Flexible memory and computing integrated memristor and preparation method thereof

Abstract

The application discloses a flexible memory and computing integrated memristor and a preparation method thereof. The flexible memory and computing integrated memristor comprises a bottom electrode which is a first metal fabric, a ferroelectric functional film stack which comprises three or more layers of hafnium-doped high-k dielectric films and is coated on the bottom electrode, and a top electrode which is a second metal fabric and is formed on the bottom electrode in a crossing manner with the bottom electrode. By applying a voltage sequence pulse to the two top electrodes, the dual functions of storing data and logical calculation are realized.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a flexible memory and computing integrated memristor and a preparation method thereof. BACKGROUND

[0002] The memory and the computing unit in the traditional Von Neumann computing architecture are in a physically separated state, and data needs to be frequently transmitted between the two, which limits the information processing speed and brings additional power consumption. In order to break through this limitation, it is urgent to develop memory devices with IMP, NAND and other logic gate computing functions.

[0003] Flexible electronics have excellent bending characteristics, portability, low cost and other characteristics, and have great application prospects in wearable devices, implantable electronics, soft robots, artificial skin and other fields. In recent years, fabric electronics, as an important branch of flexible electronics, have rapidly developed in the wearable field due to their natural advantages in wearable smart clothing. However, due to the linear structure of fabric electronics, a stable and reliable material system is still a resistance to the development of flexible fabric electronics.

[0004] High-k oxides such as HfO2, ZrO2, Al2O3 and TiO2 based on atomic layer deposition technology have high density, uniformity and stability, and are very suitable for growing on the surface of fabric and used as functional layers of fabric electronics. In particular, HfZrOx, HfAlOx and HfLaOx doped with hafnium-based high-k materials after annealing treatment will have ferroelectric properties and can be used to prepare ferroelectric memristor devices based on polarization reversal. Further, using the current response of the ferroelectric memristor device to realize logic computing function will greatly promote the development of fabric-type ferroelectric memory and computing integrated technology.

[0005] However, single-layer hafnium-based ferroelectric films usually face problems such as small remanent polarization strength and difficult to improve coercive field, which limits the improvement of their storage performance. Through optimization of the film growth process, the ferroelectric properties of the film can only be improved to a limited extent, which is not the most effective modification method. By designing a reasonable stack structure, the ferroelectric properties of the functional layer can be optimized and improved, which is the development direction of the next generation of high-performance ferroelectric memory and computing integrated devices. SUMMARY

[0006] The present application discloses a flexible memory and computing integrated memristor, comprising: a bottom electrode which is a first metal fabric; a ferroelectric functional film stack which comprises three or more layers of doped hafnium-based high-k dielectric films and is coated on the bottom electrode; and a top electrode which is a second metal fabric and is formed on the bottom electrode coated with the ferroelectric functional film stack in a cross structure, and by applying a voltage sequence pulse to the two top electrodes, the storage data and logic computing dual functions are realized.

[0007] In the flexible memory and computing integrated memristor, preferably, the hafnium-based high-k dielectric film is HfZrOx, HfAlOx, HfLaOx or HfTiOx.

[0008] In the flexible memory and computing integrated memristor, preferably, the first metal fabric and the second metal fabric are Pt, Au, Al or Pd.

[0009] In the flexible memory and computing integrated memristor, preferably, the diameter of the first metal fabric is 50-200 mu m, and the diameter of the second metal fabric is 20-100 mu m.

[0010] In the flexible memory and computing integrated memristor, preferably, the thickness of each layer of hafnium-based high-k dielectric film is 5-15 nm.

[0011] The application further discloses a preparation method of the flexible memory and computing integrated memristor, which comprises the following steps: preparing a first metal fabric as a bottom electrode; forming a ferroelectric functional film stack on the bottom electrode, so that the bottom electrode is covered by the ferroelectric functional film stack, the ferroelectric functional film stack comprises three or more layers of hafnium-based high-k dielectric film; forming a second metal fabric as a top electrode on the bottom electrode covered by the ferroelectric functional film stack, so that the top electrode and the bottom electrode are in a cross shape; and realizing the dual functions of storing data and logical calculation by applying a voltage sequence pulse to the two top electrodes.

[0012] In the preparation method of the flexible memory and computing integrated memristor, preferably, the hafnium-based high-k dielectric film is HfZrOx, HfAlOx, HfLaOx or HfTiOx.

[0013] In the preparation method of the flexible memory and computing integrated memristor, preferably, the first metal fabric and the second metal fabric are Pt, Au, Al or Pd.

[0014] In the preparation method of the flexible memory and computing integrated memristor, preferably, the diameter of the first metal fabric is 50-200 mu m, and the diameter of the second metal fabric is 20-100 mu m.

[0015] In the preparation method of the flexible memory and computing integrated memristor, preferably, the thickness of each layer of hafnium-based high-k dielectric film is 5-15 nm.

[0016] Beneficial effects:

[0017] (1) Breaking the traditional computing architecture, introducing a memristor device with logical computing function, so that storage and calculation can be realized in the same unit, improving the flexibility and functionality of the device, and being more advantageous in in-situ information processing.

[0018] (2) Using atomic deposition technology to grow doped hafnium-based high-k oxide films on the surface of non-planar fabric, using its atomic-level controllable growth rate and excellent step coverage to obtain high-quality films. After annealing, the doped hafnium-based high-k oxide film exhibits ferroelectricity, making the device have storage performance, suitable for building flexible ferroelectric memristor devices such as fabric.

[0019] (3) Use doped hafnium-based films of different materials to form a ferroelectric stack to improve the ferroelectric properties of the device such as remanent polarization, breaking the performance limit of optimizing only a single ferroelectric layer, and laying the foundation for the development of high-performance memory and computing integrated memristors. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figure 1 is a flowchart of a flexible memory and computing integrated memristor preparation method.

[0021] Figure 2 is a structural schematic diagram of a first metal fabric.

[0022] Figures 3-5 is a structural schematic diagram after forming each layer of the ferroelectric functional film stack.

[0023] Figure 6 is a cross-sectional view after forming the ferroelectric functional film stack.

[0024] Figure 7 is a structural schematic diagram of a flexible memory and computing integrated memristor.

[0025] Figure 8 is a circuit schematic diagram of a flexible memory and computing integrated memristor implementing a universal logic IMP gate operation. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solutions and advantages of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. It should be understood that the specific embodiments described herein are only used to explain the present application and not to limit the present application. The described embodiments are only some of the embodiments of the present application, not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of the present application.

[0027] In the description of the present application, it should be noted that the terms "upper", "lower", "vertical", "horizontal" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance.

[0028] In addition, many specific details of the present application are described below, such as the structure, materials, dimensions, processing and techniques of the device, in order to more clearly understand the present application. But as those skilled in the art can understand, the present application can be implemented without these specific details. Unless specifically indicated below, each part in the device can be composed of materials known to those skilled in the art, or materials with similar functions developed in the future can be used.

[0029] Figure 1 is a flow chart of a flexible memory and computing integrated memristor preparation method. As shown in Figure 1 , the flexible memory and computing integrated memristor preparation method comprises the following steps:

[0030] Step S1, a first metal fabric Pt with a diameter of 50-200 μm is prepared as a bottom electrode 100 for preparing a flexible memory and computing integrated memristor, as shown in Figure 2 The metal fabric can also be Au, Al, Pd, etc.

[0031] Step S2, an HfZrOx\HfAlOx\HfZrOx ferroelectric functional film stack is prepared on the first metal fabric Pt 100. Specifically, an HfZrOx film 101 with a thickness of 10 nm is prepared on the first metal fabric Pt 100 at a temperature of 300°C using atomic layer deposition technology, so as to coat the first metal fabric Pt 100, as shown in Figure 3 Then, an HfAlOx film 102 with a thickness of 10 nm is continuously prepared at a temperature of 300°C using atomic layer deposition technology, so as to coat the HfZrOx film 101, as shown in Figure 4 Next, an HfZrOx film 103 with a thickness of 10 nm is continuously prepared at a temperature of 300°C using atomic layer deposition technology, so as to coat the HfAlOx film 102, as shown in Figure 5 Subsequently, a rapid thermal annealing process is adopted to anneal at 350-550°C in N2 atmosphere for 20-120s, to obtain a functional film stack with ferroelectricity. Figure 6 A cross-sectional view after forming the ferroelectric functional film stack is shown in

[0032] But the present application is not limited to this, the ferroelectric function film stack is not limited to three layers, and each layer material can be HfZrOx, HfAlOx, HfLaOx, HfTiOx and other doped hafnium-based high-k dielectric thin film, adjacent layers use different hafnium-based high-k dielectric thin film. The thickness of each layer is preferably 5nm-15nm; the growth temperature is preferably 250-350℃.

[0033] Step S3, a second metal fabric Pt with a diameter of 20-100μm is used as the top electrode 104, encapsulated on the first metal fabric, i.e. the bottom electrode 100, coated with the ferroelectric function film stack, the top electrode 104 and the bottom electrode 100 with the ferroelectric function film stack form a cross structure, completing the preparation of the device, as shown in Figure 7 The second metal fabric can also be Au, Al, Pd, etc.

[0034] As shown in Figure 8 By applying voltage sequence pulses to the two top electrodes, the universal logic IMP gate operation is realized. At the same time, the device has storage performance, and the logic state can be maintained for a long time, and the dual functions of storage data and logic calculation can be realized.

[0035] The above is only a specific embodiment of the present application, but the protection scope of the present application is not limited to this, any person skilled in the art can easily think of changes or replacements within the technical range disclosed by the present application, which should be covered within the protection scope of the present application.

Claims

1. A flexible memory and computing integrated memristor, characterized in that, comprising: a bottom electrode, which is a first metal fabric; a ferroelectric functional film stack, which comprises three or more layers of doped hafnium-based high-k dielectric films, and is coated on the bottom electrode, with different doped hafnium-based high-k dielectric films used in adjacent layers; a top electrode, which is a second metal fabric, and is formed on the bottom electrode coated with the ferroelectric functional film stack in a cross structure, and by applying a voltage sequence pulse to the two top electrodes, the dual functions of storing data and logical computing are realized.

2. The flexible memory and computing integrated memristor according to claim 1, characterized in that, The doped hafnium-based high-k dielectric thin film is HfZrO x , HfAlOx, HfLaOx, or HfTiOx.

3. The flexible memory and computing integrated memristor according to claim 1, characterized in that, the first metal fabric and the second metal fabric are Pt, Au, Al or Pd.

4. The flexible memory and computing integrated memristor according to claim 1, characterized in that, the diameter of the first metal fabric is 50 μm to 200 μm; and the diameter of the second metal fabric is 20 μm to 100 μm.

5. The flexible memory and computing integrated memristor according to claim 1, characterized in that, the thickness of each layer of doped hafnium-based high-k dielectric film is 5 nm to 15 nm.

6. A method for preparing a flexible memory and computing integrated memristor, characterized in that, comprising the following steps: preparing a first metal fabric as a bottom electrode; forming a ferroelectric functional film stack on the bottom electrode, so that it coats the bottom electrode, and the ferroelectric functional film stack comprises three or more layers of doped hafnium-based high-k dielectric films, with different doped hafnium-based high-k dielectric films used in adjacent layers; forming a second metal fabric as a top electrode on the bottom electrode coated with the ferroelectric functional film stack, so that it is in a cross structure with the bottom electrode, and by applying a voltage sequence pulse to the two top electrodes, the dual functions of storing data and logical computing are realized.

7. The method for preparing a flexible memory and computing integrated memristor according to claim 6, characterized in that, the doped hafnium-based high-k dielectric film is HfZrOx, HfAlOx, HfLaOx or HfTiOx.

8. The method for preparing a flexible memory and computing integrated memristor according to claim 6, characterized in that, the first metal fabric and the second metal fabric are Pt, Au, Al or Pd.

9. The method for preparing a flexible memory and computing integrated memristor according to claim 6, characterized in that, the diameter of the first metal fabric is 50 μm to 200 μm; and the diameter of the second metal fabric is 20 μm to 100 μm.

10. The method for preparing a flexible memory and computing integrated memristor according to claim 6, characterized in that, the thickness of each layer of doped hafnium-based high-k dielectric film is 5 nm to 15 nm.

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