A semiconductor laser array capable of outputting strip-shaped light spots and a method for manufacturing the same

Abstract

The semiconductor laser array that outputs a stripe-shaped light spot in the embodiments of the present invention solves the problem of on-chip integrated beam shaping for semiconductor laser arrays. By employing an on-chip integrated slow-axis collimator and a high-fill-factor single-mode waveguide as the array's beam shaping and power amplification components, the slow-axis divergence angle of the light beam emitted by each laser unit in the array is collimated under high-current operating conditions, achieving a compressed slow-axis divergence angle while retaining the fast-axis divergence angle, resulting in a linear light spot output. Simultaneously, the dense arrangement of the single-mode waveguide array allows the linear light spots of each unit to be spatially superimposed along the slow axis, forming a stripe-shaped light spot with high power density and uniform energy distribution. Accordingly, the preparation method offers the advantages of full-surface patterning, simple process, and compact structure.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor optoelectronic technology, and in particular to a semiconductor laser array that outputs strip-shaped light spots and a preparation method thereof. Background Art

[0002] Semiconductor lasers use semiconductor materials as their working medium. They offer advantages such as high laser power, high electro-optical conversion efficiency, low power consumption, compact size, light weight, and direct electrical pumping. They have broad application prospects in laser processing and laser pest control. Laser pest control technology, a physical pest control method that uses high-power lasers as light sources, involves irradiating crop pests with high-power lasers, using the laser's biothermal effect to destroy or ablate the insects, ultimately eliminating them. This method is non-contact, fast, low-power, pesticide-free, and environmentally friendly. At present, the existing laser insecticide devices are mainly automated laser insecticide devices based on computer (Chinese patent application 201910727698.X), automatic machinery (Chinese patent application 201910020838.X) or agricultural Internet (Chinese patent applications 201620192349.4, 202022305560.1) technology. The above-mentioned devices require supporting equipment such as agricultural Internet and computers, and are more suitable for application scenarios with complete facilities such as plant factories. Considering that the degree of electrification of most greenhouses in my country is not high, a miniaturized laser insecticide device that can be manually handheld is needed. In order to ensure the improvement of the efficiency and effect of insect control, higher requirements are placed on the output spot morphology and power density uniformity of the semiconductor laser device. Among them, a laser beam with uniform power density and linear spot distribution is a relatively ideal laser pest control working mode. It can be used as a laser module for automatic pest control machinery or a manual handheld pest control light source, and is suitable for a variety of application scenarios such as fully automatic plant factories, modern greenhouses and ordinary greenhouses.

[0003] Existing semiconductor laser modules that output linear spots mainly include fiber output laser modules based on complex lens groups, linear spot laser modules based on slow axis collimators, vertical cavity surface emitting lasers based on grating structures, and other semiconductor laser modules that output linear spots.

[0004] Although semiconductor laser modules that output line spots have made great progress in improving output power and power density, various types of line spot semiconductor laser modules still have various problems.

[0005] The fiber-optic output laser module based on a complex lens group (Chinese patent applications 201921003373.2 and 202023349208.4) usually focuses and shapes the laser of the semiconductor laser chip through lenses, prisms, and optical components of the optical fiber to obtain a fiber-coupled semiconductor laser module that outputs a linear light spot. The system requires at least 5 lenses to complete the shaping of the laser beam, resulting in a complex system structure, long installation time, and high cost.

[0006] The linear spot laser module based on slow-axis collimators (Chinese patent application 201610542992.X) usually uses multiple semiconductor lasers packaged vertically along the fast axis direction. The slow axis of the laser beam is compressed into a linear shape through a set of slow-axis collimators. The large fast-axis divergence angle (30°-60°) is used to construct a linear spot output. Since the laser is packaged in an overlapping manner along the fast axis, multiple welding and optical path adjustments are required to obtain a stable linear spot. However, its structure and process are very complex, the volume is bulky, and the cost is high, which cannot meet the demand for miniaturized light sources in the field of laser disinfection.

[0007] The vertical cavity surface emitting laser based on the grid structure (Chinese patent application 201310066180.9) realizes the output of a linear spot laser beam by preparing a grid structure with unequal spacing on the N-side electrode. This technology is mainly suitable for single-tube vertical cavity surface emitting laser devices or one-dimensional arrays. It is limited by the small resonant cavity volume of the vertical cavity surface emitting laser, that is, the small volume of the gain medium. It is difficult to obtain high-power laser output and cannot form a large-sized high-density laser spot. It is not suitable for the field of laser disinfection.

[0008] Conventional semiconductor laser modules that output linear spots generally use multiple laser tubes spliced ​​together or complex coupling optical paths to achieve linear spot laser output. This leads to problems such as complex module structure, long installation time, and high cost. The above problems seriously affect the application prospects of semiconductor laser modules with linear spot output in the field of laser disinfection. Summary of the Invention

[0009] In view of this, an embodiment of the present invention provides a semiconductor laser array that outputs a stripe-shaped light spot and a manufacturing method thereof, so as to improve the uniformity of the energy distribution of the linear light spot.

[0010] In the first aspect, the present invention provides a semiconductor laser array that outputs a strip-shaped light spot, comprising a laser waveguide structure prepared on the P surface of an epitaxial wafer, wherein along the X direction from the reflection surface to the light-emitting surface, there are a high-filling-factor single-mode waveguide array and an on-chip integrated slow-axis collimating lens arranged at equal intervals, wherein the optical axes of the high-filling-factor single-mode waveguide array and the on-chip integrated slow-axis collimating dielectric lens coincide with each other, and the light-input side of the high-filling-factor single-mode waveguide array is provided with a high-reflection film, and the light-output side of the high-filling-factor single-mode waveguide array is provided with an anti-reflection film, and the high-filling-factor single-mode waveguide array is provided with an anti-reflection film. The array and the anti-reflection film form a resonant cavity. The high filling factor single-mode waveguide array includes a plurality of equally spaced laser units. The output beams of the laser units pass through the on-chip integrated slow-axis collimating lens on the same optical axis, so that the slow-axis divergence angle of the beam of each laser unit is reduced to a preset angle, the fast-axis direction is kept uncollimated, and the ratio of the fast-axis and slow-axis beam divergence angles is increased to a target ratio. The output beam of each laser unit is shaped into a linear light spot. Combined with the light spot output by the high filling factor single-mode waveguide array, a strip-shaped light spot is formed on a plane at a preset distance from the light-emitting surface.

[0011] As an optional solution, the epitaxial wafer is composed of N-side electrode, N-type substrate, N-type cladding, N-type waveguide layer, active layer, P-type waveguide layer, P-type cladding, and P-side electrode from bottom to top along the Z direction.

[0012] As an optional solution, the laser waveguide structure is composed of a portion of the P-type waveguide layer, the P-type cladding layer and the P-surface electrode.

[0013] As an optional solution, the spacing between adjacent laser units is 15 microns to 60 microns.

[0014] As an optional solution, the spacing between the high filling factor single-mode waveguide array and the on-chip integrated slow-axis collimating lens is 1 micron to 5 microns.

[0015] As an optional solution, the target ratio is 30:1.

[0016] As an optional solution, the preset angle is 2°, and the divergence angle of the fast axis is 60°.

[0017] As an optional solution, the preset distance is 20 cm to 25 cm.

[0018] As an optional solution, the material system of the high filling factor single-mode waveguide array is indium gallium arsenide InGaAs, gallium arsenide GaAs or aluminum gallium arsenide AlGaAs, and the laser wavelength is 630nm to 1060nm.

[0019] In a second aspect, the present invention provides a method for preparing a semiconductor laser array that outputs a stripe-shaped light spot, the method comprising:

[0020] The deposition grooves for the on-chip integrated slow-axis collimator mirror are made using i-line lithography and plasma etching technology, etching into the N-type substrate layer;

[0021] Using high-precision dielectric deposition technology, a variable-angle slow-axis collimating dielectric lens array is prepared;

[0022] Use photolithography and plasma etching technology to make equally spaced single-mode waveguides, etching into the P-type optical waveguide layer;

[0023] Using deep etching technology, the semiconductor material around the variable-angle slow-axis collimating dielectric lens is removed, and etching is performed to the N-type substrate layer to construct an etched light-emitting surface;

[0024] A P-side electrode is fabricated, the N-type substrate layer is thinned, an N-side electrode is plated on the N-type substrate layer, a high-reflection film is plated on the reflective end face of the equally spaced single-mode waveguide, and an anti-reflection film is prepared by top deposition on the emitting end face of the equally spaced single-mode waveguide and the end face through which the light beam of the variable-angle slow-axis collimating dielectric lens passes, thereby completing the preparation of a semiconductor laser array that outputs a strip-shaped light spot.

[0025] The semiconductor laser array that outputs a stripe-shaped light spot in the embodiments of the present invention solves the problem of on-chip integrated beam shaping for semiconductor laser arrays. By employing an on-chip integrated slow-axis collimator and a high-fill-factor single-mode waveguide as the array's beam shaping and power amplification components, the slow-axis divergence angle of the light beam emitted by each laser unit in the array is collimated under high-current operating conditions, achieving a compressed slow-axis divergence angle while retaining the fast-axis divergence angle, resulting in a linear light spot output. Simultaneously, the dense arrangement of the single-mode waveguide array allows the linear light spots of each unit to be spatially superimposed along the slow axis, forming a stripe-shaped light spot with high power density and uniform energy distribution. Accordingly, the preparation method offers the advantages of full-surface patterning, simple process, and compact structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A schematic structural diagram of a semiconductor laser array that outputs a stripe-shaped light spot is provided in an embodiment of the present invention;

[0027] Figure 2 A side view of the structure of a semiconductor laser array that outputs a stripe-shaped light spot is provided in an embodiment of the present invention;

[0028] Figure 3 A top view of the structure of a semiconductor laser array that outputs a stripe-shaped light spot is provided in an embodiment of the present invention;

[0029] Figure 4A schematic diagram of light beam transmission of a semiconductor laser array that outputs a strip-shaped light spot is provided in an embodiment of the present invention;

[0030] Figure 5 A schematic diagram of a far-field light spot of a semiconductor laser array that outputs a strip-shaped light spot is provided in an embodiment of the present invention;

[0031] Figure 6 The present invention provides a top view of a structure of a variable-angle slow-axis collimator integrated in a semiconductor laser array that outputs a strip-shaped light spot in an embodiment of the present invention.

[0032] Reference numerals: 101 high-reflection film, 102 high-filling-factor single-mode waveguide array, 103 anti-reflection film, 104 on-chip integrated slow-axis collimator, 201 P surface electrode, 202 P-type cladding, 203 P-type waveguide layer, 204 active layer, 205 N-type waveguide layer, 206 N-type cladding, 207 N-type substrate layer, 208 N-surface electrode, 301 uncollimated light beam, 302 slow-axis collimated light beam. DETAILED DESCRIPTION

[0033] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0034] The terms "first," "second," "third," "fourth," and the like in the specification and claims of the present invention and in the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a particular order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate so that the embodiments described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "including" and "having," and any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0035] Combine Figure 1 、 Figure 2 and Figure 3As shown, in an embodiment of the present invention, a semiconductor laser array for outputting a stripe-shaped light spot is provided, comprising a laser waveguide structure fabricated on the P surface of an epitaxial wafer. Along the X direction, from the reflection surface to the light-emitting surface, there are a high-filling-factor single-mode waveguide array 102 and an on-chip integrated slow-axis collimating lens 104 arranged at equal intervals. The optical axes of the high-filling-factor single-mode waveguide array 102 and the on-chip integrated slow-axis collimating dielectric lens coincide with each other. The light-incoming side of the high-filling-factor single-mode waveguide array 102 is provided with a high-reflection film 101. The light-emitting side of the high filling factor single-mode waveguide array 102 is provided with an anti-reflection film 103. A resonant cavity is constructed by the high-reflection film 101, the high filling factor single-mode waveguide array 102, and the anti-reflection film 103. The resonant cavity is used as a laser generating component. The high filling factor single-mode waveguide array 102 includes a plurality of laser units arranged at equal intervals. The non-collimated light beam 301 output by the laser unit is collimated by the on-chip integrated slow axis collimating lens 104 on the same optical axis to obtain a slow axis collimating lens. The axial collimated beam 302 reduces the slow axis divergence angle of each laser unit beam to a preset angle, which may be 2°. Specifically, the slow axis divergence angle may be reduced from 15° to below 2°. The fast axis direction is maintained without collimation, for example, the divergence angle may be maintained at 60°. The ratio of the fast and slow axis beam divergence angles is increased to a target ratio, which may be 30:1. The initial fast and slow axis beam divergence angle ratio is 4:1. The output beam of each laser unit is shaped into a linear light spot. Combined with the light spot output by the high filling factor single-mode waveguide array 102, a strip-shaped light spot is formed on a plane at a preset distance from the light output surface. The high filling factor single-mode waveguide array 102 is used. By designing the waveguide with the minimum spacing, the self-heating effect and thermal crosstalk of the laser unit are reduced, and the stable operation capability of the laser array is improved. At the same time, the number of laser units is increased. After the output laser beam passes through the on-chip integrated slow axis collimator, the laser beams of each unit are fully spatially superimposed, thereby improving the uniformity of the energy distribution of the linear light spot.

[0036] Combine Figure 2 As shown, the epitaxial wafer comprises, from bottom to top along the Z direction, an N-side electrode 208, an N-type substrate, an N-type cladding, an N-type waveguide layer 205, an active layer, a P-type waveguide layer 203, a P-type cladding 202, and a P-side electrode 201. The laser waveguide structure is composed of part of the P-type waveguide layer 203, the P-type cladding 202, and the P-side electrode 201.

[0037] As an optional solution, the spacing between adjacent laser units is 15 microns to 60 microns, which is not limited.

[0038] As an optional solution, the distance between the high filling factor single-mode waveguide array 102 and the on-chip integrated slow-axis collimating lens 104 is 1 micron to 5 microns.

[0039] As an optional solution, the material system of the high filling factor single-mode waveguide array 102 is indium gallium arsenide (InGaAs), gallium arsenide (GaAs), or aluminum gallium arsenide (AlGaAs), and the laser wavelength is 630 nm to 1060 nm.

[0040] Combine Figure 4 and 5 As shown, in an embodiment of the present invention, a semiconductor laser array for outputting a strip-shaped light spot is provided, comprising a laser waveguide structure fabricated on the P surface of an epitaxial wafer, wherein along the X direction from the reflection surface to the light-emitting surface, there are a high filling factor single-mode waveguide array 102 and an on-chip integrated slow axis collimating lens 104 arranged at equal intervals, wherein the optical axes of the high filling factor single-mode waveguide array 102 and the on-chip integrated slow axis collimating dielectric lens coincide with each other, and a high reflective film 101 is provided on the light-incoming side of the high filling factor single-mode waveguide array 102. An anti-reflection film 103 is provided on the light-emitting side of the sub-single-mode waveguide array 102. A resonant cavity is constructed by the high-reflection film 101, the high-filling-factor single-mode waveguide array 102, and the anti-reflection film 103. The resonant cavity is used as a laser generating component. The high-filling-factor single-mode waveguide array 102 includes multiple laser units arranged at equal intervals. Each laser unit can output a single transverse-mode laser beam. The spacing between the laser units is equal, and the optional spacing is 15 microns to 60 microns, which improves the energy distribution uniformity of the strip-shaped light spot. Figure 4 The distance between the on-chip integrated slow-axis collimator 104 and the array light-emitting surface is 1 micron to 5 microns. The non-collimated light beam 301 output by the laser unit is collimated by the on-chip integrated slow-axis collimator 104 on the same optical axis to obtain a slow-axis collimated light beam 302, so that the slow-axis divergence angle of each laser unit beam is reduced from 15° to less than 2°. At the same time, the fast-axis direction is not collimated, and the divergence angle is maintained at 60°. The ratio of the fast-axis and slow-axis divergence angles is increased from 4:1 to 30:1. The output beam of each laser unit is shaped into a linear light spot. Combined with the light spot output by the densely arranged high-filling-factor single-mode waveguide array 102, a strip light spot with a spot size of 30 cm × 1.5 cm is formed on a plane 20 cm to 25 cm away from the light-emitting surface. Figure 5 The light spot is formed with high power density and uniform energy distribution. The edge power density of the light spot is at least 80% of the center power density. When used in disinfection scenes, the power density is required to be at least 2W / cm 2 In order to meet the energy requirements of laser disinfection.

[0041] The semiconductor laser array that outputs a stripe-shaped light spot in the embodiments of the present invention solves the problem of on-chip integrated beam shaping in semiconductor laser arrays. By employing an on-chip integrated slow-axis collimator and a high-fill-factor single-mode waveguide as the array's beam shaping and power amplification components, the slow-axis divergence angle of the beam emitted by each laser unit in the array is collimated and compressed under high-current operating conditions, while preserving the fast-axis divergence angle, resulting in a linear light spot output. Furthermore, the dense arrangement of the single-mode waveguide array allows the linear light spots of each unit to be spatially superimposed along the slow axis, forming a stripe-shaped light spot with high power density and uniform energy distribution.

[0042] Accordingly, an embodiment of the present invention further provides a method for preparing a semiconductor laser array that outputs a strip-shaped light spot, the method comprising:

[0043] S101, using i-line lithography and plasma etching technology to make a deposition groove for an on-chip integrated slow axis collimator, etching to the N-type substrate layer 207;

[0044] S102. Using high-precision dielectric deposition technology, a variable-angle slow-axis collimating dielectric lens array is prepared;

[0045] S103, using photolithography and plasma etching technology to produce equidistant single-mode waveguides, etching to the P-type optical waveguide layer;

[0046] S104, using a deep etching technique to remove the semiconductor material around the variable-angle slow-axis collimating dielectric lens, etching down to the N-type substrate layer 207, and constructing an etched light-emitting surface;

[0047] S105: Fabricate a P-side electrode 201, thin the N-type substrate layer 207, plate an N-side electrode 208 on the N-type substrate layer 207, plate a high-reflection film 101 on the reflective end face of the equally spaced single-mode waveguide, and use a top deposition method to prepare an anti-reflection film 103 on the emitting end face of the equally spaced single-mode waveguide and the end face through which the light beam of the variable-angle slow-axis collimating dielectric lens passes, thereby completing the preparation of a semiconductor laser array that outputs a strip-shaped light spot.

[0048] In this embodiment, the material system is InGaAs / GaAs / AlGaAs, and the laser wavelength is 630nm-1060nm, but is not limited to the above materials and laser wavelengths. First, i-line lithography and plasma etching technology are used to make the deposition groove of the on-chip integrated slow axis collimator 104, and the groove is etched to the N-type substrate layer 207. Then, high-precision dielectric deposition technology is used to prepare the variable-angle slow axis collimator dielectric lens 104. Then, lithography and plasma etching technology are used to make the equally spaced single-mode waveguide 102, and the groove is etched to the P-type optical waveguide layer 203. Then, deep etching technology is used to remove the semiconductor material around the variable-angle slow axis collimator dielectric lens 104, and the groove is etched to the N-type substrate 207 to construct the etched light-emitting surface. Then, a P-side metal electrode is made, and then the substrate is thinned and the laser N-side metal electrode is plated. A high-reflection film 101 is plated on the reflective end face of the equally spaced single-mode waveguide 102. The light beam of the variable-angle slow-axis collimating dielectric lens 104 passes through the end face on the emitting end face of the equally spaced single-mode waveguide 102, and an anti-reflection film 103 is prepared by top deposition. The entire device is completed.

[0049] The method for fabricating a semiconductor laser array capable of outputting a stripe-shaped light spot in the embodiments of the present invention utilizes an on-chip integrated slow-axis collimator and a high-fill-factor single-mode waveguide as the array's beam shaping and power amplification components. This method ensures that, under high-current operation, the slow-axis divergence angle of the beam emitted by each laser unit in the array is collimated, resulting in a compressed slow-axis divergence angle while preserving the fast-axis divergence angle, thereby producing a linear light spot. Furthermore, the densely arranged single-mode waveguide array allows the linear light spots of each unit to be spatially superimposed along the slow axis, forming a stripe-shaped light spot with high power density and uniform energy distribution. This method offers the advantages of full-surface patterning, simple processing, and compact structure.

[0050] It should be understood that the various forms of the processes shown above can be used to reorder, add, or delete steps. For example, the steps described in the present disclosure can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solutions disclosed in the present disclosure can be achieved. This is not limited herein.

[0051] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.

Claims

1. A semiconductor laser array that outputs a stripe-shaped spot, characterized in that: The invention relates to a laser waveguide structure prepared on the P surface of an epitaxial wafer, wherein a high filling factor single-mode waveguide array and an on-chip integrated slow axis collimating lens are arranged in sequence with equal spacing from the reflection surface to the light output surface in the X direction. The optical axes of the high filling factor single-mode waveguide array and the on-chip integrated slow axis collimating dielectric lens coincide with each other. A high reflection film is provided on the light input side of the high filling factor single-mode waveguide array, and an anti-reflection film is provided on the light output side of the high filling factor single-mode waveguide array. A resonant cavity is constructed by the high reflection film, the high filling factor single-mode waveguide array, and the anti-reflection film. The high filling factor single-mode waveguide array includes a plurality of equally spaced laser units. The output beams of the laser units pass through the on-chip integrated slow-axis collimating lens on the same optical axis, so that the slow-axis divergence angle of the beam of each laser unit is reduced to a preset angle, the fast-axis direction is kept uncollimated, and the ratio of the fast-axis and slow-axis beam divergence angles is increased to a target ratio. The output beams of each laser unit are shaped into linear light spots. Combined with the light spots output by the high filling factor single-mode waveguide array, a stripe-shaped light spot is formed on a plane at a preset distance from the light output surface. The epitaxial wafer is composed of an N-side electrode, an N-type substrate, an N-type cladding layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type cladding layer, and a P-side electrode from bottom to top along the Z direction; The laser waveguide structure is composed of a portion of the P-type waveguide layer, the P-type cladding layer and the P-surface electrode; The distance between adjacent laser units is 15 microns to 60 microns.

2. The semiconductor laser array for outputting a stripe-shaped light spot according to claim 1, characterized in that: The spacing between the high filling factor single-mode waveguide array and the on-chip integrated slow axis collimating lens is 1 micron to 5 microns.

3. The semiconductor laser array for outputting a stripe-shaped light spot according to claim 1, characterized in that: The target ratio is 30:

1.

4. The semiconductor laser array for outputting a stripe-shaped light spot according to claim 1 or 3, characterized in that: The preset angle is 2°, and the divergence angle of the fast axis is 60°.

5. The semiconductor laser array for outputting a stripe-shaped light spot according to claim 1 or 3, characterized in that: The preset distance is 20 cm to 25 cm.

6. The semiconductor laser array for outputting a stripe-shaped light spot according to claim 1, wherein: The material system of the high filling factor single-mode waveguide array is indium gallium arsenide (InGaAs), gallium arsenide (GaAs) or aluminum gallium arsenide (AlGaAs), and the laser wavelength is 630 nm to 1060 nm.

7. A method for preparing a semiconductor laser array that outputs a stripe-shaped light spot, for preparing the semiconductor laser array that outputs a stripe-shaped light spot according to any one of claims 1 to 6, characterized in that: The method comprises: The deposition grooves for the on-chip integrated slow-axis collimator mirror are made using i-line lithography and plasma etching technology, etching into the N-type substrate layer; Using high-precision dielectric deposition technology, a variable-angle slow-axis collimating dielectric lens array is prepared; Use photolithography and plasma etching technology to make equally spaced single-mode waveguides, etching into the P-type optical waveguide layer; Using deep etching technology, the semiconductor material around the variable-angle slow-axis collimating dielectric lens is removed, and etching is performed to the N-type substrate layer to construct an etched light-emitting surface; A P-side electrode is fabricated, the N-type substrate layer is thinned, an N-side electrode is plated on the N-type substrate layer, a high-reflection film is plated on the reflective end face of the equally spaced single-mode waveguide, and an anti-reflection film is prepared by top deposition on the emitting end face of the equally spaced single-mode waveguide and the end face through which the light beam of the variable-angle slow-axis collimating dielectric lens passes, thereby completing the preparation of a semiconductor laser array that outputs a strip-shaped light spot.

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