Method for reducing photoresist consumption and method for forming semiconductor structure

Abstract

The present disclosure relates to a method of reducing resist consumption (RRC) and a method of forming a semiconductor structure. The method of reducing RRC includes treating a surface of a substrate with an RRC composition; and forming a resist layer including a metal-containing material on the surface treated with the RRC composition. The RRC composition includes a solvent, and an acid or a base. The solvent has a dispersion parameter of 10 to 25. The acid has an acid dissociation constant of -20 to 6.8, and the base has an acid dissociation constant of 7.2 to 45.

Description

Technical Field

[0001] This disclosure relates to a method for reducing photoresist consumption and a method for forming a semiconductor structure, and more particularly to a method for reducing photoresist consumption using a photoresist-reducing composition, and a method for forming a semiconductor structure. Background Technology

[0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advancements in IC materials and design have spawned several generations of ICs, each featuring smaller and more complex circuits than the previous generation. Throughout IC development, as geometric dimensions (i.e., the smallest components (or wires) that can be produced using manufacturing processes) have shrunk, functional density (i.e., the number of interconnect devices per chip area) has generally increased. This size reduction process typically offers advantages through increased throughput and reduced associated costs. However, this size reduction also increases the complexity of handling and manufacturing ICs. Summary of the Invention

[0003] One embodiment of this disclosure discloses a method for reducing photoresist consumption (RRC). The method includes treating a substrate surface with an RRC composition and forming a photoresist layer comprising a metallic material on the RRC-treated surface. The RRC composition comprises a first solvent and an acid or base. The first solvent has a dispersion parameter of 10 to 25. The acid has an acid dissociation constant of -20 to 6.8. The base has an acid dissociation constant of 7.2 to 45.

[0004] Another embodiment of this disclosure discloses a method for forming a semiconductor structure. The method includes depositing a material layer on a substrate; forming a reduced photoresist loss (RRC) composition layer on the material layer; forming a photoresist layer including a metal material on the RRC composition layer; patterning the photoresist layer to form a patterned photoresist layer; and using the patterned photoresist layer as an etching mask to etch the material layer. The RRC composition includes a solvent and an acid or base. The solvent has several Hansen solubility parameters: a dispersion parameter of 10 to 25, a polarity parameter of 3 to 25, and a hydrogen bonding parameter of 4 to 30. The acid has an acid dissociation constant of -20 to 6.8. The base has an acid dissociation constant of 7.2 to 45.

[0005] Another embodiment of this disclosure discloses a method for forming a semiconductor structure. The method includes depositing a material layer on a substrate; forming a reduced photoresist consumption (RRC) composition layer on the material layer; forming a photoresist layer including a metallic material on the RRC composition layer; exposing the photoresist layer to extreme ultraviolet (EUV) radiation to form a patterned photoresist layer; and using the patterned photoresist layer as an etching mask to etch the material layer. The RRC composition includes a first solvent having a hydrogen bonding parameter of 4 to 30, an acid having an acid dissociation constant of -20 to 6.8 or a base having an acid dissociation constant of 7.2 to 45, a chelating agent, a surfactant, a second solvent having a boiling point greater than 150°C, and an aqueous solvent or water. Attached Figure Description

[0006] The best understanding of the features disclosed herein can be obtained by reading them in conjunction with the accompanying drawings and the following detailed description. It should be noted that, in accordance with industry standard practice, the features are not drawn to scale. In fact, the dimensions of the features may be arbitrarily enlarged or reduced for clarity of discussion.

[0007] Figure 1 This is a block diagram of a spin coating system for coating a substrate, according to some embodiments.

[0008] Figure 2 This is a flowchart of a method for manufacturing a semiconductor structure according to some embodiments;

[0009] Figures 3A to 3F Based on the use of some embodiments Figure 2 A cross-sectional view of a semiconductor structure produced by the manufacturing method described above.

[0010] [Symbol Explanation]

[0011] 100: System

[0012] 102, 302: Substrate

[0013] 104: Wafer Socket

[0014] 106: Bracket

[0015] 108, 110: Nozzle

[0016] 114,116: Source

[0017] 120: Controller

[0018] 200: Method

[0019] 202,204,206,208,210,212: Operations

[0020] 300: Structure

[0021] 304: Material layer

[0022] 304P: Patterned material layer

[0023] 306: Reduced photoresist consumption layer

[0024] 310: Photoresist layer

[0025] 310P: Patterned photoresist layer

[0026] 320: Patterned Radiation

[0027] 330: Photomask

[0028] 332,334: Areas Detailed Implementation

[0029] To implement the various features of the provided subject matter, the following disclosure provides numerous different embodiments or examples. Specific examples of components, values, operations, materials, configurations, or the like are described below to simplify this disclosure. Of course, these components, values, operations, materials, configurations, or the like are merely examples and not intended to be limiting. Other components, values, operations, materials, configurations, or the like are considered. For example, the subsequent description of forming a first feature above or on a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which an additional feature may be formed between the first and second features so that the first and second features are not in direct contact. Furthermore, element symbols and / or element names may be repeated in various instances in this disclosure. This repetition is for simplicity and clarity and does not in itself define the relationship between the various embodiments and / or configurations discussed.

[0030] Furthermore, for ease of description, spatial relative terms (such as "beneath," "below," "lower," "above," "upper," and similar terms) may be used in the text to describe the relationship between one element or feature as illustrated in the accompanying drawings and another element (or other elements or features). In addition to the orientations depicted in the accompanying drawings, the spatial relative terms are intended to cover different orientations of the device during use or operation. The system may be in other orientations (rotated 90 degrees or in other directions), and the spatial relative descriptive terms used in the text may be interpreted accordingly.

[0031] IC manufacturing utilizes one or more lithography processes to transfer geometric patterns onto thin films or substrates. Geometry and patterning on semiconductors modify complex structures, enabling dopants, electrical properties, and wiring to complete circuits and achieve technical objectives. In lithography, photoresist is applied to a substrate in the form of a thin film and subsequently exposed by a photomask. The photomask contains transparent and opaque features that define the pattern generated within the photoresist layer. Multiple areas of the photoresist exposed to light passing through the photomask become either soluble or insoluble in a specific type of solution of a known developer. In this example, when the exposed areas are soluble, a positive image of the photomask is generated in the photoresist, and this type of photoresist is called a positive photoresist. On the other hand, if the unexposed areas are soluble in the developer, a negative image is generated in the photoresist, and this type of photoresist is called a negative photoresist. After development, these areas no longer covered by the photoresist are removed by etching, thereby replicating the photomask pattern onto the substrate. To ensure that the projected image is correctly exposed on the substrate, it is important that the photoresist layer is smooth and completely and uniformly coated on the substrate. The cost of photoresist is a significant material cost in semiconductor manufacturing. Reducing the amount of photoresist used to lower manufacturing costs is also important.

[0032] Spin coating is the most commonly used method when coating substrates with photoresist. To improve the uniformity of the photoresist coating thickness and reduce the photoresist discharge volume, the substrate surface is treated with a solvent called a reduced photoresist consumption (RRC) solvent before applying the photoresist. The RRC solvent provides a clean and hydrophobic surface, which enhances the adhesion of the photoresist to the substrate surface. The RRC solvent is typically OK73, which contains approximately 70% propylene glycol methyl ether (PGME) and approximately 30% propylene glycol monomethyl ether acetate (PGMEA).

[0033] As semiconductor device sizes continue to shrink, for example below the 20-nanometer node, traditional lithography suffers from optical limitations, leading to resolution issues and potentially failing to achieve the desired lithography performance. In contrast, extreme ultraviolet (EUV) lithography, utilizing EUV radiation at approximately 13.5 nm, can achieve even smaller device sizes. However, traditional polymer photoresists suffer from low absorption efficiency with EUV light sources, requiring long exposure times and resulting in low production output. One solution to this problem is to use metal photoresists containing metals with high EUV absorption to improve EUV sensitivity. However, compared to organic photoresists, metal photoresists tend to be relatively hydrophilic. Due to the incompatibility of solubility between OK73 and metal photoresists, OK73 is no longer suitable as an RRC solvent. Therefore, photoresist coating encounters problems such as photoresist material deposition and / or poor photoresist thickness uniformity, causing various patterning issues, such as increased linewidth roughness (LWR) and critical dimension (CD) non-uniformity. These patterning defects cause multiple semiconductor manufacturing problems and / or reduce semiconductor device performance. Therefore, there is a need for RRC compositions to reduce photoresist dispensing and improve the uniformity of metal photoresist coating thickness, thereby increasing EUV lithography performance and reducing manufacturing costs.

[0034] In the embodiments disclosed herein, a composition (also referred to as an RRC composition) is provided for reducing photoresist loss (RRC) and improving the uniformity of coating thickness containing metallic photoresist. Therefore, the RRC composition contributes to improved EUV lithography performance, such as improved linewidth roughness (LWR) and reduced defect number. This results in improved product yield and reduced manufacturing costs.

[0035] In some embodiments, the RRC composition comprises an organic solvent, as well as an acid or base.

[0036] The choice of organic solvent is based on multiple Hansen solubility parameters and dispersion parameters (δ). d ), polarity parameter (δ) p ) and hydrogen bonding parameter (δ h Polarity parameter (δ) p The energy originates from the dipole intermolecular forces between several molecules. The hydrogen bonding parameter (δ) h The energy originates from the hydrogen bonds between several molecules. These three parameters (δ) d δ p and δ hThis can be viewed as the coordinates of a point in three dimensions, known as Hansen space. In Hansen space, the closer two molecules are, the more likely they are to be miscible. In some embodiments, the organic solvent has a molecular weight of 10 to 25 (10 ≤ δ). d The dispersion parameter (δ) of ≤25) d ), 3 to 25 (3≦δ p The polarity parameter of ≦25), and 4 to 30 (4≦δ) h The hydrogen bond junction parameters are ≤30).

[0037] Organic solvents having the desired Hansen dissolution parameters within the above range include, but are not limited to, propylene glycol methyl ether (PGME), propylene glycol ethyl ether (PGEE), γ-butyrolactone (GBL), cyclohexanone (CHN), ethyl lactate (EL), methyl isobutyl methanol (MIBC), propylene glycol monomethyl ether acetate (PGMEA), methanol, ethanol, propanol, n-butanol, acetone, dimethylformamide, acetonitrile, isopropanol (IPA), tetrahydrofuran (THF), acetic acid, diacetone alcohol (DAA), and combinations thereof.

[0038] In some embodiments, the acid has an acid dissociation constant (pKa) of -20 to 6.8 (-20 ≤ pKa ≤ 6.8). In some embodiments, the acid is an organic acid, which includes, but is not limited to, oxoic acid, formic acid, 2-hydroxypropionic acid, 2-hydroxysuccinic acid, citric acid, uric acid, trifluoromethanesulfonic acid, benzenesulfonic acid, ethylsulfonic acid, methanesulfonic acid, acetic acid, maleic acid, carbonic acid, oxoethanoic acid, 2-hydroxyacetic acid, malonic acid, succinic acid, 3-oxobutanoic acid, hydroxylamine-o-sulfonic acid, methanesulfinic acid, methanesulfonic acid, sulfoacetic acid, 1,1,2,2-tetrafluoroethanesulfonic acid, 1,3-propanedisulfonic acid, nonafluorobutane-1-sulfonicacid, 5-sulfosalicylic acid, trichloroacetic acid, and combinations thereof. In some embodiments, the acid is an inorganic acid, which includes, but is not limited to, nitric acid (HNO3), sulfuric acid (H2SO4), hydrochloric acid (HCl), hydrobromic acid (HBr), phosphoric acid (H3PO4), and combinations thereof.

[0039] In some embodiments, the base has a pKa of 7.2 to 45 (7.2 ≤ pKa ≤ 45). In some embodiments, the base is an organic base comprising, but not limited to, monoethanolamine, monoisopropanolamine, 2-amino-2-methyl-1-propanol, 1H-benzotriazole, 1,2,4-triazole, 1,8-diazabicycloundec-7-ene, 1,5-diazabicyclo[4.3.0]non-5-ene, tetra-n-butylammonium hydroxide, tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide, and combinations thereof. In some embodiments, the base is an inorganic base comprising, but not limited to, amines (NH3), ammonium hydroxide, sodium hydroxide (NaOH), potassium hydroxide (KOH), and combinations thereof.

[0040] In some embodiments, the concentration of the acid or base ranges from 0.001 wt.% to 30 wt.% based on the total weight of the RRC composition. In some embodiments, the concentration of the acid or base ranges from 0.1 wt.% to 20 wt.% based on the total weight of the RRC composition.

[0041] In some embodiments, the RRC composition further comprises a chelating agent. In some embodiments, the chelating agent comprises, but is not limited to, ethylenediaminetetraacetic acid (EDTA), ethylenediamine-N,N'-disuccinic acid (EDDS), diethylenetriaminepentaacetic acid (DTPA), polyaspartic acid, trans-1,2-cyclohexanediamine-N,N,N',N'-tetraacetic acid monohydrate, ethylenediamine, and combinations thereof. The RRC composition may contain 30 wt.% or less of the chelating agent. In some embodiments, the concentration of the chelating agent ranges from 0.001 wt.% to 30 wt.% based on the total weight of the RRC composition. In some embodiments, the concentration of the chelating agent ranges from 0.01 wt.% to 20 wt.% based on the total weight of the RRC composition.

[0042] In some embodiments, the RRC composition further comprises a surfactant to increase solubility and reduce the surface tension of the substrate. In some embodiments, the surfactant comprises, but is not limited to, alkylbenzene sulfonates, metal sulfonates, fatty alcohol ethoxylates, and alkylphenol ethoxylates. In some embodiments, the surfactant is selected from the group consisting of sodium stearate, 4-(5-dodecyl)benzenesulfonate, ammonium lauryl sulfate, sodium lauryl sulfate, sodium laureth sulfate, sodium myristyl ether sulfate, sodium dioctyl sodium sulfosuccinate, perfluorooctane sulfonate, perfluorobutane sulfonate, alkyl-aryl ether phosphate, alkyl ether phosphates, sodium lauroyl sarcosinate, perfluorononanoate, perfluorooctanoate, octinidin dihydrochloride, cetrimonium bromide, hexadecylpyridine chloride, benzalkonium chloride, benzyl chloride, methyldioctadecylammonium chloride, and dioctadecylammonium chloride. bromide, 3-[(3-cholamidopropyl)dimethylammonio]-1-propanesulfonate, cocamidopropyl hydroxysulfonate, cocamidopropyl betaine, phosphatidylserine, phosphatidylethanolamine, phosphatidylcholine, sphingomyelin, octaethylene glycol monodecyl ether, pentaethylene glycol monodecyl ether, polyethoxy tallow amine, cocamidopropylethanolamine, cocamidopropyldiethanolamine, glyceryl monostearate, glyceryl monolaurate, sorbitan monolaurate, sorbitan monostearate, sorbitan tristearate, and combinations thereof. In some embodiments, the surfactant is polyethylene oxide or polypropylene oxide.

[0043] The RRC composition may contain 5 wt.% or less of a surfactant. In some embodiments, the concentration of the surfactant ranges from 0.1 wt.% to 5 wt.% based on the total weight of the RRC composition.

[0044] In some embodiments, the RRC composition further comprises an aqueous solvent. As used herein, the term "aqueous solvent" means a liquid miscible with water (more than 50% miscible with water by weight at 25°C and atmospheric pressure). In some embodiments, the aqueous solvent includes lower monohydric alcohols containing 1 to 5 carbon atoms (such as ethanol and isopropanol), ethylene glycols containing 2 to 8 carbon atoms (such as ethylene glycol, propylene glycol, 1,3-butanediol, and dipropylene glycol), C3 to C4 ketones, and C2 to C4 aldehydes. The RRC composition may contain 20 wt.% or less of an aqueous solvent. In some embodiments, the concentration of the aqueous solvent ranges from 0.001 wt.% to 20 wt.% based on the total weight of the RRC composition. In some embodiments, the concentration of the aqueous solvent ranges from 0.1 wt.% to 10 wt.% based on the total weight of the RRC composition.

[0045] In some embodiments, the RRC composition further comprises water. The RRC composition may contain 20 wt.% or less water. In some embodiments, the water concentration ranges from 0.1 wt.% to 20 wt.% based on the total weight of the RRC composition. In some embodiments, the water concentration ranges from 10 wt.% to 20 wt.% based on the total weight of the RRC composition.

[0046] In some embodiments, the RRC composition further comprises a high-boiling-point solvent having a boiling point greater than 150°C. In some embodiments, the high-boiling-point solvents applicable to this disclosure include, but are not limited to, cyclohexyl acetate, dipropylene glycol dimethyl ether (DPDME), propylene glycol diacetate (PGDA), dipropylene glycol methyl n-propyl ether (DPMNP), dipropylene glycol methyl ether acetate (DPMA), 1,4-butanediol diacrylate (1,4-BDDA), 1,3-butanediol diacetate (1,3-BGDA), 1,6-hexanediol diacrylate (1,6-HDDA), tripropylene glycol monomethyl ether (TPM), 1,3-propanediol, propylene glycol, 1-methoxy-2-(2-propoxypropoxy)propane, hexane-1,6-diyl diacetate, and butane-1,4-diyl diacetate. The RRC composition may contain 35 wt.% or less of a high-boiling solvent. In some embodiments, the concentration of the high-boiling solvent ranges from 0.1 wt.% to 35 wt.% based on the total weight of the RRC composition.

[0047] Figure 1 This is a block diagram of a spin coating system 100 for coating a substrate 102 with a thin film according to some embodiments of this disclosure. It should be noted that system 100 is merely an example and is not intended to limit this disclosure. Therefore, it is understood that additional functional blocks may be provided or connected to... Figure 1 In System 100, and hereby only a brief description of some other functional blocks may be given.

[0048] In the illustrated embodiment, the spin coating system 100 uses centrifugal force to deposit a uniform thin film onto the surface of a substrate 102. In some embodiments, the thin film comprises an RRC composition or photoresist. In some embodiments, the system 100 includes a wafer mount 104 for securing the substrate 102 firmly without skewing during very high-speed operation. In some embodiments, the wafer mount 104 has weight that allows instantaneous orientation and speed to change precisely with controlled acceleration and deceleration. In some embodiments, the wafer mount 104 is a vacuum wafer mount. In some embodiments, the vacuum wafer mount 104 includes a low-profile O-ring gasket for high-efficiency vacuum sealing. In other embodiments, the wafer mount 104 includes an edge-holding wafer mount for vacuum-sensitive substrate contact. In some embodiments, the wafer mount 104 is attached to a motor (not shown) configured to provide precise speed control.

[0049] In some embodiments, system 100 includes a support 106 having at least one nozzle 108 / 110 for dispensing coating 112 onto substrate 102. In the illustrated embodiment, system 100 includes two nozzles 108 and 110, wherein a first nozzle 108 is used to dispense the disclosed RRC composition from RRC composition source 114, and a second nozzle 110 is used to dispense photoresist from photoresist source 116. In some embodiments, RRC composition source 114 and photoresist source 116 each include a corresponding pump (not shown) for injecting material into the corresponding nozzle 108 or 110. In some embodiments, both the RRC composition and photoresist are guided through a single nozzle and injected through a single pump.

[0050] In some embodiments, the pumps attached to the RRC composition source 114 and the photoresist source 116 are further connected to a controller 120 to control the timing and speed of dispensing the RRC composition and photoresist. In some embodiments, the controller 120 is further connected to a motor connected to the wafer mount 104 to control the speed, acceleration or deceleration, and the rotation time of the wafer mount 104. In some embodiments, the dispensing of the RRC composition and photoresist and the rotation of the wafer mount 104 are controlled synchronously and automatically by the controller 120.

[0051] In some embodiments, controller 120 is a representative device and may include a processor, memory, input / output interfaces (I / O interfaces), communication interfaces, and a system bus. The processor may include any processing circuitry operable to control the operation and performance of controller 120. In various forms, the processor may be implemented as a general-purpose processor, a chip multiprocessor (CMP), a special-purpose processor, an embedded processor, a digital signal processor (DSP), a network processor, an input / output (I / O) processor, a media access control (MAC) processor, a radio baseband processor, an auxiliary processor, such as a complex instruction set computer (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, and / or a very long instruction word (VLIW) microprocessor, or other processing devices. The processor may also be implemented as a controller, a microcontroller, an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a programmable logic device (PLD), etc.

[0052] In many forms, a processor can be configured to run an operating system (OS) and various applications. Examples of operating systems include those commonly known as Apple OS, Microsoft Windows OS, and Android OS, as well as any other proprietary or open-source operating systems.

[0053] In some embodiments, at least one non-transitory computer-readable storage medium having computer-executable instructions embodied thereon is provided, wherein when the aforementioned computer-readable storage medium is executed by at least one processor, the computer-executable instructions cause the at least one processor to implement embodiments of the methods described herein. This computer-readable storage medium may be implemented as memory.

[0054] In some embodiments, the memory may comprise any machine-readable or computer-readable medium capable of storing data, including volatile / non-volatile memory and removable / non-removable memory. The memory may include at least one non-volatile memory cell. The non-volatile memory cell is capable of storing one or more software programs. The software programs may contain, for example, application programs, user data, device data, and / or configuration data, or combinations thereof (to name only). The software programs may contain instructions executable by various components of the controller 120 of system 100.

[0055] For example, memory may include read-only memory (ROM), random access memory (RAM), dynamic RAM (DRAM), double data rate DRAM (DDR-RAM), synchronous DRAM (SDRAM), static RAM (SRAM), programmable ROM (PROM), erasable programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), flash memory (such as NOR or NAMD flash memory), content addressable memory (CAM), polymer memory (such as ferroelectric polymer memory), phase change memory (such as bidirectional memory), ferroelectric memory, silicon-oxide-nitride-oxide-silicon (SONOS) memory, disk memory (such as flexible magnetic disk, hard disk drive, optical disk, magnetic disk) or card (such as magnetic card, optical card), or any other type of medium suitable for storing information.

[0056] In one embodiment, the memory may contain a file-based instruction set for executing methods to produce one or more timing libraries described herein. The instruction set may be stored in any acceptable machine-readable instruction format, including source code or various suitable programming languages. Some examples of programming languages ​​that can be used to store the instruction set include, but are not limited to, Java, C, C++, C#, Python, Objective-C, Visual Basic, or .NET programming languages. In some embodiments, a compiler or interpreter is included to translate the instruction set into machine-executable code that is executed by a processor.

[0057] In some embodiments, the I / O interface may include any suitable mechanism or component to at least enable a user to provide input (such as configuration parameters) to the controller 102, and the controller 102 to provide output control to other components of the system 100 (such as pumps, motors, etc.).

[0058] Figure 2 This is a flowchart illustrating a method 200 for manufacturing a semiconductor structure according to some embodiments of the present disclosure. Figures 3A to 3F This is a cross-sectional view of a semiconductor structure 300 constructed at various manufacturing stages according to some embodiments. The following is in conjunction with... Figure 2 and Figures 3A to 3FManufacturing method 200 is described, wherein semiconductor structure 300 is manufactured using embodiments of manufacturing method 200. It is understood that additional steps may be provided before, during, and after manufacturing method 200, and for various additional embodiments of manufacturing method 200, some of the steps described below may be replaced or deleted. It is further understood that additional features may be added to semiconductor structure 300, and for various additional embodiments of semiconductor structure 300, some of the features described below may be replaced or deleted.

[0059] Semiconductor structure 300 may be an intermediate structure of an IC or a portion thereof during manufacturing. The IC may include logic circuits, memory structures, passive components (such as resistors, capacitors, and inductors), and active components such as diodes, field-effect transistors (FETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), complementary metal-oxide-semiconductor (CMOS) transistors, bipolar transistors, high-voltage transistors, high-frequency transistors, FinFETs, other three-dimensional (3D) FETs, and combinations thereof. Semiconductor structure 300 may include interconnected multiple semiconductor devices (such as transistors).

[0060] Reference Figure 2 and Figure 3A According to some embodiments, manufacturing method 200 includes operation 202, wherein substrate 302 is provided in a semiconductor machine. For example, the semiconductor machine is... Figure 1 100. Rotary coating system. Figure 3A This is a cross-sectional view of a semiconductor structure 300 including a substrate 302 according to some embodiments.

[0061] In some embodiments, the substrate 302 may be a bulk semiconductor substrate comprising one or more semiconductor materials. In some embodiments, the substrate 302 may comprise silicon, silicon-germanium, carbon-doped silicon (Si:C), silicon-germanium-carbon, or other suitable semiconductor materials. In some embodiments, the substrate 302 is composed entirely of silicon.

[0062] In some embodiments, the substrate 302 may include one or more epitaxial layers, which are formed on the top surface of the bulk semiconductor substrate. In some embodiments, to improve performance, the epitaxial layers introduce strain into the substrate 302. For example, the aforementioned epitaxial layers comprise a semiconductor material different from the material of the bulk semiconductor substrate, such as a layer of silicon-germanium covering bulk silicon or a layer of silicon covering bulk silicon-germanium. In some embodiments, the epitaxial layers incorporated into the substrate 302 are formed by selective epitaxial growth, for example, metal-organic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), liquid phase epitaxy (LPE), metal-organic molecular beam epitaxy (MOMBE), or combinations thereof.

[0063] In some embodiments, substrate 302 may be a semiconductor-on-insulator (SOI) substrate. In some embodiments, the SOI substrate includes a semiconductor layer, such as a silicon layer formed on an insulating layer. In some embodiments, the insulating layer is a buried oxide (BOX) comprising silicon oxide or silicon germanium oxide. The insulating layer is provided on a processing substrate, for example, a silicon substrate. In some embodiments, the SOI substrate is formed using separation by implanted oxygen (SIMOX) or other suitable techniques, such as wafer bonding and polishing.

[0064] In some embodiments, the substrate 302 may also include dielectric substrates such as silicon oxide, silicon nitride, silicon oxynitride, low-k dielectric, silicon carbide, and / or other suitable layers.

[0065] In some embodiments, the substrate 302 may also include various p-type doped regions and / or n-type doped regions, which are achieved through processes such as ion implantation and / or diffusion. These doped regions include n-type wells, p-type wells, lightly doped regions (LDDs), and various channel doped profiles, configured to form various IC devices, such as CMOS transistors, image sensors, and / or light-emitting diodes (LEDs). The substrate 302 may also include other functional features such as resistors and / or capacitors, which are formed within and / or on the substrate 302.

[0066] In some embodiments, the substrate 302 may also include various isolation features. These isolation features separate various device regions within the substrate 302. The isolation features include different structures formed using different processing techniques. For example, the isolation features may include shallow trench isolation (STI) features. Forming an STI may involve etching trenches within the substrate 302 and filling the trenches with an insulating material such as silicon oxide, silicon nitride, and / or silicon oxynitride. The filled trenches may have a multilayer structure, such as one with a thermally oxidized liner filled with silicon nitride. Chemical mechanical polishing (CMP) may be performed to back-and-forth polish away excess insulating material and planarize the top surface of the isolation features.

[0067] In some embodiments, the substrate 302 may also include a plurality of gate stacks formed by a plurality of dielectric layers and a plurality of electrode layers. These dielectric layers may include an inner interface layer and a high-k dielectric layer deposited using suitable techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), thermal oxidation, combinations thereof, and / or other suitable techniques. The inner interface layer may comprise silicon oxide, and the high-k dielectric layer may comprise LaO, AlO, ZrO, TiO, Ta2O5, Y2O3, SrTiO3, BaTiO3, BaZrO, HfZrO, HfLaO, HfSiO, LaSiO, AlSiO, HfTaO, HfTiO, (Ba,Sr)TiO3 (BST), Al2O3, Si3N4, SiON, and / or other suitable materials. The electrode layer may comprise a single layer or alternating multilayer structures, such as: a metal layer with a work function that enhances device efficiency (work function metal layer), a padding layer, a wetting layer, an adhesive layer, and various combinations of conductive layers of metal, alloy, or metal silicide. The electrode layer may comprise Ti, Ag, Al, TiAlN, TaC, TaCN, TaSiN, Mn, Zr, TiN, TaN, Ru, Mo, Al, WN, Cu, W, any suitable material, and / or combinations thereof.

[0068] In some embodiments, substrate 302 may also include multiple interlayer dielectric (ILD) layers and conductive features integrated to form an interconnect structure configured to couple various p-type and n-type doped regions, as well as other functional features (such as gate electrodes), resulting in a functional integrated circuit. In one example, substrate 302 may include a portion of an interconnect structure, and this interconnect structure may include a multilayer interconnect (MLI) structure and ILD layers integrated with the MLI structure, providing circuitry for coupling various devices in substrate 302 to input / output power and signals. This interconnect structure includes various metal lines, contacts, and via features (or via plugs). Metal lines provide horizontal circuitry. Contacts provide vertical connections between the silicon substrate and the metal lines, while via features provide vertical connections between multiple metal lines in different metal layers.

[0069] In some embodiments, the substrate 302 may include a material layer 304, which can be patterned by manufacturing method 200 and is therefore also referred to as a patternable layer. In some embodiments, the material layer 304 serves as a hard mask layer, comprising a material such as silicon oxide, silicon nitride, silicon oxynitride, or titanium nitride. In some embodiments, the material layer 304 serves as an antireflective coating, comprising a nitrogen-free material such as silicon oxide, silicon oxygen carbide, or plasma-assisted chemical vapor deposition of silicon oxide. In some embodiments, for example, the material layer 304 is formed by a deposition process such as chemical vapor deposition (CVD), physical vapor deposition (PVD), or plasma-assisted chemical vapor deposition (PECVD). In some embodiments, the material layer 304 is optional and may be omitted.

[0070] Reference Figure 2 and Figure 3B The manufacturing method 200 proceeds to operation 204, wherein, according to some embodiments, the RRC composition is applied to the surface of the substrate 302 (such as the surface of the material layer 304) to form an RRC layer (reduced photoresist consumption layer) 306. Figure 3B This is a cross-sectional view of structure 300 after an RRC layer 306 is formed on the surface of substrate 302 by applying an RRC composition according to some embodiments.

[0071] As previously discussed, the RRC composition contains an organic solvent with a specific range of Hansen solubility parameters, as well as an acid or base. To reduce the surface tension between the photoresist and the surface of the substrate 302, the RRC composition is configured to wet the surface of the substrate 302. Therefore, photoresist consumption is reduced, and the thickness uniformity of the photoresist coating is improved. As previously discussed, various additives such as chelating agents, surfactants, aqueous solvents, high-boiling-point solvents, and / or water are added to modify the effectiveness of the improved RRC composition in reducing photoresist consumption and improving the thickness uniformity of the photoresist coating.

[0072] In some embodiments, the flow rate is appropriate through the nozzle (e.g., Figure 1 A predetermined amount of RRC composition is dispensed from nozzle 108 onto the surface of substrate 302. In some embodiments, the RRC composition is dispensed at a flow rate of approximately 5 standard cubic centimeters (sccm) to approximately 30 sccm per minute. In some embodiments, the RRC composition is dispensed while substrate 302 is rotating. In some embodiments, the rotation speed is in the range of 1500 revolutions per minute (rpm) to 3500 rpm to ensure that the RRC layer 306 is uniformly distributed on the surface of substrate 302 to provide a uniform thickness of RRC layer 306. In some embodiments, the RRC composition is dispensed while substrate 302 is stationary (i.e., not rotating). After dispensing the RRC composition, substrate 302 is rotated to ensure that the RRC composition is uniformly distributed on the surface of substrate 302 to provide a uniform thickness of RRC layer 306. In some embodiments, substrate 302 may be rotated at a speed of 50 revolutions per minute (rpm) to 1500 rpm for a period of 1 to 20 seconds.

[0073] Reference Figure 2 and Figure 3C Manufacturing method 200 proceeds to operation 206, wherein, according to some embodiments, photoresist layer 310 is formed on RRC layer 306. Figure 3C This is a cross-sectional view of structure 300 after photoresist layer 310 is formed on RRC layer 306, according to some embodiments.

[0074] The photoresist layer 310 is sensitive to the radiation used in the lithography process and is resistant to etching (or implantation). In some embodiments, the photoresist layer 310 is sensitive to radiation, such as: I-line light, DUV light (e.g., 248 nm radiation emitted by a krypton fluoride (KrF) excimer laser or 193 nm radiation emitted by an argon fluoride (ArF) excimer laser), EUV light (e.g., 13.5 nm light), electron beams (e-beams), and ion beams. In this embodiment, the photoresist layer 310 is sensitive to EUV radiation.

[0075] As discussed earlier, photon absorption becomes a problem in EUV lithography when using conventional organic photoresists. Therefore, this disclosure uses a photoresist containing metal. In some embodiments, the photoresist layer 310 includes a metal-containing material, a polymer material as an etch-resistant (or implantable) matrix, a radiation-sensitive component reactive to the polymer material (such as a photoacid generator (PAG)), a quenching alkali agent, and a chromophore.

[0076] In some embodiments, the metal-containing material of the photoresist layer 310 comprises one or more metal elements, such as cesium (Cs), barium (Ba), lanthanum (La), indium (In), cerium (Ce), silver (Ag), tin (Sn), or combinations thereof.

[0077] In some embodiments, the metal-containing material comprises metal oxide nanoparticles. In some embodiments, the photoresist layer 310 comprises one or more metal oxide nanoparticles, which or these metal oxide nanoparticles are selected from the group consisting of titanium dioxide, zinc oxide, zirconium dioxide, nickel oxide, cobalt oxide, manganese oxide, copper oxide, iron oxide, strontium titanate, tungsten oxide, vanadium oxide, chromium oxide, tin oxide, hafnium oxide, indium oxide, cadmium oxide, molybdenum oxide, tantalum oxide, niobium oxide, aluminum oxide, and combinations thereof. As used herein, nanoparticles are particles having an average particle size of about 1 nm to about 20 nm. Metal oxide nanoparticles smaller than about 1 nm are difficult to obtain and use in photoresist compositions. Metal oxide nanoparticles larger than about 20 nm are too large to be used in the photoresist of the embodiments disclosed herein. In some embodiments, the metal oxide nanoparticles have an average particle size of about 2 nm to about 5 nm. In some embodiments, the amount of metal oxide nanoparticles in the photoresist composition ranges from about 1 wt.% to about 15 wt.% based on the weight of the solvent used in the photoresist composition. In some embodiments, the amount of nanoparticles in the photoresist composition ranges from about 2 wt.% to about 10 wt.%, based on the weight of the solvent used in the photoresist composition. A concentration of less than about 1 wt.% of metal oxide nanoparticles provides an excessively thin photoresist coating. A concentration of more than about 15 wt.% of metal oxide nanoparticles provides an excessively viscous photoresist composition, which will be difficult to provide a photoresist coating of uniform thickness on the substrate 302.

[0078] In some embodiments, the metal oxide nanoparticles are liganded with a ligand. In some embodiments, this ligand is a ligand of a carboxylic acid or sulfonic acid. For example, in some embodiments, zirconium oxide or hafnium oxide nanoparticles are liganded with methacrylic acid to form zirconium methacrylate (ZrMAA) or hafnium methacrylate (HfMAA). In some embodiments, these metal oxide nanoparticles are liganded with a ligand comprising an aliphatic or aromatic group. The aforementioned aliphatic or aromatic group may be a straight-chain or branched group having cyclic or acyclic saturated side groups comprising 1 to 9 carbons, such groups comprising alkyl, alkenyl, and phenyl groups. The branched group may be further substituted with oxygen or halogen. In some embodiments, the ligand concentration is from about 10 wt.% to about 40 wt.% based on the weight of these metal oxide nanoparticles. At a ligand concentration below about 10 wt.%, the concentration of the ligand is insufficient to ligand with the metal oxide nanoparticles. Coordination concentrations above approximately 40 wt.% did not provide a significant improvement in the intercalation of ligands with metal oxide nanoparticles.

[0079] In some embodiments, the metal oxide / coordination complex is formed by clusters comprising a metal core with high EUV absorption, such as Cs, Ba, La, Ce, In, Sn, Ag, or Sb bonded to oxygen and / or nitrogen, to form 1 to 12 metal core-clusters. The metal core-clusters are fused with coordination groups comprising aliphatic or aromatic groups. The aliphatic or aromatic groups may be straight-chain or branched groups having cyclic or acyclic saturated side groups containing 1 to 9 carbons, including alkyl, alkenyl, and phenyl groups. In some embodiments, the branched groups may be further substituted with oxygen or halogen.

[0080] According to the embodiments disclosed herein, suitable examples of metal oxide / coordination group complexes are:

[0081] ,

[0082] ,

[0083] or

[0084] .

[0085] In some embodiments, the photoresist layer 310 is formed by a spin coating process. In some embodiments, the photoresist layer 310 is further treated with a soft bake process to remove solvent. In some embodiments, although the exact temperature is determined by the material selected for the photoresist layer 310, the soft bake process is performed at a temperature suitable for evaporating the solvent within the photoresist layer 310, for example, in the range of about 100°C to 200°C. For example, in some embodiments, the photoresist layer 310 is heated to about 150°C. The soft bake process is performed for a period of time sufficient to harden and dry the photoresist layer 310. In some embodiments, the soft bake process is performed for a period of about 10 seconds to about 10 minutes. For example, in some embodiments, the hardening of the photoresist layer 310 lasts for about 300 seconds.

[0086] Reference Figure 2 and Figure 3D Manufacturing method 200 proceeds to operation 208, wherein, according to some embodiments, photoresist layer 310 is exposed to patterned radiation 320. Figure 3D This is a cross-sectional view of structure 300 after photoresist layer 310 is exposed to patterned radiation 320, according to some embodiments.

[0087] In some embodiments, the photoresist layer 310 is exposed to patterned radiation 320 from a light source passing through the photomask 330. Based on the specifications of the manufactured IC, the photomask 330 has a predetermined pattern designed for the IC. The pattern of the photomask 330 corresponds to the pattern of the material used to modify various components of the manufactured IC device. For example, portions of the IC design layout include various IC features such as active regions, gate electrodes, source and drain electrodes, metal lines or vias for interlayer interconnects, and openings for solder pads, to be formed within the substrate 302 and / or within a material layer 304 disposed on the substrate 302.

[0088] The photomask 330 includes a first region 332 and a second region 334. In the first region 332, patterned radiation 320 is blocked by the photomask 330 and does not reach the photoresist layer 310. However, in the second region 334, the patterned radiation 320 is not blocked by the photomask 330 and can pass through the photomask 330 to reach the photoresist layer 310. Therefore, multiple portions of the photoresist layer 310 below the second region 334 receive the patterned radiation 320 and are referred to as the post-exposure portions. However, multiple portions of the photoresist layer 310 below the first region 332 do not receive the patterned radiation 320 and are referred to as the unexposed portions.

[0089] In some embodiments, the patterned radiation 320 is EUV radiation (e.g., 13.5 nm). Alternatively, in some embodiments, the patterned radiation 320 is DUV radiation (e.g., 248 nm radiation from a KrF excimer laser or 193 nm radiation from an ArF excimer laser), X-ray radiation, electron beam radiation, ion beam radiation, or other suitable radiation. In some embodiments, for EUV lithography and electron beam lithography, operation 208 is performed in a liquid (immersion lithography) or under vacuum.

[0090] Subsequently, a post-exposure baking process can be performed on the photoresist layer 310. The post-exposure baking process can be performed at a temperature of about 50°C to about 150°C for a period of about 60 seconds to about 360 seconds.

[0091] Reference Figure 2 and Figure 3E The manufacturing method 200 proceeds to operation 210, wherein, according to some embodiments, the photoresist layer 310 is developed using a developer to form a patterned photoresist layer 310P. Figure 3E This is a cross-sectional view of structure 300 after the patterned photoresist layer 310P is formed, according to some embodiments.

[0092] Reference Figure 3E During the development process, a developer is applied to the photoresist layer 310. Depending on the type of photoresist, the developer can remove exposed or unexposed portions of the photoresist layer 310. For example, and as... Figure 3E As shown, the photoresist layer 310 contains negative photoresist so that a portion of the photoresist layer 310 exposed to the patterning radiation 320 is not dissolved by the developer and remains in the structure 300. On the other hand, if the photoresist layer 310 contains positive photoresist, a portion of the photoresist layer 310 exposed to the patterning radiation 320 can be dissolved by the developer, leaving the unexposed portion in the structure 300.

[0093] The developer may comprise alcohols, aromatic hydrocarbons, and the like. Examples of alcohols include, but are not limited to, methanol, ethanol, 1-butanol, and 4-methyl-2-pentanol. Examples of aromatic hydrocarbons include, but are not limited to, xylene, toluene, and benzene. In some embodiments, the developer is selected from at least one of methanol, 4-methyl-2-pentanol, and xylene.

[0094] The developer can be applied using any suitable method. In some embodiments, the developer is applied in a developer bath by immersion. In some embodiments, the developer solution is sprayed onto the photoresist layer 310.

[0095] In this disclosure, by treating the surface of the substrate 302 with an RRC composition, the thickness uniformity of the photoresist layer 310 is improved, resulting in a significantly enhanced performance of the metal-containing photoresist with an improved LWR of more than 3%, a reduction in exposure energy of more than 3%, and a reduction in the number of defects of more than 5%. Therefore, the photoresist pattern can be transferred to the underlying layer with high precision.

[0096] Reference Figure 2 and Figure 3F The manufacturing method 200 proceeds to operation 212, wherein, according to some embodiments, a patterned photoresist layer 310P is used as an etching mask to etch the material layer 304. Figure 3F This is a cross-sectional view of structure 300 after etching material layer 304 using patterned photoresist layer 310P as an etching mask, according to some embodiments.

[0097] Reference Figure 3F The patterned photoresist layer 310P is used as an etching mask to pattern the material layer 304, thereby forming the patterned material layer 304P.

[0098] An etching process can be performed to transfer the pattern in the patterned photoresist layer 310P to the material layer 304. In some embodiments, while any suitable etching process may be used, the etching process employed is anisotropic etching, such as dry etching. In some embodiments, the dry etching is reactive ion etching (RIE) or plasma etching. In some embodiments, the dry etching is achieved by a fluorine-containing gas (such as CF4, SF6, CH2F2, CHF3 and / or C2F6), a chlorine-containing gas (such as Cl2, CHCl3, CCl4 and / or BCl3), a bromine-containing gas (such as HBr and / or CHBr3), an oxygen-containing gas, an iodine-containing gas, other suitable gases and / or plasma, or a combination thereof. In some embodiments, an oxygen plasma is used to etch the material layer 304. In some embodiments, the anisotropic etching is performed at a temperature of about 250°C to about 450°C for about 20 seconds to about 300 seconds.

[0099] If the patterned photoresist layer 310P is not completely consumed during the etching process, the patterned photoresist layer 310P can be removed by means of plasma ashing or wet stripping after the patterned material layer 304P is formed.

[0100] This disclosure relates to a method for reducing photoresist consumption (RRC). The method includes treating a substrate surface with an RRC composition and forming a photoresist layer comprising a metallic material on the RRC-treated surface. The RRC composition comprises a first solvent and an acid or base. The first solvent has a dispersion parameter of 10 to 25. The acid has an acid dissociation constant of -20 to 6.8. The base has an acid dissociation constant of 7.2 to 45.

[0101] Another aspect disclosed relates to a method for forming a semiconductor structure. The method includes depositing a material layer on a substrate; forming a reduced photoresist loss (RRC) composition layer on the material layer; forming a photoresist layer including a metal-containing material on the RRC composition layer; patterning the photoresist layer to form a patterned photoresist layer; and using the patterned photoresist layer as an etching mask to etch the material layer. The RRC composition includes a solvent and an acid or base. The solvent has several Hansen solubility parameters: a dispersion parameter of 10 to 25, a polarity parameter of 3 to 25, and a hydrogen bonding parameter of 4 to 30. The acid has an acid dissociation constant of -20 to 6.8. The base has an acid dissociation constant of 7.2 to 45.

[0102] This disclosure relates to another method for forming a semiconductor structure. The method includes depositing a material layer on a substrate; forming a reduced photoresist loss (RRC) composition layer on the material layer; forming a photoresist layer including a metal material on the RRC composition layer; exposing the photoresist layer to extreme ultraviolet (EUV) radiation to form a patterned photoresist layer; and using the patterned photoresist layer as an etching mask to etch the material layer. The RRC composition includes a first solvent having a hydrogen bonding parameter of 4 to 30, an acid having an acid dissociation constant of -20 to 6.8 or a base having an acid dissociation constant of 7.2 to 45, a chelating agent, a surfactant, a second solvent having a boiling point greater than 150°C, and an aqueous solvent or water.

[0103] This disclosure provides a method for reducing photoresist consumption (RRC). This method includes treating a substrate surface with an RRC composition; and forming a photoresist layer comprising a metallic material on the RRC-treated surface. The RRC composition comprises a first solvent and an acid or base. The first solvent has a dispersion parameter of 10 to 25, the acid has an acid dissociation constant of -20 to 6.8, and the base has an acid dissociation constant of 7.2 to 45.

[0104] In one embodiment, the first solvent comprises propylene glycol methyl ether (PGME), propylene glycol ethyl ether (PGEE), γ-butyrolactone, cyclohexanone, ethyl lactate, methyl isobutyl methanol, propylene glycol monomethyl ether acetate, methanol, ethanol, propanol, n-butanol, acetone, dimethylformamide, acetonitrile, isopropanol, tetrahydrofuran, acetic acid, diacetone alcohol, or combinations thereof.

[0105] In one embodiment, the first solvent has a polarity parameter of 3 to 25 and a hydrogen bonding parameter of 4 to 30.

[0106] In one embodiment, the concentration of acid or base ranges from 0.1 wt.% to 20 wt.% based on the total weight of the RRC composition.

[0107] In one embodiment, the acid is an organic acid or an inorganic acid. The organic acid includes oxalic acid, formic acid, 2-hydroxypropionic acid, 2-hydroxysuccinic acid, citric acid, uric acid, trifluoromethanesulfonic acid, benzenesulfonic acid, ethylsulfonic acid, methanesulfonic acid, acetic acid, maleic acid, or combinations thereof, and the inorganic acid includes nitric acid (HNO3), sulfuric acid (H2SO4), hydrochloric acid (HCl), hydrobromic acid (HBr), phosphoric acid (H3PO4), or combinations thereof.

[0108] In one embodiment, the base is an organic base or an inorganic base. The organic base includes monoethanolamine, monoisopropanolamine, 2-amino-2-methyl-1-propanol, 1H-benzotriazole, 1,2,4-triazole, 1,8-diazabicycloundec-7-ene, 1,5-diazabicyclo[4.3.0]nonadec-5-ene, or combinations thereof, and the inorganic base includes amine (NH3), ammonium hydroxide, sodium hydroxide (NaOH), potassium hydroxide (KOH), or combinations thereof.

[0109] In one embodiment, the RRC composition further comprises a chelating agent.

[0110] In one embodiment, the chelating agent comprises ethylenediaminetetraacetic acid (EDTA), ethylenediamine-N,N'-disuccinic acid (EDDS), diethylenetriaminepentaacetic acid (DTPA), polyaspartic acid, trans-1,2-cyclohexanediamine-N,N,N',N'-tetraacetic acid monohydrate, ethylenediamine, or combinations thereof.

[0111] In one embodiment, the RRC composition further comprises a surfactant.

[0112] In one embodiment, the RRC composition further comprises a second solvent having a boiling point greater than 150°C.

[0113] In one embodiment, the RRC composition further comprises an aqueous solvent.

[0114] In one embodiment, the RRC composition further comprises water.

[0115] This disclosure provides a method for forming a semiconductor structure. The method includes depositing a material layer on a substrate; forming a reduced photoresist loss (RRC) composition layer on the material layer; forming a photoresist layer including a metal-containing material on the RRC composition layer; patterning the photoresist layer to form a patterned photoresist layer; and using the patterned photoresist layer as an etching mask to etch the material layer. The RRC composition includes a solvent having a plurality of Hansen solubility parameters, and an acid or base. These Hansen solubility parameters include a dispersion parameter of 10 to 25, a polarity parameter of 3 to 25, and a hydrogen bonding parameter of 4 to 30. The aforementioned acid has an acid dissociation constant of -20 to 6.8, and the aforementioned base has an acid dissociation constant of 7.2 to 45.

[0116] In one embodiment, the solvent comprises propylene glycol methyl ether (PGME), propylene glycol ethyl ether (PGEE), γ-butyrolactone, cyclohexanone, ethyl lactate, methyl isobutyl methanol, propylene glycol monomethyl ether acetate, methanol, ethanol, propanol, n-butanol, acetone, dimethylformamide, acetonitrile, isopropanol, tetrahydrofuran, acetic acid, diacetone alcohol, or combinations thereof.

[0117] In one embodiment, the acid is an organic acid or an inorganic acid. The organic acid includes oxalic acid, formic acid, 2-hydroxypropionic acid, 2-hydroxysuccinic acid, citric acid, uric acid, trifluoromethanesulfonic acid, benzenesulfonic acid, ethylsulfonic acid, methanesulfonic acid, acetic acid, maleic acid, or combinations thereof, and the inorganic acid includes H2SO4, HNO3, HCl, H3PO4, HBr, or combinations thereof.

[0118] In one embodiment, the base is an organic base or an inorganic base. The organic base includes monoethanolamine, monoisopropanolamine, 2-amino-2-methyl-1-propanol, 1H-benzotriazole, 1,2,4-triazole, 1,8-diazabicycloundec-7-ene, 1,5-diazabicyclo[4.3.0]nonadecan-5-ene, or combinations thereof, and the inorganic base includes NaOH, NH3, KOH, or combinations thereof.

[0119] In one embodiment, the operation of patterning the photoresist layer includes exposing the photoresist layer to extreme ultraviolet (EUV) radiation; and developing the exposed photoresist layer.

[0120] This disclosure provides a method for forming a semiconductor structure. The method includes depositing a material layer on a substrate; forming a reduced photoresist loss (RRC) composition layer on the material layer; forming a photoresist layer including a metal-containing material on the RRC composition layer; exposing the photoresist layer to extreme ultraviolet (EUV) radiation to form a patterned photoresist layer; and using the patterned photoresist layer as an etching mask to etch the material layer. The RRC composition includes a first solvent, an acid or base, a chelating agent, a surfactant, a second solvent, and an aqueous solvent or water. The first solvent has a hydrogen bonding parameter of 4 to 30. The acid has an acid dissociation constant of -20 to 6.8, the base has an acid dissociation constant of 7.2 to 45, and the second solvent has a boiling point greater than 150°C.

[0121] In one embodiment, the first solvent comprises propylene glycol methyl ether (PGME), propylene glycol ethyl ether (PGEE), γ-butyrolactone, cyclohexanone, ethyl lactate, methyl isobutyl methanol, propylene glycol monomethyl ether acetate, methanol, ethanol, propanol, n-butanol, acetone, dimethylformamide, acetonitrile, isopropanol, tetrahydrofuran, acetic acid, diacetone alcohol, or combinations thereof.

[0122] In one embodiment, the second solvent comprises cyclohexyl acetate (CHAX), dipropylene glycol dimethyl ether (DPDME), propylene glycol diacetate (PGDA), dipropylene glycol methyl n-propyl ether (DPMNP), dipropylene glycol methyl ether acetate (DPMA), 1,4-butanediol diacrylate (1,4-BDDA), 1,3-butanediol diacetate (1,3-BGDA), 1,6-hexanediol diacrylate (1,6-HDDA), tripropylene glycol monomethyl ether (TPM), 1,3 1,2-Propane glycol, 1-methoxy-2-(2-propoxypropoxy)propane, hexane-1,6-dimethyldiacetate, butane-1,4-dimethyldiacetate, propane-1,2-dimethyldiacetate, 2-methoxy-1-((1-methoxyprop-2-yl)oxy)propane, 1-((1-methoxyprop-2-yl)oxy)prop-2-yl-acetate, butane-1,2,4-triol, 2-(2-(2-methoxypropoxy))propoxy)prop-1-ol and combinations thereof.

[0123] The foregoing outlines the features of several embodiments to enable those skilled in the art to better understand the nature of this disclosure. Those skilled in the art should understand that this disclosure can readily serve as the basis for other processes and structures designed or modified to implement the embodiments described herein and / or achieve the same objectives and / or advantages. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and modifications can be made to the text without departing from its spirit and scope.

Claims

1. A method for reducing photoresist consumption, characterized in that, Include: A surface of a substrate is treated with a photoresist-consuming composition; and A photoresist layer comprising a metallic material is formed on the surface after treatment with the photoresist-consuming composition. The photoresist-consuming composition comprises: A first solvent having a dispersion parameter of 10 to 25, a polarity parameter of 3 to 25, and a hydrogen bonding parameter of 4 to 30; and An acid or base, wherein the acid has a temperature of -20 to 100°C. The acid dissociation constant is 6.8, and the base has an acid dissociation constant ranging from 7.2 to 45.

2. The method for reducing photoresist consumption as described in claim 1, characterized in that, The first solvent comprises propylene glycol methyl ether (PGME), propylene glycol ethyl ether (PGEE), γ-butyrolactone, cyclohexanone, ethyl lactate, methyl isobutyl methanol, propylene glycol monomethyl ether acetate, methanol, ethanol, propanol, n-butanol, acetone, dimethylformamide, acetonitrile, isopropanol, tetrahydrofuran, acetic acid, diacetone alcohol, or combinations thereof.

3. The method for reducing photoresist consumption as described in claim 1, characterized in that, Based on the total weight of the photoresist-consuming composition, the concentration of the acid or base ranges from 0.001 wt.% to 30 wt.%.

4. The method for reducing photoresist consumption as described in claim 1, characterized in that, Based on the total weight of the photoresist-consuming composition, the concentration of the acid or base ranges from 0.1 wt.% to 20 wt.%.

5. The method for reducing photoresist consumption as described in claim 1, characterized in that, The acid is an organic acid or an inorganic acid, wherein the organic acid includes oxalic acid, formic acid, 2-hydroxypropionic acid, 2-hydroxysuccinic acid, citric acid, uric acid, trifluoromethanesulfonic acid, benzenesulfonic acid, ethylsulfonic acid, methanesulfonic acid, acetic acid, maleic acid or combinations thereof, and the inorganic acid includes nitric acid, sulfuric acid, hydrochloric acid, hydrobromic acid, phosphoric acid or combinations thereof.

6. The method for reducing photoresist consumption as described in claim 1, characterized in that, The base is an organic base or an inorganic base, wherein the organic base comprises monoethanolamine, monoisopropanolamine, 2-amino-2-methyl-1-propanol, 1H-benzotriazole, 1,2,4-triazole, 1,8-diazabicycloundec-7-ene, 1,5-diazabicyclo[4.3.0]nonadecan-5-ene or a combination thereof, and the inorganic base comprises an amine, ammonium hydroxide, sodium hydroxide, potassium hydroxide or a combination thereof.

7. The method for reducing photoresist consumption as described in claim 1, characterized in that, The photoresist-consuming composition also contains a chelating agent.

8. The method for reducing photoresist consumption as described in claim 7, characterized in that, The chelating agent comprises ethylenediaminetetraacetic acid, ethylenediamine-N,N'-disuccinic acid, diethylenetriaminepentaacetic acid, polyaspartic acid, trans-1,2-cyclohexanediamine-N,N,N',N'-tetraacetic acid monohydrate, ethylenediamine, or a combination thereof.

9. The method for reducing photoresist consumption as described in claim 1, characterized in that, The photoresist-consuming composition also contains a surfactant.

10. The method for reducing photoresist consumption as described in claim 9, characterized in that, The surfactant contains alkylbenzene sulfonate, metal sulfonate, fatty alcohol ethoxide and alkylphenol ethoxide.

11. The method for reducing photoresist consumption as described in claim 9, characterized in that, Based on the total weight of the photoresist-consuming composition, the concentration of the surfactant ranges from 0.1 wt.% to 5 wt.%.

12. The method for reducing photoresist consumption as described in claim 1, characterized in that, The photoresist-consuming composition also contains water.

13. A method for forming a semiconductor structure, characterized in that, Include: Deposit a material layer onto a substrate; A composition layer for reducing light resistance consumption is formed on the material layer; A photoresist layer containing a metallic material is formed on the photoresist consumption composition layer; Pattern the photoresist layer to form a patterned photoresist layer; and The patterned photoresist layer is used as an etching mask to etch the material layer. The photoresist-consuming composition comprises: One solvent has the following Hansen solubility parameters: A dispersion parameter of 10 to 25; A polarity parameter ranging from 3 to 25; and Hydrogen bond parameters from 4 to 30; and An acid or base, wherein the acid has a temperature of -20 to 100°C. The acid dissociation constant is 6.8, and the base has an acid dissociation constant ranging from 7.2 to 45.

14. The forming method as described in claim 13, characterized in that, The solvent contains propylene glycol methyl ether, propylene glycol ethyl ether, γ-butyrolactone, cyclohexanone, ethyl lactate, methyl isobutyl methanol, propylene glycol monomethyl ether acetate, methanol, ethanol, propanol, n-butanol, acetone, dimethylformamide, acetonitrile, isopropanol, tetrahydrofuran, acetic acid, diacetone alcohol, or combinations thereof.

15. The forming method as described in claim 13, characterized in that, The acid is an organic acid or an inorganic acid, wherein the organic acid includes oxalic acid, formic acid, 2-hydroxypropionic acid, 2-hydroxysuccinic acid, citric acid, uric acid, trifluoromethanesulfonic acid, benzenesulfonic acid, ethylsulfonic acid, methanesulfonic acid, acetic acid, maleic acid or combinations thereof, and the inorganic acid includes H2SO4, HNO3, HCl, H3PO4, HBr or combinations thereof.

16. The forming method as described in claim 13, characterized in that, The base is an organic base or an inorganic base, wherein the organic base comprises monoethanolamine, monoisopropanolamine, 2-amino-2-methyl-1-propanol, 1H-benzotriazole, 1,2,4-triazole, 1,8-diazabicycloundec-7-ene, 1,5-diazabicyclo[4.3.0]nonadecan-5-ene or a combination thereof, and the inorganic base comprises NaOH, NH3, KOH or a combination thereof.

17. The forming method as described in claim 13, characterized in that, The process of patterning the photoresist layer includes exposing the photoresist layer to extreme ultraviolet radiation and developing the exposed photoresist layer.

18. A method for forming a semiconductor structure, characterized in that, Include: Deposit a material layer onto a substrate; A composition layer for reducing light resistance consumption is formed on the material layer; A photoresist layer containing a metallic material is formed on the photoresist consumption composition layer; The photoresist layer is exposed to extreme ultraviolet radiation to form a patterned photoresist layer; and The patterned photoresist layer is used as an etching mask to etch the material layer; The photoresist-consuming composition comprises: A first solvent comprising propylene glycol methyl ether, propylene glycol ethyl ether, γ-butyrolactone, cyclohexanone, ethyl lactate, methyl isobutyl methanol, propylene glycol monomethyl ether acetate, methanol, ethanol, propanol, n-butanol, acetone, dimethylformamide, acetonitrile, isopropanol, tetrahydrofuran, acetic acid, diacetone alcohol, or combinations thereof. An acid or base, wherein the acid has a temperature of -20 to 100°C. The base has an acid dissociation constant of 6.8, and the base has an acid dissociation constant of 7.2 to 45. One chelating agent; One surfactant; A second solvent comprising cyclohexyl acetate, dipropylene glycol dimethyl ether, propylene glycol diacetate, dipropylene glycol methyl n-propyl ether, dipropylene glycol methyl ether acetate, 1,4-butanediol diacrylate, 1,3-butanediol diacetate, 1,6-hexanediol diacrylate, tripropylene glycol monomethyl ether, 1,3-propanediol, 1,2-propanediol, 1-methoxy-2-(2-propoxypropoxy)propane, and hexanediol diacrylate. Alkyl-1,6-dimethyldiacetate, butane-1,4-dimethyldiacetate, propane-1,2-dimethyldiacetate, 2-methoxy-1-((1-methoxyprop-2-yl)oxy)propane, 1-((1-methoxyprop-2-yl)oxy)prop-2-yl-acetate, butane-1,2,4-triol, 2-(2-(2-methoxypropoxy))propoxy)prop-1-ol and combinations thereof; and An aqueous solvent or water, including ethylene glycol, propylene glycol, 1,3-butanediol, dipropylene glycol, C4 ketones, and C2 to C4 aldehydes.

19. The forming method as described in claim 18, characterized in that, The chelating agent comprises ethylenediaminetetraacetic acid, ethylenediamine-N,N'-disuccinic acid, diethylenetriaminepentaacetic acid, polyaspartic acid, trans-1,2-cyclohexanediamine-N,N,N',N'-tetraacetic acid monohydrate, ethylenediamine, or a combination thereof.

20. The forming method as described in claim 18, characterized in that, The surfactant contains alkylbenzene sulfonate, metal sulfonate, fatty alcohol ethoxide and alkylphenol ethoxide.

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