Semiconductor laser micro-lens adjusting device in visible light band

Abstract

The visible light waveband semiconductor laser microlens assembling and adjusting device belongs to the technical field of semiconductor laser optical assembling and adjusting, and is characterized in that a six-dimensional optical adjusting frame, a helium-neon laser system, an imaging monitoring system, a light spot image acquisition system, a beam quality detection system, a beam splitter, a focusing mirror I, a focusing mirror II and a laser heat sink are arranged on an optical platform, a lens clamp is arranged on the optical adjusting frame, and a semiconductor laser is arranged on the laser heat sink. The helium-neon laser is used to adjust the angle of the microlens, and the laser emitted by the semiconductor laser is used to irradiate on the beam quality analyzer and the CMOS to test the index and the collected image, so that the microlens is adjusted to the best position, and the assembling and adjusting precision is high.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor laser optical alignment, in particular to a micro-lens alignment device for visible light band semiconductor laser. BACKGROUND

[0002] With the progress of laser technology, semiconductor lasers are increasingly applied in manufacturing, communication, measurement and other fields.

[0003] After the semiconductor laser light is emitted from the chip, it is transmitted in space as an elliptical beam with uneven divergence angle. The direction with small divergence angle is called slow axis, and the divergence angle is about 10°. The direction with large divergence angle is called fast axis, and the divergence angle can reach more than 35°. The fast axis and the slow axis are perpendicular to each other.

[0004] Because the divergence angle of the laser light-emitting chip in the fast axis is large, a focusing lens is usually used to collimate the fast and slow axes of the light beam emitted by the light-emitting chip.

[0005] Under normal circumstances, the semiconductor laser light-emitting surface is small, and the collimating lens size is also small, which is called micro-lens. The alignment precision is also high, so a high-precision installation and adjustment device is needed for alignment.

[0006] In recent years, with the progress of technology, visible light band (such as blue light) semiconductor lasers are developing faster and faster, and are increasingly applied in processing, communication and other fields. The optical technology of visible light band semiconductor lasers is similar to that of traditional infrared semiconductor lasers, but there are also some differences. SUMMARY

[0007] The technical problem to be solved by the present application is to provide a micro-lens alignment device for visible light band semiconductor laser, which adjusts the angle of the micro-lens by using the laser emitted by a helium-neon laser, and then tests the indicators of the laser emitted by the semiconductor laser after passing through the micro-lens on the beam quality analyzer, and the image collected on the CMOS, so as to adjust the micro-lens to the best position, and has high alignment precision.

[0008] The visible light waveband semiconductor laser microlens assembling and adjusting device comprises an optical platform, characterized in that: a six-dimensional optical adjusting frame, a helium-neon laser system, an imaging monitoring system, a light spot image acquisition system, a beam quality detection system, a beam splitter, a focusing mirror I, a focusing mirror II and a laser heat sink are arranged on the optical platform; a lens clamp is arranged on the optical adjusting frame; a semiconductor laser is arranged on the laser heat sink; a light emitting point of the semiconductor laser, a center point of the beam splitter and a center point of the focusing mirror II are on the same axis I as a detection light beam point received by the beam quality detection system; a mirror surface of the beam splitter is at an angle of 45° with the axis I; a center of the beam splitter, a center of the focusing mirror I and a focal point of the light spot image acquisition system are on the same axis II, the axis II and the axis I are in the same horizontal plane and perpendicular to each other.

[0009] The helium-neon laser system comprises a helium-neon laser, a helium-neon laser support and a helium-neon laser clamp; the helium-neon laser support is fixed on a threaded hole on the surface of the optical platform by a screw; one end of the helium-neon laser clamp clamps the helium-neon laser support and the other end clamps the helium-neon laser; the helium-neon laser emits laser parallel to the surface of the optical platform.

[0010] The imaging monitoring system comprises a camera and a lens, an imaging system support, an imaging system base and an imaging system clamp; the imaging system base is fixed on a threaded hole on the surface of the optical platform by a screw; the imaging system support is two cross circular rods connected by a connecting piece; the vertical circular rod is inserted into the imaging system base and fastened by a screw; the horizontal circular rod is connected with the imaging system clamp by a screw; the imaging system clamp clamps the imaging camera and the lens.

[0011] The light spot image acquisition system comprises a CMOS photosensitive element, an acquisition system support and an acquisition system base; the acquisition system base is fixed on a threaded hole on the surface of the optical platform by a screw; the acquisition system support is connected with the acquisition system base by a screw; the CMOS photosensitive element is connected with the acquisition system support by a screw.

[0012] The beam quality detection system comprises a beam quality analyzer, a detection system support and a detection system base; the detection system base is fixed on a threaded hole on the surface of the optical platform by a screw; the detection system support is connected with the detection system base by a screw; the beam quality analyzer is connected with the detection system support by a screw.

[0013] The focusing mirror I and the focusing mirror II are both convex lenses.

[0014] The laser emitted by the semiconductor laser passes through the beam splitter, and the visible light of 400-700nm is divided into reflected light and transmitted light, the reflected light passes through the focusing mirror I and is irradiated onto the CMOS photosensitive element, and the transmitted light passes through the focusing mirror II and is irradiated onto the detection hole of the beam quality analyzer.

[0015] The photosensitive waveband of the CMOS photosensitive element is the visible light waveband of 400-700nm.

[0016] Through the above design scheme, the visible light waveband semiconductor laser microlens adjustment device can bring the following beneficial effects: the angle of the microlens is adjusted by the laser emitted by the helium-neon laser, and then the index of the laser emitted by the semiconductor laser after passing through the microlens and irradiated on the beam quality analyzer for testing and the image collected on the CMOS are used to adjust the microlens to the best position, so that the adjustment precision is high. BRIEF DESCRIPTION OF DRAWINGS

[0017] The application will be further described below in combination with the drawings and specific embodiments:

[0018] Figure 1 The figure is a structural schematic view of the visible light waveband semiconductor laser microlens adjustment device.

[0019] Figure 2 The figure is a structural schematic view of the visible light waveband semiconductor laser microlens adjustment device from the side.

[0020] In the figure, 1 is a six-dimensional optical adjustment frame, 2 is a lens clamp, 3 is a helium-neon laser system, 4 is an imaging monitoring system, 5 is a light spot image acquisition system, 6 is a beam quality detection system, 7 is a beam splitter, 8 is a focusing mirror I, 9 is a focusing mirror II, 10 is an optical platform, 11 is a laser heat sink, and 12 is a semiconductor laser. DETAILED DESCRIPTION

[0021] The visible light waveband semiconductor laser microlens adjustment device, as shown in Figure 1 and Figure 2 , comprises a six-dimensional optical adjustment frame 1, a lens clamp 2, a helium-neon laser system 3, an imaging monitoring system 4, a light spot image acquisition system 5, a beam quality detection system 6, a beam splitter 7, a focusing mirror I 8, a focusing mirror II 9, an optical platform 10, a laser heat sink 11, and a semiconductor laser 12.

[0022] The helium-neon laser system 3 includes a helium-neon laser 31, a helium-neon laser support 32, and a helium-neon laser clamp 33. The helium-neon laser support 32 is fixed on the screw hole on the surface of the optical platform 10 by a screw. The helium-neon laser clamp 33 clamps the helium-neon laser support 32 at one end and clamps the helium-neon laser 31 at the other end. The helium-neon laser 31 is adjusted in angle by a level, so that the emitted laser is parallel to the surface of the optical platform 10.

[0023] The imaging monitoring system 4 includes a camera and lens 41, an imaging system support 42, an imaging system base 43, and an imaging system clamp 44. The imaging system base 43 is fixed on the screw hole on the surface of the optical platform 10 by a screw. The imaging system support 42 is a cross-shaped circular rod, which is connected by a connecting piece and inserted into the imaging system base 43 in the vertical direction and clamped by a screw. The horizontal circular rod of the imaging system support is connected to the imaging system clamp 44 by a screw. The imaging system clamp 44 clamps the imaging camera and lens 41. The imaging camera and lens 41 image and shoot the image near the light emitting point of the semiconductor laser 12 below.

[0024] The spot image collection system 5 includes a CMOS photosensitive element 51, a collection system support 52, and a collection system base 53. The collection system base 53 is fixed on the screw hole on the surface of the optical platform 10 by a screw. The collection system support 52 is connected to the collection system base 53 by a screw. The CMOS photosensitive element 51 is connected to the collection system support 52 by a screw.

[0025] The beam quality detection system 6 includes a beam quality analyzer 61, a detection system support 62, and a detection system base 63. The detection system base 63 is fixed on the screw hole on the surface of the optical platform 10 by a screw. The detection system support 62 is connected to the detection system base 63 by a screw. The beam quality analyzer 61 is connected to the detection system support 62 by a screw.

[0026] The six-dimensional optical adjustment frame 1, the beam splitter 7, the focusing mirror I 8, the focusing mirror II 9, and the laser heat sink 11 are fixed on the screw holes on the surface of the optical platform 10 by screws.

[0027] The lens clamp 2 is installed on the six-dimensional optical adjustment frame 1 by a connecting piece and a screw. By adjusting the knobs on the six-dimensional optical adjustment frame, the six-dimensional direction adjustment of the clamped object at the end of the lens clamp 2 is realized.

[0028] The semiconductor laser 12 is fixed on the upper surface of the laser heat sink 11 by a screw.

[0029] The laser emitted by the helium-neon laser 31 serves as the reference light.

[0030] The light emitting point of the semiconductor laser 12, the center of the beam splitter 7, the center of the focusing lens II 9 and the beam quality analyzer 61 are on the same axis, which is referred to as axis I, and is parallel to the laser emitted by the helium-neon laser 31 and slightly lower than the laser.

[0031] After the positions of the semiconductor laser 12, the beam splitter 7, the focusing lens II 9 and the beam quality analyzer 61 are adjusted, the positions are fixed according to the light emitted by the helium-neon laser 31. Since the reference light is parallel to the axis I, the light passing through the focusing lens II 9 will also be irradiated on the detection hole of the beam quality analyzer 61.

[0032] The beam splitter 7 is a plane mirror, and for 400-700nm visible light incident at 45°, a part is reflected and a part is transmitted, and the axis I is at 45°.

[0033] The center of the beam splitter 7, the focusing lens I 8 and the CMOS photosensitive element 51 are on the same axis, which is referred to as axis II. The focusing lens I 8 is a convex lens, and the focal point is on the photosensitive surface of the CMOS photosensitive element 51.

[0034] The axis I and the axis II are at the same height and form a 90° angle.

[0035] The laser light axis emitted by the semiconductor laser 12 passes through the beam splitter 7, and a part of the light is reflected and then irradiated on the photosensitive surface of the CMOS photosensitive element 51 through the focusing lens I 8, and the other part of the light is transmitted and then irradiated on the detection hole of the beam quality analyzer 61 through the focusing lens II 9.

[0036] The photosensitive waveband of the CMOS photosensitive element 51 is 400-700nm visible light waveband, and the laser emitted by the semiconductor laser and irradiated on the photosensitive surface can be collected and imaged.

[0037] The camera and lens 41 are focused near the light emitting point of the semiconductor laser 12, and the target image is magnified by 10 times for shooting.

[0038] As shown in Figure 1 The six-dimensional optical adjustment frame 1 can be a manual adjustment frame or an electric adjustment frame, and the object clamped at the end of the lens clamp 2 can be adjusted in six-dimensional directions of x, y, z, Rx, Ry and Rz.

[0039] The adjustment method of the application is as follows:

[0040] After the microlens is clamped by the lens clamp 2, the microlens is first placed slightly higher than the semiconductor laser 12 on the reference light emitted by the helium-neon laser 31, the angle of the microlens is adjusted by the six-dimensional optical adjustment frame 1, and the angle adjustment is completed when the microlens is perpendicular to the reference light according to the spot shape of the light passing through the microlens.

[0041] The position of the microlens is adjusted near the light emitting point of the semiconductor laser 12 by using a six-dimensional optical adjusting frame 1. The laser emitted by the semiconductor laser passes through the microlens, then passes through the beam splitter 7, the focusing lens I 8 and the focusing lens II 9, and is focused on the light receiving surface of the CMOS light receiving element 51 and the detection hole of the beam quality analyzer 61, respectively. The position of the microlens is finely adjusted, and the position adjustment is completed when the best collimation effect is obtained according to the collected light spot shape and the measured beam quality.

[0042] Then, the relative position of the microlens and the semiconductor laser can be fixed by using an ultraviolet curing process or the like.

[0043] The device uses digitized and visualized parameters to judge the collimation effect of the semiconductor laser 12 after passing through the microlens. The adjustment precision can be effectively improved in the microlens collimation process of the semiconductor laser in the visible light band.

Claims

1. A microlens assembly and adjustment device for a visible light semiconductor laser, comprising an optical platform (10), characterized in that: The optical platform (10) is provided with a six-dimensional optical adjustment frame (1), a helium-neon laser system (3), an imaging monitoring system (4), a light spot image acquisition system (5), a beam quality detection system (6), a beam splitter (7), a focusing mirror I (8), a focusing mirror II (9) and a laser heat sink (11). The optical adjustment frame (1) is provided with a lens clamp (2). The laser heat sink (11) is provided with a semiconductor laser (12). The light emitting point of the semiconductor laser (12), the center point of the beam splitter (7) and the center point of the focusing mirror II (9) are on the same axis I as the light beam detection point of the beam quality detection system (6). The mirror surface of the beam splitter (7) is at an angle of 45° with the axis I. The beam quality detection system (6) comprises a beam quality analyzer (61), a detection system support (62) and a detection system base (63). The detection system base (63) is fixed on the threaded hole on the surface of the optical platform (10) by a screw. The detection system support (62) is connected with the detection system base (63) by a screw. The beam quality analyzer (61) is connected with the detection system support (62) by a screw. The center of the beam splitter (7), the center of the focusing mirror I (8) and the focal point of the light spot image acquisition system (5) are on the same axis II, which is perpendicular to the axis I in the same horizontal plane. The light spot image acquisition system (5) comprises a CMOS photosensitive element (51), an acquisition system support (52) and an acquisition system base (53). The acquisition system base (53) is fixed on the threaded hole on the surface of the optical platform (10) by a screw. The acquisition system support (52) is connected with the acquisition system base (53) by a screw. The CMOS photosensitive element (51) is connected with the acquisition system support (52) by a screw. The helium-neon laser system (3) comprises a helium-neon laser (31), a helium-neon laser support (32) and a helium-neon laser clamp (33). The helium-neon laser support (32) is fixed on the threaded hole on the surface of the optical platform (10) by a screw. One end of the helium-neon laser clamp (33) clamps the helium-neon laser support (32), and the other end clamps the helium-neon laser (31). The emitted laser of the helium-neon laser (31) is parallel to the surface of the optical platform (10). The imaging monitoring system (4) comprises a camera and lens (41), an imaging system support (42), an imaging system base (43) and an imaging system clamp (44). The imaging system base (43) is fixed on the threaded hole on the surface of the optical platform (10) by a screw. The imaging system support (42) is two cross circular rods connected by a connecting piece. The vertical circular rod is inserted into the imaging system base (43) and is clamped by a screw. The horizontal circular rod is connected with the imaging system clamp (44) by a screw. The imaging system clamp (44) clamps the imaging camera and lens (41). The camera and lens (41) image and shoot the image near the light emitting point of the semiconductor laser (12) below.The laser of the semiconductor laser (12) passes through the beam splitter (7), the visible light of 400-700nm is divided into reflected light and transmitted light, the reflected light passes through the focusing mirror I (8) and irradiates on the CMOS photosensitive element (51), the transmitted light passes through the focusing mirror II (9) and irradiates on the detection hole of the beam quality analyzer (61); the laser of the helium-neon laser (31) is used to adjust the angle of the microlens, the laser of the semiconductor laser (12) is used to test the index of the microlens after irradiating on the beam quality analyzer (61) and the image collected after irradiating on the CMOS photosensitive element (51), and the microlens is adjusted to the best position.

2. The visible light band semiconductor laser microlens aligning device according to claim 1, characterized in that: The focusing lens I (8) and the focusing lens II (9) are both convex lenses.

3. The apparatus according to claim 1, characterized in that: The CMOS light sensing element (51) senses light in a 400-700nm visible light band.

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