Substrate processing apparatus, substrate processing method, and computer-readable storage medium

Abstract

This disclosure relates to a substrate processing apparatus, a substrate processing method, and a computer-readable storage medium, which can improve the in-plane uniformity of etching processes. The substrate processing apparatus includes a support portion, a base member, a rotating portion, a gas supply portion, and a gas rectifying portion. The gas rectifying portion includes: a rod-shaped member having a top end portion opposite to the lower surface of the substrate; and a rectifying member configured to surround the top end portion. The top end portion includes a folded portion provided on its outer peripheral surface, protruding outward from the outer peripheral surface of the top end portion and extending downward. The rectifying member includes: a bottom wall portion configured such that its inner peripheral edge is separated from the outer peripheral surface of the top end portion; a protrusion extending upward from the inner peripheral portion of the bottom wall portion such that the top end portion is located between the folded portion and the outer peripheral surface of the top end portion; a horizontal rectifying portion extending horizontally in a state separated from the bottom wall portion; and a plurality of pillar portions connecting the horizontal rectifying portion and the bottom wall portion.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus, a substrate processing method, and a computer-readable storage medium. Background Technology

[0002] Patent Document 1 discloses a substrate processing apparatus that performs washing and drying processes on the lower surface of a substrate while rotating a substrate held in a substrate holding unit about a vertical axis. The apparatus includes: a base member disposed opposite to the lower surface of the substrate held in the substrate holding unit; a gas outlet that ejects gas into the space between the base member and the lower surface of the substrate; and a blocking member disposed above the gas outlet.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 10-135178 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure describes a substrate processing apparatus, a substrate processing method, and a computer-readable storage medium that can improve the in-plane uniformity of etching processes.

[0008] Solution for solving the problem

[0009] An example of a substrate processing apparatus includes: a support portion configured to support a substrate; a base member having a through hole and configured to be separated from and opposite to the lower surface of the substrate supported by the support portion; a rotating portion configured to rotate the base member and the support portion; a chemical solution supply portion configured to supply etching solution to the upper surface of the substrate supported by the support portion; a gas supply portion; and a gas rectification portion configured to rectify the gas supplied from the gas supply portion and discharge the rectified gas into the space between the lower surface of the substrate supported by the support portion and the base member. The gas rectification portion includes: a rod-shaped member extending in a vertical direction, including a top end portion disposed within the through hole opposite to the lower surface of the substrate supported by the support portion; and an annular rectification member disposed to surround the top end portion. The top portion includes an annular fold-back portion that extends downward from the outer periphery of the top portion. The rectifying member includes: an annular bottom wall portion configured such that its inner periphery is separated from the outer periphery of the top portion; an annular protrusion extending upward from the inner periphery of the bottom wall portion with its upper end located between the fold-back portion and the outer periphery of the top portion; an annular horizontal rectifying portion extending horizontally, separated from the bottom wall portion, at a position further outward than the fold-back portion and above the bottom wall portion; and a plurality of pillars connecting the horizontal rectifying portion and the bottom wall portion, arranged circumferentially along the top portion.

[0010] For the above-mentioned substrate processing apparatus, the horizontal separation distance between the folding section and the horizontal rectifier section may be 2mm to 10mm.

[0011] Alternatively, the rectifier may further include an annular cover portion disposed between the fold-back portion and the horizontal rectifier portion.

[0012] Alternatively, the through hole may be located in the central part of the base member, and the outer periphery of the bottom wall may be connected to the through hole.

[0013] Alternatively, when viewed from the direction of the rotation axis of the rectifier member, the plurality of pillars may extend obliquely relative to both the circumferential and radial directions of the rotation axis.

[0014] Alternatively, the substrate processing apparatus described above may also include a control unit, wherein the chemical solution supply unit comprises: a nozzle configured to eject the etching solution; and a drive unit configured to move the nozzle horizontally above the substrate supported by the support unit. The control unit is configured to control the drive unit and the gas supply unit to perform the following process: adjusting the gas supply amount from the gas supply unit according to the ejection position of the etching solution ejected onto the substrate, such that the gas supply amount to the gas rectifier when the etching solution is ejected from the nozzle onto the center of the substrate is less than the gas supply amount to the gas rectifier when the etching solution is ejected from the nozzle onto the outer periphery of the substrate.

[0015] In the above-described substrate processing apparatus, the radius of the central portion from the center of the substrate may be in the range of 60 mm to 90 mm.

[0016] Alternatively, the control unit may be configured to control the drive unit to perform the following process: reciprocating the nozzle to supply the etching solution between the center of the substrate and the periphery of the substrate.

[0017] In the above-described substrate processing apparatus, the control unit may be configured to control the drive unit to perform the following process: making the moving speed of the nozzle when spraying the etching solution from the nozzle toward the center of the substrate 150 mm / sec or less.

[0018] In the above-described substrate processing apparatus, the control unit may be configured to control the gas supply unit to perform the following process: adjusting the amount of gas supplied to the gas rectifier unit according to the rotational speed of the substrate.

[0019] The effects of the invention

[0020] By utilizing the substrate processing apparatus, substrate processing method, and computer-readable storage medium disclosed herein, the in-plane uniformity of the etching process can be improved. Attached Figure Description

[0021] Figure 1 This is a schematic diagram illustrating an example of a substrate processing apparatus.

[0022] Figure 2 This is a magnified cross-sectional view showing a nearby example of a gas rectifier section.

[0023] Figure 3 This is an example of a rectifier component along... Figure 2 A sectional view shown by sectioning along line III-III.

[0024] Figure 4 This is a block diagram showing an example of the main parts of a substrate processing apparatus.

[0025] Figure 5 This is a schematic diagram illustrating an example of the hardware structure of a controller.

[0026] Figure 6 This is a flowchart illustrating an example of substrate processing.

[0027] Figure 7 It is a cross-sectional view showing other examples of rectifier components cut along a horizontal plane.

[0028] Figure 8 This is a magnified cross-sectional view showing the vicinity of other examples of the gas rectifier section. Detailed Implementation

[0029] In the following description, the same reference numerals are used to denote the same elements or elements with the same function, and repeated descriptions are omitted. Furthermore, when referring to the top, bottom, left, and right of the figures in this specification, the direction of the reference numerals in the figures shall be used as the reference numerals.

[0030] [Substrate Processing Apparatus]

[0031] First, refer to Figures 1-3 The structure of one example of the substrate processing apparatus 1 will be described. For example, the substrate processing apparatus 1 is configured to etch a film F formed on the upper surface Wa of the substrate W by supplying a processing liquid L to the upper surface Wa of the substrate W. The film F may also be composed of a metal film such as titanium nitride, titanium oxide, titanium, tungsten, tantalum, tantalum nitride, aluminum, aluminum oxide, copper, ruthenium, zirconium oxide, hafnium oxide, etc.

[0032] The substrate W can be circular or non-circular, such as polygonal. The substrate W may also have a notch created by partial removal. For example, the notch can be a slot (U-shaped, V-shaped, etc.) or a straight section extending in a straight line (a so-called positioning plane). For example, the substrate W can be a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, and various other substrates. The diameter of the substrate W can be, for example, approximately 200 mm to 450 mm.

[0033] like Figure 1 As shown, the substrate processing apparatus 1 includes: a rotation holding unit 10, a gas rectification unit 20, a chemical solution supply unit 30, a rinsing liquid supply unit 40, a gas supply unit 50, and a controller Ctr (control unit).

[0034] The rotating holding part 10 includes a rotating shaft 11 (rotating part), a drive mechanism 12 (rotating part), a base member 13, a plurality of support pins 14 (support parts), and a plurality of holding mechanisms 15 (support parts). The rotating shaft 11 is a hollow tubular member extending in the vertical direction. The rotating shaft 11 is configured to rotate about a central axis Ax. The drive mechanism 12 is connected to the rotating shaft 11. The drive mechanism 12 is configured to operate based on an operating signal from a controller Ctr, thereby rotating the rotating shaft 11. For example, the drive mechanism 12 may also be a power source such as an electric motor.

[0035] For example, the base member 13 is a ring-shaped flat plate that extends horizontally. That is, a through hole 13a is formed in the center of the base member 13. The inner periphery of the base member 13 is connected to the top end of the rotation shaft 11. Therefore, the base member 13 is configured to rotate about the central axis Ax of the rotation shaft 11 as the rotation shaft 11 rotates.

[0036] Multiple support pins 14 are provided on the base member 13, protruding upward from the upper surface of the base member 13. The number of support pins 14 can be, for example, about 3 to 6. The multiple support pins 14 are configured to support the substrate W in a substantially horizontal position by abutting their top ends against the lower surface Wb of the substrate W. For example, the multiple support pins 14 can be cylindrical or frustum-shaped. The multiple support pins 14 can also be arranged at approximately equal intervals near the outer periphery of the base member 13, so that they appear as a circle when viewed from above.

[0037] Multiple gripping mechanisms 15 are provided on the base member 13 in a manner that protrudes upward from the base member 13. For example, the number of multiple gripping mechanisms 15 may be about three. The multiple gripping mechanisms 15 are so-called mechanical chucks, configured to grip the periphery of the substrate W. The multiple gripping mechanisms 15 may also be arranged at approximately equal intervals near the outer periphery of the base member 13, in a manner that forms a circular shape when viewed from above.

[0038] With the substrate W supported by the support pin 14 and the holding mechanism 15, the substrate W separates from the base member 13 and is held above the base member 13. That is, with the substrate W supported by the support pin 14 and the holding mechanism 15, the lower surface Wb of the substrate W is opposite to the base member 13.

[0039] Furthermore, as described above, a plurality of support pins 14 and a plurality of holding mechanisms 15 are provided on the base member 13, which is connected to the rotation shaft 11. Therefore, when the drive mechanism 12 drives the rotation shaft 11 to rotate, the base member 13, the plurality of support pins 14, and the plurality of holding mechanisms 15 rotate. Therefore, if the drive mechanism 12 drives the rotation shaft 11 to rotate while the substrate W is supported by the plurality of support pins 14 and held by the plurality of holding mechanisms 15, the substrate W also rotates together with the base member 13, etc.

[0040] The gas rectifier 20 is configured to rectify the gas supplied from the gas supply unit 50, and discharge the rectified gas into the space V between the lower surface Wb of the substrate W supported by the support pin 14 and the holding mechanism 15 and the base member 13. Figure 1 and Figure 2 As shown, the gas rectifier 20 includes a rod-shaped member 100 and a rectifier member 200.

[0041] The rod-shaped member 100 extends vertically within the rotating shaft 11 and the through hole 13a, separated from the rotating shaft 11 and the through hole 13a. Therefore, specifically as follows... Figure 2 As shown, a gap D is formed between the outer peripheral surface of the rod-shaped member 100 and the inner peripheral surface of the rotation shaft 11. For example, the rod-shaped member 100 can be cylindrical or cylindrical. When the rod-shaped member 100 is cylindrical, rinsing fluid, gas, etc. can be supplied from the rod-shaped member 100 toward the lower surface Wb of the substrate W.

[0042] The rod-shaped member 100 includes a top end portion 101, which is disposed within a through hole 13a and faces the lower surface Wb of the substrate W supported by the support pin 14 and the holding mechanism 15. The upper end of the top end portion 101 may also be located above the base member 13. A ring-shaped (e.g., circular) folded-back portion 102 is provided on the outer peripheral surface of the top end portion 101.

[0043] The folded-back portion 102 protrudes outward from the outer peripheral surface of the top portion 101 and then extends downward. Therefore, the cross-section of the folded-back portion 102 is approximately J-shaped. The combination of the top portion 101 and the folded-back portion 102 forms a bottomed, annular recess that is closed at the top and open downward.

[0044] The rectifier component 200 is generally annular (e.g., circular) and is configured to surround the top end 101. Figure 2 In this example, the rectifier 200 and the rod-shaped member 100 (top part 101) are set as independent. Figure 2 and Figure 3 As shown, the rectifier component 200 includes: a bottom wall portion 201, a protrusion 202, a horizontal rectifier portion 203, and a plurality of column portions 204.

[0045] The bottom wall portion 201 is a plate-like body extending horizontally, and is annular (e.g., circular) with a through hole in the center. The inner periphery of the bottom wall portion 201 separates from the outer periphery of the top end portion 101. The outer periphery of the bottom wall portion 201 is fitted into the through hole 13a of the base member 13. Therefore, the bottom wall portion 201 is disposed between the top end portion 101 and the base member 13.

[0046] The protrusion 202 is a cylindrical body extending upward from the inner periphery (near the inner periphery) of the bottom wall portion 201. Therefore, the protrusion 202 is annular (e.g., cylindrical). The top end (upper part) of the protrusion 202 is located within the space (with a bottom recess) between the outer peripheral surface of the top end portion 101 and the inner peripheral surface of the folded-back portion 102. Therefore, the top end portion 101, the folded-back portion 102, the bottom wall portion 201, and the protrusion 202 form a flow path FL communicating with the gap D. The flow path FL extends upward from the gap D (refer to...). Figure 2 Arrow Ar1), reversed approximately 180° and pointing downwards (see reference). Figure 2 Arrow Ar2), then changes its forward path approximately 90° toward the gap between the bottom wall 201 and the fold-back section 102 (refer to...). Figure 2 Arrow Ar3).

[0047] The horizontal rectifier 203 is a plate-like body extending horizontally above the bottom wall 201, separated from the bottom wall 201, and is annular (e.g., circular) with a through hole in the center. The horizontal rectifier 203 is located horizontally outside the return section 102. Therefore, an annular opening OP opening upwards is formed between the horizontal rectifier 203 and the return section 102. Thus, the gas discharged from the flow path FL (refer to...) Figure 2 A portion of the arrow Ar3 forms a vortex at the opening OP (see reference). Figure 2 (Ar4). The separation distance between the horizontal rectifier 203 and the return section 102 can be, for example, about 2mm to 10mm, or about 4mm to 8mm.

[0048] Multiple pillars 204 extend vertically (in the vertical direction) connecting the bottom wall portion 201 and the horizontal rectifier portion 203. The number of pillars 204 can be, for example, about 3 to 12. The multiple pillars 204 can be arranged circumferentially along the top end portion 101. In this case, multiple through holes 204a are formed by the bottom wall portion 201, the horizontal rectifier portion 203, and the multiple pillars 204. Gas discharged from the flow path FL (refer to...) Figure 2 The remaining portion (the portion that does not form a vortex) of arrow Ar3 exits horizontally through multiple through holes 204a into the space V between the lower surface Wb of the substrate W and the base member 13 (see reference). Figure 2 Arrow Ar5).

[0049] For example, the multiple pillars 204 can be prism-shaped, cylindrical, frustum-shaped, or have a central recess in the vertical direction. The multiple pillars 204 can also be arranged at approximately equal intervals near the outer periphery of the base member 13, so that the overall shape appears circular when viewed from above.

[0050] The chemical solution supply unit 30 is configured to supply etching solution L1 to the substrate W. The etching solution L1 may contain, for example, an alkaline or acidic chemical solution for removing the film F from the upper surface Wa of the substrate W. The alkaline chemical solution may contain, for example, SC-1 solution (a mixture of ammonium, hydrogen peroxide, and pure water). The acidic chemical solution may contain, for example, SC-2 solution (a mixture of hydrochloric acid, aqueous hydrogen peroxide solution, and pure water), SPM (a mixture of sulfuric acid and aqueous hydrogen peroxide solution), HF / HNO3 solution (a mixture of hydrofluoric acid and nitric acid), etc.

[0051] The chemical solution supply unit 30 includes: a liquid source 31, a pump 32, a valve 33, a nozzle 34, piping 35, and a drive source 36 (drive unit). The liquid source 31 is the supply source of the etching solution L1. The pump 32 is configured to operate based on the working signal of the self-controller Ctr, and delivers the etching solution L1 drawn from the liquid source 31 to the nozzle 34 via piping 35 and valve 33.

[0052] Valve 33 is configured to operate based on the operating signal of the self-controller Ctr, switching between an open state that allows fluid flow through piping 35 and a closed state that obstructs fluid flow through piping 35. Nozzle 34 is disposed above substrate W with its outlet facing the upper surface Wa of substrate W. Nozzle 34 is configured to spray etching solution L1 delivered by self-pump 32 from its outlet toward the upper surface Wa of substrate W.

[0053] Piping 35 connects sequentially from the upstream side to the liquid source 31, pump 32, valve 33, and nozzle 34. A drive source 36 is directly or indirectly connected to the nozzle 34. The drive source 36 is configured to operate based on a working signal from the controller Ctr, causing the nozzle 34 to move horizontally or vertically above the substrate W.

[0054] The rinsing fluid supply unit 40 is configured to supply rinsing fluid L2 to the substrate W. The rinsing fluid L2 is, for example, a liquid used to remove (rinse) the etching solution L1 supplied to the upper surface Wa of the substrate W, and dissolving components caused by the dissolution of the film F due to the etching solution L1. The rinsing fluid L2 may also contain, for example, deionized water (DIW), ozone water, carbonated water (CO2 water), ammonium water, etc.

[0055] The flushing fluid supply unit 40 includes: a fluid source 41, a pump 42, a valve 43, a nozzle 44, piping 45, and a drive source 46. The fluid source 41 is the supply source of the flushing fluid L2. The pump 42 is configured to operate based on an operating signal from the controller Ctr, and deliver the flushing fluid L2 drawn from the fluid source 41 to the nozzle 44 via piping 45 and valve 43.

[0056] Valve 43 is configured to operate based on an operating signal from controller Ctr, switching between an open state that allows fluid flow through piping 45 and a closed state that obstructs fluid flow through piping 45. Nozzle 44 is positioned above substrate W with its outlet facing the upper surface Wa of substrate W. Nozzle 44 is similarly configured to spray flushing fluid L2 delivered by pump 42 from its outlet toward the upper surface Wa of substrate W.

[0057] Piping 45 connects sequentially from the upstream side to a liquid source 41, a pump 42, a valve 43, and a nozzle 44. A drive source 46 is directly or indirectly connected to the nozzle 44. The drive source 46 is configured to operate based on a working signal from the controller Ctr, causing the nozzle 44 to move horizontally or vertically above the substrate W.

[0058] The gas supply unit 50 includes a gas source 51, a flow regulator 52, and a piping 53. The gas source 51 stores inert gases (such as nitrogen gas), dry air, etc., and functions as a gas supply source. The flow regulator 52 is provided in the piping 53 extending from the gas source 51 to the gap D. The flow regulator 52 is configured to operate based on an operating signal from the controller Ctr, thereby opening and closing the piping 53 and adjusting its opening degree.

[0059] like Figure 4 As shown, the controller Ctr has a reading unit M1, a storage unit M2, a processing unit M3, and an indication unit M4 as functional modules. These functional modules are only for the convenience of dividing the functions of the controller Ctr into multiple modules, and do not mean that the hardware constituting the controller Ctr must be divided into such modules. Each functional module is not limited to being implemented by program execution, but can also be implemented using dedicated circuits (such as logic circuits), or integrated circuits (ASICs) that integrate such dedicated circuits.

[0060] The reading unit M1 is configured to read programs from a computer-readable storage medium RM. The storage medium RM stores programs for operating various parts of the substrate processing apparatus 1. For example, the storage medium RM can be a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk. Furthermore, as described below, each part of the substrate processing apparatus 1 may include a rotation holding unit 10, a chemical solution supply unit 30, a rinsing liquid supply unit 40, and a gas supply unit 50, etc.

[0061] The storage unit M2 is configured to store various types of data. For example, the storage unit M2 can also store programs read from the storage medium RM by the reading unit M1, setting data input by the operator using an external input device (not shown), etc.

[0062] The processing unit M3 is configured to process various types of data. The processing unit M3 may also be configured, for example, to generate operating signals for operating various parts of the substrate processing apparatus 1 based on various types of data stored in the storage unit M2.

[0063] The indicator unit M4 is configured to send the working signal generated by the processing unit M3 to each part of the substrate processing apparatus 1.

[0064] The hardware of the controller Ctr can also consist of, for example, one or more control computers. Figure 5 As shown, as a hardware structure, the controller Ctr can include a circuit C1. Circuit C1 can also be composed of circuit elements. For example, circuit C1 can also include a processor C2, a memory C3, a storage device C4, a driver C5, and input / output ports C6.

[0065] The processor C2 can also be configured to execute programs in cooperation with at least one of the memory C3 and storage device C4, and to perform input / output of signals through the input / output port C6 to realize the aforementioned functional modules. The memory C3 and storage device C4 can also function as a storage unit M2. The driver C5 can also be a circuit configured to drive each part of the substrate processing device 1. The input / output port C6 can also be configured to transmit signal input / output between the driver C5 and each part of the substrate processing device 1.

[0066] The substrate processing apparatus 1 may have a single controller Ctr or a controller group (control unit) consisting of multiple controller Ctrs. When the substrate processing apparatus 1 has a controller group, each of the aforementioned functional modules may be implemented by a single controller Ctr or by a combination of two or more controller Ctrs. When the controller Ctr is composed of multiple computers (circuit C1), each of the aforementioned functional modules may be implemented by a single computer (circuit C1) or by a combination of two or more computers (circuit C1s). The controller Ctr may also have multiple processors C2. In this case, each of the aforementioned functional modules may be implemented by a single processor C2 or by a combination of two or more processors C2.

[0067] [Substrate Processing Method]

[0068] Next, refer to Figure 6 This describes a method (substrate processing method) for etching a film F formed on the upper surface Wa of a substrate W using a substrate processing apparatus 1.

[0069] First, the substrate W is placed on the support pin 14 using a transport mechanism (not shown). In this state, the controller Ctr controls the gripping mechanism 15, causing the gripping mechanism 15 to grip the periphery of the substrate W. Thus, the substrate W is supported by the support pin 14 and the gripping mechanism 15 (see reference). Figure 6 Step S11).

[0070] Next, the controller Ctr controls the drive mechanism 12 to rotate the rotating shaft 11 at a predetermined speed. At this time, the substrate also rotates together with the rotating shaft 11, the base member 13, the support pin 14, and the holding mechanism 15 (see reference). Figure 6 Step S12).

[0071] Next, the controller Ctr controls the chemical solution supply unit 30 to supply etching solution L1 toward the upper surface Wa of the rotating substrate W (see reference). Figure 6 Step S13). As a result, the etching solution L1 flows along the upper surface Wa toward the outer periphery of the substrate W due to centrifugal force, and then falls off from the outer periphery of the substrate W outward. As a result, the etching process of the film F formed on the upper surface Wa of the substrate W progresses.

[0072] When the etching solution L1 is supplied, the controller Ctr also controls the gas supply unit 50, thereby supplying gas from the gas rectifying unit 20 (rectifying member 200) to the space V between the lower surface Wb of the substrate W and the base member 13 through the gap D and the flow path FL. At this time, as Figure 2 As shown, when gas flows from gap D into flow path FL (refer to...) Figure 2 Arrow Ar1), reversed approximately 180° (refer to...) Figure 2Arrow Ar2), which then changes direction and flows at approximately 90° (refer to...) Figure 2 (Ar3). After this, a portion of the gas forms a vortex at the opening OP (see arrow Ar3). Figure 2 Arrow Ar4). On the other hand, another portion of the gas passes through multiple through holes 204a toward the space V between the lower surface Wb of the substrate W and the base member 13 and is discharged horizontally (see reference). Figure 2 Arrow Ar5), and flows to the outer periphery of substrate W.

[0073] Next, the controller Ctr controls the rinsing fluid supply unit 40 to supply rinsing fluid L2 toward the upper surface Wa of the rotating substrate W (see reference). Figure 6 Step S14). As a result, the rinsing fluid L2 flows along the upper surface Wa towards the outer periphery of the substrate W due to centrifugal force, and then falls outwards from the outer periphery of the substrate W. Consequently, the etchant L1 and the dissolved components of the film F are rinsed off from the upper surface Wa of the substrate W. At this time, the controller Ctr can also control the gas supply unit 50 to supply gas from the gas rectification unit 20 (rectification member 200) to the space V.

[0074] Next, the controller Ctr controls the drive mechanism 12 to maintain the rotation of the substrate W. As a result, the rinsing liquid L2 is thrown off the substrate W, thereby drying the substrate W (see reference). Figure 6 Step S15). Using the above steps, the processing of substrate W is completed. In addition, in order to suppress the occurrence of water spots, etc., an organic solvent (e.g., isopropanol, etc.) may be supplied to the upper surface Wa of substrate W after the rinsing liquid L2 is supplied to substrate W, and then substrate W is dried.

[0075] [effect]

[0076] Based on the above example, the other portion of the gas passes through multiple through holes 204a and is discharged horizontally toward the space V between the lower surface Wb of the substrate W and the base member 13 (see reference). Figure 2 (Ar5). That is, the other portion of the gas mentioned above, through multiple changes in direction, becomes more likely to flow primarily in the horizontal direction. Consequently, the gas is less likely to flow towards the lower surface Wb of the substrate W, thus making it difficult for the substrate W to be locally cooled by the gas. As a result, the in-plane uniformity of the etching process can be improved.

[0077] Based on the above example, a portion of the gas forms a vortex at the opening OP. Therefore, gas flows even in the space V between the lower surface Wb of the substrate W and the base member 13, above the rectifying member 200, thus supplying gas over a wide area of ​​the space V. Therefore, it is possible to improve the in-plane uniformity of the etching process while suppressing foreign matter adhesion to the lower surface Wb of the substrate W and preventing the etching solution from meandering towards the lower surface Wb of the substrate W.

[0078] Based on the above examples, the horizontal separation distance between the return section 102 and the horizontal rectifying section 203 can be set to approximately 2mm to 10mm. When the separation distance is 2mm or more, it becomes difficult for gas to be ejected upwards from the opening OP, and there is a tendency for gas vortices to easily form in the opening OP. When the separation distance is 10mm or less, it is difficult for the diameter of the gas vortex formed in the opening OP to expand, and the tendency for localized cooling of the substrate W caused by the vortex can be suppressed.

[0079] Based on the above example, the through hole 13a is provided in the central part of the base member 13, and the outer periphery of the bottom wall part 201 is connected to the through hole 13a. Therefore, the rectifier member 200 rotates together with the base member 13, the support pin 14, the holding mechanism 15, and the substrate W. That is, the rectifier member 200 becomes relatively stationary relative to the substrate W. Therefore, the gas blown from the gas rectifier 20 into the space V between the lower surface Wb of the substrate W and the base member 13 becomes easier to flow radially on the lower surface Wb of the substrate W. Therefore, it is possible to further suppress the adhesion of foreign matter to the lower surface Wb of the substrate W.

[0080] [Variation Example]

[0081] It should be considered that the contents disclosed in this specification are illustrative in all respects and not restrictive. Various omissions, substitutions, and modifications may be made to the above examples without departing from the scope and spirit of the claims.

[0082] (1) The through hole 13a may also be located at an eccentric position relative to the center of the base member 13.

[0083] (2) Alternatively, the outer periphery of the bottom wall portion 201 may not be connected to the through hole 13a, but the inner periphery of the bottom wall portion 201 may be connected to the rod-shaped member 100. That is, the rectifier member 200 may not rotate.

[0084] (3) Figure 7As shown, when viewed along the rotation axis of the self-rectifying member 200, the plurality of pillars 204 extend obliquely in both the circumferential and radial directions relative to the rotation axis. In this case, the gas is rectified by the plurality of pillars 204, making it easier for the gas to exit into the space V between the lower surface Wb of the substrate W and the base member 13. Therefore, it is possible to further suppress the adhesion of foreign matter to the lower surface Wb of the substrate W. Furthermore, as Figure 7 As shown in the example, the column 204 can be airfoil-shaped or flat. In other words, the rectifier 200 can be a structure similar to a multi-bladed fan or a structure similar to a turbofan.

[0085] (4) Figure 8 As shown, the rectifier 200 may also include an annular cover 205 disposed between the retraction section 102 and the horizontal rectifier 203. In this case, the size of the opening OP can be adjusted using the cover 205. That is, the diameter of the vortex formed in the opening OP can be adjusted. Furthermore, the cover 205 may be configured to be able to be installed and uninstalled relative to one of the retraction section 102 and the horizontal rectifier 203, or it may be configured to be fixed relative to one of the retraction section 102 and the horizontal rectifier 203.

[0086] (5) In Figure 6 In step S13, the gas supply unit 50 can be controlled by the controller Ctr to adjust the gas supply amount from the gas supply unit 50 according to the ejection position of the etchant L1 onto the substrate W. Specifically, the drive source 36 and the gas supply unit 50 can be controlled so that the gas supply amount from the gas supply unit 50 when the etchant L1 is ejected from the nozzle 34 to the center of the substrate W is less than the gas supply amount when the etchant L1 is ejected from the nozzle 34 to the outer periphery of the substrate W. In this case, the gas supply amount is relatively small when the center of the substrate W is etched, so the progress of the etching process is similar near the center and the outer periphery of the substrate W. Therefore, the in-plane uniformity of the etching process can be further improved. In addition, the radius of the "center" of the substrate W from the center of the substrate W can be, for example, in the range of 60 mm to 90 mm.

[0087] (6) In Figure 6 In step S13, the chemical solution supply unit 30 can be controlled by the controller Ctr to reciprocate the nozzle 34 while supplying the etching solution L1 between the center of the substrate W and the periphery of the substrate. In this case, the etching solution L1 can be easily supplied uniformly to the entire substrate. Therefore, the in-plane uniformity of the etching process can be improved.

[0088] (7) In Figure 6In step S13, the movement speed of the nozzle 34 when ejecting the etching solution L1 from the nozzle 34 to the center of the substrate W can be set to 150 mm / sec or less by controlling the chemical solution supply unit 30 with the controller Ctr. In this case, compared with a general processing procedure, the movement speed of the nozzle 34 when etching the center of the substrate W is relatively small, so the center of the substrate W is etched for a longer time. Therefore, the progress of the etching process is similar near the center and at the outer periphery of the substrate W. Therefore, the in-plane uniformity of the etching process can be further improved.

[0089] (8) In Figure 6 In step S13, the gas supply unit 50 can be controlled by the controller Ctr to adjust the gas supply amount to the gas rectifier 20 according to the rotational speed of the substrate W. In this case, it is set such that, for example, the lower the rotational speed of the substrate W, the smaller the gas supply amount to the gas rectifier 20. When the rotational speed of the substrate W is low, the negative pressure generated in the space V between the lower surface Wb of the substrate W and the base member 13 becomes smaller, and foreign objects are difficult to be drawn into the space V. Therefore, even if the gas supply amount to the gas rectifier 20 is small, there is a tendency to suppress the adhesion of foreign objects to the lower surface Wb of the substrate W. Moreover, when the gas supply amount to the gas rectifier 20 is small, the substrate W is difficult to be cooled by the gas. Therefore, there is also a tendency to improve the in-plane uniformity of the etching process. For example, when the rotational speed of the substrate W is about 250 rpm, the gas supply amount to the gas rectifier 20 can be about 20 m / min. When the rotational speed of the substrate W is around 1000 rpm, the gas supply rate to the gas rectifier section 20 can also be around 40 m / min. That is, the rotational speed of the substrate W and the gas supply rate can have an exponential functional relationship.

[0090] [Other examples]

[0091] Example 1. An example of a substrate processing apparatus includes: a support portion configured to support a substrate on which a film is formed on its upper surface; a base member having a through hole and configured to be separate from and opposite to the lower surface of the substrate supported by the support portion; a rotating portion configured to rotate the base member and the support portion; a chemical solution supply portion configured to supply etching solution to the upper surface of the substrate supported by the support portion; a gas supply portion; and a gas rectification portion configured to rectify the gas supplied from the gas supply portion and discharge the rectified gas into the space between the lower surface of the substrate supported by the support portion and the base member. The gas rectification portion includes: a rod-shaped member extending in a vertical direction, including a top end portion disposed within the through hole opposite to the lower surface of the substrate supported by the support portion; and an annular rectification member disposed to surround the top end portion. The top portion includes an annular fold-back portion that extends downward from the outer periphery of the top portion. The rectifying member includes: an annular bottom wall portion configured such that its inner periphery is separated from the outer periphery of the top portion; an annular protrusion extending upward from the inner periphery of the bottom wall portion with its upper end located between the fold-back portion and the outer periphery of the top portion; an annular horizontal rectifying portion extending horizontally, separated from the bottom wall portion, at a position further outward than the fold-back portion and above the bottom wall portion; and a plurality of pillars connecting the horizontal rectifying portion and the bottom wall portion, arranged circumferentially along the top portion.

[0092] Furthermore, during etching, sometimes gas is supplied to the space between the lower surface of the substrate and the base member to suppress foreign matter from adhering to the lower surface of the substrate, allowing the etching solution to detour from the periphery of the substrate and adhere to the lower surface. In this case, without the aforementioned rectifying member, supplying gas to the space between the lower surface of the substrate and the base member can result in airflow deviation on the lower surface of the substrate due to factors such as the precision of the machining of the apparatus. It is conceivable that in this state, when the etching solution is supplied to the upper surface of the substrate to etch the film on the upper surface, the chemical reaction of the etching solution will also be deflected, affecting the uniformity of the etched film thickness within the substrate surface.

[0093] However, in Example 1, the gas supplied from the gas supply section to the gas rectifier changes direction after passing through the gap between the outer peripheral surface of the top portion and the protrusion, passes through the gap between the protrusion and the return portion, and then changes direction again to a horizontal direction. Therefore, a portion of the gas whose direction has changed to a horizontal direction is discharged into the space between the lower surface of the substrate and the base member after passing through the gap between the horizontal rectifier and the bottom wall portion. Thus, by causing the gas discharged from the gas rectifier to change direction multiple times, it becomes easier for it to flow primarily in the horizontal direction. Consequently, the gas is less likely to flow towards the lower surface of the substrate, and therefore, the substrate becomes less susceptible to localized cooling by the gas. As a result, the in-plane uniformity of the etching process can be improved.

[0094] Furthermore, in Example 1, the horizontal rectifier is located further outward than the return section. Therefore, the gas rectifier has an annular opening that opens upward between the horizontal rectifier and the return section. Consequently, a portion of the gas whose direction changes to the horizontal forms a vortex at this opening. Thus, gas flows even in the space between the lower surface of the substrate and the base member, specifically in the portion above the rectifier member, thereby supplying gas to a wide area of ​​that space. Therefore, it is possible to improve the in-plane uniformity of the etching process while suppressing foreign matter adhesion to the lower surface of the substrate and preventing the etching solution from meandering towards the lower surface of the substrate.

[0095] Example 2. According to the substrate processing apparatus of Example 1, the horizontal separation distance between the folding section and the horizontal rectification section may be 2 mm to 10 mm. When the separation distance is 2 mm or more, it becomes difficult for gas to be ejected upward from the opening of the gas rectification section, and there is a tendency for gas vortices to easily form at the opening of the gas rectification section. When the separation distance is 10 mm or less, it is difficult for the diameter of the gas vortex formed at the opening of the gas rectification section to expand, and the tendency for localized cooling of the substrate caused by the vortex can be suppressed.

[0096] Example 3. According to the substrate processing apparatus of Example 1 or Example 2, the rectifying member may further include an annular cover portion, which is disposed in one of the reversing portion and the horizontal rectifying portion in a manner located between the reversing portion and the horizontal rectifying portion. In this case, the size of the opening of the gas rectifying portion can be adjusted using the cover portion.

[0097] Example 4. According to any one of Examples 1 to 3, the substrate processing apparatus may also have a through-hole located in the central portion of the base member, with the outer periphery of the bottom wall portion connected to the through-hole. In this case, the rectifying member rotates together with the base member, the support portion, and the substrate. That is, the rectifying member becomes relatively stationary relative to the substrate. Therefore, gas blown from the gas rectifying unit into the space between the lower surface of the substrate and the base member easily flows radially on the lower surface of the substrate. Therefore, it is possible to further suppress the adhesion of foreign matter to the lower surface of the substrate.

[0098] Example 5. According to the substrate processing apparatus of Example 4, when viewed in the direction of the rotation axis of the self-rectifying member, the plurality of pillars extend obliquely in both the circumferential and radial directions relative to the rotation axis. In this case, the gas is rectified by the plurality of pillars, making it easier for the gas to be discharged into the space between the lower surface of the substrate and the base member. Therefore, it is possible to further suppress the adhesion of foreign matter to the lower surface of the substrate.

[0099] Example 6. According to any one of Examples 1 to 5, the substrate processing apparatus may further include a control unit, a chemical solution supply unit comprising: a nozzle configured to eject etchant; and a drive unit configured to move the nozzle horizontally above a substrate supported by a support unit. The control unit is configured to control the drive unit and the gas supply unit to perform the following process: adjusting the gas supply amount from the gas supply unit according to the ejection position of the etchant onto the substrate, so that the gas supply amount to the gas rectifier unit when ejecting etchant from the nozzle onto the center of the substrate is less than the gas supply amount to the gas rectifier unit when ejecting etchant from the nozzle onto the outer periphery of the substrate. Furthermore, the degree of cooling near the center of the substrate caused by the eddy current generated at the opening of the gas rectifier unit may differ from the degree of cooling of the outer periphery of the substrate caused by the gas blown from the gap between the horizontal rectifier unit and the bottom wall. However, according to Example 7, the gas supply is relatively low when the central portion of the substrate is etched, so the degree of etching progress is similar near the center and the outer periphery of the substrate. Therefore, the in-plane uniformity of the etching process can be further improved.

[0100] Example 7. According to the substrate processing apparatus of Example 6, the radius of the central portion from the center of the substrate may be in the range of 60 mm to 90 mm.

[0101] Example 8. According to the substrate processing apparatus of Example 6 or Example 7, the control unit may also be configured as a control drive unit to perform the following process: reciprocating the nozzle to supply etching solution between the vicinity of the center of the substrate and the periphery of the substrate. In this case, it is easy to supply etching solution uniformly to the entire substrate. Therefore, the in-plane uniformity of the etching process can be improved.

[0102] Example 9. According to any one of Examples 6 to 8, the substrate processing apparatus may also have a control unit configured as a control drive unit to perform the following process: the moving speed of the nozzle when ejecting etchant from the nozzle towards the center of the substrate is 150 mm / sec or less. Furthermore, as described in Example 6, the degree of cooling near the center of the substrate may differ from the degree of cooling at the outer periphery of the substrate. However, according to Example 9, the moving speed of the nozzle when etching the center of the substrate is relatively low; therefore, the center of the substrate undergoes etching for a longer period. Thus, the degree of etching progress is similar near the center and at the outer periphery of the substrate. Therefore, the in-plane uniformity of the etching process can be further improved.

[0103] Example 10. According to any one of Examples 6 to 9, the substrate processing apparatus may also have a control unit configured to control the gas supply unit to perform the following process: adjusting the gas supply amount to the gas rectifier unit based on the substrate rotation speed. In this case, for example, the lower the substrate rotation speed, the lower the gas supply amount to the gas rectifier unit. When the substrate rotation speed is low, the negative pressure generated in the space between the lower surface of the substrate and the base member becomes smaller, making it difficult for foreign matter to be drawn into this space. Therefore, even if the gas supply amount to the gas rectifier unit is small, there is a tendency to suppress the adhesion of foreign matter to the lower surface of the substrate. Moreover, when the gas supply amount to the gas rectifier unit is small, the substrate is difficult to be cooled by the gas. Therefore, there is a tendency to improve the in-plane uniformity of the etching process.

[0104] Example 11. An example of a substrate processing method includes: a first step, supporting a substrate with a film formed on its upper surface separated from a base member by a support member, with the lower surface of the substrate facing the base member; a second step, rotating the substrate by rotating the base member and the support member; and a third step, supplying etchant to the upper surface of the rotating substrate while supplying gas to a gas rectifying unit, thereby discharging the gas rectified by the gas rectifying unit into the space between the lower surface of the substrate with etchant supplied on its upper surface and the base member. The gas rectifying unit includes: a rod-shaped member extending in a vertical direction, including a top end portion facing the lower surface of the substrate supported by the support member and disposed within a through hole provided in the base member; and an annular rectifying member disposed to surround the top end portion. The top end portion includes an annular folded-back portion provided on the outer peripheral surface, which protrudes outward from the outer peripheral surface of the top end portion and extends downward. The rectifying component includes: an annular bottom wall portion configured such that its inner periphery is separated from the outer periphery of its top end portion; an annular protrusion extending upward from the inner periphery of the bottom wall portion with its upper end located between the outer periphery of the folded-back portion and the top end portion; an annular horizontal rectifying portion extending horizontally, separated from the bottom wall portion, at a position outside the folded-back portion and above the bottom wall portion; and a plurality of pillars connecting the horizontal rectifying portion and the bottom wall portion, arranged circumferentially along the top end portion. In this case, the same effect as the device in Example 1 can be obtained.

[0105] Example 12. According to the substrate processing method of Example 11, the horizontal separation distance between the fold-back section and the horizontal rectifier section can also be 2mm to 10mm. In this case, the same effect as the device in Example 2 can be obtained.

[0106] Example 13. According to the substrate processing method of Example 11 or Example 12, the rectifier may also include an annular cover portion disposed between the fold-back portion and the horizontal rectifier portion. In this case, the same effect as the device in Example 3 can be obtained.

[0107] Example 14. According to the substrate processing method of any one of Examples 11 to 13, the through hole may be provided in the central part of the base member, and the outer periphery of the bottom wall part may be connected to the through hole. In this case, the same effect as the device in Example 4 can be obtained.

[0108] Example 15. According to the substrate processing method of Example 14, when viewed in the direction of the rotation axis of the self-rectifying member, the plurality of pillars extend obliquely in both the circumferential and radial directions relative to the rotation axis. In this case, the same effect as the device in Example 5 can be obtained.

[0109] Example 16. According to any one of Examples 11 to 15, in the third step, the amount of gas supplied to the gas rectifier when the etching solution is sprayed from the nozzle to the center of the substrate is less than the amount of gas supplied to the gas rectifier when the etching solution is sprayed from the nozzle to the outer periphery of the substrate. In this case, the same effect as the apparatus in Example 6 can be obtained.

[0110] Example 17. According to the substrate processing method of Example 16, the radius of the central portion from the center of the substrate may also be in the range of 60 mm to 90 mm.

[0111] Example 18. According to the substrate processing method of Example 16 or Example 17, in the third step, the nozzle is moved back and forth to supply etching solution between the vicinity of the center of the substrate and the periphery of the substrate. In this case, the same effect as the apparatus of Example 8 can be obtained.

[0112] Example 19. According to any one of Examples 16 to 18, the substrate processing method may also involve, in the third step, setting the nozzle's moving speed when spraying the etching solution from the nozzle towards the center of the substrate to 150 mm / sec or less. In this case, the same effect as the apparatus in Example 9 can be obtained.

[0113] Example 20. According to any one of Examples 16 to 19, the substrate processing method may also involve adjusting the gas supply to the gas rectifier in the third step based on the rotational speed of the substrate. In this case, the same effect as the apparatus in Example 10 can be obtained.

[0114] Example 21. Another example of a computer-readable storage medium may also record a program for causing the substrate processing apparatus to execute any one of Examples 11 to 20. In this case, the same operational effect as the apparatus in Example 1 can be obtained. In this specification, the computer-readable storage medium may also include: a non-transitory computer recording medium (e.g., various main storage devices or auxiliary storage devices) or a transitory computer recording medium (e.g., data signals that can be provided via a network).

Claims

1. A substrate processing apparatus, characterized in that, The substrate processing apparatus has: The support portion is configured to support a substrate on which a film is formed on its upper surface; A base member having a through hole is configured to be separate from and opposite to the lower surface of the substrate supported by the support portion. A rotating part configured to rotate the base member and the support part; A chemical solution supply unit is configured to supply etching solution to the upper surface of the substrate supported by the support unit. Gas Supply Department; as well as The gas rectifier is configured to rectify the gas supplied from the gas supply unit and discharge the rectified gas into the space between the lower surface of the substrate supported by the support unit and the base member. The gas rectifier includes: A rod-shaped member extending in a vertical direction, including a top end portion disposed within the through hole opposite to the lower surface of the substrate supported by the support portion; as well as A ring-shaped rectifier member configured to surround the top end portion. The top end includes an annular folded portion, which is provided on the outer peripheral surface of the top end in such a way that it protrudes outward from the outer peripheral surface and extends downward. The rectifier component includes: An annular bottom wall portion, wherein the inner periphery of the bottom wall portion is separated from the outer periphery of the top portion; An annular protrusion extends upward from the inner periphery of the bottom wall portion with its upper end located between the outer peripheral surfaces of the folded-back portion and the top portion; A ring-shaped horizontal rectifier extends horizontally in a state of separation from the bottom wall portion at a position outside the fold-back portion and above the bottom wall portion. as well as Multiple columns, which connect the horizontal rectifier and the bottom wall, are arranged circumferentially along the top end.

2. The substrate processing apparatus according to claim 1, characterized in that, The horizontal separation distance between the folding section and the horizontal rectifier section is 2mm to 10mm.

3. The substrate processing apparatus according to claim 1 or 2, characterized in that, The rectifying component further includes an annular cover portion disposed between the foldback portion and the horizontal rectifying portion in one of the two portions.

4. The substrate processing apparatus according to claim 1 or 2, characterized in that, The through hole is located in the central part of the base component. The outer periphery of the bottom wall is connected to the through hole.

5. The substrate processing apparatus according to claim 4, characterized in that, When viewed from the axis of rotation of the rectifier, the plurality of columns extend obliquely in both the circumferential and radial directions relative to the axis of rotation.

6. The substrate processing apparatus according to claim 1 or 2, characterized in that, The substrate processing apparatus also includes a control unit. The chemical solution supply unit includes: A nozzle configured to eject the etching solution; and A drive unit configured to move the nozzle horizontally above the substrate supported by the support unit. The control unit is configured to control the drive unit and the gas supply unit to perform the following process: based on the ejection position of the etchant sprayed onto the substrate, the supply amount of gas supplied from the gas supply unit is adjusted so that the supply amount of gas supplied to the gas rectifier unit when the etchant is sprayed from the nozzle onto the center of the substrate is less than the supply amount of gas supplied to the gas rectifier unit when the etchant is sprayed from the nozzle onto the outer periphery of the substrate.

7. The substrate processing apparatus according to claim 6, characterized in that, The radius of the central portion from the center of the substrate is in the range of 60mm to 90mm.

8. The substrate processing apparatus according to claim 6, characterized in that, The control unit is configured to control the drive unit to perform the following process: to reciprocate the nozzle to supply the etching solution between the center of the substrate and the periphery of the substrate.

9. The substrate processing apparatus according to claim 6, characterized in that, The control unit is configured to control the drive unit to perform the following process: to make the moving speed of the nozzle when spraying the etching solution from the nozzle toward the center of the substrate 150 mm / sec or less.

10. The substrate processing apparatus according to claim 6, characterized in that, The control unit is configured to control the gas supply unit to perform the following process: adjusting the amount of gas supplied to the gas rectifier unit according to the rotational speed of the substrate.

11. A substrate processing method, characterized in that, The substrate processing method includes: In the first step, the substrate is supported by a support portion in such a way that the lower surface of the substrate on which a film is formed on the upper surface is separated from the base member and the lower surface of the substrate is opposite to the base member. In the second step, the base plate is rotated by rotating the base member and the support portion; as well as In the third step, while supplying etching solution to the upper surface of the rotating substrate, gas is also supplied to the gas rectifier, thereby discharging the rectified gas from the gas rectifier into the space between the lower surface of the substrate on which the etching solution is supplied and the base member. The gas rectifier includes: A rod-shaped member extending in a vertical direction includes a top end portion that is opposite to the lower surface of the substrate supported by the support portion and disposed within a through hole provided in the base member; as well as A ring-shaped rectifier member configured to surround the top end portion. The top end includes an annular folded portion, which is provided on the outer peripheral surface of the top end in such a way that it protrudes outward from the outer peripheral surface and extends downward. The rectifier component includes: An annular bottom wall portion, wherein the inner periphery of the bottom wall portion is separated from the outer periphery of the top portion; An annular protrusion extends upward from the inner periphery of the bottom wall portion with its upper end located between the outer peripheral surfaces of the folded-back portion and the top portion; A ring-shaped horizontal rectifier extends horizontally in a state of separation from the bottom wall portion at a position outside the fold-back portion and above the bottom wall portion. as well as Multiple columns, which connect the horizontal rectifier and the bottom wall, are arranged circumferentially along the top end.

12. The substrate processing method according to claim 11, characterized in that, The horizontal separation distance between the folding section and the horizontal rectifier section is 2mm to 10mm.

13. The substrate processing method according to claim 11 or 12, characterized in that, The rectifying component further includes an annular cover portion disposed between the foldback portion and the horizontal rectifying portion in one of the two portions.

14. The substrate processing method according to claim 11 or 12, characterized in that, The through hole is located in the central part of the base component. The outer periphery of the bottom wall is connected to the through hole.

15. The substrate processing method according to claim 14, characterized in that, When viewed from the axis of rotation of the rectifier, the plurality of columns extend obliquely in both the circumferential and radial directions relative to the axis of rotation.

16. The substrate processing method according to claim 11 or 12, characterized in that, In the third process, The amount of gas supplied to the gas rectifier when the etching solution is sprayed from the nozzle to the center of the substrate is less than the amount of gas supplied to the gas rectifier when the etching solution is sprayed from the nozzle to the outer periphery of the substrate.

17. The substrate processing method according to claim 16, characterized in that, The radius of the central portion from the center of the substrate is in the range of 60mm to 90mm.

18. The substrate processing method according to claim 16, characterized in that, In the third process, The nozzle is moved back and forth to supply the etching solution between the center of the substrate and the periphery of the substrate.

19. The substrate processing method according to claim 16, characterized in that, In the third process, The moving speed of the nozzle when spraying the etching solution from the nozzle toward the center of the substrate is 150 mm / sec or less.

20. The substrate processing method according to claim 16, characterized in that, In the third process, The amount of gas supplied to the gas rectifier is adjusted according to the rotational speed of the substrate.

21. A computer-readable storage medium, characterized in that, The storage medium records a program for causing the substrate processing apparatus to perform the substrate processing method according to any one of claims 11 to 20.

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