Devices for reducing hydrogen permeation and methods for manufacturing semiconductor components

Abstract

A device for reducing hydrogen permeation and a method for manufacturing a semiconductor device are provided. This device reduces hydrogen permeation through a mask during extreme ultraviolet (EUV) radiation generation. The device includes a mask platform configured to support the mask, hydrogen distribution nozzles configured to eject hydrogen below the mask, and a trajectory correction assembly. The trajectory correction assembly includes a correction nozzle and a gas flow detector. The correction nozzle is configured to distribute at least one rectifying gas to adjust the hydrogen trajectory away from the mask, thereby reducing hydrogen permeation at the mask edges. The gas flow detector is configured to measure changes in the hydrogen flow rate adjusted by the at least one rectifying gas.

Description

Technical Field

[0001] The embodiments disclosed herein relate to an apparatus for reducing hydrogen permeation and a method for manufacturing a semiconductor element. Background Technology

[0002] In recent years, the functional density of semiconductor integrated circuits (ICs), i.e., the number of interconnect components per wafer, has increased. This increase in functional density has been achieved by reducing the size of individual components on the wafer. Semiconductor manufacturing technologies, such as lithography, are needed to meet this ongoing trend of component size reduction by reducing the wavelength of light used in lithography to extreme ultraviolet (EUV) wavelengths. Summary of the Invention

[0003] One embodiment of this disclosure is an apparatus for reducing hydrogen permeation, suitable for extreme ultraviolet (EUV) light domes. The apparatus includes a dome platform configured to support the EUV dome, hydrogen distribution nozzles configured to eject hydrogen below the EUV dome, and a trajectory correction assembly. The trajectory correction assembly includes a correction nozzle disposed between the dome platform and the hydrogen distribution nozzles. The correction nozzles are configured to distribute at least one rectified gas different from hydrogen to adjust the hydrogen trajectory away from the EUV dome, thereby reducing hydrogen permeation at the edges of the EUV dome.

[0004] Another embodiment of this disclosure is a method for manufacturing a semiconductor device. This method includes providing a photomask on a photomask holder. Hydrogen gas is then flowed through the photomask and the photomask holder. Next, a trajectory correction assembly is provided, comprising a correction nozzle and a gas flow detector. The correction nozzle is configured to dispense at least one rectified gas to adjust the hydrogen trajectory away from the photomask, thereby reducing hydrogen permeation at the edges of the photomask. The gas flow detector is configured to measure changes in the hydrogen flow adjusted by the at least one rectified gas. Subsequently, the at least one rectified gas is flowed through the correction nozzle to adjust the hydrogen trajectory away from the photomask.

[0005] Another aspect disclosed herein is a method for manufacturing a semiconductor device. This method includes providing an extreme ultraviolet (EUV) lithography system comprising a mask platform configured to support a mask, hydrogen distribution nozzles configured to eject hydrogen below the mask, a trajectory correction assembly, and a controller. The trajectory correction assembly includes correction nozzles configured to distribute at least one rectifying gas to adjust the hydrogen trajectory away from the mask, thereby reducing hydrogen permeation at the mask's edges; and a gas flow detector configured to measure changes in the hydrogen flow adjusted by the at least one rectifying gas. The controller is coupled to the trajectory correction assembly. This method includes subsequently using the controller to determine whether the change in the hydrogen flow measurement at the gas flow detector is within an acceptable range. In response to the determination that the change in the hydrogen flow measurement is not within an acceptable range, the controller automatically adjusts adjustable parameters of the trajectory correction assembly. Attached Figure Description

[0006] The following detailed description, read in conjunction with the accompanying drawings, will provide the best understanding of this disclosure. It should be emphasized that, in accordance with industry standard practice, the various features are not drawn to scale and are for illustrative purposes only. In fact, the dimensions of the various features can be increased or decreased at will to clarify the discussion.

[0007] Figure 1 This is a schematic diagram illustrating an extreme ultraviolet lithography system according to an embodiment of the present disclosure;

[0008] Figure 2 This is a schematic diagram illustrating details of an extreme ultraviolet lithography machine related to the embodiments disclosed herein;

[0009] Figure 3 This is a schematic illustration of a screen holding mechanism related to some embodiments disclosed herein;

[0010] Figure 4A This is a cross-sectional schematic diagram of the magnification mask holder;

[0011] Figure 4B This is a plan view of the magnifying mask holder;

[0012] Figure 4C These are other planar views illustrating hydrogen permeation at the edge of the magnified photomask;

[0013] Figure 5A and Figure 5B This is a schematic diagram illustrating a hydrogen trajectory and trajectory correction assembly according to an embodiment of the present disclosure;

[0014] Figure 5C This illustrates several nozzles according to embodiments disclosed herein;

[0015] Figure 5D and Figure 5E This is a schematic diagram illustrating the hydrogen trajectory and exhaust nozzle according to the embodiments disclosed herein;

[0016] Figure 5F This is a schematic diagram illustrating several nozzles and several exhaust nozzles according to the embodiments disclosed herein;

[0017] Figure 6 This is a schematic diagram illustrating a feedback control system for a control process according to some embodiments of the present disclosure;

[0018] Figure 7A This illustrates the data collection, analysis, and adjustment (CAT) operation according to some embodiments disclosed herein;

[0019] Figure 7B and Figure 7CThis is a block diagram illustrating a non-limiting example of an airflow pattern recognition system according to one or more embodiments described herein;

[0020] Figure 8 This is a flowchart illustrating a method for controlling a feedback system of an extreme ultraviolet (EUV) radiation source according to an embodiment of the present disclosure;

[0021] Figure 9A and Figure 9B This is a diagram illustrating a controller according to some embodiments disclosed herein.

[0022] [Symbol Explanation]

[0023] 100: Extreme ultraviolet radiation source, extreme ultraviolet light source

[0024] 105: Chamber

[0025] 108: Extreme Ultraviolet Radiation

[0026] 110: Concentrator

[0027] 130: Sensor

[0028] 130a: Sensor, Transmission Image Sensor

[0029] 130c: Sensor

[0030] 130d: Integrated lens interferometer sensor on a sensor / scanner

[0031] 200: Exposure machine, exposure device

[0032] 205: Exposure Chamber

[0033] 210: Cover Platform

[0034] 220: Electrostatic photomask holder, photomask holder

[0035] 221: Electrostatic Chuck

[0036] 250: Dome, Reducing Dome

[0037] 250a: Optical Instruments

[0038] 250b: Optical Instruments

[0039] 250c: Patterned Optical Instruments

[0040] 250d: Reduced projection optical instrument

[0041] 250e: Reduced projection optical instrument

[0042] 252: Substrate

[0043] 255: Absorption layer

[0044] 300: Excitation laser source

[0045] 410: Substrate

[0046] 900: Collection, Analysis, and Adjustment Operations

[0047] 905: Gas Mixer

[0048] 915: Gas Flow Rate Controller

[0049] 920:Y nozzle

[0050] 930: Hydrogen, hydrogen gas flow

[0051] 932: Offset hydrogen gas

[0052] 940: Virtually simulated microenvironment of a reduced-size photomask;

[0053] 950: Edge

[0054] 952: Covering film

[0055] 1000: Track Correction Component

[0056] 1007: Feedback

[0057] 1010: Calibrate the nozzle

[0058] 1012: Nozzle

[0059] 1014: Slit nozzle

[0060] 1016:Y nozzle

[0061] 1020: Rectifying gas

[0062] 1030: Hydrogen Trajectory

[0063] 1050: Gas Flow Detector

[0064] 1070: Exhaust nozzle

[0065] 1080: Vacuum and / or pumping components, exhaust nozzles

[0066] 1090: Exhaust slit

[0067] 1410: Controller

[0068] 1500: Airflow Pattern Recognition System

[0069] 1502: Hydrogen gas flow variable component

[0070] 15021: Parameters

[0071] 1502 N :parameter

[0072] 1504: Update

[0073] 15041: Update parameters

[0074] 1504 N Update parameters

[0075] 1506: Vector Data of Variables

[0076] 15061: Model

[0077] 1506 N :Model

[0078] 1508: Mathematical Model

[0079] 15081: Model

[0080] 1508 N :Model

[0081] 1510: Training

[0082] 1512: Machine Learning Components

[0083] 1514: Classification Algorithm

[0084] 1516: Affected Parts

[0085] 1518: Trajectory Analysis Component

[0086] 1532: Update

[0087] 15321: Update

[0088] 1532 N :renew

[0089] 15341: Variable Vector Data

[0090] 1534 N : Variable vector data

[0091] 1582: Calibration gas flow analysis, calibration gas flow analysis component

[0092] 1590: Calibration Action / Component, Calibration Action

[0093] 2000: Computer Systems

[0094] 2001: Computer

[0095] 2002: Keyboard

[0096] 2003: Mouse

[0097] 2004: Monitor

[0098] 2005: Optical Disc Read-Only Memory (CD-ROM) drive, CD-ROM player

[0099] 2006: Disk Drive

[0100] 2011: Microprocessor Unit

[0101] 2012: Read-only memory

[0102] 2013: Random Access Memory

[0103] 2014: Hard Drive

[0104] 2015: Bus

[0105] 2021: CD-ROM

[0106] 2022: Disk

[0107] BF: Bottom

[0108] d1: Distance

[0109] DP1: Shock absorber

[0110] DP2: Shock absorber

[0111] EUV: Extreme ultraviolet radiation, radiation

[0112] M1: Mathematical Model

[0113] MN: Mathematical Model

[0114] MF: Main Layer

[0115] M'1: Model

[0116] M'N: Model

[0117] P1: Parameters

[0118] PN: parameter

[0119] PP1: Base plate

[0120] PP2: Base plate

[0121] P'1: Update parameters

[0122] P'N: Update parameters

[0123] S910: Operation

[0124] S920: Operation

[0125] S930: Operation

[0126] S1010: Operation

[0127] S1020: Operation

[0128] S1030: Operation

[0129] S1040: Operation

[0130] S1050: Operation

[0131] S1060: Operation

[0132] ZE: Extreme Ultraviolet Radiation Detailed Implementation

[0133] It should be understood that the following disclosure provides many different embodiments or examples to implement different features of the invention. The specific embodiments or examples of components and arrangements described below are used to simplify this disclosure. These are, of course, merely examples and not intended to be limiting. For example, the dimensions of the components are not limited to the ranges or values ​​disclosed, but may vary depending on the process conditions of the equipment and / or the desired characteristics. Furthermore, in the description, the first feature is formed above or on the second feature, which may include embodiments where the first and second features are formed in direct contact, or embodiments where additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. For simplicity and clarity, various features may be drawn at any scale.

[0134] In addition, spatial relation terms such as “beneath,” “below,” “lower,” “above,” “upper,” and similar terms may be used to concisely describe the relationship between one component or feature as illustrated in the accompanying drawings and another component or feature (or other components or features). Spatial relation terms, in addition to the directions depicted in the figures, are intended to encompass different orientations of the device in use or operation. The device / equipment may be oriented in other ways (rotated 90 degrees or other directions), and the spatial relation descriptors used herein may be interpreted accordingly. Furthermore, the term “made of” may mean “comprising” or “consisting of.” In this disclosure, unless otherwise stated, the term “one of A, B, and C” means “A, B, and / or C” (A, B, C, A and B, A and C, B and C, or A and B and C), and does not mean an element of A, an element of B, and an element of C.

[0135] This disclosure generally relates to extreme ultraviolet (EUV) lithography systems and methods. More specifically, it relates to an apparatus and method for cleaning a shrink-up mask holder used to hold a shrink-up mask in an EUV lithography exposure machine.

[0136] Because gas molecules absorb extreme ultraviolet (EUV) light, the EUV lithography system is kept in a vacuum or low-pressure environment to avoid UV light intensity loss and to prevent adverse reactions of ionized gas on the wafer to be lithographically patterned, the multiple layers on the wafer, and the optical components of the EUV lithography exposure equipment. Therefore, an electrostatic photomask holder is used to hold the photomask in the EUV lithography system. However, due to the force used by the photomask holder to hold the photomask, contaminant particles on the photomask holder may damage the photomask holder and the photomask itself. Furthermore, these contaminant particles on the photomask may cause minute distortions on the photomask surface, resulting in distortion of the pattern to be produced on the wafer.

[0137] To suppress the deposition of particulates or contaminants on the photomask or photomask holder, an airflow, such as a hydrogen gas flow, is supplied to the photomask holder. However, during extreme ultraviolet (EUV) lithography, the hydrogen gas flow, due to its low molecular weight, deflects towards the surface of the photomask. This deflected hydrogen accumulates / deposits at the edges of the photomask and seeps into the space between the photomask and the cover film. This hydrogen permeation on the photomask (also known as a "bubbling problem") creates bubbles at the edges of the photomask and causes the cover film to peel off. The unwanted particles generated by the peeled film can interfere with further processing steps. Therefore, it is beneficial to avoid unwanted particles caused by hydrogen permeation as part of the lithography process.

[0138] One of the objectives of this disclosure is to clean the reduction mask holder while reducing downtime of the exposure equipment and minimizing damage to the reduction mask holder and the reduction mask.

[0139] Figure 1 This is a schematic diagram illustrating an extreme ultraviolet (EUV) lithography system having a laser-generated plasma (LPP)-based EUV radiation source according to some embodiments of this disclosure. The EUV lithography system includes an EUV radiation source 100 that generates EUV radiation, an exposure stage 200 such as a scanner, and an excitation laser source 300. Figure 1As shown, in some embodiments, the extreme ultraviolet (EUV) radiation source 100 and the exposure stage 200 are mounted on the main layer MF of the cleanroom, while the excitation laser source 300 is mounted on the bottom layer BF located below the main layer MF. The EUV radiation source 100 and the exposure stage 200 are respectively placed on base plates PP1 and PP2 via shock absorbers DP1 and DP2. The EUV radiation source 100 and the exposure stage 200 are coupled to each other via a coupling mechanism, which may include a focusing unit.

[0140] This lithography system is an extreme ultraviolet (EUV) lithography system, designed to expose a photoresist layer using extreme ultraviolet light (which can also be interchanged with extreme ultraviolet radiation). The photoresist layer is a material sensitive to EUV light. The EUV lithography system utilizes an EUV radiation source 100 to generate EUV light, for example, EUV light with a wavelength of approximately 1 nm to approximately 100 nm. In a specific example, the EUV radiation source 100 generates EUV light with a wavelength concentrated at approximately 13.5 nm.

[0141] Exposure stage 200 includes multiple reflective optical components, such as convex / concave / plane mirrors, a mask holding mechanism including a mask platform, and a wafer holding mechanism. Exposure stage 200 also includes an exposure chamber 205, which surrounds all the optical components, mask holding mechanism, and wafer holding mechanism of the exposure stage 200. Exposure chamber 205 provides a vacuum environment for the exposure stage 200 to avoid loss of extreme ultraviolet radiation intensity due to gas absorption.

[0142] Figure 2 This is a simplified schematic diagram illustrating details of an extreme ultraviolet (EUV) lithography apparatus according to one embodiment of the present disclosure, showing the exposure of a photoresist-coated substrate 410 with a patterned beam of EUV light. The exposure apparatus 200 is an integrated circuit lithography apparatus, such as a stepper, scanner, step-scanning system, direct-write system, or device using a contact and / or proximity mask. The exposure apparatus 200 includes one or more optical instruments 250a and 250b to, for example, use an EUV light beam to irradiate a patterning optical instrument 250c, such as a reduction mask, to generate a patterned beam; and one or more reduction projection optical instruments 250d and 250e to project the patterned beam onto the substrate 410. Mechanical components (not shown) may be provided to generate controllable relative movement between the substrate 410 and the patterning optical instrument 250c. Figure 2 As further shown, the extreme ultraviolet lithography machine includes an extreme ultraviolet light source 100, which includes an extreme ultraviolet radiator ZE that emits extreme ultraviolet light in a chamber 105. This extreme ultraviolet light is reflected by a condenser 110 and enters the exposure apparatus 200 along a path to irradiate the substrate 410.

[0143] As used herein, the term "optical instrument" is broadly understood to include, but is not limited to, one or more components that reflect and / or transmit and / or manipulate incident light, and includes, but is not limited to, one or more lenses, windows, filters, optical wedges, prisms, prism gratings, graduated mirrors, transmission optical fibers, etalons, diffusers, homogenizers, detectors and other instrument components, apertures, rotating prisms and mirrors containing multilayer mirrors, near-normal incident mirrors, tangential incident mirrors, one-way mirrors, diffuse mirrors, and combinations thereof. Furthermore, unless specifically stated otherwise, as used herein, the term "optical instrument" is not intended to be limited to components that operate alone within one or more specific wavelength ranges, such as extreme ultraviolet output wavelengths, radiated laser wavelengths, wavelengths suitable for metrology, or other specific wavelengths.

[0144] In several embodiments disclosed herein, the substrate 410 coated with photoresist is a semiconductor wafer, such as a silicon wafer to be patterned or other types of wafers.

[0145] Figure 3 This is a schematic illustration of a curtain holding mechanism according to one embodiment of the present disclosure. The following description is based on... Figure 2 and Figure 3 Extreme ultraviolet (EUV) radiation generated by extreme ultraviolet (EUV) radiation source 100 is guided by reflective optical components to a mask 250 fixed on a mask platform 210. In some embodiments, the mask platform 210 includes an electrostatic photomask holder 220 (which may be interchangeably replaced by an electrostatic chuck or e-chuck) to secure the mask 250.

[0146] In this disclosure, the terms mask, photomask, and condenser mask are used interchangeably. In this embodiment, the condenser mask 250 is a reflective mask. In one embodiment, the condenser mask 250 includes a substrate 252 composed of a suitable material, such as a low thermal expansion material or fused silica. In several embodiments, the substrate material includes titanium dioxide-doped silicon dioxide or other suitable low thermal expansion materials. The mask 250 includes multiple reflective multilayers (MLs) (not shown) deposited on the substrate 252. The multilayers include several pairs of thin films, such as molybdenum-silicon (Mo / Si) thin film pairs (e.g., in each thin film pair, a molybdenum layer is on top of or below a silicon layer). Alternatively, the multilayers may include molybdenum-beryllium (Mo / Be) thin film pairs or other suitable materials configured to highly reflect extreme ultraviolet light. The mask 250 may also include a capping layer (not shown), such as ruthenium (Ru), deposited on the multilayers to provide protection. The mask 250 also includes an absorption layer 255, such as a tantalum boron nitride (TaBN) layer, deposited over the multilayer. The absorption layer 255 is patterned to define an integrated circuit (IC). Alternatively, another reflective layer may be deposited over the multilayer and patterned to define an integrated circuit, thereby forming an extreme ultraviolet phase-shifting mask.

[0147] Figure 4A This is a cross-sectional schematic diagram of the magnification mask holder 220. Figure 4B This is a plan view of the magnification mask holder 220. Figure 4C This is another plan view illustrating hydrogen permeation at the edge 950 of the magnifying mask 250. The magnifying mask 250 and the electrostatic chuck 221 are positioned such that the EUV radiation supplied by the extreme ultraviolet radiation source is focused when it reaches the surface of the semiconductor workpiece. The magnifying mask microenvironment (RME) provides contamination and environmental control in semiconductor manufacturing operations through equipment and process isolation. The magnifying mask microenvironment is a closed space configured to separate operators from equipment, thereby maintaining a locally controlled process environment. The magnifying mask microenvironment allows equipment loading and maintenance. In some embodiments, a dummy magnifying mask microenvironment (RME) 940 may be constructed without any internal components of the structure having a magnifying mask microenvironment. In this configuration, when the dummy magnifying mask microenvironment allows equipment loading and maintenance, a Y-nozzle 920 is installed in the dummy magnifying mask microenvironment (RME) 940, and hydrogen gas 930 is ejected along the Y-axis. The y-axis is perpendicular to the x-axis of the magnification mask and is an axis that moves along the hydrogen gas and is perpendicular to the z-axis, which is substantially orthogonal to the surface of the magnification mask.

[0148] Several sensors 130 may be disposed on the lower surface of the electrostatic chuck 221. During operation, the sensors 130 are positioned close to the magnification mask 250, for example, near the edge of the magnification mask 250. The sensors 130 may be fixedly mounted on the electrostatic chuck 221 and can be used to evaluate and / or optimize the imaging performance of the extreme ultraviolet irradiation machine. One or more sensors 130 may include a lower plate that is transparent to radiation, such as radiation in the wavelength of extreme ultraviolet light, or may include a pattern of transparent and opaque portions. The sensors 130 may include optical elements suitable for guiding or focusing the received radiation to a transducer, such as a fiber optic plate or a microlens array. The transducer may be a device that converts radiation into an electronic signal, such as a photodiode, a photocoupler camera, or a metal-oxide-semiconductor camera. The output of the transducer can be used to control, correct, or optimize the operation of the extreme ultraviolet irradiation machine.

[0149] In some embodiments, sensor 130a may be a transmission image sensor (TIS). The TIS is used to measure the position of a projected spatial image of the mask pattern on the magnifying mask 250. The projected image may be a line pattern, where the lines have wavelengths equivalent to the wavelength of the radiation. The measurements of sensor 130a can be used to measure six degrees of freedom of position of the mask relative to the magnifying mask platform, such as three degrees of freedom of movement and three degrees of freedom of rotation. Additionally, magnification and scaling of the projected pattern can also be measured by the TIS. The TIS can measure the effects of pattern position and illumination settings, such as standard deviation and numerical aperture of the lens. The TIS can be used to align the magnifying mask 250 with the substrate, focus extreme ultraviolet radiation onto a target area on the substrate, measure the effectiveness of an extreme ultraviolet irradiation machine, and / or measure optical properties such as pupil shape, coma, spherical aberration, astigmatism, and field curvature.

[0150] In some embodiments, sensor 130c may be a spot sensor configured to measure the dose of extreme ultraviolet (EUV) radiation at the substrate level. The EUV radiation measured by the spot sensor at the substrate level can be used to calculate the EUV radiation absorbed by mirrors in the path of EUV radiation to compensate for the effects of EUV radiation loss, which can improve the optical performance of the EUV irradiation equipment.

[0151] In some embodiments, sensor 130d is an integrated lens interferometer (ILIAS) on a scanner. The integrated lens interferometer sensor on a scanner is an interferometric wavefront measurement device that performs high-order static measurements of lens aberrations. The integrated lens interferometer sensor 130d on a scanner can be used to measure wavefront errors in extreme ultraviolet (EUV) radiation.

[0152] It should be noted that other sensors can be included in the magnification mask platform to achieve the target function. Different sensors can be combined into a single sensor to achieve multiple functions. For example, a transmission image sensor and an integrated lens interferometer sensor on a scanner can be combined to measure the projected spatial image and wavefront error.

[0153] like Figure 5AAs shown, the Y-nozzle 920 is a nozzle configured to eject gas along the y-axis and perpendicular to the x and z axes. During extreme ultraviolet lithography, the hydrogen gas stream 930 ejected from the Y-nozzle 920 along the y-axis deflects towards the surface of the photomask 250 due to its light molecular weight. Because hydrogen is lighter than air, it rises relative to air in the vertical direction. The deflected hydrogen 932 accumulates / deposits at the edge 950 of the photomask 250 and permeates into the space between the photomask 250 and the cover film 952. This hydrogen permeation on the photomask 250 (also known as a "bubbling problem") creates bubbles at the edge 950 of the photomask 250 and causes the cover film 952 to peel off. The unwanted particles generated by the peeled film can interfere with further processing steps. Therefore, it is beneficial to prevent unwanted particles caused by hydrogen permeation as part of the lithography process.

[0154] like Figure 5B As shown, the correction nozzle 1010 of the trajectory correction assembly 1000 is configured to eject at least one rectifying gas 1020 to adjust the hydrogen trajectory 1030 away from the mask 250, thereby reducing hydrogen permeation at the edge 950 of the magnifying mask 250. The ability of this at least one rectifying gas 1020 to force the hydrogen trajectory 1030 away from the magnifying mask 250 and reduce hydrogen permeation at the edge 950 of the magnifying mask 250 is proportional to the molecular weight (density, if pressurized) of this at least one rectifying gas 1020. In some embodiments, this at least one rectifying gas 1020 comprises a flushing gas, such as helium (He), neon (Ne), and argon (Ar). In some embodiments, this at least one rectifying gas 1020 is determined based on the molecular weight (density) of the combination of flushing gases depending on the hydrogen trajectory 1030. When the molecular weight of the at least one rectifying gas 1020 is greater than the molecular weight of the hydrogen gas stream 930, using at least one rectifying gas 1020 with a high molecular weight (density) may affect the process or other components located in the exposure chamber 205. Therefore, in some embodiments, the molecular weight (density) of the at least one rectifying gas 1020 (or the output pressure of the calibration nozzle 1010) is determined not to be higher than the molecular weight required to reduce hydrogen permeation.

[0155] Figure 5C This illustration depicts several nozzles and several exhaust nozzles according to embodiments disclosed herein. For example... Figure 5C As shown, in some embodiments, the calibration nozzle 1010 includes a plurality of nozzles 1012 arranged along the X direction. In other embodiments, the calibration nozzle 1010 is a slit-shaped nozzle 1014 having a smaller width in the Z direction than in the X direction. The distance d1 (center-to-center distance) in the Z direction between the Y nozzle 1016 for hydrogen and the calibration nozzle 1010 is about 1 mm to about 20 mm.

[0156] In some embodiments, the trajectory correction assembly 1000 also includes an exhaust nozzle 1070 to adjust the hydrogen trajectory away from the mask, thereby reducing hydrogen permeation at the edge of the magnifying mask (mask).

[0157] Figure 5D and Figure 5E This is a schematic diagram illustrating the hydrogen trajectory and exhaust nozzle 1070 according to an embodiment of this disclosure. Figure 5D As shown, the exhaust nozzle 1070 is configured to adjust the hydrogen trajectory 1030 by forcibly expelling hydrogen 930 away from the mask, thereby reducing hydrogen permeation at the edge 950 of the magnification mask 250. In some embodiments, the exhaust nozzle 1070 is connected to a vacuum and / or pumping assembly 1080. Figure 5E As shown, the ability of the exhaust nozzle 1070 to force the hydrogen trajectory 1030 away from the edge 950 of the magnification mask 250 is proportional to the exhaust pressure, which is controlled and adjusted by the controller 1410. For example, as Figure 5D As shown, the exhaust nozzle 1070 and the Y nozzle 920 are located at the same level / distance from the lower surface of the magnifying mask 250. In some embodiments, such as Figure 5E As shown, the exhaust nozzle 1070 may be located at a greater distance from the bottom surface of the magnifying glass 250 than the Y nozzle 920, in order to adjust the hydrogen trajectory 1030 by forcing the hydrogen gas 930 away from the magnifying glass 250. In some embodiments, the exhaust nozzle 1070 is configured to work in conjunction with a correction nozzle 1010 adjacent to the Y nozzle 920 for hydrogen to adjust the hydrogen trajectory 1030.

[0158] like Figure 5F As shown, in some embodiments, the exhaust nozzle 1070 includes a plurality of exhaust nozzles 1080. In some embodiments, the plurality of exhaust nozzles 1080 are arranged in the exhaust slit 1090. In some embodiments, the exhaust nozzle 1070 is configured to adjust the orientation of the plurality of exhaust nozzles 1080 of the correction nozzle arranged in the exhaust slit 1090 to adjust the flow of hydrogen. In some embodiments, the plurality of exhaust nozzles 1080 are configured to work in conjunction with the correction nozzle 1010 to adjust the hydrogen trajectory.

[0159] Figure 6This is an exemplary schematic diagram illustrating an apparatus for reducing hydrogen permeation through a screen according to some embodiments of the present disclosure. In some embodiments, a hydrogen trajectory corrected using at least one rectifying gas 1020 is measured by a gas flow detector 1050. In some embodiments, the change in the hydrogen flow corrected using at least one rectifying gas 1020 is used as feedback 1007 to a controller 1410 to adjust the gas pressure from the correction nozzle 1010. In some embodiments, the trajectory correction assembly 1000 includes several flushing gases, including, for example, helium (He), neon (Ne), argon (Ar), deuterium (D2), and / or nitrogen (N2), and measures the change in the hydrogen flow corrected by the correction nozzle 1010. In some embodiments, the signal from the gas flow detector 1050 is used as feedback to adjust the gas pressure from the correction nozzle 1010. In some embodiments, this feedback-connected gas mixer 905 mixes two or more of at least one rectified gas 1020 to adjust the hydrogen gas flow path below the shroud 250 according to molecular weight. In some embodiments, the trajectory correction assembly 1000 further includes a gas flow rate controller 915 configured to adjust the hydrogen trajectory away from the shroud 250.

[0160] In some embodiments, the provided feedback mechanism may further send a notification based on hydrogen flow measurement information indicating that the hydrogen flow measurement is within an acceptable range. In some embodiments, this notification includes a calibrated hydrogen flow from a hydrogen nozzle using calibrated nozzle 1010. In some embodiments, this notification also includes the gas pressure of one or more at least one rectified gas 1020. In some embodiments, this notification also includes the calibration nozzle 1010 coupled to the calibrated mask microenvironment adjacent to the calibrated mask. Figure 4B The angle of the microenvironment 940 of the magnifying mask is between the calibration nozzle 1010 and the surface of the magnifying mask. In some embodiments, based on the generated notification, this feedback further sends notifications to a first external device associated with the gas flow rate controller 915 and a second external device associated with the gas pressure controller.

[0161] In some embodiments, an airflow pattern recognition system 1500 employs one or more imaging or visualization techniques. Figure 7B and Figure 7CAs shown, the gas flow of hydrogen and at least one rectifier gas is monitored. Gas flow patterns with various gas flow conditions (gas type, flow rate, gas velocity, pressure, temperature, etc.) are corrected and accumulated in a storage device (memory) as gas flow pattern data. In some embodiments, a hydrogen accumulation pattern is also obtained and stored. In some embodiments, the correlation between one or more parameters of the hydrogen gas flow conditions and the rectifier gas is analyzed and obtained using analytical methods, such as machine learning methods. In some embodiments, gas flow pattern data is obtained before the extreme ultraviolet (EUV) lithography operation of the actual wafer fabrication process. During the EUV lithography operation, the gas flow patterns of hydrogen and the rectifier gas are monitored and compared with the accumulated gas flow pattern data. Based on the comparison results, one or more gas flow parameters used for hydrogen and / or the rectifier gas can be adjusted.

[0162] Figure 7A This illustrates a data collection, analysis, and adjustment (CAT) operation 900 according to some embodiments disclosed herein. In operation S910, the data collection and analysis operation 900 begins by collecting Y-nozzle airflow data measured by a gas flow detector. Next, in operation S920, the Y-nozzle airflow data is analyzed. Finally, in operation S930, the Y-nozzle airflow is adjusted based on the Y-nozzle airflow analysis. When analyzing the Y-nozzle airflow data, the trajectory correction component 1000 uses multiple pattern recognition techniques, such as machine learning, big data mining, and neural networks.

[0163] Figure 7B and Figure 7C This is a block diagram illustrating a non-limiting example of an airflow pattern recognition system 1500 according to one or more embodiments described herein. Figure 7B As shown, the airflow pattern recognition system 1500 includes a hydrogen flow variable component 1502 that receives an update 1504. The update 1504 includes changes or updates received from the controller 1410 to one or more parameters relating to gas flow conditions related to hydrogen and correction gases, such as gas type, flow rate, gas velocity, pressure, and temperature. In some embodiments, the controller 1410 is configured to update control variables to remove or mitigate weaknesses detected by hydrogen permeation or hydrogen flow analysis, thereby incorporating new correction actions / elements 1590. In some embodiments, the update 1504 may be received from another suitable controller or database. In response to the update 1504, the hydrogen flow variable component 1502 is configured to generate variable vector data 1506. The variable vector data 1506 represents the hydrogen flow variable component 1502 mathematically, for example, using a mathematical model.

[0164] Machine learning component 1512 is configured to receive variable vector data 1506 from hydrogen flow variable component 1502 and to identify affected portions 1516 using classification algorithm 1514 (or another suitable classification or machine learning technique). Affected portions 1516 comprise a subset of mathematical modules affected by update 1504. In some implementations, classification algorithm 1514 and / or machine learning component 1512 may label or annotate affected portions 1516 that indicate the severity of the affected portion.

[0165] In some implementations, a classification algorithm 1514 is pre-trained. For example, gas flow pattern data can be acquired and trained before the extreme ultraviolet lithography operation of the actual wafer fabrication process. Based on the training results, the classification algorithm 1514 is configured to learn how specific variables (e.g., molecular weight) affect the mathematical model 1508 and / or how to adjust / remedy trajectories in the content of the mathematical model 1508. In some implementations, a machine learning component 1512 is configured to identify the affected portion 1516 based on the variable vector data 1506.

[0166] The trajectory analysis component 1518 is configured to receive the affected portion 1516 or related information. The trajectory analysis component 1518 performs a correction gas flow analysis 1582 based on the affected portion 1516. For example, the trajectory analysis component 1518 combines the correction gas flow analysis 1582 and the hydrogen flow variable component 1502 on the mathematical model 1508, and determines a correction action 1590 using machine learning techniques (e.g., classification algorithm 1514), represented by the affected portion 1516. In other words, in some embodiments, based on machine learning, the trajectory analysis component 1518 identifies the extent of an update to the mathematical model 1508 and how such an update can be provided.

[0167] In some implementations, the trajectory analysis component 1518 is configured to generate one or more correction actions. Correction action 1590 represents a newly generated mathematical model 1508 that can be used to remedy the affected portion 1516. Feedback to generate the mathematical model 1508 can be provided immediately by applying a correction gas flow analysis based on a hydrogen flow analysis.

[0168] like Figure 7C As shown, the airflow pattern recognition system 1500 includes a calibration gas flow analysis component 1582 and a machine learning component 1512. The calibration gas flow analysis component 1582 receives parameters P1 to PN (parameters 15021 to 1502). N ) and update parameters P'1 to P'N (update parameters 15041 to 1504) N), where N is any positive integer. In some embodiments, the calibration gas flow analysis component 1582 is configured according to the received parameters 15021 to 1502. N and update parameter 15041 to update parameter 1504 N To generate mathematical models M1 to MN (models 15061 to 1506) N ) and models M'1 to M'N (models 15081 to 1508) N ), and send them to machine learning component 1512.

[0169] In some implementations, the machine learning component 1512 is updated according to specific updates 15321 to 1532. N To compare mathematical model M1 and model M'1, we can identify how the models have changed. Hydrogen gas flow variable component 1502 is updated from 15321 to 1532. N To generate variable vector data 15341 to variable vector data 1534 N To identify how specific variables of the variable vector data 15341 affect model M'1 relative to mathematical model M1. In response, machine learning component 1512 updates classification algorithm 1514 by performing training 1510. Thus, machine learning component 1512 can identify how models (e.g., mathematical model M1, mathematical model MN, etc.) change relative to a specific update 1532, and how those models will change according to the specific variables derived by update 1532 through hydrogen flow variable component 1502. Therefore, in some embodiments, classification algorithm 1514 is trained according to parameters P1 to PN (parameters 15021 to 1502). N The variables are used to learn and correct the results of the gas flow analysis component 1582.

[0170] Figure 8This is a flowchart illustrating a method for controlling a feedback system of an extreme ultraviolet (EUV) radiation source according to an embodiment of the present disclosure. The method includes, in operation S1010, providing a magnifying glass onto a magnifying glass holder. In operation S1020, hydrogen gas is ejected toward the magnifying glass. A trajectory correction assembly includes a correction nozzle and a gas flow detector. The correction nozzle is configured to dispense at least one rectifying gas to adjust the hydrogen trajectory away from the glass, thereby reducing hydrogen permeation at the edge of the glass. The gas flow detector is configured to measure changes in the hydrogen flow adjusted by the at least one rectifying gas. Next, in operation S1030, at least one rectifying gas is ejected through the correction nozzle to adjust the hydrogen trajectory away from the glass. In operation S1040, the hydrogen flow is measured by the gas flow detector measuring the changes in the hydrogen flow adjusted by the at least one rectifying gas. Therefore, in operation S1050, it is determined whether the change in hydrogen flow is within an acceptable range. Finally, in operation S1060, in response to the fact that the change in hydrogen flow measurement is not within the acceptable range of the change in hydrogen flow measurement, the adjustable parameters of the trajectory correction component are automatically adjusted to set the change in hydrogen flow measurement within the acceptable range.

[0171] Figure 9A and Figure 9B This illustration depicts the configuration of controller 1410 according to some embodiments of this disclosure. In some embodiments, computer system 2000 is used as controller 1410. In some embodiments, computer system 2000 performs the functions of controller as previously defined above.

[0172] Figure 9A This is a schematic diagram illustrating a computer system. All or part of the processes, methods, and / or operations described above can be implemented using computer hardware and the computer programs it executes. Figure 9A In the computer system 2000, there is a computer 2001, which includes an optical disc read-only memory (e.g., an optical disc read-only memory or a digital multifunction optical disc read-only memory), an optical disc drive 2005 and a disk drive 2006, a keyboard 2002, a mouse 2003, and a monitor 2004.

[0173] Figure 9B This is a schematic diagram illustrating the internal configuration of a computer system (2000). Figure 9BIn addition to the optical disc drive 2005 and the disk drive 2006, the computer 2001 has one or more processors, such as a microprocessor unit (MPU) 2011; read-only memory 2012, in which programs, such as boot programs, are stored; random access memory (RAM) 2013 connected to the microprocessor unit 2011, in which commands for application programs are temporarily stored and a temporary storage area is provided; a hard disk 2014, in which application programs, system programs, and data are stored; and a bus 2015 connecting the microprocessor unit 2011, the read-only memory 2012, and the like. It should be noted that the computer 2001 may include a network card (not shown) to provide connectivity to a local area network.

[0174] The program that enables the computer system 2000 to execute the functions of the device to control the device in the above embodiments can be stored on an optical disc 2021 or a disk 2022 inserted into an optical disc drive 2005 or a disk drive 2006, and transferred to a hard disk 2014. Alternatively, this program can be transferred to the computer 2001 via a network (not shown) and stored in the hard disk 2014. During execution, this program is loaded into random access memory 2013. This program can be loaded from an optical disc 2021, a disk 2022, or directly from a network. This program does not need to include, for example, an operating system (OS) or third-party programs to enable the computer 2001 to execute the functions of the controller 1410 in the above embodiments. This program may contain only an instruction portion to call appropriate functions (modules) in control mode and obtain the desired results.

[0175] In several embodiments, a calibration nozzle is provided to adjust the hydrogen trajectory away from the mask. Such calibration prevents hydrogen permeation at the edges of the magnifying mask (mask), thereby increasing the lifespan of the magnifying mask, increasing the productivity of the extreme ultraviolet lithography system, and reducing the cost of maintaining the magnifying mask.

[0176] It will be understood that not all advantages have necessarily been discussed here, and not all implementations or examples require any particular advantages; other implementations or examples may offer different advantages.

[0177] One embodiment of this disclosure is an apparatus for reducing hydrogen permeation, suitable for extreme ultraviolet (EUV) light domes. The apparatus includes a dome platform configured to support the EUV dome, hydrogen distribution nozzles configured to eject hydrogen below the EUV dome, and a trajectory correction assembly. The trajectory correction assembly includes a correction nozzle disposed between the dome platform and the hydrogen distribution nozzles. The correction nozzles are configured to distribute at least one rectified gas different from hydrogen to adjust the hydrogen trajectory away from the EUV dome, thereby reducing hydrogen permeation at the edges of the EUV dome.

[0178] In some embodiments, the device further includes a gas flow detector configured to measure changes in hydrogen flow regulated by at least one rectified gas. In some embodiments, the device further includes a gas mixer configured with two or more rectified gases. In some embodiments, the device further includes a gas flow rate controller configured to adjust the hydrogen trajectory away from the extreme ultraviolet (EUV) light hood. In some embodiments, the device includes a plurality of exhaust nozzles configured to force hydrogen away from the EUV light hood. In some embodiments, the calibration nozzle comprises a plurality of nozzles arranged in a slit.

[0179] Another embodiment of this disclosure is a method for manufacturing a semiconductor device. This method includes providing a photomask on a photomask holder. Hydrogen gas is then flowed through the photomask and the photomask holder. Next, a trajectory correction assembly is provided, comprising a correction nozzle and a gas flow detector. The correction nozzle is configured to dispense at least one rectified gas to adjust the hydrogen trajectory away from the photomask, thereby reducing hydrogen permeation at the edges of the photomask. The gas flow detector is configured to measure changes in the hydrogen flow adjusted by the at least one rectified gas. Subsequently, the at least one rectified gas is flowed through the correction nozzle to adjust the hydrogen trajectory away from the photomask.

[0180] In some embodiments, the flow of hydrogen and at least one rectified gas is then monitored. Next, based on the monitoring results of the hydrogen and at least one rectified gas, the flow of at least one rectified gas is adjusted. In some embodiments, hydrogen flow is measured using a gas flow detector that detects changes in the hydrogen flow rate adjusted by at least one rectified gas. Next, it is determined whether the change in the hydrogen flow measurement is within an acceptable range. If the change in the hydrogen flow measurement is not within an acceptable range, the adjustable parameters of the trajectory correction component are automatically adjusted to set the change in hydrogen flow within an acceptable range. In some embodiments, the pressure of several exhaust nozzles configured to force the expelled hydrogen away from the magnification mask is adjusted. In some embodiments, the direction of several nozzles of the correction nozzle arranged in the slit is adjusted to adjust the hydrogen flow. In some embodiments, the flow rate of a gas flow rate controller is adjusted, wherein the gas flow rate controller is configured to adjust the hydrogen trajectory away from the magnification mask. In some embodiments, the distance between the Y nozzle for hydrogen and the correction nozzle is adjusted from 1 mm to 20 mm to adjust the hydrogen flow.

[0181] Another aspect disclosed herein is a method for manufacturing a semiconductor device. This method includes providing an extreme ultraviolet (EUV) lithography system comprising a mask platform configured to support a mask, hydrogen distribution nozzles configured to eject hydrogen below the mask, a trajectory correction assembly, and a controller. The trajectory correction assembly includes correction nozzles configured to distribute at least one rectifying gas to adjust the hydrogen trajectory away from the mask, thereby reducing hydrogen permeation at the mask's edges; and a gas flow detector configured to measure changes in the hydrogen flow adjusted by the at least one rectifying gas. The controller is coupled to the trajectory correction assembly. This method includes subsequently using the controller to determine whether the change in the hydrogen flow measurement at the gas flow detector is within an acceptable range. In response to the determination that the change in the hydrogen flow measurement is not within an acceptable range, the controller automatically adjusts adjustable parameters of the trajectory correction assembly.

[0182] In some embodiments, a gas mixer is provided to mix two or more rectified gases according to their molecular weight. In some embodiments, a controller is configured to control the gas mixture to change the trajectory of one or both of the hydrogen nozzle and at least one rectified gas. In some embodiments, the controller is configured to control the angle of the correction nozzle relative to the surface of the hood platform facing the correction nozzle. In some embodiments, the controller adjusts the gas pressure of at least one rectified gas. In some embodiments, a plurality of exhaust nozzles are provided to force hydrogen gas away from the hood. In some embodiments, the controller is configured to send a notification containing the gas pressures of hydrogen and at least one rectified gas.

[0183] It will be understood that not all advantages have necessarily been discussed here, and not all implementations or examples require any particular advantages; other implementations or examples may offer different advantages.

[0184] The foregoing outlines the features of several embodiments or examples to enable those skilled in the art to better understand the nature of this disclosure. Those skilled in the art should understand that they can easily use this disclosure as a basis to design or modify other processes and structures to achieve the same purpose and / or the same advantages as the embodiments or examples described herein. Those skilled in the art should also understand that this equivalent architecture does not depart from the spirit and scope of this disclosure, and that they can make various changes, substitutions, and modifications without departing from the spirit and scope of this disclosure.

Claims

1. A device for reducing hydrogen permeation, suitable for an extreme ultraviolet light screen, characterized in that, The device includes: A dome platform is configured to support the extreme ultraviolet light dome; A hydrogen distribution nozzle, configured to eject hydrogen gas below the extreme ultraviolet light screen; and A trajectory correction assembly includes a correction nozzle disposed between the dome platform and the hydrogen distribution nozzle. The calibration nozzle is configured to dispense at least one rectified gas different from the hydrogen gas, so as to adjust the trajectory of the hydrogen gas away from the extreme ultraviolet light screen by contacting a flow of the hydrogen gas, thereby reducing hydrogen gas penetration into the extreme ultraviolet light screen.

2. The apparatus according to claim 1, characterized in that, The device also includes a gas flow detector configured to measure a change in the flow of the hydrogen gas adjusted by the at least one rectified gas.

3. The apparatus according to claim 1, characterized in that, The device also includes a gas mixer configured to mix two or more rectified gases.

4. The apparatus according to claim 1, characterized in that, The device also includes a gas flow rate controller configured to adjust the trajectory of the hydrogen gas away from the extreme ultraviolet light screen.

5. The apparatus according to claim 1, characterized in that, The device also includes a configuration of multiple exhaust nozzles to force the hydrogen gas away from the extreme ultraviolet light screen.

6. The apparatus according to claim 1, characterized in that, The correction nozzle comprises multiple nozzles arranged in a slit.

7. A method for manufacturing a semiconductor device, characterized in that, The method includes: Provide a 1x shrink mask on a 1x shrink mask holder; A stream of hydrogen gas is passed through the magnifying glass and the magnifying glass holder; A trajectory correction component is provided, wherein the trajectory correction component includes: A calibration nozzle, configured to dispense at least one rectified gas different from the hydrogen, to adjust the trajectory of the hydrogen away from the magnification mask, thereby reducing hydrogen permeation into the magnification mask; and A gas flow detector, configured to measure a change in the flow of hydrogen gas adjusted by the at least one rectified gas; and The at least one rectified gas is passed through the calibration nozzle to adjust the trajectory of the hydrogen away from the magnification mask by contacting the flow of the hydrogen.

8. The method according to claim 7, characterized in that, The method also includes: Monitoring multiple flows of the hydrogen and the at least one rectified gas; and The flow of the at least one rectified gas is adjusted based on multiple monitoring results of the hydrogen and the at least one rectified gas.

9. The method according to claim 7, characterized in that, The method also includes: A hydrogen flow measurement is performed by a gas flow detector that detects the change in the flow of hydrogen adjusted by at least one rectified gas. Determine whether a change in the hydrogen flow measurement is within an acceptable range; as well as If the change in the hydrogen flow measurement is not within the acceptable range of the hydrogen flow measurement, the trajectory correction component automatically adjusts multiple adjustable parameters to set the change in the hydrogen flow measurement within the acceptable range.

10. The method according to claim 9, characterized in that, The method also includes: Adjust the pressure of a plurality of exhaust nozzles, which are configured to force the hydrogen gas away from the condenser.

11. The method according to claim 9, characterized in that, The method also includes: The direction of one of the nozzles of the correction nozzle arranged in a slit is adjusted to adjust the flow of hydrogen.

12. The method according to claim 9, characterized in that, The method also includes: Adjust the flow rate of a gas flow rate controller configured to adjust the trajectory of the hydrogen gas away from the magnification mask.

13. The method according to claim 9, characterized in that, The method also includes: The distance between the Y-nozzle used for hydrogen and the calibration nozzle is adjusted from 1 mm to 20 mm to adjust the flow of hydrogen.

14. A method for manufacturing a semiconductor device, characterized in that, The method includes: Provided is an extreme ultraviolet (EUV) lithography system, wherein the EUV lithography system comprises: A screen platform, configured to support a screen; A hydrogen distribution nozzle is configured to spray hydrogen gas below the shroud; A trajectory correction component, comprising: A calibration nozzle is configured to dispense at least one rectifying gas to adjust a trajectory of the hydrogen away from the shroud, thereby reducing hydrogen permeation at an edge of the shroud; as well as A gas flow detector, configured to measure a change in the flow of hydrogen gas adjusted by the at least one rectified gas; and A controller is coupled to the trajectory correction component; The controller determines whether a change in the hydrogen flow rate measured at the gas flow detector is within an acceptable range. as well as In response to a judgment that the change in the hydrogen flow measurement is not within the acceptable range, the controller adjusts several adjustable parameters of the trajectory correction component.

15. The method according to claim 14, characterized in that, The method also includes: A gas mixer is provided to mix two or more rectified gases according to a molecular weight.

16. The method according to claim 15, characterized in that, The controller is configured to control the gas mixer to change the trajectory of one or both of the hydrogen nozzle and the at least one rectified gas.

17. The method according to claim 14, characterized in that, The controller is configured to control the angle of the correction nozzle with respect to a surface of the hood platform facing the correction nozzle.

18. The method according to claim 14, characterized in that, The method also includes: The controller adjusts the pressure of one of the at least one rectified gases.

19. The method according to claim 14, characterized in that, The method also includes: Multiple exhaust nozzles are provided, configured to force the hydrogen gas away from the hood.

20. The method according to claim 14, characterized in that, The controller is configured to send a notification that includes the gas pressure of the hydrogen and the at least one rectified gas.

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