confine the plasma within the sputtering deposition region, thereby providing sputtering deposition of target material. The confinement device includes at least one confinement magnetic element that is elongated along the transport direction. This improves the efficiency of the deposition process and reduces plasma loss due to plasma leakage or other movement beyond the sputtering deposition region.

[0019] In these examples, the confinement device may include at least one additional confinement magnetic element that is elongated in a direction substantially perpendicular to the transport direction. This further improves the efficiency of the deposition process and enhances the confinement of plasma within the sputtered deposition zone.

[0020] One or more target support assemblies can be arranged to support one or more targets as the substrate is conveyed through the sputtering deposition area by a transport system, without any intermediate elements between the targets and the substrate. In this way, the sputtering deposition apparatus can be used to deposit patterns of target material on a substrate comprising substrate regions that are substantially free of target material, without the use of intermediate elements such as masks. This can thus improve deposition efficiency.

[0021] The conveying system may include rollers arranged to convey substrates in a conveying direction substantially perpendicular to the axis of rotation of the rollers. In this way, the sputtering deposition equipment can be formed as part of a roll-to-roll deposition system, which is, for example, more efficient than batch processing.

[0022] The delivery system may include a bending member, and one or more target support assemblies are arranged to support one or more targets to substantially conform to the curve of at least a portion of the bending member. This can increase the uniformity of the target material deposited on the substrate because the distance between the target and the substrate can be more uniform when delivered by the delivery system.

[0023] The surface of at least one of the targets facing the delivery system can be curved. This can similarly increase the uniformity of the target material deposited on the substrate.

[0024] According to a second aspect of the invention, a method for sputtering and depositing target material on a substrate is provided, the method comprising: providing plasma within a sputtering deposition region; and conveying the substrate through the sputtering deposition region in a conveying direction such that the positioning of one or more targets relative to the sputtering deposition region provides sputtering deposition of target material on the substrate, such that a first stripe is deposited on a first portion of the substrate as the substrate is conveyed through the sputtering deposition region; and depositing a second stripe on a second portion of the substrate, wherein the first stripe comprises at least one of a target material of a different density or a target material of a different composition compared to the second stripe. As described with reference to the first aspect, this allows for more efficient deposition of material stripes on the substrate.

[0025] The transfer substrate may include a first portion of the transfer substrate within a first region of the sputtering deposition region, the first region substantially overlapping with a first target; a second portion of the transfer substrate within a second region of the sputtering deposition region, the second region substantially overlapping with the gap between the first and second targets; and a third portion of the transfer substrate within a third region of the sputtering deposition region, the third region substantially overlapping with a second target. This allows for the generation of stripe patterns on the substrate in a direct and efficient manner.

[0026] The method may include sputtering and depositing material of a first target as a first stripe on a first portion of a substrate, and sputtering and depositing material of a second target as a third stripe on a second portion of a substrate, wherein the second stripe includes at least one of the following: the material density of the first target is lower than that in the first stripe, the material density of the second target is lower than that in the third stripe; or there is substantially no material of the first target and material of the second target.

[0027] The transfer substrate may include: a first portion of the transfer substrate within a first region of the sputtering deposition region, the first region substantially overlapping with a first portion of the target having a first length along the transfer direction; and a second portion of the transfer substrate within a second region of the sputtering deposition region, the second region substantially overlapping with a second portion of the target having a second length along the transfer direction, wherein the first length is different from the second length. Thus, target materials of different densities can be deposited in the first and second portions of the substrate, for example, according to a desired deposition pattern.

[0028] The substrate transfer may include: transferring a second portion of the substrate within a first region of the sputtering deposition region, the first region substantially overlapping with a first target; and subsequently transferring a second portion of the substrate within a second region of the sputtering deposition region, the second region substantially overlapping with a second target. Such an example may include sputtering a combination of materials from the first and second targets as a second stripe onto the second portion of the substrate. In this way, the combination of materials from the first and second targets can be deposited in a direct manner, for example, as a mixture.

[0029] The first target can extend along the transport direction. In these examples, the method may include substantially confining a portion of the plasma such that this portion of the plasma extends along the transport direction. This, for example, improves the efficiency of the deposition process by increasing the contact area between the plasma and the first target.

[0030] In the example, the method includes generating a first magnetic field associated with a first target and a second magnetic field associated with a second target during substrate transfer, wherein the first magnetic field is different from the second magnetic field. By controlling the magnetic fields associated with different targets, material deposition on different targets can be controlled sequentially, for example, one target depositing a larger amount of material than the other.

[0031] Further features will become apparent from the following description of the accompanying drawings, which are given by way of example only. Attached Figure Description

[0032] Figure 1 This is a schematic diagram showing a cross-section of the device according to the example;

[0033] Figure 2 It is shown Figure 1 A schematic diagram of a portion of the sample device;

[0034] Figure 3 It is shown Figure 1 and 2 A schematic diagram of a portion of the sample device;

[0035] Figure 4 It is shown Figure 1-3 A schematic diagram of another part of the example device;

[0036] Figure 5 This is a schematic diagram showing a portion of a device according to another example;

[0037] Figure 6 It is shown Figure 5 A schematic diagram of another part of the example device;

[0038] Figure 7 This is a schematic diagram showing a portion of a device according to yet another example;

[0039] Figure 8 It is shown Figure 7 A schematic diagram of another part of the example device;

[0040] Figure 9 This is a schematic diagram showing a portion of a device according to yet another example;

[0041] Figure 10 It is shown Figure 9A schematic diagram of another part of the example device;

[0042] Figure 11 This is a schematic diagram showing a cross-section of a device according to another example; and

[0043] Figure 12 It is shown Figure 11 A schematic diagram of a portion of the sample device. Detailed Implementation

[0044] Referring to the accompanying drawings, details of the apparatus and methods according to the examples will become apparent from the following description. Throughout this specification, numerous specific details of certain examples are set forth for illustrative purposes. References to “example” or similar language in the specification mean that a particular feature, structure, or characteristic described in connection with the example is included in at least one example, but not necessarily in others. It should also be noted that some examples are described schematically, in which certain features are omitted and / or must be simplified to facilitate explanation and understanding of the concepts behind these examples.

[0045] refer to Figures 1 to 4 An example apparatus 100 for sputtering and depositing target material 102 onto a substrate 104 is schematically shown. Such apparatus 100 may be referred to as a sputtering deposition apparatus.

[0046] Apparatus 100 can be used for plasma-based sputtering deposition in a wide range of industrial applications, such as applications for thin film deposition, for example, for the production of optical coatings, magnetic recording media, electronic semiconductor devices, LEDs, energy generating devices such as thin-film solar cells, and energy storage devices such as thin-film batteries. Therefore, while the context of this disclosure may in some cases relate to the production of energy storage devices or portions thereof, it will be understood that apparatus 100 and methods described herein are not limited to their production.

[0047] Although not shown in the figures for clarity, it should be understood that the device 100 may be housed within a housing that can be evacuated to a low pressure suitable for sputter deposition during use, such as 3 × 10⁻⁶. -3 For example, the housing can be evacuated to a suitable pressure (e.g., less than 1 × 10⁻⁶) by a pump system (not shown). -5 (Torch), and in use, a gas supply system (not shown) can be used to introduce process gas or sputtering gas (e.g., argon or nitrogen) into the housing to achieve a pressure suitable for sputtering deposition (e.g., 3 × 10⁻⁶). -3 The degree of (to entrust).

[0048] Back Figures 1 to 4 The example shown, in general, includes a plasma generation device 106, one or more target support assemblies 108 (which may be referred to as a target support system), and a delivery system 110.

[0049] The transport system 110 is arranged to transport the substrate 104 through the sputtering deposition region 112. The sputtering deposition region 112 is defined between the target support assembly 108 and the transport system 110. The sputtering deposition region 112 can be considered as the area between the transport system 110 and the target support assembly 108, in which sputtering deposition from the target material 102 onto the substrate 104 occurs during use. Figure 1 The sputtering deposition zone 112 is defined by the dashed lines on the left and right sides, the target support assembly 108 at the bottom, and the delivery system 110 at the top. However, this is merely an example.

[0050] In this case, substrate 104 is a substrate web, although in other cases the substrate can be of different forms. For example, a substrate web refers to a flexible, bendable, or easily pliable substrate. Such a substrate can be flexible enough to allow it to bend around a roller, for example, as part of a roll-to-roll feeding system. Figures 1 to 4 In the example, substrate 104 is conveyed by conveyor system 110 along a curved path, which is formed by... Figure 1 Arrow C indicates this. However, in other cases, the substrate can be relatively rigid or inflexible. In this case, the substrate can be transported by a conveyor system without bending it or bending it by a considerable amount.

[0051] In some examples, the conveyor system 110 may include a curved member. Figure 1 In this configuration, the bending member is provided by roller 114, which is, for example, a substantially cylindrical roller, such as a tumbler, although in other examples the bending member may be provided by different components. Roller 114 can be considered as a substrate guide. The bending member can be arranged to rotate about an axis 116, for example, provided by a shaft. Axis 116 may also correspond to the longitudinal axis of the bending member. The conveying system 110 can be arranged to feed substrate 104 onto and from roller 114 such that substrate 104 is carried by at least a portion of the curved surface of roller 114. Figure 1 In one example, the conveying system 110 includes a first roller 118a and a second roller 118b. The first roller 118a is arranged to feed the substrate 104 onto a drum 114, and the second roller 118b is arranged to feed the substrate 104 from the drum 114 after the substrate 104 has passed through the sputtering deposition region 112. The conveying system 110 may be part of a roll-to-roll processing apparatus in which the substrate 104 is supplied from a first roll or spool of substrate material (e.g., substrate web) through the apparatus 100 and then fed onto a second roll or spool to form a loaded roll of processed substrate web.

[0052] Transmission system 110 in Figure 1The substrate 104 is conveyed in the conveying direction indicated by the middle arrow D. The conveying direction D can be considered to correspond to the approximate direction of movement of the substrate 104 through the device 100. For example, the conveying direction D can be considered to be the direction between a portion of the substrate 104 entering the device 100 and a portion of the substrate 104 leaving the device 100. In the case where the conveying system 110 includes rollers (e.g., drum 114), the conveying direction D can correspond to the rotation direction of the roller, which can be tangent to the highest point of the roller. In this case, the conveying system 110 can be arranged to convey the substrate 104 in the conveying direction D, which is substantially perpendicular to the axis of rotation 116 of the roller (in this case, drum 114). A direction can be considered substantially perpendicular to the axis when it is perpendicular to the axis, within measurement tolerances, or within a few degrees of error (e.g., within 5 or 10 degrees). Figure 1 The transmission direction D in the example is horizontal, although this is just an example.

[0053] In some examples, substrate 104 may be or include silicon or a polymer. In some examples, such as for the production of energy storage devices, substrate 104 may be or include nickel foil, but it will be understood that any suitable metal may be used instead of nickel, such as aluminum, copper or steel, or a metallized material including metallized plastics, such as aluminum on polyethylene terephthalate (PET).

[0054] One or more target support assemblies 108 are arranged to support target material 102, for example, by supporting one or more targets comprising target material 102. Each of the one or more target support assemblies 108 can support one or more targets. Figure 1 In the middle, only one target support component 108 is visible; however, Figure 2 and 3 The target support assembly 108 is shown in more detail. In some examples, the target support assembly 108 may include at least one plate or other support structure that supports or holds the target material 102 in place during sputtering deposition.

[0055] The target material 102 can be a material sputter-deposited onto the substrate 104. For example, the target material 102 can be or includes a material deposited onto the substrate 104 by sputter deposition. In some examples, such as for the production of energy storage devices, the target material 102 can be or includes a cathode layer of the energy storage device, or can be or includes a precursor material for a cathode layer of the energy storage device, such as a material suitable for storing lithium ions, such as lithium cobalt oxide, lithium iron phosphate, or alkali metal polysulfide salts. Additionally or alternatively, the target material 102 can be or includes an anode layer of the energy storage device, or can be or includes a precursor material for an anode layer of the energy storage device, such as lithium metal, graphite, silicon, or indium tin oxide. Additionally or alternatively, the target material 102 can be or includes an electrolyte layer of the energy storage device, or can be or includes a precursor material for an electrolyte layer of the energy storage device, such as an ionically conductive but also electrically insulating material, such as lithium phosphorus nitride (LiPON). For example, the target material 102 may be or include LiPO as a precursor material for depositing LiPON onto the substrate 104, for example by reacting with nitrogen in the sputtering deposition region 112.

[0056] In this example, the target support assembly 108 is arranged to support one or more targets relative to the sputtering deposition region 112 to provide sputtering deposition of target material 102 on a substrate 104, such that as the substrate 104 is conveyed through the sputtering deposition region 112 in use, a first stripe is deposited on a first portion of the substrate 104, and a second stripe is deposited on a second portion of the substrate 104, wherein the first stripe comprises at least one of target material 102 of a different density or a different composition compared to the second stripe. Therefore, in such an example, what causes the deposition of the first and second stripes is the positioning of the target material 102 relative to the substrate 104 (when the substrate 104 is conveyed by the transport system 110), rather than other features of the sputtering deposition apparatus 100, such as a mask. In this way, the deposition of material stripes, such as producing a specific stripe pattern on the substrate 104, can be performed more efficiently. For example, this deposition can be performed continuously, or with fewer interruptions in operation compared to other processes where deposition may be stopped to clean apparatus components, such as masks. Furthermore, compared to other methods, this approach reduces material waste, where material is deposited onto a substrate and subsequently removed, or deposited onto a region of a mask on the substrate, leaving that region of the substrate without material. (Reference) Figures 2 to 10 The exemplary arrangement of the target support assembly 108 and the deposition pattern produced by such arrangement will be discussed in more detail.

[0057] In some examples, such as those illustrated, the device may include a plasma generation device 106. The plasma generation device 106 is arranged to provide plasma 120 for sputtering deposition of target material 102 supported by target support assembly 108 within sputtering deposition region 112.

[0058] In some examples, the plasma generating device 106 can be arranged remotely from the transport system 110. For example, the plasma generating device 106 can be located at a distance radially away from the transport system 110. In this way, the plasma 120 can be generated remotely from the transport system 110 and the sputtering deposition region 112.

[0059] In some examples, the plasma generation apparatus 106 may include one or more antennas 122, with appropriate radio frequency (RF) power driven through the antennas 122 by an RF power supply system to generate inductively coupled plasma 120 from process or sputtered gases. In some examples, plasma 120 may be generated by driving RF current through one or more antennas 122, for example, at frequencies between 1 MHz and 1 GHz; frequencies between 1 MHz and 100 MHz; frequencies between 10 MHz and 40 MHz; or frequencies of approximately 13.56 MHz or multiples thereof. The RF power causes ionization of the process or sputtered gases to generate plasma 120.

[0060] One or more antennas of the plasma generating device 106 may be elongated antennas 122, which may be arranged along the conveying system 110 such that the conveying direction D of the conveying substrate 104 is elongated. In this case, the elongated antenna may extend in a direction perpendicular to the rotation axis 116 of the roller 114. The rotation axis 116 of the roller 114, for example, passes through the origin of the radius of curvature of the curved roller 114, and... Figure 1 The axis corresponds to the mounting roller 114. In this case, the antenna does not need to follow the transmission direction D or the direction perpendicular to the axis of rotation of the roller 114 precisely or accurately so that the antenna is elongated in these directions. For example, the antenna 122 can be considered to be elongated along a given direction, wherein the length of the antenna 122 parallel to the given direction is greater than the width of the antenna 122 perpendicular to the given direction.

[0061] While in some cases the antenna shape can be linear, in others it can be curved. For example, in the case where the transport system 110 is arranged to transport the substrate 104 along a curved path, one or more elongated antennas 122 can be bent in the same direction as the curve of the curved path, for example as... Figure 1 As shown. This antenna 122 can, for example, have a crescent-shaped cross-section. Such as Figure 1The bent antenna of antenna 122 may be parallel to the bending path C, but radially and axially deviated from the bending path C, for example, parallel to the bending surface of a bending member (e.g., roller 114) of a substrate guiding the bending path C, but radially and axially deviated from that bending surface. The bent antenna may be driven by radio frequency power to generate plasma 120 having a basic bent shape.

[0062] In some examples, the plasma generating device 106 includes two antennas 122a and 122b for generating inductively coupled plasma 120, such as... Figure 2 This is shown more clearly in the middle. Figure 2 It shows Figure 1 The plan view, for clarity, omits elements of substrate 104 and delivery system 110. Antennas 122a and 122b may extend substantially parallel to each other and may be arranged laterally to each other, for example, laterally to each other on opposite sides of the sputtering deposition region. In the examples herein, two elements can be considered substantially parallel to each other when they are parallel to each other, parallel to each other within manufacturing or measurement tolerances, or parallel to each other within a few degrees (e.g., within 5 or 10 degrees). This arrangement allows for the precise generation of an elongated region of plasma 120 between the two antennas 122a and 122b, which in turn helps to precisely confine the generated plasma 120 within the sputtering deposition region 112. In some examples, antennas 122a and 122b may be similar in length to the target support assembly 108. Antennas 122a and 122b may be spaced apart by a distance similar to the width of a substrate guide used to guide substrate 104 through deposition region 112. Figure 1 In this process, a substrate guide is provided by roller 114. Thus, the spacing between antennas 122a and 122b can be similar to the width of the web of substrate 104 conveyed by transport system 110. Antennas 122a and 122b can provide plasma 120 to be generated in a region whose length corresponds to the length of the substrate guide (and therefore the width of the web of substrate 104), thus allowing plasma 120 to be uniform or consistent across the width of sputtering deposition region 112. This, in turn, contributes to providing uniform or consistent sputtering deposition.

[0063] In example Figure 1In the example, the sputtering deposition apparatus 100 may further include a confinement device 124. The confinement device 124 may include one or more magnetic elements arranged to provide a confinement magnetic field to substantially confine plasma 120 (e.g., plasma generated by plasma generation device 106) within the sputtering deposition region 112 to provide a web of target material 108 to substrate 104 in use. The plasma 120 can be considered substantially confined within the sputtering deposition region 112, for example, leakage or other movement of plasma 120 to areas outside the sputtering deposition region 112 is relatively small, e.g., negligible or small enough to continue the sputtering deposition process without significantly affecting the sputtering deposition rate. In some cases, the confinement device 124 includes at least one confinement magnetic element that is elongated along the transport direction D. For example, the limiting magnetic element can be elongated in a direction parallel to the transport direction D, within measurement tolerances, within a few degrees, such as within an error of 5 or 10 degrees, or the length of the limiting magnetic element parallel to the transport direction D can be greater than the width of the limiting magnetic element perpendicular to the transport direction D.

[0064] exist Figure 1 and 2 In the middle, the limiting device 124 includes two limiting magnetic elements 124a and 124b, which are parallel to the antenna 122, but at a certain distance from the antenna 122 in a direction parallel to the rotation axis of the roller 114. Therefore, in Figure 1 In the middle, the limiting magnetic elements 124a and 124b are located behind the first antenna 122a and between the first antenna 122a and the second antenna 122b. Figure 2 The positions of the limiting magnetic elements 124a and 124b are shown more clearly in the image.

[0065] The confinement magnetic field generated by the confinement device 124 can be characterized by magnetic field lines arranged to substantially follow a curved path C, at least within the sputtering deposition region 112, in order to confine the plasma 120 within a curved region following the curved path C. In some examples, the magnetic field lines characterizing the confinement magnetic field can be arranged such that imaginary lines (extending perpendicular to each magnetic field line and connecting the magnetic field lines) are curved, so as to substantially follow a curved path C, at least within the deposition region.

[0066] exist Figure 1 In the example, the limiting device 124 is arranged to provide a limiting magnetic field including limiting magnetic field lines that are substantially straight in themselves and extend in a direction parallel to the axis of rotation of the drum 114, but are arranged such that the imaginary line extending perpendicular to each magnetic field line and connecting the magnetic field lines is curved, so as to substantially follow the curve of the curved path C at least in the sputtering deposition zone 112.

[0067] In some examples, one or more of the limiting magnetic elements 124a, 124b may be electromagnets. The sputtering deposition apparatus 100 may include a controller (not shown) arranged to control the magnetic field strength provided by the one or more electromagnets. This allows control over the arrangement of the magnetic field lines characterizing the limiting magnetic field. This allows for adjustment of the plasma density at the substrate 104 and / or target material 102, thereby improving control over sputtering deposition. This allows for increased operational flexibility of the sputtering deposition apparatus 100.

[0068] At least one of the magnetic elements 124a and 124b may include a solenoid. The solenoid may have an opening through which plasma 120 is guided in use. The opening may be curved and substantially perpendicular to the longitudinal axis (axis of rotation) of the curved member. Figure 1 The axis of rotation of the roller 114 is elongated in the direction of rotation. For example... Figure 1 As shown, a bent solenoid like this can essentially follow the curve of the bending path C. For example, the bent solenoid can be parallel to the bending member (in... Figure 1 The middle part is the curved surface of roller 114, but it is offset radially and axially from the curved surface of the curved member. This is in Figure 2 As shown in the figure, Figure 2 A first limiting magnetic element 124a (which may be a bent solenoid) is shown, disposed between the first antenna 122a and the bent member. Figure 1 In this sense, the second confining magnetic element 124b is arranged on the side of the curved member opposite to the first confining magnetic element 124a. The second confining magnetic element 124b (which may also be a curved solenoid) is disposed between the second antenna 122b and the curved member. Such a curved solenoid can provide a confining magnetic field, wherein the field lines are arranged such that the imaginary lines extending perpendicular to each magnetic field line and connecting the magnetic field lines are curved, thus substantially following the curve of the curved path C, at least in the sputtering deposition region 112.

[0069] Plasma 120 can be generated along the length of antennas 122a and 122b, and confinement device 124 can confine plasma 120 within the region defined by antennas 122a and 122b and confinement magnetic elements 124a and 124b. Plasma 120 can be confined by confinement magnetic elements 124a and 124b in the form of bent plates. In this case, the length of the bent plate extends in a direction parallel to the longitudinal (rotational) axis of the bent member. Plasma 120 in the form of bent plates can be confined by the magnetic field provided by the confinement magnetic elements 124a and 124b around the bent member, thereby replicating the curve of the bent member (e.g., Figure 1(The curve of roller 114 in the image). The thickness of the plasma in the curved sheet can be substantially constant along the length and width of the curved sheet. The plasma in the form of a curved sheet can have a substantially uniform density, for example, the density of the plasma in the form of a curved sheet can be substantially uniform across one or both of its length and width. Plasma confined in the form of a curved sheet can allow for an increase in the area where sputtering deposition can be achieved, and thus allow for more efficient sputtering deposition, and / or allow for a more uniform distribution of plasma density across the web of substrate 104, for example, in the direction of the curve around the curved member, and across the width of substrate 104. This, in turn, can allow for more uniform sputtering deposition across the web of substrate 104, for example, in the direction of the surface around the curved member and along the length of the curved member, which can improve the consistency of the processing of substrate 104.

[0070] Confining the plasma 120 to the form of a curved sheet, such as a curved sheet having a substantially uniform density at least in the sputtering deposition region 112, can alternatively or additionally allow for a more uniform distribution of plasma density across the web of the substrate 104, for example, in the direction of the curve surrounding the curved member 114 and along the length of the curved member 114. This, in turn, allows for more uniform sputtering deposition on the web of the substrate 104, for example, in the direction surrounding the surface of the curved member and along the width of the substrate 104. Therefore, sputtering deposition can be performed more consistently. This can, for example, improve the consistency of the substrates being processed and, for example, reduce the need for quality control. This is in contrast to, for example, magnetron-type sputtering deposition apparatuses, in which the magnetic field lines characterizing the resulting magnetic field tightly loop in and out of the substrate, thus not allowing for a uniform distribution of plasma density on the substrate.

[0071] In some examples, at least in the sputtering deposition region 112, the plasma 120 can be a high-density plasma. For example, the plasma 120 (in the form of a curved sheet or other form) can have, for example, a density of 10 in the deposition region 112. 11 cm -3 Or even higher densities. High-density plasma 120 in deposition zone 112 can allow for efficient and / or high-rate sputtering deposition.

[0072] exist Figure 1 In the example shown, the target support assembly 108 is substantially curved. Figure 1 In one example, the target material 102 supported by the target support assembly 108 is substantially curved. In this case, any portion of the curved target support assembly 108 forms an obtuse angle with any other portion of the curved target support assembly 108 along the curve direction. In some examples, different portions of the target support assembly 108 may support different target materials, for example, to provide a desired deposition arrangement or composition to the web of the substrate 104.

[0073] In some examples, the curved target support assembly 108 may substantially follow the curve of the curved path C. For example, the curved target support assembly 108 may substantially conform to or replicate the curved shape of the curved path C. For example, the curved target support assembly 108 may have a curve substantially parallel to the curved path but radially offset from it. For example, the curved target support assembly 108 may have a curve with a common curve center to the curved path C, but with a different radius of curvature than the curved path C; in the example shown, the radius of curvature is larger. Therefore, in use, the curved target support assembly 108 may substantially follow a curve substantially confined to the curved member ( Figure 1 The curve of the curved plasma 120 around the roller 114. In other words, in some examples, the plasma 120 may be substantially confined by the limiting magnetic elements 124a, 124b of the confining device to be located between the path C of the substrate 104 and the target support assembly 108, and substantially follow the curve of the curved path C and the curved target support assembly 108. However, in other cases, one or more target support assemblies and / or the target supported by the target support assembly may be planar, for example, non-curved.

[0074] It should be understood that the exemplary target support assembly 108 (and the target material 102 supported therefrom) can be substantially in bending members (e.g. Figure 1 The roller 114 extends along its entire length, for example, in a direction parallel to the longitudinal axis of the roller 114. This maximizes the surface area of ​​the web of the substrate 104 carried by the roller 114, on which the target material 102 can be deposited. Figure 1 In this embodiment, the target support assembly 108 (and the target material 102 supported therefrom) extends parallel to the lower portion of the roller 114, corresponding to approximately one-quarter of the diameter of the roller 114. However, in other examples, the target support assembly 108 and / or the target material 102 may extend parallel to the roller 114 over a greater extent. For example, the target support assembly 108 and / or the target material 102 may extend further upward and around the roller 114. Figure 1 Roller 114, for example in Figure 1 The concept is such that the end of at least one target support assembly 108 is flush with or above the shaft on which the roller 114 is mounted.

[0075] The plasma 120 can be substantially confined by the confinement device 124 to substantially follow the curve of the curved path C and the curved target support assembly 108. The region or volume between the curved path C and the curved target support assembly 108 can be curved accordingly around the curved member. Thus, the sputtering deposition region 112 can represent the curved volume in use, in which the target material 102 is sputtered and deposited onto the substrate 104 carried by the transport system 110. This can allow for an increase in the surface area of ​​the web of the substrate 104 carried by the transport system 110 present in the sputtering deposition region 112 at any given time. This, in turn, can allow for an increase in the surface area of ​​the web of the substrate 104 (on which the target material 102 can be deposited in use). This, in turn, allows for an increase in the area of ​​sputtering deposition without significantly increasing the spatial coverage area of ​​the target support assembly 108 or changing the dimensions of the components of the transport system 110 (e.g., the roller 114). For example, for a given degree of deposition, this can allow the web of substrate 104 to be fed through the roll-to-roll apparatus at a (still) faster rate, thus sputtering deposition more efficiently and in a space-efficient manner.

[0076] Figure 2 It shows Figure 1 Other features of the sputtering deposition apparatus 100 are shown. Figure 1 A plan view of the sputtering deposition apparatus 100, for clarity, omitting the substrate 104, part of the transport system 110 and part of the plasma 120.

[0077] exist Figure 2 In the example, the target support assembly 108 is arranged to support a first target 102a using a first target support assembly, a second target 102b using a second target support assembly, and a third target 102c using a third target support assembly. The first, second, and third target support assemblies together form the target support assembly 108. For clarity, in... Figure 2 The target support component is omitted in the text, but in Figure 3 The target support assembly is shown in more detail below. However, in other examples, the target support assembly may include more or fewer target support components. Figure 2 In this design, the first, second, and third targets 102a, 102b, and 102c each comprise different materials. For example, the material of the first target may differ from the material of the second target. However, in other cases, the first, second, and / or third targets may comprise some or all of the same material. For example... Figures 1 to 4 In one example, the target support assembly 108 is arranged to support a plurality of targets, at least one of which may be smaller than the others. Smaller targets may be easier to handle, store, and / or transfer to one or more target support assemblies, for example, when the targets are to be stored in a vacuum environment.

[0078] For reference Figure 1 The explanation is as follows: Figure 2 The first, second, and third targets 102a, 102b, and 102c shown each extend along the conveying direction D, which in this case is perpendicular to the rotation axis 116 of the drum 114. The first, second, and third targets 102a, 102b, and 102c extend from the first side of the sputtering deposition zone 112 (…). Figure 1 (left side) extends to the second side of sputtered deposition zone 112 ( Figure 1 (on the right side) so that materials for the first, second, and third targets 102a, 102b, and 102c can be deposited on the substrate 104 using sputtering deposition. In this case, the first, second, and third target support assemblies can also extend in a direction perpendicular to the rotation axis 116 of the roller 114. For example, the first, second, and third target support assemblies can extend from the first side of the sputtering deposition region 112 to the second side of the sputtering deposition region 112 to properly support the first, second, and third targets 102a, 102b, and 102c for depositing materials for the first, second, and third targets 102a, 102b, and 102c on the substrate 104 within the sputtering deposition region 112.

[0079] In an example where the conveying system 110 includes a bending member (e.g., roller 114), the target support assembly (e.g., including a target support assembly, such as...) Figure 3 The first, second, and third target support assemblies shown can be arranged to support at least one target to substantially conform to the curve of at least a portion of the bending member. For example, target support assembly 108 can be arranged to support one or more targets to substantially conform to the curve of at least a portion of the bending member. A target support assembly can be considered to support at least one target to substantially conform to the curve of at least a portion of the bending member, wherein at least one target, for example, replicates or otherwise follows the curve of at least a portion of the bending member. For example, the target support assembly can support at least one target along a bending path that shares a common curve center with the bending member but has a different radius of curvature, for example, larger than the radius of curvature of the bending member. For example, at least one target can be arranged along a bending path that is substantially parallel to at least a portion of the bending member but radially offset from at least a portion of the bending member.

[0080] The at least one target itself may have a curved surface that substantially conforms to the curve of at least a portion of a curved member. In some examples, at least one of the following is present: a first surface of a first target 102a facing the conveying system is curved, a second surface of a second target 102b facing the conveying system is curved, or a third surface of a third target 102c facing the conveying system is curved. A curved surface can be considered curved when it deviates from a flat surface. For example, the target support assembly 108 may be arranged to support at least one target having a surface that is at least partially curved around the conveying system 110 for the conveying substrate 104. Such examples are in Figure 1 As shown in [the image]. Figure 1 In this configuration, the corresponding surface of each target follows a curved path that substantially conforms to and can be considered as replicating a portion of the curve of at least a part of the curved member (in this case, the lower part of roller 114). However, in other cases, at least one target may not have a curved surface, but may instead have a flat surface, for example, located within a flat surface.

[0081] In other cases, instead of having a curved surface, the target support assembly 108 may be arranged to support multiple targets along at least a portion of the curve of the curved member, for example, end-to-end (although this is not necessarily the case). In this case, the surface of one target may define a surface forming an obtuse angle relative to the surface of another target. The obtuse angle may be selected such that the targets together are arranged in a curve approximating the curved path C.

[0082] In other cases, the target support assembly 108 may be arranged to support at least one target having a planar surface rather than a curved surface. Alternatively or additionally, the target support assembly 108 may be arranged to support at least one target in a plane, such as parallel to the plane of the substrate 104 (which, for example, corresponds to the transport direction D) when the target is fed into the sputtering deposition apparatus 100, rather than conforming to the curve of a curved member.

[0083] exist Figures 1 to 4 In the example, the first target support assembly includes first and second support portions 108a' and 108a', as shown below. Figure 3As shown. A first support portion 108a' is arranged to support a first portion 102a' of the material of the first target 102, and a second support portion 108a" is arranged to support a second portion 102a" of the material of the first target 102. However, in other examples, the first and second support portions 108a' may support different target materials. The first target support assembly may include more or fewer support portions, each of which may support one or more targets. In this example, the first target 102a is discontinuous between the first and second support portions 108a' and 108a"; in other words, the first portion 102a' of the first target 102a is disconnected, separated, or not in contact with the second portion 102a" of the first target 102a. However, the first and second portions 102a', 102a" can be considered as forming part of the same first target 102a, for example, where the first and second portions 102a', 102a" comprise the same material, or where the first and second portions 102a', 102a" are supported by the same target support assembly and / or associated with the same target magnetic element 126a (discussed further below). In other cases, the first target can be continuous such that the central portion of the first target overlaps with the gap between the first and second support portions 108a', 108a"

[0084] In this example, the first and second support portions 108a' and 108a' are arranged at an angle relative to each other. This is in Figure 3 It is shown more clearly in the middle, Figure 3 The rotation axis 116 along the roller 114 is shown. Figure 2 The target support assembly 108. In this case, there is an obtuse angle between the surface of the first support portion 108a' arranged to support the first portion 102a' of the first target 102 and the surface of the second support portion 108a' arranged to support the second portion 102a' of the first target 102.

[0085] This arrangement facilitates the deposition of material from the first target 102 to form the first stripe on the first portion of the substrate 104. For example, with this arrangement, the material from the first target can be more compactly arranged in the area overlapping the first portion of the substrate during transport of the substrate 104 by the transport system 110. Therefore, this can increase the density of material deposited on the first portion of the substrate 104 by the first target 102 and reduce or limit the deposition of material from the first target 102 at other locations on the substrate 104.

[0086] In this example, the sputtering deposition apparatus 100 includes a first target magnetic element 126a associated with a first target 102a, a second target magnetic element 126b associated with a second target 102b, and a third target magnetic element 126c associated with a third target 102c. However, in other cases, there may be more or fewer target magnetic elements than targets.

[0087] In this example, the first target support assembly (in this case including first and second support portions 108a', 108a") includes a first target magnetic element 126a. The first target magnetic element 126a may be located below the first target support assembly such that, in use, the first target 102a is located between the first target magnetic element 126a and the plasma 120 generated by the plasma generating device 106. For example, the first target support assembly may be arranged to support the first target 102a between the first target magnetic element 126a and the delivery system 110. The target support assembly 108 may also or alternatively be arranged to support the second target 102b between the second target magnetic element 126b and the delivery system 110 and / or the third target 102c between the third target magnetic element 126c and the delivery system 110. Figure 3 The first target magnetic element 126a forms part of the first target support assembly. In other cases, the first target magnetic element 126a may be a separate element and / or may be located at different positions relative to the first target support assembly.

[0088] The first target magnetic element 126a can be considered to provide bias for each target, allowing control of the magnetic field associated with the first target. For example, the magnetic field provided by the first target magnetic element 126a can be used to confine plasma 120 to a region adjacent to the first target 102 supported by the first target support assembly. This is in Figure 3 The diagram schematically shows that the plasma 120 has a first portion 120a extending toward the first target 102a and the first and second portions 102a', 102a" of the plasma 120a.

[0089] By controlling the magnetic fields associated with different targets, the material deposition on different targets can be controlled sequentially. For example, sputtering deposition apparatus 100 may include a controller arranged to control a first magnetic field provided by a first target magnetic element 126a to control the sputtering deposition of material on the first target 102a. The controller may alternatively or additionally be arranged to control a second magnetic field provided by a second target magnetic element 126b to control the sputtering deposition of material on the second target 102b. For example, one or more of the target magnetic elements 126a, 126b, and 126c may be electromagnets and may have a magnetic field strength controllable using a suitable controller. Such a controller may include a processor, such as a microprocessor, configured to control a current passing through the electromagnet, which in turn controls the magnetic field strength provided by the electromagnet. The term "controlling the magnetic field" as used herein can be considered to refer to any characteristic of the magnetic field, including its strength.

[0090] In some cases, during the transfer of substrate 104 through sputtering deposition region 112, a first magnetic field associated with the first target 102a and a second magnetic field associated with the second target 102b can be generated, for example, using a first target magnetic element 126a to generate the first magnetic field and a second target magnetic element 126b to generate the second magnetic field. The first magnetic field may differ from the second magnetic field, for example, in terms of magnetic field strength or another characteristic such as the direction of magnetic field lines. As described above, controlling the magnetic fields associated with the first and second targets 102a, 102b in this way can be used to control the amount of material of the first and second targets 102a, 102b sputtered onto substrate 104. This increases the flexibility of sputtering deposition apparatus 100 and, for example, allows for direct control of the relative amounts of different target materials deposited on substrate 104. The magnetic field can be considered as being associated with a target, wherein the magnetic field is generated by a target magnetic element associated with the target, such as a target magnetic element that is closer to a particular target than other targets. The magnetic field lines of this magnetic field may have a greater density near this target than near another target, for example, making the magnetic field strength near this target higher than the magnetic field strength near another target (which may be adjacent or neighboring).

[0091] Figure 2 The third portion 120c of the plasma is shown in plan view; other portions of the plasma are omitted for clarity. Due to the third magnetic field provided by the third target magnetic element 126c below the third target support assembly, the third portion 120c of the plasma is substantially confined to an elongated form, extending along the length of the third target 102c supported by the third target support assembly. This facilitates the sputtering of the third target 102c and thus the deposition of material from the third target 102c onto the substrate 104. Therefore, in, for example... Figures 1 to 4 In the example, where the target is elongated along the transport direction D of the transport system 110 transport substrate 104, a portion of the plasma (e.g., a third portion 120c of the plasma) can be substantially confined such that this portion of the plasma is elongated along the transport direction D. This confinement of the plasma portion can be performed by a confining device, which may include target magnetic elements and / or confining magnetic elements. Figures 1 to 4 In the example, the first, second, and third portions of the plasma 120a, 120b, and 120c are each elongated along the transport direction D; the first and second portions 120a and 120b, for example, have in a planar view a similar shape to... Figure 2 The third part 120c shown has a similar shape. However, this is merely an example; in other cases, the plasma or a portion thereof may be restricted differently.

[0092] Regions in sputtered deposition zone 112 lacking magnetic elements (e.g., target magnetic elements or confinement magnetic elements) typically exhibit lower magnetic field strengths, such as lower density magnetic field lines. This reduces the confinement effect in these regions, which influences the plasma configuration. Figure 2 As seen in the diagram, the third portion 120c of the plasma expands in the outer region (where the third target magnetic field element is absent) more than in the central region (where the third target magnetic field element is present), and for example, has a greater width. This gives the third portion 120c of the plasma a roughly dog-bone shape in a planar view. A roughly dog-bone shape is, for example, a shape having an elongated central portion and two opposing ends located on either side of the elongated central portion, the width of which is greater than the width of the elongated central portion. The shape of the plasma typically depends on the configuration of the magnetic elements within and / or around the sputtering deposition region 112 and can vary over time because the plasma is generally not static. Furthermore, the magnetic field provided by the magnetic elements can change over time, which can further alter the shape or other configuration of the plasma.

[0093] exist Figures 1 to 4 In this design, the first, second, and third target support assemblies are identical to each other. A description of one of the first, second, and third target support assemblies should apply to any other one of the first, second, and third target support assemblies. Similarly, the first, second, and third target magnetic elements 126a, 126b, and 126c are... Figures 1 to 4 The descriptions of one of the first, second, and third target magnetic elements 126a, 126b, and 126c are identical to each other. However, it should be understood that in other examples, at least one of the first, second, and third target support assemblies may differ from the other assemblies, and / or at least one of the first, second, and third target magnetic elements 126a, 126b, and 126c may differ from the other elements.

[0094] from Figure 1 As can be seen, the transport system 110 of the sputtering deposition apparatus 100 is arranged to transport the substrate 104 from the first side of the sputtering deposition region 112. Figure 1 The sputtering deposition zone 112 shown on the left side) is transferred to the second side of the sputtering deposition zone 112 ( Figure 1(The right side of the sputtering deposition region 112 shown). In this example, one or more target support assemblies 108 are arranged to support at least two targets, with a corresponding gap between the at least two targets extending from a first side of the sputtering deposition region 112 to a second side of the sputtering deposition region 112. For example, one or more target support assemblies 108 may include a first target support assembly arranged to support at least a first target 102a and a second target support assembly arranged to support at least a second target 102b, such that a gap extending from the first side of the sputtering deposition region 112 to the second side of the sputtering deposition region 112 exists between the first target support assembly and the second target support assembly. A gap 128 may also exist between the first target 102a and the second target 102b. The gap 128, for example, corresponds to a region between the first target support assembly and the second target support assembly, through which the first target support assembly is separated from the second target support assembly. In some cases, target material may not be present in the gap 128. The gap 128 may also lack other intermediate elements between the first target 102a and the second target 102b. When the substrate 104 is conveyed through the sputtering deposition region 112, this, for example, prevents other materials from being deposited on the portion of the substrate 104 corresponding to the gap 128.

[0095] As the gap 128 extends from the first side of the sputtering deposition region 112 to the second side (e.g., opposite to the first side) of the sputtering deposition region 112, a portion of the substrate 104 overlaps with the gap 128 during the movement of the substrate 104 through the sputtering deposition region 112. When the substrate 104 passes through the sputtering deposition region 112, this portion of the substrate 104, for example, does not overlap with or cover the first or second targets 102a, 102b. Therefore, this results in a corresponding deposition gap appearing on this portion of the substrate 104.

[0096] This is Figure 4 It is shown more clearly in the middle, Figure 4 The illustration shows the process in use. Figures 1 to 3 A top view of the sputtering deposition apparatus 100. (See attached image.) Figure 4As shown, after passing through the sputtering deposition region 112, the substrate 104 has a first stripe 130 on a first portion of the substrate 104, a second stripe 132 on a second portion of the substrate 104, a third stripe 134 on a third portion of the substrate 104, a fourth stripe 136 on a fourth portion of the substrate 104, and a fifth stripe 138 on a fifth portion of the substrate 104. In this example, the first stripe 130 is a material stripe of the first target 102a, the second stripe 132 is the exposed surface of the second portion of the substrate 104, the third stripe 134 is a material stripe of the second target 102b, the fourth stripe 136 is the exposed surface of the third portion of the substrate 104, and the fifth stripe 138 is a material stripe of the third target 102c. Thus, the sputtering deposition apparatus 100 can be used to provide sputtering deposition of target material 102 supported by one or more target support assemblies 108, such that the first stripe 130 includes target material with a different density and / or different composition than the second stripe 132.

[0097] exist Figures 1 to 4 In the example, the first stripe 130 and the second stripe 132 have different target material densities. In this case, the first stripe 130 has a higher density target material than the second stripe 132 (in this case, the target material of the first target 102a). The second stripe 132 may include a lower density material of the first target 102a and a lower density material of the second target 102b. For example, the second stripe 132 may be substantially devoid of material from the first target 102a and / or the second target 102b, such that target material (e.g., material from the first target 102a and / or the second target 102b) is substantially absent in the second stripe 132. The second stripe 132 may be considered substantially free of the given material, wherein the given material is not present within the measurement tolerance, is present in a negligible amount, such as a relatively small or insignificant amount, or is present in a sufficiently small amount that no further processing is required to remove the material before the substrate 104 can be used for its intended purpose. The material stripe is, for example, an elongated or extended material stripe. The width of the stripe may be less than its length, and thus may correspond to a material strip. Viewed along the length of the stripes, the opposite edges of the stripes can be roughly parallel to each other, although this is not required. For example, the long edges of the material stripes may be somewhat uneven or non-uniform, including deviations rather than being along precise straight lines. However, the material can still be considered to correspond to stripes that are typically elongated in shape.

[0098] In the example described herein, as substrate 104 is conveyed by transport system 110 through sputtering deposition region 112, the positioning of the target material relative to substrate 104 results in a stripe pattern being provided on substrate 104. This allows for the provision of a pattern of at least two stripes on substrate 104 during a single pass through sputtering deposition apparatus 100 without further processing. Therefore, patterned substrate 104 can be produced more efficiently and directly than in other methods. Furthermore, target material waste can be reduced because target material is deposited on the desired area of ​​substrate 104 without being deposited on other areas (e.g., the second region of substrate 104 corresponding to the second stripe 132). This avoids the need to remove target material from the second region of substrate 104, and the subsequent waste of the removed target material.

[0099] In example Figure 4 In the example, the first, second, and third stripes 130, 132, 134 can be generated by transferring a first portion of substrate 104 in a first region substantially overlapping with the first target 102a, a second portion of substrate 104 in a second region substantially overlapping with the gap 128 between the first target 102a and the second target 102b, and a third portion of substrate 104 in a third region substantially overlapping with the second target 102b. A region is considered substantially overlapping with the target when it precisely overlaps with the target or within measurement or manufacturing tolerances. In some cases, a region is considered substantially overlapping with the target when sputtering deposition of target material results in the presence of target material within the region. For example, the coverage area of ​​this region may be larger than the target surface closest to the transfer system 110 because the target material may have spread or dispersed during sputtering deposition.

[0100] The target support assembly 108 can be arranged to support one or more targets, and no intermediate elements are present between the one or more targets and the substrate 104 during the transport of the substrate 104 by the transport system 110 through the sputtering deposition area 112. In this way, the target material 102 can be sputtered onto the substrate 104 by the sputtering deposition apparatus 100 without the use of masks or other obstructing elements, such as baffles or shields. This can reduce the waste of target material due to deposition on masks. Furthermore, deposition can be performed continuously or for a longer period of time than other methods, such as batch processing using masks, before stopping. This can thus improve deposition efficiency. In other cases, at least one intermediate element can be arranged between the target material 102 and the substrate 104 during the processing of the substrate 104 by the sputtering deposition apparatus 100. However, fewer intermediate elements, such as fewer masks, may be present compared to other methods. Post-processing of the substrate 104 can also be reduced compared to other methods. For example, the density of material deposited on areas of the substrate intended to remain uncoated may be lower than in other cases. Compared to other cases where the deposited material has a higher density, this material can be removed more easily or more effectively.

[0101] exist Figures 1 to 4 In the example, the gap 128 is elongated along the transport direction D, and the transport system 110 is arranged to transport the substrate 104 in that transport direction D. This allows for the provision of elongated stripes on the substrate 104 that contain less target material than other stripes (e.g., the second stripe 132) in a simple manner.

[0102] Similarly, in such an example, the target support assembly 108 can be arranged to support a first target 102a such that the first target 102a is elongated along the transport direction D. The target support assembly 108 can additionally or alternatively be arranged to support a second target 102b such that the second target 102b is elongated along the transport direction D, and / or support a third target 102c such that the third target 102c is elongated along the transport direction D. This facilitates the deposition of stripes on the substrate 104. Furthermore, by using elongated targets, the uniformity of the material deposited within a given stripe can be improved.

[0103] Figures 1 to 4 The principle behind the sputtering deposition equipment 100 can be widely applied to generate various material patterns on the substrate 104. Figures 5 to 10 It shows the use of Figures 1 to 4 Other examples of the principle of sputtering deposition equipment 100.

[0104] Figure 5 and 6 The various parts of the sputtering deposition apparatus 200 are schematically shown in a plan view. Apart from the construction of the target material 202 and one or more target support assemblies for supporting the target material 202, Figure 5 and 6 Sputter deposition equipment 200 and Figures 1 to 4 The sputtering deposition equipment is the same as 100. Figure 5 With Figure 2 The same view shown for sputtering deposition apparatus 100 also shows sputtering deposition apparatus 200. Figure 6 With Figure 4 The same view shown for sputtering deposition apparatus 100 illustrates sputtering deposition apparatus 200. Figure 5 and Figure 6 Zhongyu Figures 1 to 4 Features that are similar to the corresponding features are labeled with the same reference number, but increased by 100; the corresponding descriptions also apply.

[0105] exist Figure 5 In the example, the target support assembly is arranged to support targets 202 of varying lengths along an axis substantially perpendicular to the conveying direction D (e.g., along the rotation axis 216 of the roller). Figure 5 In the target 202, there are a first portion 140a having a first length at a first position along axis 216 and a second portion 140b having a second length at a second position along axis 216, the second length being different from the first length (and in this case, less than the first length). The first and second lengths can be obtained along the transport direction D, for example, in a direction substantially parallel to the transport direction D.

[0106] In this case, target 202 is typically T-shaped in the plan view. However, in other examples, target 202 can be other shapes in the plan view; in any case, its length along the axis substantially perpendicular to the transport direction D varies. The target support assembly can have any suitable shape or configuration to support target 202. For example, in this case, the target support assembly can also typically be T-shaped in the plan view, although other shapes are also possible.

[0107] During the use of the sputtering deposition apparatus 200, a first portion of substrate 204 can be conveyed within a first region substantially overlapping with a first portion 140a of target 202, and a second portion of substrate 204 can be conveyed within a second region substantially overlapping with a second portion 140b of target 202. When substrate 204 is conveyed in this manner, for example, through a sputtering deposition region, sputtering deposition of material from target 202 can be achieved, resulting in a first stripe 230 on the first portion of substrate 204 and a second stripe 232 on the second portion of substrate 204. The first stripe 230 includes at least one of target material 202 with a different density (also referred to as target material) or a target material with a different composition than the second stripe 232. In the present case, the second length of the second portion 140b is less than the first length of the first portion 140a of target 202. Therefore, when substrate 204 is conveyed through the sputtering deposition apparatus 200, the time for which a given portion of substrate 204 overlaps with the second portion 140b of target 202 is shorter than the time for which it overlaps with the first portion 140a of target 202. This results in a lower target material density deposited on the second portion of substrate 204 (which passes through the second portion 140b of target 202) than on the first portion of substrate 204 (which passes through the first portion 140a of target 202).

[0108] Figure 5 and 6 The sputtering deposition apparatus 200 can be used to deposit two adjacent stripes of target material with different densities on a substrate 204 in an efficient manner, for example without using intermediate elements such as masks.

[0109] Figure 7 and 8 The various parts of the sputtering deposition apparatus 300 are schematically shown in a plan view. Apart from the construction of the target material 302 and one or more target support assemblies for supporting the target material 302, Figure 7 and 8 Sputter deposition equipment 300 and Figures 1 to 4 The sputtering deposition equipment is the same as 100. Figure 7 With Figure 2 The same view shown for the sputtering deposition apparatus 100 also shows the sputtering deposition apparatus 300. Figure 8 With Figure 4 The same view shown for sputtering deposition apparatus 100 illustrates sputtering deposition apparatus 300. Figure 7 and Figure 8 Zhongyu Figures 1 to 4 Features that are similar to the corresponding features are labeled with the same reference number, but with an increase of 200; the corresponding descriptions also apply.

[0110] exist Figure 7 and Figure 8In the example, one or more target support assemblies are arranged to support a first target 302a and a second target 302b such that the second target 302b is offset from the first target 302a along an axis perpendicular to the conveying direction D but substantially in the conveying direction D, said axis being, for example, the rotation axis 316 of the roller 314. When the first and second targets are offset from each other in this manner, if the offset is large enough, a gap may exist between the first and second targets extending from the first side of the sputtering deposition area to the second side of the sputtering deposition area (e.g., in...). Figure 1-4 (in the example). However, in Figure 7 and 8 In the example, the offset between the first and second targets 302a, 302b is insufficient for such a gap. The offset can be considered, for example, as the displacement of the second target relative to the first target in a specific direction, such as a displacement along an axis perpendicular to the transport direction D. Figure 7 and 8 In Figure 7 In this sense, for example, the displacement achieved between the upper edge of the first target 302a and the upper edge of the second target 302b is less than the width of the second target 302b along axis 316. For this reason, there exists a path from the first side of the sputtered deposition zone to the second side of the sputtered deposition zone, which passes through the second target 302b and then the first target 302a, or overlaps with it.

[0111] The target support assembly can also, or alternatively, be arranged to support the first target 302a and the second target 302b, such that the second target 302b is offset from the first target 302a along the transport direction D (e.g., along a second axis parallel to the transport direction D). This is Figure 7 and 8 In this example, the first and second targets 302a and 302b are... Figure 7 In the sense of horizontal (i.e., along the direction of transport D) and in Figure 7 They are offset from each other vertically (i.e., perpendicular to the transport direction D) or otherwise displaced. This provides further flexibility for depositing material stripes on substrate 304 according to a desired pattern. One or more target support components may also be offset from each other along and / or perpendicular to the transport direction D.

[0112] Due to this arrangement of the first and second targets 302a, 302b, the substrate 304 can be conveyed by the transport system of the sputtering deposition apparatus 300 to provide sputtering deposition of target materials for the first and second targets 302a, 302b, such that a first stripe 330 is formed on a first portion of the substrate 304, a second stripe 332 is formed on a second portion of the substrate 304, and a third stripe 334 is formed on a third portion of the substrate 304. In this case, the first stripe 330 is a stripe of material from the first target 302a, and the third stripe 334 is a stripe of material from the second target 302b. In this example, the material of the first target 302a is different from the material of the second target 302b. The second stripe 332 is a combination of the materials of the first target 302a and the second target 302b. Therefore, in this case, the composition of the second stripe 332 is different from the composition of the first stripe 330. The second stripe 332 may also include target materials of different densities, for example, target materials with a density greater than one or both of the first and third stripes 330, 334.

[0113] In this configuration, the second stripe 332 is provided by the positions of the first and second targets 302a and 302b relative to the substrate 304 as the substrate 304 is conveyed through the sputtering deposition apparatus 300. For example, one or more target support components may be arranged to support the first and second targets 302a and 302b such that when the substrate 304 is in a first position, a second portion of the substrate 304 (on which the second stripe 332 is disposed) overlaps with the first target 302a but not with the second target 302b, and when the substrate 304 is in a second position, the second portion of the substrate 304 overlaps with the second target 302b but not with the first target 302a. Thus, when the substrate 304 is in the first position within the sputtering deposition area, the deposition on the second portion is due to the first target 302a rather than the second target 302b. When the substrate 304 is in the second position within the sputtering deposition area, the deposition on the second portion is due to the second target 302b rather than the first target 302a. In this configuration, as the substrate 304 moves through the sputtering deposition area, the substrate 304 is conveyed to a second position after the first position. However, this is just an example. In other examples, with Figure 7 Compared to the positions shown, the positions of the first and second targets 302a and 302b can be reversed. For example, the second target 302b is closer to the first side of the sputtering deposition zone than the first target 302a.

[0114] By using Figure 7 and 8The sputtering deposition apparatus 300 transports a substrate 304, a second portion of which (on which a second stripe 332 is provided) can be transported within a first region of the sputtering deposition area, which substantially overlaps with a first target 302a. The same portion of the substrate 304 (in this case, the second portion, on which the second stripe 332 is provided) can then be transported within a second region of the sputtering deposition area, which substantially overlaps with a second target 302b. Thus, a combination of materials from the first and second targets 302a, 302b can be deposited on the second portion of the substrate 304 to form the second stripe 332.

[0115] The combination of the material of the first target 302a and the material of the second target 302b of the second stripe 332 can be a mixture of the materials of the first and second targets 302a and 302b. Therefore, Figure 7 and 8 The sputtering deposition apparatus 300 allows for the direct and flexible deposition of mixed compositions. In this case, a material layer of the first target 302a can be deposited on the substrate 304, and a material layer of the second target 302b can subsequently be deposited on the material layer of the first target 302a. However, in other cases, the mixing of the materials of the first and second targets 302a, 302b can occur within the sputtering deposition region, for example, after the material has been ejected from the first and second targets 302a, 302b, but before it has been deposited on the surface of the substrate 304.

[0116] In this example, the first and second targets 302a, 302b are typically rectangular in the plan view, although this is just an example and other shapes are possible. One or more target support components can have any suitable shape or structure to support the first and second targets 302a, 302b.

[0117] Figure 9 and 10 The various parts of the sputtering deposition apparatus 400 are schematically shown in a plan view. Apart from the construction of the target material 402 and one or more target support assemblies for supporting the target material 402, Figure 9 and 10 Sputtering deposition equipment 400 and Figures 1 to 4 The sputtering deposition equipment is the same as 100. Figure 9 With Figure 2 The same view shown for the sputtering deposition apparatus 100 also shows the sputtering deposition apparatus 400. Figure 10 With Figure 4 The same view shown for sputtering deposition apparatus 100 illustrates sputtering deposition apparatus 400. Figure 9 and Figure 10 Zhongyu Figures 1 to 4 Features that are similar to the corresponding features are labeled with the same reference number, but increased by 100; the corresponding descriptions also apply.

[0118] Figure 9 and 10 The sputtering deposition equipment 400 is similar to Figure 7 and 8 The sputtering deposition apparatus 300 can be used to provide a first stripe 430 of material for a first target 402a on a first portion of a substrate 404, a second stripe 432 of a combined material of the first target 402a and the second target 402b on a second portion of the substrate 404, and a third stripe 434 of material for the second target 402b on a third portion of the substrate 404. However, in, for example... Figure 9 and 10 In the example, one or more target support assemblies are arranged to support a first target 402a and a second target 402b such that at least one of the first target 402a and the second target 402b is angled relative to the transport direction D. One or more target support assemblies themselves may be angled relative to the transport direction D. When the substrate 404 is fed into the sputtering deposition apparatus 400, the first and second targets 402a, 402b may be angled relative to the transport direction D in a plane parallel to the surface of the substrate 404, or in a plane parallel to a plane tangent to the surface of the first or second target 402a, 402b. For example, in a plan view of the sputtering deposition apparatus 400, at least one of the first and second targets 402a, 402b may be angled relative to the transport direction D. Angles less than 90 degrees are considered tilted. For example, the angle between at least one of the first and second targets 402a, 402b and the transport direction D may be greater than 0 degrees and less than 90 degrees (within measurement tolerances).

[0119] By arranging the first and second targets 402a and 402b in this manner, for example as follows: Figure 9 and 10 As shown, when the substrate 404 is conveyed by the conveying system, a portion of the substrate 404 (in this case, the second portion of the substrate 404) passes over or overlaps with a portion of the second target 402b, and subsequently passes over a portion of the first target 402a. This causes a combination (e.g., a mixture) of materials from the first and second targets 402a and 402b to be deposited as a second stripe 432 on the second portion of the substrate 404.

[0120] exist Figure 9 and 10In the example, the first and second targets 402a and 402b are both elongated rectangles in the plan view. In this case, the first and second targets 402a and 402b are each at the same tilt angle relative to the transport direction D. However, this is merely an example; in other cases, the first and second targets may have different shapes or positions. For example, the angle between the first target 402a and the transport direction D may differ from the angle between the second target 402b and the transport direction D, for example, to control the relative amounts of material deposited on the first and second targets as the second stripe 432. One or more target support assemblies may have any suitable shape or structure to support the first and second targets 402a and 402b.

[0121] Figure 11 and 12 The various parts of the sputtering deposition apparatus 500 are schematically shown. Except for the arrangement of the limiting magnetic elements 524a, 524b and antennas 522a, 522b, Figure 11 and 12 Sputter deposition equipment 500 and Figures 1 to 4 The sputtering deposition equipment is the same as 100. Figure 11 With Figure 1 The same view shown for the sputtering deposition apparatus 100 also shows the sputtering deposition apparatus 500. Figure 12 With Figure 2 The same view shown for sputtering deposition apparatus 100 illustrates sputtering deposition apparatus 500. However, in Figure 12 In the image, the first and second rollers 518a and 518b are omitted, so the first and second limiting magnetic elements 524a and 524b can be seen more clearly. Figure 11 and Figure 12 Zhongyu Figures 1 to 4 Features that are similar to the corresponding features are labeled with the same reference number, but with an increase of 400; the corresponding descriptions also apply.

[0122] In some cases, for example Figure 11 and 12 The sputtering deposition apparatus 500 may include at least one confining magnetic element 524a, 524b, which is elongated in a direction substantially perpendicular to the transport direction D, for example, within measurement tolerances or within a few degrees (e.g., within 5 or 10 degrees) perpendicular to the transport direction D. In this case, the confining magnetic elements 524a, 524b may be arranged such that the region of relatively high magnetic field strength provided between the confining magnetic elements 524a, 524b substantially follows the curve of a curved path C. Figure 11 and 12In the example schematically shown, two limiting magnetic elements 524a and 524b are located on opposite sides of the roller 514, and each is positioned above the lowest part of the roller 514 (in Figure 11 (In the sense of the word). The confining magnetic elements 524a and 524b essentially confine the plasma 520 to follow a curved path C on both sides of the drum 514, for example, the web of substrate 504 being fed onto the feed side of the drum 514 and the web of substrate 504 being fed out of the drum 514. Therefore, having at least two confining magnetic elements can (further) increase the area of ​​substrate 504 exposed to plasma 520, and thus increase the area that can be sputtered deposited. For example, for a given degree of deposition, this can allow the web of substrate 504 to be fed through the roll-to-roll apparatus at a (still) faster rate, and thus for more efficient sputtering deposition. As for Figures 1 to 4 Restricting magnetic components 124a, 124b Figure 11 and Figure 12 One or more limiting magnetic elements 524a, 524b may be electromagnetic, and the strength of the provided magnetic field can be controlled by a controller to adjust the plasma density at the substrate 504. This allows for increased operational flexibility of the sputtering deposition apparatus 500.

[0123] In some examples, one or more of the confining magnetic elements 524a, 524b may be provided by solenoids. Each solenoid may define an opening through which plasma 520 passes or is located during use. Figure 11 and 12 The example schematically shown can have two solenoids, and each solenoid can be angled such that the region of relatively high magnetic field strength provided between the solenoids is substantially along the curve of the curved path C. Thus, as... Figure 11 As shown, the generated plasma 520 can pass through a first solenoid (e.g., a confining magnetic element 524a) below the drum 514 (in... Figure 11 (In the sense of) entering the sputtering deposition region 512 and passing upward through the second solenoid (e.g., confining magnetic element 524b). For example, as Figure 12 As shown, one or more solenoids can be extended in a direction substantially perpendicular to the magnetic field lines generated inside them during use, and can be extended in a direction substantially perpendicular to the transport direction D, in which the substrate 504 is transported by the transport system 510.

[0124] Despite Figure 11 and 12Only two confining magnetic elements 524a and 524b are shown, but it should be understood that more confining magnetic elements (not shown), such as more solenoids (not shown), can be placed along the curved path of the plasma 520. This can allow for a stronger confining magnetic field, and thus allow for precise confining, and / or allow for more degrees of freedom in controlling the confining magnetic field.

[0125] In example Figure 11 and 12 In the example, sputtering deposition apparatus 500 may include one or more antennas 522a, 522b. Each of the antennas 522a, 522b may be an elongated antenna and extends in a direction substantially parallel to the longitudinal axis of the curved member (e.g., the axis of rotation 516 of the roller 514 passing through the origin of the radius of curvature of the curved roller 514). At least one of the antennas 522a, 522b may be linear, or extend in an approximately straight line rather than a curve. Figure 11 and 12 An example of this is shown. At least one antenna (collectively referred to as reference numeral 522) may extend along the length of one or more target support assemblies 508. Figure 11 and 12 In this embodiment, the antenna 522 is longer than one or more target support assemblies 508 along the rotation axis 516 of the roller 514 to generate a plasma 520 that extends over the target supported by the one or more target support assemblies 508. However, in other examples, the length of the antenna 522 may differ from the length of the one or more target support assemblies.

[0126] The examples above should be understood as illustrative. Further examples are conceivable. For instance, it should be understood that features of any of these examples can be combined to produce more complex patterns of deposited material on a substrate. For example, by positioning the target relative to the delivery system using one or more target support assemblies, the sputtering deposition apparatus according to the examples herein can be used to produce stripes of different materials, combinations of materials, or combinations lacking materials, and / or stripes of various sizes and / or spacings.

[0127] Figures 1 to 4 as well as Figure 11 and 12 Two example antenna configurations are shown. However, various other antenna configurations (or other plasma generating devices) may exist for generating plasma. For example, Figure 1 The antenna 122 shown has a curved shape, which can be considered approximately crescent-shaped. However, in other cases, a similar antenna can be used, but with a circular shape instead of a crescent shape. In this case, for example, a circular antenna with the same or similar radius of curvature as the curved member can be placed on each side of the drum, similar to... Figure 2 Antennas 122a and 122b are shown, but they have different shapes. In other cases, two antennas (e.g., two circular antennas) can be located on the same side of the drum, or two antennas can be placed on each side of the drum. In other cases, there can be multiple antennas similar to... Figure 12 The antenna 522 shown is an elongated antenna. These elongated antennas can be spaced apart, for example, placed at regular intervals around a curved member. In this case, the elongated antennas can be spaced apart in a ladder-like manner between one or more target support assemblies and the delivery system, for example, between a target supported by a target support assembly and a roller.

[0128] It should be understood that any feature described with respect to any example may be used alone or in combination with other features described, and may also be used in combination with one or more features of any other example or combination of other examples. Furthermore, equivalents and modifications not described above may be employed without departing from the scope of the appended claims.

Claims

1. A sputtering deposition apparatus, comprising: A plasma generation device is arranged to provide a single plasma for sputtering deposition of target material in a sputtering deposition zone; A conveying system is arranged to convey a substrate through the sputtering deposition area in a conveying direction; and One or more target support assemblies are arranged in the sputtering deposition region to support one or more targets for sputtering deposition of target material on a substrate using plasma. The one or more targets include at least a first target and at least a second target. The one or more target support assemblies are arranged to support the first and second targets such that at least one of the first and second targets is at an angle relative to the transport direction, such that in use, when the substrate is transported through the sputtering deposition region... A first stripe is deposited on a first portion of a substrate; and a second stripe is deposited on a second portion of the substrate, wherein the first stripe comprises at least one of a target material of a different density or a target material of a different composition than the second stripe, wherein the plasma generating device comprises one or more elongated antennas, the one or more elongated antennas being elongated along the transmission direction.

2. The sputtering deposition apparatus according to claim 1, wherein: The conveying system is arranged to convey the substrate from a first side of the sputtering deposition region to a second side of the sputtering deposition region; and The one or more target support assemblies include a first target support assembly arranged to support at least a first target and a second target support assembly arranged to support at least a second target. There is a gap between the first target support assembly and the second target support assembly, the gap extending from the first side of the sputtering deposition region to the second side of the sputtering deposition region.

3. The sputtering deposition apparatus according to claim 2, wherein, Having at least one of the following: the gap is elongated along the conveying direction, and the first target support assembly is elongated along the conveying direction; or The second target support assembly is elongated along the conveying direction.

4. The sputtering deposition apparatus according to claim 1, wherein: The conveying system is arranged to convey the substrate from its first position through the deposition area to its second position; and The one or more target support components are arranged to support a first target and a second target such that, at the first position, the deposition on the second portion is due to the first target and not the second target, and at the second position, the deposition on the second portion is due to the second target and not the first target.

5. The sputtering deposition apparatus according to claim 1, wherein, The one or more target support assemblies are arranged to support the first target and the second target such that the second target is offset from the first target within the sputtering deposition area and along an axis perpendicular to the transport direction but substantially in the transport direction.

6. The sputtering deposition apparatus according to claim 5, wherein, The axis is a first axis, and the one or more target support assemblies are arranged to support a first target and a second target, such that the second target is offset from the first target along the transport direction within the sputtering deposition zone.

7. The sputtering deposition apparatus according to any one of claims 2 to 6, comprising a first target magnetic element associated with the first target and a second target magnetic element associated with the second target.

8. The sputtering deposition apparatus of claim 7, further comprising a controller arranged to control at least one of the following: A first magnetic field provided by the first target magnetic element is used to control the sputtering deposition of material from the first target; or A second magnetic field, provided by the second target magnetic element, is used to control the sputtering deposition of material from the second target.

9. The sputtering deposition apparatus according to claim 7, wherein, The one or more target support components are arranged to perform at least one of the following: The first target is supported between the first target magnetic element and the transmission system; or The second target is supported between the second target magnetic element and the transmission system.

10. The sputtering deposition apparatus according to any one of claims 2 to 6, wherein, The material of the first target is different from the material of the second target.

11. The sputtering deposition apparatus according to claim 1, wherein, The transmission system is arranged to transmit the substrate along a curved path, and the one or more elongated antennas are bent in the same direction as the curve of the curved path.

12. The sputtering deposition apparatus according to any one of claims 1 to 6, comprising a confinement device arranged to provide a confinement magnetic field to substantially confine the plasma within the sputtering deposition region, thereby providing sputtering deposition of target material, wherein, The limiting device includes at least one limiting magnetic element, which is elongated along the transmission direction.

13. The sputtering deposition apparatus according to claim 12, wherein, The limiting device includes at least one additional limiting magnetic element, which is elongated in a direction substantially perpendicular to the transport direction.

14. The sputtering deposition apparatus according to any one of claims 1 to 6, wherein, The one or more target support assemblies are arranged to support the one or more targets as the substrate is conveyed through the sputtering deposition area by the conveying system, without any intermediate elements between the one or more targets and the substrate.

15. The sputtering deposition apparatus according to any one of claims 1 to 6, wherein, The conveying system includes rollers arranged to convey substrates in the conveying direction, wherein the conveying direction is substantially perpendicular to the axis of rotation of the rollers.

16. The sputtering deposition apparatus according to any one of claims 1 to 6, wherein, The conveying system includes a bending member, and the one or more target support assemblies are arranged to support the one or more targets to substantially conform to the curve of at least a portion of the bending member.

17. The sputtering deposition apparatus according to any one of claims 1 to 6, wherein, The surface of at least one of the targets facing the delivery system is curved.

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