A semiconductor device

Abstract

This invention provides a semiconductor device comprising a modular control component, the control component having a control box, a control board disposed within the control box, an auxiliary electrode signal connector disposed on the control board, and a temperature sensor signal connector disposed on the control board; and a modular power component disposed opposite to the lower end of the control component, the power component having a power box, a control signal connector disposed within the power box, and a temperature sensor connector disposed within the power box, wherein the control signal connector and the temperature sensor connector are open at corresponding positions in the power box, such that the auxiliary electrode signal connector and the temperature sensor signal connector extend beyond the control box and are plugged into and plugged into the control signal connector and the temperature sensor connector, respectively. This semiconductor device features compact space, high power density, and ease of installation and maintenance.

Description

Technical Field

[0001] This invention relates to the field of power electronics technology, and in particular to a modular, highly integrated semiconductor device. Background Technology

[0002] Power semiconductor devices have a wide range of applications, such as in the rail transportation sector. In existing technologies, the converter module, a core component of the converter, consists of standard packaged power semiconductor devices, heat sinks, low-inductance busbars, gate drivers, and structural components. Due to limitations in construction, device layout, and device function, semiconductor devices still have many shortcomings in terms of power density, intelligence, and ease of use. Summary of the Invention

[0003] To address some or all of the above problems, this invention provides a modular, highly integrated semiconductor device that meets the requirements of converter systems and features compact space, high power density, and ease of installation and maintenance.

[0004] This invention provides a semiconductor device comprising:

[0005] A modular control assembly, comprising a control box, a control board disposed within the control box, an auxiliary polarity signal connector disposed on the control board, and a temperature sensor signal connector disposed on the control board.

[0006] A modular power component is disposed relative to the lower end of the control component. The power component includes a power housing, a control signal connector disposed within the power housing, and a temperature sensor connector disposed within the power housing.

[0007] The control signal connector and the temperature sensor connector are open at corresponding positions in the power box, such that the auxiliary electrode signal connector and the temperature sensor signal connector protrude from the control box and are plugged into the control signal connector and the temperature sensor connector, respectively.

[0008] A further improvement of the present invention is that, on the control board, the auxiliary electrode signal connector and the temperature sensor signal connector are respectively disposed at both ends of the control board.

[0009] An improvement of the present invention is that a current sensor is provided at the AC terminal of the inner cavity of the control box, and the current sensor is connected to a socket at the AC terminal of the control board. At the same time, a low-inductance busbar is provided in the power box, and a bent plate-shaped AC connector is provided at the AC terminal of the low-inductance busbar. A detection hole is provided on the horizontal surface of the AC connector. A receiving cylinder is provided at the lower end of the control box for accommodating the sensing end of the current sensor. The receiving cylinder can protrude from the control box and extend into the power box and be inserted into the detection hole.

[0010] A further improvement of the present invention is that the control box includes:

[0011] Control box bottom plate

[0012] A control box side plate is disposed on the bottom plate of the control box, and the control box side plate is formed into a cylindrical shape.

[0013] The top plate of the control box covers the side panel of the control box.

[0014] Ventilation holes are provided on the side panel and top panel of the control box, and a notch is provided at the AC end of the side panel of the control box to expose the external interface on the control panel.

[0015] A further improvement of the present invention is that the power component further includes:

[0016] A substrate containing IGBT semiconductor chips is disposed within the power box.

[0017] A circuit board disposed on the substrate, the circuit board being capable of signal connection with the IGBT semiconductor chip on the substrate.

[0018] Copper bus terminals are disposed on the liner.

[0019] The low-inductance busbar is disposed on the circuit board, and the copper busbar terminals extend upward through the circuit board to connect to the low-inductance busbar.

[0020] A further improvement of the present invention is that pin-type signal leads are provided on the substrate to be inserted upwards into the circuit board to achieve connection.

[0021] A further improvement of the present invention is that the power component further includes:

[0022] heat sink,

[0023] A power box side plate is disposed on the upper surface of the heat sink, and the power box side plate is formed into a cylindrical shape.

[0024] A power box top plate is fitted onto the side panel of the power box to form the power box together with the side panel and the upper surface of the heat sink.

[0025] The liner is directly welded to the upper surface of the radiator.

[0026] An improvement of the present invention is that the cooling connector of the radiator is located at the DC end and is configured as a plug-in type.

[0027] An improvement of the present invention is that an insulating block is provided between the DC positive interface and the DC negative interface of the low-inductance busbar, and the insulating block, together with the DC positive interface and the DC negative interface, is constructed as a strip-shaped plug-in type.

[0028] An improvement of the present invention is that an insulating protective sleeve is provided at the position of the power box at the DC end, and the insulating protective sleeve is composed of a first grooved plate and a second grooved plate that are mated together.

[0029] Compared to existing technologies, the advantages of this invention are as follows: This application adopts a modular, layered design concept, achieving layering and isolation between the high-voltage, high-power and low-voltage control sections, thereby strengthening the internal insulation of the semiconductor device and reducing mutual interference. The low-voltage control section and the high-voltage power section use plug-in connections and assembly, which greatly improves assembly efficiency. Furthermore, plug-in connectors solve problems related to signal transmission reliability, long transmission paths, and consistency. In addition, the modular control and power components, as well as the semiconductor device itself, have high integration, merging with converter module technology, resulting in a compact design, high power density, and the use of IGBT semiconductor device-level technology to realize the converter phase module function. Both the external water circuit and the DC terminal use quick-plug interfaces, making product installation and application more convenient. The single-phase half-bridge main circuit has a wide range of applications and strong versatility and interchangeability. Attached Figure Description

[0030] The invention will now be described in more detail with reference to embodiments and the accompanying drawings.

[0031] Figure 1 This is a front view of the layered design of a semiconductor device according to an embodiment of the present invention;

[0032] Figure 2 This is an exploded view of a control component according to an embodiment of the present invention;

[0033] Figure 3 This is an exploded view of a power component according to an embodiment of the present invention;

[0034] Figure 4 This is a perspective view of a semiconductor device according to an embodiment of the present invention;

[0035] Figure 5 This is a perspective view of a semiconductor device according to an embodiment of the present invention from another angle;

[0036] Figure 6 This is a schematic diagram of the main circuit of a semiconductor device according to an embodiment of the present invention.

[0037] In the accompanying drawings, the same parts use the same reference numerals. The drawings are not to scale. Detailed Implementation

[0038] The invention will now be further described with reference to the accompanying drawings.

[0039] This invention provides a semiconductor device. For example... Figure 1 As shown, the semiconductor device includes a power component 1 and a control component 2. Both power component 1 and control component 2 are independent modules, assembled into the semiconductor device later. Furthermore, the power component 1 is arranged in a layered structure below the control component 2. This design utilizes a modular, layered design concept to achieve modular isolation between high-voltage, high-power and low-voltage control modules, thereby achieving isolation and insulation between the high-voltage, high-power section and the control section, and improving anti-interference performance.

[0040] In addition, such as Figure 2 As shown, the control assembly 2 includes a control box 5, a control board 6 disposed within the control box 5, an auxiliary electrode signal connector 4 disposed on the control board 6, and a temperature sensor signal connector 3 disposed on the control board 6. Meanwhile, as... Figure 3 As shown, the power component 1 includes a power housing 15, a control signal connector 18 disposed within the power housing 15, and a temperature sensor connector 16 disposed within the power housing 15. The control signal connector 18 is open at a corresponding position on the upper surface of the power housing 1, allowing the auxiliary electrode signal connector 4 to extend beyond the control housing 5 and be plugged into the control signal connector 18. Similarly, the temperature sensor connector 16 is also open at a corresponding position on the upper surface of the power housing 1, allowing the temperature sensor signal connector 3 to extend beyond the control housing 5 and be plugged into the temperature sensor connector 16. In other words, the power component 1 and the control component 2 achieve the transmission of critical auxiliary electrode control signals and temperature sensor signals through a quick plug-in / plug-out method. This structure facilitates rapid connection between the power component 1 and the control component 2, eliminating the need for conventional cable and screw connections between IGBTs and drive control boards, as well as the need for soldering pin connections, greatly improving assembly efficiency. It also shortens the signal transmission path and promotes a more balanced distribution of signals.

[0041] In one embodiment, the auxiliary electrode signal connector 4 and the temperature sensor signal connector 3 are located at opposite ends of the control board 6. This arrangement facilitates the isolation design of high and low voltage zones, thereby contributing to insulation isolation.

[0042] A current sensor 7 is installed at the AC terminal of the inner cavity of the control box 5. This arrangement optimizes the spatial layout of the structure, facilitates high integration, and thus helps reduce the size of the semiconductor device. Simultaneously, since the current sensor 7 is located within the control box 5, it helps ensure complete insulation between the current sensor 7 and the power component 1, eliminating the insulation risk from the power component 1 to the control component 2 and improving anti-interference performance. The current sensor 7 is connected to a socket 9 located at the AC terminal of the control board 6, thereby enabling signal transmission with the control board 6. A receiving cylinder 51 protrudes from the lower surface of the control box 5 to house the protruding sensing portion of the current sensor 7. Meanwhile, a low-inductance busbar 19 is installed within the power box 15. A bent plate-shaped AC connector 191 is installed at the AC terminal of the low-inductance busbar 19. A detection hole 192 is provided on the horizontal surface of the AC connector 191. During installation, the sensing part of the current sensor 7 is inserted into the receiving cylinder 51, which extends downwards through the top plate 20 of the power box and is inserted into the detection hole 192 to detect and sense the electromagnetic field environment within the detection hole 192, thereby achieving current measurement. Preferably, the connection between the receiving cylinder 51, the power box 15, and the detection hole 192 can be plug-in. Thus, the power assembly 1 and the control assembly 2 can be installed with complete quick plug-in and plug-out.

[0043] The control box 5 includes a control box base plate 52, control box side plates 53, and a control box top plate 10. The control box side plates 53 are mounted on the control box base plate 52 and are cylindrical in shape, for example, a cylindrical shape with a generally square cross-section. The control box top plate 10 covers the control box side plates 53. This structure of the control box 5 facilitates manufacturing and provides good insulation, dustproofing, and safety protection for the internal control boards 6, etc. Ventilation holes 531 are provided on the two opposing control box side plates 53 located at the non-DC and non-AC ends, and on the control box top plate 10, to improve heat dissipation and extend service life. The specific shape, size, and number of ventilation holes 531 can be set as needed. It should also be noted that while the outer side of the entire semiconductor device is generally square, for optimized component layout, protruding portions extending squarely to both ends can be provided at both the AC and DC ends, ultimately forming a shape like... Figure 4 and 5 The semiconductor device in the package shown is an overall assembly. For this reason, for example, the control box top plate 10 and the like also need to be provided with corresponding protruding parts.

[0044] A notch 532 is provided at the AC terminal of the control box side panel 53 so that the external interface 8 provided on the control board 6 can be exposed, such as... Figure 5As shown. External interface 8 includes electrical and optical signals, used to acquire control power and transmit control, fault, and other signals to the upper control unit. The centralized arrangement of electrical and optical signals facilitates the external low-voltage wiring of this invention and the modular and high / low voltage partitioning design within the intelligent drive control board 6.

[0045] The power assembly 2 also includes a substrate 12 with IGBT semiconductor chips disposed within the power box 15, a circuit board 17 disposed on the substrate 12, and copper busbar terminals 13 disposed on the substrate 12. A low-inductance busbar 19 is disposed on the circuit board 17. The copper busbar terminals 13 extend upward to connect to the low-inductance busbar 19, thereby enabling power transmission. For example, to achieve the connection between the copper busbar terminals 13 and the low-inductance busbar 19, clearance holes 171 can be provided on the circuit board 17 for clearance. The copper busbar terminals 13 themselves can be designed as strip plates, with a protrusion 131 designed at one end of the adjustment plate to achieve a plug-in connection with the low-inductance busbar 19.

[0046] Insertable signal leads 14 are provided on the substrate 12 for upward insertion onto the circuit board 17 and fixed by means such as soldering. This arrangement introduces control signals from multiple substrates 12 into the circuit board 17, which are then rationally arranged and converged to the control signal connector 18. The control signal connector 18 is then plugged into the auxiliary pole signal connector 4 corresponding to the control component 1, thereby enabling the intelligent drive control board 6 to control the power component 2. In the field of high-voltage power electronics, this connection method can reduce signal transmission distance, ensure the reliability of control signal transmission, improve the structural strength and insulation of the connection, and concentrate all critical control signals on one side for processing, which is beneficial for high and low voltage partition design, further facilitating modular design and layered rapid assembly.

[0047] The power assembly 2 also includes a heat sink 11, a power box side plate 151 disposed on the upper surface of the heat sink 11, and a power box top plate 20 covering the power box side plate 151. The power box side plate 151 forms a wall-like structure to form a power box 15 with the upper surface of the heat sink 11 and the power box top plate 20. Furthermore, the substrate 12 is directly soldered to the upper surface of the heat sink 11. This arrangement eliminates the need for a substrate required in conventional IGBT devices, reducing thermal resistance and improving heat dissipation performance, while also reducing the size and weight of the semiconductor device.

[0048] The low-inductance busbar 19 includes positive DC, negative DC, and AC copper plates, as well as an insulating layer. The cooling connector 21 of the radiator 11 is located at the DC end and is configured as a plug-in type, which enables the present invention to achieve a quick plug-in connection of water and electricity during installation, making it extremely convenient to use.

[0049] An insulating block 23 is provided between the DC positive interface 193 and the DC negative interface 194 of the low-inductance bus 19. Furthermore, the insulating block 23 is integrally constructed with the low-inductance bus 19. That is, the low-inductance bus 19 itself serves as a modular component, which helps improve the integration of the semiconductor device and reduces assembly difficulty. The insulating block 23, together with the DC positive interface 193 and the DC negative interface 194, is constructed as a strip-shaped pluggable type. By providing the insulating block 23, reliable insulation is ensured within the low-inductance bus 19 itself, facilitating modular design. Additionally, when potting the substrate 12 and other components within the power box 15, the above solution eliminates the need for the low-inductance bus 19 to be completely immersed in the insulating adhesive. Therefore, this arrangement reduces the risk of contamination during manufacturing and lowers the size and weight.

[0050] In addition, the water and electricity integrated connector of the radiator 11 is designed with a positioning pin hole 22 for guiding and positioning the power component 2 during installation, so as to avoid damage to the interface and prevent incorrect insertion. An insulating protective sleeve is provided at the DC end of the power box 15. The insulating protective sleeve is composed of a first grooved plate 201 and a second grooved plate 152 that are mated together. Preferably, the first grooved plate 201 is provided at the DC end of the top plate 20 of the power box. The second grooved plate 152 is provided at the DC end of the side plate 151 of the power box, so as to be connected to the first grooved plate 201 in a relative manner, thereby forming a receiving space for accommodating the DC end interfaces 194 and 193, such as... Figure 5 As shown, this strengthens external insulation and provides a certain degree of protection. Of course, the positions of the first grooved plate 201 and the second grooved plate 152 can be changed according to actual conditions and are not limited to... Figure 5 The position in the middle.

[0051] exist Figure 6 The diagram shows the main circuit of the semiconductor device. This single-phase half-bridge main circuit has a wide range of applications, strong versatility and interchangeability, and can flexibly realize the parallel connection of multiple modules, or be combined for use as a rectifier, inverter, or inverter + chopper. This application achieves high integration of IGBT devices and integrates them with converter module technology, using IGBT device-level technology to realize the phase module function.

[0052] Although the invention has been described with reference to preferred embodiments, various modifications can be made and components can be replaced with equivalents without departing from the scope of the invention. In particular, the technical features mentioned in the various embodiments can be combined in any manner as long as there is no structural conflict. The invention is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A semiconductor device, characterized by comprising: Comprise: Modular control assembly, the control assembly has control box, control board arranged in the control box, auxiliary pole signal connector arranged on the control board and temperature sensor signal connector arranged on the control board, Modular power assembly oppositely arranged at the lower end of the control assembly, the power assembly has power box, control signal connector arranged in the power box and temperature sensor connector arranged in the power box, Wherein, the control signal connector and the temperature sensor connector are open at the corresponding positions of the power box, so that the auxiliary pole signal connector and the temperature sensor signal connector extend out of the control box and are plug-in connected with the control signal connector and the temperature sensor connector respectively; On the control board, the auxiliary pole signal connector and the temperature sensor signal connector are arranged at both ends of the control board respectively; Current sensor is arranged at the alternating current end of the inner cavity of the control box, the current sensor is connected with the socket signal arranged at the alternating current end of the control board, at the same time, low inductance busbar is arranged in the power box, the alternating current end of the low inductance busbar is provided with a bent plate-shaped alternating current connector, a detection hole is arranged on the horizontal surface of the alternating current connector, the lower end of the control box is provided with a containing cylinder for containing the inductive end of the current sensor, the containing cylinder can protrude out of the control box and extend into the power box and be inserted into the detection hole; The control box comprises: Control box bottom plate, Control box side plate arranged on the control box bottom plate, which forms a cylindrical shape, Control box top plate covering the control box side plate, Wherein, ventilation holes are arranged on the control box side plate and the control box top plate, and an opening is arranged at the alternating current end of the control box side plate to expose the external interface arranged on the control board.

2. The semiconductor device according to claim 1, wherein The power assembly further comprises: Liner plate with IGBT semiconductor chip arranged in the power box, Circuit board arranged above the liner plate, which can be signal connected with the IGBT semiconductor chip of the liner plate, Copper bar terminal arranged on the liner plate, Wherein, the low inductance busbar is arranged above the circuit board, and the copper bar terminal extends upwards through the circuit board to connect the low inductance busbar.

3. The semiconductor device according to claim 2, wherein Pin-type signal lead is arranged on the liner plate to be inserted upwards into the circuit board to realize connection.

4. The semiconductor device according to claim 3, wherein The power assembly further comprises: Radiator, Power box side plate arranged on the upper surface of the radiator, which forms a cylindrical shape, Power box top plate covering the power box side plate to form the power box with the power box side plate and the upper surface of the radiator, Wherein, the liner plate is directly welded on the upper surface of the radiator.

5. The semiconductor device according to claim 4, wherein The cooling joint of the radiator is located at the direct current end and is configured as plug-in type.

6. The semiconductor device according to claim 5, wherein Insulating block is arranged between the direct current positive interface and the direct current negative interface of the low inductance busbar, and the insulating block and the direct current positive interface and the direct current negative interface are collectively configured as a strip-shaped plug-in type.

7. The semiconductor device according to claim 6, wherein An insulating protective sleeve is arranged at the position where the power box is located at the DC end, and the insulating protective sleeve is composed of a first slot-shaped plate and a second slot-shaped plate which are mutually butted.

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