Method for detecting impurities in metal layer of resistor element

Abstract

The present invention provides a method for detecting impurities in a metal layer of a resistor element. A pulse voltage is applied to the metal layer of the resistor element to generate a test resonance wave. The test resonance wave is compared with a standard resonance wave to determine whether the metal layer contains impurities.

Description

Technical Field

[0001] The present invention relates to a method for detecting impurities in a metal layer of a resistor element, and in particular to a method for detecting impurities in a metal layer using a pulse voltage waveform. Background Art

[0002] Common passive components such as chip resistors and columnar resistors all use metal film as the resistor body. If impurities such as organic or inorganic substances adhere to the metal film during the manufacturing process, the resistance value will change when power is applied, and the life of the resistor element will also be affected.

[0003] Generally, resistance elements are mainly tested for resistance value, but it is impossible to know whether there are impurities in the metal layer of the resistance element. Therefore, there may be a situation where the resistance value meets the standard but impurities exist in the metal layer. Summary of the invention

[0004] The present invention applies non-destructive high-speed and low-energy pulse voltage to the metal layer of the resistor element to generate a resonant wave in the metal layer. When the resonant waveform generated by the metal layer decays abnormally or fluctuates abnormally, it is determined that the metal layer contains impurities.

[0005] The present invention provides a method for detecting impurities in a metal layer of a resistor element, comprising:

[0006] Applying a pulse voltage to a metal layer of a pure resistor element to establish a standard resonant wave;

[0007] Applying the pulse voltage to a metal layer of a test resistor element to obtain a test resonance wave; and

[0008] Compare the standard resonant wave with the test resonant wave:

[0009] If the ratio exceeds a set value, it is determined that the impurity content of the metal layer of the test resistor element is too high; or

[0010] If the ratio does not exceed the set value, it is determined that the impurity composition of the metal layer of the test resistor element meets the standard.

[0011] A method for detecting impurities in a metal layer of a resistor element, comprising:

[0012] Applying a pulse voltage to a metal layer of a resistor element to obtain a resonant wave; and

[0013] Compare the waveforms of the resonant wave in different periods:

[0014] If the ratio exceeds a set value, it is determined that the impurity content of the metal layer of the resistor element is too high; or

[0015] If the ratio does not exceed the set value, it is determined that the impurity composition of the metal layer of the test resistor element meets the standard.

[0016] A method for detecting impurities in a metal layer of a resistor element, comprising:

[0017] Measuring a first resistance value of a metal layer of a resistor element;

[0018] Applying a pulse voltage to the metal layer of the resistor element;

[0019] measuring a second resistance value of the metal layer of the resistor element; and

[0020] Compare a change in the first resistance value and the second resistance value:

[0021] If the change exceeds a set value, it is determined that the impurity content of the metal layer of the resistor element is too high; or

[0022] If the change does not exceed the set value, it is determined that the impurity composition of the metal layer of the test resistor element meets the standard. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a comparison chart of the metal layer resonance waveforms of standard products and defective products.

[0024] Figure 2 This is the metal layer resonance waveform of a defective product.

[0025] Reference numerals:

[0026] C1 First cycle

[0027] C2 Second cycle DETAILED DESCRIPTION

[0028] The following will describe in detail various embodiments of the present invention, and with the help of drawings as examples, so that readers can have a better understanding. In addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments. Any easy replacement, modification, and equivalent changes of the embodiments should be understood to be included in the scope of the present invention. The definition of the scope of the patent should be based on the claims. It is particularly noted that the drawings are for illustration only and do not represent the actual size or number of components. Some details may not be fully drawn to simplify the drawings.

[0029] The detection method of the present invention is to apply a 3KV to 6KV pulse voltage to the metal layer of the resistor element and measure the resonance wave generated by the metal layer. When the resonance waveform generated by the metal layer decays abnormally or fluctuates abnormally, it is determined that the metal layer contains impurities.

[0030] Alternatively, the resonant waveform of the standard product is set in advance, and during the mass production stage, a pulse voltage is applied to each resistor element to be tested. If the metal layer of the resistor element contains impurities, the resonant amplitude will decay rapidly and the resonant wave area will become relatively smaller. If the ratio of the resonant wave area of ​​the standard product and the object to be tested exceeds the set value, it is determined that the metal layer contains impurities.

[0031] In one embodiment, a 4.5KV pulse voltage is first applied to the metal layer of the impurity-free resistor element to establish a standard resonance wave, and then a 4.5KV pulse voltage is applied to the metal layer of the test resistor element to obtain a test resonance wave. Finally, the standard resonance wave and the test resonance wave are compared. Figure 1 As shown, if the ratio exceeds a set value, it is judged that the impurity content of the metal layer of the test resistor element is too high, otherwise it meets the standard. The set value is that the amplitude of the test resonance wave of the first period C1 is less than the amplitude of the standard resonance wave of the first period C1 by more than 10%, or the waveform area of ​​the test resonance wave of the first period C1 is less than the waveform area of ​​the standard resonance wave of the first period C1 by more than 1%.

[0032] In another embodiment, a 4.5KV pulse voltage is applied to the metal layer of the resistor element to obtain a resonant wave, and the waveforms of the resonant wave at different periods are compared, such as Figure 2 As shown, if the ratio exceeds a set value, it is judged that the impurity content of the metal layer of the resistor element is too high, otherwise it meets the standard. The set value is that the amplitude of the resonant wave in the second cycle is less than the amplitude of the first cycle by more than 30%.

[0033] In other embodiments, the first resistance of the metal layer of the resistor element is measured first, a 4.5KV pulse voltage is applied to the metal layer of the resistor element, and then the second resistance of the metal layer of the resistor element is measured. Finally, the change of the first resistance and the second resistance before and after the pulse voltage is applied is compared. If the change exceeds a set value, it is judged that the impurity content of the metal layer of the resistor element is too high, otherwise it meets the standard. The set value is 0.1%.

[0034] In other embodiments, the metal layer of the resistor element is a multi-layer structure and can be different metal layers. In operation, multiple pulse voltages can be applied, and the second or third pulse voltage is selected for measurement to obtain a more stable resonant wave and increase the accuracy of the judgment.

Claims

1. A method for detecting impurities in a metal layer of a resistor element, characterized in that: Include: Applying a pulse voltage of 3KV to 6KV to a metal layer of a non-impurity resistor element to establish a standard resonant wave; Applying the pulse voltage to a metal layer of a test resistor element to obtain a test resonance wave; and Compare the standard resonant wave with the test resonant wave: If the ratio exceeds a set value, it is determined that the impurity content of the metal layer of the test resistor element is too high; or If the ratio does not exceed the set value, it is determined that the impurity composition of the metal layer of the test resistor element meets the standard; The setting value is that the amplitude of the test resonant wave in the first period is smaller than the amplitude of the standard resonant wave in the first period by more than 10%, or the waveform area of ​​the test resonant wave in the first period is smaller than the waveform area of ​​the standard resonant wave in the first period by more than 1%.

2. The method for detecting impurities in a metal layer of a resistor element according to claim 1, wherein: The impurity-free resistor element metal layer and the test resistor element metal layer are multi-layer structures.

3. A method for detecting impurities in a metal layer of a resistor element, characterized in that: Include: Applying a pulse voltage of 3KV to 6KV to a metal layer of a resistor element to obtain a resonant wave; and Compare the waveforms of the resonant wave in different periods: If the ratio exceeds a set value, it is determined that the impurity content of the metal layer of the resistor element is too high; or If the ratio does not exceed the set value, it is determined that the impurity composition of the metal layer of the resistor element meets the standard; The setting value is that the amplitude of the resonant wave in the second cycle is smaller than the amplitude of the first cycle by more than 30%.

4. The method for detecting impurities in a metal layer of a resistor element according to claim 3, wherein: The metal layer of the resistor element is a multi-layer structure.

5. A method for detecting impurities in a metal layer of a resistor element, characterized in that: Include: Measuring a first resistance value of a metal layer of a resistor element; Applying a pulse voltage of 3KV to 6KV to the metal layer of the resistor element; measuring a second resistance value of the metal layer of the resistor element; and Compare a change in the first resistance value and the second resistance value: If the change exceeds a set value, it is determined that the impurity content of the metal layer of the resistor element is too high; or If the change does not exceed the set value, it is determined that the impurity composition of the metal layer of the resistor element meets the standard; The set value is 0.1%.

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