Method for manufacturing display panel

Abstract

The present application provides a method for manufacturing a display panel, which includes: providing a base, including providing a substrate, and an anode pattern and a photoresist layer stacked on the substrate, wherein the orthographic projection of the photoresist layer is located within the orthographic projection of the anode pattern in a direction perpendicular to the substrate; forming a pixel definition layer on the substrate; patterning the pixel definition layer, opening an opening corresponding to the photoresist layer in the pixel definition layer, and removing the photoresist layer in the opening to expose the anode pattern, wherein the opening includes an opening close to one side of the substrate, and the area of the opening in a direction perpendicular to the substrate is equal to the area of the photoresist layer; the present application arranges the photoresist layer on the anode pattern before manufacturing the pixel definition layer, so that in the process of manufacturing the pixel definition layer opening, even if part of the pixel definition layer material remains in the opening, it can be removed together with the photoresist layer when removing the photoresist layer, thereby improving the display effect of the display panel.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a method for manufacturing a display panel. Background Art

[0002] Organic Light Emitting Diodes (OLED) displays have the advantages of being ultra-light, ultra-thin, high brightness, wide viewing angle, low voltage, low power consumption, fast response, high definition, shock-resistant, flexible, low cost, simple process, using fewer raw materials, high luminous efficiency and a wide temperature range. Therefore, OLED display technology is considered to be the most promising new generation display technology.

[0003] OLED has an anode, a pixel definition layer, a light-emitting functional layer and a cathode formed in sequence on a substrate, wherein the pixel definition layer includes multiple openings and multiple dams, the side walls of the multiple dams enclose the multiple openings, one opening corresponds to one anode, and the light-emitting functional layer is located in the opening. In the existing production process of the pixel definition layer, an organic photoresist material is usually coated, exposed, developed and baked on the anode to obtain a pixel definition layer, wherein the pixel definition layer has an opening at a position corresponding to the anode. At this time, some organic photoresist material will remain on the upper surface of the anode. Due to the properties of the organic photoresist material itself, the residual organic photoresist material is hydrophobic and is not easy to be washed with water or dissolved by the developer, and then adheres to the anode, resulting in the subsequent organic functional ink material being unable to spread, thereby forming a tailing phenomenon, affecting the display effect of the display panel. Summary of the Invention

[0004] The embodiments of the present application provide a method for manufacturing a display panel to alleviate the deficiencies in the related art.

[0005] To achieve the above functions, the technical solutions provided in the embodiments of the present application are as follows:

[0006] An embodiment of the present application provides a method for manufacturing a display panel, comprising the following steps:

[0007] Providing a substrate, including providing a base plate, and an anode pattern and a photoresist layer stacked on the base plate, wherein in a direction perpendicular to the base plate, the orthographic projection of the photoresist layer is located within the orthographic projection of the anode pattern;

[0008] forming a pixel definition layer on the substrate;

[0009] performing a patterning process on the pixel definition layer, opening an opening corresponding to the photoresist layer on the pixel definition layer, and removing the photoresist layer in the opening to expose the anode pattern, wherein the opening includes an opening close to a side of the substrate, and an orthographic projection of the photoresist layer in a direction perpendicular to the substrate overlaps with the opening;

[0010] A light-emitting functional layer, a cathode layer and an encapsulation layer are sequentially formed on the anode pattern.

[0011] In the manufacturing method provided in the embodiment of the present application, providing a substrate includes providing a substrate, and stacking an anode pattern and a photoresist layer on the substrate, wherein the step of positioning the orthographic projection of the photoresist layer within the orthographic projection of the anode pattern in a direction perpendicular to the substrate includes:

[0012] forming an anode layer on the substrate;

[0013] forming a photoresist material layer on the anode layer;

[0014] performing patterning on the photoresist material layer to obtain the photoresist layer;

[0015] Using the photoresist layer as an anti-etching layer, etching the anode layer to obtain an anode pattern;

[0016] The photoresist layer is patterned so that, in a direction perpendicular to the substrate, the orthographic projection of the photoresist layer is located within the orthographic projection of the anode pattern.

[0017] In the manufacturing method provided in the embodiment of the present application, the material of the photoresist material layer is a hydrophilic photoresist material.

[0018] In the manufacturing method provided in the embodiment of the present application, the step of patterning the photoresist layer so that the orthographic projection of the photoresist layer is located within the orthographic projection of the anode pattern in a direction perpendicular to the substrate includes:

[0019] performing an exposure process on the photoresist layer to form a step portion on a peripheral side of the photoresist layer along a direction parallel to a horizontal plane of the photoresist layer;

[0020] The photoresist layer is etched to remove the step portion, exposing a portion of the anode pattern on a peripheral side of the photoresist layer.

[0021] In the manufacturing method provided in the embodiment of the present application, the photoresist layer is exposed using a half-tone mask process.

[0022] In the manufacturing method provided in the embodiment of the present application, the photoresist layer is etched by a dry etching method.

[0023] In the manufacturing method provided in the embodiment of the present application, the material of the photoresist layer is a positive photoresist material, and the step of patterning the photoresist layer so that the orthographic projection of the photoresist layer is located within the orthographic projection of the anode pattern in a direction perpendicular to the substrate further includes:

[0024] The photoresist layer is exposed.

[0025] In the manufacturing method provided in the embodiment of the present application, the step of forming a pixel definition layer on the substrate includes:

[0026] forming a photoresist material on the substrate;

[0027] The photoresist material is exposed to obtain the pixel definition layer.

[0028] In the manufacturing method provided in an embodiment of the present application, the pixel definition layer is patterned, an opening corresponding to the photoresist layer is opened on the pixel definition layer, and the photoresist layer in the opening is removed to expose the anode pattern, wherein the opening includes an opening close to a side of the substrate, and the orthographic projection of the photoresist layer in a direction perpendicular to the substrate overlaps with the opening, comprising:

[0029] exposing the pixel definition layer to form a pixel definition layer pattern;

[0030] The pixel definition layer pattern is developed, the opening corresponding to the anode pattern is opened on the pixel definition layer pattern, and the photoresist layer in the opening is removed to expose the anode pattern.

[0031] In the manufacturing method provided in the embodiment of the present application, the thickness of the photoresist layer is less than 2 microns.

[0032] Beneficial effects of the embodiments of the present application: This embodiment provides a photoresist layer on the anode pattern before forming the pixel definition layer, so that during the process of forming the pixel definition layer opening, even if part of the pixel definition layer material remains in the opening, it can be removed together with the photoresist layer when removing the photoresist layer, thereby avoiding the phenomenon in the prior art that part of the photoresist material remains on the upper surface of the anode pattern when making the pixel definition layer, thereby improving the display effect and performance of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The following detailed description of the specific embodiments of the present application in conjunction with the accompanying drawings will make the technical solutions and other beneficial effects of the present application apparent.

[0034] Figure 1 A flowchart of a method for manufacturing a display panel provided in an embodiment of the present application;

[0035] Figures 2A to 2I for Figure 1 The structural process flow chart of panel production is shown in the figure. DETAILED DESCRIPTION

[0036] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise specified, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; and "inside" and "outside" refer to the outline of the device.

[0037] The present application provides a method for manufacturing a display panel. Detailed descriptions are provided below. It should be noted that the order in which the following embodiments are described does not limit the preferred order of the embodiments.

[0038] See also Figures 1 to 2I , an embodiment of the present application provides a method for manufacturing a display panel, the manufacturing method comprising the following steps:

[0039] Step S100: providing a substrate 10, including providing a base plate 11, and an anode pattern 31 and a photoresist layer 41 stacked on the base plate 11, wherein in a direction perpendicular to the base plate 11, an orthographic projection of the photoresist layer 41 is located within an orthographic projection of the anode pattern 31;

[0040] Step S200: forming a pixel definition layer 51 on the substrate 10;

[0041] Step S300: Patterning the pixel definition layer 51, opening 510 corresponding to the photoresist layer 41 on the pixel definition layer 51, and removing the photoresist layer 41 in the opening 510 to expose the anode pattern 31, wherein the opening 510 includes an opening close to one side of the substrate 11, and the orthographic projection of the photoresist layer 41 in a direction perpendicular to the substrate 11 overlaps with the first opening.

[0042] Step 400 : forming a light-emitting functional layer 60 , a cathode layer 70 and an encapsulation layer 80 in sequence on the anode pattern 31 .

[0043] It can be understood that in the prior art, an organic light emitting diode (OLED) display has an anode pattern, a pixel definition layer, a light emitting functional layer and a cathode formed in sequence on a substrate, wherein the pixel definition layer includes a plurality of openings and a plurality of dams, the side walls of the plurality of dams enclose a plurality of openings, one opening corresponds to one anode pattern, and the light emitting functional layer is located in the opening. In the existing production process of the pixel definition layer, an organic photoresist material is usually coated, exposed, developed and baked on the anode pattern to obtain a pixel definition layer, wherein the pixel definition layer is provided with an opening at a position corresponding to the anode pattern. At this time, some organic photoresist material will remain on the upper surface of the anode pattern. Due to the properties of the organic photoresist material itself, the residual organic photoresist material is hydrophobic and is not easily washed by water or dissolved by a developer, and then adheres to the anode, resulting in the subsequent organic functional ink material being unable to spread, thereby forming a tailing phenomenon, affecting the display effect of the display panel.

[0044] In the embodiment of the present application, a photoresist layer 41 is provided on the anode pattern 31 before forming the pixel definition layer 51. Thus, during the process of forming the opening 510 of the pixel definition layer 51, even if some pixel definition layer 51 material remains in the opening 510, it can be removed together with the photoresist layer 41. This avoids the phenomenon in the prior art that some photoresist material remains on the upper surface of the anode pattern 31 when manufacturing the pixel definition layer 51, thereby improving the display effect and performance of the display panel.

[0045] The technical solution of this application is now described in conjunction with specific embodiments.

[0046] Please combine Figure 1 ,and Figures 2A to 2I ;in, Figure 1 A flowchart of a method for manufacturing a display panel provided in an embodiment of the present application; Figures 2A to 2I for Figure 1 The structural process flow chart of panel production is shown in the figure.

[0047] This embodiment provides a method for manufacturing a display panel, the method comprising the following steps:

[0048] Step S100: providing a base 10, including providing a substrate 11, and an anode pattern 31 and a photoresist layer 41 stacked on the substrate 11, wherein in a direction perpendicular to the substrate 11, the orthographic projection of the photoresist layer 41 is located within the orthographic projection of the anode pattern 31.

[0049] It should be noted that the direction perpendicular to the substrate 11 is the first direction. This embodiment takes the first direction as the Y direction as an example to illustrate the technical solution of the present application.

[0050] In this embodiment, step S100 includes the following steps:

[0051] Step S101: providing a substrate 10, including providing a substrate 11, and a base 12, a light shielding layer 13 and a buffer layer 14 sequentially formed on the substrate 11, such as Figure 2A shown.

[0052] The substrate 11 may include a rigid material or a flexible material. When the material of the substrate 11 is a rigid material, the material of the substrate 11 may be metal or glass. When the material of the substrate 11 is a flexible material, the material of the substrate 11 may include at least one of acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, polyurethane-based resin, cellulose resin, silicone resin, polyimide-based resin, and polyamide-based resin. Preferably, in this embodiment, the material of the substrate 11 is glass.

[0053] The light-shielding layer 13 can be prepared by a physical vapor deposition (PVD) process. Specifically, a metal film layer is deposited on the side of the substrate 12 away from the base plate 11, and a photoresist film layer is coated on the side of the metal film layer away from the substrate 12. After exposure and development, a light-shielding layer pattern is formed, and finally, the light-shielding layer 13 is formed by a wet etching process. The material of the metal film layer includes but is not limited to molybdenum (Mo), aluminum (Al), copper (Cu) and / or titanium (Ti). Preferably, the material of the metal film layer is molybdenum-titanium alloy (MoTi), and the thickness of the metal film layer is 1000 angstroms.

[0054] The buffer layer 14 can be made on the side of the light shielding layer 13 away from the substrate 12 by chemical vapor deposition (CVD). The material of the buffer layer 14 includes but is not limited to silicon nitride (SiN X ), titanium dioxide (TiO2) and silicon oxide (SiO X ), preferably, the material of the buffer layer 14 is silicon oxide, and the thickness of the buffer layer 14 is 400 angstroms.

[0055] Step S102: forming an active layer 21, a first insulating layer 22, a first metal layer 23, a second insulating layer 24 and a second metal layer 25 on the buffer layer 14 in sequence. Figure 2B shown.

[0056] The active layer 21 can be formed on the side of the buffer layer 14 away from the substrate 12 by using a physical vapor deposition process, and the material of the active layer 21 includes but is not limited to indium gallium zinc oxide (IGZO); the first insulating layer 22 is a gate 23A insulating layer, and the first insulating layer 22 can be formed on the side of the active layer 21 away from the buffer layer 14 by using a physical vapor deposition process. The first insulating layer 22 has strong water and oxygen barrier and insulation capabilities, and its material includes but is not limited to silicon oxide (SiO X ), silicon nitride (SiN X ), silicon oxynitride (SiNO), etc. or a stack thereof; the first metal layer 23 includes a gate 23A, and the material of the first metal layer 23 includes but is not limited to conductive materials such as molybdenum (Mo), aluminum (Al), copper (Cu) and / or titanium (Ti), and may include a single layer or multiple layers of the above materials, wherein the active layer 21, the gate insulating layer and the gate 23A are arranged corresponding to each other.

[0057] The second insulating layer 24 is an interlayer insulating layer. The second insulating layer 24 can be formed on the side of the gate 23A away from the gate insulating layer by using a physical vapor deposition process. The second insulating layer 24 has strong water and oxygen barrier and insulation capabilities. Its materials include but are not limited to silicon oxide (SiO X ), silicon nitride (SiN X ), silicon oxynitride (SiNO), etc. or a stack thereof; wherein, in this embodiment, the active layer 21 includes a source contact region (not marked in the figure) and a drain contact region (not marked in the figure), and a channel region (not marked in the figure) located between the source contact region and the drain contact region, and the orthographic projection of the gate 23A on the active layer 21 is located within the orthographic projection of the channel region.

[0058] In the step S102, the following steps are also included:

[0059] Step S1021 : patterning the second insulating layer 24 to form a first via hole (not marked in the figure) that partially exposes the active layer 21 . The first via hole is located above the source contact region and the drain contact region of the active layer 21 .

[0060] Step S1022: Form the second metal layer 25 on the second insulating layer 24 by physical vapor deposition. The material of the second metal layer 25 includes but is not limited to conductive materials such as molybdenum (Mo), aluminum (Al), copper (Cu) and / or titanium (Ti), and may include a single layer or multiple layers of the above materials.

[0061] Step S1023: Patterning the second metal layer 25 to form a source electrode 25A and a drain electrode 25B that are spaced apart, wherein the source electrode 25A contacts the source contact area of the active layer 21 through the first via hole, and the drain electrode 25B contacts the drain contact area of the active layer 21 through the first via hole; wherein, the second metal layer 25 is preferably patterned by yellow light and wet etching.

[0062] Step S103: forming a passivation layer 26 and a planarization layer 27 in sequence on the side of the second metal layer 25 away from the second insulating layer 24, as shown in FIG. Figure 2C shown.

[0063] The material of the passivation layer 26 includes but is not limited to silicon oxide, silicon nitride, silicon oxynitride, etc. or a stack thereof. The preparation method of the passivation layer 26 includes but is not limited to vapor deposition.

[0064] Furthermore, in step S103, the following steps are also included:

[0065] A yellow light is used to form a second via hole 26A on the passivation layer 26 and a third via hole 27A on the planar layer 27. The second via hole 26A is connected to the third via hole 27A, and the angle between the side wall of the second via hole 26A and the substrate 10 is equal to the angle between the side wall of the third via hole 27A and the substrate 10. The second via hole 26A and the third via hole 27A are located above the source electrode 25A or the drain electrode 25B. Preferably, in this embodiment, the second via hole 26A and the third via hole 27A are located above the drain electrode 25B and expose a portion of the drain electrode 25B.

[0066] Step S104 : forming an anode layer 30 on a side of the planar layer 27 away from the passivation layer 26 , wherein the anode layer 30 is connected to the drain electrode 25B through the second via hole 26A and the third via hole 27A.

[0067] Specifically, an anode material is deposited on the flat layer 27. The anode material includes but is not limited to conductive materials such as indium tin oxide (ITO) and silver (Ag), and may include a single layer or multiple layers of the above materials. For example, the anode material is a three-layer structure of indium tin material (ITO)-silver (Ag)-indium tin material (ITO).

[0068] Step S105: forming a photoresist material layer 40 on the anode layer 30; specifically, the photoresist material layer 40 can be made on the anode layer 30 by a coating method, and the material of the photoresist material layer 40 includes but is not limited to a hydrophilic photoresist material. Furthermore, the material of the photoresist material layer 40 is a positive photoresist material or a negative photoresist material.

[0069] Step S106: Patterning the photoresist material layer 40 to obtain the photoresist layer 41; it should be noted that this embodiment does not impose any specific restrictions on the method for patterning the photoresist material layer 40. It is known from the prior art that by patterning the photoresist material layer 40, a photoresist layer 41 having a mask pattern can be obtained, and the mask pattern includes but is not limited to a photoresist completely retained portion and a photoresist completely removed portion. This embodiment does not impose any specific restrictions on this.

[0070] Step S107: Using the photoresist layer 41 as an anti-etching layer, the anode layer 30 is etched to obtain an anode pattern 31. Figure 2D wherein the anode pattern 31 can be defined by yellow light and wet etching.

[0071] Step S108 : performing patterning on the photoresist layer 41 , so that the orthographic projection of the photoresist layer 41 is located within the orthographic projection of the anode pattern 31 in a direction perpendicular to the substrate 11 .

[0072] Specifically, in this embodiment, step S108 includes the following steps:

[0073] Step S1081: Expose the photoresist layer 41 to form a step portion 411 on the circumference of the photoresist layer 41 along a horizontal direction parallel to the photoresist layer 41. Figure 2E It should be noted that, in this embodiment, the horizontal direction parallel to the photoresist layer 41 is the second direction. This embodiment takes the second direction as the X direction as an example to illustrate the technical solution of the present application.

[0074] Specifically, in this embodiment, a half-tone mask process (HalfToneMask) can be used to expose the photoresist layer 41, and a step portion 411 can be formed on the peripheral side of the photoresist layer 41 along the second direction Y; further, after the photoresist layer 41 is exposed using a half-tone mask process (HalfToneMask), the photoresist layer 41 having a mask pattern can be obtained, and the mask pattern includes a photoresist completely reserved area 1000, and a photoresist semi-reserved area 2000 arranged around the photoresist completely reserved area 1000, and the step portion 411 is located in the photoresist semi-reserved area 2000.

[0075] Step S1082: etching the photoresist layer 41 to remove the step portion 411 and expose a portion of the anode pattern 31 on the periphery of the photoresist layer 41. Figure 2F As shown; specifically, in this embodiment, the photoresist layer 41 can be etched by a dry etching method, wherein the thickness of the photoresist layer 41 is less than 2 microns, thereby avoiding the subsequent deposition of the pixel definition layer 51 material on the photoresist layer 41 being too thick, thereby affecting the thickness of the pixel definition layer 51.

[0076] It should be noted that, in this embodiment, when the material of the photoresist layer 41 is a positive photoresist material, the step S108 further includes the following steps:

[0077] Step S1083: performing exposure processing on the photoresist layer 41 to ensure that the positive photoresist material can be dissolved in the developer in the subsequent manufacturing process.

[0078] It is understandable that when the material of the photoresist layer 41 is a negative photoresist material, there is no need to perform exposure processing on the photoresist layer 41, thereby saving the manufacturing cost of the display panel.

[0079] Step S200 : forming a pixel definition layer 51 on the substrate 10 .

[0080] Specifically, in this embodiment, step S200 includes the following steps:

[0081] Step S201: forming a photoresist material on the substrate 10, the anode pattern 31 and the photoresist layer 41, such as Figure 2G As shown; specifically, the photoresist material can be formed on the substrate 10, the anode pattern 31 and the photoresist layer 41 by a coating method. The photoresist material includes but is not limited to an organic photoresist material. The organic photoresist material is a special photoresist material widely used in the prior art and will not be described in detail in this embodiment.

[0082] Step S202 : performing exposure processing on the photoresist material to obtain the pixel definition layer 51 .

[0083] Step S300: Patterning the pixel definition layer 51, opening 510 corresponding to the photoresist layer 41 on the pixel definition layer 51, and removing the photoresist layer 41 in the opening 510 to expose the anode pattern 31, wherein the opening 510 includes an opening close to one side of the substrate 11, and the orthographic projection of the photoresist layer 41 in a direction perpendicular to the substrate 11 overlaps with the opening.

[0084] Specifically, in this embodiment, step S300 includes the following steps:

[0085] Step S301: exposing the pixel definition layer 51 to form a pixel definition layer pattern;

[0086] Step S302: Develop the pixel definition layer pattern, open the opening 510 corresponding to the anode pattern 31 on the pixel definition layer pattern, and remove the photoresist layer 41 in the opening 510, wherein the opening 510 includes a first opening (not marked in the figure) close to the substrate 11 and a second opening (not marked in the figure) away from the substrate 11, and the orthographic projection of the photoresist layer 41 in the direction perpendicular to the substrate 11 overlaps with the first opening, as shown in FIG. Figure 2H shown.

[0087] Step S303 : baking the pixel definition layer 51 and the anode pattern 31 . The pixel definition layer 51 can be solidified by baking, and the amorphous ITO in the anode pattern 31 can be converted into crystalline ITO.

[0088] It can be understood that, in this embodiment, by retaining the photoresist layer 41 when manufacturing the anode pattern 31, even if part of the pixel definition layer material remains in the opening 510 during the process of forming the pixel definition layer 51, it can be removed together with the photoresist layer 41, thereby avoiding the phenomenon in the prior art that part of the photoresist material remains on the upper surface of the anode pattern 31 when manufacturing the pixel definition layer 51, thereby improving the display effect of the display panel, and does not add additional manufacturing processes, and does not increase the manufacturing cost of the display panel; and, by setting the orthographic projection of the photoresist layer 41 in the direction perpendicular to the substrate 11 Overlapping with the first opening can ensure that the photoresist layer 41 is completely removed without causing any impact on the anode pattern 31, thereby improving the performance of the display panel; and, the photoresist layer 41 is exposed through a half-tone mask process (HalfToneMask), and a step portion 411 is formed on the peripheral side of the photoresist layer 41 along a horizontal direction parallel to the photoresist layer 41. The photoresist layer 41 is etched by a dry etching method, so that the pixel definition layer 51 covers the anode pattern 31 in the photoresist semi-reserved area 2000, thereby preventing water and oxygen from invading from the peripheral side of the anode pattern 31, thereby improving the stability of the display panel.

[0089] Continuing from the above, this embodiment also sets the material of the photoresist layer 41 to a hydrophilic photoresist material, and when the material of the photoresist layer 41 is a positive photoresist material, the photoresist layer 41 is exposed to light, thereby ensuring that when the pixel definition layer 51 is provided with an opening 510, the photoresist layer 41 can be dissolved in a developer, thereby removing the residual pixel definition layer 51 material on the surface of the photoresist layer 41, thereby improving the cleanliness of the surface of the anode pattern 31, reducing residue, and making it easier to spread the printed light-emitting layer evenly.

[0090] It should be noted that, in this embodiment, the method for manufacturing the display panel further includes:

[0091] Step S400: forming a light-emitting functional layer 60, a cathode layer 70 and an encapsulation layer 80 on the anode pattern 31 in sequence. Figure 2I As shown; wherein, the encapsulation layer 80 covers the cathode layer 70 and the pixel definition layer 51.

[0092] In summary, the present application provides a method for manufacturing a display panel, the method comprising providing a substrate, including providing a substrate, and an anode pattern and a photoresist layer stacked on the substrate, wherein in a direction perpendicular to the substrate, the orthographic projection of the photoresist layer is located within the orthographic projection of the anode pattern; forming a pixel definition layer on the substrate; patterning the pixel definition layer, opening an opening corresponding to the photoresist layer on the pixel definition layer, and removing the photoresist layer in the opening to expose the anode pattern, wherein the opening includes a hole near one side of the substrate. An opening is formed, and the orthographic projection of the photoresist layer in a direction perpendicular to the substrate overlaps with the opening; a light-emitting functional layer, a cathode layer and an encapsulation layer are sequentially formed on the anode pattern; in this embodiment, the photoresist layer is provided on the anode pattern before the pixel definition layer is manufactured, so that in the process of forming the pixel definition layer opening, even if part of the pixel definition layer material remains in the opening, it can be removed together with the photoresist layer when removing the photoresist layer, thereby avoiding the phenomenon in the prior art that part of the photoresist material remains on the upper surface of the anode pattern when the pixel definition layer is manufactured, thereby improving the display effect and performance of the display panel.

[0093] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0094] The above is a detailed introduction to a method for manufacturing a display panel provided in an embodiment of the present application. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for manufacturing a display panel, characterized in that: The following steps are involved: A substrate is provided, comprising a base plate, and an anode pattern and a photoresist layer stacked on the base plate, wherein the photoresist layer is patterned so that an orthographic projection of the photoresist layer is located within an orthographic projection of the anode pattern in a direction perpendicular to the base plate, wherein the step of patterning the photoresist layer comprises: exposing the photoresist layer to form a step portion on a peripheral side of the photoresist layer in a direction parallel to a horizontal plane of the photoresist layer; and etching the photoresist layer to remove the step portion and expose a portion of the anode pattern on the peripheral side of the photoresist layer; forming a pixel definition layer on the substrate; performing a patterning process on the pixel definition layer, opening an opening corresponding to the photoresist layer on the pixel definition layer, and removing the photoresist layer in the opening to expose the anode pattern, wherein the opening includes an opening close to a side of the substrate, and an orthographic projection of the photoresist layer in a direction perpendicular to the substrate overlaps with the opening; A light-emitting functional layer, a cathode layer and an encapsulation layer are sequentially formed on the anode pattern.

2. The production method according to claim 1, characterized in that The step of providing a substrate includes providing a base plate, and laminating an anode pattern and a photoresist layer on the base plate, wherein the orthographic projection of the photoresist layer is located within the orthographic projection of the anode pattern in a direction perpendicular to the base plate. providing a substrate, and forming an anode layer on the substrate; forming a photoresist material layer on the anode layer; performing patterning on the photoresist material layer to obtain the photoresist layer; The photoresist layer is used as an anti-etching layer to etch the anode layer to obtain an anode pattern.

3. The production method according to claim 2, characterized in that: The material of the photoresist material layer is a hydrophilic photoresist material.

4. The production method according to claim 1, characterized in that The photoresist layer is exposed using a half-tone mask process.

5. The production method according to claim 1, characterized in that: The photoresist layer is etched by dry etching.

6. The production method according to claim 1, characterized in that: The material of the photoresist layer is a positive photoresist material, and the step of patterning the photoresist layer so that the orthographic projection of the photoresist layer is located within the orthographic projection of the anode pattern in a direction perpendicular to the substrate further includes: The photoresist layer is exposed.

7. The production method according to claim 1, characterized in that: The step of forming a pixel definition layer on the substrate comprises: forming a photoresist material on the substrate; The photoresist material is exposed to light to obtain the pixel definition layer.

8. The production method according to claim 7, characterized in that: The step of patterning the pixel definition layer, forming an opening corresponding to the photoresist layer on the pixel definition layer, and removing the photoresist layer in the opening to expose the anode pattern, wherein the opening includes an opening close to a side of the substrate, and the orthographic projection of the photoresist layer in a direction perpendicular to the substrate overlaps with the opening comprises: exposing the pixel definition layer to form a pixel definition layer pattern; The pixel definition layer pattern is developed, the opening corresponding to the anode pattern is opened on the pixel definition layer pattern, and the photoresist layer in the opening is removed to expose the anode pattern.

9. The production method according to claim 1, characterized in that: The thickness of the photoresist layer is less than 2 microns.

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