Quantum dot modified flexible visual synapse resistive memory and preparation method thereof

Abstract

This invention discloses a quantum dot-modified flexible visual synaptic memristor and its fabrication method. The quantum dot-modified flexible visual synaptic memristor includes: a flexible substrate; a bottom electrode formed on the flexible substrate; a composite functional film composed of perovskite quantum dots and an organic ferroelectric polymer, formed on the bottom electrode; and multiple mutually spaced transparent top electrodes formed on the composite functional film. By applying light source signals and electrical pulse signals to the device, and utilizing the photoelectric response of the perovskite quantum dots and the conductivity modulation function of the ferroelectric polymer, the device simulates the light signal perception, data storage, and computation of an artificial vision system.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, specifically to a quantum dot-modified flexible visual synaptic memristor and its fabrication method. Background Technology

[0002] Flexible electronic devices, characterized by their bendability, low cost, and portability, hold immense promise for applications in wearable healthcare, intelligent sensing, electronic computing, and energy batteries. In particular, biomimetic flexible electronics, as a crucial branch of this field, leverages the unique advantages of biological systems to address specific problems and needs encountered in real-world production and daily life, demonstrating significant application potential.

[0003] Humans acquire various forms of information from the environment and react adaptively, with 80% of this information originating from the visual system. To construct a biomimetic visual system, photoelectric sensors and storage / computing units are manufactured separately and connected via a digital-to-analog converter. While this approach can simulate the human visual system to some extent, its information processing efficiency is far lower than that of biological systems, hindering its widespread application. A solution utilizing a single device to achieve optical information sensing, in-situ information processing, and in-situ storage would significantly improve the efficiency of biomimetic visual systems, offering substantial advantages in real-time information capture and processing.

[0004] Ferroelectric memristors are a typical type of non-volatile memory that can undergo polarization reversal under voltage excitation, resulting in a change in resistance. They are well-suited for constructing neural synaptic devices. Ferroelectric neural synaptic devices can achieve in-situ storage and neuromorphic computing functions within the same device, improving device utilization and computing efficiency. However, both inorganic and organic ferroelectric layers are difficult to respond to optical signals, limiting their application in visual processing systems for optical information perception. Exploring combinatorial material systems to improve the photoelectric response performance of devices has become a new path for developing efficient visual systems. Summary of the Invention

[0005] This invention discloses a quantum dot-modified flexible visual synaptic memristor comprising: a flexible substrate; a bottom electrode formed on the flexible substrate; a composite functional film composed of perovskite quantum dots and organic ferroelectric polymers formed on the bottom electrode; and a plurality of mutually spaced transparent top electrodes formed on the composite functional film. The device is equipped with light source signals and electrical pulse signals, utilizing the photoelectric response of the perovskite quantum dots and the conductivity modulation function of the ferroelectric polymers to simulate the light signal perception, data storage, and computation of an artificial vision system.

[0006] In the flexible visual synaptic memristor of the present invention, the perovskite quantum dots are preferably CsPbBr3, CsPbI3, or CsPbCl3.

[0007] In the flexible visual synaptic memristor of the present invention, preferably, the organic ferroelectric polymer is P(VDF-TrFE).

[0008] In the flexible visual synaptic memristor of the present invention, the top electrode is preferably ITO, FTO, or ZTO.

[0009] This invention also discloses a method for fabricating a quantum dot-modified flexible visual synaptic memristor.

[0010] The method includes the following steps: forming a bottom electrode on a flexible substrate; forming a composite functional film on the bottom electrode, which is composed of perovskite quantum dots and organic ferroelectric polymer films; forming multiple mutually spaced transparent top electrodes on the composite functional film; applying light source signals and electrical pulse signals to the device; and using the photoelectric response of perovskite quantum dots and the conductivity modulation function of ferroelectric polymers to simulate the light signal perception, data storage and calculation of artificial vision systems.

[0011] In the method for preparing the quantum dot-modified flexible visual synaptic memristor of the present invention, the preferred step of forming the composite functional thin film specifically includes: coating a perovskite quantum dot solution and an organic ferroelectric polymer solution onto the bottom electrode using a spin coating method at a rotation speed of 2000 r / min to 5000 r / min and a spin coating time of 20 s to 120 s; and annealing the film at a hot plate at 60°C to 150°C for 30 minutes to 6 hours.

[0012] In the method for preparing a quantum dot-modified flexible visual synaptic memristor of the present invention, preferably, the ratio of the perovskite quantum dot solution to the organic ferroelectric polymer solution is 1:1.

[0013] In the method for preparing a quantum dot-modified flexible visual synaptic memristor of the present invention, the perovskite quantum dots are preferably CsPbBr3, CsPbI3, or CsPbCl3.

[0014] In the method for preparing the quantum dot-modified flexible visual synaptic memristor of the present invention, preferably, the organic ferroelectric polymer is P(VDF-TrFE).

[0015] In the method for fabricating a quantum dot-modified flexible visual synaptic memristor of the present invention, preferably, the top electrode is ITO, FTO, or ZTO.

[0016] Beneficial effects:

[0017] (1) By using electronic devices to simulate biological systems, engineering problems can be solved by leveraging the advantages of biological systems, and low-cost, efficient, and simple device fabrication schemes can be achieved. When simulating biological vision systems, devices can achieve in-situ acquisition, calculation, and memory of information, thereby improving the efficiency of bionic vision systems in information perception, processing, and storage, and reducing the system's energy consumption.

[0018] (2) By modifying organic ferroelectric polymers with perovskite quantum dots, the photoelectric response of the device is increased, which solves the drawback that organic ferroelectric polymers can only realize storage and computing. The device's functional layer design is used to realize the integration of light sensing function, thus expanding the application scenarios of the device.

[0019] (3) To meet the application needs of flexible electronics, organic materials and perovskite quantum dot materials with excellent flexibility were selected, which enabled the device to have high stability and durability in different bending application scenarios, avoiding the problems of cracks and leakage that exist in traditional oxide materials during bending. Attached Figure Description

[0020] Figure 1 This is a flowchart of a method for fabricating a flexible visual synaptic memristor modified with quantum dots.

[0021] Figures 2-4 This is a schematic diagram of the structure of each stage in the fabrication method of a quantum dot-modified flexible visual synaptic memristor.

[0022] Figure 5 This is a schematic diagram illustrating the operating principle of a quantum dot-modified flexible visual synaptic memristor. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only for explaining this invention and are not intended to limit this invention. The described embodiments are merely some embodiments of this invention, not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0024] In the description of this invention, it should be noted that the terms "upper," "lower," "vertical," and "horizontal," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0025] Furthermore, many specific details of the invention, such as the structure, materials, dimensions, processing techniques, and methods of the device, are described below to provide a clearer understanding of the invention. However, as those skilled in the art will understand, the invention may be implemented without adhering to these specific details. Unless specifically indicated below, various parts of the device may be made of materials known to those skilled in the art, or may employ materials with similar functionality developed in the future.

[0026] Figure 1 This is a flowchart illustrating the fabrication method of a quantum dot-modified flexible visual synaptic memristor. (Example:) Figure 1 As shown, the method for fabricating a quantum dot-modified flexible visual synaptic memristor includes the following steps:

[0027] Step S1: Prepare a flexible PET substrate 100 for fabricating a flexible visual synaptic memristor device modified with perovskite quantum dots. The flexible substrate can also be PI, PDMS, etc.

[0028] Step S2: A bottom electrode 101 with a thickness of 30 nm to 100 nm is fabricated on the substrate 100 using magnetron sputtering, such as... Figure 2 As shown. The material of the bottom electrode can be Pt, Au, Al, Ti, Ni, etc.

[0029] Step S3: Using spin coating, perovskite quantum dot solution and organic ferroelectric polymer solution are spread on the bottom electrode 101 at a volume ratio of 1:1. The spin coating speed is 2000 r / min to 5000 r / min, and the spin coating time is 20 s to 120 s. Subsequently, annealing is performed using a hot plate at 60℃ to 150℃ for 30 minutes to 6 hours to obtain a composite functional thin film 102 that simultaneously possesses ferroelectricity and photoelectric response. Figure 3 As shown. The perovskite quantum dot solution is preferably CsPbBr3, but can also be CsPbI3, CsPbCl3 inorganic perovskite quantum dots, etc.; the organic ferroelectric polymer is preferably P(VDF-TrFE).

[0030] Step S4: Multiple mutually spaced transparent top electrodes 103 with a thickness of 30nm to 100nm are fabricated using a hard mask and magnetron sputtering to complete the device fabrication. Figure 4 As shown. The material of the top electrode can be a transparent conductive film such as ITO, FTO, or ZTO.

[0031] like Figure 5As shown, light source signals and electrical pulse signals are applied to the device, and the photoelectric response of perovskite quantum dots and the conductivity modulation function of ferroelectric polymers are used to simulate the light signal perception and calculation of artificial vision systems. Furthermore, due to the polarization reversal characteristics of the device, signal storage can be achieved while completing information perception and calculation, thus constructing a flexible biomimetic visual neuromorphic computing system.

[0032] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention should be included within the scope of protection of the present invention.

Claims

1. A quantum dot-modified flexible visual synaptic memristor, characterized in that, include: Flexible substrate; The bottom electrode is formed on the flexible substrate; A composite functional thin film, composed of perovskite quantum dots and organic ferroelectric polymers, is formed on the bottom electrode; Multiple mutually spaced transparent top electrodes are formed on the composite functional film. By applying light source signals and electrical pulse signals to the device, and utilizing the photoelectric response of perovskite quantum dots and the conductivity modulation function of ferroelectric polymers, the light signal perception, data storage and computation of artificial vision systems are simulated.

2. The quantum dot-modified flexible visual synaptic memristor according to claim 1, characterized in that, The perovskite quantum dots are CsPbBr3, CsPbI3, or CsPbCl3.

3. The quantum dot-modified flexible visual synaptic memristor according to claim 1, characterized in that, The organic ferroelectric polymer is P(VDF-TrFE).

4. The quantum dot-modified flexible visual synaptic memristor according to claim 1, characterized in that, The top electrode is ITO, FTO, or ZTO.

5. A method for fabricating a quantum dot-modified flexible visual synaptic memristor, characterized in that, Includes the following steps: A bottom electrode is formed on a flexible substrate; A composite functional film is formed on the bottom electrode, which is composed of perovskite quantum dots and organic ferroelectric polymer film. Multiple mutually spaced transparent top electrode layers are formed on the composite functional film. By applying light source signals and electrical pulse signals to the device, and utilizing the photoelectric response of perovskite quantum dots and the conductivity modulation function of ferroelectric polymers, the light signal perception, data storage and computation of artificial vision systems are simulated.

6. The method for fabricating a quantum dot-modified flexible visual synaptic memristor according to claim 5, characterized in that, The steps for forming the composite functional thin film specifically include: Perovskite quantum dot solution and organic ferroelectric polymer solution were coated onto the bottom electrode using a spin coating method at a rotation speed of 2000 r / min to 5000 r / min and a spin coating time of 20 s to 120 s. Anneal at 60℃~150℃ for 30 minutes to 6 hours using a hot plate.

7. The method for fabricating a quantum dot-modified flexible visual synaptic memristor according to claim 6, characterized in that, The volume ratio of the perovskite quantum dot solution to the organic ferroelectric polymer solution is 1:

1.

8. The method for fabricating a quantum dot-modified flexible visual synaptic memristor according to claim 5, characterized in that, The perovskite quantum dots are CsPbBr3, CsPbI3, or CsPbCl3.

9. The method for fabricating a quantum dot-modified flexible visual synaptic memristor according to claim 5, characterized in that, The organic ferroelectric polymer is P(VDF-TrFE).

10. The method for fabricating a quantum dot-modified flexible visual synaptic memristor according to claim 5, characterized in that, The top electrode is ITO, FTO, or ZTO.

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