Display panel and electronic device

Abstract

The display panel and the electronic equipment provided by the embodiments of the present application relate to the technical field of display. The display panel has a first region corresponding to a light emitting region of each pixel light emitting unit and a second region located on the side of the first region. The display panel comprises a photoelectric conversion circuit and a detection control unit. The photoelectric conversion circuit is arranged in the second region. The detection control unit can control the photoelectric conversion circuit to convert ambient light into electric energy according to the working state of the pixel light emitting unit. The ambient light in the region where the photoelectric conversion circuit is located can be converted into electric energy on the premise of ensuring the normal working of the pixel light emitting unit. The converted electric energy can be supplied to the display panel for consumption, thereby improving the endurance of the display panel.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display panel and an electronic device. BACKGROUND

[0002] With the popularity of electronic devices (such as smart phones), large-screen display has become the mainstream development direction of consumer electronic devices. Large-screen display will lead to increased power consumption, and in the case of a certain battery capacity, the endurance performance of the electronic device will be poor. How to improve the endurance performance of the electronic device has become a technical problem that needs to be solved by those skilled in the art. SUMMARY

[0003] In order to overcome the technical problems mentioned in the above technical background, the embodiments of the present application provide a display panel and an electronic device.

[0004] In a first aspect, the present application provides a display panel, the display panel has a first area corresponding to a light-emitting area of each pixel light-emitting unit and a second area located on the periphery of the first area;

[0005] The display panel comprises a photoelectric conversion circuit and a detection control unit, and the photoelectric conversion circuit is located in the second area.

[0006] The detection control unit is connected with the photoelectric conversion circuit, and is used for detecting the working state of the pixel light-emitting unit and controlling the photoelectric conversion circuit to convert the ambient light of the area into electric energy according to the working state.

[0007] In a possible embodiment of the present application, the photoelectric conversion circuit comprises a photoelectric conversion diode, wherein the photoelectric conversion diode comprises a PN junction formed at the junction of a P-type semiconductor and an N-type semiconductor, and a first electrode connected with the P-type semiconductor and a second electrode connected with the N-type semiconductor.

[0008] The photoelectric conversion circuit is insulated from a pixel driving circuit used for driving the pixel light-emitting unit.

[0009] In a possible embodiment of the present application, the display panel further comprises an array driving layer and a pixel light-emitting layer which are arranged in a stack.

[0010] The photoelectric conversion circuit is arranged in the array driving layer corresponding to the second area, wherein the detection control unit controls the photoelectric conversion circuit to be disconnected when detecting that the working state of the pixel light-emitting unit is a light-emitting state, and controls the photoelectric conversion circuit to be connected when detecting that the working state of the pixel light-emitting unit is a non-light-emitting state.

[0011] In a possible embodiment of the present application, the array driving layer comprises an active layer, the PN junction of the photoelectric conversion diode and the PN junction of the transistor in the pixel driving circuit are arranged in the same layer in the active layer, and the PN junction of the photoelectric conversion diode and the PN junction of the transistor in the pixel driving circuit are arranged at intervals, wherein the PN junction of the photoelectric conversion diode is located in the second region, and the PN junction of the transistor in the pixel driving circuit is located in the first region.

[0012] In a possible embodiment of the present application, the display panel further comprises an array driving layer, a pixel light-emitting layer and a photoelectric conversion layer arranged in layers;

[0013] The photoelectric conversion circuit is arranged on the photoelectric conversion layer corresponding to the second region, and the detection control unit controls the photoelectric conversion circuit to be in a normally closed state.

[0014] In a possible embodiment of the present application, the photoelectric conversion layer comprises at least one of an optical device layer and a cover plate layer.

[0015] When the photoelectric conversion layer comprises the optical device layer and the cover plate layer, the optical device layer is located on the side of the pixel light-emitting layer away from the array driving layer, and the cover plate layer is located on the side of the optical device layer away from the array driving layer.

[0016] In a possible embodiment of the present application, the first electrode, the P-type semiconductor, the N-type semiconductor and the second electrode of the photoelectric conversion diode are sequentially arranged in layers on the photoelectric conversion layer; or,

[0017] The second electrode, the N-type semiconductor, the P-type semiconductor and the first electrode of the photoelectric conversion diode are sequentially arranged in layers on the photoelectric conversion layer.

[0018] In a possible embodiment of the present application, the P-type semiconductor and the N-type semiconductor are obtained by doping a photovoltaic material.

[0019] Preferably, the photovoltaic material comprises any one of monocrystalline silicon, polycrystalline silicon, amorphous silicon, gallium arsenide and gallium aluminum arsenide.

[0020] In a possible embodiment of the present application, the first electrode and the second electrode are made of transparent conductive material.

[0021] In a second aspect of the present application, an electronic device is provided, comprising a battery, a detection control unit and a display panel in any one of the possible embodiments of the first aspect.

[0022] The photoelectric conversion circuit in the display panel is connected with the battery.

[0023] The detection control unit is configured to detect the working state of the pixel light emitting unit, and control the on-off between the photoelectric conversion circuit and the battery according to the detected working state, wherein the battery is configured to store the electric energy converted by the photoelectric conversion circuit and provide the electric energy for the display panel.

[0024] The display panel and the electronic device provided by the embodiments of the present application have the first region corresponding to the light emitting region of each pixel light emitting unit and the second region located at the periphery of the first region, the photoelectric conversion circuit is arranged in the second region, and the detection control unit can control the photoelectric conversion circuit to convert the ambient light into electric energy according to the working state of the pixel light emitting unit. The ambient light in the region where the photoelectric conversion circuit is located can be converted into electric energy on the premise of ensuring the normal working of the pixel light emitting unit, so as to supply the converted electric energy to the display panel for consumption, thereby improving the endurance of the display panel. BRIEF DESCRIPTION OF DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0026] Figure 1 The pixel light emitting unit distribution and the partition schematic diagram of the display panel provided by the embodiments of the present application are illustrated.

[0027] Figure 2 A possible circuit structure block schematic diagram of the display panel provided by the embodiments of the present application is illustrated.

[0028] Figure 3 The structure schematic diagram of the photoelectric conversion circuit provided by the embodiments of the present application is illustrated.

[0029] Figure 4 A possible structure schematic diagram of the photoelectric conversion diode provided by the embodiments of the present application is illustrated.

[0030] Figure 5 A possible structure schematic diagram of the photoelectric conversion diode provided by the embodiments of the present application is illustrated. Figure 1 The cross-sectional structure schematic diagram of the display panel along the MM1 direction in the embodiment is illustrated.

[0031] Figure 6 A possible film layer structure schematic diagram of the display panel provided by the embodiments of the present application is illustrated.

[0032] Figure 7 Another possible film layer structure schematic diagram of the display panel provided by the embodiments of the present application is illustrated.

[0033] Figure 8A possible circuit structure block diagram of the electronic device provided in the embodiment is shown.

[0034] Icon: 10-electronic device; 100-display panel; 100A-first area; 100B-second area; 110-pixel light emitting unit; 120-photoelectric conversion circuit; 121-photoelectric conversion diode; 1211-P-type semiconductor; 1212-N-type semiconductor; 1213-PN junction in photoelectric conversion diode; 1214-first electrode; 1215-second electrode; 1223-PN junction of transistor in pixel driving circuit; 130-detection control unit; 101-array driving layer; 1011-active layer; 102-pixel light emitting layer; 103-photoelectric conversion layer; 1031-optical device layer; 1032-cover plate layer; 104-touch function layer; 200-battery. DETAILED DESCRIPTION

[0035] In order to make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings can be arranged and designed in various different configurations.

[0036] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work are within the scope of protection of the present application.

[0037] It should be noted that: similar reference numerals and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0038] In the description of the present application, it should be noted that the orientation or position relationship indicated by the terms "upper", "lower", etc. is based on the orientation or position relationship shown in the drawings, or the orientation or position relationship in which the product of the present application is usually placed, and is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", etc. are only used for differentiation in description, and cannot be understood as indicating or implying relative importance.

[0039] It should be noted that, in the case of no conflict, different features in the embodiments of the present application can be combined with each other.

[0040] To solve the technical problems mentioned in the background art, the inventors have innovatively designed the following technical solutions, which will be described in detail below with reference to the accompanying drawings.

[0041] Referring to Figure 1 , Figure 1 The distribution of the pixel light-emitting units of the display panel and the partition schematic diagram are illustrated, in this embodiment, the display panel 100 includes pixel light-emitting units 110 arranged in an array, the display panel 100 can have a first region 100A corresponding to the light-emitting region of each pixel light-emitting unit 110 and a second region 100B located on the side of the first region 100A, wherein the first region 100A and the second region 100B constitute the panel region of the display panel 100.

[0042] Referring to Figure 2 , Figure 2 A possible circuit structure schematic diagram of the display panel 100 is illustrated, in this embodiment, the display panel 100 can further include a photoelectric conversion circuit 120 and a detection control unit 130, the photoelectric conversion circuit 120 can be located in the second region 100B. The detection control unit 130 is electrically connected with the photoelectric conversion circuit 120, and the detection control unit 130 is used to detect the working state of the pixel light-emitting unit 110. Illustratively, the detection control unit 130 can determine the working state of the pixel light-emitting unit 110 by detecting whether the pixel light-emitting unit 110 emits light, or by detecting the electrical signal (such as the data signal Vdata) input in the pixel driving circuit, wherein the working state of the pixel light-emitting unit 110 includes the light-emitting working state and the non-light-emitting working state. Under the premise of ensuring the normal display of the display panel 100 (i.e. the normal working of the pixel light-emitting unit 110), the detection control unit 130 controls the photoelectric conversion circuit 120 to convert the ambient light in the region where the photoelectric conversion circuit 120 is located into electrical energy according to the working state of the pixel light-emitting unit 110.

[0043] In this embodiment, the detection control unit 130 can be implemented by using a Field Programmable Gate Array (FPGA), or by using an Integrated Circuit Chip (IC).

[0044] The above-mentioned solution, the detection control unit 130 can control the photoelectric conversion circuit 120 to convert the ambient light into electrical energy according to the working state of the pixel light-emitting unit 110, which can convert the ambient light in the region where the photoelectric conversion circuit 120 is located into electrical energy under the premise of ensuring the normal working of the pixel light-emitting unit 110, so as to provide the converted electrical energy for the display panel 100 to consume, thereby improving the endurance of the display panel 100.

[0045] Further, in the present embodiment, please refer to Figure 3 The photoelectric conversion circuit 120 can include a photoelectric conversion diode 121, and the number of photoelectric conversion diodes 121 in the photoelectric conversion circuit 120 can be one or multiple. When the number of photoelectric conversion diodes 121 is one, one photoelectric conversion diode 121 can be made on the entire second region 100B, and the photoelectric conversion circuit 120 can be formed by the photoelectric conversion diode 121. When the number of photoelectric conversion diodes 121 is multiple, multiple photoelectric conversion diodes 121 can be made on the entire second region 100B, and the photoelectric conversion circuit 120 can be formed by connecting the multiple photoelectric conversion diodes 121 in series. Please refer to Figure 4 , Figure 4 An example of a possible structure of the photoelectric conversion diode 121 is shown in FIG. 11. The photoelectric conversion diode 121 can include a P-type semiconductor 1211, an N-type semiconductor 1212, a PN junction 1213 of the photoelectric conversion diode formed at the junction of the P-type semiconductor 1211 and the N-type semiconductor 1212, a first electrode 1214 connected to the P-type semiconductor 1211, and a second electrode 1215 connected to the N-type semiconductor 1212. Ambient light irradiated on the PN junction 1213 of the photoelectric conversion diode can be absorbed, and photons with sufficient energy can excite electrons from covalent bonds in the P-type semiconductor 1211 and the N-type semiconductor 1212 to generate electron-hole pairs. The electrons and holes near the PN junction 1213 of the photoelectric conversion diode can be separated from each other by a space electric field before recombination. The electrons move to the N-type semiconductor 1212 region with positive charge, and the holes move to the P-type semiconductor 1211 region with negative charge. The charge separation through the PN junction 1213 of the photoelectric conversion diode can generate a testable voltage between the P-type semiconductor 1211 and the N-type semiconductor 1212. At this time, the electrical energy can be transmitted and stored through the first electrode 1214 and the second electrode 1215 connected to the P-type semiconductor 1211 and the N-type semiconductor 1212, respectively.

[0046] In order to avoid the influence of the electrical signal in the photoelectric conversion circuit 120 on the pixel light emitting unit 110, in the present embodiment, the photoelectric conversion circuit 120 is insulated from the pixel driving circuit (not shown in the figure) for driving the pixel light emitting unit 110. For example, the pixel driving circuit can be located in the first region 100A.

[0047] In a possible implementation of the present embodiment, please refer to Figure 5 , Figure 5 An example of a possible structure of the photoelectric conversion diode 121 is shown in FIG. 11. The photoelectric conversion diode 121 can include a P-type semiconductor 1211, an N-type semiconductor 1212, a PN junction 1213 of the photoelectric conversion diode formed at the junction of the P-type semiconductor 1211 and the N-type semiconductor 1212, a first electrode 1214 connected to the P-type semiconductor 1211, and a second electrode 1215 connected to the N-type semiconductor 1212. Ambient light irradiated on the PN junction 1213 of the photoelectric conversion diode can be absorbed, and photons with sufficient energy can excite electrons from covalent bonds in the P-type semiconductor 1211 and the N-type semiconductor 1212 to generate electron-hole pairs. The electrons and holes near the PN junction 1213 of the photoelectric conversion diode can be separated from each other by a space electric field before recombination. The electrons move to the N-type semiconductor 1212 region with positive charge, and the holes move to the P-type semiconductor 1211 region with negative charge. The charge separation through the PN junction 1213 of the photoelectric conversion diode can generate a testable voltage between the P-type semiconductor 1211 and the N-type semiconductor 1212. At this time, the electrical energy can be transmitted and stored through the first electrode 1214 and the second electrode 1215 connected to the P-type semiconductor 1211 and the N-type semiconductor 1212, respectively. Figure 1 Figure 2 Figure 5 ​​, the display panel 100 can include the array driving layer 101 and the pixel light emitting layer 102 which are arranged in a stack, and the photoelectric conversion circuit 120 is arranged on the array driving layer corresponding to the second area 100B. In this embodiment, the detection control unit 130 can control the photoelectric conversion circuit 120 to be open when it is detected that the working state of the pixel light emitting unit 110 is the light emitting state, so that no current is formed in the photoelectric conversion circuit 120, avoiding the crosstalk of the current in the photoelectric conversion circuit 120 to the electrical signal in the pixel driving circuit, and affecting the display of the display panel 100. The detection control unit 130 can also control the photoelectric conversion circuit 120 to be closed when it is detected that the working state of the pixel light emitting unit 110 is the non-light emitting state, so as to transmit and store electrical energy through the photoelectric conversion circuit 120.

[0048] Further, please refer to Figure 5 , the array driving layer 101 can also include an active layer 1011, the PN junction 1213 of the photoelectric conversion diode and the PN junction 1223 of the transistor in the pixel driving circuit are arranged in the same layer in the active layer 1011, and the PN junction 1213 of the photoelectric conversion diode is arranged apart from the PN junction 1223 of the transistor in the pixel driving circuit, wherein the PN junction 1213 of the photoelectric conversion diode is located in the second area 100B, and the PN junction 1223 of the transistor in the pixel driving circuit is located in the first area 100A. In this way, the PN junction 1223 of the transistor in the pixel driving circuit is not affected by the ambient light, thereby affecting the electrical properties of the transistor in the pixel driving circuit. In addition, the PN junction 1213 of the photoelectric conversion diode and the PN junction 1223 of the transistor in the pixel driving circuit are manufactured in the same layer, which is simpler in process and lower in cost than the non-same-layer manufacturing method.

[0049] In another possible embodiment of the present embodiment, please refer to Figure 6 , Figure 6 , a possible film layer structure diagram of the display panel 100 is illustrated, the display panel 100 can include the array driving layer 101, the pixel light emitting layer 102 and the photoelectric conversion layer 103 which are arranged in a stack, and the photoelectric conversion circuit 120 can be arranged on the photoelectric conversion layer 103 corresponding to the second area 100B. In this embodiment, the detection control unit 130 can control the photoelectric conversion circuit 120 to be in a normally closed state. The main difference between the present embodiment and the previous embodiment is that in the present embodiment, the film layer where the photoelectric conversion circuit 120 is arranged is located on the light emitting side of the pixel light emitting layer 102, while in the previous embodiment, the film layer where the photoelectric conversion circuit 120 is arranged is located on the backlight side of the pixel light emitting layer 102.

[0050] Further, please refer to Figure 7 , Figure 7In another possible film layer structure of the display panel 100, the photoelectric conversion layer 103 can include at least one of an optical device layer 1031 and a cover layer 1032, and the photoelectric conversion circuit 120 can be arranged on the optical device layer 1031 corresponding to the second area 100B, or the photoelectric conversion circuit 120 can be arranged on the cover layer 1032 corresponding to the second area 100B, or the photoelectric conversion circuit 120 can be arranged on both the optical device layer 1031 and the cover layer 1032 corresponding to the second area 100B respectively. When the photoelectric conversion layer 103 includes the optical device layer 1031 and the cover layer 1032, the optical device layer 1031 is located on the side of the pixel light-emitting layer 102 away from the array driving layer 101, and the cover layer 1032 is located on the side of the optical device layer 1031 away from the array driving layer 101. It can be understood that the display panel 100 can further include a touch function layer 104, and the touch function layer 104 is located between the optical device layer 1031 and the cover layer 1032. In this embodiment, the optical device layer 1031 can be a polaroid, and the cover layer 1032 can be a transparent glass cover.

[0051] In this embodiment, the first electrode 1214, the P-type semiconductor 1211, the N-type semiconductor 1212 and the second electrode 1215 of the photoelectric conversion diode 121 are sequentially stacked on the photoelectric conversion layer 103, or the second electrode 1215, the N-type semiconductor 1212, the P-type semiconductor 1211 and the first electrode 1214 of the photoelectric conversion diode 121 are sequentially stacked on the photoelectric conversion layer 103.

[0052] Further, in this embodiment, the P-type semiconductor 1211 and the N-type semiconductor 1212 can be obtained by doping a photovoltaic material, and the photovoltaic material can include any one of single crystal silicon, polycrystalline silicon, amorphous silicon, gallium arsenide and gallium aluminum arsenide.

[0053] In this embodiment, the first electrode 1214 and the second electrode 1215 can be made of transparent conductive material, so as to increase the transmittance of ambient light transmitted to the PN junction 1213 of the photoelectric conversion diode through the electrodes, increase the converted electric energy of the photoelectric conversion diode 121, and improve the endurance of the display panel 100.

[0054] This embodiment further provides an electronic device, please refer to Figure 8 , Figure 8A possible circuit structure block diagram of the electronic device 10 is shown, which can include the display panel 100 and the battery 200 as described above. The photoelectric conversion circuit 120 in the display panel 100 is connected to the battery 200, the battery 200 is used to store the electric energy transmitted by the photoelectric conversion circuit 120 and provide electric energy for the display panel 100. The detection control unit 130 is used to detect the working state of the pixel light emitting unit 110, and the detection control unit 130 controls the on-off between the photoelectric conversion circuit 120 and the battery 200 according to the detected working state.

[0055] The display panel and the electronic device provided by the embodiment of the present application have the first area corresponding to the light emitting area of each pixel light emitting unit and the second area located at the periphery of the first area. The display panel includes the photoelectric conversion circuit and the detection control unit. The photoelectric conversion circuit is arranged in the second area. The detection control unit can control the photoelectric conversion circuit to convert the ambient light into electric energy according to the working state of the pixel light emitting unit. The ambient light in the area where the photoelectric conversion circuit is located can be converted into electric energy on the premise of ensuring the normal working of the pixel light emitting unit, so as to supply the converted electric energy to the display panel for consumption, thereby improving the endurance of the display panel.

[0056] The above only describes the preferred embodiments of the present application and is not used to limit the present application. For those skilled in the art, the present application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A display panel, characterized in that, The display panel has a first region corresponding to the light-emitting area of ​​each pixel light-emitting unit and a second region located on the periphery of the first region; The display panel includes a photoelectric conversion circuit and a detection and control unit, wherein the photoelectric conversion circuit is located in the second region; The detection and control unit is connected to the photoelectric conversion circuit and is used to detect the working state of the pixel light-emitting unit and control the photoelectric conversion circuit to convert the ambient light of the area into electrical energy according to the working state. The display panel also includes a stacked array driving layer and a pixel light-emitting layer; The photoelectric conversion circuit is disposed in the array driving layer corresponding to the second region. When the detection control unit detects that the working state of the pixel light-emitting unit is the light-emitting state, it controls the photoelectric conversion circuit to be disconnected. When the detection control unit detects that the working state of the pixel light-emitting unit is the non-light-emitting state, it controls the photoelectric conversion circuit to be closed.

2. The display panel as described in claim 1, characterized in that, The photoelectric conversion circuit includes a photoelectric conversion diode, wherein the photoelectric conversion diode includes a PN junction formed by a P-type semiconductor and an N-type semiconductor at the junction of the two, and a first electrode connected to the P-type semiconductor and a second electrode connected to the N-type semiconductor; The photoelectric conversion circuit is insulated from the pixel driving circuit used to drive the pixel light-emitting unit.

3. The display panel as described in claim 2, characterized in that, The array driving layer includes an active layer. The PN junction of the photodiode and the PN junction of the transistor in the pixel driving circuit are disposed on the same layer of the active layer, and the PN junction of the photodiode and the PN junction of the transistor in the pixel driving circuit are spaced apart. The PN junction of the photodiode is located in the second region, and the PN junction of the transistor in the pixel driving circuit is located in the first region.

4. The display panel as described in claim 2, characterized in that, The display panel also includes an array driving layer, a pixel light-emitting layer and a photoelectric conversion layer stacked together; The photoelectric conversion circuit is disposed on the photoelectric conversion layer corresponding to the second region, and the detection and control unit controls the photoelectric conversion circuit to be in a normally closed state.

5. The display panel as described in claim 4, characterized in that, The photoelectric conversion layer includes at least one of an optical device layer and a cover plate layer; When the photoelectric conversion layer includes the optical device layer and the cover plate layer, the optical device layer is located on the side of the pixel light-emitting layer away from the array driving layer, and the cover plate layer is located on the side of the optical device layer away from the array driving layer.

6. The display panel as described in claim 5, characterized in that, The first electrode, P-type semiconductor, N-type semiconductor, and second electrode of the photodiode are sequentially stacked on the photodiode layer; or... The second electrode, N-type semiconductor, P-type semiconductor, and first electrode of the photoelectric conversion diode are sequentially stacked on the photoelectric conversion layer.

7. The display panel as described in any one of claims 2-6, characterized in that, The P-type semiconductor and the N-type semiconductor are obtained by doping with photovoltaic materials.

8. The display panel as described in claim 7, characterized in that, The photovoltaic material includes any one of monocrystalline silicon, polycrystalline silicon, amorphous silicon, gallium arsenide, and aluminum gallium arsenide.

9. The display panel as described in claim 7, characterized in that, The first electrode and the second electrode are made of transparent conductive material.

10. An electronic device, characterized in that, The electronic device includes a battery and a display panel as described in any one of claims 1-9; The photoelectric conversion circuit in the display panel is connected to the battery; The detection and control unit is used to detect the working state of the pixel light-emitting unit. The detection and control unit controls the connection and disconnection between the photoelectric conversion circuit and the battery according to the detected working state. The battery is used to store the electrical energy converted by the photoelectric conversion circuit and to provide power to the display panel.

Images