Power module and vehicle having the same

Abstract

The application provides a power module and a vehicle with the same, and the power module comprises a ceramic backing plate, a power copper bar assembly and a transition copper sheet, the ceramic backing plate has a top copper clad layer, the top copper clad layer comprises a first copper clad layer, a second copper clad layer and a third copper clad layer, the first copper clad layer and the second copper clad layer are symmetrically arranged about the third copper clad layer, the first copper clad layer is provided with a first power chip, and the second copper clad layer is provided with a second power chip; the power copper bar assembly comprises a copper bar positive electrode, a copper bar negative electrode and a copper bar body, and the transition copper sheet is arranged between the copper bar negative electrode and the second power chip, wherein the first power chip and the copper bar positive electrode, the copper bar negative electrode, the transition copper sheet and the second power chip, the copper bar positive electrode and the first copper clad layer, the second power chip and the second copper clad layer, and the copper bar body and the third copper clad layer are connected through a sintering layer of a sintering process. The application solves the problem of low power connection reliability of the power chip in the power module.

Description

Technical Field

[0001] This invention relates to the field of vehicle technology, and more specifically, to a power module and a vehicle having the same. Background Technology

[0002] The power module is a core component of the electric drive system in electric vehicles, responsible for converting high-power electrical energy. It has a decisive impact on the performance, efficiency, cost, safety, and reliability of the electric drive system and even the entire vehicle. Therefore, the characteristics, structure, and manufacturing process of the power module are particularly important. Existing power modules mainly focus on heat dissipation, circuit connection, and chip layout. They reduce thermal resistance and improve heat dissipation efficiency through direct cooling on one or both sides; achieve balanced heat dissipation during time-sharing operation of power chips through staggered chip placement; and achieve highly reliable connections through ultrasonic bonding of power terminals.

[0003] The prior art discloses a heat dissipation module for a power module, a load controller, and a vehicle. It uses a heat sink to clamp the power module to achieve double-sided heat dissipation. However, this method has a relatively high thermal resistance and is easily affected by the clamping force. In addition, thermally conductive material needs to be filled between the heat sink and the power module to ensure good contact, which also increases the thermal resistance and affects the heat dissipation effect of the power module.

[0004] The prior art also discloses a power module that uses an integrally molded power terminal. The integrally molded power terminal reduces the reliability risk of power connection with separate bonding wires. However, this method has the following problems in practical applications: the power terminal is generally thick, and it is difficult to bond it to the chip in the form of a bonding strip, as well as the risk of chip damage caused by deformation of the bonding strip. Summary of the Invention

[0005] The main objective of this invention is to provide a power module and a vehicle having the same, in order to solve the problem of low reliability of power connections in existing power modules.

[0006] To achieve the above objectives, according to one aspect of the present invention, a power module is provided, comprising: a ceramic backing plate having a top copper clad layer, the top copper clad layer including a first copper clad layer, a second copper clad layer and a third copper clad layer, the first copper clad layer and the second copper clad layer being symmetrically disposed about the third copper clad layer, the first copper clad layer having a first power chip disposed thereon, and the second copper clad layer having a second power chip disposed thereon; a power copper busbar assembly including a copper busbar positive electrode, a copper busbar negative electrode and a copper busbar body, the copper busbar positive electrode being disposed between the first power chip and the first copper clad layer, at least a portion of the copper busbar body being disposed on the third copper clad layer, and the first power chip being electrically connected to the second power chip through the copper busbar body; and a transition copper sheet being disposed between the copper busbar negative electrode and the second power chip, wherein the first power chip and the copper busbar positive electrode, the copper busbar negative electrode, the transition copper sheet and the second power chip, the copper busbar positive electrode and the first copper clad layer, the second power chip and the second copper clad layer, and the copper busbar body and the third copper clad layer are all connected by sintered layers formed by a sintering process.

[0007] Furthermore, the top surface of a portion of the positive electrode of the copper busbar is connected to the bottom surface of the first power chip through a sintering layer, the bottom surface of a portion of the positive electrode of the copper busbar is connected to the first copper cladding layer through a sintering layer, the bottom surface of a portion of the negative electrode of the copper busbar is connected to the top surface of the transition copper sheet through a sintering layer, the bottom surface of the transition copper sheet is connected to the top surface of the second power chip through a sintering layer, the bottom surface of the second power chip is connected to the second copper cladding layer through a sintering layer, and the bottom surface of the copper busbar body is connected to the third copper cladding layer through a sintering layer.

[0008] Furthermore, the copper busbar body includes: a first copper busbar body, which is connected to a third copper cladding layer through a sintering layer; a second copper busbar body, which is disposed opposite to the first copper busbar body and is connected to the third copper cladding layer through a sintering layer; and a first power chip is electrically connected to the second power chip through the first copper busbar body, the second copper busbar body, and the second power chip.

[0009] Further, the positive electrode of the copper busbar includes: a first section, the first end of which extends along the width direction of the ceramic substrate; a second section, the first end of which is connected to the second end of the first section, and the second end of which extends along the length direction of the ceramic substrate; the negative electrode of the copper busbar includes: a third section, the second end of which extends along the width direction of the ceramic substrate, and the third section overlaps the first section; a fourth section, the first end of which is connected to the first end of the third section, and the second end of which extends along the length direction of the ceramic substrate, and the fourth section and the second section are symmetrically arranged about the third copper clad layer.

[0010] Furthermore, the power copper busbar assembly also includes: copper busbar output poles, a portion of which are connected to the third copper cladding layer via a sintered layer, and a portion of which are electrically connected to the second and fourth assembly segments.

[0011] Furthermore, the copper busbar output electrode also includes: a fifth section, which is connected to the third copper cladding layer through a sintering process, and is electrically connected to the second and fourth sections, with the first end of the fifth section extending along the length of the ceramic liner; and a sixth section, the middle of which is connected to the second end of the fifth section, which is used to connect to the power load, and extends along the width of the ceramic liner.

[0012] Furthermore, the power module also includes an insulating pad disposed between the first and third component sections.

[0013] Furthermore, the power module also includes: a capacitor crimped copper busbar, which includes a positive terminal and a negative terminal. The positive terminal is crimped to the first section via a toothed spring piece inside the capacitor crimped copper busbar, and the positive terminal is located below the first section. The negative terminal is crimped to the third section via a toothed spring piece, and the negative terminal is located above the third section.

[0014] Furthermore, the power module also includes a cooling base plate, which is connected to the bottom copper-clad layer of the ceramic liner through a sintered layer formed by a sintering process.

[0015] According to another aspect of the present invention, a vehicle is provided, the vehicle including a power module, the power module being the power module described above.

[0016] Applying the technical solution of this invention, a first power chip is disposed on a first copper-clad layer on the top of a ceramic backing plate, a second power chip is disposed on a second copper-clad layer, and at least a portion of the copper busbar body is disposed on a third copper-clad layer. The first power chip is directly electrically connected to the second power chip through the copper busbar body, and a transition copper sheet is disposed between the negative electrode of the copper busbar and the second power chip. The connections between the first power chip and the positive electrode of the copper busbar, the negative electrode of the copper busbar, the transition copper sheet and the second power chip, the positive electrode of the copper busbar and the first copper-clad layer, the second power chip and the second copper-clad layer, and the copper busbar body are all specified. The connection between the power copper busbar assembly and the third copper cladding layer is achieved through a sintering process, which improves the connection reliability between the power copper busbar assembly and the first and second power chips, as well as the connection reliability between the positive electrode of the copper busbar, the copper busbar body, the first power chip, the second power chip, and the ceramic substrate. Furthermore, the copper busbar body and the transition copper sheet can enhance the current carrying capacity of the power module, thereby increasing the heat capacity of the first and second power chips and improving their transient performance output capability. This solves the problem of low power connection reliability within the power module in the prior art. Attached Figure Description

[0017] The accompanying drawings, which form part of this application, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings:

[0018] Figure 1 A schematic diagram of the structure of a first embodiment of the power module according to the present invention is shown;

[0019] Figure 2 A schematic diagram of a second embodiment of the power module according to the present invention is shown;

[0020] Figure 3 A schematic diagram of a third embodiment of the power module according to the present invention is shown;

[0021] Figure 4 A schematic diagram of a fourth embodiment of the power module according to the present invention is shown;

[0022] Figure 5 A schematic diagram of the structure of a first embodiment of the copper busbar positive electrode according to the present invention is shown;

[0023] Figure 6 A schematic diagram of a second embodiment of the copper busbar positive electrode according to the present invention is shown;

[0024] Figure 7 A schematic diagram of the structure of a first embodiment of the copper busbar negative electrode according to the present invention is shown;

[0025] Figure 8A schematic diagram of the structure of a second embodiment of the copper busbar negative electrode according to the present invention is shown;

[0026] Figure 9 A schematic diagram of the structure of a first embodiment of the copper busbar output electrode according to the present invention is shown;

[0027] Figure 10 A schematic diagram of the structure of a second embodiment of the copper busbar output pole according to the present invention is shown;

[0028] Figure 11 A schematic diagram of the structure of a first embodiment of the first copper busbar body according to the present invention is shown;

[0029] Figure 12 A schematic diagram of a second embodiment of the first copper busbar body according to the present invention is shown;

[0030] Figure 13 A schematic diagram of the structure of a first embodiment of the second copper busbar body according to the present invention is shown;

[0031] Figure 14 A schematic diagram of the structure of a second embodiment of the second copper busbar body according to the present invention is shown;

[0032] Figure 15 A schematic diagram of a fifth embodiment of the power module according to the present invention is shown;

[0033] Figure 16 A schematic diagram of the structure of a first embodiment of the capacitor-pressed copper busbar according to the present invention is shown;

[0034] Figure 17 A schematic diagram of a second embodiment of the capacitor-pressed copper busbar according to the present invention is shown;

[0035] Figure 18 It shows Figure 17 A schematic diagram of the embodiment at point AA.

[0036] The above figures include the following reference numerals:

[0037] 10. Ceramic backing plate; 11. Top copper clad layer; 111. First copper clad layer; 112. Second copper clad layer; 113. Third copper clad layer; 12. Bottom copper clad layer; 13. Ceramic layer;

[0038] 21. First power chip; 22. Second power chip;

[0039] 30. Sintered layer;

[0040] 40. Power copper busbar assembly; 41. Positive copper busbar terminal; 411. First assembly section; 412. Second assembly section; 42. Negative copper busbar terminal;

[0041] 421. Third section; 422. Fourth section; 43. Copper busbar body; 431. First copper busbar body; 432. Second copper busbar body; 44. Copper busbar output pole; 441. Fifth section; 442. Sixth section;

[0042] 50. Insulating gaskets;

[0043] 60. Capacitor crimped to copper busbar; 600. Toothed spring contact; 61. Crimped positive terminal of copper busbar; 62. Crimped negative terminal of copper busbar;

[0044] 70. Cooling base plate;

[0045] 80. Plastic sealant;

[0046] 90. Transition copper sheet. Detailed Implementation

[0047] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0048] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0049] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms can be used interchangeably where appropriate so that the embodiments of this application described herein can be implemented, for example, in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0050] Exemplary embodiments according to this application will now be described in more detail with reference to the accompanying drawings. However, these exemplary embodiments may be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. It should be understood that these embodiments are provided so that the disclosure of this application is thorough and complete, and that the concept of these exemplary embodiments is fully conveyed to those skilled in the art. In the drawings, for clarity, the thickness of layers and regions may be exaggerated, and the same reference numerals are used to denote the same devices, and therefore their description will be omitted.

[0051] Combination Figures 1 to 18 As shown, a power module is provided according to a specific embodiment of this application.

[0052] Specifically, such as Figure 1 As shown, the power module includes a ceramic backing plate 10, a power copper busbar assembly 40, and a transition copper sheet 90. The ceramic backing plate 10 has a top copper clad layer 11, which includes a first copper clad layer 111, a second copper clad layer 112, and a third copper clad layer 113. The first copper clad layer 111 and the second copper clad layer 112 are symmetrically arranged with respect to the third copper clad layer 113. A first power chip 21 is disposed on the first copper clad layer 111, and a second power chip 22 is disposed on the second copper clad layer 112. The power copper busbar assembly 40 includes a copper busbar positive electrode 41, a copper busbar negative electrode 42, and a copper busbar body 43. The copper busbar positive electrode 41 is disposed between the first power chip 21 and the first copper clad layer 111, and at least a portion of the copper busbar body 43 is disposed on the third copper clad layer 113. The first power chip 21 is electrically connected to the second power chip 22 through the copper busbar body 43. The transition copper sheet 90 is disposed between the copper busbar negative electrode 42 and the second power chip 22. Among them, the first power chip 21 is connected to the positive copper busbar 41, the negative copper busbar 42, the transition copper sheet 90 is connected to the second power chip 22, the positive copper busbar 41 is connected to the first copper cladding layer 111, the second power chip 22 is connected to the second copper cladding layer 112, and the copper busbar body 43 is connected to the third copper cladding layer 113 through a sintering layer 30 formed by sintering process.

[0053] Applying the technical solution of this embodiment, a first power chip 21 is disposed on the first copper-clad layer 111 of the top copper-clad layer 11 of the ceramic backing plate 10, and a second power chip 22 is disposed on the second copper-clad layer 112. At least a portion of the copper busbar body 43 is disposed on the third copper-clad layer 113. The first power chip 21 is directly electrically connected to the second power chip 22 through the copper busbar body 43. A transition copper sheet 90 is disposed between the negative electrode 42 of the copper busbar and the second power chip 22. The connections between the first power chip 21 and the positive electrode 41 of the copper busbar, the negative electrode 42 of the copper busbar, the transition copper sheet 90 and the second power chip 22, the positive electrode 41 of the copper busbar and the first copper-clad layer 111, and the second power chip 22 and the second copper-clad layer 113 are all connected. The layers 112 and the copper busbar body 43 are connected by a sintered layer 30 through a sintering process, which improves the connection reliability between the power copper busbar assembly 40 and the first power chip 21 and the second power chip 22, as well as the connection reliability between the positive electrode of the copper busbar, the copper busbar body, the first power chip 21, the second power chip 22 and the ceramic substrate 10. Moreover, the copper busbar body 43 and the transition copper sheet 90 can improve the current carrying capacity of the power module, which increases the heat capacity of the first power chip 21 and the second power chip 22 and improves the transient performance output capability of the first power chip 21 and the second power chip 22, thus solving the problem of low power connection reliability in the power module in the prior art.

[0054] The top surface of a portion of the positive electrode 41 of the copper busbar is connected to the bottom surface of the first power chip 21 through a sintering layer 30. The bottom surface of a portion of the positive electrode 41 of the copper busbar is connected to the first copper cladding layer 111 through a sintering layer 30. The bottom surface of a portion of the negative electrode 42 of the copper busbar is connected to the top surface of the transition copper sheet 90 through a sintering layer 30. The bottom surface of the transition copper sheet 90 is connected to the top surface of the second power chip 22 through a sintering layer 30. The bottom surface of the second power chip 22 is connected to the second copper cladding layer 112 through a sintering layer 30. The bottom surface of the copper busbar body 43 is connected to the third copper cladding layer 113 through a sintering layer 30. This configuration improves the connection reliability between the positive electrode 41 of the copper busbar and the first power chip 21 and the first copper cladding layer 111, and improves the connection reliability between the negative electrode 42 of the copper busbar, the transition copper sheet 90, the second power chip 22 and the second copper cladding layer 112. By setting the transition copper sheet 90 between the bottom surface of the negative electrode 42 of the copper busbar and the top surface of the second power chip 22, the heat capacity of the second power chip 22 is further increased, the transient performance output capability of the second power chip 22 is improved, and thus the current carrying capacity of the power module is improved.

[0055] The copper busbar body 43 includes a first copper busbar body 431 and a second copper busbar body 432. The first copper busbar body 431 is connected to the third copper cladding layer 113 through a sintering layer 30. The first copper busbar body 431 and the second copper busbar body 432 are disposed opposite to each other. The second copper busbar body 432 is connected to the third copper cladding layer 113 through the sintering layer 30. The first power chip 21 is electrically connected to the second power chip 22 through the first copper busbar body 431, the second copper busbar body 432, the first power chip 21, and the second power chip 22. Specifically, the first copper busbar body 431, the second copper busbar body 432, the first power chip 21, and the second power chip 22 are electrically connected according to a certain circuit topology, such as... Figure 1 As shown, the first power chip 21 and the second power chip 22 form a half-bridge circuit topology through the first copper busbar body 431 and the second copper busbar body 432. In this embodiment, the first power chip 21 is electrically connected to the second power chip 22 through the first copper busbar body 431 and the second copper busbar body 432. The first power chip 21 and the second power chip 22 are then sintered to the positive electrode 41 and the negative electrode 42 of the copper busbar, respectively. This improves the connection reliability between the positive electrode 41 and the negative electrode 42 of the copper busbar and the first power chip 21, the second power chip 22, and the first copper busbar body 431 and the second copper busbar body 432. It further enhances the thermal capacity and transient current output capability of the first power chip 21 and the second power chip 22, thereby enhancing the current carrying capacity of the power module. This solves the problem of high bonding difficulty in the prior art where power terminals are connected to chips in the form of bonding tape, thus avoiding the problem of chip damage caused by deformation of the bonding tape.

[0056] The positive electrode 41 of the copper busbar includes a first section 411 and a second section 412. The first end of the first section 411 extends along the width direction of the ceramic liner 10. The first end of the second section 412 is connected to the second end of the first section 411, and the second end of the second section 412 extends along the length direction of the ceramic liner 10. The negative electrode 42 of the copper busbar includes a third section 421 and a fourth section 422. The second end of the third section 421 extends along the width direction of the ceramic liner 10 and overlaps with the first section 411. The first end of the fourth section 422 is connected to the first end of the third section 421, and the second end of the fourth section 422 extends along the length direction of the ceramic liner 10. The fourth section 422 and the second section 412 are symmetrically arranged with respect to the third copper clad layer 113. By stacking the first section 411 of the positive copper busbar 41 with the third section 421 of the negative copper busbar 42, the parasitic inductance of the power module is effectively reduced, thereby effectively improving the operating voltage margin of the power module and enhancing the output performance and operational safety of the power module.

[0057] like Figure 2 , Figure 3As shown, the positive electrode 41 of the copper busbar is connected to the first copper cladding layer 111 through a sintered layer 30 formed by a sintering process. A Z-shaped bending pretreatment is required for the positive electrode 41. The first segment 411 of the positive electrode 41 serves as the positive input terminal of the power module, while the second segment 412 is connected to the first power chip 21. For IGBT power chips, the second segment 412 is the collector of the IGBT power chip. The positive electrode 41 of the copper busbar is typically made of oxygen-free copper with high conductivity.

[0058] like Figure 2 , Figure 4 As shown, the copper busbar negative electrode 42 is connected to the top surface of the transition copper sheet 90 through a sintering layer 30. A Z-shaped bending pretreatment is required for the copper busbar negative electrode 42. The third segment 421 of the copper busbar negative electrode 42 serves as the negative input terminal of the power module, while the fourth segment 422 is connected to the second power chip 22. For the IGBT power chip, the fourth segment 422 is the emitter of the IGBT power chip. The copper busbar negative electrode 42 is typically made of oxygen-free copper with high conductivity.

[0059] The power copper busbar assembly 40 also includes copper busbar output poles 44. Part of the copper busbar output poles 44 are connected to the third copper cladding layer 113 through a sintered layer 30, and part of the copper busbar output poles 44 are electrically connected to the second component segment 412 and the fourth component segment 422. Further, the copper busbar output poles 44 also include a fifth component segment 441 and a sixth component segment 442. The fifth component segment 441 is connected to the third copper cladding layer 113 through a sintered layer 30 formed by the sintering process, and the fifth component segment 441 is electrically connected to the second component segment 412 and the fourth component segment 422. The first end of the fifth component segment 441 extends along the length direction of the ceramic liner 10, and the middle part of the sixth component segment 442 is connected to the second end of the fifth component segment 441. The sixth component segment 442 is used to connect to a power load, and the sixth component segment 442 extends along the width direction of the ceramic liner 10. In this embodiment, the fifth segment 441 of the copper busbar output electrode 44 is electrically connected to the second segment 412 and the fourth segment 422. For the IGBT power chip, the fifth segment 441 of the copper busbar output electrode 44 is electrically connected to the collector and emitter of the IGBT power chip. The sixth segment 442 serves as the output electrode of the IGBT power chip and is connected to the power load. The bottom surface of the fifth segment 441 is connected to the top surface of the third copper cladding layer 113 via a sintering layer 30, requiring a Z-shaped bending pretreatment of the copper busbar output electrode 44. Figure 2 , Figure 3 As shown. The copper busbar output electrode 44 is typically made of oxygen-free copper with high conductivity. This improves the connection reliability between the copper busbar output electrode 44 and the third copper cladding layer 113, and also improves the connection reliability between the copper busbar output electrode 44 and the positive and negative electrodes 41 and 42 of the copper busbar.

[0060] The power module also includes an insulating pad 50, which is disposed between the first component section 411 and the third component section 421. The insulating pad 50 provides electrical isolation between the positive copper busbar 41 and the negative copper busbar 42, further improving the operational safety of the power module.

[0061] like Figure 15 As shown, the power module also includes a capacitor-bonded copper busbar 60, which includes a positive terminal 61 and a negative terminal 62. The positive terminal 61 is bonded to the first component segment 411 via a toothed spring tab 600 within the capacitor-bonded copper busbar 60, and is positioned below the first component segment 411. The negative terminal 62 is bonded to the third component segment 421 via the toothed spring tab 600, and is positioned above the third component segment 421. This configuration allows the positive and negative terminals 41 and 42, separated by an insulating pad 50, to be bonded together by the capacitor-bonded copper busbar 60 to achieve power transfer, further reducing the parasitic inductance of the power module and reducing the bolt connection process and steps required in practical applications, thereby improving the production efficiency of the power module. In this embodiment, the toothed spring 600 is a wave spring with a rebound force. The wave spring and the capacitor pressing copper busbar 60 can be connected by brazing, ultrasonic bonding, sintering or other methods.

[0062] The power module also includes a cooling base plate 70, which is connected to the bottom copper-clad layer 12 of the ceramic substrate 10 via a sintered layer 30 formed by a sintering process. This not only improves the connection reliability between the cooling base plate 70 and the ceramic substrate 10, but also enables auxiliary heat dissipation for the first power chip 21 and the second power chip 22, increasing the heat dissipation area of ​​the first power chip 21 and the second power chip 22 and improving their heat dissipation efficiency.

[0063] In one specific embodiment of this application, the ceramic liner 10 further includes a ceramic layer 13, and the power module further includes a molding compound 80. After the second component segment 412 is connected to the first power chip 21 and the first copper cladding layer 111, the fourth component segment 422 is connected to the transition copper sheet 90, the second power chip 22, the second copper cladding layer 112, the copper busbar body 43, the fifth component segment 441, and the third copper cladding layer 113 through the sintering layer 30 of the sintering process, it is then protected by the molding compound 80. The first component segment 411, the third component segment 421, the sixth component segment 442, and part of the cooling base plate 70 are located outside the molding compound 80. The sintering raw materials in the sintering process are usually high thermal conductivity materials such as silver powder, silver paste, silver film, copper powder, copper alloy, and copper film.

[0064] The power module in the above embodiments can also be applied to the field of vehicle technology. Specifically, according to another specific embodiment of this application, a vehicle is also provided, which includes a power module, the power module being the one described in the above embodiments. Using the power module in the above embodiments achieves ultra-low stray inductance and enhances operational safety. While reducing redundancy, it achieves high-performance output and reduces bolt connection processes and procedures in practical applications, thus improving production efficiency. Therefore, applying this power module to vehicles can also improve vehicle performance and production efficiency.

[0065] In practical applications, the power module of this application can be configured as either a half-bridge circuit topology or a full-bridge circuit topology, depending on actual needs.

[0066] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.

[0067] In addition to the above, it should be noted that the terms "one embodiment," "another embodiment," and "embodiment" used in this specification refer to specific features, structures, or characteristics described in connection with that embodiment, which are included in at least one embodiment described in the general description of this application. The appearance of the same expression in multiple places in the specification does not necessarily refer to the same embodiment. Furthermore, when a specific feature, structure, or characteristic is described in connection with any embodiment, the intention is to suggest that implementing such a feature, structure, or characteristic in conjunction with other embodiments also falls within the scope of this invention.

[0068] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0069] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A power module, characterized by The application relates to a ceramic substrate (10) having a top copper layer (11) comprising a first copper layer (111), a second copper layer (112) and a third copper layer (113), the first copper layer (111) and the second copper layer (112) being symmetrically arranged with respect to the third copper layer (113), the first copper layer (111) being provided with a first power chip (21), the second copper layer (112) being provided with a second power chip (22); a power copper bar assembly (40) comprising a copper bar positive electrode (41), a copper bar negative electrode (42) and a copper bar body (43), the copper bar positive electrode (41) being arranged between the first power chip (21) and the first copper layer (111), at least part of the copper bar body (43) being arranged on the third copper layer (113), the first power chip (21) being electrically connected to the second power chip (22) through the copper bar body (43); a transition copper sheet (90) arranged between the copper bar negative electrode (42) and the second power chip (22), wherein the first power chip (21) and the copper bar positive electrode (41), the copper bar negative electrode (42), the transition copper sheet (90) and the second power chip (22), the copper bar positive electrode (41) and the first copper layer (111), the second power chip (22) and the second copper layer (112), and the copper bar body (43) and the third copper layer (113) are connected through a sintering layer (30) of a sintering process; a top surface of part of the copper bar positive electrode (41) is connected to a bottom surface of the first power chip (21) through the sintering layer (30), a bottom surface of part of the copper bar positive electrode (41) is connected to the first copper layer (111) through the sintering layer (30), a bottom surface of part of the copper bar negative electrode (42) is connected to a top surface of the transition copper sheet (90) through the sintering layer (30), a bottom surface of the transition copper sheet (90) is connected to a top surface of the second power chip (22) through the sintering layer (30), a bottom surface of the second power chip (22) is connected to the second copper layer (112) through the sintering layer (30), and a bottom surface of the copper bar body (43) is connected to the third copper layer (113) through the sintering layer (30). The copper bar body (43) comprises: a first copper bar body (431) connected to the third copper layer (113) through the sintering layer (30); ​ ​ ​ 2. The power module of claim 1, wherein, ​ ​ A second copper bar body (432) is oppositely arranged with the first copper bar body (431), and the second copper bar body (432) is connected with the third copper clad layer (113) through the sintering layer (30). The first power chip (21) is electrically connected with the second power chip (22) through the first copper bar body (431) and the second copper bar body (432).

3. The power module of claim 1, wherein, The copper bar positive electrode (41) comprises: A first component segment (411) is arranged along the width direction of the ceramic backing plate (10); A second component segment (412) is connected with the second end of the first component segment (411), and the second end of the second component segment (412) is arranged along the length direction of the ceramic backing plate (10); The copper bar negative electrode (42) comprises: A third component segment (421) is arranged along the width direction of the ceramic backing plate (10), and the third component segment (421) is arranged on the first component segment (411) in an overlapping manner; A fourth component segment (422) is connected with the first end of the third component segment (421), and the second end of the fourth component segment (422) is arranged along the length direction of the ceramic backing plate (10). The fourth component segment (422) is symmetrically arranged with the second component segment (412) about the third copper clad layer (113).

4. The power module of claim 3, wherein, The power copper bar assembly (40) further comprises: A copper bar output pole (44) is connected with the third copper clad layer (113) through the sintering layer (30), and part of the copper bar output pole (44) is electrically connected with the second component segment (412) and the fourth component segment (422).

5. The power module of claim 4, wherein, The copper bar output pole (44) further comprises: A fifth component segment (441) is connected with the third copper clad layer (113) through the sintering layer (30) of the sintering process, and the fifth component segment (441) is electrically connected with the second component segment (412) and the fourth component segment (422). The first end of the fifth component segment (441) is arranged along the length direction of the ceramic backing plate (10); A sixth component segment (442) is connected with the second end of the fifth component segment (441) at the middle part of the sixth component segment (442). The sixth component segment (442) is used for connecting with a power load, and the sixth component segment (442) is arranged along the width direction of the ceramic backing plate (10).

6. The power module of claim 3, wherein, The power module further comprises: An insulating gasket (50) is arranged between the first component segment (411) and the third component segment (421).

7. The power module of claim 3, wherein, The power module further comprises: A capacitor crimping copper bar (60) includes a crimping copper bar positive electrode (61) and a crimping copper bar negative electrode (62), the crimping copper bar positive electrode (61) is connected with the first component section (411) through the staggered elastic sheet (600) in the capacitor crimping copper bar (60), and the crimping copper bar positive electrode (61) is arranged below the first component section (411), the crimping copper bar negative electrode (62) is connected with the third component section (421) through the staggered elastic sheet (600), and the crimping copper bar negative electrode (62) is arranged above the third component section (421).

8. The power module of claim 1, wherein, The power module further comprises: A cooling bottom plate (70) is connected with the bottom copper layer (12) of the ceramic lining plate (10) through a sintering layer (30) of a sintering process.

9. A vehicle characterized by comprising: The vehicle comprises a power module, and the power module is the power module according to any one of claims 1-8.

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