Method of manufacturing and structure of an IGBT device

Abstract

The application provides a manufacturing method and structure of an IGBT device, which comprises the following steps: firstly, providing a substrate and forming an insulating layer on the surface of the substrate; then, etching the insulating layer and the substrate to form a plurality of contact hole grooves; then, forming a contact metal on the side and bottom of the contact hole groove and the surface of the insulating layer, and the contact metals in each contact hole groove are connected; then, forming a front metal layer on the surface of the contact metal; finally, etching the front metal layer to form a front metal layer pattern, and etching and removing part of the contact metal by taking the metal layer pattern as a mask. The contact metal of the application can have a larger contact area with the front metal layer, thereby reducing the contact resistance between the contact metal and the front metal layer, and further reducing the on-state voltage drop of the IGBT. The IGBT structure of the application has a thicker metal on the surface, which improves the heat capacity of the metal, thereby being beneficial to heat dissipation during the operation of the device, reducing the working junction temperature of the IGBT, and improving the working life of the IGBT.

Description

Technical Field

[0001] This invention belongs to the field of power semiconductor device technology, and in particular relates to a manufacturing method and structure of an IGBT device. Background Technology

[0002] As a hybrid power device, the IGBT combines the characteristics of a MOS input structure and a bipolar output structure. Therefore, it possesses the advantages of MOSFETs (high input impedance, low power consumption in the drive circuit, simple driving, fast switching speed, and low switching losses) with those of bipolar power transistors (high current density, strong current handling capability, and low on-state voltage). Over the past forty years, the IGBT pitch has become increasingly smaller, and correspondingly, the size of its vias has also decreased. To ensure good via filling, the IGBT process requires depositing the contact via metal layer before depositing the front-side metal layer. For example... Figure 1 As shown, the current conventional IGBT manufacturing process involves first forming an insulating layer 2A on a substrate 1A, then etching the insulating layer 2A and the substrate 1A to form contact trenches 3A, followed by depositing contact metal 4A in the contact trenches 3A. Next, the contact metal 4A is removed from the substrate surface using chemical mechanical polishing (CMP) or an etching-back process. Then, a front-side metal layer 5A is deposited, followed by dry or wet etching of the front-side metal layer 5A. The final structure is as follows. Figure 1 While the above-mentioned conventional processes can be used to fabricate IGBT devices, the metal contact resistance is becoming increasingly important as the size of IGBT vias continues to shrink and the requirements for low on-state voltage drop in IGBTs become more stringent.

[0003] In current conventional IGBT manufacturing processes, if the W metal etch-back process is used, although the manufacturing cost is low, the large W grain size results in poor surface morphology of the remaining W at the top of the contact hole, and the inconsistent surface morphology of the W filling in each hole is also poor. This leads to different contact resistances between the W in each hole and the front metal layer, which in turn leads to poor uniformity of the outflow current in each hole and reduces device reliability. If the CMP process is used for W, the surface morphology of the remaining W at the top of the contact hole is good, but the CMP process is expensive. Summary of the Invention

[0004] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a manufacturing method and structure for an IGBT device, which solves the problems of high contact resistance between the front metal layer and the contact metal, high on-state voltage drop, and poor current uniformity in the prior art.

[0005] To achieve the above and other related objectives, the present invention provides a method for manufacturing an IGBT device, the method comprising at least:

[0006] 1) Provide a substrate, on which an insulating layer is formed;

[0007] 2) Etch the insulating layer and the substrate to form a plurality of contact hole grooves;

[0008] 3) Contact metal is formed on the side and bottom of the contact hole groove and on the surface of the insulating layer, and the contact metal in each of the contact hole grooves is connected;

[0009] 4) A front metal layer is formed on the contact metal surface;

[0010] 5) Etch the front metal layer to form a front metal layer pattern, and use the metal layer pattern as a mask to etch away part of the contact metal.

[0011] Optionally, in step 1), the substrate includes at least a substrate, a carrier storage doped region, a bulk doped region, a source doped region, and a trench gate structure. The substrate includes a first main surface and a second main surface opposite to each other. The trench gate structure is disposed on the first main surface and extends through the source doped region, the bulk doped region, and the carrier storage doped region into the substrate. The source doped region is disposed within the bulk doped region and is located on the side of the trench gate structure. The carrier storage doped region is disposed below the bulk doped region.

[0012] Optionally, in step 2), the insulating layer, the source doped region, and the bulk doped region are etched to form a plurality of contact hole grooves.

[0013] Optionally, in step 3), the method of forming the contact metal includes at least: forming an adhesion layer on the side and bottom of the contact hole groove and on the surface of the insulating layer; forming a barrier layer on the surface of the adhesion layer; and forming a contact metal layer on the surface of the barrier layer.

[0014] Optionally, the material of the front metal layer includes one or a combination of AlCu or AlSiCu.

[0015] Optionally, the thickness of the front metal layer is between 3 μm and 6 μm.

[0016] The present invention also provides an IGBT structure, the structure comprising at least:

[0017] The substrate has an insulating layer formed on its surface;

[0018] Multiple contact hole grooves are formed in the insulating layer and the substrate;

[0019] Contact metal is formed on the sides and bottom of the contact hole groove and on the surface of the insulating layer, and the contact metal in each of the contact hole grooves is connected.

[0020] A front metal layer pattern is formed on the contact metal surface.

[0021] Optionally, the substrate includes at least a substrate, a carrier storage doped region, a bulk doped region, a source doped region, and a trench gate structure. The substrate includes a first main surface and a second main surface opposite to each other. The trench gate structure is disposed on the first main surface and extends through the source doped region, the bulk doped region, and the carrier storage doped region into the substrate. The source doped region is disposed within the bulk doped region and is located on the side of the trench gate structure. The carrier storage doped region is disposed below the bulk doped region.

[0022] Optionally, a plurality of the contact hole grooves are formed in the insulating layer, the source doped region, and the bulk doped region.

[0023] Optionally, the contact metal includes:

[0024] An adhesive layer is formed on the sides and bottom of the contact hole groove and on the surface of the insulating layer;

[0025] A barrier layer is formed on the surface of the adhesive layer;

[0026] A contact metal layer is formed on the surface of the barrier layer.

[0027] Optionally, the material of the front metal layer pattern includes one or a combination of AlCu or AlSiCu.

[0028] Optionally, the thickness of the front metal layer pattern is between 3 μm and 6 μm.

[0029] As described above, the manufacturing method and structure of the IGBT device of the present invention have the following beneficial effects:

[0030] The contact metal of the present invention can have a larger contact area with the front metal layer, thereby reducing the contact resistance between the contact metal and the front metal layer, and thus reducing the on-state voltage drop of the IGBT.

[0031] The IGBT structure of the present invention has a thicker metal surface. The thicker the metal, the greater the metal heat capacity, which is beneficial for heat dissipation during device operation, reduces the IGBT junction temperature, and improves the IGBT lifespan. Attached Figure Description

[0032] Figure 1 This is a schematic diagram of an existing IGBT structure.

[0033] Figures 2-7 This is a schematic diagram showing the structure of each step in the manufacturing method of the IGBT device of the present invention.

[0034] Component designation explanation

[0035] 1,1A substrate

[0036] 11 Substrate

[0037] 12 Carrier storage doped regions

[0038] 13 bulk doped regions

[0039] 14 Source doped regions

[0040] 15 Gate dielectric layer

[0041] 16 polycrystalline silicon layers

[0042] 2,2A Insulation Layer

[0043] 3, 3A Contact Hole Groove

[0044] 4, 4A Contact Metal

[0045] 41 Adhesion layer

[0046] 42 Barrier Layer

[0047] 43 Contact metal layer

[0048] 5,5A Front Metal Layer

[0049] 6. Front metal pattern

[0050] 7 Hydrogen ion doped region

[0051] 8 Collector Region

[0052] 9. Metal back Detailed Implementation

[0053] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0054] Please refer to the accompanying drawings. It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0055] Example 1

[0056] like Figures 2-7 As shown, this embodiment provides a method for manufacturing an IGBT device, the method comprising at least the following steps:

[0057] like Figure 2 As shown, step 1) is performed first, a substrate 1 is provided, and an insulating layer 2 is formed on the surface of the substrate 1.

[0058] As an example, the substrate 1 includes at least a substrate 11, a carrier storage doped region 12, a bulk doped region 13, a source doped region 14, and a trench gate structure. The substrate 1 includes a first main surface and a second main surface opposite to each other. The trench gate structure is disposed on the first main surface and extends through the source doped region 14, the bulk doped region 13, and the carrier storage doped region 12 into the substrate 11. The trench gate structure includes a trench extending below the bulk doped region 13, a gate dielectric layer 15 located on the sidewall of the trench, and a polysilicon layer 16 filling the trench. The source doped region 14 is disposed within the bulk doped region 13 and is located on the side of the trench gate structure. The carrier storage doped region 12 is disposed below the bulk doped region 13.

[0059] The substrate 11 may be a single-crystal silicon substrate. In some embodiments, the substrate 11 may also be made of other materials, such as, but not limited to, silicon-germanium or germanium. In other embodiments, the substrate 11 may also be a substrate comprising other elemental semiconductors or compound semiconductors, such as gallium arsenide, indium phosphide, or silicon carbide. The doping concentration and thickness of the substrate 11 may be set according to the voltage withstand capability and other performance characteristics of the IGBT device.

[0060] In this embodiment, the IGBT device is based on an N-type substrate, wherein the substrate 11 is N-type doped, the carrier storage doped region 12 is N-type doped, the bulk doped region 13 is P-type doped, and the source doped region 14 is N-type doped.

[0061] As an example, the insulating layer 2 can be borosilicate glass. In other embodiments, the insulating layer 2 can also be borosilicate glass, phosphosilicate glass, silicon oxide, etc., and is not limited thereto.

[0062] like Figure 3 As shown, then step 2) is performed to etch the insulating layer 2 and the substrate 1 to form a plurality of contact hole grooves 3.

[0063] As an example, the method for forming the contact hole groove 3 includes: firstly coating a photoresist layer (not shown) on the surface of the insulating layer 2, then exposing and developing the photoresist layer to form a photoresist pattern, and then using the photoresist pattern as a mask to etch the insulating layer 2 and the substrate 1 using a dry etching process to form the contact hole groove 3.

[0064] As an example, the insulating layer 2, the source doped region 14, and the body doped region 13 are etched to form a plurality of contact hole trenches 3. Specifically, the contact hole trenches 3 penetrate the insulating layer 2 and the source doped region 14 into the body doped region 13.

[0065] like Figure 4 As shown, step 3) is then performed, where contact metal 4 is formed on the side and bottom of the contact hole groove 3 and on the surface of the insulating layer 2, and each of the contact hole grooves 3 is connected to the contact metal 4.

[0066] As an example, such as Figure 4a The diagram shows an enlarged view of the contact metal 4 in the contact groove 3 and on the surface of the insulating layer 2. The method for forming the contact metal 4 includes at least: forming an adhesion layer 41 on the sidewalls and bottom of the contact groove 3 and on the surface of the insulating layer 2; forming a barrier layer 42 on the surface of the adhesion layer 41; and forming a contact metal layer 43 on the surface of the barrier layer 42. The adhesion layer 41 covers the sidewalls and bottom of the contact groove 3 and the insulating layer 2 outside the contact groove 3, exhibiting good adhesion to the sidewalls and bottom of the contact groove 3. The barrier layer 42 covers the sidewalls and bottom of the contact groove 3 and the adhesion layer 41 outside the contact groove 3, exhibiting good adhesion to the contact metal layer 43 while preventing the contact metal layer 43 from diffusing into the sidewalls and bottom of the contact groove 3. The contact metal layer 43 fills the contact groove 3 and the barrier layer 42 outside the contact groove 3.

[0067] As an example, the material of the adhesion layer 41 includes Ti, the material of the barrier layer 42 includes TiN, and the material of the metal contact layer 43 includes W. In this embodiment, the Ti adhesion layer 41 can be formed first using physical vapor deposition, then the TiN barrier layer 42 can be formed using chemical vapor deposition, and finally the W contact metal layer 43 can be formed using chemical vapor deposition.

[0068] like Figure 5 As shown, step 4) is then performed to form a front metal layer 5 on the contact metal surface 4.

[0069] As an example, the front metal layer 5 can be formed by depositing on the surface of the contact metal 4 using a sputtering process.

[0070] As an example, the thickness of the front metal layer 5 is between 3 μm and 6 μm. In one specific embodiment, the thickness of the front metal layer 5 is 4 μm. In another specific embodiment, the thickness of the front metal layer 5 is 5 μm.

[0071] Specifically, the front metal layer 5 is connected to the source doped region 14 and the bulk doped region 43 through the contact metal 4 in the contact hole groove 3.

[0072] As an example, the material of the front metal layer 5 includes one or a combination of AlCu or AlSiCu. In this embodiment, the material of the front metal layer 5 is AlCu.

[0073] The contact slots 3 are filled with the contact metal 5, and the contact slots 3 are connected to each other by contact metal 4. This increases the contact area between the contact metal 4 and the front metal layer 5, reduces the contact resistance, and thus reduces the on-state voltage drop of the IGBT. In addition, the connection between the contact slots 3 and the front metal layer 5 via the contact metal 4 results in better consistency of the inter-hole current during IGBT operation.

[0074] Since the substrate 1 has a contact metal 4 and a front metal layer 5 formed on its surface, the metal thickness on the substrate 1 surface is the sum of the thicknesses of the contact metal 4 and the front metal layer 5. Compared to conventional IGBT devices, the IGBT device of this invention has a thicker front metal layer. The temperature rise of an IGBT device during operation is mainly caused by channel temperature rise. Since the front metal layer is closer to the channel than the back metal layer, a large amount of heat will be dissipated from the front of the IGBT through the front metal layer and bonding wires. Therefore, a thicker front metal layer is more conducive to heat dissipation during IGBT device operation, thereby reducing the IGBT junction temperature and increasing the IGBT lifespan. This invention has a thicker front metal layer, resulting in better heat dissipation, lower junction temperature, and a longer lifespan.

[0075] like Figure 6 and Figure 7 As shown, step 5) is then performed, whereby the front metal layer 5 is etched to form a front metal layer pattern 6. Using the metal layer pattern 6 as a mask, a portion of the contact metal 4 is etched away.

[0076] The method for forming the front metal layer pattern 6 includes: firstly, coating a photoresist layer on the surface of the front metal layer 5; then, exposing and developing the photoresist layer to form a photoresist pattern; then, using the photoresist pattern as a mask, etching the front metal layer 5 using a dry etching process to form the front metal layer pattern 6; and finally, removing the photoresist layer.

[0077] In this step, the front metal layer pattern 6 is directly used as the etching mask for the contact metal 4. This is a non-adhesive etching process, which can be etched using conventional contact metal back-etching equipment. That is, contact metal etching can be performed using back-etching equipment without the need for additional contact metal etching equipment, and it is well compatible with current IGBT processes.

[0078] As an example, such as Figure 7 As shown, the manufacturing method further includes sequentially forming a hydrogen ion doped region 7, a collector region 8, and a back metal 9 on the second main surface.

[0079] As an example, the hydrogen ion doping region 7 comprises multiple hydrogen ion doping layers with different hydrogen ion doping concentrations, wherein the hydrogen ion doping concentration of the multiple hydrogen ion doping layers gradually decreases from the second main surface towards the first main surface. The hydrogen ion implantation dose contained in the hydrogen ion doping region 7 is between 5e11 and 5e16 cm⁻¹. -2 The hydrogen ion implantation energy is between 200 keV and 1.5 MeV. Specifically, the hydrogen ion doped region 7 has one to four hydrogen ion doped layers with different hydrogen ion doping concentrations. In this embodiment, by adjusting the dose and energy of each hydrogen ion implantation, a hydrogen ion doped layer with multiple different doping peaks can be formed in the substrate 11 after annealing. For example, in this embodiment, the hydrogen ion doped region 7 has four different doping peaks 141, 142, 143, and 144.

[0080] As an example, the collector region 8 may be a conductive doped ion, for example, boron or a boron compound.

[0081] As an example, the back metal 9 can be an Al / Ti / Ni / Ag metal stack.

[0082] Example 2

[0083] like Figure 7 As shown, this embodiment provides an IGBT structure, which includes at least: a substrate 1 with an insulating layer 2 formed on its surface; a plurality of contact hole grooves 3 formed in the insulating layer 2 and the substrate 1; contact metal 4 formed on the side and bottom of the contact hole grooves and on the surface of the insulating layer 2, wherein the contact metal 4 in each of the contact hole grooves 3 is connected; and a front metal layer pattern 6 formed on the surface of the contact metal 4.

[0084] As an example, the substrate 1 includes at least a substrate 11, a carrier storage doped region 12, a bulk doped region 13, a source doped region 14, and a trench gate structure. The substrate 11 includes a first main surface and a second main surface opposite to each other. The trench gate structure is disposed on the first main surface and extends through the source doped region 14, the bulk doped region 13, and the carrier storage doped region 12 into the substrate 11. The trench gate structure includes a trench extending below the bulk doped region 13, a gate dielectric layer 15 located on the sidewall of the trench, and a polysilicon layer 16 filling the trench. The source doped region 14 is disposed within the bulk doped region 13 and located on the side of the trench gate structure. The carrier storage doped region 12 is disposed below the bulk doped region 13.

[0085] The substrate 11 may be a single-crystal silicon substrate. In some embodiments, the substrate 11 may also be made of other materials, such as, but not limited to, silicon-germanium or germanium. In other embodiments, the substrate 11 may also be a substrate comprising other elemental semiconductors or compound semiconductors, such as gallium arsenide, indium phosphide, or silicon carbide. The doping concentration and thickness of the substrate 11 may be set according to the voltage withstand capability and other performance characteristics of the IGBT device.

[0086] In this embodiment, the IGBT device is based on an N-type substrate, wherein the substrate 11 is N-type doped, the carrier storage doped region 12 is N-type doped, the bulk doped region 13 is P-type doped, and the source doped region 14 is N-type doped.

[0087] As an example, the insulating layer 2 can be borosilicate glass. In other embodiments, the insulating layer 2 can also be borosilicate glass, phosphosilicate glass, silicon oxide, etc., and is not limited thereto.

[0088] As an example, a plurality of contact hole grooves 3 are formed in the insulating layer 2, the source doped region 14, and the body doped region 13. Specifically, the contact hole grooves 3 penetrate the insulating layer 2 and the source doped region 14 into the body doped region 13.

[0089] As an example, such as Figure 4a As shown, the contact metal 4 includes: an adhesion layer 41 formed on the side and bottom of the contact hole groove 3 and on the surface of the insulating layer 2; a barrier layer 42 formed on the surface of the adhesion layer 41; and a contact metal layer 43 formed on the surface of the barrier layer 42.

[0090] The adhesive layer 41 covers the sidewalls and bottom of the contact hole 3 groove and the insulating layer 2 outside the contact hole 3 groove, and has good adhesion to the sidewalls and bottom of the contact hole 3 groove. The barrier layer 42 covers the sidewalls and bottom of the contact hole 3 groove and the adhesive layer 41 outside the contact hole 3 groove. On the one hand, it has good adhesion to the contact metal layer 43, and on the other hand, it can prevent the contact metal layer 43 from diffusing into the sidewalls and bottom of the contact hole 3 groove. The contact metal layer 43 fills the contact hole 3 groove and the barrier layer 42 outside the contact hole 3 groove.

[0091] As an example, the material of the adhesion layer 41 includes Ti, the material of the barrier layer 42 includes TiN, and the material of the metal contact layer 43 includes W.

[0092] As an example, the thickness of the front metal layer pattern 6 is between 3 μm and 6 μm. In one specific embodiment, the thickness of the front metal layer pattern 6 is 4 μm. In another specific embodiment, the thickness of the front metal layer pattern 6 is 5 μm.

[0093] Specifically, the front metal layer pattern 6 is connected to the source doped region 14 and the bulk doped region 13 through the contact metal 4 in the contact hole groove 3.

[0094] As an example, the front metal layer Figure 6 The material of the case includes one or a combination of AlCu or AlSiCu. In this case, the material of the front metal layer pattern 6 is AlCu.

[0095] As an example, the IGBT structure further includes a hydrogen ion doped region 7, a collector region 8, and a back metal 9 sequentially formed on the second main surface.

[0096] As an example, the hydrogen ion doping region 7 comprises multiple hydrogen ion doping layers with different hydrogen ion doping concentrations, wherein the hydrogen ion doping concentration of the multiple hydrogen ion doping layers gradually decreases from the second main surface towards the first main surface. The hydrogen ion implantation dose contained in the hydrogen ion doping region 7 is between 5e11 and 5e16 cm⁻¹. -2 The hydrogen ion implantation energy is between 200 keV and 1.5 MeV. Specifically, the hydrogen ion doped region 7 has one to four hydrogen ion doped layers with different hydrogen ion doping concentrations. In this embodiment, by adjusting the dose and energy of each hydrogen ion implantation, a hydrogen ion doped layer with multiple different doping peaks can be formed in the substrate 11 after annealing. For example, in this embodiment, the hydrogen ion doped region 7 has four different doping peaks 141, 142, 143, and 144.

[0097] As an example, the collector region 8 may be a conductive doped ion, for example, boron or a boron compound.

[0098] As an example, the back metal 9 can be an Al / Ti / Ni / Ag metal stack.

[0099] In view of the above, the contact slots 3 are filled with the contact metal 4, and the contact slots 3 are connected to each other by the contact metal 4. This increases the contact area between the contact metal 4 and the front metal layer pattern 6, reduces the contact resistance, and thus reduces the on-state voltage drop of the IGBT. In addition, the connection between the contact slots 3 and the front metal layer pattern 6 through the contact metal 4 results in better consistency of the inter-hole current during IGBT operation.

[0100] Because the substrate 1 has a contact metal 4 and a front metal layer pattern 6 formed on its surface, the metal thickness on the substrate 1 surface is the sum of the thicknesses of the contact metal 4 and the front metal layer pattern 6. Compared to conventional IGBT devices, the IGBT device of this invention has a thicker front metal layer. The temperature rise during IGBT device operation is mainly caused by channel temperature rise. Since the front metal layer is closer to the channel than the back metal layer, a large amount of heat will be dissipated from the front of the IGBT through the front metal layer and bonding wires. Therefore, a thicker front metal layer is more conducive to heat dissipation during IGBT device operation, thereby reducing the IGBT junction temperature and increasing the IGBT lifespan. This invention has a thicker front metal layer, resulting in better heat dissipation, lower junction temperature, and a longer lifespan.

[0101] In summary, this invention provides a manufacturing method and structure for an IGBT device. The method includes at least the following steps: first, providing a substrate and forming an insulating layer on the surface of the substrate; then, etching the insulating layer and the substrate to form a plurality of contact hole grooves; next, forming contact metal on the sides and bottom of the contact hole grooves and on the surface of the insulating layer, with the contact metals in each of the contact hole grooves connected together; next, forming a front metal layer on the surface of the contact metal; and finally, etching the front metal layer to form a front metal layer pattern, using the metal layer pattern as a mask to etch away a portion of the contact metal. This invention does not require additional contact metal etching equipment, is well compatible with current IGBT processes, and allows the contact metal to have a larger contact area with the front metal layer, thereby reducing the contact resistance between the contact metal and the front metal layer, and thus reducing the on-state voltage drop of the IGBT. The IGBT structure of this invention has a thicker metal surface. The thicker the metal, the greater the metal heat capacity, which is beneficial for heat dissipation during device operation, reducing the IGBT junction temperature and improving the IGBT's lifespan.

[0102] Therefore, this invention effectively overcomes the various shortcomings of the prior art and has high industrial application value.

[0103] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A method of manufacturing an IGBT device, characterized by, The manufacturing method comprises at least: 1) providing a substrate, forming an insulating layer on the surface of the substrate; 2) etching the insulating layer and the substrate to form a plurality of contact hole trenches; 3) forming a contact metal on the side and bottom of the contact hole trench and the surface of the insulating layer, the contact metal in each of the contact hole trenches being connected; 4) forming a front metal layer on the surface of the contact metal, the thickness of the front metal layer being between 3 μm and 6 μm; 5) etching the front metal layer to form a front metal layer pattern, using the front metal layer pattern as a mask to etch and remove part of the contact metal, and using the etched and removed part of the contact metal as a mask to etch and remove part of the contact metal by non-adhesive etching, wherein the forming of the front metal layer pattern comprises: applying a photoresist layer on the surface of the front metal layer, exposing and developing the photoresist layer to form a photoresist pattern, using the photoresist pattern as a mask to etch the front metal layer by dry etching to form the front metal layer pattern, and removing the photoresist layer. In step 1), the substrate comprises at least a substrate, a carrier storage doped region, a body doped region, a source doped region, and a trench gate structure, the substrate comprising opposite first and second main surfaces, the trench gate structure being arranged on the first main surface and penetrating through the source doped region, the body doped region, and the carrier storage doped region into the substrate, the source doped region being arranged in the body doped region and located on the side of the trench gate structure, and the carrier storage doped region being arranged below the body doped region.

2. The method of manufacturing an IGBT device according to claim 1, characterized by: In step 2), the insulating layer, the source doped region, and the body doped region are etched to form a plurality of contact hole trenches.

3. The method of manufacturing an IGBT device according to claim 2, wherein: In step 3), the method for forming the contact metal comprises at least:

4. The method of manufacturing an IGBT device according to claim 1, characterized by: forming an adhesion layer on the side and bottom of the contact hole trench and the surface of the insulating layer; forming a barrier layer on the surface of the adhesion layer; forming a contact metal layer on the surface of the barrier layer. The material of the front metal layer comprises one or a combination of AlCu or AlSiCu.

5. The method of manufacturing an IGBT device according to claim 1, wherein: The structure is prepared by any one of the methods in claims 1-5, and the structure comprises at least:

6. An IGBT structure, characterized by, a substrate, the surface of which is formed with an insulating layer; a plurality of contact hole trenches formed in the insulating layer and the substrate; a contact metal formed on the side and bottom of the contact hole trench and the surface of the insulating layer, the contact metal in each of the contact hole trenches being connected; a front metal layer pattern formed on the surface of the contact metal, the thickness of the front metal layer pattern being between 3 μm and 6 μm. The substrate comprises at least a substrate, a carrier storage doped region, a body doped region, a source doped region, and a trench gate structure, the substrate comprising opposite first and second main surfaces, the trench gate structure being arranged on the first main surface and penetrating through the source doped region, the body doped region, and the carrier storage doped region into the substrate, the source doped region being arranged in the body doped region and located on the side of the trench gate structure, and the carrier storage doped region being arranged below the body doped region. A plurality of contact hole trenches are formed in the insulating layer, the source doped region, and the body doped region.

7. The IGBT structure of claim 6, wherein: The contact metal comprises:

8. The IGBT structure of claim 7, wherein: ​ 9. The IGBT structure of claim 6, wherein: ​ An adhesion layer is formed on the side and bottom of the contact hole and the surface of the insulating layer; A barrier layer is formed on the surface of the adhesion layer; A contact metal layer is formed on the surface of the barrier layer.

10. The IGBT structure of claim 6, wherein: The material of the front metal layer pattern includes one or a combination of both of AlCu or AlSiCu.

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