A double-sided heat dissipation power semiconductor module assembly with temperature measurement function

Abstract

The present invention relates to a double-sided heat dissipation power semiconductor module assembly with a temperature measurement function, comprising: a first power terminal, a second power terminal, a cooler, a double-sided copper-clad substrate, a heat dissipation copper plate, a temperature measuring resistor, a semiconductor chip, a copper-clad substrate, a binding wire and a signal terminal; the upper surface of the cooler is connected to the double-sided copper-clad substrate, the upper surface of the double-sided copper-clad substrate is connected to the semiconductor chip and the second power terminal, the upper surface of the semiconductor chip is connected to the heat dissipation copper plate, the upper surface of the heat dissipation copper plate is connected to the copper-clad substrate and the first power terminal, the upper surface of the copper-clad substrate is connected to the temperature measuring resistor, the binding wire leads the electrical signals of the temperature measuring resistor and the semiconductor chip to the copper-clad substrate, and the upper surface of the double-sided copper-clad substrate is also connected to the signal terminal, thereby solving the defects of inaccurate temperature measurement, poor heat dissipation capability and large stray parameters in the prior art.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor modules, and in particular to a double-sided heat dissipation power semiconductor module assembly with a temperature measurement function. Background Art

[0002] Semiconductor power module packaging technology mainly solves the heat dissipation, current carrying, reliable connection, power density improvement and other problems of the module. The existing power module temperature measurement method is to place temperature measuring resistors around the semiconductor chip. This temperature measurement method has a slow response and an uncertain temperature difference. It is usually necessary to combine the chip junction temperature estimation algorithm to calculate the chip temperature in the module in real time. The temperature measurement accuracy obtained by combining the junction temperature estimation usually still has a large deviation. The steady-state temperature measurement accuracy is generally ±10°C, and the transient error is even greater. In addition, the real-time junction temperature estimation occupies the processing chip resources, affecting the processing capacity of the main control chip.

[0003] The existing power module packaging technology uses aluminum or copper binding wires to connect the power chip and the power terminal. This connection method has a large stray inductance, which causes a large voltage and current shock during the semiconductor switching process, affecting the chip's service life and poor EMC performance. In particular, SiC devices have fast switching characteristics and their EMC performance is worse than that of IGBTs. The existing power module packaging technology usually uses single-sided heat dissipation technology, which only dissipates heat on the lower surface of the semiconductor chip, and has a poor heat dissipation effect. In the existing power module packaging technology, the copper busbars connected to the outside world are arranged horizontally side by side, and the distributed stray parameters of this arrangement are large. Summary of the invention

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the defects of inaccurate temperature measurement, poor heat dissipation capacity and large stray parameters in the prior art, thereby providing a double-sided heat dissipation power semiconductor module assembly with temperature measurement function.

[0005] A double-sided heat dissipation power semiconductor module assembly with a temperature measurement function, comprising: a first power terminal 1, a second power terminal 2, a cooler 3, a double-sided copper-clad substrate 4, a heat dissipation copper plate 5, a temperature measuring resistor 6, a semiconductor chip 7, a copper-clad substrate 8, a binding wire 9 and a signal terminal 10;

[0006] The upper surface of the cooler 3 is connected to the double-sided copper clad substrate 4, the upper surface of the double-sided copper clad substrate 4 is connected to the semiconductor chip 7 and the second power terminal 2, the upper surface of the semiconductor chip 7 is connected to the heat dissipation copper plate 5, the upper surface of the heat dissipation copper plate 5 is connected to the copper clad substrate 8 and the first power terminal 1, the upper surface of the copper clad substrate 8 is connected to the temperature measuring resistor 6, the binding wire 9 leads the electrical signals of the temperature measuring resistor 6 and the semiconductor chip 7 to the copper clad substrate 8, and the upper surface of the double-sided copper clad substrate 4 is also connected to the signal terminal 10.

[0007] Furthermore, a total of four signal terminals 10 are disposed on the upper surface of the copper clad substrate 4 , and the four signal terminals 10 are respectively a first signal terminal 10 - 1 , a second signal terminal 10 - 2 , a third signal terminal 10 - 3 and a fourth signal terminal 10 - 4 .

[0008] Furthermore, the number of the semiconductor chips 7 is set according to actual needs. When the number is more than 2, multiple semiconductor chips 7 need to be arranged in parallel.

[0009] Furthermore, the semiconductor chip 7 is an insulated gate bipolar transistor, the first power terminal 1 is connected to the collector of the insulated gate bipolar transistor IGBT, the second power terminal is connected to the emitter of the insulated gate bipolar transistor, the third signal terminal 10-3 is connected to the gate of the insulated gate bipolar transistor, and the fourth signal terminal 10-4 is connected to the emitter of the insulated gate bipolar transistor.

[0010] Furthermore, the semiconductor chip 7 is a metal-oxide semiconductor field effect transistor, the first power terminal 1 is connected to the drain of the metal-oxide semiconductor field effect transistor, the second power terminal 2 is connected to the source of the metal-oxide semiconductor field effect transistor, the third signal terminal 10-3 is connected to the gate of the metal-oxide semiconductor field effect transistor, and the fourth signal terminal 10-4 is connected to the source of the metal-oxide semiconductor field effect transistor.

[0011] Furthermore, it includes a first external power terminal 15 and a second external power terminal 16 , wherein the first external power terminal 15 is connected to the first power terminal 1 , the second external power terminal 16 is connected to one end of a copper busbar 17 , and the other end of the copper busbar 17 is connected to the second power terminal 2 .

[0012] Furthermore, the length of the first power terminal 1 is different from the length of the second power terminal 2 , and the length of the first external power terminal 15 is different from the length of the second external power terminal 16 .

[0013] Furthermore, the length of the first power terminal 1 is shorter than the length of the second power terminal 2 , and the length of the first external power terminal 15 is shorter than the length of the second external power terminal 16 .

[0014] Furthermore, it also includes a heat sink 12 and an insulating gasket 14 ; the heat sink 12 is connected to the copper-clad substrate 8 , and the insulating gasket 14 is located between the first power terminal 1 and the second power terminal 2 .

[0015] Furthermore, the lower surface of the semiconductor chip 7 is silver-burned onto the double-sided copper-clad substrate 4 , and the upper surface of the semiconductor chip 7 is soldered to the lower surface of the heat dissipation copper plate 5 .

[0016] The technical solution of the present invention has the following advantages:

[0017] 1. The present invention directly connects the temperature sensor to the upper surface of the semiconductor chip, and can directly read the temperature of the semiconductor chip without delay and error, and the temperature measurement is more accurate.

[0018] 2. The present invention uses a copper-clad substrate plus a copper busbar connection method instead of a binding wire connection method, which greatly reduces stray inductance, has stronger heat dissipation capability, and is smaller in size.

[0019] 3. The present invention adopts double-sided heat dissipation technology. The lower surface of the semiconductor chip is silver-burned onto the double-sided copper-clad substrate. The lower surface of the copper-clad substrate is welded to a direct water-cooled radiator. The upper surface of the semiconductor chip is welded with a copper plate for direct heat dissipation.

[0020] 4. The present invention arranges copper bars stacked up and down to minimize the current loop and reduce the distributed stray parameters to the greatest extent. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0022] Figure 1 It is a schematic diagram of the connection between the power terminal and the semiconductor chip of the present invention;

[0023] Figure 2 It is a structural diagram of the present invention;

[0024] Figure 3 for Figure 2 Side view of

[0025] Figure 4 It is a schematic diagram of the connection between the power terminal of the present invention and the external power terminal;

[0026] Description of reference numerals:

[0027] 1-first power terminal; 2-second power terminal; 3-cooler;

[0028] 4-double-sided copper-clad substrate; 5-heat dissipation copper plate; 6-temperature measuring resistor;

[0029] 7-semiconductor chip; 8-copper-clad substrate; 9-bonding wire;

[0030] 10- signal terminal; 10-1- first signal terminal; 10-2- second signal terminal;

[0031] 10-3-third signal terminal; 10-4 fourth signal terminal; 12-heat sink;

[0032] 13-plastic sealing frame; 14-insulating gasket; 15-first external power terminal;

[0033] 16-second external power terminal; 17-copper busbar; DETAILED DESCRIPTION

[0034] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0035] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0036] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0037] In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0038] A double-sided heat dissipation power semiconductor module assembly with a temperature measurement function, comprising: a first power terminal 1, a second power terminal 2, a cooler 3, a double-sided copper-clad substrate 4, a heat dissipation copper plate 5, a temperature measuring resistor 6, a semiconductor chip 7, a copper-clad substrate 8, a binding wire 9 and a signal terminal 10;

[0039] The upper surface of the cooler 3 is connected to the double-sided copper clad substrate 4, the upper surface of the double-sided copper clad substrate 4 is connected to the semiconductor chip 7 and the second power terminal 2, the upper surface of the semiconductor chip 7 is connected to the heat dissipation copper plate 5, the upper surface of the heat dissipation copper plate 5 is connected to the copper clad substrate 8 and the first power terminal 1, the upper surface of the copper clad substrate 8 is connected to the temperature measuring resistor 6, the binding wire 9 leads the electrical signals of the temperature measuring resistor 6 and the semiconductor chip 7 to the copper clad substrate 8, and the upper surface of the double-sided copper clad substrate 4 is also connected to the signal terminal 10.

[0040] A total of four signal terminals 10 are disposed on the upper surface of the copper clad substrate 4 , and the four signal terminals 10 are respectively a first signal terminal 10 - 1 , a second signal terminal 10 - 2 , a third signal terminal 10 - 3 and a fourth signal terminal 10 - 4 .

[0041] The number of the semiconductor chips 7 is set according to actual needs. When the number is more than 2, multiple semiconductor chips 7 need to be arranged in parallel, so that the power scalability is good, and the uniform arrangement is conducive to the consistency of the device switching characteristics.

[0042] The semiconductor chip 7 is an insulated gate bipolar transistor, the first power terminal 1 is connected to the collector of the insulated gate bipolar transistor IGBT, the second power terminal 2 is connected to the emitter of the insulated gate bipolar transistor, the third signal terminal 10-3 is connected to the gate of the insulated gate bipolar transistor, and the fourth signal terminal 10-4 is connected to the emitter of the insulated gate bipolar transistor.

[0043] The semiconductor chip 7 is a metal-oxide semiconductor field effect transistor, the first power terminal 1 is connected to the drain of the metal-oxide semiconductor field effect transistor, the second power terminal 2 is connected to the source of the metal-oxide semiconductor field effect transistor, the third signal terminal 10-3 is connected to the gate of the metal-oxide semiconductor field effect transistor, and the fourth signal terminal 10-4 is connected to the source of the metal-oxide semiconductor field effect transistor.

[0044] The present invention also includes a first external power terminal 15 and a second external power terminal 16 , wherein the first external power terminal 15 is connected to the first power terminal 1 , the second external power terminal 16 is welded to one end of a copper busbar 17 , and the other end of the copper busbar 17 is welded to the second power terminal 2 .

[0045] The length of the first power terminal 1 is different from the length of the second power terminal 2 , and the length of the first external power terminal 15 is different from the length of the second external power terminal 16 .

[0046] The length of the first power terminal 1 is shorter than that of the second power terminal 2 , and the length of the first external power terminal 15 is shorter than that of the second external power terminal 16 .

[0047] The present invention also includes a heat sink 12 and an insulating gasket 14; the heat sink 12 is connected to the copper-clad substrate 8, the insulating gasket 14 is located between the first power terminal 1 and the second power terminal 2, the plastic package frame 13 covers the power semiconductor device inside, and finally is encapsulated with epoxy resin to form a power module.

[0048] Silver is burned onto the double-sided copper clad substrate 4 on the lower surface of the semiconductor chip 7 , and the upper surface of the semiconductor chip 7 is soldered to the lower surface of the heat dissipation copper plate 5 .

[0049] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention.

Claims

1. A double-sided heat dissipation power semiconductor module assembly with temperature measurement function, characterized in that: include: A first power terminal (1), a second power terminal (2), a cooler (3), a double-sided copper-clad substrate (4), a heat dissipation copper plate (5), a temperature measuring resistor (6), a semiconductor chip (7), a copper-clad substrate (8), a binding wire (9), and a signal terminal (10); The upper surface of the cooler (3) is connected to the double-sided copper-clad substrate (4), the upper surface of the double-sided copper-clad substrate (4) is connected to the semiconductor chip (7) and the second power terminal (2), the upper surface of the semiconductor chip (7) is connected to the heat dissipation copper plate (5), the upper surface of the heat dissipation copper plate (5) is connected to the copper-clad substrate (8) and the first power terminal (1), the upper surface of the copper-clad substrate (8) is connected to the temperature measuring resistor (6), the binding wire (9) leads the electrical signals of the temperature measuring resistor (6) and the semiconductor chip (7) to the copper-clad substrate (8), and the upper surface of the double-sided copper-clad substrate (4) is also connected to the signal terminal (10).

2. The semiconductor module assembly according to claim 1, characterized in that: A total of four signal terminals (10) are arranged on the upper surface of the copper-clad substrate (4), and the four signal terminals (10) are respectively a first signal terminal (10-1), a second signal terminal (10-2), a third signal terminal (10-3) and a fourth signal terminal (10-4).

3. The semiconductor module assembly according to claim 1, characterized in that: The number of the semiconductor chips (7) is set according to actual needs. When the number is more than 2, a plurality of the semiconductor chips (7) need to be arranged in parallel.

4. The semiconductor module assembly according to claim 3, characterized in that: The semiconductor chip (7) is an insulated gate bipolar transistor, the first power terminal (1) is connected to the collector of the insulated gate bipolar transistor IGBT, the second power terminal (2) is connected to the emitter of the insulated gate bipolar transistor, the third signal terminal (10-3) is connected to the gate of the insulated gate bipolar transistor, and the fourth signal terminal (10-4) is connected to the emitter of the insulated gate bipolar transistor.

5. The semiconductor module assembly according to claim 3, characterized in that: The semiconductor chip (7) is a metal-oxide semiconductor field effect transistor, the first power terminal (1) is connected to the drain of the metal-oxide semiconductor field effect transistor, the second power terminal (2) is connected to the source of the metal-oxide semiconductor field effect transistor, the third signal terminal (10-3) is connected to the gate of the metal-oxide semiconductor field effect transistor, and the fourth signal terminal (10-4) is connected to the source of the metal-oxide semiconductor field effect transistor.

6. The semiconductor module assembly according to claim 1, characterized in that: It also comprises a first external power terminal (15) and a second external power terminal (16), wherein the first external power terminal (15) is connected to the first power terminal (1), the second external power terminal (16) is connected to one end of a copper busbar (17), and the other end of the copper busbar (17) is connected to the second power terminal (2).

7. The semiconductor module assembly according to claim 6, characterized in that: The length of the first power terminal (1) is different from the length of the second power terminal (2), and the length of the first external power terminal (15) is also different from the length of the second external power terminal (16).

8. The semiconductor module assembly according to claim 7, characterized in that: The length of the first power terminal (1) is shorter than the length of the second power terminal (2), and the length of the first external power terminal (15) is shorter than the length of the second external power terminal (16).

9. The semiconductor module assembly according to claim 1, characterized in that: It also comprises a heat sink (12) and an insulating gasket (14); the heat sink (12) is connected to the copper-clad substrate (8), and the insulating gasket (14) is located between the first power terminal (1) and the second power terminal (2).

10. The semiconductor module assembly according to claim 1, characterized in that: Silver is burned onto the double-sided copper-clad substrate (4) on the lower surface of the semiconductor chip (7), and the upper surface of the semiconductor chip (7) is welded to the lower surface of the heat dissipation copper plate (5).

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