A coating control method for semiconductor process equipment and semiconductor process equipment

Abstract

An embodiment of the present invention provides a coating control method for semiconductor process equipment and semiconductor process equipment, the method comprising: obtaining abnormal discharge information within a target time; adding an increment corresponding to the abnormal discharge information to the compensation process time; comparing the executed process time plus the target time with the process setting time, and continuing the process stage and executing the next target time process, or updating the process time according to the updated compensation process time, performing the compensation process stage, executing the next target time process, or terminating the process, based on whether the process compensation stage has been reached and / or whether the abnormal discharge information meets preset requirements. The impact of abnormal discharge on coating is automatically incorporated into the entire process through an automated algorithm, and the impact of abnormal discharge on coating film thickness or quality can be automatically compensated, thereby improving the automation level of the machine, avoiding the problem of reduced production capacity due to abnormal discharge, and saving production costs.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a film coating control method for semiconductor process equipment and semiconductor process equipment. Background Art

[0002] The existing technology for solving the impact of abnormal discharge on the thickness or quality of the coating is as follows: minor or short-term abnormal discharge will not cause the process to be terminated, and the abnormal discharge phenomenon will be passively waited for to disappear on its own (such as debris automatically falling away from the discharge area and no longer interfering with normal discharge, stuck points, the contact state at the electrode returns to normal, and other occasional abnormal discharge conditions no longer exist). For some particularly serious and continuous abnormal discharges, the process will be forcibly terminated. After the process is completed, the coating time is modified in the original process program or the compensation coating process time is increased, and the repair plating process is manually started to minimize the impact of abnormal discharge on the film thickness and film quality. In other words, the existing technology for solving the impact of abnormal discharge on the coating is to passively wait for the abnormal discharge to disappear on its own, or the operator relies on experience to edit the repair plating process and then manually start the repair plating process again. This is very blind and has poor accuracy. Especially in the case of complex processes with multiple coating steps, the operability is extremely poor. Summary of the Invention

[0003] In view of the above problems, embodiments of the present invention are proposed to provide a film coating control method for semiconductor process equipment and a corresponding semiconductor process equipment that overcomes the above problems or at least partially solves the above problems.

[0004] To solve the above problems, an embodiment of the present invention discloses a coating control method for semiconductor process equipment, wherein the semiconductor process equipment performs a plasma-based coating process on a wafer, wherein the coating process includes a process stage and a process compensation stage. The method includes:

[0005] In the process stage according to the process setting time t, determining the target time and executing the process of the target time;

[0006] Acquiring abnormal discharge information within the target time;

[0007] Adding a time increment corresponding to the abnormal discharge information within the target time to the compensation process time Q;

[0008] Comparing the expected process time obtained by adding the executed process time P to the target time with the process setting time t to determine whether the process compensation stage has been reached; and determining whether the abnormal discharge information meets the preset requirements;

[0009] Depending on whether the process compensation stage is reached and / or whether the abnormal discharge information meets the preset requirements, it is determined whether to continue the process stage and execute the process of the next target time, or to update the process setting time t according to the updated compensation process time Q, perform the compensation process stage, and execute the process of the next target time, or to end the process.

[0010] Optionally, obtaining abnormal discharge information within the target time includes:

[0011] Obtain an abnormal discharge time ratio within the target time; the abnormal discharge time ratio is r'=nL / t', where n is the number of abnormal discharges detected within the target time t', and L is the unit time of a single abnormal discharge.

[0012] Optionally, in the process compensation stage according to the process setting time t, determining a target time and executing the process of the target time includes:

[0013] During the process of performing the process with the process setting time t as the initial value, if the executed process time P plus the unit monitoring time Δ is less than or equal to the process setting time t, determining the target time as the unit monitoring time Δ and performing the process for the unit monitoring time Δ;

[0014] The step of increasing the compensation process time Q by a time increment corresponding to the abnormal discharge information within the target time includes:

[0015] Adding a first time increment Δ*r1 to the compensation process time Q; wherein r1 is a first abnormal discharge time ratio within the target time of the executed unit monitoring time;

[0016] The step of comparing the expected process time obtained by adding the executed process time P to the target time with the process setting time t to determine whether the process compensation stage has been reached includes:

[0017] If the expected process time obtained by adding the executed process time P to the unit monitoring time Δ is less than or equal to the process setting time t, it is determined that the process compensation stage has not been reached;

[0018] If the expected process time obtained by adding the executed process time P to the unit monitoring time Δ is greater than the process setting time t, it is determined that the process compensation stage has been reached.

[0019] Optionally, judging, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets preset requirements, whether to continue the process stage and execute a process for the next target time, or updating the process setting time t according to the updated compensation process time Q, and executing the compensation process stage and executing a process for the next target time, or ending the process, includes:

[0020] If the process compensation stage has not been reached, and the first abnormal discharge time ratio r1 is less than the abnormal discharge time ratio threshold r max , then proceed to the next process with the unit monitoring time Δ as the target time.

[0021] Optionally, judging, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets preset requirements, whether to continue the process stage and execute a process for the next target time, or updating the process setting time t according to the updated compensation process time Q, and executing the compensation process stage and executing a process for the next target time, or ending the process, includes:

[0022] If the process compensation stage has not been reached, and the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max , the process is stopped, and after the process environment is adjusted to meet the process conditions, the next process with the unit monitoring time Δ as the target time is carried out.

[0023] Optionally, judging, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets preset requirements, whether to continue the process stage and execute a process for the next target time, or updating the process setting time t based on the updated compensation process time Q, and then proceeding to the compensation process stage and executing a process for the next target time, or ending the process, further includes:

[0024] If the process compensation stage is reached, the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max , if the first time length is greater than the compensation process time accuracy S, and the first time length is greater than the unit monitoring time Δ, the process is stopped, and the process environment is adjusted to meet the process conditions, and then the next process with the unit monitoring time Δ as the target time is carried out. The first time length is the process setting time t minus the executed process time P, plus the updated compensation process time Q.

[0025] Optionally, judging, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets preset requirements, whether to continue the process stage and execute a process for the next target time, or updating the process setting time t based on the updated compensation process time Q, and then proceeding to the compensation process stage and executing a process for the next target time, or ending the process, further includes:

[0026] If the process compensation stage is reached, the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max , if the first time length is greater than the compensation process time accuracy S and the first time length is less than or equal to the unit monitoring time Δ, the process is stopped, and the process environment is adjusted to meet the process conditions and then the process with the first time length as the target time is carried out; wherein, the compensation process time accuracy S is less than the unit monitoring time Δ.

[0027] Optionally, in the process stage of performing the process according to the process setting time t, determining a target time and performing the process for the target time includes:

[0028] In the process stage with the process setting time t as the initial value, determining the target time to be the first duration and performing the process of the first duration;

[0029] The step of increasing the compensation process time Q by a time increment corresponding to the abnormal discharge information within the target time includes:

[0030] A second time increment (t-P+Q)*r2 is added to the compensation process time Q, where r2 is a second abnormal discharge time ratio within the executed first target time.

[0031] Optionally, according to whether the process compensation stage is reached and / or whether the abnormal discharge information meets preset requirements, it is determined whether to continue the process stage and perform a process of the next target time, or to update the process setting time t according to the updated compensation process time Q, perform the compensation process stage, and perform a process of the next target time, or to end the process, including:

[0032] When the process compensation stage is reached, if the current value of the compensation process time Q is greater than the compensation process time precision S, and the second abnormal discharge time ratio r2 is greater than the abnormal discharge time ratio threshold r max , then the process setting time t is updated to the current value of the compensation process time Q, the executed process time P is updated to 0, and then the compensation process time Q is updated to 0, and after the process environment is adjusted to meet the process conditions, the next process with the first time length as the target time is carried out.

[0033] Optionally, according to whether the process compensation stage is reached and / or whether the abnormal discharge information meets preset requirements, it is determined whether to continue the process stage and perform a process of the next target time, or to update the process setting time t according to the updated compensation process time Q, perform the compensation process stage, and perform a process of the next target time, or to end the process, including:

[0034] When the process compensation stage is reached, if the current value of the compensation process time Q is greater than the compensation process time precision S, and the second abnormal discharge time ratio r2 is less than or equal to the abnormal discharge time ratio threshold r max , then the process setting time t is updated to the current value of the compensation process time Q, the executed process time P is updated to 0, and then the compensation process time Q is updated to 0, and the next process with the first duration as the target time is carried out.

[0035] Optionally, judging, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets preset requirements, whether to continue the process stage and execute a process for the next target time, or updating the process setting time t according to the updated compensation process time Q, and executing the compensation process stage and executing a process for the next target time, or ending the process, includes:

[0036] If the process compensation stage is reached and the first abnormal discharge time ratio r1 is less than the abnormal discharge time ratio threshold r max , then proceed to the next process with a second duration as the target time, where the second duration is the process setting time t minus the executed process time P.

[0037] Optionally, in the process stage of performing the process according to the process setting time t, determining a target time and performing the process for the target time includes:

[0038] In the process stage according to the process setting time t, determining the target time as the second duration and performing the process of the second duration;

[0039] The step of increasing the compensation process time Q by a time increment corresponding to the abnormal discharge information within the target time includes:

[0040] A third time interval increment (tP)*r3 is added to the compensation process time Q, where r3 is a third abnormal discharge time ratio executed with the second time length as the target time.

[0041] Optionally, judging, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets preset requirements, whether to continue the process stage and execute a process for the next target time, or updating the process setting time t according to the updated compensation process time Q, and executing the compensation process stage and executing a process for the next target time, or ending the process, includes:

[0042] When the process compensation stage is reached, if the current value of the compensated process time Q is greater than the compensated process time precision S, the process setting time t is updated to the compensated process time Q, the executed process time P is updated to 0, and then the compensated process time Q is updated to 0;

[0043] If the unit monitoring time Δ is less than or equal to the updated process setting time t, the next process with the unit monitoring time Δ as the target time is performed.

[0044] Optionally, judging, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets preset requirements, whether to continue the process stage and execute a process for the next target time, or updating the process setting time t according to the updated compensation process time Q, and executing the compensation process stage and executing a process for the next target time, or ending the process, includes:

[0045] If the unit monitoring time Δ is less than or equal to the updated process setting time t, then performing a process with the updated process setting time t as the target time;

[0046] In the process stage of performing the process according to the process setting time t, determining the target time and executing the process of the target time includes:

[0047] In the process stage according to the process setting time t, determining the target time as the updated process setting time t, and performing the process with the updated process setting time t;

[0048] The step of increasing the compensation process time Q by a time increment corresponding to the abnormal discharge information within the target time includes:

[0049] A fourth time increment t*r4 is added to the updated compensation process time Q, where r4 is a fourth abnormal discharge time ratio within the target time using the updated process setting time t as the target time.

[0050] Optionally, judging, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets preset requirements, whether to continue the process stage and execute a process for the next target time, or updating the process setting time t according to the updated compensation process time Q, and executing the compensation process stage and executing a process for the next target time, or ending the process, includes:

[0051] When the process compensation stage is reached, if the fourth abnormal discharge time ratio r4 is less than or equal to the abnormal discharge time ratio threshold r max , and the current value of the compensation process time Q is greater than the compensation process time accuracy S, then the process setting time t is updated to the current value of the compensation process time Q again, the executed process time P is updated to 0 again, and then the compensation process time Q is updated to 0 again, and the next process with the updated process setting time t as the target time is carried out.

[0052] Optionally, judging, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets preset requirements, whether to continue the process stage and execute a process for the next target time, or to update the process setting time t based on the updated compensation process time Q, to proceed to the process compensation stage, and to execute a process for the next target time, or to end the process, includes:

[0053] If the process compensation stage is reached and the compensation process time Q is less than or equal to the time accuracy S of the compensation process, the process is terminated.

[0054] An embodiment of the present invention further discloses a semiconductor process device, which performs a plasma-based coating process on a wafer. The coating process includes a process stage and a process compensation stage. The semiconductor process device further includes:

[0055] A controller is configured to, in performing the process stage according to a process setting time t, determine a target time and execute a process for the target time; obtain abnormal discharge information within the target time; increase a compensation process time Q by an increment corresponding to the abnormal discharge information within the target time; compare an expected process time obtained by adding the executed process time P to the target time with the process setting time t, and determine whether the abnormal discharge information meets a preset requirement; and determine, based on whether the process compensation stage has been reached and / or whether the abnormal discharge information meets the preset requirement, whether to continue the process stage and execute a process for the next target time, or to update the process setting time t according to the updated compensation process time Q, perform the compensation process stage, and execute a process for the next target time, or to end the process.

[0056] The embodiments of the present invention include the following advantages:

[0057] In an embodiment of the present invention, during the process phase according to the process set time t, a target time is determined and the process for the target time is executed; abnormal discharge information within the target time is obtained; a time increment corresponding to the abnormal discharge information within the target time is added to the compensation process time Q; an expected process time obtained by adding the executed process time P to the target time is compared with the process set time t, and a determination is made as to whether the abnormal discharge information meets preset requirements; and based on whether the process compensation phase has been reached and / or whether the abnormal discharge information meets preset requirements, a determination is made as to whether to continue the process phase and execute the process for the next target time, or to update the process set time t according to the updated compensation process time Q, execute the compensation process phase, and execute the process for the next target time, or to terminate the process. By automatically incorporating the impact of abnormal discharge on the coating into the overall process through an automated algorithm, the impact of abnormal discharge on the coating thickness or quality can be automatically compensated, thereby improving the automation level of the machine, avoiding the problem of reduced production capacity due to abnormal discharge, and saving production costs. The present invention also has the advantages of a wide range of applicability and precise parameter control, making it particularly suitable for scenarios requiring fine coating. BRIEF DESCRIPTION OF THE DRAWINGS

[0058] Figure 1 This is a flowchart of the steps of a coating control method for a conductor process equipment provided by an embodiment of the present invention;

[0059] Figure 2a This is a flow chart of an algorithm structure for automatically compensating for the effect of abnormal discharge on coating thickness or quality in a PECVD device, provided by an embodiment of the present invention;

[0060] Figure 2b This is a flow chart of another algorithm structure for automatically compensating for the effect of abnormal discharge on coating film thickness or quality in a PECVD device, provided by an embodiment of the present invention;

[0061] Figure 2c This is a flow chart of another algorithm structure for automatically compensating for the effect of abnormal discharge on coating film thickness or quality in a PECVD device, provided by an embodiment of the present invention;

[0062] Figure 3 This is a structural block diagram of a semiconductor process equipment provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0063] To make the above-mentioned objects, features, and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments. It is obvious that the embodiments described are only some embodiments of the present invention, rather than all embodiments. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments of the present invention are within the scope of protection of the present invention.

[0064] The existing technology solves the impact of abnormal discharge on the coating during the coating process by passively waiting for the abnormal discharge to disappear on its own, or the operator edits the repair plating process based on experience and then manually starts the repair plating process again. There is no automatic correction or compensation mechanism, and the cumulative impact of multiple minor abnormal discharges on the coating is not taken into account. A set of automated algorithms has not been formed to automatically incorporate the impact of abnormal discharge on the coating into the entire process, resulting in the film thickness or quality after repair plating still not meeting the standards, a high repair plating failure rate, and a low degree of automation.

[0065] Based on this, the present invention intends to provide a coating control method for semiconductor process equipment and a corresponding semiconductor process equipment that overcomes the above problems or at least partially solves the above problems.

[0066] The film coating control method for semiconductor process equipment according to an embodiment of the present invention can be applied to various plasma equipment with discharge risks. The present invention uses plasma enhanced chemical vapor deposition (PECVD) equipment as an example for illustration.

[0067] Plasma-enhanced chemical vapor deposition (PECVD) equipment is a crucial component of the chemical vapor deposition (CVD) process on silicon wafers in semiconductor production lines. It primarily consists of a heating furnace, radio frequency (RF) system, graphite boat, gas flow system, and a feeder / receiver. This invention relates to PECVD technology, particularly process compensation techniques for abnormal discharges in PECVD chambers.

[0068] In the solar photovoltaic field, horizontal plasma-enhanced chemical vapor deposition (PECVD) equipment utilizes a high-frequency electric field within a high-vacuum quartz chamber to decompose process gases SiH4 and NH3, depositing Si3N4 thin films on the silicon wafer surface. In the integrated circuit field, PECVD equipment utilizes capacitively coupled plasma to decompose process gases SiH4 and N2O, depositing SiO2 thin films on the silicon wafer surface. In PECVD equipment, maintaining a uniform and stable plasma within the deposition area directly impacts film quality. Therefore, ensuring stable plasma within the chamber is a key design consideration. Designers typically optimize the chamber's optimal size and shape, electrode introduction method, radio frequency system matching, and gas introduction method to ensure stable plasma discharge.

[0069] However, no matter how the equipment structure, RF system, and gas introduction are optimized, abnormal plasma discharge is inevitable. In particular, abnormal discharge caused by non-structural factors cannot be improved by optimizing the structure. There are many factors that cause discharge in equipment such as PECVD. In photovoltaic PECVD, abnormal discharge can occur when a wafer on one side of the graphite boat groove breaks and comes into contact with the wafer on the opposite electrode, or when two wafers in the same groove are close to each other due to warping. Poor contact at the stuck point of the wafer can cause abnormal discharge. Abnormal discharge can occur when the graphite boat and the metal electrode are not in good contact. Severe deformation of the graphite boat can cause abnormal discharge. In flat-plate PECVD, the accumulation of a large amount of charge at the edge of the wafer can cause abnormal discharge, and some large particles can also cause abnormal discharge.

[0070] If abnormal discharges exceed a certain frequency, ineffective coating increases, significantly thinning the film thickness. This can also increase the fragmentation rate and particle contamination within the chamber, leading to a decrease in film quality. Aborting the process due to abnormal discharges can directly render the wafer scrapped. Even in certain application scenarios, multiple re-coatings are possible, but these require re-entry and re-exit of the chamber and re-heating. Frequent re-coatings can severely reduce machine productivity.

[0071] Therefore, PECVD equipment needs to monitor abnormal discharge phenomena and automatically incorporate their impact on the coating process into the overall process. This can be achieved by real-time monitoring of the number of abnormal discharges (or their frequency or intensity), automatically halting the process based on their severity, or by evaluating and calculating the discharge phenomena using a reasonable algorithm. A rescue mechanism can be established to automatically address the impact of abnormal discharge on the coating while meeting product quality control requirements, minimizing its impact on film thickness, quality, and equipment production capacity.

[0072] One of the core concepts of the embodiments of the present invention is to monitor the number of abnormal discharges (or the frequency or intensity of discharges) in real time and feed the monitoring results back to the process control program in real time. The control end automatically calculates the severity of the abnormal discharge based on the algorithm structure and user parameter settings, triggers the corresponding process program or takes automatic process stop measures according to the severity, or automatically corrects the process parameters online by executing rescue measures to avoid the impact of abnormal discharge on film thickness, quality and equipment production capacity, while improving the automation level of the machine, avoiding the problem of reduced production capacity due to abnormal discharge, and saving production costs.

[0073] Reference Figure 1 , shows a flowchart of a method for controlling film coating of a semiconductor process equipment provided by an embodiment of the present invention. The semiconductor process equipment performs a film coating process on a wafer based on plasma. The film coating process includes a process stage and a process compensation stage. The method may specifically include the following steps:

[0074] Step 101 : in the process stage according to the process setting time t, determine the target time and execute the process of the target time.

[0075] As an example, before performing the coating process, time parameters can be set in advance, such as setting t as the process setting time; setting P as the process time, and setting the initial value of P to 0; monitoring the process, setting Δ as a unit monitoring time, and setting the Δ range to 1~100 s, preferably 5 s; setting Q as the process time that needs to be compensated, and setting the initial time of Q to 0; and setting T as the RF discharge deposition process temperature.

[0076] For example, while the process is being performed according to the process setting time t, a target time may be determined and the process may be performed within the target time.

[0077] Step 102: Acquire abnormal discharge information within the target time.

[0078] In one embodiment, an abnormal discharge time ratio within the target time is obtained; the abnormal discharge time ratio is r'=nL / t', where n is the number of abnormal discharges detected within the target time t', and L is the unit time of a single abnormal discharge.

[0079] For example, abnormal RF discharge detection parameters can be set within the RF generator to detect abnormal changes in RF current, voltage, power, and other values. Once the abnormal discharge conditions are met, an abnormal discharge is triggered and recorded. n can be defined as the number of abnormal discharges detected, and L can be defined as the minimum unit time for a single abnormal discharge. L can be a fixed value determined by the gear parameters provided by the RF generator itself, where nL represents the time for n abnormal discharges. The parameter values ​​and setting methods used vary depending on the RF generator used, and are not limited in this embodiment of the present invention.

[0080] Step 103: adding a time increment corresponding to the abnormal discharge information within the target time to the compensation process time.

[0081] In an embodiment of the present invention, during the process according to the process setting time, abnormal discharge information within a period of time can be monitored. When the compensation process time is reached, a time increment corresponding to the abnormal discharge information within the monitoring time can be added to the compensation process time.

[0082] For example, during the coating process, the corresponding compensation process time increment can be calculated based on the target time and the abnormal discharge information within the target time. For example, if the target time is 5 seconds and the abnormal discharge time ratio r' within the target time is 10%, the compensation process time is increased by 0.5 seconds.

[0083] Step 104 : Compare the expected process time obtained by adding the executed process time P to the target time with the process setting time t to determine whether the process compensation stage has been reached; and determine whether the abnormal discharge information meets the preset requirements.

[0084] In an embodiment of the present invention, it is possible to determine whether the expected process time obtained by adding the executed process time P to the target time is greater than the process setting time t to determine whether the process compensation stage has been reached; at the same time, it is determined whether the abnormal discharge information meets the preset requirements.

[0085] For example, if the expected process time is greater than the process setting time t, it means that the target time can reach the process compensation time; if the expected process time is less than or equal to the process setting time t, it means that the target time has been executed, the process endpoint has not been reached, and the process compensation time has not been reached.

[0086] In one embodiment, if the expected process time obtained by adding the executed process time P to the unit monitoring time Δ is less than or equal to the process setting time t, it is determined that the process compensation stage has not been reached; if the expected process time obtained by adding the executed process time P to the unit monitoring time Δ is greater than the process setting time t, it is determined that the process compensation stage has been reached.

[0087] Exemplarily, if the executed process time P plus the unit monitoring time Δ is less than or equal to the process setting time t, it can be determined that the process compensation stage has not been reached; if the executed process time P plus the unit monitoring time Δ is greater than the process setting time t, it can be determined that the process compensation stage has been reached.

[0088] In one embodiment, in the process compensation stage with the process setting time t as the initial value, if the executed process time P plus the unit monitoring time Δ is less than or equal to the process setting time t, the target time is determined to be the unit monitoring time Δ and the process of the unit monitoring time Δ is executed; the time increment corresponding to the abnormal discharge information within the target time is increased to the compensation process time Q, including: adding a first time increment Δ*r1 to the compensation process time Q; the r1 is the first abnormal discharge time ratio within the target time of the executed unit monitoring time.

[0089] For example, if P + Δ ≤ t, the target time can be determined as the unit monitoring time Δ. A process can be performed for a unit monitoring time interval Δ. The abnormal discharge occurs for a proportion r1 of the time in this unit monitoring time interval. If the executed process time P increases by Δ, the required compensation process time Q increases by Δ*r1.

[0090] In one embodiment, in the process stage with the process setting time t as the initial value, the target time is determined to be the first duration and the process of the first duration is executed; the time increment corresponding to the abnormal discharge information within the target time is increased to the compensation process time Q, including: adding a second time increment (t-P+Q)*r2 to the compensation process time Q, where r2 is the ratio of the second abnormal discharge time within the target time of the first duration that has been executed.

[0091] For example, when the first time duration t-P+Q is determined to be the target time, the process of the first time duration may be executed, and the second abnormal discharge time ratio r2 within the target time of the executed first time duration may be calculated, and the second time increment (t-P+Q)*r2 of the compensation process time Q may be calculated, and the second time increment (t-P+Q)*r2 may be added to the compensation process time Q.

[0092] In one embodiment, in the process stage according to the process setting time t, the target time is determined to be the second duration and the process of the second duration is executed; the increment corresponding to the abnormal discharge information within the target time is increased to the compensation process Q time, including: adding a third time increment (tP)*r3 to the compensation process time Q, where r3 is the ratio of the third abnormal discharge time that has been executed within the target time with the second duration.

[0093] Exemplarily, when the target time is determined to be the second duration tP, a process of the second duration can be executed, the abnormal discharge time ratio r3 within the second duration can be calculated, and the increment of the compensation process time Q by a third time (tP)*r3 during the second duration process can be calculated, and the third time increment (tP)*r3 can be added to the compensation process time Q.

[0094] In one embodiment, if the unit monitoring time Δ is less than or equal to the updated process setting time t, the updated process setting time t is used as the target time; in the process stage according to the process setting time t, the target time is determined and the process of the target time is executed, including: in the process stage according to the process setting time t, the target time is determined to be the updated process setting time t and the process of the updated process setting time t is executed; the time increment corresponding to the abnormal discharge information within the target time is increased to the compensation process time Q, including: adding a fourth time increment t*r4 to the updated compensation process time Q, where r4 is the fourth abnormal discharge time ratio within the target time with the updated process setting time t as the target time.

[0095] For example, if the unit monitoring time Δ is less than or equal to the updated process setting time t, the updated process setting time t may be determined as the target time, and the process may be executed for the updated process setting time t. An abnormal discharge time ratio r4 within the updated process setting time t may be calculated, and a fourth time increment t*r4 of the updated compensation process time Q may be calculated, and the fourth time increment t*r4 may be added to the updated compensation process time Q.

[0096] In one embodiment, during the process of performing the process with the updated process setting time t, the target time is determined to be the process with the again updated process setting time t and the process with the again updated process setting time t is executed; the time increment corresponding to the abnormal discharge information within the target time is increased to the compensation process time Q, including: adding a fifth time increment t*r5 to the updated compensation process time Q, where r5 is the fifth abnormal discharge time ratio within the target time with the again updated process setting time t.

[0097] For example, when it is determined that the process setting time t after being updated again is the target time, the process setting time t after being updated again can be executed, the abnormal discharge time ratio r5 within the process setting time t after being updated again and the fifth time increment t*r5 required for the updated compensation process time Q can be calculated, and the fifth time increment t*r5 can be added to the updated compensation process time Q.

[0098] Step 105, based on whether the process compensation stage has been reached and / or whether the abnormal discharge information meets the preset requirements, determine: continue the process stage and execute the process of the next target time, or update the process setting time t according to the updated compensation process time Q, perform the compensation process stage, and execute the process of the next target time, or end the process.

[0099] For example, S can be pre-set as the time judgment accuracy of whether compensation is required, that is, the compensation process time accuracy (that is, the minimum compensation time), satisfying S<Δ. The range of S can be set to 0.01~10 s, preferably 1 s. If the time required for compensation is less than S, it means that no compensation is required; r can be pre-set max is the abnormal discharge time ratio threshold, ranging from 1 to 50%, preferably 10%. For example, it can be set that the abnormal discharge time ratio r1 within the unit monitoring time is not allowed to exceed the abnormal discharge time ratio threshold r max Once it is determined that r1>r max , it means that the abnormal discharge time ratio exceeds the maximum allowable value r max Before the subsequent re-plating, operations such as cavity cleaning, re-placing the sheet, and adjusting the electrode position must be performed, otherwise the final coating film thickness or quality will not meet the standards.

[0100] For example, the process setting time t, the executed process time P, the unit monitoring time Δ, the compensation process time Q, the compensation process time accuracy S, the abnormal discharge time ratio threshold r, etc. can be preset. max Depending on whether the process compensation stage is reached and / or whether the abnormal discharge information meets the preset requirements, it can be determined whether to continue the process stage and execute the process of the next target time, or to update the process setting time t according to the updated compensation process time Q, to proceed to the compensation process stage, and execute the process of the next target time, or to end the process. After the parameters are set, you can follow the steps below: Figure 2a 、 Figure 2b 、 Figure 2c The figure shows a flow chart of an algorithm structure for automatically compensating for the influence of abnormal discharge on the thickness or quality of the coating film in a PECVD device provided by an embodiment of the present invention, so as to perform coating control.

[0101] In one embodiment, if the process compensation stage has not been reached and the first abnormal discharge time ratio r1 is less than the abnormal discharge time ratio threshold r max , then proceed to the next process with the unit monitoring time Δ as the target time.

[0102] For example, when executing a process with a unit monitoring time Δ, it can be determined whether the process time has reached the preset process time, that is, it can be determined whether the executed process time P plus the unit monitoring time Δ is greater than the process setting time t. If the executed process time P plus Δ is less than or equal to the process time t, it means that the process endpoint has not been reached and the process compensation stage has not been reached. It is necessary to determine whether the discharge ratio within the unit monitoring time Δ time interval meets the preset requirements; if the first abnormal discharge time ratio r1 is less than the abnormal discharge time ratio threshold r max , it means that the discharge ratio within the unit monitoring time interval Δ meets the preset requirements and the process can continue to the next target time.

[0103] That is, if P+Δ≤t, and r1 <r max , then proceed to the next process with the unit monitoring time Δ as the target time.

[0104] In one embodiment, if the process compensation stage has not been reached, and the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max , the process is stopped, and after the process environment is adjusted to meet the process conditions, the next process with the unit monitoring time Δ as the target time is carried out.

[0105] For example, when executing a process with a unit monitoring time Δ, it can be determined whether the process time has reached the preset process time, that is, it can be determined whether the executed process time P plus the unit monitoring time Δ is greater than the process setting time t. If the executed process time P plus Δ is less than or equal to the process time t, it means that the process endpoint has not been reached and the process compensation stage has not been reached. It is necessary to determine whether the discharge ratio within the unit monitoring time Δ time interval meets the preset requirements; if the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max , it means that the discharge ratio within the unit monitoring time Δ time interval does not meet the preset requirements and needs to be adjusted. After the process conditions are met, the process of the next target time should be carried out.

[0106] That is, if P+Δ≤t, and r1≥r max , the process is stopped, and the process environment is adjusted to meet the process conditions, and then the next process with the unit monitoring time Δ as the target time is carried out.

[0107] In one embodiment, if the process compensation stage is reached, the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max , and the first duration is less than or equal to the compensation process time accuracy S, then the process is terminated, where the first duration is the process setting time t minus the executed process time P plus the updated compensation process time Q.

[0108] For example, when executing a process with a unit monitoring time Δ, it can be determined whether the process time has reached the preset process time, that is, it can be determined whether the executed process time P plus the unit monitoring time Δ is greater than the process setting time t. If the executed process time P plus Δ is greater than the preset process time t, it means that the process compensation stage has been reached. It is necessary to first determine whether the discharge ratio r1 within the unit monitoring time Δ time interval meets the preset requirements; if the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max , it means that the discharge ratio within the unit monitoring time Δ time interval does not meet the preset requirements, and it is necessary to determine whether the first time length represented by the process setting time t minus the executed process time P, plus the compensation process time Q is greater than the compensation process time accuracy S; if the first time length is less than or equal to the compensation process time accuracy S, it means that the first time length process time required for coating can be ignored, no re-plating is required, and the process can be terminated.

[0109] That is, if P+Δ≤t, and r1≥r max , t-P+Q≤S, then the process ends.

[0110] In one embodiment, if the process compensation stage is reached, the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max If the first time length is greater than the compensation process time accuracy S and the first time length is greater than the unit monitoring time Δ, the process is stopped, and the process environment is adjusted to meet the process conditions before the next process with the unit monitoring time Δ as the target time is carried out.

[0111] For example, if the executed process time P increases by Δ and is greater than the preset process time t, it indicates that the process compensation stage has been reached, and the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max If the first time length is greater than the compensation process time accuracy S, it is necessary to further determine whether the first time length is greater than the unit monitoring time Δ. If the first time length is greater than the unit monitoring time Δ, it means that the abnormal discharge of the coating process within the unit monitoring time interval is serious, and there may be a situation of continuous abnormal discharge. It is necessary to stop the process and perform adjustment operations, such as opening the chamber for cleaning, re-loading the wafer, adjusting the electrode position, etc., and wait until the chip temperature in the reaction chamber rises to the preset temperature before starting the process of the next target time.

[0112] That is, if P+Δ≤t, and r1≥r max , t-P+Q>S, t-P+Q>Δ, then stop the process, adjust the process environment to meet the process conditions, and then proceed to the next process with the unit monitoring time Δ as the target time.

[0113] In one embodiment, if the process compensation stage is reached, the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max , if the first time length is greater than the compensation process time accuracy S and the first time length is less than or equal to the unit monitoring time Δ, the process is stopped, and the process environment is adjusted to meet the process conditions and then the process with the first time length as the target time is carried out; wherein, the compensation process time accuracy S is less than the unit monitoring time Δ.

[0114] For example, if the executed process time P increases by Δ and is greater than the preset process time t, it indicates that the process compensation stage has been reached, and the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max If the first time length is greater than the compensation process time accuracy S, it is necessary to further determine whether the first time length is greater than the unit monitoring time Δ. If the first time length is less than or equal to the unit monitoring time Δ, it means that the abnormal discharge within the target time does not meet the preset requirements, and there is a serious abnormal discharge. It is necessary to stop the process and perform adjustment operations, such as opening the chamber for cleaning, re-loading the wafer, adjusting the electrode position, etc., and wait until the chip temperature in the reaction chamber rises to the preset temperature before continuing with the process for the next target time.

[0115] That is, if P+Δ≤t, and r1≥r max , t-P+Q>S, t-P+Q≤Δ, where S<Δ, then stop the process, adjust the process environment to meet the process conditions, and then proceed to the next process with the first duration as the target time.

[0116] In one embodiment, when the process compensation stage is reached, if the current value of the compensation process time Q is less than or equal to the compensation process time accuracy S, the process is terminated.

[0117] For example, when the process compensation stage is reached, when executing the next process with the first duration as the target time, the second time increment (t-P+Q)*r2 is added to the compensation process time Q, and it can be determined whether the current value of the compensation process time Q is greater than the compensation process time accuracy S. If the current value of Q is less than or equal to the compensation process time accuracy S, it means that the abnormal discharge in the process with the first duration as the target time can be ignored in its impact on the process time Q that needs to be compensated, and the entire process is terminated.

[0118] That is, after running the process of the next time interval t-P+Q, the process time Q that needs to be compensated increases by (t-P+Q)*r', and at this time Q≤S, the process is terminated.

[0119] In one embodiment, when the process compensation stage is reached, if the current value of the compensation process time Q is greater than the compensation process time precision S, and the second abnormal discharge time ratio r2 is greater than the abnormal discharge time ratio threshold r max , then the process setting time t is updated to the current value of the compensation process time Q, the executed process time P is updated to 0, and then the compensation process time Q is updated to 0, the adjustment operation is performed, and after the process conditions are met, the next process with the first time length as the target time is performed.

[0120] For example, when the process compensation stage is reached, when executing the next process with the first time length as the target time, the second time increment (t-P+Q)*r2 is added to the compensation process time Q. If the current value of the compensation process time Q is greater than the compensation process time accuracy S, and the second abnormal discharge time ratio r2 is greater than the abnormal discharge time ratio threshold r max , it means that during the execution of the process with the first target time, abnormal discharge has seriously affected the coating thickness or quality, and it is necessary to update the parameters, stop the process, and perform adjustment operations, such as opening the chamber for cleaning, re-loading the wafer, adjusting the electrode position, etc., and wait until the temperature of the wafer in the reaction chamber rises to the preset temperature before continuing to the next process with the first target time.

[0121] That is, after running the process of the next time interval t-P+Q, the process time Q that needs to be compensated increases by (t-P+Q)*r', and if Q>S at this time, r2>r max , then update the process setting time t to the current value of the compensation process time Q, update the executed process time P to 0, and then update the compensation process time Q to 0, then stop the process, and adjust the process environment to meet the process conditions, and then proceed to the next process with the first duration as the target time.

[0122] In one embodiment, when the process compensation stage is reached, if the current value of the compensation process time Q is greater than the compensation process time precision S, and the second abnormal discharge time ratio r2 is less than or equal to the abnormal discharge time ratio threshold r max , then the process setting time t is updated to the current value of the compensation process time Q, the executed process time P is updated to 0, and then the compensation process time Q is updated to 0, and the next process with the first duration as the target time is carried out.

[0123] For example, when the process compensation stage is reached, when executing the next process with the first time length as the target time, the second time increment (t-P+Q)*r2 is added to the compensation process time Q. If the current value of the compensation process time Q is greater than the compensation process time precision S, and r2≤r max, it means that the chip needs to be re-plated, the process setting time t is updated to the current value of the compensation process time Q, the executed process time P is updated to 0, and then the compensation process time Q is updated to 0, and the next process with the first duration as the target time is carried out.

[0124] In one embodiment, if the process compensation stage is reached and the first abnormal discharge time ratio r1 is less than the abnormal discharge time ratio threshold r max , then proceed to the next process with a second duration as the target time, where the second duration is the process setting time t minus the executed process time P.

[0125] For example, if the executed process time P increases by Δ and is greater than the preset process time t, it indicates that the process compensation stage has been reached, and the first abnormal discharge time ratio r1 is less than the abnormal discharge time ratio threshold r max , it means that the discharge ratio within the unit monitoring time Δ time interval meets the preset requirements and the tP time length process can continue.

[0126] That is, P+Δ≤t, and r1 <r max , then proceed to the next process with the second duration as the target time, wherein the second duration is the process setting time t minus the executed process time P.

[0127] In one embodiment, when the process compensation stage is reached, if the current value of the compensation process time Q is less than or equal to the compensation process time accuracy S, the process is terminated.

[0128] For example, when the process compensation stage is reached and the target time is determined to be the second duration tP, a process of the second duration can be executed, and a third time increment (tP)*r3 is added to the compensation process time Q. A determination can be made as to whether the current value of Q is greater than the compensation process time precision S. If Q ≤ S, the process time required for re-plating is negligible, no re-plating is required, and the process can be terminated.

[0129] In one embodiment, when the process compensation stage is reached, if the current value of the compensation process time Q is greater than the compensation process time accuracy S, the process setting time t is updated to the compensation process time Q, the executed process time P is updated to 0, and then the compensation process time Q is updated to 0; if the unit monitoring time Δ is less than or equal to the updated process setting time t, the next process with the unit monitoring time Δ as the target time is carried out.

[0130] For example, when the process compensation stage is reached and the target time is determined to be the second duration tP, a process of the second duration can be executed, and a third time increment (tP)*r3 can be added to the compensation process time Q. A determination can be made as to whether the current value of Q is greater than the compensation process time precision S. If Q>S, compensatory deposition is required. Then, t is assigned the value Q, P is assigned the value 0, and Q is assigned the value 0. A further determination is made as to whether Δ>t holds. If not, the process can be returned to continue monitoring the process for a unit time interval Δ.

[0131] In one embodiment, when the process compensation stage is reached, if Δ>t is established, the process can be returned to continue monitoring the process for a unit time interval Δ. If the fourth abnormal discharge time ratio r4 is less than or equal to the abnormal discharge time ratio threshold value r max , and the current value of the compensation process time Q is greater than the compensation process time accuracy S, then the process setting time t is updated to the current value of the compensation process time Q again, the executed process time P is updated to 0 again, and then the compensation process time Q is updated to 0 again, and the next process with the updated process setting time t as the target time is carried out.

[0132] For example, when the process compensation stage is reached and after the updated process setting time t is determined to be the target time, the process of the updated process setting time t can be performed, and the fourth time increment t*r4 is added to the updated compensation process time Q. If r4≤r max , and Q>S, then re-plating is required, t is assigned the value Q, P is assigned the value 0, Q is assigned the value 0, and the process returns to the process with a re-run time equal to the process setting time t.

[0133] In one embodiment, when the process compensation stage is reached, if the fourth abnormal discharge time ratio r4 is less than or equal to the abnormal discharge time ratio threshold r max , and the current value of the compensation process time Q is less than or equal to the compensation process time accuracy S, then the process is terminated.

[0134] For example, when the process compensation stage is reached and after the updated process setting time t is determined to be the target time, the process of the updated process setting time t can be performed, and the fourth time increment t*r4 is added to the updated compensation process time Q. If r4≤r max , and Q≤S, no re-plating is required and the process can be terminated.

[0135] In one embodiment, when the process compensation stage is reached, if the fourth abnormal discharge time ratio r4 is greater than the abnormal discharge time ratio threshold r max, and the current value of the compensation process time Q is less than or equal to the compensation process time accuracy S, then the process is terminated.

[0136] For example, when the process compensation stage is reached and after the updated process setting time t is determined to be the target time, the process of the updated process setting time t can be performed, and the fourth time increment t*r4 is added to the updated compensation process time Q. max , and Q≤S, no re-plating is required and the process can be terminated.

[0137] In one embodiment, when the process compensation stage is reached, if the fourth abnormal discharge time ratio r4 is greater than the abnormal discharge time ratio threshold r max , and the current value of the compensation process time Q is greater than the compensation process time accuracy S, then the process setting time t is updated to the current value of the compensation process time Q again, the executed process time P is updated to 0 again, and then the compensation process time Q is updated to 0 again, the process is stopped, and the process environment is adjusted to meet the process conditions, and then the next process is carried out with the updated process setting time t as the target time.

[0138] For example, when the process compensation stage is reached and after the updated process setting time t is determined to be the target time, the process of the updated process setting time t can be performed, and the fourth time increment t*r4 is added to the updated compensation process time Q. max , and Q>S, compensation deposition is required, t is assigned to Q, P is assigned to 0, Q is assigned to 0, and adjustment operations are performed, such as opening the chamber for cleaning, re-loading the wafer, adjusting the electrode position, etc., and when the temperature of the wafer in the reaction chamber rises to the preset temperature, the next process with the updated process setting time t is started again.

[0139] In one embodiment, when the process compensation stage is reached, if the current value of the compensation process time Q is less than or equal to the compensation process time accuracy S, the process is terminated.

[0140] For example, when the process compensation stage is reached and the updated process setting time t is determined to be the target time, the process with the updated process setting time t can be executed, and a fifth time increment t*r5 is added to the updated compensation process time Q. If Q ≤ S, no additional plating is required and the process can be terminated.

[0141] In one embodiment, when the process compensation stage is reached, if the compensation process time Q is greater than the compensation process time accuracy S, and the fifth abnormal discharge time ratio r5 is greater than the abnormal discharge time ratio threshold r max, then the process setting time t is updated to the current value of the compensation process time Q again, the executed process time P is updated to 0 again, and then the compensation process time Q is updated to 0 again, the process is stopped, and the process environment is adjusted to meet the process conditions and then the process is carried out with the updated process setting time t as the target time.

[0142] For example, when the process compensation stage is reached and after the updated process setting time t is determined to be the target time, the process with the updated process setting time t can be executed, and the fifth time increment t*r5 is added to the updated compensation process time Q. If Q>S, and r5>r max , it indicates that there is a serious abnormal discharge situation, t is assigned to Q, P is assigned to 0, Q is assigned to 0, the process is stopped, and adjustment operations are performed, such as opening the chamber for cleaning, re-loading the wafer, adjusting the electrode position, etc., and when the temperature of the wafer in the reaction chamber rises to the preset temperature, the next process with the updated process setting time t is started again.

[0143] In one embodiment, when the process compensation stage is reached, if the compensation process time Q is greater than the compensation process time accuracy S, and the fifth abnormal discharge time ratio r5 is less than or equal to the abnormal discharge time ratio threshold r max , then the process setting time t is updated to the current value of the compensation process time Q again, the executed process time P is updated to 0 again, and then the compensation process time Q is updated to 0 again, and the process is carried out with the again updated process setting time t as the target time.

[0144] For example, when the process compensation stage is reached and after the updated process setting time t is determined to be the target time, the process with the updated process setting time t can be executed, and the fifth time increment t*r5 is added to the updated compensation process time Q. If Q>S, and r5≤r max , then re-plating is required, and the process setting time t is updated to the current value of the compensation process time Q again, t is assigned to Q, P is assigned to 0, Q is assigned to 0 again, and the process is started with the updated process setting time t as the target time.

[0145] In an embodiment of the present invention, during the process phase according to the process set time t, a target time is determined and the process for the target time is executed; abnormal discharge information within the target time is obtained; a time increment corresponding to the abnormal discharge information within the target time is added to the compensation process time Q; an expected process time obtained by adding the executed process time P to the target time is compared with the process set time t, and a determination is made as to whether the abnormal discharge information meets preset requirements; and based on whether the process compensation phase has been reached and / or whether the abnormal discharge information meets preset requirements, a determination is made as to whether to continue the process phase and execute the process for the next target time, or to update the process set time t according to the updated compensation process time Q, execute the compensation process phase, and execute the process for the next target time, or to terminate the process. By automatically incorporating the impact of abnormal discharge on the coating into the overall process through an automated algorithm, the impact of abnormal discharge on the coating thickness or quality can be automatically compensated, thereby improving the automation level of the machine, avoiding the problem of reduced production capacity due to abnormal discharge, and saving production costs. The present invention also has the advantages of a wide range of applicability and precise parameter control, making it particularly suitable for scenarios requiring fine coating.

[0146] It should be noted that for the sake of simplicity, the method embodiments are described as a series of actions. However, those skilled in the art should be aware that the embodiments of the present invention are not limited by the order of the actions described, because according to the embodiments of the present invention, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in this specification are all preferred embodiments, and the actions involved are not necessarily required by the embodiments of the present invention.

[0147] Reference Figure 3 , shows a structural block diagram of a semiconductor process equipment device provided by an embodiment of the present invention. The semiconductor process equipment 201 performs a plasma-based coating process on a wafer. The coating process includes a process stage and a process compensation stage. The semiconductor process equipment may further include:

[0148] The controller 2011 is used to determine the target time and execute the process of the target time in the process stage according to the process setting time t; obtain the abnormal discharge information within the target time; increase the compensation process time Q by an increment corresponding to the abnormal discharge information within the target time; compare the expected process time obtained by adding the executed process time P to the target time with the process setting time t, and judge whether the abnormal discharge information meets the preset requirements; and judge, based on whether the process compensation stage has been reached and / or whether the abnormal discharge information meets the preset requirements: continue the process stage and execute the process of the next target time, or update the process setting time t according to the updated compensation process time Q, perform the compensation process stage, and execute the process of the next target time, or end the process.

[0149] In an optional embodiment of the present invention, the controller is configured to obtain an abnormal discharge time ratio within the target time; the abnormal discharge time ratio is r'=nL / t', where n is the number of abnormal discharges detected within the target time t', and L is the minimum unit time of a single abnormal discharge.

[0150] In an optional embodiment of the present invention, the controller is used to determine the target time as the unit monitoring time Δ and execute the process of the unit monitoring time Δ if the executed process time P plus the unit monitoring time Δ is less than or equal to the process setting time t during the process compensation stage; the increment corresponding to the abnormal discharge information within the target time added to the compensation process time includes: adding a first time increment Δ*r1 to the compensation process time Q; the r1 is the first abnormal discharge time ratio within the target time of the executed unit monitoring time; the comparison of the expected process time obtained by adding the executed process time P to the target time with the process setting time t to determine whether the process compensation stage has been reached includes: if the expected process time obtained by adding the executed process time P to the unit monitoring time Δ is less than or equal to the process setting time t, determining that the process compensation stage has not been reached; if the expected process time obtained by adding the executed process time P to the unit monitoring time Δ is greater than the process setting time t, determining that the process compensation stage has been reached.

[0151] In an optional embodiment of the present invention, the controller is configured to: if the process compensation stage has not been reached and the first abnormal discharge time ratio r1 is less than the abnormal discharge time ratio threshold r max , then proceed to the next process with the above unit monitoring time Δ as the target time.

[0152] In an optional embodiment of the present invention, the controller is configured to: if the process compensation stage is not reached and the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max , the process is stopped, and the process environment is adjusted to meet the process conditions, and then the next process with the above unit monitoring time Δ as the target time is carried out.

[0153] In an optional embodiment of the present invention, the controller is configured to: if the process compensation stage is reached, the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max , if the first time length is greater than the compensation process time accuracy S, and the above-mentioned first time length is greater than the above-mentioned unit monitoring time Δ, the process is stopped, and the process environment is adjusted to meet the process conditions, and then the next process with the above-mentioned unit monitoring time Δ as the target time is carried out. The above-mentioned first time length is the above-mentioned process setting time t minus the above-mentioned executed process time P, plus the above-mentioned compensation process time Q.

[0154] In an optional embodiment of the present invention, the controller is configured to: if the process compensation stage is reached, the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max If the first time length is greater than the compensation process time precision S and the first time length is less than or equal to the unit monitoring time Δ, the process is stopped and the process environment is adjusted to meet the process conditions and then the process with the first time length as the target time is carried out; wherein the compensation process time precision S is less than the unit monitoring time Δ.

[0155] In an optional embodiment of the present invention, the controller is configured to determine the target time as the first duration and execute the process of the first duration during the process stage with the process setting time t as the initial value; the time increment corresponding to the abnormal discharge information within the target time is increased to the compensation process time, including: adding a second time increment (t-P+Q)*r2 to the compensation process time Q, where r2 is the ratio of the second abnormal discharge time within the target time of the executed first duration.

[0156] In an optional embodiment of the present invention, the controller is configured to, when reaching the process compensation stage, determine the current value of the compensation process time Q to be greater than the compensation process time precision S, and the second abnormal discharge time ratio r2 to be greater than the abnormal discharge time ratio threshold r max , then update the above-mentioned process setting time t to the current value of the above-mentioned compensation process time Q, update the above-mentioned executed process time P to 0, and then update the above-mentioned compensation process time Q to 0, perform the above-mentioned adjustment operation, and after the process conditions are met, perform the next process with the above-mentioned first time length as the target time.

[0157] In an optional embodiment of the present invention, the controller is configured to, when reaching the process compensation stage, determine if the current value of the compensation process time Q is greater than the compensation process time precision S, and the second abnormal discharge time ratio r2 is less than or equal to the abnormal discharge time ratio threshold r max , then update the above process setting time t to the current value of the compensation process time Q, update the above executed process time P to 0, and then update the above compensation process time Q to 0, and proceed to the next process with the above first time length as the target time.

[0158] In an optional embodiment of the present invention, the controller is configured to: if the process compensation stage is reached and the first abnormal discharge time ratio r1 is less than the abnormal discharge time ratio threshold r max , then proceed to the next process with the second duration as the target time, where the second duration is the process setting time t minus the executed process time P.

[0159] In an optional embodiment of the present invention, the controller is configured to, in the process stage according to the process setting time t, determine that the target time is the second duration and execute the process of the second duration; the time increment corresponding to the abnormal discharge information within the target time is increased to the compensation process time, including: adding a third time interval increment (tP)*r3 to the compensation process time Q, where r3 is the ratio of the third abnormal discharge time executed within the target time with the second duration.

[0160] In an optional embodiment of the present invention, the controller is used to update the process setting time t to the compensation process time Q, update the executed process time P to 0, and then update the compensation process time Q to 0 when the process compensation stage is reached, if the current value of the compensation process time Q is greater than the compensation process time accuracy S; if the unit monitoring time Δ is less than or equal to the updated process setting time t, proceed to the next process with the unit monitoring time Δ as the target time.

[0161] In an optional embodiment of the present invention, the controller is configured to perform a process with the updated process setting time t as the target time if the unit monitoring time Δ is less than or equal to the updated process setting time t; the process of determining the target time and executing the process with the target time in the process stage according to the process setting time t comprises: determining the target time as the updated process setting time t and executing the process with the updated process setting time t in the process stage according to the process setting time t; the time increment corresponding to the abnormal discharge information within the target time is increased to the compensation process time, comprising: adding a fourth time increment t*r4 to the updated compensation process time Q, where r4 is the fourth abnormal discharge time ratio with the updated process setting time t as the target time.

[0162] In an optional embodiment of the present invention, the controller is configured to, when the process compensation stage is reached, if the fourth abnormal discharge time ratio r4 is less than or equal to the abnormal discharge time ratio threshold r max , and the current value of the above-mentioned compensation process time Q is greater than the above-mentioned compensation process time accuracy S, then the above-mentioned process setting time t is updated to the current value of the above-mentioned compensation process time Q again, the above-mentioned executed process time P is updated to 0 again, and then the above-mentioned compensation process time Q is updated to 0 again, and the next process with the above-mentioned updated process setting time t as the target time is carried out.

[0163] In an optional embodiment of the present invention, the controller is configured to terminate the process if the process compensation stage is reached and the compensation process time Q is less than or equal to the compensation process time accuracy S.

[0164] As for the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0165] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0166] Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, apparatus, or computer program products. Thus, embodiments of the present invention may take the form of a fully hardware embodiment, a fully software embodiment, or an embodiment combining software and hardware. Furthermore, embodiments of the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to magnetic disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0167] The embodiments of the present invention are described with reference to the flowcharts and / or block diagrams of the methods, terminal devices (systems), and computer program products according to the embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of the processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing terminal device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 a process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0168] These computer program instructions may also be stored in a computer readable memory that can direct a computer or other programmable data processing terminal device to operate in a specific manner, so that the instructions stored in the computer readable memory produce a manufactured product including an instruction device, which implements the process Figure 1 a process or multiple processes and / or boxes Figure 1 The function specified in one or more boxes.

[0169] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal device so that a series of operating steps are executed on the computer or other programmable terminal device to produce a computer-implemented process, thereby providing instructions for executing on the computer or other programmable terminal device to implement the process. Figure 1 a process or multiple processes and / or boxes Figure 1 The steps for the function specified in one or more boxes.

[0170] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they become aware of the basic creative concepts. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present invention.

[0171] Finally, it should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or terminal device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article, or terminal device that includes the element.

[0172] The above is a detailed introduction to the coating control method and semiconductor process equipment of a semiconductor process equipment provided by the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea; at the same time, for general technical personnel in this field, based on the ideas of the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A method for controlling film deposition of semiconductor process equipment, characterized in that: The semiconductor process equipment performs a plasma-based coating process on a wafer, the coating process includes a process stage and a process compensation stage, and the method includes: In the process stage according to the process setting time t, determining the target time and executing the process of the target time; Acquiring abnormal discharge information within the target time; Adding a time increment corresponding to the abnormal discharge information within the target time to the compensation process time Q; Comparing the expected process time obtained by adding the executed process time P to the target time with the process setting time t to determine whether the process compensation stage has been reached; and determining whether the abnormal discharge information meets the preset requirements; According to whether the process compensation stage is reached and / or whether the abnormal discharge information meets the preset requirements, it is determined whether to continue the process stage and execute the process of the next target time, or to update the process setting time t according to the updated compensation process time Q, to proceed to the compensation process stage, and execute the process of the next target time, or to end the process; The obtaining of abnormal discharge information within the target time includes: Obtain an abnormal discharge time ratio within the target time; the abnormal discharge time ratio is r'=nL / t', where n is the number of abnormal discharges detected within the target time t', and L is the unit time of a single abnormal discharge.

2. The method according to claim 1, characterized in that In the process stage of performing the process according to the process setting time t, determining the target time and executing the process of the target time includes: In the process stage with the process setting time t as the initial value, if the executed process time P plus the unit monitoring time Δ is less than or equal to the process setting time t, then the target time is determined to be the unit monitoring time Δ, and the process for the unit monitoring time Δ is executed; The step of increasing the compensation process time Q by a time increment corresponding to the abnormal discharge information within the target time includes: Adding a first time increment Δ*r1 to the compensation process time Q; wherein r1 is a first abnormal discharge time ratio within the target time of the executed unit monitoring time; The step of comparing the expected process time obtained by adding the executed process time P to the target time with the process setting time t to determine whether the process compensation stage has been reached includes: If the expected process time obtained by adding the executed process time P to the unit monitoring time Δ is less than or equal to the process setting time t, it is determined that the process compensation stage has not been reached; If the expected process time obtained by adding the executed process time P to the unit monitoring time Δ is greater than the process setting time t, it is determined that the process compensation stage has been reached.

3. The method according to claim 2, characterized in that The step of determining, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets a preset requirement, whether to continue the process stage and execute a process for the next target time, or to update the process setting time t according to the updated compensation process time Q, to proceed to the process compensation stage, and to execute a process for the next target time, or to end the process, includes: If the process compensation stage has not been reached, and the first abnormal discharge time ratio r1 is less than the abnormal discharge time ratio threshold r max , then proceed to the next process with the unit monitoring time Δ as the target time.

4. The method according to claim 2, characterized in that The step of determining, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets a preset requirement, whether to continue the process stage and execute a process for the next target time, or to update the process setting time t according to the updated compensation process time Q, to proceed to the process compensation stage, and to execute a process for the next target time, or to end the process, includes: If the process compensation stage has not been reached, and the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max , the process is stopped, and after the process environment is adjusted to meet the process conditions, the next process with the unit monitoring time Δ as the target time is carried out.

5. The method according to claim 2, characterized in that The method further comprises: determining, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets a preset requirement, whether to continue the process stage and execute a process for the next target time, or to update the process setting time t according to the updated compensation process time Q, to compensate the process stage, and execute a process for the next target time, or to end the process. If the process compensation stage is reached, the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max , if the first time length is greater than the compensation process time accuracy S, and the first time length is greater than the unit monitoring time Δ, the process is stopped, and the process environment is adjusted to meet the process conditions, and then the next process with the unit monitoring time Δ as the target time is carried out. The first time length is the process setting time t minus the executed process time P, plus the updated compensation process time Q.

6. The method according to claim 5, characterized in that The method further comprises: determining, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets a preset requirement, whether to continue the process stage and execute a process for the next target time, or to update the process setting time t according to the updated compensation process time Q, to compensate the process stage, and execute a process for the next target time, or to end the process. If the process compensation stage is reached, the first abnormal discharge time ratio r1 is greater than or equal to the abnormal discharge time ratio threshold r max , if the first time length is greater than the compensation process time accuracy S and the first time length is less than or equal to the unit monitoring time Δ, the process is stopped, and the process environment is adjusted to meet the process conditions, and then the process with the first time length as the target time is carried out; wherein, the compensation process time accuracy S is less than the unit monitoring time Δ.

7. The method according to claim 6, characterized in that In the process stage of performing the process according to the process setting time t, determining the target time and executing the process of the target time includes: In the process stage with the process setting time t as the initial value, determining the target time to be the first duration and performing the process of the first duration; The step of increasing the compensation process time Q by a time increment corresponding to the abnormal discharge information within the target time includes: A second time increment (t-P+Q)*r2 is added to the compensation process time Q, where r2 is a second abnormal discharge time ratio within the executed first target time.

8. The method according to claim 7, characterized in that The step of determining, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets a preset requirement, whether to continue the process stage and execute a process for the next target time, or to update the process setting time t according to the updated compensation process time Q, to compensate the process stage, and execute a process for the next target time, or to end the process, includes: When the process compensation stage is reached, if the current value of the compensation process time Q is greater than the compensation process time precision S, and the second abnormal discharge time ratio r2 is greater than the abnormal discharge time ratio threshold r max , then the process setting time t is updated to the current value of the compensation process time Q, the executed process time P is updated to 0, and then the compensation process time Q is updated to 0, and after the process environment is adjusted to meet the process conditions, the next process with the first time length as the target time is carried out.

9. The method according to claim 7, characterized in that The step of determining, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets a preset requirement, whether to continue the process stage and execute a process for the next target time, or to update the process setting time t according to the updated compensation process time Q, to compensate the process stage, and execute a process for the next target time, or to end the process, includes: When the process compensation stage is reached, if the current value of the compensation process time Q is greater than the compensation process time precision S, and the second abnormal discharge time ratio r2 is less than or equal to the abnormal discharge time ratio threshold r max , then the process setting time t is updated to the current value of the compensation process time Q, the executed process time P is updated to 0, and then the compensation process time Q is updated to 0, and the next process with the first duration as the target time is carried out.

10. The method according to claim 2, characterized in that The step of determining, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets a preset requirement, whether to continue the process stage and execute a process for the next target time, or to update the process setting time t according to the updated compensation process time Q, to compensate the process stage, and execute a process for the next target time, or to end the process, includes: If the process compensation stage is reached and the first abnormal discharge time ratio r1 is less than the abnormal discharge time ratio threshold r max , then proceed to the next process with a second duration as the target time, where the second duration is the process setting time t minus the executed process time P.

11. The method according to claim 10, characterized in that In the process stage of performing the process according to the process setting time t, determining the target time and executing the process of the target time includes: In the process stage according to the process setting time t, determining the target time as the second duration and performing the process of the second duration; The step of increasing the compensation process time Q by a time increment corresponding to the abnormal discharge information within the target time includes: A third time interval increment (tP)*r3 is added to the compensation process time Q, where r3 is a third abnormal discharge time ratio executed with the second time length as the target time.

12. The method according to claim 11, characterized in that The step of determining, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets a preset requirement, whether to continue the process stage and execute a process for the next target time, or to update the process setting time t according to the updated compensation process time Q, to compensate the process stage, and execute a process for the next target time, or to end the process, includes: When the process compensation stage is reached, if the current value of the compensated process time Q is greater than the compensated process time precision S, the process setting time t is updated to the compensated process time Q, the executed process time P is updated to 0, and then the compensated process time Q is updated to 0; If the unit monitoring time Δ is less than or equal to the updated process setting time t, the next process with the unit monitoring time Δ as the target time is performed.

13. The method according to claim 12, characterized in that The step of determining, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets a preset requirement, whether to continue the process stage and execute a process for the next target time, or to update the process setting time t according to the updated compensation process time Q, to compensate the process stage, and execute a process for the next target time, or to end the process, includes: If the unit monitoring time Δ is less than or equal to the updated process setting time t, then performing a process with the updated process setting time t as the target time; In the process stage of performing the process according to the process setting time t, determining the target time and executing the process of the target time includes: In the process stage according to the process setting time t, determining the target time as the updated process setting time t, and performing the process with the updated process setting time t; The step of increasing the compensation process time Q by a time increment corresponding to the abnormal discharge information within the target time includes: A fourth time increment t*r4 is added to the updated compensation process time Q, where r4 is a fourth abnormal discharge time ratio within the target time using the updated process setting time t as the target time.

14. The method according to claim 13, characterized in that The step of determining, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets a preset requirement, whether to continue the process stage and execute a process for the next target time, or to update the process setting time t according to the updated compensation process time Q, to compensate the process stage, and execute a process for the next target time, or to end the process, includes: When the process compensation stage is reached, if the fourth abnormal discharge time ratio r4 is less than or equal to the abnormal discharge time ratio threshold r max , and the current value of the compensation process time Q is greater than the compensation process time accuracy S, then the process setting time t is updated to the current value of the compensation process time Q again, the executed process time P is updated to 0 again, and then the compensation process time Q is updated to 0 again, and the next process with the updated process setting time t as the target time is carried out.

15. The method according to claim 1, wherein The step of determining, based on whether the process compensation stage is reached and / or whether the abnormal discharge information meets a preset requirement, whether to continue the process stage and execute a process for the next target time, or to update the process setting time t according to the updated compensation process time Q, to proceed to the process compensation stage, and to execute a process for the next target time, or to end the process, includes: If the process compensation stage is reached and the compensation process time Q is less than or equal to the time accuracy S of the compensation process, the process is terminated.

16. A semiconductor process equipment, characterized in that: The semiconductor process equipment performs a plasma-based coating process on a wafer, wherein the coating process includes a process stage and a process compensation stage. The semiconductor process equipment further includes: The controller is configured to, during the process phase according to the process setting time t, determine a target time and execute a process for the target time; obtain abnormal discharge information within the target time; increase a time increment corresponding to the abnormal discharge information within the target time to the compensation process time Q; compare an expected process time obtained by adding the executed process time P to the target time with the process setting time t, and determine whether the abnormal discharge information meets a preset requirement; and determine, based on whether the abnormal discharge information meets the preset requirement, whether to continue the process phase and execute a process for the next target time, or to update the process setting time t according to the updated compensation process time Q, execute the compensation process phase, execute a process for the next target time, or terminate the process; obtaining the abnormal discharge information within the target time includes obtaining an abnormal discharge time ratio within the target time; the abnormal discharge time ratio is r'=nL / t', where n is the number of abnormal discharges detected within the target time t', and L is the unit time of a single abnormal discharge.

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