Semiconductor structure and manufacturing method thereof

Abstract

A semiconductor structure includes a ceramic substrate, a first bonding layer, a second bonding layer, a cavity, and a semiconductor layer. The ceramic substrate includes a hole on its surface. The first bonding layer is disposed on the surface of the ceramic substrate, and the second bonding layer is bonded to the first bonding layer. The cavity is disposed above the hole and enclosed by the first and second bonding layers. The semiconductor layer extends across the cavity and is disposed along the surface of the second bonding layer.

Claims

1. A semiconductor structure, characterized in that include: A ceramic substrate comprising a surface and at least one hole located on the surface; a first bonding layer disposed on the surface of the ceramic substrate; a second bonding layer bonded to the first bonding layer; at least one cavity disposed above the at least one hole and enclosed by the first bonding layer and the second bonding layer; as well as A semiconductor layer extends over the at least one cavity and is disposed along the surface of the second bonding layer.

2. The semiconductor structure according to claim 1, wherein At least one of a depth and a width of the at least one hole is 10 μm to 30 μm.

3. The semiconductor structure according to claim 1, wherein The depth of the at least one hole is greater than the thickness of the first bonding layer.

4. The semiconductor structure according to claim 1, wherein: The material of the first bonding layer is different from that of the ceramic substrate.

5. The semiconductor structure according to claim 1, wherein The material of the first bonding layer and the second bonding layer includes silicon-containing oxide.

6. The semiconductor structure according to claim 1, wherein The first bonding layer includes a first filling layer and a second filling layer. The second filling layer fills the at least one hole, and the second filling layer is disposed on the first filling layer.

7. The semiconductor structure according to claim 1, wherein: There is a contact surface between the first bonding layer and the second bonding layer; and At least one edge of the at least one cavity is flush with the contact surface.

8. The semiconductor structure according to claim 1, wherein: The second bonding layer covers the surface of the ceramic substrate and extends across the at least one hole and the at least one cavity.

9. The semiconductor structure according to claim 1, wherein: The semiconductor layer directly contacts the second bonding layer and is arranged along the surface of the second bonding layer in a conformal manner.

10. The semiconductor structure according to claim 1, wherein: The device further comprises a device layer, which is disposed on the semiconductor layer and comprises at least one electrode, an interconnection structure, and at least one dielectric layer.

11. A method for manufacturing a semiconductor structure, characterized in that: include: A first wafer structure is provided, wherein the first wafer structure comprises: a ceramic substrate comprising a surface and at least one hole located on the surface; and a first bonding layer disposed on the surface of the ceramic substrate, with a portion of the first bonding layer filling the at least one hole; A second wafer structure is provided, wherein the second wafer structure comprises: a semiconductor layer comprising a surface; and a second bonding layer disposed on the surface of the semiconductor layer; and The first wafer structure and the second wafer structure are bonded together so that the first bonding layer and the second bonding layer enclose at least one cavity, wherein the at least one cavity overlaps the at least one hole.

12. The method for manufacturing a semiconductor structure according to claim 11, wherein: At least one of the depth and width of the at least one hole is 10 μm to 30 μm; and The material of the first bonding layer and the second bonding layer includes silicon-containing oxide.

13. The method for manufacturing a semiconductor structure according to claim 11, wherein: The steps of forming the first wafer structure include: providing the ceramic substrate; and The first bonding layer is deposited on the surface of the ceramic substrate.

14. The method for manufacturing a semiconductor structure according to claim 13, wherein: The step of depositing the first bonding layer on the surface of the ceramic substrate includes: depositing a first filling layer in the at least one hole; and A second filling layer is deposited on the first filling layer and in the at least one hole, wherein a surface of the second filling layer includes at least one recess.

15. The method for manufacturing a semiconductor structure according to claim 11, wherein: Before bonding the first wafer structure and the second wafer structure, the method further includes: performing a planarization process to planarize the surface of the first bonding layer and the surface of the second bonding layer respectively; and After the planarization process is performed, a plasma treatment process is performed on the surface of the first bonding layer and the surface of the second bonding layer.

16. The method for manufacturing a semiconductor structure according to claim 11, wherein: Before bonding the first wafer structure and the second wafer structure, the second wafer structure further comprises a carrier layer, and the carrier layer and the semiconductor layer form a single crystal structure; Before bonding the first wafer structure and the second wafer structure, a doping process is further performed to form a doped layer between the carrier layer and the semiconductor layer; as well as After bonding the first wafer structure and the second wafer structure, the method further includes separating the carrier layer and the semiconductor layer along a plane formed by the doping layer to expose the doping layer.

17. The method for manufacturing a semiconductor structure according to claim 16, wherein: After the doping layer is exposed, the semiconductor layer extends across directly above the at least one cavity.

18. The method for manufacturing a semiconductor structure according to claim 11, wherein: After bonding the first wafer structure and the second wafer structure, the second bonding layer covers the surface of the ceramic substrate and extends across the at least one cavity.

19. The method for manufacturing a semiconductor structure according to claim 11, wherein: The semiconductor layer includes the surface and another surface opposite to the surface, and after bonding the first bonding layer and the second bonding layer, the method further includes planarizing the other surface of the semiconductor layer.

20. The method for manufacturing a semiconductor structure according to claim 19, wherein: After planarizing the other surface of the semiconductor layer, a device layer is formed on the other surface. The device layer includes at least one electrode, an interconnection structure, and at least one dielectric layer.

Images