Display panels and electronic devices

Abstract

The present invention provides a display panel and electronic device. The display panel includes a light-emitting structure layer, a polarizing layer disposed on the light-emitting side of the light-emitting structure layer, a first light-extraction enhancement layer disposed on a side of the polarizing layer away from the light-emitting structure layer, and an encapsulation layer disposed on a side of the first light-extraction enhancement layer away from the polarizing layer. The solution of the present invention can improve the light extraction efficiency of OLED devices.

Description

Technical Field

[0001] The present invention relates to a display panel and electronic equipment, belonging to the technical field of organic light-emitting display. Background Art

[0002] Compared with traditional LCD (Liquid Crystal Display) display technology, OLED (Organic Light-Emitting Diode) has the advantages of active luminescence, light weight, fast response speed, good stability, low driving voltage, rich material variety, and high contrast, so it is widely used.

[0003] However, insufficient brightness and low external quantum efficiency (light extraction efficiency) have hindered the rapid development of OLEDs, so improving the light extraction efficiency of OLEDs has become the key to the development of OLEDs. Summary of the Invention

[0004] The present invention provides a display panel and an electronic device to solve the problem of low light extraction efficiency of OLED.

[0005] An embodiment of the present invention provides a display panel, comprising:

[0006] a light-emitting structure layer;

[0007] a polarizing layer, disposed on the light-emitting side of the light-emitting structure layer;

[0008] A first light extraction enhancement layer is provided on a side of the polarizing layer away from the light emitting structure layer; and

[0009] The encapsulation layer is arranged on a side of the first light extraction enhancement layer away from the polarizing layer.

[0010] Optionally, the display panel further includes a second light extraction enhancement layer;

[0011] The second light extraction enhancement layer is disposed on the backlight side of the light emitting structure layer, and is used to reflect part of the light emitted by the light emitting structure layer to the light extraction side of the light emitting structure layer.

[0012] The light emitting structure layer includes a first electrode, a second electrode and a light emitting material layer located between the first electrode and the second electrode; wherein the first electrode is located on the backlight side of the light emitting structure layer;

[0013] The second light extraction enhancement layer includes a reflective layer arranged on a side of the first electrode close to the light emitting material layer.

[0014] Optionally, the reflective layer is a nano-aluminum thin film layer.

[0015] Optionally, the thickness of the nano-aluminum thin film layer is 100-300 nanometers.

[0016] Optionally, the first light extraction enhancement layer includes a first anti-reflection layer and a second anti-reflection layer, wherein the first anti-reflection layer is arranged on the light extraction side of the polarizing layer, and the second anti-reflection layer is arranged on a side of the first anti-reflection layer away from the polarizing layer; and the refractive index of the first anti-reflection layer is smaller than the refractive index of the second anti-reflection layer;

[0017] Optionally, a planarization layer is provided on the light-emitting side of the polarizing layer, the second anti-reflection layer is provided on a side of the planarization layer away from the polarizing layer, a plurality of grooves are provided on a side of the second anti-reflection layer adjacent to the planarization layer, the first anti-reflection layer includes a plurality of anti-reflection units, and the plurality of anti-reflection units are respectively embedded in the grooves;

[0018] Furthermore, the refractive index of the first anti-reflection layer is smaller than the refractive index of the second anti-reflection layer.

[0019] Preferably, the refractive index of the first anti-reflection layer is 1.4-1.5, and the refractive index of the second anti-reflection layer is 1.6-1.9.

[0020] Optionally, the light-emitting structure layer includes multiple pixel openings; the orthographic projection of a single anti-reflection unit or multiple adjacent anti-reflection units on the light-emitting structure layer is a fully enclosed pattern or a partially enclosed pattern, and the fully enclosed pattern or the partially enclosed pattern surrounds the pixel openings.

[0021] Optionally, the fully enclosed figure or partially enclosed figure includes continuous or partially discontinuous diamond rings, hexagonal rings and circular rings.

[0022] Optionally, the material of the first anti-reflection layer includes silicon dioxide, and the material of the second anti-reflection layer includes silicon nitride or zirconium oxide.

[0023] Optionally, the thickness of the first anti-reflection layer and the second anti-reflection layer are both 100-500 nanometers.

[0024] An embodiment of the present invention further provides a display panel, which includes any one of the above display panels.

[0025] An embodiment of the present invention further provides an electronic device, which includes the display panel described above.

[0026] The display panel and electronic device provided by the present invention include a light-emitting structure layer, a polarizing layer arranged on the light-emitting side of the light-emitting structure layer, a first light-extraction enhancement layer arranged on the side of the polarizing layer away from the light-emitting structure layer, and an encapsulation layer arranged on the side of the first light-extraction enhancement layer away from the polarizing layer. The light emitted by the light-emitting structure layer passes through the polarizing layer and enters the first light-extraction enhancement layer, where it is reflected and refracted. The first light-extraction enhancement layer offsets the partial reflected light on the side of the first light-extraction enhancement layer close to the light-emitting structure layer with the partial reflected light on the side of the first light-extraction enhancement layer away from the light-emitting structure layer, thereby reducing interlayer reflection of the light, increasing light transmittance, and improving light extraction efficiency. Therefore, the light extraction efficiency of the device can be improved by the above-mentioned first light-extraction enhancement layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The accompanying drawings are incorporated into and constitute a part of the specification, illustrate embodiments consistent with the present invention, and together with the description, serve to explain the principles of the present invention. In addition, these drawings and the description are not intended to limit the scope of the present invention in any way, but rather to illustrate the concept of the present invention for those skilled in the art by reference to specific embodiments.

[0028] Figure 1 A schematic diagram of a partial structure of an existing OLED device;

[0029] Figure 2 is a schematic structural diagram of a display panel according to an embodiment of the present invention;

[0030] Figure 3 is a schematic structural diagram of another display panel according to an embodiment of the present invention;

[0031] Figure 4 for Figure 3 A partial enlarged schematic diagram of the structure of the display panel;

[0032] Figure 5 is a schematic structural diagram of another display panel according to an embodiment of the present invention;

[0033] Figure 6 is a schematic structural diagram of another display panel according to an embodiment of the present invention;

[0034] Figure 7 is a schematic structural diagram of another display panel according to an embodiment of the present invention;

[0035] Figure 8 is a schematic top view of the structure of a display panel according to an embodiment of the present invention;

[0036] Figure 9 is a schematic top view of another display panel according to an embodiment of the present invention;

[0037] Figure 10Schematic diagram of a top view of another display panel according to an embodiment of the present invention;

[0038] Figure 11 is a schematic structural diagram of another display panel according to an embodiment of the present invention;

[0039] Figure 12 FIG. 4 is a structural diagram of another display panel according to an embodiment of the present invention.

[0040] Description of reference numerals:

[0041] 1-light-emitting structure layer;

[0042] 2-Sub-pixel structure

[0043] 10- anode;

[0044] 20-hole transport layer;

[0045] 30-light-emitting layer;

[0046] 40-electron transport layer;

[0047] 50-cathode;

[0048] 60-encapsulation layer;

[0049] 70-substrate;

[0050] 80- second light extraction enhancement layer;

[0051] 90-first light extraction enhancement layer;

[0052] 901-first anti-reflection layer;

[0053] 902- second anti-reflection layer;

[0054] 100-planarization layer;

[0055] 110 polarizing layer. DETAILED DESCRIPTION

[0056] To make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. The following embodiments and features in the embodiments can be combined with each other unless there is a conflict.

[0057] Application Overview

[0058] Reference Figure 1 , Figure 1 This is a schematic diagram of a partial structure of an existing OLED device. Figure 1 The structure shown includes, from bottom to top, an anode 10, a hole transport layer 20, a light-emitting layer 30, an electron transport layer 40, a cathode 50, and an encapsulation layer 60. Holes generated at the anode 10 and electrons generated at the cathode 50, respectively, travel through the hole transport layer 20 and electron transport layer 40 before recombining in the light-emitting layer 30 and emitting light. Some light propagates upward, passes through the multiple layers (electron transport layer 40, cathode 50, and encapsulation layer 60), and exits from the light-emitting side. Another portion of the light propagates downward, is reflected by the anode 10, and then exits from the light-emitting side.

[0059] Based on the above structure, the inventors found that Figure 1 As shown, the light propagation process will produce total reflection between the film interfaces on the light-emitting side and a waveguide effect within the film layer ( Figure 1 The middle arrow shows the propagation path of part of the light), that is, all light that is not incident from a vertical direction will be partially reflected back to the OLED stack, and after countless reflections, it will be transmitted from the side of the device, resulting in light loss. This will cause about 80% of the light in the OLED stack to be suppressed inside the device, reducing the light extraction efficiency (external quantum efficiency). In addition, when the light is reflected at the interface of the anode 10, part of the light will be absorbed, making the reflected light less than the incident light, further reducing the light extraction efficiency. According to research, the current light extraction efficiency (external quantum efficiency) is generally between 20% and 30%, so improving the light extraction efficiency (external quantum efficiency) has become the key to the development of OLEDs.

[0060] To address the above problems, embodiments of the present invention provide a display panel and an electronic device that increase light extraction efficiency by providing one or more light extraction enhancement layers. Specific solutions are described below in a non-limiting manner using exemplary embodiments.

[0061] Exemplary display panels

[0062] Reference Figure 2-5 ,in, Figure 2-4 are schematic structural diagrams of three display panels according to embodiments of the present invention, Figure 5 for Figure 3 The enlarged schematic diagram of part of the structure of the display panel is shown in the figure. Figure 2 As shown, the display panel includes:

[0063] Light-emitting structure layer 1; used for emitting light;

[0064] The polarizing layer 110 is provided on the light-emitting side of the light-emitting structure layer 1 and is used to change the path of the light so as to facilitate light extraction.

[0065] The first light extraction enhancement layer 90 is provided on the side of the polarizing layer 110 away from the light emitting structure layer 1; and is used to offset the partial reflected light on the side of the first light extraction enhancement layer 90 close to the light emitting structure layer 1 and the partial reflected light on the side of the first light extraction enhancement layer 90 away from the light emitting structure layer 1; and

[0066] The encapsulation layer 60 is disposed on a side of the first light extraction enhancement layer 90 away from the light emitting structure layer 1 .

[0067] The light emitting structure layer 1 refers to a film structure including a first electrode, a second electrode, and a film layer structure therebetween for emitting light and assisting in emitting light, wherein the first electrode and the second electrode are respectively one of the anode 10 and the cathode 50. In addition, the first electrode is located on the other side away from the light emitting side of the light emitting structure layer 1. In addition, it should be noted that Figure 2 The display panel shown further includes a substrate 70 , on which the light emitting structure layer 1 is disposed. The substrate 70 supports the film structures thereon.

[0068] Specifically, one reason for low light extraction efficiency is the reflection of some light at the interface between the film layers on the light-exiting side. Therefore, by providing a first light extraction enhancement layer 90 on the light-exiting side, the partial reflection of light on the side of the first light extraction enhancement layer 90 close to the light-emitting structure layer 1 can be offset by the partial reflection of light on the side of the first light extraction enhancement layer 90 away from the light-emitting structure layer 1. This can reduce the reflected light on the film surface, thereby enhancing transmittance and increasing light transmittance, ultimately improving light extraction efficiency. Because the function of the first light extraction enhancement layer 90 is to reduce reflected light, it can also be referred to as an anti-reflection layer.

[0069] Furthermore, the first light extraction enhancement layer 90 provides a first layer of encapsulation for the top metal layer of the light-emitting structure layer 1, while the encapsulation layer 60, located on the side of the first light extraction enhancement layer 90 away from the light-emitting structure layer 1, provides a second layer of encapsulation for the top metal layer of the light-emitting structure layer 1. This two-layer encapsulation ensures a better encapsulation effect, and the first light extraction enhancement layer 90 and the encapsulation layer 60 can be made of different materials, thereby better preventing encapsulation failure and extending service life.

[0070] In other embodiments, Figure 3 and 4 As shown, the display panel further includes a second light extraction enhancement layer 80 ; the second light extraction enhancement layer 80 is arranged on the backlight side of the light emitting structure layer 1 , and the second light extraction enhancement layer 80 is used to reflect part of the light emitted by the light emitting structure layer 1 to the light extraction side of the light emitting structure layer 1 .

[0071] Specifically, another reason for the low light extraction efficiency is that the light emitted by the light emitting structure layer 1 is partially absorbed by the first electrode when it is reflected at the first electrode on the backlight side of the light emitting structure layer 1. Therefore, by providing a second light extraction enhancement layer 80, i.e., a reflective layer, on the side away from the light extraction side of the light emitting structure layer 1, which has a reflective effect, the reflective ability of this side for light can be enhanced, the reflectivity can be increased, and the amount of light that passes through the light extraction side can be indirectly increased, that is, the light extraction efficiency can be ultimately improved.

[0072] It is understandable that, in addition to Figure 2 and Figure 3 In some other embodiments, the display panel shown in FIG. Figure 5 As shown, the display panel may include the second light extraction enhancement layer 80 but does not include the first light extraction enhancement layer 90 .

[0073] The above is a general description of the principles of the present invention. The specific implementation scheme will be described in detail below with reference to multiple embodiments and drawings.

[0074] Reference Figure 6 , Figure 6 FIG. 1 is a schematic diagram of the structure of another display panel according to an embodiment of the present invention. Figure 6 As shown, in this embodiment, the light emitting structure layer 1 includes a stacked anode 10, a hole transport layer 20, a light emitting layer 30, an electron transport layer 40 and a cathode 50, wherein the hole transport layer 20, the light emitting layer 30 and the electron transport layer 40 constitute a light emitting material layer. Figure 4 The OLED device corresponding to the display panel shown is a top-emitting structure, that is, the side where the cathode 50 is located is the light-emitting side, and the cathode 50 is a transparent structure, and the anode 10 is an opaque structure and can reflect light.

[0075] Furthermore, it is understood that, except Figure 6 In addition to the film layer structure shown, the light-emitting structure layer 1 may also include a hole injection layer located between the hole transport layer 20 and the anode 10, or may also include an electron injection layer located between the electron transport layer 40 and the cathode 50, or may not include the hole transport layer 20, etc., and there is no specific limitation.

[0076] Continue to refer to Figure 6 In this embodiment, the first electrode, namely the anode 10, is provided with a second light extraction enhancement layer 80 on the side close to the light emitting material layer (between the anode 10 and the light emitting material layer). The second light extraction enhancement layer 80 can also be called a reflective layer.

[0077] In some specific embodiments, since aluminum has good reflectivity for near-ultraviolet light, visible light, and near-infrared light, the reflective layer can be a nano-aluminum thin film layer, i.e., a nano-thin film layer formed of aluminum. The thickness of the nano-aluminum thin film layer can be adjusted based on the thickness of the other film layers to ensure that the light-emitting structure layer 1 forms an optical microcavity, enabling the formation and propagation of light. Optionally, the thickness of the nano-aluminum thin film layer is generally not less than 100 nanometers to ensure effective reflection, and is generally not greater than 300 nanometers to avoid excessive thickness of the reflective layer, which may affect the configuration of other film layers such as the anode 10 and the hole transport layer 20.

[0078] Furthermore, the nano-aluminum thin film layer can be prepared using physical vapor deposition (PVD). During the preparation process, the nano-aluminum thin film layer can be deposited in the same chamber as the anode material, thereby shortening the process and reducing costs. Of course, the nano-aluminum thin film layer can also be prepared using other methods, which are not limited to this.

[0079] It should be noted that although Figure 6 The reflective layer (second light extraction enhancement layer 80) and the anode 10 shown are a two-layer stacked structure, but in fact, the reflective layer can also be fully or partially doped into the surface of the anode 10. Its main function is to improve the roughness of the surface of the anode 10, thereby increasing the reflectivity of the surface of the anode 10.

[0080] It is understood that, in addition to the nano-aluminum thin film layer, the reflective layer can also be a nano-thin film layer formed by other high reflectivity materials, such as gold, etc., and its function and preparation principle are similar to those of the nano-aluminum thin film layer.

[0081] Continue to refer to Figure 6 In this embodiment, a first light extraction enhancement layer 90 is disposed on the side of the polarizing layer 110 away from the cathode 50. The first light extraction enhancement layer 90 may also be referred to as an anti-reflection layer. The first light extraction enhancement layer 90 includes a first anti-reflection layer 901 and a second anti-reflection layer 902. The first anti-reflection layer 901 is disposed on the light-exiting side of the polarizing layer 110, and the second anti-reflection layer 902 is disposed on the side of the first anti-reflection layer 901 away from the polarizing layer 110. The refractive index of the first anti-reflection layer 901 is lower than that of the second anti-reflection layer 902.

[0082] Specifically, the anti-reflection layer requires high transmittance and a relatively high refractive index (greater than the refractive index of the cathode 50). Since the refractive index of the cathode 50 is very low, after sequentially providing the first anti-reflection layer 901 and the second anti-reflection layer 902 on the cathode 50, a multi-layer structure with a refractive index that increases sequentially along the direction of light emission can be obtained. As a result, when light passes through the anti-reflection layers, the reflected light generated by the upper and lower surfaces of the layers interferes with each other, thereby canceling out some of the reflected light. This reduces the amount of light reflected between the layers, increases the amount of light that passes through the layers, and reduces or eliminates stray light in the structure. Since the anti-reflection film has different anti-reflection effects for different spectrum widths, in order to achieve excellent anti-reflection effects across a wide spectral range, the anti-reflection film is configured as a double-layer structure, namely, including the first anti-reflection layer 901 and the second anti-reflection layer 902. It is understood that, depending on actual needs, the anti-reflection film can also include only a single-layer structure, or a structure including three or more layers.

[0083] In some embodiments, the refractive index of the first anti-reflection layer 901 is 1.4-1.5, and the refractive index of the second anti-reflection layer 902 is 1.6-1.9. More specifically, the first anti-reflection layer 901 can be made of porous silica (SiO2) with a refractive index of 1.4-1.5. Porous silica has the advantages of low cost, easy availability, and high strength. Therefore, in addition to improving light transmittance, it can also improve the crack resistance of the display panel. The second anti-reflection layer 902 can be made of silicon nitride (SiN) with a refractive index of 1.9 or zirconium oxide (ZrO) with a refractive index of 1.6-1.8. In addition to improving light transmittance, it can also improve alkali resistance and water and oxygen isolation performance. Of course, the first anti-reflection layer 901 or the second anti-reflection layer 902 can also be made of other feasible materials, as long as they can meet the higher refractive index requirements and the refractive index of the first anti-reflection layer 901 is less than the refractive index of the second anti-reflection layer 902, without specific limitation.

[0084] More specifically, the thickness of the first anti-reflection layer 901 and the second anti-reflection layer 902 can be set according to actual requirements. Generally, when each layer is at least 100 nanometers, a good anti-reflection effect can be obtained. However, if it is too thick, the overall thickness of the display panel will increase. Therefore, the thickness of the first anti-reflection layer 901 and the second anti-reflection layer 902 is generally preferably not more than 500 nanometers.

[0085] In some embodiments, the first anti-reflection layer 901 and the second anti-reflection layer 902 may be sequentially prepared by chemical vapor deposition (CVD).

[0086] The reflective layer and the first anti-reflection layer 901 and the second anti-reflection layer 902 of the above embodiment can, on the one hand, improve the reflection effect of the light emitted by the light-emitting layer 30 at the anode 10, and on the other hand, improve the transmittance of the light on the light-emitting side, thereby ultimately improving the light extraction efficiency of the device.

[0087] In addition, refer to Figure 7 , Figure 7 FIG. 1 is a structural diagram of another display panel according to an embodiment of the present invention. Figure 7 As shown, in this embodiment, Figure 6 In addition to the display panel shown, the display panel further includes a planarization layer 100 disposed on the light-emitting side of the polarizing layer 110. Furthermore, a second anti-reflection layer 902 is disposed on the side of the planarization layer 100 away from the light-emitting structure layer 1, and a plurality of grooves are disposed on the side of the second anti-reflection layer 902 adjacent to the planarization layer 100. The first anti-reflection layer 901 includes a plurality of anti-reflection units, each of which is embedded in the grooves. The refractive index of the first anti-reflection layer 901 is lower than that of the second anti-reflection layer 902.

[0088] Specifically, in this embodiment, relative to Figure 6 In the display panel structure shown, the first anti-reflection layer 901 is no longer a continuous film structure. Instead, the first anti-reflection layer 901 is set as a plurality of independent sub-units, namely, anti-reflection units. In this way, the emission direction of light when passing through the first anti-reflection layer 901 and the second anti-reflection layer 902 can be better changed, and the total internal reflection of light with a large incident angle at the film layer interface can be reduced. The principle is: when light with a large incident angle passes through the anti-reflection layer, since the second anti-reflection layer 902 is embedded with multiple anti-reflection units of the first anti-reflection layer 901, and the first anti-reflection layer 901 and the second anti-reflection layer 902 have different refractive indices, the direction of the light can be changed, thereby reducing total internal reflection and improving light extraction efficiency.

[0089] Further, refer to Figure 8-10 , Figure 8-10 Schematic diagrams of top views of three display panels according to embodiments of the present invention. Figure 8-10 As shown, in some embodiments, the light emitting structure layer 1 includes a plurality of pixel openings, and each pixel opening is used to form a red, green or blue sub-pixel structure 2.

[0090] Moreover, the orthographic projection of a single anti-reflection unit or multiple adjacent anti-reflection units on the light-emitting structure layer 1 is a fully enclosed pattern or a partially enclosed pattern, and the fully enclosed pattern or the partially enclosed pattern surrounds the pixel opening, that is, surrounds the sub-pixel structure 2 .

[0091] With such an arrangement, under the action of the anti-reflection unit, when light with a larger incident angle emitted from the sub-pixel structure 2 passes through the anti-reflection layer, total internal reflection can be better reduced, thereby improving light extraction efficiency.

[0092] Among them, reference Figure 8 , four adjacent anti-reflection units form a partially discontinuous and partially closed diamond ring graphic structure, and the sub-pixel structure 2 is located at the center of the semi-closed diamond ring graphic structure.

[0093] Reference Figure 9 , a single anti-reflection unit forms a continuous fully enclosed hexagonal ring structure, and the sub-pixel structure 2 is located at the center of the fully enclosed hexagonal ring structure.

[0094] Reference Figure 10 , a single anti-reflection unit forms a continuous fully enclosed circular ring structure, and the sub-pixel structure 2 is located at the center of the fully enclosed circular ring structure.

[0095] It is understandable that, in addition to Figure 8-10 In addition to the fully enclosed graphic or partially enclosed graphic structure shown, the orthographic projection of a single anti-reflection unit or multiple adjacent anti-reflection units on the light-emitting structure layer 1 can also be other fully enclosed graphics or partially enclosed graphics, such as a fully enclosed or partially enclosed octagonal ring, as long as it can conveniently reduce total internal reflection and improve light extraction efficiency.

[0096] It should be noted that Figure 8-10 The thickness and material of the anti-reflection layer shown can be Figure 6 The same is shown and will not be described in detail here.

[0097] In addition, due to Figure 8-10 The structure shown requires patterning of the anti-reflection layer, that is, processing to obtain a fully closed or partially closed pattern, so its preparation process is similar to Figure 6 The structure shown is different. In some embodiments, the process for preparing the anti-reflection layer includes: first, cleaning the surface of the cathode 50, then forming a planarization layer 100 on the surface of the cathode 50 using a CVD method or inkjet printing method; then, depositing a layer of silicon dioxide or other suitable material using a CVD method to form a first anti-reflection layer 901; then, applying a photoresist to the surface of the first anti-reflection layer 901, and then etching the desired pattern using exposure and development; then, etching using a sodium hydroxide solution to ultimately obtain a patterned first anti-reflection layer 901, i.e., obtaining multiple anti-reflection units; and then, printing a second anti-reflection layer 902 onto the surface of the first anti-reflection layer 901 using a printing process (inkjet printing). The planarization layer 100 primarily ensures that the first anti-reflection layer 901 is formed on a planarized film layer. Thus, the preparation process is simple and effective.

[0098] It should be noted that the above embodiments are all described based on a display panel with a top light-emitting structure, but in fact, the light-emitting enhancement layer of the present invention can also be applied to a display panel with a bottom light-emitting structure. Figure 11 , Figure 11 FIG. 1 is a schematic diagram of the structure of another display panel according to an embodiment of the present invention. Figure 11 As shown, the OLED device corresponding to the display panel in this embodiment has a bottom-emitting structure, that is, the side where the anode 10 is located is the light-emitting side, and the anode 10 is a transparent structure, while the cathode 50 is an opaque structure for reflecting light. The light-emitting structure layer 1 includes a stacked anode 10, a hole transport layer 20, a light-emitting layer 30, an electron transport layer 40, and a cathode 50. The hole transport layer 20, the light-emitting layer 30, and the electron transport layer 40 constitute the light-emitting material layer.

[0099] Furthermore, it is understood that, except Figure 11 In addition to the film layer structure shown, the light-emitting structure layer 1 may also include a hole injection layer located between the hole transport layer 20 and the anode 10, or may also include an electron injection layer located between the electron transport layer 40 and the cathode 50, or may not include the electron transport layer 40, etc., and there is no specific limitation.

[0100] Continue to refer to Figure 11 In this embodiment, the first electrode, namely the cathode 50, is provided with a second light extraction enhancement layer 80 on the side close to the light emitting material layer (between the cathode 50 and the light emitting material layer). The second light extraction enhancement layer 80 can also be called a reflective layer.

[0101] It should be noted that although Figure 11 The reflective layer and cathode 50 shown are a two-layer stacked structure, but in fact, the reflective layer can also be fully or partially doped into the surface of the cathode 50. Its main function is to improve the roughness of the surface of the cathode 50, thereby increasing the reflectivity of the surface of the cathode 50.

[0102] Continue to refer to Figure 11 In this embodiment, a first light extraction enhancement layer 90 is disposed on the side of the polarizing layer 110 away from the anode 10. The first light extraction enhancement layer 90 may also be referred to as an anti-reflection layer. The first light extraction enhancement layer 90 includes a first anti-reflection layer 901 and a second anti-reflection layer 902. The first anti-reflection layer 901 is disposed on the light-exiting side of the polarizing layer 110, and the second anti-reflection layer 902 is disposed on the side of the first anti-reflection layer 901 away from the polarizing layer 110. The refractive index of the first anti-reflection layer 901 is lower than that of the second anti-reflection layer 902.

[0103] It should be noted that Figure 11 The reflective layer and anti-reflective layer in the structure shown are Figure 6The structure, material, principle, preparation method and effect of the reflective layer and the anti-reflective layer are similar. The main difference is that the setting position needs to be adjusted according to the luminous principle of top emission and bottom emission. Figure 11 The structure, materials, principles, preparation methods and effects of the reflective layer and the anti-reflective layer in the structure shown are not described in detail. Figure 6 The corresponding text description part.

[0104] In addition, based on the same principle, Figure 12 As shown, it can also be found in Figure 11 On the basis of the anti-reflection layer shown in FIG, the first anti-reflection layer 901 is patterned, and the top view of the obtained graphic structure is similar to that of FIG. Figure 8-10 Similar, so no more illustrations and descriptions are given.

[0105] It is understood that, in the above embodiments, for the sake of illustration and description, Figure 6-7 as well as Figure 11-12 The structures shown include both the second light extraction enhancement layer 80 (i.e., the reflective layer) and the first light extraction enhancement layer 90 (i.e., the anti-reflective layer), but in fact, the display panel may only include one of the second light extraction enhancement layer 80 and the first light extraction enhancement layer 90.

[0106] Exemplary electronic devices

[0107] The present application also provides an electronic device including the display panel described in the exemplary display panel section. The electronic device may be a smartphone, a tablet computer, a digital camera, or the like.

[0108] Furthermore, in the present invention, unless otherwise expressly specified or limited, terms such as "connected," "connected," and "stacked" should be interpreted broadly. For example, they may refer to fixed or detachable connections, or integration; they may refer to direct connection or indirect connection through an intermediate medium; they may refer to internal communication between two elements or interaction between two elements. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0109] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A display panel, characterized in that: include: A light-emitting structure layer, comprising a first electrode, a second electrode, and a light-emitting material layer located between the first electrode and the second electrode; wherein the first electrode is located on the backlight side of the light-emitting structure layer; a polarizing layer, disposed on the light-emitting side of the light-emitting structure layer; a first light extraction enhancement layer, disposed on a side of the polarizing layer away from the light emitting structure layer; an encapsulation layer, disposed on a side of the first light extraction enhancement layer away from the polarizing layer; and a second light extraction enhancement layer, disposed on the backlight side of the light emitting structure layer, the second light extraction enhancement layer being configured to reflect part of the light emitted by the light emitting structure layer to the light extraction side of the light emitting structure layer; The second light extraction enhancement layer includes a reflective layer provided on a side of the first electrode close to the luminescent material layer; the reflective layer is at least partially doped into a surface of the first electrode close to the luminescent material layer.

2. The display panel according to claim 1, wherein: The reflective layer is a nano-aluminum thin film layer.

3. The display panel according to claim 2, wherein: The thickness of the nano-aluminum film layer is 100-300 nanometers.

4. The display panel according to claim 1, wherein: The first light extraction enhancement layer includes a first anti-reflection layer and a second anti-reflection layer, wherein the first anti-reflection layer is arranged on the light extraction side of the polarizing layer, and the second anti-reflection layer is arranged on the side of the first anti-reflection layer away from the polarizing layer; The refractive index of the first anti-reflection layer is smaller than the refractive index of the second anti-reflection layer.

5. The display panel according to claim 4, wherein: A planarization layer is provided on the light-emitting side of the polarizing layer, a second anti-reflection layer is provided on a side of the planarization layer away from the polarizing layer, and a plurality of grooves are provided on a side of the second anti-reflection layer adjacent to the planarization layer, the first anti-reflection layer includes a plurality of anti-reflection units, and the plurality of anti-reflection units are respectively embedded in the grooves; The refractive index of the first anti-reflection layer is smaller than the refractive index of the second anti-reflection layer. 6 . The display panel according to claim 4 , wherein the refractive index of the first anti-reflection layer is 1.4-1.5, and the refractive index of the second anti-reflection layer is 1.6-1.

9.

7. The display panel according to claim 5, wherein: The light-emitting structure layer includes multiple pixel openings; the orthographic projection of a single anti-reflection unit or multiple adjacent anti-reflection units on the light-emitting structure layer is a fully enclosed pattern or a partially enclosed pattern, and the fully enclosed pattern or the partially enclosed pattern surrounds the pixel openings.

8. The display panel according to claim 4, 5 or 7, characterized in that: The material of the first anti-reflection layer includes silicon dioxide, and the material of the second anti-reflection layer includes silicon nitride or zirconium oxide.

9. The display panel according to claim 8, wherein: The thickness of the first anti-reflection layer and the second anti-reflection layer are both 100-500 nanometers.

10. An electronic device, characterized in that: The display panel comprises the display panel according to any one of claims 1 to 9.

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