Vertical light emitting diode structure with high current spreading and high reliability

Abstract

A vertical light emitting diode structure with high current dispersion and high reliability, comprising a conductive substrate with a central region and a side region; a light emitting semiconductor layer disposed on the central region; an ohmic contact metal layer disposed at the center of the light emitting semiconductor layer; an N-type electrode disposed on the side region and connected to the ohmic contact metal layer through an N-type electrode cross-connection structure; accordingly, a working current is dispersed from the center of the light emitting semiconductor layer, having high current dispersion, and solving the problem of local high current heat dissipation caused by the N-type electrode placed on the edge design; the design of the wire-bonding N-type electrode disposed on the side region can avoid the interference of the gold wire of the package caused by the N-type electrode placed in the middle, and the light emitting semiconductor layer is not broken by stress, avoiding the risk of cracks or separation of the light emitting semiconductor layer caused by wire-bonding in subsequent processes, thereby increasing the reliability.

Description

TECHNICAL FIELD

[0001] The present application relates to light emitting diodes, and more particularly to vertical light emitting diode structures with high current spreading and high reliability. BACKGROUND

[0002] Vertical light emitting diodes can emit high efficiency axial light, and are very suitable for applications requiring high operating current and high luminance. The products can be used for high-intensity germicidal (ultraviolet light), vehicle headlamps and tail lamps (blue, yellow, and red light), projector light sources (blue, green, and red), and infrared security detection (infrared). In addition to high luminosity and luminous density, excellent high-power light emitting diode (LED) elements also require good reliability. For example, if a LED fails, it will affect night safety. According to the high standard specifications for vehicle LED, even 1 ppm of trace failure needs to be improved in the automotive industry.

[0003] The wafer size of conventional high-power vertical light emitting diodes is about 1 mm x 1 mm, and the operating current is 1 A or higher. The general structure design has the following characteristics: electrode pads are located above the light emitting semiconductor layer to provide wire bonding, and the electrode pads are usually thick gold wires to facilitate high current passing through; auxiliary lines with fingers are located above the light emitting semiconductor layer, and the more auxiliary lines are provided on the light emitting semiconductor layer, the better the current spreading, but the light shielding area is also increased; the connection material between the P-type electrode and the package needs to use AuSn (gold-tin alloy) for good conductivity and heat dissipation, and the bottom of the connection material requires high flatness and low porosity to reduce current concentration and increase heat dissipation.

[0004] When the electrode pads are formed at the center of the light emitting semiconductor layer, the current spreading is optimal, which not only improves the light emitting efficiency, but also has good heat dissipation, avoiding the problem of local heating caused by current concentration. However, the thick gold wires used for packaging in the wire bonding process will block light and interfere with light uniformity. Currently, the electrode pads are usually placed at the side edges of the light emitting semiconductor layer, but the electrode pads placed at the side edges will cause the light emitting semiconductor layer to concentrate light and heat at the side edges when operating at high current, which cannot achieve the good current spreading effect of the center design.

[0005] At present, the failure types of vertical light-emitting diodes are roughly the following four: (1) Because the electrode pad is placed on the side, the light-emitting semiconductor layer will not diffuse well and the edge will be heated when the operating current is high, resulting in uneven light emission and electrode burning. (2) The wire bonding process is performed on the electrode pad on the surface of the light-emitting semiconductor layer, which may damage the light-emitting semiconductor layer and reduce reliability. (3) When the packaging glue is pulled, the light-emitting semiconductor layer will be indirectly pulled through the gold wire on the electrode pad, causing micro cracks or film peeling, causing the package to fail or become unstable. (4) If the connection between the P electrode and the package is uneven or there are too many pores, local hot spots will be formed under high operating current, further causing material deterioration and causing component burning.

[0006] Therefore, as disclosed in U.S. Patent No. US 8,319,250 B2, a multi-conductive pillar technology is disclosed, which uses an N-electrode as the bottom electrode and extends multiple vertical conductive pillars with insulated sidewalls through the P-type semiconductor layer, the quantum well layer, and into the N-type semiconductor layer, so that the working current is evenly dispersed in the N-type semiconductor layer, while the P-electrode is set on the side for use in the wire bonding of the packaging process. This design can achieve the best dispersion of the working current through multiple conductive pillars, and the wire bonding of the packaging process will not impact the light-emitting semiconductor layer, thereby improving the failure types (1), (2), and (3) of the above-mentioned vertical light-emitting diodes. However, this structure contains a large number of precise conductive pillars, whose diameter is usually 20-30μm, the inner cylindrical wall of which is coated with an extremely thin insulating material, and the central layer of the cylindrical is deposited with a highly conductive metal. This delicate yet fragile structure, with complex manufacturing processes, high costs, narrow process conditions, and difficulty detecting failed products. Worst of all, excessive external stress (such as physical contact with the surface or deformation stress from the packaging process) can cause microcracks in the conductive pillars, forming microchannels that can lead to immediate component failure or reduced long-term reliability. Summary of the Invention

[0007] Therefore, the main purpose of the present invention is to disclose a vertical light emitting diode structure with high current dispersion and high reliability to meet the application requirements of high axiality, high brightness and high reliability.

[0008] The present invention provides a vertical light-emitting diode structure with high current dispersion and reliability. The structure comprises a P-type electrode, a conductive substrate, a light-emitting semiconductor layer, an ohmic contact metal layer, an N-type electrode crossover structure, and an N-type electrode. The P-type electrode is disposed on one side of the conductive substrate, while the other side of the conductive substrate has a central region and a side region adjacent to the central region. The light-emitting semiconductor layer is disposed on the central region of the conductive substrate and comprises a P-type semiconductor layer, a quantum well layer (MQW), and an N-type semiconductor layer. The P-type semiconductor layer is disposed on the conductive substrate, the quantum well layer (MQW) is disposed on the P-type semiconductor layer, and the N-type semiconductor layer is disposed on the quantum well layer. The ohmic contact metal layer is disposed at the center of the N-type semiconductor layer and makes ohmic contact therewith. The N-type electrode bridge structure comprises a bridge insulating layer and a bridge conductive layer. The bridge insulating layer is disposed across the N-type semiconductor layer and the side region of the conductive substrate, and is adjacent to the ohmic contact metal layer. The bridge conductive layer is disposed on the bridge insulating layer, with one end of the bridge conductive layer connected to the ohmic contact metal layer and the other end extending to the side region of the conductive substrate. The N-type electrode is used in a wire bonding process and is disposed on the bridge conductive layer and above the side region.

[0009] Therefore, the advantages of the present invention over the conventional technology are that it adopts a vertical light-emitting diode structural design with high axial light characteristics; the N-type electrode is arranged above the side region and guides the operating current to the center of the N-type semiconductor layer as the starting point for diffusion, which has high current dispersion and can avoid interference with the gold wire of the package caused by the center placement of the N-type electrode and the local high current problem caused by the N-type electrode placement at the edge design; in addition, the light-emitting semiconductor layer is not arranged below the N-type electrode, so the light-emitting semiconductor layer does not suffer from stress damage and brittle cracking during the wire bonding process, and there is no risk of cracking or separation of the light-emitting semiconductor layer caused by wire bonding in subsequent processes, which can increase reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 , is a schematic cross-sectional view of a structure of an embodiment of the present invention;

[0011] Figure 2 , is a schematic top view of the structure of an embodiment of the present invention;

[0012] Figure 3 , is a schematic top view of the structure of another embodiment of the present invention;

[0013] Figure 4 , is a schematic diagram of a circuit path using small and medium currents in the present invention;

[0014] Figure 5, is a schematic diagram of a circuit path using a large current in the present invention;

[0015] Figure 6 , is a schematic diagram of current density contour lines of the present invention;

[0016] Figure 7 , is a schematic diagram of the excitation light reflection path of the present invention;

[0017] Figure 8 , is a schematic diagram of the excitation light reflection path according to another embodiment of the present invention;

[0018] Figure 9 , is a schematic diagram of the reflection path of the excitation light according to another embodiment of the present invention;

[0019] Figure 10 , is a schematic top view of the structure of the N electrode of a large-size wafer of the present invention;

[0020] Figure 11 , which is a bottom-up schematic diagram of the structure of the P electrode of a large-size chip of the present invention. DETAILED DESCRIPTION

[0021] The detailed description and technical content of the present invention are now described as follows with reference to the accompanying drawings:

[0022] See also Figure 1 and Figure 2 As shown, the present invention is a vertical light-emitting diode structure with high current dispersion and high reliability, which includes a P-type electrode 10, a conductive substrate 20, a light-emitting semiconductor layer 30, an ohmic contact metal layer 40, an N-type electrode bridge structure 50, and an N-type electrode 60. The P-type electrode 10 is disposed on one side of the conductive substrate 20, and the other side of the conductive substrate 20 has a central region 21 and a side region 22, and the side region 22 is adjacent to the central region 21.

[0023] The light-emitting semiconductor layer 30 is disposed on the central region 21 of the conductive substrate 20, and the light-emitting semiconductor layer 30 includes a P-type semiconductor layer 31, a quantum well layer 32 (Multiple-Quantum Well, MQW) and an N-type semiconductor layer 33. The P-type semiconductor layer 31 is disposed on the conductive substrate 20, the quantum well layer 32 (MQW) is disposed on the P-type semiconductor layer 31, and the N-type semiconductor layer 33 is disposed on the quantum well layer 32.

[0024] The ohmic contact metal layer 40 is disposed at the center of the N-type semiconductor layer 33 and forms an ohmic contact with the N-type semiconductor layer 33. The N-type electrode bridging structure 50 comprises a bridging insulating layer 51 and a bridging conductive layer 52. The bridging insulating layer 51 is disposed across the N-type semiconductor layer 33 and the side region 22 of the conductive substrate 20, and is adjacent to the ohmic contact metal layer 40. The bridging conductive layer 52 is disposed on the bridging insulating layer 51. One end of the bridging conductive layer 52 is connected to the ohmic contact metal layer 40, and the other end of the bridging conductive layer 52 extends to the side region 22 of the conductive substrate 20. The N-type electrode 60 is used for wire bonding and is disposed on the bridging conductive layer 52 and above the side region 22.

[0025] In a preferred embodiment, the conductive substrate 20 may include a buffer layer 23, a bonding layer 24 and an alternative substrate 25, the jumper insulating layer 51 and the light-emitting semiconductor layer 30 are arranged on the buffer layer 23, the P-type electrode 10 is arranged on the alternative substrate 25, and the bonding layer 24 bonds and fixes the buffer layer 23 and the alternative substrate 25.

[0026] In addition, the present invention may further include an auxiliary P-type electrode 70, which is disposed on the side region 22 of the conductive substrate 20. The side region 22 surrounds the central region 21, and the auxiliary P-type electrode 70 and the N-type electrode 60 are located on the side region 22 on different sides of the central region 21. Figure 2 shown.

[0027] In another embodiment, the side region 22 also surrounds the central region 21 , and the auxiliary P-type electrode 70 and the N-type electrode 60 are located on the side region 22 on the same side of the central region 21 . Figure 3 shown.

[0028] See also Figure 4 As shown, when the light emitting semiconductor layer 30 is driven to emit light, a working current I needs to be generated in the light emitting semiconductor layer 30. Figure 1 In the structure shown, when the working current I is a small current to drive the vertical light emitting diode for low brightness, either the P-type electrode 10 or the auxiliary P-type electrode 70 can be selected as a first electrode ( Figure 4 As shown, the P-type electrode 10 is selected, and the N-type electrode 60 is used as a second electrode, and an operating voltage (not shown) is supplied between the first electrode and the second electrode, so that the operating current I can be generated and enters the light-emitting semiconductor layer 30 through the ohmic contact metal layer 40.

[0029] Please refer to Figure 5As shown, when the working current I needs to drive the vertical light-emitting diode for high brightness, the P-type electrode 10 and the auxiliary P-type electrode 70 can both be used as a first electrode, and the N-type electrode 60 can be used as a second electrode, and a large working voltage is supplied between the first electrode and the second electrode to generate a large working current I. However, since the large working current I has two paths, it will be dispersed to reduce the current density of the working current I, avoiding the problem of local high temperature causing premature aging or even burning of the component.

[0030] Please refer to Figure 2 or Figure 3 As shown, in order to further disperse the current and make the current uniformly pass through the light emitting semiconductor layer 30, the present invention further includes at least one auxiliary conductive circuit 42, which is disposed on the N-type semiconductor layer 33 and connected to the ohmic contact metal layer 40 (as shown in FIG. Figure 1 As shown), the at least one auxiliary conductive line 42 is connected to the N-type semiconductor layer 33 through an auxiliary ohmic contact metal layer 421. In one embodiment, the at least one auxiliary conductive line 42 can be diverged in all directions. Figure 6 As shown, current density contour lines P1 and P2 are drawn, wherein the value of the current density contour line P1 is greater than the value of the current density contour line P2, that is, the current density is highest at the center of the N-type semiconductor layer 33 and gradually decreases toward the periphery.

[0031] Please also refer to Figure 7 、 Figure 8 and Figure 9 As shown, in order to increase the brightness, the conductive substrate 20 can be provided with a conductive metal light reflecting layer 80 in ohmic contact with the P-type semiconductor 31 in the area adjacent to the light emitting semiconductor layer 30, and the contact surface between the ohmic contact metal layer 40 and the N-type semiconductor layer 33 can be provided with an electrode reflecting layer 81 protruding toward the N-type semiconductor layer 33. The electrode reflecting layer 81 is formed by making the ohmic contact metal layer 40 use a highly reflective metal and matching the N-type semiconductor layer 33 below to form a convex reflecting surface. The shape of the electrode reflecting layer 81 is selected from a single convex reflector (such as Figure 7 As shown), continuous convex reflector (such as Figure 8 As shown) and multiple slightly tilted mirrors (as Figure 9any one of the above). Through the combination of the conductive metal light reflecting layer 80 and the electrode reflecting layer 81, when the light emitting semiconductor layer 30 generates an excitation light L, the excitation light L that was originally shielded by the ohmic contact metal layer 40 can be emitted from a light emitting surface of the light emitting semiconductor layer 30 through multiple reflections of the conductive metal light reflecting layer 80 and the electrode reflecting layer 81, thereby increasing the light extraction rate of the excitation light L and thus improving the luminous brightness. Similarly, the N-type electrode jumper structure 50 can also reduce light blocking by this method, wherein the contact surface between the jumper conductive layer 52 and the jumper insulating layer 51 can be provided with a jumper reflecting layer 82 that protrudes toward the jumper insulating layer 51. In detail, in one embodiment, the jumper conductive layer 52 is made of a metal with high reflectivity, and the jumper insulating layer 51 is made of an insulating material with high light transmittance (such as SiO2, SiN). Furthermore, this embodiment can use etching to form a downwardly convex structure on the plane where the highly transparent cross-connecting insulating layer 51 (transparent) contacts the cross-connecting conductive layer 52. Thus, the cross-connecting conductive layer 52 functions as a highly reflective metal, allowing the N-type electrode cross-connecting structure 50 to form a reflector. The convex structure can be shaped as any of a single convex reflector, a continuous convex reflector, and a multi-slightly inclined reflector. This utilizes multiple reflections from the conductive metal light-reflecting layer 80 and the cross-connecting reflective layer 82 to increase the light extraction efficiency of the excitation light L.

[0032] Please refer to Figure 10 As shown, when the light-emitting semiconductor layer 30 is a larger-sized chip (for example, 3mmx3mm), the module expansion concept can be used to configure the circuit. In more detail, the present invention may also include a plurality of auxiliary N-type electrodes 90, which are centered on the ohmic contact metal layer 40 and dispersedly arranged on the N-type semiconductor layer 33, and the plurality of auxiliary N-type electrodes 90 are respectively connected to the ohmic contact metal layer 40 through an N-type electrode conductive line 91 arranged on the N-type semiconductor layer 33, and in order to clearly show the connection relationship between the ohmic contact metal layer 40 and the N-type electrode conductive line 91, the jumper conductive layer 52 above the ohmic contact metal layer 40 is omitted and not drawn. The plurality of auxiliary N-type electrodes 90 are respectively connected to the N-type semiconductor layer 33 through another auxiliary ohmic contact metal layer 901. In order to allow the working current (not drawn in Figure 10 In the embodiment, the plurality of N-type conductive lines 91 and the contact surface of the N-type semiconductor layer 33 may each have a line insulation layer 92. That is to say, the working current can only enter the N-type semiconductor layer 33 from the ohmic contact metal layer 40 and the plurality of auxiliary N-type electrodes 90. As can be seen from the current density contour line P3 of the working current, part of the working current can be guided to the surrounding areas of the N-type semiconductor layer 33, namely the plurality of auxiliary N-type electrodes 90, thereby improving the uniformity of light emission.

[0033] See also Figure 11 As shown, the auxiliary P-type electrode 70 (such as Figure 1 As shown), the auxiliary P-type electrode 70 is disposed on the side region 22 of the conductive substrate 20. In order to further disperse the current, the P-type electrode 10 and the conductive substrate 20 ( Figure 11 The P-type electrode 10 is not shown in the figure and can be divided by multiple insulating isolation channels 11. The multiple insulating isolation channels 11 can achieve an insulating effect by forming gaps using a semiconductor etching process. The multiple insulating isolation channels 11 divide the P-type electrode 10 into multiple P-type sub-electrodes 101, and the positions of the multiple P-type sub-electrodes 101 correspond to the multiple auxiliary N-type electrodes 90. At the same time, one of the P-type sub-electrodes 101 is connected to the auxiliary P-type electrode 70 and selectively connects to other P-type sub-electrodes 101 through multiple P-type conductive lines 12 provided on the multiple insulating isolation channels 11, so that the multiple P-type sub-electrodes 101 connected to the auxiliary P-type electrode 70 are arranged in an intermittent manner. In other words, only some of the multiple P-type sub-electrodes 101 are electrically connected to the auxiliary P-type electrode 70. Therefore, when higher current operation and more forced P-side current dispersion are required, the current can be specified to pass only through the P-type electrode 10 or the auxiliary P-type electrode 70. In combination with the ohmic contact metal layer 40 to generate the working current, the current can be further forced to be dispersed, the heat source dispersion is improved, and the heat dissipation effect is increased.

[0034] As described above, the features of the present invention include at least:

[0035] 1. Adopting vertical light emitting diode structure design, it has high axial light characteristics.

[0036] 2. By utilizing the N-type electrode jumper structure, the N-type electrode can be placed above the side area and guide the working current to disperse starting from the center of the N-type semiconductor layer. This has high current dispersion and can avoid the interference of the package gold wire caused by placing the N-type electrode in the middle and the local high current problem caused by placing the N-type electrode at the edge. In addition to improving the luminous efficiency, it can also increase the reliability of the component.

[0037] 3. Through the arrangement of the electrode reflective layer and the bridge reflective layer, in combination with the conductive metal light reflective layer, the light that would have been blocked is reflected multiple times and emitted from the light emitting surface, thereby increasing the light extraction rate of the excitation light.

[0038] 4. The light-emitting semiconductor layer is not disposed under the N-type electrode. Therefore, the light-emitting semiconductor layer is not subjected to stress damage and brittle cracking during the wire bonding process, thereby preventing the N-type semiconductor layer from being damaged by the wire bonding. At the same time, the wire bonding force safety value is increased, which is conducive to good wire bonding and can significantly reduce long-term reliability risks.

[0039] 5. When the packaging glue is pulled and stress is generated in the subsequent packaging process, the metal wire will not be indirectly pulled to cause the risk of cracking or separation of the light-emitting semiconductor layer.

[0040] 6. The dual-electrode design of the P-type electrode and the auxiliary P-type electrode can effectively disperse the working current, facilitate higher current operation, and effectively improve the risk of local high heat and component failure caused by uneven connection between the P-type electrode and the auxiliary P-type electrode and the package body or excessive pores.

[0041] 7. When the light-emitting semiconductor layer is a larger-sized chip (for example, 3mm x 3mm), the modular expansion concept can be utilized. Through the arrangement of the multiple auxiliary N-type electrodes, the multiple N-type electrode conductive circuits, and the multiple circuit insulation layers, the working current can be dispersed and guided from the ohmic contact metal layer and the multiple auxiliary N-type electrodes into the N-type semiconductor layer, thereby effectively dispersing the working current to improve the uniformity of light emission.

[0042] 8. Compared with the prior art (such as U.S. Patent No. US8319250), the process of the present invention is relatively simple, low-cost, and has better structural strength and is more resistant to physical damage; it also increases the current dispersion effect of the P-type electrode.

Claims

1. A vertical light emitting diode structure with high current dispersion and high reliability, characterized in that: Include: A P-type electrode; a conductive substrate, wherein the P-type electrode is disposed on one side of the conductive substrate, and the other side of the conductive substrate has a central region and a side region adjacent to the central region; a light-emitting semiconductor layer disposed on the central region of the conductive substrate, the light-emitting semiconductor layer comprising a P-type semiconductor layer disposed on the conductive substrate, a quantum well layer disposed on the P-type semiconductor layer, and an N-type semiconductor layer disposed on the quantum well layer; an ohmic contact metal layer, the ohmic contact metal layer being disposed at the center of the N-type semiconductor layer and in ohmic contact with the N-type semiconductor layer; an N-type electrode bridge structure, the N-type electrode bridge structure comprising a bridge insulating layer and a bridge conductive layer, the bridge insulating layer being disposed across the N-type semiconductor layer and the side region of the conductive substrate, and the bridge insulating layer being adjacent to the ohmic contact metal layer, and the bridge conductive layer being disposed on the bridge insulating layer, with one end of the bridge conductive layer connected to the ohmic contact metal layer and the other end of the bridge conductive layer extending to the side region of the conductive substrate; an N-type electrode disposed on the bridge conductive layer and located above the side region; as well as An auxiliary P-type electrode is disposed on the side area of ​​the conductive substrate.

2. The vertical light emitting diode structure according to claim 1, wherein: The side region surrounds the central region, and the auxiliary P-type electrode and the N-type electrode are located on the side region at the same side of the central region.

3. The vertical light emitting diode structure according to claim 1, wherein: The side region surrounds the central region, and the auxiliary P-type electrode and the N-type electrode are located on the side regions at different sides of the central region.

4. The vertical light emitting diode structure according to claim 1, wherein: Either the P-type electrode or the auxiliary P-type electrode is selected as a first electrode, and the N-type electrode is used as a second electrode, and a working voltage is supplied between the first electrode and the second electrode.

5. The vertical light emitting diode structure according to claim 1, wherein: The P-type electrode and the auxiliary P-type electrode are both used as a first electrode, and the N-type electrode is used as a second electrode, and a working voltage is supplied between the first electrode and the second electrode.

6. The vertical light emitting diode structure according to claim 1, wherein: The invention also comprises at least one auxiliary conductive circuit, which is arranged on the N-type semiconductor layer and connected to the ohmic contact metal layer. The at least one auxiliary conductive circuit is connected to the N-type semiconductor layer through an auxiliary ohmic contact metal layer.

7. The vertical light emitting diode structure according to claim 6, wherein: The at least one auxiliary conductive circuit radiates in all directions.

8. The vertical light emitting diode structure according to claim 1, wherein: The conductive substrate is provided with a conductive metal light reflecting layer in a region adjacent to the light emitting semiconductor layer.

9. The vertical light emitting diode structure according to claim 8, wherein: An electrode reflection layer protruding toward the N-type semiconductor layer is provided on the contact surface between the ohmic contact metal layer and the N-type semiconductor layer.

10. The vertical light emitting diode structure according to claim 9, wherein: The outer shape of the electrode reflection layer is selected from any one of a single convex reflection mirror, a continuous convex reflection mirror and a multiple slightly inclined reflection mirror.

11. The vertical light emitting diode structure according to claim 8, wherein: A bridging reflective layer convex toward the bridging insulating layer is provided on the contact surface between the bridging conductive layer and the bridging insulating layer.

12. The vertical light emitting diode structure according to claim 11, wherein: The outer shape of the bridging reflective layer is selected from any one of a single convex reflective mirror, a continuous convex reflective mirror and a multiple slightly inclined reflective mirror.

13. The vertical light emitting diode structure according to claim 1, wherein: The invention also includes a plurality of auxiliary N-type electrodes, which are dispersedly arranged on the N-type semiconductor layer with the ohmic contact metal layer as the center, and the plurality of auxiliary N-type electrodes are respectively connected to the ohmic contact metal layer through an N-type electrode conductive line arranged on the N-type semiconductor layer, and the contact surface between the plurality of N-type electrode conductive lines and the N-type semiconductor layer is respectively provided with a line insulation layer, and the plurality of auxiliary N-type electrodes are respectively connected to the N-type semiconductor layer through another auxiliary ohmic contact metal layer.

14. The vertical light emitting diode structure according to claim 13, wherein: The device further comprises an auxiliary P-type electrode, which is arranged on the side area of ​​the conductive substrate.

15. The vertical light emitting diode structure according to claim 14, wherein: The P-type electrode and the conductive substrate are divided by a plurality of insulating isolation channels, so that the P-type electrode is divided into a plurality of P-type sub-electrodes, and the positions of the plurality of P-type sub-electrodes respectively correspond to the plurality of auxiliary N-type electrodes. At the same time, one of the P-type sub-electrodes is connected to the auxiliary P-type electrode, and the P-type sub-electrode connected to the auxiliary P-type electrode is selectively connected through a plurality of P-type conductive lines arranged in the plurality of insulating isolation channels, so that the plurality of P-type sub-electrodes connected to the auxiliary P-type electrode are arranged at intervals.

16. The vertical light emitting diode structure according to claim 1, wherein: The conductive substrate includes a buffer layer, a bonding layer and a replacement substrate. The crossover insulating layer and the light emitting semiconductor layer are arranged on the buffer layer, the P-type electrode is arranged on the replacement substrate, and the bonding layer adheres and fixes the buffer layer and the replacement substrate.

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