Display panel and mobile terminal

Abstract

The application provides a display panel and a mobile terminal. The light sensing module of the display panel comprises a light sensing transistor and a light condensing structure arranged on the light sensing transistor. The first active layer of the light sensing transistor comprises a first channel portion. The first source-drain electrode layer is arranged on the first active portion on the two sides of the first channel portion. The light condensing structure comprises at least one protrusion protruding in the direction away from the substrate of the display panel. In the plan view direction of the display panel, the light condensing structure covers at least the first channel portion of the first active layer. The light condensing structure is arranged on the light sensing transistor of the light sensing module, so that the light passing through the light condensing structure is focused on the channel portion in the light sensing transistor. The total amount of the light received by the light sensing transistor is increased, and the photosensitivity of the light sensing transistor is improved.

Description

Technical Field

[0001] This application relates to the field of displays, and in particular to a display panel and a mobile terminal. Background Technology

[0002] Displays are widely used in various sectors of society, with a growing demand for interactive display technology. Currently, integrating light sensors into display panels and using lasers as a control source are existing technologies that enable precise remote interaction.

[0003] Existing light-controlled sensors typically include a phototransistor, a switching transistor, and a readout module. When the source and drain of the switching transistor are turned on, the photocurrent generated by the phototransistor under light-sensitive conditions is fed into the readout module to acquire the light signal. However, current phototransistors receive a relatively small amount of light per unit time, resulting in poor photosensitivity of the light-controlled sensor.

[0004] Therefore, there is an urgent need for a display panel to solve the above-mentioned technical problems. Summary of the Invention

[0005] This application provides a display panel and a mobile terminal to solve the technical problem of poor photosensitivity of light control sensors in existing display panels.

[0006] To solve the above problems, the technical solution provided in this application is as follows:

[0007] This application provides a display panel, which includes a light-sensing module and a readout module connected to the light-sensing module. The light-sensing module includes:

[0008] A photosensitive transistor includes a first active layer and a first source-drain layer located on the first active layer. The first active layer includes a first channel portion and first active portions located on both sides of the first channel portion. The first source-drain layer is disposed on the first active portions on both sides of the first channel portion.

[0009] A switching transistor is connected to the photosensitive transistor and the readout module;

[0010] A first capacitor is connected to the photosensitive transistor and the switching transistor; and

[0011] A light-concentrating structure is disposed on the photosensitive transistor, the light-concentrating structure including at least one protrusion that protrudes along the direction of the photosensitive transistor away from the substrate of the display panel;

[0012] In the top view direction of the display panel, the light-concentrating structure at least covers the first channel portion of the first active layer.

[0013] In the display panel of this application, the light-concentrating structure includes a light-concentrating plane and a light-concentrating inclined plane connected to the light-concentrating plane. The light-concentrating inclined plane includes a first end and a second end. The first end is disposed away from the photosensitive transistor, and the second end is disposed close to the photosensitive transistor. The first end is connected to the light-concentrating plane.

[0014] In the top view direction of the display panel, the light-concentrating plane at least covers the first channel portion of the first active layer.

[0015] In the display panel of this application, the light-concentrating structure includes a light-concentrating arc surface, and the convex direction of the light-concentrating arc surface is away from the photosensitive transistor;

[0016] In the top view direction of the display panel, the orthographic projection of the focal point of the light-concentrating arc surface onto the first channel portion is located within the first channel portion.

[0017] In the display panel of this application, the first source-drain layer includes a first source and a first drain that are separately disposed, the first source includes a first surface remote from the first active layer, and the first drain includes a second surface remote from the first active layer.

[0018] The focal point of the focusing arc surface coincides with the plane containing the first surface and / or the second surface.

[0019] In the display panel of this application, the switching transistor includes a second active layer, the second active layer includes a second channel portion and second active portions located on both sides of the second channel portion, and the second channel portion and the second source-drain layer are disposed without overlap;

[0020] In the top view direction of the display panel, the length of the first channel portion is greater than the length of the second channel portion.

[0021] In the display panel of this application, the display panel further includes a display transistor, the display transistor includes a third active layer, the third active layer includes a third channel portion and third active portions located on both sides of the third channel portion, the third channel portion and the third source-drain layer are disposed without overlap;

[0022] In the top view direction of the display panel, the length of the first channel portion is greater than the length of the third channel portion.

[0023] In the display panel of this application, the first source-drain layer includes a first source and a first drain that are separately disposed, with the first source disposed close to the display transistor and the first drain disposed away from the display transistor;

[0024] In the direction from the photosensitive transistor to the light-concentrating structure, the thickness of the first source electrode is greater than the thickness of the first drain electrode.

[0025] In the display panel of this application, the gate of the photosensitive transistor is connected to a first control signal line, the first electrode of the photosensitive transistor is connected to a first power supply line, and the second electrode of the photosensitive transistor is connected to the first electrode of the switching transistor.

[0026] The gate of the switching transistor is connected to the second control signal line, and the second electrode of the switching transistor is connected to the readout module;

[0027] The first capacitor includes a first electrode and a second electrode. The first electrode is connected to the second electrode of the photosensitive transistor and the first electrode of the switching transistor, and the second electrode is connected to the first control signal line.

[0028] In the display panel of this application, the readout module includes:

[0029] An operational amplifier, comprising an inverting input terminal, a non-inverting input terminal, and an output terminal, wherein the non-inverting input terminal is connected to a comparison voltage terminal, and the inverting input terminal is connected to the second electrode of the switching transistor;

[0030] A readout capacitor is connected in parallel with the operational amplifier;

[0031] A first switch is connected in parallel with the operational amplifier and the readout capacitor;

[0032] The first end of the readout capacitor and the first end of the first switch are connected to the inverting input of the operational amplifier, and the second end of the readout capacitor and the second end of the first switch are connected to the output of the operational amplifier.

[0033] This application also proposes a mobile terminal, which includes a terminal body and the aforementioned display panel, wherein the terminal body and the display panel are integrated into one unit.

[0034] Beneficial Effects: This application proposes a display panel and a mobile terminal; the light-sensing module of the display panel includes a photosensitive transistor and a light-concentrating structure disposed on the photosensitive transistor. The first active layer of the photosensitive transistor includes a first channel portion, and a first source-drain layer is disposed on the first active portions on both sides of the first channel portion. The light-concentrating structure includes at least one protrusion protruding along the direction away from the substrate of the display panel from the photosensitive transistor. In the top view direction of the display panel, the light-concentrating structure at least covers the first channel portion of the first active layer. By providing a light-concentrating structure on the photosensitive transistor of the light-sensing module, this application enables the light passing through the light-concentrating structure to be focused on the channel portion in the photosensitive transistor, thereby increasing the total amount of light received by the photosensitive transistor and improving the photosensitivity of the photosensitive transistor. Attached Figure Description

[0035] The technical solution and other beneficial effects of this application will become apparent from the following detailed description of specific embodiments in conjunction with the accompanying drawings.

[0036] Figure 1 This is a circuit diagram of the light sensing module and readout module in the display panel of this application;

[0037] Figure 2 This is a diagram of the first type of film structure of the light-sensing module in the display panel of this application;

[0038] Figure 3 for Figure 2 Optical schematic diagram of a photosensitive transistor;

[0039] Figure 4 This is a diagram of the second type of film structure for the light-sensing module in the display panel of this application;

[0040] Figure 5 for Figure 4 Optical schematic diagram of a photosensitive transistor;

[0041] Figure 6 for Figure 4 A partial top view of the photosensitive transistor;

[0042] Figure 7 This is a diagram of the third type of film structure for the light-sensing module in the display panel of this application. Detailed Implementation

[0043] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0044] Please see Figures 1 to 7This application provides a display panel 100, which includes a light-sensing module 200 and a readout module 300 connected to the light-sensing module 200. The light-sensing module 200 includes:

[0045] The photosensitive transistor T1 includes a first active layer 131 and a first source-drain layer 141 located on the first active layer 131. The first active layer 131 includes a first channel portion 131a and first active portions 131b located on both sides of the first channel portion 131a. The first source-drain layer 141 is disposed on the first active portions 131b on both sides of the first channel portion 131a.

[0046] Switching transistor T2 is connected to the photosensitive transistor T1 and the readout module 300;

[0047] A first capacitor Cst is connected to the photosensitive transistor T1 and the switching transistor T2; and

[0048] A light-concentrating structure 160 is disposed on the photosensitive transistor T1, and the light-concentrating structure 160 includes at least one protrusion with a protrusion direction away from the photosensitive transistor T1;

[0049] The light-concentrating structure 160 includes at least one protrusion that protrudes along the direction of the photosensitive transistor T1 away from the substrate 10 of the display panel 100.

[0050] In the top view direction of the display panel 100, the light-concentrating structure 160 at least covers the first channel portion 131a of the first active layer 131.

[0051] This application provides a light-concentrating structure 160 on the photosensitive transistor T1 of the light-sensing module 200, so that the light incident on the display panel 100 is focused into the channel of the photosensitive transistor T1 through the light-concentrating structure 160, thereby increasing the total amount of light received by the photosensitive transistor T1 per unit time and improving the photosensitivity of the photosensitive transistor T1.

[0052] In this embodiment, please refer to Figure 1The first gate 111 of the photosensitive transistor T1 can be connected to the first control signal line GE1, the first electrode of the photosensitive transistor T1 is connected to the first power supply line SVDD, and the second electrode of the photosensitive transistor T1 is connected to the first electrode of the switching transistor T2; the second gate 211 of the switching transistor T2 is connected to the second control signal line GE2, and the second electrode of the switching transistor T2 is connected to the readout module 300; the first capacitor Cst includes a first plate 341 and a second plate 311, the first plate 341 is connected to the second electrode of the photosensitive transistor T1 and the first electrode of the switching transistor T2, and the second plate 311 is connected to the first control signal line GE1.

[0053] In this embodiment, the first electrode of the photosensitive transistor T1 is either the drain or the source, and the second electrode of the photosensitive transistor T1 is either the drain or the source; the first electrode of the switching transistor T2 is either the drain or the source, and the second electrode of the switching transistor T2 is either the drain or the source. For example, the first electrodes of both the photosensitive transistor T1 and the switching transistor T2 are sources, and the second electrodes of both the photosensitive transistor T1 and the switching transistor T2 are drains.

[0054] In this embodiment, the light sensing module 200 can be disposed within a sub-pixel of the display panel 100, and is used to realize functions such as touch control, fingerprint recognition, and long-distance optical interaction by sensing changes in light intensity.

[0055] In this embodiment, please refer to Figure 1 The readout module 300 may include an operational amplifier 400, which includes an inverting input terminal, a non-inverting input terminal, and an output terminal (e.g., ...). Figure 1 In the operational amplifier 400, "-" indicates the inverting input and "+" indicates the non-inverting input. The non-inverting input is connected to the comparison voltage terminal Vref, and the inverting input is connected to the second electrode of the switching transistor T2. A readout capacitor Cint is connected in parallel with the operational amplifier 400. A first switch Switch is connected in parallel with the operational amplifier 400 and the readout capacitor Cint. The first terminal of the readout capacitor Cint and the first terminal of the first switch Switch are connected to the inverting input of the operational amplifier 400, and the second terminal of the readout capacitor Cint and the second terminal of the first switch Switch Switch are connected to the output of the operational amplifier 400. The output of the operational amplifier 400 is also connected to a readout line, which is used to output a light-sensing signal.

[0056] In this embodiment, the readout capacitor Cint is an integrating capacitor.

[0057] The technical solution of this application will now be described in conjunction with specific embodiments.

[0058] Please see Figure 2 , Figure 2 This is a cross-sectional view of the light-sensing module 200 in the display panel 100 of this application. The display panel 100 may include a substrate 10 and a thin-film transistor layer 20 located on the substrate 10.

[0059] In this embodiment, the substrate 10 can be made of materials such as glass, quartz, or polyimide. The thin-film transistor layer 20 includes a plurality of thin-film transistors.

[0060] In this embodiment, the thin-film transistor can be an etch-block type, a back-channel etch type, or other structures, and there are no specific limitations.

[0061] Please refer to the display panel 100 in this application. Figure 2 The thin-film transistor layer 20 may include:

[0062] A first metal layer 110 is disposed on the substrate 10. The first metal layer 110 may include multiple gate lines and the first gate 111 constituting the photosensitive transistor T1, the second gate 211 of the switching transistor T2, and the second plate 311 of the first capacitor Cst. The material of the first metal layer 110 may be copper, molybdenum, or molybdenum-titanium alloy, etc.

[0063] A gate insulating layer 120 is disposed on the first metal layer 110 and covers the first metal layer 110, so that the conductive layer on the first metal layer 110 and the gate insulating layer 120 are separated. The material of the gate insulating layer 120 can be silicon oxide or the like.

[0064] An active material layer 130 is disposed on the gate insulating layer 120. The material of the active material layer 130 can be IGZO (indium gallium zinc oxide), a-Si (amorphous silicon), or LTPS (low-temperature polycrystalline silicon), for example... Figure 2 The active material layer 130 can be made of a-Si.

[0065] In this embodiment, the active material layer 130 includes a first active layer 131 constituting the photosensitive transistor T1 and a second active layer 231 constituting the switching transistor T2. The first active layer 131 includes a first channel portion 131a and first active portions 131b located on both sides of the first channel portion 131a. The second active layer 231 includes a second channel portion 231a and second active portions 231b located on both sides of the second channel portion 231a.

[0066] The second metal layer 140 is disposed on the active material layer 130. The second metal layer 140 may include multiple data lines, the first electrode plate 341 of the first capacitor Cst, and the first source-drain layer 141 constituting the photosensitive transistor T1 and the second source-drain layer 241 constituting the switching transistor T2.

[0067] In this embodiment, the first source-drain layer 141 includes a first source 141a and a first drain 141b that are separately disposed. The first source 141a and the first drain 141b overlap and cover the first active portion 131b of the first active layer 131, and the first channel portion 131a is not covered by the first source 141a and the first drain 141b. The second source-drain layer 241 includes a second source 241a and a second drain 241b that are separately disposed. The second source 241a and the second drain 241b overlap and cover the second active portion 231b of the second active layer 231, and the second channel portion 231a is not covered by the second source 241a and the second drain 241b.

[0068] In this embodiment, the first source 141a is the first electrode of the photosensitive transistor T1, and the first drain 141b is the second electrode of the photosensitive transistor T1; the second source 241a is the first electrode of the switching transistor T2, and the second drain 241b is the second electrode of the switching transistor T2.

[0069] In this embodiment, the material of the second metal layer 140 can be a copper / molybdenum titanium alloy, copper / titanium, etc.

[0070] A protective layer 150 is disposed on the second metal layer 140 and covers the second metal layer 140 so that the conductive layer on the second metal layer 140 and the protective layer 150 are separated. The material of the protective layer 150 can be an inorganic material composed of silicon oxynitride or an organic material with planarity.

[0071] In this embodiment, the protective layer 150 is further provided with a light-concentrating structure 160 corresponding to the photosensitive transistor T1. When forming the protective layer 150, the protective layer 150 can be patterned to form a protective layer 150 with the light-concentrating structure 160.

[0072] Please refer to the display panel 100 in this application. Figure 2 and Figure 3 The light-concentrating structure 160 includes a light-concentrating plane 161a and a light-concentrating inclined surface 161b connected to the light-concentrating plane 161a. The light-concentrating inclined surface 161b includes a first end Q1 and a second end Q2. The first end Q1 is disposed away from the photosensitive transistor T1, and the second end Q2 is disposed close to the photosensitive transistor T1. The first end Q1 is connected to the light-concentrating plane 161a.

[0073] In this embodiment, in the top view direction of the display panel 100, the light-concentrating plane 161a at least covers the first channel portion 131a of the first active layer 131.

[0074] Please see Figure 2 and Figure 3 The light-concentrating structure 160 can be a protrusion on the protective layer 150. Among the light rays incident on the light-concentrating structure 160, the first light ray X that penetrates the light-concentrating plane 161a will be perpendicularly incident on the photosensitive transistor T1 and irradiate the first channel portion 131a of the photosensitive transistor T1. As for the second light ray Y that penetrates the light-concentrating inclined surface 161b, the light rays passing through the light-concentrating inclined surface 161b will be concentrated on the photosensitive transistor T1 under the effect of light refraction and irradiate the first channel portion 131a of the photosensitive transistor T1.

[0075] In this embodiment, since the opening area of ​​the first channel portion 131a is limited, if the area of ​​the focusing plane 161a is smaller than the area of ​​the first channel portion 131a, it can be considered that the first channel portion 131a is not covered by the focusing plane 161a. In this case, the light incident on the area not covered by the first channel portion 131a may not be effectively incident on the first channel portion 131a due to light refraction, which reduces the total amount of light received by the photosensitive transistor T1 per unit time and weakens the photosensitivity of the photosensitive transistor T1.

[0076] In this embodiment, the protruding light-concentrating structure 160 allows light incident on the light-concentrating plane 161a to be perpendicularly incident on the first channel portion 131a, and light incident on the light-concentrating inclined surface 161b to be concentrated into the first channel portion 131a after light refraction. This increases the total amount of light received by the photosensitive transistor T1 per unit time and improves the photosensitivity of the photosensitive transistor T1.

[0077] Please refer to the display panel 100 in this application. Figure 4 and Figure 5 The light-concentrating structure 160 includes a light-concentrating arc surface 162, the convex direction of which is away from the photosensitive transistor T1; in the top view direction of the display panel 100, the orthogonal projection of the focal point O of the light-concentrating arc surface 162 onto the first channel portion 131a is located within the first channel portion 131a.

[0078] In this embodiment, the light-concentrating structure 160 can be a convex circle protruding from the protective layer 150. The light incident on the light-concentrating structure 160 penetrates the light-concentrating arc surface 162, and is concentrated to the focal point O of the light-concentrating arc surface 162 by light refraction, and is incident on the first channel portion 131a of the photosensitive transistor T1 through the focal point O.

[0079] and Figure 2 Compared to the structure, Figure 4 The structure in the middle can focus all the light rays incident on the focusing arc surface 162 onto the focal point O of the focusing arc surface 162, and Figure 2 The structure can only refract light incident on the focusing slope 161b into the photosensitive transistor T1 at the same angle, therefore Figure 4 The light-gathering effect is better than Figure 3 The light-focusing effect in the image.

[0080] In this embodiment, since the light incident on the focusing arc surface 162 is focused at the focal point O of the focusing arc surface 162, it is only necessary to set the focal point O of the focusing arc surface 162 above the first channel portion 131a to achieve a certain focusing effect, such as... Figure 4 The focal point O of the light-concentrating arc surface 162 in the structure can be set outside the cavity formed by the first channel portion 131a, the first source 141a and the second source 241a.

[0081] In this embodiment, the light-concentrating surface of the light-concentrating structure 160 is set as an arc surface, so that the light incident on the light-concentrating arc surface 162 is focused on the focal point O of the light-concentrating arc surface 162. At the same time, by setting the focal point O above the first channel portion 131a, the light transmitted through the light-concentrating arc surface 162 is incident into the first channel portion 131a as much as possible, which increases the total amount of light received by the photosensitive transistor T1 per unit time and improves the photosensitivity of the photosensitive transistor T1.

[0082] Please refer to the display panel 100 in this application. Figure 6The first source-drain layer 141 includes a first source 141a and a first drain 141b that are separately disposed. The first source 141a includes a first surface M that is away from the first active layer 131, and the first drain 141b includes a second surface N that is away from the first active layer 131.

[0083] In this embodiment, the focal point O of the focusing arc surface 162 coincides with the plane containing the first surface M and / or the second surface N. Please refer to [link / reference]. Figure 6 The side of the first surface M closest to the second surface N is the boundary line AB, and the side of the second surface N closest to the first surface M is the boundary line CD. When the first surface M and the second surface N can be located on the same plane, the focal point O of the focusing arc surface 162 can coincide with the plane ABCD.

[0084] In this embodiment, if the focal point O of the focusing arc surface 162 is located between the plane ABCD and the focusing arc surface 162, some incident light may irradiate the first surface M or the second surface N. If the focal point O of the focusing arc surface 162 is located between the plane ABCD and the first channel portion 131a, the distance between the focusing arc surface 162 and the first channel portion 131a is too small, resulting in an excessively large curvature of the focusing arc surface 162. Therefore, a focusing arc surface 162 with a small curvature cannot be set, i.e., a focusing arc surface 162 with a large radius cannot be set, resulting in an excessively small area of ​​the focusing arc surface 162. This reduces the total amount of light received by the photosensitive transistor T1 per unit time, weakening the photosensitivity of the photosensitive transistor T1. Therefore, setting the focal point O of the focusing arc surface 162 on the plane ABCD can maximize the increase in the total amount of light received by the first channel portion 131a per unit time, thereby improving the photosensitivity of the photosensitive transistor T1.

[0085] In this embodiment, please refer to Figure 6 The focal point O of the focusing arc surface 162 can coincide with the center point of the plane ABCD.

[0086] In the above embodiment, in order to ensure that the light is focused into the first channel portion 131a by the light-concentrating structure 160, the refractive index of other film materials disposed on the protective layer 150 must be greater than the refractive index of the protective layer 150. This is equivalent to a high refractive index film layer entering a low refractive index film layer, avoiding total internal reflection and improving the light-concentrating effect of the light-concentrating structure 160.

[0087] In this embodiment, please refer to Figure 2 and Figure 4 In the top view direction of the display panel 100, the length L1 of the first channel portion 131a is greater than the length L2 of the second channel portion 231a.

[0088] In this embodiment, since the photosensitivity of the phototransistor T1 is positively correlated with the total amount of light received by the first channel portion 131a per unit time, the larger the length L1 of the first channel portion 131a, the better the photosensitivity of the phototransistor T1. Within the size allowable range, increasing the length L1 of the first channel portion 131a as much as possible can improve the photosensitivity of the phototransistor T1.

[0089] Please refer to the display panel 100 in this application. Figure 7 The display panel 100 further includes a display transistor T3, which includes a third active layer 431. The third active layer 431 includes a third channel portion 431a and third active portions 431b located on both sides of the third channel portion 431a. The third channel portion 431a and the third source-drain layer 441 in the display transistor T3 are not overlapped.

[0090] In this embodiment, in the top view direction of the display panel 100, the length L1 of the first channel portion 131a can be greater than the length L3 of the third channel portion 431a. Figure 2 and Figure 4 The structures are similar. The second channel portion 231a is the active layer of the switching transistor T2, and the third channel portion 431a is the active layer of the display transistor T3. The display transistor T3 and the switching transistor T2 only serve as switches. The length of the channel portion is only related to the turn-on rate of the display transistor and the switching transistor T2. Therefore, within the allowable size range, this embodiment increases the area of ​​the first active layer 131 that receives light by limiting the length L3 of the second channel portion 231a and the third channel portion 431a, while increasing the length L1 of the first channel portion 131a, thereby improving the photosensitivity of the photosensitive transistor T1.

[0091] Please see Figure 7 The first source 141a is disposed close to the display transistor T3, and the first drain 141b is disposed away from the display transistor T3. In the direction from the photosensitive transistor T1 to the light-concentrating structure, the thickness of the first source 141a is greater than the thickness of the first drain 141b.

[0092] In this embodiment, increasing the thickness of the first source electrode 141a allows it to act as a barrier, reflecting light incident on its side into the first channel portion 131a, thereby increasing the total amount of light received by the photosensitive transistor T1 and improving its photosensitivity. At the same time, it also blocks light reflected from the first source electrode 141a to the display transistor, ensuring the performance of the display transistor.

[0093] In the display panel 100 of this application, the display panel 100 can be divided into a display stage and a light-sensing stage within one frame. The light-sensing module 200 is used to operate in the light-sensing stage, while the display unit is used to operate in the display stage. The display panel 100 with the light-sensing module 200 can realize functions such as touch control, fingerprint recognition, and long-distance optical interaction. At the same time, integrating the light-sensing module 200 into the display panel 100 can also reduce the overall thickness of the display panel 100.

[0094] This application also proposes a mobile terminal, which includes a terminal body and the aforementioned display panel, wherein the terminal body and the display panel are integrated into one unit. The terminal body may include components such as a circuit board bonded to the display panel, and a cover plate covering the display panel. The mobile terminal may include electronic devices such as mobile phones, televisions, and laptops.

[0095] This application discloses a display panel and a mobile terminal; the light-sensing module of the display panel includes a phototransistor and a light-concentrating structure disposed on the phototransistor. The first active layer of the phototransistor includes a first channel portion, and a first source-drain layer is disposed on the first active portions on both sides of the first channel portion. The light-concentrating structure includes at least one protrusion protruding along the direction away from the substrate of the display panel from the phototransistor. In the top view direction of the display panel, the light-concentrating structure at least covers the first channel portion of the first active layer. By providing a light-concentrating structure on the phototransistor of the light-sensing module, this application enables the light passing through the light-concentrating structure to be focused on the channel portion in the phototransistor, thereby increasing the total amount of light received by the phototransistor and improving the photosensitivity of the phototransistor.

[0096] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0097] The above provides a detailed description of a display panel and mobile terminal provided in the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the technical solutions and core ideas of this application. Those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A display panel, characterized by, It includes a light-sensing module and a readout module connected to the light-sensing module, the light-sensing module including: A photosensitive transistor includes a first active layer and a first source-drain layer located on the first active layer. The first active layer includes a first channel portion and first active portions located on both sides of the first channel portion. The first source-drain layer is disposed on the first active portions on both sides of the first channel portion. A switching transistor is connected to the photosensitive transistor and the readout module; A first capacitor is connected to the photosensitive transistor and the switching transistor; and A light-concentrating structure is disposed on the photosensitive transistor. The light-concentrating structure includes at least one protrusion that protrudes along the direction of the photosensitive transistor away from the substrate of the display panel. In the top view direction of the display panel, the light-concentrating structure at least covers the first channel portion of the first active layer. The switching transistor includes a second active layer, which includes a second channel portion and second active portions located on both sides of the second channel portion. In the top view direction of the display panel, the length of the first channel portion is greater than the length of the second channel portion.

2. The display panel of claim 1, wherein, The light-concentrating structure includes a light-concentrating plane and a light-concentrating inclined plane connected to the light-concentrating plane. The light-concentrating inclined plane includes a first end and a second end. The first end is disposed away from the photosensitive transistor, and the second end is disposed close to the photosensitive transistor. The first end is connected to the light-concentrating plane. In the top view direction of the display panel, the light-concentrating plane at least covers the first channel portion of the first active layer.

3. The display panel of claim 1, wherein, The light-concentrating structure includes a light-concentrating arc surface, the convex direction of which is opposite to the photosensitive transistor; In the top view direction of the display panel, the orthographic projection of the focal point of the light-concentrating arc surface onto the first channel portion is located within the first channel portion.

4. The display panel of claim 3, wherein, The first source-drain layer includes a first source and a first drain that are separately disposed, the first source includes a first surface that is away from the first active layer, and the first drain includes a second surface that is away from the first active layer; The focal point of the focusing arc surface coincides with the plane containing the first surface and / or the second surface.

5. The display panel of claim 1, wherein, The display panel further includes a display transistor, which includes a third active layer and a third source-drain layer located on the third active layer. The third active layer includes a third channel portion and third active portions located on both sides of the third channel portion. The third channel portion and the third source-drain layer are disposed without overlap. In the top view direction of the display panel, the length of the first channel portion is greater than the length of the third channel portion.

6. The display panel of claim 5, wherein, The first source-drain layer includes a first source and a first drain that are separately disposed, with the first source disposed close to the display transistor and the first drain disposed away from the display transistor; In the direction from the photosensitive transistor to the light-concentrating structure, the thickness of the first source electrode is greater than the thickness of the first drain electrode.

7. The display panel of claim 1, wherein, The gate of the photosensitive transistor is connected to the first control signal line, the first electrode of the photosensitive transistor is connected to the first power supply line, and the second electrode of the photosensitive transistor is connected to the first electrode of the switching transistor. The gate of the switching transistor is connected to the second control signal line, and the second electrode of the switching transistor is connected to the readout module; The first capacitor includes a first electrode and a second electrode. The first electrode is connected to the second electrode of the photosensitive transistor and the first electrode of the switching transistor, and the second electrode is connected to the first control signal line.

8. The display panel of claim 7, wherein, The readout module includes: An operational amplifier, comprising an inverting input terminal, a non-inverting input terminal, and an output terminal, wherein the non-inverting input terminal is connected to a comparison voltage terminal, and the inverting input terminal is connected to the second electrode of the switching transistor; A readout capacitor is connected in parallel with the operational amplifier; A first switch is connected in parallel with the operational amplifier and the readout capacitor; The first end of the readout capacitor and the first end of the first switch are connected to the inverting input of the operational amplifier, and the second end of the readout capacitor and the second end of the first switch are connected to the output of the operational amplifier.

9. A mobile terminal, characterized by It includes a terminal body and a display panel as claimed in any one of claims 1 to 8, wherein the terminal body and the display panel are combined into one unit.

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