Si-GaN suspended waveguide single-mode laser and preparation method, electric control system and method

Abstract

The present invention discloses a Si-GaN suspended waveguide single-mode laser and a preparation method, an electric control system and method. The laser uses a silicon-based nitride wafer as a carrier, and sequentially arranges a silicon substrate layer, an aluminum nitride layer, an N-type gallium nitride layer, a quantum well layer, a P-type gallium nitride layer and an electrode arranged on the upper surface of the gallium nitride layer from bottom to top. The cantilever beam and the electrode brackets on both sides constitute the device body, and the electrode structure adopts a structure in which the cantilever beam cooperates with the support body directly below the electrode. The present invention uses a photolithography process and an ICP etching process on the nitride material on the silicon substrate to realize the upper and lower stratification of the pin support structure on both sides to achieve the purpose of controlling the current conduction, and uses an evaporation method to prepare an Au electrode structure. The present invention uses a spectrometer to perform spectral analysis on the emitted laser under optical excitation conditions, and the power supply regulates the current to introduce Joule heat to form a negative feedback mechanism, thereby realizing the regulation of the mode of the emitted laser.

Description

Technical Field

[0001] The invention belongs to the field of laser technology and relates to a Si-GaN suspended waveguide single-mode laser and a preparation method, and an electrical control system and method. Background Art

[0002] Since its birth, GaN-based semiconductor lasers have been widely used in various fields due to their advantages such as high photoelectric conversion efficiency, wide wavelength coverage, long service life, and direct modulation. Compared with traditional resonant cavities, the photons in optical microcavities interact with the atoms in the cavity through quantum interactions, which greatly enhances the probability of spontaneous radiation of atoms and significantly reduces the oscillation threshold of the microcavity. The development of micromachining technologies such as lithography and reactive ion etching has made it possible to design and prepare GaN optical microcavities. Optoelectronic devices based on GaN microcavities, such as lasers and detectors, have attracted much attention. However, the current laser devices are all multi-mode, and their working modes are relatively fixed after the microcavity structure is fixed, which reduces the operability of GaN ultraviolet lasers in practical applications. Reducing the size of the microcavity and designing a coupled cavity are some of the current means to achieve spectral regulation, but real-time regulation of the laser is still not possible. In this patent, the photothermal effect is used to control the laser output light in real time, and the preparation of an electrically controllable single-mode laser is achieved through a negative feedback mechanism. For suspended GaN microdisk lasers, the introduction of electrodes is somewhat difficult due to the suspended structure. This patent designs a structure that matches the cantilever beam with the electrode pin bracket, and at the same time, combines the characteristics of GaN to construct a unique electrode pin to control the conduction of current.

[0003] How to utilize the photothermal effect and negative feedback mechanism to electrically regulate the output laser characteristics of the GaN laser to achieve better performance is the problem to be solved by the present invention. Summary of the invention

[0004] Technical problem: The present invention provides a method for introducing a cantilever beam electrode structure into a Si-GaN suspended microdisk, and cooperates with a spectrometer to perform spectral analysis on the emitted laser and a power supply to adjust the current to form a negative feedback mechanism to achieve electro-optical regulation of the laser microdisk. This is a method for preparing the above-mentioned single-mode laser with good processability and stable regulation mechanism.

[0005] Technical solution: A Si-GaN suspended waveguide single-mode laser of the present invention comprises a first pin electrode, a second pin electrode, a cantilever beam electrode and a silicon substrate, wherein the first pin electrode is arranged on the silicon substrate via a first supporting structure, the second pin electrode is arranged on the silicon substrate via a second supporting structure, a cantilever beam is arranged between the first supporting structure and the second supporting structure, the cantilever beam electrode is arranged on the cantilever beam, and the cantilever beam electrode is connected to the second pin electrode.

[0006] Further, the first supporting structure includes: a first pin supporting an N-type gallium nitride layer and a first silicon column; the first silicon column is disposed on the silicon substrate, the first pin supporting an N-type gallium nitride layer is disposed on the first silicon column, and the first pin electrode is disposed on the first pin supporting an N-type gallium nitride layer;

[0007] The second supporting structure comprises: a second pin supporting a P-type gallium nitride layer, a second pin supporting a quantum well layer, a second pin supporting an N-type gallium nitride layer, and a second silicon pillar; the second silicon pillar is disposed on the silicon substrate, the second pin supporting an N-type gallium nitride layer is disposed on the second silicon pillar, the second pin supporting a quantum well layer is disposed on the second pin supporting an N-type gallium nitride layer, the second pin supporting a P-type gallium nitride layer is disposed on the second pin supporting a quantum well layer, and the second pin electrode is disposed on the second pin supporting a P-type gallium nitride layer;

[0008] The cantilever beam includes: a cantilever beam supporting a P-type gallium nitride layer and a cantilever beam N-type gallium nitride layer; one end of the cantilever beam N-type gallium nitride layer is connected to the first pin supporting the N-type gallium nitride layer, and the other end is connected to the second pin supporting the N-type gallium nitride layer; the cantilever beam supporting the P-type gallium nitride layer is arranged on the cantilever beam N-type gallium nitride layer, the cantilever beam supporting the P-type gallium nitride layer is connected to the second pin supporting the P-type gallium nitride layer, the cantilever beam electrode is arranged on the cantilever beam supporting the P-type gallium nitride layer, and the cantilever beam electrode is connected to the second pin electrode.

[0009] Furthermore, it also includes an aluminum nitride layer, which is arranged at the bottom of the cantilever beam N-type gallium nitride layer.

[0010] Accordingly, a method for preparing a Si-GaN suspended waveguide single-mode laser comprises the following steps:

[0011] Step 1: Spin-coat photoresist on the GaN surface of the GaN-on-Si wafer and define the pattern of the hole structure on the spin-coated photoresist layer;

[0012] Step 2: Etch the nitride layer downward until the upper surface of the silicon substrate layer, and then continue etching downward to copy the pattern onto silicon, thereby transferring the pattern defined in the first step to the gallium nitride layer of the silicon-based nitride wafer, obtaining two disk structures connected by cantilever beams, and etching out the patterns corresponding to the first pin support, the second pin support, and the cantilever beam support;

[0013] Step 3: Spin-coat photoresist on the surface of the substrate prepared in the second step, define a pattern corresponding to the second pin support and the cantilever beam support on the spin-coated photoresist layer, and etch downward to the surface of the N-type gallium nitride layer on the first pin support and the cantilever beam support connected to the first pin support; obtain a stepped pattern consisting of the first pin support, the cantilever beam support, and the second pin support;

[0014] Step 4: Spin-coat photoresist on the periphery of the overall pattern on the substrate surface prepared in the third step, and then define the first electrode and the second electrode on the first pin support, the second pin support and the upper surface of the cantilever beam support that has not been etched to the surface of the N-type gallium nitride layer, respectively.

[0015] Step 5: Evaporate electrodes on the surface of the first electrode region, the cantilever beam and the surface of the second electrode region to obtain electrodes in the first electrode region, electrodes in the cantilever beam and electrodes in the second electrode region.

[0016] Step 6: Silicon cones are formed in the silicon substrate layer to support the first electrode and the second electrode pins respectively.

[0017] Furthermore, the silicon cone is wet-etched with a mixture of hydrofluoric acid and dilute nitric acid until the bottom of the silicon substrate layer.

[0018] Accordingly, an electrical control system for a Si-GaN suspended waveguide single-mode laser includes a spectrometer, a processor, an optical pump and a power supply, and also includes the above-mentioned Si-GaN suspended waveguide single-mode laser.

[0019] Accordingly, an electrical control method for a Si-GaN suspended waveguide single-mode laser uses a spectrometer to perform spectral analysis on the emitted laser and a power supply to adjust the current to form an electrical control means of a negative feedback mechanism; under the light excitation of optical pumping, the cantilever beam electrode emits stimulated laser, the spectrometer performs spectral analysis on the emitted laser, and sends an instruction execution command to the power supply through a processor, the power supply is respectively connected to the first pin electrode and the second pin electrode, and after adjusting the current size, the power supply sends an execution completion notification to the spectrometer through the processor, and the spectrometer performs spectral analysis on the emitted laser again, and the cycle continues until the spectrum of the emitted laser stabilizes within the specified range.

[0020] Beneficial effects: Compared with the prior art, the present invention has the following advantages:

[0021] The present invention adopts the technology of Si-GaN suspended waveguide single-mode laser with cantilever beam auxiliary electrode pin. Compared with the traditional structure, the introduction of cantilever beam can solve the difficulties caused by the bridging technology in the preparation of electrodes after the device is suspended. The electrode pin structure on the side can effectively improve the convenience of the later drive of the device and improve the practicality of the device. On the other hand, the present invention introduces a spectrometer to perform spectral analysis on the emitted laser and coordinates the power supply to adjust the current to form an electrical control means of a negative feedback mechanism, so as to perform real-time control on the laser emitted laser to improve the reliability of the single-mode laser. In addition, at the same time, in order to control the current conduction between the first electrode and the second electrode, the present invention designs a stepped figure composed of a first pin support, a cantilever beam support, and a second pin support to ensure the effectiveness of the electrical control of the laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 Schematic diagram of the electrical control system of the Si-GaN suspended waveguide single-mode laser in an embodiment of the present invention;

[0023] Figure 2 Schematic diagram of the main view of the Si-GaN suspended waveguide single-mode laser in an embodiment of the present invention;

[0024] Figure 3 Schematic diagram of a top view of a Si-GaN suspended waveguide single-mode laser in an embodiment of the present invention;

[0025] Figure 4 Schematic diagram of spectrum of single-mode control of Si-GaN suspended waveguide single-mode laser in an embodiment of the present invention;

[0026] Figure 5 The figure is a schematic flow chart of a method for preparing a Si-GaN suspended waveguide single-mode laser in an embodiment of the present invention.

[0027] Figure markings: 1-first pin electrode; 2-second pin electrode; 3-cantilever beam electrode; 4-second pin supports P-type gallium nitride layer; 5-second pin supports quantum well layer; 6-second pin supports N-type gallium nitride layer; 7-cantilever beam supports P-type gallium nitride layer; 8-cantilever beam N-type gallium nitride layer; 9-first pin supports N-type gallium nitride layer; 10-aluminum nitride layer; 11-first silicon column; 12-second silicon column; 13-silicon substrate; 14-spectrometer; 15-processor; 16-optical pumping; 17-power supply. DETAILED DESCRIPTION

[0028] In order to facilitate the understanding of those skilled in the art, the present invention is further described below in conjunction with the accompanying drawings, which is not intended to limit the protection scope of the present invention.

[0029] like Figure 1-3 As shown, a Si-GaN suspended waveguide single-mode laser of the present invention comprises a first pin electrode 1, a second pin electrode 2, a cantilever beam electrode 3 and a silicon substrate 13, wherein the first pin electrode 1 is arranged on the silicon substrate 13 through a first supporting structure, the second pin electrode 2 is arranged on the silicon substrate 13 through a second supporting structure, a cantilever beam is arranged between the first supporting structure and the second supporting structure, the cantilever beam electrode 3 is arranged on the cantilever beam, and the cantilever beam electrode 3 is connected to the second pin electrode 2;

[0030] The first supporting structure includes: a first pin supporting an N-type gallium nitride layer 9 and a first silicon column 11; the first silicon column 11 is disposed on the silicon substrate 13, the first pin supporting an N-type gallium nitride layer 9 is disposed on the first silicon column 11, and the first pin electrode 1 is disposed on the first pin supporting an N-type gallium nitride layer 9;

[0031] The second supporting structure includes: a second pin supporting a P-type gallium nitride layer 4, a second pin supporting a quantum well layer 5, a second pin supporting an N-type gallium nitride layer 6, and a second silicon pillar 12; the second silicon pillar 12 is disposed on the silicon substrate 13, the second pin supporting an N-type gallium nitride layer 6 is disposed on the second silicon pillar 12, the second pin supporting a quantum well layer 5 is disposed on the second pin supporting an N-type gallium nitride layer 6, the second pin supporting a P-type gallium nitride layer 4 is disposed on the second pin supporting a quantum well layer 5, and the second pin electrode 2 is disposed on the second pin supporting a P-type gallium nitride layer 4;

[0032] The cantilever beam includes: a cantilever beam supporting a P-type gallium nitride layer 7 and a cantilever beam N-type gallium nitride layer 8; one end of the cantilever beam N-type gallium nitride layer 8 is connected to the first pin supporting an N-type gallium nitride layer 9, and the other end is connected to the second pin supporting an N-type gallium nitride layer 6; the cantilever beam supporting a P-type gallium nitride layer 7 is arranged on the cantilever beam N-type gallium nitride layer 8, the cantilever beam supporting a P-type gallium nitride layer 7 is connected to the second pin supporting a P-type gallium nitride layer 4, the cantilever beam electrode 3 is arranged on the cantilever beam supporting a P-type gallium nitride layer 7, and the cantilever beam electrode 3 is connected to the second pin electrode 2.

[0033] In order to effectively isolate the electrical contact between gallium nitride and the silicon substrate, the present invention places an aluminum nitride material under the gallium nitride layer to enhance the later electrical control effect of the device, specifically an aluminum nitride layer 10, which is disposed at the bottom of the cantilever beam N-type gallium nitride layer 8.

[0034] like Figure 5 As shown, the present invention provides a method for preparing a Si-GaN suspended waveguide single-mode laser, comprising the following steps:

[0035] Step 1: Spin-coat photoresist on the upper surface of the GaN on the silicon-based GaN wafer, and use optical lithography technology to define the pattern of the hole structure on the spin-coated photoresist layer, and define the pattern corresponding to the first pin support, the second pin support, and the cantilever beam support;

[0036] Step 2: Use ICP etching technology to etch down the nitride layer until the upper surface of the silicon substrate layer, and then continue etching downwards to copy the pattern onto silicon, thereby transferring the pattern defined in the first step to the gallium nitride layer of the silicon-based nitride wafer, obtaining two disk structures connected by cantilever beams, and etching out the corresponding patterns of the first pin support, the second pin support, and the cantilever beam support.

[0037] Step 3: Spin-coat photoresist on the surface of the substrate prepared in the second step, and use optical lithography technology to define the pattern of the hole structure on the spin-coated photoresist layer, define the pattern corresponding to the second pin support and the cantilever beam support, and ensure that the pattern on the small part of the cantilever beam support close to the first pin support is not defined. Use ICP etching technology to etch down to the surface of the N-type gallium nitride layer on the first pin support and the small part of the cantilever beam support close to the first pin support. The pattern formed by the first pin support, the cantilever beam support, and the second pin support is in a stepped shape.

[0038] Step 4: Spin-coat photoresist on the surface of the substrate prepared in the third step, the first pin support, the stepped portion connecting the cantilever beam support and the first pin support, and the periphery of the overall pattern of the cantilever beam support and the second pin support. Then, use optical lithography technology to define the first pin electrode in the left electrode area, the cantilever beam electrode, and the second pin electrode in the right electrode area on the first pin support, the second pin support, and the upper surface of the cantilever beam support that has not been etched to the surface of the N-type gallium nitride layer.

[0039] Step 5: Electron beam evaporation technology is used to evaporate electrodes on the surface of the left electrode area, the cantilever beam and the right electrode area. Finally, the residual photoresist is removed to obtain the first pin electrode of the left electrode area, the cantilever beam electrode and the second pin electrode of the right electrode area.

[0040] Step 6: Use a mixture of hydrofluoric acid and dilute nitric acid to wet-etch silicon until the bottom of the silicon substrate layer, so that a silicon cone supporting the circular electrode pin is formed in the silicon substrate layer.

[0041] Step 7:

[0042] The present invention utilizes advanced micro-nano processing technology to design and prepare a silicon-based nitride cantilever beam and electrode pin structures on both sides.

[0043] The cone-shaped support structure formed by wet silicon etching technology using a mixture of hydrofluoric acid and dilute nitric acid is a single-mode laser structure with a well-structured silicon pyramid support. The wet etching process used is to suspend the electrode for a short time after plating it, thereby reducing the loss of the electrode.

[0044] like Figure 1 , 4 As shown, an electrical control system of a Si-GaN suspended waveguide single-mode laser includes a spectrometer 14, a processor 15, an optical pump 16 and a power supply 17, and also includes the above-mentioned Si-GaN suspended waveguide single-mode laser;

[0045] The electrical control method is as follows: a spectrometer 14 is used to perform spectral analysis on the emitted laser, and a power supply 17 is used to adjust the current to form an electrical control means of a negative feedback mechanism; under the light excitation of the optical pump 16, the cantilever beam electrode 3 emits stimulated laser, the spectrometer 14 performs spectral analysis on the emitted laser, and sends an instruction execution command to the power supply 17 through the processor 15, the power supply 17 is respectively connected to the first pin electrode 1 and the second pin electrode 2, after adjusting the current size, the power supply 17 sends an execution completion notification to the spectrometer 14 through the processor 15, and the spectrometer 14 performs spectral analysis on the emitted laser again, and the cycle continues until the spectrum of the emitted laser stabilizes within the specified range.

[0046] By placing the laser in a system that introduces a negative feedback mechanism, the laser mode is controlled by means of the coordinated work of the spectrometer 14 and the power supply 17.

[0047] Example 1

[0048] The silicon-based nitride PN crystal sheet is used as a carrier, and a silicon substrate layer, an aluminum nitride layer, an N-type gallium nitride layer, a quantum well layer, a P-type gallium nitride layer and an electrode arranged on the upper surface of the gallium nitride layer are arranged in sequence from bottom to top. The first and second sides are connected to the middle working area by a micro-disk electrode pin bracket. The silicon substrate layer of the micro-disk wafer is hollowed out by wet etching silicon technology, and only the side wall and the bottom conical column support part are retained, forming a suspended cavity located below the gallium nitride layer. The micro-disk is provided with two cantilever beams that at least carve through the gallium nitride layer and the aluminum nitride layer from the gallium nitride layer downward to the cavity. The two electrode pin disks are respectively connected to the N-type gallium nitride layer and the P-type gallium nitride layer, and are connected to the device through the cantilever beam. Among them, the N-type gallium nitride layer is 190-210 nanometers lower than the P-type gallium nitride layer. The middle cantilever beam is 60-80 microns in length and 8-10 microns in width, which is used to adjust the laser characteristics of the microcavity and ensure single-mode output. An aluminum nitride layer with a thickness of 100-110 nanometers is set between the silicon layer and the gallium nitride layer. The device is input with a signal through optical pumping to adjust the width of the cantilever beam to achieve a single-mode laser in the range of 370-390 nanometers. The cantilever beam structure is powered by a power supply and two-pin electrodes, and Joule heat is used to achieve optical pumping laser thermal regulation, and finally achieve laser mode regulation. Combining the spectral analysis results of the spectrometer and the preset output wavelength of the processor, the binary method is used to give the increase and decrease relationship of the thermal control power supply, which is fed back to the power supply to increase and decrease the current, repeatedly compare the analysis results of the spectrometer and the wavelength detected by the processor, and feed back to the power supply. Repeat this operation to stabilize the laser mode to the predetermined wavelength.

[0049] Example 2

[0050] The silicon-based nitride PN crystal sheet is used as a carrier, and a silicon substrate layer, an aluminum nitride layer, an N-type gallium nitride layer, a quantum well layer, a P-type gallium nitride layer and an electrode arranged on the upper surface of the gallium nitride layer are arranged in sequence from bottom to top. The first and second sides are connected to the middle working area by a micro-disk electrode pin bracket. The silicon substrate layer of the micro-disk wafer is hollowed out inside by wet etching silicon technology, and only the side wall and the bottom conical column support part are retained, forming a suspended cavity located below the gallium nitride layer. The micro-disk is provided with two cantilever beams that at least carve through the gallium nitride layer and the aluminum nitride layer from the gallium nitride layer downward to the cavity. The two electrode pin disks are respectively connected to the N-type gallium nitride layer and the P-type gallium nitride layer, and are connected to the device through the cantilever beam. Among them, the N-type gallium nitride layer is 170-190 nanometers lower than the P-type gallium nitride layer. The length of the middle cantilever beam is 80-100 microns and the width is 8-10 microns, which is used to adjust the laser characteristics of the microcavity and ensure single-mode output. An aluminum nitride layer with a thickness of 100-110 nanometers is set between the silicon layer and the gallium nitride layer. The device is input with a signal through optical pumping to adjust the width of the cantilever beam to achieve a single-mode laser in the range of 370-390 nanometers. The cantilever beam structure is powered by a power supply and two-pin electrodes, and Joule heat is used to achieve optical pumping laser thermal regulation, and finally achieve laser mode regulation. Combining the spectral analysis results of the spectrometer and the preset output wavelength of the processor, the binary method is used to give the increase and decrease relationship of the thermal control power supply, which is fed back to the power supply to increase and decrease the current, repeatedly compare the analysis results of the spectrometer and the wavelength detected by the processor, and feed back to the power supply. Repeat this operation to stabilize the laser mode to the predetermined wavelength.

[0051] Example 3

[0052] The silicon-based nitride PN crystal sheet is used as a carrier, and a silicon substrate layer, an aluminum nitride layer, an N-type gallium nitride layer, a quantum well layer, a P-type gallium nitride layer and an electrode arranged on the upper surface of the gallium nitride layer are arranged in sequence from bottom to top. The first and second sides are connected to the middle working area by a micro-disk electrode pin bracket. The silicon substrate layer of the micro-disk wafer is hollowed out by wet etching silicon technology, and only the side wall and the bottom conical column support part are retained, forming a suspended cavity located below the gallium nitride layer. The micro-disk is provided with two cantilever beams that at least carve through the gallium nitride layer and the aluminum nitride layer from the gallium nitride layer downward to the cavity. The two electrode pin disks are respectively connected to the N-type gallium nitride layer and the P-type gallium nitride layer, and are connected to the device through the cantilever beam. Among them, the N-type gallium nitride layer is 180-200 nanometers lower than the P-type gallium nitride layer. The middle cantilever beam is 60-80 microns long and 8-10 microns wide, which is used to adjust the laser characteristics of the microcavity and ensure single-mode output. An aluminum nitride layer with a thickness of 110-120 nanometers is set between the silicon layer and the gallium nitride layer. The device is input with a signal through optical pumping to adjust the width of the cantilever beam to achieve a single-mode laser in the range of 370-390 nanometers. The cantilever beam structure is powered by a power supply and two-pin electrodes, and Joule heat is used to achieve optical pumping laser thermal regulation, and finally achieve laser mode regulation. Combining the spectrum analysis results of the spectrometer and the preset output wavelength of the processor, the binary method is used to give the increase and decrease relationship of the thermal control power supply, which is fed back to the power supply to increase and decrease the current, repeatedly compare the analysis results of the spectrometer and the wavelength detected by the processor, and feed back to the power supply. Repeat this operation to stabilize the laser mode to the predetermined wavelength.

[0053] Example 4

[0054] The silicon-based nitride PN crystal sheet is used as a carrier, and a silicon substrate layer, an aluminum nitride layer, an N-type gallium nitride layer, a quantum well layer, a P-type gallium nitride layer and an electrode arranged on the upper surface of the gallium nitride layer are arranged in sequence from bottom to top. The first and second sides are connected to the middle working area by a micro-disk electrode pin bracket. The silicon substrate layer of the micro-disk wafer is hollowed out by wet etching silicon technology, and only the side wall and the bottom conical column support part are retained, forming a suspended cavity located below the gallium nitride layer. The micro-disk is provided with two cantilever beams that at least carve through the gallium nitride layer and the aluminum nitride layer from the gallium nitride layer downward to the cavity. The two electrode pin disks are respectively connected to the N-type gallium nitride layer and the P-type gallium nitride layer, and are connected to the device through the cantilever beam. Among them, the N-type gallium nitride layer is 140-160 nanometers lower than the P-type gallium nitride layer. The length of the middle cantilever beam is 60-80 microns and the width is 8-10 microns, which is used to adjust the laser characteristics of the microcavity and ensure single-mode output. An aluminum nitride layer with a thickness of 80-100 nanometers is set between the silicon layer and the gallium nitride layer. The device is input with a signal through optical pumping to adjust the width of the cantilever beam to achieve a single-mode laser in the range of 370-390 nanometers. The cantilever beam structure is powered by a power supply and two-pin electrodes, and Joule heat is used to achieve optical pumping laser thermal regulation, and finally achieve laser mode regulation. Combining the spectrum analysis results of the spectrometer and the preset output wavelength of the processor, the binary method is used to give the increase and decrease relationship of the thermal control power supply, which is fed back to the power supply to increase and decrease the current, repeatedly compare the analysis results of the spectrometer and the wavelength detected by the processor, and feed back to the power supply. Repeat this operation to stabilize the laser mode to the predetermined wavelength.

[0055] It should be noted that, in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. At the same time, in the description of the present invention, it should be understood that the orientation or position relationship indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like are based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the equipment or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention. And in the drawings of the present invention, the filling pattern is only to distinguish the layers, without any other limitation.

[0056] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A Si-GaN suspended waveguide single-mode laser, characterized in that: Comprising a first pin electrode (1), a second pin electrode (2), a cantilever beam electrode (3) and a silicon substrate (13), wherein the first pin electrode (1) is arranged on the silicon substrate (13) via a first supporting structure, the second pin electrode (2) is arranged on the silicon substrate (13) via a second supporting structure, a cantilever beam is arranged between the first supporting structure and the second supporting structure, the cantilever beam electrode (3) is arranged on the cantilever beam, and the cantilever beam electrode (3) is connected to the second pin electrode (2); The first supporting structure comprises: a first pin supporting an N-type gallium nitride layer (9) and a first silicon column (11); the first silicon column (11) is arranged on the silicon substrate (13), the first pin supporting the N-type gallium nitride layer (9) is arranged on the first silicon column (11), and the first pin electrode (1) is arranged on the first pin supporting the N-type gallium nitride layer (9); The second support structure comprises: a second pin supporting a P-type gallium nitride layer (4), a second pin supporting a quantum well layer (5), a second pin supporting an N-type gallium nitride layer (6) and a second silicon column (12); the second silicon column (12) is arranged on the silicon substrate (13), the second pin supporting the N-type gallium nitride layer (6) is arranged on the second silicon column (12), the second pin supporting the quantum well layer (5) is arranged on the second pin supporting the N-type gallium nitride layer (6), the second pin supporting the P-type gallium nitride layer (4) is arranged on the second pin supporting the quantum well layer (5), and the second pin electrode (2) is arranged on the second pin supporting the P-type gallium nitride layer (4); The cantilever beam comprises: a cantilever beam supporting a P-type gallium nitride layer (7) and a cantilever beam N-type gallium nitride layer (8); one end of the cantilever beam N-type gallium nitride layer (8) is connected to the first pin supporting an N-type gallium nitride layer (9), and the other end is connected to the second pin supporting an N-type gallium nitride layer (6); the cantilever beam supporting a P-type gallium nitride layer (7) is arranged on the cantilever beam N-type gallium nitride layer (8); the cantilever beam supporting a P-type gallium nitride layer (7) is connected to the second pin supporting a P-type gallium nitride layer (4); the cantilever beam electrode (3) is arranged on the cantilever beam supporting a P-type gallium nitride layer (7); and the cantilever beam electrode (3) is connected to the second pin electrode (2).

2. The Si-GaN suspended waveguide single-mode laser according to claim 1, characterized in that: It also comprises an aluminium nitride layer (10), wherein the aluminium nitride layer (10) is arranged at the bottom of the cantilever beam N-type gallium nitride layer (8).

3. A method for preparing a Si-GaN suspended waveguide single-mode laser, characterized in that: The method comprises the following steps: Step 1: Spin-coat photoresist on the GaN surface of the GaN-on-Si wafer and define the pattern of the hole structure on the spin-coated photoresist layer; Step 2: Etch the nitride layer downward until the upper surface of the silicon substrate layer, and then continue etching downward to copy the pattern onto silicon, thereby transferring the pattern defined in the first step to the gallium nitride layer of the silicon-based nitride wafer, obtaining two disk structures connected by cantilever beams, and etching out the patterns corresponding to the first pin support, the second pin support, and the cantilever beam support; Step 3: Spin-coat photoresist on the surface of the substrate prepared in the second step, define a pattern corresponding to the second pin support and the cantilever beam support on the spin-coated photoresist layer, and etch downward to the surface of the N-type gallium nitride layer on the first pin support and the cantilever beam support connected to the first pin support; obtain a stepped pattern consisting of the first pin support, the cantilever beam support, and the second pin support; Step 4: Spin-coat photoresist on the periphery of the overall pattern on the substrate surface prepared in the third step, and then define the first electrode and the second electrode on the first pin support, the second pin support, and the upper surface of the cantilever beam support that is not etched to the surface of the N-type gallium nitride layer respectively; Step 5: evaporating electrodes on the surface of the first electrode region, the cantilever beam and the surface of the second electrode region to obtain electrodes in the first electrode region, electrodes in the cantilever beam and electrodes in the second electrode region; Step 6: Silicon cones are formed in the silicon substrate layer to support the first electrode and the second electrode pins respectively.

4. The method for preparing a Si-GaN suspended waveguide single-mode laser according to claim 3, characterized in that: The silicon cone is wet-etched with a mixture of hydrofluoric acid and dilute nitric acid until the bottom of the silicon substrate layer.

5. An electrical control system for a Si-GaN suspended waveguide single-mode laser, characterized in that: The invention comprises a spectrometer (14), a processor (15), an optical pump (16) and a power supply (17), and also comprises a Si-GaN suspended waveguide single-mode laser as claimed in any one of claims 1 to 2.

6. An electrical control method for a Si-GaN suspended waveguide single-mode laser, characterized in that: A spectrometer (14) is used to perform spectral analysis on the emitted laser light, and a power supply (17) is used to adjust the current to form an electrical control means of a negative feedback mechanism; under the light excitation of the optical pump (16), the cantilever beam electrode (3) emits stimulated laser light, the spectrometer (14) performs spectral analysis on the emitted laser light, and sends an instruction execution command to the power supply (17) through the processor (15); the power supply (17) is respectively connected to the first pin electrode (1) and the second pin electrode (2); after adjusting the current size, the power supply (17) sends an execution completion notification to the spectrometer (14) through the processor (15); the spectrometer (14) performs spectral analysis on the emitted laser light again, and the cycle continues until the spectrum of the emitted laser light is stabilized within a specified range.

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