An asymmetric trench gate SiC IGBT device and a preparation method thereof
By introducing Schottky contacts into asymmetric trench gate SiC IGBT devices, the problem of the inability to reduce on-state voltage drop was solved, thereby improving conductivity and electric field stability and reducing on-state losses.
CN115148800BActive Publication Date: 2026-07-17INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
- Filing Date
- 2022-05-27
- Publication Date
- 2026-07-17
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Figure CN115148800B_ABST
Abstract
The present application relates to an asymmetric trench gate SiC IGBT device, which forms a certain potential barrier by making a Schottky contact above a non-conductive side P well region (i.e. a first well region) and a conductive side P type contact region, so as to prevent holes from directly escaping from the grounded P well region and the P type contact region, and to improve the hole concentration, thereby significantly reducing the forward conduction voltage drop of the device, reducing the on-state loss, significantly enhancing the conduction capacity of the device, and without degradation of the breakdown voltage and the gate oxide field. The present application also relates to a preparation method of the asymmetric trench gate SiC IGBT device, and the preparation process is simple.
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