High speed, high efficiency sic power module

Abstract

The present application relates to high speed, high efficiency SiC power modules. A power converter module includes an active metal brazing (AMB) substrate, a power converter circuit, and an enclosure. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuit includes a plurality of silicon carbide switching components coupled to each other via the first conductive layer. The enclosure is disposed over the power converter circuit and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, thermal dissipation of the power converter module can be significantly improved while maintaining structural integrity of the power converter module.

Description

[0001] This application is a divisional application of the Chinese national phase application of PCT application filed on March 11, 2016, with international application number PCT / US2016 / 022031 and entitled "High-speed, high-efficiency SiC power module". The entire contents of the Chinese national phase application, which entered the Chinese national phase on October 31, 2017, with application number 201680025081.8, are incorporated herein by reference. Technical Field

[0002] This disclosure relates to power converter modules, and more particularly to high-frequency power converter modules utilizing silicon carbide (SiC) components. Background Technology

[0003] A power converter module (which may also include a power inverter module) is a separate device that performs various functions within a power converter system. For example, a power converter module may include a boost converter, a buck converter, a half-bridge converter, and a full-bridge converter. Conventional power converter modules typically include power converter circuits utilizing silicon (Si) switching components. While effective, in many applications, the use of power converter circuits with silicon (Si) switching components often limits the switching frequency at which the power converter circuit can operate. The lower the switching frequency of the components within the power converter circuit, the larger the filtering components, such as inductors and capacitors, required within the power converter system. Thus, the filtering components used with power converter circuits utilizing silicon (Si) switching components must be quite large, thereby increasing the cost of the power converter system. Furthermore, at high switching frequencies, silicon (Si) switching components are often associated with lower efficiency and lower power density. Summary of the Invention

[0004] This disclosure relates to power converter modules, and more particularly to high-frequency power converter modules utilizing silicon carbide (SiC) components. In one embodiment, the power converter module includes an active metal brazing (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite to the first surface. The power converter circuitry includes a plurality of silicon carbide switching components coupled to each other via the first conductive layer. The housing is disposed over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the heat dissipation of the power converter module can be significantly improved while maintaining the structural integrity of the power converter module.

[0005] In one embodiment, the first conductive layer is directly on the first surface of the aluminum nitride substrate, and the second conductive layer is directly on the second surface of the aluminum nitride substrate.

[0006] In one embodiment, a first conductive layer is etched to form a desired interconnect pattern between silicon carbide switching components. The silicon carbide switching components may be coupled to the first conductive layer via one or more bonding wires, such that the power switching path has a maximum length of approximately 50 mm and the gate control path has a maximum length of approximately 20 mm. By minimizing the power switching path length and the gate control path length, the stray inductance of the power converter module is reduced.

[0007] In one embodiment, the power converter circuit is a boost converter configured to receive a direct current (DC) input voltage and provide a boosted DC output voltage. The power converter circuit may include a silicon carbide metal-oxide-semiconductor field-effect transistor (MOSFET) coupled in series with a silicon carbide Schottky diode. Further, the power converter circuit may be configured to provide an output voltage greater than 650V, an output power greater than 900W, and operate at a switching frequency greater than 40kHz. The switching losses of the power converter circuit may be between 5mJ / A and 100mJ / A. The insulating substrate may have a minimum thermal conductivity of 30W / mK to provide low thermal resistance between the power converter circuit and the second conductive layer.

[0008] In one implementation, the power converter circuit is one of a buck converter, a half-bridge converter, a full-bridge converter, a single-phase inverter, a three-phase inverter, and a multi-level topology such as neutral point clamp (NPC) and transistor neutral point clamp (TNPC).

[0009] In one embodiment, a method for manufacturing a power converter module includes: providing an active metal brazing (AMB) substrate, providing a power converter circuit, and providing a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite to the first surface. The power converter circuit includes a plurality of silicon carbide switching components coupled to each other via the first conductive layer. The housing is disposed on the power converter circuit and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the heat dissipation of the power converter module can be significantly improved while maintaining the structural integrity of the power converter module.

[0010] Those skilled in the art will understand the scope of this disclosure and implement other aspects thereof after reading the following detailed description of preferred embodiments in conjunction with the accompanying drawings. Attached Figure Description

[0011] The accompanying drawings are incorporated in and form part of this specification, illustrating several aspects of this disclosure and, together with the description, explaining the principles of this disclosure.

[0012] Figure 1An isometric view of a power converter module according to one embodiment of the present disclosure.

[0013] Figure 2 This is a side view of a power converter module according to one embodiment of the present disclosure.

[0014] Figure 3 This is a schematic diagram of a power converter circuit within a power converter module according to one embodiment of the present disclosure.

[0015] Figure 4 This is a schematic diagram of a boost converter including the power converter circuit shown, according to one embodiment of the present disclosure.

[0016] Figure 5 This is a schematic diagram of a boost converter including a power converter circuit according to another embodiment of the present disclosure.

[0017] Figure 6 This is a schematic diagram of a boost converter including a power converter circuit according to another embodiment of the present disclosure.

[0018] Figure 7 This is a top view of a power converter circuit according to one embodiment of the present disclosure.

[0019] Figure 8 For a substrate according to one embodiment of the present disclosure and Figure 3 A cross-sectional view of the power converter circuit is shown. Detailed Implementation

[0020] The embodiments described below provide the necessary information to enable those skilled in the art to practice these embodiments and illustrate the best mode of practice. Upon reading the following description in conjunction with the accompanying drawings, those skilled in the art will understand the concepts of this disclosure and recognize their applications not specifically emphasized herein. It is to be understood that these concepts and applications fall within the scope of this disclosure and the appended claims.

[0021] It should be understood that although terms such as "first," "second," etc., may be used in the text to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, without departing from the scope of this disclosure, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element. As used herein, "and / or" includes any and all combinations of one or more of the listed related items.

[0022] To understand this, when a component, such as a layer, region, or substrate, is referred to as "on another component" or "extending to another component," then the component may be directly on or directly extended to the other component, or intermediate components may also be present. Conversely, when a component is referred to as "directly on another component" or "directly extending to another component," then no intermediate components exist. Similarly, to understand this, when a component, such as a layer, region, or substrate, is referred to as "above another component" or "extending to another component," then the component may be directly above or directly extended to the other component, or intermediate components may also be present. Conversely, when a component is referred to as "directly above another component" or "directly extending to the other component," then no intermediate components exist. Also to understand this, when a component is referred to as "connected" or "coupled" to another component, then the component may be directly connected or coupled to the other component, or intermediate components may also exist. Conversely, when a component is referred to as "directly connected" or "directly coupled" to another component, then no intermediate components exist.

[0023] As shown in the figure, relative terms such as “below,” “above,” “upper,” “lower,” “horizontal,” or “vertical” can be used in the text to describe the relationship between one element, layer, or region and another. It should be understood that these terms, and those discussed above, are intended to encompass different orientations of the device beyond those shown in the figure.

[0024] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. Unless the context clearly indicates otherwise, the singular forms of “a,” “an,” and “the” as used herein are intended to include a plurality as well. To be further understood, the terms “comprising,” “including,” “having,” and / or “containing,” when used herein, indicate the presence of the mentioned features, integrals, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or groups thereof.

[0025] Unless otherwise specified, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. To be further understood, terms used herein shall be interpreted as having the same meaning as they would in the context of this specification and the relevant field, and shall not be interpreted as having an idealized or overly rigid meaning unless expressly stated herein.

[0026] Based on the above, a power converter circuit with improved performance is needed. Specifically, a power converter circuit capable of efficient operation at high switching frequencies and high power densities is required.

[0027] Figure 1 and Figure 2 Isometric and side views of a power converter module 10 according to one embodiment of the present disclosure are shown, respectively. The power converter module 10 includes a housing 12, a plurality of input / output (I / O) pins 14, and a plurality of mounting holes 16. The housing 12 may be made of a plastic material and has a footprint of approximately 31 mm x 66 mm x 16 mm, making the power converter module 10 compatible with existing power converter systems housing power converter modules of this size. It is evident that the principles of this disclosure can be applied to housings of any material and size. The I / O pins 14 are coupled to points within the housing 12 of the power converter circuitry (not shown), which will be discussed in detail below.

[0028] Figure 3 This is a schematic diagram illustrating details of a power converter circuit 18 within a housing 12 of a power converter module 10 according to one embodiment of the present disclosure. The power converter circuit 18 is divided into two parts (referred to herein as a "channel") and includes a first metal-oxide-semiconductor field-effect transistor (MOSFET) 20 coupled in series with a first diode 22 and a second MOSFET 24 coupled with a second diode 26. Specifically, the first MOSFET 20 includes a gate contact (G), a source contact (S), and a drain contact (D). The gate contact (G) of the first MOSFET 20 is coupled to a first pin 14A of an I / O pin. The source contact (S) of the first MOSFET 20 is coupled to a second pin 14B, a third pin 14C, and a fourth pin 14D of the I / O pin. The cathode of the first diode 22 is coupled to a fifth pin 14E and a sixth pin 14F of the I / O pin. The drain contact (D) of the first MOSFET 20 is coupled to a ninth pin 14G and a tenth pin 14H of the I / O pin and the anode of the first diode 22.

[0029] Similarly, the second MOSFET 24 includes a gate contact (G), a source contact (S), and a drain contact (D). The drain contact (D) of the second MOSFET 24 is coupled to pins 11 (14I) and 12 (14J) of the I / O pins and the anode of the second diode 26. The cathode of the second diode 26 is coupled to pins 13 (14K) and 14 (14L) of the I / O pins. The source contact (S) of the second MOSFET 24 is coupled to pins 15 (14M), 16 (14N), and 17 (14O) of the I / O pins. The gate contact (G) of the second MOSFET 24 is coupled to pin 18 (14P) of the I / O pins. A temperature measurement resistor R_TM is coupled between pins 19 (14Q) and 20 (14R) of the I / O pins.

[0030] A first MOSFET 20 and a first diode 22 (i.e., the first channel), together with one or more external components, form a first boost converter circuit, while a second MOSFET 24 and a second diode 26 (i.e., the second channel), together with one or more external components, form a second boost converter circuit. Since the individual boost converter circuits operate in the same manner, the operating principle of the boost converter circuits when they are associated with the first boost converter circuit will now be discussed. In operation, a direct current (DC) voltage is supplied across the source and drain contacts of the first MOSFET 20. In some embodiments, the DC voltage supplied to the drain contact (D) of the first MOSFET 20 may be provided via a boost inductor (not shown). Further, a switching control signal is typically provided to the gate contact (G) of the first MOSFET 20 via a gate driver circuit (not shown). The resulting voltage between the cathode of the first diode 22 and the source contact (S) of the first MOSFET 20 is the boosted DC output voltage. Thus, the first and second boost converter circuits can be used to appropriately scale high-power DC voltages, which are particularly useful in applications such as solar power systems.

[0031] Clearly, both the first MOSFET 20 and the second MOSFET 24 include gate return terminals (I / O pin 14B and I / O pin 14O, respectively) coupled to their source contacts (S). These gate return terminals are obviously positioned as close as possible to the first MOSFET 20 and the second MOSFET 24 to minimize parasitic inductance between the gate return terminals and the source contacts (S). Typically, this increases the achievable turn-on and turn-off speeds of the first MOSFET 20 and the second MOSFET 24, thereby improving the performance of the power converter circuit 18 by reducing switching losses.

[0032] Any of the first MOSFET 20, the first diode 22, the second MOSFET 24, and the second diode 26 is a silicon carbide device, which can be referred to as a switching device. As discussed herein, a switching device is a device that can selectively deliver power to a load. In one embodiment, the first diode 22 and the second diode 26 are Schottky diodes. Therefore, the performance of the power converter module 10 can be greatly improved. Specifically, because silicon carbide devices are majority carrier devices, they do not suffer from a reduction in switching speed due to the recombination of minority carriers that generate tail currents or reverse recovery currents. In one embodiment, the recovery current of a conventional silicon PiN diode is on the order of ~7000 nC, while the recovery current of the power converter circuit 18 is less than ~120 nC (>16x reduction). Therefore, silicon carbide devices operate at higher speeds than conventional silicon devices, which provides several performance advantages for the power converter module 10 discussed below. The first boost converter circuit and the second boost converter circuit can be referred to as the “channel”. Each of these channels can provide an output voltage between 650V and 1200V, an output current from 10A to 50A (e.g., 10A, 20A, 30A, 40A, and 50A), and an output power between 90W and 30kW. Furthermore, when operating at switching speeds greater than 40kHz, each of these channels provides an efficiency between approximately 96% and 99.5% and switching losses less than or equal to approximately 300W.

[0033] In addition to the performance advantages offered by using silicon carbide devices in the power converter module 10, the use of silicon carbide devices also saves costs. Specifically, the size of the filtering components (e.g., inductors and capacitors) used in the power conversion system incorporating the power converter module 10 is inversely proportional to the switching frequency of the power converter module. Furthermore, the size of the filtering components is directly proportional to their cost. Therefore, by using silicon carbide switching components that can operate at high frequencies, such as above 40 kHz, the size of the filtering components in the power system is significantly reduced, thereby saving costs.

[0034] Although Figure 3 The power converter circuit 18 shown is a dual-channel boost converter, but this disclosure is not limited thereto. The principles of this disclosure can be applied to power converter circuits 18 including buck converters, half-bridge converters, full-bridge converters, single-phase inverters, three-phase inverters, etc.

[0035] Figure 4A boost converter circuit 28 is shown, including a first channel of a power converter circuit 18. The boost converter circuit 28 includes a first MOSFET 20 and a first diode 22, a boost inductor 30, an output capacitor 32, and a voltage source 34. The boost inductor 30 is coupled between the positive output of the voltage source 34 and the drain contact (D) of the first MOSFET 20. The negative output of the voltage source 34 is coupled to the source contact (S) of the first MOSFET 20. The first diode 22 is coupled between the drain contact (D) of the first MOSFET 20 and a first load output 36 of the boost converter circuit 28. A second load output 38 is coupled to the source contact (S) of the first MOSFET 20. The output capacitor 32 is coupled between the first load output 36 and the second load output 38.

[0036] In operation, a positive voltage is transferred from voltage source 34 to boost inductor 30, and energy can be stored in boost inductor 30 as a magnetic field. A switching control signal is transmitted to the gate contact (G) of first MOSFET 20 to repeatedly switch first MOSFET 20 between off and on states. In the off state of first MOSFET 20, the positive potential on first diode 22 due to the charge on boost inductor 30 allows current to flow from boost inductor (I_BOOST) to first load output 36 and charge output capacitor 32. Although not shown, a load is coupled between first load output 36 and second load output 38 to complete the circuit. In the on state of first MOSFET 20, the anode of first diode 22 is shorted to ground, and the charge on output capacitor 32 keeps first diode 22 in blocking mode. The energy stored in output capacitor 32 allows current to continue flowing into the load (not shown).

[0037] Clearly, the speed at which the first MOSFET 20 transitions between the off and on states determines many of the operating characteristics of the boost converter circuit 28. The rapid switching speed allows the boost converter circuit 28 to operate in a continuous conduction mode where the current supplied by the boost inductor 30 decreases within a single switching cycle. Typically, silicon devices cannot achieve sufficient speed to operate in continuous conduction mode and must operate in discontinuous conduction mode. The reduced current supply requirement provided by rapidly switching the first MOSFET 20 leads to reduced energy storage requirements for the boost inductor 30 and reduced electromagnetic interference (EM), which simplifies the design of the electromagnetic filtering circuitry associated with the boost converter circuit 28. Therefore, the inductance of the boost converter can be reduced without affecting the performance of the boost converter circuit 28. Typically, the inductance value of an inductor is proportional to its size. Accordingly, the size of the boost inductor 30 can also be reduced. Furthermore, the inductance value and size of the inductor are proportional to its cost. Since the boost inductor 30 may be the most expensive component in the boost converter circuit 28, the high switching speed of the first MOSFET 20 is highly advantageous in order to reduce these costs. In one embodiment, due to the achievable switching speed of the first MOSFET 20 discussed herein, the inductance value of the boost inductor 30 can be less than 450 μH. For example, the inductance of the boost inductor 30 can be between 25 μH and 150 μH, between 150 μH and 300 μH, and between 300 μH and 450 μH. Further, in some embodiments, the total volume of the boost inductor 30 can be less than 7 cubic feet (e.g., between 1 cubic foot and 3 cubic feet, between 3 cubic feet and 5 cubic feet, and between 5 cubic feet and 7 cubic feet) and the total weight of the boost inductor 30 can be less than 1 pound (e.g., between 0.1 pounds and 0.3 pounds, between 0.3 pounds and 0.6 pounds, and between 0.6 pounds and 0.9 pounds).

[0038] Figure 5 A boost converter circuit 28 according to an alternative embodiment of the present disclosure is shown. Figure 5 The boost converter circuit 28 shown is generally similar to Figure 4 The circuit shown, but Figure 5 The illustrated boost converter circuit 28 includes an inner-loop capacitor 40 coupled between the first load output 36 and the second load output 38 (in parallel with the output capacitor 32). Clearly, the inner-loop capacitor 40 is within the power converter circuit 18 itself. Specifically, the inner-loop capacitor 40 closes the loop between the cathode of the first diode 22 and the source contact (S) of the first MOSFET 20 with the shortest possible length. By reducing parasitic inductance and thus ringing and other performance-degrading phenomena, the performance of the power converter circuit 18 is improved. Figure 5In the illustrated embodiment, the inner-loop capacitor 40 can be a high-frequency capacitor, such as a ceramic capacitor, while the output capacitor 32 can be a relatively low-frequency capacitor, such as an electrolyte capacitor or a polymer film capacitor. However, without departing from the principles described herein, the output capacitor 32 and the inner-loop capacitor 40 can be any type of capacitor.

[0039] Figure 6 A boost converter circuit 28 according to another embodiment of the present disclosure is shown. Figure 6 The boost converter circuit shown is largely similar to Figure 4 The circuit shown, but Figure 6 The illustrated boost converter circuit 28 includes a buffer circuit 42 coupled between a first load output 36 and a second load output 38. The buffer circuit 42 includes a buffer capacitor 44 and a buffer resistor 46, which are connected in series between the first load output 36 and the second load output 38. As discussed above, the buffer capacitor 44 and the buffer resistor 46 can be included within the power converter circuit 18 to reduce the length of the buffer loop between the cathode of the first diode 22 and the source contact (S) of the first MOSFET 20. The buffer circuit 42 effectively reduces transient signals occurring at the cathode of the first diode 22. Specifically, ringing caused by fluctuations in the current supplied at the cathode of the first diode 22 can be significantly reduced by the buffer circuit 42. Reducing this ringing prevents output overshoot and undershoot, thus improving the reliability and performance of the boost converter circuit 28 primarily by reducing radiated and conductive EMI.

[0040] Figure 7 This is a top view of a substrate 48 within a housing 12 according to one embodiment of the present disclosure. Clearly, the substrate 48 may be an active metal brazing (AMB) substrate, comprising an insulating aluminum nitride base layer 50 and a first conductive layer 52 on a first surface of the aluminum nitride base layer 50. As discussed herein, an active metal brazing (AMB) substrate is a substrate in which a conductive layer coated onto a base layer is brazed using a high-temperature vacuum brazing process to form a strong bond between the conductive layer and the insulating base layer. Typically, an AMB substrate is stronger than its existing counterparts formed using techniques such as direct copper bonding (DBC). Using an AMB substrate provides the necessary strength to the aluminum nitride base layer 50 to make it practically feasible for use within a power converter module 10, which does not include a substrate that increases its structural integrity in existing designs. Compared to existing substrate materials, such as alumina, aluminum nitride typically has superior thermal conductivity. The increased thermal conductivity provided by the aluminum nitride base layer 50 allows the switching components within the power converter module 10 to operate at lower temperatures, which translates to higher power levels, higher efficiency, higher reliability, or all three of these.

[0041] In other embodiments, substrate 48 may be an active metal brazing (AMB) substrate, which includes an insulating silicon nitride base layer 50 and a first conductive layer 52 on a first surface of the silicon nitride base layer 50. Silicon nitride may have similar properties to aluminum nitride as discussed above, thus improving the performance of the power converter module 10. In another embodiment, substrate 48 may be a DBC substrate, which includes an aluminum nitride or silicon nitride base layer, allowing for performance improvements similar to those discussed above.

[0042] The first conductive layer 52 is etched to form a desired pattern on the first surface of the aluminum nitride substrate 50. Bond wires 54 connect the first MOSFET 20, the first diode 22, the second MOSFET 24, and the second diode 26 to various portions of the first conductive layer 52 to connect the aforementioned components. Figure 3 The various components are described above. A specific pattern of the first conductive layer 52 is selected to minimize the distance from the gate contact (G) of each of the first MOSFET 20 and the second MOSFET 24 to their respective I / O pin 14, minimize the length of the bonding wire 54, and optimize the current flowing through the power converter module 10. In one embodiment, the pattern of the first conductive layer 52 and the path of the bonding wire 54 are designed such that the power switching path has a maximum length of approximately 50 mm, while the gate control path has a maximum length of approximately 20 mm. As defined herein, the gate control path is I / O pin 14O (… Figure 3 (shown) and I / O pin 14P (also shown) Figure 3 The total distance between (shown) is determined by tracing this path. Further, as defined herein, the power switching path is from I / O pins 14E and 14F to I / O pins 14C and 14D (both are shown). Figure 3 The total distance between (shown) is determined by tracing the path. Minimizing the power switching path length and the gate control path length reduces the stray inductance of the power converter module 10, which, according to some embodiments, can be less than 15 nH. In one embodiment, the bonding wire 54 in the gate control path has a diameter of ~5 mil, while the bonding wire 54 in the power switching path has a diameter of ~15 mil. More or less, the bonding wire 54 can be used as a specific lead to form a specific conductive path based on its desired current carrying capacity.

[0043] Figure 8 It shows Figure 7 The cross-sectional view shown is of the housing 12 and substrate 48 passing through line A-A'. Figure 8As shown, substrate 48 is mounted within housing 12 and includes aluminum nitride base 50, a first conductive layer 52, and a second conductive layer 58. A first diode is mounted on and connected to the first conductive layer 52 via die mounting material 56 and bonded via wire 54. In some embodiments, the space between substrate 48 and housing 12 is filled with an inert gel. Clearly, as discussed above, the power converter module 10 does not include a substrate. Therefore, substrate 48 must be appropriately robust to support the power converter circuit 18 formed on the first conductive layer 52. Furthermore, since silicon carbide devices are typically high-power-density devices that generate a large amount of heat, the relatively low thermal resistance of substrate 48 makes efficient heat dissipation suitable. A robust substrate 48 with efficient heat dissipation is provided using the AMB substrate discussed above. In one embodiment, insulating base 50 may have a minimum thermal conductivity of 30 W / mK to provide low thermal resistance between the power converter circuit 18 and the second conductive layer 58. Therefore, the power converter circuit 18 can be operated to provide additional power output, additional efficiency, or both.

[0044] Those skilled in the art will recognize improvements and variations to the preferred embodiments of this disclosure. All such improvements and variations are considered to be within the scope of the concepts disclosed herein and the appended claims.

Claims

1. A power converter module, comprising: shell; The substrate within the housing includes a base layer and a conductive layer on the surface of the base layer, and the substrate includes an active metal brazing substrate or a direct-bonded copper substrate; as well as A power converter circuit, the power converter circuit being on the substrate and including at least two silicon carbide switching components, the at least two silicon carbide switching components being coupled to each other via the conductive layer; The substrate is configured to form the base layer, such that the power converter module has no substrate.

2. The power converter module according to claim 1, wherein, The substrate includes the direct-bonded copper substrate, wherein the base layer of the direct-bonded copper substrate includes aluminum nitride or silicon nitride.

3. The power converter module according to claim 1, wherein, The substrate includes the active metal brazing substrate, wherein the active metal brazing substrate includes an insulating aluminum nitride base layer.

4. The power converter module according to claim 1, wherein, The power converter circuit is one of a buck converter, a half-bridge converter, a full-bridge converter, a single-phase inverter, and a three-phase inverter.

5. The power converter module according to claim 1, wherein, The power converter circuit is one of the multi-level topologies.

6. The power converter module according to claim 5, wherein, The multi-level topology is one of a clamped neutral point and a clamped transistor-type neutral point.

7. The power converter module according to claim 1, wherein, The power converter circuit is a boost converter, which is configured to receive a DC input voltage and provide a boosted DC output voltage.

8. The power converter module according to claim 1, wherein, The power converter circuit includes at least one silicon carbide metal oxide semiconductor field-effect transistor coupled in series with at least one silicon carbide Schottky diode.

9. The power converter module according to claim 8, wherein, The power converter circuit includes a boost converter, wherein at least one silicon carbide Schottky diode is coupled between the drain contact of at least one silicon carbide metal oxide semiconductor field-effect transistor and a first load output of the boost converter, and the source contact of the at least one silicon carbide metal oxide semiconductor field-effect transistor is coupled to a second load output of the boost converter.

10. The power converter module of claim 9, further comprising an inner loop capacitor disposed on the substrate and coupled between the cathode of the at least one silicon carbide Schottky diode and the source contact of the at least one silicon carbide metal oxide semiconductor field-effect transistor.

11. The power converter module of claim 9 further includes a buffer circuit coupled between the cathode of the at least one silicon carbide Schottky diode and the source contact of the at least one silicon carbide metal oxide semiconductor field-effect transistor.

12. The power converter module according to claim 11, wherein, The buffer circuit includes a resistor coupled between the first load output and the second load output.

13. The power converter module according to claim 12, wherein, The buffer circuit includes a capacitor, which is coupled in series with the resistor between the first load output and the second load output.

14. The power converter module according to claim 1, wherein, The power converter circuit is configured to selectively deliver power to a load, and wherein the stray inductance of the power converter circuit is less than 15nH.

15. The power converter module according to claim 14, wherein, The at least two silicon carbide switching components are coupled to the conductive layer via one or more bonding wires, such that the gate control path has a maximum length of approximately 20 mm and the power switching path has a maximum length of approximately 50 mm; and The lengths of the gate control path and the power switching path are minimized, such that the stray inductance of the power converter circuit is less than 15nH.

16. The power converter module according to claim 15, wherein, The conductive layer of the substrate is etched to form a desired connection pattern between the at least two silicon carbide switching components; and The at least two silicon carbide switch components are coupled to the conductive layer via one or more of the bonding wires.

17. The power converter module according to claim 14, wherein, The power converter circuit is configured to provide an output voltage greater than 650V and an output power greater than 900W, and to operate at a switching frequency greater than 40kHz.

18. The power converter module according to claim 1, wherein, The at least two silicon carbide switching components include: At least one metal-oxide-semiconductor field-effect transistor including a drain contact, a gate contact, and a source contact; and At least one diode, including a cathode and an anode coupled to the drain contact of the at least one metal-oxide-semiconductor field-effect transistor; and The power converter module further includes a buffer circuit coupled between the cathode of the at least one diode and the source contact of the at least one metal-oxide-semiconductor field-effect transistor.

19. The power converter module according to claim 18, wherein, The at least one diode is connected to the conductive layer.

20. The power converter module according to claim 18, wherein, The buffer circuit is configured to reduce the transient signal at the cathode of the at least one diode.

21. The power converter module according to claim 20, wherein, The buffer circuit includes a buffer capacitor coupled in series with a buffer resistor.

22. The power converter module according to claim 18, wherein, The buffer circuit includes a buffer capacitor coupled in series with a buffer resistor.

23. The power converter module according to claim 18, wherein, The power converter circuit is configured to provide an output voltage greater than 650V and an output power greater than 900W, and to operate at a switching frequency greater than 40kHz.

24. The power converter module according to claim 18, wherein, The at least one metal-oxide-semiconductor field-effect transistor is a silicon carbide metal-oxide-semiconductor field-effect transistor.

25. The power converter module according to claim 24, wherein, The at least one diode is a silicon carbide diode.

26. A power converter module, comprising: shell; The substrate includes a base layer, a first conductive layer on a first surface of the base layer, and a second conductive layer on a second surface of the base layer opposite to the first surface. The substrate includes an active metal brazing substrate or a direct-bonded copper substrate. as well as A power converter circuit, the power converter circuit being on the substrate and including a plurality of silicon carbide switching components, at least two of the plurality of silicon carbide switching components being coupled to each other via a first conductive layer, the plurality of silicon carbide switching components forming two channels, and each of the two channels including at least one silicon carbide transistor; The substrate is configured to form the base layer, such that the power converter module has no substrate.

27. The power converter module according to claim 26, wherein, Each of the two channels further includes at least one silicon carbide diode coupled in series with the at least one silicon carbide transistor.

28. The power converter module according to claim 27, wherein, The at least one silicon carbide transistor includes at least one silicon carbide metal-oxide-semiconductor field-effect transistor, and the at least one silicon carbide diode includes at least one silicon carbide Schottky diode.

29. The power converter module of claim 28 further includes an inner loop capacitor disposed on the substrate and coupled between the cathode of the at least one silicon carbide Schottky diode and the source contact of the at least one silicon carbide metal oxide semiconductor field-effect transistor.

30. The power converter module according to claim 28, wherein, The at least one silicon carbide Schottky diode is coupled between the drain contact of the at least one silicon carbide metal oxide semiconductor field-effect transistor and the first load output of the power converter circuit, and the source contact of the at least one silicon carbide metal oxide semiconductor field-effect transistor is coupled to the second load output of the power converter circuit system.

31. The power converter module of claim 30 further includes a buffer circuit coupled between the cathode of the at least one silicon carbide Schottky diode and the source contact of the at least one silicon carbide metal oxide semiconductor field-effect transistor.

32. The power converter module according to claim 31, wherein, The buffer circuit includes a resistor coupled between the first load output and the second load output.

33. The power converter module according to claim 32, wherein, The buffer circuit includes a capacitor, which is coupled in series with the resistor between the first load output and the second load output.

34. The power converter module according to claim 26, wherein, The plurality of silicon carbide switching components include: At least one metal-oxide-semiconductor field-effect transistor (MOSFET) is disposed on the substrate, the at least one MOSFET including a drain contact, a gate contact, and a source contact; and At least one diode, disposed on the substrate and including a cathode and an anode coupled to the drain contact of the at least one metal-oxide-semiconductor field-effect transistor; and The power converter module further includes an inner loop capacitor disposed on the substrate and coupled between the cathode of the at least one diode and the source contact of the at least one metal-oxide-semiconductor field-effect transistor.

35. The power converter module according to claim 34, wherein, The at least one diode is connected to the first conductive layer.

36. The power converter module according to claim 34, wherein, The inner-loop capacitor is located within the power converter circuit and is configured to close the loop between the at least one diode and the at least one metal-oxide-semiconductor field-effect transistor to reduce the parasitic inductance at the cathode of the at least one diode.

37. The power converter module according to claim 36, wherein, The inner ring capacitor is a high-frequency ceramic capacitor.

38. The power converter module according to claim 34, wherein, The inner ring capacitor is a high-frequency ceramic capacitor.

39. The power converter module according to claim 34, wherein, The power converter circuit is configured to provide an output voltage greater than 650V and an output power greater than 900W, and to operate at a switching frequency greater than 40kHz.

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