Manufacturing apparatus and manufacturing method for semiconductor devices

Abstract

A manufacturing apparatus and a manufacturing method of a semiconductor device, which can further improve parallelism of a chip with respect to a substrate. The manufacturing apparatus of a semiconductor device includes: a stage; a mounting head having a chip holding surface, which configures a chip on a substrate; a measuring mechanism, which measures a tilt angle of a chip placed on a mounting surface of the substrate by the mounting head with respect to the mounting surface as a detected tilt angle Sd; a holding surface adjusting mechanism, which changes a holding surface tilt angle Sb, which is a tilt angle of the chip holding surface with respect to the placement surface; and a controller, which calculates a correction amount C of the holding surface tilt angle Sb based on the detected tilt angle Sd, and changes the holding surface tilt angle Sb using the holding surface adjusting mechanism according to the calculated correction amount C.

Description

TECHNICAL FIELD

[0001] The present specification relates to a manufacturing apparatus and a manufacturing method for manufacturing a semiconductor device by bonding one or more chips to a substrate. BACKGROUND

[0002] Conventionally, a manufacturing apparatus for manufacturing a semiconductor device by mounting one or more chips on a substrate is known. The manufacturing apparatus has a mounting tool that suction-holds a chip, and moves the mounting tool to position the chip at a desired position when the chip is positioned on the substrate. Further, it is important that a bonding surface of the chip facing the substrate is parallel to a mounting surface of the substrate when the chip is positioned on the substrate. If the chip is tilted with respect to the mounting surface, a mounting defect occurs between the chip and the substrate. For example, an electrical bonding defect can occur between a bump electrode of the chip and an electrode of the substrate.

[0003] Here, Patent Literature 1 discloses that, when an Integrated Circuit (IC) component is temporarily pressed against an electrode provided on a flat panel display, a camera is used to detect a positional displacement of the mounted IC component with respect to the electrode, and in a case where the positional displacement is not appropriate, the positional displacement is fed back to correct a temporary pressing operation of the next IC component. Further, Patent Literature 1 also discloses that a bonding state of a bump and the electrode is detected, and in a case where the bonding state is not appropriate, it is determined that the parallelism of the IC component with respect to the display exceeds an allowable range, and a warning is output. According to the technology of Patent Literature 1, the positional displacement is appropriately detected and fed back, and thus the positioning accuracy of the IC component can be maintained high.

[0004] PRIOR ART DOCUMENTS

[0005] PATENT LITERATURE

[0006] Patent Literature 1: Japanese Patent No. 3323395 SUMMARY

[0007] PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] However, in the technology of Patent Literature 1, only whether the parallelism is good or not is determined, and no feedback is performed. Therefore, in the prior art such as Patent Literature 1, it is not possible to maintain the parallelism of the chip with respect to the substrate high.

[0009] Therefore, in the present specification, a manufacturing apparatus of a semiconductor device is disclosed, which can further improve the parallelism of a chip with respect to a substrate.

[0010] TECHNICAL MEANS FOR SOLVING THE PROBLEMS

[0011] The manufacturing apparatus for a semiconductor device disclosed in this specification includes a stage having a placement surface on which a substrate is placed; a mounting head having a chip holding surface that holds a chip, and that arranges the chip on the substrate placed on the stage; a measurement mechanism that measures a detection tilt angle of the chip placed on a mounting surface of the substrate by the mounting head with respect to the mounting surface; a holding surface adjustment mechanism that changes a holding surface tilt angle that is a tilt angle of the chip holding surface with respect to the placement surface; and a controller that calculates a correction amount of the holding surface tilt angle based on the detection tilt angle, and changes the holding surface tilt angle using the holding surface adjustment mechanism according to the calculated correction amount.

[0012] At this time, the controller can also store a plurality of the detection tilt angles measured in the past, and the controller can calculate a basic tilt angle from which the influence of the correction of the holding surface tilt angle is removed from each of the plurality of detection tilt angles, and change the calculation strategy of the correction amount according to a variation tendency of the basic tilt angle between substrates.

[0013] Further, the controller can also calculate, as the correction amount, a value that cancels out the detection tilt angle obtained for a nearest substrate, in a case where a deviation of the basic tilt angle between substrates is equal to or less than a prescribed allowable value.

[0014] Further, the controller can also calculate, as the correction amount, a value that cancels out a basic tilt angle of a next substrate, in a case where the basic tilt angle varies with a predetermined regularity between substrates.

[0015] Further, the controller can also calculate, as the correction amount, a value that cancels out a basic tilt angle of a next substrate, in a case where the basic tilt angle varies randomly between substrates.

[0016] Further, the controller can also regard a representative value of a plurality of detection tilt angles obtained for a plurality of chips placed on one substrate as the detection tilt angle of the one substrate, in a case where the detection tilt angle is obtained for each of the plurality of chips placed on the one substrate.

[0017] Further, the controller can also generate a map that records a correspondence relationship between a position of each chip within the substrate and the detection tilt angle of each chip, based on the map, and calculate the correction amount for each chip position, in a case where the detection tilt angle is obtained for each of a plurality of chips placed on one substrate.

[0018] Moreover, the mounting head can have a mounting tool including the chip holding surface, and a spherical air bearing holding the mounting tool, the spherical air bearing being switchable between a free state holding the mounting tool in a state permitting rocking thereof, and a locked state holding the mounting tool in a state obstructing rocking thereof, the holding surface adjustment mechanism having a tilt plate for the chip holding surface to abut against, and a plurality of support columns supporting the tilt plate, the support columns being independently advanced and retracted to arbitrarily change the angle of the tilt plate.

[0019] The manufacturing method of a semiconductor device disclosed in this specification includes a bonding step of holding a chip with a chip holding surface of a mounting tool, moving the mounting tool, and placing the chip on a mounting surface of a substrate that has been placed on a placement surface of a stage; a measurement step of measuring an upper surface of the chip placed on the mounting surface and a tilt angle of the mounting surface as a detected tilt angle; a correction amount calculation step of calculating a correction amount of a holding surface tilt angle based on the detected tilt angle, the holding surface tilt angle being a tilt of the chip holding surface with respect to the stage; and a correction step of changing the holding surface tilt angle by a holding surface adjustment mechanism that changes the holding surface tilt angle, according to the correction amount.

[0020] Effects of the Invention

[0021] According to the technology disclosed in this specification, the parallelism of a chip with respect to a substrate can be further improved. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 is an image showing the structure of the manufacturing apparatus.

[0023] Figure 2 is an image showing the structure of the holding surface adjustment mechanism.

[0024] Figure 3A is an image showing the state of the bonding process of the chip.

[0025] Figure 3B is an image showing the state in which the holding surface tilt angle is corrected.

[0026] Figure 4 is a flowchart showing the manufacturing flow of a semiconductor device performed by the manufacturing apparatus of this example.

[0027] Figure 5 is a graph showing an example of the change of various parameters in the case where the process is performed according to the flow of Figure 4

[0028] Figure 6A is a graph showing an example of the change tendency of the basic tilt angle.

[0029] ​Figure 6B FIG. 2 is a graph showing another example of the change tendency of the basic tilt angle.

[0030] Figure 6C FIG. 2 is a graph showing another example of the change tendency of the basic tilt angle.

[0031] Figure 7 FIG. 4 is a flowchart showing a detailed flow of the correction amount calculation step.

[0032] Figure 8 FIG. 5 is a flowchart showing another example of the manufacturing flow of the semiconductor device.

[0033] Figure 9 FIG. 6 is an image showing the deviation condition of each position of the detected tilt angle.

[0034] [Explanation of Symbols]

[0035] 10: manufacturing device

[0036] 12: stage

[0037] 14: mounting head

[0038] 16: measurement mechanism

[0039] 18: holding surface adjustment mechanism

[0040] 20: controller

[0041] 21: placement surface

[0042] 22: mounting tool

[0043] 23: main body

[0044] 26: chip holding surface

[0045] 28: spherical air bearing

[0046] 30: laser measurer

[0047] 34: tilt plate

[0048] 36: support column

[0049] 38: processor

[0050] 40: memory

[0051] 100: chip

[0052] 102: bump

[0053] 110: substrate

[0054] 112: mounting surface

[0055] 114: electrode DETAILED DESCRIPTION

[0056] Hereinafter, the structure of the manufacturing apparatus 10 of a semiconductor device will be described with reference to the drawings. Figure 1 Fig. 1 is a diagram showing the structure of the manufacturing apparatus 10. The manufacturing apparatus 10 is an apparatus for manufacturing a semiconductor device by mounting a chip 100 as an electronic component on a substrate 110 in a face down state. The manufacturing apparatus 10 includes a stage 12 on which the substrate 110 is placed, a mounting head 14 that mounts the chip 100 on the substrate 110, a measuring mechanism 16 that measures the parallelism of the mounted chip 100 with respect to the substrate 110, a holding surface adjusting mechanism 18 that changes the inclination of a chip holding surface 26 of the mounting head 14, and a controller 20 that controls the driving of the mounting head 14 or the holding surface adjusting mechanism 18.

[0057] The stage 12 can suction-hold the substrate 110, and a heater (not shown) for warming the substrate 110 is built in the stage 12. The warming and suction of the stage 12 are controlled by the controller 20 described later. The upper surface of the stage 12 functions as a placement surface 21 on which the substrate 110 is placed. Further, the stage 12 of this example is a fixed stage whose position in the vertical direction and the horizontal direction is constant, but depending on the case, the stage 12 can be made movable in at least one of the vertical direction and the horizontal direction.

[0058] The mounting head 14 includes a mounting tool 22 that suction-holds the chip 100, and a moving mechanism (not shown) that moves the mounting tool 22 in the horizontal direction and the vertical direction. The mounting tool 22 is disposed so as to face the substrate 110, and the top end surface thereof functions as a chip holding surface 26 that suction-holds the chip 100. Further, a heater (not shown) for warming the held chip 100 is built in the mounting tool 22. After the chip 100 is suction-held by the chip holding surface 26, the mounting tool 22 places the chip 100 on the surface (hereinafter referred to as "mounting surface 112") of the substrate 110, and performs pressure and heating, thereby bonding the chip 100 to the substrate 110.

[0059] Further, the mounting head 14 of the present example has a spherical air bearing 28. The spherical air bearing 28 has a fixed portion 28a and a movable portion 28b, one of which has a concave semisphere and the other of which has a convex semisphere that slides inside the concave semisphere. The oscillation of the movable portion 28b with respect to the fixed portion 28a is controlled by suction or supply of air to the gap between them. That is, the three-dimensional oscillation of the movable portion 28b with respect to the fixed portion 28a is allowed by supplying air to the gap, and is inhibited by suction of air from the gap. Hereinafter, the state in which the movable portion 28b is allowed to oscillate by supply of air is referred to as a "free state", and the state in which the movable portion 28b is inhibited from oscillating by suction of air is referred to as a "locked state". In the present example, the movable portion 28b of the spherical air bearing 28 is attached to the mounting tool 22, and the fixed portion 28a is attached to the body 23 of the mounting head 14. At this time, after the spherical air bearing 28 is set to the free state, the chip holding surface 26 is pressed against the desired surface, whereby the chip holding surface 26 can be made parallel to the desired surface. In other words, by providing the spherical air bearing 28, the oscillation of the mounting tool 22 with respect to the body 23, and the inclination angle of the chip holding surface 26 with respect to the placement surface 21 (hereinafter referred to as a "holding surface inclination angle Sb") can be changed.

[0060] When mounting the chip 100 on the substrate 110, the mounting tool 22 is lowered toward the substrate 110 in the state in which the chip 100 is held by the chip holding surface 26, and the chip 100 is placed on the mounting surface 112 of the substrate 110. Next, the chip 100 is heated and pressed in the state, whereby the bumps 102 (see FIG. 2) provided on the bottom surface of the chip 100 are soldered to the electrodes 114 (see FIG. 2) of the substrate 110. Figure 3A , Figure 3B ) of the chip 100 are soldered to the electrodes 114 (see Figure 3A , Figure 3B ) of the substrate 110.

[0061] The measuring mechanism 16 measures the mounting state of the chip 100 on the substrate 110, particularly the inclination angle of the chip 100 with respect to the mounting surface 112. The measured inclination angle of the chip 100 is sent to the controller 20 as a detected inclination angle Sd. The controller 20 corrects the holding surface inclination angle Sb based on the obtained detected inclination angle Sd, and regarding this, will be described below.

[0062] The method of measuring the detection tilt angle Sd is not particularly limited, and for example, a contact type tilt sensor or a non-contact type distance sensor or the like can be used for measurement. For example, in the case of using a laser distance meter 30 that measures a distance in a non-contact manner, the laser distance meter 30 measures distances to a plurality of substrate-side measurement points provided on the mounting surface 112 and distances to a plurality of chip-side measurement points provided on the upper surface of the chip 100. Next, the measurement mechanism 16 calculates the tilt angle of the mounting surface 112 based on the distances to the plurality of substrate-side measurement points, calculates the tilt angle of the upper surface of the chip 100 based on the distances to the plurality of chip-side measurement points, and calculates the tilt angle of the chip 100 with respect to the mounting surface 112, that is, the detection tilt angle Sd, from the two tilt angles. Furthermore, the method of measuring the detection tilt angle Sd described here is an example, and can be appropriately changed.

[0063] The holding surface adjustment mechanism 18 is a mechanism that adjusts the tilt angle of the chip holding surface 26 with respect to the placement surface 21, that is, the holding surface tilt angle Sb. Specifically, the holding surface adjustment mechanism 18 has a tilt plate 34 that abuts against the chip holding surface 26. The tilt plate 34 is supported by a plurality of support columns 36 that can be arbitrarily advanced and retracted, and as shown in FIG. 4, the tilt angle of the tilt plate 34 can be changed by adjusting the protruding amount of an arbitrary support column 36. In the case of adjusting the holding surface tilt angle Sb, the support column 36 can be previously advanced and retracted, the tilt plate 34 can be adjusted to a desired tilt angle, and the mounting tool 22 can be set to a free state in which the mounting tool 22 is swingable with respect to the body 23. In this state, the chip holding surface 26 is brought into abutment with the tilt plate 34, and the chip holding surface 26 is brought into contact with the tilt plate 34. Furthermore, if the chip holding surface 26 is in complete contact with the tilt plate 34, the mounting tool 22 is switched to a locked state in which the mounting tool 22 is blocked from swinging. Thus, the holding surface tilt angle Sb is fixed at the same tilt angle as the tilt plate 34. Figure 2

[0064] The controller 20 controls the driving of each part of the manufacturing apparatus 10. Specifically, the controller 20 drives the mounting head 14 and performs a bonding process in which the chip 100 is bonded to the substrate 110. Furthermore, the controller 20 of the present example performs a correction process of the tilt of the chip holding surface 26 of the holding surface adjustment mechanism 18 as necessary, and regarding this, a description will be given below. Such a controller 20 is a computer that has a processor 38 that performs various calculations and a memory 40 that stores data and programs.

[0065] Next, the correction process of the holding surface tilt angle Sb will be described. As shown in FIG. 5, the controller 20 first acquires the detection tilt angle Sd of the chip 100 with respect to the mounting surface 112. The detection tilt angle Sd is measured by the measurement mechanism 16. The measurement mechanism 16 can be a commercially available product, and the measurement mechanism 16 can be a laser distance meter or the like that measures a distance in a non-contact manner. Figure 3A ​As shown, a bump 102 that functions as an electrode is formed on the bottom surface of the chip 100. When mounting the chip 100, the chip 100 is placed on the mounting surface 112 of the substrate 110 with the bump 102 contacting the electrode 114 of the substrate 110, and then the chip 100 is heated and pressed by the mounting tool 22. In order to ensure good mounting quality, the chip 100 must be kept parallel to the mounting surface 112 during the heating and pressing. If the chip 100 is not parallel to the mounting surface 112, electrical connection between the bump 102 and the electrode 114 can be poor.

[0066] Therefore, in the conventional manufacturing apparatus 10, the holding surface inclination angle Sb is adjusted so that the chip holding surface 26 is parallel to the placement surface 21 of the stage 12 before the chip 100 is mounted. Specifically, the chip holding surface 26 is pressed against the placement surface 21 so that the mounting tool 22 is in contact with the placement surface 21 before the chip 100 is mounted.

[0067] However, the conventional manufacturing apparatus 10 only adjusts the inclination of the mounting tool 22 with respect to the stage 12, and thus does not sufficiently ensure the parallelism of the chip 100 with respect to the mounting surface 112 of the substrate 110. For example, as shown, even if the chip holding surface 26 is adjusted to be parallel with respect to the placement surface 21, if the upper surface (mounting surface 112) of the substrate 110 is inclined with respect to the lower surface due to temperature changes or manufacturing errors of the substrate 110, etc., the chip 100 is inclined with respect to the mounting surface 112. Figure 3A

[0068] Therefore, in this example, the inclination angle of the chip 100 with respect to the mounting surface 112 is measured as a detected inclination angle Sd as needed, and the holding surface inclination angle Sb is corrected in such a way as to offset the detected inclination angle Sd. Figure 3B An image showing the corrected state.

[0069] In this example, the measurement of the detected inclination angle Sd and the correction of the holding surface inclination angle Sb are performed for each substrate 110. Referring to Figure 4 This will be explained. Figure 4 A flowchart showing the manufacturing process of a semiconductor device by the manufacturing apparatus 10 of this example.

[0070] In manufacturing a semiconductor device, first, the substrate 110 is carried to the stage 12 and placed (S10). Next, the mounting head 14 is driven to bond the chip 100 to the substrate 110. That is, the chip 100 is placed on a predetermined position of the substrate 110, and heated and pressed (S12). After a necessary number of chips 100 are bonded to one substrate 110, the bonded substrate 110 is carried to the measurement mechanism 16.

[0071] ​The measuring mechanism 16 measures the tilt angle of the chip 100 with respect to the mounting surface 112 as a detection tilt angle Sd, and transmits it to the controller 20 (S14). Here, in the case where a plurality of chips 100 are mounted on one substrate 110, the measuring mechanism 16 can measure the detection tilt angle Sd only for a representative one of the plurality of chips 100 (for example, a chip 100 mounted at the center of the substrate 110, etc.). Also, as another embodiment, the measuring mechanism 16 can measure the detection tilt angle Sd for each of the plurality of chips 100. At this time, the controller 20 takes a representative value of the plurality of detection tilt angles Sd obtained for one substrate 110 as the detection tilt angle Sd of the one substrate 110. Here, the "representative value" is a statistical value indicating the center position of the distribution of data, such as the average value or median value, the mode value. In either case, the controller 20 stores one detection tilt angle Sd corresponding to one substrate 110 in the memory 40.

[0072] After obtaining the detection tilt angle Sd, the controller 20 confirms whether or not there is a next substrate 110 (S16). If there is no next substrate 110 (No in S16), the manufacturing process ends. On the other hand, in the case where there is a next substrate 110 (Yes in S16), the controller 20 determines whether or not the holding surface tilt angle Sb needs to be corrected for the next substrate 110 on the basis of the detection tilt angle Sd (S18). Specifically, the controller 20 compares the obtained detection tilt angle Sd with a prescribed tilt allowance value. In the case where the comparison result is that the detection tilt angle Sd is equal to or less than the tilt allowance value, it is determined that the current holding surface tilt angle Sb is appropriate, and correction is not needed (No in S18). At this time, the controller 20 does not perform correction of the holding surface tilt angle Sb, and returns to step S20 to perform the bonding process for the next new substrate 110. On the other hand, in the case where the detection tilt angle Sd exceeds the tilt allowance value, the controller 20 determines that the holding surface tilt angle Sb needs to be corrected (Yes in S18). At this time, the controller 20 reduces the detection tilt angle Sd of the next time, and calculates a correction amount C such that the tilt angle of the chip 100 approaches the tilt angle of the mounting surface 112 (S20). The calculation of the correction amount C will be described below.

[0073] After calculating the correction amount C, the controller 20 uses the holding surface adjustment mechanism 18 to correct the holding surface tilt angle Sb (S22) with the correction amount C. Specifically, the advance and retraction of the support column 36 is adjusted to change the tilt plate 34 to a tilt angle corresponding to the correction amount C. Next, the mounting tool 22, which has been switched to a free state, is pressed against the tilt plate 34 so that the chip holding surface 26 is in contact with the tilt plate 34, and then the mounting tool 22 is switched to a fixed state. After this correction by the holding surface adjustment mechanism 18 is completed, the process returns to step S10 to install the chip 100 on the new substrate 110. Then, after all the necessary substrates 110 have been installed with the chips 100 (No in S16), the manufacturing process ends.

[0074] Thus, in this example, the tilt angle of the installed chip 100 relative to the mounting surface 112 is measured, and the measurement result is fed back to the next installation. As a result, the parallelism of the chip 100 relative to the mounting surface 112 can be further improved.

[0075] Next, the calculation of the correction amount C will be explained. The calculation order of the correction amount C is not particularly limited as long as it makes the detection tilt angle Sd of the next substrate 110 close to zero. In this example, the basic tilt angle Ss is calculated by removing the effect of the correction of the holding surface tilt angle Sb from the multiple detection tilt angles Sd obtained for multiple substrates 110. The calculation strategy of the correction amount C is changed according to the variation tendency of the basic tilt angle Ss between substrates.

[0076] Before providing a detailed explanation of the calculation of the correction amount C, refer to... Figure 5 The parameters used to calculate the correction amount C are explained. Figure 5 To indicate according to Figure 4 The diagram illustrates an example of the process of repeatedly mounting the chip 100 on four substrates 110, measuring the tilt angle Sd, and correcting the holding surface tilt angle Sb, showing the changes in various parameters. Furthermore, even when the holding surface tilt angle Sb is kept constant, the parallelism of the chip 100 relative to the mounting surface 112 still deviates between the substrates 110. The reasons for this parallelism deviation between substrates include various factors such as temperature or load variations, correction errors, and quality deviations of the substrates 110. Figure 5 These are collectively represented as the inclination of the mounting surface 112 of the substrate 110. Additionally, the... Figure 5 The tilt angle of the mounting surface 112 of the substrate 110 is the tilt angle after removing the effect of correction from the detection tilt angle Sd, and is the detection tilt angle Sd that can be obtained without any correction to the holding surface tilt angle Sb. Hereinafter, the detection tilt angle that can be obtained without correction ( Figure 5 The tilt angle of the mounting surface 112 in the middle is called the "basic tilt angle Ss".

[0077] In a case where the detection tilt angle Sd, the basic tilt angle Ss, the holding surface tilt angle Sb, and the correction amount C of the nth substrate 110 are set as Sd[n], Ss[n], Sb[n], and C[n], respectively, the holding surface tilt angle Sb[n] and the basic tilt angle Ss[n] of the nth substrate can be expressed by the following Expression 1 and Expression 2, respectively.

[0078] Sb[n] = Sb[n-1] + C[n] Expression 1

[0079] Ss[n] = Sb[n] - Sd[n] Expression 2

[0080] Figure 5 In the example of FIG. 6, in the stage of the first substrate 110, the correction of the holding surface tilt angle Sb is not performed once, and thus the correction amount C[1] = 0° and the holding surface tilt angle Sb[1] = 0°. At this time, in a case where the detection tilt angle Sd[1] = -5° is measured, the basic tilt angle Ss[1] = Sb[1] - Sd[1] = +5° can be calculated.

[0081] In order to cancel the detection tilt angle Sd[1] of the first substrate, the correction amount C[2] = -Sd[1] = +5° is set for the second substrate 110. At this time, in the second substrate 110, the holding surface tilt angle Sb[2] becomes Sb[2] = Sb[1] + C[2] = +5°. In addition, in a case where the detection tilt angle Sd[2] = -5° of the second substrate 110 is measured, the basic tilt angle Ss[2] of the second substrate 110 can be calculated as Ss[2] = Sb[2] - Sd[2] = +10°. As to the third substrate and the following, the basic tilt angle Ss[n] can be calculated based on the detection tilt angle Sd[n] in the same manner.

[0082] The controller 20 sequentially calculates the basic tilt angle Ss in accordance with Expression 1 and Expression 2, determines the change tendency of the basic tilt angle Ss among the substrates, and calculates the correction amount C in an order suitable for the change tendency. In this example, the change tendency is classified into three types of "small deviation", "regularity", and "random change". Figure 6A to Figure 6C FIGS. 7 to 9 are graphs for explaining the three types of change tendency. In each of the graphs, the horizontal axis represents the sample number n of the substrate 110, and the vertical axis represents the basic tilt angle Ss of the nth substrate 110.

[0083] As Figure 6AAs shown, when the deviations of the multiple basic tilt angles Ss are small, the causes of the tilt of the chip 100 relative to the mounting surface 112, such as temperature changes or substrate quality, are generally stable. Therefore, the controller 20 calculates the value that cancels out the nearest detected tilt angle Sd[n] as the correction amount C[n+1] for the next substrate 110. That is, the controller 20 performs the calculation C[n+1] = -Sd[n]. Furthermore, regarding the evaluation of deviations, for example, dispersion or standard deviation is used. Therefore, for example, the controller 20 calculates the standard deviation of the multiple basic tilt angles Ss, and when the standard deviation is below a predetermined allowable value, the correction amount C is calculated in the form of C[n+1] = -Sd[n].

[0084] On the other hand, such as Figure 6B As shown, when the basic tilt angle Ss changes with a predetermined regularity, it can be inferred that the cause of the tilt of the chip 100 relative to the mounting surface 112 also changes with a regularity. Therefore, the controller 20 calculates the basic tilt angle Ss[n+1] of the next substrate 110 according to the aforementioned regularity, and calculates the value that cancels out the basic tilt angle Ss[n+1] as the correction amount C of the next substrate 110. For example, consider the following case: when a and b are constants, the basic tilt angle Ss changes approximately according to a linear function of "Ss[n] = -a×n+b". In this case, it can be inferred that the basic tilt angle Ss[n+1] of the next substrate 110 is Ss[n+1] = a×(n+1)+b.

[0085] Furthermore, the detection tilt angle Sd[n+1] of the next substrate 110 is represented by Equation 3 below. In addition, the correction amount C[n+1] of the next substrate 110 is the value when the detection tilt angle Sd[n+1] is set to zero, and can therefore be obtained by Equation 4.

[0086] Sd[n+1]=Sb[n]+C[n+1]-Sd[n+1] Equation 3

[0087] C[n+1]=Sd[n+1]-Sb[n] Equation 4

[0088] Furthermore, whether the change is regular can be determined by calculating an approximate curve Ac for multiple basic tilt angles Ss, and judging based on the degree of approximation between the approximate curve Ac and the multiple basic tilt angles Ss. Here, the approximate curve Ac is not limited to a linear function as described above, but can also be a quadratic function, exponential function, logarithmic function, etc. Moreover, the degree of approximation can also be expressed, for example, as the mean square error between the approximate curve Ac and the multiple basic tilt angles Ss. That is, the controller 20 can also determine that the basic tilt angles Ss change regularly if the mean square error of the multiple basic tilt angles Ss relative to the approximate curve Ac is below a predetermined allowable value.

[0089] Next, as Figure 6C As shown, the case where the basic tilt angle Ss varies irregularly and randomly is explained, that is, the case where the mean square error of multiple basic tilt angles Ss relative to the approximate curve Ac exceeds the allowable value is explained. In this case, it can be inferred that the cause of the tilt of the chip 100 relative to the mounting surface 112 also varies randomly. At this time, the controller 20 estimates the representative value of the multiple basic tilt angles Ss as the basic tilt angle Ss[n+1] of the next substrate 110, and calculates the value that cancels it out as the correction amount C[n+1] of the next substrate 110. Here, the representative value is, for example, the average value, the center value, or the most frequent value. After estimating the representative value of the multiple basic tilt angles Ss as the basic tilt angle Ss[n+1] of the next substrate 110, the controller 20 substitutes it into Equation 4 to calculate the next correction amount C[n+1].

[0090] Figure 7 To represent the steps of calculating the correction amount ( Figure 4 The flowchart of step S20 is as follows. When the correction amount C is calculated, as described above, the basic tilt angle Ss of the N conventional substrates 110 is first calculated (S30). If the basic tilt angle Ss of the N conventional substrates can be calculated, then the deviation of the basic tilt angle Ss of the N conventional substrates, such as dispersion or standard deviation, is calculated next (S32). If the deviation of the basic tilt angle Ss is small, for example, if the standard deviation is below a specified allowable value (Yes in S34), the controller 20 calculates the value that cancels the nearest detected tilt angle Sd[n] as the correction amount C[n+1] for the next substrate 110 (S36).

[0091] On the other hand, if the deviation of the basic tilt angle Ss of the N plates is large (No in S34), the controller 20 calculates an approximate curve Ac of the basic tilt angle Ss of the N plates (S38). The approximate curve Ac calculated here can be any of a linear function, a quadratic function, an exponential function, or a logarithmic function. Moreover, the approximate curve Ac calculated here is not limited to one type and can be multiple types.

[0092] After the approximation curve Ac is calculated, the controller 20 next compares the approximation curve Ac with the N pieces of basic tilt angles Ss (S40). In a case where the approximation degree of the approximation curve Ac to the basic tilt angles Ss is large (Yes in S40), for example, in a case where the mean square error of the approximation curve Ac to the basic tilt angles Ss is below an allowable value, the controller 20 calculates the next basic tilt angle Ss[n+1] based on the approximation curve Ac (S42). Further, in a case where a plurality of approximation curves Ac are calculated in S38, as long as the Ss[n+1] is calculated based on the approximation curve Ac whose approximation degree is the largest among the plurality of approximation curves Ac. On the other hand, in a case where the approximation degree of the approximation curve Ac to the basic tilt angles Ss is small (No in S40), the controller 20 sets the representative value, for example, the average value, of the past N pieces of basic tilt angles Ss as the next basic tilt angle Ss[n+1] of the substrate 110 (S44). Next, after the next basic tilt angle Ss[n+1] of the substrate 110 is calculated, it is substituted into the equation 4 to calculate the correction amount C[n+1] of the next substrate 110 (S46).

[0093] As indicated by the above description, in this example, the calculation strategy of the correction amount C is changed according to the change tendency of the basic tilt angle Ss. Thereby, a more appropriate correction amount C can be calculated, and the parallelism of the chip 100 with respect to the mounting surface 112 can be further improved.

[0094] Further, the structure described so far is an example, and as long as the correction amount C of the holding surface tilt angle Sb is calculated based on the detected tilt angle Sd at least at a necessary timing, and the holding surface tilt angle Sb is changed according to the calculated correction amount C, other structures can also be appropriately changed. For example, in the description so far, the calculation strategy of the correction amount C is changed according to the change tendency of the basic tilt angle Ss. However, the calculation order of the correction amount C can also be appropriately changed. Therefore, for example, the value that cancels out the detected tilt angle Sd[n] of the nearest substrate 110 can be calculated as the correction amount C[n+1] of the next substrate 110 regardless of the change tendency of the basic tilt angle Ss.

[0095] Further, Figure 4 In the flowchart, the measurement of the detected tilt angle Sd and the correction of the holding surface tilt angle Sb are performed for each piece of the substrate 110 (S14 and S20, S22). However, the interval of the measurement of the detected tilt angle Sd and the correction of the holding surface tilt angle Sb can also be appropriately changed. Therefore, the measurement of the detected tilt angle Sd and the correction of the holding surface tilt angle Sb can be performed at a plurality of intervals or at a certain time interval. Further, the interval of the measurement of the detected tilt angle Sd and the interval of the correction of the holding surface tilt angle Sb need not be the same, and can be different from each other. For example, the measurement of the detected tilt angle Sd can be performed at a plurality of intervals, and the correction of the holding surface tilt angle Sb can be performed at a certain time interval. Figure 8As shown, the measurement of the tilt angle Sd (S14) is performed for each substrate 110, and the correction of the holding surface tilt angle Sb (S20, S22) is performed on a per-1max-piece basis. By adopting the above structure, the number of times the correction of the holding surface tilt angle Sb is performed can be reduced, and the tack time of semiconductor device manufacturing can be reduced.

[0096] Furthermore, in the description up to this point, the correction of the holding surface tilt angle Sb has been performed on a per-substrate basis (substrate 110). However, the correction of the holding surface tilt angle Sb can also be performed at each location within the substrate 110. For example, as... Figure 9 As shown, when the detection tilt angles Sd_a to Sd_c differ due to the positions Pa to Pc within the substrate 110, the controller 20 generates a mapping that records the positions Pa to Pc within the substrate 110 corresponding to their detection tilt angles Sd_a to Sd_c. Then, correction amounts C_a to C_c for each position Pa to Pc can be calculated based on this mapping, and the holding surface tilt angle Sb can be corrected for each position Pa to Pc. By adopting this structure, the parallelism of the chip 100 relative to the mounting surface 112 can be further improved.

[0097] Furthermore, in this example, the holding surface tilt angle Sb is changed by shaking the mounting tool 22. However, the holding surface tilt angle Sb can also be changed by shaking the platform 12 instead of the mounting tool 22. For example, the platform 12 can be supported by multiple retractable support columns, and the retraction amount of the support columns can be adjusted, thereby changing the tilt of the platform 12 and the tilt angle (i.e., the holding surface tilt angle Sb) of the chip holding surface 26 relative to the mounting surface 21.

Claims

1. A manufacturing apparatus of a semiconductor device, characterized by comprising: including: a stage having a placement surface on which a substrate is placed; a mounting head having a chip holding surface that holds a chip, the chip being arranged on the substrate placed on the stage; a measuring mechanism that measures a tilt angle of the chip placed on a mounting surface of the substrate by the mounting head with respect to the mounting surface as a detected tilt angle; a holding surface adjusting mechanism that includes a tilt plate that presses the chip holding surface, and drives the tilt plate to change a holding surface tilt angle that is a tilt angle of the chip holding surface with respect to the tilt plate of the stage; and a controller that calculates a correction amount of the holding surface tilt angle based on the detected tilt angle, and changes the holding surface tilt angle using the holding surface adjusting mechanism according to the calculated correction amount, the chip holding surface being pressed against the tilt plate whose holding surface tilt angle has been changed to change an angle of the chip holding surface.

2. The semiconductor device manufacturing apparatus according to claim 1, wherein the controller stores a plurality of the detected tilt angles measured in the past, the controller calculates a basic tilt angle from which the effect of correction of the holding surface tilt angle is removed from each of the plurality of detected tilt angles, and changes a calculation strategy of the correction amount based on a tendency of variation of the basic tilt angle from substrate to substrate.

3. The semiconductor device manufacturing apparatus according to claim 2, wherein the controller calculates, as the correction amount, a value that cancels out the detected tilt angle obtained for a substrate in the vicinity in a case where a variation of the basic tilt angle from substrate to substrate is within a prescribed allowable value.

4. The semiconductor device manufacturing apparatus according to claim 2 or 3, wherein the controller calculates, as the correction amount, a value that cancels out a basic tilt angle of a next substrate in a case where the basic tilt angle varies with a predetermined regularity from substrate to substrate.

5. The semiconductor device manufacturing apparatus according to claim 2 or 3, wherein the controller calculates, as the correction amount, a value that cancels out a basic tilt angle of a next substrate in a case where the basic tilt angle varies randomly from substrate to substrate.

6. The semiconductor device manufacturing apparatus according to any one of claims 1 to 3, wherein the controller regards a representative value of a plurality of the detected tilt angles obtained for a plurality of chips placed on one substrate as the detected tilt angle of the one substrate in a case where the detected tilt angle is obtained for each of the plurality of chips placed on the one substrate.

7. The semiconductor device manufacturing apparatus according to any one of claims 1 to 3, wherein the controller generates a map that records a correspondence between a position of each chip within the substrate and the detected tilt angle of each chip based on the detected tilt angle obtained for each of a plurality of chips placed on one substrate, and calculates the correction amount for each chip position based on the map. ​ 8. The apparatus according to any one of claims 1 to 3, characterized in that the mounting head has a mounting tool including the chip holding surface, and a spherical air bearing holding the mounting tool, the spherical air bearing is switchable between a free state in which the mounting tool is held in a state in which it is allowed to rock, and a locked state in which the mounting tool is held in a state in which it is prevented from rocking, the holding surface adjustment mechanism has: the inclined plate against which the chip holding surface abuts; and a plurality of support columns supporting the inclined plate and arbitrarily changing the angle of the inclined plate by advancing and retreating independently of each other.

9. A method for manufacturing a semiconductor device, characterized by comprises: a bonding step of holding a chip by a chip holding surface of a mounting tool, moving the mounting tool, and placing the chip on a mounting surface of a substrate that has been placed on a placement surface of a stage; a measurement step of measuring a tilt angle of an upper surface of the chip placed on the mounting surface and the mounting surface as a detected tilt angle; a correction amount calculation step of calculating a correction amount of a holding surface tilt angle that is a tilt angle of the chip holding surface with respect to an inclined plate of the stage, based on the detected tilt angle; and a correction step of changing the holding surface tilt angle according to the correction amount using a holding surface adjustment mechanism that changes the holding surface tilt angle, the holding surface adjustment mechanism includes the inclined plate that presses the chip holding surface, the holding surface adjustment mechanism drives the inclined plate to change the holding surface tilt angle, the chip holding surface is pressed against the inclined plate whose holding surface tilt angle has been changed to change the angle of the chip holding surface.

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