Conical semiconductor laser based on supersymmetry and its preparation method

Abstract

The present invention provides a tapered semiconductor laser based on supersymmetry and a preparation method thereof, wherein the tapered semiconductor laser based on supersymmetry includes a quantum epitaxial wafer substrate, a ridge waveguide, a tapered gain waveguide connected end to end with the ridge waveguide, and supersymmetric companion loss waveguides located on both sides of the tapered gain waveguide are prepared on the quantum epitaxial wafer substrate; wherein the ridge waveguide is used to generate near-diffraction-limited fundamental mode light; the tapered gain waveguide is used to amplify the fundamental mode light; the supersymmetric companion loss waveguide matches the phase mode of the tapered gain waveguide to form supersymmetric coupling, which is used to annihilate the high-order mode in the tapered gain waveguide. The present invention introduces a supersymmetric companion loss waveguide to annihilate the high-order mode generated in the tapered gain waveguide, thereby improving the fundamental mode light intensity and beam quality, increasing the cavity surface catastrophic damage threshold of the tapered device, obtaining a uniform near-field light intensity distribution, and realizing stable high-power near-diffraction-limited laser output.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor lasers, and in particular to a tapered semiconductor laser based on supersymmetry and a preparation method thereof. Background Art

[0002] High-power and high-beam-quality semiconductor lasers are indispensable equipment technologies in the fields of national defense and industry, and they also have important applications in medical, communications, lidar and other technical fields. The main difficulties in achieving high-power near-diffraction-limited semiconductor lasers are: the spatial mode in the waveguide is complex, the mode stability is poor, and the beam shaping system is complex when working at high power, which seriously limits the increase in output power and restricts the expansion of the application range. It cannot meet the needs of a new generation of small-volume, high-performance, and high-reliability light source pump sources. Therefore, how to achieve the regulation of beam quality while increasing the output power has become a core problem that needs to be solved in the field of high-power semiconductor lasers.

[0003] At present, a monolithically integrated master oscillator power amplifier is usually used to achieve high-power near-diffraction-limited lasing. The conical semiconductor laser includes a ridge waveguide region and a conical waveguide gain region. The ridge waveguide region is a master oscillator laser with low power output, and its main function is to provide output light of fundamental mode oscillation. The main function of the conical band gain region is to amplify the power of the fundamental mode light generated by the ridge waveguide region, thereby achieving high-power near-diffraction-limited output. The problem with conical semiconductor lasers is that when the power increases to a certain level, further increasing the injected current will induce nonlinear effects such as self-focusing effect and filament effect, and generate complex high-order modes in the conical waveguide gain region, resulting in uneven distribution of near-field spot and a sharp drop in beam quality, which in turn limits the further increase in the output power of the conical semiconductor laser; in severe cases, it will also cause optical catastrophic damage to the cavity surface, leading to device failure.

[0004] In order to solve the light field mode problem of high-power semiconductor lasers and improve the beam quality of the device, the commonly used methods are: introducing light leakage grooves etched through the active area on both sides of the ridge waveguide to leak high-order modes returning from the light-emitting cavity surface to the ridge waveguide area, so as to achieve the purpose of filtering out high-order modes in the cavity; constructing a graphic tailoring structure on the main waveguide to leak high-order modes. In addition, manufacturing photonic crystals with complex processes and high costs or introducing micro-nano gratings in the ridge waveguide area can also improve the beam quality of the device to a certain extent. For the problem of optical catastrophic damage to the cavity surface of the device under high-power output, a non-absorption window can be constructed through secondary epitaxy to increase the optical catastrophic damage threshold of the cavity surface and improve the stability and reliability of the device.

[0005] In the above commonly used methods, the light leakage grooves on both sides of the ridge waveguide are close to the ridge waveguide, and the etching needs to pass through the active layer, and the patterned loss trimming structure is located on the main waveguide structure. These two schemes have a certain degree of damage to the waveguide structure. While filtering out high-order modes, there is also loss to the fundamental mode. When the power is large and there are more light field modes in the waveguide, the mode selection effect becomes weaker, and high-order modes will still be generated in the waveguide. Therefore, these two schemes are methods with high loss, low yield and low stability. Photonic crystals, micro-nano gratings, non-absorption windows and other methods are indirectly improving the beam quality of the device, and do not fundamentally regulate the light field mode. They are difficult to process and costly. Summary of the invention

[0006] The purpose of the present invention is to overcome the defects of the prior art and propose a conical semiconductor laser based on supersymmetry and a preparation method thereof. Based on the supersymmetry theory, a supersymmetric companion loss waveguide that phase-matches the high-order mode of the conical gain waveguide is adopted to annihilate the high-order mode generated in the conical gain waveguide, thereby improving the fundamental mode light intensity, improving the beam quality of the conical device, increasing the catastrophic damage threshold of the cavity surface of the conical device, obtaining a uniform near-field light intensity distribution, and realizing a stable high-power near-diffraction-limited laser output.

[0007] To achieve the above object, the present invention adopts the following specific technical solutions:

[0008] The tapered semiconductor laser based on supersymmetry provided by the present invention comprises: a quantum epitaxial wafer substrate, a ridge waveguide, a tapered gain waveguide connected end to end with the ridge waveguide, and supersymmetric companion loss waveguides located on both sides of the tapered gain waveguide are prepared on the quantum epitaxial wafer substrate; wherein the ridge waveguide is used to generate near-diffraction-limited fundamental mode light; the tapered gain waveguide is used to amplify the fundamental mode light; the supersymmetric companion loss waveguide matches the phase mode of the tapered gain waveguide to form supersymmetric coupling, which is used to annihilate the high-order mode in the tapered gain waveguide.

[0009] Preferably, the width of the ridge waveguide is 2 μm-6 μm.

[0010] Preferably, the tapered gain waveguide has a tapered angle of 1°-6°.

[0011] Preferably, the supersymmetric partner lossy waveguide is a waveguide array.

[0012] Preferably, a high-reflection film is plated on the end face of the ridge waveguide to form a rear cavity surface for reflecting the laser reaching the rear cavity surface back to the ridge waveguide; an anti-reflection film is plated on the end face of the tapered gain waveguide to form a front cavity surface for lasing the laser amplified by the tapered gain waveguide.

[0013] The method for preparing a tapered semiconductor laser based on supersymmetry provided by the present invention comprises the following steps:

[0014] S1. Prepare quantum epitaxial wafer substrate;

[0015] S2. A ridge waveguide, a tapered gain waveguide connected end to end with the ridge waveguide, and supersymmetric companion loss waveguides located on both sides of the tapered gain waveguide are prepared on a quantum epitaxial wafer substrate; wherein the ridge waveguide is used to generate near-diffraction-limited fundamental mode light; the tapered gain waveguide is used to amplify the fundamental mode light; the supersymmetric companion loss waveguide matches the phase mode of the tapered gain waveguide to form supersymmetric coupling, which is used to annihilate high-order modes in the tapered gain waveguide.

[0016] Preferably, step S1 specifically includes the following steps:

[0017] An N-type cladding layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type cladding layer and a P-type highly doped cap layer are sequentially deposited and grown on the N-type substrate layer to form a quantum epitaxial wafer substrate.

[0018] Preferably, step S2 specifically includes the following steps:

[0019] S21, etching downward from the P-type highly doped cap layer to the P-type waveguide layer to form a ridge waveguide, and etching downward from the P-type highly doped cap layer to the interface between the P-type highly doped cap layer and the P-type cladding layer to form a tapered gain waveguide;

[0020] S22. Etching from the P-type highly doped cap layer downward to the P-type waveguide layer on both sides of the tapered gain waveguide forms a supersymmetric companion waveguide, and introducing loss into the supersymmetric companion waveguide forms a supersymmetric companion loss waveguide.

[0021] Preferably, after step S2, the method further comprises the following steps:

[0022] S3, depositing a P-side metal electrode on the top surface of the P-type highly doped cap layer, and depositing an N-side metal electrode on the bottom surface of the N-type substrate layer;

[0023] S4. A high-reflection film is plated on the end face of the ridge waveguide to form a rear cavity surface, and an anti-reflection film is plated on the end face of the tapered gain waveguide to form a front cavity surface.

[0024] Preferably, loss is introduced into the supersymmetric companion waveguide by means of electrical isolation, reverse bias or ion implantation to form a supersymmetric companion lossy waveguide.

[0025] The present invention can achieve the following technical effects:

[0026] 1. High-power near-diffraction-limited output: This invention is based on the supersymmetry principle in high-energy physics and uses the supersymmetry coupling effect to improve the deterioration of the beam quality of the conical semiconductor laser under high injection current. The supersymmetry coupling effect is used to filter out the high-order modes in the conical gain band, suppress the generation of nonlinear effects, optimize the beam quality of the conical semiconductor laser, improve the output power and power stability of the conical semiconductor laser, and achieve high-power near-diffraction-limited laser output of the conical semiconductor laser;

[0027] 2. Uniform light field distribution: The present invention effectively improves the uniformity of the near-field distribution and far-field distribution of the output light end face of the conical semiconductor laser, effectively reduces the spatial hole burning effect, and increases the optical catastrophic damage threshold of the cavity surface of the conical semiconductor laser, which is beneficial to the realization of a high-performance and high-reliability laser light source;

[0028] 3. The micron-scale structure involved in the present invention can be manufactured by etching process. Compared with nano-scale process technology and secondary epitaxial technology such as micro-nano gratings, photonic crystals, non-absorption windows, etc., it has the advantages of large process tolerance, simple process and low cost, and is suitable for large-scale commercial production;

[0029] 4. The present invention only constructs supersymmetric companion loss waveguides on both sides of the tapered gain waveguide, filters out high-order modes by light wave coupling, does not damage the active area and the tapered gain waveguide structure, has low energy loss, high device stability, and high yield, and is suitable for use in products with high quality requirements in fields such as military and industry. It can avoid high loss and low stability introduced by methods such as light leakage grooves that damage the active area near the waveguide and patterned waveguide structures, and the waveguide structure of the tapered laser has a larger design space;

[0030] 5. The present invention optimizes the optical field mode by regulating the spatial distribution of the tapered gain waveguide and the supersymmetric companion loss waveguide, and can use a monolithic electrode and a conventional cavity surface mask, thereby avoiding the technical difficulty and process cost increased by the graphic electrode structure such as the separated electrode and the high-quality cavity surface optical film;

[0031] 6. The present invention can realize high-power near-diffraction-limited semiconductor laser single tube or linear array output, and can also be used as a pump light source for other semiconductor lasers. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a schematic structural diagram of a tapered semiconductor laser based on supersymmetry provided according to an embodiment of the present invention;

[0033] Figure 2 It is a schematic flow chart of a method for preparing a tapered semiconductor laser based on supersymmetry provided in an embodiment of the present invention;

[0034] Figure 3It is a schematic diagram of the light field distribution simulation results of a tapered semiconductor laser based on supersymmetry provided according to an embodiment of the present invention.

[0035] The reference numerals therein include: quantum epitaxial wafer substrate 1, ridge waveguide 2, tapered gain waveguide 3, supersymmetric companion loss waveguide 4, rear cavity surface 5, and front cavity surface 6. DETAILED DESCRIPTION

[0036] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the following description, the same modules are represented by the same reference numerals. In the case of the same reference numerals, their names and functions are also the same. Therefore, the detailed description thereof will not be repeated.

[0037] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and do not constitute a limitation of the present invention.

[0038] Based on the existing problems of tapered semiconductor lasers and the disadvantages of existing solutions, the present invention proposes a tapered semiconductor laser based on supersymmetry and a preparation method thereof. Based on the supersymmetry principle in high-energy physics, a supersymmetric companion loss waveguide is constructed on both sides of the tapered gain waveguide to match the phase of the high-order mode in the tapered gain waveguide, and the high-order mode in the tapered gain waveguide is filtered out by using the supersymmetric coupling effect, so as to increase the fundamental mode light intensity, improve the light field mode stability and light field distribution uniformity of the tapered semiconductor laser when working at high power, inhibit the optical catastrophic damage caused thereby and the beam quality degradation caused by the complex spatial mode under high power, so that the device can achieve stable fundamental transverse mode lasing under high output power, and achieve the beneficial effect of high-power near-diffraction-limited laser output of the tapered semiconductor laser. Moreover, the tapered semiconductor laser based on the supersymmetric companion loss waveguide structure is manufactured by i-line lithography and etching, and the cost and processing difficulty are relatively low, thereby solving the problems of high loss, precise structure, complex process, high cost, and difficulty in practical application of the existing tapered semiconductor laser.

[0039] Figure 1 The structure of a tapered semiconductor laser based on supersymmetry provided according to an embodiment of the present invention is shown.

[0040] like Figure 1As shown, the tapered semiconductor laser based on supersymmetry provided by the embodiment of the present invention includes a quantum epitaxial wafer substrate 1, a ridge waveguide 2, a tapered gain waveguide 3, a supersymmetric companion loss waveguide 4, a rear cavity surface 5 and a front cavity surface 6; wherein, the ridge waveguide 2, the tapered gain waveguide 3, and the supersymmetric companion loss waveguide 4 are respectively prepared on the quantum epitaxial wafer substrate 1, the ridge waveguide 2 and the tapered gain waveguide 3 are connected end to end, and the supersymmetric companion loss waveguide 4 is located on both sides of the tapered gain waveguide 3. The ridge waveguide 2 is used to generate near-diffraction-limited fundamental mode light. The tapered gain band 3 is used to amplify the near-diffraction-limited fundamental mode light emitted by the ridge waveguide 2. The supersymmetric companion loss waveguide 4 is phase-mode matched with the tapered gain waveguide 3 to form supersymmetric coupling, which is used to annihilate the high-order modes generated in the tapered gain waveguide 3 to achieve high-power near-diffraction-limited output of the fundamental mode light.

[0041] The quantum epitaxial wafer substrate 1 includes a P-side metal electrode, a P-type highly doped cap layer, a P-type cladding layer, a P-type waveguide layer, an active layer, an N-type waveguide layer, an N-type cladding layer, an N-type substrate layer and an N-side metal electrode, which are prepared in sequence from top to bottom.

[0042] The waveguide structure of the tapered semiconductor laser based on supersymmetry is composed of a partial P-type waveguide layer, a P-type cladding layer, a P-type highly doped cap layer and a P-surface metal electrode, that is, a ridge waveguide 2, a tapered gain waveguide 3 and a supersymmetric companion loss waveguide 4 structure are monolithically integrated on the surface of a quantum epitaxial wafer substrate 1.

[0043] The rear cavity surface 5 and the front cavity surface 6 constitute a resonant cavity required for laser oscillation. The rear cavity surface 5 is located at the end face of the ridge waveguide 2 and is formed by coating a high-reflection film. The reflectivity of the laser wavelength is 95%-99.95%, and it is used to reflect the laser reaching the rear cavity surface 5 back to the ridge waveguide 2; the front cavity surface 6 is located at the end face of the tapered gain waveguide 3 and is formed by coating an anti-reflection film. The reflectivity of the laser wavelength is 0.01%-2%, and it is used to lasing the laser amplified by the tapered gain waveguide 3.

[0044] A plurality of supersymmetric partner loss waveguides 4 are arranged on both sides of the tapered gain waveguide 3. The phases of the supersymmetric partner loss waveguides 4 and the high-order modes in the tapered gain waveguide 3 are matched to form supersymmetric coupling. When the injected current increases, the photon density in the tapered gain waveguide 3 increases, and the interaction between photons and carriers generates high-order modes in the tapered gain waveguide 3. When the high-order modes generated in the tapered gain waveguide 3 perfectly match the optical phase mode of the supersymmetric partner loss waveguide 4, supersymmetric coupling will occur, thereby annihilating the high-order modes in the tapered gain waveguide 3, and only the fundamental mode light propagates and is amplified in the tapered gain waveguide 3, thereby obtaining a uniform near-field light intensity distribution, improving the optical catastrophic damage threshold of the light-exiting cavity surface, and achieving high-power near-diffraction-limited output.

[0045] In a specific example of the present invention, the width of the ridge waveguide 2 is 2μm-6μm; the cone angle of the tapered gain waveguide 3 is 1°-6°; the shape of the supersymmetric partner loss waveguide 4 is strip-shaped, and the width of the supersymmetric partner loss waveguide 4 is 2μm-6μm. The supersymmetric partner loss waveguide is a waveguide array located on both sides of the tapered gain waveguide 3, and its optical phase mode perfectly matches the high-order mode of the gain waveguide.

[0046] In the present invention, the high-order mode of the main waveguide originates from the tapered gain waveguide, and the optical mode in the tapered gain waveguide 3 gradually changes as the entrance of the tapered region connected to the ridge waveguide 2 changes to the laser exit cavity surface, so the high-order mode changes dynamically, and the supersymmetric companion loss waveguide 4 filters out the high-order mode generated by the tapered gain waveguide 3, which belongs to the dynamic filtering process. It can be seen that the supersymmetric companion loss waveguide 4 can filter out the dynamically changing high-order mode of the main waveguide, realize the suppression of dynamic multi-mode generation in the tapered gain waveguide and the homogenization of the light field, thereby improving the problem of deterioration of the beam quality of the tapered semiconductor laser when working at high power, and improving the fundamental mode output power of the tapered semiconductor laser.

[0047] The above content describes in detail the structure of the tapered semiconductor laser based on supersymmetry provided by an embodiment of the present invention. Corresponding to the tapered semiconductor laser based on supersymmetry, an embodiment of the present invention also provides a method for preparing the tapered semiconductor laser based on supersymmetry.

[0048] Figure 2 The flowchart of the method for preparing a tapered semiconductor laser based on supersymmetry provided in accordance with an embodiment of the present invention is shown.

[0049] like Figure 2 As shown, the method for preparing a tapered semiconductor laser based on supersymmetry provided by an embodiment of the present invention comprises the following steps:

[0050] S1. Prepare quantum epitaxial wafer substrate.

[0051] The material system of the quantum epitaxial wafer substrate is AlGaAs / InGaAs / GaAs, and the lasing light wavelength is 980nm, but is not limited to the above materials and lasing light wavelength.

[0052] The quantum epitaxial wafer substrate is grown on an N-type doped substrate by metal organic compound vapor deposition (MOCVD) technology. From top to bottom, along the direction perpendicular to the waveguide, the quantum epitaxial wafer substrate is composed of a P-side metal electrode, a P-type highly doped cap layer, a P-type cladding layer, a P-type waveguide layer, an active layer, an N-type waveguide layer, an N-type cladding layer, an N-type substrate layer and an N-side metal electrode.

[0053] S2. A ridge waveguide, a tapered gain waveguide connected end to end with the ridge waveguide, and supersymmetric companion loss waveguides located on both sides of the tapered gain waveguide are prepared on a quantum epitaxial wafer substrate; wherein the ridge waveguide is used to generate near-diffraction-limited fundamental mode light; the tapered gain waveguide is used to amplify the fundamental mode light; the supersymmetric companion loss waveguide matches the phase mode of the tapered gain waveguide to form supersymmetric coupling, which is used to annihilate high-order modes in the tapered gain waveguide.

[0054] Step S2 specifically includes the following steps:

[0055] S21. Etching from the P-type highly doped cap layer downwards to the P-type waveguide layer along the growth direction of the quantum epitaxial wafer substrate to form a ridge waveguide, and etching from the P-type highly doped cap layer downwards to the interface between the P-type highly doped cap layer and the P-type cladding layer along the growth direction of the quantum epitaxial wafer substrate to form a tapered gain waveguide.

[0056] S22. Etching from the P-type highly doped cap layer downward to the P-type waveguide layer on both sides of the tapered gain waveguide forms a supersymmetric companion waveguide, and introducing loss into the supersymmetric companion waveguide forms a supersymmetric companion loss waveguide.

[0057] The above etching method adopts i-line photolithography or plasma etching and other technologies.

[0058] Ways to introduce loss into the supersymmetric companion waveguide include but are not limited to electrical isolation, reverse bias, ion implantation, and the like.

[0059] After step S2, the method further includes the following steps:

[0060] S3, depositing a P-side metal electrode on the top surface of the P-type highly doped cap layer, and depositing an N-side metal electrode on the bottom surface of the N-type substrate layer.

[0061] A P-side metal electrode is fabricated on the top surface of the P-type highly doped cap layer by using a metal deposition process, and an N-side metal electrode is fabricated on the bottom surface of the N-type substrate layer by using a metal deposition process after thinning and polishing the N-type substrate layer.

[0062] Before manufacturing the P-side metal electrode and the N-side metal electrode, an electrode window is manufactured by using i-line photolithography or plasma etching technology.

[0063] S4. A high-reflection film is plated on the end face of the ridge waveguide to form a rear cavity surface, and an anti-reflection film is plated on the end face of the tapered gain waveguide to form a front cavity surface.

[0064] After the unit chip is dissociated, the fabrication of the tapered semiconductor laser based on supersymmetry is completed.

[0065] Figure 3 The light field distribution simulation result of the tapered semiconductor laser based on supersymmetry provided according to an embodiment of the present invention is shown.

[0066] like Figure 3 As shown, (a) is the light field distribution of the conical semiconductor laser, (b) is the light field distribution of the conical semiconductor laser introducing a supersymmetric partner loss waveguide, (c) is the light field distribution of the conical semiconductor laser along the xz plane, (d) is the light field distribution of the conical semiconductor laser introducing a supersymmetric partner loss waveguide along the xz plane, (e) is the light field distribution of the conical semiconductor laser along the xy plane, and (f) is the light field distribution of the conical semiconductor laser introducing a supersymmetric partner loss waveguide along the xy plane.

[0067] Before the introduction of the supersymmetric companion loss waveguide, the light field on the light-exiting cavity surface is uneven and fluctuates. When the injected current increases, higher-order modes will appear. After the supersymmetric companion loss waveguide is introduced on both sides of the tapered gain waveguide, the uniformity of the cavity surface light field distribution is improved, the energy is smoother and more concentrated, and when the current increases, the beam quality does not deteriorate significantly. It can be seen that the introduction of the supersymmetric companion loss waveguide can filter out high-order modes and improve the uniformity of the light field distribution. The above simulations prove that the present invention is feasible and effective.

[0068] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0069] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

[0070] The above specific implementations of the present invention do not constitute a limitation on the protection scope of the present invention. Any other corresponding changes and modifications made based on the technical concept of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A tapered semiconductor laser based on supersymmetry, characterized in that: include: A quantum epitaxial wafer substrate, on which a ridge waveguide, a tapered gain waveguide connected end to end with the ridge waveguide, and supersymmetric companion loss waveguides located on both sides of the tapered gain waveguide are prepared; wherein, The ridge waveguide is used to generate near-diffraction-limited fundamental mode light; The tapered gain waveguide is used to amplify the fundamental mode light; The phase mode of the supersymmetric companion loss waveguide matches the phase mode of the tapered gain waveguide to form a supersymmetric coupling for annihilating the high-order mode in the tapered gain waveguide; The method for preparing a tapered semiconductor laser based on supersymmetry comprises the following steps: S1. Prepare quantum epitaxial wafer substrate; S2, preparing a ridge waveguide, a tapered gain waveguide connected end to end with the ridge waveguide, and a supersymmetric companion loss waveguide located on both sides of the tapered gain waveguide on the quantum epitaxial wafer substrate; wherein the ridge waveguide is used to generate near-diffraction-limited fundamental mode light; the tapered gain waveguide is used to amplify the fundamental mode light; the supersymmetric companion loss waveguide matches the phase mode of the tapered gain waveguide to form a supersymmetric coupling for annihilating the high-order mode in the tapered gain waveguide; Step S1 specifically includes the following steps: Sequentially depositing and growing an N-type cladding layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type cladding layer and a P-type highly doped cap layer on the N-type substrate layer to form the quantum epitaxial wafer substrate; Step S2 specifically includes the following steps: S21, etching downward from the P-type highly doped cap layer to the P-type waveguide layer to form the ridge waveguide, and etching downward from the P-type highly doped cap layer to the interface between the P-type highly doped cap layer and the P-type cladding layer to form the tapered gain waveguide; S22, etching downward from the P-type highly doped cap layer to the P-type waveguide layer on both sides of the tapered gain waveguide to form a supersymmetric companion waveguide, and introducing loss into the supersymmetric companion waveguide to form the supersymmetric companion loss waveguide.

2. The tapered semiconductor laser based on supersymmetry according to claim 1, characterized in that: The width of the ridge waveguide is 2 μm-6 μm.

3. The tapered semiconductor laser based on supersymmetry according to claim 1, characterized in that: The tapered gain waveguide has a tapered angle of 1°-6°.

4. The tapered semiconductor laser based on supersymmetry according to claim 1, characterized in that: The supersymmetric partner lossy waveguide is a waveguide array.

5. The tapered semiconductor laser based on supersymmetry according to claim 1, characterized in that: A high-reflection film is plated on the end face of the ridge waveguide to form a rear cavity surface, which is used to reflect the laser reaching the rear cavity surface back to the ridge waveguide; an anti-reflection film is plated on the end face of the tapered gain waveguide to form a front cavity surface, which is used to lasing the laser amplified by the tapered gain waveguide.

6. The tapered semiconductor laser based on supersymmetry according to claim 1, characterized in that: After step S2, the method further includes the following steps: S3, depositing a P-side metal electrode on the top surface of the P-type highly doped cap layer, and depositing an N-side metal electrode on the bottom surface of the N-type substrate layer; S4, coating the end face of the ridge waveguide with a high-reflection film to form a rear cavity face, and coating the end face of the tapered gain waveguide with an anti-reflection film to form a front cavity face.

7. The tapered semiconductor laser based on supersymmetry according to claim 1, characterized in that: The supersymmetric companion lossy waveguide is formed by introducing loss into the supersymmetric companion waveguide by means of electrical isolation, reverse bias or ion implantation.

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