Infrared light emitting device and packaging method thereof

Abstract

The present application relates to the field of diode technology, and provides an infrared light-emitting device, including: a blue light LED chip and a fluoride red-pink fluorescent film layer and an infrared light-emitting material layer arranged on the blue light LED chip; wherein the fluoride red-pink fluorescent film layer is located between the blue light LED chip and the infrared light-emitting material layer. The infrared light-emitting device provided by the present application, because the fluoride red-pink fluorescent film layer contained in the infrared light-emitting device is located between the blue light LED chip and the infrared light-emitting material layer, can excite the fluoride red phosphor in the fluoride red-pink fluorescent film layer through the blue light LED chip emitting blue light, so that the fluoride red phosphor emits red light and cooperates with the excited blue light to excite the infrared light-emitting material in the infrared light-emitting material layer, so that the infrared light-emitting material can greatly improve the excitation efficiency under the synergistic effect of red light and blue light, and significantly improve the infrared emission intensity, so the infrared light-emitting device has high luminous efficiency.

Description

Technical Field

[0001] The present application belongs to the field of diode technology, and in particular relates to an infrared light-emitting device and a packaging method thereof. Background Art

[0002] Infrared light emitting diodes are diodes that can emit infrared rays. They are usually used in security monitoring, wearable devices, infrared communications, infrared remote control devices, light sources for sensors, and nighttime lighting. At present, infrared light emitting diode technology is mainly realized by infrared chip packaging and LED blue light chips to excite infrared phosphors. However, the emission spectrum of infrared chips is relatively narrow, only reaching 30-40nm, and cannot be applied in wide spectrum fields. Only using LED blue light chips to excite infrared phosphors, due to the large Stosker shift, the conversion efficiency of infrared phosphors is low, resulting in low luminous efficiency of infrared light emitting diodes.

[0003] Therefore, how to obtain infrared light-emitting diodes with high luminous efficiency is a problem that needs to be solved urgently. Summary of the invention

[0004] The purpose of the present application is to provide an infrared light-emitting device and a packaging method thereof, aiming to solve the problem of low light-emitting efficiency of existing infrared light-emitting devices.

[0005] In order to achieve the above application purpose, the technical solution adopted in this application is as follows:

[0006] In a first aspect, the present application provides an infrared light-emitting device, comprising: a blue light LED chip and a fluoride red-pink fluorescent film layer and an infrared light-emitting material layer provided on the blue light LED chip;

[0007] Among them, the fluoride red-pink fluorescent film layer is located between the blue light LED chip and the infrared light-emitting material layer.

[0008] In a second aspect, the present application provides a packaging method for an infrared light-emitting device, comprising the following steps:

[0009] Provide blue LED chips;

[0010] A fluoride red-pink fluorescent film layer and an infrared luminescent material layer are sequentially coated on a blue light LED chip to obtain an infrared luminescent device.

[0011] Compared with the prior art, this application has the following technical effects:

[0012] The infrared light-emitting device provided in the first aspect of the present application includes a blue light LED chip and a fluoride red-pink fluorescent film layer and an infrared light-emitting material layer arranged on the blue light LED chip. Since the fluoride red-pink fluorescent film layer is located between the blue light LED chip and the infrared light-emitting material layer, the infrared light-emitting device can excite the fluoride red phosphor in the fluoride red-pink fluorescent film layer by emitting blue light through the blue light LED chip, so that the fluoride red phosphor emits red light and cooperates with the excited blue light to excite the infrared light-emitting material in the infrared light-emitting material layer. Therefore, under the synergistic effect of red light and blue light, the excitation efficiency of the infrared light-emitting material can be greatly improved, and the infrared emission intensity is significantly improved. Therefore, the infrared light-emitting device has high luminous efficiency.

[0013] The second aspect of the present application provides a packaging method for an infrared light-emitting device, which can obtain an infrared light-emitting device with high luminous efficiency by sequentially coating a fluoride red-pink fluorescent film layer and an infrared light-emitting material layer on a blue light LED chip. The packaging method has simple process, high efficiency, low cost, and is suitable for industrial large-scale production, and therefore has broad application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0015] Figure 1 is a schematic diagram of the structure of an infrared light-emitting device provided in an embodiment of the present application;

[0016] Figure 2 It is a process flow chart of the packaging method of the infrared light-emitting device provided in the embodiment of the present application.

[0017] Among them, the reference numerals in the figure are:

[0018] 1—substrate, 2—blue light LED chip, 3—fluoride red-pink fluorescent film layer, 4—infrared light-emitting material layer, 5—glue layer. DETAILED DESCRIPTION

[0019] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0020] In this application, the term "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural. The character " / " generally indicates that the associated objects are in an "or" relationship.

[0021] In this application, "at least one" means one or more, and "plurality" means two or more. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0022] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution, some or all of the steps can be executed in parallel or sequentially, and the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0023] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "said" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings.

[0024] The weight of the relevant components mentioned in the embodiment description of the present application can not only refer to the specific content of each component, but also represent the proportional relationship between the weights of the components. Therefore, as long as the content of the relevant components is proportionally enlarged or reduced according to the embodiment description of the present application, it is within the scope disclosed in the embodiment description of the present application. Specifically, the mass described in the embodiment description of the present application can be a mass unit known in the chemical industry such as μg, mg, g, kg, etc.

[0025] The terms "first" and "second" are used only for descriptive purposes to distinguish objects such as substances from each other, and should not be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. For example, without departing from the scope of the embodiments of the present application, the first XX may also be referred to as the second XX, and similarly, the second XX may also be referred to as the first XX. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features.

[0026] In a first aspect, an infrared light emitting device is provided. Figure 1 As shown, it comprises: a blue LED chip 2 and a fluoride red-pink fluorescent film layer 3 and an infrared luminescent material layer 4 arranged on the blue LED chip;

[0027] The fluoride red-pink fluorescent film layer 3 is located between the blue light LED chip 2 and the infrared light-emitting material layer 4 .

[0028] The infrared light-emitting device provided in the embodiment of the present application includes a blue light LED chip and a fluoride red-pink fluorescent film layer and an infrared light-emitting material layer arranged on the blue light LED chip. Since the fluoride red-pink fluorescent film layer is located between the blue light LED chip and the infrared light-emitting material layer, the infrared light-emitting device can excite the fluoride red phosphor in the fluoride red-pink fluorescent film layer by emitting blue light through the blue light LED chip, so that the fluoride red phosphor emits red light and cooperates with the excited blue light to excite the infrared light-emitting material in the infrared light-emitting material layer. Therefore, under the cooperative excitation of red light and blue light, the excitation efficiency of the infrared light-emitting material can be greatly improved, and the infrared emission intensity can be significantly improved. Therefore, the infrared light-emitting device has high luminous efficiency.

[0029] In the infrared light-emitting device of the embodiment of the present application, the blue light LED chip 2 can be arranged on the substrate 1, and the light-emitting surface of the blue light LED chip faces upward. The fluoride red-pink fluorescent film layer 3 covers the surrounding side walls and the top of the blue light LED chip, which can prevent the blue light from leaking from the surrounding side walls and the top, thereby improving the excitation efficiency and ensuring the high light-emitting efficiency of the infrared light-emitting device.

[0030] In the embodiment, the emission peak wavelength of the blue LED chip is 450-455nm. The wavelength of the blue LED chip is selected from the blue LED chip of 450-455nm, which can ensure that the fluoride red-pink fluorescent film layer and the infrared luminescent material layer are excited in this wavelength range with the best overall effect and high luminous flux.

[0031] In the embodiment, the thickness of the fluoride red-pink fluorescent film layer is 100-200 μm, preferably 120-150 μm. The fluoride red-pink fluorescent film layer includes fluoride red phosphor and a first silica gel mixed with the fluoride red phosphor, and the mass ratio of the fluoride red phosphor to the first silica gel is 1: (1-3), preferably 1: (1.5-2). Within the range of the thickness of the fluoride red-pink fluorescent film layer and the mass ratio of the fluoride red phosphor to the first silica gel provided in the embodiment of the present application, it can be ensured that the spectrum of the fluoride red-pink fluorescent film layer excited by the blue light LED chip is close to the relative intensity ratio of each wavelength of the excitation spectrum of the infrared light-emitting material layer, so that the excitation efficiency of the infrared light-emitting material layer is greatly improved under the synergistic excitation of red light and blue light, thereby effectively improving the infrared emission intensity. Therefore, the infrared light-emitting device has high luminous efficiency and good stability.

[0032] The fluoride red-pink fluorescent film layer of the embodiment of the present application can be formed by attaching the fluoride red-pink fluorescent film to the four side walls and top of the blue light LED chip by a chip mounter, wherein the fluoride red-pink fluorescent film contains fluoride red phosphor and first silica gel, and the mass ratio of fluoride red phosphor to first silica gel is 1: (1-3), preferably 1: (1.5-2). The particle size of the fluoride red phosphor is 10-20μm, preferably 13-17μm. Compared with the fluoride red-pink fluorescent film layer formed by directly mixing the fluoride red phosphor and the first silica gel and then directly coating it on the blue light LED chip, the mass ratio of the fluoride red phosphor and the first silica gel can be reduced, which is beneficial to improving the cold and hot shock performance and high temperature stability of the external light-emitting device.

[0033] In an embodiment, the fluoride red phosphor is selected from K2SiF6:Mn 4+ 、K2GeF6:Mn 4+ 、K2(Si,Ge)F6:Mn 4+ At least one of the following. Further, the fluoride red phosphor has a light emission wavelength of 620 to 630 nm. 4+ 、K2GeF6:Mn 4+ 、K2(Si,Ge)F6:Mn 4+ Any one or more fluoride red phosphors can ensure that the red fluorescence emission wavelength is 620-630nm, which is a narrow-band emission and can improve the light excitation efficiency and stability.

[0034] In an embodiment, the thickness of the infrared luminescent material layer is 100-300 μm, preferably 150-200 μm. The infrared luminescent material layer includes infrared phosphor and a second silica gel mixed with the infrared phosphor, and the mass ratio of the infrared phosphor to the second silica gel is 1: (1-2), preferably 1: (1.4-1.7). The particle size of the infrared phosphor is 15-25 μm, preferably 19-22 μm. Within the range of the thickness of the infrared luminescent material layer and the mass ratio of the infrared phosphor to the second silica gel provided in the embodiment of the present application, the conversion of visible light into infrared light can be promoted, the emission efficiency of the infrared luminescent material layer can be improved, and the infrared light-emitting device can also eliminate visible light.

[0035] In the embodiment, the infrared phosphor is KAlP2O7:Cr 3+ Furthermore, the infrared phosphor has a light emission wavelength of 820 to 850 nm. 3+ The infrared phosphor can ensure that it emits infrared light with a wavelength of 820-850nm, which is beneficial to improving the luminous efficiency of the external light-emitting device.

[0036] In the embodiment, the intensity ratio of blue light and red light formed after the blue light LED chip excites the fluoride red-pink fluorescent layer is 1: (1.2-2), preferably 1: (1.5-1.7). Within the intensity ratio range of blue light and red light provided in the embodiment of the present application, it can be ensured that the infrared light-emitting material layer achieves the optimal excitation efficiency under the synergistic excitation of red light and blue light, so the infrared light-emitting device has high luminous efficiency and good stability.

[0037] In an embodiment, a glue layer composed of a third silicone is also provided between the fluoride red-pink fluorescent layer and the infrared luminescent material layer, and the refractive index of the third silicone is between the refractive indexes of the first silicone and the second silicone. Specifically, the refractive index of the first silicone is less than that of the third silicone, and the refractive index of the third silicone is less than that of the second silicone. The first silicone is selected from methyl low-refractive silicone, the second silicone is selected from phenyl high-refractive silicone, and the third silicone is selected from medium-phenyl silicone. The refractive index of the first silicone is controlled to be less than that of the third silicone, and the refractive index of the third silicone is less than that of the second silicone, so as to ensure that more light can be refracted out, reduce the loss of internal reflection and refraction, and have high comprehensive luminous efficiency. In the embodiment of the present application, a glue layer is provided between the fluoride red-pink fluorescent layer and the infrared luminescent material layer as a buffer layer, which can improve the high temperature and high humidity reliability and the resistance to cold and hot shocks.

[0038] In the embodiment, the thickness of the glue layer is 10-100 μm, preferably 30-60 μm. Within the thickness range of the glue layer provided in the embodiment of the present application, the blue light and red light after the blue light LED chip excites the fluoride red-pink fluorescent film layer are less lost in the glue layer, and the overall luminous efficiency is high.

[0039] A second aspect of an embodiment of the present application provides a packaging method for an infrared light-emitting device, comprising the following steps:

[0040] S10: Provides blue LED chips;

[0041] S20: sequentially coating a fluoride red-pink fluorescent film layer and an infrared light-emitting material layer on the blue light LED chip to obtain an infrared light-emitting device.

[0042] The packaging method of the infrared light-emitting device provided in the embodiment of the present application can obtain an infrared light-emitting device with high luminous efficiency by sequentially coating a fluoride red-pink fluorescent film layer and an infrared light-emitting material layer on a blue light LED chip. The packaging method is simple in process, high in efficiency, low in cost, and suitable for industrial large-scale production, and therefore has broad application prospects.

[0043] In step S20, the method of sequentially coating the blue LED chip with a fluoride red-pink fluorescent film layer and an infrared luminescent material layer includes: first coating the blue LED chip with a fluoride red-pink fluorescent film layer, and then coating the infrared luminescent material layer.

[0044] In an embodiment, the method of sequentially coating a fluoride red-pink fluorescent film layer and an infrared luminescent material layer on a blue light LED chip further includes: first coating the fluoride red-pink fluorescent film layer on the surrounding side walls and the top of the blue light LED chip, and then coating the infrared luminescent material layer.

[0045] In an embodiment, the packaging method further comprises: forming a glue layer between the fluoride red-pink fluorescent film layer and the infrared luminescent material layer. In a specific embodiment, the fluoride red-pink fluorescent film layer is first coated on the side walls and the top of the blue light LED chip, then the glue layer is coated, and finally the infrared luminescent material layer is coated to obtain an infrared light-emitting device.

[0046] The following describes the invention in conjunction with specific embodiments.

[0047] Example 1

[0048] The embodiments of the present application provide an infrared light-emitting device and a packaging method thereof.

[0049] The components of the infrared light emitting device include: a blue light LED chip and a fluoride red-pink fluorescent film layer, a glue layer and an infrared light emitting material layer which are sequentially stacked on the blue light LED chip.

[0050] The wavelength of the blue LED chip is 450nm; the thickness of the fluoride red phosphor film layer is 100μm, and it is composed of fluoride red phosphor K2SiF6:Mn 4+ Composed of methyl low-refractive silica, fluoride red phosphor K2SiF6:Mn 4+ The mass ratio of the methyl low-fold silica gel is 1:1; the thickness of the adhesive layer is 10 μm, which is composed of medium-phenyl silica gel; the thickness of the infrared luminescent material layer is 100 μm, which is composed of infrared phosphor KAlP2O7:Cr 3+ Composed of phenyl high refractive index silica gel, infrared phosphor KAlP2O7:Cr 3+ The mass ratio of blue light to red light formed by the blue light LED chip exciting the fluoride red-pink fluorescent layer is 1:1.5; the infrared light peak wavelength of the infrared light emitting device is 820m, and the relative intensity of the infrared light is 130.

[0051] The packaging method of an infrared light emitting device comprises the following steps:

[0052] S10: Provides blue LED chips with a wavelength of 450nm;

[0053] S20: The blue LED chip is fixed on the bracket by using a bonding glue, and then a layer of silicone is applied on the chip by a chip mounter. A fluoride red-pink fluorescent film is attached to the side walls and top of the blue LED chip to form a fluoride red-pink fluorescent film layer. Then, medium-phenyl silicone is applied on the fluoride red-pink fluorescent film layer, and cured at high temperature to form a glue layer. Finally, infrared phosphor KAlP2O7:Cr is applied on the glue layer. 3+ and phenyl high-refractive silica gel, and solidified to obtain an infrared light-emitting device.

[0054] Example 2

[0055] The embodiments of the present application provide an infrared light-emitting device and a packaging method thereof.

[0056] The components of the infrared light emitting device include: a blue light LED chip and a fluoride red-pink fluorescent film layer, a glue layer and an infrared light emitting material layer which are sequentially stacked on the blue light LED chip.

[0057] The wavelength of the blue LED chip is 455nm; the thickness of the fluoride red phosphor film layer is 200μm, and it is composed of fluoride red phosphor K2SiF6:Mn 4+ Composed of methyl low-refractive silica, fluoride red phosphor K2SiF6:Mn 4+ The mass ratio of methyl low-fold silica gel is 1:3; the thickness of the adhesive layer is 100μm, which is composed of medium-phenyl silica gel; the thickness of the infrared luminescent material layer is 300μm, which is composed of infrared phosphor KAlP2O7:Cr 3+ Composed of phenyl high refractive index silica gel, infrared phosphor KAlP2O7:Cr 3+ The mass ratio of blue light to red light formed by the blue LED chip exciting the fluoride red-pink fluorescent layer is 1:1.2; the infrared light peak wavelength of the infrared light-emitting device is 850nm, and the relative intensity of the infrared light is 110.

[0058] The packaging method of the infrared light emitting device of this embodiment can refer to the packaging method of Embodiment 1.

[0059] Example 3

[0060] The embodiments of the present application provide an infrared light-emitting device and a packaging method thereof.

[0061] The components of the infrared light emitting device include: a blue light LED chip and a fluoride red-pink fluorescent film layer, a glue layer and an infrared light emitting material layer which are sequentially stacked on the blue light LED chip.

[0062] The wavelength of the blue LED chip is 452nm; the thickness of the fluoride red phosphor film layer is 150μm, and it is composed of fluoride red phosphor K2SiF6:Mn 4+Composed of methyl low-refractive silica, fluoride red phosphor K2SiF6:Mn 4+ The mass ratio of the methyl low-fold silica gel is 1:2; the thickness of the adhesive layer is 50 μm, which is composed of medium-phenyl silica gel; the thickness of the infrared luminescent material layer is 200 μm, which is composed of infrared phosphor KAlP2O7:Cr 3+ Composed of phenyl high refractive index silica gel, infrared phosphor KAlP2O7:Cr 3+ The mass ratio of blue light to red light formed by the blue LED chip exciting the fluoride red-pink fluorescent layer is 1:1.7; the infrared light peak wavelength of the infrared light emitting device is 835nm, and the relative intensity of the infrared light is 131.

[0063] The packaging method of the infrared light emitting device of this embodiment can refer to the packaging method of Embodiment 1.

[0064] Example 4

[0065] The embodiments of the present application provide an infrared light-emitting device and a packaging method thereof.

[0066] The components of the infrared light emitting device include: a blue light LED chip and a fluoride red-pink fluorescent film layer, a glue layer and an infrared light emitting material layer which are sequentially stacked on the blue light LED chip.

[0067] The wavelength of the blue LED chip is 452nm; the thickness of the fluoride red phosphor film layer is 150μm, and it is composed of fluoride red phosphor K2GeF6:Mn 4+ Composed of methyl low-fold silica gel, fluoride red phosphor K2GeF6:Mn 4+ The mass ratio of the methyl low-fold silica gel is 1:2; the thickness of the adhesive layer is 50 μm, which is composed of medium-phenyl silica gel; the thickness of the infrared luminescent material layer is 200 μm, which is composed of infrared phosphor KAlP2O7:Cr 3+ Composed of phenyl high refractive index silica gel, infrared phosphor KAlP2O7:Cr 3+ The mass ratio of blue light to red light formed by the blue LED chip exciting the fluoride red-pink fluorescent layer is 1:1.7; the infrared light peak wavelength of the infrared light emitting device is 835nm, and the relative intensity of the infrared light is 135.

[0068] The packaging method of the infrared light emitting device of this embodiment can refer to the packaging method of Embodiment 1.

[0069] Comparative Example

[0070] The comparative example of the present application provides an infrared light-emitting device and a packaging method thereof.

[0071] The infrared light-emitting device comprises: a blue light LED chip and a light-emitting material layer combined on the blue light LED chip; wherein the wavelength of the blue light LED chip is 452nm; the thickness of the light-emitting material layer is 150μm, and the fluoride red phosphor K2GeF6:Mn 4+ 、Infrared phosphor KAlP2O7:Cr 3+ and methyl low-refractive silica gel; the infrared light peak wavelength of the infrared light emitting device is 830nm, and the relative intensity of the infrared light is 100.

[0072] The packaging method of an infrared light emitting device comprises the following steps:

[0073] S10: Provides blue LED chips with a wavelength of 452nm;

[0074] S20: The blue LED chip is fixed on the bracket by using the bonding glue, and then a layer of silicone is applied on the chip by the placement machine, and the fluoride red phosphor K2GeF6:Mn is coated on the blue LED chip. 4+ 、Infrared phosphor KAlP2O7:Cr 3+ and methyl low-refractive silica gel, and cured to obtain an infrared light-emitting device.

[0075] Related performance test analysis:

[0076] 1. The luminous intensity of the infrared light-emitting device was measured using an LED luminous intensity tester. The test results are shown in Table 1 below.

[0077] Table 1

[0078]

[0079] As shown in Table 1, the luminous intensity of the infrared light-emitting device provided in Examples 1-4 is significantly higher than that of the comparative example, and the attenuation under high temperature and high humidity is small within 1000 hours, and the attenuation is significantly lower than that of the comparative example, indicating that the blue light LED chip excites the infrared phosphor through the red light and blue light after the fluoride red-pink fluorescent film layer, and has a good effect of exciting the infrared phosphor, and the infrared light-emitting device has high luminous efficiency and good high temperature and high humidity reliability. In addition, after 500 rounds of hot and cold shock cycles, the infrared light-emitting device provided in Examples 1-4 has no dead lamps and dead glue, but the infrared light-emitting device provided in the comparative example has dead lamps and cracked glue after 500 rounds of hot and cold shock cycles, indicating that the infrared light-emitting device provided in the embodiment of the present application has good hot and cold shock performance and good stability.

[0080] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. An infrared light emitting device, characterized in that: include: A blue LED chip and a fluoride red-pink fluorescent film layer and an infrared luminescent material layer arranged on the blue LED chip; The fluoride red-pink fluorescent film layer is located between the blue light LED chip and the infrared light-emitting material layer; the intensity ratio of blue light and red light formed after the blue light LED chip excites the fluoride red-pink fluorescent film layer is 1:(1.2-2).

2. The infrared light emitting device according to claim 1, characterized in that: The fluoride red-pink fluorescent film layer covers the surrounding side walls and the top of the blue light LED chip.

3. The infrared light emitting device according to claim 1, characterized in that: The fluoride red fluorescent film layer comprises fluoride red fluorescent powder and a first silica gel mixed with the fluoride red fluorescent powder, and the mass ratio of the fluoride red fluorescent powder to the first silica gel is 1:(1-3); and / or The infrared luminescent material layer includes infrared fluorescent powder and a second silica gel mixed with the infrared fluorescent powder, and the mass ratio of the infrared fluorescent powder to the second silica gel is 1:(1-2).

4. The infrared light emitting device according to claim 3, characterized in that: The fluoride red phosphor is selected from K2SiF6:Mn 4+ 、K2GeF6:Mn 4+ 、K2(Si,Ge)F6:Mn 4+ At least one of; and / or The infrared phosphor is KAlP2O7:Cr 3+ .

5. The infrared light emitting device according to claim 3, characterized in that: The emission peak wavelength of the blue LED chip is 450-455nm; and / or The fluoride red phosphor has a light emission wavelength of 620-630 nm; and / or The infrared phosphor has a light emission wavelength of 820-850 nm.

6. The infrared light emitting device according to claim 3, characterized in that: The thickness of the fluoride red-pink fluorescent film layer is 100-200 μm; and / or The thickness of the infrared luminescent material layer is 100-300 μm.

7. The infrared light emitting device according to any one of claims 3 to 6, characterized in that: A glue layer composed of a third silica gel is also provided between the fluoride red-pink fluorescent film layer and the infrared luminescent material layer, and the refractive index of the third silica gel is between the refractive index of the first silica gel and the second silica gel, and the thickness of the glue layer is 10-100 μm.

8. A packaging method for an infrared light-emitting device according to any one of claims 1 to 7, characterized in that: The following steps are involved: Providing the blue light LED chip; The fluoride red-pink fluorescent film layer and the infrared luminescent material layer are sequentially coated on the blue light LED chip to obtain an infrared luminescent device.

9. The packaging method of the infrared light emitting device according to claim 8, characterized in that: Also includes: A glue layer composed of silica gel is formed between the fluoride red-pink fluorescent film layer and the infrared luminescent material layer.

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