A decoupling method, storage medium and device for boost circuit

Abstract

The embodiment of the present invention discloses a decoupling method, storage medium and device for a boost circuit, the method comprising: establishing a first boost circuit simulation model, one end of an inductor is connected to a first end of a switch configuration module, and the other end of the inductor is a preset current input end; one end of a capacitor is connected to a second end of the switch configuration module, and the other end of the capacitor is connected to a third end of the switch configuration module, and one end of the capacitor and the other end of the capacitor are preset voltage input ends; decoupling the first boost circuit simulation model into a second boost circuit simulation model and a third boost circuit simulation model, one end of the inductor is connected to one end of a voltage source; one end of the capacitor is connected to one end of a current source, and the other end of the capacitor is connected to the other end of the current source; determining the voltage value of the voltage source according to the voltage value of the preset voltage, and determining the current value of the current source according to the current value of the preset current. There is no numerical oscillation problem when simulating the two decoupled boost circuits, and the parallel calculation is efficient.

Description

Technical Field

[0001] The present invention relates to the field of circuit technology, and in particular to a decoupling method, storage medium and device for a boost circuit. Background Art

[0002] The boost circuit is a switching DC boost circuit, which is characterized by converting the input voltage into a higher voltage for output. The boost circuit is a very common circuit in photovoltaic power generation units. Since the circuit contains components such as inductors and capacitors, the input circuit part, i.e. the inductor part, and the output circuit part, i.e. the capacitor part, are coupled together in the boost circuit. Therefore, the boost circuit is prone to numerical oscillation during simulation.

[0003] At present, the following problems exist when conducting circuit simulation at home and abroad: First, when the boost circuit is simulated using a real-time digital simulator (RTDS), the traditional digital oscillation suppression algorithm cannot be applied because the interpolation algorithm cannot be used, resulting in numerical oscillations in the boost circuit during simulation; Second, in real-time simulation, since the input circuit part and the output circuit part connected to the chopping current in the boost circuit are tightly coupled together, the power grid connected to the boost circuit cannot be calculated in parallel, resulting in low calculation efficiency when the boost circuit is simulated. Summary of the invention

[0004] Based on this, it is necessary to propose a decoupling method, storage medium and device for a boost circuit to address the above problems. By decoupling one boost circuit into two boost circuits, the input circuit part and the output circuit part are decoupled, so that the boost circuit will not produce numerical oscillation problems during simulation. Moreover, since the two boost circuits are decoupled, they can be calculated independently and in parallel, with high calculation efficiency.

[0005] To achieve the above object, the present invention provides a decoupling method for a boost circuit in a first aspect, the method comprising:

[0006] A first boost circuit simulation model is established, wherein the first boost circuit simulation model includes: an inductor, a switch configuration module, and a capacitor, wherein one end of the inductor is connected to the first end of the switch configuration module, and the other end of the inductor is an input end for a preset current; one end of the capacitor is connected to the second end of the switch configuration module, and the other end of the capacitor is connected to the third end of the switch configuration module, and one end of the capacitor and the other end of the capacitor are input ends for a preset voltage;

[0007] Decoupling the first boost circuit simulation model into a second boost circuit simulation model and a third boost circuit simulation model, wherein the second boost circuit simulation model includes: the inductor and the voltage source, one end of the inductor is connected to one end of the voltage source; the third boost circuit simulation model includes: the capacitor and the current source, one end of the capacitor is connected to one end of the current source, and the other end of the capacitor is connected to the other end of the current source;

[0008] The voltage value of the voltage source is determined according to the voltage value of the preset voltage, and the current value of the current source is determined according to the current value of the preset current.

[0009] Optionally, the switch configuration module includes: an insulated gate bipolar transistor and a diode;

[0010] One end of the inductor is connected to one end of the insulated gate bipolar transistor, one end of the insulated gate bipolar transistor is connected to the anode end of the diode, the cathode end of the diode is connected to one end of the capacitor, and the other end of the capacitor is connected to the other end of the insulated gate bipolar transistor.

[0011] Optionally, determining the voltage value of the voltage source according to the voltage value of the preset voltage, and determining the current value of the current source according to the current value of the preset current, includes:

[0012] Determine the target coefficient;

[0013] The voltage value of the voltage source is determined according to the voltage value of the preset voltage and the target coefficient, and the current value of the current source is determined according to the current value of the preset current and the target coefficient.

[0014] Optionally, determining the target coefficient includes:

[0015] The state of the diode and a parameter value corresponding to the state of the diode are set, and the target coefficient is determined based on the parameter value.

[0016] Optionally, setting the state of the diode and a parameter value corresponding to the state of the diode, and determining the target coefficient based on the parameter value includes:

[0017] When the diode is set to be in a conducting state, the parameter value corresponding to the diode being in a conducting state is set to 1, and the parameter value 1 is used as the target coefficient;

[0018] When the diode is set to be in a cut-off state, the parameter value corresponding to the diode being in the cut-off state is set to 0, and the parameter value 0 is used as the target coefficient.

[0019] Optionally, determining the current value of the current source according to the current value of the preset current and the target coefficient includes:

[0020] Using Formula I d =S d I l , determine the current value I of the current source d ;

[0021] Among them, S d The target coefficient is I l is the current value of the preset current.

[0022] Optionally, determining the voltage value of the voltage source according to the voltage value of the preset voltage and a target coefficient includes:

[0023] Using formula V ln =S d V cn , determine the voltage value V of the voltage source ln ;

[0024] Among them, S d is the target coefficient, V cn is the voltage value of the preset voltage.

[0025] Optionally, determining the voltage value of the voltage source according to the voltage value of the preset voltage and a target coefficient includes:

[0026] Using formula V ln =S d V cn +I l R sw , determine the voltage value V of the voltage source ln ;

[0027] Among them, S d is the target coefficient, V cn is the voltage value of the preset voltage, R sw is the resistance of the diode, I l is the current value of the preset current.

[0028] To achieve the above object, the present invention provides a computer-readable storage medium in a second aspect, storing a computer program, wherein when the computer program is executed by a processor, the processor performs the following steps:

[0029] A first boost circuit simulation model is established, wherein the first boost circuit simulation model includes: an inductor, a switch configuration module, and a capacitor, wherein one end of the inductor is connected to the first end of the switch configuration module, and the other end of the inductor is an input end for a preset current; one end of the capacitor is connected to the second end of the switch configuration module, and the other end of the capacitor is connected to the third end of the switch configuration module, and one end of the capacitor and the other end of the capacitor are input ends for a preset voltage;

[0030] Decoupling the first boost circuit simulation model into a second boost circuit simulation model and a third boost circuit simulation model, wherein the second boost circuit simulation model includes: the inductor and the voltage source, one end of the inductor is connected to one end of the voltage source; the third boost circuit simulation model includes: the capacitor and the current source, one end of the capacitor is connected to one end of the current source, and the other end of the capacitor is connected to the other end of the current source;

[0031] The voltage value of the voltage source is determined according to the voltage value of the preset voltage, and the current value of the current source is determined according to the current value of the preset current.

[0032] To achieve the above object, the present invention provides a computer device in a third aspect, including a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the processor performs the following steps:

[0033] A first boost circuit simulation model is established, wherein the first boost circuit simulation model includes: an inductor, a switch configuration module, and a capacitor, wherein one end of the inductor is connected to the first end of the switch configuration module, and the other end of the inductor is an input end for a preset current; one end of the capacitor is connected to the second end of the switch configuration module, and the other end of the capacitor is connected to the third end of the switch configuration module, and one end of the capacitor and the other end of the capacitor are input ends for a preset voltage;

[0034] Decoupling the first boost circuit simulation model into a second boost circuit simulation model and a third boost circuit simulation model, wherein the second boost circuit simulation model includes: the inductor and the voltage source, one end of the inductor is connected to one end of the voltage source; the third boost circuit simulation model includes: the capacitor and the current source, one end of the capacitor is connected to one end of the current source, and the other end of the capacitor is connected to the other end of the current source;

[0035] The voltage value of the voltage source is determined according to the voltage value of the preset voltage, and the current value of the current source is determined according to the current value of the preset current.

[0036] The embodiment of the present invention has the following beneficial effects: a first boost circuit simulation model is established, the first boost circuit simulation model includes: an inductor, a switch configuration module, and a capacitor, one end of the inductor is connected to the first end of the switch configuration module, and the other end of the inductor is the input end of a preset current; one end of the capacitor is connected to the second end of the switch configuration module, and the other end of the capacitor is connected to the third end of the switch configuration module, and one end of the capacitor and the other end of the capacitor are the input ends of a preset voltage; the first boost circuit simulation model is decoupled into a second boost circuit simulation model and a third boost circuit simulation model, the second simulation boost circuit model includes: an inductor and a voltage source, one end of the inductor is connected to one end of the voltage source; the third boost circuit simulation model includes: a capacitor and a current source, one end of the capacitor is connected to one end of the current source, and the other end of the capacitor is connected to the other end of the current source; the voltage value of the voltage source is determined according to the voltage value of the preset voltage, and the current value of the current source is determined according to the current value of the preset current. The above method decouples a boost circuit into two boost circuits, so that the input circuit part and the output circuit part are decoupled, that is, the boost circuit will not produce numerical oscillation problems during simulation, and because the two boost circuits are decoupled, they can be calculated independently and in parallel, with high calculation efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0038] in:

[0039] Figure 1 A schematic flow chart of a decoupling method for a boost circuit in an embodiment of the present application;

[0040] Figure 2 This is a structural schematic diagram of a first boost circuit simulation model in an embodiment of the present application;

[0041] Figure 3 It is a structural schematic diagram of the second boost circuit simulation model and the third boost circuit simulation model in the embodiment of the present application;

[0042] Figure 4 Another structural schematic diagram of the first boost circuit simulation model in the embodiment of the present application;

[0043] Figure 5 FIG. 4 is a diagram showing the internal structure of a computer device in one embodiment. DETAILED DESCRIPTION

[0044] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0045] See also Figure 1 , is a flow chart of a decoupling method of a boost circuit in an embodiment of the present application, comprising:

[0046] Step 110: Establish a first boost circuit simulation model.

[0047] It should be noted that the process of establishing the first boost circuit simulation model can specifically be that a computer program is executed by a processor to establish the first boost circuit simulation model, or that an operator establishes the first boost circuit simulation model with the help of a simulation software tool, and there is no limitation here.

[0048] In a feasible implementation, the first boost circuit simulation model is established, see Figure 2 , is a structural diagram of the first boost circuit simulation model in the embodiment of the present application, the first boost circuit simulation model 210 includes: an inductor 211, a switch configuration module 212, and a capacitor 213, one end of the inductor 211 is connected to the first end of the switch configuration module 212, and the other end of the inductor 211 is the input end of the preset current; one end of the capacitor 213 is connected to the second end of the switch configuration module 212, and the other end of the capacitor 213 is connected to the third end of the switch configuration module 212, and one end of the capacitor 213 and the other end of the capacitor 213 are the input ends of the preset voltage.

[0049] It should be noted that the current value of the preset current and the voltage value of the preset voltage can be set by the operator according to actual needs.

[0050] It should be further explained that one end of the capacitor 213 is a positive input end of a preset voltage and the other end of the capacitor 213 is a negative input end of a preset voltage.

[0051] Step 120: Decouple the first boost circuit simulation model into a second boost circuit simulation model and a third boost circuit simulation model.

[0052] It should be noted that the decoupling process of decoupling the first boost circuit simulation model into the second boost circuit simulation model and the third boost circuit simulation model can be, specifically, a computer program executed by a processor to decouple the first boost circuit simulation model into the second boost circuit simulation model and the third boost circuit simulation model, or it can be based on an operator using a simulation software tool to decouple the first boost circuit simulation model into the second boost circuit simulation model and the third boost circuit simulation model, and there is no limitation here.

[0053] It should be further explained that the second boost circuit simulation model is the input circuit part of the first boost circuit simulation model, and the third boost circuit simulation model is the output circuit part of the first boost circuit simulation model.

[0054] In a feasible implementation, the second boost circuit simulation model and the third boost circuit simulation model obtained by decoupling the first boost circuit simulation model are shown in FIG. Figure 3 , is a structural schematic diagram of the second boost circuit simulation model and the third boost circuit simulation model in the embodiment of the present application, the second simulation boost circuit model 310 includes: an inductor 211, a voltage source 311, and one end of the inductor 211 is connected to one end of the voltage source 311; the third boost circuit simulation model 320 includes: a capacitor 213, a current source 321, one end of the capacitor 213 is connected to one end of the current source 321, and the other end of the capacitor 213 is connected to the other end of the current source 321.

[0055] It should be noted that the other end of the inductor 211 in the second boost circuit simulation model 310 obtained after decoupling is still the input end for the preset current; one end of the capacitor 213 and the other end of the capacitor 213 in the third boost circuit simulation model 320 obtained after decoupling are still the input ends for the preset voltage, and one end of the capacitor 213 is the positive input end for the preset voltage and the other end of the capacitor 213 is the negative input end for the preset voltage. It can be understood that the input ends of the preset current and the preset voltage are not changed in order to keep the input directions of the preset current and the preset voltage consistent before and after decoupling.

[0056] Step 130: Determine a voltage value of the voltage source according to a voltage value of a preset voltage, and determine a current value of the current source according to a current value of a preset current.

[0057] It can be understood that the third boost circuit simulation model determines the voltage value of the voltage source according to the voltage value of the preset voltage in order to make the effect of the voltage value of the voltage source after decoupling consistent with the effect of the voltage value of the preset voltage before decoupling; the second boost circuit simulation model determines the current value of the current source according to the current value of the preset current in order to make the effect of the current value of the current source after decoupling consistent with the effect of the current value of the preset current before decoupling.

[0058] In an embodiment of the present application, the above method decouples the first boost circuit simulation model into a second boost circuit simulation model and a third boost circuit simulation model, that is, decouples one boost circuit into two boost circuits, so that the input circuit part and the output circuit part are decoupled, so that the boost circuit will not produce numerical oscillation problems during simulation, and because the two boost circuits are decoupled, they can be calculated independently and in parallel, with high calculation efficiency.

[0059] See also Figure 4 , is another structural diagram of the first boost circuit simulation model in the embodiment of the present application, the switch configuration module 212 includes: an insulated gate bipolar transistor 410 and a diode 420.

[0060] Among them, one end of the inductor 211 is connected to one end of the insulated gate bipolar transistor 410, one end of the insulated gate bipolar transistor 410 is connected to the anode end of the diode 420, the cathode end of the diode 420 is connected to one end of the capacitor 213, and the other end of the capacitor 213 is connected to the other end of the insulated gate bipolar transistor 410.

[0061] In the embodiment of the present application, through the connection relationship between the insulated gate bipolar transistor and the diode in the switch configuration module, the operator can determine the state of the insulated gate bipolar transistor according to the state of the diode, that is, according to whether the diode is in the on state or the off state, it can be determined whether the insulated gate bipolar transistor is in the on state or the off state.

[0062] In a feasible implementation, in step 130, the voltage value of the voltage source is determined according to the voltage value of the preset voltage, and the current value of the current source is determined according to the current value of the preset current, including: determining the target coefficient; determining the voltage value of the voltage source according to the voltage value of the preset voltage and the target coefficient, and determining the current value of the current source according to the current value of the preset current and the target coefficient.

[0063] It should be noted that the target coefficient is the coefficient value in the formula. It can be understood that the voltage value of the voltage source can be the product of the target coefficient and the voltage value of the preset voltage, and the current value of the current source can be the product of the target coefficient and the voltage value of the preset voltage.

[0064] In the embodiment of the present application, the target coefficient is determined in order to further determine the voltage value of the voltage source and the current value of the current source.

[0065] In a feasible implementation, determining the target coefficient includes: setting a state of a diode and a parameter value corresponding to the state of the diode, and determining the target coefficient based on the parameter value.

[0066] It should be noted that the diode has two states: an on state and an off state. The on state and the off state of the diode correspond to different parameter values. In the present application, the parameter value corresponding to the on state of the diode is 1, and the parameter value corresponding to the off state of the diode is 0.

[0067] In the embodiment of the present application, by setting the state of the diode and the parameter value corresponding to the state of the diode, the state of the diode can be set by the parameter value.

[0068] In a feasible implementation method, the state of the diode and the parameter value corresponding to the state of the diode are set, and the target coefficient is determined based on the parameter value, including: when the diode is set to be in the on state, the parameter value corresponding to the diode being in the on state is set to 1, and the parameter value 1 is used as the target coefficient; when the diode is set to be in the off state, the parameter value corresponding to the diode being in the off state is set to 0, and the parameter value 0 is used as the target coefficient.

[0069] It should be noted that when the diode is set in the on state, the insulated gate bipolar transistor is in a short-circuit state, that is, the insulated gate bipolar transistor is in the off state; when the diode is set in the off state, the insulated gate bipolar transistor is in an open circuit state, that is, the insulated gate bipolar transistor is in the on state.

[0070] In an embodiment of the present application, by using the parameter value corresponding to the state of the diode as the target coefficient, the current value of the current source and the voltage value of the voltage source are associated with the state of the diode, so that the preset current and preset voltage input directions before and after decoupling remain consistent, and the effect of the voltage value of the voltage source after decoupling of the third boost circuit simulation model is consistent with the effect of the voltage value of the preset voltage before decoupling, and the effect of the current value of the current source after decoupling of the second boost circuit simulation model is consistent with the effect of the current value of the preset current before decoupling.

[0071] In a feasible implementation, the current value of the current source is determined according to the current value of the preset current and the target coefficient, including: using formula I d =S d I l , determine the current value I of the current source d ; Among them, S d is the target coefficient, I l is the current value of the preset current.

[0072] In the embodiment of the present application, by using formula I d =S d I lThe obtained current value of the current source can make the effect of the current value of the current source after decoupling of the second boost circuit simulation model consistent with the effect of the current value of the preset current before decoupling.

[0073] In a feasible implementation, the voltage value of the voltage source is determined according to the voltage value of the preset voltage and the target coefficient, including: using the formula V ln =S d V cn , determine the voltage value V of the voltage source ln ; Among them, S d is the target coefficient, V cn is the voltage value of the preset voltage.

[0074] It should be noted that the voltage value of the voltage source is determined here without taking into account the voltage value occupied by the diode resistance.

[0075] In the embodiment of the present application, by using the formula V ln =S d V cn The obtained voltage value of the voltage source can make the effect of the voltage value of the voltage source after decoupling of the third boost circuit simulation model consistent with the effect of the voltage value of the preset voltage before decoupling.

[0076] In a feasible implementation, the voltage value of the voltage source is determined according to the voltage value of the preset voltage and the target coefficient, including: using the formula V ln =S d V cn +I l R sw , determine the voltage value V of the voltage source ln ; Among them, S d is the target coefficient, V cn is the voltage value of the preset voltage, R sw is the resistance of the diode, I l is the current value of the preset current.

[0077] It should be noted that, for determining the voltage value of the voltage source here, the voltage value occupied by the resistance of the diode can also be considered, that is, I l R sw is the voltage value of the diode resistance.

[0078] In the embodiment of the present application, by using the formula V ln =S d V cn +I l R swThe obtained voltage value of the voltage source can make the effect of the voltage value of the voltage source after decoupling of the third boost circuit simulation model consistent with the effect of the voltage value of the preset voltage before decoupling.

[0079] In an embodiment of the present application, a computer-readable storage medium is provided, which stores a computer program. When the computer program is executed by a processor, the processor executes the steps of a decoupling method for a boost circuit in any one of the above embodiments.

[0080] In one embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the processor executes the steps of a decoupling method for a boost circuit in any one of the above embodiments.

[0081] Figure 5 FIG. 1 shows an internal structure diagram of a computer device in an embodiment. The computer device may be a terminal, a server, or a gateway. Figure 5 As shown, the computer device includes a processor, a memory and a network interface connected through a system bus.

[0082] The memory includes a non-volatile storage medium and an internal memory. The non-volatile storage medium of the computer device stores an operating system and may also store a computer program. When the computer program is executed by the processor, the processor can implement each step in the above method embodiment. The internal memory may also store a computer program. When the computer program is executed by the processor, the processor can implement each step in the above method embodiment. Those skilled in the art can understand that Figure 5 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components.

[0083] A person skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be implemented by instructing related hardware through a computer program. The program can be stored in a non-volatile computer-readable storage medium. When the program is executed, it can include the processes of the embodiments of the above-mentioned methods.

[0084] Among them, any reference to memory, storage, database or other media used in the embodiments provided in the present application may include non-volatile and / or volatile memory. Non-volatile memory may include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM) or flash memory. Volatile memory may include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM is available in various forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM).

[0085] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0086] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A decoupling method for a boost circuit, characterized in that: The method comprises: A first boost circuit simulation model is established, wherein the first boost circuit simulation model includes: an inductor, a switch configuration module, and a capacitor, wherein one end of the inductor is connected to the first end of the switch configuration module, and the other end of the inductor is an input end for a preset current; one end of the capacitor is connected to the second end of the switch configuration module, and the other end of the capacitor is connected to the third end of the switch configuration module, and one end of the capacitor and the other end of the capacitor are input ends for a preset voltage; Decoupling the first boost circuit simulation model into a second boost circuit simulation model and a third boost circuit simulation model, wherein the second boost circuit simulation model includes: the inductor and the voltage source, one end of the inductor is connected to one end of the voltage source; the third boost circuit simulation model includes: the capacitor and the current source, one end of the capacitor is connected to one end of the current source, and the other end of the capacitor is connected to the other end of the current source; Determining a voltage value of the voltage source according to a voltage value of the preset voltage, and determining a current value of the current source according to a current value of the preset current; Wherein, the switch configuration module includes: an insulated gate bipolar transistor and a diode; One end of the inductor is connected to one end of the insulated gate bipolar transistor, one end of the insulated gate bipolar transistor is connected to the anode end of the diode, the cathode end of the diode is connected to one end of the capacitor, and the other end of the capacitor is connected to the other end of the insulated gate bipolar transistor.

2. The method according to claim 1, characterized in that The step of determining the voltage value of the voltage source according to the voltage value of the preset voltage, and determining the current value of the current source according to the current value of the preset current, comprises: Determine the target coefficient; The voltage value of the voltage source is determined according to the voltage value of the preset voltage and the target coefficient, and the current value of the current source is determined according to the current value of the preset current and the target coefficient.

3. The method according to claim 2, characterized in that The determining of the target coefficient comprises: The state of the diode and a parameter value corresponding to the state of the diode are set, and the target coefficient is determined based on the parameter value.

4. The method according to claim 3, characterized in that: The step of setting the state of the diode and a parameter value corresponding to the state of the diode, and determining the target coefficient based on the parameter value, includes: When the diode is set to be in a conducting state, the parameter value corresponding to the diode being in a conducting state is set to 1, and the parameter value 1 is used as the target coefficient; When the diode is set to be in a cut-off state, the parameter value corresponding to the diode being in the cut-off state is set to 0, and the parameter value 0 is used as the target coefficient.

5. The method according to claim 4, characterized in that The determining the current value of the current source according to the current value of the preset current and the target coefficient includes: Using Formula I d =S d I l , determine the current value I of the current source d ; Among them, S d is the target coefficient, I l is the current value of the preset current.

6. The method according to claim 4, characterized in that The step of determining the voltage value of the voltage source according to the voltage value of the preset voltage and the target coefficient includes: Using formula V ln =S d V cn , determine the voltage value V of the voltage source ln ; Among them, S d is the target coefficient, V cn is the voltage value of the preset voltage.

7. The method according to claim 4, characterized in that The step of determining the voltage value of the voltage source according to the voltage value of the preset voltage and the target coefficient includes: Using formula V ln =S d V cn +I l R sw , determine the voltage value V of the voltage source ln ; Among them, S d is the target coefficient, V cn is the voltage value of the preset voltage, R sw is the resistance of the diode, I l is the current value of the preset current.

8. A computer-readable storage medium storing a computer program, wherein when the computer program is executed by a processor, the processor is caused to perform the steps of the method according to any one of claims 1 to 7.

9. A computer device comprising a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the processor executes the steps of the method according to any one of claims 1 to 7.

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