A plasma processing device

Abstract

The present invention discloses a plasma processing device, comprising: a vacuum reaction chamber, a lower electrode assembly is provided in the vacuum reaction chamber, an exhaust port is provided in the vacuum reaction chamber body to discharge the gas inside the vacuum reaction chamber; a plasma confinement device is arranged around the outer side of the lower electrode assembly; an airflow balancing component is arranged between the plasma confinement device and the exhaust port, and the airflow balancing component comprises a plurality of staggered partitions, and a non-linear air path is formed between the staggered partitions, which is used to extend the distance from the gas in the vacuum reaction chamber to the exhaust port through the plasma confinement device. The advantage is that the device combines the plasma confinement device, the airflow balancing component, etc., increases the gas travel path through the airflow balancing component, slows down the gas flow rate between the plasma confinement device and the exhaust port, helps to regulate the wafer etching effect, and further avoids contamination of the wafer surface.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor equipment, and in particular to a plasma processing device. Background Art

[0002] During semiconductor wafer processing, plasma gas is often used to etch the wafer or the film deposited on the wafer. Throughout the wafer processing process, factors such as the uniformity of the plasma environment within the plasma processing device and the cleanliness of the vacuum reaction chamber have a significant impact on the etching effect of the wafer. During the process, reaction byproducts generated by the wafer may also remain in the vacuum reaction chamber. Typically, industry insiders use a gas extraction device (such as a vacuum pump) connected to the vacuum reaction chamber to promptly discharge the reaction byproducts from the vacuum reaction chamber through an exhaust port.

[0003] In a plasma processing device, since the entire system structure including the processing device needs to be considered reasonable, the exhaust port of the vacuum reaction chamber is usually not directly below the vacuum reaction chamber, but is biased to one side of the chamber. For example, for a dual-chamber system, a common exhaust system is used, and the waste products generated during the process are exhausted to the outside of the vacuum reaction chamber through a gas extraction device. In this process, since the exhaust port is biased to one side of the chamber, the exhaust efficiency will be higher on the side close to the exhaust port, and the residence time of the reaction gas at different positions on the edge of the wafer will be different, resulting in the wafer etching rate being biased, which can easily cause uneven wafer etching. In particular, in a process where a large amount of polymer is produced, the biased etching rate will become more obvious. The polymer on the side close to the exhaust port is extracted faster, while the polymer accumulation on the side away from the exhaust port blocks the reaction between the reaction gas and the wafer, so the etching rate close to the exhaust port will be higher than the etching rate on the side away from the exhaust port, and the wafer etching effect cannot be guaranteed. Summary of the Invention

[0004] The object of the present invention is to provide a plasma processing device, which extends the distance from the gas in the vacuum reaction chamber to the exhaust port through the plasma confinement device by arranging an airflow balancing component between the plasma confinement device and the exhaust port, increases the gas travel path, and makes the reaction area far away from the gas extraction device, thereby weakening the influence of the gas extraction device on the reaction area, so as to regulate the wafer etching effect; on the other hand, the airflow balancing component also further prevents tiny particle pollutants from the gas extraction device or other sources from flowing back to the reaction area, thereby avoiding contamination of the wafer surface.

[0005] In order to achieve the above object, the present invention is implemented through the following technical solutions:

[0006] A plasma processing device comprising:

[0007] A vacuum reaction chamber, wherein the vacuum reaction chamber has a lower electrode assembly, and the vacuum reaction chamber body is provided with an exhaust port for exhausting the gas inside the vacuum reaction chamber;

[0008] a plasma confinement device, which is disposed around the outer side of the lower electrode assembly;

[0009] An airflow balancing component is arranged between the plasma confinement device and the exhaust port. The airflow balancing component includes a plurality of staggered partitions, and a non-linear air path is formed between the staggered partitions to extend the distance from the gas in the vacuum reaction chamber to the exhaust port through the plasma confinement device.

[0010] Optionally, the airflow balancing component includes:

[0011] An inner wall is arranged around the outer side of the lower electrode assembly;

[0012] An outer wall is arranged around the outer side of the inner wall, and the outer wall is connected to the inner wall;

[0013] Each of the partitions is disposed between the inner wall and the outer wall, and the partition is a first partition or a second partition, the first partition is connected to the inner wall, the second partition is connected to the outer wall, and the first partition and the second partition are staggered;

[0014] The inner wall and / or the outer wall and / or the first partition and / or the second partition are provided with air flow holes for gas circulation.

[0015] Optionally, the bottom of the outer wall is connected to the bottom of the inner wall via a bottom plate;

[0016] Alternatively, the outer wall and the inner wall are connected via a plurality of connecting rods.

[0017] Optionally, the airflow balancing component further comprises:

[0018] A plurality of supporting legs are arranged at the bottom of the airflow balancing component to support the airflow balancing component.

[0019] Optionally, the airflow balancing component includes a first area and a second area, and the distance from the first area to the exhaust port is smaller than the distance from the second area to the exhaust port.

[0020] Optionally, the gas flow rate in the first area is lower than the gas flow rate in the second area.

[0021] Optionally, the interleaving and overlapping range of the partitions in the first area is larger than the interleaving and overlapping range of the partitions in the second area, so that the air path channels formed between the partitions in the first area are larger than the air path channels in the second area.

[0022] Optionally, the number of partitions located in the first area is greater than the number of partitions located in the second area, and air flow holes are provided on the partitions to facilitate gas circulation.

[0023] Optionally, the edge of the partition located in the first area is in an upwardly inclined state or a horizontal state, and the edge of the partition located in the second area is in a horizontal state or a downwardly inclined state.

[0024] Optionally, the airflow balancing component is provided with a plurality of airflow holes, and the number of airflow holes in the first area is smaller than the number of airflow holes in the second area.

[0025] Optionally, the circumferential range of the second area is greater than or equal to the circumferential range of the first area.

[0026] Optionally, the circumferential range of the first area is 30° to 120°.

[0027] Optionally, the partitions are arranged parallel to each other;

[0028] And / or, the partition parts are arranged in parallel.

[0029] Optionally, the material of the airflow balancing component includes aluminum alloy, engineering plastic, or stainless steel;

[0030] And / or, the surface of the airflow balancing component is provided with a corrosion-resistant material coating.

[0031] Optionally, the corrosion-resistant material coating is a Teflon coating, an yttrium oxide film, or an anodized layer.

[0032] Compared with the prior art, the present invention has the following advantages:

[0033] The present invention provides a plasma processing device that combines structures such as a plasma confinement device, an exhaust port, and an airflow balancing component. The airflow balancing component is arranged between the plasma confinement device and the exhaust port. The airflow balancing component includes a plurality of staggered partitions. A non-linear air path is formed between the staggered partitions to extend the distance from the gas in the vacuum reaction chamber to the exhaust port through the plasma confinement device, thereby compensating for the gas pressure deviation problem in the circumference of the reaction area, so as to regulate the wafer etching effect. On the other hand, the airflow balancing component further prevents tiny particle contaminants from the gas extraction device or other sources from flowing back into the reaction area, thereby avoiding contamination of the wafer surface.

[0034] Furthermore, the airflow balancing component includes a first area and a second area, the distance from the first area to the exhaust port is smaller than the distance from the second area to the exhaust port, and the gas flow rate in the first area is smaller than the gas flow rate in the second area, which slows down the gas flow rate at the exhaust port, alleviates the asymmetric effect of the gas extraction device on the reaction area and the chamber environment, balances the etching rate of each phase angle of the wafer, and further effectively solves the problem of wafer edge deviation; the flow rate of the gas flowing out of the first area of ​​the airflow balancing component is close to the flow rate of the gas flowing out of the second area, so that the gas flow rate of the plasma confinement device in the circumferential direction tends to be stable, and the gas flow rate in the circumferential direction of the reaction area between the upper electrode assembly and the lower electrode assembly tends to be the same, which helps to ensure the uniformity of wafer etching, does not cause wafer etching edge deviation, ensures the etching effect of the wafer, and obtains the optimal process symmetry effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 A plasma processing device of the present invention;

[0036] Figure 2 A partial schematic diagram of an airflow balancing component of the present invention;

[0037] Figure 3 It is a partial schematic diagram of another airflow balancing component of the present invention. DETAILED DESCRIPTION

[0038] To facilitate understanding of the features, contents, advantages, and effects that can be achieved by the present invention, the present invention is described in detail below in conjunction with the accompanying drawings and in the form of embodiments. The drawings used therein are for illustration and auxiliary description purposes only and may not represent the actual proportions and precise configurations after the implementation of the present invention. Therefore, the proportions and configuration relationships of the attached drawings should not be interpreted to limit the scope of rights of the present invention in actual implementation.

[0039] It should be noted that the drawings are all in very simplified form and use non-precise ratios, and are only used to conveniently and clearly assist in illustrating the embodiments of the present invention.

[0040] like Figure 1FIG. 1 shows a plasma processing apparatus according to the present invention, optionally a capacitively coupled plasma processing apparatus, comprising: a vacuum reaction chamber 100, which is surrounded by a reaction chamber body 101 and a chamber end cover 102; a wafer transfer port 103 is provided on the reaction chamber body 101, and the wafer transfer port 103 is used to transfer wafers W between the inside and outside of the vacuum reaction chamber 100; a lower electrode assembly 110 is provided within the vacuum reaction chamber 100, which is disposed at the bottom of the vacuum reaction chamber 100; the lower electrode assembly 110 is provided with a carrying surface, and the wafer W to be processed, which is introduced into the vacuum reaction chamber 100, is placed on the carrying surface. The vacuum reaction chamber 100 further includes an upper electrode assembly 120 disposed opposite to the lower electrode assembly 110. At least one radio frequency power source (not shown in the figure) is applied to the lower electrode assembly 110 through a matching network to dissociate the process gas into plasma, thereby creating a plasma environment between the upper electrode assembly 120 and the lower electrode assembly 110. The plasma environment contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals. The above-mentioned active particles can undergo various physical and / or chemical reactions with the surface of the wafer W to be processed, causing the morphology of the wafer W to be processed to change, thereby completing the processing of the wafer W to be processed.

[0041] Furthermore, the vacuum reaction chamber 100 is provided with an exhaust port 104. In this embodiment, the exhaust port 104 is disposed at the bottom of the vacuum reaction chamber 100, i.e., the bottom of the reaction chamber body 101. A gas extraction device 130 exhausts the gas, i.e., the reaction waste products, from the interior of the vacuum reaction chamber 100 through the exhaust port 104. Optionally, the gas extraction device 130 may be a molecular pump or a dry pump. Of course, the structure of the gas extraction device 130 is not limited to this; it may also be any other device capable of achieving the same gas extraction function.

[0042] like Figure 1 As shown, the plasma processing apparatus further includes a plasma confinement device 140, which is disposed around the outer side of the lower electrode assembly 110. The plasma confinement device 140 confines the plasma to the reaction region between the upper electrode assembly 120 and the lower electrode assembly 110 to prevent plasma leakage into non-reaction regions and damage to components in these regions. Optionally, the plasma confinement device 140 is provided with a plurality of circumferential slots to facilitate gas flow.

[0043] Further, such as Figure 1As shown, the plasma processing apparatus further includes a gas flow equalization assembly 150, which is disposed below the plasma confinement device 140. Specifically, the gas flow equalization assembly 150 includes a plurality of staggered baffles, which form a non-linear gas path between the staggered baffles, thereby extending the distance that the gas within the vacuum reaction chamber 100 travels from the plasma confinement device 140 to the exhaust port 104. Gas within the reaction region between the upper electrode assembly 120 and the lower electrode assembly 110 flows through the circumferential slots of the plasma confinement device 140 to the bottom of the vacuum reaction chamber 100. The gas flow equalization assembly 150, located between the plasma confinement device 140 and the exhaust port 104, acts as a flow blocker. This position of the gas flow equalization assembly 150 positions the reaction region distally from the gas extraction device 130, thereby reducing the effect of the gas extraction device 130 on the gas pressure within the reaction region. Furthermore, the airflow balancing assembly 150 is disposed between the plasma confinement device 140 and the exhaust port 104 , providing increased shielding between the exhaust port 104 and the wafer W. This prevents small particles discharged from the gas extraction device 130 or during the process from flowing back through the exhaust port 104 onto the wafer W and contaminating the wafer W. Furthermore, particles such as polymer particles generated during the process are susceptible to adhering to the airflow balancing assembly 150 . Therefore, the airflow balancing assembly 150 is easily disassembled and cleaned, thereby helping to maintain the environment within the vacuum reaction chamber 100 .

[0044] In this embodiment, the gas flow balancing assembly 150 can be divided into a first region A and a second region B. The distance from the first region A to the exhaust port 104 is shorter than the distance from the second region B to the exhaust port 104, i.e., the first region A is closer to the exhaust port 104, while the second region B is farther away from the exhaust port 104. Both the first region A and the second region B contain a plurality of staggered baffles to alter the path of gas in the reaction region. Gas does not flow directly from the plasma confinement device 140 to the exhaust port 104, but instead flows through the first region A and the second region B of the gas flow balancing assembly 150 to the exhaust port 104, extending the exhaust path. Even if the gas flow rates in the first region A and the second region B are consistent, the gas flow balancing assembly 150 will compensate for the gas pressure within the reaction region, further resolving the problem of uneven gas pressure in the reaction region and ensuring the etching effect on the wafer W.

[0045] Specifically, the airflow balancing assembly 150 includes an inner wall 151 and an outer wall 152. The inner wall 151 surrounds the outer side of the lower electrode assembly 110, and the outer wall 152 surrounds the outer side of the inner wall 151. The outer wall 152 is connected to the inner wall 151. The airflow balancing assembly 150 is provided with a plurality of airflow holes for gas circulation. Each partition is disposed between the inner wall 151 and the outer wall 152. The partition is a first partition 154 or a second partition 155. The first partition 154 is connected to the inner wall 151, and the second partition 155 is connected to the outer wall 152. Optionally, the first partition 154 and the second partition 155 can be connected to the inner wall 151 and the outer wall 152 interchangeably.

[0046] Optionally, the bottom of the outer wall 152 is connected to the bottom of the inner wall 151 via a bottom plate 153. Depending on actual application requirements, air flow holes may be provided on the bottom plate 153 to allow gas to flow from the bottom of the air flow equalizing assembly 150 to the exhaust port 104 located at the bottom of the vacuum reaction chamber 100. It should be noted that the location of the air flow holes of the air flow equalizing assembly 150 is not limited to the bottom plate 153. Depending on the location of the exhaust port 104, process requirements, or installation and distribution requirements within the vacuum reaction chamber 100, air flow holes may also be provided on the inner wall 151 and / or the outer wall 152 and / or the first partition plate 154 and / or the second partition plate 155 of the air flow equalizing assembly 150 to facilitate gas circulation. It should be further explained that the inner wall 151 and the outer wall 152 are not limited to being connected through the bottom plate 153, but can also be connected in any other way that can connect the inner wall 151 and the outer wall 152, such as using several connecting rods to connect the inner wall 151 and the outer wall 152 for gas circulation.

[0047] In this embodiment, the first baffles 154 and the second baffles 155 are staggered to form a non-linear gas path, thereby increasing the gas path. Of course, the arrangement of the first baffles 154 and the second baffles 155 is not limited to "from top to bottom: first baffle 154, second baffle 155, first baffle 154, second baffle 155..." and can also be any other arrangement that can adjust the gas path, such as "from top to bottom: first baffle 154, second baffle 155, second baffle 155, first baffle 154..." (the second baffles 155 are of varying lengths).

[0048] Furthermore, the air flow velocity within the first region A is lower than the air flow velocity within the second region B. That is, the air flow velocity on the side of the airflow balancing component 150 near the exhaust port 104 is lower than the air flow velocity on the side away from the exhaust port 104, thereby achieving airflow balancing. Optionally, the circumferential range of the second region B is greater than or equal to the circumferential range of the first region A. For example, the circumferential range of the first region A is 30° to 120°.

[0049] Optionally, the first partition 154 and the second partition 155 in the first area A and the second area B are arranged parallel to each other, and the staggered overlapping range of the first partition 154 and the second partition 155 in the first area A is larger than the staggered overlapping range of the first partition 154 and the second partition 155 in the second area B, so that the gas path channel formed between the partitions in the first area A is longer than the gas path channel in the second area B, so as to balance the circumferential gas flow rate of the plasma confinement device 140, further ensure the balance of the airflow in the reaction area, ensure the etching effect of the wafer W, avoid the edge deviation phenomenon, and thus ensure the etching effect of the wafer W.

[0050] In another embodiment, the number of air flow holes in the first region A is smaller than the number of air flow holes in the second region B, so as to reduce the gas passage diameter, reduce the gas flow rate in the first region A, balance the gas pressure in the reaction area, make the etching rates of each phase angle tend to be consistent, and ensure the etching effect of wafer W.

[0051] According to the position of the exhaust port 104, the process requirements or the installation distribution requirements inside the vacuum reaction chamber 100, air flow holes can be opened on the inner wall 151 and / or the outer wall 152 and / or the first partition 154 and / or the second partition 155 and / or the bottom plate 153 of the air flow balancing component 150 for gas circulation. When the first partition 154 or the second partition 155 is provided with air flow holes, the number of air flow holes of each partition in the first area A is less than the number of air flow holes of each partition in the second area B. Optionally, the opening positions of the air flow holes of each partition in the first area A can be staggered to increase the walking path of the gas in the first area A and balance the gas flow rate in the circumferential direction of the reaction area. When the bottom plate 153 is provided with air flow holes, the opening position and number of the air flow holes on the bottom plate 153 can be adjusted according to the position of the exhaust port 104 to achieve the effect of balancing the gas flow rate of the air flow balancing component 150.

[0052] Optionally, the edge of the partition located in the first area A is in an upward tilted or horizontal state, and the edge of the partition located in the second area B is in a horizontal state or a downward tilted state, so that the airflow blocking effect in the first area A is better than that in the second area B, which helps to achieve circumferential airflow balance around the wafer W and maintain a balanced gas environment. Figure 2Figure 2 shows a schematic diagram of the arrangement of baffles within the airflow balancing assembly 150 in one embodiment (taking the first baffle 154 as an example). The baffle edges in the first region A are tilted upward, while the baffle edges in the second region B are tilted downward. Gas flows into the airflow balancing assembly 150 from above. The baffles with upward edges in the first region A further slow down the gas flow rate, while the baffles with downward edges in the second region B further promote gas circulation, resulting in a lower gas flow rate in the first region A than in the second region B.

[0053] As can be seen from the above, gas in the reaction area flows toward the exhaust port 104 through the first region A and second region B of the gas flow balancing assembly 150. Because the second region B of the gas flow balancing assembly 150 is located farther from the exhaust port 104, and the gas flow rate within the first region A is lower than the gas flow rate within the second region B, the gas path within the first region A is extended, helping to reduce the gas flow rate near the exhaust port 104. This alleviates the asymmetric effect of the gas extraction device 130 on the reaction area and the chamber environment, effectively resolving the problem of wafer W edge deviation. The flow rate of gas flowing out of the first region A of the gas flow balancing assembly 150 approaches the flow rate of gas flowing out of the second region B, making the circumferential gas flow rate of the plasma confinement device 140 nearly stable. The circumferential gas flow rate of the reaction area between the upper electrode assembly 120 and the lower electrode assembly 110 becomes nearly the same, which promotes uniform etching of the wafer W, prevents edge deviation of the wafer W, and ensures the etching effect of the wafer W, thereby achieving optimal process symmetry.

[0054] Of course, the shape and structure of the gas flow balancing assembly 150 are not limited to the above-described structure. It may also be other structures capable of blocking gas flow. Its specific structure may be modified based on the placement requirements of other components within the vacuum reaction chamber 100 or other factors. For example, the gas flow balancing assembly 150 further includes a top plate having gas flow holes. The gas flow exiting the plasma confinement device 140 flows through the top plate into the space between the inner wall 151 and the outer wall 152. The number of gas flow holes in the first region A of the top plate is smaller than the number of gas flow holes in the second region B. This reduces the gas flow rate within the first region A, helps balance the gas flow rate around the wafer W, and improves the etching uniformity of the wafer W.

[0055] Furthermore, the airflow balancing assembly 150 includes a plurality of support legs 156 disposed at the bottom of the base plate 153 to support the base plate 153. The position of the support legs 156 can be adjusted according to the placement of other components within the chamber, increasing the flexibility of the internal layout of the vacuum reaction chamber 100 and fully utilizing the internal space within the vacuum reaction chamber 100. The components within the vacuum reaction chamber 100 are complex and diverse. The support legs 156 support the combined portion of the inner wall 151 and the outer wall 152, allowing the area below them to be arranged with other components according to process requirements, thereby further enhancing process conditions.

[0056] Of course, the airflow balancing assembly 150 may also not be provided with the support legs 156, that is, the gas in the reaction area flows to the airflow balancing assembly 150 through the plasma confinement device 140, and the gas flows from the bottom of the airflow balancing assembly 150 through the gaps between the various components in the vacuum reaction chamber 100 to the exhaust port 104, and then is discharged from the vacuum reaction chamber 100.

[0057] Optionally, the airflow balancing assembly 150 may be made of aluminum alloy, engineering plastic, or stainless steel to avoid particulate contamination during the process. Furthermore, the surface of the airflow balancing assembly 150 is coated with a corrosion-resistant material to prevent corrosion from the transported gas or plasma, thereby extending the service life of the airflow balancing assembly 150 and reducing waste of material resources. Optionally, the corrosion-resistant coating is a Teflon coating, an yttrium oxide film, or an anodized layer.

[0058] Example 2

[0059] Based on the structural characteristics of the plasma processing apparatus of the first embodiment, this embodiment mainly makes some changes to the structure of the airflow balancing component.

[0060] like Figure 3 FIG2 is a schematic diagram of the internal structure of a gas flow balancing assembly 250 of a plasma processing apparatus according to this embodiment. Compared to the first embodiment, the gas flow balancing assembly 250 according to this embodiment has a greater number of baffles located in the first region A than in the second region B. The baffles are partially arranged in parallel, and partially arranged in a gradual manner to achieve a change in the number of baffles.

[0061] Furthermore, each partition in the first area A is provided with an air flow hole 255 for gas circulation, and the opening positions of each air flow hole 255 can be staggered so that the gas flow rate in the first area A is smaller than the gas flow rate in the second area B, slowing down the gas flow rate at the exhaust port, and making the exhaust rate in all directions around the wafer W uniform, which helps to improve the uniformity of the etching rate of the wafer W, ensure the etching effect of the wafer W, and obtain the optimal process symmetry effect.

[0062] like Figure 3 As shown, in this embodiment, the number of partitions in the first region A is twice the number of partitions in the second region B ( Figure 3 Taking the first baffle 254 as an example, the alternating arrangement of the gas holes 255 of the first baffle 254 in the first region A can further increase the gas flow path and reduce the gas flow rate, so that the gas flow rate in the first region A is lower than the gas flow rate in the second region B. This ensures balanced gas pressure within the reaction area and helps improve the uniformity of the etching rate of the wafer W.

[0063] In addition, other structures and functions of various components of this embodiment, such as the upper electrode assembly and the lower electrode assembly, are the same as those in the first embodiment and will not be described in detail here.

[0064] In summary, the present invention provides a plasma processing device, which combines structures such as a plasma confinement device 140, an exhaust port 104 and an airflow balancing component 150. The airflow balancing component 150 is arranged between the plasma confinement device 140 and the exhaust port 104. The airflow balancing component 150 includes a plurality of staggered partitions, and a non-linear air path is formed between the staggered partitions to extend the distance from the gas in the vacuum reaction chamber 100 to the exhaust port 104 through the plasma confinement device 140. On the other hand, the airflow balancing component 150 further prevents tiny particle contaminants from the gas extraction device 130 or other sources from flowing back into the reaction area, thereby avoiding contamination of the surface of the wafer W.

[0065] Furthermore, the airflow balancing component 150 includes a first area A and a second area B, and the distance from the first area A to the exhaust port 104 is smaller than the distance from the second area B to the exhaust port 104. The gas flow rate in the first area A is smaller than the gas flow rate in the second area B, which slows down the gas flow rate at the exhaust port 104, alleviates the asymmetric effect of the gas extraction device 130 on the reaction area and the chamber environment, and effectively solves the problem of wafer W edge deviation; the flow rate of the gas flowing out of the first area A of the airflow balancing component 150 approaches the flow rate of the gas flowing out of the second area B, so that the gas flow rate in the circumferential direction of the plasma confinement device 140 tends to be stable, and the gas flow rate in the circumferential direction of the reaction area between the upper electrode assembly 120 and the lower electrode assembly 110 tends to be the same, which helps to ensure the uniformity of wafer W etching, does not cause wafer W etching edge deviation, ensures the etching effect of wafer W, and obtains the optimal process symmetry effect.

[0066] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description is not intended to limit the present invention. After reading the above description, various modifications and substitutions of the present invention will become apparent to those skilled in the art. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A plasma processing device, characterized in that: Include: A vacuum reaction chamber, wherein the vacuum reaction chamber has a lower electrode assembly, and the vacuum reaction chamber body is provided with an exhaust port to exhaust the gas inside the vacuum reaction chamber; A plasma confinement device, which is disposed around the outer side of the lower electrode assembly; An airflow balancing component is arranged between the plasma confinement device and the exhaust port, wherein the airflow balancing component comprises a plurality of staggered partitions, wherein a non-linear air path is formed between the staggered partitions, and is used to extend the distance from the gas in the vacuum reaction chamber to the exhaust port through the plasma confinement device; The airflow balancing component includes a first area and a second area, the distance from the first area to the exhaust port is smaller than the distance from the second area to the exhaust port; the gas flow rate in the first area is smaller than the gas flow rate in the second area; The number of partitions located in the first area is greater than the number of partitions located in the second area, and the partitions are partially arranged in parallel, and partially arranged in a gradual trend to achieve the conversion of the number of partitions; The partition is provided with air holes for gas circulation, and the air holes on the partition located in the first area are arranged alternately, and the number of air holes in the first area is less than the number of air holes in the second area.

2. The plasma processing device according to claim 1, characterized in that: The airflow balancing component comprises: An inner wall, arranged around the outer side of the lower electrode assembly; An outer wall is disposed around the outer side of the inner wall, and the outer wall is connected to the inner wall; Each of the partitions is disposed between the inner wall and the outer wall, the partition is a first partition or a second partition, the first partition is connected to the inner wall, the second partition is connected to the outer wall, and the first partition and the second partition are arranged alternately; The inner wall and / or the outer wall are provided with air flow holes for gas circulation.

3. The plasma processing device according to claim 2, characterized in that: The bottom of the outer wall is connected to the bottom of the inner wall via a bottom plate; Alternatively, the outer wall and the inner wall are connected via a plurality of connecting rods.

4. The plasma processing apparatus according to claim 2, wherein: The airflow balancing component also includes: A plurality of supporting legs are arranged at the bottom of the airflow balancing component to support the airflow balancing component.

5. The plasma processing apparatus according to claim 1, wherein: The staggered overlapping range of the partitions in the first area is larger than the staggered overlapping range of the partitions in the second area, so that the air path channel formed between the partitions in the first area is larger than the air path channel in the second area.

6. The plasma processing apparatus according to claim 1, wherein: The circumferential range of the second region is greater than or equal to the circumferential range of the first region.

7. The plasma processing apparatus according to claim 1, wherein: The circumference of the first area ranges from 30° to 120°.

8. The plasma processing apparatus according to claim 1, wherein: The material of the airflow balancing component includes aluminum alloy, engineering plastic or stainless steel; And / or, the surface of the airflow balancing component is provided with a corrosion-resistant material coating.

9. The plasma processing apparatus according to claim 8, wherein: The corrosion-resistant material coating is a Teflon coating, an yttrium oxide film or an anodized layer.

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