Electrothermal coupling analysis method and simulation terminal for passive circuits

Abstract

The present invention provides an electrothermal coupling analysis method and simulation terminal for passive circuits. The method comprises: transferring energy loss parameters in an electromagnetic field simulation model to a thermal simulation model; determining whether the ratio of a first circuit energy loss obtained by simulating the electromagnetic field simulation model to a second energy loss obtained by simulating the thermal simulation model is within a first preset range; if it is not within the preset range, it indicates that the parameter transfer between the two models is inaccurate and the mesh division is unreasonable, and the two models need to be meshed again until the requirements are met. The present invention corrects the parameters in the thermal simulation model according to the electromagnetic field simulation model, effectively improving the accuracy of the thermal simulation model, and can use the thermal simulation model to simulate and obtain accurate temperature simulation results, thereby effectively guiding heat dissipation and reliability optimization.

Description

Technical Field

[0001] The present invention relates to the field of communication technology, and in particular to an electrothermal coupling analysis method of a passive circuit and a simulation terminal. Background Art

[0002] With the rapid development of modern wireless communication technology, communication systems have higher and higher requirements for microwave circuits, and microwave circuits are constantly developing in the direction of miniaturization, integration, high frequency and high power. For high-power microwave circuits, due to the large input power, the heat dissipation environment of discontinuous parts such as circuit gaps and interconnects is poor, resulting in serious local temperature rise. During use, high-power discharge, breakdown and burning failures are prone to occur, causing unnecessary losses.

[0003] In the prior art, passive circuits such as high-power microwave circuits lack numerical analysis of electrothermal coupling, and the circuit reliability is not high enough. Summary of the invention

[0004] The embodiment of the present invention provides an electrothermal coupling analysis method and a simulation terminal for a passive circuit, so as to solve the problem that the passive circuit lacks numerical analysis of electrothermal coupling and the circuit reliability is not high enough in the prior art.

[0005] In a first aspect, an embodiment of the present invention provides an electrothermal coupling analysis method for a passive circuit, comprising:

[0006] Establishing an electromagnetic field simulation model and a thermal simulation model of the target circuit; wherein the electromagnetic field simulation model and the thermal simulation model are both mesh models;

[0007] The electromagnetic field simulation model is simulated to obtain energy loss parameters corresponding to each node in the electromagnetic field simulation model, and the energy loss parameters corresponding to each node in the thermal simulation model are updated according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model;

[0008] Determine a first circuit energy loss value of the target circuit according to energy loss parameters corresponding to each node in the electromagnetic field simulation model, and determine a second circuit energy loss value of the target circuit according to energy loss parameters corresponding to each node in the thermal simulation model;

[0009] determining whether a ratio of the energy loss of the first circuit to the energy loss of the second circuit is within a first preset range;

[0010] If yes, the current thermal simulation model is used as the first target thermal simulation model;

[0011] If not, the electromagnetic field simulation model and the thermal simulation model are re-meshed respectively, and the process jumps to the step of simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to each node in the electromagnetic field simulation model, and updating the energy loss parameters corresponding to each node in the thermal simulation model according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model;

[0012] A first target thermal simulation model is used to perform simulation analysis on the target circuit.

[0013] In a second aspect, an embodiment of the present invention provides an emulation terminal, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the computer program, the steps of the first aspect or any possible implementation method of the first aspect are implemented.

[0014] The embodiment of the present invention provides an electrothermal coupling analysis method for a passive circuit and a simulation terminal. The method comprises: establishing an electromagnetic field simulation model and a thermal simulation model of a target circuit; wherein both the electromagnetic field simulation model and the thermal simulation model are meshed models; simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to each node in the electromagnetic field simulation model, and updating the energy loss parameters corresponding to each node in the thermal simulation model according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model; determining a first circuit energy loss value of the target circuit according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model, and determining a second circuit energy loss value of the target circuit according to the energy loss parameters corresponding to each node in the thermal simulation model; determining whether a ratio of the first circuit energy loss to the second circuit energy loss is within a first preset range; if so, taking the current thermal simulation model as the first target thermal simulation model; if not, re-meshing the electromagnetic field simulation model and the thermal simulation model respectively, and jumping to the step of simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to each node in the electromagnetic field simulation model, and updating the energy loss parameters corresponding to each node in the thermal simulation model according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model to continue to execute; and using the first target thermal simulation model to simulate and analyze the target circuit. The embodiment of the present invention uses an electromagnetic field simulation model to simulate and obtain energy loss parameters, which are then transferred to a thermal simulation model for thermal simulation. Among them, the accuracy of energy loss parameter transfer plays a vital role in the accuracy of the simulation results of the thermal simulation model. The embodiment of the present invention fully considers the energy transfer accuracy between the electromagnetic field simulation model and the thermal simulation model, ensures the accuracy of parameter transfer between the two models, effectively improves the accuracy of the thermal simulation model, and can use the thermal simulation model to simulate and obtain accurate temperature simulation results, thereby effectively guiding users to optimize the heat dissipation and reliability of the target circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0016] Figure 1 It is a flow chart of an implementation of an electrothermal coupling analysis method for a passive circuit provided by an embodiment of the present invention;

[0017] Figure 2 is a schematic structural diagram of an electrothermal coupling analysis device for a passive circuit provided by an embodiment of the present invention;

[0018] Figure 3 It is a schematic diagram of a simulation terminal provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0019] In the following description, specific details such as specific system structures, technologies, etc. are provided for the purpose of illustration rather than limitation, so as to provide a thorough understanding of the embodiments of the present invention. However, it should be clear to those skilled in the art that the present invention may be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to prevent unnecessary details from obstructing the description of the present invention.

[0020] In order to make the purpose, technical solutions and advantages of the present invention more clear, specific embodiments will be described below in conjunction with the accompanying drawings.

[0021] See also Figure 1 , which shows a flow chart of the implementation of the electrothermal coupling analysis method for a passive circuit provided by an embodiment of the present invention, and is described in detail as follows:

[0022] S101: Establishing an electromagnetic field simulation model and a thermal simulation model of a target circuit; wherein the electromagnetic field simulation model and the thermal simulation model are both mesh models;

[0023] S102: simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to each node in the electromagnetic field simulation model, and updating energy loss parameters corresponding to each node in the thermal simulation model according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model;

[0024] S103: determining a first circuit energy loss value of the target circuit according to energy loss parameters corresponding to each node in the electromagnetic field simulation model, and determining a second circuit energy loss value of the target circuit according to energy loss parameters corresponding to each node in the thermal simulation model;

[0025] S104: Determine whether the ratio of the energy loss of the first circuit to the energy loss of the second circuit is within a first preset range;

[0026] S105: If yes, taking the current thermal simulation model as the first target thermal simulation model;

[0027] S106: If not, re-gridding the electromagnetic field simulation model and the thermal simulation model respectively, and jump to the step of simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to each node in the electromagnetic field simulation model, and updating the energy loss parameters corresponding to each node in the thermal simulation model according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model;

[0028] S107: Perform simulation analysis on the target circuit using the first target thermal simulation model.

[0029] In the embodiment of the present invention, the electromagnetic field simulation model is used to simulate the energy loss parameters corresponding to each node based on the finite element mesh node, and then the parameters are transferred to the thermal simulation model to improve the parameters of the thermal simulation model. Since the mesh division of the electromagnetic field simulation model and the thermal simulation model may be inconsistent, deviations may occur during the energy loss parameter transfer process, resulting in inaccurate simulation results of the thermal simulation model. Therefore, in the embodiment of the present invention, after each parameter transfer is completed, the energy loss value (first circuit energy loss value) obtained by the electromagnetic field simulation model and the energy loss value (first circuit energy loss value) obtained by the thermal simulation model are judged. If the two are basically consistent, that is, the ratio of the two is within the first preset range, it means that the parameter transfer accuracy between the two models meets the requirements, the mesh division is reasonable, the parameters are accurate, and the thermal simulation model is accurate. The thermal simulation model can be used to simulate and obtain accurate temperature simulation results, thereby effectively guiding heat dissipation and reliability optimization.

[0030] Since the circuit contains conductors and dielectrics, energy loss can be divided into conductor loss and dielectric loss. Conductor loss refers to the energy loss on the signal path and the return path; dielectric loss refers to the energy loss caused inside the insulating material due to the hysteresis effect of dielectric conductivity and dielectric polarization under the action of the electric field. Conductor loss is related to the surface loss density of the conductor line due to the "skin effect" of the metal; dielectric loss is related to the volume loss density of the dielectric substrate. Therefore, the energy loss parameters include: the surface loss density of the conductor line and the volume loss density of the dielectric substrate.

[0031] In a possible implementation manner, the first preset range may be 0.8 to 1.2.

[0032] That is, the energy loss value of the first circuit is substantially consistent with the energy loss value of the second circuit, indicating that the parameter transfer is accurate and the corresponding thermal simulation model is also more accurate.

[0033] In a possible implementation, before S107, the above analysis method may further include:

[0034] S108: Correcting the first target thermal simulation model to obtain a second target thermal simulation model;

[0035] S107 specifically includes: using the second target thermal simulation model to perform simulation analysis on the target circuit.

[0036] In a possible implementation, S108 may include:

[0037] S1081: Simulate the target circuit using a first target thermal simulation model to obtain a first temperature sequence of the target circuit, and record the maximum value in the first temperature sequence as a first temperature;

[0038] S1082: updating material parameters in the first target thermal simulation model according to the first temperature sequence to obtain a new first target thermal simulation model;

[0039] S1083: Simulate the target circuit using the new first target thermal simulation model to obtain a second temperature sequence of the target circuit, and record the maximum value in the second temperature sequence as the second temperature;

[0040] S1084: Determine whether the difference between the second temperature and the first temperature is within a second preset range;

[0041] S1085: If yes, use the new first target thermal simulation model as the second target thermal simulation model;

[0042] S1086: If not, the second temperature sequence is used as a new first temperature sequence, and the process jumps to the step of updating the material parameters in the first target thermal simulation model according to the first temperature sequence to obtain a new first target thermal simulation model and continues to execute.

[0043] When the thermal simulation model is established, the initial material parameters are set to the material parameter values ​​at the reference temperature. Since the temperature of the circuit will affect the material parameters of the circuit (for example, electrical conductivity and thermal conductivity), the material parameters of the thermal simulation model deviate from the actual ones. For example, the electrical conductivity of the gold material at room temperature is twice as much as that at 300°C, which seriously affects the accuracy of the thermal simulation model. Therefore, in the embodiment of the present invention, the thermal simulation model is continuously corrected according to the temperature sequence obtained by simulation, and the difference in the highest temperature obtained by the thermal simulation model before and after correction is compared. If the two highest temperature values ​​are almost the same, it means that the parameters of the thermal simulation model are reasonable. The material parameter setting of the thermal simulation model after considering the influence of temperature is more reasonable, and the accuracy is greatly improved.

[0044] Since the thermal simulation model includes multiple conductor line nodes and dielectric substrate nodes, the temperature of each conductor line node and the temperature of each dielectric substrate node form a first temperature sequence and a second temperature sequence. The arrangement order of the temperatures of each node is not limited, and each temperature value in the first temperature sequence corresponds to each temperature value in the second temperature sequence. For example, the first temperature sequence can be (T 11 , T 12 ,…T 1k …T 1K ,T 21 ,T 22 …T 2q …T 2Q ), where T 1k is the temperature value of the kth node of the conductor line in the first target thermal simulation model; k=1, ..., K, K is the total number of nodes of the conductor line in the first target thermal simulation model; T 2q is the temperature of the qth node of the dielectric substrate; q=1, ..., Q, where Q is the total number of nodes of the dielectric substrate in the first target thermal simulation model.

[0045] In a possible implementation manner, the material parameter may include: electrical conductivity.

[0046] The material parameters related to conductor loss include electrical conductivity, and the material parameters related to dielectric loss include thermal conductivity. For most passive circuits, the dielectric loss generated when the transmission line is overcurrent is very small compared to the conductor loss and can be almost ignored. Therefore, when considering the influence of temperature on the thermal simulation model, the embodiment of the present invention can only consider electrical conductivity, and the result is relatively accurate, but the calculation complexity is reduced.

[0047] In a possible implementation, the material parameters may include: electrical conductivity; S1082 may include:

[0048] According to the first temperature sequence, the conductivity in the first target thermal simulation model is updated in combination with the second formula;

[0049] The second formula can be:

[0050]

[0051] Among them, σ 1k is the updated conductivity of the kth node of the conductor line in the first target thermal simulation model, ρ ref is the resistivity at the reference temperature, α is the temperature coefficient of resistivity, T ref is the reference temperature, T 1k is the temperature value of the kth node of the conductor line in the first target thermal simulation model; k=1, ..., K, where K is the total number of nodes of the conductor line in the first target thermal simulation model.

[0052] Furthermore, the material parameters may also include: thermal conductivity.

[0053] Since the heat conduction mechanism and process of dielectric materials are very complex, it is difficult to give a quantitative analysis. The correspondence between the thermal conductivity and temperature of a specific material can be determined experimentally. For the known thermal conductivity-temperature correspondence curve, the thermal conductivity is updated according to the first temperature. For example, the correspondence between the thermal conductivity and temperature of a SiC substrate is roughly:

[0054] K SiC =390×(T 2q / 293) -1.49

[0055] Among them, K SiC is the thermal conductivity of SiC, T 2q is the temperature of the qth node of the dielectric substrate; q=1, ..., Q, where Q is the total number of nodes of the dielectric substrate in the first target thermal simulation model.

[0056] In a possible implementation manner, the second preset range may be -1° to 1°.

[0057] In the embodiment of the present invention, it is required that the maximum temperatures obtained by two simulations of the thermal simulation model before and after the update are substantially the same, and the second preset range is an error range, which can be set according to actual accuracy requirements.

[0058] In a possible implementation, the energy loss parameters include: the surface loss density of the conductor line and the volume loss density of the dielectric substrate; S103 may include:

[0059] S1031: Calculate a first circuit energy loss value of the target circuit according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model and in combination with the first formula;

[0060] The first formula can be:

[0061]

[0062] Among them, q 1i is the surface loss density of the ith node of the conductor line in the electromagnetic field simulation model, q 2j is the volume loss density of the jth node of the dielectric substrate in the electromagnetic field simulation model, N i is the number of the i-th node of the conductor line in the electromagnetic field simulation model, M j is the number of the jth node of the dielectric substrate in the electromagnetic field simulation model; i=1,…,n, j=1,…,m, n is the total number of nodes of the conductor lines in the electromagnetic field simulation model, and m is the total number of nodes of the dielectric substrate in the electromagnetic field simulation model.

[0063] The energy loss parameters include: the surface loss density of the conductor line and the volume loss density of the dielectric substrate. The dielectric loss value of each node and the conductor loss value of each node can be calculated according to the first formula and added together to obtain the total energy loss value, that is, the first circuit energy loss value.

[0064] The calculation method of the energy loss value of the second circuit is the same as above and will not be repeated here.

[0065] In a possible implementation, S102 may include:

[0066] S1021: According to the energy loss parameters corresponding to each node in the electromagnetic field simulation model, an interpolation method is used to obtain and update the energy loss parameters corresponding to each node in the thermal simulation model.

[0067] In the embodiment of the present invention, since the node division of the electromagnetic field simulation model and the thermal simulation model may be inconsistent, for example, the electromagnetic field simulation model has 30 nodes, and the thermal simulation model has 40 nodes. Therefore, the 30 groups of energy loss parameters corresponding to the electromagnetic field simulation model cannot directly correspond to the 40 nodes of the thermal simulation model. Therefore, in the embodiment of the present invention, the interpolation method is used to assign the 30 groups of energy loss parameters of the electromagnetic field simulation model to the 40 nodes of the thermal simulation model.

[0068] In a possible implementation, the thermal simulation model of the target circuit may include a packaging structure of the target circuit.

[0069] Since electromagnetic field simulation is not affected by packaging, while thermal simulation is affected by packaging, the thermal simulation model in the embodiment of the present invention takes into account the impact of the packaging structure on the circuit temperature, is closer to the circuit itself, and has more accurate simulation results.

[0070] Based on the above, the method provided by the embodiment of the present invention is used to perform electrothermal coupling simulation and actual testing on the passive circuit including the Π-type attenuator. The maximum temperature of the resistance part of the Π-type attenuator obtained by the above simulation method is 246.6°C, the result of the actual test is 263.9°C, and the simulation error is 6.56%. It can be seen that the simulation method provided by the implementation of the present invention has a small error and high simulation accuracy, which can provide strong support for the design of high-power microwave passive circuits.

[0071] It should be understood that the order of execution of the steps in the above embodiment does not necessarily mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present invention.

[0072] The following is an embodiment of the device of the present invention. For details not described in detail therein, reference may be made to the corresponding method embodiment described above.

[0073] Figure 2The structure diagram of the electrothermal coupling analysis device for passive circuits provided by an embodiment of the present invention is shown. For the convenience of description, only the parts related to the embodiment of the present invention are shown, which are described in detail as follows:

[0074] The electrothermal coupling analysis device of the passive circuit comprises:

[0075] A model building module 21 is used to build an electromagnetic field simulation model and a thermal simulation model of the target circuit; wherein the electromagnetic field simulation model and the thermal simulation model are both grid models;

[0076] The parameter transfer module 22 is used to simulate the electromagnetic field simulation model to obtain energy loss parameters corresponding to each node in the electromagnetic field simulation model, and update the energy loss parameters corresponding to each node in the thermal simulation model according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model;

[0077] The loss calculation module 23 determines a first circuit energy loss value of the target circuit according to energy loss parameters corresponding to each node in the electromagnetic field simulation model, and determines a second circuit energy loss value of the target circuit according to energy loss parameters corresponding to each node in the thermal simulation model;

[0078] a ratio calculation module 24, used to determine whether the ratio of the energy loss of the first circuit to the energy loss of the second circuit is within a first preset range;

[0079] A first judging module 25, configured to use the current thermal simulation model as a first target thermal simulation model if yes;

[0080] The second judgment module 26 is used for re-gridding the electromagnetic field simulation model and the thermal simulation model respectively if no, and jump to the step of simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to each node in the electromagnetic field simulation model, and updating the energy loss parameters corresponding to each node in the thermal simulation model according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model to continue to execute;

[0081] The simulation analysis module 27 is used to perform simulation analysis on the target circuit by using the first target thermal simulation model.

[0082] In a possible implementation manner, the above device may further include:

[0083] A model correction module 28, used to correct the first target thermal simulation model to obtain a second target thermal simulation model;

[0084] The simulation analysis module 27 may be specifically configured to: perform simulation analysis on the target circuit using the second target thermal simulation model.

[0085] In a possible implementation, the model modification module 28 may include:

[0086] A first temperature calculation unit 281 is used to simulate the target circuit using a first target thermal simulation model to obtain a first temperature sequence of the target circuit, and record the maximum value in the first temperature sequence as a first temperature;

[0087] A model updating unit 282, configured to update material parameters in the first target thermal simulation model according to the first temperature sequence to obtain a new first target thermal simulation model;

[0088] A second temperature calculation unit 283 is used to simulate the target circuit using the new first target thermal simulation model to obtain a second temperature sequence of the target circuit, and record the maximum value in the second temperature sequence as the second temperature;

[0089] A difference calculation unit 284, used to determine whether the difference between the second temperature and the first temperature is within a second preset range;

[0090] A first judging unit 285, configured to use the new first target thermal simulation model as the second target thermal simulation model if yes;

[0091] The second judgment unit 286 is used to, if not, take the second temperature sequence as a new first temperature sequence, and jump to the step of updating the material parameters in the first target thermal simulation model according to the first temperature sequence to obtain a new first target thermal simulation model and continue to execute.

[0092] In a possible implementation manner, the material parameter may include: electrical conductivity.

[0093] In a possible implementation manner, the second preset range may be -1° to 1°.

[0094] In a possible implementation, the energy loss parameters include: the surface loss density of the conductor line and the volume loss density of the dielectric substrate; the loss calculation module 23 may include:

[0095] A formula calculation unit 231 is used to calculate a first circuit energy loss value of a target circuit according to energy loss parameters corresponding to each node in the electromagnetic field simulation model in combination with a first formula;

[0096] The first formula can be:

[0097]

[0098] Among them, q 1i is the surface loss density of the ith node of the conductor line in the electromagnetic field simulation model, q 2j is the volume loss density of the jth node of the dielectric substrate in the electromagnetic field simulation model, N iis the number of the i-th node of the conductor line in the electromagnetic field simulation model, M j is the number of the jth node of the dielectric substrate in the electromagnetic field simulation model; i=1,…,n, j=1,…,m, n is the total number of nodes of the conductor lines in the electromagnetic field simulation model, and m is the total number of nodes of the dielectric substrate in the electromagnetic field simulation model.

[0099] In a possible implementation, the second determination module 26 may include:

[0100] The interpolation transfer unit 261 is used to obtain and update the energy loss parameters corresponding to each node in the thermal simulation model by using the interpolation method according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model.

[0101] In a possible implementation manner, the first preset range may be 0.8 to 1.2.

[0102] In a possible implementation, the thermal simulation model of the target circuit may include a packaging structure of the target circuit.

[0103] Figure 3 Schematic diagram of a simulation terminal provided by an embodiment of the present invention. Figure 3 As shown, the simulation terminal 5 of this embodiment includes: a processor 50 and a memory 51. The memory 51 is used to store a computer program 52, and the processor 50 is used to call and run the computer program 52 stored in the memory 51 to execute the steps in the above-mentioned embodiments of the electrothermal coupling analysis method for each passive circuit, for example Figure 1 Alternatively, the processor 50 is used to call and run the computer program 52 stored in the memory 51 to implement the functions of each module / unit in the above-mentioned device embodiments, such as Figure 2 The functions of modules 21 to 27 are shown.

[0104] Exemplarily, the computer program 52 may be divided into one or more modules / units, one or more modules / units are stored in the memory 51 and executed by the processor 50 to implement the present invention. One or more modules / units may be a series of computer program instruction segments that can implement specific functions, and the instruction segments are used to describe the execution process of the computer program 52 in the simulation terminal 5. For example, the computer program 52 may be divided into Figure 2 Modules / units 21 to 27 are shown.

[0105] The simulation terminal 5 may be a computing device such as a desktop computer, a notebook, a PDA, or a cloud server. The simulation terminal 5 may include, but is not limited to, a processor 50 and a memory 51. Those skilled in the art will appreciate that Figure 3It is only an example of the simulation terminal 5 and does not constitute a limitation on the simulation terminal 5. It may include more or fewer components than shown in the figure, or a combination of certain components, or different components. For example, the terminal may also include input and output devices, network access devices, buses, etc.

[0106] The processor 50 may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or any conventional processor, etc.

[0107] The memory 51 may be an internal storage unit of the simulation terminal 5, such as a hard disk or memory of the simulation terminal 5. The memory 51 may also be an external storage device of the simulation terminal 5, such as a plug-in hard disk, a smart media card (SMC), a secure digital (SD) card, a flash card, etc. equipped on the simulation terminal 5. Further, the memory 51 may also include both an internal storage unit of the simulation terminal 5 and an external storage device. The memory 51 is used to store computer programs and other programs and data required by the terminal. The memory 51 may also be used to temporarily store data that has been output or is to be output.

[0108] The technicians in the relevant field can clearly understand that for the convenience and simplicity of description, only the division of the above-mentioned functional units and modules is used as an example for illustration. In practical applications, the above-mentioned function allocation can be completed by different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiment can be integrated in a processing unit, or each unit can exist physically separately, or two or more units can be integrated in one unit. The above-mentioned integrated unit can be implemented in the form of hardware or in the form of software functional units. In addition, the specific names of the functional units and modules are only for the convenience of distinguishing each other, and are not used to limit the scope of protection of this application. The specific working process of the units and modules in the above-mentioned system can refer to the corresponding process in the aforementioned method embodiment, which will not be repeated here.

[0109] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described or recorded in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0110] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.

[0111] In the embodiments provided by the present invention, it should be understood that the disclosed devices / terminals and methods can be implemented in other ways. For example, the device / terminal embodiments described above are only schematic, for example, the division of modules or units is only a logical function division, and there may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0112] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0113] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.

[0114] If the integrated module / unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the present invention implements all or part of the processes in the above-mentioned embodiment method, and can also be completed by instructing the relevant hardware through a computer program. The computer program can be stored in a computer-readable storage medium, and the computer program can implement the steps of the above-mentioned various method embodiments when executed by the processor. Among them, the computer program includes computer program code, and the computer program code can be in source code form, object code form, executable file or some intermediate form. Computer-readable media may include: any entity or device capable of carrying computer program code, recording medium, U disk, mobile hard disk, disk, optical disk, computer memory, read-only memory (ROM), random access memory (RAM), electrical carrier signal, telecommunication signal and software distribution medium, etc.

[0115] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention, and should be included in the protection scope of the present invention.

Claims

1. A method for electrothermal coupling analysis of a passive circuit, characterized in that: include: Establishing an electromagnetic field simulation model and a thermal simulation model of the target circuit; wherein the electromagnetic field simulation model and the thermal simulation model are both grid models; Simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to each node in the electromagnetic field simulation model, and updating energy loss parameters corresponding to each node in the thermal simulation model according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model; Determine a first circuit energy loss value of the target circuit according to energy loss parameters corresponding to each node in the electromagnetic field simulation model, and determine a second circuit energy loss value of the target circuit according to energy loss parameters corresponding to each node in the thermal simulation model; determining whether a ratio of the energy loss of the first circuit to the energy loss of the second circuit is within a first preset range; If yes, the current thermal simulation model is used as the first target thermal simulation model; If not, the electromagnetic field simulation model and the thermal simulation model are re-meshed respectively, and the step of simulating the electromagnetic field simulation model to obtain energy loss parameters corresponding to each node in the electromagnetic field simulation model, and updating the energy loss parameters corresponding to each node in the thermal simulation model according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model is continued; The first target thermal simulation model is used to perform simulation analysis on the target circuit.

2. The electrothermal coupling analysis method of a passive circuit according to claim 1, characterized in that: Before the first target thermal simulation model is used to perform simulation analysis on the target circuit, the analysis method further includes: Correcting the first target thermal simulation model to obtain a second target thermal simulation model; The using the first target thermal simulation model to perform simulation analysis on the target circuit includes: The target circuit is simulated and analyzed using the second target thermal simulation model.

3. The electrothermal coupling analysis method of a passive circuit according to claim 2, characterized in that: The step of correcting the first target thermal simulation model to obtain a second target thermal simulation model includes: Simulating the target circuit using the first target thermal simulation model to obtain a first temperature sequence of the target circuit, and recording a maximum value in the first temperature sequence as a first temperature; Update material parameters in the first target thermal simulation model according to the first temperature sequence to obtain a new first target thermal simulation model; Simulating the target circuit using the new first target thermal simulation model to obtain a second temperature sequence of the target circuit, and recording a maximum value in the second temperature sequence as a second temperature; determining whether a difference between the second temperature and the first temperature is within a second preset range; If yes, taking the new first target thermal simulation model as the second target thermal simulation model; If not, the second temperature sequence is used as a new first temperature sequence, and the process jumps to the step of updating the material parameters in the first target thermal simulation model according to the first temperature sequence to obtain a new first target thermal simulation model and continues to execute.

4. The electrothermal coupling analysis method of a passive circuit according to claim 3, characterized in that: The material parameters include: electrical conductivity.

5. The electrothermal coupling analysis method of a passive circuit according to claim 3, characterized in that: The second preset range is -1° to 1°.

6. The electrothermal coupling analysis method of a passive circuit according to claim 1, characterized in that: The energy loss parameters include: surface loss density of conductor lines and volume loss density of dielectric substrates; determining the first circuit energy loss value of the target circuit according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model includes: According to the energy loss parameters corresponding to each node in the electromagnetic field simulation model, combined with the first formula, a first circuit energy loss value of the target circuit is calculated; The first formula is: Among them, q 1i is the surface loss density of the ith node of the conductor line in the electromagnetic field simulation model, q 2j is the volume loss density of the jth node of the dielectric substrate in the electromagnetic field simulation model, N i is the number of the ith node of the conductor line in the electromagnetic field simulation model, M j is the number of the jth node of the dielectric substrate in the electromagnetic field simulation model; i=1, ..., n, j=1, ..., m, n is the total number of nodes of the conductor lines in the electromagnetic field simulation model, and m is the total number of nodes of the dielectric substrate in the electromagnetic field simulation model.

7. The electrothermal coupling analysis method for a passive circuit according to any one of claims 1 to 6, characterized in that: The updating of the energy loss parameters corresponding to each node in the thermal simulation model according to the energy loss parameters corresponding to each node in the electromagnetic field simulation model includes: According to the energy loss parameters corresponding to each node in the electromagnetic field simulation model, an interpolation method is used to obtain and update the energy loss parameters corresponding to each node in the thermal simulation model.

8. The electrothermal coupling analysis method for a passive circuit according to any one of claims 1 to 6, characterized in that: The first preset range is 0.8 to 1.

2.

9. The electrothermal coupling analysis method for a passive circuit according to any one of claims 1 to 6, characterized in that: The thermal simulation model of the target circuit includes a packaging structure of the target circuit.

10. An emulation terminal, characterized in that: The invention comprises a processor and a memory, wherein the memory is used to store a computer program, and the processor is used to call and run the computer program stored in the memory to execute the electrothermal coupling analysis method for a passive circuit as claimed in any one of claims 1 to 9.

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