A dual-spectral dynamic stealth material based on layered design

Abstract

This invention provides a layered dual-spectral dynamic stealth material, comprising, from top to bottom, a mid-infrared phase-change grating layer, an intermediate dielectric transition layer, and a microwave impedance matching layer. The mid-infrared phase-change grating layer consists of periodically arranged square protrusions on the upper surface of the intermediate dielectric transition layer, used for infrared light absorption. Each square protrusion includes a mid-infrared phase-change layer and a mid-infrared reflective layer stacked from top to bottom. The mid-infrared phase-change layer is made of a phase-change material, and the mid-infrared reflective layer is made of a metallic material. The intermediate dielectric layer is disposed between the mid-infrared phase-change grating layer and the microwave impedance matching layer, used to achieve the transition from infrared spectral modulation to microwave spectral modulation. The microwave impedance matching layer enables the control of the microwave absorption spectrum. The layered dual-spectral dynamic stealth material provided by this invention is low-cost, highly adaptable, and capable of discrete dynamic control of different spectra.

Description

Technical Field

[0001] This invention belongs to the field of multispectral camouflage technology, specifically involving a dual-spectral dynamic stealth material based on a layered design, which can achieve discrete dynamic control of the 8-14 micrometer infrared absorption spectrum and the 2-18 GHz microwave absorption spectrum. Background Technology

[0002] With the continuous development and popularization of modern detection methods and spectrum analysis technology, target identification methods have evolved from the early communication bands (2-18 GHz) to multispectral ranges and multiple measurement methods. The range of spectral identification has expanded from the original communication bands to include visible light, infrared light, microwaves, and terahertz waves. Detection methods have also become more mature and diverse, including communication radar detection, lidar detection, thermal imaging, and other target detection techniques. This allows for the detection and identification of targets using multiple methods and across multiple spectral ranges. Especially in the pitch-black night, radar detection and infrared imaging provide a level of "vision" similar to that of an owl. In contrast to the increasingly mature and diverse imaging and detection methods, stealth technology still lags significantly behind in its development. Therefore, the demand for multispectral stealth methods is becoming increasingly urgent as detection methods expand.

[0003] Research on microwave stealth has a long history. Due to the basic principles of radar and other testing methods, microwave stealth is generally achieved through microwave absorption. Early on, the Salisbury screen design principle was largely adopted to achieve microwave absorption. However, this design principle requires the structural dimensions to match the wave vector, making it difficult to achieve perfect absorption over a large bandwidth. Since the concept of perfect metamaterial absorption was first proposed in 2008 by NILandy, S. Sajuyigbe, JJ Mock, DRSmith, and W.J. Padilla in *Perfect Metamaterial Absorber* [J], *Physical Review Letter* (2008), research on achieving broadband perfect absorption through structured patterns has attracted attention. However, this patterning method is not conducive to large-scale fabrication, and the sophisticated structural design also poses challenges to existing processing technologies. Furthermore, most of these perfect microwave absorbers are achieved through patterned metal structures. Therefore, these perfect microwave absorbers lack the tunability of their operating bandwidth and the absorptivity within that bandwidth. In recent years, the use of spatial impedance matching and transmission line theory to achieve tunable broadband absorption in graphene-based metamaterials has attracted widespread attention. Since the conductivity of graphene can be tuned by the gate voltage, microwave tunable broadband absorption based on graphene materials becomes possible. Although multispectral compatible graphene-based tunable absorbing materials have emerged (M. Said Ergoktas, Gokhan Bakan, Evgeniya Kovalska, et al. Multispectral graphene-based electro-optical surfaces with reversible tunability from visible to microwave wavelengths, Nature Photonics (2021), the spectral characteristics of the entire structure change simultaneously with variations in the Fermi level of graphene. This does not meet the requirements of multispectral camouflage, and therefore, this research still has a significant gap to bridge for applications in achieving multispectral dynamic stealth.

[0004] Compared to microwave absorbing materials required for microwave stealth, infrared camouflage operates on the opposite principle, requiring a low absorptivity (emissivity) of the target object in the detection band. According to Stefan Boltzmann's law, an object's thermal radiation power is proportional to the fourth power of its emissivity and temperature. Existing infrared imaging equipment largely relies on this law to determine the target's temperature by measuring the radiation power within the mid-infrared atmospheric window (8-14 micrometers). This band is chosen because, for objects near room temperature (300K), most of their radiation energy is distributed within this band. Furthermore, the existence of the mid-infrared atmospheric window allows light waves in this band to travel long distances through the air without loss, facilitating long-range thermal imaging. Therefore, achieving infrared camouflage requires minimizing either the temperature or the target's emissivity within the window band. Lowering the temperature is the most intuitive method, but temperature control is extremely challenging. Adjusting the target's emissivity is considered a more feasible approach. Early methods for reducing emissivity often utilized thin metal layers (with low emissivity within the window band) to achieve static thermal camouflage. However, this static thermal camouflage scheme suffers from several drawbacks. First, its low emissivity across the entire infrared band leads to heat accumulation—the heat of the entire structure is difficult to dissipate through thermal radiation, which negatively impacts its thermal stability. Second, the design of this static thermal camouflage structure lacks adjustability, making it difficult to adapt to changing environments. It is more easily exposed in environments with large temperature variations, becoming a target. Furthermore, this thermal camouflage becomes ineffective when the background temperature is higher than the target object. Therefore, dynamic thermal camouflage is a more promising approach.

[0005] Although some stealth solutions have been proposed to counter detection methods in both the microwave and infrared bands, such as the Chinese patent CN112009039A which discloses a structural material with characteristics such as wideband microwave absorption, low infrared emissivity and excellent heat dissipation performance, which can achieve infrared and microwave compatibility and low detectability, there are few reports on how to achieve dynamic stealth methods for both bands simultaneously, especially dual-spectral discrete tunable stealth materials for both bands. Summary of the Invention

[0006] The technical problem to be solved by this invention is to provide a low-cost, highly adaptable, and layered dynamic stealth material that can achieve discrete dynamic control of different spectra in the mid-infrared and microwave bands for multispectral camouflage.

[0007] To achieve the above objectives, the technical solution of the present invention is as follows: a dual-spectral dynamic stealth material based on a layered design, comprising, from top to bottom, a mid-infrared phase-change grating layer, an intermediate dielectric transition layer, and a microwave impedance matching layer; the mid-infrared phase-change grating layer consists of square protrusions periodically arranged on the upper surface of the intermediate dielectric transition layer for infrared light absorption, the square protrusions comprising, from top to bottom, a mid-infrared phase-change layer and a mid-infrared reflective layer, the mid-infrared phase-change layer being made of a phase-change material, and the mid-infrared reflective layer being made of a metallic material; the intermediate dielectric layer is disposed between the mid-infrared phase-change grating layer and the microwave impedance matching layer, for realizing the transition from infrared spectrum modulation to microwave spectrum modulation; the microwave impedance matching layer comprises, from top to bottom, a graphene film, a high-resistivity layer, a first spacer layer, a loss layer, a second spacer layer, and a microwave reflective layer, the first and second spacer layers being microwave-transparent materials, and the microwave reflective layer being made of a metallic material, the sheet resistance of the graphene film is adjusted by the gate voltage to achieve the modulation of the microwave absorption spectrum by the microwave impedance matching layer.

[0008] Preferably, the mid-infrared phase change layer is a sulfide-based phase change material with a thickness H1 between 100 nm and 800 nm; the thickness H2 of the mid-infrared reflective layer is between 50 nm and 300 nm; the side length W of the square protrusions is 0.6 μm to 3 μm, and the period P of the square protrusion array is 2 μm to 5 μm; the intermediate medium transition layer is a transparent medium material with a thickness H3 between 0.1 mm and 1 mm.

[0009] Preferably, the sheet resistance of the graphene film is in the range of 120-700 Ω / sq, and its thickness h1 is in the range of 50 μm-200 μm; the high-resistivity layer is a polyimide film coated with high-resistivity conductive ink, and the sheet resistance Ω1 of the high-resistivity layer is in the range of 2000-8000 Ω / sq; the loss layer is a polyimide film coated with low-resistivity conductive ink, and the sheet resistance Ω2 of the loss layer is in the range of 100-500 Ω / sq; the thickness of both the high-resistivity layer and the loss layer is h2, and the thickness h2 is in the range of 20 μm-100 μm; the thickness of both the first spacer layer and the second spacer layer is h3, and the thickness h3 is in the range of 3 mm-100 mm.

[0010] Preferably, the period P of the square protrusion array is 3 μm, the side length W of the square protrusion is 1.8 μm, the mid-infrared phase transition layer is Ge2Sb2Te5 with a thickness H1 = 440 nm, the mid-infrared reflective layer is gold with a thickness H2 = 200 nm, the intermediate dielectric transition layer is silicon dioxide with a thickness H3 = 0.2 mm, the graphene film has a thickness h1 = 200 μm, the sheet resistance Ω1 of the high-resistivity layer is 5000 Ω / sq, the sheet resistance Ω2 of the loss layer is 250 Ω / sq with a thickness h2 = 50 μm, and the first and second spacer layers are both made of polyethylene with a thickness h3 = 7.5 mm.

[0011] Preferably, the graphene film comprises a PET substrate, on which 1-5 layers of graphene are disposed.

[0012] Preferably, the PET substrate has three layers of graphene.

[0013] Preferably, the sulfur-based phase change material is Ge2Sb2Te5, Ge3Sb2Te6, or GeTe.

[0014] Preferably, the mid-infrared reflective layer is made of gold, silver, copper, chromium, or tungsten.

[0015] Preferably, the intermediate medium transition layer is silicon dioxide, titanium dioxide, or zinc sulfide.

[0016] Preferably, the microwave reflective layer is made of gold, silver, copper, chromium, or tungsten.

[0017] The beneficial effects of this invention are as follows: Under incident light, the mid-infrared phase-change grating layer generates a resonance peak for mid-infrared light based on the FP cavity harmonic principle, thereby achieving absorption of infrared light. Due to the significant order-of-magnitude difference in wavelength between the mid-infrared and microwave bands, the designed mid-infrared phase-change grating structure allows microwave electromagnetic waves to penetrate to the intermediate transition medium layer and continue propagating to the microwave impedance matching layer. In the microwave impedance matching layer, utilizing the principle of impedance matching, the impedance of the designed microwave absorber can be matched with the spatial impedance, thereby achieving broadband microwave absorption. Compared to traditional stealth materials, this invention can control the mid-infrared absorption spectrum by regulating the phase transition state of the phase-change material; and can control the microwave absorption spectrum by regulating the conductivity of graphene through the gate voltage. It has the following advantages:

[0018] 1. A single structure enables multispectral dynamic camouflage, which has a stronger adaptability to camouflage environments compared to traditional static camouflage stealth materials.

[0019] 2. This structure can achieve discrete dynamic control of different spectra. Specifically, the infrared absorption spectrum and microwave absorption spectrum of the designed device can be controlled separately through layered changes without interference, which greatly enhances the practicality of multispectral dynamic camouflage.

[0020] 3. The multi-layer structure does not require excessive patterned structural design, which makes the designed stealth material more suitable for large-area preparation and processing, and can reduce costs. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of one embodiment of the present invention.

[0022] Figure 2 is Figure 1 The detailed structural diagram of the functional layer of the embodiment shown is as follows: Figure 2(a) is a schematic diagram of the structure of the mid-infrared phase change grating layer; Figure 2(b) is a schematic diagram of the structure of the microwave impedance matching layer.

[0023] Figure 3 for Figure 1 The overall configuration structure diagram of the embodiment shown.

[0024] Figure 4 is Figure 1 The schematic diagram of the embodiment shown; Figure 4(a) is a schematic diagram of the change of mid-infrared absorption spectrum with the phase change state of the phase change material; Figure 4(b) is a schematic diagram of the change of microwave impedance matching layer absorptivity; Figure 4(c) is a schematic diagram of the change of microwave impedance matching layer reflectivity.

[0025] Figure 5 for Figure 1 The electric field diagram and ohmic impedance diagram at the mid-infrared resonance peak of the illustrated embodiment.

[0026] Figure 6 for Figure 1 A comparison diagram of the microwave equivalent circuit and the absorption spectrum of the finite-time difference method in the illustrated embodiment.

[0027] In the figure, A is the mid-infrared phase change grating layer; B is the intermediate dielectric transition layer; C is the microwave impedance matching layer; 10 is the mid-infrared phase change layer; 11 is the mid-infrared reflective layer; 20 is the graphene film; 21 is the high-resistivity layer; 22 is the first spacer layer; 23 is the loss layer; 24 is the second spacer layer; and 25 is the microwave reflective layer. Detailed Implementation

[0028] The technical solution of the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments:

[0029] Please refer to the following: Figure 1As shown in Figure 2, the dual-spectral dynamic stealth material based on layered design provided in this embodiment includes, from top to bottom, a mid-infrared phase-change grating layer A, an intermediate dielectric transition layer B, and a microwave impedance matching layer C. The mid-infrared phase-change grating layer A consists of square protrusions periodically arranged on the upper surface of the intermediate dielectric transition layer B. The mid-infrared phase-change grating configuration formed by the square protrusions is used for infrared light absorption. The square protrusions include a mid-infrared phase-change layer 10 and a mid-infrared reflective layer 11 stacked from top to bottom. The mid-infrared phase-change layer 10 is made of a phase-change material with phase-change properties, and the mid-infrared reflective layer 11 is a metallic material used for reflecting infrared light. The intermediate dielectric layer B is disposed between the mid-infrared phase-change grating layer A and the microwave impedance matching layer C, and is used to support the mid-infrared phase-change grating layer A and ensure that the mid-infrared phase-change grating layer A and the microwave impedance matching layer C are connected. The impedance matching layer C is spaced apart, thereby realizing the conversion from infrared spectrum modulation to microwave spectrum modulation. The microwave impedance matching layer C includes, from top to bottom, a graphene film 20, a high-resistivity layer 21, a first spacer layer 22, a loss layer 23, a second spacer layer 24, and a microwave reflective layer 25. The high-resistivity layer 21 and the loss layer 23 are prepared by spraying conductive ink onto a polyimide film. The main component of the conductive ink is carbon paste. The first spacer layer 22 and the second spacer layer 24 are both microwave-transparent materials. The microwave reflective layer 25 is made of metal and is used to reflect electromagnetic waves that may be received. The graphene film 20 is a single layer of graphene prepared on a copper substrate by chemical vapor deposition (CVD) and transferred onto a PET substrate. The PET substrate is polyethylene terephthalate (PET), with the chemical formula (C...). 10 H8O4) n By adjusting the sheet resistance of the graphene film 20 through the gate voltage, the microwave absorption spectrum can be controlled.

[0030] The 3-5 orders of magnitude difference between the mid-infrared and microwave bands inevitably leads to significant differences in the structural dimensions required to manipulate the spectral characteristics of the two bands. This difference in structural dimensions results in functional incoherence between the various structures—a structure controlling mid-infrared spectral characteristics cannot control microwave characteristics. To address the problem of multispectral camouflage in both the mid-infrared and microwave bands, a layered design concept is proposed—to address the multispectral compatibility issue of incident wavelengths with significant order-of-magnitude differences, specific wavelengths are implemented at multiple levels to achieve corresponding functions.

[0031] The phase change material is a solid, and its phase change state can be induced and controlled by external electricity, light, heat, etc. During the phase change process, the characteristics of the phase change material GST change from a mid-infrared transparent medium to a mid-infrared lossy material, thereby achieving the control of mid-infrared absorption characteristics. The graphene film can be controlled by combining ionic liquid immersion and gate voltage to change its conductivity, thereby controlling microwave absorption characteristics. The mid-infrared phase change layer 10 and the graphene film are designed separately in terms of control methods, so they can be independently controlled, thereby achieving discrete dynamic control of multiple spectra with considerable modulation amplitude.

[0032] Under incident light, a mid-infrared phase-change grating layer generates a resonance peak for mid-infrared light based on the FP cavity harmonic principle, thereby achieving infrared light absorption. Due to the significant order-of-magnitude difference in wavelength between the mid-infrared and microwave bands, the designed mid-infrared phase-change grating structure allows microwave electromagnetic waves to penetrate to the intermediate transition medium layer and continue propagating to the microwave impedance matching layer. In the microwave impedance matching layer, utilizing the principle of impedance matching, the impedance of the designed microwave absorber can be matched with the spatial impedance, thereby achieving broadband microwave absorption. Compared to traditional stealth materials, this invention can control the mid-infrared absorption spectrum by regulating the phase transition state of the phase-change material; and can control the microwave absorption spectrum by regulating the conductivity of graphene through the gate voltage. It has the following advantages:

[0033] 1. A single structure enables multispectral dynamic camouflage, which has a stronger adaptability to camouflage environments compared to traditional static camouflage stealth materials.

[0034] 2. This structure can achieve discrete dynamic control of different spectra. Specifically, the infrared absorption spectrum and microwave absorption spectrum of the designed device can be controlled separately through layered changes without interference, which greatly enhances the practicality of multispectral dynamic camouflage.

[0035] 3. The multi-layer structure does not require excessive patterned structural design, which makes the designed stealth material more suitable for large-area preparation and processing, and can reduce costs.

[0036] Research on this type of multispectral tunable stealth material can solve the compatibility problem of different stealth requirements in multispectral stealth, and this tunable stealth material shows broad application prospects, including the realization of multiple functions such as stealth, deception and information transmission.

[0037] More specifically, the mid-infrared phase change layer 10 is a sulfide-based phase change material with a thickness H1 between 100 nm and 800 nm; the thickness H2 of the mid-infrared reflective layer 11 is between 50 nm and 300 nm; the side length W of the square protrusions is 0.6 μm to 3 μm, and the period P of the square protrusion array is 2 μm to 5 μm; the intermediate medium transition layer B is a transparent medium material with a thickness H3 between 0.1 mm and 1 mm.

[0038] More specifically, the sheet resistance of the graphene film 20 is in the range of 120-700 Ω / sq, and the thickness h1 is in the range of 50 μm-200 μm; the high-resistivity layer 21 is a polyimide film coated with high-resistivity conductive ink, and the sheet resistance Ω1 of the high-resistivity layer 21 is in the range of 2000-8000 Ω / sq; the loss layer 23 is a polyimide film coated with low-resistivity conductive ink, and the sheet resistance Ω2 of the loss layer 23 is in the range of 100-500 Ω / sq; the thickness of both the high-resistivity layer 21 and the loss layer 23 is h2, and the thickness h2 is in the range of 20 μm-100 μm; the thickness of both the first spacer layer 22 and the second spacer layer 24 is h3, and the thickness h3 is in the range of 3 mm-100 mm.

[0039] More specifically, the graphene film 20 includes a PET substrate on which 1-5 layers of graphene are disposed.

[0040] More specifically, the sulfur-based phase change material is Ge2Sb2Te5, Ge3Sb2Te6, or GeTe.

[0041] More specifically, the mid-infrared reflective layer 11 is made of gold, silver, copper, chromium, or tungsten.

[0042] More specifically, the intermediate medium transition layer B is silicon dioxide, titanium dioxide, or zinc sulfide.

[0043] More specifically, the microwave reflective layer 25 is made of gold, silver, copper, chromium, or tungsten.

[0044] Example 1

[0045] Please see Figure 3 The period P of the square protrusion array is 3 μm, and the side length W of the square protrusion is 1.8 μm. The mid-infrared phase transition layer 10 is a germanium-antimony-tellurium alloy with the chemical formula Ge2Sb2Te5 and a thickness H1 = 440 nm. The mid-infrared reflective layer 11 is gold with a thickness H2 = 200 nm. The intermediate dielectric transition layer B is silicon dioxide with a thickness H3 = 0.2 mm.

[0046] The graphene film 20 is a three-layer graphene film prepared on a copper substrate by chemical vapor deposition (CVD) and then transferred onto a PET substrate through three transfers, forming an equivalent capacitor structure. The sheet resistance (conductivity) of this graphene capacitor is electrically controlled, ranging from 120 to 700 Ω / sq. The total thickness h1 of this structure ranges from 50 μm to 200 μm. The sheet resistance of the high-resistivity layer 21 is Ω1 = 5000 Ω / sq, the sheet resistance of the loss layer 23 is Ω2 = 250 Ω / sq, and the thickness h2 = 50 μm. The first spacer layer 22 and the second spacer layer 24 are both made of polyethylene, with a thickness h3 = 7.5 mm.

[0047] Figure 4 shows a schematic diagram of a multispectral dynamic camouflage structure based on a layered design. Figure 4(a) illustrates the change in mid-infrared absorption spectrum with the phase transition state of the phase change material; the experimental measurements and simulation results are in excellent agreement. As the phase change material transitions from an amorphous to a crystalline state, the energy loss across the entire wavelength range in the resonant cavity increases, and the average emissivity in the 7.5-14 μm wavelength range rises from 9% to 67%. This makes it possible for this structure to achieve dynamic infrared camouflage by controlling the surface infrared emissivity. Figure 4(b) and 4(c) The diagram illustrates the variation of microwave absorption spectra with graphene conductivity. When the graphene layer is in a low-resistivity state (conductivity of 120 Ω / sq), the microwave spectrum exhibits low absorption (high reflection), with reflectivity exceeding 30% within the microwave spectral range (2 GHz-18 GHz). When the graphene layer is in a high-resistivity state (conductivity of 700 Ω / sq), due to impedance matching, the microwave spectrum exhibits high absorption (low reflection), thus achieving the effect of a microwave stealth surface. Specifically, when the incident electromagnetic wave is in the 4 GHz-15 GHz frequency range, its spectral reflectivity is less than 5%. In particular, at the dual frequencies of 6 GHz and 13 GHz, by switching the graphene impedance mode, the reflection and transmission suppression ratio reaches as high as 15 dB. This dual-spectral dynamic modulation will generate some new dynamic stealth strategies, leading to some disruptive technologies for multispectral camouflage and stealth.

[0048] The absorption mechanisms of mid-infrared radiation and microwave radiation can be quantitatively analyzed and proven using the principle of impedance matching.

[0049] like Figure 5As shown, the electric field and impedance diagrams at the resonance peaks of the phase change material in both crystalline and amorphous states are presented. It can be seen from the figure that when the phase change material is in the amorphous state, although the absorption (emission) in the infrared spectrum is not obvious, there is still some absorption (emission). This weak absorption is mainly due to the strong ohmic loss of the substrate metal material. When the phase change material is in the crystalline state (c-GST), absorption (emission) mainly occurs within the phase change material itself. The absorption of incident light by the phase change material produces significant emission near 10 μm in the emission spectrum of Figure 4(a).

[0050] exist Figure 6 In the figure, we present a comparison of the spectra under two methods: finite-time difference method and transmission line theory. It can be seen from the figure that graphene will produce obvious differences in microwave reflection when it is in a high-resistivity state and a low-resistivity state. Within a certain wide spectral range (4-15GHz), the reflection suppression ratio is higher than 10dB. The results of experimental simulation and theoretical calculation are in good agreement.

[0051] The dual-spectral dynamic stealth material based on layered design provided in this embodiment can achieve discrete dynamic control of the 8-14 micrometer infrared absorption spectrum and the 2-18 GHz microwave absorption spectrum.

[0052] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A dual-spectral dynamic stealth material based on a layered design, characterized in that: The system comprises, from top to bottom, a mid-infrared phase-change grating layer, an intermediate dielectric transition layer, and a microwave impedance matching layer. The mid-infrared phase-change grating layer consists of square protrusions periodically arranged on the upper surface of the intermediate dielectric transition layer for infrared light absorption. Each square protrusion includes a mid-infrared phase-change layer and a mid-infrared reflective layer stacked from top to bottom. The mid-infrared phase-change layer is made of a phase-change material, and the mid-infrared reflective layer is made of a metallic material. The intermediate dielectric layer, located between the mid-infrared phase-change grating layer and the microwave impedance matching layer, facilitates the transition from infrared spectral modulation to microwave spectral modulation. The microwave impedance matching layer comprises, from top to bottom, a graphene film, a high-resistivity layer, a first spacer layer, a loss layer, a second spacer layer, and a microwave reflective layer. Both the first and second spacer layers are microwave-transparent materials, and the microwave reflective layer is made of a metallic material. The sheet resistance of the graphene film is adjusted by controlling the gate voltage, thereby controlling the microwave absorption spectrum. The sheet resistance Ω1 of the high-resistivity layer ranges from 2000 to 8000 Ω / sq, and the sheet resistance Ω2 of the loss layer ranges from 100 to 500 Ω / sq; the thickness of both the first spacer layer and the second spacer layer is h3, and the thickness h3 ranges from 3 mm to 100 mm. The mid-infrared phase change layer is a sulfide-based phase change material with a thickness H1 between 100 nm and 800 nm; the thickness H2 of the mid-infrared reflective layer is between 50 nm and 300 nm; the side length W of the square protrusions is 0.6 μm to 3 μm, and the period P of the square protrusion array is 2 μm to 5 μm; the intermediate medium transition layer is a transparent medium material with a thickness H3 between 0.1 mm and 1 mm. The sulfur-based phase change material is Ge2Sb2Te5, Ge3Sb2Te6, or GeTe; The sheet resistance of the graphene film is in the range of 120-700Ω / sq, and the thickness h1 is in the range of 50μm-200μm; the high-resistivity layer is a polyimide film coated with high-resistivity conductive ink, and the loss layer is a polyimide film coated with low-resistivity conductive ink. The thickness of both the high-resistivity layer and the loss layer is h2, and the thickness of h2 is in the range of 20μm-100μm.

2. The dual-spectral dynamic stealth material based on layered design as described in claim 1, characterized in that: The square protrusion array has a period P = 3 μm, a side length W = 1.8 μm, a mid-infrared phase transition layer of Ge2Sb2Te5 with a thickness H1 = 440 nm, a mid-infrared reflective layer of gold with a thickness H2 = 200 nm, an intermediate dielectric transition layer of silicon dioxide with a thickness H3 = 0.2 mm, a graphene film 20 with a thickness h1 = 200 μm, a high-resistivity layer with a sheet resistance Ω1 = 5000 Ω / sq, a loss layer with a sheet resistance Ω2 = 250 Ω / sq and a thickness h2 = 50 μm, and both the first and second spacer layers are made of polyethylene with a thickness h3 = 7.5 mm.

3. The dual-spectral dynamic stealth material based on layered design as described in claim 1 or 2, characterized in that: The graphene film includes a PET substrate, on which 1-5 layers of graphene are disposed.

4. The dual-spectral dynamic stealth material based on layered design as described in claim 3, characterized in that: The PET substrate has three layers of graphene on it.

5. The dual-spectral dynamic stealth material based on layered design as described in claim 1, characterized in that: The mid-infrared reflective layer is made of gold, silver, copper, chromium, or tungsten.

6. The dual-spectral dynamic stealth material based on layered design as described in claim 1, characterized in that: The intermediate medium transition layer is silicon dioxide, titanium dioxide, or zinc sulfide.

7. The dual-spectral dynamic stealth material based on layered design as described in claim 1, characterized in that: The microwave reflective layer is made of gold, silver, copper, chromium, or tungsten.

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