A high-throughput synchrotron radiation light generating device

Abstract

The present invention relates to a high-flux synchrotron radiation light generating device, comprising an ultrafast laser, a modulation system, a radiation system, a modulation elimination system and a phase feedback system, wherein the modulation system, the radiation system and the modulation elimination system are arranged in sequence along the transmission direction of the electron beam and are located in the same vertical plane, the ultrafast laser injects a first ultrafast laser and a second ultrafast laser into the modulation system and the modulation elimination system respectively, and the phase feedback system is connected to the ultrafast laser. The high-flux synchrotron radiation light generating device of the present invention generates a micro-bunch of extreme ultraviolet to X-ray wavelength scale in the electron beam through the modulation system, generates high-flux radiation light through the radiation system, and restores the electron beam to an initial state after emitting light through the modulation elimination system, so as to realize the reuse of the electron beam and high repetition frequency light emission.

Description

Technical Field

[0001] The present invention relates to the field of synchrotron radiation light sources, and more specifically to a high-flux synchrotron radiation light generating device. Background Art

[0002] The electron storage ring synchrotron radiation source has gone through three generations of development and evolution, and is currently developing towards the fourth generation - diffraction-limited storage ring with higher brightness and better lateral coherence. Synchrotron radiation sources based on storage rings have now become one of the most important large-scale scientific platforms to support multidisciplinary basic and applied research. The third and fourth generation synchrotron radiation sources have many advantages such as wide spectral coverage, stable pulse energy and support for multi-user operation. However, since the storage ring synchrotron radiation source is based on the spontaneous radiation of the electron beam, the brightness is not high, the pulse length is long, and there is no longitudinal coherence.

[0003] Free electron lasers based on linear accelerators are internationally recognized as a new generation of advanced light sources. Free electron lasers have ultra-high peak brightness, ultra-short pulse structure and good coherence, as well as a wide spectral coverage range and the ability to continuously adjust wavelengths. The emergence of extreme ultraviolet and X-ray light sources with high temporal, spatial and energy resolutions provides unprecedented tools for detecting ultrafast evolution of microstructures. However, compared with storage ring synchrotron radiation sources, the electron beams in free electron lasers cannot be reused, and the repetition frequency of radiation pulses is low. If the repetition frequency is to be increased, high-repetition-rate electron guns and superconducting linear accelerator technology are required, which greatly increases the cost, technical difficulty and operating cost of the device. In addition, free electron laser devices can generally only supply light to a limited number of user lines at the same time, which also limits their scope of application to a certain extent.

[0004] Storage ring light sources have low peak brightness but high repetition rate, while free electron lasers have high peak brightness but low repetition rate. If the advantages of storage rings and free electron lasers can be combined to achieve micro-bunching in the electron beam of the storage ring, the radiation brightness can be 2 to 6 orders of magnitude higher than spontaneous radiation even without a gain process. The concept of combining storage rings with free electron lasers has been developed for many years, but there is still a lack of effective implementation solutions. The difficulty lies in how to generate micro-bunching on the scale of extreme ultraviolet and X-ray wavelengths in the storage ring, and how to restore the electron beam to its initial state after emitting light, that is, how to eliminate modulation to achieve electron beam reuse and high repetition rate emission. Summary of the invention

[0005] The object of the present invention is to provide a high-flux synchrotron radiation light generating device, which performs electron beam modulation and modulation elimination based on the angular dispersion mechanism to achieve high average flux extreme ultraviolet and X-ray radiation.

[0006] The present invention provides a high-flux synchrotron radiation light generating device, comprising an ultrafast laser, a modulation system, a radiation system, a modulation elimination system and a phase feedback system, wherein the modulation system, the radiation system and the modulation elimination system are arranged in sequence along the electron beam transmission direction and are located in the same vertical plane, the modulation system is configured to receive an electron beam and form a micro-bunch in the electron beam, the ultrafast laser injects a first ultrafast laser and a second ultrafast laser into the modulation system and the modulation elimination system respectively, the radiation system is configured to receive an electron beam from the modulation system and amplify a clustering signal in the electron beam to generate full coherent radiation in an extreme ultraviolet to X-ray band, the modulation elimination system is configured to receive the electron beam of the radiation system and eliminate the micro-bunch in the electron beam, and the phase feedback system is connected to the ultrafast laser and configured to control and feedback the phases of the first ultrafast laser and the second ultrafast laser in the modulation system and the modulation elimination system.

[0007] Furthermore, the phase feedback system is configured to make the phase difference between the two lasers π, including:

[0008] A high-precision laser phase detector, configured to accurately measure the relative phase of the first ultrafast laser and the second ultrafast laser; and

[0009] The phase shifter is configured to adjust the relative phase of the first ultrafast laser and the second ultrafast laser according to the measured relative phase to maintain the relative phase relationship between the first ultrafast laser and the second ultrafast laser.

[0010] Furthermore, the modulation system includes a transverse dispersion generation system, a first modulation undulator and a bunching section which are sequentially arranged along the electron beam transmission direction.

[0011] Furthermore, the modulation elimination system includes a reverse bunching section, a second modulation undulator and a lateral dispersion elimination system which are sequentially arranged along the electron beam transmission direction.

[0012] Furthermore, the transverse dispersion generating system is composed of two first dipole irons with opposite vertical directions and three first quadrupole irons in between, and the bunching section is composed of two second dipole irons with opposite vertical directions and three second quadrupole irons in between.

[0013] Furthermore, the radiation system includes a first radiation undulator arranged in sequence along the electron beam transmission direction, a double dipole iron achromatic structure composed of two unidirectional horizontal third dipole irons and five third quadrupole irons in the middle, and a second radiation undulator; the reverse bunching section is composed of two reverse vertical fourth dipole irons and three fourth quadrupole irons in the middle, and the lateral dispersion elimination system is composed of two reverse vertical fifth dipole irons and three fifth quadrupole irons in the middle.

[0014] Furthermore, the lateral dispersion generating system is composed of a sixth dipole iron in a vertical direction, the bunching section is composed of a seventh dipole iron in the opposite direction to the lateral dispersion generating system and a DBA structure consisting of two seventh quadrupole irons, one eighth dipole iron, three eighth quadrupole irons, one ninth dipole iron and two ninth quadrupole irons arranged in sequence, the radiation system includes a third radiation undulator, the reverse bunching section is composed of five twelfth pole irons arranged in sequence, and the lateral dispersion elimination system is composed of an eleventh pole iron in the opposite direction to the lateral dispersion generating system.

[0015] Furthermore, the modulation system includes a third modulation undulator and a first dispersion generating system composed of a twelfth dipole iron, the radiation system is composed of a plurality of fourth radiation undulators and an eleventh quadrupole iron therebetween, the modulation elimination system includes a first dispersion elimination system and a fourth modulation undulator arranged in sequence along the electron beam transmission direction, and the first dispersion elimination system is composed of a thirteenth dipole iron in the opposite direction to the first dispersion generating system.

[0016] Furthermore, the modulation system includes a lateral matching segment composed of two twelfth quadrupoles, a fifth modulation undulator and a second dispersion generating system composed of a fourteenth dipole, the radiation system includes a plurality of fifth radiation undulators and a thirteenth quadrupole therebetween, the modulation elimination system includes a second dispersion elimination system and a sixth modulation undulator, and the second dispersion elimination system is composed of a fifteenth dipole in the opposite direction to the second dispersion generating system.

[0017] Furthermore, the modulation system includes a seventh modulation undulator and a third dispersion generating system arranged in sequence along the electron beam transmission direction, the third dispersion generating system is composed of a fifteenth quadrupole iron and a sixteenth dipole iron, and a drift segment is formed between the fifteenth quadrupole iron and the sixteenth dipole iron, the radiation system includes a sixth radiation undulator arranged in sequence along the electron beam transmission direction, a DBA structure composed of two identical seventeenth dipole irons and five sixteenth quadrupole irons in between, and a seventh radiation undulator, the modulation elimination system includes a third dispersion elimination system and an eighth modulation undulator arranged in sequence along the electron beam transmission direction, the third dispersion elimination system is composed of a seventeenth quadrupole iron and an inverse vertical eighteenth dipole iron.

[0018] The high-flux synchrotron radiation light generating device of the present invention generates a micro-bunch of extreme ultraviolet to X-ray wavelength scales in an electron beam through a modulation system, generates high-flux radiation light through a radiation system, and restores the electron beam to an initial state after emitting light through a modulation elimination system, so as to realize the reuse of the electron beam and high repetition frequency luminescence. The high-flux synchrotron radiation light generating device of the present invention is composed of components such as a dipole iron, a quadrupole iron, an ultrafast laser and an undulator, and has low cost, low technical difficulty and low operating cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is a structural block diagram of a high-flux synchrotron radiation light generating device according to an embodiment of the present invention;

[0020] Figure 2 is a schematic structural diagram of a high-flux synchrotron radiation light generating device according to a first embodiment of the present invention;

[0021] Figure 3 is a schematic structural diagram of a high-flux synchrotron radiation light generating device according to a second embodiment of the present invention;

[0022] Figure 4 is a schematic structural diagram of a high-flux synchrotron radiation light generating device according to a third embodiment of the present invention;

[0023] Figure 5 is a schematic structural diagram of a high-flux synchrotron radiation light generating device according to a fourth embodiment of the present invention;

[0024] Figure 6 is a schematic structural diagram of a high-flux synchrotron radiation light generating device according to a fifth embodiment of the present invention;

[0025] Figures 7A-7C Schematic diagram of the generation and elimination of micro-bunching of electron beams at different positions in the structure of a high-flux synchrotron radiation light generating device according to an embodiment of the present invention, wherein: Fig. 7A shows the initial state of the electron beam, Figure 7B It shows the state of micro-bunching after the modulation system. Figure 7C It shows the state of the electron beam after passing through the radiation system and the modulation elimination system. DETAILED DESCRIPTION

[0026] The preferred embodiments of the present invention are given below in conjunction with the accompanying drawings and described in detail.

[0027] like Figure 1As shown, the present invention provides a high-flux synchrotron radiation light generating device, which performs modulation and modulation elimination of electron beams based on an angular dispersion mechanism, is installed at the exit of a high-energy linear beam adder in a synchrotron radiation device, comprises an ultrafast laser 1, a modulation system 2, a radiation system 3, a modulation elimination system 4 and a phase feedback system 5, wherein the electron beam is a high-energy electron beam generated by the synchrotron radiation device, the modulation system 2, the radiation system 3 and the modulation elimination system 4 are arranged in sequence along the transmission direction of the electron beam and are located in the same vertical plane, the modulation system 2 is configured to receive the electron beam and form a micro-bunch in the electron beam, and the laser pulses generated by the ultrafast laser 1 are (not shown in the figure) divided into a first path of ultrafast laser 1 and a second path of ultrafast laser 1. 1 and a second ultrafast laser 12, which are respectively in the same direction as the electron beams in the modulation system 2 and the modulation elimination system 4 and are injected into the modulation system 2 and the modulation elimination system 4 at the same time, the radiation system 3 is configured to receive the electron beam with micro-bunching, the radiation system 3 resonates with the higher harmonics of the first ultrafast laser 11, and uses the micro-bunching in the electron beam to generate fully coherent radiation in the extreme ultraviolet to X-ray band; the modulation elimination system 4 is configured to receive the electron beam in the radiation system 3 and eliminate the micro-bunching therein to restore it to the initial state of the electron beam; the phase feedback system 5 is interconnected with the ultrafast laser 1, and is used to control and feedback the phase of the laser pulse in the modulation system 2 and the modulation elimination system 4.

[0028] The electron beam restored to its initial state can be reused to generate coherent radiation. Since the repetition rate of the electron beam in the storage ring can reach up to 100 MHz, under ideal circumstances, the repetition rate of the coherent radiation pulse can be adjusted between 1-100 MHz.

[0029] The arrangement of the high-flux synchrotron radiation light generating device is in a mirror-symmetrical structure along the horizontal center line of the radiation system 3, which is beneficial to the design and debugging of the entire device.

[0030] The phase feedback system 5 is configured to make the phase difference between the two lasers be π to achieve the purpose of energy modulation and elimination of energy modulation. It includes a high-precision laser phase detector and a phase shifter. The relative phase of the first ultrafast laser 11 and the second ultrafast laser 12 is accurately measured by the high-precision laser phase detector. At the same time, the relative phase of the first ultrafast laser 11 and the second ultrafast laser 12 is adjusted according to the measured relative phase by the feedback algorithm and the phase shifter to maintain the relative phase relationship between the first ultrafast laser 11 and the second ultrafast laser 12.

[0031] Figure 2 and Figure 3 The high-flux synchrotron radiation light generating device according to the first embodiment and the second embodiment of the present invention. Figure 2 and Figure 3As shown, the modulation system 2 of the high-flux synchrotron radiation light generating device includes a transverse dispersion generating system 21, a first modulation undulator 22 and a bunching section 23 which are arranged in sequence along the transmission direction of the electron beam. The transverse dispersion generating system 21 is configured to receive the electron beam and introduce transverse dispersion and angular dispersion therein, the first modulation undulator 22 is configured to receive the electron beam from the transverse dispersion generating system 21 and generate energy modulation therein, and the bunching section 23 is configured to receive the electron beam from the first modulation undulator 22 and generate transverse dispersion and longitudinal dispersion therein, so as to form a micro-bunch in the electron beam.

[0032] The modulation elimination system 4 includes a reverse focusing section 41, a second modulation undulator 42 and a transverse dispersion elimination system 43 which are arranged in sequence along the transmission direction of the electron beam. The reverse focusing section 41 is configured to receive the electron beam from the radiation system 3 and generate transverse dispersion and longitudinal dispersion therein, and the generated transverse dispersion and longitudinal dispersion are equal in magnitude and opposite in direction to the transverse dispersion and longitudinal dispersion generated in the transverse dispersion generating system 21; the second modulation undulator 42 is configured to receive the electron beam from the reverse focusing section 41 and the second ultrafast laser 12, and generate energy modulation in the electron beam in the opposite direction to that in the first modulation undulator 22; the transverse dispersion elimination system is configured to receive the electron beam from the second modulation undulator 42, and eliminate the transverse dispersion and angular dispersion introduced in the transverse dispersion generating system 21, so that the electron beam is restored to the initial state of the electron beam.

[0033] Specifically, Figure 2 As shown, according to the first embodiment of the present invention, the lateral dispersion generation system 21 of the high-flux synchrotron radiation light generating device is composed of two first dipole irons 211 with opposite vertical directions and three first quadrupole irons 212 in the middle, and the focusing section 23 is composed of two second dipole irons 231 with opposite vertical directions and three second quadrupole irons 232 in the middle. By optimizing various parameters of the lateral dispersion generation system 21, the first modulation undulator 22 and the focusing section 23, the first-order linear transmission matrix (yz plane) of the modulation system 2 can be expressed by the following formula:

[0034]

[0035] where t 1 and η 1 are the angular dispersion and the dispersion of the transverse dispersion generating system 21, t 2 and η 2 are the angular dispersion and dispersion of the bunching section 23. Multiple micro bunches will be generated in the electron beam, and the spacing between the micro bunches is the wavelength of the first ultrafast laser 11. The length of the micro bunches is much smaller than the wavelength of the first ultrafast laser 11, and its specific value is determined by the angular dispersion and dispersion strength of the bunching section 23 and the initial transverse parameters of the electron beam.

[0036] The radiation system 3 includes a first radiation undulator 31 arranged in sequence along the transmission direction of the electron beam, a double dipole iron dispersion-free structure (DBA) 32 composed of two unidirectional horizontal third dipole irons 321 and five third quadrupole irons 322 in the middle, and a second radiation undulator 33. The electron beam from the bunching section 23 can emit high-order harmonic radiation of the wavelength of the first ultrafast laser 11 when passing through the first radiation undulator 31, and the radiation flux and brightness are proportional to the number of electrons in the micro-bunch; after continuing to pass through the DBA32, the electron beam can continue to emit light in the second radiation undulator 33, and then the electron beam passes through the reverse bunching section 41 composed of two reverse vertical fourth dipole irons 411 and three fourth quadrupole irons 412 in the middle to eliminate the dispersion introduced by the bunching section 23. The intensity of the fourth dipole iron 411 is the same as that of the second dipole iron 231, but the direction is opposite. The electron beam then passes through the second modulation undulator 42 to eliminate energy modulation. Finally, the electron beam passes through the transverse dispersion elimination system 43 composed of two reverse vertical fifth diode irons 431 and three fifth quadrupole irons 432 in the middle to eliminate the transverse dispersion introduced by the transverse dispersion generating system 21, so as to restore the electron beam to the state before light emission (i.e., the state of the electron beam).

[0037] In this embodiment, the electron beam and the first ultrafast laser 11 are simultaneously injected into the first modulated undulator 22 , and the electron beam and the second ultrafast laser 12 are simultaneously injected into the second modulated undulator 42 , and the relative phases of the two lasers are precisely controlled by the phase feedback system 5 .

[0038] In this embodiment, a plurality of sixth quadrupole irons 600 are placed before the transverse dispersion generating system 21 and after the transverse dispersion eliminating system 43 to perform transverse matching of the electron beam and assist the transmission of the electron beam.

[0039] like Figure 3 As shown, according to the second embodiment of the present invention, the lateral dispersion generating system 21 of the high-flux synchrotron radiation light generating device is composed of a sixth dipole iron in a vertical direction, the focusing section 23 is composed of a seventh dipole iron 233 in the opposite direction to the lateral dispersion generating system 21 and a DBA structure consisting of two seventh quadrupole irons 234, one eighth dipole iron 235, three eighth quadrupole irons 236, one ninth dipole iron 237 and two ninth quadrupole irons 238 arranged in sequence, the reverse focusing section 41 is composed of five twelfth pole irons 413 arranged in sequence, and the lateral dispersion elimination system 43 is composed of an eleventh dipole iron in the opposite direction to the lateral dispersion generating system 21.

[0040] In this embodiment, a number of fourteenth pole irons 601 are placed before the transverse dispersion generation system 21 and after the transverse dispersion elimination system 43 to facilitate transverse matching of the electron beam and assist in the transmission of the electron beam. The electron beam then passes through the transverse dispersion generation system 21, the first modulation undulator 22 and the bunching section 23 in sequence. The first-order linear transmission matrix (yz plane) of the modulation system 2 composed of the above components can be expressed by the following formula:

[0041]

[0042] Wherein, θ is the vertical dipole deflection angle, L is the length of the first modulation undulator 22, and ξ* is the longitudinal displacement of the energy-biased particles of the DBA structure. By optimizing the above parameters, the electron beam will generate the same strong micro-bunching as in the first embodiment.

[0043] Then the electron beam enters the radiation system 3, which includes a third radiation undulator. When passing through the third radiation undulator, the electron beam can emit high-order harmonic radiation with the same characteristics as the high-flux synchrotron radiation light generating device of the first embodiment.

[0044] Afterwards, the electron beam passes through the reverse focusing section 41 to eliminate the dispersion introduced by the focusing section 23, and then passes through the second modulation undulator 42 and the transverse dispersion elimination system 43 to eliminate the energy modulation introduced by the first modulation undulator 22 and the dispersion introduced by the transverse dispersion generation system 21, so that the electron beam is basically restored to the state before emitting light. The method of injecting the electron beam and the ultrafast laser into the first modulation undulator and the second modulation undulator is the same as that of the high-flux synchrotron radiation light generating device of the first embodiment.

[0045] Figure 4 FIG. 4 shows a high-flux synchrotron radiation light generating device according to a third embodiment of the present invention. Figure 4 As shown, the modulation system 2 of the high-flux synchrotron radiation light generating device includes a third modulation undulator 24 and a first dispersion generating system 25 composed of a twelfth diode. The angle between the laser and the electron beam and the diode deflection angle of the first dispersion generating system 25 are both θ. The first-order linear transmission matrix (yz plane) of the modulation system 2 can be expressed by the following formula:

[0046]

[0047] Among them, L b and η are respectively the length and dispersion of the twelfth diode of the first dispersion generating system 25. By optimizing various parameters of the first dispersion generating system 25 and the third modulation undulator 24, the electron beam will generate strong micro bunching similar to that of the first embodiment.

[0048] Then the electron beam enters the radiation system 3, and can emit high harmonic radiation with the same characteristics as the first embodiment when passing through the radiation system 3. The radiation system 3 is composed of a plurality of fourth radiation undulators 34 and eleventh quadrupole irons 35 between the fourth radiation undulator segments.

[0049] The modulation elimination system 4 includes a first dispersion elimination system 44 and a fourth modulation undulator 45 arranged in sequence along the transmission direction of the electron beam. The first dispersion elimination system 44 is composed of a thirteenth dipole iron in the opposite direction to the first dispersion generation system 25. The electron beam passes through the first dispersion elimination system 44 to eliminate the dispersion introduced by the first dispersion generation system 25, and then passes through the fourth modulation undulator 45 to eliminate the energy modulation and angle modulation introduced by the third modulation undulator 24, and the electron beam returns to the state before emitting light. The way in which the electron beam and the ultrafast laser are injected into the undulator is the same as that of the high-flux synchrotron radiation light generating device of the first embodiment.

[0050] like Figure 5 The figure shows a high-flux synchrotron radiation light generating device according to the fourth embodiment of the present invention. According to the fourth embodiment of the present invention, the modulation system 2 of the high-flux synchrotron radiation light generating device includes a lateral matching section 26 composed of two twelfth quadrupole irons, a fifth modulation undulator 27, and a second dispersion generating system 28 composed of a fourteenth dipole iron. The ultrafast laser acting on the electron beam is in TEM01 mode, and the first-order linear transmission matrix (yz plane) of the modulation system 2 can be expressed by the following formula:

[0051]

[0052] Where a, b, c and d are matrix elements in the lateral matching section 26, which satisfy ad-cb=1, L b and η are respectively the length and dispersion intensity of the fourteenth dipole iron of the second dispersion generating system 28. By optimizing the parameters of the second dispersion generating system 28, the fifth modulation undulator 27 and the lateral matching section 26, the electron beam will generate the same strong micro-bunching as the high-flux synchrotron radiation light generating device of the first embodiment.

[0053] Then the electron beam enters the radiation system 3, and can emit high harmonic radiation with the same characteristics as the first embodiment when passing through the radiation system 3. The radiation system 3 is composed of a plurality of fifth radiation undulators 36 and a thirteenth quadrupole iron 37 between the fifth radiation undulator segments.

[0054] The modulation elimination system 4 includes a second dispersion elimination system 46 and a sixth modulation undulator 47. The second dispersion elimination system 46 is composed of a fifteenth diode iron in the opposite direction to the second dispersion generation system 28. The electron beam passes through the second dispersion elimination system 46 to eliminate the dispersion introduced by the second dispersion generation system 28, and then passes through the sixth modulation undulator 47 to eliminate the energy modulation and angle modulation introduced by the fifth modulation undulator 27. The electron beam and the ultrafast laser are injected into the fifth and sixth modulation undulators in the same manner as the high-flux synchrotron radiation light generating device of the first embodiment.

[0055] In this embodiment, a number of fourteenth quadrupole irons 602 are placed after the modulation elimination system 4 to perform lateral matching of the electron beam and assist the electron beam transmission.

[0056] Figure 6 FIG. 5 shows a high-flux synchrotron radiation light generating device according to a fifth embodiment of the present invention. Figure 6 As shown, in the fifth embodiment, the modulation system 2 of the high-flux synchrotron radiation light generating device includes a seventh modulation undulator 210 and a third dispersion generating system 220 arranged in sequence along the electron beam transmission direction, and the third dispersion generating system 220 is composed of a fifteenth quadrupole iron and a sixteenth dipole iron, and a drift section is formed between the fifteenth quadrupole iron and the sixteenth dipole iron. In the seventh modulation undulator 210, two laser beams tilted at the same angle are used to modulate the electron beam, and the first-order linear transmission matrix (yz plane) of the modulation system can be expressed by the following formula:

[0057]

[0058] Wherein, L is the length of the drift segment between the fifteenth quadrupole and the sixteenth dipole, L b is the sixteenth dipole iron length, t and η are the dipole iron magnet deflection angle and dispersion intensity, respectively. By optimizing the parameters of the third dispersion generation system 220 and the seventh modulation undulator 210, the electron beam will generate the same strong micro-bunching as in the first embodiment. In addition, compared with the single-beam tilted laser modulation in the high-flux synchrotron radiation light generating device in the fourth embodiment, in this embodiment, the double-tilted laser modulation used in the high-flux synchrotron radiation light generating device can generate twice the angular modulation depth, and the required laser power can be further reduced.

[0059] The radiation system 3 includes a sixth radiation undulator 310, a DBA structure 320 composed of two identical seventeenth dipole irons and five sixteenth quadrupole irons in between, and a seventh radiation undulator 330 arranged in sequence. After passing through the sixth radiation undulator 310, the electron beam can emit high-order harmonic radiation of a laser wavelength, and then continue to emit light in the seventh radiation undulator 330 after passing through the DBA structure 320 in sequence.

[0060] The modulation elimination system 4 includes a third dispersion elimination system 410 and an eighth modulation undulator 420 arranged in sequence, and the third dispersion elimination system 410 is composed of a seventeenth quadrupole iron and an inverse vertical eighteenth dipole iron. The electron beam passes through the third dispersion elimination system 410 to eliminate the dispersion introduced by the third dispersion generation system 220, and then passes through the eighth modulation undulator 420 to eliminate the energy modulation of the seventh modulation undulator 210, so that the electron beam is restored to the state before light emission. The way in which the electron beam and the ultrafast laser are injected into the seventh and eighth modulation undulators is the same as that of the high-flux synchrotron radiation light generating device according to the first embodiment of the present invention.

[0061] Figures 7A-7C Schematic diagram of the generation and elimination of micro-bunching of electron beams at different positions in the structure of the high-flux synchrotron radiation light generating device according to the first to fifth embodiments of the present invention, wherein: Fig. 7A shows the initial state of the electron beam, Figure 7B It shows the state of micro-bunching after the modulation system. Figure 7C The figure shows the state of the electron beam after passing through the radiation system and the modulation elimination system. Figures 7A-7C As shown in the figure, the horizontal axis is the longitudinal position of the electron in the bunch, and the vertical axis is the lateral divergence angle of the electron beam. After passing through the modulation system 2, the electron beam can effectively form a micro-bunch of short wavelength scale, which can be used to generate short wavelength coherent radiation, and after passing through the modulation elimination system, the electron beam can basically return to its initial state for the next light emission.

[0062] The high-flux synchrotron radiation light generating device provided in the embodiment of the present invention generates a micro-bunch of extreme ultraviolet to X-ray wavelength scales in the electron beam through the modulation system 2, generates high-flux radiation light through the radiation system, and restores the electron beam to its initial state after emitting light through the modulation elimination system 3, so as to realize the reuse of the electron beam and high repetition frequency light emission; the high-flux synchrotron radiation light generating device of the present invention is composed of components such as a dipole iron, a quadrupole iron, an ultrafast laser and an undulator, and has low cost, low technical difficulty and low operating cost.

[0063] The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. The above embodiment of the present invention can also be modified in various ways. That is, all simple, equivalent changes and modifications made according to the claims and the description of the present invention fall within the scope of protection of the claims of the present invention. The contents not described in detail in the present invention are all conventional technical contents.

Claims

1. A high-flux synchrotron radiation light generating device, characterized in that: The invention comprises an ultrafast laser, a modulation system, a radiation system, a modulation elimination system and a phase feedback system, wherein the modulation system, the radiation system and the modulation elimination system are arranged in sequence along the transmission direction of the electron beam and are located in the same vertical plane, the modulation system is configured to receive the electron beam and form a micro bunch in the electron beam, the ultrafast laser injects a first ultrafast laser and a second ultrafast laser into the modulation system and the modulation elimination system respectively, the radiation system is configured to receive the electron beam from the modulation system and amplify the clustering signal in the electron beam to generate full coherent radiation in the extreme ultraviolet to X-ray bands, the modulation elimination system is configured to receive the electron beam of the radiation system and eliminate the micro bunch in the electron beam, and the phase feedback system is connected to the ultrafast laser and configured to control and feedback the phases of the first ultrafast laser and the second ultrafast laser in the modulation system and the modulation elimination system; The phase feedback system is configured to make the phase difference between the two lasers π, and includes: A high-precision laser phase detector, configured to accurately measure the relative phase of the first ultrafast laser and the second ultrafast laser; and a phase shifter configured to adjust the relative phase of the first ultrafast laser and the second ultrafast laser according to the measured relative phase, so as to maintain the relative phase relationship between the first ultrafast laser and the second ultrafast laser; The modulation system comprises a transverse dispersion generation system, a first modulation undulator and a bunching section which are sequentially arranged along the electron beam transmission direction; The modulation elimination system comprises a reverse bunching section, a second modulation undulator and a transverse dispersion elimination system which are sequentially arranged along the electron beam transmission direction; The transverse dispersion generation system is composed of two first dipole irons with opposite vertical directions and three first quadrupole irons in between; the transverse dispersion elimination system is composed of two fifth dipole irons with opposite vertical directions and three fifth quadrupole irons in between.

2. The high-flux synchrotron radiation light generating device according to claim 1, characterized in that: The bunching section is composed of two second dipole irons with opposite vertical directions and three second quadrupole irons in the middle.

3. The high-flux synchrotron radiation light generating device according to claim 2, characterized in that: The radiation system includes a first radiation undulator arranged in sequence along the electron beam transmission direction, a double dipole iron achromatic structure composed of two unidirectional horizontal third dipole irons and five third quadrupole irons in the middle, and a second radiation undulator; the reverse bunching section is composed of two reverse vertical fourth dipole irons and three fourth quadrupole irons in the middle.

4. The high-flux synchrotron radiation light generating device according to claim 1, characterized in that: The lateral dispersion generating system is replaced by a sixth dipole iron in a vertical direction, the bunching section is composed of a seventh dipole iron in the opposite direction to the lateral dispersion generating system and a DBA structure consisting of two seventh quadrupole irons, one eighth dipole iron, three eighth quadrupole irons, one ninth dipole iron and two ninth quadrupole irons arranged in sequence, the radiation system includes a third radiation undulator, the reverse bunching section is composed of five twelfth pole irons arranged in sequence, and the lateral dispersion elimination system is replaced by an eleventh pole iron in the opposite direction to the lateral dispersion generating system.

5. The high-flux synchrotron radiation light generating device according to claim 1, characterized in that: The modulation system is replaced by a first dispersion generating system including a third modulation undulator and a twelfth dipole iron, the radiation system is composed of a plurality of fourth radiation undulators and an eleventh quadrupole iron therebetween, and the modulation elimination system is replaced by a first dispersion elimination system and a fourth modulation undulator arranged in sequence along the electron beam transmission direction, and the first dispersion elimination system is composed of a thirteenth dipole iron in the opposite direction to the first dispersion generating system.

6. The high-flux synchrotron radiation light generating device according to claim 1, characterized in that: The modulation system is replaced by a lateral matching segment consisting of two twelfth quadrupoles, a fifth modulation undulator and a second dispersion generating system consisting of a fourteenth dipole; the radiation system includes several fifth radiation undulators and a thirteenth quadrupole therebetween; the modulation elimination system is replaced by a second dispersion elimination system and a sixth modulation undulator; the second dispersion elimination system is composed of a fifteenth dipole in the opposite direction to the second dispersion generating system.

7. The high-flux synchrotron radiation light generating device according to claim 1, characterized in that: The modulation system is replaced by a seventh modulation undulator and a third dispersion generating system arranged in sequence along the transmission direction of the electron beam, the third dispersion generating system consisting of a fifteenth quadrupole and a sixteenth dipole, a drift segment is formed between the fifteenth quadrupole and the sixteenth dipole, the radiation system includes a sixth radiation undulator arranged in sequence along the transmission direction of the electron beam, a DBA structure consisting of two identical seventeenth dipoles and five sixteenth quadrupoles in between, and a seventh radiation undulator, the modulation elimination system is replaced by a third dispersion elimination system and an eighth modulation undulator arranged in sequence along the transmission direction of the electron beam, the third dispersion elimination system consisting of a seventeenth quadrupole and an inverse vertical eighteenth dipole.

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