Light emitting device and method of manufacturing the same

Abstract

A method for manufacturing a light emitting device includes the following steps. A light emitting element is formed. A simulation of an super interface is performed by an electronic computer. Based on the simulation, the super interface is formed. The super interface is placed on a light emitting side of the light emitting element. The simulation of the super interface by the electronic computer includes the following steps. A super interface model of the super interface is established, wherein the super interface model has a plurality of unit cells, and a plurality of phase compensation values of the unit cells are periodically distributed in a folding direction with a super cell period length. The phase compensation values of the unit cells are adjusted and a light source with a light emitting wavelength is set to simulate a plurality of transmittances of the super interface model at different phase compensation values. A phase compensation value at a transmittance peak of the transmittances is selected as a plurality of process parameters of the super interface. In this way, light emitting energy loss of the light emitting element can be reduced, and performance of a final integrated device can be improved.

Description

Technical Field

[0001] This invention relates to a light-emitting device and a method for manufacturing the same. Background Technology

[0002] With advancements in display technology, meta-interfaces can be used to control or improve visual effects. Meta-interfaces can be applied to light-emitting elements (LEDs) to further control the light beam emitted by passive LEDs, and the size of the meta-interface can be similar to or even smaller than the emission wavelength of the LED. For example, the meta atoms that make up the meta-interface have a subwavelength geometry. However, directly integrating the meta-interface into the LED can affect the integration accuracy and the performance of the final integrated device due to the small size of the meta-interface itself, and may even lead to energy loss.

[0003] Therefore, how to provide a solution to mitigate the strong reflection phenomenon occurring at heterogeneous integration interfaces, reduce the light emission energy loss of light-emitting elements, and further improve the performance of the light-emitting device that ultimately integrates light-emitting elements and ultra-modular interfaces is one of the issues that those skilled in the art want to solve. Summary of the Invention

[0004] One aspect of the present invention relates to a method for manufacturing a light-emitting device.

[0005] According to one or more embodiments of the present invention, a method for manufacturing a light-emitting device includes the following steps: forming a light-emitting element; performing a simulation of a meta-interface using a calculator; forming a meta-interface based on the aforementioned simulation; placing the meta-interface on the light-emitting side of the light-emitting element. The simulation of the meta-interface using a calculator includes the following steps: determining the deflection direction and deflection angle; determining the supercell period length of the meta-interface in the deflection direction based on the deflection angle and the light-emitting wavelength of the light-emitting element; establishing a meta-interface model of the meta-interface, wherein the meta-interface model has multiple unit cells, and multiple phase compensation values ​​of the unit cells are periodically distributed in the deflection direction with supercell period lengths; adjusting the phase compensation values ​​of the unit cells and setting a light source with an emission wavelength to simulate multiple transmittances of the meta-interface model under different phase compensation values; selecting the phase compensation value at the transmittance peak as multiple process parameters of the meta-interface.

[0006] In one or more embodiments of the present invention, the formed meta-interface further includes a transparent substrate. Meta atoms are formed on the transparent substrate. Placing the meta-interface on the light-emitting side of the light-emitting element includes the following process: heterogeneously bonding the transparent substrate of the meta-interface to the light-emitting side of the light-emitting element.

[0007] In one or more embodiments of the present invention, the unit cells are arranged periodically in a hexagonal lattice.

[0008] In one or more embodiments of the present invention, each unit cell includes a metaparticle pillar. The metaparticle pillar comprises a plurality of square pillars or a plurality of cylinders of the same height. The metaparticle pillars of the unit cell each generate a phase compensation value for the unit cell. Adjusting the phase compensation value of the unit cell includes the following process: adjusting multiple widths of the metaparticle pillars.

[0009] In one or more embodiments of the present invention, when a simulation of a superinterface is performed using a calculator, the supercell period length is defined by a plurality of identical supercells from the unit cell of the superinterface model. Each supercell includes a first unit cell and a plurality of subordinate unit cells. The first unit cell has a first phase compensation value. The plurality of subordinate unit cells are arranged equidistantly relative to the first unit cell along the deflection direction. The subordinate unit cells have a plurality of subordinate phase compensation values. The phase compensation values ​​increase arithmetically relative to the first phase compensation value along the deflection direction. Adjusting the phase compensation value of the unit cell includes the following process: For each supercell, the first phase compensation value of the first unit cell is adjusted, and the subordinate phase compensation values ​​of the subordinate unit cells are adjusted accordingly to the first phase compensation value.

[0010] One aspect of the present invention relates to a method for manufacturing a light-emitting device.

[0011] According to one or more embodiments of the present invention, a method for manufacturing a light-emitting device includes the following steps: forming a light-emitting element; forming a meta-interface, wherein the meta-interface has a plurality of unit cells, each unit cell having a meta-atom pillar with a corresponding phase compensation value, the meta-atom pillars having the same height and different widths, and the meta-atom pillars being periodic in a deflection direction to the period length of the supercell having the meta-interface, wherein the period length of the supercell is determined by a predetermined deflection angle and the emission wavelength of the light-emitting element; and bonding the meta-interface to the light-emitting side of the light-emitting element.

[0012] In one or more embodiments of the present invention, the method of manufacturing a light-emitting device further includes the following steps: Before bonding the meta-interface to the light-emitting side of the light-emitting element, the transmittance of the meta-interface is detected.

[0013] One aspect of the present invention relates to a light-emitting device.

[0014] According to one or more embodiments of the present invention, a light-emitting device includes a light-emitting element and a meta-interface. The light-emitting element includes a light-emitting side and has a light source with an emission wavelength. The meta-interface is located on the light-emitting side of the light-emitting element. The meta-interface includes a plurality of unit cells periodically arranged along a supercell period length along a deflection direction. Each unit cell has a supercell atom pillar with a corresponding phase compensation value relative to the emission wavelength. The supercell period length defines a plurality of identical supercells from the unit cells. Each supercell includes a first unit cell and a plurality of subordinate unit cells. The first unit cell has a first supercell atom pillar corresponding to a first phase compensation value. The subordinate unit cells are arranged equidistantly relative to the first unit cell along the deflection direction. These subordinate unit cells each have a plurality of subordinate phase compensation values. These phase compensation values ​​increase arithmetically relative to the first phase compensation value along the deflection direction. The difference between these phase compensation values ​​and the first phase compensation value is less than 360 degrees. The first phase compensation value is set such that the meta-interface has a transmittance peak relative to the emission wavelength.

[0015] In one or more embodiments of the present invention, in each supercell, the first superpillar of the first unit cell and the superpillar of the subordinate unit cell have the same height and different widths, respectively.

[0016] In one or more embodiments of the present invention, the meta-interface further includes a transparent substrate. A meta-atom pillar of a unit cell is formed on the transparent substrate. The transparent substrate is hetero-bonded to the light-emitting side of the light-emitting element on one side opposite the meta-atom pillar.

[0017] In summary, according to one or more embodiments of the present invention, the deflection direction of light can be determined by modulating the phase compensation value of each unit cell within the supercell in the superinterface, thereby effectively reducing the light emission energy loss of the light-emitting element and further improving the efficiency of the final integrated device.

[0018] The above description is only used to illustrate the problem to be solved by the present invention, the technical means to solve the problem, and the effects produced, etc. The specific details of the present invention will be described in detail in the following embodiments and related drawings. Attached Figure Description

[0019] The advantages of this invention and the accompanying drawings should be better understood from the embodiments listed below, and with reference to the drawings. These drawings are merely illustrative of embodiments and should not be construed as limiting the specific embodiments or the scope of the claims.

[0020] Figure 1A A schematic exploded view of a light-emitting device is shown according to an embodiment of the present invention;

[0021] Figure 1B Draw Figure 1A Side view;

[0022] Figure 1C Draw a side view of the light-emitting device;

[0023] Figure 2A A schematic perspective view of an overlay interface is shown according to an embodiment of the present invention;

[0024] Figure 2B Draw Figure 2A Top view;

[0025] Figure 3A A schematic perspective view of a unit cell of a superstructure is shown according to an embodiment of the present invention;

[0026] Figure 3B Draw Figure 3A Top view;

[0027] Figure 4 An illustration according to an embodiment of the present invention Figure 3A A graph showing the relationship between the width of the superstructure in a unit cell, relative transmittance, and phase compensation value.

[0028] Figure 5A A schematic perspective view of a unit cell of a superstructure is shown according to an embodiment of the present invention;

[0029] Figure 5B Draw Figure 5A Top view;

[0030] Figure 6 An illustration according to an embodiment of the present invention Figure 5A A graph showing the relationship between the width of the superstructure in a unit cell, relative transmittance, and phase compensation value.

[0031] Figure 7A A schematic perspective view of a supercell of a superinterface is shown according to an embodiment of the present invention;

[0032] Figure 7B Draw Figure 7A Top view;

[0033] Figure 8 and Figure 9 Plot the modulation respectively Figure 7B A schematic diagram of the width of the Chinese Super League's atomic column;

[0034] Figure 10 A graph illustrating the relationship between the first phase compensation value and transmittance of the first unit cell in the supercell of a modulated superinterface is shown according to an embodiment of the present invention.

[0035] Figure 11A A schematic diagram illustrating the propagation of light rays and electric fields in the TM mode;

[0036] Figure 11B Draw a schematic diagram of the light rays and electric field of the TM mode in the XZ plane;

[0037] Figure 12A A schematic diagram illustrating the propagation of light rays and electric field in the TE mode;

[0038] Figure 12B Draw a schematic diagram of the light rays and electric field of the TE mode in the XZ plane;

[0039] Figure 13 A graph illustrating the relationship between light transmittance and different deflection angles is shown according to an embodiment of the present invention.

[0040] Figure 14 A schematic top view of a supercell of a superinterface according to an embodiment of the present invention; and

[0041] Figure 15 A flowchart illustrating a method for manufacturing a light-emitting device is shown according to an embodiment of the present invention. Detailed Implementation

[0042] The following detailed description provides examples in conjunction with the accompanying drawings. However, the provided examples are not intended to limit the scope of the invention, and the description of the structural operation is not intended to limit the order of execution. Any structure resulting from the recombination of elements, producing a device with equivalent functionality, is within the scope of this invention. Furthermore, the drawings are for illustrative purposes only and are not drawn to their original dimensions. For ease of understanding, the same or similar elements will be designated with the same symbols in the following description.

[0043] Furthermore, unless otherwise specified, the terms used throughout this specification and claims generally have their ordinary meaning in the context of the art, the invention, and the specific content. Certain terms used to describe the invention will be discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art in describing the invention.

[0044] In this document, terms such as "first," "second," etc., are used only to distinguish elements or methods of operation that have the same technical terminology, and are not intended to indicate order or limit the invention.

[0045] In addition, terms such as “include,” “including,” and “provide” are all open-ended restrictions in this article, meaning that they include but are not limited to.

[0046] Furthermore, in this document, unless otherwise specified in the text, “a” and “the” may refer to one or more. It will be further understood that the terms “comprising,” “including,” “having,” and similar words as used herein specify the features, regions, integers, steps, operations, elements, and / or components described herein, but do not exclude one or more other features, regions, integers, steps, operations, elements, components, and / or groups thereof described or additionally described herein.

[0047] Please refer to Figure 1A and Figure 1B . Figure 1A A schematic exploded view of a light-emitting device 100 is shown according to an embodiment of the present invention. Figure 1B Draw Figure 1A Side view.

[0048] like Figure 1A and Figure 1B As shown, in one or more embodiments of the present invention, the light-emitting device 100 includes a light-emitting element 200 and a super-interface 300. The light-emitting element 200 includes a light-emitting side 210. The super-interface 300 is disposed on the light-emitting side of the light-emitting element 200. For the purpose of simplicity, some components of the light-emitting element 200 and the super-interface 300 are not shown. Figure 1A and Figure 1B Above. For the specific structure of the Hyper-Interface 300, please refer to the subsequent discussion.

[0049] exist Figure 1B In this configuration, the light-emitting element 200 emits light from the light-emitting side 210, and the light-emitting element 200 emits light L along the Z direction of the stacked structure of the light-emitting element 200 and the metasurface 300. In some embodiments, the light-emitting element 200 includes a vertical-cavity surface-emitting laser (VCSEL), a photonic-crystal surface-emitting laser (PCSEL), or a resonant cavity light-emitting diode (RCLED). Generally, the light-emitting element 200 may include a multi-layered epitaxial structure, and the layer at the light-emitting side 210 of the light-emitting element 200 may be a dielectric material.

[0050] like Figure 1A and Figure 1B As shown, in one or more embodiments of the present invention, the metasurface 300 includes a transparent substrate 310. The metasurface 300 may have a plurality of meta atoms disposed on the substrate 310, as will be described later.

[0051] Please refer to Figure 1C . Figure 1C A side view of the light-emitting device 100 is shown. The substrate 310 of the meta-interface 300 can be heterogeneously bonded to the light-emitting side 210 of the light-emitting element 200. The layer where the light-emitting side 210 of the light-emitting element 200 is located can be a dielectric material. In this way, the substrate 310 of the meta-interface 300 can be made of an appropriate material to improve the light emission efficiency of the finally integrated light-emitting device 100.

[0052] For example, in some embodiments, the metasurface 300 and the light-emitting element 200 are bonded at the interface using an adhesive method. If the dielectric material layer at the light-emitting side 210 of the light-emitting element 200 is a dielectric material with a refractive index n1, then a dielectric material with a refractive index n2 can be selected to fabricate the metasurface 300. For example, a dielectric material with a refractive index n2 can be used to fabricate the substrate 310 of the metasurface 300. Thus, when the light L emitted by the light-emitting element 200 is incident perpendicularly to the metasurface 300 along the Z direction, the reflectivity R at the interface between the light-emitting element 200 and the metasurface 300 can be expressed as the following relationship (1):

[0053]

[0054] Thus, in some embodiments, the metasurface 300 may be made of a dielectric material with a refractive index n2 close to that of the refractive index n1, thereby reducing the reflectivity R and improving the overall light extraction efficiency. In some embodiments, the substrate 310 of the metasurface 300 may be made of a dielectric material.

[0055] In some implementations, before bonding the meta-interface 300 and the light-emitting element 200, the yield of both the light-emitting element 200 and the meta-interface 300 can be tested separately to prevent defects in either from affecting the light emission efficiency of the finally integrated light-emitting device 100. For example, testing the light-emitting element 200 can confirm its light-emitting power consumption or perform a stress test. Testing the meta-interface 300 can, for example, confirm the transmittance of the meta-interface 300 relative to the light-emitting wavelength of the light-emitting element 200, and whether the designed meta-interface function meets expectations.

[0056] To further explain the Super Interface 300, please refer to... Figure 2A and Figure 2B . Figure 2A A schematic perspective view of an overlay interface 300 is shown according to one embodiment of the present invention. Figure 2B Draw Figure 2A Top view.

[0057] Figure 2A and Figure 2B A partial view of the Hyper-Interface 300 is shown. Figure 2AIn this context, the meta-interface 300 includes multiple unit cells 330 arranged in a hexagonal lattice, and each unit cell 330 has a substrate 310 and meta-atom pillars 330A disposed on the substrate 310. For example... Figure 2A As shown, the metaparticle pillar 330A has a height h in the Z direction relative to the top surface of the substrate 310. In one or more embodiments of the present invention, each metaparticle pillar 330A has the same height h in the Z direction.

[0058] By arranging the super-intelligence atoms 330A in a hexagonal lattice, the super-intelligence atom pillars 330A in the unit cell 330 can conform to the principle of closest planar packing, thus providing a higher density of super-intelligence atom pillars 330A arrangement per unit area of ​​the super-intelligence interface 300, and improving the tunability of the optical properties of the super-intelligence interface 300. For details regarding the tunability of the optical properties of the super-intelligence interface 300, please refer to the subsequent discussion.

[0059] Although Figure 2A The diagram illustrates unit cells 330 divided by a hexagonal lattice arrangement. In one or more embodiments of the present invention, the substrates 310 of the unit cells 330 are substantially connected together. In other words, in some embodiments of the present invention, when forming the meta-interface 300, a single layer of substrate 310 covering multiple unit cells 330 can be formed first, followed by the formation of multiple meta-pillars 330A arranged on the substrate 310, and multiple hexagonal unit cells 330 can be divided according to the arrangement of the meta-pillars 330A, and there are no substantial boundaries on the substrate 310.

[0060] Figure 2B draw Figure 2A A top view. In one or more embodiments of the invention, a supercell period length Λ in the X direction can be defined. Thus, along the X direction, multiple sets of supercells 320 from multiple unit cells 330 can be defined with a supercell period length Λ, and these supercells 320 have translational symmetry of the supercell period length Λ in the X direction. In other words, multiple sets of substantially identical supercells 320 can be defined with a supercell period length Λ in the X direction. Figure 2B For example, in an exemplary embodiment of the present invention, four substantially identical supercells 320 are defined. For clarity, the edges of the supercells 320 are indicated by thick lines.

[0061] Simultaneously refer to Figure 2A and Figure 2B In this embodiment, the unit cell 330 has a regular hexagonal shape in the XY plane. Each regular hexagonal unit cell 330 has a side length l, and each unit cell 330 has a unit cell length p in the X direction.

[0062] To further illustrate the specific structure of the unit cell 330, please refer to... Figure 3A and Figure 3B . Figure 3A A schematic perspective view of the unit cell 330 of the superinterface 300 is shown according to one embodiment of the present invention. Figure 3B Draw Figure 3A Top view.

[0063] like Figure 3A As shown, in this embodiment, one of the unit crystals 330 includes a substrate 310 and a meta-atom pillar 330A. As previously mentioned, in some embodiments, the substrate 310 may be a transparent dielectric material, and the substrate 310 may be selected according to the material of the light-emitting side 210 of the light-emitting element 200 to reduce the reflectivity occurring at the interface between the meta-interface 300 and the light-emitting element 200.

[0064] Simultaneously refer to Figures 2A to 3B In an exemplary embodiment of the present invention, these supercells 320 each have a supercell period length Λ in the X direction, and each of these supercells 320 has six unit cells 330. Furthermore, although in Figure 2B In this embodiment, each supercell 320 includes six unit cells 330, but in other embodiments, each supercell 320 may include more than six or less than six unit cells 330.

[0065] In this embodiment, the super-advanced atomic column 330A is a square column. For example... Figure 3B As shown, viewed from the top of the metaparticle pillar 330A towards the XY plane, the shape of the metaparticle pillar 330A is square. The metaparticle pillar 330A is located at the center of the hexagonal unit cell 330. Figure 3B In the figure, the unit cell 330 has a unit cell length p in the X direction, and the metaparticle pillar 330A has a width W in the X direction. The width W of the metaparticle pillar 330A will be limited by the side length l and the unit cell length p of the hexagonal unit cell 330.

[0066] For example, such as Figure 3B As shown, the superstructure 330A is at most an inscribed square within the hexagonal unit cell 330; otherwise, the superstructure 330A would exceed the range of a single unit cell 330. In some embodiments of the present invention, the unit cell length p of the hexagonal unit cell 330 is, for example, 330 nm, corresponding to a width w of the superstructure 330A of at most approximately 230 nm.

[0067] The width W of the superatomic column 330A will affect the phase compensation value per unit cell 330. Generally speaking, as Figure 1BAs shown, the light-emitting element 200 emits light L along the Z direction, and the light L passes through the substrate 310 and enters the metasurface 300. (Back to...) Figure 3A The light ray L will pass through the meta-atom pillar 330A. The meta-atom pillar 330A can be considered a waveguide. As the light ray L travels different optical paths through the meta-atom pillar 330A, it has different effects on the light ray L, causing different phase delays. By adjusting the width of the meta-atom pillar 330A, the phase compensation value of the meta-interface 300 on the light ray L in different local areas can be controlled.

[0068] In addition, such as Figure 3A As shown, in this embodiment, the metaparticle column 330A has a height h in the Z direction. In some embodiments, the height h of the metaparticle column 330A affects the phase compensation value provided to the ray L.

[0069] In an exemplary embodiment of the present invention, the superstructures 330A at the superstructure interface 300 have the same height h. In this way, the phase compensation value that a unit cell 330 can provide can be changed by adjusting the width w of the cubic superstructure 330A.

[0070] In some embodiments of the present invention, the height h of the superatom column 330A is 800 nm. It should be noted that this is merely one embodiment of the present invention and should not be construed as limiting the scope of the invention unduly.

[0071] In some embodiments, the material of the superatom column 330A includes a metallic material. In some embodiments, the metallic material of the superatom column 330A can be selected to respond to visible light and near- and mid-infrared light L.

[0072] Please refer to Figure 4 . Figure 4 An illustration according to an embodiment of the present invention Figure 3A The graph shows the relationship between the width of the superstructure pillars 330A in the unit cell 330 and the relative transmittance versus the phase compensation value. In an exemplary embodiment of the present invention, the superstructure pillars 330A are cubic pillars with a height h of 800 nm. In this case, as an illustrative embodiment, when a light ray L with a selected emission wavelength of 940 nm passes through the unit cell 330 including the superstructure pillars 330A, the transmittance (or light transmittance) of the light ray L at different widths w is as follows: Figure 4 As shown.

[0073] In an exemplary embodiment of the present invention, the unit cell 330 is a regular hexagon and has a unit cell length p of 330 nm. For example... Figure 4As shown, the horizontal axis represents the different widths w of the superstructure 330A, in nm; the left vertical axis represents the transmittance, in percentage (%); and the right vertical axis represents the phase compensation value provided by a unit cell 330, in degrees. Curve CT1 is the curve showing the relationship between different widths w of the superstructure 330A per unit cell and the corresponding transmittance, with its value corresponding to the left vertical axis; curve CPC1 is the curve showing the relationship between different widths w of the superstructure 330A per unit cell and the phase compensation value, with its value corresponding to the right vertical axis.

[0074] In this way, from Figure 4 From the CPC1 curve, in a regular hexagonal unit cell 330 with a unit cell length p of 330 nm, using superatomic pillars 330A with widths w ranging from 100 nm to close to 230 nm, the phase compensation values ​​generated by the unit cell 330 can cover 0 degrees to over 360 degrees. The superatomic pillar 330A with a width w of 100 nm serves as the reference for a phase compensation value of 0. In this paper, a phase compensation value of 0 means that the light ray L entering the superatomic pillar 330A has the same phase as the light ray L leaving the superatomic pillar 330A.

[0075] In this embodiment, since the width w of the metaatomic column 330A is limited by the unit cell length p, when the unit cell length p is 330 nm, the maximum value of the width w can be 230 nm. This limits the phase compensation value that the unit cell 330 can provide. Figure 4 As illustrated, with the width w of the superatom column 330A approaching 230 nm, the upper limit of the phase compensation value that a unit cell 330 can provide is approximately 481.5 degrees.

[0076] On the other hand, from Figure 4 As seen in curve CT1, in a regular hexagonal unit cell 330 with a unit cell length p of 330 nm, a larger superstructure 330A does not necessarily mean a higher transmittance. For example, when the width w of the superstructure 330A is close to 140 nm and close to 180 nm, the transmittance of the unit cell 330 exhibits local peaks.

[0077] Given this, since the selection of the phase compensation value has a certain degree of freedom, the overall light emission efficiency of the light-emitting device 100 integrating the super-interface 300 can be improved by designing the width w of the super-atom pillars 330A in each different unit cell 330 of the super-interface 300.

[0078] In some implementations... Figure 4This can be achieved through computer simulation. For example, given a specific material and geometry, a physical model of the unit cell 330, including the substrate 310 and the meta-atom pillars 330A, can be created using a computer. By setting the light ray L with the emitted wavelength and adjusting the width w of the meta-atom pillars 330A, the following can be calculated: Figure 4 The diagram illustrates the relationships. In some implementations, calculations and simulations can be performed for factors such as the wavelength of light L, the height of the metamaterial column 330A, or the unit cell length p of the unit cell 330, etc., to establish a database. This facilitates the rapid extraction of similar data when designing different metamaterial interfaces 300. Figure 4 The relationship diagram.

[0079] Please refer to Figure 5A and Figure 5B . Figure 5A A schematic perspective view of a unit cell 330' of a superstructure is shown according to an embodiment of the present invention. Figure 5B Draw Figure 5A Top view.

[0080] It should be noted that, for the purpose of simplicity, Figure 5A and Figure 5B Applications similar to Figure 3A and Figure 3B The labels are used to represent similar components.

[0081] In some exemplary embodiments of the present invention, a cylinder can be selected as the superatomic column. Please refer to [reference needed] for details. Figure 5A and Figure 5B The example unit cell shown is 330'. Different from... Figure 3A , Figure 5A The illustrated hexagonal unit cell 330' has superstructures 330A', which are cylinders disposed at the center of the hexagonal unit cell 330'. In some embodiments of the present invention, the superstructures 330A' are disposed on a substrate 310. As previously mentioned, the substrate 310 may be a material used to reduce the reflectivity of the interface with the light-emitting element 200.

[0082] In some embodiments of the present invention, similar to Figure 3A and Figure 3B The settings, in Figure 5A and Figure 5B In this context, the unit cell 330 is a regular hexagon with side length l, and the unit cell 330' has a unit cell length p in the X direction. The unit cell length p of the unit cell 330' is, for example, 330 nm. Furthermore, in... Figure 5A In this embodiment, the superatom column 330A' has a height h in the Z direction. In some embodiments, the height h of the superatom column 330A' is, for example, 800 nm.

[0083] like Figure 5A and Figure 5B As shown, the metaparticle pillar 330A' has a width w' in the X direction. Since the metaparticle pillar 330A' is located at the center of the regular hexagonal unit cell 330', the width w' of the metaparticle pillar 330A' corresponds to the diameter of the metaparticle pillar 330A'. Similar to the aforementioned metaparticle pillar 330A, the width w' of the metaparticle pillar 330A' is also limited by the unit cell length p of the unit cell 330'. Specifically, provided that the metaparticle pillar 330A' does not exceed the range of the unit cell 330', the metaparticle pillar 330A' is at most one of the largest inscribed circles of the regular hexagonal unit cell 330'. For example, when the unit cell length p of the unit cell 330' is 330 nm, the width w' of the metaparticle pillar 330A' is at most 330 nm; otherwise, it will exceed the range of the unit cell 330'.

[0084] Please continue reading. Figure 6 . Figure 6 An illustration according to an embodiment of the present invention Figure 5A A graph showing the relationship between the width of the superatom pillar 330A' in the middle unit cell 330' and the phase compensation value.

[0085] exist Figure 6 In an exemplary embodiment, the unit cell length p of unit cell 330' is 330 nm, and the metaatomic column 330A' is cylindrical with a height h of 800 nm. As an illustrative embodiment, when a light ray L with an emission wavelength of 940 nm passes through unit cell 330', Figure 6 The diagram illustrates the transmittance of a unit cell 330' relative to light L and the phase compensation value that can be provided when the superatom pillar 330A' is adjusted to have different widths w'.

[0086] Similar to Figure 4 ,exist Figure 6 In the diagram, the horizontal axis represents the different widths w' of the superstructure 330A', in nm; the left vertical axis represents the transmittance of light L, in percentage (%); and the right vertical axis represents the phase compensation value provided by a unit cell 330', in degrees. Curve CT2 is the curve showing the relationship between different widths w of the superstructure 330A' per unit cell and the corresponding transmittance, with its value corresponding to the left vertical axis; curve CPC2 is the curve showing the relationship between different widths w' of the superstructure 330A' per unit cell and the phase compensation value, with its value corresponding to the right vertical axis.

[0087] In this way, from Figure 6From the CPC2 curve, when the width w' of the cylindrical metaatom column 330A' is in the range of 100 nm to close to 230 nm, the phase compensation value generated by the unit cell 330' can cover 0 degrees to more than 360 degrees, with the metaatom column 330A with a width w of 100 nm serving as the reference for a phase compensation value of 0. Furthermore, the metaatom column 330A' exhibits transmittance peaks when the width w' is close to 160 nm and close to 200 nm.

[0088] In some implementations, similar to the foregoing Figure 4 The explanation, Figure 6 This can be achieved through computer simulation. For example, given a specific material and geometry, a physical model of the unit cell 330', including the substrate 310 and the meta-atom pillars 330A', can be created using a computer. By setting the light ray L with the emitted wavelength and adjusting the width w' of the meta-atom pillars 330A', the following can be calculated: Figure 6 The diagram illustrates the relationships. In some implementations, calculations and simulations can be performed for factors such as the light wavelength L, the height of the metamaterial column 330A', or the unit cell length p of the unit cell 330', etc., to establish a database. This facilitates the rapid extraction of similar data when designing different metamaterial interfaces 300. Figure 6 Relationship diagram.

[0089] In some embodiments of the present invention, it can be achieved through Figure 3A The unit cell 330 is formed by having a tetragonal prism superatom 330A. Figure 2A The super-interface 300 is shown. In some embodiments of the present invention, it can be... Figure 2A The unit cell 330 of the 300 interface of the Chinese Super League was replaced with Figure 5A The unit cell 330' in the text means that it can also be obtained through, for example... Figure 5A The super-interface 300 is formed by the unit cell 330', provided that the formed super-interface 300 can satisfy translational symmetry along the supercell period length Λ in the X direction.

[0090] To further illustrate the composition of the exemplary super-interface 300 of the present invention, please refer to [link to previous text]. Figure 2A And at the same time refer to Figure 7A and Figure 7B . Figure 7A A schematic perspective view of a supercell 320 of a superinterface 300 is shown according to an embodiment of the present invention. Figure 7B Draw Figure 7A Top view.

[0091] In this embodiment, such as Figure 2AAs shown, the superinterface 300 can be formed by periodically arranging multiple supercells 320. A supercell 320 can be included within a periodic length Λ in the X direction. For the specific composition of the supercell 320, please refer to [reference needed]. Figure 7A .

[0092] like Figure 7A and Figure 7B As shown, in this embodiment, the supercell 320 includes unit cells 331, 332, 333, 334, 335, and 336, wherein unit cells 331, 332, 333, 334, 335, and 336 respectively include super-influential atomic pillars 331A, 332A, 333A, 334A, 335A, and 336A with the same height h.

[0093] Furthermore, according to one or more embodiments of the present invention, such as Figure 7B As shown, super-inverted atomic pillars 331A, 332A, 333A, 334A, 335A, and 336A are cubic pillars. Super-inverted atomic pillar 331A has a width W1, super-inverted atomic pillar 332A has a width W2, super-inverted atomic pillar 333A has a width W3, super-inverted atomic pillar 334A has a width W4, super-inverted atomic pillar 335A has a width W5, and super-inverted atomic pillar 336A has a width W6. In this embodiment, within the supercell 320, superatom pillars 331A, 332A, 333A, 334A, 335A, and 336A can be provided with different widths W1, W2, W3, W4, W5, and W6, respectively, thereby controlling the emission of light L from the light-emitting element 200.

[0094] For details, please refer to Figure 8 and Figure 9 . Figure 8 and Figure 9 Plot the modulation respectively Figure 7B A top-view schematic diagram of the width of the Zhongchao Ying atomic column. Figure 8 and Figure 9 In the embodiment, the widths W1, W2, W3, W4, W5 and W6 along the X direction are increased in sequence, which will cause the light L to be deflected in the X direction.

[0095] Please go back first. Figure 4 .exist Figure 4It can be seen that in a unit cell 330 with a tetragonal superstructure 330A, by fixing the superstructure 330A, the phase compensation value provided by the corresponding unit cell 330 can be controlled by adjusting the width w of the superstructure 330A. Furthermore, as the width w increases, the phase compensation value provided by the unit cell 330 also increases, showing a positive correlation between width w and phase compensation value.

[0096] Therefore, return Figure 8 .exist Figure 8 In the supercell 320 of the superinterface 300, the widths W1, W2, W3, W4, W5, and W6 increase sequentially along the X-direction. Therefore, the phase compensation values ​​provided by unit cells 331, 332, 333, 334, 335, and 336 also increase along the X-direction. Consequently, when ray L passes through the supercell 320 of the superinterface 300, ray L receives the minimum phase compensation value and the least delay in unit cell 331; ray L receives the maximum phase compensation value and the greatest delay in unit cell 336, causing ray L to ultimately deflect in the X-direction.

[0097] In some implementations, the deflection angle θ of the light ray L relative to the Z direction toward the X direction can be expressed as the following relationship (2):

[0098]

[0099] In equation (2), λ is the wavelength of light emitted by the light ray L; and Λ is the supercell period length Λ of the superinterface 300.

[0100] For the phase compensation values ​​provided by unit cells 331, 332, 333, 334, 335 and 336 in a single supercell, they can be expressed as the following relationship (3):

[0101]

[0102] Where x is the position of the unit cell in the x-direction, Φ g (x) represents the phase compensation value required at different positions x in the supercell 320, δ g This is an adjustable phase degree of freedom, with different labels for g corresponding to different values ​​for δ. g .

[0103] In this embodiment, unit cells 331, 332, 333, 334, 335, and 336 are arranged in a hexagonal lattice configuration. Therefore, superatomic pillars 331A, 332A, 333A, 334A, 335A, and 336A are arranged sequentially at equal intervals along the X-direction. The unit cell length p is equal to one-third of the supercell period length Λ. Thus, if we set the position of superstructure 331A to x=0, then the position of superstructure 332A is x=Λ / 6, the position of superstructure 333A is x=2Λ / 6, the position of superstructure 334A is x=4Λ / 6, the position of superstructure 335A is x=5Λ / 6, and the position of superstructure 336A is x=6Λ / 6=Λ. For example, the two superstructures 331A and 332A that are closest in the X direction are Λ / 6=p / 2 apart in the X direction.

[0104] Substituting the above positional information into relation (3), we can obtain that the unit cell 331 has a phase compensation value of 0 degrees + δ. g The unit cell 332 has a phase compensation value of 60 degrees + δ. g The unit cell 333 has a phase compensation value of 120 degrees + δ. g The unit cell 334 has a phase compensation value of 180 degrees + δ. g The unit cell 335 has a phase compensation value of 240 degrees + δ. g The unit cell 336 has a phase compensation value of 300 degrees + δ. g Degree. Based on the determined phase compensation values ​​for unit cells 331, 332, 333, 334, 335, and 336, different phase compensation values ​​can be determined by querying... Figure 4 The curve CPC1 of the width w of the square prism meta-atom column 330A versus the phase compensation value directly yields the required widths W1, W2, W3, W4, W5, and W6 for meta-atom columns 331A, 332A, 333A, 334A, 335A, and 336A, respectively.

[0105] As previously mentioned, the upper limit of the maximum phase compensation value that unit cells 331, 332, 333, 334, 335, and 336 can provide essentially depends on the unit cell length p. Considering that the superpillar 336A of unit cell 336 has the longest width W6 compared to other superpillars in supercell 320 (e.g., superpillars 331A, 332A, 333A, 334A, and 335A), the phase compensation value that unit cell 336 can provide is also the largest in supercell 320. Referring to the foregoing... Figure 4 As can be seen from the description, the width W6 of the unit cell 336 can be close to 230 nm, making the phase compensation value of the unit cell 336 300 degrees + δ g The maximum degree can approach 481.5 degrees. Therefore, δ g The range can be between 0 degrees and 180 degrees.

[0106] From another perspective, when considering the phase compensation values ​​that unit cells 331, 332, 333, 334, 335, and 336 can provide, unit cell 331 has a phase compensation value of δ. g The degree, and the phase compensation value δ relative to the unit cell 331. g The unit cells 332, 333, 334, 335, and 336 each have a phase compensation value of 60 degrees + δ. g degrees, 120 degrees + δ g degrees, 180 degrees + δ g degrees, 240 degrees + δ g degrees and 300 degrees + δ g Therefore, when designing the supercell 320, the position of the unit cell 331 can be set first, and the phase compensation value δ of the unit cell 331 can be selected. g The unit cells 332, 333, 334, 335, and 336, whose phase compensation values ​​increase arithmetically along the X direction, are then arranged sequentially. Unit cells 332, 333, 334, 335, and 336 can be considered as subordinate unit cells set relative to unit cell 331.

[0107] In this way, by adjusting the phase compensation value of unit cell 331, the phase compensation values ​​of unit cells 332, 333, 334, 335, and 336 can be adjusted accordingly. It should be noted that adjusting unit cells 331, 332, 333, 334, 335, and 336 corresponds to adjusting the widths W1, W2, W3, W4, W5, and W6 of the superstructures 331A, 332A, 333A, 334A, 335A, and 336A, respectively.

[0108] In addition, such as Figure 4 As shown, since the width w of the metaatomic column 330A is not positively correlated with the transmittance of light L, the phase compensation value δ of the unit cell 331 can be adjusted. g The phase compensation values ​​of unit cells 332, 333, 334, 335 and 336 are generated accordingly, which can simulate the transmittance of the super-interface 300 relative to the light L, so that the super-interface 300 has a transmittance peak relative to the light L, thereby improving the light emission efficiency of the integrated light-emitting device 100.

[0109] Back Figure 8 and Figure 9 . Figure 8 and Figure 9 The diagrams show unit cells 331 with different phase compensation values ​​δ. g Two embodiments of the degree.

[0110] exist Figure 8 In the illustrated supercell 320', g=0, and the unit cell 331 provides a phase compensation value of δ0 degrees = 0 degrees. At this time, referencing... Figure 4 The curve CPC1 has a width W1 of 100 nm for unit cell 331. Relative to unit cell 331, unit cell 332 has a phase compensation value of 60° + δ0° = 60°, unit cell 333 has a phase compensation value of 120° + δ0° = 120°, unit cell 334 has a phase compensation value of 180° + δ0° = 180°, unit cell 335 has a phase compensation value of 240° + δ0° = 240°, and unit cell 336 has a phase compensation value of 300° + δ0° = 300°. Based on the determined phase compensation values ​​for unit cells 332, 333, 334, 335, and 336, the widths W2, W3, W4, W5, and W6 of the super-pillars 332A, 333A, 334A, 335A, and 336A can be determined by... Figure 4The curve CPC1 was obtained.

[0111] Thus, in Figure 8 Under these conditions, transmittance simulations can be performed on the ultra-interface at a relative light wavelength of 300 L. See below for details. Figure 10 .

[0112] On the other hand, Figure 9 In the illustrated supercell 320'', g>0, and the corresponding unit cell 331 provides a phase compensation value of δ. g Degrees > 0 degrees. At this time, refer to... Figure 4 The curve CPC1 shows that the width W1 of unit cell 331 is greater than 100 nm, but the width W6 of unit cell 336 is less than 230 nm. Figure 9 In the middle, g=59, δ 59 Taking 59 degrees as an example, the unit cell 331 provides a phase compensation value of δ. 59 The phase compensation is 59 degrees. Compared to unit cell 331, unit cell 332 has a phase compensation value of 60 degrees + δ. 59 The degree is 119 degrees, and the unit cell 333 has a phase compensation value of 120 degrees + δ. 59 The degree is 179 degrees, and the unit cell 334 has a phase compensation value of 180 degrees + δ. 59 The degree is 239 degrees, and the unit cell 335 has a phase compensation value of 240 degrees + δ. 59 The degree is 299 degrees, and the unit cell is 336 with a phase compensation value of 300 degrees + δ. 59 The degree is 359 degrees. Based on the determined phase compensation values ​​for unit cells 331, 332, 333, 334, 335, and 336, the widths W1, W2, W3, W4, W5, and W6 of the superstructure prism 331A, 332A, 333A, 334A, 335A, and 336A can be determined by... Figure 4 The curve CPC1 was obtained.

[0113] In one or more embodiments of the present invention, δ can be adjusted. g The simulation is performed once every degree interval. In this embodiment, g can be set to 181 integers, from 0 to 180, so that each unit cell 331 has a phase compensation value δ. g =0 degrees, 1 degree, 2 degrees..., 180 degrees. The maximum phase compensation value of the unit cell 331 depends on the upper limit of the maximum width W6 that the superatom pillar 336A of the unit cell 336 that can provide the maximum phase compensation value in the supercell 320 can have.

[0114] In this way, various different meta-interface 300 states can be generated quickly and efficiently. These meta-interface 300 states are equivalent and can all cause light rays L to be deflected by an angle θ.

[0115] In addition, as mentioned above Figure 4 As shown, transmittance is not necessarily proportional to the width w of the meta-atom column 330A. After generating multiple equivalent states of the meta-interface 300, transmittance simulations relative to the light L can be performed on each of these states, thereby selecting the state with the highest transmittance to form the meta-interface 300, and systematically maximizing the light emission efficiency of the integrated light-emitting device 100.

[0116] Please refer to Figure 10 . Figure 10 According to an embodiment of the present invention, a first phase compensation value δ is illustrated in the first unit cell 331 of the supercell 320 of the modulation superinterface 300. g A graph showing the relationship between transmittance and transmittance. Figure 10 In the illustrated example implementation, the wavelength of the selected light ray L is 940 nm.

[0117] exist Figure 10 The horizontal axis represents the phase compensation value δ per unit cell 331. g The vertical axis represents the transmittance of the formed meta-interface 300 relative to ray L. Curve CTM corresponds to the transmittance of ray L in the transverse magnetic wave mode (TM mode), curve CTE corresponds to the transmittance of ray L in the transverse electromagnetic wave mode (TE mode), and curve CA represents the average transmittance of ray L in the average TM and TE modes. Based on curve CA, the phase compensation value δ in unit cell 331 is... g With a degree of 0 (corresponding to a width W1 of 100 nm for the metatom column 331A), the transmittance of the metatom interface 300 relative to light L is not at its peak. However, at the first phase compensation value δ of the unit cell 331... g At angles between 20 and 40 degrees, or between 100 and 120 degrees, the transmittance of the super-interface 300 relative to light L is a local peak. (Also referencing...) Figure 4 It can be seen that the width W1 of the superatom column 331A is greater than 100 nm at this time.

[0118] In one or more embodiments of the present invention, an ultra-interface 300 having a transmittance peak relative to the light L may be integrated onto the light-emitting element 200 to form an integrated light-emitting device.

[0119] Please refer to Figure 11A and Figure 11B . Figure 11A A schematic diagram illustrating the propagation of ray L in the TM mode along the electric field EF. Figure 11BDraw a schematic diagram of the ray L and electric field EF of the TM mode in the XZ plane. Based on... Figure 11A and Figure 11B It can simulate the transmittance of light L relative to the TM mode of the super-interface 300 at different incident angles.

[0120] Reference Figure 11A and Figure 11B A ray L is incident on the substrate 310 of the meta-interface 300 along the Z direction at an incident angle. The electric field EF of the ray L in the TM mode oscillates in the XZ plane.

[0121] Please refer to Figure 12A and Figure 12B . Figure 12A A schematic diagram illustrating the propagation of the ray L in the TE mode along the electric field EF. Figure 12B Draw a schematic diagram of the ray L of the TE mode and the electric field EF in the XZ plane. Based on... Figure 12A and Figure 12B It can simulate the transmittance of light L relative to the TE mode at different incident angles of the super-interface 300.

[0122] Reference Figure 12A and Figure 12B A ray L is incident on the substrate 310 of the meta-interface 300 along the Z direction at an incident angle. The electric field EF of the ray L in the TM mode oscillates perpendicularly through the XZ plane.

[0123] Figure 13 A graph illustrating the relationship between the transmittance of light ray L with different deflection angles θ relative to the TE and TM modes is shown according to one embodiment of the present invention. In this embodiment, a light ray L with an emission wavelength of 940 nm is taken as an example.

[0124] exist Figure 13 In the diagram, the horizontal axis represents the deflection angle θ, and the vertical axis represents the transmittance relative to the ray L. Figure 13 In this simulation, for a specific deflection angle θ, multiple equivalent metasurfaces 300 with different phase compensation values ​​can be simulated. Therefore, for each deflection angle θ, the metasurface 300 can simulate multiple different transmittances relative to the ray L. Clearly, when the phase retardation value of the unit cell 330 in the supercell 320 of the metasurface 300 can be modulated, metasurfaces 300 with different phase retardation values ​​will have different transmittances relative to the ray L. Based on... Figure 13 Based on the polarization distribution characteristics of light L, a super-interface 300 pattern with a suitable phase delay value can be selected.

[0125] Figure 14 A schematic top view of a supercell 350 of a superinterface is shown according to an embodiment of the present invention.

[0126] In another embodiment of the invention, a supercell interface can be formed by repeatedly arranging supercells 350 in the X direction. For the purpose of simplicity, similar elements are referred to by the same reference numerals.

[0127] exist Figure 14 In this case, the supercell 350 has a supercell period length Λ in the X direction. According to the aforementioned relationship (2), the superinterface formed by the supercell 350 is similar to the aforementioned Figure 8 Supercell 320' or Figure 9 The supercell 320'' formed by the supercell 320'' can deflect light L along the X direction by a deflection angle θ.

[0128] In this embodiment, the supercell 350 includes unit cells 351, 352, 353, 354, 355, 356, 357, and 358. Unit cell 351 has a super-information atom pillar 351A with a width of W1, unit cell 352 has a super-information atom pillar 352A with a width of W2, unit cell 353 has a super-information atom pillar 353A with a width of W3, unit cell 354 has a super-information atom pillar 354A with a width of W4, unit cell 355 has a super-information atom pillar 355A with a width of W5, unit cell 356 has a super-information atom pillar 356A with a width of W6, unit cell 357 has a super-information atom pillar 357A with a width of W7, and unit cell 358 has a super-information atom pillar 358A with a width of W8. Super-inverted atomic columns 351A, 352A, 353A, 354A, 355A, 356A, 357A, and 358A have the same height.

[0129] At this point, if we define the center of the superatom column 351A as position x=0, then the phase compensation values ​​provided by unit cells 351, 352, 353, 354, 355, 356, 357, and 358 respectively must satisfy the relation (3), and according to... Figure 4 The CPC1 curve determines the width of each superatom pillar in supercell 350 based on the phase compensation value.

[0130] In some embodiments of the present invention, unit cells 351, 352, 353, 354, 355, 356, 357, and 358 may each have phase compensation values ​​of 0 degrees, 45 degrees, 90 degrees, 135 degrees, 180 degrees, 225 degrees, 270 degrees, and 315 degrees, respectively. In some embodiments, unit cells 351, 352, 353, 354, 355, 356, 357, and 358 may each have a phase compensation value of 0 degrees + δ. g degrees, 45 degrees + δ g degrees, 90 degrees + δ g degrees, 135 degrees + δ g degrees, 180 degrees + δ g degrees, 225 degrees + δ g degrees, 270 degrees + δ g degrees, 315 degrees + δ g The phase compensation value is 315 degrees + δ for a unit cell of 358. g The degree is less than the upper limit of 481.5 degrees. This is achieved by adjusting δ. g This will enable the supercell 350 to form a superinterface with a transmittance peak relative to light of a specific emission wavelength.

[0131] To illustrate a specific manufacturing process of the light-emitting device 100 of the present invention, please refer to... Figure 15 . Figure 15 A flowchart illustrating a method for manufacturing a light-emitting device 400 according to an embodiment of the present invention is shown. The manufacturing method 400 includes a simulation method 500 for simulating the super-interface 300 of the light-emitting device 100.

[0132] Simultaneously refer to Figure 1A and Figure 1B In process 401, a light-emitting element 200 is formed. The light-emitting element 200 has a light source and is able to emit light L in the Z direction from the light-emitting side 210 of the light-emitting element 200.

[0133] Following process 401, in process 402, the deflection direction (e.g., the X direction) and deflection angle θ of the ray L are determined.

[0134] Simultaneously refer to Figure 2A and Figure 2B In process 403, the supercell period length Λ of the superinterface 300 (e.g. in the X direction) is determined based on the deflection angle θ and the light emission wavelength of the light-emitting element 200.

[0135] Proceed to process 404 to establish a model of the super-interface 300. The model of the super-interface 300 includes multiple unit cells 330, each unit cell 330 having a super-atom pillar 330A, each super-atom pillar 330A corresponding to a phase compensation value, and the super-cell period length Λ of the super-interface 300 defines multiple super-cells 320 from the multiple unit cells 330, for example... Figure 2A and Figure 2B As shown.

[0136] In process 405, the phase compensation value of the unit cell 330 is adjusted and the light source with the wavelength is set to simulate the transmittance of the model of the super-interface 300 under different phase compensation value settings.

[0137] For example, Figure 2A Multiple supercells 320 can be constructed by establishing Figure 8 Supercell 320' or Figure 9 The supercell 320'' is replaced. Thus, by changing the widths W1, W2, W3, W4, W5, and W6 of the superpillars 331A, 332A, 333A, 334A, 335A, and 336A in unit cells 331, 332, 333, 334, 335A, and 336A, respectively, the phase compensation values ​​of unit cells 331, 332, 333, 334, 335, and 336 can be controlled. For specific settings, please refer to the aforementioned section on... Figure 8 and Figure 9 Explanation.

[0138] In one or more embodiments of the present invention, process 405 is executed by computer simulation.

[0139] Reference Figure 10 In process 406, the phase compensation value at the peak transmittance is selected as the process parameter of the super-interface 300.

[0140] Processes 402 to 406 can be considered as exemplary processes of the simulation method 500 for simulating the hyper-interface 300 of the present invention.

[0141] Following process 406, in process 407, the hyperface 300 is formed based on the simulation of the hyperface 300. The separately formed hyperface 300 and the light-emitting element 200 are as follows... Figure 1A and Figure 1B As shown.

[0142] In some embodiments of the present invention, before the substrate 310 of the super-interface 300 and the light-emitting side 210 of the light-emitting element 200 are heterogeneously bonded together, the manufacturing method 400 further includes a selective process 408 (shown in dashed lines) that can separately detect the yield of the super-interface 300 and the light-emitting element 200. For example, it can be detected whether the intensity of the light L emitted by the light-emitting element 200 meets the design, or whether the super-interface 300 has a transmittance that meets the simulation relative to the emission wavelength of the light L.

[0143] Simultaneously refer to Figure 1C In process 409, the super-interface 300 is placed on the light-emitting side 210 of the light-emitting element 200. In one or more embodiments of the present invention, the substrate 310 of the super-interface 300 can be heterogeneously bonded to the light-emitting side 210 of the light-emitting element 200.

[0144] In some exemplary embodiments, the meta-interface of the present invention can serve as a metalens. In this case, the phase compensation Φ of the designed meta-interface... c It can be expressed as the following relation (4):

[0145]

[0146] Where λ is the wavelength of the emitted light from the optical element, r is the position of the radius r-axis in the polar coordinate system of the element surface, and δ c Here, n is the phase reference value, and n is an integer. It can be seen that the phase compensation Φ... c It can also have the degree of freedom for phase adjustment (phase reference value δ) c Therefore, the overall light output efficiency can also be maximized by adjusting the phase compensation value of the unit cell 330 in the supercell 320 within the superinterface 300, similar to the method described above.

[0147] In summary, according to one or more embodiments of the present invention, the transmittance of light emitted by the light-emitting element of the integrated light-emitting device relative to the superinterface can be effectively improved by modulating the phase compensation value of each unit cell within the supercell in the superinterface. Furthermore, the material of the integration surface can be adjusted and designed accordingly for different light-emitting elements. The present invention can efficiently provide adjustments and designs corresponding to different emitted wavelengths. In addition, by heterogeneously bonding the light-emitting element and the superinterface, and by selecting appropriate materials to design the corresponding superinterface, the strong reflection phenomenon occurring at the heterogeneous integration interface can be mitigated, reducing the light-emitting energy loss of the light-emitting element and further improving the performance of the final integrated device.

[0148] Although the present invention has been described above with reference to embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the claims.

[0149] It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of embodiments of the present invention without departing from the scope or spirit of this disclosure. In view of the foregoing, the present invention is intended to cover modifications and variations thereof, provided they fall within the appended scope of protection.

[0150] [Symbol Explanation]

[0151] 100: Light-emitting device

[0152] 200: Light-emitting element

[0153] 210: Light-emitting side

[0154] 300: Super Smart Interface

[0155] 310: Substrate

[0156] 320,320',320'': Supercell

[0157] 330,330': unit cell

[0158] 330A, 330A': Super-inspired atomic column

[0159] 331~336: Unit cell

[0160] 331A, 332A, 333A, 334A, 335A, 336A: Super-intrinsic atomic columns

[0161] 350: Supercell

[0162] 351~358: Unit cell

[0163] 351A, 352A, 353A, 354A, 355A, 356A, 357A, 358A: Supercritical Atomic Columns

[0164] 400: Manufacturing Method

[0165] 401~409: Process

[0166] 500: Simulation Method

[0167] CA: Curve

[0168] CPC1, CPC2: Curves

[0169] CT1, CT2: Curves

[0170] CTM: Curve

[0171] CTE: Curve

[0172] EF: Electric field

[0173] L: Light

[0174] w, w', W1,W2,W3,W4,W5,W6,W7,W8: Width

[0175] X, Y, Z: Direction

[0176] h: height

[0177] l: Side length

[0178] p: Length per unit cell

[0179] Λ: Supercell period length.

Claims

1. A method of manufacturing a light emitting device, characterized by, comprising: forming a light emitting element; performing simulation of a superlens by an electronic computer, comprising: determining a deflection direction and a deflection angle; determining a supercell period length of the superlens in the deflection direction according to the deflection angle and an emission wavelength of the light emitting element; establishing a superlens model of the superlens, wherein the superlens model has a plurality of unit cells, a plurality of phase compensation values of the plurality of unit cells are periodically distributed in the deflection direction with the supercell period length; adjusting the phase compensation values of the plurality of unit cells and setting a light source of the emission wavelength to simulate a plurality of transmittances of the superlens model under different phase compensation values of the plurality of phase compensation values; and selecting the phase compensation values under a transmittance peak value of the plurality of transmittances as a plurality of process parameters of the superlens; forming the superlens based on the simulation; and placing the superlens on an emission side of the light emitting element.

2. The method of claim 1, wherein, The superlens formed further comprises a transparent substrate, a plurality of superlens atoms are formed on the transparent substrate, and placing the superlens on the emission side of the light emitting element comprises: heterogeneously bonding the transparent substrate of the superlens to the emission side of the light emitting element.

3. The method of any one of claims 1 to 2, wherein, The plurality of unit cells are periodically arranged in a hexagonal lattice.

4. The method of claim 1, wherein, The plurality of unit cells comprise a plurality of superlens atom columns, each of the unit cells comprises one of the plurality of superlens atom columns, the plurality of superlens atom columns comprise a plurality of square columns or a plurality of cylindrical columns with the same height, the plurality of superlens atom columns of the plurality of unit cells respectively generate the plurality of phase compensation values of the plurality of unit cells, and adjusting the phase compensation values of the plurality of unit cells comprises: adjusting a plurality of widths of the plurality of superlens atom columns.

5. The method of claim 1, wherein, When the simulation of the superlens is performed by the electronic computer, the supercell period length defines the same supercells from the plurality of unit cells of the superlens model, each of the supercells comprises: a first unit cell having a first phase compensation value; and a plurality of subordinate unit cells periodically arranged equidistantly along the deflection direction relative to the first unit cell, wherein the plurality of subordinate unit cells have a plurality of subordinate phase compensation values, the plurality of subordinate phase compensation values are increased equidifferentially along the deflection direction relative to the first phase compensation value, wherein adjusting the phase compensation values of the plurality of unit cells comprises: for each of the supercells, adjusting the first phase compensation value of the first unit cell, and causing the plurality of subordinate phase compensation values of the plurality of subordinate unit cells to be adjusted according to the first phase compensation value.

6. A method of manufacturing a light emitting device, characterized by, comprising: forming a light emitting element; forming a superlens, wherein the superlens has a plurality of unit cells, the plurality of unit cells comprise a plurality of superlens atom columns, each of the unit cells comprises one of the plurality of superlens atom columns, each of the superlens atom columns has a corresponding phase compensation value, the plurality of superlens atom columns have the same height and different widths, and have a supercell period length of the superlens in a deflection direction with periodicity, wherein the supercell period length is determined by a predetermined deflection angle and an emission wavelength of the light emitting element; setting a dielectric layer on an emission side of the light emitting element; and ​ bonding the superlens on the light-outgoing side of the light-emitting element, wherein the superlens is bonded on the dielectric layer, and the dielectric layer is selected to reduce reflectivity at the bonding interface between the superlens and the dielectric layer.

7. The method of claim 6, wherein, further comprising: detecting a transmittance of the superlens before bonding the superlens on the light-outgoing side of the light-emitting element.

8. A light-emitting device, characterized in that, comprising: a light-emitting element comprising a light-outgoing side and having a light-outgoing wavelength; and a superlens located on the light-outgoing side of the light-emitting element, wherein the superlens comprises a plurality of unit cells periodically arranged along a deflection direction with a supercell periodic length, the plurality of unit cells comprising a plurality of superlens atomic columns, the plurality of superlens atomic columns having a plurality of phase compensation values with respect to the light-outgoing wavelength respectively, each of the unit cells comprising one of the plurality of superlens atomic columns, each of the superlens atomic columns corresponding to one of the plurality of phase compensation values, wherein the supercell periodic length defines a same plurality of supercells from the plurality of unit cells, each of the supercells comprising: a first unit cell, wherein the first unit cell has a first superlens atomic column corresponding to a first phase compensation value; and a plurality of subordinate unit cells periodically arranged equidistantly along the deflection direction with respect to the first unit cell, wherein the plurality of subordinate unit cells have a plurality of subordinate phase compensation values, the plurality of subordinate phase compensation values increasing arithmetically along the deflection direction with respect to the first phase compensation value, any one of the plurality of subordinate phase compensation values and the first phase compensation value having a difference less than 360 degrees, wherein the first phase compensation value is set to make the superlens have a transmittance peak with respect to the light-outgoing wavelength.

9. The light emitting device of claim 8, wherein the first and second light emitting devices are arranged in a vertical stack. in each of the supercells, the first superlens atomic column of the first unit cell and the plurality of superlens atomic columns of the plurality of subordinate unit cells have a same height and different widths respectively.

10. The light emitting device of any of Claims 8 to 9, wherein, the superlens further comprises a transparent substrate, the plurality of superlens atomic columns of the plurality of unit cells are formed on the transparent substrate, and the transparent substrate is hetero-bonded to the light-outgoing side of the light-emitting element with respect to a side of the plurality of superlens atomic columns.

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