Magnetization rotation element, magnetoresistance effect element, magnetic recording array, high frequency device, and method for manufacturing magnetization rotation element

Abstract

The magnetization rotation element of the present embodiment includes a spin-orbit torque wiring (20), a first ferromagnetic layer (1) laminated to the spin-orbit torque wiring, and a low-resistance layer (30) laminated to a region not overlapping with the first ferromagnetic layer as viewed from a lamination direction of the spin-orbit torque wiring. The spin-orbit torque wiring has a first region (21), a second region (22), and a third region (23). The first region overlaps with the first ferromagnetic layer as viewed from the lamination direction. The second region does not overlap with the first ferromagnetic layer and the low-resistance layer as viewed from the lamination direction, and is located between the first region and the third region. The third region overlaps with the low-resistance layer as viewed from the lamination direction. The low-resistance layer has a lower resistivity than the spin-orbit torque wiring. The low-resistance layer has a smaller thickness than the spin-orbit torque wiring.

Description

TECHNICAL FIELD

[0001] The present application relates to a magnetization rotation element, a magnetoresistance effect element, a magnetic recording array, a high-frequency device, and a manufacturing method of a magnetization rotation element. BACKGROUND

[0002] As the magnetoresistance effect element, there are known a giant magnetoresistance (GMR) element configured of a multilayer film of a ferromagnetic layer and a nonmagnetic layer, and a tunnel magnetoresistance (TMR) element using an insulating layer (tunnel barrier layer, barrier layer) on the nonmagnetic layer. The magnetoresistance effect element can be applied to a magnetic sensor, a high-frequency component, a magnetic head, and a nonvolatile random access memory (MRAM).

[0003] The MRAM is a storage element integrated with the magnetoresistance effect element. In the MRAM, data is read and written by utilizing a characteristic that if a mutual magnetization direction of two ferromagnetic layers sandwiching a nonmagnetic layer in the magnetoresistance effect element changes, a resistance of the magnetoresistance effect element changes. The magnetization direction of the ferromagnetic layer is controlled by, for example, a magnetic field generated by a current. Also, for example, the magnetization direction of the ferromagnetic layer is controlled by a spin transfer torque (STT) generated by a current flowing in a stacking direction of the magnetoresistance effect element.

[0004] In a case where the magnetization direction of the ferromagnetic layer is rewritten by the STT, a write current flows in the stacking direction of the magnetoresistance effect element. The write current becomes a cause of deterioration of a characteristic of the magnetoresistance effect element.

[0005] In recent years, a method in which a current does not flow in the stacking direction of the magnetoresistance effect element at the time of writing has attracted attention. One of the methods is a writing method using a spin-orbit torque (SOT) (for example, Patent Literature 1). The SOT is induced by a spin current generated by a spin-orbit interaction or a Rashba effect on an interface of a hetero material. A current for inducing the SOT in the magnetoresistance effect element flows in a direction intersecting the stacking direction of the magnetoresistance effect element. That is, the current does not need to flow in the stacking direction of the magnetoresistance effect element, and a long life of the magnetoresistance effect element is expected.

[0006] PRIOR ART DOCUMENTS

[0007] PATENT LITERATURE

[0008] Patent Literature 1: International Publication No. 2017 / 090739 SUMMARY

[0009] PROBLEMS TO BE SOLVED BY THE INVENTION

[0010] In order to obtain a large SOT, a material that exhibits a large spin-orbit interaction needs to be used in the wiring. For example, heavy metals such as Ta or W are known as materials that exhibit a large spin Hall angle and a large spin-orbit interaction. However, these heavy metals have a large resistance, and become a heat source. Heat generated in the wiring has an effect of assisting the magnetization rotation at the time of writing data, but on the other hand, deteriorates the wiring, and in some cases, the wiring is cut off depending on the situation.

[0011] For example, in the element described in Patent Document 1, the spin-orbit torque wiring has a low-resistance portion. However, in the element described in Patent Document 1, a large part of the length direction of the spin-orbit torque wiring is composed only of the low-resistance portion, and heat generated moves in the length direction of the wiring. If the heat generated in the spin current generating portion of the spin-orbit torque wiring is released in the length direction of the wiring via the low-resistance portion, the effect of assisting the magnetization rotation at the time of writing data cannot be obtained, and in addition, the wiring is sometimes deteriorated due to heat accumulated in the fine wiring.

[0012] The present application was made in view of the above circumstances, and aims to provide a magnetization rotation element, a magnetoresistance effect element, a magnetic recording array, and a high-frequency device, which can suppress heat generation in the wiring while making it easy to write data. In addition, it also aims to provide a manufacturing method thereof.

[0013] Means for solving the technical problem

[0014] In order to solve the above technical problem, the present application provides the following means.

[0015] (1) The magnetization rotation element of the first aspect includes: a spin-orbit torque wiring; a first ferromagnetic layer laminated to the spin-orbit torque wiring; and a low-resistance layer laminated to a region that does not overlap the first ferromagnetic layer as viewed from a lamination direction of the spin-orbit torque wiring, the spin-orbit torque wiring having a first region overlapping the first ferromagnetic layer as viewed from the lamination direction, a second region not overlapping the first ferromagnetic layer and the low-resistance layer as viewed from the lamination direction, and located between the first region and a third region, and the third region overlapping the low-resistance layer as viewed from the lamination direction, the low-resistance layer having a lower resistivity than the spin-orbit torque wiring, and the low-resistance layer being thinner than the spin-orbit torque wiring.

[0016] (2) In the magnetization rotation element of the above aspect, a first end of the low-resistance layer on the first ferromagnetic layer side can be thinner than a second end of the low-resistance layer located away from the first ferromagnetic layer.

[0017] (3) The magnetization rotation element according to the above aspect can further include an oxide layer that is in contact with a side surface of the first ferromagnetic layer and the second region of the spin-orbit torque wiring.

[0018] (4) In the magnetization rotation element according to the above aspect, the oxide layer can be an oxide of a material that constitutes the low-resistance layer.

[0019] (5) In the magnetization rotation element according to the above aspect, the low-resistance layer can contain, as a main component, any one of Be, Na, Mg, Al, Ca, Co, Cu, Zn, Mo, Rh, Ag, Ir, and Au.

[0020] (6) In the magnetization rotation element according to the above aspect, the low-resistance layer can further contain, as a subcomponent, an element having an atomic number greater than yttrium.

[0021] (7) In the magnetization rotation element according to the above aspect, the low-resistance layer can be discontinuous in a cross section of the spin-orbit torque wiring along a length direction and the stacking direction.

[0022] (8) The magnetization rotation element according to the above aspect can further include a protrusion that is electrically conductive and protrudes from the low-resistance layer at a position away from a boundary between the second region and the third region as viewed in the stacking direction.

[0023] (9) In the magnetization rotation element according to the above aspect, an apex of the protrusion can be located at a position lower than a surface of the first ferromagnetic layer opposite to a surface in contact with the spin-orbit torque wiring.

[0024] (10) In the magnetization rotation element according to the above aspect, a total area of the protrusion and the low-resistance layer can be greater than an area of the spin-orbit torque wiring in a cross section of the magnetization rotation element orthogonal to a length direction of the spin-orbit torque wiring.

[0025] (11) In the magnetization rotation element according to the above aspect, the spin-orbit torque wiring can contain an element that constitutes the low-resistance layer.

[0026] (12) In the magnetization rotation element according to the above aspect, a concentration of the element that constitutes the low-resistance layer in the spin-orbit torque wiring can decrease in the order of the third region, the second region, and the first region.

[0027] (13) The magnetization rotation element according to the above aspect can include a second oxide layer that covers the low-resistance layer.

[0028] (14) The magnetoresistive effect element of the second method further comprises: a magnetized rotating element of the above method; a non-magnetic layer and a second ferromagnetic layer on the side opposite to the spin-track torque wiring of the first ferromagnetic layer in sequence.

[0029] (15) The third-party magnetic recording array has multiple magnetoresistive elements in the manner described above.

[0030] (16) The high-frequency device of the fourth type has a magnetoresistive effect element of the above type.

[0031] (17) The manufacturing method of the magnetized rotating element of the fifth type includes: a step of sequentially stacking a wiring layer and a magnetic layer; a step of processing the magnetic layer into a desired shape and forming a first ferromagnetic layer; a step of stacking a conductive layer with a resistance lower than that of the wiring layer on the wiring layer; a step of stacking an interlayer insulating layer covering the wiring layer, the first ferromagnetic layer, and the conductive layer; and a step of processing the wiring layer and the conductive layer into a desired shape via the interlayer insulating layer and forming a spin-orbit torque wiring and a low-resistance layer.

[0032] (18) The manufacturing method of the magnetized rotating element described above may further include a step of etching the conductive material attached to the sidewall of the first ferromagnetic layer after the conductive layer is stacked.

[0033] (19) The manufacturing method of the magnetized rotating element described above may further include a step of oxidizing the conductive material attached to the sidewall of the first ferromagnetic layer after the conductive layer is stacked.

[0034] Invention Effects

[0035] The magnetized rotating element, magnetoresistive effect element, magnetic recording array, and high-frequency device of this embodiment can suppress heat generation in the wiring while making data writing easy. Attached Figure Description

[0036] Figure 1 This is a schematic diagram of the magnetic recording array according to the first embodiment.

[0037] Figure 2 This is a cross-sectional view of the feature portion of the magnetic recording array according to the first embodiment.

[0038] Figure 3 This is a cross-sectional view of the magnetoresistive effect element in the first embodiment.

[0039] Figure 4 This is a top view of the magnetoresistive effect element of the first embodiment.

[0040] Figure 5 This is a cross-sectional view of the magnetoresistive effect element in the second embodiment.

[0041] Figure 6 is a cross-sectional view of a magnetoresistive effect element of the third embodiment.

[0042] Figure 7 is a plan view of a magnetoresistive effect element of the third embodiment.

[0043] Figure 8 is a plan view of a magnetoresistive effect element of the first modification.

[0044] Figure 9 is a plan view of a magnetoresistive effect element of the second modification.

[0045] Figure 10 is a cross-sectional view of a magnetoresistive effect element of the fourth embodiment.

[0046] Figure 11 is another cross-sectional view of a magnetoresistive effect element of the fourth embodiment.

[0047] Figure 12 is a cross-sectional view of a magnetoresistive effect element of the fifth embodiment.

[0048] Figure 13 is a cross-sectional view of a magnetization rotation element of the sixth embodiment.

[0049] Figure 14 is a schematic view of an example of a high frequency device.

[0050] Symbol explanation

[0051] 1 first ferromagnetic layer

[0052] 2 second ferromagnetic layer

[0053] 3 nonmagnetic layer

[0054] 20 spin orbit torque wiring

[0055] 21 first region

[0056] 22 second region

[0057] 23 third region

[0058] 30, 31, 32, 33 low resistance layer

[0059] 30a first end

[0060] 30b second end

[0061] 50 oxide layer

[0062] 60 protrusion

[0063] 70 second oxide layer

[0064] 100, 101, 102, 103, 104, 105, 106 magnetoresistive effect element

[0065] 107 magnetization rotation element

[0066] 200 magnetic recording array

[0067] 201 high-frequency device DETAILED DESCRIPTION

[0068] Hereinafter, the present embodiment will be described in detail with appropriate reference to the accompanying drawings. In the drawings used in the following description, in order to make the features easy to understand, a portion that becomes a feature is sometimes shown enlarged for convenience, and the dimensional proportions and the like of each constituent element are sometimes different from the actual ones. The materials, dimensions, and the like exemplified in the following description are merely examples, and the present application is not limited thereto, and can be appropriately changed and implemented within a range where the effects of the present application are exerted.

[0069] First, directions are defined. One direction of one face of a substrate Sub (refer to Fig. 1) to be described later is set as an x direction, and a direction orthogonal to the x direction is set as a y direction. The x direction is a direction in which a spin-orbit torque wire 20 to be described later extends, and is a length direction of the spin-orbit torque wire 20. A z direction is a direction orthogonal to the x direction and the y direction. The z direction is an example of a stacking direction. Hereinafter, sometimes the +z direction is expressed as "up" and the -z direction is expressed as "down". The up and down do not necessarily coincide with the direction of the applied gravity. Figure 2 In the present specification, "extending in the x direction" means that, for example, the dimension in the x direction is larger than the smallest dimension among the dimensions in the x direction, the y direction, and the z direction. The same applies to the case of extending in the other directions. In addition, in the present specification, "connection" is not limited to the case of physical connection. For example, the case where other layers are interposed between two layers to connect them is also included in "connection", not limited to the case where the two layers are in physical contact. In addition, the case where two components are electrically connected is also included in "connection".

[0070] "First Embodiment"

[0071]

[0072] Figure 1 is a structural view of a magnetic recording array 200 of the first embodiment. The magnetic recording array 200 is provided with a plurality of magnetoresistive effect elements 100, a plurality of write wires Wp1 to Wpn, a plurality of common wires Cm1 to Cmn, a plurality of read wires Rp1 to Rpn, a plurality of first switching elements 110, a plurality of second switching elements 120, and a plurality of third switching elements 130. The magnetic recording array 200 can be used in, for example, a magnetic memory or the like.

[0073] ​The write lines Wpl to Wpn electrically connect a power source and one or more of the magnetoresistive elements 100. The common lines Cml to Cmn are lines used in both writing data and reading data. The common lines Cml to Cmn electrically connect a reference potential and one or more of the magnetoresistive elements 100. The reference potential is, for example, ground. The common lines Cml to Cmn can be provided to each of the plurality of magnetoresistive elements 100, or can be provided across the plurality of magnetoresistive elements 100. The read lines Rpl to Rpn electrically connect a power source and one or more of the magnetoresistive elements 100. The power source is connected to the magnetic recording array 200 when in use.

[0074] Figure 1 The first switch element 110, the second switch element 120, and the third switch element 130 are connected to each of the magnetoresistive elements 100. The first switch element 110 is connected between the magnetoresistive element 100 and the write line Wpl to Wpn. The second switch element 120 is connected between the magnetoresistive element 100 and the common line Cml to Cmn. The third switch element 130 is connected between the magnetoresistive element 100 and the read line Rpl to Rpn.

[0075] If the first switch element 110 and the second switch element 120 are made ON, a write current flows between the write line Wpl to Wpn and the common line Cml to Cmn connected to the specified magnetoresistive element 100. If the second switch element 120 and the third switch element 130 are made ON, a read current flows between the common line Cml to Cmn and the read line Rpl to Rpn connected to the specified magnetoresistive element 100.

[0076] The first switch element 110, the second switch element 120, and the third switch element 130 are elements that control the flow of current. The first switch element 110, the second switch element 120, and the third switch element 130 are, for example, elements that use a phase change of a crystalline layer, such as a transistor, a bidirectional threshold switch (OTS: Ovonic Threshold Switch), elements that use a change in energy band structure, such as a metal-insulator transition (MIT) switch, elements that use a breakdown voltage, such as a zener diode and an avalanche diode, or elements in which conductivity changes with a change in atomic position.

[0077] The first switch element 110, the second switch element 120, and the third switch element 130 can be shared by the magnetoresistance effect element 100 connected to the same wiring. For example, in the case of sharing the first switch element 110, one first switch element 110 is provided upstream of the write wirings Wp1 to Wpn. For example, in the case of sharing the second switch element 120, one second switch element 120 is provided upstream of the common wirings Cm1 to Cmn. For example, in the case of sharing the third switch element 130, one third switch element 130 is provided upstream of the read wirings Rp1 to Rpn.

[0078] Figure 2 is a cross-sectional view of a feature of the magnetic recording array 200 of the first embodiment. Figure 2 is a cross-section taken along an xz plane passing through the center of the width of the spin-orbit torque wiring 20 in the y direction.

[0079] Figure 2 The first switch element 110 and the second switch element 120 shown are transistors Tr. The third switch element 130 is electrically connected to the electrode E, for example, is located Figure 2 in the y direction. The transistor Tr is, for example, a field-effect type transistor having a gate electrode G, and a source electrode S and a drain electrode D formed on a gate insulating film GI and a substrate Sub. The substrate Sub is, for example, a semiconductor substrate.

[0080] The transistor Tr and the magnetoresistance effect element 100 are electrically connected via conductive portions 41, 42 and a connection wiring Cw. In addition, the transistor Tr and the write wiring Wp or the common wiring Cm are connected by the connection wiring Cw. The connection wiring Cw is sometimes referred to as, for example, a via wiring. The connection wiring Cw contains a material having electrical conductivity. The connection wiring Cw extends, for example, in the z direction.

[0081] The periphery of the magnetoresistance effect element 100 and the transistor Tr is covered with an insulating layer In. The insulating layer In is an interlayer insulating layer that insulates between wirings or between elements of a multilayer wiring. The insulating layer In is, for example, a silicon oxide (SiO x ), a silicon nitride (SiN x ), a silicon carbide (SiC), chromium nitride, silicon carbonitride (SiCN), silicon oxynitride (SiON), aluminum oxide (Al2O3), zirconium oxide (ZrO x ), or the like.

[0082] Figure 3 is a cross-sectional view of the magnetoresistance effect element 100 of the first embodiment. Figure 4 is a plan view of the magnetoresistance effect element 100 of the first embodiment. Figure 3 is a cross-section of the magnetoresistance effect element 100 taken along an xz plane passing through the center of the width of the spin-orbit torque wiring 20 in the y direction.Figure 4 is a plan view of the magnetic resistance effect element 100 from the z direction.

[0083] The magnetic resistance effect element 100 includes a laminate 10, a spin-orbit torque wiring 20, a low resistance layer 30, a conductive portion 41, a conductive portion 42, and an electrode E. A resistance value of the laminate 10 changes by injecting a spin from the spin-orbit torque wiring 20 to the laminate 10. The magnetic resistance effect element 100 is a magnetic element using a spin-orbit torque (SOT), and is sometimes referred to as a spin-orbit torque type magnetic resistance effect element, a spin injection type magnetic resistance effect element, a spin current magnetic resistance effect element.

[0084] The laminate 10 is laminated on the spin-orbit torque wiring 20. There can be other layers between the laminate 10 and the spin-orbit torque wiring 20. The laminate 10 is sandwiched by the spin-orbit torque wiring 20 and the electrode E in the z direction. The laminate 10 is a columnar body. A plan view shape of the laminate 10 from the z direction is, for example, a circular shape, an elliptical shape, a quadrangular shape.

[0085] The laminate 10 has a first ferromagnetic layer 1, a second ferromagnetic layer 2, and a nonmagnetic layer 3. The first ferromagnetic layer 1 is, for example, in contact with the spin-orbit torque wiring 20 and is laminated on the spin-orbit torque wiring 20. A spin is injected from the spin-orbit torque wiring 20 to the first ferromagnetic layer 1. The magnetization of the first ferromagnetic layer 1 receives a spin-orbit torque (SOT) by the injected spin, and the orientation direction changes. The second ferromagnetic layer 2 is located in the z direction of the first ferromagnetic layer 1. The first ferromagnetic layer 1 and the second ferromagnetic layer 2 sandwich the nonmagnetic layer 3 in the z direction.

[0086] The first ferromagnetic layer 1 and the second ferromagnetic layer 2 each have a magnetization. The magnetization of the second ferromagnetic layer 2 is difficult to change in the orientation direction compared to the magnetization of the first ferromagnetic layer 1 when a prescribed external force is applied. The first ferromagnetic layer 1 is sometimes referred to as a magnetization free layer, and the second ferromagnetic layer 2 is sometimes referred to as a magnetization fixed layer, a magnetization reference layer. The laminate 10 changes in the resistance value according to the difference in the relative angle of the magnetization of the first ferromagnetic layer 1 and the second ferromagnetic layer 2 sandwiching the nonmagnetic layer 3.

[0087] The first ferromagnetic layer 1 and the second ferromagnetic layer 2 include a ferromagnetic substance. The ferromagnetic substance is, for example, a metal selected from Cr, Mn, Co, Fe, and Ni, an alloy containing one or more of these metals, an alloy containing these metals and at least one or more of B, C, and N, and the like. The ferromagnetic substance is, for example, a Co-Fe alloy, a Co-Fe-B alloy, a Ni-Fe alloy, a Co-Ho alloy, a Sm-Fe alloy, a Fe-Pt alloy, a Co-Pt alloy, a CoCrPt alloy.

[0088] The first ferromagnetic layer 1 and the second ferromagnetic layer 2 may also contain Whistler alloys. Whistler alloys contain intermetallic compounds with a chemical composition of XYZ or X2YZ. X is a transition metal or noble metal element from the Co, Fe, Ni, or Cu group in the periodic table; Y is a transition metal from the Mn, V, Cr, or Ti group, or an element of X; and Z is a typical element from Groups III to V. Examples of Whistler alloys include Co2FeSi, Co2FeGe, Co2FeGa, Co2MnSi, and Co2Mn. 1-a Fe a Al b Si 1-b Co2FeGe 1-c Ga c Etc. Whistler alloys have high spin polarization.

[0089] The laminate 10 may also have an antiferromagnetic layer on the side of the second ferromagnetic layer 2 opposite to the non-magnetic layer 3 via a spacer layer. The second ferromagnetic layer 2, the spacer layer, and the antiferromagnetic layer constitute a synthetic antiferromagnetic structure (SAF structure). The synthetic antiferromagnetic structure consists of two magnetic layers sandwiching a non-magnetic layer. Antiferromagnetic coupling is achieved through the second ferromagnetic layer 2 and the antiferromagnetic layer, resulting in a greater coercivity of the second ferromagnetic layer 2 than in the case without an antiferromagnetic layer. The antiferromagnetic layer may be, for example, IrMn or PtMn. The spacer layer may contain, for example, at least one selected from Ru, Ir, and Rh.

[0090] The laminate 10 may also have layers other than the first ferromagnetic layer 1, the second ferromagnetic layer 2, and the nonmagnetic layer 3. For example, a base layer may also be present between the spin-orbit torque wiring 20 and the laminate 10. The base layer can improve the crystallinity of the layers constituting the laminate 10.

[0091] The spin-orbit torque wiring 20 is, for example, connected to one side of the laminate 10. The spin-orbit torque wiring 20 is an example of wiring and is a write wiring used to write data to the magnetoresistive element 100. The spin-orbit torque wiring 20, for example, when viewed from the z-direction, has a longer length in the x-direction than in the y-direction, and extends along the x-direction. At least a portion of the spin-orbit torque wiring 20, together with the non-magnetic layer 3, clamps the first ferromagnetic layer 1 in the z-direction.

[0092] The spin orbit torque wiring 20 generates a spin current by the spin Hall effect when a current I flows, and injects a spin into the first ferromagnetic layer 1. The spin orbit torque wiring 20, for example, imparts a spin orbit torque (SOT) that can cause a component of the magnetization of the first ferromagnetic layer 1 to reverse to the magnetization of the first ferromagnetic layer 1. The spin Hall effect is a phenomenon in which a spin current is induced in a direction orthogonal to the direction in which a current flows, based on a spin orbit interaction in the case where a current flows. The spin Hall effect is the same as the ordinary Hall effect in that the moving direction of a moving (mobile) charge (electron) is bent. In the case of the ordinary Hall effect, the moving direction of a charged particle moving in a magnetic field is bent by the Lorentz force. In contrast, in the spin Hall effect, the moving direction of a spin is bent only by the movement of an electron (only the flow of a current) even if there is no magnetic field.

[0093] For example, if a current flows in the spin orbit torque wiring 20, a first spin oriented in one direction and a second spin oriented in the opposite direction to the first spin are bent in directions orthogonal to the direction in which the current I flows by the spin Hall effect, respectively. For example, a first spin oriented in the -y direction is bent in the +z direction, and a second spin oriented in the +y direction is bent in the -z direction.

[0094] In the case of a non-magnetic body (a material that is not a ferromagnetic body), the number of electrons of the first spin and the number of electrons of the second spin generated by the spin Hall effect are equal. That is, the number of electrons of the first spin oriented toward the +z direction and the number of electrons of the second spin oriented toward the -z direction are equal. The first spin and the second spin flow in a direction in which the uneven distribution of the spins is eliminated. In the movement of the first spin and the second spin in the z direction, the flow of charges cancel each other out, and thus the amount of current becomes zero. In particular, a spin current that does not accompany a current is referred to as a pure spin current.

[0095] The flow of electrons of the first spin is represented as J ↑ , the flow of electrons of the second spin is represented as J ↓ , and the spin current is represented as J S . When J S = J ↑ - J ↓ is defined. The spin current J S is generated in the z direction. The first spin is injected from the spin orbit torque wiring 20 to the first ferromagnetic layer 1.

[0096] The spin orbit torque wiring 20 contains any of a metal, an alloy, an intermetallic compound, a metal boride, a metal carbide, a metal silicide, and a metal phosphide that has a function of generating a spin current by the spin Hall effect when a current I flows.

[0097] The spin-orbit torque wiring 20 contains, for example, a non-magnetic heavy metal as a main component. The heavy metal refers to a metal having a specific gravity of or more than yttrium (Y). The non-magnetic heavy metal is, for example, a non-magnetic metal having an atomic number of or more than 39, which has a d electron or an f electron in the outermost shell. The spin-orbit torque wiring 20 is composed of, for example, Hf, Ta, and W. The non-magnetic heavy metal produces a strong spin-orbit interaction compared to other metals. The spin Hall effect is generated by the spin-orbit interaction, and spins are easily distributed unevenly in the spin-orbit torque wiring 20, and a spin current J is easily generated S .

[0098] In addition, the spin-orbit torque wiring 20 contains a magnetic metal. The magnetic metal is a ferromagnetic metal or an antiferromagnetic metal. A trace amount of the magnetic metal contained in the non-magnetic body becomes a scattering factor of the spin. The trace amount is, for example, 3% or less of the total molar ratio of the elements constituting the spin-orbit torque wiring 20. If the spin is scattered by the magnetic metal, the spin-orbit interaction is enhanced, and the generation efficiency of the spin current with respect to the current becomes high.

[0099] The spin-orbit torque wiring 20 can also include a topological insulator. The topological insulator is a substance in which the inside is an insulator or a high-resistance body, but a metallic state in which the spins are polarized is generated at the surface. The topological insulator generates an internal magnetic field by the spin-orbit interaction. The topological insulator exhibits a new topological phase by the effect of the spin-orbit interaction even without an external magnetic field. The topological insulator can efficiently generate a pure spin current by a strong spin-orbit interaction and a destruction of inversion symmetry at the edge.

[0100] The topological insulator is, for example, SnTe, Bi 1.5 Sb 0.5 Te 1.7 Se 1.3 , TlBiSe2, Bi2Te3, Bi 1-x Sb x , (Bi 1-x Sb x )2Te3, or the like. The topological insulator can efficiently generate a spin current.

[0101] The spin-orbit torque wiring 20 can also contain an element constituting a low-resistance layer 30 described later. If the spin-orbit torque wiring 20 contains the element constituting the low-resistance layer 30, the resistance value of the spin-orbit torque wiring 20 is reduced, and the heat generation of the spin-orbit torque wiring 20 is suppressed. In the case where the spin-orbit torque wiring 20 contains the element constituting the low-resistance layer 30, the concentration thereof is, for example, increased in the order of a third region 23, a second region 22, and a first region 21 described later. The concentration of the element constituting the low-resistance layer 30 in the first region 21, which generates the spin injected into the first ferromagnetic layer 1, is preferably relatively low compared to the other regions.

[0102] The spin-orbit torque wiring 20 is divided into a first region 21, a second region 22, and a third region 23. The first region 21 is a region overlapping the first ferromagnetic layer 1 as viewed in the z direction. The second region 22 is a region not overlapping either the first ferromagnetic layer 1 or the low-resistance layer 30 as viewed in the z direction. The third region 23 is a region overlapping the low-resistance layer 30 as viewed in the z direction. For example, the first region 21, the second region 22, and the third region 23 are located in this order in the vicinity of the first ferromagnetic layer 1. The second region 22 is located, for example, between the first region 21 and the third region 23.

[0103] The thickness of the spin-orbit torque wiring 20 gradually decreases toward a prescribed value as it moves away from the first ferromagnetic layer 1, for example. The thickness of the first region 21 is thicker than the thickness of the second region 22, and the thickness of the second region 22 is thicker than the thickness of the third region 23.

[0104] The low-resistance layer 30 extends over the spin-orbit torque wiring 20. The low-resistance layer 30 is located in a region not overlapping the laminate 10 as viewed in the z direction.

[0105] The low-resistance layer 30 has a lower resistivity than the spin-orbit torque wiring 20. The low-resistance layer 30 contains, for example, any one selected from the group consisting of Be, Na, Mg, Al, Ca, Co, Cu, Zn, Mo, Rh, Ag, Ir, and Au as a main component. The main component refers to a component occupying 50% or more of the material constituting the low-resistance layer 30. The low-resistance layer 30 is, for example, a single metal or an alloy selected from any one of Be, Na, Mg, Al, Ca, Co, Cu, Zn, Mo, Rh, Ag, Ir, and Au.

[0106] The low-resistance layer 30 can further contain an element having a specific gravity of yttrium (Y) or more as a subcomponent. The subcomponent is present in a smaller proportion than the main component, for example, in a proportion of 20% or less of the material constituting the low-resistance layer 30. If the low-resistance layer 30 contains a heavy metal, the mobility of the low-resistance layer 30 can be suppressed. In addition, by the spin Hall effect, the amount of spin generated by the low-resistance layer 30 can be increased.

[0107] The low-resistance layer 30 has a smaller thickness than the spin-orbit torque wiring 20. The film thickness of the first end 30a of the low-resistance layer 30 is smaller than the film thickness of the second end 30b. The first end 30a of the low-resistance layer 30 is the end portion on the first ferromagnetic layer 1 side of the low-resistance layer 30. The second end 30b is the end portion on the side opposite the first end 30a of the low-resistance layer 30, and is the end portion of the low-resistance layer 30 located away from the first ferromagnetic layer 1. The film thickness of the low-resistance layer 30 gradually increases toward a certain value as it moves away from the first end 30a.

[0108] The thickness of the low-resistance layer 30 is, for example, 5 times or less the bonding radius of the elements constituting the low-resistance layer 30. The bonding radius is a value of half the interatomic distance of the next neighboring atoms of the crystal of the elements constituting the low-resistance layer 30. The bonding radius can be calculated from the size of the crystal lattice described in the database of the National Institute for Materials Science (NIMS) of Japan (https: / / crystdb.nims.go.jp / ). The bonding radius is calculated from the size of the crystal lattice even if the low-resistance layer 30 is not crystallized. Specifically, the thickness of the low-resistance layer 30 is, for example, 5 nm or less. The following.

[0109] The conductive portions 41 and 42 sandwich the laminate 10 in the x-direction when viewed from the z-direction. The conductive portions 41 and 42 are connected to, for example, the connection wiring Cw. The conductive portions 41 and 42 are composed of a material having excellent conductivity. The conductive portions 41 and 42 contain, for example, any one selected from Ag, Cu, Co, Al, and Au.

[0110] The electrode E is located on the side of the laminate 10 opposite the spin-orbit torque wiring 20. The electrode E is in contact with, for example, the second ferromagnetic layer 2 of the laminate 10. The electrode E is composed of a material having conductivity. The electrode E contains, for example, any one selected from Al, Cu, Ta, Ti, Zr, NiCr, nitrides (for example, TiN, TaN, SiN). The electrode E is, for example, a laminate of NiCr and Ta. The electrode E can function as a cap layer of the laminate 10. In addition, the electrode E can also function as a hard mask for the manufacturing process of the magnetoresistive element 100.

[0111] The electrode E can be composed of, for example, a transparent electrode material. The electrode E can also be, for example, indium zinc oxide (IZO), indium-tin oxide (ITO), tin oxide (SnO2), antimony-tin oxide (ATO), zinc oxide (ZnO), fluorine-doped tin oxide (FTO), indium oxide (In2O3), or the like. When the electrode E is transparent, it is easy to read the orientation direction of the magnetization of the first ferromagnetic layer 1 or the second ferromagnetic layer 2 from the outside.

[0112] Next, the manufacturing method of the magnetoresistive element 100 will be described. The manufacturing method of the magnetoresistive element 100 has, for example, a first lamination process, a first processing process, a second lamination process, a first insulation process, and a second processing process.

[0113] First, before the first lamination process, a substrate on which a laminate film is prepared. First, impurities are doped at a prescribed position of the substrate Sub to form a source S and a drain D. Next, a gate insulating film GI and a gate electrode G are formed between the source S and the drain D. The source S, the drain D, the gate insulating film GI, and the gate electrode G become a transistor Tr.

[0114] Next, an insulating layer of a certain thickness is formed so as to cover the transistor Tr. Further, an opening portion is formed in the insulating layer, and a connection wiring Cw is formed by filling a conductor into the opening portion.

[0115] Next, an insulating layer of a certain thickness is further laminated so as to cover these. Further, a conductive portion 41, 42 is obtained by forming an opening at a position overlapping with the connection wiring Cw and filling a conductor. The conductive portion 41, 42 uses, for example, a material harder than the connection wiring Cw. The surface of the insulating layer and the conductive portion 41, 42 is subjected to chemical mechanical polishing (CMP). By using a hard material for the conductive portion 41, 42, the planarity of the surface is improved.

[0116] Next, a first lamination process is performed. In the first lamination process, a wiring layer, a magnetic layer, a non-magnetic layer, and a magnetic layer are sequentially laminated on the base on which the insulating layer In and the conductive portion 41, 42 are exposed on the surface. Each layer is laminated by, for example, a sputtering method, a chemical vapor deposition (CVD) method, an electron beam deposition method (EB deposition method), or an atomic laser deposition method.

[0117] Next, a first processing process is performed. In the first processing process, the laminated film composed of the magnetic layer, the non-magnetic layer, and the magnetic layer is processed into a desired shape, and a laminate 10 is formed. The magnetic layer becomes the first ferromagnetic layer 1 or the second ferromagnetic layer 2, and the non-magnetic layer becomes the non-magnetic layer 3. The processing is performed by, for example, a known method such as photolithography. A portion of the laminated film is removed, and the wiring layer is exposed. When the laminated film is processed, a portion of the surface of the wiring layer at a position not overlapping with the laminate 10 is etched.

[0118] Next, a second lamination process is performed. In the second lamination process, a conductive layer having a resistance lower than that of the wiring layer is laminated on the wiring layer. The conductive layer is laminated by, for example, a sputtering method, a chemical vapor deposition (CVD) method, an electron beam deposition method (EB deposition method), or an atomic laser deposition method. The conductive layer is laminated on the wiring layer at a certain distance from the laminate 10 by, for example, a shadow effect of the laminate 10.

[0119] It is also possible to etch the conductive material attached to the side wall of the laminate 10 after the second lamination process. The etching is performed, for example, from a slanting direction inclined with respect to the z direction. By the etching, the conductive material attached to the side wall of the laminate 10 is removed. By removing the conductive material, short-circuiting of the first ferromagnetic layer 1 and the second ferromagnetic layer 2 can be prevented. Further, by removing the conductive material attached to the side wall of the first ferromagnetic layer 1, the flow of heat to the conductive material and the flow of heat to the x direction via the low-resistance layer 30 can be suppressed.

[0120] In addition, the conductive material adhering to the side wall of the laminated body 10 can be oxidized after the second lamination process. By oxidation, the conductivity of the conductive material adhering to the side wall of the laminated body 10 is reduced. By reducing the conductivity of the conductive material adhering to the side wall of the first ferromagnetic layer 1, the flow of heat to the conductive material and the flow of heat to the x direction via the low-resistance layer 30 can be suppressed. The etching process and the oxidation process of the conductive material can be used in combination.

[0121] Next, a first insulation process is performed. In the first insulation process, an interlayer insulating layer is laminated over the wiring layer, the laminated body 10, and the conductive layer. The interlayer insulating layer is laminated, for example, by a sputtering method, a chemical vapor deposition (CVD) method, an electron beam deposition method (EB deposition method), or an atomic laser deposition method.

[0122] Next, a second processing process is performed. In the second processing process, the wiring layer and the conductive layer, which have been extended in the in-plane direction via the interlayer insulating layer, are processed into a predetermined shape, and the connection in the in-plane direction is cut. The processing is performed, for example, by a known method such as photolithography. The wiring layer becomes the spin-orbit torque wiring 20 by the processing, and the conductive layer becomes the low-resistance layer 30 by the processing.

[0123] Next, a second insulation process is performed. In the second insulation process, an opening formed in the second processing process for cutting the wiring layer and the conductive layer is filled with an insulator. By such a step, the magnetic recording array 200 of the first embodiment can be obtained.

[0124] Next, the operation of the magnetoresistive effect element 100 of the first embodiment will be described. The magnetoresistive effect element 100 has a data write operation and a data read operation.

[0125] First, the operation of recording data in the magnetoresistive effect element 100 will be described. First, the first switching element 110 and the second switching element 120 connected to the magnetoresistive effect element 100 in which data is to be recorded are made ON. If the first switching element 110 and the second switching element 120 are made ON, a write current flows in the spin-orbit torque wiring 20. If the write current flows in the spin-orbit torque wiring 20, a spin Hall effect occurs, and a spin is injected into the first ferromagnetic layer 1. The spin injected into the first ferromagnetic layer 1 exerts a spin-orbit torque (SOT) on the magnetization of the first ferromagnetic layer 1, and changes the orientation direction of the magnetization of the first ferromagnetic layer 1. If the direction of the flow of the current is reversed, the direction of the spin injected into the first ferromagnetic layer 1 is reversed, and thus the orientation direction of the magnetization can be freely controlled.

[0126] The resistance value in the stacking direction of the stack 10 becomes smaller when the magnetization of the first ferromagnetic layer 1 and the magnetization of the second ferromagnetic layer 2 are parallel, and becomes larger when the magnetization of the first ferromagnetic layer 1 and the magnetization of the second ferromagnetic layer 2 are anti-parallel. The resistance value in the stacking direction of the stack 10 is recorded as data in the magnetoresistive effect element 100.

[0127] Next, an operation of reading data from the magnetoresistive effect element 100 will be described. First, the first switching element 110 or the second switching element 120 and the third switching element 130 connected to the magnetoresistive effect element 100 in which data is to be recorded are set to ON. If each switching element is thus set, a read current flows in the stacking direction of the stack 10. If the resistance value in the stacking direction of the stack 10 differs according to Ohm's law, the output voltage differs. Therefore, for example, by reading the voltage in the stacking direction of the stack 10, data recorded in the magnetoresistive effect element 100 can be read.

[0128] The magnetoresistive effect element 100 of the first embodiment can make data writing easy while suppressing heat generation in the wiring. The reason for this will be described below.

[0129] The spin-orbit torque wiring 20 contains heavy metals in most cases. Heavy metals have a large resistance and become a heat generation source. Heat generated in the spin-orbit torque wiring 20 becomes a cause of degradation of the spin-orbit torque wiring 20. On the other hand, heat generated in the spin-orbit torque wiring 20 reduces the stability of the magnetization of the first ferromagnetic layer 1 at the time of writing and makes data writing easy.

[0130] The first ferromagnetic layer 1 of the spin-orbit torque wiring 20 and a position located at the midpoint in the x direction of the conductive portions 41 and 42 are particularly likely to store heat when viewed from the z direction. The reason for this is that the midpoint is far from the electrode E and the conductive portions 41 and 42, which are heat dissipation paths.

[0131] The low-resistance layer 30 transmits heat generated in the third region 23, in which heat is likely to be stored, to the conductive portions 41 and 42. That is, if the low-resistance layer 30 is present on the third region 23, heat generation in the third region 23 is suppressed, and degradation of the spin-orbit torque wiring 20 is suppressed.

[0132] On the other hand, the low-resistance layer 30 is not present on the first region 21 and the second region 22. Therefore, heat generated in the first region 21 and the second region 22 is transmitted in the z direction via the electrode E. The stability of the magnetization of the first ferromagnetic layer 1 is reduced by heat generated in the first region 21 and the second region 22 not easily flowing in the x direction, and data writing becomes easy.

[0133] Further, by making the thickness of the low-resistance layer 30 thinner than the thickness of the spin-orbit torque wiring 20, the heat generated in the first region 21 and the second region 22 can be inhibited from flowing excessively in the x direction.

[0134] Further, by making the thickness of the low-resistance layer 30 thicker as it is farther from the first ferromagnetic layer 1, the heat dissipation direction of the spin-orbit torque wiring 20 can be further controlled.

[0135] "Second Embodiment"

[0136] Figure 5 is a cross-sectional view of the magnetoresistive effect element 101 of the second embodiment. Figure 5 is a cross section of the magnetoresistive effect element 101 taken on an xz plane that passes through the center of the width in the y direction of the spin-orbit torque wiring 20.

[0137] The magnetoresistive effect element 101 of the second embodiment is provided with an oxide layer 50, in this respect differing from the magnetoresistive effect element 100 of the first embodiment. The same symbols are affixed to structures common to the magnetoresistive effect element 101 and the magnetoresistive effect element 100, and the description thereof is omitted.

[0138] The oxide layer 50 is in contact with the side surface of the laminate 10 and the second region 22 of the spin-orbit torque wiring 20. The oxide layer 50 is in contact with at least the side surface of the first ferromagnetic layer 1 and the upper surface of the second region 22. The oxide layer 50 is, for example, an oxide of the material that constitutes the low-resistance layer 30. As described above, the oxide layer 50 is formed, for example, by oxidizing the conductive material after the second lamination process.

[0139] The magnetoresistive effect element 101 of the second embodiment can achieve the same effects as the magnetoresistive effect element 100 of the first embodiment. Further, the oxide layer 50 prevents short-circuiting of the first ferromagnetic layer 1 and the second ferromagnetic layer 2. Further, the Rashba effect occurs at the interface between the oxide of the material that constitutes the low-resistance layer 30 and the conductor, and the spin amount injected into the first ferromagnetic layer 1 increases.

[0140] "Third Embodiment"

[0141] Figure 6 is a cross-sectional view of the magnetoresistive effect element 102 of the third embodiment. Figure 6 is a cross section of the magnetoresistive effect element 101 taken on an xz plane that passes through the center of the width in the y direction of the spin-orbit torque wiring 20. Figure 7 is a plan view of the magnetoresistive effect element 102 of the third embodiment.

[0142] In the magnetic resistance effect element 102 of the third embodiment, the shape of the low-resistance layer 31 is different from that of the magnetic resistance effect element 100 of the first embodiment. The same symbols are attached to the structures common to the magnetic resistance effect element 101 and the magnetic resistance effect element 100, and the description thereof is omitted.

[0143] The low-resistance layer 31 is discontinuous on a cross section taken along the xz plane. The low-resistance layer 31, for example, is scattered in island shapes in the xy plane. If the designed thickness of the low-resistance layer 31 at the time of film formation is sufficiently thin, the atoms constituting the low-resistance layer 31 grow in island shapes and become the low-resistance layer 31.

[0144] The magnetic resistance effect element 102 of the third embodiment can achieve the same effects as the magnetic resistance effect element 100 of the first embodiment. In addition, by discontinuing the low-resistance layer 31 in the x direction, the heat transfer in the x direction can be suppressed. Thus, the writing of data can be made easier while suppressing the heat generation in the wiring.

[0145] In addition, Figure 8 is a plan view of a magnetic resistance effect element 103 which is a first modification example. Figure 9 is a plan view of a magnetic resistance effect element 104 which is a second modification example. The magnetic resistance effect elements 103 and 104 are modification examples of the magnetic resistance effect element 102 of the third embodiment.

[0146] Figure 8 The low-resistance layer 32 and Figure 9 The low-resistance layers 32 and 33 are discontinuous on a cross section taken along the xz plane. The low-resistance layer 32 is a continuous film having a plurality of openings. The low-resistance layer 33 is constituted by a plurality of films formed in strip shapes. In any case, the heat transfer in the x direction can be suppressed, and the same effects as the magnetic resistance effect element 102 of the third embodiment can be achieved.

[0147] "Fourth Embodiment"

[0148] Figure 10 is a cross-sectional view of a magnetic resistance effect element 105 of the fourth embodiment. Figure 10 is a cross section of the magnetic resistance effect element 105 taken on an xz plane passing through the center of the width of the spin-orbit torque wiring 20 in the y direction.

[0149] The magnetic resistance effect element 105 of the fourth embodiment has a protrusion 60, which is different from the magnetic resistance effect element 100 of the first embodiment in this point. The same symbols are attached to the structures common to the magnetic resistance effect element 105 and the magnetic resistance effect element 100, and the description thereof is omitted.

[0150] The protrusion 60 protrudes in the z direction from the low-resistance layer 30 at a position apart from the boundary of the second region 22 and the third region 23 as viewed in the z direction. The protrusion 60 has conductivity.

[0151] The protrusion 60 includes a material having electrical conductivity, for example, is composed of the same material as the low-resistance layer 30. In the case where the low-resistance layer 30 and the protrusion 60 are composed of the same material, the protrusion 60 is defined by the following steps. On an xz plane passing through the center of the width in the y direction of the spin-orbit torque wire 20, the slopes of the tangent lines to the upper surface of the low-resistance layer 30 are sequentially found from the first end 30a of the low-resistance layer 30. In the case where the absolute values of the slopes of the tangent lines decrease or are constant, the region on the first ferromagnetic layer 1 side than the point of tangency is the low-resistance layer 30. On the other hand, in the case where the absolute values of the slopes of the tangent lines start to increase, the region on the side farther from the first ferromagnetic layer 1 than the point of tangency is composed of the low-resistance layer 30 and the protrusion 60. The boundary line between the low-resistance layer 30 and the protrusion 60 is a straight line connecting the point of tangency immediately before the absolute values of the slopes of the tangent lines start to increase and the upper end of the second end 30b.

[0152] The apex of the protrusion 60 is, for example, located at the position of the face on the opposite side of the face of the first ferromagnetic layer 1 that is in contact with the spin-orbit torque wire 20.

[0153] In addition, Figure 11 is another cross-sectional view of the magnetic resistance effect element 105 of the fourth embodiment. Figure 11 is a yz cross-sectional plane along the A-A line in Figure 10 As shown in Figure 11 , the total area of the protrusion 60 and the low-resistance layer 30 is, for example, larger than the area of the spin-orbit torque wire 20. In addition, the width in the y direction of the protrusion 60 is narrower than the width in the y direction of the low-resistance layer 30, and the width in the y direction of the low-resistance layer 30 is narrower than the width in the y direction of the spin-orbit torque wire 20.

[0154] The magnetic resistance effect element 105 of the fourth embodiment can achieve the same effects as the magnetic resistance effect element 100 of the first embodiment. In addition, by having the protrusion 60 at a position overlapping the third region 23 where heat is likely to accumulate, it is possible to improve the heat dissipation of the heat generated in the third region 23. In addition, by the height of the protrusion 60 being a value or less, it is possible to reduce the heat reaching the protrusion 60 from the first ferromagnetic layer 1 by radiation, and it is possible to suppress the transfer of heat in the x direction. Thus, it is possible to make the writing of data easier while suppressing the heat generation in the wire.

[0155] "Fifth Embodiment"

[0156] Figure 12 is a cross-sectional view of the magnetic resistance effect element 106 of the fifth embodiment. Figure 12 is a cross-section of the magnetic resistance effect element 106 cut on an xz plane passing through the center of the width in the y direction of the spin-orbit torque wire 20.

[0157] The magnetoresistive effect element 106 of the fifth embodiment has the second oxide layer 70, unlike the magnetoresistive effect element 100 of the first embodiment. The same reference numerals are assigned to the same structures in the magnetoresistive effect element 106 as in the magnetoresistive effect element 100, and the description thereof is omitted.

[0158] The second oxide layer 70 covers the low-resistance layer 30. The second oxide layer 70 is stacked on the low-resistance layer 30. The second oxide layer 70 is, for example, an oxide of the material constituting the low-resistance layer 30. As described above, the second oxide layer 70 can be formed, for example, by oxidizing the conductive material after the second stacking process.

[0159] The magnetoresistive effect element 106 of the fifth embodiment can achieve the same effects as the magnetoresistive effect element 100 of the first embodiment. In addition, the Rashba effect occurs at the interface between the oxide of the material constituting the low-resistance layer 30 and the conductor, and the spin amount injected into the first ferromagnetic layer 1 increases.

[0160] "Sixth Embodiment"

[0161] Figure 13 is a cross-sectional view of the magnetization rotation element 107 of the sixth embodiment. Figure 13 is a cross-section of the magnetization rotation element 107 cut on an xz plane that passes through the center of the width in the y direction of the spin-orbit torque wire 20.

[0162] The magnetization rotation element 107 of the sixth embodiment does not have the nonmagnetic layer 3 and the second ferromagnetic layer 2, unlike the magnetoresistive effect element 100 of the first embodiment. The same reference numerals are assigned to the same structures in the magnetization rotation element 107 as in the magnetoresistive effect element 100, and the description thereof is omitted.

[0163] The magnetization rotation element 107 is an example of a spin element. The magnetization rotation element 107, for example, emits light to the first ferromagnetic layer 1 and evaluates light reflected by the first ferromagnetic layer 1. If the orientation direction of the magnetization changes according to the magneto-optical Kerr effect, the polarization state of the reflected light changes. The magnetization rotation element 107 can be used, for example, as an optical element such as an image display device that utilizes the difference in the polarization state of light.

[0164] In addition, the magnetization rotation element 107 can also be used alone as an anisotropic magnetic sensor, an optical element utilizing the magnetic Faraday effect, and the like.

[0165] The magnetization rotation element 107 of the sixth embodiment, from which only the nonmagnetic layer 3 and the second ferromagnetic layer 2 are removed, can achieve the same effects as the magnetoresistive effect element 100 of the first embodiment.

[0166] Thus far, the preferred embodiments of the present application have been exemplified based on the first to sixth embodiments, but the present application is not limited to these embodiments. For example, the characteristic structures in each of the embodiments can be applied to other embodiments. In addition, an example in which the magnetoresistive effect element is used as a magnetic memory has been described, but it can also be applied to a magnetoresistive effect element high-frequency device.

[0167] Figure 14 An example of a high-frequency device 201 is shown in FIG. 10. The high-frequency device 201 has the magnetoresistive effect element 100, an input port 90, lines 91, 92, a direct-current power supply 93, an inductor 94, a capacitor 95, and an output port 96.

[0168] The line 91 connects the magnetoresistive effect element 100 and the output port 96. The line 92 branches from the line 91, passes through the inductor 94 and the direct-current power supply 93, and reaches the ground Gd. The direct-current power supply 93, the inductor 94, and the capacitor 95 can use known devices. The inductor 94 cuts off the high-frequency component of the current and passes the constant component of the current. The capacitor 95 passes the high-frequency component of the current and cuts off the constant component of the current. The inductor 94 is disposed in a portion where the passage of the high-frequency current is desired to be suppressed, and the capacitor 95 is disposed in a portion where the passage of the direct-current is desired to be suppressed.

[0169] If an alternating-current current or an alternating-current magnetic field is applied to the spin-orbit torque wiring 20 from the input port 90, the magnetization of the first ferromagnetic layer 1 performs a precession motion. In terms of the magnetization of the first ferromagnetic layer 1, it vibrates strongly in a case where the frequency of the high-frequency current or the high-frequency magnetic field applied to the first ferromagnetic layer 1 is in the vicinity of the ferromagnetic resonance frequency of the first ferromagnetic layer 1, and it hardly vibrates in a case where the frequency of the high-frequency current or the high-frequency magnetic field applied to the first ferromagnetic layer 1 is far from the ferromagnetic resonance frequency of the first ferromagnetic layer 1. This phenomenon is called a ferromagnetic resonance phenomenon.

[0170] The resistance value of the laminated body 10 changes by the vibration of the magnetization of the first ferromagnetic layer 1. The direct-current power supply 93 applies a direct-current to the laminated body 10. The direct-current passes through in the laminating direction of the laminated body 10. The direct-current passes through the line 91, the line 92, the magnetoresistive effect element 100, and the ground Gd. The potential of the laminated body 10 changes according to Ohm's law. A high-frequency signal is output from the output port 96 according to the change in the potential (change in the resistance value) of the laminated body 10.

Claims

1. A magnetized rotating element, wherein provided are: a spin-orbit torque wiring; a first ferromagnetic layer laminated to the spin-orbit torque wiring; and a low-resistance layer laminated to a region not overlapping the first ferromagnetic layer as viewed from a lamination direction of the spin-orbit torque wiring, the spin-orbit torque wiring has a first region, a second region, and a third region, the first region overlaps the first ferromagnetic layer as viewed from the lamination direction, the second region does not overlap the first ferromagnetic layer and the low-resistance layer as viewed from the lamination direction, and is positioned between the first region and the third region, the third region overlaps the low-resistance layer as viewed from the lamination direction, the low-resistance layer has a lower resistivity than the spin-orbit torque wiring, the low-resistance layer has a smaller thickness than the spin-orbit torque wiring, a first end of the first ferromagnetic layer side of the low-resistance layer has a smaller film thickness than a second end of the low-resistance layer positioned away from the first ferromagnetic layer.

2. The magnetized rotating element according to claim 1, wherein an oxide layer is further provided, which is in contact with a side surface of the first ferromagnetic layer and the second region of the spin-orbit torque wiring.

3. The magnetized rotating element according to claim 2, wherein the oxide layer is an oxide of a material constituting the low-resistance layer.

4. The magnetized rotating element according to claim 1, wherein the low-resistance layer contains, as a main component, any one selected from the group consisting of Be, Na, Mg, Al, Ca, Co, Cu, Zn, Mo, Rh, Ag, Ir, Au.

5. The magnetized rotating element according to claim 4, wherein the low-resistance layer further contains, as a subcomponent, a nonmagnetic metal having an atomic number of 39 or more, which has d electrons or f electrons in an outermost shell.

6. The magnetized rotating element according to claim 1, wherein the low-resistance layer is discontinuous on a cross section of the spin-orbit torque wiring along a length direction and the lamination direction.

7. The magnetized rotating element according to claim 1, wherein a convex portion having conductivity is further provided, which protrudes from the low-resistance layer at a position away from a boundary between the second region and the third region as viewed from the lamination direction.

8. The magnetized rotating element according to claim 7, wherein an apex of the convex portion is positioned at a position lower than a surface opposite to a surface of the first ferromagnetic layer in contact with the spin-orbit torque wiring.

9. The magnetized rotating element according to claim 7 or 8, wherein on a cross section of the spin-orbit torque wiring orthogonal to the length direction, a total area of the convex portion and the low-resistance layer is larger than an area of the spin-orbit torque wiring.

10. The magnetized rotating element according to claim 1, wherein the spin-orbit torque wiring contains an element constituting the low-resistance layer.

11. The magnetized rotating element according to claim 10, wherein a concentration of the element constituting the low-resistance layer in the spin-orbit torque wiring decreases in the order of the third region, the second region, and the first region.

12. The magnetization rotating element according to claim 1, wherein a second oxide layer covering the low-resistance layer is provided.

13. A magnetoresistance effect element, wherein further comprising: the magnetization rotating element according to any one of claims 1 to 12; and a nonmagnetic layer and a second ferromagnetic layer which are sequentially stacked on a side of the first ferromagnetic layer opposite to the side on which the spin-orbit torque wiring is provided.

14. A magnetic recording array, wherein the magnetic recording array comprises a plurality of the magnetoresistance effect elements according to claim 13.

15. A high-frequency device, wherein the high-frequency device comprises the magnetoresistance effect element according to claim 13.

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