Semiconductor device

Abstract

The present application provides a semiconductor device capable of improving characteristics. According to an embodiment, the semiconductor device includes a first electrode, a second electrode, a third electrode, a first conductive member, and a first insulating member. A direction from the first electrode to the second electrode is along a first direction. The first insulating member includes a first position, a second position, and a third position. A direction from an end portion of the first conductive member to the first position is along a second direction. The first position is between the first electrode and the second position in the first direction. The third position is between the first position and the second position in the first direction. The first element includes at least one selected from a group consisting of hydrogen, helium, argon, and carbon. A third concentration of the first element at the third position is higher than a first concentration of the first element at the first position, and is higher than a second concentration of the first element at the second position.

Description

[0001] This application is based on Japanese Patent Application No. 2021-036912 (filed on March 9, 2021) and claims priority thereto. This application incorporates the entire contents of the application by reference. TECHNICAL FIELD

[0002] Embodiments of the present application relate to a semiconductor device. BACKGROUND

[0003] For example, in a semiconductor device such as a transistor, improvement of characteristics is desired. SUMMARY

[0004] Embodiments of the present application provide a semiconductor device capable of improving characteristics.

[0005] According to an embodiment of the present application, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first conductive member, a semiconductor member, and a first insulating member. A first direction is from the first electrode to the second electrode. The first conductive member includes a first conductive member end portion and a first conductive member other end portion. The first conductive member end portion is between the first electrode and the first conductive member other end portion in the first direction. A position of the first conductive member end portion in the first direction is between a position of the first electrode in the first direction and a position of the third electrode in the first direction. The first conductive member is electrically connected to one of the second electrode and the third electrode. Alternatively, the first conductive member is electrically connectable to the one. The semiconductor member includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type. The first semiconductor region includes a first partial region and a second partial region. The first partial region is between the first electrode and the second electrode in the first direction. The second semiconductor region is between the first partial region and the third semiconductor region in the first direction. The third semiconductor region is electrically connected to the second electrode. A second direction from a portion of the third electrode to the second semiconductor region crosses the first direction. A direction from another portion of the third electrode to a portion of the first partial region is along the second direction. A direction from the second partial region to the first conductive member is along the first direction. A direction from the first conductive member to the first partial region is along the second direction. At least a portion of the first insulating member is between the semiconductor member and the third electrode and between the semiconductor member and the first conductive member. At least a portion of the first insulating member includes silicon, oxygen, and a first element. The first element includes at least one selected from a group consisting of hydrogen, helium, argon, and carbon. The first insulating member includes a first position, a second position, and a third position. A direction from the first conductive member end portion to the first position is along the second direction. The first position is between the first electrode and the second position in the first direction. The third position is between the first position and the second position in the first direction. A third concentration of the first element at the third position is higher than a first concentration of the first element at the first position and higher than a second concentration of the first element at the second position.

[0006] According to the semiconductor device described above, a semiconductor device capable of improving characteristics can be provided. BRIEF DESCRIPTION OF DRAWINGS

[0007] Figure 1 is a schematic cross-sectional view illustrating a semiconductor device of a first embodiment.

[0008] Figure 2 is a schematic cross-sectional view illustrating a semiconductor device of the first embodiment.

[0009] Figure 3 is a graph illustrating a semiconductor device of the first embodiment.

[0010] Figure 4 (a) of FIG. 8 and Figure 4 (b) of FIG. 8 is a graph illustrating a characteristic of a semiconductor device.

[0011] Figure 5 is a graph illustrating a semiconductor device of the first embodiment.

[0012] Figure 6 is a schematic cross-sectional view illustrating a semiconductor device of the second embodiment.

[0013] Explanation of Reference Numerals

[0014] 10 semiconductor member, 11-15 first to fifth semiconductor regions, 11a, 11b first and second partial regions, 41 first insulating member, 41a, 41b first and second insulating regions, 51-53 first to third electrodes, 52C connecting member, 52LL connecting member, 52T terminal, 53C connecting member, 53T terminal, 53a third electrode end portion, 53b third electrode other end portion, 61 first conductive member, 61C connecting member, 61T terminal, 61a first conductive member end portion, 61b first conductive member other end portion, 110, 111 semiconductor device, C1 concentration, PE1 electric potential, Rt1 thickness ratio, Vb withstand voltage, dl, d2 first and second distances, dz distance, pl-p4 first to fourth positions, pZ position DETAILED DESCRIPTION

[0015] Hereinafter, each embodiment of the present application will be described with reference to the drawings.

[0016] The drawings are schematic or conceptual, not intended to be drawn to scale, and the relationship between the thickness and width of each portion, the ratio of sizes of portions, and the like, are not always the same as that in reality. Even in the case of the same portion, the size or the ratio thereof can be different depending on the drawing.

[0017] In the specification and drawings of the present application, elements having the same function or the same configuration are denoted by the same reference numerals, and detailed description thereof will not be repeated.

[0018] (First Embodiment)

[0019] Figure 1 andFigure 2 is a schematic cross-sectional view illustrating a semiconductor device of a first embodiment.

[0020] As Figure 1 shown, the semiconductor device 110 of the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first conductive member 61, a semiconductor member 10, and a first insulating member 41.

[0021] The direction from the first electrode 51 to the second electrode 52 is along a first direction. The first direction is set as a Z-axis direction. A direction perpendicular to the Z-axis direction is set as an X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is set as a Y-axis direction.

[0022] In one example, the position of the third electrode 53 in the first direction (Z-axis direction) is between the position of the first electrode 51 in the first direction and the position of the second electrode 52 in the first direction.

[0023] The first conductive member 61 includes a first conductive member end portion 61a and a first conductive member other end portion 61b. The first conductive member end portion 61a and the first conductive member other end portion 61b are end portions in the Z-axis direction. The first conductive member end portion 61a is between the first electrode 51 and the first conductive member other end portion 61b in the first direction. The first conductive member end portion 61a is, for example, a lower end portion. The position of the first conductive member end portion 61a in the first direction is between the position of the first electrode 51 in the first direction and the position of the third electrode end portion 53a in the first direction.

[0024] In this example, the third electrode 53 includes a third electrode end portion 53a and a third electrode other end portion 53b. The third electrode end portion 53a and the third electrode other end portion 53b are end portions in the Z-axis direction. The third electrode end portion 53a is between the first electrode 51 and the third electrode other end portion 53b in the first direction (Z-axis direction). The third electrode end portion 53a is the end portion of the third electrode 53 on the first electrode 51 side. The third electrode end portion 53a is, for example, a lower end portion.

[0025] In this example, the position of the first conductive member end portion 61a in the first direction (Z-axis direction) is between the position of the first electrode 51 in the first direction and the position of the third electrode end portion 53a in the first direction. In this example, the position of the first conductive member other end portion 61b in the first direction is between the position of the first electrode 51 in the first direction and the position of the third electrode other end portion 53b in the first direction. In this example, the position of the first conductive member other end portion 61b in the first direction is between the position of the third electrode end portion 53a in the first direction and the position of the third electrode other end portion 53b in the first direction. The first conductive member 61 extends in the Z-axis direction.

[0026] The first conductive member 61 is electrically connected to one of the second electrode 52 and the third electrode 53. Alternatively, the first conductive member 61 can be electrically connected to one of the second electrode 52 and the third electrode 53. In the semiconductor device 110, the first conductive member 61 is electrically connected to the second electrode 52.

[0027] For example, as shown in FIG. 1, the first conductive member 61 is electrically connected to the second electrode 52 via a connection member 61C, a connection member 52LL, and a connection member 52C. These connection members can be provided at positions different from those illustrated in the cross section. Figure 1 For example, as shown in FIG. 1, the first conductive member 61 is electrically connected to the second electrode 52 via a connection member 61C, a connection member 52LL, and a connection member 52C. These connection members can be provided at positions different from those illustrated in the cross section. Figure 1 For example, as shown in FIG. 1, the first conductive member 61 is electrically connected to the second electrode 52 via a connection member 61C, a connection member 52LL, and a connection member 52C. These connection members can be provided at positions different from those illustrated in the cross section.

[0028] The semiconductor member 10 is located between the first electrode 51 and the second electrode 52, for example. The semiconductor member 10 contains a semiconductor such as silicon, for example.

[0029] The semiconductor member 10 contains a first semiconductor region 11 of a first conductive type, a second semiconductor region 12 of a second conductive type, and a third semiconductor region 13 of the first conductive type. As shown in FIG. 1, the semiconductor member 10 can further contain a fourth semiconductor region 14, for example. Figure 1 As shown in FIG. 1, the semiconductor member 10 can further contain a fifth semiconductor region 15, for example. Figure 1 As shown in FIG. 1, the semiconductor member 10 can further contain a fifth semiconductor region 15, for example.

[0030] For example, the first conductive type is n-type, and the second conductive type is p-type. In an embodiment, the first conductive type can be p-type, and the second conductive type can be n-type. In the following examples, the first conductive type is n-type, and the second conductive type is p-type.

[0031] The first semiconductor region 11 contains a first partial region 11a and a second partial region 11b. The first partial region 11a is located between the first electrode 51 and the second electrode 52 in the first direction (Z-axis direction), for example.

[0032] The second semiconductor region 12 is located between the first partial region 11a and the third semiconductor region 13 in the first direction (Z-axis direction). For example, the first partial region 11a, the second semiconductor region 12, and the third semiconductor region 13 are present between the first electrode 51 and the second electrode 52. The third semiconductor region 13 is electrically connected to the second electrode 52.

[0033] A second direction of the second semiconductor region 12 from a part of the third electrode 53 intersects the first direction. The second direction is the X-axis direction, for example.

[0034] A direction from the other part of the third electrode 53 to the part of the first partial region 11a is along the second direction (e.g., the X-axis direction).

[0035] A direction from the second partial region 11b of the first semiconductor region 11 to the first conductive member 61 is along the first direction (the Z-axis direction). A direction from the first conductive member 61 to the first partial region 11a is along the second direction (e.g., the X-axis direction).

[0036] The fourth semiconductor region 14 is provided between the first electrode 51 and the first semiconductor region 11 in the first direction (the Z-axis direction). The fourth semiconductor region 14 is of the first conductive type (e.g., n-type). The fourth semiconductor region 14 is electrically connected to the first electrode 51. The fourth semiconductor region 14 may, for example, also include a semiconductor substrate.

[0037] The carrier concentration of the first conductive type in the fourth semiconductor region 14 is higher than the carrier concentration of the first conductive type in the first semiconductor region 11. The first semiconductor region 11 is, for example, an n region or an n - region. The fourth semiconductor region 14 is, for example, an n + region. By providing the fourth semiconductor region 14, the electrical resistance of the electrical connection of the first electrode 51 can be reduced. For example, a lower on-resistance can be obtained.

[0038] The carrier concentration of the first conductive type in the third semiconductor region 13 is higher than the carrier concentration of the first conductive type in the first semiconductor region 11. The third semiconductor region 13 is, for example, an n + region.

[0039] In a case where the fifth semiconductor region 15 is provided, the fifth semiconductor region 15 is provided, for example, between the second semiconductor region 12 and the second electrode 52. The fifth semiconductor region 15 is of the second conductive type (e.g., p-type). The carrier concentration of the second conductive type in the fifth semiconductor region 15 is higher than the carrier concentration of the second conductive type in the second semiconductor region 12. The second semiconductor region 12 is, for example, a p region. The fifth semiconductor region 15 is a p + region. By providing the fifth semiconductor region 15, the electrical resistance of the electrical connection of the second electrode 52 can be reduced. For example, a lower on-resistance can be obtained.

[0040] In this example, the second electrode 52 includes a part 52a and a part 52b. The fifth semiconductor region 15 is located between the second semiconductor region 12 and the part 52a. The third electrode 53 is located between the first electrode 51 and the part 52b.

[0041] At least a portion of the first insulating member 41 is located between the semiconductor member 10 and the third electrode 53, and between the semiconductor member 10 and the first conductive member 61. For example, the first insulating member 41 includes a first insulating region 41a and a second insulating region 41b. The first insulating region 41a is located, for example, between the third electrode 53 and the second semiconductor region 12 in a second direction (e.g., the X-axis direction). The second insulating region 41b is located between the first conductive member 61 and the semiconductor member 10. In this example, a portion of the first insulating member 41 is located between the third electrode 53 and portion 52b.

[0042] For example, the current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 is, for example, a potential referenced to the potential of the second electrode 52. The first electrode 51 functions, for example, as a drain electrode. The second electrode 52 functions, for example, as a source electrode. The third electrode 53 functions, for example, as a gate electrode. The first insulating region 41a functions, for example, as a gate insulating film. The first conductive component 61 functions, for example, as a field plate. The semiconductor device 110 is, for example, a transistor.

[0043] In one embodiment, at least a portion of the first insulating component 41 comprises silicon, oxygen, and a first element. The first element comprises at least one selected from the group consisting of hydrogen, helium, argon, and carbon. In one example, the first element is, for example, hydrogen or a proton.

[0044] like Figure 1 As shown, the first insulating component 41 includes a first position p1, a second position p2, and a third position p3. Along a second direction (e.g., the X-axis direction) from the end 61a of the first conductive component toward the first position p1, the position (e.g., depth) of the first position p1 in the Z-axis direction corresponds to the depth of the lower end of the first conductive component 61.

[0045] The first position p1 is located between the first electrode 51 and the second position p2 in the first direction (Z-axis direction). The second position p2 is higher than the first position p1. For example, the distance along the Z-axis between the second position p2 and other ends 61b of the first conductive component is shorter than the distance along the Z-axis between the second position p2 and end 61a of the first conductive component.

[0046] The third position p3 is located between the first position p1 and the second position p2 in the first direction (Z-axis direction). In this embodiment, the concentration of the first element is different at these positions. The concentration of the first element varies along the Z-axis direction.

[0047] The following example illustrates the distribution of the concentration of the first element.

[0048] Figure 3is a graph illustrating the semiconductor device of the first embodiment.

[0049] Figure 3 The concentration of the first element (e.g., a proton) in the semiconductor device 110 is illustrated. Figure 3 The horizontal axis is the position pZ in the direction of the Z axis. The position pZ corresponds to the depth. The vertical axis is the concentration Cl of the first element (logarithmic display).

[0050] As Figure 3 illustrated, the concentration of the first element at the first position p1 (first concentration) is higher than the concentration of the first element at the second position p2 (second concentration). The concentration of the first element at the third position p3 (third concentration) is higher than the first concentration of the first element at the first position p1 and higher than the second concentration of the first element at the second position p2. For example, the third concentration is the highest concentration of the first element in the first insulating member 41.

[0051] The first element can function as a positive charge, for example. According to Figure 3 the distribution illustrated in FIG. 6, a higher withstand voltage is obtained. For example, there is a tendency that the withstand voltage becomes lower if the concentration of the first element at a shallow position (e.g., the second position p2) (second concentration) is high. By reducing the concentration of the first element at the shallow position (e.g., the second position p2) (second concentration), a higher withstand voltage can be maintained. On the other hand, by increasing the concentration of the first element at a deep position (e.g., the first position p1) (first concentration), the impurity concentration of the first conductivity type in the first semiconductor region 11 can be set higher. Thus, the on-resistance can be reduced. In the embodiment, by reducing the concentration of the first element at the shallow position compared to the deep position, a higher withstand voltage can be obtained. A lower on-resistance is obtained. According to the embodiment, a semiconductor device capable of improving characteristics can be provided.

[0052] Also, it is known that by increasing the concentration of the first element at the third position p3 which is higher than the first position p1, a higher withstand voltage can be obtained. An example of the relationship between the position of the peak of the first element and the withstand voltage will be described later.

[0053] Figure 3 The distribution of the first element illustrated is obtained, for example, by introducing the first element into a processed body including the semiconductor member 10 and the first insulating member 41 using ion implantation or the like. In this case, the first element can also be introduced into a part of the first semiconductor region 11 of the semiconductor member 10.

[0054] For example, as Figure 1 illustrated, the first insulating member 41 can also include a fourth position p4. The fourth position p4 is located between the first electrode 51 and the first position p1 in the first direction (the direction of the Z axis). As Figure 3As shown, the concentration of the first element in the fourth position p4 (the fourth concentration) is lower than the concentration of the first element in the first position p1 (the first concentration). The fourth position p4 is, for example, the lower end of the first insulating member 41 (the portion that contacts the second portion region 11b of the first semiconductor region 11).

[0055] like Figure 3 As shown, at least a portion of the second portion of the first semiconductor region 11b may also contain the first element. The concentration of the first element in at least a portion of the second portion of the second portion of the region 11b is lower than the concentration of the first element at the fourth position p4 (the fourth concentration).

[0056] For example, such as Figure 2 and Figure 3 As shown, the distance between the first position p1 and the third position p3 along the first direction (Z-axis direction) is defined as the first distance d1. The distance between the second portion region 11b and the end of the first conductive component 61a along the first direction is defined as the distance dz. The distance dz corresponds, for example, to the thickness of the first insulating component 41 at the lower end (end of the first conductive component 61a) of the first conductive component 61.

[0057] In an implementation, for example, the first distance d1 is more than 0 times but less than 3 times the distance dz. The concentration of the first element at the third position p3 (the third concentration) is more than 1 times but less than 10 times the concentration of the first element at the first position p1 (the first concentration).

[0058] For example, such as Figure 2 and Figure 3 As shown, the distance along the first direction (Z-axis direction) between the second position p2 and the other end 61b of the first conductive component is defined as the second distance d2. The second distance d2 is set to be the same as the distance dz (the distance along the first direction between the second portion region 11b and the end 61a of the first conductive component). In the case of the second position p2, for example, the concentration of the first element (first concentration) at the first position p1 is, for example, more than twice and less than 100 times the concentration of the first element (second concentration) at the second position p2.

[0059] This distribution of the first element results in higher withstand voltage and lower on-resistance.

[0060] The following examples illustrate simulation results relating the peak position of the first element concentration to the pressure resistance.

[0061] Figure 4 (a) and Figure 4 (b) is a graph illustrating the characteristics of a semiconductor device.

[0062] Figure 4 The horizontal axis of (a) is the position pZ along the Z-axis. When the position pZ is small, in Figure 1 In the middle, it corresponds to the upper side in the Z-axis direction.

[0063] Figure 4 The horizontal axis of (b) represents the thickness ratio Rt1. The thickness ratio Rt1 is the ratio of the first distance d1 to the distance dz (d1 / dz). The first distance d1 is the distance along the first direction between the first position p1 and the third position p3. The distance dz is the distance along the first direction between the second portion region 11b and the end of the first conductive component 61a. When the thickness ratio Rt1 is positive, the third position p3, compared to the first position p1, is... Figure 1 The middle part is near the top. When the thickness ratio Rt1 is negative, the third position p3 is different from the first position p1. Figure 1 Lower middle.

[0064] Figure 4 (a) and Figure 4 The vertical axis of (b) is the withstand voltage Vb. Figure 4 (a) and Figure 4 The characteristics of the first to sixth structures CF1 to CF6 are shown in (b).

[0065] In the first to third structures CF1 to CF3, the concentration of the first element in the first insulating component 41 is constant along the Z-axis direction, at 1.0 × 10⁻⁶. 16 cm -3 In the first to third structures CF1 to CF3, the on-resistance RonA can be controlled by changing the carrier concentration of the first conductivity type in the first semiconductor region 11. In the first structure CF1, the on-resistance RonA is set to 24 mΩ / cm. 2 The carrier concentration of the first conductivity type in the first semiconductor region 11 is set in a certain manner. In the second structure CF2, the on-resistance RonA is 25mΩcm. 2 The carrier concentration of the first conductivity type in the first semiconductor region 11 is set in a certain manner. In the third structure CF3, the on-resistance RonA is 26mΩcm. 2 The carrier concentration of the first conductivity type in the first semiconductor region 11 is set in a certain way.

[0066] In structures CF4-CF6 (fourth to sixth), the concentration of the first element in the first insulating component 41 varies along the Z-axis. That is, the third concentration is higher than the first concentration and also higher than the second concentration. The distribution of the first element concentration has… Figure 3The illustrated shape. In the fourth to sixth structures CF4 to CF6, the on-resistance RonA changes by changing the third concentration (highest concentration) and the position (depth) of the third position p3 in the Z-axis direction to obtain the third concentration.

[0067] In the fourth structure CF4, the carrier concentration of the first conductivity type in the first semiconductor region 11 of the first structure CF1 is applied. In the fourth structure CF4, the on-resistance RonA is 24 mΩcm. 2 The method changes the third concentration (the highest concentration) and obtains the position (depth) of the third position p3 in the Z-axis direction of the third concentration.

[0068] In the fifth structure CF5, the carrier concentration of the first conductivity type in the first semiconductor region 11 of the second structure CF2 is applied. In the fifth structure CF5, the on-resistance RonA is 25mΩcm. 2 The method changes the third concentration (the highest concentration) and obtains the position (depth) of the third position p3 in the Z-axis direction of the third concentration.

[0069] In the sixth structure CF6, the carrier concentration of the first conductivity type in the first semiconductor region 11 of the third structure CF3 is applied. In the sixth structure CF6, the on-resistance RonA is 26mΩcm. 2 The method changes the third concentration (highest concentration) and obtains the position (depth) of the third position p3 in the Z-axis direction of the third concentration.

[0070] These figures show the withstand voltage Vb in the first to third structures CF1 to CF3. The withstand voltage Vb in the first structure is approximately 111.4V. The withstand voltage Vb in the second structure CF2 is approximately 102.5V. The withstand voltage Vb in the third structure CF3 is approximately 112.5V.

[0071] like Figure 4 As shown in (a), in the fourth to sixth structures CF4 to CF6, the position pZ at the third position p3, where the highest concentration (third concentration) is obtained, is smaller than that at the fourth position p4 (i.e., it is smaller). Figure 1 When the concentration is in the upper middle position, a higher withstand voltage Vb is obtained. When the highest concentration (third concentration) is obtained at the third position p3, pZ is less than the first position p1 (i.e., at the upper middle position). Figure 1 When the upper side of the middle is used, a higher withstand voltage Vb is obtained.

[0072] according to Figure 4 (a) For example, the first distance d1 between the first position p1 and the third position p3 along the first direction is preferably greater than 0 μm and less than 1.2 μm.

[0073] like Figure 4In the fourth to sixth structures CF4 to CF6, as shown in (b), when the thickness ratio Rt1 is positive, and greater than 0 and 3 or less, a higher withstand voltage Vb is obtained.

[0074] Figure 5 is a graph illustrating the semiconductor device of the first embodiment.

[0075] Figure 5 illustrates the distribution of the potential in the semiconductor device. Figure 5 The horizontal axis is the position pZ in the direction of the Z axis. The vertical axis is the potential PE1.

[0076] As shown in Figure 5 , the potential at the third position p3 (third potential) is higher than the potential at the first position p1 (first potential), and higher than the potential at the second position p2 (second potential). For example, the first potential is higher than the second potential. For example, the potential at the third position p3 (third potential) is the highest of the potentials in the first insulating member 41.

[0077] For example, the first distance d1 in the first direction (Z axis direction) between the first position p1 and the third position p3 exceeds 0 times and is 3 times or less of the distance dz (distance in the first direction between the second partial region 11b and the first conductive member end portion 61a: refer to Figure 2 ). For example, the first distance d1 is greater than 0 μm and 1.2 μm or less.

[0078] (Second Embodiment)

[0079] Figure 6 is a schematic cross-sectional view illustrating the semiconductor device of the second embodiment.

[0080] As shown in Figure 6 , the semiconductor device 111 of the embodiment also includes the first electrode 51, the second electrode 52, the third electrode 53, the first conductive member 61, the semiconductor member 10, and the first insulating member 41. In the semiconductor device 111, the first conductive member 61 is electrically connected to the third electrode 53. Alternatively, the first conductive member 61 can be electrically connected to the third electrode 53. The structures other than this in the semiconductor device 111 can be the same as those of the semiconductor device 110.

[0081] As shown in Figure 6 , for example, the first conductive member 61 is electrically connected to the third electrode 53 via the connection member 61C, the connection member 52LL, and the connection member 53C. These connection members can be provided at positions corresponding to Figure 6The illustrated cross-sectional different positions. For example, the terminal 53T can also be connected with the third electrode 53 via the connection member 53C. The terminal 61T can also be electrically connected with the first conductive member 61 via the connection member 61C. The terminal 61T can also be electrically connected with the terminal 53T through the connection member 52LL. The connection member 52LL can also be provided separately from the semiconductor device 111.

[0082] In the semiconductor device 111 as well, the concentration of the first element in the first insulating member 41 has, for example, Figure 3 The illustrated distribution. Thereby, a higher withstand voltage is obtained. A lower on-resistance is obtained.

[0083] In the semiconductor device 111 as well, the potential in the first insulating member 41 has, for example, Figure 5 The illustrated distribution. Thereby, a higher withstand voltage is obtained. A lower on-resistance is obtained.

[0084] In the above-described embodiment, the carrier concentration of the first conductive type in the first semiconductor region 11 is, for example, preferably 1.0 x 10 15 cm -3 or more and 1.0 x 10 17 cm -3 or less. The carrier concentration of the second conductive type in the second semiconductor region 12 is, for example, preferably 1.0 x 10 16 cm -3 or more and 1.0 x 10 18 cm -3 or less. The carrier concentration of the first conductive type in the third semiconductor region 13 is, for example, preferably 3.0 x 10 18 cm -3 or more and 3.0 x 10 20 cm -3 or less. The carrier concentration of the first conductive type in the fourth semiconductor region 14 is, for example, preferably 1.0 x 10 17 cm -3 or more and 3.0 x 10 20 cm -3 or less. The carrier concentration of the second conductive type in the fifth semiconductor region 15 is, for example, preferably 1.0 x 10 18 cm -3 or more and 3.0 x 10 20 cm -3 or less.

[0085] In the above-described embodiments, for example, the impurity concentration of the first conductivity type in the third semiconductor region 13 is higher than the impurity concentration of the first conductivity type in the first semiconductor region 11. For example, the impurity concentration of the first conductivity type in the fourth semiconductor region 14 is higher than the impurity concentration of the first conductivity type in the first semiconductor region 11. For example, the impurity concentration of the second conductivity type in the fifth semiconductor region 15 is higher than the impurity concentration of the second conductivity type in the second semiconductor region 12.

[0086] The impurity concentration of the first conductivity type in the first semiconductor region 11 is, for example, preferably 1.0 x 1018atoms / cm3or more and 1.0 x 1020atoms / cm3or less. 15 cm -3 The impurity concentration of the second conductivity type in the second semiconductor region 12 is, for example, preferably 1.0 x 1018atoms / cm3or more and 1.0 x 1020atoms / cm3or less. 17 cm -3 The impurity concentration of the second conductivity type in the second semiconductor region 12 is, for example, preferably 1.0 x 1018atoms / cm3or more and 1.0 x 1020atoms / cm3or less. 16 cm -3 The impurity concentration of the second conductivity type in the second semiconductor region 12 is, for example, preferably 1.0 x 1018atoms / cm3or more and 1.0 x 1020atoms / cm3or less. 18 cm -3 The impurity concentration of the second conductivity type in the second semiconductor region 12 is, for example, preferably 1.0 x 1018atoms / cm3or more and 1.0 x 1020atoms / cm3or less. 18 cm -3 The impurity concentration of the second conductivity type in the second semiconductor region 12 is, for example, preferably 1.0 x 1018atoms / cm3or more and 1.0 x 1020atoms / cm3or less. 20 cm -3 The impurity concentration of the second conductivity type in the second semiconductor region 12 is, for example, preferably 1.0 x 1018atoms / cm3or more and 1.0 x 1020atoms / cm3or less. 17 cm -3 The impurity concentration of the second conductivity type in the second semiconductor region 12 is, for example, preferably 1.0 x 1018atoms / cm3or more and 1.0 x 1020atoms / cm3or less. 20 cm -3 The impurity concentration of the second conductivity type in the second semiconductor region 12 is, for example, preferably 1.0 x 1018atoms / cm3or more and 1.0 x 1020atoms / cm3or less. 18 cm -3 The impurity concentration of the second conductivity type in the second semiconductor region 12 is, for example, preferably 1.0 x 1018atoms / cm3or more and 1.0 x 1020atoms / cm3or less. 20 cm -3 The impurity concentration of the second conductivity type in the second semiconductor region 12 is, for example, preferably 1.0 x 1018atoms / cm3or more and 1.0 x 1020atoms / cm3or less.

[0087] In the embodiment, information about the shape and the like of the semiconductor region is obtained, for example, by electron microscope observation and the like. Information about the concentration of impurities in the semiconductor region is obtained, for example, by energy dispersive X-ray spectroscopy (EDX) or secondary ion mass spectrometry (SIMS) and the like. Information about the carrier concentration in the semiconductor region is obtained, for example, by scanning capacitance microscopy (SCM) and the like. The third concentration is, for example, the highest concentration of the first element in the first insulating member 41 on a straight line along the first direction (Z-axis direction) passing through the first position p1 and the second position p2. Information about the change in the relative concentration of the first element can also be obtained, for example, by photoluminescence analysis and the like. Information about the change in the relative concentration of the first element can also be obtained by electron microscope images.

[0088] In the embodiment, information about the potential is obtained, for example, by measurement of SNDP (Scanning nonlinear dielectric potentiometry) or EFM (Electrostatic Force Microscope) and the like.

[0089] The embodiment can include the following technical solutions.

[0090] (Technical Solution 1)

[0091] A semiconductor device includes:

[0092] a first electrode;

[0093] a second electrode along a first direction from the first electrode to the second electrode;

[0094] a third electrode;

[0095] a first conductive member including a first conductive member end portion and a first conductive member other end portion, the first conductive member end portion being located between the first electrode and the first conductive member other end portion in the first direction, the position of the first conductive member end portion in the first direction being between the position of the first electrode in the first direction and the position of the third electrode in the first direction, the first conductive member being electrically connected to or capable of being electrically connected to one of the second electrode and the third electrode;

[0096] A semiconductor component includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type; and

[0097] A first insulating component at least a part of which is located between the semiconductor component and the third electrode and between the semiconductor component and the first conductive component, at least a part of the first insulating component including silicon, oxygen, and a first element including at least one selected from the group consisting of hydrogen, helium, argon, and carbon, the first insulating component including a first position, a second position, and a third position, a direction from an end of the first conductive component to the first position being along the second direction, the first position being located between the first electrode and the second position in the first direction, the third position being located between the first position and the second position in the first direction, a third concentration of the first element at the third position being higher than a first concentration of the first element at the first position and higher than a second concentration of the first element at the second position,

[0098] In a semiconductor component,

[0099] The first semiconductor region includes a first partial region and a second partial region,

[0100] The first partial region is located between the first electrode and the second electrode in the first direction,

[0101] The second semiconductor region is located between the first partial region and the third semiconductor region in the first direction,

[0102] The third semiconductor region is electrically connected to the second electrode,

[0103] A second direction from a part of the third electrode to the second semiconductor region crosses the first direction,

[0104] A direction from another part of the third electrode to a part of the first partial region is along the second direction,

[0105] A direction from the second partial region to the first conductive component is along the first direction,

[0106] A direction from the first conductive component to the first partial region is along the second direction.

[0107] (Technical Solution 2)

[0108] The semiconductor device according to Technical Solution 1, wherein the first concentration is higher than the second concentration.

[0109] (Technical Solution 3)

[0110] The semiconductor device according to Technical Solution 1 or 2, wherein the third concentration is the highest concentration of the first element in the first insulating member.

[0111] (Technical Solution 4)

[0112] The semiconductor device according to Technical Solution 3, wherein a first distance between the first position and the third position in the first direction exceeds 0 times and is 3 times or less of a distance between the second partial region and the end portion of the first conductive member in the first direction.

[0113] (Technical Solution 5)

[0114] The semiconductor device according to Technical Solution 3, wherein the first distance between the first position and the third position in the first direction exceeds 0 pm and is 1.2 pm or less.

[0115] (Technical Solution 6)

[0116] The semiconductor device according to Technical Solution 3, wherein a second distance between the second position and the other end portion of the first conductive member in the first direction is the same as a distance between the second partial region and the end portion of the first conductive member in the first direction,

[0117] the first concentration is 2 times or more and 108 times or less of the second concentration.

[0118] (Technical Solution 7)

[0119] The semiconductor device according to any one of Technical Solutions 3 to 6, wherein the third concentration exceeds 1 times and is 10 times or less of the first concentration.

[0120] (Technical Solution 8)

[0121] The semiconductor device according to any one of Technical Solutions 1 to 7, wherein the first insulating member further includes a fourth position,

[0122] the fourth position is located between the first electrode and the first position in the first direction,

[0123] a fourth concentration of the first element at the fourth position is lower than the first concentration.

[0124] (Technical Solution 9)

[0125] The semiconductor device according to Technical Solution 8, wherein at least a portion of the second partial region contains the first element,

[0126] The concentration of the first element in the at least a part of the second partial region is lower than the fourth concentration.

[0127] (Technical Solution 10)

[0128] A semiconductor device includes:

[0129] a first electrode;

[0130] a second electrode along a first direction from the first electrode to the second electrode;

[0131] a third electrode;

[0132] a first conductive member including a first conductive member end portion and a first conductive member other end portion, the first conductive member end portion being located in the first direction between the first electrode and the first conductive member other end portion, the first conductive member end portion being located in the first direction between the first electrode and the third electrode, the first conductive member being electrically connected to or capable of being electrically connected to one of the second electrode and the third electrode;

[0133] a semiconductor member including a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type; and

[0134] a first insulating member including the first position, a second position, and a third position, the second direction from the first conductive member end portion to the first position, the first position being located in the first direction between the first electrode and the second position, the third position being located in the first direction between the first position and the second position, a third electric potential at the third position being higher than a first electric potential at the first position and higher than a second electric potential at the second position,

[0135] in the semiconductor member,

[0136] the first semiconductor region includes a first partial region and a second partial region,

[0137] the first partial region is located in the first direction between the first electrode and the second electrode,

[0138] the second semiconductor region is located in the first direction between the first partial region and the third semiconductor region,

[0139] the third semiconductor region is electrically connected to the second electrode,

[0140] a second direction from a part of the third electrode to the second semiconductor region crosses the first direction,

[0141] a direction from another part of the third electrode to a part of the first partial region is along the second direction,

[0142] a direction from the second partial region to the first conductive member is along the first direction,

[0143] the semiconductor member in a direction from the first conductive member to the first partial region is along the second direction.

[0144] (Embodiment 11)

[0145] The semiconductor device according to Embodiment 10, wherein the first potential is higher than the second potential.

[0146] (Embodiment 12)

[0147] The semiconductor device according to Embodiment 10 or 11, wherein the third potential is the highest among potentials in the first insulating member.

[0148] (Embodiment 13)

[0149] The semiconductor device according to Embodiment 12, wherein a first distance along the first direction between the first position and the third position exceeds 0 times and is 3 times or less of a distance along the first direction between the second partial region and the end of the first conductive member.

[0150] (Embodiment 14)

[0151] The semiconductor device according to Embodiment 12, wherein a first distance along the first direction between the first position and the third position exceeds 0 μm and is 1.2 μm or less.

[0152] (Embodiment 15)

[0153] The semiconductor device according to any one of Embodiments 1 to 14, wherein an impurity concentration of the first conductive type in the third semiconductor region is higher than a carrier concentration of the first conductive type in the first semiconductor region.

[0154] (Embodiment 16)

[0155] The semiconductor device according to any one of Embodiments 1 to 15, wherein the third electrode includes a third electrode end portion and a third electrode other end portion,

[0156] the third electrode end portion is located between the position of the first electrode in the first direction and the position of the third electrode other end portion in the first direction.

[0157] the position of the first conductive member end portion in the first direction is located between the position of the first electrode in the first direction and the position of the third electrode end portion in the first direction.

[0158] (Technical Solution 17)

[0159] The semiconductor device according to Technical Solution 16, wherein the position of the first conductive member other end portion in the first direction is located between the position of the first electrode in the first direction and the position of the third electrode other end portion in the first direction.

[0160] (Technical Solution 18)

[0161] The semiconductor device according to Technical Solution 16 or 17, wherein the position of the first conductive member other end portion in the first direction is located between the position of the third electrode end portion in the first direction and the position of the third electrode other end portion in the first direction.

[0162] (Technical Solution 19)

[0163] The semiconductor device according to any one of Technical Solutions 1 to 18, wherein the semiconductor member further includes a fourth semiconductor region of the first conductive type,

[0164] the fourth semiconductor region is provided between the first electrode and the first semiconductor region in the first direction,

[0165] the fourth semiconductor region is electrically connected to the first electrode.

[0166] (Technical Solution 20)

[0167] The semiconductor device according to any one of Technical Solutions 1 to 19, wherein the semiconductor member further includes a fifth semiconductor region of the second conductive type,

[0168] the fifth semiconductor region is provided between the second semiconductor region and the second electrode,

[0169] a carrier concentration of the second conductive type in the fifth semiconductor region is higher than a carrier concentration of the second conductive type in the second semiconductor region.

[0170] According to the embodiments, it is possible to provide a semiconductor device capable of improving characteristics.

[0171] The above describes embodiments of the present application with reference to specific examples. However, the present application is not limited to these specific examples. For example, as to the specific configuration of each element such as a semiconductor component, a semiconductor region, a conductive component, an electrode, and an insulating component included in the semiconductor device, as long as the present application can be implemented by a person skilled in the art by appropriately selecting from a known range, the same effects can be obtained, and thus it is included in the scope of the present application.

[0172] Further, as long as the combination of two or more elements of each specific example is within a technically possible range and includes the gist of the present application, it is included in the scope of the present application.

[0173] In addition, as long as all semiconductor devices obtained by a person skilled in the art by appropriately making design changes based on the semiconductor device described as an embodiment of the present application include the gist of the present application, they are within the scope of the present application.

[0174] In addition, it should be understood that various modifications and changes can be made by a person skilled in the art within the scope of the present application, and they are within the scope of the present application.

[0175] Several embodiments of the present application have been described, but these embodiments are presented as examples, and are not intended to limit the scope of the application. These new embodiments can be implemented in various other forms, and various omissions, substitutions, and changes can be made within the scope of the gist of the present application. These embodiments and modifications are included in the scope and gist of the present application, and are included in the scope of the application and its equivalents described in the claims.

Claims

1. A semiconductor device comprising: a first electrode; a second electrode along a first direction from the first electrode toward the second electrode; a third electrode; a first conductive member including a first conductive member end portion and a first conductive member other end portion, the first conductive member end portion being located in the first direction between the first electrode and the first conductive member other end portion, the first conductive member end portion being located in the first direction between the first electrode and the third electrode, the first conductive member being electrically connectable to one of the second electrode and the third electrode; and a semiconductor member including a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type.and a first insulating member, at least a part of the first insulating member is located between the semiconductor member and the third electrode and between the semiconductor member and the first conductive member, at least a part of the first insulating member contains silicon, oxygen, and a first element, the first element contains at least one selected from the group consisting of hydrogen, helium, argon, and carbon, the first insulating member contains a first position, a second position, and a third position, a direction from an end of the first conductive member to the first position is along a second direction from a part of the third electrode to the second semiconductor region, the first position is between the first electrode and the second position in the first direction, the third position is between the first position and the second position in the first direction, the second position is between the third position and the third electrode in the first direction as a whole, a third concentration of the first element at the third position is higher than a first concentration of the first element at the first position and higher than a second concentration of the first element at the second position, in the semiconductor member, the first semiconductor region contains a first partial region and a second partial region, the first partial region is between the first electrode and the second electrode in the first direction, the second semiconductor region is between the first partial region and a third semiconductor region in the first direction, the third semiconductor region is electrically connected to the second electrode, the second direction intersects the first direction, a direction from another part of the third electrode to a part of the first partial region is along the second direction, a direction from the second partial region to the first conductive member is along the first direction, a direction from the first conductive member to the first partial region is along the second direction, the third concentration is the highest concentration of the first element in the first insulating member, a first distance between the first position and the third position in the first direction exceeds 0 times and is 3 times or less of a distance between the second partial region and the end of the first conductive member in the first direction.

2. The semiconductor device according to claim 1, wherein The first conductive member is electrically connected to one of the second electrode and the third electrode.

3. The semiconductor device according to claim 1 or 2, wherein The first concentration is higher than the second concentration.

4. The semiconductor device according to claim 1 or 2, wherein The first insulating member further includes a fourth position between the first electrode and the first position in the first direction, and a fourth concentration of the first element at the fourth position is lower than the first concentration.

5. The semiconductor device according to claim 4, wherein At least a part of the second partial region includes the first element, and a concentration of the first element in the at least a part of the second partial region is lower than the fourth concentration.

6. The semiconductor device according to claim 1 or 2, wherein The semiconductor member further includes a fourth semiconductor region of the first conductive type, which is provided between the first electrode and the first semiconductor region in the first direction, The fourth semiconductor region is electrically connected to the first electrode.

7. The semiconductor device according to claim 1 or 2, wherein The semiconductor member further includes a fifth semiconductor region of the second conductive type, which is provided between the second semiconductor region and the second electrode, and a carrier concentration of the second conductive type in the fifth semiconductor region is higher than a carrier concentration of the second conductive type in the second semiconductor region.

8. A semiconductor device comprising: a first electrode; a second electrode along a first direction from the first electrode toward the second electrode; a third electrode; a first conductive member including a first conductive member end portion and a first conductive member other end portion, the first conductive member end portion being located in the first direction between the first electrode and the first conductive member other end portion, the first conductive member end portion being located in the first direction between the first electrode and the third electrode, the first conductive member being electrically connected to or capable of being electrically connected to one of the second electrode and the third electrode; a semiconductor member including a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type, and a first insulating member including a first position, a second position, and a third position, a second direction from the third electrode to the second semiconductor region along a direction from the first conductive member end portion to the first position, the first position being located in the first direction between the first electrode and the second position, the third position being located in the first direction between the first position and the second position, the second position being located in the first direction between the third position and the third electrode as a whole, a third potential at the third position being higher than a first potential at the first position and higher than a second potential at the second position, the first semiconductor region including a first partial region and a second partial region in the semiconductor member, the first partial region being located in the first direction between the first electrode and the second electrode, the second semiconductor region being located in the first direction between the first partial region and the third semiconductor region, the third semiconductor region being electrically connected to the second electrode, the second direction intersecting the first direction, a direction from the other portion of the third electrode to a portion of the first partial region along the second direction, a direction from the second partial region to the first conductive member along the first direction, a direction from the first conductive member to the first partial region along the second direction, the third potential being the highest potential in the first insulating member, a first distance in the first direction between the first position and the third position exceeding 0 times and being 3 times or less of a distance in the first direction between the second partial region and the first conductive member end portion.

9. The semiconductor device according to claim 8, wherein The first potential is higher than the second potential.

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