Method of manufacturing an optoelectronic device and optoelectronic device

Abstract

Method for producing an optoelectronic component (1), having the following steps: A) providing a plurality of radiation-emitting semiconductor chips (2) which are arranged to emit primary radiation in a first wavelength range during operation, B) applying a converter (3) which is arranged to emit secondary radiation in a second wavelength range to the plurality of radiation-emitting semiconductor chips (2), C) applying a mirror layer sequence (4) which is arranged to reflect the primary radiation and to transmit the secondary radiation, wherein the mirror layer sequence (4) is arranged downstream of the converter (3), D) separating the plurality of radiation-emitting semiconductor chips (2) to produce the optoelectronic component (1). Furthermore, an optoelectronic component (1) produced by the method is described.

Description

Technical Field

[0001] A method for manufacturing optoelectronic devices is described. Furthermore, an optoelectronic device is also described. Summary of the Invention

[0002] The task at hand is to describe a method for manufacturing optoelectronic devices with improved characteristics. Furthermore, an optoelectronic device with improved characteristics should also be described.

[0003] Optoelectronic devices may have at least one semiconductor chip that emits electromagnetic radiation within a specific wavelength range.

[0004] For example, the optoelectronic device is a semiconductor laser device or a light-emitting diode.

[0005] According to one embodiment of a method for manufacturing optoelectronic devices, a plurality of semiconductor chips emitting radiation are provided, the plurality of semiconductor chips being configured to emit primary radiation in a first wavelength range during operation.

[0006] Preferably, each of the plurality of emitting semiconductor chips emits primary radiation in a first wavelength range from its radiation emitting surface. In particular, the plurality of emitting semiconductor chips emit primary radiation from the ultraviolet spectral range and / or from the visible spectral range, particularly preferably from the blue spectral range, during operation.

[0007] The plurality of emitting semiconductor chips are, for example, a plurality of light-emitting diode chips or a plurality of laser diode chips. The plurality of emitting semiconductor chips preferably have an epitaxially grown sequence of semiconductor layers, the sequence of semiconductor layers having active regions configured to generate primary radiation. For this purpose, the active regions have, for example, pn junctions, double heterostructures, single quantum well structures, or particularly preferably multiple quantum well structures.

[0008] For example, the semiconductor chips are arranged on an auxiliary carrier at a specific, pre-defined spacing.

[0009] According to at least one embodiment of the method, a transducer configured to emit secondary radiation in a second wavelength range is applied to the plurality of emitting semiconductor chips. The transducer has, for example, a luminescent material and a matrix. The matrix is ​​preferably configured to be permeable to or clearly transparent to electromagnetic radiation such as visible light. The transducer preferably converts primary radiation from the plurality of emitting semiconductor chips into secondary radiation. The transducer is preferably applied as a coherent layer to the plurality of emitting semiconductor chips.

[0010] The luminescent material is introduced into the matrix in the form of luminescent material particles. In this case, the matrix preferably completely surrounds the luminescent material particles, i.e., the luminescent material particles are preferably embedded in the matrix. During operation, the luminescent material particles convert primary radiation in a first wavelength range into secondary radiation in a second wavelength range. The primary radiation is preferably different from the secondary radiation. The luminescent material particles embedded in the matrix preferably impart wavelength conversion characteristics to the conversion element. For example, a conversion element with luminescent material particles only partially converts the primary radiation of the semiconductor chip into secondary radiation, while another portion of the primary radiation of the semiconductor chip is transmitted by the conversion element.

[0011] The luminescent material is, for example, a ceramic luminescent material and / or a quantum dot luminescent material. The ceramic luminescent material preferably has a garnet luminescent material. Particularly preferred is the garnet luminescent material having the chemical formula Y3Al5O. 12 :Ce 3+ YAG luminescent materials or those with the chemical formula Lu3Al5O 12 :Ce 3+ LuAG luminescent material.

[0012] Furthermore, ceramic luminescent materials can also be nitride luminescent materials. Nitride luminescent materials preferably convert blue primary radiation into red secondary radiation. Nitride luminescent materials can be, for example, alkaline earth metal silicon nitride, oxynitride, aluminum oxynitride, silicon nitride, or silane. For example, a nitride luminescent material is (Ca,Sr,Ba)AlSiN3:Eu 2+ (CASN), Sr(Ca,Sr)Al2Si2N6:Eu 2+ (SCASN) or M2Si5N8:Eu 2+ , where M = Ca, Ba or Sr alone or in combination.

[0013] Other possible materials for luminescent materials include, in particular, the following luminescent material particles containing aluminum and / or silicon:

[0014] (Ba 1-x-y Sr x Ca y SiO4:Eu 2+ (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), (Ba 1-x-y Sr x Ca y )3SiO5:Eu 2 + (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), Li2SrSiO4:Eu 2+ Ca8Mg(SiO4)4Cl2:Eu 2+ Oxynitrile compounds such as (Ba1-x-y Sr x Ca y Si2O2N2:Eu 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), SrSiAl2O3N2:Eu 2+ Ba 4- x Ca x Si6ON 10 Eu 2+ (0 ≤ x ≤ 1), (Ba 1-x Sr x Y2Si2Al2O2N5:Eu 2+ (0 ≤ x ≤ 1), Sr x Si (6-y) Al y O y N (8-y) Eu 2+ (0.05 ≤ x ≤ 0.5; 0.001 ≤ y ≤ 0.5), Ba3Si6O 12 N2:Eu 2+ Si 6- z Al z O z N 8-z Eu 2+ (0 ≤ z ≤ 0.42), M x Si 12-m-n Al m+n O n N 16-n Eu 2+ (M = Li, Mg, Ca, Y; x = m / v; v = valence of M, x ≤ 2) x Si 12-m-n Al m+n O n N 16-n :Ce 3+ AE 2-x-a RE x Eu a Si 1-y O 4-x-2y N x (AE = Sr, Ba, Ca, Mg; RE = rare earth elements) 2-x-a RE x Eu a Si 1-y O 4-x-2y N x(AE = Sr, Ba, Ca, Mg; RE = rare earth elements), Ba3Si6O 12 N2:Eu 2+ Or nitrides such as La3Si6N 11 :Ce 3+ 、(Ba 1-x-y Sr x Ca y )2Si5N8:Eu 2+ 、(Ca 1-x-y Sr x Ba y AlSiN3:Eu 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), Sr(Sr 1-x Ca x Al2Si2N6:Eu 2+ (0≤ x ≤ 0.2), Sr(Sr 1-x Ca x Al2Si2N6:Ce 3+ (0 ≤ x ≤ 0.2) SrAlSi4N7:Eu 2+ 、(Ba 1-x- y Sr x Ca y SiN2:Eu 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1), (Ba 1-x-y Sr x Ca y SiN2:Ce 3+ (0 ≤ x ≤1; 0 ≤ y ≤ 1), (Sr 1-x Ca x LiAl3N4:Eu 2+ (0 ≤ x ≤ 1), (Ba 1-x-y Sr x Ca y )Mg2Al2N4:Eu 2+ (0≤ x ≤ 1; 0 ≤ y ≤ 1), (Ba 1-x-y Sr x Ca y )Mg3SiN4:Eu 2+ (0 ≤ x ≤ 1; 0 ≤ y ≤ 1).

[0015] For example, it is possible to combine multiple different luminescent material particles.

[0016] According to at least one embodiment, a mirror layer sequence is applied, the mirror layer sequence being configured to reflect primary radiation and transmit secondary radiation, wherein the mirror layer sequence is disposed downstream of the transducer. The mirror layer sequence is applied to the transducer, particularly as a whole surface. For example, the mirror layer sequence is applied to the transducer as a continuous layer.

[0017] The mirror sequence is specifically configured to reflect most of the primary radiation from the semiconductor chip and transmit most of the secondary radiation from the converter. That is, at least 50% of the primary radiation is reflected, and at least 50% of the secondary radiation is transmitted by the converter. Specifically, at least 80% of the primary radiation is reflected by the mirror sequence, and at least 80% of the secondary radiation is transmitted. This results in the primary radiation being reflected until it is converted into secondary radiation by the converter and thus no longer reflected by the mirror sequence and emitted as secondary radiation. Therefore, the optical coupling output efficiency of the secondary radiation can be improved.

[0018] A mirror layer sequence is, for example, a DBR (distributed Bragg reflector) layer sequence. A mirror layer sequence, for example, has a periodic stack of alternating first and second layers, the first layer being made of a first dielectric material having a first refractive index n1, and the second layer being made of a second dielectric material having a second refractive index n2. The first refractive index n1 and the second refractive index n2 advantageously have as large a difference as possible to achieve the highest possible reflectivity. Other alternating layers with other refractive indices are possible.

[0019] The layer thicknesses of the first and second layers in this layer pair are set in the layer sequence such that the optical layer thickness n*d is equal to one-quarter wavelength λ / 4 of the primary wavelength λ that the mirror sequence should have its maximum reflection. Here and in the following text, the optical layer thickness should be understood as the product of thickness d and refractive index n. The material of the mirror sequence is, for example, silicon dioxide. Here, the refractive index n1 is approximately 1.5. Another preferred material is titanium dioxide, aluminum oxide, or niobium oxide, particularly TiO2, Al2O3, or Nb2O5. Titanium oxide advantageously has a relatively high refractive index, which is approximately n2 = 2.5. Due to the relatively large difference in refractive index between silicon dioxide and titanium oxide, this material pairing is particularly suitable for achieving high reflectivity in the wavelength range of primary radiation. The mirror sequence is characterized particularly by high reflectivity in a very small wavelength range of the spectrum, such as high reflectivity of primary radiation.

[0020] According to at least one embodiment, the plurality of emitting semiconductor chips are separated to produce an optoelectronic device. This specifically means the separation of the transducer and the mirror sequence. The separation is performed, for example, by sawing, etching, grooving, undercutting, scribing, breaking, or by laser cutting. Care is taken during separation not to damage the emitting semiconductor chips, so that each emitting semiconductor chip, together with a portion of the transducer and a portion of the mirror sequence, forms an optoelectronic device.

[0021] According to at least one embodiment of a method for manufacturing an optoelectronic device, a plurality of semiconductor chips emitting radiation are provided, the semiconductor chips being configured to emit primary radiation in a first wavelength range during operation. A transducer configured to emit secondary radiation in a second wavelength range is then applied to the plurality of emitting semiconductor chips. A mirror sequence is applied, the mirror sequence being configured to reflect the primary radiation and transmit the secondary radiation, wherein the mirror sequence is disposed downstream of the transducer, and the plurality of emitting semiconductor chips are separated to produce an optoelectronic device.

[0022] According to at least one embodiment, the method for manufacturing an optoelectronic device is performed in the aforementioned sequence.

[0023] One idea for manufacturing optoelectronic devices is to apply a converter and mirror sequence to multiple emitting semiconductor chips, thereby providing a cost-effective and simplified method for manufacturing optoelectronic devices.

[0024] According to at least one embodiment, the plurality of semiconductor chips emitting radiation are provided in a wafer composite. The wafer, for example, is fully equipped with 1mm... 2 A 6'' wafer with large emission radiation semiconductor chips. Providing multiple emission radiation semiconductor chips in a wafer complex leads to cost advantages and improved process speed.

[0025] According to at least one embodiment, the converter is applied to the plurality of emitting semiconductor chips by means of spraying. This assumes that the converter is in an uncured state at the time of application to the plurality of emitting semiconductor chips. The converter, for example, has a matrix and a large number of luminescent material particles or consists of a layer of luminescent material particles. The matrix is, for example, silicone resin, epoxy resin, or a mixture of materials. The luminescent material particles are, for example, ceramic luminescent material particles and / or quantum dots. Spraying is performed in 1 to 3 layers. For example, a converter with luminescent material YAG is applied to the plurality of emitting semiconductor chips by means of a single spray layer. Due to the small number of spray layers, the manufacturing speed is increased and the production cost is minimized.

[0026] According to at least one embodiment, the mirror layer sequence is applied to the converter by means of sputtering, atomic layer deposition, and / or plasma-enhanced vapor deposition. The mirror layer sequence can be applied to the converter at room temperature. The converter is particularly present in a cured state. If the converter is present in a cured state, an adhesive layer is also unnecessary because the bonding force between the converter matrix and the mirror layer sequence is sufficient.

[0027] According to at least one embodiment, the mirror layer sequence is applied directly to the converter. That is, there are no other layers in the converter and the mirror layer sequence.

[0028] For example, when the mirror sequence is applied, the converter's matrix exists in an uncured state. Therefore, the mirror sequence binds to the matrix. This is achieved by the fact that the uncured matrix has adhesive properties, thus allowing the mirror sequence to preferentially bind to the matrix.

[0029] According to at least one embodiment, the mirror layer sequence is applied to a carrier, and the carrier is disposed downstream of the converter, such that the mirror layer sequence is disposed between the converter and the carrier. The carrier is preferably transparent to electromagnetic radiation. Furthermore, the carrier preferably has glass as its material. The mirror layer sequence is specifically vapor-deposited onto the carrier, and then the thickness of the carrier is reduced to less than 200 micrometers. The mirror layer sequence is disposed on the converter such that it is disposed between the converter and the carrier. Specifically, no adhesive layer is disposed between the carrier and the mirror layer sequence. Furthermore, specifically, no adhesive layer is disposed between the converter and the mirror layer sequence. The converter initially exists in an uncured state. This bonding is achieved through curing. Therefore, efficiency and robustness are improved.

[0030] According to at least one embodiment, the converter is cured after the mirror sequence is applied. Therefore, a smooth surface of the converter in contact with the mirror sequence can be achieved, in particular. By curing the converter after the mirror sequence is applied, the adhesion of the mirror sequence to the converter is advantageously improved. Furthermore, the adhesion of foreign particles to the device surface is reduced, and the encapsulation for isolating the environment is improved compared to a sticky, cured matrix surface. Additionally, lower permeability is achieved.

[0031] An optoelectronic device is also described. In particular, the optoelectronic device described herein can be manufactured using the methods described for manufacturing optoelectronic devices. This means that all features disclosed for the methods for manufacturing optoelectronic devices are also disclosed for the optoelectronic devices and vice versa.

[0032] According to at least one embodiment, the optoelectronic device has a semiconductor chip that emits radiation, the semiconductor chip emitting primary radiation in a first wavelength range during operation. The semiconductor chip emitting the radiation has a radiation exit surface.

[0033] Semiconductor chips are, for example, light-emitting diode (LED) chips or laser diode chips. Preferably, the semiconductor chip has an epitaxially grown sequence of semiconductor layers having active regions configured to generate electromagnetic radiation. For this purpose, the active regions may have, for example, pn junctions, double heterostructures, single quantum well structures, or, particularly preferably, multiple quantum well structures. Preferably, the semiconductor chip emits electromagnetic radiation from the ultraviolet spectral range and / or from the visible spectral range, particularly preferably from the blue spectral range, during operation.

[0034] According to at least one embodiment, the optoelectronic device has a conversion element configured to emit secondary radiation in a second wavelength range. The conversion element preferably converts primary radiation from a semiconductor chip emitting radiation into secondary radiation. The conversion element is generated, for example, by separating it from a converter described with respect to the method. Specifically, the conversion element is arranged on the radiation exit surface of the semiconductor chip emitting radiation.

[0035] According to at least one embodiment, the optoelectronic device has a dielectric mirror. The dielectric mirror is produced, for example, by separating it from a mirror layer sequence described for the method.

[0036] According to at least one embodiment, the dielectric mirror is configured to reflect the primary radiation and transmit the secondary radiation.

[0037] According to at least one embodiment, the dielectric mirror is disposed downstream of the semiconductor chip. Preferably, the dielectric mirror is disposed on the conversion element.

[0038] According to at least one embodiment, the dielectric mirror and the conversion element have traces of the separation process on their sides. That is, the conversion element, the semiconductor chip, and the dielectric mirror are arranged in a stacked configuration covering the entire surface. These traces of the separation process are created, for example, by sawing, etching, scribing, breaking, or laser cutting. The traces are, for example, grooves, rough areas, or undercuts.

[0039] According to at least one embodiment, the optoelectronic device includes a semiconductor chip that emits radiation, the semiconductor chip emitting primary radiation in a first wavelength range during operation; a conversion element configured to emit secondary radiation in a second wavelength range; and a dielectric mirror configured to reflect the primary radiation and transmit the secondary radiation. The dielectric mirror is disposed downstream of the semiconductor chip, and traces of a separation process are present on the sides of the dielectric mirror and the conversion element.

[0040] According to at least one embodiment, the conversion element has a matrix material and a luminescent material. The matrix material is produced, for example, by separating it from a matrix described for the method. The matrix material is in a cured state and is selected from the group consisting of silicone resins, epoxides, and mixed materials.

[0041] According to at least one embodiment, the secondary radiation of the conversion element is red light. The luminescent material that converts the primary radiation of the semiconductor chip into secondary radiation is, for example, a CASN luminescent material. CASN luminescent materials belong to the group of nitride luminescent materials and have the following formula: (Ca,Sr,Ba)AlSiN3:EU 2+ Compared to optoelectronic devices that emit red light without a dielectric mirror, the optoelectronic devices described herein have improved efficiency and advantageously have a smaller number of coating layers.

[0042] According to at least one embodiment, the optoelectronic device primarily emits secondary radiation during operation. Specifically, the optoelectronic device emits only secondary radiation. That is, the optoelectronic device preferably emits almost entirely red light secondary radiation. Complete conversion of red light is shown here. Complete conversion occurs starting at a color purity of 70% or higher. Preferably, complete conversion of red light begins at a color purity of 80% or higher. Particularly preferably, complete conversion of red light begins at a color purity of 92% or higher. Color purity refers to the relative distance between the chromaticity coordinates and the white point and the spectral line or violet boundary in the CIE standard color system. A straight line originating from the white point and passing through the chromaticity coordinates intersects the spectral line or violet boundary. A first distance lies between the white point and the chromaticity coordinates, while a second distance lies between the white point and the intersection with the spectral line or violet boundary. Color purity is derived from the ratio of the first distance to the second distance. Complete conversion advantageously improves the efficiency and brightness of the optoelectronic device.

[0043] According to at least one embodiment, the integral of the emission peak is derived from at least 95% of the secondary radiation and at most 5% of the primary radiation emitted by the optoelectronic device.

[0044] According to at least one embodiment, the chromaticity coordinates of the radiation emitted by the optoelectronic device are located in a color square with corner points at coordinates (0.655, 0.337), (0.658, 0.337), (0.655, 0.339), and (0.658, 0.339) in the xy-CIE standard color system. This corresponds to the optoelectronic device emitting red light.

[0045] According to at least one embodiment, the conversion element is disposed downstream of the semiconductor chip and between the semiconductor chip and the dielectric mirror. The conversion element is in direct contact with both the semiconductor chip and the dielectric mirror. Furthermore, the conversion element is disposed entirely above the semiconductor chip. In particular, the conversion element and / or the dielectric mirror have a smooth surface on the side facing away from the semiconductor chip.

[0046] According to at least one embodiment, the conversion element is constructed as a layer and has a thickness between at least 50 micrometers and at most 100 micrometers. The conversion element preferably has a thickness of at least 50 micrometers and at most 70 micrometers. Compared to optoelectronic devices without a dielectric mirror, the conversion element is constructed to be particularly thin. This is because the dielectric mirror continuously reflects primary radiation until the primary radiation is converted into secondary radiation by the conversion element and transmitted through the dielectric layer.

[0047] According to at least one embodiment, the dielectric mirror has a thickness of up to 10 micrometers. Preferably, the dielectric mirror has a thickness of up to 8 micrometers.

[0048] According to at least one embodiment, the dielectric mirror has multiple layers, each with a different refractive index. The dielectric mirror comprises a periodic sequence of multiple layers with different refractive indices. Furthermore, the dielectric mirror is particularly characterized by high reflectivity over a very small wavelength range of the spectrum, preferably within the wavelength range of primary radiation.

[0049] According to at least one embodiment, a carrier element is arranged on the dielectric mirror. The carrier element is, for example, a glass carrier. The thickness of the carrier element is preferably at most 200 micrometers. Thicker carrier elements are also possible, but have disadvantages in terms of efficiency. Advantageously, no adhesive layer is required between the dielectric mirror and the carrier element. The carrier element is produced, for example, by separating it from a carrier described for the method.

[0050] One idea behind this optoelectronic device is to generate light of any color chosen, because it removes the limitations of the sintering process of ceramics, especially in the case of red light.

[0051] Furthermore, no adhesive layer is required between the conversion element and the dielectric mirror. Using optoelectronic devices without an adhesive layer between the conversion element and the dielectric mirror advantageously leads to improved efficiency and robustness.

[0052] Furthermore, the optoelectronic devices can be processed at the wafer level, resulting in advantages in both cost and processing speed.

[0053] Furthermore, the surface quality of the conversion element is improved by applying a dielectric microscope together with the carrier element, in order to make the surface smooth and reduce the adhesion of foreign particles to the carrier element surface.

[0054] Compared to optoelectronic devices without a dielectric microscope, the optoelectronic devices described herein have thinner conversion elements due to lower luminescent material concentration. This advantageously leads to higher efficiency and improved thermal behavior due to lower reabsorption and scattering. This, in turn, results in improved robustness and improved quenching behavior.

[0055] Furthermore, fewer spray coatings are required when applying the converter. Therefore, this is more cost-effective and improves processing speed.

[0056] Furthermore, a more compact design can be achieved through thinner switching elements.

[0057] Another advantage is that, compared to optoelectronic devices without a dielectric layer, complete conversion offers a brightness advantage at the same chromaticity coordinates.

[0058] Methods for manufacturing optoelectronic devices and other advantageous embodiments and extensions of optoelectronic devices are derived from the following embodiments described in conjunction with the accompanying drawings. Attached Figure Description

[0059] Figure 1 and Figure 2 Schematic cross-sectional views of different process stages of a method for manufacturing an optoelectronic device according to an embodiment are shown.

[0060] Figure 3 A cross-section of an optical micrograph showing a comparative example of an optoelectronic device is shown.

[0061] Figure 4 A cross-section of an optical micrograph of an optoelectronic device according to an embodiment is shown.

[0062] Figure 5 A schematic cross-sectional view of a comparative example of an optoelectronic device according to an embodiment is shown, along with a schematic cross-sectional view of the optoelectronic device itself.

[0063] Figure 6 This shows a portion of the xy-CIE standard color system.

[0064] Figure 7 Comparative examples of optoelectronic devices according to embodiments and a comparison of the luminous flux of the optoelectronic devices at 350mA and 1A are shown.

[0065] Figure 8 The illustration shows the illustrative dependence of brightness on color purity of a comparative example of an optoelectronic device according to an embodiment, and the illustrative dependence of brightness on color purity of an optoelectronic device.

[0066] Elements that are identical, of the same type, or have the same function are indicated by the same reference numerals in the figures. The dimensional relationships of the elements shown in the figures should not be considered as drawn to scale. Rather, for better representation and / or better understanding, individual elements, especially layer thicknesses, may be exaggerated. Detailed Implementation

[0067] According to Figure 1 In the method for manufacturing an optoelectronic device 1 according to an embodiment, a plurality of semiconductor chips 2 emitting radiation are provided in a first step. These semiconductor chips are configured to emit primary radiation within a first wavelength range during operation. A plurality of semiconductor chips 2 emitting radiation are provided in a wafer composite 12. The wafer composite 12 is fully equipped with 1mm... 2 A 6-inch wafer complex of semiconductor chip 2 with large emission radiation.

[0068] In the next step, a transducer 3, configured to emit secondary radiation in the second wavelength range, is applied to multiple emitting semiconductor chips 2. The transducer 3 is applied to the entire surface of the multiple emitting semiconductor chips 2. This continues within the wafer composite 12. The surface of the transducer 3 facing away from the multiple semiconductor chips 2 is non-uniform. The transducer 3 is applied to the multiple emitting semiconductor chips 2 in one to three spray coatings.

[0069] The converter 3 has a matrix and a luminescent material. The luminescent material preferably exists as luminescent material particles. The converter 3 preferably has red luminescent material particles. The matrix is, for example, silicone resin, a mixed material, or an epoxide and is not cured in this step.

[0070] In a further step, a mirror sequence 4 is applied, which is configured to reflect primary radiation and transmit secondary radiation. The mirror sequence 4 is disposed downstream of the converter 3. The mirror sequence 4 is disposed entirely on the converter 3. The mirror sequence 4 is applied to the converter 3 by means of sputtering, atomic layer deposition, and / or plasma-enhanced vapor deposition. In this case, the mirror sequence 4 is applied directly to the converter 3. The mirror sequence 4 also has a non-uniform top surface.

[0071] Converter 3 is cured after applying mirror sequence 4.

[0072] Then, multiple emitting semiconductor chips 2, converters 3, and mirror sequence 4 are separated to produce optoelectronic device 1. In this case, it is preferable to saw along the edge of the semiconductor chip 2 without damaging the semiconductor chip 2 in the process.

[0073] exist Figure 2In this embodiment, a plurality of emitting semiconductor chips 2 are also provided in the first step. These semiconductor chips are configured to emit primary radiation in a first wavelength range during operation. The plurality of emitting semiconductor chips 2 are housed within a wafer composite 12. The wafer composite 12 is fully equipped with a 1mm... 2 2. Semiconductor chips that emit large amounts of radiation.

[0074] The converter 3, configured to emit secondary radiation in the second wavelength range, is then applied to a plurality of emitting semiconductor chips 2. This is also done in this case by means of spraying. The converter 3 has a matrix and a luminescent material, wherein the luminescent material is preferably introduced into the matrix as luminescent material particles. The matrix is, for example, silicone resin, a mixed material, or an epoxide and is not cured in this step.

[0075] In the next step, the mirror sequence 4 is vapor-deposited onto a carrier 5, which is positioned downstream of the converter 3, such that the mirror sequence 4 is positioned between the converter 3 and the carrier 5. The carrier 5 is, for example, made of glass. The mirror sequence 4 is vapor-deposited onto the carrier 5, for example, at room temperature, and then the carrier 5 and the mirror sequence 4 are thinned to a thickness of up to 200 micrometers. After the mirror sequence 4 and the carrier 5 are applied to the converter 3, the converter 3 is cured to form a smooth surface and to firmly attach the mirror sequence 4 to the converter 3. The smooth surface of the converter 3 is located on the side facing away from the semiconductor chip 2. Then, multiple semiconductor chips 2, converter 3, mirror sequence 4, and carrier 5 are separated to produce the optoelectronic device 1.

[0076] In Comparative Example 11 of Optoelectronic Devices Figure 3 The optical micrograph shows a conversion element 6 applied to a semiconductor chip 2 that emits radiation by spraying. Comparative Example 11 is disposed on a surface 13 having electrical contacts. Comparative Example 11 does not have a dielectric microscope 7. Spraying is performed in at least six layers. Furthermore, the conversion element 6 is disposed directly on the semiconductor chip 2. The conversion element 6 has a thickness of approximately 150 micrometers. The luminescent material of the conversion element 6 is a red-emitting luminescent material.

[0077] Figure 4 The optoelectronic device 1 is also shown in cross-section of an optical micrograph according to the embodiment. The optoelectronic device 1 is arranged on a surface 13 having electrical contacts. In this case, a conversion element 6 is applied to a semiconductor chip 2 that emits radiation. The conversion element 6 consists of a dielectric mirror 7 and a carrier element 10. The luminescent material in this case is a luminescent material in which the secondary radiation is red light. The conversion element 6 has a thickness of at least 50 micrometers and 65 micrometers. Specifically, the conversion element 6 has a thickness of approximately 56 micrometers. The dielectric mirror 7 has a thickness of at most 10 micrometers. The carrier element 10 has a thickness of at most 200 micrometers.

[0078] Figure 5 The diagram shows a comparison between two schematic cross-sectional views of optoelectronic devices 1 and 11. The schematic cross-sectional view on the left shows a comparative example of optoelectronic device 11, where the dielectric mirror 7 is not arranged on the conversion element 6.

[0079] The schematic cross-sectional view on the right side according to an embodiment shows a semiconductor chip 2 emitting radiation, a conversion element 6, and a dielectric mirror 7. During operation, the semiconductor chip 2 emits primary radiation in a first wavelength range, the conversion element 6 is configured to emit secondary radiation in a second wavelength range, and the dielectric mirror 7 is configured to reflect the primary radiation and transmit the secondary radiation. Furthermore, a carrier element 10 is located on the dielectric mirror 7. The carrier element 10 may be, for example, glass, and optionally may be omitted. The conversion element 6 has a light-emitting material 9, preferably light-emitting material particles, and a matrix material 8. The difference between the two figures lies in the thickness of the conversion element 6. In the optoelectronic device 1 described herein, the thickness of the conversion element 6 can be constructed to be particularly thin. Compared to Comparative Example 11, the thickness of the conversion element 6 can be reduced by up to more than 60%. This results in a reduction in cost.

[0080] Figure 6 The xy-CIE standard color system is illustrated exemplarily. In this case, CIE-y is plotted relative to CIE-x. When the same luminescent material is used in the conversion element 6 of optoelectronic devices 1 and 11, a comparative example of optoelectronic device 11 shows different chromaticity coordinates than that of optoelectronic device 1 described herein. The chromaticity coordinates of the radiation emitted by optoelectronic device 1 described herein are in color squares with vertices at coordinates (0.655, 0.337), (0.658, 0.337), (0.655, 0.339), and (0.658, 0.339). The chromaticity coordinates of comparative example 11 are shifted towards larger CIE-x values ​​and smaller CIE-y values.

[0081] Figure 7 The diagram shows a comparison between the optoelectronic devices 1a and 1b described herein and comparative examples 11a and 11b. A comparison of luminous flux at 350 mA and 1 A is shown here; 1a and 11a are measurements at 1 A, while 1b and 11b are measurements at 350 mA. Due to the thinner conversion element 6 and dielectric mirror 7, the optoelectronic device 1 described herein has approximately 36% higher luminous flux.

[0082] Figure 8 A comparative example of optoelectronic device 11 and the brightness Φ of optoelectronic device 1 described herein are shown. vDependence on color purity p. The comparative example of optoelectronic device 11, compared to optoelectronic device 1 described herein, has an increased conversion element or a higher concentration of luminescent or scattering particles. In the comparative example of optoelectronic device 11, this results in a non-negligible loss due to reabsorption. Compared to comparative example 11, optoelectronic device 1 described herein has almost no brightness Φ when color purity p is greater than 90%. v The loss. In the case of complete conversion, the color purity p is preferably greater than or equal to 92%.

[0083] The features and embodiments described in conjunction with the accompanying drawings can be combined with each other according to other embodiments, even if not all combinations are explicitly described. Furthermore, the embodiments described in conjunction with the accompanying drawings may alternatively or additionally have other features as described in the summary section of the invention.

[0084] The invention is not limited to the description based on the embodiments. Rather, the invention includes each new feature and each combination of features, particularly each combination of features in the claims, even if the feature or combination itself is not expressly stated in the claims or embodiments.

[0085] This patent application claims priority to German patent application DE 102020103070.3, the disclosure of which is incorporated herein by reference.

[0086] List of reference numerals

[0087] 1 Optoelectronic devices

[0088] 2 Semiconductor chips

[0089] 3 Converters

[0090] 4. Mirror layer sequence

[0091] 5. Carrier

[0092] 6. Conversion element

[0093] 7 Dielectric microscopy

[0094] 8. Matrix Materials

[0095] 9. Luminescent substances

[0096] 10 Carrier Components

[0097] 11 Comparative Examples of Optoelectronic Devices

[0098] 1a Optoelectronic device, luminous flux 1A

[0099] 1b Optoelectronic device, luminous flux 350mA

[0100] 11a Comparison example, luminous flux 1A

[0101] 11b Comparison example, luminous flux 350mA

[0102] 12-chip complex

[0103] 13 Surface

[0104] p Color purity

[0105] Ph brightness

Claims

1. A method for manufacturing an optoelectronic device (1), comprising the steps of: A) Provides a plurality of semiconductor chips (2) that emit radiation, said plurality of semiconductor chips that emit radiation are configured to emit primary radiation in a first wavelength range during operation. B) A converter (3) configured to emit secondary radiation in the second wavelength range is applied to the plurality of semiconductor chips (2) that emit radiation. C) Apply a mirror sequence (4) configured to reflect the primary radiation and transmit the secondary radiation, wherein the mirror sequence (4) is disposed downstream of the transducer (3), wherein the transducer (3) exists in an uncured state during the application of the mirror sequence (4). D) The converter (3) is cured after the mirror layer sequence (4) is applied. E) Separate the plurality of emitting semiconductor chips (2) to produce optoelectronic devices (1). The converter (3) is applied to the plurality of emitting semiconductor chips (2) by means of spraying, and The mirror layer sequence (4) is applied to the converter (3) by means of sputtering, atomic layer deposition and / or plasma-enhanced chemical vapor deposition (PECVD), wherein the mirror layer sequence (4) is applied directly to the converter (3) without the need to place an adhesive layer between the converter (3) and the mirror layer sequence (4).

2. The method of claim 1, wherein, The plurality of semiconductor chips (2) that emit radiation are provided in the wafer complex (12).

3. The method according to any one of claims 1 to 2, wherein, The mirror sequence (4) is applied to the carrier (5) and the carrier (5) is arranged downstream of the converter (3) such that the mirror sequence (4) is arranged between the converter (3) and the carrier (5).

4. The method according to any one of claims 1 to 2, wherein, The converter (3) is cured after the mirror layer sequence (4) is applied.

5. An optoelectronic device (1), having - A semiconductor chip (2) that emits radiation, which emits primary radiation in a first wavelength range during operation. -Conversion element (6), which is configured to emit secondary radiation in the second wavelength range, and - Dielectric microscope (7), where - The dielectric mirror (7) is configured to reflect the primary radiation and transmit the secondary radiation. - The dielectric mirror (7) is disposed downstream of the semiconductor chip (2), and - The sides of the dielectric mirror (7) and the conversion element (6) show traces of the separation process. The chromaticity coordinates of the radiation emitted by the aforementioned optoelectronic device are located in the range of red light with a color purity greater than or equal to 80%. The conversion element (6) is disposed downstream of the semiconductor chip (2) and between the semiconductor chip (2) and the dielectric mirror (7), without the need for an adhesive layer between the conversion element (6) and the dielectric mirror (7). The chromaticity coordinates of the radiation emitted by the optoelectronic device are located in the xy-CIE standard color system, with the corner points in the color squares at coordinates (0.655, 0.337), (0.658, 0.337), (0.655, 0.339), and (0.658, 0.339).

6. The optoelectronic device (1) according to claim 5, wherein, The conversion element (6) has a matrix material (8) and a luminescent material (9).

7. The optoelectronic device (1) according to any one of claims 5 to 6, wherein, The secondary radiation of the conversion element (6) is red light.

8. The optoelectronic device (1) according to any one of claims 5 to 6, wherein, The conversion element (6) is constructed as a layer and has a thickness between at least 50 micrometers and at most 100 micrometers.

9. The optoelectronic device (1) according to any one of claims 5 to 6, wherein, The dielectric mirror (7) has a thickness of up to 10 micrometers.

10. The optoelectronic device (1) according to any one of claims 5 to 6, wherein, The dielectric mirror (7) has multiple layers, each with a different refractive index.

11. The optoelectronic device (1) according to any one of claims 5 to 6, wherein, A carrier element (10) is arranged on the dielectric mirror (7).

Images