Test Structure

By designing a test structure with N metal and dielectric layers and using current sensing to monitor the isolation performance of the dielectric layer, the problem of quality assessment of small-volume test structures was solved, thereby improving the yield and reliability of semiconductor products.

CN114937655BActive Publication Date: 2026-05-26SHANGHAI HUALI MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI HUALI MICROELECTRONICS CORP
Filing Date
2022-04-20
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

Existing technologies cannot effectively monitor the quality of small-volume test structures in semiconductor manufacturing processes, making it difficult to assess the reliability of the metal dielectric layer and affecting product yield and reliability.

Method used

Design a test structure comprising N metal layers and a dielectric layer, wherein the metal layers are separated by the dielectric layer, and the metal strips and metal blocks are connected by a through-hole structure. A test pad is used to detect the current to determine the leakage current and monitor the isolation performance of the dielectric layer.

Benefits of technology

This enables quality monitoring of small-volume test structures, ensuring good isolation performance of the dielectric layer, reducing losses, and improving product yield and reliability.

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Abstract

This invention provides a test structure comprising: N metal layers arranged sequentially from bottom to top, separated by dielectric layers; each metal layer comprising several strip-shaped metal strips and several block-shaped metal blocks; the metal strips being arranged in parallel; several metal blocks being arranged between every two adjacent metal strips; and the metal strips, metal blocks, and metal strips and metal blocks being separated by dielectric layers; the metal strips of each metal layer being connected to the metal blocks of adjacent layers through via structures, and the via structures being separated by dielectric layers; a first test pad connected to the metal strips in all odd-numbered metal layers; and a second test pad connected to the metal strips in all even-numbered metal layers; and the current between the two test pads being used to determine whether there is leakage current between metal strips and metal blocks in the same layer, between adjacent metal layers, and / or between via structures and metal strips.
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