Magnetic device

Abstract

According to an embodiment, a magnetic device includes a first element, a first transistor of a first conductivity type, a second transistor of a second conductivity type, and first to third wirings. The first element includes a first conductive member and a first laminate. The first conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first laminate includes a first magnetic layer. The first transistor includes a first terminal, a first other terminal, and a first gate. The second transistor includes a second terminal, a second other terminal, and a second gate. The first other terminal is electrically connected to the first portion. The second other terminal is electrically connected to the first magnetic layer. The first wiring is electrically connected to the second portion. The second wiring is electrically connected to the first gate and the second gate. The third wiring is electrically connected to the first terminal and the second terminal. A magnetic device capable of high density is provided.

Description

Technical Field

[0001] Embodiments of the present invention relate to magnetic devices. Background Art

[0002] Magnetic devices using a magnetic layer are used in storage devices, computing devices, etc. In magnetic devices, high density is desired.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent No. 6545853 Summary of the invention

[0006] The embodiments of the present invention provide a magnetic device that can be densified.

[0007] According to an embodiment of the present invention, a magnetic device includes a first element, a first transistor of a first conductivity type, a second transistor of a second conductivity type, a first wiring, a second wiring, and a third wiring. The first element includes a first conductive component and a first laminate. The first conductive component includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first laminate includes a first magnetic layer and a first opposing magnetic layer disposed between the third portion and the first magnetic layer. The first transistor includes a first end, a first other end, and a first gate. The second transistor includes a second end, a second other end, and a second gate. The first other end is electrically connected to the first portion. The second other end is electrically connected to the first magnetic layer. The first wiring is electrically connected to the second portion. The second wiring is electrically connected to the first gate and the second gate. The third wiring is electrically connected to the first end and the second end. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 It is a schematic perspective view illustrating the magnetic device according to the first embodiment.

[0009] Figure 2 (a) and Figure 2 (b) is a schematic diagram illustrating the magnetic device according to the first embodiment.

[0010] Figure 3 (a)~ Figure 3 (c) is a schematic diagram illustrating the magnetic device according to the first embodiment.

[0011] Figure 4 It is a schematic perspective view illustrating the magnetic device according to the first embodiment.

[0012] Figure 5 (a) and Figure 5 (b) is a schematic diagram illustrating the magnetic device according to the first embodiment.

[0013] Figure 6 It is a schematic diagram illustrating the magnetic device according to the first embodiment.

[0014] Figure 7 It is a schematic diagram illustrating the magnetic device according to the first embodiment.

[0015] Figure 8 It is a schematic diagram illustrating the magnetic device according to the first embodiment.

[0016] Fig. 9 It is a schematic perspective view illustrating a magnetic device according to the second embodiment.

[0017] Fig.10 (a) and Fig.10 (b) is a schematic diagram illustrating a magnetic device according to the second embodiment.

[0018] Fig.11 (a) and Fig.11 (b) is a schematic cross-sectional view illustrating a magnetic device according to the second embodiment.

[0019] Fig.12 It is a schematic cross-sectional view illustrating a magnetic device according to the second embodiment.

[0020] Fig.13 It is a schematic perspective view illustrating a magnetic device according to the second embodiment.

[0021] Fig.14 (a) and Fig.14 (b) is a schematic diagram illustrating a magnetic device according to the third embodiment.

[0022] Fig.15 (a)~ Fig.15 (e) is a schematic transparent plan view illustrating a magnetic device according to the third embodiment.

[0023] Fig.16 (a)~ Fig.16 (f) is a schematic transparent plan view illustrating a magnetic device according to the third embodiment.

[0024] Fig.17 (a)~ Fig.17 (c) is a schematic transparent plan view illustrating a magnetic device according to the third embodiment.

[0025] Fig.18 It is a schematic perspective view illustrating a magnetic device according to a third embodiment.

[0026] Fig.19 It is a schematic perspective view illustrating a magnetic device according to a third embodiment.

[0027] Fig. 20 It is a schematic perspective view illustrating a magnetic device according to a fourth embodiment.

[0028] Fig.21 It is a schematic plan view illustrating a magnetic device according to a fourth embodiment.

[0029] Fig. 22 It is a schematic plan view illustrating a magnetic device according to a fourth embodiment.

[0030] Fig.23 It is a schematic plan view illustrating a magnetic device according to a fourth embodiment.

[0031] Fig.24 It is a schematic plan view illustrating a magnetic device according to a fourth embodiment.

[0032] Fig.25 It is a schematic perspective view illustrating a magnetic device according to a fourth embodiment.

[0033] Fig.26 It is a schematic plan view illustrating a magnetic device according to a fourth embodiment.

[0034] Fig. 27 It is a schematic plan view illustrating a magnetic device according to a fourth embodiment.

[0035] Fig.28 It is a schematic plan view illustrating a magnetic device according to a fourth embodiment.

[0036] Fig.29 It is a schematic plan view illustrating a magnetic device according to a fourth embodiment.

[0037] Fig.30 It is a schematic plan view illustrating a magnetic device according to a fourth embodiment.

[0038] Fig.31 It is a schematic perspective view illustrating a magnetic device according to a fifth embodiment.

[0039] Fig.32 It is a schematic perspective view illustrating a magnetic device according to the sixth embodiment.

[0040] Fig.33 It is a schematic plan view illustrating a magnetic device according to the sixth embodiment.

[0041] Fig.34 It is a schematic plan view illustrating a magnetic device according to the sixth embodiment.

[0042] Fig.35 It is a schematic plan view illustrating a magnetic device according to the sixth embodiment.

[0043] Fig.36 It is a schematic plan view illustrating a magnetic device according to the sixth embodiment.

[0044] Fig.37 It is a schematic plan view illustrating a magnetic device according to the sixth embodiment.

[0045] Fig.38 It is a schematic diagram illustrating a magnetic device according to the seventh embodiment.

[0046] Fig.39 (a) and Fig.39 (b) is a schematic diagram illustrating a magnetic device according to the seventh embodiment.

[0047] Fig.40 It is a schematic diagram illustrating a magnetic device according to the seventh embodiment.

[0048] Fig.41 (a) and Fig.41 (b) is a schematic diagram illustrating a magnetic device according to the seventh embodiment.

[0049] Fig.42 (a)~ Fig.42 (d) is a schematic diagram illustrating a magnetic device according to the seventh embodiment.

[0050] Fig.43 It is a schematic diagram illustrating a magnetic device according to the seventh embodiment.

[0051] Fig.44 (a) and Fig.44 (b) is a schematic diagram illustrating a magnetic device according to the seventh embodiment.

[0052] Fig.45 (a)~ Fig.45 (c) is a schematic diagram illustrating a magnetic device according to the seventh embodiment.

[0053] Fig.46 It is a schematic diagram illustrating a magnetic device according to the seventh embodiment.

[0054] Fig.47 It is a schematic diagram illustrating a magnetic device according to the eighth embodiment.

[0055] Fig.48 It is a schematic diagram illustrating a magnetic device according to the eighth embodiment.

[0056] Fig.49 (a)~ Fig.49(e) is a schematic diagram illustrating a magnetic device according to the eighth embodiment.

[0057] Fig.50 It is a schematic diagram illustrating a magnetic device according to the eighth embodiment.

[0058] Fig.51 (a)~ Fig.51 (e) is a schematic diagram illustrating a magnetic device according to the eighth embodiment.

[0059] Fig.52 (a) and Fig.52 (b) is a cross-sectional view of a schematic diagram illustrating a part of the magnetic device according to the embodiment.

[0060] Fig.53 It is a schematic diagram illustrating a magnetic device according to an embodiment.

[0061] Fig.54 It is a schematic diagram illustrating a magnetic device according to an embodiment.

[0062] Fig.55 It is a schematic diagram illustrating a magnetic device according to an embodiment.

[0063] Fig.56 It is a schematic diagram illustrating a magnetic device according to an embodiment.

[0064] Fig.57 It is a schematic diagram illustrating a magnetic device according to an embodiment.

[0065] Fig.58 It is a schematic diagram illustrating a magnetic device according to an embodiment.

[0066] Fig.59 It is a schematic diagram illustrating a magnetic device according to an embodiment.

[0067] Fig.60 It is a schematic plan view illustrating a magnetic device according to an embodiment.

[0068] Fig.61 It is a schematic plan view illustrating a magnetic device according to an embodiment.

[0069] Fig.62 It is a schematic cross-sectional view illustrating a magnetic device according to an embodiment.

[0070] Fig.63 It is a schematic cross-sectional view illustrating a magnetic device according to an embodiment.

[0071] Fig.64 It is a schematic cross-sectional view illustrating a magnetic device according to an embodiment.

[0072] Fig.65It is a schematic cross-sectional view of the magnetic device related to the exemplary embodiment.

[0073] Fig.66 It is a schematic cross-sectional view of the magnetic device related to the exemplary embodiment.

[0074] Fig.67 It is a schematic cross-sectional view of the magnetic device related to the exemplary embodiment.

[0075] Fig.68 It is a schematic cross-sectional view of the magnetic device related to the exemplary embodiment.

[0076] Fig.69 It is a schematic cross-sectional view of the magnetic device related to the exemplary embodiment.

[0077] Fig.70 It is a schematic cross-sectional view of the magnetic device related to the exemplary embodiment.

[0078] Fig.71 It is a schematic cross-sectional view of the magnetic device related to the exemplary embodiment.

[0079] Fig.72 It is a schematic cross-sectional view of the magnetic device related to the exemplary embodiment.

[0080] Fig.73 It is a schematic cross-sectional view of the magnetic device related to the exemplary embodiment.

[0081] (Symbol description)

[0082] 11, 12: 1st and 2nd magnetic layers; 11E~18E: 1st to 8th elements; 11el, 12el: 1st and 2nd electrodes; 11m, 11om, 12m, 12om: magnetization; 11n, 12n: 1st and 2nd non-magnetic layers; 11o, 12o: 1st and 2nd opposing magnetic layers; 21: 1st conductive component; 21a~21e: 1st to 5th parts; 25L, 26L: lower end; 25e, 26e: 1st and 2nd conductive parts; 25i, 26i: 1st and 2nd insulating parts; 25p, 26p: part; 27i~27k: insulating part; 31, 32: 1st and 2nd connecting parts; 35, 36: 1st and 2nd semiconductor components; 70: control part; 7 0A: word line and source line control circuit; 70B: bit line control circuit; 75a~75j, 75r: conductive part; 77A~77K: 1st to 11th wiring; 78a~78t: connecting component; 79: semiconductor region; 110~112, 120~124, 130, 130a~130e, 131a~131f, 132a~132c, 133, 134, 140~142, 150, 160, 170~172, 180, 181, 185, 186, 187a~187f: magnetic device; BL1, BL2: bit line; CL, CL1, CL2: common line; CN1~CN4: 1st to 4th connecting component; DA1: anode ; DC1: cathode; DE1: 1st diode; Dn1, Dn2: 1st, 3rd other end; Dp1, Dp2: 2nd, 4th other end; Dr1, Dr2: 1st, 2nd drain; Drr, Drw: drain; DsL: metal silicide layer; DsL1: metal layer; DsL2: silicon layer; Dx1, Dx2: 1st, 2nd extension direction; Gn1, Gn2: 1st, 3rd gate; Gp1, Gp2: 2nd, 4th gate; Gr1, Gr2: 1st, 2nd gate; R-BL, RBL1~RBL4, RBL1-L, RBL1-R: bit line; R-WL: word line; RWL1~RWL4: word line; S1, S2: 1st, 2nd stack; SL , SL1, SL2: source line; Sn1, Sn2: 1st, 3rd end; Sp1, Sp2: 2nd, 4th end; Sr1, Sr2: 1st, 2nd source; Td1~Td9: 1st~9th other end; Tg1~Tg9: 1st~9th gate; Tn: transistor; Tn1, Tn2: 1st, 3rd transistor; Tp: transistor; Tp1, Tp2: 2nd, 4th transistor; Tr1~Tr13: 1st~13th transistor; Ts1~Ts9: 1st~9th end; W-BL, WBL, WBL1~WBL4: bit line; W-WL, WL: word line; WL1, WL2: word line; W / R-BL, W / R-BL1, W / R-BL2: bit line;W / R-WL, W / R-WL1, W / R-WL2, W / R-WL3, W / R-WL4: word lines; ic1: first current; rc1, rc2: read current; sf1, sf2: first and second sides; wc1, wc2: write current. ; DETAILED DESCRIPTION

[0083] Hereinafter, various embodiments of the present invention will be described with reference to the drawings.

[0084] The drawings are schematic or conceptual drawings, and the relationship between the thickness and width of each part, the ratio of the size between the parts, etc. are not necessarily the same as in reality. Even when the same part is shown, the mutual size and ratio may be expressed differently according to the drawings.

[0085] In the present specification and each drawing, the same reference numerals are given to the same elements as those in the previous description regarding the drawings already shown, and the detailed description is appropriately omitted.

[0086] (First embodiment)

[0087] Figure 1 It is a schematic perspective view illustrating the magnetic device according to the first embodiment.

[0088] like Figure 1 As shown, the magnetic device 110 according to the embodiment includes a first element 11E, a first transistor Tn1 of a first conductivity type, a second transistor Tp1 of a second conductivity type, a first wiring 77A, a second wiring 77B, and a third wiring 77C. Figure 1 As shown, the magnetic device 110 may also include a control unit 70. The first conductivity type is one of the n-type and the p-type. The second conductivity type is the other of the n-type and the p-type. Hereinafter, the first conductivity type is the n-type and the second conductivity type is the p-type.

[0089] The first element 11E includes a first conductive member 21 and a first laminate S1. The first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. The third portion 21c is located between the first portion 21a and the second portion 21b.

[0090] The first stacked body S1 includes the first magnetic layer 11 and the first counter magnetic layer 11 o . The first counter magnetic layer 11 o is located between the third portion 21 c and the first magnetic layer 11 .

[0091] A direction from the first portion 21 a toward the second portion 21 b is referred to as a first direction.

[0092] For example, the first direction is defined as the X-axis direction, a direction perpendicular to the X-axis direction is defined as the Z-axis direction, and a direction perpendicular to the X-axis direction and the Z-axis direction is defined as the Y-axis direction.

[0093] The second direction from the third portion 21c to the first magnetic layer 11 intersects the first direction. The second direction is, for example, the Z-axis direction.

[0094] In this example, the first stacked body S1 further includes a first nonmagnetic layer 11 n. The first nonmagnetic layer 11 n is located between the first counter magnetic layer 11 o and the first magnetic layer 11 .

[0095] The resistance of the first stack S1 can be changed. For example, the resistance of the first stack S1 can be changed according to the direction of the first current ic1 flowing through the first conductive member 21. The change in resistance is based on, for example, the magnetoresistance effect.

[0096] For example, the orientation of the magnetization 11m of the first magnetic layer 11 is substantially fixed. The magnetization 11om of the first opposing magnetic layer 11o can be changed by the first current ic1 flowing through the first conductive member 21. The first magnetic layer 11 is, for example, a reference layer. The first opposing magnetic layer 11o is a magnetization free layer (or a storage layer). The first stack S1 includes, for example, an MTJ (Magnetic Tunnel Junction).

[0097] The orientation of the magnetization 11om of the first opposing magnetic layer 11o changes according to the orientation of the first current ic1 flowing through the first conductive member 21. The change in the orientation of the magnetization 11om is considered to be based on, for example, the spin Hall effect.

[0098] The first stacked body S1 can be used as, for example, a memory cell. The first stacked body S1 can be used as, for example, a part of a calculation circuit.

[0099] like Figure 1 As shown, the first element 11E may include a first electrode 11e1. The first electrode 11e1 is electrically connected to the first magnetic layer 11. The resistance of the first stacked body S1 corresponds to the resistance between the first electrode 11e1 and the first conductive member 21, for example.

[0100] The first transistor Tn1 includes a first end Sn1, a first other end Dn1, and a first gate Gn1. The first end Sn1 is, for example, one of a source and a drain. The first other end Dn1 is, for example, the other of a source and a drain.

[0101] The second transistor Tp1 includes a second end Sp1, a second other end Dp1, and a second gate Gp1. The second end Sp1 is, for example, one of a source and a drain. The second other end Dp1 is, for example, the other of a source and a drain.

[0102] The first other end Dn1 is electrically connected to the first portion 21a. In this example, the first other end Dn1 and the first portion 21a are electrically connected via the conductive portion 75a.

[0103] The second other end Dp1 is electrically connected to the first magnetic layer 11. In this example, the first magnetic layer 11 and the second other end Dp1 are electrically connected via the first connection member CN1.

[0104] The first wiring 77A is electrically connected to the second portion 21b. In this example, the first wiring 77A and the second portion 21b are electrically connected via the conductive portion 75b. The second wiring 77B is electrically connected to the first gate Gn1 and the second gate Gn2. The third wiring 77C is electrically connected to the first end Sn1 and the second end Sp1.

[0105] For example, the first wiring 77A functions as a bit line W / R-BL for writing and reading. For example, the second wiring 77B functions as a word line W / R-WL for writing and reading. For example, the third wiring 77C functions as a source line SL.

[0106] In the magnetic device 110 involved in the embodiment, one bit line is provided for writing and reading, and one word line is provided as a word line for writing and reading. Thus, compared with the case where a bit line for writing, a bit line for reading, a word line for writing, and a word line for reading are provided, the number of wirings can be reduced. Thus, a magnetic device capable of high density can be provided.

[0107] The control unit 70 is electrically connected to the first wiring 77A, the second wiring 77B, and the third wiring 77C. The control unit 70 can perform the first write operation and the first read operation. The control unit 70 may include, for example, a word line and source line control circuit 70A and a bit line control circuit 70B. The word line and source line control circuit 70A is, for example, a column control circuit. The bit line control circuit 70B is, for example, a row control circuit. The control unit 70 involved in the following embodiments may also include a word line and source line control circuit 70A and a bit line control circuit 70B.

[0108] For example, in the first write operation, the control unit 70 sets the second wiring 77B (word line W / R-WL) to a selected state (eg, a potential corresponding to "1") and supplies current between the first portion 21a and the second portion 21b via the first transistor Tn1.

[0109] For example, in the first read operation, the control unit 70 sets the second wiring 77B (word line W / R-WL) to a non-selected state (eg, a potential corresponding to "0") and detects a value corresponding to the resistance of the first stack S1 via the second transistor Tp1.

[0110] In this way, the first transistor Tn1 is used in the write operation, and the second transistor Tp1 is used in the read operation. Thus, the wiring can be used in both of these operations.

[0111] In the write operation, the first wiring 77A (bit line W / R-BL) can also be set to a positive or negative potential (+ / -). As a result, the first current ic1 is directed from the first portion 21a to the second portion 21b or from the second portion 21b to the first portion 21a. The direction of the magnetization 11om of the first opposing magnetic layer 11o changes, and the resistance of the first stack S1 changes.

[0112] Figure 2 (a) Figure 2 (b) and Figure 3 (a)~ Figure 3 (c) is a schematic diagram illustrating the magnetic device according to the first embodiment.

[0113] Figure 2 (a) is a schematic perspective view from above. Figure 2 (b) Yes Figure 2 (a) is a cross-sectional view along the line B1-B1'. Figure 3 (a) Yes Figure 2 (a) A3-A3' line cross-section. Figure 3 (b) Yes Figure 2 (a) A2-A2' line cross-section. Figure 3 (c) Yes Figure 2 (a) is a cross-sectional view taken along line A1-A1'. In the following drawings, insulating portions are omitted as appropriate.

[0114] like Figure 2 As shown in (a), the first stacked body S1, the first conductive member 21, the first transistor Tn1, and the second transistor Tp1 are provided in a region of 4F×4F in size. “F” corresponds to, for example, the minimum processing dimension.

[0115] like Figure 3 As shown in (c), the second direction (for example, the Z-axis direction) from the third portion 21c to the first magnetic layer 11 intersects with the first direction (the X-axis direction) from the first portion 21a to the second portion 21b. Figure 3 As shown in (c), in this example, the direction from the first end Sn1 to a portion of the third wiring 77C is along the second direction (Z-axis direction). In this example, the direction from the first end Sn1 to the second portion 21b is along the second direction (Z-axis direction). Figure 3 As shown in (a), the direction from the second end Sp1 to the other part of the third wiring 77C is along the second direction (Z-axis direction). Figure 3 As shown in (c), the direction from the first other end Dn1 to the first portion 21a is along the second direction (Z-axis direction).

[0116] With such a structure, various elements included in the magnetic device 110 can be provided in a small area, thereby providing a magnetic device that can be highly densified.

[0117] like Figure 2 As shown in (a), a first connection member CN1 is provided. The first connection member CN1 electrically connects the first magnetic layer 11 and the second other end Dp1. Figure 3 As shown in (a), the direction from the second other end Dp1 to the first connection member CN1 is along the second direction (Z-axis direction). In this example, the second other end Dp1 is electrically connected to the first magnetic layer 11 of the first stack S1 through the conductive portion 75r, the first connection member CN1 and the first electrode 11el.

[0118] like Figure 3 As shown in (b), the direction from the first stacked body S1 to a part of the first wiring 77A is along the second direction (Z-axis direction). A magnetic device capable of high density can be provided.

[0119] like Figure 3 As shown in (c), the first other end Dn1 and the first portion 21a are electrically connected via the conductive portion 75a. The conductive portion 75a extends, for example, along the Z-axis direction.

[0120] Figure 4 It is a schematic perspective view illustrating the magnetic device according to the first embodiment.

[0121] like Figure 4 As shown, the magnetic device 111 involved in the embodiment includes, in addition to the first element 11E, the first transistor Tn1, the second transistor Tp1, the first wiring 77A, the second wiring 77B and the third wiring 77C, a third transistor Tn2 of the first conductive type (e.g., n-type), a fourth transistor Tp2 of the second conductive type (e.g., p-type) and a fourth wiring 77D.

[0122] The first transistor Tn1, the second transistor Tp1, the first wiring 77A, the second wiring 77B, and the third wiring 77C can be applied to the structure described with respect to the magnetic device 110. Hereinafter, the parts of the magnetic device 111 that are different from the magnetic device 110 will be described.

[0123] like Figure 4 As shown, the first element 11E includes a second stacked body S2 in addition to the first conductive member 21 and the first stacked body S1 .

[0124] The first conductive member 21 includes a fourth portion 21d and a fifth portion 21e. The fifth portion 21e is between the second portion 21b and the fourth portion 21d. The second laminate S2 includes a second magnetic layer 12 and a second opposing magnetic layer 12o disposed between the fifth portion 21e and the second magnetic layer 12. In this example, the second laminate S2 further includes a second non-magnetic layer 12n. The second non-magnetic layer 12n is disposed between the second opposing magnetic layer 12o and the second magnetic layer 12.

[0125] For example, the orientation of the magnetization 12om of the second opposing magnetic layer 12o changes according to the orientation of the first current ic1 flowing through the first conductive member 21. As a result, the angle between the orientation of the magnetization 12om and the orientation of the magnetization 12m of the second magnetic layer 12 changes. As a result, the resistance of the second stack S2 changes.

[0126] In this example, the first element 11E includes a second electrode 12e1. The second electrode 12e1 is electrically connected to the first magnetic layer 12. The resistance of the second stacked body S2 corresponds to the resistance between the second electrode 12e1 and the first conductive member 21, for example.

[0127] like Figure 4 As shown, the third transistor Tn2 includes a third terminal Sn2, a third other terminal Dn2, and a third gate Gn2. The third terminal Sn2 is, for example, one of a source and a drain. The third other terminal Dn2 is, for example, the other of a source and a drain.

[0128] The fourth transistor Tp1 includes a fourth end Sp2, a fourth other end Dp2, and a fourth gate Gp2. The fourth end Sp2 is, for example, one of a source and a drain. The fourth other end Dp2 is, for example, the other of a source and a drain.

[0129] like Figure 4 As shown in FIG. 7 , the third other end Dn2 is electrically connected to the fourth portion 21d. In this example, the third other end Dn2 and the fourth portion 21d are electrically connected via the conductive portion 75c.

[0130] The fourth other end Dp2 is electrically connected to the second magnetic layer 12. In this example, the fourth other end Dp2 and the second magnetic layer 12 are electrically connected via the second connection member CN2.

[0131] The fourth wiring 77D is electrically connected to the third gate Gn2 and the fourth gate Gp2. The third wiring 77C is electrically connected to the third end Sn2 and the fourth end Sp2.

[0132] For example, the first wiring 77A functions as a bit line W / R-BL for writing and reading with respect to the first stack S1 and the second stack S2. For example, the second wiring 77B functions as a word line W / R-WL for writing and reading with respect to the first stack S1. The fourth wiring 77D functions as a word line W / R-WL for writing and reading with respect to the second stack S2. For example, the third wiring 77C functions as a source line SL.

[0133] In the magnetic device 111, both the wiring for writing and the wiring for reading are used. Thus, a magnetic device capable of being densified can be provided.

[0134] The control unit 70 is electrically connected to the first wiring 77A, the second wiring 77B, the third wiring 77C, and the fourth wiring 77D.

[0135] For example, the control unit 70 can perform a first write operation, a second write operation, a first read operation, and a second read operation.

[0136] In the first write operation, the control unit 70 selects the second wiring 77B (the word line W / R-WL for writing and reading) and supplies a current between the first portion 21a and the second portion 21b via the first transistor Tn1. In the second write operation, the control unit 70 selects the fourth wiring 77D (the word line W / R-WL for writing and reading) and supplies a current between the fourth portion 21d and the second portion 21b via the third transistor Tn2.

[0137] In the first read operation, the control unit 70 makes the second wiring 77B (word line W / R-WL for writing and reading) a non-selected state, and detects a value corresponding to the resistance of the first stacked body S1 via the second transistor Tp1. In the second read operation, the control unit 70 makes the fourth wiring 77D a non-selected state, and detects a value corresponding to the resistance of the second stacked body S2 via the fourth transistor Tp2.

[0138] The control unit 70 may also perform the following first write operation, second write operation, and read operation. In the first write operation, the control unit 70 selects the second wiring 77B and supplies current between the first portion 21a and the second portion 21b via the first transistor Tn1. In the second write operation, the control unit 70 selects the fourth wiring 77D and supplies current between the fourth portion 21d and the second portion 21b via the third transistor Tn2. In the read operation, the control unit 70 deselects the second wiring 77B and the fourth wiring 77D and detects a value corresponding to the potential of the second portion 21b via the second transistor Tp1 and the fourth transistor Tp2.

[0139] Figure 5 (a), Figure 5 (b) and Figure 6 are schematic views of a magnetic device according to the first embodiment.

[0140] Figure 5 (a) is a schematic transmission top view. Figure 5 (b) is Figure 5 a sectional view taken along line A1 - A1' of (a). Figure 6 is Figure 5 a sectional view taken along line B1 - B1' of (a).

[0141] As Figure 5 shown in (a), the first laminate S1, the second laminate S2, the first conductive member 21, the first transistor Tn1, the second transistor Tp1, the third transistor Tn2, and the fourth transistor Tp2 are provided in a region having a size of 6F×4F.

[0142] As Figure 5 shown in (b), the second direction from the third portion 21c to the first magnetic layer 11 intersects the first direction (X - axis direction) from the first portion 21a to the second portion 21b. The second direction is, for example, the Z - axis direction. The direction from the fifth portion 21e to the second magnetic layer 12 is along the second direction.

[0143] As Figure 5 shown in (a), the direction from the second end Sp1 to a part of the third wiring 77C is along the second direction (Z - axis direction).

[0144] As Figure 5 shown in (a), the position of the second wiring 77B in the first direction (X - axis direction) is between the position of the first portion 21a in the first direction and the position of the fourth portion 21d in the first direction. The position of the fourth wiring 77D in the first direction is between the position of the second wiring 77B in the first direction and the position of the fourth portion 21d in the first direction. The position of the third wiring 77C in the first direction is between the position of the second wiring 77B in the first direction and the position of the fourth wiring 77D in the first direction.

[0145] As Figure 5 shown in (b), the direction from the first other end Dn1 to the first portion 21a is along the second direction (Z - axis direction). The direction from the first end Sn1 to a part of the third wiring 77C is along the second direction (Z - axis direction). The direction from the third other end Dn2 to the fourth portion 21d is along the second direction (Z - axis direction).

[0146] As Figure 5 shown in (b), the first connection member CN1 and the second connection member CN2 are provided. As Figure 4As shown, the first connection component CN1 is electrically connected to the first magnetic layer 11 and the other end Dp1 of the second. As Figure 4 As shown, the second connection component CN2 is electrically connected to the second magnetic layer 12 and the other end Dp2 of the fourth.

[0147] As Figure 5 (a) and Figure 5 (b) As shown, the direction from the second wiring 77B to the first connection component CN1 is along the second direction (Z-axis direction). As Figure 5 (a) and Figure 5 (b) As shown, the direction from the fourth wiring 77D to the second connection component CN2 is along the second direction (Z-axis direction).

[0148] As Figure 6 As shown, the position of the fourth wiring 77D in the Z-axis direction is between the position of the third gate Gn2 in the Z-axis direction and the position of the first conductive component 21 in the Z-axis direction. As Figure 6 As shown, the position of the fourth wiring 77D in the Z-axis direction is between the position of the third gate Gn2 in the Z-axis direction and the position of the first wiring 77A in the Z-axis direction. A magnetic device capable of high density can be provided.

[0149] Figure 7 And Figure 8 are schematic diagrams illustrating the magnetic device according to the first embodiment.

[0150] Figure 7 is a perspective view. Figure 8 is a schematic transmission top view.

[0151] As Figure 7 As shown, the magnetic device 112 according to the embodiment includes a fifth wiring 77E. The other structures in the magnetic device 112 are the same as those of the magnetic device 111, for example. Hereinafter, an example of the fifth wiring 77E will be described.

[0152] As Figure 7 As shown, the fifth wiring 77E is electrically connected to at least any one of the first part 21a and the fourth part 21d. For example, through the fifth wiring 77E, the first part 21a is connected to the control unit 70. For example, through the fifth wiring 77E, the fourth part 21d is connected to the control unit 70.

[0153] The fifth wiring 77E connected to the first part 21a functions as a read bit line R-BL for the first stack S1, for example. The fifth wiring 77E connected to the fourth part 21d functions as a read bit line R-BL for the second stack S2, for example.

[0154] Even in the magnetic device 112, in a writing operation, a shared wiring is used. A magnetic device capable of high density can be provided.

[0155] As Figure 7 and Figure 8 shown, the magnetic device 112 may further include a third connection component CN3 and a fourth connection component CN4. The third connection component CN3 electrically connects the fifth wiring 77E and the first portion 21a. The fourth connection component CN4 electrically connects the fifth wiring 77E and the fourth portion 21d.

[0156] As Figure 8 shown, the third connection component CN3 overlaps with the first other end Dn1 in the second direction (Z-axis direction). The fourth connection component CN4 overlaps with the third other end Dn2 in the second direction. A magnetic device capable of high density can be provided.

[0157] In the magnetic device according to the first embodiment, a first conductive portion 25e and a second conductive portion 26e described later may be provided. In the first embodiment, the transistor may be a fin-type transistor (e.g., fin-type FET) described later.

[0158] (Second Embodiment)

[0159] Fig. 9 is a schematic perspective view illustrating a magnetic device according to the second embodiment.

[0160] As Fig. 9 shown, the magnetic device 120 according to the embodiment includes a first element 11E, a first conductive portion 25e, and a second conductive portion 26e. As Fig. 9 shown, the magnetic device 120 may further include a first transistor Tr1, a second transistor Tr2, a control unit 70, and the like.

[0161] As Fig. 9 shown, the first element 11E includes a first conductive member 21 and a first laminate S1. The first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. The third portion 21c is between the first portion 21a and the second portion 21b.

[0162] The first laminate S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o. The first opposed magnetic layer 11o is provided between the third portion 21c and the first magnetic layer 11. The first laminate S1 may further include a first non-magnetic layer 11n.

[0163] The first conductive portion 25e is electrically connected to the first portion 21a. The second conductive portion 26e is electrically connected to the second portion 21b. The direction from the first conductive portion 25e to the second conductive portion 26e is along the first direction. The first direction corresponds to the X-axis direction.

[0164] The first part 21a is between a part 25p of the first conductive part 25e and a part 26p of the second conductive part 26e in the first direction (X-axis direction). The second part 21b is between the first part 21a and a part 26p of the second conductive part 26e in the first direction (X-axis direction).

[0165] For example, the first part 21a includes a first side surface sf1. The first side surface sf1 intersects the first direction (X-axis direction). The second part 21b includes a second side surface sf2. The second side surface sf2 intersects the first direction (X-axis direction).

[0166] The above-mentioned part 25p of the first conductive part 25e is opposed to the first side surface sf1. The above-mentioned part 26p of the second conductive part 26e is opposed to the second side surface sf2. For example, the part 25p is in contact with the first side surface sf1. The part 26p is in contact with the second side surface sf2.

[0167] In the magnetic device 120, the first conductive part 25e and the second conductive part 26e are connected to the side surface of the first conductive member 21. Thereby, the area of the connection part can be narrowed. Stable connection can be achieved. According to the magnetic device 120, a magnetic device capable of high density can be provided.

[0168] As Fig. 9 shown, the magnetic device 120 may also include a first insulating part 25i and a second insulating part 26i. The first insulating part 25i is between the first laminate S1 and the first conductive part 25e. The second insulating part 26i is between the first laminate S1 and the second conductive part 26e. Stable electrical insulation can be obtained.

[0169] For example, a structure of the first conductive member 21 and the laminate S1 is formed. The structure includes a laminated film that becomes the laminate S1. By etching the laminated film, the first laminate S1 can be obtained. After forming an insulating part on the side wall of the first laminate S1, the film that becomes the first conductive member 21 is further etched. Thereby, the side surface of the first conductive member 21 is formed. By forming a conductive film in contact with the side surface, the first conductive part 25e and the second conductive part 26e can be obtained.

[0170] In the embodiment, at least one of the first conductive part 25e and the second conductive part 26e may be electrically connected to a transistor. In this example, the first conductive part 25e is electrically connected to the first transistor Tr1, and the second conductive part 26e is electrically connected to the second transistor Tr2.

[0171] Fig.10 (a) and Fig.10 (b) are schematic views illustrating the magnetic device according to the second embodiment.

[0172] Fig.10 (a) is a schematic transmission top view. Fig.10 (b) is a sectional view.

[0173] As Fig.10 shown in (a) and Fig.10 shown in (b), a first conductive member 21 is provided between an insulating portion 27i and an insulating portion 27j. A first conductive portion 25e is provided between the insulating portion 27i and the first conductive member 21. A second conductive portion 26e is provided between the first conductive member 21 and the insulating portion 27j.

[0174] As Fig.10 shown in (b), for example, a first conductive member 21 is provided between an insulating portion 27k and a laminate S1.

[0175] As Fig.10 shown in (b), the second transistor Tr2 includes a second source Sr2, a second drain Dr2, and a second gate Gr2. In this example, the second drain Dr2 and the second conductive portion 26e are electrically connected through a conductive portion 75d. The second source Sr2 is electrically connected to a third wiring 77C (source line SL). In this example, the direction from the second gate Gr2 to the first laminate S1 is along the Z-axis direction.

[0176] As Fig.10 shown in (b), the first conductive portion 25e is electrically connected to a write bit line W-BL. The first magnetic layer 11 is electrically connected to a read bit line R-BL.

[0177] As Fig.10 shown in (b), the lower end 25L of the first conductive portion 25e and the lower end 26L of the second conductive portion 26e are located below the first conductive member 21. Transistors (such as the first transistor Tr1 and the second transistor Tr2, etc.) are located below the lower end 25L and the lower end 26L.

[0178] Fig.11 (a) and Fig.11 (b) are schematic sectional views illustrating a magnetic device according to the second embodiment.

[0179] In Fig.11 the magnetic device 121 shown in (a), the position of the second gate Gr2 in the X-axis direction is offset from the position of the first laminate S1 in the X-axis direction.

[0180] In Fig.11 the magnetic device 122 shown in (b), the length of the laminate S1 in the X-axis direction is longer than the length of the laminate S1 in the magnetic device 121 in the X-axis direction.

[0181] In the magnetic devices 120 to 122 according to the second embodiment, a first conductive member 21 is provided between the first conductive portion 25e and the second conductive portion 26e. Even when there are deviations in processing conditions or the like, a stable electrical connection can be obtained.

[0182] Fig.12 It is a schematic cross-sectional view illustrating a magnetic device according to the second embodiment.

[0183] As Fig.12 shown, in the magnetic device 123, a plurality of first elements 11E are provided. In each of the plurality of first elements 11E, the structure described with respect to Fig. 9 is applied.

[0184] Fig.13 It is a schematic perspective view illustrating a magnetic device according to the second embodiment.

[0185] As Fig.13 shown, in the magnetic device 124, as the first transistor Tr1, a first transistor Tn1 of the first conductivity type is provided, and as the second transistor Tr2, a second transistor Tp1 of the second conductivity type is provided. Thus, as described with respect to the first embodiment, wiring can be omitted. A magnetic device that can be made more dense can be provided.

[0186] (Third Embodiment)

[0187] Fig.14 (a) and Fig.14 (b) are schematic views illustrating a magnetic device according to the third embodiment.

[0188] Fig.14 (a) is a perspective view. Fig.14 (b) is a schematic transmission top view.

[0189] As Fig.14 (a) shown, the magnetic device 130 according to the embodiment includes a first element 11E and a first transistor Tr1. As Fig.14 (a) shown, the magnetic device 130 may also include a control unit 70.

[0190] As Fig.14 (a) shown, the first element 11E includes a first conductive member 21 and a first laminate S1. The first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. The third portion 21c is between the first portion 21a and the second portion 21b. The first laminate S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o. The first opposed magnetic layer 11o is provided between the third portion 21c and the first magnetic layer 11. In this example, the first laminate S1 includes a first non-magnetic layer 11n.

[0191] The first transistor Tr1 is a fin-type transistor. For example, the first transistor Tr1 is a fin-type FET (field effect transistor).

[0192] As Fig.14 As shown in (a), the direction from the first portion 21a to the second portion 21b is along the first direction. The first direction corresponds to the X-axis direction. The second direction from the third portion 21c to the first magnetic layer 11 intersects the first direction. The second direction is, for example, the Z-axis direction.

[0193] The first transistor Tr1 includes a first semiconductor component 35. The first semiconductor component 35 extends along the first direction (X-axis direction).

[0194] In this example, as Fig.14 shown in (a), the direction from at least a part of the first semiconductor component 35 to at least a part of the first conductive component 21 is along the second direction (Z-axis direction). For example, the first conductive component 21 overlaps the first semiconductor component 35 in the Z-axis direction.

[0195] The first semiconductor component 35 is electrically connected to the first conductive component 21, for example. In this example, a first connection portion 31 and a second connection portion 32 are provided. Through the second connection portion 32, the first semiconductor component 35 is electrically connected to the first conductive component 21 (the second portion 21b in this example).

[0196] In one example, the first transistor Tr1 controls the current supply to the first conductive component 21. In one example, the first transistor Tr1 is used to control the measurement (read operation) of the resistance of the first laminate S1.

[0197] Since the first transistor Tr1 has a fin structure, the above operations can be controlled more stably with a small area. In the third embodiment, a magnetic device capable of high density can also be provided.

[0198] As Fig.14 shown in (a), the first transistor Tr1 includes a first source Sr1, a first drain Dr1, and a first gate Gr1. In this example, the first drain Dr1 is electrically connected to the second portion 21b of the first conductive component 21 via the second connection portion 32. The first source Sr1 is electrically connected to the source line SL.

[0199] The first gate Gr1 extends along the Y-axis direction. In this example, the first gate Gr1 faces two side surfaces of the first semiconductor component 35. The first gate Gr1 faces the upper surface of the first semiconductor component 35. The first gate Gr1 becomes a word line WL, for example. Or the first gate Gr1 is electrically connected to the word line WL, for example.

[0200] The first part 21a of the first conductive member 21 is connected to the write bit line W-BL. The first magnetic layer 11 is electrically connected to the read bit line R-BL. The above wiring is electrically connected to the control unit 70. Through the control unit 70, a write operation and a read operation are performed.

[0201] Fig.15 (a) to Fig.15 (e) are schematic transmission top views illustrating the magnetic device according to the third embodiment.

[0202] In Fig.15 (a) to Fig.15 In the magnetic devices 130a to 130e shown in (e), a plurality of first semiconductor members 35 are provided. In these magnetic devices, the position of the center of the first conductive member 21 in the Y-axis direction is substantially the same as the position of the center of the first semiconductor member 35 in the Y-axis direction. Based on the positions of the plurality of first semiconductor members 35, the first conductive member 21 is provided at a symmetric position.

[0203] In the magnetic device 130d, the planar shape of the first conductive member 21 is a flat circular shape, and the planar shape of the first laminate S1 is a flat circular shape. In the magnetic device 130e, the planar shape of the first conductive member 21 is a rectangular shape with rounded corners, and the planar shape of the first laminate S1 is a flat circular shape.

[0204] Fig.16 (a) to Fig.16 (f) are schematic transmission top views illustrating the magnetic device according to the third embodiment.

[0205] In Fig.16 (a) to Fig.16 In the magnetic devices 131a to 131f shown in (f), the position of the first semiconductor member 35 in the Y-axis direction (the third direction intersecting the plane including the first direction and the second direction) is offset from the position of the center of the first conductive member 21 in the Y-axis direction (the third direction). Based on the positions of the plurality of first semiconductor members 35, the first conductive member 21 is provided at an asymmetric position.

[0206] For example, the temperature of the first semiconductor member 35 sometimes rises during the operation of the transistor. For example, due to the temperature rise, the temperature of the first conductive member 21 and the like rises. When the first conductive member 21 is provided at an asymmetric position, the temperature rise in the first conductive member 21 becomes uneven within the first conductive member 21. As a result, the magnetization 11om of the first opposed magnetic layer 11o is stable and easy to determine. A stable operation can be easily obtained.

[0207] For example, spin characteristics such as spin diffusion length in the first conductive member 21 decrease as the temperature rises. By disposing the first conductive member 21 in a non-uniform (e.g., asymmetric) region, the recording current density acting on the first opposing magnetic layer 11o thereon can be made non-uniform. As a result, the inverted portion of the magnetization 11om of the first opposing magnetic layer 11o is easily defined. For example, the inverted current distribution can be narrowed. Thus, for example, stable operation can be easily obtained. For example, a high yield can be obtained.

[0208] For example, sometimes as the temperature of the first semiconductor member 35 rises, non-uniform stress is introduced into the first conductive member 21. As a result, a region where the inverted current density locally decreases may be formed in the first conductive member 21. Thus, the magnetization 11om is stable and easily inverted. Stable operation can be easily obtained.

[0209] In the magnetic device 131e, the planar shape of the first conductive member 21 is a flat circular shape, and the planar shape of the first laminate S1 is a flat circular shape. In the magnetic device 131f, the planar shape of the first conductive member 21 is a rectangular shape with rounded corners, and the planar shape of the first laminate S1 is a flat circular shape.

[0210] Fig.17 (a) to Fig.17 (c) are schematic transmission top views illustrating the magnetic device according to the third embodiment.

[0211] In Fig.17 (a) to Fig.17 (c) of the magnetic devices 132a to 132c, the first semiconductor member 35 extends in the third direction (e.g., Y-axis direction). The third direction intersects the plane intersecting the first direction and the second direction. In this example, the direction from a part of the first semiconductor member 35 to a part of the first conductive member 21 is along the second direction (Z-axis direction). For example, a part of the first conductive member 21 overlaps the first semiconductor member 35 in the Z-axis direction.

[0212] In the magnetic devices 132a to 132c, the position of the first semiconductor member 35 in the X-axis direction is offset from the position of the center of the first conductive member 21 in the X-axis direction. For example, the first conductive member 21 is disposed at an asymmetric position based on the positions of a plurality of first semiconductor members 35.

[0213] In the examples of the magnetic devices 130, 130a to 130e, 131a to 131f, and 132a to 132c, for example, the first semiconductor member 35 is electrically connected to the first conductive member 21. In the examples of the magnetic devices 130c and 131d, in addition to the first laminate S1, a second laminate S2 is provided.

[0214] Fig.18 It is a schematic perspective view illustrating a magnetic device according to the third embodiment.

[0215] As Fig.18 shown, in the magnetic device 133, a write bit line W-BL, a read bit line R-BL, a write word line W-WL, and a read word line R-WL are provided.

[0216] The write drain Drw of the first transistor Tr1 is electrically connected to the write bit line W-BL via the second connection portion 32. The read drain Drr is electrically connected to the read bit line R-BL via the first connection portion 31. The write bit line W-BL and the first conductive member 21 are electrically connected by the conductive portion 75e. The read bit line R-BL and the first conductive member 21 are electrically connected by the conductive portion 75f.

[0217] Fig.19 It is a schematic perspective view illustrating a magnetic device according to the third embodiment.

[0218] As Fig.19 shown, in the magnetic device 134, a first element 11E, a first transistor Tn1, a second transistor Tp1, a first wiring 77A, a second wiring 77B, and a third wiring 77C are provided. The first transistor Tn1 and the second transistor Tp1 are fin-type transistors. Thus, in the magnetic device according to the first embodiment, at least any one of the first transistor Tn1 and the second transistor Tp1 may also include a fin-type transistor.

[0219] For example, the first transistor Tn1 includes a second semiconductor member 36. The second transistor Tp1 includes a first semiconductor member 35.

[0220] In the magnetic device 134, a first conductive portion 25e and a second conductive portion 26e are provided. The first conductive portion 25e is electrically connected to the first portion 21a of the first conductive member 21. The second conductive portion 26e is electrically connected to the second portion 21b of the first conductive member 21. The first portion 21a is between a part of the first conductive portion 25e and a part 26p of the second conductive portion 26e in the first direction (X-axis direction). The second portion 21b is between the first portion 21a and a part 26p of the second conductive portion 26e in the first direction.

[0221] Thus, at least two of the first to third embodiments may be combined.

[0222] Hereinafter, an example of the structure of elements included in the magnetic device according to the embodiment will be described.

[0223] The first conductive member 21 includes, for example, at least one selected from the group consisting of Ta, W, Re, Os, Ir, Pt, Au, Cu, Ag, and Pd. The thickness of the first conductive member 21 is, for example, 3 nm or more and 10 nm or less (for example, 5 nm).

[0224] At least any one of the first magnetic layer 11 and the second magnetic layer 12 includes, for example, at least one selected from the group consisting of Fe and Co. These magnetic layers may also include a laminated film. The laminated film has, for example, a structure of CoFe film (thickness: 2 nm) / Ru film (thickness: 0.8 nm) / Co film / CoFeB film (thickness: 2 nm).

[0225] At least any one of the first opposed magnetic layer 11o and the second opposed magnetic layer 12o includes, for example, at least one selected from the group consisting of Fe and Co and boron. The thickness of these magnetic layers is, for example, 1 nm or more and 2 nm or less (for example, 1.6 nm).

[0226] At least any one of the first non-magnetic layer 11n and the second non-magnetic layer 12n includes, for example, Mg and oxygen. The thickness of these non-magnetic layers is, for example, 1 nm or more and 2 nm or less (for example, 1.4 nm).

[0227] The descriptions regarding the above materials and thicknesses are examples, and the structure of the elements included in the magnetic device can be changed.

[0228] The embodiment includes, for example, the following structures (for example, technical solutions).

[0229] (Structure 1)

[0230] A magnetic device includes:

[0231] A first element including a first conductive member and a first laminate, and the first conductive member includes a first part, a second part, and a third part between the first part and the second part, and the first laminate includes a first magnetic layer and a first opposed magnetic layer provided between the third part and the first magnetic layer;

[0232] A first transistor including a first terminal, a first other terminal, and a first gate;

[0233] A second transistor including a second terminal, a second other terminal, and a second gate;

[0234] A first wiring;

[0235] A second wiring; and

[0236] A third wiring,

[0237] The first other terminal is electrically connected to the first part,

[0238] The second other end is electrically connected to the first magnetic layer.

[0239] The first wiring is electrically connected to the second part.

[0240] The second wiring is electrically connected to the first gate and the second gate.

[0241] The third wiring is electrically connected to the first end and the second end.

[0242] (Structure Two)

[0243] For the magnetic device according to Structure One, wherein

[0244] It further includes a control unit.

[0245] The control unit is electrically connected to the first wiring, the second wiring, and the third wiring.

[0246] The control unit can perform a first write operation and a first read operation.

[0247] In the first write operation, the control unit makes the second wiring in a selected state and supplies current between the first part and the second part via the first transistor.

[0248] In the first read operation, the control unit makes the second wiring in a non - selected state and detects a value corresponding to the resistance of the first stack via the second transistor.

[0249] (Structure Three)

[0250] For the magnetic device according to Structure One or Two, wherein

[0251] The second direction from the third part to the first magnetic layer intersects the first direction from the first part to the second part.

[0252] The direction from the first end to a part of the third wiring is along the second direction.

[0253] The direction from the first end to a part of the second part is along the second direction.

[0254] The direction from the second end to another part of the third wiring is along the second direction.

[0255] The direction from the second other end to the first part is along the second direction.

[0256] (Structure Four)

[0257] For the magnetic device according to Structure Three, wherein

[0258] It also includes a first connection component electrically connecting the first magnetic layer and the other end of the second

[0259] From the second end towards a part of the first connection component along the second direction.

[0260] (Structure Five)

[0261] The magnetic device according to any one of Structures Two to Four, wherein

[0262] From the first laminate towards the first wiring along the second direction.

[0263] (Structure Six)

[0264] The magnetic device according to Structure One, further comprising:

[0265] A third transistor, including a third end, another end of the third, and a third gate;

[0266] A fourth transistor, including a fourth end, another end of the fourth, and a fourth gate; and

[0267] A fourth wiring

[0268] The first element further includes a second laminate

[0269] The first conductive component includes a fourth part and a fifth part, and the fifth part is between the second part and the fourth part

[0270] The second laminate includes a second magnetic layer and a second opposing magnetic layer disposed between the fifth part and the second magnetic layer

[0271] The other end of the third is electrically connected to the fourth part

[0272] The other end of the fourth is electrically connected to the second magnetic layer

[0273] The fourth wiring is electrically connected to the third gate and the fourth gate

[0274] The third wiring is electrically connected to the third end and the fourth end.

[0275] (Structure Seven)

[0276] The magnetic device according to Structure Six, wherein

[0277] It further includes a control unit

[0278] The control unit is electrically connected to the first wiring, the second wiring, the third wiring, and the fourth wiring

[0279] The control unit can perform a first writing operation, a second writing operation, a first reading operation, and a second reading operation.

[0280] In the first writing operation, the control unit makes the second wiring in a selected state and supplies current between the first part and the second part via the first transistor.

[0281] In the second writing operation, the control unit makes the fourth wiring in a selected state and supplies current between the fourth part and the second part via the third transistor.

[0282] In the first reading operation, the control unit makes the second wiring in a non - selected state and detects a value corresponding to the resistance of the first laminate via the second transistor.

[0283] In the second reading operation, the control unit makes the fourth wiring in a non - selected state and detects a value corresponding to the resistance of the second laminate via the fourth transistor.

[0284] (Structure Eight)

[0285] For the magnetic device according to Structure Six, wherein,

[0286] It further includes a control unit.

[0287] The control unit is electrically connected to the first wiring, the second wiring, the third wiring, and the fourth wiring.

[0288] The control unit can perform a first writing operation, a second writing operation, and a reading operation.

[0289] In the first writing operation, the control unit makes the second wiring in a selected state and supplies current between the first part and the second part via the first transistor.

[0290] In the second writing operation, the control unit makes the fourth wiring in a selected state and supplies current between the fourth part and the second part via the third transistor.

[0291] In the reading operation, the control unit makes the second wiring and the fourth wiring in non - selected states and detects a value corresponding to the potential of the second part via the second transistor and the fourth transistor.

[0292] (Structure Nine)

[0293] For the magnetic device according to any one of Structures Six to Eight, wherein,

[0294] The second direction from the third part to the first magnetic layer intersects the first direction from the first part to the second part.

[0295] The direction from the fifth part to the second magnetic layer is along the second direction.

[0296] The direction from the other end of the second part to a part of the third wiring is along the second direction.

[0297] The position of the second wiring in the first direction is between the position of the first part in the first direction and the position of the fourth part in the first direction.

[0298] The position of the fourth wiring in the first direction is between the position of the second wiring in the first direction and the position of the fourth part in the first direction.

[0299] The position of the third wiring in the first direction is between the position of the second wiring in the first direction and the position of the fourth wiring in the first direction.

[0300] (Structure Ten)

[0301] The magnetic device according to any one of Structures Six to Nine, wherein

[0302] The direction from the other end of the first part to the first part is along the second direction.

[0303] The direction from the first end to a part of the third wiring is along the second direction.

[0304] The direction from the other end of the third part to the fourth part is along the second direction.

[0305] (Structure Eleven)

[0306] The magnetic device according to Structure Ten, further comprising:

[0307] A first connection component electrically connecting the first magnetic layer and the other end of the second; and

[0308] A second connection component electrically connecting the second magnetic layer and the other end of the fourth,

[0309] The direction from the second wiring to the first connection component is along the second direction.

[0310] The direction from the fourth wiring to the second connection component is along the second direction.

[0311] (Structure Twelve)

[0312] The magnetic device according to Structure Six, wherein,

[0313] It further includes a fifth wiring,

[0314] The fifth wiring is electrically connected to at least any one of the first part and the fourth part.

[0315] (Structure Thirteen)

[0316] The magnetic device according to Structure Twelve, wherein,

[0317] It further includes a third connection component and a fourth connection component,

[0318] The third connection component electrically connects the fifth wiring and the first part,

[0319] The fourth connection component electrically connects the fifth wiring and the fourth part,

[0320] The third connection component overlaps with the other end of the first in the second direction,

[0321] The fourth connection component overlaps with the other end of the third in the second direction.

[0322] (Structure Fourteen)

[0323] The magnetic device according to any one of Structures One to Thirteen, wherein it further includes:

[0324] A first conductive part, electrically connected to the first part; and

[0325] A second conductive part, electrically connected to the second part,

[0326] The direction from the first conductive part to the second conductive part is along the first direction,

[0327] The first part is between a part of the first conductive part and a part of the second conductive part in the first direction,

[0328] The second part is between the first part and the part of the second conductive part in the first direction.

[0329] (Structure Fifteen)

[0330] The magnetic device according to any one of Structures One to Fourteen, wherein,

[0331] At least any one of the first transistor and the second transistor includes a fin-type transistor.

[0332] (Structure Sixteen)

[0333] A magnetic device, comprising:

[0334] The first element includes a first conductive member and a first laminate, and the first conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third portion and the first magnetic layer;

[0335] A first conductive portion is electrically connected to the first portion;

[0336] A second conductive portion is electrically connected to the second portion; and

[0337] A transistor

[0338] The direction from the first conductive portion to the second conductive portion is along a first direction,

[0339] The first portion is between a part of the first conductive portion and a part of the second conductive portion in the first direction,

[0340] The second portion is between the first portion and the part of the second conductive portion in the first direction,

[0341] At least one of the first conductive portion and the second conductive portion is electrically connected to the transistor.

[0342] (Structure Seventeen)

[0343] The magnetic device according to Structure Sixteen, wherein

[0344] The first portion includes a first side surface intersecting the first direction,

[0345] The second portion includes a second side surface intersecting the first direction,

[0346] The part of the first conductive portion faces the first side surface,

[0347] The part of the second conductive portion faces the second side surface.

[0348] (Structure Eighteen)

[0349] The magnetic device according to Structure Sixteen, further comprising:

[0350] A first insulating portion; and

[0351] A second insulating portion,

[0352] The first insulating portion is between the first laminate and the first conductive portion,

[0353] The second insulating portion is between the first laminate and the second conductive portion.

[0354] (Structure Nineteen)

[0355] A magnetic device includes:

[0356] A first element including a first conductive member and a first laminate, and the first conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion, and the first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third portion and the first magnetic layer; and

[0357] A fin-type first transistor,

[0358] The direction from the first portion to the second portion is along a first direction,

[0359] A second direction from the third portion to the first magnetic layer intersects the first direction,

[0360] The first transistor includes a first semiconductor member,

[0361] The direction from at least a part of the first semiconductor member to at least a part of the first conductive member is along the second direction.

[0362] (Structure Twenty)

[0363] The magnetic device according to Structure Nineteen, wherein

[0364] The first semiconductor member extends along the first direction,

[0365] The position of the first semiconductor member in a third direction intersecting a plane including the first direction and the second direction is offset from the position of the center of the first conductive member in the third direction.

[0366] (Structure Twenty-One)

[0367] The magnetic device according to Structure Nineteen, wherein

[0368] The first semiconductor member extends along a third direction intersecting a plane including the first direction and the second direction,

[0369] The position of the first semiconductor member in the first direction is offset from the position of the center of the first conductive member in the first direction.

[0370] (Structure Twenty-Two)

[0371] The magnetic device according to Structure Nineteen, wherein

[0372] The first semiconductor component extends in a third direction,

[0373] and the third direction intersects a plane that intersects the first direction and the second direction.

[0374] (Fourth Embodiment)

[0375] Fig. 20 FIG. is a schematic perspective view illustrating a magnetic device according to the fourth embodiment.

[0376] Figure 21 to Figure 24 FIG. is a schematic top view illustrating a magnetic device according to the fourth embodiment.

[0377] Figure 21 to Figure 24 corresponds to the top view of each layer of the magnetic device.

[0378] As Fig. 20 shown, the magnetic device 140 according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, a third transistor Tr3, a fourth transistor Tr4, a fifth transistor Tr5, a sixth transistor Tr6, a first wiring 77A, a second wiring 77B, a third wiring 77C, a fourth wiring 77D, and a fifth wiring 77E.

[0379] As Fig. 20 and Fig.21 shown, the first transistor Tr1 includes a first terminal Ts1, a first other terminal Td1, and a first gate Tg1, and is of a first conductivity type. The second transistor Tr2 includes a second terminal Ts2, a second other terminal Td2, and a second gate Tg2, and is of a second conductivity type. The third transistor Tr3 includes a third terminal Ts3, a third other terminal Td3, and a third gate Tg3, and is of a first conductivity type. The fourth transistor Tr4 includes a fourth terminal Ts4, a fourth other terminal Td4, and a fourth gate Tg4, and is of a second conductivity type. The fifth transistor Tr5 includes a fifth terminal Ts5, a fifth other terminal Td5, and a fifth gate Tg5, and is of a first conductivity type. The sixth transistor Tr6 includes a sixth terminal Ts6, a sixth other terminal Td6, and a sixth gate Tg6, and is of a first conductivity type. Hereinafter, the first conductivity type is n-type and the second conductivity type is p-type.

[0380] At least a part of the first terminal Ts1 may overlap at least a part of the third terminal Ts3. At least a part of the second terminal Ts2 may overlap at least a part of the fourth terminal Ts4. At least a part of the fifth terminal Ts5 may overlap at least a part of the sixth terminal Ts6. The first terminal Ts1 may be substantially the same as the third terminal Ts3. The second terminal Ts2 may be substantially the same as the fourth terminal Ts4. The fifth terminal Ts5 may be substantially the same as the sixth terminal Ts6.

[0381] As Fig. 20 shown, each of the first element 11E and the second element 12E includes a first conductive member 21, a first laminate S1, and a second laminate S2.

[0382] The first conductive member 21 includes a first portion 21a, a second portion 21b, a third portion 21c, a fourth portion 21d, and a fifth portion 21e. The second portion 21b is between the first portion 21a and the fourth portion 21d. The third portion 21c is between the first portion 21a and the second portion 21b. The fifth portion 21e is between the second portion 21b and the fourth portion 21d.

[0383] The first laminate S1 includes a first magnetic layer 11 and a first opposing magnetic layer 11o provided between the third portion 21c and the first magnetic layer 11. A first non-magnetic layer 11n may also be provided between the first opposing magnetic layer 11o and the first magnetic layer 11.

[0384] The second laminate S2 includes a second magnetic layer 12 and a second opposing magnetic layer 12o provided between the fifth portion 21e and the second magnetic layer 12. A second non-magnetic layer 12n may also be provided between the second opposing magnetic layer 12o and the second magnetic layer 12.

[0385] As Fig. 20 shown, a first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. In this example, this connection is made through a conductive portion 75a.

[0386] A second other end Td2 is electrically connected to the first magnetic layer 11 of the first element 11E and the first magnetic layer 11 of the second element 12E. In this example, this connection is made through a first connection member CN1.

[0387] A third other end Td3 is electrically connected to the fourth portion 21d of the first conductive member 21 of the first element 11E. In this example, this connection is made through a conductive portion 75c.

[0388] A fourth other end Td4 is electrically connected to the second magnetic layer 12 of the first element 11E and the second magnetic layer 12 of the second element 12E. In this example, this connection is made through a second connection member CN2.

[0389] A fifth other end Td5 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E. In this example, this connection is made through a conductive portion 75d.

[0390] The sixth other end Td6 is electrically connected to the fourth part 21d of the first conductive member 21 of the second element 12E. In this example, this connection is made through the conductive portion 75e.

[0391] The first wiring 77A is electrically connected to the second part 21b of the first conductive member 21 of the first element 11E. In this example, this connection is made through the conductive portion 75b. The first wiring 77A is, for example, the bit line W / R-BL1 for writing and reading.

[0392] The second wiring 77B is electrically connected to the first gate Tg1, the second gate Tg2, and the fifth gate Tg5. The second wiring 77B is, for example, the word line W / R-WL1 for writing and reading.

[0393] The third wiring 77C is electrically connected to the first terminal Ts1, the second terminal Ts2, the third terminal Ts3, the fourth terminal Ts4, the fifth terminal Ts5, and the sixth terminal Ts6. The third wiring 77C is, for example, the source line SL. In the embodiment, for each polarity of the transistor, the first terminal Ts1, the third terminal Ts3, the fifth terminal Ts5, and the sixth terminal Ts6 may be electrically connected, and the second terminal Ts2 and the fourth terminal Ts4 may be electrically connected.

[0394] The fourth wiring 77D is electrically connected to the third gate Tg3, the fourth gate Tg4, and the sixth gate Tg6. The fourth wiring 77D is, for example, the word line W / R-WL2 for writing and reading.

[0395] The fifth wiring 77E is electrically connected to the second part 21b of the first conductive member 21 of the second element 11E. In this example, this connection is made through the conductive portion 75f. The fifth wiring 77E is, for example, the bit line W / R-BL1 for writing and reading.

[0396] For example, the control unit 70 is electrically connected to the first wiring 77A, the second wiring 77B, the third wiring 77C, the fourth wiring 77D, the fifth wiring 77E, the conductive portion 75b, and the conductive portion 75f. Through the control unit 70, the writing operation and the reading operation with respect to the first element 11E and the second element 12E are performed.

[0397] In the magnetic device 140, the transistors for reading (the second transistor Tr2 and the fourth transistor Tr4) are shared by the first element 11E and the second element 12E. The number of transistors can be reduced. A magnetic device capable of high density can be provided. By sharing transistors, for example, power consumption can be reduced.

[0398] As Fig.21As shown, in this example, the second wiring 77B, the third wiring 77C, and the fourth wiring 77D extend in the Y-axis direction. The second transistor Tr2 is located between the first transistor Tr1 and the fifth transistor Tr5 in the Y-axis direction. The fourth transistor Tr4 is located between the third transistor Tr3 and the sixth transistor Tr6 in the Y-axis direction. The first gate Tg1, the second gate Tg2, and the fifth gate Tg5 overlap with the second wiring 77B in the Z-axis direction. The third gate Tg3, the fourth gate Tg4, and the sixth gate Tg6 overlap with the fourth wiring 77D in the Z-axis direction.

[0399] As Fig. 22 shown, in this example, in the Z-axis direction, the first conductive member 21 of the first element 11E overlaps with the first transistor Tr1 and the third transistor Tr3. In this example, in the Z-axis direction, the first conductive member 21 of the second element 12E overlaps with the fifth transistor Tr5 and the sixth transistor Tr6. The first stack S1 of the first element 11E overlaps with the first gate Tg1 in the Z-axis direction. The second stack S2 of the first element 11E overlaps with the third gate Tg3 in the Z-axis direction. The first stack S1 of the second element 12E overlaps with the fifth gate Tg5 in the Z-axis direction. The second stack S2 of the second element 12E overlaps with the sixth gate Tg6 in the Z-axis direction.

[0400] As Fig.23 shown, the first connection member CN1 overlaps with the first magnetic layer 11 of the first element 11E, the second other end Td2, and the first magnetic layer 11 of the second element 12E in the Z-axis direction. The second connection member CN2 overlaps with the second magnetic layer 12 of the first element 11E, the fourth other end Td4, and the second magnetic layer 12 of the second element 12E in the Z-axis direction. In the embodiment, at least any one of the second transistor Tr2 and the fourth transistor Tr4 may also include a region that does not overlap with the first conductive member 21.

[0401] As Fig.24 shown, the first wiring 77A and the fifth wiring 77E extend along the X-axis direction.

[0402] Fig.25 is a schematic perspective view illustrating a magnetic device according to the fourth embodiment.

[0403] Figure 26 to Figure 29 is a schematic top view illustrating a magnetic device according to the fourth embodiment.

[0404] Figure 26 to Figure 29 corresponds to the top view of each layer of the magnetic device.

[0405] As Fig.25As shown, in the magnetic device 141 according to the embodiment, in addition to the first element 11E and the second element 12E described with respect to the magnetic device 141, a third element 13E is also provided. A fourth element 14E, a fifth element 15E, and a sixth element 16E may also be provided. The structures of the first element 11E and the second element 12E in the magnetic device 141 are the same as the structures of the first element 11E and the second element 12E in the magnetic device 140.

[0406] The magnetic device 141 includes a third element 13E, a seventh transistor Tr7, an eighth transistor Tr8, a ninth transistor Tr9, a sixth wiring 77F, a seventh wiring 77G, an eighth wiring 77H, and a ninth wiring 77I.

[0407] As Fig.25 and Fig.26 shown, the seventh transistor Tr7 includes a seventh terminal Ts7, a seventh other terminal Td7, and a seventh gate Tg7, and is of a first conductivity type (e.g., n-type). The eighth transistor Tr8 includes an eighth terminal Ts8, an eighth other terminal Td8, and an eighth gate Tg8, and is of a second conductivity type (e.g., p-type). The ninth transistor Tr9 includes a ninth terminal Ts9, a ninth other terminal Td9, and a ninth gate Tg9, and is of a second conductivity type (e.g., p-type).

[0408] As Fig.25 shown, the second element 12E includes a first conductive member 21, a first laminate S1, and a second laminate S2. A fourth portion 21d of the first conductive member 21 of the first element 11E is electrically connected to a first portion 21a of the first conductive member 21 of the third element 13E. The fourth portion 21d of the first conductive member 21 of the first element 11E may also be continuous with the first portion 21a of the first conductive member 21 of the third element 13E. The boundary between the fourth portion 21d of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the third element 13E may be either clear or unclear.

[0409] As Fig.25 shown, the seventh other terminal Td7 is electrically connected to the fourth portion 21d of the first conductive member 21 of the third element 13E. The eighth other terminal Td8 is electrically connected to the first magnetic layer 11 of the third element 13E. In this example, this connection is made through a third connection member CN3. The ninth other terminal Td9 is electrically connected to the second magnetic layer 12 of the third element 13E. In this example, this connection is made through a fourth connection member CN4.

[0410] The sixth wiring 77F is electrically connected to the eighth gate Tg8. The sixth wiring 77F is, for example, the write and read word line W / R-WL3. The seventh wiring 77G is electrically connected to the seventh gate Tg7 and the ninth gate Tg9. The seventh wiring 77G is, for example, the write and read word line W / R-WL4. The eighth wiring 77H is electrically connected to the seventh terminal Ts7, the eighth terminal Ts8, and the ninth terminal Ts9. The eighth wiring 77H is, for example, the source line SL2. The third wiring 77C is, for example, the source line SL1. The ninth wiring 77I is electrically connected to the second part 21b of the first conductive member 21 of the third element 13E. In this example, this connection is made through the conductive portion 75g.

[0411] In the magnetic device 141, the potential of the first part 21a of the first conductive member 21 of the third element 13E is controlled by the third transistor Tr3. The third transistor Tr3 is shared by the first element 11E and the third element 13E. The number of transistors can be reduced. A magnetic device capable of high density can be provided. By sharing transistors, for example, power consumption can be reduced.

[0412] As Fig.26 shown, the fifth wiring 77F, the seventh wiring 77G, and the eighth wiring 77H extend along the Y-axis direction. In this example, the positions of the fifth transistor Tr5 and the sixth transistor Tr6 in the Y-axis direction are between the positions of the second transistor Tr2 and the fourth transistor Tr4 in the Y-axis direction and the positions of the eighth transistor Tr8 and the ninth transistor Tr9 in the Y-axis direction. In this example, in the X-axis direction, the third transistor Tr3 is between the first transistor Tr1 and the seventh transistor Tr7.

[0413] In the Z-axis direction, the eighth gate Tg8 overlaps with the sixth wiring 77F. The seventh gate Tg7 and the ninth gate Tg9 overlap with the seventh wiring 77G. The seventh terminal Ts7, the eighth terminal Ts8, and the ninth terminal Ts9 overlap with the eighth wiring 77H.

[0414] As Fig. 27 shown, the first stack S1 of the third element 13E overlaps with the sixth wiring 77F in the Z-axis direction. The second stack S2 of the third element 13E overlaps with the seventh wiring 77G in the Z-axis direction.

[0415] As Fig.28 shown, the third connection member CN3 overlaps with the first magnetic layer 11 of the third element 13E and the eighth other end Td8 in the Z-axis direction. The fourth connection member CN4 overlaps with the second magnetic layer 12 of the third element 13E and the ninth other end Td9 in the Z-axis direction.

[0416] As Fig.29As shown, the first wiring 77A (write and read bit line W / R-BL1), the fifth wiring 77E (write and read bit line W / R-BL2), and the ninth wiring 77I (write and read bit line W / R-BL3) extend along the X-axis direction.

[0417] As Fig.25 shown, the magnetic device 141 may also include other elements (such as the fourth element 14E, the fifth element 15E, and the sixth element 16E, etc.). For example, the fourth element 14E may have the same structure as the third element 13E. For example, the fifth element 15E may have the same structure as the second element 12E. For example, the sixth element 16E may have the same structure as the third element 13E.

[0418] The second part 21b of the first conductive member 21 of the fourth element 14E is electrically connected to the write and read word line W / R-WL4 through the conductive portion 75h. The fourth part 21d of the first conductive member 21 of the fourth element 14E is electrically connected to the tenth transistor Tr10.

[0419] The second part 21b of the first conductive member 21 of the fifth element 15E is electrically connected to the write and read word line W / R-WL5 through the conductive portion 75i. The first part 21a of the first conductive member 21 of the fifth element 15E is electrically connected to the eleventh transistor Tr11. The fourth part 21d of the first conductive member 21 of the fifth element 15E is electrically connected to the twelfth transistor Tr12.

[0420] The second part 21b of the first conductive member 21 of the sixth element 16E is electrically connected to the write and read word line W / R-WL6 through the conductive portion 75j. The fourth part 21d of the first conductive member 21 of the sixth element 16E is electrically connected to the thirteenth transistor Tr13.

[0421] The tenth transistor Tr10, the eleventh transistor Tr11, the twelfth transistor Tr12, and the thirteenth transistor Tr13 are, for example, n-type.

[0422] The second wiring 77B is electrically connected to the first gate Tg1, the second gate Tg2, the fifth gate Tg5, and the gate of the eleventh transistor Tr11. The third wiring 77C is electrically connected to the first terminal Ts1, the second terminal Ts2, the third terminal Ts3, the fourth terminal Ts4, the fifth terminal Ts5, the sixth terminal Ts6, the terminal (source) of the eleventh transistor Tr11, and the terminal (source) of the twelfth transistor Tr12. The fourth wiring 77D is electrically connected to the third gate Tg3, the fourth gate Tg4, the sixth gate Tg6, and the gate of the twelfth transistor Tr12. The seventh wiring 77G is electrically connected to the seventh gate Tg7, the ninth gate Tg9, the gate of the tenth transistor Tr10, and the gate of the thirteenth transistor Tr13. The eighth wiring 77H is electrically connected to the seventh terminal Ts7, the eighth terminal Ts8, the ninth terminal Ts9, the terminal (source) of the tenth transistor Tr10, and the terminal (source) of the thirteenth transistor Tr13.

[0423] As Fig.29 shown, corresponding to the fourth element 14E, write and read bit lines W / R-BL4 are provided. Corresponding to the fifth element 15E, write and read bit lines W / R-BL5 are provided. Corresponding to the sixth element 16E, write and read bit lines W / R-BL6 are provided. These bit lines extend along the X-axis direction.

[0424] Fig.30 is a schematic top view illustrating the magnetic device according to the fourth embodiment.

[0425] As Fig.30 shown, in the magnetic device 142 according to the embodiment, in addition to the first to sixth elements 11E to 16E, a seventh element 17E and an eighth element 18E are further provided. Corresponding to the seventh element 17E, write and read bit lines W / R-BL7 are provided. Corresponding to the eighth element 18E, write and read bit lines W / R-BL8 are provided. These bit lines extend along the X-axis direction. The number of elements provided in the magnetic device is arbitrary.

[0426] (Fifth Embodiment)

[0427] Fig.31 is a schematic perspective view illustrating the magnetic device according to the fifth embodiment.

[0428] As Fig.31 shown, the magnetic device 150 according to the embodiment includes a first element 11E, a second element 12E, first to seventh transistors Tr1 to Tr7, and first to eighth wirings 77A to 77H.

[0429] The first transistor Tr1 includes a first terminal Ts1, a first other terminal Td1, and a first gate Tg1, and is of a first conductivity type (e.g., n-type). The second transistor Tr2 includes a second terminal Ts2, a second other terminal Td2, and a second gate Tg2, and is of a second conductivity type (e.g., p-type). The third transistor Tr3 includes a third terminal Ts3, a third other terminal Td3, and a third gate Tg3, and is of the first conductivity type. The fourth transistor Tr4 includes a fourth terminal Ts4, a fourth other terminal Td4, and a fourth gate Tg4, and is of the second conductivity type. The fifth transistor Tr5 includes a fifth terminal Ts5, a fifth other terminal Td5, and a fifth gate Tg5, and is of the first conductivity type. The sixth transistor Tr6 includes a sixth terminal Ts6, a sixth other terminal Td6, and a sixth gate Tg6, and is of the second conductivity type. The seventh transistor Tr7 includes a seventh terminal Ts7, a seventh other terminal Td7, and a seventh gate Tg7, and is of the second conductivity type.

[0430] Each of the first element 11E and the second element 12E includes a first conductive member 21, a first laminate S1, and a second laminate S2. In the magnetic device 150, the structures related to them that have been described can also be applied to the first conductive member 21, the first laminate S1, and the second laminate S2.

[0431] The fourth portion 21d of the first conductive member 21 of the first element 11E is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E. In this example, the fourth portion 21d of the first conductive member 21 of the first element 11E can also be continuous with the first portion 21a of the first conductive member 21 of the third element 13E. The boundary between the fourth portion 21d of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the third element 13E can be either clear or unclear.

[0432] The first other terminal Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other terminal Td2 is electrically connected to the first magnetic layer 11 of the first element 11E. The third other terminal Td3 is electrically connected to the fourth portion 21d of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the second element 12E. The fourth other terminal Td4 is electrically connected to the second magnetic layer 12 of the first element 11E.

[0433] The fifth other terminal Td5 is electrically connected to the fourth portion 21d of the first conductive member 21 of the second element 12E. The sixth other terminal Td6 is electrically connected to the first magnetic layer 11 of the second element 12E. The seventh other terminal Td7 is electrically connected to the second magnetic layer 12 of the second element 12E.

[0434] The first wiring 77A is electrically connected to the second part 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first terminal Ts1, the second terminal Ts2, the third terminal Ts3, and the fourth terminal Ts4. The fourth wiring 77D is electrically connected to the third gate Tg3 and the fourth gate Tg4. The fifth wiring 77E is electrically connected to the second part 21b of the first conductive member 21 of the second element 12E.

[0435] The sixth wiring 77F is electrically connected to the sixth gate Tg6. The seventh wiring 77G is electrically connected to the fifth gate Tg5 and the seventh gate Tg7. The eighth wiring 77H is electrically connected to the fifth terminal Ts5, the sixth terminal Ts6, and the seventh terminal Ts7.

[0436] In the magnetic device 150, the potential of the first part 21a of the first conductive member 21 of the third element 13E is controlled by the third transistor Tr3. The third transistor Tr3 is shared by the first element 11E and the third element 13E. The number of transistors can be reduced. A magnetic device capable of high density can be provided. By sharing transistors, for example, power consumption can be reduced.

[0437] In the structure of each layer of the elements included in the magnetic device 150, the structure described for the magnetic device 141 can also be applied.

[0438] (Sixth Embodiment)

[0439] Fig.32 It is a schematic perspective view illustrating the magnetic device according to the sixth embodiment.

[0440] Figure 33 to Figure 37 It is a schematic top view illustrating the magnetic device according to the sixth embodiment.

[0441] Figure 33 to Figure 37 It corresponds to the top view of each layer of the magnetic device.

[0442] As Fig.32 shown, the magnetic device 160 according to the embodiment includes a first element 11E, a second element 12E, a third element 13E, a first transistor Tr1, a second transistor Tr2, a third transistor Tr4, a first wiring 77A, a second wiring 77B, a third wiring 77C, a fourth wiring 77D, a fifth wiring 77E, and a sixth wiring 77F.

[0443] As Fig.32 and Fig.33As shown, the first transistor Tr3 includes a first terminal Ts1, a first other terminal Td1, and a first gate Tg1, and is of a first conductivity type (e.g., n-type). The second transistor Tr2 includes a second terminal Ts2, a second other terminal Td3, and a second gate Tg2, and is of a second conductivity type (e.g., p-type). The third transistor Tr3 includes a third terminal Ts3, a third other terminal Td3, and a third gate Tg3, and is of the first conductivity type. The fourth transistor Tr4 includes a fourth terminal Ts4, a fourth other terminal Td4, and a fourth gate Tg4, and is of the second conductivity type.

[0444] At least a part of the first terminal Ts1 may also overlap with at least a part of the third terminal Ts3. At least a part of the second terminal Ts2 may also overlap with at least a part of the fourth terminal Ts4. The first terminal Ts1 may also be substantially the same as the third terminal Ts3. The second terminal Ts2 may also be substantially the same as the fourth terminal Ts4.

[0445] Each of the first element 11E, the second element 12E, and the third element 13E includes a first conductive member 21, a first laminate S1, and a second laminate S2. In the magnetic device 160, the structures related to them that have been described may also be applied to the first conductive member 21, the first laminate S1, and the second laminate S2.

[0446] The first other terminal Td1 is electrically connected to a first part 21a of the first conductive member 21 of the first element 11E and a first part 21a of the first conductive member 21 of the third element 13E. In this example, this connection is made, for example, through the conductive portion 75a and the conductive portion 75d.

[0447] The second other terminal Td2 is electrically connected to the first magnetic layer 11 of the first element 11E and the first magnetic layer 11 of the second element 12E. In this example, this connection is made through the first connection member CN1.

[0448] The third other terminal Td3 is electrically connected to a fourth part 21d of the first conductive member 21 of the first element 11E and a fourth part 21d of the first conductive member 21 of the third element 13E. In this example, this connection is made through the conductive portion 75c and the conductive portion 75e.

[0449] The fourth other terminal Td4 is electrically connected to the second magnetic layer 12 of the first element 11E and the second magnetic layer 12 of the second element 12E. In this example, this connection is made through the second connection member CN2.

[0450] The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first terminal Ts1, the second terminal Ts2, the third terminal Ts3, and the fourth terminal Ts4. The fourth wiring 77D is electrically connected to the third gate Tg3 and the fourth gate Tg4. The first wiring 77A is, for example, a write and read bit line W / R-BL1.

[0451] The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E. In this example, this connection is made through the conductive portion 75h. The fifth wiring 77E is, for example, a write and read bit line W / R-BL2.

[0452] The sixth wiring 77F is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E. In this example, this connection is made through the conductive portion 75i. The sixth wiring 77F is, for example, a write and read bit line W / R-BL3.

[0453] In the magnetic device 160, the first transistor Tr1 can control the potential of the first portion 21a of the first conductive member 21 of the first element 11E and the potential of the first portion 21a of the first conductive member 21 of the third element 13E. The third transistor Tr3 can control the potential of the fourth portion 21d of the first conductive member 21 of the first element 11E and the potential of the fourth portion 21d of the first conductive member 21 of the third element 13E. The first transistor Tr1 and the third transistor Tr3 are shared by the first element 11E and the third element 13E.

[0454] The second transistor Tr2 can control the potential of the first magnetic layer 11 of the first element 11E and the potential of the first magnetic layer 11 of the second element 12E. The fourth transistor Tr4 can control the potential of the second magnetic layer 12 of the first element 11E and the potential of the second magnetic layer 12 of the second element 12E. The second transistor Tr2 and the fourth transistor Tr4 are shared by the first element 11E and the second element 12E. The number of transistors can be reduced. A magnetic device capable of high density can be provided. By sharing transistors, for example, power consumption can be reduced.

[0455] As Fig.34 shown, the conductive portion 75a and the conductive portion 75d may be continuous with each other. The conductive portion 75c and the conductive portion 75e may be continuous with each other.

[0456] As Fig.33 and Fig.35As shown, a transistor Tn for the second element 12E is provided. The transistor Tn is of the first conduction type. A transistor Tp for the third element 13E is provided. The transistor Tp is of the second conduction type.

[0457] As Fig.35 shown, for example, the length of the first laminate S1 in the X-axis direction is longer than the length of the first laminate S1 in the Y-axis direction. For example, the length of the second laminate S2 in the X-axis direction is longer than the length of the second laminate S2 in the Y-axis direction. For example, in each of the first element 11E, the second element 11E, and the third element 13E, the magnetization 11om of the first opposed magnetic layer 11o and the magnetization 12om of the second opposed magnetic layer 12o are along the Y-axis direction in the stable state.

[0458] As Fig.36 shown, for example, the length of the first connection member CN1 in the Y-axis direction is longer than the length of the first connection member CN1 in the X-axis direction. For example, the length of the second connection member CN2 in the Y-axis direction is longer than the length of the second connection member CN2 in the X-axis direction. A third connection member CN3 and a fourth connection member CN4 for the third element 13E may be provided.

[0459] As Fig.37 shown, the first wiring 77A (write and read bit line W / R-BL1), the fifth wiring 77E (write and read bit line W / R-BL2), and the sixth wiring 77F (write and read bit line W / R-BL3) extend along the X-axis direction.

[0460] (Seventh Embodiment)

[0461] Fig.38 , Fig.39 (a) and Fig.39 (b) are schematic views illustrating the magnetic device according to the seventh embodiment.

[0462] As Fig.38 shown, the magnetic device 170 according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, a first wiring 77A, a second wiring 77B, a third wiring 77C, and a fourth wiring 77D. The first transistor Tr1 includes a first terminal Ts1, a first other end Td1, and a first gate Tg1. The first transistor Tr1 is a transistor of the first conduction type (e.g., p-type). The second transistor Tr2 includes a second terminal Ts2, a second other end Td2, and a second gate Tg2. The second transistor Tr2 is a transistor of the second conduction type (e.g., p-type).

[0463] As Fig.39 (a) and Fig.39As shown in (b), each of the first element 11E and the second element 12E includes a first conductive member 21, a first laminate S1, and a first diode DE1. The first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. The third portion 21c is between the first portion 21a and the second portion 21b. The first laminate S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o. The first opposed magnetic layer 11o is provided between the third portion 21c and the first magnetic layer 11. In this example, a first non-magnetic layer 11n is provided between the first opposed magnetic layer 11o and the first magnetic layer 11.

[0464] One of the anode DA1 and the cathode DC1 of the first diode DE1 is electrically connected to the first magnetic layer 11. Hereinafter, one of the anode DA1 and the cathode DC1 is set as the anode DA1. The anode DA1 is, for example, laminated with the first laminate S1. The anode DA1 is, for example, in contact with the first laminate S1.

[0465] As Fig.38 shown, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E.

[0466] The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E and the second portion 21b of the first conductive member 21 of the second element 12E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first terminal Ts1 and the second terminal Ts2.

[0467] As Fig.38 shown, the fourth wiring 77D is electrically connected to the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the first element 11E and the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the second element 12E.

[0468] The first wiring 77A is, for example, the write bit line WBL1. The second wiring 77B is, for example, the word line WL. The third wiring 77C is, for example, the source line SL. The fourth wiring 77D is, for example, the read bit line RBL1.

[0469] Hereinafter, one of the anode DA1 and the cathode DC1 is set as the anode DA1, and the other of the anode DA1 and the cathode DC1 is set as the cathode DC1.

[0470] In an embodiment, one of the anode DA1 and the cathode DC1 may be the cathode DC1, and the other of the anode DA1 and the cathode DC1 may be the anode DA1. When one of the anode DA1 and the cathode DC1 is the cathode DC1 and the other of the anode DA1 and the cathode DC1 is the anode DA1, the polarity of the voltage applied to the bit line for reading is opposite to the polarity of the voltage applied to the bit line for reading when one of the anode DA1 and the cathode DC1 is the anode DA1 and the other of the anode DA1 and the cathode DC1 is the cathode DC1.

[0471] Fig.40 、 Fig.41 (a) and Fig.41 (b) are schematic diagrams illustrating the magnetic device according to the seventh embodiment.

[0472] Fig.41 (a) is a top view corresponding to the X-Y plane including the transistor. Fig.41 (b) is a top view corresponding to the X-Y plane including the first conductive member 21.

[0473] As Fig.40 shown, the first portion 21a of the first element 11E is connected to the first other end Td1. As Fig.41 (a) and Fig.41 (b) shown, at least a part of the first conductive member 21 of the first element 11E overlaps with the first transistor Tr1 in the second direction (for example, the Z-axis direction). The second direction intersects the first direction (X-axis direction) from the first portion 21a to the second portion 21b.

[0474] As Fig.40 shown, the first portion 21a of the second element 12E is connected to the second other end Td2. As Fig.41 (a) and Fig.41 (b) shown, at least a part of the first conductive member 21 of the second element 12E overlaps with the second transistor Tr2 in the second direction (for example, the Z-axis direction).

[0475] Fig.42 (a) to Fig.42 (d) are schematic diagrams illustrating the magnetic device according to the seventh embodiment.

[0476] These illustrate the operation in the magnetic device 170.

[0477] As Fig.42 (a) shown, in the writing operation to the first element 11E, the write bit line WBL1 becomes "conductive", the read bit line RBL1 becomes "non-conductive", and the word line WL becomes "conductive". The write current wc1 flows through the first conductive member 21 of the first element 11E and the first transistor Tr1.

[0478] As Fig.42 shown in (b), in the write operation to the second element 12E, the write bit line WBL1 becomes "conductive", the read bit line RBL1 becomes "non-conductive", and the word line WL becomes "non-conductive". The write current wc2 flows through the first conductive member 21 of the second element 11E and the second transistor Tr2.

[0479] As Fig.42 shown in (c), in the read operation of the first element 11E, the write bit line WBL1 becomes "non-conductive", the read bit line RBL1 becomes "conductive", and the word line WL becomes "conductive". The read current rc1 flows through the first transistor Tr1 and the first element 11E (the first stack S1 and the first diode DE1).

[0480] As Fig.42 shown in (d), in the read operation of the second element 12E, the write bit line WBL1 becomes "non-conductive", the read bit line RBL1 becomes "conductive", and the word line WL becomes "non-conductive". The read current rc2 flows through the second transistor Tr2 and the second element 12E (the first stack S1 and the first diode DE1).

[0481] Fig.43 , Fig.44 (a) and Fig.44 (b) are schematic diagrams illustrating the magnetic device according to the seventh embodiment.

[0482] As Fig.43 shown, the magnetic device 171 according to the embodiment further includes a third element 13E, a fourth element 14E, a third transistor Tr3, a fourth transistor Tr4, a fifth wiring 77E, a sixth wiring 77F, and a seventh wiring 77G in addition to the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, the first wiring 77A, the second wiring 77B, the third wiring 77C, and the fourth wiring 77D. The structures of the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, the first wiring 77A, the second wiring 77B, the third wiring 77C, and the fourth wiring 77D in the magnetic device 171 are the same as those in the magnetic device 170.

[0483] The third transistor Tr3 includes a third terminal Ts3, a third other end Td3, and a third gate Tg3. The third transistor Tr3 is a transistor of the first conduction type (e.g., n-type). The fourth transistor Tr4 includes a fourth terminal Ts4, a fourth other end Td4, and a fourth gate Tg4. The fourth transistor Tr4 is a transistor of the second conduction type (e.g., p-type).

[0484] As Fig.44 (a) and Fig.44 (b) show, each of the third element 13E and the fourth element 14E includes the first conductive member 21, the first laminate S1, and the first diode DE1 described above.

[0485] As Fig.43 shown, the third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.

[0486] The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E and the second portion 21b of the first conductive member 21 of the fourth element 14E. The sixth wiring 77F is electrically connected to the third gate Tg3 and the fourth gate Tg4. The third wiring 77C is also electrically connected to the third end Ts3 and the fourth end Ts4. The seventh wiring 77G is electrically connected to the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the third element 13E and the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the fourth element 14E. For example, the other of the anode DA1 and the cathode DC1 is the cathode DC1.

[0487] The second wiring 77B is, for example, the word line WL1. The fifth wiring 77E is, for example, the write bit line WBL2. The sixth wiring 77F is, for example, the word line WL2. The seventh wiring 77G is, for example, the read bit line RBL2.

[0488] In the magnetic device 171, the same operation as that of the magnetic device 170 can be performed.

[0489] Fig.45 (a) to Fig.45 (c) are schematic views illustrating the magnetic device according to the seventh embodiment.

[0490] Fig.45 (a) is a top view corresponding to the X-Y plane including the transistor. Fig.45 (b) is a top view corresponding to the X-Y plane including the first conductive member 21.

[0491] As Fig.45 (a) and Fig.45 (b) show, at least a part of the first conductive member 21 of the first element 11E overlaps with the first transistor Tr1 in the second direction (for example, the Z-axis direction). The second direction intersects the first direction (X-axis direction) from the first portion 21a to the second portion 21b. At least a part of the first conductive member 21 of the second element 12E overlaps with the second transistor Tr2 in the second direction (for example, the Z-axis direction).

[0492] As shown in Fig.45 (a) and Fig.45 (c), at least a part of the first conductive member 21 of the third element 13E overlaps with the third transistor Tr3 in the second direction (e.g., the Z-axis direction). At least a part of the first conductive member 21 of the fourth element 14E overlaps with the fourth transistor Tr4 in the second direction (e.g., the Z-axis direction).

[0493] Fig.46 It is a schematic diagram illustrating the magnetic device according to the seventh embodiment.

[0494] As shown in Fig.46 , the magnetic device 172 according to the embodiment also includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, a first wiring 77A, a second wiring 77B, a third wiring 77C, and a fourth wiring 77D. In this example, the first transistor Tr1 is also a transistor of the first conductivity type, and the second transistor Tr2 is also a transistor of the second conductivity type. One of the anode DA1 and the cathode DC1 of the first diode DE1 (e.g., the anode DA1) is electrically connected to the first magnetic layer 11 (see Fig.39 (a) and Fig.39 (b)). Hereinafter, regarding the example of the structure of the magnetic device 172, the description of the same parts as the structure of the magnetic device 170 will be appropriately omitted.

[0495] The first other end Td1 is electrically connected to the first part 21a of the first conductive member 21 of the first element 11E and the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the second element 12E (e.g., the cathode DC1). The second other end Td2 is electrically connected to the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the first element 11E (e.g., the cathode DC1) and the first part 21a of the first conductive member 21 of the second element 12E.

[0496] The first wiring 77A is electrically connected to the second part 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first terminal Ts1 and the second terminal Ts2. The fourth wiring 77D is electrically connected to the second part 21b of the first conductive member 21 of the second element 12E.

[0497] The first wiring 77A is, for example, a bit line BL1. The second wiring 77B is, for example, a word line WL. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a bit line BL2.

[0498] In the magnetic device 172, the read current of one element flows through the first conductive member 21 of the other element.

[0499] (Eighth Embodiment)

[0500] Fig.47 is a schematic diagram illustrating a magnetic device according to the eighth embodiment.

[0501] As Fig.47 shown, the magnetic device 180 according to the embodiment includes first to fourth elements 11E to 14E, first to fourth transistors Tr1 to Tr4, and first to eleventh wirings 77A to 77K. The first transistor Tr1 includes a first terminal Ts1, a first other terminal Td1, and a first gate Tg1. The second transistor Tr2 includes a second terminal Ts2, a second other terminal Td2, and a second gate Tg2. The third transistor Tr3 includes a third terminal Ts3, a third other terminal Td3, and a third gate Tg1. The fourth transistor Tr4 includes a fourth terminal Ts4, a fourth other terminal Td4, and a fourth gate Tg4. In the eighth embodiment, the conductivity type of the second transistor Tr2 may be the same as or different from that of the first transistor Tr1. In the eighth embodiment, the conductivity type of the fourth transistor Tr4 may be the same as or different from that of the third transistor Tr3. Hereinafter, the first to fourth transistors Tr1 to Tr4 are transistors of a first conductivity type (e.g., n-type).

[0502] In the magnetic device 180, each of the first element 11E, the second element 12E, the third element 13E, and the fourth element 14E also includes the above-described first conductive member 21, the first laminate S1, and the first diode DE1 (see Fig.39 (a), Fig.39 (b), Fig.44 (a), and Fig.44 (b)). One of the anode DA1 and the cathode DC1 of the first diode DE1 (e.g., the anode DA1) is electrically connected to the first magnetic layer 11.

[0503] As Fig.47 shown, the first other terminal Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other terminal Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E. The third other terminal Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth other terminal Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.

[0504] The first wiring 77A is electrically connected to the second part 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first terminal Ts1, the second terminal Ts2, the third terminal Ts3, and the fourth terminal Ts4. The fourth wiring 77D is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (for example, the cathode DC1).

[0505] The fifth wiring 77E is electrically connected to the second part 21b of the first conductive member 21 of the second element 12E. The sixth wiring 77F is electrically connected to the third gate Tg3 and the fourth gate Tg4. The seventh wiring 77G is electrically connected to the anode DA1 of the first diode DE1 of the second element 12E and the other of the cathode DC1 (for example, the cathode DC1). The eighth wiring 77H is electrically connected to the second part 21b of the first conductive member 21 of the third element 13E. The ninth wiring 77I is electrically connected to the anode DA1 of the first diode DE1 of the third element 13E and the other of the cathode DC1 (for example, the cathode DC1). The tenth wiring 77J is electrically connected to the second part 21b of the first conductive member 21 of the fourth element 14E. The eleventh wiring 77K is electrically connected to the anode DA1 of the first diode DE1 of the fourth element 14E and the other of the cathode DC1 (for example, the cathode DC1).

[0506] The first wiring 77A is, for example, the write bit line WBL1. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is, for example, the source line SL. The fourth wiring 77D is, for example, the read bit line RBL1. The fifth wiring 77E is, for example, the write bit line WBL2. The sixth wiring 77F is, for example, the word line WL2. The seventh wiring 77G is, for example, the write bit line WBL2. The eighth wiring 77H is, for example, the write bit line WBL3. The ninth wiring 77I is, for example, the read bit line RBL3. The tenth wiring 77J is, for example, the write bit line WBL4. The eleventh wiring 77K is, for example, the read bit line RBL4.

[0507] Fig.48 , Fig.49 (a) to Fig.49 (e) are schematic views illustrating the magnetic device according to the eighth embodiment.

[0508] Fig.49 (a) is a top view corresponding to the X-Y plane including the transistor. Fig.49 (b) is a top view corresponding to the X-Y plane including the first conductive member 21 of the first element 11E and the second element 12E. Fig.49 (c) is a top view corresponding to the X-Y plane including the first conductive member 21 of the third element 13E and the fourth element 14E. Fig.49 (d) is a sectional view in the Z-Y plane including the first element 11E and the second element 12E. Fig.49 (e) is a sectional view in the Z-Y plane including the third element 13E and the fourth element 14E. In these sectional views, the insulating members are omitted.

[0509] As Fig.48 shown, the first part 21a of the first element 11E is connected to the first other end Td1. The first part 21a of the second element 12E is connected to the second other end Td2. The first part 21a of the third element 13E is connected to the third other end Td3. The first part 21a of the fourth element 14E is connected to the fourth other end Td4.

[0510] As Fig.49 (a), Fig.49 (b), and Fig.49 (d) shown, at least a part (e.g., the first part 21a) of the first conductive member 21 of the first element 11E overlaps with the first transistor Tr1 in the second direction (e.g., the Z-axis direction). The second direction intersects the first direction (X-axis direction) from the first part 21a to the second part 21b. At least a part (e.g., the first part 21a) of the first conductive member 21 of the second element 12E overlaps with the second transistor Tr2 in the second direction (e.g., the Z-axis direction).

[0511] As Fig.49 (a), Fig.49 (c), and Fig.49 (e) shown, at least a part (e.g., the first part 21a) of the first conductive member 21 of the third element 13E overlaps with the third transistor Tr3 in the second direction (e.g., the Z-axis direction). At least a part (e.g., the first part 21a) of the first conductive member 21 of the fourth element 14E overlaps with the fourth transistor Tr4 in the second direction (e.g., the Z-axis direction).

[0512] The direction from the first transistor Tr1 to the third transistor Tr3 is along the first direction (e.g., the X-axis direction). The direction from the second transistor Tr2 to the fourth transistor Tr4 is along the first direction. The direction from the second transistor Tr2 to the first transistor Tr1 includes a component in the third direction. The third direction intersects the plane including the first direction and the second direction. The third direction is, for example, the Y-axis direction. The direction from the fourth transistor Tr4 to the third transistor Tr3 includes a component in the third direction.

[0513] As Fig.49 (d), and Fig.49As shown in (e), the position of the first element 11E in the second direction (Z-axis direction) is between the position of the first transistor Tr1 in the second direction and the position of the third element 13E in the second direction. The position of the first element 11E in the second direction is between the position of the first transistor Tr1 in the second direction and the position of the fourth element 14E in the second direction. The position of the second element 12E in the second direction is between the position of the second transistor Tr2 in the second direction and the position of the third element 13E in the second direction. The position of the second element 12E in the second direction is between the position of the second transistor Tr2 in the second direction and the position of the fourth element 14E in the second direction. The position in the second direction corresponds to, for example, the position in the height direction.

[0514] Fig.50 , Fig.51 (a) to Fig.51 (e) is a schematic diagram illustrating the magnetic device according to the eighth embodiment.

[0515] Fig.50 is a schematic diagram illustrating the magnetic device 181 according to the embodiment. The configuration of the elements in the magnetic device 181 is different from the configuration of the elements in the magnetic device 180. Other structures in the magnetic device 181 are the same as the structures in the magnetic device 180. Hereinafter, an example of the configuration of the elements in the magnetic device 181 will be described.

[0516] Fig.51 (a) is a top view corresponding to the X-Y plane including the transistor. Fig.51 (b) is a top view corresponding to the X-Y plane of the first conductive member 21 including the first element 11E and the second element 12E. Fig.51 (c) is a top view corresponding to the X-Y plane of the first conductive member 21 including the third element 13E and the fourth element 14E. Fig.51 (d) is a sectional view in the Z-Y plane including the first element 11E and the third element 13E. Fig.51 (e) is a sectional view in the Z-Y plane including the second element 12E and the fourth element 14E. In these sectional views, the insulating members are omitted.

[0517] As Fig.51 (a), Fig.51 (b) and Fig.51 (d) show that at least a part (for example, the first part 21a) of the first conductive member 21 of the first element 11E overlaps with the first transistor Tr1 in the second direction (for example, the Z-axis direction). As Fig.51 (e) shows, at least a part (for example, the first part 21a) of the first conductive member 21 of the second element 12E overlaps with the second transistor Tr2 in the second direction.

[0518] As shown in Fig.51 (a), Fig.51 (c), and Fig.51 (d), at least a part (e.g., the first part 21a) of the first conductive member 21 of the third element 13E overlaps with the third transistor Tr3 in the second direction. As shown in Fig.51 (e), at least a part (e.g., the first part 21a) of the first conductive member 21 of the fourth element 14E overlaps with the fourth transistor Tr4 in the second direction.

[0519] The direction from the first transistor Tr1 to the fourth transistor Tr4 is along the first direction (X-axis direction). The direction from the third transistor Tr3 to the second transistor Tr2 is along the first direction. The direction from the third transistor Tr3 to the first transistor Tr1 includes a component in the third direction. The third direction intersects with the plane including the first direction and the second direction. The third direction is, for example, the Y-axis direction. The direction from the second transistor Tr2 to the fourth transistor Tr4 includes a component in the third direction.

[0520] As shown in Fig.51 (d), the position of the first element 11E in the second direction (e.g., Z-axis direction) is between the position of the first transistor Tr1 in the second direction and the position of the third element 13E in the second direction. As shown in Fig.51 (e), the position of the second element 12E in the second direction is between the position of the second transistor Tr2 in the second direction and the position of the fourth element 14E in the second direction.

[0521] In the magnetic device 181, compared with the magnetic device 180, for example, it is easy to suppress the interference between the densities of multiple elements. For example, it is easy to increase the density of multiple elements.

[0522] Fig.52 (a) and Fig.52 (b) are schematic cross-sectional views of a part of the magnetic device according to the exemplary embodiment.

[0523] As shown in Fig.52 (a), in the magnetic device 185, the first diode DE1 includes, for example, a metal silicide layer DsL. The metal silicide layer DsL contains, for example, at least one selected from the group consisting of Ni, Al, Au, Pt, Er, Co, Pd, Ti, and B and silicon. By having such a structure for the first diode DE1, for example, high heat resistance can be obtained. The first diode DE1 corresponds to a Schottky diode, for example.

[0524] In an embodiment, the shape of the first diode DE1 in the X-Y plane may be substantially the same as the shape of the first stack S1 in the X-Y plane. Metal silicides tend to have large stress. When forming a metal silicide, the structure changes according to the structure of the material that forms the basis of the metal silicide. As a result, large stress occurs. Thus, for example, the stress of the metal silicide layer DsL of the first diode DE1 is applied to the first stack S1. It is easy to control the magnetization of the magnetic layer included in the first stack S1 by the anisotropy caused by stress. For example, in the first stack S1 applying an in-plane magnetization configuration, stable magnetization can be easily obtained. Thus, even when the first stack S1 is miniaturized, stable operation can be obtained. For example, a large-capacity magnetic device can be easily obtained. The melting points of Ni, Co, Pt, and Pd are relatively close to the process temperature when forming the first stack S1. By including these materials in the metal silicide layer DsL, a high yield can be easily obtained.

[0525] As Fig.52 (b) shows, in the magnetic device 186, the metal silicide layer DsL of the first diode DE1 may also include a plurality of metal layers DsL1 and a plurality of silicon layers DsL2. One of the plurality of metal layers DsL1 is between one of the plurality of silicon layers DsL2 and another one of the plurality of silicon layers DsL2. One of the plurality of silicon layers DsL2 is between one of the plurality of metal layers DsL1 and another one of the plurality of metal layers DsL1. A silicide is formed by the plurality of metal layers DsL1 and the plurality of silicon layers DsL2. For example, stable rectifying characteristics can be easily obtained. Thus, the first diode DE1 may also include a metal silicide. Stable characteristics can be easily obtained, and a magnetic device capable of high density can be provided.

[0526] The structures of the magnetic devices 185 and 186 can be applied to any magnetic device according to the seventh embodiment and the eighth embodiment.

[0527] Fig.53 is a schematic diagram illustrating a magnetic device according to an exemplary embodiment.

[0528] As Fig.53 shown, the magnetic device 187a according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, and first to sixth wirings 77A to 77F. The first transistor Tr1 includes a first terminal Ts1, a first other end Td1, and a first gate Tg1. The second transistor Tr2 includes a second terminal Ts2, a second other end Td2, and a second gate Tg2. The conductivity type of the second transistor Tr2 may be the same as or different from the conductivity type of the first transistor Tr1.

[0529] In the magnetic device 187a, each of the first element 11E and the second element 12E also includes the above-described first conductive member 21, the first laminate S1, and the first diode DE1 (see Fig.39 (a) and Fig.39 (b)). One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.

[0530] As Fig.53 shown, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E.

[0531] The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1 and the second end Ts2. The fourth wiring 77D is electrically connected to the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the first element 11E (for example, the cathode DC1). The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E. The sixth wiring 77F is electrically connected to the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the second element 12E (for example, the cathode DC1).

[0532] In the magnetic device 187a, for example, the first wiring 77A, the third wiring 77C, the fourth wiring 77D, the fifth wiring 77E, and the sixth wiring 77F extend along the first extension direction Dx1 (for example, one of the Y-axis direction and the X-axis direction). For example, the second wiring 77B extends along the second extension direction Dx2 (for example, the other of the Y-axis direction and the X-axis direction) that intersects the first extension direction Dx1. The plane including the first extension direction Dx1 and the second extension direction Dx2 intersects the Z-axis direction. The plane including the first extension direction Dx1 and the second extension direction Dx2 is, for example, perpendicular to the Z-axis direction.

[0533] In the magnetic device 187a, the first wiring 77A is, for example, the write bit line WBL1. The second wiring 77B is, for example, the word line WL. The third wiring 77C is, for example, the source line SL. The fourth wiring 77D is, for example, the read bit line RBL1. The fifth wiring 77E is, for example, the write bit line WBL2. The sixth wiring 77F is, for example, the read bit line RBL2.

[0534] Fig.54 is a schematic diagram of the magnetic device according to the exemplary embodiment.

[0535] As Fig.54 As shown, in the magnetic device 187b related to the embodiment, it also includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, and first to sixth wirings 77A to 77F. The electrical connection relationships of these elements in the magnetic device 187b are the same as those in the magnetic device 187a. The extending direction of the wirings in the magnetic device 187a is different from the extending direction of the wirings in the magnetic device 187a.

[0536] In the magnetic device 187b, for example, the first wiring 77A, the third wiring 77C, and the fifth wiring 77E extend along a first extending direction Dx1 (for example, one of the Y-axis direction and the X-axis direction). The second wiring 77B, the fourth wiring 77D, and the sixth wiring 77F extend along a second extending direction Dx2 (for example, the other of the Y-axis direction and the X-axis direction) that intersects the first extending direction Dx1.

[0537] In the magnetic device 187b, the first wiring 77A is, for example, a write bit line WBL1. The second wiring 77B is, for example, a word line WL. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a read bit line RBL1. The fifth wiring 77E is, for example, a write bit line WBL2. The sixth wiring 77F is, for example, a read bit line RBL2.

[0538] Fig.55 It is a schematic diagram illustrating the magnetic device related to the embodiment.

[0539] As Fig.55 shown, in addition to the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to sixth wirings 77A to 77F, the magnetic device 187c related to the embodiment further includes a third element 13E, a fourth element 14E, a third transistor Tr3, a fourth transistor Tr4, and seventh to eleventh wirings 77G to 77K. In the magnetic device 187c, the structures of the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to sixth wirings 77A to 77F can be the same as those in the magnetic device 187a, for example. The magnetic device 187c can be substantially the same as the magnetic device 180.

[0540] The third transistor Tr3 includes a third terminal Ts3, a third other terminal Td3, and a third gate Tg3. The fourth transistor Tr4 includes a fourth terminal Ts4, a fourth other terminal Td4, and a fourth gate Tg4. The conduction types of the third transistor Tr3 and the fourth transistor Tr4 can be the same as or different from the conduction type of the first transistor Tr1.

[0541] In the magnetic device 187c, each of the third element 13E and the fourth element 14E also includes the first conductive member 21, the first laminate S1, and the first diode DE1 (see Fig.44 (a) and Fig.44 (b)). One of the anode DA1 and the cathode DC1 of the first diode DE1 (e.g., the anode DA1) is electrically connected to the first magnetic layer 11.

[0542] As Fig.55 shown, the third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.

[0543] The third wiring 77C is also electrically connected to the third terminal Ts3 and the fourth terminal Ts4. The seventh wiring 77G is electrically connected to the third gate Tg3 and the fourth gate Tg4. The eighth wiring 77H is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E. The ninth wiring 77I is electrically connected to the other one of the anode DA1 and the cathode DC1 of the first diode DE1 of the third element 13E. The tenth wiring 77J is electrically connected to the second portion 21b of the first conductive member 21 of the fourth element 14E. The eleventh wiring 77K is electrically connected to the other one of the anode DA1 and the cathode DC1 of the first diode DE1 of the fourth element 14E.

[0544] In the magnetic device 187c, for example, the first wiring 77A, the third wiring 77C, the fourth wiring 77D, the fifth wiring 77E, the sixth wiring 77F, the eighth wiring 77H, the ninth wiring 77I, the tenth wiring 77J, and the eleventh wiring 77K extend along the first extension direction Dx1 (e.g., one of the Y-axis direction and the X-axis direction). The second wiring 77B and the seventh wiring 77G extend along the second extension direction Dx2 (e.g., the other of the Y-axis direction and the X-axis direction) that intersects the first extension direction Dx1.

[0545] In the magnetic device 187c, the first wiring 77A is, for example, the write bit line WBL1. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is, for example, the source line SL. The fourth wiring 77D is, for example, the read bit line RBL1. The fifth wiring 77E is, for example, the write bit line WBL2. The sixth wiring 77F is, for example, the read bit line RBL2. The seventh wiring 77G is, for example, the word line WL2. The eighth wiring 77H is, for example, the write bit line WBL3. The ninth wiring 77I is, for example, the read bit line RBL3. The tenth wiring 77J is, for example, the write bit line WBL4. The eleventh wiring 77K is, for example, the read bit line WBL4.

[0546] Fig.56 It is a schematic diagram of the magnetic device related to the exemplary embodiment.

[0547] As Fig.56 shown, the magnetic device 187d related to the embodiment also includes first to fourth elements 11E to 14E, first to fourth transistors Tr1 to TR4, and first to eleventh wirings 77A to 77K. In the magnetic device 187d, the electrical connection relationships of the transistors and the wirings are the same as those in the magnetic device 187c. The extending direction of the wirings in the magnetic device 187d is different from that of the wirings in the magnetic device 187c.

[0548] In the magnetic device 187d, for example, the first wiring 77A, the third wiring 77C, the fifth wiring 77E, the eighth wiring 77H, and the tenth wiring 77J extend along a first extending direction Dx1 (for example, one of the Y-axis direction and the X-axis direction). The second wiring 77B, the fourth wiring 77D, the sixth wiring 77F, the seventh wiring 77G, the ninth wiring 77I, and the eleventh wiring 77K extend along a second extending direction Dx2 (for example, the other of the Y-axis direction and the X-axis direction) that intersects the first extending direction Dx1.

[0549] In the magnetic device 187d, the first wiring 77A is, for example, a write bit line WBL1. The second wiring 77B is, for example, a word line WL1. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a read word line RWL1. The fifth wiring 77E is, for example, a write bit line WBL2. The sixth wiring 77F is, for example, a read word line RWL2. The seventh wiring 77G is, for example, a word line WL2. The eighth wiring 77H is, for example, a write bit line WBL3. The ninth wiring 77I is, for example, a read word line RWL3. The tenth wiring 77J is, for example, a write bit line WBL4. The eleventh wiring 77K is, for example, a read word line RWL4.

[0550] Fig.57 It is a schematic diagram of the magnetic device related to the exemplary embodiment.

[0551] As Fig.57 shown, in the magnetic device 187d related to the embodiment, the first part 21a of the first element 11E is connected to a first other end Td1. The first part 21a of the second element 12E is connected to a second other end Td2. The first part 21a of the third element 13E is connected to a third other end Td3. The first part 21a of the fourth element 14E is connected to a fourth other end Td4.

[0552] Fig.58 It is a schematic diagram of the magnetic device related to the exemplary embodiment.

[0553] As Fig.58As shown, the magnetic device 187e according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, and first to seventh wirings 77A to 77G. The first transistor Tr1 includes a first terminal Ts1, a first other terminal Td1, and a first gate Tg1. The second transistor Tr2 includes a second terminal Ts2, a second other terminal Td2, and a second gate Tg2. The conductivity type of the second transistor Tr2 may be the same as or different from that of the first transistor Tr1.

[0554] In the magnetic device 187e, each of the first element 11E and the second element 12E also includes the above-described first conductive member 21, first laminate S1, and first diode DE1 (see Fig.39 (a) and Fig.39 (b)). One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.

[0555] As Fig.58 shown, the first other terminal Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other terminal Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E.

[0556] The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E and the second portion 21b of the first conductive member 21 of the second element 12E. The second wiring 77B is electrically connected to the first gate Tg1. The third wiring 77C is electrically connected to the first terminal Ts1. The fourth wiring 77D is electrically connected to the anode DA1 and the other of the cathode DC1 of the first diode DE1 of the first element 11E (for example, the cathode DC1). The fifth wiring 77E is electrically connected to the second gate Tg2. The sixth wiring 77F is electrically connected to the second terminal Ts2. The seventh wiring 77G is electrically connected to the anode DA1 and the other of the cathode DC1 of the first diode DE1 of the second element 12E (for example, the cathode DC1).

[0557] In the magnetic device 187e, the first wiring 77A, the third wiring 77C, and the sixth wiring 77F extend along a first extension direction Dx1 (for example, one of the Y-axis direction and the X-axis direction). For example, the second wiring 77B, the fourth wiring 77D, the fifth wiring 77E, and the seventh wiring 77G extend along a second extension direction Dx2 that intersects the first extension direction Dx1 (for example, the other of the Y-axis direction and the X-axis direction).

[0558] In the magnetic device 187e, the first wiring 77A is, for example, a common line CL. The second wiring 77B is, for example, a word line WL1. The third wiring 77C is, for example, a source line SL1 (or a write bit line WBL1). The fourth wiring 77D is, for example, a read bit line RBL1-L. The fifth wiring 77E is, for example, a word line WL2. The sixth wiring 77F is, for example, a source line SL2 (or a write bit line WBL2). The seventh wiring 77G is, for example, a read bit line RBL1-R.

[0559] Fig.59 It is a schematic diagram of the magnetic device according to the exemplary embodiment.

[0560] As Fig.59 shown, in addition to the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to seventh wirings 77A to 77G, the magnetic device 187f according to the embodiment further includes a third element 13E, a fourth element 14E, a third transistor Tr3, a fourth transistor Tr4, and eighth to tenth wirings 77H to 77J. In the magnetic device 187f, the structures of the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to seventh wirings 77A to 77G can be the same as those in the magnetic device 187e, for example.

[0561] The third transistor Tr3 includes a third terminal Ts3, a third other end Td3, and a third gate Tg3. The fourth transistor Tr4 includes a fourth terminal Ts4, a fourth other end Td4, and a fourth gate Tg4. The conduction types of the third transistor Tr3 and the fourth transistor Tr4 can be the same as or different from the conduction type of the first transistor Tr1.

[0562] In the magnetic device 187f, each of the third element 13E and the fourth element 14E also includes the above-described first conductive member 21, the first laminate S1, and the first diode DE1 (see Fig.44 (a) and Fig.44 (b)). One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.

[0563] As Fig.59 shown, the third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.

[0564] The first wiring 77A is electrically connected to the second part 21b of the first conductive member 21 of the first element 11E and the second part 21b of the first conductive member 21 of the second element 12E. The second wiring 77B is electrically connected to the third gate Tg3 in addition to the first gate Tg1. The third wiring 77C is electrically connected to the third terminal Ts3 in addition to the first terminal Ts1. The fourth wiring 77D is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (e.g., the cathode DC1). The fifth wiring 77E is electrically connected to the fourth gate Tg4 in addition to the second gate Tg2. The sixth wiring 77F is electrically connected to the fourth terminal Ts4 in addition to the second terminal Ts2. The seventh wiring 77G is electrically connected to the anode DA1 of the first diode DE1 of the second element 12E and the other of the cathode DC1 (e.g., the cathode DC1).

[0565] The eighth wiring 77H is electrically connected to the second part 21b of the first conductive member 21 of the third element 13E and the second part 21b of the first conductive member 21 of the fourth element 14E. The ninth wiring 77I is electrically connected to the anode DA1 of the first diode DE1 of the third element 13E and the other of the cathode DC1 (e.g., the cathode DC1). The tenth wiring 77J is electrically connected to the anode DA1 of the first diode DE1 of the fourth element 14E and the other of the cathode DC1 (e.g., the cathode DC1).

[0566] In the magnetic device 187f, the first wiring 77A, the third wiring 77C, the sixth wiring 77F, and the eighth wiring 77H extend along a first extension direction Dx1 (e.g., one of the Y-axis direction and the X-axis direction). The second wiring 77B, the fourth wiring 77D, the fifth wiring 77E, the seventh wiring 77G, the ninth wiring 77I, and the tenth wiring 77J extend along a second extension direction Dx2 that intersects the first extension direction Dx1 (e.g., the other of the Y-axis direction and the X-axis direction).

[0567] In the magnetic device 187f, for example, the first wiring 77A is, for example, the common line CL1. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is the source line SL1 (or the write bit line WBL1). The fourth wiring 77D is, for example, the read bit line RBL1-L. The fifth wiring 77E is, for example, the word line WL2. The sixth wiring 77F is, for example, the source line SL2 (or the write bit line WBL2). The seventh wiring 77G is, for example, the read bit line RBL1-R. The eighth wiring 77H is, for example, the common line CL2. The ninth wiring 77I is, for example, the read bit line RBL2-L. The tenth wiring 77J is, for example, the read bit line RBL2-L.

[0568] Fig.60 and Fig.61It is a schematic top view of a magnetic device according to an exemplary embodiment.

[0569] Figures 62 to 73 It is a schematic cross-sectional view of a magnetic device according to an exemplary embodiment.

[0570] Fig.60 It is a top view in a plane including a transistor (semiconductor region). Fig.61 It is a top view when a part of the components is transmitted. These planes are substantially perpendicular to the Z-axis direction. Figure 62 to Figure 68 It is along Fig.60 and Fig.61 Cross-sectional views taken along the X1-X1 line, X2-X2 line, X3-X3 line, X4-X4 line, X5-X5 line, X6-X6 line, and X7-X7 line. Figures 69 to 73 It is along Fig.60 and Fig.61 Cross-sectional views taken along the Y1-Y1 line, Y2-Y2 line, Y3-Y3 line, Y4-Y4 line, and Y5-Y5 line.

[0571] As Figures 62 to 73 shown, the first to fourth transistors Tr1 to Tr4 are included in the semiconductor region 79. The semiconductor region 79 can be, for example, a semiconductor substrate. For example, the first to fourth elements 11E to 14E and the first to tenth wirings 77A to 77J are provided on the semiconductor region 79.

[0572] As Fig.62 shown, the third other end Td3 is electrically connected to the first conductive member 21 corresponding to the third element 13E through the connection member 78d and the connection member 78c. The eighth wiring 77H overlaps the first wiring 77A in the third direction. The third direction intersects the plane including the first extension direction Dx1 and the second extension direction Dx2. The third direction is, for example, the Z-axis direction. The positions of the first wiring 77A and the eighth wiring 77H in the second extension direction Dx2 are between the position of the third wiring 77C in the second extension direction Dx2 and the position of the sixth wiring 77F in the second extension direction Dx2. The first other end Td1 is electrically connected to the first conductive member 21 corresponding to the first element 11E through the connection member 78s.

[0573] As Fig.63 shown, the first diode DE1 of the first element 11E is electrically connected to the fourth wiring 77D through the connection member 78a. The first diode DE1 of the third element 13E is electrically connected to the ninth wiring 77I through the connection member 78b. The ninth wiring 77I overlaps the fourth wiring 77D in the third direction (for example, the Z-axis direction).

[0574] As Fig.64As shown, the third terminal Ts3 is electrically connected to the third wiring 77C via connection components 78j, 78k, and 78l. The first terminal Ts1 is electrically connected to the third wiring 77C via connection components 78i, 78k, and 78l.

[0575] As Fig.65 shown, the first conductive component 21 corresponding to the first element 11E and the second element 12E is electrically connected to the first wiring 77A via the connection component 78q. The first conductive component 21 corresponding to the third element 13E and the fourth element 14E is electrically connected to the eighth wiring 77H via the connection component 78r.

[0576] As Fig.66 shown, the fourth terminal Ts4 is electrically connected to the sixth wiring 77F via connection components 78n, 78p, and 78o. The second terminal Ts2 is electrically connected to the sixth wiring 77F via connection components 78m, 78p, and 78o.

[0577] As Fig.67 shown, the first diode DE1 of the second element 12E is electrically connected to the seventh wiring 77G via the connection component 78e. The first diode DE1 of the fourth element 14E is electrically connected to the tenth wiring 77J via the connection component 78f. The tenth wiring 77J overlaps with the seventh wiring 77G in the third direction (e.g., the Z-axis direction).

[0578] As Fig.68 shown, the fourth other end Td4 is electrically connected to the first conductive component 21 corresponding to the fourth element 14E via the connection component 78h and the connection component 78g. The second other end Td2 is electrically connected to the first conductive component 21 corresponding to the second element 12E via the connection component 78t.

[0579] As Fig.69 shown, the ninth wiring 77I overlaps with the fourth wiring 77D in the third direction (e.g., the Z-axis direction). The tenth wiring 77J overlaps with the seventh wiring 77G in the third direction (e.g., the Z-axis direction). The third other end Td3 is electrically connected to the first conductive component 21 corresponding to the third element 13E via the connection components 78d and 78c. In the embodiment, the connection component 78d may also overlap with the first conductive component 21 corresponding to the third element 13E in the Z-axis direction. In this case, the connection component 78c may also be omitted.

[0580] As Fig.70 shown, the third wiring 77C is electrically connected to the connection components 78l and 78k.

[0581] As Fig.71As shown, the first other end Td1 is electrically connected to the first conductive member 21 corresponding to the first element 11E through the connection member 78s. The second other end Td2 is electrically connected to the first conductive member 21 corresponding to the second element 12E through the connection member 78t. The first conductive member 21 corresponding to the first element 11E and the second element 12E is electrically connected to the first wiring 77A through the connection member 78q. The first conductive member 21 corresponding to the third element 13E and the fourth element 14E is electrically connected to the eighth wiring 77H through the connection member 78r.

[0582] As Fig.72 shown, the sixth wiring 77F is electrically connected to the connection members 78p and 78o.

[0583] As Fig.73 shown, the fourth other end Td4 is electrically connected to the first conductive member 21 corresponding to the fourth element 14E through the connection members 78h and 78g.

[0584] In the magnetic devices 187a to 187f, the first diode DE1 may include a metal silicide.

[0585] According to the embodiment, a magnetic device capable of high density can be provided.

[0586] In the present specification, "vertical" and "parallel" not only mean strict vertical and strict parallel, but also include, for example, deviations in the manufacturing process, etc., and substantially vertical and substantially parallel are sufficient.

[0587] As described above, the embodiments of the present invention have been described with reference to specific examples. However, the present invention is not limited to these specific examples. For example, regarding the specific structures of the various elements such as the conductive members, elements, laminates, magnetic layers, non-magnetic layers, conductive portions, insulating portions, and control portions included in the magnetic device, as long as those skilled in the art can implement the present invention in the same manner by appropriately selecting from the known range and obtain the same effects, they are included in the scope of the present invention.

[0588] Examples obtained by combining any two or more elements of the specific examples within the technically possible range are also included in the scope of the present invention as long as they include the gist of the present invention.

[0589] In addition, as embodiments of the present invention, all magnetic devices obtained by appropriately changing the design and implementing based on the above magnetic device by those skilled in the art are also included in the scope of the present invention as long as they include the gist of the present invention.

[0590] In addition, within the scope of the idea of the present invention, those skilled in the art can conceive of various modification examples and correction examples, and it should be understood that these modification examples and correction examples also belong to the scope of the present invention.

[0591] Although several embodiments of the present invention have been described, these embodiments are illustrative and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the invention described in the claims and the scope of equivalents thereof.

Claims

1. A magnetic device, comprising: A first element; A second element; A first transistor, including a first terminal, a first other terminal, and a first gate; A second transistor, including a second terminal, a second other terminal, and a second gate; and First to sixth wirings, Each of the first element and the second element includes a first conductive member, a first laminate, and a first diode, The first conductive member includes a first portion, a second portion, and a third portion, and the third portion is between the first portion and the second portion, The first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third portion and the first magnetic layer, One of the anode and the cathode of the first diode is electrically connected to the first magnetic layer, The first other terminal is electrically connected to the first portion of the first conductive member of the first element, The second other terminal is electrically connected to the first portion of the first conductive member of the second element, The first wiring is electrically connected to the second portion of the first conductive member of the first element, The second wiring is electrically connected to the first gate and the second gate, The third wiring is electrically connected to the first terminal and the second terminal, The fourth wiring is electrically connected to the anode and the other of the cathode of the first diode of the first element, The fifth wiring is electrically connected to the second portion of the first conductive member of the second element, The sixth wiring is electrically connected to the anode and the other of the cathode of the first diode of the second element.

2. The magnetic device according to claim 1, wherein, The first wiring, the third wiring, the fourth wiring, the fifth wiring, and the sixth wiring extend along a first extending direction, The second wiring extends along a second extending direction intersecting the first extending direction.

3. The magnetic device according to claim 1, wherein, The first wiring, the third wiring, and the fifth wiring extend along a first extending direction, The second wiring, the fourth wiring, and the sixth wiring extend along a second extending direction intersecting the first extending direction.

4. The magnetic device according to claim 1, wherein, Further comprising: A third element; A fourth element; A third transistor, including a third terminal, a third other terminal, and a third gate; A fourth transistor, including a second terminal, a second other terminal, and a second gate; and Seventh to eleventh wirings, Each of the third element and the fourth element includes the first conductive member, the first laminate, and the first diode, The third other terminal is electrically connected to the first portion of the first conductive member of the third element, The fourth other terminal is electrically connected to the first portion of the first conductive member of the fourth element, The third wiring is further electrically connected to the third terminal and the fourth terminal, The seventh wiring is electrically connected to the third gate and the fourth gate, The eighth wiring is electrically connected to the second portion of the first conductive member of the third element, The 9th wiring is electrically connected to the anode of the first diode of the 3rd element and the other of the cathode, The 10th wiring is electrically connected to the second part of the first conductive member of the 4th element, The 11th wiring is electrically connected to the anode of the first diode of the 4th element and the other of the cathode.

5. The magnetic device according to claim 4, wherein, The 1st wiring, the 3rd wiring, the 4th wiring, the 5th wiring, the 6th wiring, the 8th wiring, the 9th wiring, the 10th wiring, and the 11th wiring extend along a first extension direction, The 2nd wiring and the 7th wiring extend along a second extension direction intersecting the first extension direction.

6. The magnetic device according to claim 4, wherein, At least a part of the first conductive member of the first element overlaps with the first transistor in a second direction intersecting a first direction from the first part of the first conductive member of the first element to the second part of the first conductive member of the first element, At least a part of the first conductive member of the second element overlaps with the second transistor in the second direction, At least a part of the first conductive member of the third element overlaps with the third transistor in the second direction, At least a part of the first conductive member of the fourth element overlaps with the fourth transistor in the second direction, The direction from the first transistor to the fourth transistor is along the first direction, The direction from the third transistor to the second transistor is along the first direction, The direction from the third transistor to the first transistor includes a component of a third direction intersecting a plane including the first direction and the second direction, The direction from the second transistor to the fourth transistor includes a component of the third direction.

7. The magnetic device according to claim 4, wherein, The 1st wiring, the 3rd wiring, the 5th wiring, the 8th wiring, and the 10th wiring extend along a first extension direction, The 2nd wiring, the 4th wiring, the 6th wiring, the 7th wiring, the 9th wiring, and the 11th wiring extend along a second extension direction intersecting the first extension direction.

8. A magnetic device, comprising: A first element; A second element; A first transistor, including a first end, a first other end, and a first gate; A second transistor, including a second end, a second other end, and a second gate; The 1st to 7th wirings, A third element; A fourth element; A third transistor, including a third end, a third other end, and a third gate; A fourth transistor, including a fourth end, a fourth other end, and a fourth gate; and The 8th to 10th wirings, Each of the first element and the second element includes a first conductive member, a first laminate, and a first diode, The first conductive member includes a first part, a second part, and a third part, and the third part is between the first part and the second part, The first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third portion and the first magnetic layer. One of the anode and the cathode of the first diode is electrically connected to the first magnetic layer. The first other end is electrically connected to the first portion of the first conductive member of the first element. The second other end is electrically connected to the first portion of the first conductive member of the second element. The first wiring is electrically connected to the second portion of the first conductive member of the first element and the second portion of the first conductive member of the second element. The second wiring is electrically connected to the first gate. The third wiring is electrically connected to the first end. The fourth wiring is electrically connected to the anode and the other of the cathode of the first diode of the first element. The fifth wiring is electrically connected to the second gate. The sixth wiring is electrically connected to the second end. The seventh wiring is electrically connected to the anode and the other of the cathode of the first diode of the second element. Each of the third element and the fourth element includes the first conductive member, the first laminate, and the first diode. The third other end is electrically connected to the first portion of the first conductive member of the third element. The fourth other end is electrically connected to the first portion of the first conductive member of the fourth element. The second wiring is also electrically connected to the third gate. The third wiring is also electrically connected to the third end. The fifth wiring is also electrically connected to the fourth gate. The sixth wiring is also electrically connected to the fourth end. The eighth wiring is electrically connected to the second portion of the first conductive member of the third element and the second portion of the first conductive member of the fourth element. The ninth wiring is electrically connected to the anode and the other of the cathode of the first diode of the third element. The tenth wiring is electrically connected to the anode and the other of the cathode of the first diode of the fourth element.

9. The magnetic device according to claim 8, wherein, the first wiring, the third wiring, the sixth wiring, and the eighth wiring extend along a first extending direction, and the second wiring, the fourth wiring, the fifth wiring, the seventh wiring, the ninth wiring, and the tenth wiring extend along a second extending direction intersecting the first extending direction.

10. A magnetic device, comprising: a first element including a first conductive member and a first laminate, and the first conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion, and the first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third portion and the first magnetic layer; a first transistor of a first conductivity type including a first end, a first other end, and a first gate; a second transistor of a second conductivity type including a second end, a second other end, and a second gate; a first wiring; a second wiring; and a third wiring, The other end of the first is electrically connected to the first part. The other end of the second is electrically connected to the first magnetic layer. The first wiring is electrically connected to the second part. The second wiring is electrically connected to the first gate and the second gate. The third wiring is electrically connected to the first end and the second end.

11. The magnetic device according to claim 10, wherein, it further includes a control unit, the control unit is electrically connected to the first wiring, the second wiring, and the third wiring, the control unit is capable of performing a first write operation and a first read operation, in the first write operation, the control unit makes the second wiring in a selected state, and supplies current between the first part and the second part via the first transistor, in the first read operation, the control unit makes the second wiring in a non-selected state, and detects a value corresponding to the resistance of the first stacked body via the second transistor.

12. The magnetic device according to claim 10, wherein, it further includes: a third transistor of the first conductivity type, including a third end, a third other end, and a third gate; a fourth transistor of the second conductivity type, including a fourth end, a fourth other end, and a fourth gate; and a fourth wiring, the first element further includes a second stacked body, the first conductive member includes a fourth part and a fifth part, and the fifth part is between the second part and the fourth part, the second stacked body includes a second magnetic layer and a second opposing magnetic layer provided between the fifth part and the second magnetic layer, the third other end is electrically connected to the fourth part, the fourth other end is electrically connected to the second magnetic layer, the fourth wiring is electrically connected to the third gate and the fourth gate, the third wiring is electrically connected to the third end and the fourth end.

13. The magnetic device according to claim 12, wherein, it further includes a control unit, the control unit is electrically connected to the first wiring, the second wiring, the third wiring, and the fourth wiring, the control unit is capable of performing a first write operation, a second write operation, a first read operation, and a second read operation, in the first write operation, the control unit makes the second wiring in a selected state, and supplies current between the first part and the second part via the first transistor, in the second write operation, the control unit makes the fourth wiring in a selected state, and supplies current between the fourth part and the second part via the third transistor, in the first read operation, the control unit makes the second wiring in a non-selected state, and detects a value corresponding to the resistance of the first stacked body via the second transistor, in the second read operation, the control unit makes the fourth wiring in a non-selected state, and detects a value corresponding to the resistance of the second stacked body via the fourth transistor.

14. A magnetic device, comprising: a first element; a second element; a first transistor of the first conductivity type, including a first end, a first other end, and a first gate; A second transistor of a second conductivity type, including a second terminal, a second opposite terminal, and a second gate; The third transistor of a first conductivity type, including a third terminal, a third opposite terminal, and a third gate; The fourth transistor of a second conductivity type, including a fourth terminal, a fourth opposite terminal, and a fourth gate; The fifth transistor of a first conductivity type, including a fifth terminal, a fifth opposite terminal, and a fifth gate; The sixth transistor of a first conductivity type, including a sixth terminal, a sixth opposite terminal, and a sixth gate; A first wiring; A second wiring; A third wiring; A fourth wiring; and A fifth wiring, Each of the first element and the second element includes a first conductive member, a first laminate, and a second laminate, The first conductive member includes a first portion, a second portion, a third portion, a fourth portion, and a fifth portion. The second portion is between the first portion and the fourth portion. The third portion is between the first portion and the second portion. The fifth portion is between the second portion and the fourth portion. The first laminate includes a first magnetic layer and a first opposing magnetic layer disposed between the third portion and the first magnetic layer; The second laminate includes a second magnetic layer and a second opposing magnetic layer disposed between the fifth portion and the second magnetic layer; The first opposite terminal is electrically connected to the first portion of the first conductive member of the first element; The second opposite terminal is electrically connected to the first magnetic layer of the first element and the first magnetic layer of the second element; The third opposite terminal is electrically connected to the fourth portion of the first conductive member of the first element; The fourth opposite terminal is electrically connected to the second magnetic layer of the first element and the second magnetic layer of the second element; The fifth opposite terminal is electrically connected to the first portion of the first conductive member of the second element; The sixth opposite terminal is electrically connected to the fourth portion of the first conductive member of the second element; The first wiring is electrically connected to the second portion of the first conductive member of the first element; The second wiring is electrically connected to the first gate, the second gate, and the fifth gate; The third wiring is electrically connected to the first terminal, the second terminal, the third terminal, the fourth terminal, the fifth terminal, and the sixth terminal; The fourth wiring is electrically connected to the third gate, the fourth gate, and the sixth gate; The fifth wiring is electrically connected to the second portion of the first conductive member of the second element.

15. The magnetic device according to claim 14, wherein, further comprising: A third element; The seventh transistor of a first conductivity type, including a seventh terminal, a seventh opposite terminal, and a seventh gate; The eighth transistor of a second conductivity type, including an eighth terminal, an eighth opposite terminal, and an eighth gate; The ninth transistor of a second conductivity type, including a ninth terminal, a ninth opposite terminal, and a ninth gate; A sixth wiring; A seventh wiring; An eighth wiring; and A ninth wiring, The third element includes the first conductive member, the first laminate, and the second laminate. The fourth part of the first conductive member of the first element is electrically connected to the first part of the first conductive member of the third element. The other end of the seventh is electrically connected to the fourth part of the first conductive member of the third element. The other end of the eighth is electrically connected to the first magnetic layer of the third element. The other end of the ninth is electrically connected to the second magnetic layer of the third element. The sixth wiring is electrically connected to the eighth gate. The seventh wiring is electrically connected to the seventh gate and the ninth gate. The eighth wiring is electrically connected to the seventh end, the eighth end, and the ninth end. The ninth wiring is electrically connected to the second part of the first conductive member of the third element.

16. A magnetic device, comprising: A first element; A second element; A first transistor of a first conductivity type, including a first end, a first other end, and a first gate; A second transistor of a second conductivity type, including a second end, a second other end, and a second gate; The third transistor of the first conductivity type, including a third end, a third other end, and a third gate; The fourth transistor of the second conductivity type, including a fourth end, a fourth other end, and a fourth gate; The fifth transistor of the first conductivity type, including a fifth end, a fifth other end, and a fifth gate; The sixth transistor of the second conductivity type, including a sixth end, a sixth other end, and a sixth gate; The seventh transistor of the second conductivity type, including a seventh end, a seventh other end, and a seventh gate; A first wiring; A second wiring; A third wiring; A fourth wiring; A fifth wiring; A sixth wiring; A seventh wiring; and An eighth wiring, Each of the first element and the second element includes a first conductive member, a first laminate, and a second laminate. The first conductive member includes a first part, a second part, a third part, a fourth part, and a fifth part. The second part is between the first part and the fourth part. The third part is between the first part and the second part. The fifth part is between the second part and the fourth part. The first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third part and the first magnetic layer. The second laminate includes a second magnetic layer and a second opposing magnetic layer provided between the fifth part and the second magnetic layer. The fourth part of the first conductive member of the first element is electrically connected to the first part of the first conductive member of the second element. The first other end is electrically connected to the first part of the first conductive member of the first element. The second other end is electrically connected to the first magnetic layer of the first element. The third other end is electrically connected to the fourth part of the first conductive member of the first element and the first part of the first conductive member of the second element. The fourth other end is electrically connected to the second magnetic layer of the first element. The other end of the fifth is electrically connected to the fourth part of the first conductive component of the second element, The other end of the sixth is electrically connected to the first magnetic layer of the second element, The other end of the seventh is electrically connected to the second magnetic layer of the second element, The first wiring is electrically connected to the second part of the first conductive component of the first element, The second wiring is electrically connected to the first gate and the second gate, The third wiring is electrically connected to the first end, the second end, the third end, and the fourth end, The fourth wiring is electrically connected to the third gate and the fourth gate, The fifth wiring is electrically connected to the second part of the first conductive component of the second element, The sixth wiring is electrically connected to the sixth gate, The seventh wiring is electrically connected to the fifth gate and the seventh gate, The eighth wiring is electrically connected to the fifth end, the sixth end, and the seventh end.

17. A magnetic device, comprising: A first element; A second element; A first transistor of a first conductivity type, including a first end, a first other end, and a first gate; A second transistor of a second conductivity type, including a second end, a second other end, and a second gate; A first wiring; A second wiring; A third wiring; and A fourth wiring, Each of the first element and the second element includes a first conductive component, a first laminate, and a first diode, The first conductive component includes a first part, a second part, and a third part, and the third part is between the first part and the second part, The first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third part and the first magnetic layer, One of the anode and the cathode of the first diode is electrically connected to the first magnetic layer, The first other end is electrically connected to the first part of the first conductive component of the first element, The second other end is electrically connected to the first part of the first conductive component of the second element, The first wiring is electrically connected to the second part of the first conductive component of the first element and the second part of the first conductive component of the second element, The second wiring is electrically connected to the first gate and the second gate, The third wiring is electrically connected to the first end and the second end, The fourth wiring is electrically connected to the anode and the other of the cathode of the first diode of the first element and the anode and the other of the cathode of the first diode of the second element.

18. A magnetic device, comprising: A first element; A second element; A first transistor of a first conductivity type, including a first end, a first other end, and a first gate; A second transistor of a second conductivity type, including a second end, a second other end, and a second gate; A first wiring; A second wiring; A third wiring; and A fourth wiring, Each of the first element and the second element includes a first conductive component, a first laminate, and a first diode, The first conductive component includes a first part, a second part, and a third part, and the third part is between the first part and the second part. The first laminate includes a first magnetic layer and a first opposing magnetic layer provided between the third part and the first magnetic layer. One of the anode and the cathode of the first diode is electrically connected to the first magnetic layer. The first other end is electrically connected to the first part of the first conductive component of the first element and the other of the anode and the cathode of the first diode of the second element. The second other end is electrically connected to the other of the anode and the cathode of the first diode of the first element and the first part of the first conductive component of the second element. The first wiring is electrically connected to the second part of the first conductive component of the first element. The second wiring is electrically connected to the first gate and the second gate. The third wiring is electrically connected to the first end and the second end. The fourth wiring is electrically connected to the second part of the first conductive component of the second element.

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