Method and apparatus for processing a transparent substrate

Abstract

Aspects of the present disclosure generally relate to methods and apparatuses for processing transparent substrates, such as glass substrates. In one implementation, a film stack for an optical assembly includes a glass substrate including a first surface and a second surface. The film stack includes an assembly function layer formed on the first surface, a hardmask layer formed on the assembly function layer, and a substrate identification layer formed on the hardmask layer. The hardmask layer includes one or more of chromium, ruthenium, or titanium nitride. The film stack includes a backside layer formed on the second surface. The backside layer formed on the second surface includes one or more of a conductive layer or an oxide layer.

Description

[0001] background

[0002] field

[0003] Several aspects of this disclosure generally relate to methods and apparatus for processing transparent substrates such as glass substrates. In one example, the glass substrate is processed before flatbed printing.

[0004] Related technical descriptions

[0005] When attempting to process transparent substrates using lithography methods, operational problems can arise. For example, the substrate's transparency may make it difficult for the lithography machine to identify the substrate in the processing position. As another example, the substrate's transparency makes it difficult to align the substrate under the lithography machine. Difficulty in identifying and aligning the substrate leads to inefficiency, lower die-per-substrate due to misalignment during patterning, increased substrate defects, lower machine throughput, increased machine downtime, and higher operating costs.

[0006] Therefore, there is a need for apparatus and methods that facilitate the use of transparent substrates in flatbed printing processes to help improve efficiency, increase the number of chips per substrate, reduce substrate defects, increase machine output, reduce machine downtime and lower operating costs. Summary of the Invention

[0007] Several aspects of this disclosure generally relate to methods and apparatus for processing transparent substrates such as glass substrates. In one example, the glass substrate is processed before flatbed printing.

[0008] In one embodiment, the film stack for an optical component includes a glass substrate, the glass substrate including a first surface and a second surface. The second surface is opposite to the first surface, and the first surface is disposed above the second surface. The film stack includes a component functional layer formed on the first surface, a hard molding layer formed on the component functional layer, and a substrate identification layer formed on the hard molding layer. The hard molding layer includes one or more of the following: chromium, ruthenium, or titanium nitride. The film stack includes a back-side layer formed on the second surface. The back-side layer formed on the second surface includes one or more of the following: a conductive layer or an oxide layer.

[0009] In one embodiment, a method of processing a film stack for an optical component includes: providing the film stack. The film stack includes: a glass substrate including a first surface and a second surface, the second surface opposite to the first surface, and a plurality of layers formed on the first surface of the glass substrate. The hard molded layers of the plurality of layers include one or more of the following: chromium, ruthenium, or titanium nitride. The method includes: identifying a substrate identification layer of the plurality of layers. The method includes: patterning the film stack to form a tri-layer lithography structure on the plurality of layers. The method includes: etching the tri-layer lithography structure and the plurality of layers to form a first plurality of structures on the first plurality of structures, and a second plurality of structures stacked on the first plurality of structures.

[0010] In one embodiment, a film stack for an optical component includes a glass substrate comprising a first surface and a second surface. The second surface is opposite to the first surface, and the first surface is disposed above the second surface. The film stack includes a plurality of stacks formed on the first surface. Each of the plurality of stacks includes a first plurality of structures formed on the first surface of the glass substrate, and a second plurality of structures stacked on the first plurality of structures. One or more of the first plurality of structures or the second plurality of structures includes one or more of the following: chromium, ruthenium, or titanium nitride. The film stack includes a back-side layer formed on the second surface of the glass substrate. Attached Figure Description

[0011] Therefore, the above-described features of this disclosure can be understood in detail by referring to several embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings only show several common embodiments of this disclosure and should therefore not be considered as limiting the scope of this disclosure, as other equivalent embodiments are permissible.

[0012] Figure 1A This is a partial schematic diagram of a flatbed printing system according to one embodiment.

[0013] Figure 1B This is a partial schematic plan view of a substrate exposed to a flatbed printing process according to one embodiment.

[0014] Figure 1C According to one implementation method Figure 1A A partial schematic diagram of the membrane stack shown.

[0015] Figure 2A One embodiment illustrates a patterned film stack using a flatbed printing process. Figure 1C A partial schematic diagram of the membrane stack shown.

[0016] Figure 2B According to one embodiment, the process of etching a three-layer flatbed printed structure and a substrate identification layer using a first etching operation is illustrated. Figure 2A The membrane stacks shown in the figure.

[0017] Figure 2C According to one embodiment, the hard mold layer is selectively etched using a second etch operation. Figure 2B The membrane stacks shown in the figure.

[0018] Figure 2D According to one embodiment, the substrate identification layer is selectively etched using a third etch operation. Figure 2C The membrane stack shown in the figure.

[0019] Figure 2E According to one embodiment, the component functional layer is selectively etched using a fourth etch operation. Figure 2D The film stack shown in the figure has a fourth etch operation with a binary etch operation.

[0020] Figure 2F One embodiment illustrates the selective etching of the component functional layer using a fourth etch operation. Figure 2D The film stack shown in the figure has a fourth etch operation with an angled etch operation.

[0021] Figure 3 This is a partial schematic diagram of a processing system according to one embodiment.

[0022] For ease of understanding, the same component symbols are used as much as possible to represent common elements in the figures. It is anticipated that elements disclosed in one embodiment can be advantageously used in other embodiments without specific description. Detailed Implementation

[0023] Several aspects of this disclosure generally relate to methods and apparatus for processing transparent substrates such as glass substrates. In one example, the glass substrate is processed before flatbed printing.

[0024] Figure 1A This is a partial schematic diagram of a flatbed printing system 100 according to one embodiment. Figure 1BThis is a partial schematic plan view of a substrate 106 exposed to a lithographic printing process according to one embodiment. It should be understood that the lithographic printing system 100 is an exemplary system and can be used with or modified with other systems to implement various aspects of this disclosure. The lithographic printing system 100 includes a projection unit 102 comprising one or more light sources such as light-emitting diodes (LEDs) or lasers, capable of projecting a write beam 111 to pattern the substrate 106, which has one or more layers 121 to 123 (three layers shown) formed on a first surface 103 of the substrate 106. The write beam 111 is projected in the direction of the one or more layers 121 to 123 formed on the substrate 106. The one or more layers 121 to 123 may include a mask pattern. The substrate 106 and layers 121 to 123 are at least a portion of a film stack 120. One or more layers 121 to 123 may be deposited on the first surface 103 of the substrate 106, for example, using physical vapor deposition, chemical vapor deposition, atomic layer deposition, spin-on nanoparticle process, electroplating process, and / or evaporation process. In one example, physical vapor deposition, electroplating process, or evaporation process is used to form the hard mold layer 122. In one example, physical vapor deposition, chemical vapor deposition, or spin-on nanoparticle process is used to form the substrate identification layer 123. In one example, physical vapor deposition, chemical vapor deposition, or spin-on nanoparticle process is used to form the component functional layer 121.

[0025] Substrate 106 is a transparent substrate. In one embodiment, which may be combined with several other embodiments, substrate 106 is a glass substrate. The substrate may include any suitable material used as part of a flat panel display. In one embodiment, which may be combined with several other embodiments, substrate 106 has dimensions such as diameter in the range of 100 mm to 450 mm. In one example, the size of substrate 106 is 100 mm. In one example, the size of substrate 106 is 150 mm. In one example, the size of substrate 106 is 200 mm. In one example, the size of substrate 106 is 300 mm. In one embodiment, which may be combined with several other embodiments, substrate 106 has dimensions such as diameter in the range of 4 inches to 18 inches. In one example, the size of substrate 106 is about 4 inches. In one example, the size of substrate 106 is about 6 inches. In one example, the size of substrate 106 is about 8 inches. In one example, the size of substrate 106 is about 12 inches.

[0026] In one embodiment, which can be combined with several other embodiments, the thickness of substrate 106 ranges from 150 micrometers (μm) to 850 micrometers (μm). In one example, substrate 106 has a thickness of 200 ± 50 micrometers (μm). In another example, substrate 106 has a thickness of 300 ± 50 micrometers (μm). In another example, substrate 106 has a thickness of 400 ± 50 micrometers (μm). In another example, substrate 106 has a thickness of 500 ± 50 micrometers (μm). In another example, substrate 106 has a thickness of 600 ± 50 micrometers (μm). In another example, substrate 106 has a thickness of 750 ± 50 micrometers (μm). In another example, substrate 106 has a thickness of 800 ± 50 micrometers (μm).

[0027] In one embodiment that can be combined with several other embodiments, the surface width of substrate 106 is 5 mm to 70 mm, such as from 5 mm to 100 mm, such as from 5 mm to 20 mm, or from 50 mm to 60 mm. In one embodiment that can be combined with several other embodiments, the surface length of substrate 106 is from 5 mm to 100 mm, such as from 5 mm to 60 mm, such as from 5 mm to 20 mm, or from 50 mm to 60 mm. In one example, the area of ​​substrate 106 is 30 mm to 60 mm multiplied by 25 mm to 60 mm. One or more of layers 121 to 123 are film layers to be patterned, such as by pattern etching through one or more of layers 121 to 123.

[0028] Film stack 120 includes a photoresist layer 110 formed on layers 121 to 123. The photoresist layer 110 is sensitive to electromagnetic radiation, such as UV, EUV, or deep UV "light". Positive tone photoresist includes portions of the photoresist layer 110 that, when exposed to radiation, are soluble in the photoresist developer applied to the photoresist layer 110 after a pattern has been written into the photoresist layer 110 using electromagnetic radiation. Negative tone photoresist includes portions of the photoresist layer 110 that, when exposed to radiation, are insoluble in the photoresist developer applied to the photoresist layer 110 after a pattern has been written into the photoresist layer 110 using electromagnetic radiation. Negative tone development includes a positive photoresist layer 110 exposed by a bright field mask, wherein the exposed areas are insoluble in organic solvents (e.g., n-butanol) and remain on the substrate 106 after development. The chemical composition of the photoresist layer 110 determines whether it is a positive or negative photoresist.

[0029] During a flatbed printing operation, projection unit 102 projects a write beam 111 in one or more of the directions of one or more layers 121 to 123. When the write beam 111 is projected in one or more of the directions of the layers 121 to 123, the mask-patterned layers 121 to 123 may correspond to a component pattern 112 to be written into the photoresist layer 110. The component pattern 112 may include a component portion 114 of the component pattern 112 written into the photoresist layer 110. The component pattern 112 may correspond to a component to be patterned into the substrate 106 or a film layer disposed on the substrate 106. In other embodiments that may be combined with other embodiments described herein, the component pattern 112 may correspond to one or more components to be patterned into the substrate 106 or a film layer disposed on the substrate 106.

[0030] In one embodiment, which can be combined with other embodiments, the lithographic printing system 100 is manufactured to a size that exposes the entire photoresist layer 110 on the substrate 106 to the write beam 111. In other embodiments, which can be combined with other embodiments described herein, the substrate 106 is supported by a platform 116, which is operatively positioned in a predetermined path under the projection unit 102. The movement of the substrate 106 on the platform 116 can be controlled by a controller 108. The controller 108 is generally designed to facilitate the control and automation of lithographic printing processes based on mask pattern documents. The controller 108 may be coupled to, or communicate with, at least the projection unit 102, the platform 116, and / or the encoder 118. The projection unit 102 and the encoder 118 may provide information about substrate processing and substrate alignment to the controller 108. For example, the projection unit 102 may provide information to the controller 108 to indicate that substrate processing has been completed.

[0031] Platform 116 is configured to move and position substrate 106 along the X and Y axes. As discussed above, substrate 106 is a glass substrate. Several aspects of this disclosure described above and below enable the flatbed printing system 100, including projection unit 102, to recognize that the transparent glass substrate 106 is in position to be scanned and patterned. If the flatbed printing system 100 cannot recognize that substrate 106 is in place, the flatbed printing system 100 may be unable to begin patterning substrate 106 and may display an error message to the operator. Several aspects of this disclosure described above and below also enable substrate 106 to be aligned along the X and Y axes under projection unit 102 of the flatbed printing system 100. Enabling substrate 106 to be recognized by the flatbed printing system 100 and enabling substrate 106 to be aligned relative to the flatbed printing system 100 facilitates the use of transparent substrates in flatbed printing processes, resulting in increased efficiency, increased die count per substrate, reduced substrate defects, increased machine throughput, reduced machine downtime, and lower operating costs.

[0032] Figure 1C According to one implementation method Figure 1A This is a partial schematic diagram of a film stack 120. The film stack 120 is an integrated film stack. The film stack 120 can be patterned and etched for use in optical components such as lens assemblies. The film stack 120 can be combined with a flatbed printing tool of a flatbed printing system for flatbed printing processing of a substrate 106 of the film stack 120. The film stack 120 includes a substrate 106, which is a transparent glass substrate. The substrate 106 includes a first surface 103 and a second surface 104, the second surface 104 being opposite to the first surface 103. The first surface 103 is disposed above the second surface 104. In one example, the first surface 103 is the front surface of the substrate 106, and the second surface 104 is the back surface of the substrate 106.

[0033] One or more layers 121 to 123 formed on the first surface 103 include: a component functional layer 121 formed on the first surface 103; a rigid molding layer 122 formed on the upper surface of the component functional layer 121; and a substrate identification layer 123 formed on the upper surface of the rigid molding layer 122. The film stack 120 also includes one or more back-side layers 124 (one shown) formed on the second surface 104 of the substrate 106. The one or more back-side layers 124 formed on the second surface 104 include back-side layers 124 formed on the second surface 104.

[0034] In one embodiment that can be combined with several other embodiments, the back side layer 124 is omitted from the membrane stack 120.

[0035] The component functional layer 121 is a film layer. The component functional layer 121 includes a thickness T1 in the range of 20 nm to 500 nm. The component functional layer 121 includes one or more of the following: titanium dioxide (TiO2), niobium monoxide (NbO), and / or niobium pentoxide (Nb2O5). In one example, the component functional layer 121 includes titanium dioxide (TiO2) and niobium monoxide (NbO). The crystalline phase of the component functional layer 121 is amorphous or crystalline. At least one of one or more layers 121 to 123 includes one or more of the following: chromium, ruthenium, and / or titanium nitride.

[0036] In one embodiment that can be combined with other embodiments, the component functional layer 121 is omitted from the film stack 120, such that the rigid molding layer 122 is formed on the first surface 103 of the substrate 106.

[0037] The rigid stencil layer 122 facilitates alignment of the substrate 106 during lithography and / or etching of the film stack 120. The rigid stencil layer 122 is a film layer. The rigid stencil layer 122 comprises one or more of the following: chromium, ruthenium, titanium, and / or nitrogen. In one example, the rigid stencil layer 122 comprises titanium nitride (TiN). The rigid stencil layer 122 is located between the substrate identification layer 123 and the component functional layer 121. In one embodiment, which may be combined with several other embodiments, the rigid stencil layer 122 comprises chromium and ruthenium. The rigid stencil layer 122 comprises a thickness T2 in the range of 10 nm to 400 nm. Aspects of the rigid stencil layer 122, such as chromium and / or ruthenium, contribute to providing contrast of the rigid stencil layer 122 with respect to one or more of the following: the component functional layer 121, the glass substrate 106 (which is transparent), and / or the back-side layer 124. The contrast of the hard stencil layer 122 helps align the substrate 106 relative to the projection unit 102 of the flatbed printing system 100 along the X and Y axes during the flatbed printing process. In one embodiment, which can be combined with several other embodiments, the hard stencil layer 122 includes one or more alignment marks formed on the hard stencil layer 122, such as raised areas, recesses, or contrasting colors. The flatbed printing system 100 can detect the alignment marks when the substrate 106 is aligned relative to the flatbed printing system 100 for the flatbed printing process. Aspects of the hard stencil layer 122 also facilitate the etching of the film stack 120.

[0038] The substrate identification layer 123 at least facilitates the patterning of the film stack 120, the etching of the film stack 120, and / or the identification of the substrate 106 by the flatbed printing system 100. The substrate identification layer 123 is a film layer. The substrate identification layer 123 comprises silicon. In one example, the substrate identification layer 123 comprises one or more of the following: silicon dioxide (SiO2), silicon oxynitride (SiON), silicon nitride (SiN), amorphous silicon, polycrystalline silicon, and / or silicon-doped materials. The substrate identification layer 123 includes a thickness T3 in the range of 10 nm to 200 nm. In one embodiment, which can be combined with several other embodiments, the substrate identification layer 123 includes one or more identification marks formed on the substrate identification layer 123, such as raised portions, recesses, or contrasting colors. The flatbed printing system 100 can detect the identification marks when the substrate 106 is positioned relative to the flatbed printing system 100 for flatbed printing processing.

[0039] Back side layer 124 is a film layer. Back side layer 124 may include one or more of the following: a back side protective layer, a second component functional layer, and / or a substrate identification layer. Back side layer 124 may protect the second surface 104 and / or facilitate the identification of substrate 106 by the flatbed printing system 100. Back side layer 124 may be a component functional layer. In one embodiment that may be combined with other embodiments, back side layer 124 includes one or more identification marks formed on back side layer 124, such as raised portions, recesses, or contrasting colors. The flatbed printing system 100 may detect the identification marks when substrate 106 is in place relative to the flatbed printing system 100 for flatbed printing processing. Back side layer 124 is an oxide layer or a conductive layer. Back side layer 124 includes one or more of silicon or silicon oxide. Back side layer 124 includes a thickness T4 in the range of 10 nm to 600 nm.

[0040] Figures 2A to 2F Illustrations of processing according to various implementation methods Figure 1C A partial schematic diagram of the operation flow of method 200 for the membrane stack 120 shown.

[0041] Figure 2A The illustration depicts the patterning of film stack 120 using a flatbed printing process according to one embodiment. Figure 1CThis is a partial schematic diagram of the film stack 120. The film stack 120 is provided, and a three-layer planar printed structure 201 is patterned and formed on the film stack 120 using tri-layer patterning. The three-layer planar printed structure 201 includes a first layer 211 and a second layer 212. The first layer 211 is formed on the upper surface of the substrate identification layer 123, and the second layer 212 is formed on the upper surface of the first layer 211. The first layer 211 includes an organic planarization layer, and the second layer 212 includes an anti-refractive coating. The anti-refractive coating includes silicon. The first layer 211 has a thickness T5 in the range of 60 nm to 1 micrometer. The second layer 212 has a thickness T6 in the range of 15 nm to 100 nm.

[0042] The three-layer flatbed printed structure 201 includes a plurality of photoresist structures 217 patterned and formed on the upper surface of the second layer 212. The photoresist structures have a thickness T7 in the range of 10 nm to 3 micrometers.

[0043] According to method 200, a first etching operation is performed to etch a three-layer lithographic printed structure 201 and a substrate identification layer 123. The three-layer lithographic printed structure 201 is etched to remove a plurality of photoresist structures 217, a second layer 212, and a first layer 211. The substrate identification layer 123 is etched to open a portion 223A of the substrate identification layer 123, which is vertically aligned between the photoresist structures 217 or vertically aligned outside the photoresist structures 217.

[0044] During the first etching operation, the photoresist structure 217, the portion of the first layer 211 perpendicularly aligned with the photoresist structure 217, the portion of the second layer 212 perpendicularly aligned with the photoresist structure 217, and the portion 223B of the substrate identification layer 123 perpendicularly aligned with the photoresist structure 217 are etched at a first etching rate. Furthermore, during the first etching operation, the portions of the first layer 211 perpendicularly aligned between and outside the photoresist structures 217, the portions of the second layer 212 perpendicularly aligned between and outside the photoresist structures 217, and the portion 223A of the substrate identification layer 123 perpendicularly aligned between and outside the photoresist structures 217 are etched at a second etching rate, where the second etching rate differs from the first etching rate. In one embodiment that can be combined with other embodiments, the ratio of the second etching rate to the first etching rate is 2:1.

[0045] During the first etching operation, a component including fluorine is used to etch the second layer 212. In one example, the component used to etch the second layer 212 includes one or more of the following: carbon tetrafluoride (CF4), trifluoromethane (CHF3), difluoromethane (CH2F2), fluoromethane (CH3F), sulfur hexafluoride (SF6), and / or nitrogen trifluoride (NF3). During the first etching operation, a component including oxygen and / or hydrogen is used to etch the first layer 211. In one example, the component used to etch the first layer 211 includes one or more of the following: oxygen (O2), dihydrogen (H2), carbon monoxide (CO), and / or carbon dioxide (CO2). In one embodiment that can be combined with several other embodiments, the component used to etch the first layer 211 includes a passivation composition. In one example, the passivation composition includes one or more of the following: methane (CH4), ethylene (C2H4), nitrogen (N2), dichloride (Cl2), and / or hydrogen bromide (HBr). The passivation components help maintain the critical dimensions and profile of the film stack 120. In one example, during the etching of the first layer 211, residual portions of the photoresist structure 217 left on the second layer 212 are removed.

[0046] During the first etching operation, a portion 223A of the substrate identification layer 123 is etched using a component including fluorine. In one example, the component used to etch the portion 223A of the substrate identification layer 123 includes one or more of the following: carbon tetrafluoride (CF4), trifluoromethane (CHF3), sulfur hexafluoride (SF6), and / or nitrogen trifluoride (NF3). In one example, during the etching of the portion 223A of the substrate identification layer 123, any remaining portion of the second layer 212 left on the first layer 211 is removed. Figure 2B According to one embodiment, the three-layer flatbed printed structure 201 and the substrate identification layer 123 are etched using a first etching operation. Figure 2A The film stack 120 is illustrated. A portion 223A of the substrate recognition layer 123 is opened to form an opening 225 between portions 223B and outside portions 223B. A third plurality of structures are formed between the openings 225 and on the upper surface of the hard mold layer 122. Before the first etching operation, portions 223B are vertically aligned with the photoresist structure 217 (e.g., ...). Figure 2A (As shown in the illustration) helps to form such Figure 2B The third plurality of structures 223B is illustrated. The following describes the first plurality of structures of the component functional layer 121 and the second plurality of structures of the hard mold layer 122.

[0047] According to method 200, a second etching operation is performed on the film stack 120. During the second etching operation, a hard mold layer 122 is selectively etched relative to a third plurality of structures 223B of the substrate recognition layer 123 to open a portion 222A of the hard mold layer 122. During the second etching operation, a component including one or more of chlorine and / or oxygen is used to etch the portion 222A of the hard mold layer 122. In one example, the component used to etch the portion 222A includes one or more of the following: dichloride (Cl2), boron trichloride (BCl3) and / or silicon tetrachloride (SiCl4), and / or one or more of the following: oxygen (O2), carbon monoxide (CO), carbon dioxide (CO2) and / or ozone (O3). In one example, during the etching of the portion 222A of the hard mold layer 122, residual portions of the first layer 211 remaining on the third plurality of structures 223B are removed.

[0048] Figure 2C According to one embodiment, the hard mold layer 122 is selectively etched using a second etch operation. Figure 2B The film stack 120 is illustrated. A portion 222A of the hard mold layer 122 is etched to form a second plurality of structures 222B on the upper surface of the component functional layer 121. The second plurality of structures 222B are hard mold structures. The portion 222B of the hard mold layer 122 is vertically aligned with a third plurality of structures 223B to facilitate patterning and formation of the second plurality of structures 222B. An opening 226 is also formed between the second plurality of structures 222B. Each hard mold structure 222B of the second plurality of structures 222B is disposed below the hard mold structure 223B of the third plurality of structures 223B. The third plurality of structures 223B is supported on the second plurality of structures 222B.

[0049] According to method 200, a third etching operation is performed on the film stack 120. The third etching operation may include dry etching or wet etching. A third plurality of structures 223B of the substrate recognition layer 123 are selectively etched relative to the component functional layer 121 to remove the third plurality of structures 223B.

[0050] During the third etching operation, a third plurality of structures 223B of the substrate identification layer 123 are etched using one or more components including chlorine or fluorine. In one example, the components used to etch the third plurality of structures 223B include one or more of dichloride (Cl2), boron trichloride (BCl3), and / or silicon tetrachloride (SiCl4), and one or more of carbon tetrafluoride (CF4), trifluoromethane (CHF3), difluoromethane (CH2F2), fluoromethane (CH3F), sulfur hexafluoride (SF6), and / or nitrogen trifluoride (NF3). In one example, the components used to etch the third plurality of structures 223B also include diluents, which include one or more of argon (Ar), helium (He), and / or krypton (Kr). In one example, the components used to etch the third plurality of structures 223B also include passivation components, which include one or more of methane (CH4), ethylene (C2H4), nitrogen (N2), dichloride (Cl2), and / or hydrogen bromide (HBr). The passivation components help maintain the critical size and profile of the membrane stack 120.

[0051] Figure 2D According to one embodiment, the substrate identification layer 123 is selectively etched using a third etch operation. Figure 2C The film stack 120 is shown in the figure. The third plurality of structures 223B of the substrate identification layer 123 has been removed.

[0052] According to method 200, a fourth etching operation is performed on the film stack 120. The fourth etching operation includes a binary etching operation or an angled etching operation. The fourth etching operation includes dry etching or wet etching. During the fourth etching operation, a portion 221A of the component functional layer 121 between the second plurality of structures 222B and outside the second plurality of structures 222B is etched relative to the second plurality of structures 222B to open the portion 221A of the component functional layer 121. During the fourth etching operation, the portion 221A of the component functional layer 121 is etched using a component including one or more of chlorine or fluorine. In one example, the component used to etch the portion 221A includes one or more of dichloride (Cl2), boron trichloride (BCl3) and / or silicon tetrachloride (SiCl4), and one or more of carbon tetrafluoride (CF4), trifluoromethane (CHF3), difluoromethane (CH2F2), fluoromethane (CH3F), sulfur hexafluoride (SF6) and / or nitrogen trifluoride (NF3). In one example, the composition used for etching portion 221A also includes a diluent, which includes one or more of the following: argon (Ar), helium (He), and / or krypton (Kr). In one example, the composition used for etching portion 221A also includes a passivation component, which includes one or more of the following: methane (CH4), ethylene (C2H4), nitrogen (N2), dichloride (Cl2), and / or hydrogen bromide (HBr). The passivation component helps maintain the critical dimensions and profile of the film stack 120. In one example, during the etching of portion 221A, residual portions of the substrate identification layer 123 (e.g., a third plurality of structures 223B) remaining on the second plurality of structures 222B are removed.

[0053] Figure 2E According to one embodiment, the component functional layer 121 is selectively etched using a fourth etch operation. Figure 2D The film stack 120 illustrated herein includes a fourth etch operation comprising a binary etch operation. The binary etch operation includes reactive ion etching. In reactive ion etching, ions 290 (shown in...) Figure 2DThe first plurality of structures 221A of the component functional layer 121 are guided toward the component functional layer 121 and parallel to axis 291, which extends perpendicularly to the first surface 103 of the substrate 106. A binary etching operation opens a portion 221A of the component functional layer 121 to form an opening 228 and a first plurality of structures 239 between the openings 228. The first plurality of structures 239 are formed on the first surface 103 of the substrate 106 and between the first surface 103 and a second plurality of structures 222B. The perpendicular alignment of the first plurality of structures 239 of the component functional layer 121 with the second plurality of structures 222B facilitates patterning and forming of the first plurality of structures 239. Each hard molded structure 239 of the first plurality of structures 239 includes a first side surface 232 and a second side surface 233, both of which extend perpendicularly to the first surface 103 of the substrate 106. The first side surface 232 is aligned with the first side surface 234 of the adjacent structure 222B of the second plurality of structures 222B, and the second side surface 233 is aligned with the second side surface 235 of the adjacent structure 222B of the second plurality of structures 222B. In one embodiment that can be combined with other embodiments, the first side surface 232 and the second side surface 233 are parallel to the axis 291. The second plurality of structures 222B are supported on the first plurality of structures 239 to form a plurality of stacks 260 on the first surface 103.

[0054] Figure 2F According to one embodiment, the component functional layer 121 is selectively etched using a fourth etch operation. Figure 2D The film stack 120 illustrated here includes a fourth etch operation with an angled etch operation. The angled etch operation includes physical ion bombardment. Ions 295 (illustrated in [illustration location]) are guided toward the component functional layer 121 at a first angle A1 relative to the first surface 103 of the substrate 106. Figure 2D (Middle). A first angle A1 is measured relative to axis 291. The first angle A1 is between 0 degrees and 90 degrees. In one embodiment that can be combined with several other embodiments, the first angle A1 is in the range of 0 degrees to 60 degrees. An angled etching operation opens a portion 221A of the component functional layer 121 to form an angled opening 240 and a plurality of angled hard mold structures 241. The perpendicular alignment of the plurality of angled hard mold structures 241 of the component functional layer 121 with a second plurality of structures 222B facilitates patterning and formation of the plurality of angled hard mold structures 241.

[0055] Each of the plurality of angled hard mold structures 241 includes a first angled side surface 242 and a second angled side surface 243, which extend from the first surface 103 at a second angle A2. The second angle A2 is between 0 degrees and 90 degrees. In one embodiment that can be combined with other embodiments, the second angle A2 is in the range of 30 degrees to 70 degrees. The second angle A2 is greater than the first angle A1. The first angle A1 and the second angle A2 together are approximately 90 degrees. The first angled side surface 242 is angled relative to the first side surface 234 of the adjacent hard mold structure 222B of the second plurality of structures 222B. The second angled side surface 243 is angled relative to the second side surface 235 of the adjacent hard mold structure 222B of the second plurality of structures 222B.

[0056] In one embodiment, which can be combined with several other embodiments, a fifth etching operation is performed after the fourth etching operation to remove the second plurality of structures 222B of the hard mold layer 122. In one example, the second plurality of structures 222B are selectively etched relative to the substrate 106. The fifth etching operation includes wet etching or dry etching. In one example, wet etching uses an ingredient including ammonium nitrate (CAN). In one example, dry etching includes one or more of the following: dichloride (Cl2) and / or oxygen (O2).

[0057] In an example where binary etching is used in the fourth etching operation, the second plurality of structures 222B is removed from the first plurality of structures 239 (e.g., after the fifth etching operation) Figure 2E (As illustrated) is removed. After the fifth etching operation, the first plurality of structures 239 (as shown) are removed. Figure 2E (As illustrated) Remains on the first surface 103 of the substrate 106. In an example using angled etching in the fourth etching operation, the second plurality of structures 222B are removed from the plurality of angled hard mold structures 241 (as shown in the illustration) after the fifth etching operation. Figure 2F (As shown in the illustration) is removed. After the fifth etching operation, multiple angled hard mold structures 241 (such as...) are removed. Figure 2F (As illustrated) Remains on the first surface 103 of substrate 106. In one embodiment that can be combined with other multiple embodiments, one or more of the first, second, third, fourth, and / or fifth etching operations are simultaneously combined and / or performed. In one example, the third and fourth etching operations are combined into a single etching operation to simultaneously remove portions 221A of the third plurality of structures 223B and component functional layers 121 using the same components for etching.

[0058] In one embodiment, which can be combined with several other embodiments, the component functional layer 121 is omitted from the film stack 120, such that after a third etching operation, the second plurality of structures 222B are formed on the first surface 103 of the substrate 106. In one example, the fourth etching operation is omitted, and the fifth etching operation etches the hard mold layer 122 and the substrate 106. In such an example, the fifth etching operation removes portions of the second plurality of structures 222B and the substrate 106 perpendicularly aligned between the second plurality of structures 222B to form recesses in the substrate 106.

[0059] Several aspects of the second plurality of structures 222B, such as chromium, ruthenium, and / or titanium nitride, contribute to the selective etching of the component functional layer 121 relative to the second plurality of structures 222B. For example, when using an angled etching operation, the chromium, titanium nitride, and / or ruthenium of the second plurality of structures 222B contribute to the angled selective etching of the component functional layer 121 to form a first angled side surface 242 and a second angled side surface 243. For example, chromium, titanium nitride, and / or ruthenium contribute to the use of a thinner hard mold layer 122 to help reduce or eliminate the effect of the 3-D shadow effect on the critical dimensions of the film stack 120 during angled etching. For example, during etching portion 221A, chromium, titanium nitride, and / or ruthenium also contribute to selective etching and a favorable etching rate to help accurately control the critical dimensions of the film stack 120. Angled etching operations also promote a light vector favorable to the film stack 120.

[0060] Figure 3 This is a partial schematic diagram of a processing system 300 according to one embodiment. The processing system 300 includes a plurality of process chambers 301 to 305 and a transfer chamber 312. The transfer chamber 312 includes a transfer robot 316 disposed in a transfer space 318 within the transfer chamber 312. The processing system 300 also includes a factory interface 314. The factory interface 314 can be used to provide the film stack 120, as discussed above, including the substrate 106, to the processing system 300. The processing system 300 receives the film stack 120, and the transfer robot 316 facilitates the transfer of the film stack 120 into, out of, or between the plurality of process chambers 301 to 305. In one example, processing system 300 receives film stack 120 from second system 322, which forms layers 121 to 123 on a first surface 103 of substrate 106 and forms one or more back-side layers 124 on a second surface 104 of substrate 106.

[0061] The flatbed printing chamber 301 includes a flatbed printing system (such as the flatbed printing system 100 discussed above) that patternes and forms a three-layer flatbed printed structure 201 on the film stack 120. This disclosure contemplates different systems, such as a third system, that can pattern the three-layer flatbed printed structure 201 on the film stack 120 before it is received by the processing system 300. The first etching chamber 302 performs etching regarding… Figure 2A and Figure 2B The first etching operation discussed. The first etching chamber 302 performs the etching operation related to... Figure 2A and Figure 2B The first etching operation is discussed. The second etching chamber 303 performs the etching operation related to... Figure 2B and Figure 2C The second etching operation is discussed. The third etching chamber 304 performs the etching operation related to... Figure 2C and Figure 2D The third etching operation is discussed. The fourth etching chamber 305 is used for etching related to... Figure 2D , Figure 2E and Figure 2F The fourth etching operation is discussed. This disclosure considers a single etching chamber capable of performing one or more of the first through fourth etching operations.

[0062] Processing system 300 includes a controller 320, which communicates with one or more of the following: processing system 300, a second processing system 322, and / or a third processing system. Controller 320 includes a non-transitory computer-readable medium storing instructions that, when executed by a processor of controller 320, cause one or more of the operations described herein. In one embodiment, which may be combined with other embodiments, when executed by a processor, the instructions cause a plurality of layers 121 to 123 to be formed on a first surface 103 of substrate 106 and cause a back-side layer 124 to be formed on a second surface 104. In one embodiment, which may be combined with other embodiments, when executed by a processor, the instructions cause a three-layer lithographic printed structure 201 to be patterned and formed on a film stack 120 having substrate 106. In one embodiment, which may be combined with other embodiments, when executed by a processor, the instructions cause one or more of the following to be performed: a first etching operation, a second etching operation, a third etching operation, a fourth etching operation, and / or a fifth etching operation. In one embodiment that can be combined with other implementations, when executed by a processor, the instructions cause one or more operations of method 200 to be performed.

[0063] The benefits of this disclosure include: using a transparent glass substrate to pattern the glass substrate in a flatbed printing system; facilitating flatbed printing machine recognition of the glass substrate; improving the contrast of at least one hard mold layer relative to other hard mold layers and / or the glass substrate; improving the alignment of the glass substrate relative to the flatbed printing machine; facilitating angled etching operations; increasing efficiency; increasing the number of grains per substrate; reducing substrate defects; increasing machine throughput; reducing machine downtime; and reducing operating costs.

[0064] This disclosure includes, among other aspects, a glass substrate; one or more layers formed on a first surface of the glass substrate; one or more back-side layers formed on a second surface of the glass substrate; at least one hard mold layer comprising chromium, ruthenium, and / or titanium nitride; a hard mold layer comprising chromium, ruthenium, and / or titanium nitride between a component functional layer and a substrate identification layer; and angled etching operations. It may be appreciated that one or more aspects disclosed herein may be combined. Furthermore, it may be appreciated that one or more aspects disclosed herein may include some or all of the foregoing benefits.

[0065] While the foregoing describes several embodiments of this disclosure, many other and further embodiments of this disclosure can be devised without departing from the basic scope of this disclosure. This disclosure also considers that one or more aspects of the embodiments described herein may replace one or more of the other aspects. The scope of this disclosure is defined by the appended claims.

Claims

1. A film stack for an optical component, comprising: A transparent substrate includes a first surface and a second surface, the second surface being opposite to the first surface, and the first surface being disposed above the second surface; A component functional layer is formed on the first surface, wherein the component functional layer comprises one or more of the following: titanium dioxide or niobium monoxide; A hard molding layer is formed on the functional layer of the component, the hard molding layer comprising one or more of the following: chromium, ruthenium, or titanium nitride; A substrate identification layer is formed on the hard molding layer; and A back-side layer is formed on the second surface, the back-side layer comprising one or more of the following: a conductive layer or an oxide layer.

2. The film stack of claim 1, wherein the substrate recognition layer comprises silicon.

3. The film stack of claim 1, wherein the hard mold layer has a thickness in the range of 10 nm to 400 nm.

4. The membrane stack as claimed in claim 3, wherein: The component functional layer contains a thickness ranging from 20 nm to 500 nm; and The substrate identification layer has a thickness ranging from 10 nm to 200 nm.

5. The film stack of claim 1, wherein the back-side layer formed on the second surface comprises one or more of the following: silicon or silicon oxide.

6. The film stack of claim 5, wherein the back-side layer has a thickness in the range of 10 nm to 600 nm.

7. A method for processing a film stack for optical components, comprising the following steps: The membrane stack is provided, the membrane stack comprising: A transparent substrate includes a first surface and a second surface, wherein the second surface is opposite to the first surface; and Multiple layers are formed on the first surface of the transparent substrate, the multiple layers comprising: A component functional layer is formed on the first surface, wherein the component functional layer comprises one or more of the following: titanium dioxide or niobium monoxide; A hard molding layer, formed on the functional layer of the component, the hard molding layer comprising one or more of the following: chromium, ruthenium, or titanium nitride; and A substrate identification layer is formed on the hard molding layer; and A back-side layer is formed on the second surface, the back-side layer comprising one or more of the following: a conductive layer or an oxide layer; Substrate identification layer for identifying the multiple layers; Patterning the film stack to form a three-layer flatbed printed structure on the plurality of layers; and The three-layer flatbed printed structure and the plurality of layers are etched to form a first plurality of structures on the first surface of the transparent substrate, and a second plurality of structures stacked on the first plurality of structures.

8. The method of claim 7, wherein etching the plurality of layers comprises: selectively etching a component functional layer formed on the first surface of the transparent substrate relative to the second plurality of structures, the etching comprising binary etching, and the binary etching comprising reactive ion etching.

9. The method of claim 7, further comprising the step of: prior to the patterning, aligning the film stack relative to a flatbed printing system using one or more alignment marks formed on the rigid mold layer.

10. The method of claim 7, wherein etching the plurality of layers comprises: selectively etching component functional layers formed on the first surface of the transparent substrate relative to the second plurality of structures, and the etching comprises angular etching.

11. The method of claim 10, wherein the angled etching comprises physical ion bombardment.

12. The method of claim 7, wherein the back-side layer comprises one or more of the following: silicon or silicon oxide.

13. The method of claim 12, wherein the second plurality of structures comprises a thickness in the range of 10 nm to 400 nm.

14. The method of claim 7, wherein: The three-layer flatbed printing structure includes: The first layer is formed on the substrate identification layer. The second layer is formed on top of the first layer, and Multiple photoresist structures are formed on the second layer.

15. The method of claim 14, wherein etching the three-layer flatbed printed structure and the plurality of layers comprises the following steps: At a first etching rate, the plurality of photoresist structures, the portion of the first layer perpendicularly aligned with the photoresist structure, the portion of the second layer perpendicularly aligned with the photoresist structure, and the portion of the substrate identification layer perpendicularly aligned with the photoresist structure are etched; and At a second etching rate different from the first etching rate, the portions of the first layer vertically aligned between the photoresist structures, the portions of the second layer vertically aligned between the photoresist structures, and the portions of the substrate identification layer vertically aligned between the photoresist structures are etched.

16. The method of claim 15, wherein the second etching rate is a 2:1 ratio to the first etching rate.

17. A film stack for an optical component, comprising: A transparent substrate includes a first surface and a second surface, the second surface being opposite to the first surface, and the first surface being disposed above the second surface; Multiple stacks are formed on the first surface, each of the multiple stacks comprising: A first plurality of structures are formed on the first surface of the transparent substrate, and A second plurality of structures are stacked on top of the first plurality of structures, wherein one or more of the first plurality of structures or the second plurality of structures include: A component functional layer, wherein the component functional layer comprises one or more of the following: titanium dioxide or niobium monoxide; A hard molding layer is formed on the functional layer of the component, the hard molding layer comprising one or more of the following: chromium, ruthenium, or titanium nitride; and A substrate identification layer is formed on the hard molding layer; and A back-side layer is formed on the second surface of the transparent substrate.

18. The membrane stack of claim 17, wherein each of the second plurality of structures comprises a first angled side surface and a second angled side surface.

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