An isotope battery based on the beta radiation voltaic effect

Abstract

The present invention provides an isotope battery based on the beta radiation voltaic effect. According to the number of transducer units, it can be divided into single-layer isotope batteries, double-layer isotope batteries, triple-layer isotope batteries, and even extended to N-layer isotope batteries (including N transducer units and N-1 isotope sources, N ≥ 4). The multi-layer isotope battery stacked packaging structure is realized through ingenious design. The multi-layer isotope battery includes an insulating shell, an insulating limit fixture and a battery module. The battery module is placed in the insulating shell, and the limit fixtures are placed on both sides of the insulating shell. The purpose is to address the current situation of beta radiation voltaic effect isotope batteries with low energy conversion efficiency, small output current, low output power and mostly using low-energy isotope sources. For transducer units of different materials, a universal multi-layer isotope battery based on the radiation voltaic effect and its packaging structure are proposed, which can effectively improve the output performance of the isotope battery.

Description

Technical Field

[0001] The present invention relates to the field of isotope batteries, in particular to an isotope battery based on the beta radiation voltaic effect. Background Art

[0002] Radioisotope batteries offer long life, are unaffected by environmental interference, are stable and reliable, and require no human intervention. They have important applications in aerospace, defense, military, deep-sea polar exploration, and medical safety. Isotope batteries based on the beta-radiovoltaic effect utilize the built-in electric field of a semiconductor transducer to separate radioactively generated electron-hole pairs, converting the energy released by the decay of a radioisotope source into electrical energy. Compared to other isotope batteries, they offer high conversion efficiency, a compact structure, a small size, and a low weight.

[0003] The existing research on beta-radiation voltaic effect isotope batteries involves many aspects, including the study of the electrical properties of semiconductor materials, the optimization design of device structural parameters, the study of battery output characteristics, the influence of environmental factors and the selection of isotope sources. The selection of suitable semiconductor energy conversion materials will help to improve the output performance of beta-radiation voltaic effect isotope batteries to a certain extent. The preparation and doping process of single-crystal Si is mature and low-cost, and it has taken the lead in becoming the energy conversion material for beta-radiation voltaic effect isotope batteries. Due to the narrow band gap of Si materials and poor radiation resistance, the leakage current of Si-based devices is large, making it difficult to make a greater breakthrough in the energy conversion efficiency of Si-based beta-radiation voltaic effect isotope batteries. For example, in 2018, Liu et al. prepared a pn junction type 63 Ni-Si isotope battery, at 4.90mCi / cm 263 Under Ni source irradiation, the short-circuit current density of the battery is 17.5nA / cm 2 , the open circuit voltage is only 0.085V, and the maximum output power density is 0.55nW / cm 2[1] In recent years, the choice of energy conversion materials for β-radiation voltaic effect isotope batteries has begun to shift from Si materials to other wide bandgap semiconductor materials. In 2011, Qiao et al. prepared a 4H-SiC based Schottky junction isotope battery with a power of 4mCi / cm 263 Under Ni source irradiation, the short-circuit current density of the battery is 13.82nA / cm 2 , open circuit voltage is 0.26V, and maximum output power density is 2.02nW / cm 2 , energy conversion efficiency is 0.5% [2] In the same year, Lu et al. prepared a GaN-based Schottky junction isotope battery with a charge of 30 μCi / mm 263 Under Ni source irradiation, the short-circuit current density of the battery is 1.2nA / cm 2 , open circuit voltage is 0.1V, energy conversion efficiency is 0.32% [3]In 2012, Li et al. designed and prepared GaAs-based P + PINN + Type isotope battery, at 10mCi / cm 263 Under Ni source irradiation, the short-circuit current density of the battery is 0.36nA / cm 2 , open circuit voltage is 324mV, and maximum output power density is 0.071nW / cm 2[4] In 2016, Delfaure et al. designed and prepared a diamond-based (PIM) thin-film battery. Under 20keV electron beam irradiation, the battery short-circuit current was 7.12μA, open-circuit voltage was 1.85V, maximum output power was 10.48μW, and energy conversion efficiency was 9.4%. [5] .

[0004] Theoretically, wide-bandgap semiconductors (WBGs) are more suitable as transducer materials for isotope batteries due to their low leakage current. The energy conversion efficiency of isotope batteries increases with the width of the semiconductor material's bandgap. Therefore, semiconductor materials such as SiC, GaN, and diamond have been successfully used in the fabrication of β-radiation voltaic effect isotope batteries. However, under existing process conditions, some WBG semiconductor materials are not optimal due to issues such as material growth quality, doping techniques, and cost. The carrier diffusion length in most WBG semiconductor materials is very short, which is not conducive to the transport and collection of radioactive carriers. Therefore, it is necessary to make a trade-off between practical process, cost, and material properties. In terms of theoretical modeling, β-radiation isotope batteries often use the Monte Carlo method to simulate the transport behavior of β particles, clarify the energy deposition distribution in the transducer material, and derive analytical expressions for the battery output parameters by solving the carrier transport equation. However, the theoretical models used to predict battery output performance make numerous idealized approximations and assumptions, which deviate significantly from actual conditions. This leads to suboptimal device structure optimization and low output performance of experimental device samples. Therefore, the current β-radiation voltaic effect isotope battery still has problems such as low energy conversion efficiency, small output current and low output power.

[0005] Existing technologies primarily enhance the output characteristics of individual devices through research into the electrical properties of semiconductor materials, optimized design of device structural parameters, battery output characteristics, environmental influences, and the selection of isotope sources. However, most semiconductor materials have a low damage threshold for atomic displacement. When the radiation energy released by isotope decay is too high, it can cause defects in the semiconductor material and lead to device performance degradation. Therefore, most research utilizes low-energy beta radiation sources, which severely hinders the promotion and use of beta-radiation voltaic isotope batteries. Therefore, exploring new technologies, methods, and structures to enhance the output performance of beta-radiation voltaic isotope batteries is of great scientific significance and application value. Summary of the Invention

[0006] In view of this, an embodiment of the present invention provides an isotope battery based on the beta radiation voltaic effect.

[0007] An embodiment of the present invention provides an isotope battery based on the beta-radiovoltaic effect, comprising an insulating shell, an insulating limit fixture, and a battery module. The battery module is located within the insulating shell. The insulating limit fixture clamps the battery module and fixes it within the insulating shell. The battery module has at least one layer of isotope batteries with the beta-radiovoltaic effect.

[0008] As an optional solution, the insulating shell is a rectangular container with an opening, and limiting grooves for placing the insulating limiting clamps are provided on the two inner walls of the insulating shell opposite to the opening. The insulating limiting clamps are fastened to the limiting grooves to fix the battery module.

[0009] As an optional solution, the insulating limit fixture includes a first limit fixture and a second limit fixture, the first limit fixture and the second limit fixture have installation notches for limiting the battery module, and the installation notches abut against the battery module.

[0010] As an optional solution, the battery module is a single-layer isotope battery, and the battery module includes, from bottom to top, a heat sink, a first transition electrode, a second transition electrode, a solder, a first semiconductor transducer unit, a first radioactive isotope component and a gold wire. The first transition electrode is arranged on the heat sink, the solder is arranged on the first transition electrode, the first semiconductor transducer unit is arranged on the solder, the first radioactive isotope component is placed on the first semiconductor transducer unit, the first semiconductor transducer unit includes a first N-side electrode and a first P-side electrode, the first N-side electrode is connected to the solder, and the first P-side electrode is connected to the second transition electrode through the gold wire.

[0011] As an optional solution, the battery module is a single-layer isotope battery with radioluminescence-photovoltaic material, and the battery module also includes a first scintillating material layer, which is arranged on the first semiconductor transducer unit, and the first radioactive isotope component is placed on the first scintillating material layer.

[0012] As an optional solution, the battery module is a double-layer isotope battery, which includes, from bottom to top, a heat sink, a first transition electrode, a second transition electrode, a solder, a first semiconductor transducer unit, a second semiconductor transducer unit, a first radioactive isotope component, a first gold wire, a second gold wire and a third gold wire. The first transition electrode and the second transition electrode are arranged on the heat sink, the solder is arranged on the first transition electrode, the first semiconductor transducer unit is arranged on the solder, the first radioactive isotope component is placed on the first semiconductor transducer unit, and the second semiconductor transducer unit is arranged on the first radioactive isotope component. The first semiconductor transducer unit includes a first N-side electrode and a first P-side electrode, the first N-side electrode is connected to the solder, the first P-side electrode is connected to the second transition electrode through the first gold wire, the second semiconductor transducer unit includes a second N-side electrode and a second P-side electrode, the second P-side electrode is connected to the second transition electrode through the second gold wire, and the second N-side electrode is connected to the first transition electrode through the third gold wire.

[0013] As an optional solution, the battery module is a double-layer isotope battery with radioluminescence-photovoltaic material, and the battery module also includes a first scintillating material layer and a second scintillating material layer. The first scintillating material layer is arranged on the first semiconductor transducer unit, the first radioactive isotope component is placed on the first scintillating material layer, the second scintillating material layer is arranged on the first radioactive isotope component, the second semiconductor transducer unit is arranged on the second scintillating material layer, and the second P-side electrode is in contact with the second scintillating material layer.

[0014] As an optional solution, the battery module is a three-layer isotope battery, and the battery module includes, from bottom to top, a heat sink, a first transition electrode, a second transition electrode, a solder, a first semiconductor transducer unit, a second semiconductor transducer unit, a third semiconductor transducer unit, a first radioisotope component, a second radioisotope component, a first gold wire, a second gold wire, a third gold wire, a fourth gold wire, and a fifth gold wire. The first transition electrode and the second transition electrode are arranged on the heat sink, the solder is arranged on the first transition electrode, the first semiconductor transducer unit is arranged on the solder, the first radioisotope component is placed on the first semiconductor transducer unit, the second semiconductor transducer unit is arranged on the first radioisotope component, and the second semiconductor transducer unit is arranged on the The second radioactive isotope component, the second radioactive isotope component is provided with the third semiconductor transducer unit, the first semiconductor transducer unit includes a first N-side electrode and a first P-side electrode, the first N-side electrode is connected to the solder, and the first P-side electrode is connected to the second transition electrode through the first gold wire, the second semiconductor transducer unit includes a second N-side electrode and a second P-side electrode, the second P-side electrode is connected to the second transition electrode through the second gold wire, and the second N-side electrode is connected to the first transition electrode through the third gold wire, the third semiconductor transducer unit includes a third N-side electrode and a third P-side electrode, the third N-side electrode is connected to the first transition electrode through the fourth gold wire, and the P-side electrode is connected to the second transition electrode through the fifth gold wire.

[0015] As an optional solution, the battery module is a three-layer isotope battery with radioluminescence-photovoltaic material, and the battery module includes, from bottom to top, a heat sink, a first transition electrode, a second transition electrode, a solder, a first semiconductor transducer unit, a second semiconductor transducer unit, a third semiconductor transducer unit, a first radioisotope component, a second radioisotope component, a first scintillating material layer, a second scintillating material layer, a third scintillating material layer, a fourth scintillating material layer, a first gold wire, a second gold wire, a third gold wire, a fourth gold wire and a fifth gold wire, the first transition electrode and the second transition electrode are arranged on the heat sink, the solder is arranged on the first transition electrode, the first semiconductor transducer unit is arranged on the solder, the first scintillating material layer is arranged on the first semiconductor transducer unit, the first radioisotope component is placed on the first scintillating material layer, the second scintillating material layer is arranged on the first radioisotope component, and the second semiconductor transducer unit is arranged on the On the second scintillating material layer, the third scintillating material layer, the second radioactive isotope assembly and the fourth scintillating material layer are sequentially arranged on the second semiconductor transducer unit, the third semiconductor transducer unit is arranged on the fourth scintillating material layer, the first semiconductor transducer unit includes a first N-side electrode and a first P-side electrode, the first N-side electrode is connected to the solder, and the first P-side electrode is connected to the second transition electrode through the first gold wire, the second semiconductor transducer unit includes a second N-side electrode and a second P-side electrode, the second P-side electrode is connected to the second transition electrode through the second gold wire, and the second N-side electrode is connected to the first transition electrode through the third gold wire, the third semiconductor transducer unit includes a third N-side electrode and a third P-side electrode, the N-side electrode is in contact with the fourth scintillating material layer, the third N-side electrode is connected to the first transition electrode through the fourth gold wire, and the P-side electrode is connected to the second transition electrode through the fifth gold wire.

[0016] As an optional solution, the battery module is an N-layer isotope battery, where N is greater than or equal to 4. The battery module includes, from bottom to top, a heat sink, a transition electrode, solder, 1 to N semiconductor transducer units, 1 to N-1 radioactive isotope components and 2N-1 gold wires.

[0017] As an optional solution, the heat sink is made of aluminum nitride or silicon carbide, and multiple layers of metal are evaporated underneath the heat sink.

[0018] As an optional solution, the radioisotope component is 3 H. 63 Ni, 147 Pm and 90 Sr / 90 Any one of Y.

[0019] As an optional solution, the solder is AuSn solder or low-temperature solder.

[0020] As an optional solution, the radiation-induced fluorescent-photovoltaic material is any one or more of an inorganic fluorescent material or a scintillation material.

[0021] As an optional solution, the inorganic fluorescent material is a phosphor with alkaline earth metal chalcogenide or aluminate as the luminescent matrix and Cu, Ag, Au or rare earth lanthanide elements as the activator and co-activator.

[0022] As an optional solution, the scintillating material is any one of NaI crystal, CsI crystal, CdWO4 crystal, GAGG:Ce crystal, LYSO crystal, BGO crystal or GOS ceramic.

[0023] As an optional solution, an insulating isolation channel is provided between the first transition electrode and the second transition electrode.

[0024] As an optional solution, the insulating shell is a silicon carbide insulating shell.

[0025] The present invention provides an isotope battery based on the beta-radiovoltaic effect. Depending on the number of transducer units, it can be categorized as a single-layer isotope battery, a double-layer isotope battery, a triple-layer isotope battery, and even an N-layer isotope battery (comprising N transducer units and N-1 isotope sources, where N ≥ 4). Through ingenious design, a multi-layer isotope battery stacked packaging structure is achieved. The multi-layer isotope battery comprises an insulating housing, an insulating retaining fixture, and a battery module. The battery module is positioned within the insulating housing, and the retaining fixtures are positioned on both sides of the insulating housing. This aims to address the current situation in which beta-radiovoltaic isotope batteries suffer from low energy conversion efficiency, low output current, low output power, and the predominance of low-energy isotope sources. By designing a universal multi-layer isotope battery based on the beta-radiovoltaic effect and its packaging structure for transducer units made of different materials, the battery can effectively improve its output performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A schematic diagram of a patch package of an isotope battery based on the beta radiation voltaic effect is provided in an embodiment of the present invention;

[0027] Figure 2 A structural perspective diagram of an insulating shell in an isotope battery based on the beta radiation voltaic effect is provided in an embodiment of the present invention;

[0028] Figure 3 A top view of the structure of an insulating shell in an isotope battery based on the beta radiation voltaic effect is provided in an embodiment of the present invention;

[0029] Figure 4 A top view of the structure of an insulating limit fixture in an isotope battery based on the beta radiation voltaic effect is provided in an embodiment of the present invention;

[0030] Figure 5 A schematic structural diagram of an isotope battery based on the beta radiation voltaic effect using a single-layer beta radiation voltaic effect isotope battery is provided in an embodiment of the present invention;

[0031] Figure 6 A schematic structural diagram of an isotope battery based on the beta-radiovoltaic effect using a single-layer beta-radiovoltaic effect isotope battery with radioluminescence-photovoltaic material is provided in an embodiment of the present invention;

[0032] Figure 7 A schematic diagram of a double-layer β-radiation voltaic effect isotope battery chip package in an isotope battery based on the β-radiation voltaic effect is provided in an embodiment of the present invention;

[0033] Figure 8 A schematic structural diagram of a double-layer beta radiation voltaic effect isotope battery module in an isotope battery based on the beta radiation voltaic effect is provided in an embodiment of the present invention;

[0034] Figure 9 A schematic diagram of a double-layer β-radiation voltaic effect isotope battery chip package with radioluminescence-photovoltaic material in an isotope battery based on the β-radiation voltaic effect is provided in an embodiment of the present invention;

[0035] Figure 10 A schematic structural diagram of a double-layer β-radiovoltaic effect isotope battery module with radioluminescence-photovoltaic material in an isotope battery based on the β-radiovoltaic effect is provided in an embodiment of the present invention;

[0036] Figure 11 A schematic diagram of a three-layer β-radiation voltaic effect isotope battery chip package in an isotope battery based on the β-radiation voltaic effect is provided in an embodiment of the present invention;

[0037] Figure 12 A schematic structural diagram of a three-layer β-radiation voltaic effect isotope battery module in an isotope battery based on the β-radiation voltaic effect is provided in an embodiment of the present invention;

[0038] Figure 13 A schematic diagram of a three-layer β-radiation voltaic effect isotope battery chip package with radioluminescence-photovoltaic material in an isotope battery based on the β-radiation voltaic effect is provided in an embodiment of the present invention;

[0039] Figure 14 A schematic structural diagram of a three-layer β-radiation voltaic effect isotope battery module with radioluminescence-photovoltaic material in an isotope battery based on the β-radiation voltaic effect is provided in an embodiment of the present invention.

[0040] Figure 1: Heat sink 101, first transition electrode 102, second transition electrode 103, solder 104, first semiconductor transducer unit 201, second semiconductor transducer unit 202, third semiconductor transducer unit 203, first scintillating material layer 301, second scintillating material layer 302, first radioactive isotope assembly 401, second radioactive isotope assembly 402, first gold wire 501, second gold wire 502, third gold wire 503, fourth gold wire 504, fifth gold wire 505, first limiting fixture 601, second limiting fixture 602, limiting groove 603, mounting notch 604, insulating shell 701. DETAILED DESCRIPTION

[0041] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0042] The terms "first," "second," "third," "fourth," and the like in the specification and claims of the present invention and in the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a particular order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate so that the embodiments described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "including" and "having," and any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0043] Combine Figure 1As shown, an embodiment of the present invention provides an isotope battery based on the beta-radiovoltaic effect, comprising an insulating housing 701, an insulating limit fixture, and a battery module. The battery module is located within the insulating housing 701. The insulating limit fixture clamps the battery module and secures it within the insulating housing. The battery module comprises at least one layer of isotope batteries having the beta-radiovoltaic effect. Depending on the number of semiconductor transducer units, the isotope battery can be classified into a single-layer isotope battery (comprising one transducer unit and one isotope source), a double-layer isotope battery (comprising two transducer units and one isotope source), a triple-layer isotope battery (comprising three transducer units and two isotope sources), and even an N-layer isotope battery (comprising N transducer units and N-1 isotope sources, where N ≥ 4). A multi-layer isotope battery stacked packaging structure is achieved through ingenious design. The multi-layer isotope battery comprises an insulating shell, an insulating limiting fixture and a battery module. The battery module is placed in the insulating shell, and the limiting fixtures are placed on both sides of the interior of the insulating shell.

[0044] Combine Figure 2 and 3 As shown, for the fixing structure of the battery module, in this embodiment, the insulating shell 701 is a rectangular container with an opening, and limiting grooves 603 for placing the insulating limiting clamps are provided on the two inner walls of the insulating shell 701 opposite to the opening. The insulating limiting clamps are fastened to the limiting grooves 603 to fix the battery module.

[0045] Combine Figure 4 As shown, specifically, the insulating limit fixture includes a first limit fixture 601 and a second limit fixture 602, and the first limit fixture 601 and the second limit fixture 602 have a mounting notch 604 for limiting the battery module, and the mounting notch 604 abuts against the battery module.

[0046] Combine Figure 5 As shown, in one embodiment, the battery module is a single-layer isotope battery, and the battery module includes, from bottom to top, a heat sink 101, a first transition electrode 102, a second transition electrode 103, a solder 104, a first semiconductor transducer unit 201, a first radioactive isotope component 401 and a gold wire. The first transition electrode 102 is arranged on the heat sink 101, the solder 104 is arranged on the first transition electrode 102, the first semiconductor transducer unit 201 is arranged on the solder 104, the first radioactive isotope component 401 is placed on the first semiconductor transducer unit 201, and the first semiconductor transducer unit 201 includes a first N-side electrode and a first P-side electrode. The first N-side electrode is connected to the solder 104, and the first P-side electrode is connected to the second transition electrode 103 through the gold wire.

[0047] Combine Figure 6 As shown, in another embodiment, the battery module is a single-layer isotope battery with radioluminescence-photovoltaic material, and the battery module also includes a first scintillating material layer 301, the first scintillating material layer 301 is arranged on the first semiconductor transducer unit 201, and the first radioactive isotope component 401 is placed on the first scintillating material layer 301.

[0048] Combine Figure 7 and 8 As shown, in one embodiment, the battery module is a double-layer isotope battery, and the battery module includes, from bottom to top, a heat sink 101, a first transition electrode 102, a second transition electrode 103, a solder 104, a first semiconductor transducer unit 201, a second semiconductor transducer unit 202, a first radioisotope component 401, a first gold wire 501, a second gold wire 502, and a third gold wire 503. The first transition electrode 102 and the second transition electrode 103 are arranged on the heat sink 101, the solder 104 is arranged on the first transition electrode 102, the first semiconductor transducer unit 201 is arranged on the solder 104, and the first radioisotope component 401 is arranged on the third gold wire 503. 01 is placed on the first semiconductor transducer unit 201, and the second semiconductor transducer unit 202 is set on the first radioactive isotope component 401. The first semiconductor transducer unit 201 includes a first N-side electrode and a first P-side electrode. The first N-side electrode is connected to the solder 104, and the first P-side electrode is connected to the second transition electrode 103 through the first gold wire 501. The second semiconductor transducer unit 202 includes a second N-side electrode and a second P-side electrode. The second P-side electrode is connected to the second transition electrode 103 through the second gold wire 502, and the second N-side electrode is connected to the first transition electrode 102 through the third gold wire 503.

[0049] Combine Figure 9 and 10 As shown, in another embodiment, the battery module is a double-layer isotope battery with radioluminescence-photovoltaic material, and the battery module also includes a first scintillating material layer 301 and a second scintillating material layer 302, the first scintillating material layer 301 is arranged on the first semiconductor transducer unit 201, the first radioactive isotope component 401 is placed on the first scintillating material layer 301, the second scintillating material layer 302 is arranged on the first radioactive isotope component 401, the second semiconductor transducer unit 202 is arranged on the second scintillating material layer 302, and the second P-side electrode is in contact with the second scintillating material layer 302.

[0050] In combination with Figures 11 and 12, in one embodiment, the battery module is a three-layer isotope battery, and the battery module includes, from bottom to top, a heat sink 101, a first transition electrode 102, a second transition electrode 103, a solder 104, a first semiconductor transducer unit 201, a second semiconductor transducer unit 202, a third semiconductor transducer unit 203, a first radioisotope component 401, a second radioisotope component 402, a first gold wire 501, a second gold wire 502, a third gold wire 503, a fourth gold wire 504, and a fifth gold wire 505. The first transition electrode 102 and the second transition electrode 103 are arranged on the heat sink 101, the solder 104 is arranged on the first transition electrode 102, the first semiconductor transducer unit 201 is arranged on the solder 104, the first radioisotope component 401 is placed on the first semiconductor transducer unit 201, and the second semiconductor transducer unit 202 is arranged on the first radioisotope component 401. The second semiconductor transducer unit 202 is provided with the second radioactive isotope component 402, and the third semiconductor transducer unit 203 is provided on the second radioactive isotope component 402. The first semiconductor transducer unit 201 includes a first N-side electrode and a first P-side electrode, the first N-side electrode is connected to the solder 104, and the first P-side electrode is connected to the second transition electrode 103 through the first gold wire 501. The second semiconductor transducer unit 202 includes a second N-side electrode and a second P-side electrode, the second P-side electrode is connected to the second transition electrode 103 through the second gold wire 502, and the second N-side electrode is connected to the first transition electrode 102 through the third gold wire 503. The third semiconductor transducer unit 203 includes a third N-side electrode and a third P-side electrode, the third N-side electrode is connected to the first transition electrode 102 through the fourth gold wire 504, and the P-side electrode is connected to the second transition electrode 103 through the fifth gold wire 505.

[0051] Combine Figure 13 and 14As shown, in another embodiment, the battery module is a three-layer isotope battery with radioluminescence-photovoltaic material, and the battery module includes, from bottom to top, a heat sink 101, a first transition electrode 102, a second transition electrode 103, a solder 104, a first semiconductor transducer unit 201, a second semiconductor transducer unit 202, a third semiconductor transducer unit 203, a first radioisotope component 401, a second radioisotope component 402, a first scintillating material layer, a second scintillating material layer 302, a third scintillating material layer, a fourth scintillating material layer, a first gold wire 501, and a second gold wire 502. 2. The third gold wire 503, the fourth gold wire 504 and the fifth gold wire 505, the first transition electrode 102 and the second transition electrode 103 are arranged on the heat sink 101, the solder 104 is arranged on the first transition electrode 102, the first semiconductor transducer unit 201 is arranged on the solder 104, the first scintillating material layer is arranged on the first semiconductor transducer unit 201, the first radioisotope component 401 is placed on the first scintillating material layer, the second scintillating material layer 302 is arranged on the first radioisotope component, and the second semiconductor transducer unit 201 is arranged on the solder 104. The second scintillating material layer 302 is provided on the body transducer unit 202, the third scintillating material layer, the second radioisotope assembly 402 and the fourth scintillating material layer are sequentially provided on the second semiconductor transducer unit 202, the third semiconductor transducer unit 203 is provided on the fourth scintillating material layer, the first semiconductor transducer unit 201 includes a first N-side electrode and a first P-side electrode, the first N-side electrode is connected to the solder 104, the first P-side electrode is connected to the second transition electrode 103 via the first gold wire 501, and the second semiconductor The transducer unit 202 includes a second N-side electrode and a second P-side electrode, the second P-side electrode is connected to the second transition electrode 103 via a second gold wire 502, and the second N-side electrode is connected to the first transition electrode 102 via the third gold wire 503. The third semiconductor transducer unit 203 includes a third N-side electrode and a third P-side electrode, the N-side electrode is in contact with the fourth scintillating material layer, the third N-side electrode is connected to the first transition electrode 102 via a fourth gold wire 504, and the P-side electrode is connected to the second transition electrode 103 via a fifth gold wire 505.

[0052] In another embodiment, the battery module is an N-layer isotope battery, where N is greater than or equal to 4, and the battery module includes, from bottom to top, a heat sink 101, a transition electrode, a solder 104, 1 to N semiconductor transducer units, 1 to N-1 radioactive isotope components, and 2N-1 gold wires.

[0053] In some embodiments, the heat sink 101 is made of aluminum nitride or silicon carbide, and multiple layers of metal are evaporated below the heat sink 101. The radioactive isotope component is 3 H. 63 Ni, 147 Pm and 90 Sr / 90 Y, the solder 104 is AuSn solder 104 or low-temperature solder, the radiation-induced fluorescence-photovoltaic material is any one or more of an inorganic fluorescent material or a scintillation material, the inorganic fluorescent material is a phosphor with an alkaline earth metal chalcogenide or aluminate as a luminescent matrix and Cu, Ag, Au or a rare earth lanthanide as an activator and a co-activator, the scintillation material is any one of NaI crystal, CsI crystal, CdWO4 crystal, GAGG:Ce crystal, LYSO crystal, BGO crystal or GOS ceramic, an insulating isolation channel is provided between the first transition electrode 102 and the second transition electrode 103, and the insulating shell 701 is a silicon carbide insulating shell.

[0054] In the battery modules of the above-mentioned single-layer, double-layer, triple-layer and N-layer isotope batteries based on the β-radiovoltaic effect, the transition electrode is a multi-layer metal material, such as Cu, Ni, and Au, which is divided into two parts by an isolation channel.

[0055] In the battery modules of the above-mentioned single-layer, double-layer, triple-layer and N-layer isotope batteries based on the β-radiovoltaic effect, the solder can be a solder material with high thermal conductivity and good electrical conductivity, such as AuSn solder and low-temperature solder.

[0056] In the battery modules of the single-layer, double-layer, triple-layer, and N-layer isotope batteries based on the beta-radiovoltaic effect, semiconductor transducer units 1-N can be made of the same or different materials, such as silicon-based, GaAs-based, InP-based, SiC-based, GaN-based, and diamond-based. Their internal structures can be the same or different structures, such as Schottky junction, PN junction, and PIN type. Their upper and lower surfaces contain metallized electrodes. Semiconductor transducer unit 1 can have either its P-side or N-side contacting the solder. Semiconductor transducer unit 2 faces the same surface as unit 1 (P-side facing P-side or N-side facing N-side), semiconductor transducer unit 3 faces the same surface as unit 2, and semiconductor transducer unit N faces the same surface as unit N-1. Semiconductor transducer units 2-N contain etched windows to facilitate gold wire bonding.

[0057] In the battery modules of the single-layer, double-layer, triple-layer and N-layer isotope batteries based on the beta radiovoltaic effect, the radioisotope components 1 to N-1 must contain a beta radioisotope source, which can be 3 H. 63 Ni, 147 Pm and 90 Sr / 90Y et al., when the radioisotope source is 3 H. 63 Ni, 147 When the energy of the beta particles released by the decay of Pm is lower than 300keV, the radioactive isotope component is only 3 H. 63 Ni, 147 Pm and other single source materials; when the radioisotope source is 90 Sr / 90 For isotope sources with beta particles emitted by decays such as Y, whose energy exceeds 300 keV, the radioisotope assembly comprises the radioisotope source and solid-state radioluminescent material, with radioluminescent-photovoltaic material located between the radioisotope source and the semiconductor transducer unit. The radioisotope assembly also contains a notch to facilitate gold wire bonding.

[0058] In the radioisotope assembly, the radioluminescent-photovoltaic material can be any one or more inorganic fluorescent materials or scintillating materials. Inorganic fluorescent materials can be phosphors using alkaline earth metal chalcogenides (such as ZnS, CaS, etc.) or aluminates (such as SrAl2O4, CaAl2O4, BaAl2O4, etc.) as the luminescent matrix, and Cu, Ag, Au, or rare earth lanthanides (such as europium Eu, gadolinium Gd, samarium Sm, erbium Er, neodymium Nd, etc.) as activators and co-activators. Scintillating materials can be NaI(Tl) crystals, CsI(Tl) crystals, CdWO4 crystals, GAGG:Ce crystals, LYSO crystals, BGO crystals, and GOS ceramics, etc.

[0059] In the battery modules of the above-mentioned single-layer, double-layer, triple-layer and N-layer isotope batteries based on the β-radiovoltaic effect, the gold wire plays the role of connecting the semiconductor transducer unit and the transition electrode.

[0060] Combine Figure 5 As shown, the isotope battery based on the β radiation voltaic effect provided in the embodiment of the present invention takes a single-layer β radiation voltaic effect isotope battery as an example, and the patch packaging schematic diagram is shown in FIG. Figure 1As shown, specifically, from bottom to top, it includes a heat sink 101, which is made of aluminum nitride, with a lower surface coated with about 76μm Cu, 3μm Ni and 1μm Au, with a total thickness of 410μm; placed on the heat sink 101 is a first transition electrode 102 and a second transition electrode 103, which are respectively composed of 76μm Cu, 3μm Ni and 1μm Au materials, and there is a 200μm wide insulating isolation trench between the first transition electrode 102 and the second transition electrode 103; above the transition electrode 102 is a solder 104, which is made of 0.3μm Pt and 4μm thick AuSn solder with a ratio of 75 / 25; on the solder 104 is the first semiconductor transducer unit 201, which adopts GaAs-based PN junction transducer material. The first semiconductor transducer unit 201 includes a first N-side electrode and a first P-side electrode. The first N-side electrode is plated with Ni-Ge-Au-Ni-Au material with a thickness of about 500nm. The first N-side electrode is connected to the solder 104. The first P-side electrode is plated with Ti, Pt, and Au materials with a thickness of 315nm respectively. The first radioactive isotope component 401 is placed on the first semiconductor transducer unit 201. 63 Ni source, the first radioisotope component 401 has a 400nm×400nm square notch at one corner of its regular rectangle for gold wire bonding process, and the first P-side electrode of the first semiconductor transducer unit 201 and the second transition electrode 103 are connected by gold wire 501.

[0061] The schematic diagram of the single-layer isotope battery module structure is as follows Figure 2 As shown, the bottom is an insulating shell 701, and the two sides inside are the first limit fixture 601 and the second limit fixture 602, which will Figure 1 The three-layer isotope battery patch packaging structure shown is confined within the insulating tube shell 701 , and the first limiting fixture 601 and the second limiting fixture 602 are placed on the first transition electrode 102 and the second transition electrode 103 .

[0062] Combine Figure 6 As shown, the isotope battery based on the β radiation voltaic effect provided in the embodiment of the present invention takes a single-layer β radiation voltaic effect isotope battery with radioluminescence-photovoltaic material as an example. The schematic diagram of the patch packaging of the single-layer β radiation voltaic effect isotope battery with radioluminescence-photovoltaic material is shown in FIG. Figure 6As shown, specifically, from bottom to top, it includes a heat sink 101, which is made of aluminum nitride, and the lower surface is coated with about 76μm Cu, 3μm Ni and 1μm Au, with a total thickness of 410μm; placed on the heat sink 101 is a first transition electrode 102 and a second transition electrode 103, which are respectively composed of 76μm Cu, 3μm Ni and 1μm Au materials. There is a 200μm wide insulating isolation trench between the first transition electrode 102 and the second transition electrode 103. Above the first transition electrode 102 is a solder 104, which is made of 0.3μm Pt and 4μm thick AuSn solder with a ratio of 75 / 25; above the solder 104 is the first semiconductor transducer unit 201, which includes a first N-side electrode and a first P-side electrode, and adopts a GaAs-based PN junction transducer material. The first N-side electrode is plated with Ni-Ge-Au-Ni-Au material with a thickness of about 500nm. The first N-side electrode is connected to the solder 104, and the first P-side electrode is plated with Ti, Pt, and Au materials with a thickness of 315nm respectively; above the first semiconductor transducer unit 201 is the first scintillating material layer 301, which adopts cesium iodide (CsI) crystal material; above it is the first radioactive isotope component 401, which adopts 90 Sr / 90 Y source; the first P-side electrode and the second transition electrode 103 are connected by a first gold wire 501.

[0063] Combine Figure 7 and 8 As shown, the isotope battery based on the beta radiation voltaic effect provided in the embodiment of the present invention takes a double-layer beta radiation voltaic effect isotope battery as an example. The schematic diagram of the double-layer beta radiation voltaic effect isotope battery patch packaging is shown in FIG. Figure 8As shown, specifically, from bottom to top, it includes a heat sink 101, which is made of aluminum nitride, with a lower surface coated with about 76μm Cu, 3μm Ni and 1μm Au, with a total thickness of 410μm; placed on the heat sink 101 is a first transition electrode 102 and a second transition electrode 103, which are respectively composed of 76μm Cu, 3μm Ni and 1μm Au materials, and there is a 200μm wide insulating isolation trench between the first transition electrode 102 and the second transition electrode 103; above the first transition electrode 102 is a solder 104, which is made of 0.3μm Pt and 4μm thick AuSn solder with a ratio of 75 / 25; above the solder 104 is the first semiconductor transducer unit 201, which uses a GaAs-based PN junction transducer material. The first semiconductor transducer unit 201 includes a first N-side electrode and a first P-side electrode. The first N-side electrode is plated with Ni-Ge-Au-Ni-Au material with a thickness of about 500nm. The first N-side electrode is connected to the solder 104, and the first P-side electrode is plated with Ti, Pt, and Au materials with a thickness of 315nm respectively; above the first semiconductor transducer unit 201 is the first radioactive isotope component 401, which uses 63 Ni source, a square notch of 400nm×400nm is left in one corner of the regular rectangle of the first radioisotope component 401 for the gold wire bonding process; the second semiconductor transducer unit 202 is located above the first radioisotope component 401, which adopts GaAs-based PN junction transducer material. The second semiconductor transducer unit 202 includes a second N-side electrode and a second P-side electrode. The material structure, the metal plating of the second N-side electrode and the second P-side electrode of the second semiconductor transducer unit 202 are exactly the same as those of the first semiconductor transducer unit 201. The second P-side electrode is connected to the first radioisotope component 401. The second N-side electrode of the first semiconductor transducer unit 201 is in contact with the isotope component 401, and a 400nm×400nm square notch is prepared by photolithography and etching processes. The etching depth reaches the P-type doped region of the PN junction for gold wire bonding process; the second P-side electrode of the first semiconductor transducer unit 201 and the second transition electrode 103 are connected by a first gold wire 501, the second P-side electrode of the second semiconductor transducer unit 202 and the second transition electrode 103 are connected by a second gold wire 502, and the second N-side electrode of the semiconductor transducer unit 202 and the first transition electrode 102 are connected by a third gold wire 503.

[0064] In combination with Figures 9 and 10, the isotope battery based on the β radiation voltaic effect provided in the embodiment of the present invention takes a double-layer β radiation voltaic effect isotope battery with radioluminescence-photovoltaic material as an example. The schematic diagram of the patch packaging of the double-layer β radiation voltaic effect isotope battery with radioluminescence-photovoltaic material is shown in FIG. Figure 9As shown, specifically, from bottom to top, it includes a heat sink 101, which is made of aluminum nitride, with a lower surface coated with about 76μm Cu, 3μm Ni and 1μm Au, with a total thickness of 410μm; placed on the heat sink 101 is a first transition electrode 102 and a second transition electrode 103, which are respectively composed of 76μm Cu, 3μm Ni and 1μm Au materials, and there is a 200μm wide insulating isolation trench between the first transition electrode 102 and the second transition electrode 103; above the first transition electrode 102 is a solder 104, which is made of 0.3μm Pt and 4μm thick AuSn solder with a ratio of 75 / 25; above the solder 104 is the first semiconductor transducer unit 201, which adopts GaAs-based PN junction transducer material. The first semiconductor transducer unit 201 includes a first N-side electrode and a first P-side electrode. The first N-side electrode is plated with Ni-Ge-Au-Ni-Au material with a thickness of about 500nm. The first N-side electrode is connected to the solder 104. The first P-side electrode is plated with Ti, Pt, and Au materials with a thickness of 315nm respectively. Above the first semiconductor transducer unit 201 is the first scintillating material layer 301, which adopts cesium iodide (CsI) crystal material; above it is the first radioactive isotope component 401, which adopts 90 Sr / 90 Y source; on it is also the second scintillating material layer 302, which uses cesium iodide (CsI) crystal material. The surfaces of the first scintillating material layer 301, the first radioisotope component 401 and the second scintillating material layer 302 are not regular rectangles. A 400nm×400nm square gap is left in one corner of the regular rectangle for gold wire bonding process; on the second scintillating material layer 302 is the second semiconductor transducer unit 202, which uses GaAs-based PN junction transducer material. The second semiconductor transducer unit 202 includes a second N-side electrode and a second P-side electrode. The material structure, the second N-side electrode and the first The metal plated on the second P-side electrode is exactly the same as that of the first semiconductor transducer unit 201. The second P-side electrode contacts the second scintillating material layer 302. The second N-side electrode is prepared with a 400nm×400nm square notch through photolithography and etching processes. The etching depth reaches the P-type doped region of the PN junction for the gold wire bonding process; the second P-side electrode is connected to the second transition electrode 103 through the first gold wire 501, the second P-side electrode is connected to the second transition electrode 103 through the second gold wire 502, and the N-side of the second semiconductor transducer unit 202 and the first transition electrode 102 are connected through the third gold wire 503.

[0065] Combine Figure 11 and 12 As shown, the isotope battery based on the beta radiation voltaic effect provided in the embodiment of the present invention takes a three-layer beta radiation voltaic effect isotope battery as an example. The schematic diagram of the three-layer beta radiation voltaic effect isotope battery patch packaging is shown in FIG. Figure 11As shown, specifically, from bottom to top, it includes a heat sink 101, which is made of aluminum nitride, with a lower surface coated with about 76μm Cu, 3μm Ni and 1μm Au, with a total thickness of 410μm; placed on the heat sink 101 is a first transition electrode 102 and a second transition electrode 103, which are respectively composed of 76μm Cu, 3μm Ni and 1μm Au materials, and there is a 200μm wide insulating isolation trench between the first transition electrode 102 and the second transition electrode 103; above the first transition electrode 102 is a solder 104, which is made of 0.3μm Pt and 4μm thick AuSn solder with a ratio of 75 / 25; above the solder 104 is the first semiconductor transducer unit 201, which uses a GaAs-based PN junction transducer material. The first semiconductor transducer unit 201 includes a first N-side electrode and a first P-side electrode. The first N-side electrode is plated with Ni-Ge-Au-Ni-Au material with a thickness of about 500nm. The first N-side electrode is connected to the solder 104, and the P-side is plated with Ti, Pt, and Au materials with a thickness of 315nm respectively; above the first semiconductor transducer unit 201 is the first radioactive isotope component 401, which uses 63Ni source, the first radioisotope component 401 has a 400nm×400nm square notch in one corner of its regular rectangle for gold wire bonding process; above the first radioisotope component 401 is the second semiconductor transducer unit 202, which adopts GaAs-based PN junction transducer material, and the second semiconductor transducer unit 202 includes a second N-side electrode and a second P-side electrode. The material structure and the metal plating of the second N-side electrode and the second P-side electrode are exactly the same as those of the first semiconductor transducer unit 201. The second P-side electrode contacts the first radioisotope component 401, and the second N-side electrode is prepared with a 400nm×400nm square notch by photolithography and etching process, and the etching depth reaches the P-type doping area of ​​the PN junction for gold wire bonding process; above it is the second radioisotope component 402 which is exactly the same as the first radioisotope component 401, and also has a 400nm×400nm positive A square notch is provided for the gold wire bonding process; above the square notch is a third semiconductor transducer unit 203 made of the same material as the first semiconductor transducer unit 201, the third semiconductor transducer unit 203 including a third N-side electrode and a third P-side electrode, the third N-side electrode being in contact with the isotope source 402, a 400nm×400nm square notch being prepared on the third P-side electrode by photolithography and etching processes, the etching depth reaching the N-type doped region of the PN junction, for the gold wire bonding process; the second P-side electrode and the second transition electrode 103 of the first semiconductor transducer unit 201 are connected by a first gold wire 501, the second P-side electrode and the second transition electrode 103 are connected by a second gold wire 502, the second N-side electrode and the first transition electrode 102 are connected by a third gold wire 503, the third N-side electrode and the first transition electrode 102 are connected by a fourth gold wire 504, and the third P-side electrode and the second transition electrode 103 are connected by a fifth gold wire 505.

[0066] In combination with Figures 13 and 14, the isotope battery based on the β radiation voltaic effect provided in the embodiment of the present invention takes a three-layer β radiation voltaic effect isotope battery with radioluminescence-photovoltaic material as an example. The schematic diagram of the patch packaging of the three-layer β radiation voltaic effect isotope battery with radioluminescence-photovoltaic material is shown in FIG. Figure 13As shown, specifically, from bottom to top, it includes a heat sink 101, which is made of aluminum nitride, with a lower surface coated with about 76μm Cu, 3μm Ni and 1μm Au, with a total thickness of 410μm; placed on the heat sink 101 is a first transition electrode 102 and a second transition electrode 103, which are respectively composed of 76μm Cu, 3μm Ni and 1μm Au materials, and there is a 200μm wide insulating isolation trench between the first transition electrode 102 and the second transition electrode 103; above the first transition electrode 102 is a solder 104, which is made of 0.3μm Pt and 4μm thick AuSn solder with a ratio of 75 / 25; above the solder 104 is the first semiconductor transducer unit 201, which adopts GaAs-based PN junction transducer material. The first semiconductor transducer unit 201 includes a first N-side electrode and a first P-side electrode. The first N-side electrode is plated with Ni-Ge-Au-Ni-Au material with a thickness of about 500nm. The first N-side electrode is connected to the solder 104. The first P-side electrode is plated with Ti, Pt, and Au materials with a thickness of 315nm respectively. Above the first semiconductor transducer unit 201 is the first scintillating material layer 301, which adopts cesium iodide (CsI) crystal material; above it is the first radioactive isotope component 401, which adopts 90 Sr / 90Y source; on it is also the second scintillating material layer 302, which uses cesium iodide (CsI) crystal material. The surfaces of the first scintillating material layer 301, the first radioisotope component 401 and the second scintillating material layer 302 are not regular rectangles. A 400nm×400nm square gap is left in one corner of the regular rectangle for the gold wire bonding process; on the second scintillating material layer 302 is the second semiconductor transducer unit 202, which uses GaAs-based PN junction transducer material. The second semiconductor transducer unit 202 includes a second The N-side electrode and the second P-side electrode have the same material structure and metal plating as the first semiconductor transducer unit 201. The second P-side electrode contacts the second scintillating material layer 302. A 400nm×400nm square notch is prepared in the second N-side electrode through photolithography and etching processes. The etching depth reaches the P-type doped region of the PN junction for the gold wire bonding process. Above it is the same as the first scintillating material layer 301, the first radioisotope component 401 and the second scintillating material layer 302. The stacked materials - the third scintillating material layer 303, the second radioisotope component 402 and the second scintillating material layer 304, also leave a 400nm×400nm square gap for the gold wire bonding process; on it is the third semiconductor transducer unit 203 made of the same material as the first semiconductor transducer unit 201, the third semiconductor transducer unit 203 includes a third N-side electrode and a third P-side electrode, the third N-side electrode is in contact with the scintillating material 304, and the third P-side electrode is prepared by photolithography and etching processes to form a 400nm×4 00nm square notch, the etching depth reaches the N-type doped area of ​​the PN junction, which is used for gold wire bonding process; the first P-side electrode and the second transition electrode 103 are connected by the first gold wire 501, the second P-side electrode and the second transition electrode 103 are connected by the second gold wire 502, the second N-side electrode and the first transition electrode 102 are connected by the third gold wire 503, the third N-side electrode and the first transition electrode 102 are connected by the fourth gold wire 504, and the third P-side electrode and the second transition electrode 103 are connected by the fifth gold wire 505.

[0067] The present invention provides an isotope battery based on the beta-radiovoltaic effect. Depending on the number of transducer units, it can be categorized as a single-layer isotope battery, a double-layer isotope battery, a triple-layer isotope battery, and even an N-layer isotope battery (comprising N transducer units and N-1 isotope sources, where N ≥ 4). Through ingenious design, a multi-layer isotope battery stacked packaging structure is achieved. The multi-layer isotope battery comprises an insulating housing, an insulating retaining fixture, and a battery module. The battery module is positioned within the insulating housing, and the retaining fixtures are positioned on both sides of the insulating housing. This aims to address the current situation in which beta-radiovoltaic isotope batteries suffer from low energy conversion efficiency, low output current, low output power, and the predominance of low-energy isotope sources. By designing a universal multi-layer isotope battery based on the beta-radiovoltaic effect and its packaging structure for transducer units made of different materials, the battery can effectively improve its output performance.

[0068] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.

Claims

1. An isotope battery based on the beta radiation voltaic effect, characterized in that: The invention comprises an insulating shell, an insulating limit fixture and a battery module, wherein the battery module is located in the insulating shell, the insulating limit fixture clamps the battery module and fixes it in the insulating shell, wherein the battery module has at least one layer of isotope battery with beta radiation voltaic effect; The insulating housing is a rectangular container with an opening. Limiting grooves for accommodating the insulating limiting fixture are provided on two inner walls of the insulating housing opposite to the opening. The insulating limiting fixture is engaged with the limiting grooves to fix the battery module. The insulating limit fixture includes a first limit fixture and a second limit fixture, wherein the first limit fixture and the second limit fixture have mounting notches for limiting the battery module, and the mounting notches abut against the battery module; An insulating isolation channel is provided between the first transition electrode and the second transition electrode of the battery module.

2. The isotope battery based on the beta radiation voltaic effect according to claim 1, characterized in that: The battery module is a single-layer isotope battery, which includes, from bottom to top, a heat sink, a first transition electrode, a second transition electrode, a solder, a first semiconductor transducer unit, a first radioactive isotope component, and a gold wire. The first transition electrode is arranged on the heat sink, the solder is arranged on the first transition electrode, the first semiconductor transducer unit is arranged on the solder, the first radioactive isotope component is placed on the first semiconductor transducer unit, and the first semiconductor transducer unit includes a first N-side electrode and a first P-side electrode. The first N-side electrode is connected to the solder, and the first P-side electrode is connected to the second transition electrode via the gold wire.

3. The isotope battery based on the beta radiation voltaic effect according to claim 2, characterized in that: The battery module is a single-layer isotope battery with radioluminescence-photovoltaic material. The battery module also includes a first scintillating material layer, which is arranged on the first semiconductor transducer unit, and the first radioactive isotope component is placed on the first scintillating material layer.

4. The isotope battery based on the beta radiation voltaic effect according to claim 1, characterized in that: The battery module is a double-layer isotope battery, which includes, from bottom to top, a heat sink, a first transition electrode, a second transition electrode, a solder, a first semiconductor transducer unit, a second semiconductor transducer unit, a first radioactive isotope component, a first gold wire 501, a second gold wire 502, and a third gold wire. The first transition electrode and the second transition electrode are arranged on the heat sink, the solder is arranged on the first transition electrode, the first semiconductor transducer unit is arranged on the solder, the first radioactive isotope component is placed on the first semiconductor transducer unit, and the second semiconductor transducer unit is arranged on the first radioactive isotope component. The first semiconductor transducer unit includes a first N-side electrode and a first P-side electrode, the first N-side electrode is connected to the solder, and the first P-side electrode is connected to the second transition electrode through the first gold wire. The second semiconductor transducer unit includes a second N-side electrode and a second P-side electrode, the second P-side electrode is connected to the second transition electrode through the second gold wire 502, and the second N-side electrode is connected to the first transition electrode through the third gold wire.

5. The isotope battery based on the beta radiation voltaic effect according to claim 4, characterized in that: The battery module is a double-layer isotope battery with radioluminescence-photovoltaic material, and the battery module also includes a first scintillating material layer and a second scintillating material layer. The first scintillating material layer is arranged on the first semiconductor transducer unit, the first radioactive isotope component is placed on the first scintillating material layer, the second scintillating material layer is arranged on the first radioactive isotope component, the second semiconductor transducer unit is arranged on the second scintillating material layer, and the second P-side electrode is in contact with the second scintillating material layer.

6. The isotope battery based on the beta radiation voltaic effect according to claim 1, characterized in that: The battery module is a three-layer isotope battery, which includes, from bottom to top, a heat sink, a first transition electrode, a second transition electrode, a solder, a first semiconductor transducer unit, a second semiconductor transducer unit, a third semiconductor transducer unit, a first radioisotope component, a second radioisotope component 402, a first gold wire, a second gold wire 502, a third gold wire, a fourth gold wire and a fifth gold wire. The first transition electrode and the second transition electrode are arranged on the heat sink, the solder is arranged on the first transition electrode, the first semiconductor transducer unit is arranged on the solder, the first radioisotope component is placed on the first semiconductor transducer unit, the second semiconductor transducer unit is arranged on the first radioisotope component, and the second radioisotope component is arranged on the second semiconductor transducer unit. The radioactive isotope component 402, the second radioactive isotope component is provided with the third semiconductor transducer unit, the first semiconductor transducer unit includes a first N-side electrode and a first P-side electrode, the first N-side electrode is connected to the solder, the first P-side electrode is connected to the second transition electrode through the first gold wire, the second semiconductor transducer unit includes a second N-side electrode and a second P-side electrode, the second P-side electrode is connected to the second transition electrode through the second gold wire 502, the second N-side electrode is connected to the first transition electrode through the third gold wire, the third semiconductor transducer unit includes a third N-side electrode and a third P-side electrode, the third N-side electrode is connected to the first transition electrode through the fourth gold wire, and the P-side electrode is connected to the second transition electrode through the fifth gold wire.

7. The isotope battery based on the beta radiation voltaic effect according to claim 6, characterized in that: The battery module is a three-layer isotope battery with radioluminescence-photovoltaic material, and the battery module includes, from bottom to top, a heat sink, a first transition electrode, a second transition electrode, a solder, a first semiconductor transducer unit, a second semiconductor transducer unit, a third semiconductor transducer unit, a first radioisotope component, a second radioisotope component, a first scintillating material layer, a second scintillating material layer, a third scintillating material layer, a fourth scintillating material layer, a first gold wire, a second gold wire 502, a third gold wire, a fourth gold wire and a fifth gold wire. The first transition electrode and the second transition electrode are arranged on the heat sink, the solder is arranged on the first transition electrode, the first semiconductor transducer unit is arranged on the solder, the first scintillating material layer is arranged on the first semiconductor transducer unit, the first radioisotope component is placed on the first scintillating material layer, the second scintillating material layer is arranged on the first radioisotope component, and the second scintillating material layer is arranged on the second semiconductor transducer unit. On the scintillation material layer, the third scintillation material layer, the second radioactive isotope component and the fourth scintillation material layer are sequentially arranged on the second semiconductor transducer unit, the third semiconductor transducer unit is arranged on the fourth scintillation material layer, the first semiconductor transducer unit includes a first N-side electrode and a first P-side electrode, the first N-side electrode is connected to the solder, and the first P-side electrode is connected to the second transition electrode through the first gold wire, the second semiconductor transducer unit includes a second N-side electrode and a second P-side electrode, the second P-side electrode is connected to the second transition electrode through the second gold wire, and the second N-side electrode is connected to the first transition electrode through the third gold wire, the third semiconductor transducer unit includes a third N-side electrode and a third P-side electrode, the N-side electrode is in contact with the fourth scintillation material layer, the third N-side electrode is connected to the first transition electrode through the fourth gold wire, and the P-side electrode is connected to the second transition electrode through the fifth gold wire.

8. The isotope battery based on the beta radiation voltaic effect according to claim 1, characterized in that: The battery module is an N-layer isotope battery, where N is greater than or equal to 4. The battery module includes, from bottom to top, a heat sink, a transition electrode, solder, 1 to N semiconductor transducer units, 1 to N-1 radioactive isotope components, and 2N-1 gold wires.

9. The isotope battery based on the beta radiation voltaic effect according to any one of claims 2, 4 or 6, characterized in that: The heat sink is made of aluminum nitride or silicon carbide, and multiple layers of metal are evaporated below the heat sink.

10. The isotope battery based on the beta radiation voltaic effect according to claim 8, characterized in that: The radioisotope assembly is 3 H. 63 Ni, 147 Pm and 90 Sr / 90 Any one of Y.

11. The isotope battery based on the beta radiation voltaic effect according to any one of claims 2, 4 or 6, characterized in that: The solder is AuSn solder or low-temperature solder.

12. The isotope battery based on the beta radiation voltaic effect according to any one of claims 3, 5 or 7, characterized in that: The radioluminescent-photovoltaic material is any one or more of an inorganic fluorescent material or a scintillation material.

13. The isotope battery based on the beta radiation voltaic effect according to claim 12, characterized in that: The inorganic fluorescent material is a phosphor with alkaline earth metal chalcogenide or aluminate as a luminescent matrix and Cu, Ag, Au or rare earth lanthanide elements as an activator and a co-activator.

14. The isotope battery based on the beta radiation voltaic effect according to claim 12, characterized in that: The scintillating material is any one of NaI crystal, CsI crystal, CdWO4 crystal, GAGG:Ce crystal, LYSO crystal, BGO crystal or GOS ceramic.

15. The isotope battery based on the beta radiation voltaic effect according to claim 1, characterized in that: The insulating shell is a silicon carbide insulating shell.

Images