Detector and method for manufacturing the same

Abstract

The present invention provides a detector and a manufacturing method thereof, the detector comprising: a first substrate, a metal reflection layer located on the first substrate, the metal reflection layer having a metal reflection pattern; a microbridge unit structure located on the metal reflection layer; and a packaging structure located on the periphery of the microbridge unit structure, the packaging structure comprising a second substrate structure and a groove structure bonded to the second substrate structure; the groove structure comprising a sidewall forming the groove and a multilayer metal structure inside the groove, the height of the multilayer metal structure being lower than the depth of the groove; the second substrate structure comprising a second substrate and a multilayer metal structure located on the first surface of the second substrate, the multilayer metal structure on the first surface of the second substrate being bonded to the multilayer metal structure inside the groove. The detector has high product performance and reliability.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor integrated circuit manufacturing, and in particular to a detector and a manufacturing method thereof. Background Art

[0002] Micro Electro Mechanical System (MEMS) technology has been widely used in many fields including detection technology due to its many advantages such as small size, intelligence, executable, integrable, good process compatibility and low cost. The detector is a MEMS product that is widely used in the field of detection technology. It uses a sensitive material detection layer to absorb light and convert the absorbed light into electrical signals to achieve thermal imaging. The sensitive material detection layer is usually amorphous silicon or vanadium oxide. The thermal imaging function enables the detector to be used in places such as safety detection of power networks, detection of forest fires, and detection of human body temperature.

[0003] The detector process is generally not compatible with the complementary metal oxide semiconductor (CMOS) process, so it was difficult to achieve large-scale production in the early days. In recent years, as the market demand for MEMS products has gradually expanded, the concept of CMOS-MEMS has gradually been proposed. CMOS-MEMS uses CMOS technology to make peripheral reading and signal processing circuits, and then makes sensors and micromechanical system structures on the CMOS circuit. The process compatibility issue has always been the key to CMOS-MEMS technology.

[0004] Taking the uncooled detector as an example, its pixel uses a microbridge unit structure to form an electrical connection and a resonant cavity; after the production of the detector microbridge unit structure is completed, the general practice is to first perform dicing to separate the individual chips; then release, remove the sacrificial layer in the microbridge unit structure through a chemical reaction; finally, complete the vacuum and optical transmission structural requirements of the detector chip through packaging. However, although a high silicon wafer-level yield can be obtained through the statistical process control (SPC) control of the CMOS process, after the dicing is released, the microbridge unit structure of the entire chip pixel area is already suspended, which puts high demands on the packaging. Any improper operation will cause the microbridge unit structure to break. In fact, it often causes a high yield loss during the packaging process; at the same time, since anti-reflection film materials are required to enhance the transmission of the line and vacuum packaging is required, the required packaging cost is very high.

[0005] Therefore, how to provide a detector packaging solution to significantly improve product performance and reliability has become a technical problem that needs to be urgently solved in the industry. Summary of the invention

[0006] The present invention provides a detector and a manufacturing method thereof, which are used to improve the yield loss during packaging and greatly improve product performance and reliability.

[0007] In a first aspect, the present invention provides a detector, comprising: a first substrate, a metal reflective layer located on the first substrate, the metal reflective layer having a metal reflective pattern; a microbridge unit structure located on the metal reflective layer; and a packaging structure located at the periphery of the microbridge unit structure, the packaging structure comprising a second substrate structure and a groove structure bonded to the second substrate structure, the groove structure being located on the first substrate; the groove structure comprising side walls forming the groove and a multilayer metal structure inside the groove, the height of the multilayer metal structure being lower than the depth of the groove; the second substrate structure comprising a second substrate and a multilayer metal structure located on a second surface of the second substrate, the multilayer metal structure on the first surface of the second substrate being bonded to the multilayer metal structure inside the groove.

[0008] The beneficial effects of the detector provided by the embodiment of the present invention are as follows: a multi-layer metal structure is formed inside the groove by performing metal deposition and patterning inside the groove, and a corresponding multi-layer metal structure is formed using a second substrate, and the first substrate and the second substrate are bonded together through a molten metal layer to form a detector structure, thereby improving the yield loss during packaging and greatly improving product performance and reliability.

[0009] In a possible implementation, the detector further includes: a getter metal layer is arranged on the side of the multilayer metal structure of the second substrate structure, and the side is a side adjacent to the microbridge unit structure. When the encapsulation forms a vacuum cavity, gas will escape and cause the vacuum degree to decrease; the getter metal layer can absorb the gas to maintain a lower vacuum degree.

[0010] In another possible implementation, both the first surface of the second substrate and the second surface of the second substrate are provided with an anti-reflection film and a filter film, and a periodic metal pattern is provided on the first surface of the second substrate, and the second surface is located on the opposite side of the first surface. In this structure, the anti-reflection film is used to enhance the transmission of light, and the filter film is used to filter unnecessary light.

[0011] In other possible implementation schemes, the microbridge unit structure includes: a sensitive material detection layer, a metal electrode layer, and a release protection layer covering the sensitive material detection layer and the metal electrode layer, wherein the release protection layer is used to protect the sensitive material detection layer and the metal electrode layer. The release protection layer covers the sensitive material detection layer and the metal electrode, so that the sensitive material detection layer and the metal electrode can be effectively protected during the release process; at the same time, during the manufacturing process and the use process, the external pollution and damage are isolated to improve the reliability of the sensitive material detection layer; in addition, the short circuit of the metal electrode can also be avoided. In this way, the sensitive material detection layer and the metal electrode are protected by the release protection layer, which can prevent the sensitive material detection layer from being polluted or damaged.

[0012] In a possible implementation, the sidewalls forming the trench structure are dielectric layers or getter metal layers.

[0013] In a possible implementation, the material of the getter metal layer is an alloy including vanadium and titanium.

[0014] In other possible implementation schemes, the multilayer metal structure inside the groove structure includes a titanium layer, a titanium nitride layer and an aluminum layer stacked in sequence along a direction away from the first substrate; or, the multilayer metal structure inside the groove structure includes a gold layer, a copper layer and a titanium layer stacked in sequence along a direction away from the first substrate.

[0015] In one possible implementation, the multilayer metal structure of the second substrate structure includes a titanium layer, a titanium nitride layer and a germanium layer stacked in sequence in a direction away from the second substrate, or the multilayer metal structure of the second substrate structure includes a titanium layer, a copper layer and a gold layer stacked in sequence in a direction away from the second substrate.

[0016] In a possible implementation, the anti-reflection film and the filter film include one or more materials selected from the group consisting of germanium and zinc selenide.

[0017] In a second aspect, an embodiment of the present invention further provides a method for manufacturing a detector, the method comprising: sequentially forming a metal reflective layer and a microbridge unit structure on a first substrate; spin coating an organic compound on the first substrate; graphically forming a groove structure located at the periphery of the detector, the groove structure comprising a side wall forming the groove and a multilayer metal structure inside the groove, the height of the multilayer metal structure being lower than the depth of the groove;

[0018] The suspended microbridge unit structure is released; a second substrate structure is formed, the second substrate structure includes a second substrate and a multilayer metal structure located on the first surface of the second substrate; the multilayer metal structure on the first surface of the second substrate and the multilayer metal structure inside the groove are bonded to each other to form a closed cavity.

[0019] The beneficial effects of the manufacturing method provided by the embodiment of the present invention are as follows: after completing the microbridge unit structure, the scheme performs electrical testing, then uses low-stress organic compounds to spin-coat on the first substrate, and patterns to form a groove structure, and then uses the second substrate to form a structure corresponding to the groove structure, and then the first substrate and the second substrate are melt-bonded together to form the packaging structure of the entire detector, thereby realizing the chip-level vacuum structure of the detector product, solving the yield loss when the detector is released from the package, reducing the packaging cost, and greatly improving the product performance and reliability.

[0020] In a possible implementation, after forming the second substrate structure, before bonding the multilayer metal structure on the first surface of the second substrate and the multilayer metal structure inside the groove, the method further includes: forming a getter metal layer on the side of the multilayer metal structure of the second substrate structure, the side being a side adjacent to the microbridge unit structure. The getter metal layer is used to adsorb gas to maintain a relatively low vacuum degree.

[0021] In another possible implementation, after forming the second substrate structure, before bonding the multilayer metal structure on the first surface of the second substrate and the multilayer metal structure inside the groove, it also includes: forming an anti-reflection film and a filter film on both the second surface and the first surface of the second substrate, and the second surface is located on the opposite side of the first surface.

[0022] In a possible implementation, after forming an anti-reflection film and a filter film on the second surface of the second substrate, the method further includes: forming a periodic metal pattern on the second surface of the second substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A schematic cross-sectional structure diagram of a photoelectric detector provided by the present invention;

[0024] Figure 2 The present invention provides Figure 1 Schematic diagram of the three-dimensional structure of the photodetector;

[0025] Figure 3 A schematic flow chart of a method for manufacturing a photoelectric detector provided by the present invention;

[0026] FIG. 4A to FIG. 4D For execution Figure 3 A cross-sectional schematic diagram of S301 is shown;

[0027] Figure 4E For execution Figure 3 The cross-sectional schematic diagram after S302 is shown;

[0028] Figure 4F For execution Figure 3 A cross-sectional schematic diagram of the groove formed after S303 is shown;

[0029] Figure 4G For execution Figure 3 The cross-sectional schematic diagram of the groove structure formed after S303 is shown;

[0030] Figure 4H For execution Figure 3 The cross-sectional schematic diagram after S304 is shown.

[0031] Description of figure markings:

[0032] 101 first substrate; 102 metal reflective layer; 103 dielectric layer;

[0033] 200 microbridge unit structure; 201 first release protection layer; 202 sensitive material detection layer; 203 metal electrode; 204 second release protection layer; 205 anti-reflection material layer;

[0034] 300 groove structure; 301 side wall; 302 multi-layer metal structure;

[0035] 400 second substrate structure; 401 second substrate; 402 multilayer metal structure; 403 getter metal layer; 404 antireflection film; 405 filter film; 406 metal pattern DETAILED DESCRIPTION

[0036] The technical solutions in the embodiments of the present invention are described below in conjunction with the drawings in the embodiments of the present invention. Among them, in the description of the embodiments of the present invention, the terms used in the following embodiments are only for the purpose of describing specific embodiments, and are not intended to be used as limitations on the present invention. As used in the specification of the present invention and the appended claims, the singular expressions "a", "said", "above", "the" and "this" are intended to also include expressions such as "one or more", unless there is a clear contrary indication in the context. It should also be understood that in the following embodiments of the present invention, "at least one", "one or more" refer to one or more than two (including two). The term "and / or" is used to describe the association relationship of associated objects, indicating that three relationships can exist; for example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone, where A and B can be singular or plural. The character " / " generally indicates that the objects associated before and after are in an "or" relationship.

[0037] References to "one embodiment" or "some embodiments" etc. described in this specification mean that one or more embodiments of the present invention include specific features, structures or characteristics described in conjunction with the embodiment. Therefore, the statements "in one embodiment", "in some embodiments", "in some other embodiments", "in some other embodiments", etc. that appear in different places in this specification do not necessarily refer to the same embodiment, but mean "one or more but not all embodiments", unless otherwise specifically emphasized in other ways. The terms "including", "comprising", "having" and their variations all mean "including but not limited to", unless otherwise specifically emphasized in other ways. The term "connection" includes direct connection and indirect connection, unless otherwise specified. "First" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated.

[0038] In the embodiments of the present invention, words such as "exemplarily" or "for example" are used to indicate examples, illustrations or explanations. Any embodiment or design described as "exemplarily" or "for example" in the embodiments of the present invention should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplarily" or "for example" is intended to present related concepts in a specific way.

[0039] The present invention provides a detector. Figure 1 (a) shows a cross-sectional view of the detector. Figure 1 (b) is Figure 1 In (a), an enlarged view of the microbridge unit structure is shown, where the detector comprises: a first substrate 101; a metal reflective layer 102 covering the first substrate 101, wherein the metal reflective layer 102 has a metal reflective pattern; and a microbridge unit structure 200 located on the metal reflective layer 102.

[0040] The microbridge unit structure 200 includes, in sequence: a first release protection layer 201, a sensitive material detection layer 202, a metal electrode layer 203, a second release protection layer 204 and an anti-reflection material layer 205; the second release protection layer 204 structurally covers the sensitive material detection layer 202 and the metal electrode layer 203 to protect the sensitive material detection layer 202 and the metal electrode layer 203. Exemplarily, the metal reflective layer 102 can be made of aluminum. The material of the sensitive material detection layer 202 can be amorphous silicon or vanadium oxide. In one embodiment of the present invention, the metal electrode layer 203 can be one or a combination of a titanium electrode, a tantalum electrode, a stacked titanium nitride and titanium electrode, and a stacked tantalum and tantalum nitride electrode.

[0041] In one embodiment of the present invention, the first release protection layer 201 and the second release protection layer 204 may be thin films based on silicon, oxygen, carbon, nitrogen and other components such as silicon dioxide (SiO2), silicon oxynitride (SiON), silicon nitride (SiN), silicon carbide (SiC), etc., or may be the above-mentioned thin films with non-stoichiometric ratios, such as oxygen-rich or silicon-rich silicon dioxide film layers, or may be the above-mentioned thin films doped with impurity elements such as boron, phosphorus, carbon or fluorine, such as fluorosilicate glass (FSG), borosilicate glass (BPSG) or phosphorus silicon glass (PSG), etc., as well as composite film layers composed of the above-mentioned materials.

[0042] In a possible implementation, a dielectric layer 103 may be included between the metal reflective patterns of the metal reflective layer 102, and the height of the dielectric layer 103 is consistent with the height of the metal reflective layer 102. Specifically, the dielectric layer 103 may be made of silicon dioxide, silicon oxynitride, or silicon dioxide or silicon oxynitride doped with impurity elements such as fluorine.

[0043] The detector further includes a packaging structure located at the periphery of the microbridge unit structure 200 . The packaging structure includes a groove structure 300 located on the first substrate 101 , and a second substrate structure 400 bonded to the groove structure 300 .

[0044] In a specific embodiment, the groove structure 300 around the microbridge unit structure 200 may include: a sidewall 301 forming the groove and a multilayer metal structure 302 inside the groove. Optionally, the height H of the multilayer metal structure 302 is lower than the depth D of the groove, so that the metal can be prevented from overflowing from the sidewall 301 due to heat melting when bonding occurs.

[0045] Optionally, the multilayer metal structure 302 inside the groove structure 300 includes a titanium layer 3011, a titanium nitride layer 3012 and an aluminum layer 3013 stacked in sequence along a direction away from the first substrate; or, the multilayer metal structure 302 inside the groove structure 300 includes a gold layer 3011, a copper layer 3012 and a titanium layer 3013 stacked in sequence along a direction away from the first substrate 101.

[0046] In a specific implementation, the sidewall 301 forming the trench structure 300 is a dielectric layer or a getter metal layer. Exemplarily, the material of the getter metal layer is an alloy including vanadium and titanium.

[0047] In another specific embodiment, the second substrate structure 400 outside the microbridge unit structure 200 includes a second substrate 401 and a multilayer metal structure 402 located on a first surface of the second substrate 401, and the multilayer metal structure 402 on the first surface of the second substrate 401 is bonded to the multilayer metal structure 301 inside the groove. Optionally, the multilayer metal structure 402 of the second substrate structure 400 includes a titanium layer 4021, a titanium nitride layer 4022, and a germanium layer 4023 stacked in sequence in a direction away from the second substrate 401, or the multilayer metal structure of the second substrate structure 400 includes a titanium layer 4021, a copper layer 4021, and a gold layer 4023 stacked in sequence in a direction away from the second substrate 401.

[0048] In a specific embodiment, a getter metal layer 403 is provided on the side of the multilayer metal structure 402 of the second substrate structure 400, and the side is the side adjacent to the microbridge unit structure 200. When the encapsulation forms a vacuum cavity, gas will escape and cause the vacuum degree to decrease; the getter metal layer 403 can be used to adsorb gas to maintain a lower vacuum degree. The multilayer metal structure of the second substrate structure 400 is a germanium layer, a titanium nitride layer, and a titanium layer in sequence from the side adjacent to the first substrate, or the metal layer structure of the second substrate structure is a combination of a gold layer, a copper layer, and a titanium layer.

[0049] In a specific embodiment, the first surface of the second substrate 401 adjacent to the first substrate 101 and the second surface away from the first substrate 101 are both provided with an anti-reflection film 404 and a filter film 405. In this structure, the anti-reflection film 404 is used to enhance the transmission of the line, and the filter film 405 is used to filter unnecessary light. Optionally, a periodic metal pattern 406 may also be provided on the second surface of the second substrate structure 400 away from the first substrate 101. Exemplarily, the anti-reflection film 404 and the filter film 405 include one or more of germanium and zinc selenide materials.

[0050] Figure 2 The schematic diagram of the three-dimensional structure of the packaged detector is shown as an example. Figure 1 and Figure 2 It can be seen that the detector structure formed by forming a multi-layer metal structure inside the groove by performing metal deposition and patterning inside the groove, and using the second substrate to form a corresponding multi-layer metal structure, and bonding the first substrate and the second substrate together through a molten metal layer can improve the yield loss during packaging and greatly improve product performance and reliability.

[0051] refer to Figure 3 The present invention also provides a method for manufacturing a detector, comprising the following steps:

[0052] S301 , forming a metal reflective layer 102 and a micro-bridge unit structure 200 in sequence on a first substrate 101 .

[0053] Specifically, if Figure 4A As shown, a metal reflective layer 102 can be formed and patterned on a first substrate 101 by physical vapor deposition technology. The metal material of the metal reflective layer 102 can be aluminum (Al), platinum (Pt), etc. Then, grooves are engraved on the metal reflective layer 102 by photolithography, etching, etc. to form a metal reflective pattern, thereby forming a resonant cavity structure inside the photodetector pixel to facilitate the absorption of light. Afterwards, in this embodiment, a dielectric layer 103 can be filled between each metal reflective pattern of the metal reflective layer 102 and the dielectric layer can be flattened. The dielectric material used for the dielectric layer 103 can be one or a combination of silicon dioxide, silicon oxynitride, silicon nitride and silicon carbide, and / or one or a combination of silicon dioxide, silicon oxynitride, silicon nitride and silicon carbide doped with impurity elements such as boron, phosphorus, carbon or fluorine.

[0054] The specific formation process of the microbridge unit structure 200 may include the following steps: a film may be formed on the dielectric layer 103 as a sacrificial layer 104 by coating or other film forming processes, such as Figure 4A In one embodiment of the present invention, the material of the sacrificial layer 104 may be silicon or polyimide. Afterwards, a through hole 01 may be etched on the sacrificial layer 104 to form a support groove; then, a first release protection layer 201 and a sensitive material detection layer 202 may be deposited in sequence, and the first release protection layer 201 and the sensitive material detection layer 202 may be patterned. Figure 4B As shown, a metal electrode 203 is deposited on the surface of the sensitive material detection layer 202 to achieve electrical contact, and then the metal electrode 203 is patterned; then, a second release protection layer 204 is deposited. The second release protection layer 204 covers the sensitive material detection layer 202 and the metal electrode 203, so that the sensitive material detection layer 202 and the metal electrode 203 can be effectively protected during the release process; at the same time, during the manufacturing process and the use process, the external pollution and damage are isolated, and the reliability of the sensitive material detection layer 202 is improved; in addition, the short circuit of the metal electrode 203 can also be avoided. Optionally, a reflective material layer 205 can also be deposited, such as Figure 4D As shown, based on the above steps, the unit structure 200 of the detector of the present invention is finally realized as shown in FIG. Figure 4D shown.

[0055] S302 , spin-coating an organic compound 206 on the first substrate 101 .

[0056] Wherein, the spin-coated organic compound 206, such as Figure 4EThe organic compound may be polyimide (PI), and the stress of the polyimide is lower than the stress of the sacrificial layer 104, so that the entire structure and product may not be affected by excessive stress.

[0057] S303, patterning the organic compound 206 to form a groove, forming a groove structure 300 located at the periphery of the detector, the groove structure 300 includes a side wall 302 forming the groove and a multilayer metal structure 301 inside the groove, and the height of the multilayer metal structure 301 is lower than the depth of the groove.

[0058] For example, Figure 4F As shown, the organic compound 206 is patterned to form a groove a, and then a multi-layer metal is deposited and patterned to remove the multi-layer metal outside the groove a, leaving only the multi-layer metal in the groove a, and making the height of the multi-layer metal in the groove a lower than the height of the groove sidewall 302, depositing the sidewall 302 and the multi-layer metal structure 301, and patterning to form a structure as shown in FIG. Figure 4G The semiconductor structure shown.

[0059] S304, releasing the suspended micro-bridge unit structure.

[0060] Exemplarily, the sacrificial layer 104 and the organic compound 206 are removed to release the semiconductor structure after the structure of the first substrate is completed. Figure 4H shown.

[0061] S305 , forming a second substrate structure 400 , the second substrate structure comprising a second substrate 401 and a multilayer metal structure 402 located on a first surface of the second substrate 401 .

[0062] For example, Figure 1 As shown, the second substrate structure 400 includes a second substrate 401 and a multi-layer metal structure 402 located on a first surface of the second substrate 401 .

[0063] S306 , bonding the multi-layer metal structure 402 on the first surface of the second substrate and the multi-layer metal structure 301 inside the trench.

[0064] In one possible implementation, after forming the second substrate structure, before bonding the multilayer metal structure on the first surface of the second substrate and the multilayer metal structure inside the groove, a getter metal layer 403 is formed on the side of the multilayer metal structure 402 of the second substrate structure 400, wherein the side is adjacent to the microbridge unit structure 200.

[0065] In another possible implementation, after forming the second substrate structure, before bonding the multi-layer metal structure on the first surface of the second substrate and the multi-layer metal structure inside the groove, an anti-reflection film 404 and a filter film 405 are formed on the second surface and the first surface of the second substrate structure 400. Optionally, after forming the anti-reflection film and the filter film on the second surface of the second substrate, a periodic metal pattern 406 is formed on the second surface of the second substrate structure 400. Exemplarily, the metal pattern 406 may be a periodic circular or elliptical thin-layer Au (or Ag, Pt, etc.) pattern.

[0066] It is worth noting that the anti-reflection film 404 and the filter film 405 on the second surface and the first surface of the second substrate can be formed simultaneously or sequentially. For example, in one embodiment, the anti-reflection film 404 and the filter film 405 can be formed sequentially on the second surface of the second substrate first, and then the metal pattern 406 can be formed on the second surface of the second substrate. Further, the anti-reflection film 404 and the filter film 405 can be formed sequentially on the first surface of the second substrate, and then the multi-layer metal structure 402 can be formed on the first surface of the second substrate. In another embodiment, after the anti-reflection film 404 and the filter film 405 are formed on the second surface and the first surface of the second substrate at the same time, the metal pattern 406 can be formed on the second surface of the second substrate, and further, the multi-layer metal structure 402 can be formed on the first surface of the second substrate. It should be understood that according to process requirements, after the anti-reflection film 404 and the filter film 405 are formed on the second surface and the first surface of the second substrate, the multi-layer metal structure 402 can be formed on the first surface of the second substrate first, and then the metal pattern 406 on the second surface of the second substrate can be formed.

[0067] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

[0068] In short, the above is only a preferred embodiment of the technical solution of the present invention, and is not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A detector, It is characterized in that include: a first substrate; a metal reflective layer located on the first substrate, the metal reflective layer having a metal reflective pattern; A microbridge unit structure located on the metal reflective layer; and a packaging structure located at the periphery of the micro-bridge unit structure, the packaging structure comprising a second substrate structure and a groove structure bonded to the second substrate structure, the groove structure being located on the first substrate; The trench structure includes a sidewall forming the trench and a multi-layer metal structure inside the trench, wherein the height of the multi-layer metal structure is lower than the depth of the trench; The second substrate structure includes a second substrate and a multi-layer metal structure located on a first surface of the second substrate, and the multi-layer metal structure on the first surface of the second substrate is bonded to the multi-layer metal structure inside the groove.

2. The detector according to claim 1, It is characterized in that Also includes: A getter metal layer is arranged on a side of the multilayer metal structure of the second substrate structure, and the side is a side adjacent to the micro-bridge unit structure.

3. The detector according to claim 1, It is characterized in that An anti-reflection film and a filter film are provided on the first surface of the second substrate and the second surface of the second substrate, and the second surface is located on the opposite side of the first surface.

4. The detector according to claim 3, It is characterized in that A periodic metal pattern is arranged on the second surface of the second substrate.

5. The detector according to any one of claims 1 to 4, It is characterized in that The microbridge unit structure comprises: A first release protection layer, a sensitive material detection layer, a metal electrode layer, and a second release protection layer covering the sensitive material detection layer and the metal electrode layer, wherein the second release protection layer is used to protect the sensitive material detection layer and the metal electrode layer.

6. The detector according to any one of claims 1 to 4, It is characterized in that The sidewalls forming the trench structure are dielectric layers or getter metal layers.

7. The detector according to claim 6, It is characterized in that The material of the getter metal layer is an alloy including vanadium and titanium metals.

8. The detector according to any one of claims 1 to 4, It is characterized in that The multilayer metal structure inside the groove structure includes a titanium layer, a titanium nitride layer and an aluminum layer stacked in sequence in a direction away from the first substrate; or, the multilayer metal structure inside the groove structure includes a gold layer, a copper layer and a titanium layer stacked in sequence in a direction away from the first substrate.

9. The detector according to any one of claims 1 to 4, It is characterized in that The multilayer metal structure of the second substrate structure includes a titanium layer, a titanium nitride layer and a germanium layer stacked in sequence in a direction away from the second substrate, or the multilayer metal structure of the second substrate structure includes a titanium layer, a copper layer and a gold layer stacked in sequence in a direction away from the second substrate.

10. The detector according to claim 3, It is characterized in that The anti-reflection film and the filter film include one or more materials selected from the group consisting of germanium and zinc selenide.

11. A method for manufacturing a detector, It is characterized in that The method comprises: forming a metal reflective layer and a microbridge unit structure in sequence on the first substrate; spin coating an organic compound on the first substrate; The organic compound is patterned to form a groove a, and a groove structure located at the periphery of the detector is deposited in the groove a, wherein the groove structure includes a side wall forming the groove and a multi-layer metal structure inside the groove, and the height of the multi-layer metal structure is lower than the depth of the groove; releasing the suspended microbridge unit structure; forming a second substrate structure, the second substrate structure comprising a second substrate and a multilayer metal structure located on a first surface of the second substrate; The multi-layer metal structure on the first surface of the second substrate and the multi-layer metal structure inside the groove are bonded to each other to form a closed cavity.

12. The method according to claim 11, It is characterized in that After forming the second substrate structure, before bonding the multi-layer metal structure on the first surface of the second substrate and the multi-layer metal structure inside the trench, the method further includes: A getter metal layer is formed on a side of the multilayer metal structure of the second substrate structure, wherein the side is adjacent to the microbridge unit structure.

13. The method according to claim 11, It is characterized in that After forming the second substrate structure, before bonding the multi-layer metal structure on the first surface of the second substrate and the multi-layer metal structure inside the trench, the method further includes: An anti-reflection film and a filter film are formed on both the first surface of the second substrate and the second surface of the second substrate, and the second surface is located at an opposite side of the first surface.

14. The method according to claim 13, It is characterized in that After forming an anti-reflection film and a filter film on the second surface of the second substrate, the method further includes: A periodic metal pattern is formed on the second surface of the second substrate.

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